Method for manufacturing heat dissipation components, method for manufacturing modules, and method for manufacturing electrical and electronic products.

Abstract

To provide a ceramic plate that can be properly connected to electronic components by soldering. [Solution] A ceramic plate having a plating film on at least a portion of the surface of a plate-shaped ceramic member. When this ceramic plate is heated from 25°C to 400°C at a heating rate of 5°C / min by a thermal desorption gas analysis method, the amount of hydrogen released per unit mass of the ceramic plate at 250°C is A. 250 This is 5.0 × 10⁻⁶ in mass spectral intensity based on ion current value. -10 It is less than or equal to A / g.

Description

Technical Field

[0001] The present invention relates to a ceramic plate, a package, a method for manufacturing a ceramic plate, a module, and an electric / electronic product. More specifically, the present invention relates to a ceramic plate provided with a plating film, a package obtained by sealing the ceramic plate with a packaging container, a method for manufacturing the ceramic plate, a module using the ceramic plate, and an electric / electronic product provided with the module.

Background Art

[0002] In electric / electronic products, a ceramic plate, specifically a ceramic plate containing a composite of a metal such as metal and silicon carbide, may be used as a heat dissipation member for discharging heat generated from electronic components.

[0003] Typically, the heat dissipation member is provided with a plating film on at least a part of the surface of a plate-shaped ceramic member. Generally, solder is used to connect an electronic component that releases heat and the heat dissipation member. Therefore, by providing the heat dissipation member with a plating film, the wettability of the solder is enhanced, and it becomes easier to connect the electronic component and the heat dissipation member.

[0004] For example, Patent Documents 1 and 2 describe plate-shaped heat dissipation members including a metal-silicon carbide composite containing aluminum or magnesium. These documents describe manufacturing a plate-shaped heat dissipation member by applying Ni plating to the surface of a metal-silicon carbide composite containing aluminum or magnesium. These documents also describe connecting the heat dissipation member and a power element by soldering.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Patent Document 2

[0006] As described above, a ceramic plate (heat dissipation member) having a plated film on at least a portion of its surface may be connected to an electronic component by soldering. In their research into improving ceramic plates (heat dissipation members), the inventors discovered that there are cases where it is not possible to properly connect ceramic plates and electronic components by soldering.

[0007] This invention was made in view of these circumstances. One of the objectives of this invention is to provide a ceramic plate that can be properly connected to electronic components by soldering. [Means for solving the problem]

[0008] The present inventors have completed the invention described below and solved the above-mentioned problems.

[0009] 1. A ceramic plate having a plating film on at least a portion of the surface of a plate-shaped ceramic member, The amount of hydrogen released per unit mass of the ceramic plate at 250°C when the ceramic plate is heated from 25°C to 400°C at a heating rate of 5°C / min, according to the thermal desorption gas analysis method. 250 However, the mass spectral intensity based on the ion current value is 5.0 × 10⁻⁶. -10 A ceramic plate with a ratio of A / g or less. 2. The ceramic plate described in 1. In the measurement by the aforementioned temperature-induced desorption gas analysis method, the amount of hydrogen released per unit mass of the ceramic plate at 300°C is A 300 In that case, A 250 / A 300 A ceramic plate in which the value of is 0.3 or less. 3. A ceramic plate as described in 1. or 2., The amount of hydrogen released per unit mass of the ceramic plate at 300°C, as measured by the aforementioned temperature-induced desorption gas analysis method, is A. 300 However, the mass spectral intensity based on the ion current value is 5.0 × 10⁻⁶. -9 A ceramic plate with a ratio of A / g or less. 4. A ceramic plate described in any one of 1. to 3., The aforementioned plating film is a ceramic plate with an electroless plating film. 5. A ceramic plate described in any one of 1. to 4., The aforementioned plating film is a ceramic plate containing at least one element selected from the group consisting of nickel and copper. 6. A ceramic plate described in any one of 1. to 5., The material of the plate-shaped ceramic member is a ceramic plate that is a metal-silicon carbide composite. 7. A ceramic plate as described in 6. The metal in the metal-silicon carbide composite is a ceramic plate comprising at least one selected from the group consisting of aluminum and magnesium. 8. A ceramic plate described in any one of items 1 to 7, In the measurement by the aforementioned temperature-induced desorption gas analysis method, the cumulative hydrogen release per unit mass of the ceramic plate is 2 × 10⁻⁶. -2 A ceramic plate with a concentration of mL / g or less. 9. A package containing a ceramic plate described in any one of items 1-8, sealed in a packaging container. 10. A method for manufacturing a ceramic plate as described in any one of 1. to 8., A method for manufacturing a ceramic plate, comprising a heating step of heating a material having a plating film on at least a portion of the surface of a plate-shaped ceramic member to 190°C or higher. 11. A method for manufacturing ceramic plates as described in 10. The aforementioned heating step is a method for manufacturing ceramic plates, which is performed for 30 minutes or more. 12. A module in which a ceramic plate described in any one of items 1-8 is connected to an electronic component by solder. 13. Electrical and electronic products equipped with the module described in 12. [Effects of the Invention]

[0010] According to the present invention, a ceramic plate that can be properly connected to electronic components by soldering is provided. [Brief explanation of the drawing]

[0011] [Figure 1] This is a diagram illustrating ceramic plates. [Figure 2] This is a diagram illustrating ceramic plates. [Figure 3] This is a diagram illustrating a method for manufacturing ceramic plates. [Modes for carrying out the invention]

[0012] Embodiments of the present invention will be described in detail below with reference to the drawings. In the drawings, similar components are denoted by the same reference numerals, and explanations are omitted where appropriate. To avoid complexity, if there are multiple identical components in the same drawing, a reference numeral may be assigned to only one of them, and not to all of them. The drawings are for illustrative purposes only. The shapes and dimensional ratios of the components shown in the drawings do not necessarily correspond to those of actual items.

[0013] In this specification, the notation "X~Y" in descriptions of numerical ranges means "X or greater and Y or less" unless otherwise specified. For example, "1~5 mass%" means "1 mass% or greater and 5 mass% or less".

[0014] In this specification, unless otherwise specified, the term "ceramics" is used to include not only ceramics in the narrow sense, but also composite materials consisting of metals and ceramics. In particular, as will be described later, the material of plate-shaped ceramic members can be a composite of metal and ceramics such as silicon carbide.

[0015] <Ceramic plate 1> Figures 1 and 2 are schematic diagrams showing the ceramic plate (ceramic plate 1) of this embodiment. Figure 1 shows the shape of the ceramic plate 1 when viewed from above with one of its main surfaces as the upper surface. Figure 2 is a cross-sectional view taken along line a-a' in Figure 1. The ceramic plate 1 has a plating film 5 on at least a portion (or all) of the surface of the plate-shaped ceramic member 3. The ceramic plate 1 may have one or more holes 7.

[0016] When viewed from above, the shape of the ceramic plate 1 is usually substantially rectangular. One or all of the four corners of the substantially rectangular ceramic plate 1 may be slightly rounded rather than right angles. Of course, the four corners may also be right angles. The ceramic plate 1 may be a plate with a substantially flat surface and no distortion, or it may be a plate with a curve. When the ceramic plate 1 is used in conjunction with other parts using fasteners such as screws, if the joint surface with the other parts is curved in a convex shape, the joint surface becomes "moderately flat" when fixed with the fasteners, thereby improving the bondability (adhesion) with the other parts. The length and width of the ceramic plate 1 shown in Figure 1 are typically around 40 mm x 90 mm to 140 mm x 250 mm. The thickness of the ceramic plate 1 shown in Figure 2 is, for example, 2 to 6 mm, preferably 3 to 5 mm. If the thickness of the ceramic plate 1 is not uniform, it is preferable that at least the thickness at the center of gravity of the ceramic plate 1 is within the above range. Alternatively, if the thickness of the ceramic plate 1 is not uniform, it is preferable that the thickness at each part other than the hole is within the above range.

[0017] When the ceramic plate 1 is heated from 25°C to 400°C at a heating rate of 5°C / min by temperature-programmed desorption gas analysis method, the hydrogen release amount A per unit mass of the ceramic plate 1 at 250°C 250 is 5.0×10 -10 A / g or less in terms of the mass spectrum intensity based on the ion current value. Here, the hydrogen release amount A 250 is the hydrogen release amount A at a temperature T = 250°C of the hydrogen gas release curve obtained by continuously measuring the amount of hydrogen released by the above heating by temperature-programmed desorption gas analysis method and plotting the vertical axis: the hydrogen release amount per unit mass of the ceramic plate 1 (mass spectrum intensity based on the ion current value) A, and the horizontal axis: temperature T.

[0018] A 250 being 5.0×10 -10 A / g or less in terms of the mass spectrum intensity based on the ion current value, the ceramic plate 1 can be manufactured by using appropriate raw materials and through an appropriate manufacturing process. The manufacturing process preferably includes a step of heating a material provided with a plating film on at least a part of the surface of the ceramic plate at 190°C or higher. Details regarding the raw materials and manufacturing process will be described later.

[0019] The reason why the ceramic plate of the present embodiment can be appropriately connected to an electronic component by soldering is explained as follows based on the process of the inventor's study. Just to be on the safe side, the following explanation includes speculation and the present invention is not limited by the following explanation.

[0020] The inventors have examined the reasons why the ceramic plate and the electronic component may not be appropriately connected by soldering from various viewpoints. Through the examination, the inventors newly found that voids may occur in the solder joining the ceramic plate and the electronic component, and this void seems to deteriorate the joining property between the ceramic plate and the electronic component. Further investigation revealed that the voids in the solder appear to be caused by hydrogen released from the plating film. Specifically, when a ceramic plate with a plating film is joined to an electronic component by reflow soldering, hydrogen gas may be released from the plating film due to the heating during reflow. The inventors have newly discovered that this hydrogen gas is incorporated into the molten solder, and as the solder solidifies, voids appear to be included in the solidified solder. Based on these new findings, the inventors set the amount of hydrogen released when a ceramic plate is heated as a design index for improving soldering adhesion between the ceramic plate and electronic components. They then designed a new ceramic plate with a small value for this index. As a result, A 250 The mass spectral intensity due to the ion current value is 5.0 × 10⁻⁶. -10 We completed ceramic plate 1 with a ratio of A / g or less. The completed ceramic plate 1 can be properly connected to electronic components by soldering.

[0021] Let's continue the explanation of ceramic plate 1.

[0022] (Plate-shaped ceramic member 3: In particular, material and manufacturing method) The material of the plate-shaped ceramic member 3 is preferably a metal-silicon carbide composite. Furthermore, the metal in the metal-silicon carbide composite preferably includes at least one selected from the group consisting of aluminum and magnesium.

[0023] A preferred method for manufacturing the plate-shaped ceramic member 3 is a high-pressure forging method in which a porous body is impregnated with metal under high pressure. More specifically, a molten metal forging method or a die-casting method can be employed. The high-pressure forging method involves loading a porous silicon carbide preform into a container that can withstand high pressure, and impregnating it with molten metal under high pressure to obtain a composite material. For the reason that it can be manufactured in large quantities stably, the molten metal forging method is particularly preferred as a method for manufacturing plate-shaped ceramic members 3. The manufacturing method using the molten metal forging method will be described below.

[0024] • Manufacturing of porous silicon carbide (SiC preform) In the manufacture of the plate-shaped ceramic member 3, first, a flat silicon carbide porous body (SiC preform) is formed. There are no particular restrictions on the manufacturing method, and it can be manufactured by known methods. For example, it can be manufactured by adding silica or alumina as a binder to silicon carbide (SiC) powder, which is the raw material, mixing, molding, and firing at 800°C or higher. For the sake of clarity, it should be noted that, as silica or alumina may be used as the raw material, the silicon carbide porous body does not have to be composed solely of silicon carbide as a chemical component; for example, it is sufficient if 50% or more of the total volume is composed of silicon carbide. There are no particular restrictions on the molding method; press molding, extrusion molding, and casting can be used. Furthermore, a shape-retaining binder can be used as needed.

[0025] The important properties of the plate-shaped ceramic member 3, which is made by impregnating a porous silicon carbide body with metal, are its thermal conductivity and coefficient of thermal expansion. A higher SiC content in the porous silicon carbide body is preferable because it results in higher thermal conductivity and a lower coefficient of thermal expansion. However, if the SiC content becomes too high, the metal may not be sufficiently impregnated. In practical terms, a SiC preform containing 40% by mass or more of coarse SiC particles with an average particle diameter of preferably 40 μm or more, and having a relative density of preferably 55% to 75%, is preferred. The strength of the silicon carbide porous body (SiC preform) is preferably 3 MPa or more in terms of bending strength to prevent cracking during handling and impregnation. The average particle diameter can be determined by calculating the average value of the diameters obtained for 1000 particles using a scanning electron microscope (e.g., JEOL Ltd.'s "JSM-T200") and an image analysis device (e.g., Japan Avionics Co., Ltd.). The relative density can be measured by the Archimedes method or the like.

[0026] For the SiC powder used as the raw material for silicon carbide porous materials (SiC preforms), it is preferable to adjust the particle size by appropriately using a combination of coarse and fine powders. This makes it easier to achieve both the strength of the silicon carbide porous material (SiC preform) and the high thermal conductivity of the final heat dissipation component. Specifically, a mixed powder is preferred, which is a mixture of (i) coarse SiC powder with an average particle size of 40 μm to 150 μm and (ii) fine SiC powder with an average particle size of 5 μm to 15 μm. Here, the ratio of (i) to (ii) in the mixed powder is preferably 40% to 80% by mass for (i) and 20% to 60% by mass for (ii).

[0027] Silicon carbide porous materials (SiC preforms) are obtained by degreasing and firing a molded body of a mixture of SiC powder and a binder. If the firing temperature is 800°C or higher, it is easy to obtain silicon carbide porous materials (SiC preforms) with a bending strength of 3 MPa or higher, regardless of the atmosphere during firing. However, in an oxidizing atmosphere, firing at temperatures exceeding 1100°C can accelerate the oxidation of SiC, potentially reducing the thermal conductivity of the metal-silicon carbide composite. Therefore, firing at temperatures below 1100°C is preferable in an oxidizing atmosphere. The firing time should be determined appropriately according to conditions such as the size of the silicon carbide porous material (SiC preform), the amount placed in the firing furnace, and the firing atmosphere.

[0028] When forming silicon carbide porous materials (SiC preforms) into a predetermined shape during molding, drying can be suppressed by drying each preform individually or by using spacers such as carbon with the same shape as the preform between them during drying. This suppresses changes in shape due to drying (e.g., changes in curvature). Similarly, by performing the same treatment as during drying during firing, it is possible to prevent changes in shape due to changes in the internal structure.

[0029] • Metal impregnation A plate-shaped ceramic member 3 can be obtained by impregnating the silicon carbide porous body (SiC preform) obtained as described above with a metal using a high-pressure forging method or the like. The metal here preferably contains aluminum or magnesium. The metal here may also be an alloy. One method for obtaining a plate-shaped ceramic member 3 by impregnating a silicon carbide porous material (SiC preform) with a metal is described below.

[0030] First, a silicon carbide porous material (SiC preform) is placed in a mold. Then, molten metal (preferably a metal containing aluminum or magnesium) is poured into the mold. Next, the molten metal is pressed. This impregnates the voids in the silicon carbide porous material (SiC preform) with metal. After cooling, a plate-shaped ceramic member 3 is obtained.

[0031] When setting the silicon carbide porous material (SiC preform) into the mold, it is preferable to preheat it. The preheating temperature is, for example, 500 to 650°C. Then, in order to prevent a drop in temperature, it is preferable to pour the molten metal as quickly as possible after setting the silicon carbide porous material (SiC preform) into the mold.

[0032] Incidentally, when impregnating a silicon carbide porous material (SiC preform) with metal to obtain a plate-shaped ceramic member 3, a surface metal layer may be provided on the surface (main surface, etc.) of the plate-shaped ceramic member 3. This makes it possible to obtain a plate-shaped ceramic member 3 having a surface metal layer (specifically, a surface metal layer containing aluminum or magnesium) on two main surfaces, etc. Of course, it is not necessary to provide a surface metal layer. As an example, a mold slightly larger than the dimensions of the SiC preform can be prepared as a mold for impregnation. The SiC preform is placed inside this mold, and molten metal is injected to create a surface metal layer. As another example, a surface metal layer can be provided by arranging one or more of the following materials, consisting of alumina or silica fibers, spherical particles, and crushed particles, in direct contact with the surface of the SiC preform, and then impregnating it with metal. In this case, the content of the material consisting of one or more of the following materials, consisting of alumina or silica fibers, spherical particles, and crushed particles, in the surface metal layer is preferably 1% by volume or more and 10% by mass or less, and more preferably 3% by volume or more and 8% by mass or less, relative to the surface metal layer. As yet another example, a surface metal layer can also be provided by placing a thin metal plate or film on the surface of the SiC preform and then impregnating it with metal, or by adding grooves or other features to the surface of the SiC preform beforehand.

[0033] The pressing pressure of the molten metal is not particularly limited as long as the metal is sufficiently impregnated, but is, for example, 30 MPa or higher.

[0034] In order to allow the metal (preferably an alloy containing aluminum or magnesium) to penetrate sufficiently into the voids of the preform, it is preferable that the melting point of the metal to be impregnated is moderately low. In this regard, for example, an aluminum alloy containing 7% to 25% by mass of silicon is preferred. Furthermore, the inclusion of 0.2% to 5% by mass of magnesium is preferable as it strengthens the bond between the silicon carbide particles and the metal portion. As for metal components other than aluminum, silicon, and magnesium in the aluminum alloy, there are no particular restrictions on their use as long as the properties do not change drastically, and for example, copper may be used.

[0035] Preferably, casting alloys such as AC4C, AC4CH, and ADC12 can also be used as aluminum alloys.

[0036] Incidentally, the plate-shaped ceramic member 3 may be annealed to remove the strain generated during impregnation. The annealing treatment can be carried out, for example, at a temperature of about 400 to 550°C for 10 minutes or more.

[0037] The plate-shaped ceramic member 3 obtained as described above may be substantially flat or may have an uncontrolled curvature. However, the uncontrolled curvature can be flattened or a desired curvature can be imparted, for example, by the heating and pressing process described below. The following describes the process of imparting a desired curvature to a plate-shaped ceramic member 3 by a heating and pressing process. If you want to flatten a plate-shaped ceramic member 3 that has an uncontrolled curvature, you can replace the press convex mold 10 and press concave mold 11 in Figure 3 with flat molds.

[0038] • Heating and pressing process In the heating and pressing process, for example, as shown in Figures 3(a), 3(b), and 3(c), the plate-shaped ceramic member 3 is sandwiched between a press convex die 10 and a press concave die 11 and heated and pressed, that is, pressed while being heated. This makes it possible to obtain a plate-shaped ceramic member 3 with the desired curvature.

[0039] The press-formed convex mold 10 and press-formed concave mold 11 are shaped so that a predetermined curvature is imparted to the plate-shaped ceramic member 3. The shape of the convex portion of the press convex mold 10 and the shape of the concave portion of the press concave mold 11 are typically almost identical. In other words, typically, when the press convex mold 10 and the press concave mold 11 are stacked without a plate-shaped ceramic member 3 in between, there is little to no gap between the press convex mold 10 and the press concave mold 11.

[0040] The material of the press convex die 10 and press concave die 11 is not particularly limited and can be any material that does not substantially deform under the temperature and pressure conditions described later. Specifically, ceramics such as carbon and boron nitride, and metallic materials such as cemented carbide and stainless steel are preferably used.

[0041] As long as a plate-shaped ceramic member 3 with the appropriate curvature (or appropriate flattening) is obtained, the heating temperature during heating press is not particularly limited. However, from the viewpoint of productivity and reducing pressure, it is preferable that the heating temperature be as high as possible without melting the metal contained in the plate-shaped ceramic member 3. Considering the melting points of aluminum, magnesium, etc., the heating temperature is preferably 450 to 550°C.

[0042] As long as a plate-shaped ceramic member 3 with the appropriate curvature (or appropriate flattening) can be obtained, the pressure during heating and pressing is not particularly limited, and the pressure can be adjusted as appropriate according to the thickness of the plate-shaped ceramic member 3, the heating temperature, etc. However, from the viewpoint of productivity and ensuring that the curvature (or flattening) is reliably imparted, the pressure is preferably 10 kPa or more, and more preferably 30 to 250 kPa. As long as a plate-shaped ceramic member 3 with the appropriate curvature (or appropriate flattening) is obtained, the heating press time is not particularly limited. However, from the viewpoint of reliably imparting curvature (or reliably flattening), for example, it is preferable that the time during which the temperature of the plate-shaped ceramic member 3 itself reaches 450°C or higher is 30 seconds or more, and more preferably 30 to 300 seconds.

[0043] Multiple heating and pressing steps may be performed to obtain the desired curvature (or flattening). For example, a heating and pressing step may be performed using a first press convex die 10 and press concave die 11, and then a second heating and pressing step may be performed using a second press convex die 10 and press concave die 11, which have a different curvature shape from the first press convex die 10 and press concave die 11.

[0044] After heating and pressing, the plate-shaped ceramic member 3 is cooled. Cooling may be, for example, rapid cooling or air cooling. Since the curvature and flatness may change depending on the cooling method, it is preferable to appropriately set the cooling conditions in order to obtain the desired curved or flat surface. In other words, in order to obtain a plate-shaped ceramic member 3 with appropriate curvature (or appropriate flattening), it is preferable to use a press convex mold 10 and a press concave mold 11 of appropriate shapes, as well as to appropriately adjust and optimize the temperature and time of the heat press, and the specific method of cooling after the heat press.

[0045] At least a portion of the plate-shaped ceramic member 3 may be subjected to mechanical processing. Mechanical processing includes cutting, grinding, polishing, and the like. For example, the curved shape of the plate-shaped ceramic member 3 can be finely adjusted by mechanical processing. Alternatively, the surface roughness of the plate-shaped ceramic member 3 can be appropriately adjusted by polishing the surface, thereby further improving its connectivity and bonding properties with other members.

[0046] (Plating film 5) The plating film 5 is usually present on the outermost surface of the ceramic plate 1. The plating film 5 contributes to improving the wettability of the solder when connecting the electronic component and the ceramic plate 1 by soldering, and may also contribute to preventing deterioration of the plate-shaped ceramic member 3 by shielding it from the outside air.

[0047] The plating film 5 may be an electrolytic plating film or an electroless plating film. From the viewpoint of reducing the amount of hydrogen released and suppressing solder voids as a result, it is preferable that part or all of the plating film 5 is an electroless plating film. Regarding the materials (such as plating solutions) for forming the plating film 5 and the procedure for forming the plating film 5, publicly known technologies can be referenced as appropriate.

[0048] The plating film 5 preferably contains at least one element selected from the group consisting of nickel and copper. It is more preferable that the plating film 5 contains nickel due to the ease of the plating process and the availability of the plating solution. Particularly preferred plating films 5 include Ni-P plating films and Ni-B plating films.

[0049] The plating film 5 may be a single layer or a laminate of two or more plating films. For example, a Ni-P plating film may be formed on the surface of the plate-shaped ceramic member 3 first, and then a Ni-B plating film may be formed. By laminating a Ni-P plating film, which can reduce internal stress, and a Ni-B plating film, which has good solderability, onto the surface of a plate-shaped ceramic member 3, a practically suitable ceramic plate 1 can be obtained.

[0050] The thickness of the plating film 5 is typically 4 to 15 μm, preferably 6 to 12 μm. A moderately thick plating film 5 makes proper soldering easier. On the other hand, if the plating film 5 is not too thick, the proportion of plate-shaped ceramic members 3 in the ceramic plate 1 increases, which may further improve the heat dissipation when the ceramic plate 1 is used as a heat dissipation member. In other words, the ratio of the plating film 5 in the ceramic plate 1, based on mass, is usually 0.2 to 2.0%, preferably 0.5 to 1.5%.

[0051] (hole 7) The holes 7 are typically through holes and are used to fasten the ceramic plate 1 to other members with bolts. Preferably, holes 7 are made in at least four corners of the ceramic plate 1. The holes 7 are preferably formed by machining the plate-shaped ceramic member 3 before applying the plating film 5. In the ceramic plate 1 shown in Figure 2, the holes 7 are formed by machining the plate-shaped ceramic member 3 before applying the plating film 5, and then the plating film 5 is applied. The diameter of the hole 7 when the ceramic plate 1 is viewed from above is, for example, 3 to 10 mm, preferably 5 to 9 mm.

[0052] (Non-penetrating hole) The ceramic plate 1 may have non-through holes such as indentations or countersunk holes, in addition to the through-holes 7. Non-through holes are used, for example, for positioning electronic components or preform solder to be connected to the surface of the ceramic plate 1. Non-through holes are preferably created by machining the plate-shaped ceramic member 3 before applying the plating film 5.

[0053] (Additional explanation regarding hydrogen release) A 250 This is 5.0 × 10⁻⁶ in mass spectral intensity based on ion current value. -10 A / g or less is acceptable. 250 Preferably 3.0 × 10 -10 It is less than or equal to A / g. 250 The smaller the void, the easier it is to reduce the number of voids that can occur in the solder, and therefore the ceramic plate and the electronic component tend to be properly connected. A 250 The lower limit of A should be as small as possible, and may even be 0. However, in reality, A 250 The lower limit is the mass spectral intensity based on the ion current value, for example, 1.0 × 10⁻⁶. -12 A / g or higher, preferably 1.0 × 10 -11 It is A / g or higher. In other words, A 250 This is the mass spectral intensity based on the ion current value, preferably 1.0 × 10⁻⁶. -12 ~5.0×10 -10 A / g, comfortable 1.0 × 10 -11 ~5.0×10 -10 It is A / g.

[0054] A 250 Another indicator is the amount of hydrogen released per unit mass of ceramic plate 1 at 300°C, measured by the temperature-controlled desorption gas analysis method, A. 300 This may be considered. A 300 Because of its small size, it is thought that the formation of voids in the solder can be suppressed even when the reflow temperature is high or the reflow time is long. Furthermore, it is thought that the ceramic plate and the electronic components can be connected more appropriately. Specifically, A 300 This is the mass spectral intensity based on the ion current value, preferably 5.0 × 10⁻⁶. -9 A / g or less, more preferably 1.0 × 10 -9It is less than or equal to A / g. 300 The lower limit of A should be as small as possible, and may even be 0. However, in reality, A 300 The lower limit is the mass spectral intensity based on the ion current value, for example, 1.0 × 10⁻⁶. -12 A / g, preferably 1.0 × 10 -11 A / g, more preferably 1.0 × 10 -10 It is A / g. That is, A 300 The usual is 1.0 × 10 -12 ~5.0×10 -9 A / g, preferably 1.0 × 10 -11 ~5.0×10 -9 A / g, comfortable 1.0 × 10 -10 ~1.0×10 -9 It is A / g.

[0055] Another indicator is A 250 / A 300 It is also preferable to design the ceramic plate 1 such that the value of is 0.3 or less. A 250 / A 300 A value of 0.3 or less means that when heated at 250°C, the amount of hydrogen released from the ceramic plate 1 is significantly less (less than 1 / 3) than when heated at 300°C. The melting point of typical solder is lower than 300°C, and the heating temperature in typical soldering processes such as reflow soldering is also often lower than 300°C. 250 / A 300 A value of 0.3 or less indicates that the amount of hydrogen released from the ceramic plate 1 at the heating temperature of a normal soldering process is sufficiently low. Another way to put it is A 300 Even if A is a relatively large value, 250 is A 300 If the value is sufficiently smaller than this, it is thought that the formation of voids in the solder during the normal soldering process will be suppressed.

[0056] A 250 Ya A 300From yet another perspective, using a temperature-controlled desorption gas analysis method, we can consider the cumulative hydrogen release per unit mass of ceramic plate 1 when heated from 25°C to 400°C at a heating rate of 5°C / min (the area between the hydrogen gas release curve and the horizontal axis in the range from 25°C to 400°C). A smaller value of this tends to allow for more appropriate soldering between the ceramic plate and electronic components. Specifically, this value is the mass spectral intensity based on the ion current, preferably 2 × 10⁻⁶. -2 mL / g or less, more preferably 1.5 × 10 -2 mL / g or less, more preferably 1.0 × 10 -2 The value should be less than or equal to mL / g. The smaller this value, the better, but in reality, the lower limit of this value is, for example, 0.1 × 10⁻⁶. -2 mL / g, specifically 0.5 × 10⁻⁶ -2 It is mL / g.

[0057] <Method for manufacturing ceramic plate 1> The ceramic plate 1 can preferably be manufactured by the following steps (1) to (3).

[0058] (1) A plate-shaped ceramic member 3 is manufactured. This process is explained in the section (plate-shaped ceramic member 3: especially material and manufacturing method) of <Ceramic Plate 1> above. Therefore, it will not be described in detail again.

[0059] (2) A plating film 5 is formed on at least a portion (or the entire surface) of the surface of the plate-shaped ceramic member 3 by applying a plating treatment to the plate-shaped ceramic member 3. In other words, a material is manufactured in which a plating film 5 is provided on at least a portion of the surface of the plate-shaped ceramic member 3. This process is explained in the section on (plating film 5) of <ceramic plate 1> above, stating that the plating film 5 can be either an electrolytic plating film or an electroless plating film. Therefore, it will not be explained in detail again.

[0060] (3) The material having a plating film 5 on at least a part of the surface of the plate-shaped ceramic member 3 described in (2) above is heated to 190°C or higher. This heating is thought to release hydrogen from the ceramic plate 1 in advance before soldering to connect the ceramic plate 1 and the electronic component, thereby suppressing the release of hydrogen from the ceramic plate 1 during the soldering process. In other words, by performing step (3), the amount of hydrogen released A 250 This allows for the manufacture of small ceramic plates.

[0061] Heating can be carried out, for example, by placing the material obtained in (2) above into a furnace using a forced-air circulation system. Of course, the equipment that can be used for heating is not limited to furnaces using a forced-air circulation system. The heating atmosphere may be an inert atmosphere. For example, using an N2 or Ar atmosphere can suppress oxidation of the surface of the plating film 5. Of course, heating may be carried out in the atmosphere rather than an inert atmosphere. Even if heating is carried out in the atmosphere, it is thought that sufficient hydrogen will be released from the ceramic plate 1. From the standpoint of releasing sufficient hydrogen from the ceramic plate 1, a higher heating temperature is preferable. However, if the heating temperature is too high, the ceramic plate 1 is more likely to be altered or damaged, or to warp unintentionally. Considering all factors, the heating temperature is preferably 190 to 300°C, and more preferably 190 to 270°C. From the viewpoint of releasing sufficient hydrogen from the ceramic plate 1, the heating time is preferably 30 minutes or more. Considering manufacturing efficiency, the heating time is preferably 30 minutes to 3 hours, more preferably 40 minutes to 2 hours, and particularly preferably 45 minutes to 2 hours.

[0062] <Package> To prevent alteration or deterioration due to contact with the outside air, it is preferable that the ceramic plate 1 be sealed in a packaging container before use to limit contact with the outside air. As packaging containers, bags made of aluminum laminate film or resin film are preferred. When sealing the ceramic plate 1 in a packaging container, it may be sealed together with a desiccant. Regarding packaging containers and packaging bodies, the matters described in Japanese Patent Publication No. 6703635 can be referenced.

[0063] <Applications of ceramic plate 1> The ceramic plate 1 is preferably used as a heat dissipation member in electrical and electronic products to dissipate heat generated from electronic components. The ceramic plate 1 can be connected to electronic components by soldering to form a module. Furthermore, electrical and electronic products can be manufactured using this module. Because the ceramic plate 1 can be properly connected to electronic components by soldering, these modules and electrical and electronic products possess high reliability.

[0064] The embodiments of the present invention have been described above, but these are merely examples, and various other configurations can be adopted. Furthermore, the present invention is not limited to the embodiments described above, and modifications, improvements, etc., within the scope that can achieve the objectives of the present invention are included in the present invention. [Examples]

[0065] Embodiments of the present invention will be described in detail based on examples and comparative examples. It should be noted that the present invention is not limited to these examples.

[0066] <Manufacturing of ceramic plates> (Preparation of silicon carbide porous material) 300g of silicon carbide powder A (manufactured by Taiheiyo Random Co., Ltd.: NG-150, average particle size: 100μm), 150g of silicon carbide powder B (manufactured by Yakushima Denko Co., Ltd.: GC-1000F, average particle size: 10μm), and 30g of silica sol (manufactured by Nissan Chemical Industries, Ltd.: Snowtex) were mixed in a stirring mixer for 30 minutes. The resulting mixture was poured into a mold measuring 178mm × 128mm × 5.5mm and press-molded at a pressure of 10MPa. This was then fired in air at a temperature of 900°C for 2 hours. In this way, a porous silicon carbide body was obtained. Just to clarify, 30 similar porous silicon carbide bodies were prepared for the following process.

[0067] A porous silicon carbide body was sandwiched between 210mm x 160mm x 0.8mm stainless steel (SUS304) plates, each coated with a release agent, and 30 of these plates were stacked. Then, 6mm thick iron plates were placed at both ends. Finally, the stacks were secured with 10mm diameter bolts and nuts to form a single block.

[0068] (Creation of aluminum-silicon carbide composites) The block described above was preheated to 600°C in an electric furnace. Then, the block was placed inside a preheated press mold with an internal cavity of 400mmφ × 300mm. Subsequently, molten aluminum alloy, heated to 800°C and containing 12% silicon, 1% magnesium, with the remainder being aluminum and unavoidable impurities, was poured into a press mold and pressurized at 100 MPa for 20 minutes. This impregnated the silicon carbide porous body with the aluminum alloy, yielding a metal mass containing an aluminum-silicon carbide composite. The resulting metal ingot was cooled to room temperature. Then, using a wet band saw, the metal ingot was cut along the side shape of the release plate. The sandwiched stainless steel plate was then removed. As described above, an aluminum-silicon carbide composite was obtained.

[0069] (Post-impregnation treatment) The outer surface of the obtained aluminum-silicon carbide composite was machined on an NC lathe to achieve dimensions of 180mm x 130mm. Subsequently, eight through holes with a diameter of 7mm and four countersunk holes with a diameter of φ10-4mm were machined into the periphery.

[0070] After the above processing, the composite material was cleaned by blast treatment with alumina abrasive particles under conditions of a pressure of 0.4 MPa and a conveying speed of 1.0 m / min. Subsequently, electroless Ni-P plating was performed on the composite, followed by Ni-B plating. This formed an 8 μm thick (Ni-P: 6 μm, Ni-B: 2 μm) plating film on the composite surface.

[0071] (Heating process (intended to release hydrogen)) The composite material with the plated film was placed in a forced-air circulation furnace (Yamato Scientific Co., Ltd., part number: DFS72) and heated in air at the temperatures shown in Table 1 for 1 hour. It was then allowed to cool to room temperature.

[0072] [Table 1]

[0073] Based on the above, ceramic plates of the examples and comparative examples were obtained.

[0074] <Measurement of hydrogen release amount by thermal desorption gas analysis method> The following procedure was performed using the following equipment: a vacuum-heated gas extraction and mass spectrometer (AGS-7000 model) from Canon Anelva, and a Canon Anelva quadrupole mass spectrometer (M201QA-TDM model). (1) The ceramic plate was cut to obtain samples of the masses shown in the table below. At this time, care was taken in the cutting method so that (mass of the plating layer in the sample) / (total mass of the sample) was approximately the same as (mass of the plating layer) / (mass of the ceramic plate) in the ceramic plate before the sample was cut. (2) The samples were stored in a desiccator until immediately before carrying out (3) below. (3) The sample was removed from the desiccator and weighed. Then the sample was loaded into the instrument. (4) After loading the sample into the apparatus, the system was evacuated for 2 hours. Then, measurement and heating were started. (5) By measuring the amount of hydrogen gas released in real time within the measurement temperature range, a plot was created with the vertical axis representing the amount of hydrogen released per unit mass of the sample (mass spectral intensity due to ion current value) and the horizontal axis representing temperature T. This yielded a hydrogen gas release curve.

[0075] The measurement conditions were as follows: Ionization energy 70 eV Voltage applied to secondary electron multiplier tube: -1150V Measurement mass range (m / z): 1-200 Measurement temperature range: Room temperature (25°C) to 400°C Heating rate: 300°C / hr (5°C / min) Initial pressure at the start of measurement: approximately 2 × 10⁻⁶ -6 Pa

[0076] Furthermore, regarding the amount of hydrogen released, the raw data measured was calibrated using the amount of hydrogen gas released from the hydrogen analysis control sample JSS GS-7a (hydrogen content: 6.0 ppm), sold by the Japan Iron and Steel Federation, which was heated from room temperature (25°C) to 1000°C at the same heating rate (300°C / hr) as the measurement sample.

[0077] From the obtained hydrogen gas emission curve, the amount of hydrogen released per unit mass of the ceramic plate (sample) at 250°C is A. 250 , and the amount of hydrogen released per unit mass of a ceramic plate (sample) at 300°C A 300 The data was read. Furthermore, the cumulative hydrogen emission amount per unit mass of the ceramic plate (sample) was determined by integrating the obtained hydrogen gas emission curve over the range from room temperature (25°C) to 400°C.

[0078] Table 2 summarizes the release amounts of various types of hydrogen. A 250 and A 300 The unit (A / g) represents the mass spectral intensity based on the ion current value.

[0079] [Table 2]

[0080] <Evaluation of solder voids> The following procedure was followed. (1) Preformed solder (dimensions: 55mm x 50mm x 0.2mm, composition: Sn 63%, Pb 37%) was placed on a ceramic plate. (2) The material was reflowed at 250°C for 30 minutes, and then allowed to cool. (3) The material was reflowed at 250°C for 30 minutes, and then allowed to cool. (4) After the completion of (2) and (3) above, the ceramic plates were X-rayed, and the presence or absence of voids and, if present, the extent of voids were evaluated from the obtained transmission images. If there were no voids or if the amount was at a level that did not pose a practical problem, it was judged as OK, and if the amount of voids was at a level that posed a practical problem, it was judged as NG. The evaluation results are shown in Table 3.

[0081] [Table 3]

[0082] As shown in the table above, by using a ceramic plate that releases less hydrogen when heated, such as in Example 1, it was possible to reduce voids in the reflowed solder. Voids are known to be one of the causes of poor connections during soldering. Therefore, by using ceramic plates that release less hydrogen when heated, it is possible to properly connect the ceramic plates and electronic components by soldering. Furthermore, the difference in manufacturing conditions between the ceramic plates of Example 1 and Comparative Example 1, specifically the difference in heating temperature during the heating process (intended to release hydrogen), suggests that by heating the ceramic plate at a relatively high temperature after the plating film formation, it is possible to manufacture a ceramic plate with a low hydrogen release rate.

[0083] <Additional Examples and Evaluation> In the heating process described above (intended to release hydrogen), ceramic plates were manufactured in the same manner as in Example 1, except that the heating temperature was changed to the temperature shown in Table 4 below (Examples 2-4). The amount of hydrogen released was then measured by the temperature-controlled desorption gas analysis method. This is summarized in Tables 4 and 5 below.

[0084] [Table 4]

[0085] [Table 5]

[0086] Even when preform solder was placed on the ceramic plates of these additional embodiments and reflow and re-reflow soldering were performed, the generation of voids was suppressed. In other words, even when using the ceramic plates of these additional embodiments, it is possible to properly connect the ceramic plates and electronic components by soldering.

[0087] This application claims priority based on Japanese Patent Application No. 2023-028700, filed on 27 February 2023, and incorporates all of its disclosures herein. [Explanation of Symbols]

[0088] 1. Ceramic plate 3. Plate-shaped ceramic members 5 Plating film 7 holes 10 Press Convex Type 11 Press concave mold

Claims

1. A heat dissipation member comprising a plate-shaped ceramic member with a plating film on at least a portion of its surface, wherein the plating film contains nickel, and the proportion of the plating film in the heat dissipation member is 0.2 to 2.0% by mass, and the amount of hydrogen released per unit mass of the heat dissipation member at 250°C when the heat dissipation member is heated from 25°C to 400°C at a heating rate of 5°C / min by thermal desorption gas analysis is A ２５０ However, the mass spectral intensity based on the ion current value was 5.0 × 10⁻⁶. －１０ A method for manufacturing a heat dissipation member that is A / g or less, A method for manufacturing a heat dissipation member, comprising a heating step of heating a material having a nickel-containing plating film on at least a portion of the surface of a plate-shaped ceramic member at 190°C to 220°C for 30 minutes or more.

2. A method for manufacturing a heat dissipation member according to claim 1, The amount of hydrogen released per unit mass of the heat dissipation member at 300°C, as measured by the aforementioned temperature-induced desorption gas analysis method, is A. ３００ In that case, A ２５０ / A ３００ A method for manufacturing a heat dissipation member in which the value of is 0.3 or less.

3. A method for manufacturing a heat dissipation member according to claim 1 or 2, The amount of hydrogen released per unit mass of the heat dissipation member at 300°C, as measured by the aforementioned temperature-induced desorption gas analysis method, is A. ３００ However, the mass spectral intensity based on the ion current value was 5.0 × 10⁻⁶. －９ A method for manufacturing a heat dissipation component with a density of A / g or less.

4. A method for manufacturing a heat dissipation member according to claim 1 or 2, A method for manufacturing a heat dissipation member, wherein the material of the plate-shaped ceramic member is a metal-silicon carbide composite.

5. A method for manufacturing a heat dissipation member according to claim 4, A method for manufacturing a heat dissipation member, wherein the metal in the metal-silicon carbide composite comprises at least one selected from the group consisting of aluminum and magnesium.

6. A method for manufacturing a heat dissipation member according to claim 1 or 2, In the measurement by the aforementioned temperature-induced desorption gas analysis method, the integrated hydrogen release amount per unit mass of the heat dissipation member is 2 × 10⁻⁶. －２ A method for manufacturing a heat dissipation component that is less than or equal to mL / g.

7. A method for manufacturing a module, comprising connecting a heat dissipation member manufactured by the method for manufacturing a heat dissipation member described in claim 1 or 2 with an electronic component using solder.

8. A method for manufacturing electrical and electronic products, comprising manufacturing an electrical or electronic product using a module manufactured by the method for manufacturing a module described in claim 7.

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