A MO source supply device

Abstract

This utility model discloses an MO source supply device, comprising: an MO source storage module configured to store and output MO source; an output pipeline connected to the output end of the MO source storage module and configured to deliver MO source; an MO source parameter detection module disposed on the output pipeline and configured to detect characteristic parameters of the MO source; a first control valve disposed on the output pipeline and configured to regulate the flow rate of the MO source output from the output pipeline; and a control module connected to both the MO source parameter detection module and the first control valve and configured to adjust the opening of the first control valve according to the characteristic parameters of the MO source. By adding the output pipeline, the MO source parameter detection module, and the first control valve, the molar quantity of the MO source can be controlled simply by acquiring a single characteristic parameter of the MO source through the MO source parameter detection module, resulting in fast feedback and improved control accuracy.

Description

Technical Field

[0001] This utility model relates to the field of MO source supply technology, and in particular to an MO source supply device. Background Technology

[0002] The control of the MO source (organic metal compound) is one of the core technologies of MOCVD (organic metal chemical vapor deposition) process, and its stability directly affects the uniformity of epitaxial films and device performance.

[0003] In existing technologies, the molar quantity of the final output MO source is typically kept stable by controlling multiple parameters such as pressure, temperature, and flow rate within the MO source storage module. This control method is a front-end control, where the interaction of pressure and temperature at the front end leads to numerous control parameters, slow feedback, long process adjustment times, and low control accuracy. Utility Model Content

[0004] This invention provides an MO source supply device to solve the problems of numerous control parameters, slow feedback, long process adjustment time, and low control accuracy at the front-end control end.

[0005] According to one aspect of the present invention, an MO source supply device is provided, comprising:

[0006] The MO source storage module is configured to store MO sources and output the MO sources.

[0007] An output pipeline, the input end of which is connected to the output end of the MO source storage module, is configured to deliver the MO source;

[0008] The MO source parameter detection module is located on the output pipeline and is configured to detect the characteristic parameters of the MO source.

[0009] A first control valve is disposed on the output pipeline and configured to regulate the flow rate of the MO source output from the output pipeline;

[0010] The control module is connected to the MO source parameter detection module and the first control valve, respectively, and is configured to adjust the opening of the first control valve according to the characteristic parameters of the MO source.

[0011] Optionally, the MO source parameter detection module includes a concentration detector configured to detect the concentration of the MO source.

[0012] Optionally, the MO source storage module includes: a storage tank, a carrier gas inlet pipe, and a carrier gas outlet pipe;

[0013] One end of the carrier gas inlet pipe is disposed inside the storage tank, and the other end is connected to the carrier gas. The carrier gas inlet pipe is configured to deliver the carrier gas to the storage tank.

[0014] The first end of the carrier gas outlet pipe is located in the upper part of the storage tank, the second end of the carrier gas outlet pipe is connected to the carrier gas, and the third end of the carrier gas outlet pipe is connected to the input end of the output pipeline. The carrier gas outlet pipe is configured to transmit the carrier gas carrying the MO source to the output pipeline.

[0015] Optionally, the carrier gas outlet pipe includes a first pipe body and a second pipe body;

[0016] The first end of the first pipe is located in the upper part of the storage tank, the second end of the first pipe is connected to the first end of the second pipe, and the second end of the second pipe is connected to the carrier gas;

[0017] The input end of the output pipeline is connected to the common end connecting the first pipe body and the second pipe body.

[0018] Optionally, the MO source storage module further includes:

[0019] A second control valve is disposed on the carrier gas inlet pipe and is configured to control the flow rate of carrier gas entering the storage tank from the carrier gas inlet pipe.

[0020] A third control valve, disposed on the second pipe body, is configured to control the flow rate of carrier gas from the second pipe body to the first pipe body.

[0021] Optionally, both the second control valve and the third control valve are electric valves.

[0022] Optionally, the storage tank includes a bubbler.

[0023] Optionally, the first control valve is an electric valve.

[0024] Optionally, the MO source parameter detection module is located on the side of the first control valve near the input end of the output pipeline.

[0025] The MO source supply device provided in this invention includes a MO source storage module and an output pipeline. The output pipeline stably outputs MO source to the reaction chamber, and a MO source parameter detection module is installed on the output pipeline to detect the characteristic parameters of the MO source in the output pipeline in real time. A first control valve is also installed on the output pipeline. The control module adjusts the opening of the first control valve according to the characteristic parameters of the MO source, thereby adjusting the flow rate of the MO source output from the output pipeline, ultimately achieving a stable output of the molar quantity of MO source. This invention changes the control of the MO source supply device from front-end control to back-end control. The control parameter is only the characteristic parameter, which is singular and not constrained by other factors, resulting in fast feedback and improved control accuracy.

[0026] It should be understood that the description in this section is not intended to identify key or essential features of the embodiments of this utility model, nor is it intended to limit the scope of this utility model. Other features of this utility model will become readily apparent from the following description. Attached Figure Description

[0027] To more clearly illustrate the technical solutions in the embodiments of this utility model, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0028] Figure 1 A schematic diagram of the structure of an MO source supply device provided in an embodiment of this utility model;

[0029] Figure 2 A schematic diagram of another MO source supply device provided in an embodiment of this utility model. Detailed Implementation

[0030] To enable those skilled in the art to better understand the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort should fall within the protection scope of the present invention.

[0031] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this utility model are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of the utility model described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0032] Figure 1 This is a schematic diagram of the structure of an MO source supply device provided in an embodiment of the present invention, with reference to... Figure 1 The MO source supply device includes:

[0033] MO source storage module 10 is configured to store MO sources and output MO sources;

[0034] Output pipe 11, the input end of output pipe 11 is connected to the output end of MO source storage module 10, and is configured to deliver MO source;

[0035] MO source parameter detection module 12 is installed on output pipeline 11 and is configured to detect characteristic parameters of MO source;

[0036] The first control valve 13 is disposed on the output pipeline 11 and is configured to regulate the flow rate of the MO source output by the output pipeline 11;

[0037] The control module is connected to the MO source parameter detection module 12 and the first control valve 13 respectively, and is configured to adjust the opening of the first control valve 13 according to the characteristic parameters of the MO source.

[0038] MO source, or high-purity metal-organic compound, is a supporting material for growing semiconductor microstructures using advanced techniques such as metal-organic chemical vapor deposition (MOCVD) and metal-organic molecular beam epitaxy (MOMBE). The MO source needs to be stored in a container protected by an inert gas with high requirements for cleanliness and airtightness, which is the MO source storage module 10 described in this embodiment.

[0039] After being set according to preset parameters, the MO source storage module 10 outputs MO source to the output pipeline 11. These preset parameters include temperature, pressure, and other parameters. When the MO source supply device is initially turned on, the MO source storage module 10 operates according to the default preset parameters, simultaneously outputting a certain amount of MO source to the output pipeline 11. The first control valve 13 can be an electric valve, a pneumatic valve, or a hydraulic valve, etc., and its type is not specifically limited. Optionally, the first control valve 13 is an electric valve. Driven by a motor, the electric valve can achieve high-precision flow and pressure regulation, meeting the needs of scenarios with high precision requirements. It is unaffected by fluctuations in the gas source pressure and has stable operating performance.

[0040] The MO source parameter detection module 12 includes a detector that matches the characteristic parameters of the MO source. For example, if the characteristic parameter of the MO source is flow rate, then the corresponding MO source parameter detection module 12 includes a flow detector to detect the flow rate of the MO source in the output pipeline 11 in real time. The characteristic parameter of the MO source is a single parameter. The characteristic parameter of the MO source corresponds one-to-one with the final output molar quantity of the MO source. When the molar quantity of the MO source output by the output pipeline 11 is the target molar quantity, the corresponding characteristic parameter of the MO source should remain at the target parameter value. If the characteristic parameter of the MO source is less than the target parameter value, the corresponding control module controls the opening of the first control valve 13 to increase the flow rate of the MO source output by the output pipeline 11. If the characteristic parameter of the MO source is greater than the target parameter value, the corresponding control module controls the opening of the first control valve 13 to decrease the flow rate of the MO source output by the output pipeline 11, thereby stabilizing the final output molar quantity of the MO source output by the output pipeline 11 at the target molar quantity.

[0041] The MO source supply device provided in this invention includes a MO source storage module and an output pipeline. The output pipeline stably outputs MO source to the reaction chamber, and a MO source parameter detection module is installed on the output pipeline to detect the characteristic parameters of the MO source in the output pipeline in real time. A first control valve is also installed on the output pipeline. The control module adjusts the opening of the first control valve according to the characteristic parameters of the MO source, thereby adjusting the flow rate of the MO source output from the output pipeline, ultimately achieving a stable output of the molar quantity of MO source. This invention changes the control of the MO source supply device from front-end control to back-end control. The control parameter is only the characteristic parameter, which is singular and not constrained by other factors, resulting in fast feedback and improved control accuracy.

[0042] Continue to refer to Figure 1 Optionally, the MO source parameter detection module 12 includes a concentration detector, in which case the characteristic parameter of the corresponding MO source is the concentration of the MO source, and the MO source parameter detection module 12 is configured to detect the concentration of the MO source. The control module adjusts the opening of the first control valve 13 according to the deviation between the MO source concentration output by the MO source storage module 10 and the target concentration value. The target concentration value is the concentration value corresponding to the stable output of the target molar amount to the reaction chamber of the MOCVD equipment via the output pipeline 11.

[0043] Figure 2 A schematic diagram of another MO source supply device provided in an embodiment of this utility model is shown below. Figure 2 The MO source storage module 10 includes: a storage tank 101, a carrier gas inlet pipe 102, and a carrier gas outlet pipe 103;

[0044] One end of the carrier gas inlet pipe 102 is disposed inside the storage tank 101, and the other end is connected to the carrier gas. The carrier gas inlet pipe 102 is configured to deliver carrier gas to the storage tank 101.

[0045] The first end of the carrier gas outlet pipe 103 is located at the upper part of the storage tank 101, the second end of the carrier gas outlet pipe 103 is connected to the carrier gas, and the third end of the carrier gas outlet pipe 103 is connected to the input end of the output pipe 11. The carrier gas outlet pipe 103 is configured to transmit the carrier gas carrying the MO source to the output pipe 11.

[0046] Optionally, the storage tank 101 includes a bubbler with adjustable temperature and pressure. In this embodiment, after the temperature and pressure in the bubbler are initially set to preset values, no further adjustment is made to the temperature and pressure. Instead, the stable output of the MO source is ensured by adjusting the opening of the first control valve 13. The carrier gas can be an inert gas such as high-purity nitrogen or high-purity hydrogen. The MO source in the storage tank 101 is carried by the carrier gas in the carrier gas outlet pipe 103 and then output to the output pipe 11.

[0047] Continue to refer to Figure 2 Optionally, the carrier gas outlet pipe 103 includes a first pipe body 1031 and a second pipe body 1032;

[0048] The first end of the first tube 1031 is located in the upper part of the storage tank 101, the second end of the first tube 1031 is connected to the first end of the second tube 1032, and the second end of the second tube 1032 is connected to the carrier gas.

[0049] The input end of the output pipe 11 is connected to the common end of the first pipe body 1031 and the second pipe body 1032.

[0050] The first pipe 1031 and the second pipe 1032 are connected, and their common end is connected to the output pipe 11. The carrier gas enters the first pipe 1031 through the second pipe 1032, and together with the MO source discharged through the first pipe 1031, enters the output pipe 11. The second pipe 1032 is set up to transport the carrier gas, so as to carry the MO source to the output pipe 11.

[0051] Continue to refer to Figure 2 Optionally, the MO source storage module 10 also includes:

[0052] The second control valve 104 is disposed on the carrier gas inlet pipe 102 and is configured to control the flow rate of carrier gas entering the storage tank 101 from the carrier gas inlet pipe 102.

[0053] The third control valve 105 is disposed on the second pipe body 1032 and is configured to control the flow rate of the carrier gas flowing from the second pipe body 1032 to the first pipe body 1031.

[0054] The second control valve 104 and the third control valve 105 can be initially set to a preset opening degree and then remain unchanged, so that the flow rate of the carrier gas in the carrier gas inlet pipe 102 and the flow rate of the carrier gas in the second pipe body 1032 remains constant. Optionally, both the second control valve 104 and the third control valve 105 are electric valves. Electric valves can achieve high-precision flow and pressure regulation, meet the needs of scenarios with high precision requirements, are not affected by fluctuations in gas source pressure, and have stable working performance.

[0055] Since the saturated vapor pressure of the MO source in the carrier gas is constant, its concentration in the carrier gas is also constant once it reaches its saturated vapor pressure under certain flow rate, temperature, and pressure conditions. Ideally, by controlling the flow rate, temperature, and pressure of the MO source piping system, the amount of MO source flowing into the reaction chamber per unit time can be controlled. Based on this, the control of important parameters in the MOCVD crystal growth process can be achieved. In conventional techniques, the calculation process for the molar amount of MO source output from the front-end control module (MO source storage module 10) is as follows:

[0056] According to Avogadro's law, any gases of equal volume have the same number of molecules at the same temperature and pressure; or, under the same temperature and pressure, different gases with the same number of molecules occupy the same volume.

[0057] Ideal gas law:

[0058] PV = (M / u)RT; (1)

[0059] V=(Pv / Ps)*F*t; (2)

[0060] The vapor pressure in the MO source bottle satisfies the following formula:

[0061] LogPv = BA / (Tk - Tc); (3)

[0062] Where F is the flow rate in the carrier gas inlet pipe, t is the ventilation time in the carrier gas inlet pipe, Pv is the vapor pressure of the MO source at a specified pressure, M is the gas mass of the MO source, Tk is the absolute temperature, Tc is the temperature compensation, R is the gas constant, approximately 8.314 J / (mol·K), Ps is the gas set pressure, P is the pressure, u is the molar mass of the gas, A is the slope of the vapor pressure vs. temperature curve, and B is the intercept of the vapor pressure vs. temperature curve. Tk (normal boiling point temperature) is the normal boiling point temperature of the substance at standard atmospheric pressure (101.325 kPa), that is, the temperature at which the liquid and gaseous states reach equilibrium, reflecting the evaporation characteristics of the substance at normal pressure. At Tk, the saturated vapor pressure of the substance is 101.325 kPa, at which point the liquid and gaseous states coexist. In the MOCVD process, Tk determines the volatility of the MO source at room temperature or low temperature. For example, if the temperature gradient (Tk) is low, the MO source can volatilize at room temperature, facilitating precise control of the reactant gas flow rate via a carrier gas. The weaker the intermolecular forces (e.g., weak van der Waals forces), the lower the Tk and the higher the volatility (e.g., the Tk of trimethylgallium is significantly lower than that of trimethylindium). High-purity MO sources need to maintain a stable vapor pressure near Tk to ensure controllable reaction rates. Tc (critical temperature) is the critical temperature of a substance; above this temperature, no matter the applied pressure, the gas cannot be liquefied, marking the transition from a gas-liquid two-phase coexistence to a supercritical fluid. Above Tc, the substance exists only as a supercritical fluid, possessing both gas and liquid diffusivity and solubility. In MOCVD, Tc affects the stability of the MO source under high-temperature reaction conditions. If the reaction temperature is close to or exceeds Tc, the MO source may not completely vaporize, leading to uneven deposition. The stronger the intermolecular forces (e.g., polar molecules), the higher the Tc. For example, the Tc of phosphides (e.g., TBP) is typically higher than that of nitrides (e.g., TMGa). Tc and critical pressure pc together determine the phase behavior of a substance under high temperature and high pressure, which is of guiding significance for the design of reaction chamber pressure.

[0063] The amount of MO source used, M, can be calculated from (1), (2), and (3). Therefore, to ensure a stable output of the MO source at the front control end, i.e., the MO source storage module 10, the parameters to be considered include the pressure and temperature of the storage tank 101, the flow rate of the carrier gas in the carrier gas inlet pipe 102, and the flow rate of the carrier gas in the carrier gas outlet pipe 103. These parameters also influence each other. With many parameters and slow feedback, the process adjustment time for a stable output of the MO source is long, and the cutting accuracy is low. Compared to adjusting the pressure and temperature of the storage tank 101, and the flow rate of the carrier gas in the carrier gas inlet pipe 102 and the flow rate of the carrier gas outlet pipe 103, to maintain the amount of MO source input to the reaction chamber, in this embodiment, the parameters at the front control end remain unchanged at their initial settings. Only the flow rate of the MO source input to the reaction chamber from the front control end is adjusted to regulate the molar amount of the MO source. The addition of a downstream control unit (output pipeline 11), an MO source parameter detection module 12, and a first control valve 13 enables the adjustment of the molar quantity of the MO source. The entire downstream control unit only needs to acquire the single characteristic parameter of the MO source concentration to control the molar quantity. This single parameter is not constrained by other factors, resulting in fast feedback and improved control accuracy. The scheme in this embodiment features fast output response, directly adjustable output flow rate, and rapid and stable output of the MO source, reducing the impact of the lag process in multi-parameter control on the output.

[0064] Continue to refer to Figure 2 Optionally, the MO source parameter detection module 12 is located on the side of the first control valve 13 near the input end of the output pipeline 11. After the MO source in the MO source storage module 10 is output to the output pipeline 11, it is first detected by the MO source parameter detection module 12 for characteristic parameters such as concentration, so that the control module can adjust the opening of the first control valve 13 according to the concentration of the MO source, thereby adjusting the molar amount of MO source output by the output pipeline 11.

[0065] The MO source supply device in this embodiment can be applied to an MOCVD equipment. The MOCVD equipment includes a reaction chamber, and the output end of the output pipeline of the MO source supply device is connected to the reaction chamber for stably outputting MO source to the reaction chamber.

[0066] Light-emitting diodes (LEDs) possess advantages such as high luminous intensity, high efficiency, small size, and long lifespan, and are considered one of the most promising light sources currently available. In recent years, LEDs have been widely used in daily life, including lighting, signal displays, backlights, automotive lights, and large-screen displays. Gallium nitride (GaN) crystals are the core component of LEDs. Gallium nitride is a compound of nitrogen and gallium, a direct bandgap semiconductor, and belongs to the third generation of semiconductor materials. It has broad prospects in optoelectronics, high-temperature high-power devices, and high-temperature microwave devices. In recent years, research and application of gallium nitride materials have been a hot topic and a cutting-edge area in the global semiconductor research field. Industrially, metal-organic chemical vapor deposition (MOCVD) equipment is commonly used for growth. The MO source is carried into the reaction chamber by a carrier gas such as high-purity nitrogen or high-purity hydrogen to participate in the chemical reaction.

[0067] It should be understood that the various forms of the process shown above can be used, with steps reordered, added, or deleted. For example, the steps described in this utility model can be executed in parallel, sequentially, or in different orders, as long as the desired result of the technical solution of this utility model can be achieved, and this is not limited herein.

[0068] The specific embodiments described above do not constitute a limitation on the scope of protection of this utility model. Those skilled in the art should understand that various modifications, combinations, sub-combinations, and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this utility model should be included within the scope of protection of this utility model.

Claims

1. A MO source supply device characterized by comprising: include: The MO source storage module is configured to store MO sources and output the MO sources. An output pipeline, the input end of which is connected to the output end of the MO source storage module, is configured to deliver the MO source; The MO source parameter detection module is located on the output pipeline and is configured to detect the characteristic parameters of the MO source. A first control valve is disposed on the output pipeline and configured to regulate the flow rate of the MO source output from the output pipeline; The control module is connected to the MO source parameter detection module and the first control valve, respectively, and is configured to adjust the opening of the first control valve according to the characteristic parameters of the MO source.

2. The MO source supply device according to claim 1, characterized in that, The MO source parameter detection module includes a concentration detector, which is configured to detect the concentration of the MO source.

3. The MO source supply device according to claim 1, characterized in that, The MO source storage module includes: a storage tank, a carrier gas inlet pipe, and a carrier gas outlet pipe; One end of the carrier gas inlet pipe is disposed inside the storage tank, and the other end is connected to the carrier gas. The carrier gas inlet pipe is configured to deliver the carrier gas to the storage tank. The first end of the carrier gas outlet pipe is located in the upper part of the storage tank, the second end of the carrier gas outlet pipe is connected to the carrier gas, and the third end of the carrier gas outlet pipe is connected to the input end of the output pipeline. The carrier gas outlet pipe is configured to transmit the carrier gas carrying the MO source to the output pipeline.

4. The MO source supply device according to claim 3, characterized in that, The carrier gas outlet pipe includes a first pipe body and a second pipe body; The first end of the first pipe is located in the upper part of the storage tank, the second end of the first pipe is connected to the first end of the second pipe, and the second end of the second pipe is connected to the carrier gas; The input end of the output pipeline is connected to the common end connecting the first pipe body and the second pipe body.

5. The MO source supply device according to claim 4, characterized in that, The MO source storage module also includes: A second control valve is disposed on the carrier gas inlet pipe and is configured to control the flow rate of carrier gas entering the storage tank from the carrier gas inlet pipe. A third control valve, disposed on the second pipe body, is configured to control the flow rate of carrier gas from the second pipe body to the first pipe body.

6. The MO source supply device according to claim 5, characterized in that, Both the second control valve and the third control valve are electric valves.

7. The MO source supply device according to claim 3, characterized in that, The storage tank includes a bubbler.

8. The MO source supply device according to claim 1, characterized in that, The first control valve is an electric valve.

9. The MO source supply device according to claim 1, characterized in that, The MO source parameter detection module is located on the side of the first control valve near the input end of the output pipeline.

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