Adsorption jig and grinding equipment for semiconductor structure

Abstract

The application provides an adsorption jig for semiconductor structure and a grinding equipment. The adsorption jig for semiconductor structure comprises an adsorption top plate and an adsorption bottom plate. The adsorption top plate has opposite first and second surfaces, and is provided with a plurality of adsorption through holes arranged at intervals. From the direction of the first surface to the second surface, the adsorption through holes comprise a first hole part and a second hole part which are communicated. The size of the first hole part is smaller than that of the second hole part. The orthographic projection of the first hole part on the first surface falls within the orthographic projection of the second hole part on the first surface. The adsorption bottom plate is arranged on the side of the second surface of the adsorption top plate, and is provided with a vacuum adsorption port penetrating the adsorption bottom plate. The vacuum adsorption port is communicated with the adsorption through holes.

Description

Technical Field

[0001] This application relates to the field of semiconductor equipment technology, and in particular to an adsorption fixture and grinding equipment for semiconductor structures. Background Technology

[0002] With the rapid development of new energy vehicles, industrial frequency converters, and renewable energy systems (such as photovoltaic inverters and energy storage devices), power semiconductor devices (such as IGBTs, SiC MOSFETs, and GaN HEMTs) are evolving towards higher power density, higher switching frequency, and higher high-temperature stability. Power semiconductor devices often employ packaged structures, requiring thinning of the molded enclosure during fabrication to expose heat dissipation structures and other features. Current technologies primarily employ three methods: chemical etching, laser ablation, and mechanical polishing. However, chemical etching typically uses a photoresist mask to selectively etch the molded enclosure. While it allows for precise control of the removal area, it carries risks of etchant penetration (damaging the chip's passivation layer), long processing cycles (requiring multiple mask-etching cycles), and environmental pollution. Laser ablation typically uses femtosecond / picosecond lasers to peel away layers of the molded enclosure. While it achieves non-contact processing, the equipment is expensive, and the heat-affected zone (HAZ) can easily lead to microcracks in adjacent interconnect layers (such as copper clips and solder). Mechanical grinding removes plastic sealant using grinding wheels or belts, offering advantages such as low cost and high efficiency. Adhesion and fixation of the product are crucial during the grinding process. Utility Model Content

[0003] This application provides an adsorption fixture with a semiconductor structure, comprising:

[0004] An adsorption top plate has a first surface and a second surface opposite to each other. The adsorption top plate is provided with a plurality of adsorption through holes arranged at intervals. In the direction from the first surface toward the second surface, the adsorption through holes include a first hole portion and a second hole portion that are connected. The size of the first hole portion is smaller than the size of the second hole portion. And the orthographic projection of the first hole portion on the first surface falls within the orthographic projection of the second hole portion on the first surface.

[0005] An adsorption base plate is disposed on one side of the second surface of the adsorption top plate. The adsorption base plate is provided with a vacuum adsorption port that penetrates the adsorption base plate and is connected to the adsorption through hole.

[0006] In some embodiments, the first hole is a circular hole with a diameter of 1.5mm-3mm.

[0007] In some embodiments, the second hole is a circular hole with a diameter of 6mm-9mm.

[0008] In some embodiments, the centroids of the orthographic projections of the first hole and the second hole onto the first surface overlap.

[0009] In some embodiments, the adsorption top plate includes a first adsorption region and a second adsorption region disposed opposite each other in a first direction, and both the first adsorption region and the second adsorption region are provided with a plurality of adsorption through holes.

[0010] In some embodiments, the second surface of the adsorption top plate is provided with a recessed first vacuum channel, the first vacuum channel is located between the first adsorption region and the second adsorption region and extends along the second direction, and a portion of the first vacuum channel is opposite to the vacuum adsorption port and communicates with the vacuum adsorption port, and the second direction has a non-zero angle with the first direction.

[0011] Both the first adsorption region and the second adsorption region include a plurality of adsorption sub-regions spaced apart along the second direction. Each adsorption sub-region has a plurality of adsorption through holes, and each adsorption sub-region has a vacuum chamber recessed from the second surface and communicating with each adsorption through hole of the adsorption sub-region.

[0012] The second surface of the adsorption top plate is also provided with a plurality of recessed second vacuum channels, and the vacuum chambers of each adsorption sub-region are connected to the first vacuum channel through at least one second vacuum channel.

[0013] In some embodiments, a first limiting hole is provided between the first adsorption region and the second adsorption region, and the first limiting hole extends inward from the second surface of the adsorption top plate by a certain thickness.

[0014] The adsorption base plate has a third surface and a fourth surface opposite to each other. The adsorption base plate is provided with a second limiting hole that cooperates with the first limiting hole. The second limiting hole passes through the third surface and the fourth surface of the adsorption base plate.

[0015] The adsorption fixture also includes a first fixing member fixed in the corresponding first limiting hole and second limiting hole.

[0016] In some embodiments, the first surface of the adsorption top plate is provided with alignment holes;

[0017] The adsorption fixture also includes an alignment member adapted to the alignment hole, the alignment member being inserted into the alignment hole and protruding outward from the first surface of the adsorption top plate.

[0018] In some embodiments, the adsorption base plate has opposing third and fourth surfaces, the third surface facing the adsorption top plate, and the fourth surface having a sealing groove located around the vacuum adsorption port.

[0019] In some embodiments, the adsorption base plate has opposing third and fourth surfaces, the third surface facing the adsorption top plate, and the edge of the fourth surface is provided with a recessed operating groove.

[0020] This application also provides a grinding apparatus, which includes a rotary operating table, a grinding wheel, and an adsorption fixture with a semiconductor structure as described above;

[0021] The adsorption fixture for the semiconductor structure is fixed on the rotary operating table and can rotate with the rotary operating table. The adsorption fixture for the semiconductor structure is used to adsorb the semiconductor structure when grinding the semiconductor structure.

[0022] The grinding wheel is vertically and vertically positioned above the rotary operating table, and is used to descend to contact the semiconductor structure adsorbed on the adsorption fixture when grinding is required, so as to grind the semiconductor structure in conjunction with the rotation of the rotary operating table.

[0023] The main technical effects achieved by the embodiments of this application are:

[0024] The adsorption fixture and grinding equipment for the semiconductor structure provided in this application embodiment are configured with an adsorption top plate and an adsorption bottom plate. The adsorption through-holes on the adsorption top plate are configured with first and second holes of different sizes, and the orthographic projection of the first hole on the first surface falls within the orthographic projection of the second hole on the first surface. This allows the entire adsorption through-hole to have a larger vacuum space, which is beneficial for improving the vacuum adsorption force of each adsorption through-hole, thereby improving the adsorption force of the semiconductor structure. Furthermore, the relatively larger second hole can also accommodate some of the debris generated during the grinding of the semiconductor structure, reducing the risk of the adsorption through-hole becoming clogged. Attached Figure Description

[0025] Figure 1 This is a three-dimensional structural diagram of an adsorption fixture with a semiconductor structure provided in an exemplary embodiment of this application;

[0026] Figure 2 This is a schematic diagram from one perspective of an exemplary embodiment of this application, showing an adsorption top plate.

[0027] Figure 3 This is a schematic diagram from another perspective of an exemplary embodiment of this application, showing an adsorption top plate.

[0028] Figure 4 This is a cross-sectional view of an adsorption top plate provided in an exemplary embodiment of this application;

[0029] Figure 5 This is a schematic diagram from one perspective of an exemplary embodiment of this application, showing an adsorption base plate.

[0030] Figure 6 This is a schematic diagram from another perspective of an exemplary embodiment of this application, showing an adsorption base plate.

[0031] Figure 7 This is a cross-sectional view of an adsorption base plate provided in an exemplary embodiment of this application;

[0032] Figure 8 This is a simplified structural diagram of a grinding apparatus provided in an exemplary embodiment of this application. Detailed Implementation

[0033] Exemplary embodiments will now be described in detail, examples of which are illustrated in the accompanying drawings. When the following description relates to the drawings, unless otherwise indicated, the same numerals in different drawings denote the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with this application. Rather, they are merely examples of apparatuses and methods consistent with some aspects of this application as detailed in the appended claims.

[0034] The terminology used in this application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. The singular forms “a,” “the,” and “the” used in this application and the appended claims are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the term “and / or” as used herein refers to and includes any or all possible combinations of one or more of the associated listed items.

[0035] The following is in conjunction with the appendix Figures 1 to 8 The following describes some embodiments of this application in detail. Unless otherwise specified, the embodiments and features described below can be combined with each other.

[0036] Reference Figure 1 and combine when necessary Figures 2 to 8 As shown, an adsorption fixture 100 with a semiconductor structure is provided. The adsorption fixture 100 with a semiconductor structure includes an adsorption top plate 10 and an adsorption bottom plate 20.

[0037] The adsorption top plate 10 has a first surface S1 and a second surface S2 opposite to each other. The adsorption top plate 10 is provided with a plurality of adsorption through holes 101 arranged at intervals. In the direction from the first surface S1 toward the second surface S2, the adsorption through holes 101 include a first hole portion 1011 and a second hole portion 1012 that are connected. The size of the first hole portion 1011 is smaller than the size of the second hole portion 1012. And the orthographic projection of the first hole portion 1011 on the first surface S1 falls within the orthographic projection of the second hole portion 1012 on the first surface S1.

[0038] The adsorption base plate 20 is located on the side of the second surface S2 of the adsorption top plate 10. The adsorption base plate 20 is provided with a vacuum adsorption port 201 that penetrates the adsorption base plate 20. The vacuum adsorption port 201 is connected to the adsorption through hole 101.

[0039] The aforementioned adsorption fixture 100 for semiconductor structures is configured to have an adsorption top plate 10 and an adsorption bottom plate 20. The adsorption through-holes 101 on the adsorption top plate 10 are configured with a first hole 1011 and a second hole 1012 of different sizes. The orthographic projection of the first hole 1011 onto the first surface S1 falls within the orthographic projection of the second hole 1012 onto the first surface S1. This allows the entire adsorption through-hole 101 to have a larger vacuum space, which is beneficial for improving the vacuum adsorption force of each adsorption through-hole 101, thereby improving the adsorption force of the semiconductor structure. Furthermore, the relatively larger second hole 1012 can also accommodate some of the debris generated during the grinding of the semiconductor structure, reducing the risk of the adsorption through-hole 101 becoming clogged.

[0040] In some embodiments, the first hole 1011 is a circular hole, and the diameter of the first hole 1011 is 1.5mm-3mm. For example, 1.5mm, 2mm, 2.5mm, 3mm, etc.

[0041] In some embodiments, the second hole 1012 is a circular hole with a diameter of 6mm-9mm. For example, 6mm, 6.5mm, 7mm, 7.5mm, 8mm, 8.5mm, 9mm, etc.

[0042] In some embodiments, the centroids of the orthographic projections of the first hole 1011 and the second hole 1012 onto the first surface S1 overlap, making the adsorption through hole 101 a relatively regular through hole, and the vacuum force transmitted by the second hole 1012 to the first hole 1011 is more balanced, thus providing a more balanced adsorption force.

[0043] In some embodiments, the adsorption top plate 10 includes a first adsorption region 11 and a second adsorption region 12 disposed opposite to each other in a first direction W, and both the first adsorption region 11 and the second adsorption region 12 are provided with a plurality of adsorption through holes 101.

[0044] There is also a space 13 between the first adsorption region 11 and the second adsorption region 12. This space 13 is not provided with adsorption through holes.

[0045] In some embodiments, the second surface S2 of the adsorption top plate 10 is provided with a recessed first vacuum channel 103. The first vacuum channel 103 is located between the first adsorption region 11 and the second adsorption region 12 and extends along the second direction L. A portion of the first vacuum channel 103 is opposite to and communicates with the vacuum adsorption port 201. The second direction L and the first direction W have a non-zero angle. For example, the second direction L and the first direction W may be perpendicular to each other, or have other non-zero angles. Preferably, the second direction L and the first direction W may be perpendicular to each other.

[0046] The first vacuum channel 103 includes a first channel portion 1031 and a second channel portion 1032 communicating with the first channel portion 1031. The first channel portion 1031 is opposite to the vacuum adsorption port 201. The shapes of the first channel portion 1031 and the vacuum adsorption port 201 are adapted to each other for better connection.

[0047] Both the first adsorption region 11 and the second adsorption region 12 include a plurality of adsorption sub-regions spaced apart along the second direction L. Each adsorption sub-region has a plurality of adsorption through holes 101, and each adsorption sub-region has a vacuum chamber 106 that is recessed from the second surface S2 and communicates with each adsorption through hole 101 of the adsorption sub-region.

[0048] The second surface S2 of the adsorption top plate 10 is also provided with a plurality of recessed second vacuum channels 104, and the vacuum chambers 106 of each adsorption sub-region are all connected to the first vacuum channel 103 through at least one second vacuum channel 104.

[0049] like Figure 2 As shown, the first adsorption region 11 includes a plurality of adsorption sub-regions 111, 112, and 113 spaced apart along the second direction L. The second adsorption region 12 includes a plurality of adsorption sub-regions 121, 122, and 123 spaced apart along the second direction L. Each adsorption sub-region 111, 112, 113, 121, 122, and 123 is connected to the first vacuum channel 103 through a corresponding second vacuum channel 104.

[0050] The design of each vacuum channel is more conducive to improving the vacuum adsorption capacity of the adsorption fixture 100.

[0051] In some embodiments, a first limiting hole 1021 is provided between the first adsorption region 11 and the second adsorption region 12, and the first limiting hole 1021 extends inward from the second surface S2 of the adsorption top plate 10 by a certain thickness.

[0052] The adsorption base plate 20 has a third surface S3 and a fourth surface S4 opposite to each other. The adsorption base plate 20 is provided with a second limiting hole 2021 that cooperates with the first limiting hole 1021. The second limiting hole 2021 passes through the third surface S3 and the fourth surface S4 of the adsorption base plate 20.

[0053] The adsorption fixture 100 further includes a first fixing member (not shown) fixed in the corresponding first limiting hole 1021 and second limiting hole 2021. The first fixing member may be a pin.

[0054] The adsorption top plate 10 and the adsorption bottom plate 20 are also respectively provided with positioning holes 1022 and 2022 located around the adsorption through holes. Each positioning hole 1022 is adapted to a corresponding positioning hole 2022 and is fixed by a corresponding second fixing member. The second fixing member can also be a pin.

[0055] The provision of the first limiting hole 1021, the second limiting hole 2021, and the first fixing member, compared to the scheme where limiting holes and fixing members can only be provided around the adsorption through hole, helps to further improve the fixing force between the adsorption top plate and the adsorption bottom plate, prevents the two from deflecting relative to each other, and improves the reliability of the adsorption fixture 100.

[0056] In some embodiments, the first surface S1 of the adsorption top plate 10 is provided with alignment holes 1051.

[0057] The adsorption fixture 100 of the semiconductor structure also includes an alignment member (not shown) adapted to the alignment hole 1051. The alignment member is inserted into the alignment hole 1051 and protrudes outward from the first surface S1 of the adsorption top plate 10.

[0058] The first surface S1 of the adsorption top plate 10 may also be provided with an alignment hole 1052 located around the adsorption through hole 101. Correspondingly, the adsorption fixture 100 of the semiconductor structure also includes an alignment member (not shown) adapted to the alignment hole 1052, the alignment member being inserted into the alignment hole 1052 and protruding outward from the first surface S1 of the adsorption top plate 10.

[0059] The alignment component can be a pin, such as an M7 type pin.

[0060] Because the positioning component is detachably inserted into the positioning holes 1051 and 1052, it can be removed and replaced when the positioning component is worn or has other problems, which helps to improve the service life of the adsorption fixture.

[0061] In some embodiments, the adsorption base plate 20 has a third surface S3 and a fourth surface S4 facing each other, the third surface S3 facing the adsorption top plate 10, and the fourth surface S4 having a sealing groove 203 located around the vacuum adsorption port 201 for setting a sealing ring.

[0062] The sealing groove 203 allows the vacuum adsorption port 201 to be directly connected to an external vacuum adsorption interface. Together with the sealing ring in the sealing groove 203, it can ensure the sealing of the connection between the adsorption fixture 100 and the vacuum adsorption interface.

[0063] In some embodiments, the adsorption base plate 20 has a third surface S3 and a fourth surface S4 facing each other, the third surface S3 facing the adsorption top plate 10, and the edge of the fourth surface S4 is provided with a recessed operating groove 204.

[0064] The operating groove 204 can be a semi-circular groove or a rectangular groove.

[0065] With the groove 204 configured, after the semiconductor structure grinding is complete, the suction fixture can be lifted using tools such as pry bars to break the vacuum and remove the semiconductor structure. Compared to the conventional process of breaking the vacuum and removing the product using a grinding fixture, this significantly improves the efficiency of product removal.

[0066] This application also provides a grinding apparatus 1000, which includes a rotary operating table 200, a grinding wheel 300, and an adsorption fixture 100 with a semiconductor structure as described above.

[0067] The adsorption fixture 100 for the semiconductor structure is fixed to the rotary operating table 200 and can rotate with the rotary operating table 200. The adsorption fixture 100 for the semiconductor structure can be used to adsorb the semiconductor structure during the grinding of the semiconductor structure. The adsorption base plate 20 of the adsorption fixture 100 is fixed to the rotary operating table 200.

[0068] The grinding wheel 300 is vertically and flexibly positioned above the rotary operating table 200. When grinding of the semiconductor structure is required, it descends to contact the semiconductor structure adsorbed on the adsorption fixture, thus cooperating with the rotation of the rotary operating table 200 to grind the semiconductor structure. When grinding of the semiconductor structure is not required, the grinding wheel 300 can rise to a higher position, facilitating the handling and other operations of the semiconductor structure.

[0069] The grinding equipment 1000 may further include a support platform 400, and the rotary operating table 200 is located on the support platform 400. When using the grinding equipment 1000 for grinding, the semiconductor structure can be placed on the upper surface of the adsorption fixture 100 (that is, the first surface of the adsorption top plate), the rotary operating table 200 is started to rotate, and the grinding wheel 300 is moved downward to contact the semiconductor structure in order to grind the semiconductor structure.

[0070] Other embodiments of this application will readily occur to those skilled in the art upon consideration of the specification and practice of the disclosure herein. This application is intended to cover any variations, uses, or adaptations of this application that follow the general principles of this application and include common knowledge or customary techniques in the art not disclosed herein. The specification and examples are to be considered exemplary only, and the true scope and spirit of this application are indicated by the following claims.

[0071] It should be understood that this application is not limited to the precise structure described above and shown in the accompanying drawings, and various modifications and changes can be made without departing from its scope. The scope of this application is limited only by the appended claims.

Claims

1. An adsorption fixture with a semiconductor structure, characterized in that, include: An adsorption top plate has a first surface and a second surface opposite to each other. The adsorption top plate is provided with a plurality of adsorption through holes arranged at intervals. In the direction from the first surface toward the second surface, the adsorption through holes include a first hole portion and a second hole portion that are connected. The size of the first hole portion is smaller than the size of the second hole portion. And the orthographic projection of the first hole portion on the first surface falls within the orthographic projection of the second hole portion on the first surface. An adsorption base plate is disposed on one side of the second surface of the adsorption top plate. The adsorption base plate is provided with a vacuum adsorption port that penetrates the adsorption base plate and is connected to the adsorption through hole.

2. The adsorption fixture with a semiconductor structure as described in claim 1, characterized in that, The first hole is a circular hole with a diameter of 1.5mm-3mm.

3. The adsorption fixture with a semiconductor structure as described in claim 1, characterized in that, The second hole is a circular hole with a diameter of 6mm-9mm.

4. The adsorption fixture with a semiconductor structure as described in claim 1, characterized in that, The centroids of the orthographic projections of the first hole and the second hole onto the first surface overlap.

5. The adsorption fixture with a semiconductor structure as described in claim 1, characterized in that, The adsorption top plate includes a first adsorption region and a second adsorption region arranged opposite each other in a first direction, and both the first adsorption region and the second adsorption region are provided with a plurality of adsorption through holes.

6. The adsorption fixture as described in claim 5, characterized in that, The second surface of the adsorption top plate is provided with a recessed first vacuum channel. The first vacuum channel is located between the first adsorption region and the second adsorption region and extends along the second direction. A portion of the first vacuum channel is opposite to the vacuum adsorption port and communicates with the vacuum adsorption port. The second direction has a non-zero angle with the first direction. Both the first adsorption region and the second adsorption region include a plurality of adsorption sub-regions spaced apart along the second direction. Each adsorption sub-region has a plurality of adsorption through holes, and each adsorption sub-region has a vacuum chamber recessed from the second surface and communicating with each adsorption through hole of the adsorption sub-region. The second surface of the adsorption top plate is also provided with a plurality of recessed second vacuum channels, and the vacuum chambers of each adsorption sub-region are connected to the first vacuum channel through at least one second vacuum channel.

7. The adsorption fixture with a semiconductor structure as described in claim 5, characterized in that, A first limiting hole is provided between the first adsorption area and the second adsorption area, and the first limiting hole extends inward from the second surface of the adsorption top plate by a certain thickness; The adsorption base plate has a third surface and a fourth surface opposite to each other. The adsorption base plate is provided with a second limiting hole that cooperates with the first limiting hole. The second limiting hole passes through the third surface and the fourth surface of the adsorption base plate. The adsorption fixture also includes a first fixing member fixed in the corresponding first limiting hole and second limiting hole.

8. The adsorption fixture with a semiconductor structure as described in claim 5, characterized in that, The first surface of the adsorption top plate is provided with alignment holes; The adsorption fixture also includes an alignment member adapted to the alignment hole, the alignment member being inserted into the alignment hole and protruding outward from the first surface of the adsorption top plate.

9. The adsorption fixture with a semiconductor structure as described in claim 1, characterized in that, The adsorption base plate has a third surface and a fourth surface facing each other, the third surface facing the adsorption top plate, and the fourth surface having a sealing groove located around the vacuum adsorption port.

10. The adsorption fixture with a semiconductor structure as described in claim 1, characterized in that, The adsorption base plate has a third surface and a fourth surface facing each other, the third surface facing the adsorption top plate, and the edge of the fourth surface is provided with a recessed operating groove.

11. A grinding apparatus, characterized in that, It includes a rotary operating table, a grinding wheel, and an adsorption fixture for a semiconductor structure as described in any one of claims 1 to 10; The adsorption fixture for the semiconductor structure is fixed on the rotary operating table and can rotate with the rotary operating table. The adsorption fixture for the semiconductor structure is used to adsorb the semiconductor structure when grinding the semiconductor structure. The grinding wheel is vertically and vertically positioned above the rotary operating table, and is used to descend to contact the semiconductor structure adsorbed on the adsorption fixture when grinding is required, so as to grind the semiconductor structure in conjunction with the rotation of the rotary operating table.

Images