Semiconductor test box and semiconductor test device
By setting an anti-condensation protective layer and a melt collector on the outer surface of the cold source structure, the problem of condensation on the cold source structure is solved, the full transfer of cold energy and the stability of the test environment are achieved, and the reliability of semiconductor testing is improved.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- CHANGMAI SEMICONDUCTOR (CHENGDU) CO LTD
- Filing Date
- 2025-06-30
- Publication Date
- 2026-06-30
Smart Images

Figure CN224436502U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor testing technology, and in particular to a semiconductor test box and semiconductor testing device. Background Technology
[0002] Semiconductors need to be tested in low-temperature environments to determine their performance. During low-temperature testing, a cold source structure is typically placed within the test chamber to control its temperature. However, when the test chamber is in a low-temperature environment, water in the air inside the chamber condenses on the cold source structure, forming a frost or ice layer. This prevents the cooling generated by the cold source structure from being fully transferred to the test chamber, causing temperature fluctuations or increases within the chamber. This hinders the formation of the intended low-temperature environment and ultimately affects the semiconductor's test results at low temperatures. Utility Model Content
[0003] Therefore, it is necessary to provide a semiconductor test chamber that can reduce the frost layer condensed on the outer surface of the cold source structure, ensure that the cold energy of the cold source structure can be transferred to the test chamber as fully as possible, and maintain the stability of the low temperature environment of the test chamber.
[0004] A semiconductor test chamber includes a test cavity, an air duct structure, a cold source structure, and a first collection and melting device. The air duct structure is disposed in the test cavity. The cold source structure is disposed in the test cavity and is located on the air supply path of the air duct structure. The outer surface of the cold source structure is provided with an anti-condensation protective layer. The first collection and melting device is disposed at least below the cold source structure.
[0005] Understandably, by providing an anti-condensation protective layer on the outside of the cold source structure, water in the air inside the test chamber is less likely to condense on the outer surface of the cold source structure, thus delaying the formation of ice or frost layers on the cold source structure. Furthermore, due to the anti-condensation protective layer, even if frost or ice forms on its outer surface, the structure of the frost and ice is relatively loose and easily falls off from the outside of the anti-condensation protective layer. During this process, a first melting collector located below the cold source structure collects the falling frost and melts it. Therefore, the test chamber provided in this application, through the cooperation of the anti-condensation protective layer and the first melting collector, reduces the frost layer condensing on the outer surface of the cold source structure, thereby ensuring that the cold energy of the cold source structure can be transferred to the test chamber as fully as possible to maintain a stable low-temperature environment within the test chamber.
[0006] In some embodiments, the anti-condensation protective layer is a hydrophobic and ice-repellent layer.
[0007] In some embodiments, a second melting collector is provided at the bottom of the air duct structure.
[0008] In some embodiments, the bottom of the air duct structure is provided with a baffle plate, which is higher than the first collecting melter, and the baffle plate is provided with a through hole near the first collecting melter.
[0009] In some embodiments, the bottom of the air duct structure is provided with a baffle plate, the height of which is not higher than the bottom of the cold source structure.
[0010] In some embodiments, the air duct structure has an air inlet and an air outlet, the air inlet is located at the top of the test chamber, and the air outlet is arranged opposite to and spaced apart from the cold source structure along a first direction, the first direction being at an angle to the vertical direction.
[0011] In some embodiments, the cold source structure is provided with a plurality of spaced-apart flow channels for gas flow, and a third collector for melting is provided on the side of the flow channel opposite to the air outlet along a first direction.
[0012] In some embodiments, the first collecting melt includes a collecting box with an open opening, a heating element, and a drain pipe, the open opening facing the cold source structure; the heating element is disposed inside the collecting box; the drain pipe is connected to the collecting box and extends at least partially out of the bottom of the test chamber; wherein the vertical projection of the cold source structure is located within the vertical projection of the open opening of the collecting box.
[0013] In some embodiments, the first collecting melter further includes a one-way valve connected to the drain pipe.
[0014] This application also provides a semiconductor testing apparatus, including a door structure, a testing mechanism, and the aforementioned semiconductor testing chamber. The testing chamber of the semiconductor testing chamber has a material exchange window. The door structure is movably connected to the testing chamber and is used to open or block the material exchange window. The testing mechanism is disposed within the testing chamber. Attached Figure Description
[0015] To more clearly illustrate the technical solutions in the embodiments of this application or the conventional technology, the drawings used in the description of the embodiments or the conventional technology will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0016] Figure 1 This is a first schematic diagram of a semiconductor test box provided in an embodiment of this application;
[0017] Figure 2This is a second schematic diagram of a semiconductor test box provided in an embodiment of this application;
[0018] Figure 3 This is a front view of a semiconductor test chamber provided in an embodiment of this application;
[0019] Figure 4 A front view of a semiconductor test chamber provided in another embodiment of this application;
[0020] Figure 5 This is a schematic diagram of a first collecting melter in a semiconductor test chamber provided in an embodiment of this application.
[0021] Reference numerals: 110, Test chamber; 120, Air duct structure; 121, First side plate; 122, Second side plate; 123, Fan; 124, Air guide hood; 130, Cold source structure; 140a, First melting collector; 140b, Second melting collector; 140c, Third melting collector; 141, Collection box; 1411, Opening; 142, Drain pipe; 143, One-way valve; 150, Baffle plate; 160, Support frame; 1201, Air outlet; 1501, Through hole. Detailed Implementation
[0022] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific embodiments of this application are described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.
[0023] It should be noted that when a component is referred to as being "fixed to" or "attached to" another component, it can be directly on the other component or there may be an intermediate component. When a component is considered to be "connected to" another component, it can be directly connected to the other component or there may be an intermediate component present. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used in this application's specification are for illustrative purposes only and do not represent the only possible implementation.
[0024] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.
[0025] In this application, unless otherwise expressly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature and the second feature are in indirect contact through an intermediate medium. Furthermore, "above," "over," and "on top" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.
[0026] Unless otherwise defined, all technical and scientific terms used in this application have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in this application's specification is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
[0027] Please see Figure 1 and Figure 2 One embodiment of this application provides a semiconductor test chamber, including a test cavity 110, an air duct structure 120, a cold source structure 130, and a first melting collector 140a. The air duct structure 120 is disposed in the test cavity 110. The cold source structure 130 is disposed in the test cavity 110 and is located in the air supply path of the air duct structure 120. The outer surface of the cold source structure 130 is provided with an anti-condensation protective layer. The first melting collector 140a is disposed at least below the cold source structure 130.
[0028] The test chamber 110 is used for semiconductor testing and typically simulates different test temperatures according to testing requirements. In low-temperature testing, a cold source structure 130 provides cooling, and the airflow structure 120 ensures sufficient contact between the air and the cold source structure 130, creating a circulating cold airflow within the test chamber 110 to simulate a low-temperature environment. Since water in the air within the test chamber 110 easily condenses in low-temperature environments, an anti-condensation protective layer is provided on the outer surface of the cold source structure 130. This prevents water from condensing on the outer surface of the cold source structure 130, thus delaying the formation of ice or frost layers and ensuring that the cooling capacity of the cold source structure 130 can be fully released. Furthermore, even if frost or ice forms on the outer surface of the cold source structure 130, the interference of the anti-condensation protective layer makes the frost and ice structure relatively loose, allowing them to easily fall off from the outside of the protective layer, further reducing the amount of ice and frost on the outer surface of the cold source structure 130. Meanwhile, since a first collecting melter 140a is provided below the cold source structure 130, the detached frost and ice can be collected and melted into water under the melting action of the first collecting melter 140a, and then discharged from the test chamber 110.
[0029] Therefore, the test chamber 110 provided in this application reduces the frost layer condensed on the outer surface of the cold source structure 130 by cooperating with the anti-condensation protective layer and the first collection melter 140a, thereby ensuring that the cold energy of the cold source structure 130 can be transferred to the test chamber 110 as fully as possible, so as to maintain the stability of the low temperature environment of the test chamber 110.
[0030] The test chamber 110 can adopt an aluminum alloy sandwich structure to enhance thermal insulation performance, thereby ensuring that cold energy is effectively transferred in a closed environment.
[0031] In some embodiments, the anti-condensation protective layer is a hydrophobic and ice-repellent layer. That is, a hydrophobic and ice-repellent layer is used on the outer surface of the cold source structure 130 to reduce frost and ice buildup on its surface. The surface of the hydrophobic and ice-repellent layer is covered with micron- or nano-scale rough structures, and the inclination angle of these rough structures is greater than 150°, or even greater than 160°. This not only makes it difficult for water droplets to spread on the outer surface of the cold source structure 130, but also reduces the adhesion of ice, causing it to detach. In this embodiment, when gas circulates within the test chamber 110 via the air duct structure 120, the airflow blowing onto the cold source structure 130 also facilitates the easy detachment of ice.
[0032] The test chamber 110 is equipped with a support frame 160 to support the cold source structure 130 and the air duct structure 120.
[0033] Please see Figures 1 to 3 In some embodiments, a baffle plate 150 is provided at the bottom of the air duct structure 120. It can be understood that the baffle plate 150 is used to prevent the cold airflow from flowing away from the cold source structure 130, thereby ensuring that the cold source structure 130 always remains on the airflow path through the air duct structure 120, which is conducive to the full contact between the air in the test chamber 110 and the cold source structure 130, ensuring sufficient cooling.
[0034] The wind deflector 150 is positioned above the first collector-melt device 140a. In other words, the first collector-melt device 140a is located below the wind deflector 150, which reduces the impact of airflow on the frost and melted water collected in the first collector-melt device 140a, thereby reducing the water carried in the cold airflow and further reducing the frost layer adhering to the outer surface of the cold source structure 130.
[0035] In actual use, the baffle plate 150 has a through hole 1501 near the first collector and melter 140a. It can be understood that the through hole 1501 is provided on the baffle plate 150 because it is located above the first collector and melter 140a, so that the falling frost layer can fall more smoothly into the first collector and melter 140a.
[0036] Alternatively, a portion of the first collecting melter 140a may be inserted through the through hole 1501; this is merely an example.
[0037] like Figure 3 As shown, furthermore, the height of the baffle 150 is not higher than the bottom of the cold source structure 130. The height of the baffle 150 relative to the bottom of the test chamber 110 is H1, and the height of the bottom of the cold source structure 130 relative to the bottom of the test chamber 110 is H2, satisfying the condition: H2 ≥ H1. It is understandable that if the height of the baffle 150 is higher than the bottom of the cold source structure 130, the cold energy in a portion of the bottom area of the cold source structure 130 cannot fully contact the airflow, resulting in damage to the cold energy. Therefore, the height of the baffle 150 needs to be flush with the bottom of the cold source structure 130 (i.e., H2 = H1) or lower than the bottom of the cold source structure 130 (i.e., H2 > H1), so that the cold energy of the cold source structure 130 can fully contact the airflow flowing through the air duct structure 120, improving the utilization rate of the cold energy.
[0038] Please see Figures 1 to 3 Specifically, the air duct structure 120 has an air inlet connecting to the test chamber 110 and an air outlet 1201 connecting to the test chamber 110. Gas inside the test chamber 110 flows through the air inlet to the air duct structure 120, and then flows out from the air outlet 1201 back to the test chamber 110, achieving cold air circulation. The air outlet 1201 of the air duct structure 120 and the cold source structure 130 are arranged opposite to each other along a first direction and at intervals, with the first direction at an angle to the vertical direction. The air inlet of the air duct structure 120 is located at the top of the test chamber 110. The first direction is the X-axis direction, the vertical direction is the Z-axis direction, the length of the cold source structure 130 is along the Y-axis direction, the width is along the X-axis direction, and the height is along the Z-axis direction. A fan 123 is also provided at the air inlet of the air duct structure 120.
[0039] Airflow within the test chamber 110 flows into the air duct structure 120 through the air inlet, and then flows along the X-axis towards the cold source structure 130 through the air outlet 1201 of the air duct structure 120, ensuring full contact with the cold energy of the cold source structure 130. Then, under the action of the fan 123, it flows back into the air duct from the air inlet, forming a cold airflow circulation. In this process, because the air outlet 1201 of the air duct structure 120 is opposite to and spaced apart from the cold source structure 130, the cold airflow flowing out through the air outlet 1201 can directly reach the cold source structure 130, achieving efficient heat exchange. Furthermore, the flow of cold air along the X-axis within the test chamber 110 also facilitates the uniform distribution of cold air within the test chamber 110, avoiding localized accumulation or loss of cold energy. Simultaneously, the air inlet of the air duct structure 120 is located at the bottom of the test chamber 110. On the one hand, the length of the air duct structure 120 itself can be shortened, increasing the efficiency of cold air circulation; on the other hand, by making full use of the rising trend of hot air, the hot airflow in the test chamber 110 is guided smoothly into the air duct structure 120 and then blown directly to the cold source structure 130 through the air outlet 1201, which is beneficial for cooling. Therefore, this arrangement in this embodiment not only improves the circulation efficiency of cold air but also helps maintain the temperature uniformity in the test chamber 110, providing a stable and reliable environment for semiconductor testing.
[0040] Please continue reading. Figures 1 to 3 In practical use, the air duct structure 120 includes a first side plate 121 and a second side plate 122, which are arranged opposite to each other along the X-axis and spaced apart, together defining an airflow channel connecting to the test chamber 110. The air duct structure 120 also includes a fan 123, whose outlet 1201 is connected to the airflow channel and whose inlet is connected to the test chamber 110, thus forming a cold airflow circulating within the test chamber 110. The air duct structure 120 also includes a guide shroud 124 connecting the fan 123 and the airflow channel. Simultaneously, multiple layers of guide plates can be provided between the first side plate 121 and the second side plate 122 to promote the flow of cold air along a predetermined path, enhancing the mixing and turbulence of the cold airflow within the air duct structure 120, thereby improving the heat exchange efficiency between the cold airflow and the cold source structure 130.
[0041] In some embodiments, multiple air outlets 1201 are provided and arranged at intervals along the vertical direction. This allows for stratification of the cold airflow, ensuring that every point of the cold source structure 130 in the vertical direction can uniformly contact the airflow, thereby enabling a more even distribution of the cold airflow within the test chamber 110 and improving the cooling effect. Simultaneously, this arrangement effectively reduces eddies and dead zones in the cold airflow within the duct structure 120, improving the utilization rate of the cold airflow.
[0042] Please continue reading. Figures 1 to 3In some embodiments, the first side plate 121 is disposed facing the cold source structure 130, and the second side plate 122 is arranged inclined from top to bottom. The width of the second side plate 122 and the first side plate 121 gradually decreases from top to bottom along the first direction. That is, the portion of the air duct structure 120 corresponding to the airflow channel is arranged in a triangular pyramid shape. It can be understood that it is precisely because of the inclined arrangement of the second side plate 122 that it can guide the cold airflow flowing through the airflow channel, further enhancing the heat exchange efficiency. Furthermore, this arrangement causes the airflow channel to gradually narrow from top to bottom, effectively increasing the flow rate and pressure of the cold airflow, thereby improving the cooling effect. Figure 3 and Figure 4 In the image, the arrow indicates the direction of the airflow exiting through the air outlet 1201.
[0043] like Figure 2 As shown, in some embodiments, a second frost collector 140b is provided at the bottom of the air duct structure 120. The second frost collector 140b is located near the air outlet 1201 of the air duct structure 120 to collect frost carried by the cold airflow, thereby effectively preventing the accumulation of frost within the air duct structure 120, preventing air duct blockage caused by excessive frost, and ensuring continuous smooth flow of cold air. The second frost collector 140b is located below the aforementioned baffle plate 150, which has a corresponding through hole 1501.
[0044] Therefore, by utilizing the cooperation of the first collector melter 140a and the second collector melter 140b, the collection effect of the frost layer is improved, which helps to melt more condensed frost layer and discharge it outside the test chamber 110, thereby significantly reducing the water in the air inside the test chamber 110.
[0045] In some embodiments, the cold source structure 130 is provided with multiple spaced-apart flow channels for gas circulation. This increases the contact area between the cold source structure 130 and the airflow, facilitating sufficient contact between the airflow through the air duct structure 120 and the cooling capacity of the cold source structure 130, thereby improving the cooling effect. The length of each flow channel is set along the X-axis, meaning the flow direction of the flow channel is the same as the direction of the airflow exiting through the air outlet 1201.
[0046] In some specific embodiments, the cold source structure 130 employs a plate heat exchanger.
[0047] like Figure 4As shown, a third collector 140c is provided on the inner wall of the test chamber 110 on the side of the flow channel away from the air outlet 1201 along the first direction. That is, a third collector 140c is also provided on the side of the cold source structure 130 away from the air outlet 1201 along the X-axis. The third collector 140c is located on the air outlet path of the air duct structure 120, which is conducive to timely capture and collection of the frost layer carried along the airflow direction, and reduces the floating ice carrying the frost layer under the action of wind to refreeze on the cold source structure through circulation.
[0048] In other words, by utilizing the cooperation of the first collector melter 140a and the third collector melter 140c, the collection effect of the frost layer on the airflow path is further improved, which helps to melt more condensed frost layer and discharge it outside the test chamber 110, thereby significantly reducing the water in the air inside the test chamber 110.
[0049] Alternatively, the first collecting melter 140a, the second collecting melter 140b, and the third collecting melter 140c can be used simultaneously to collect frost from multiple directions, expanding the collection range. This allows the test chamber 110 to remain dry and clean during long-term operation, effectively avoiding problems such as decreased test accuracy caused by frost.
[0050] Please see Figure 1 , Figure 3 , Figure 4 and Figure 5 In some embodiments, the first collecting melter 140a includes a collecting box 141 with an opening 1411, a heating element (not shown in the figure), and a drain pipe 142. The opening 1411 faces the cold source structure 130. The heating element is disposed inside the collecting box 141, and the drain pipe 142 is connected to the collecting box 141 and extends at least partially out of the bottom of the test chamber 110. The vertical projection of the cold source structure 130 is located within the vertical projection of the opening 1411 of the collecting box 141. This arrangement ensures sufficient collection range of the first collecting melter 140a, facilitating the full collection of frost layers detached from the outer surface of the cold source structure 130. Simultaneously, the heating element effectively heats the frost layer collected in the collecting box 141, melting it into liquid and draining it from the test chamber 110 through the drain pipe 142. This reduces the water content in the air within the test chamber 110, thereby reducing the amount of frost adhering to the cold source structure 130 and improving the cooling effect. Specifically, the heating element can be a heating plate attached to the outer side of the collection box 141, a heating rod inserted into the bottom of the collection box 141, or a thermal resistor directly installed in the side wall of the collection box 141.
[0051] A one-way valve 143 can be installed at the drain pipe 142 to restrict the liquid flowing out through the collection tank 141, preventing water from outside the test chamber 110 or water from the air from flowing in. At the same time, the heating element can be installed on the inner side wall or the inner bottom wall of the collection tank 141.
[0052] In some embodiments, the structures of the first melting collector 140a, the second melting collector 140b, and the third melting collector 140c are basically the same. The collection box 141 in both the first melting collector 140a and the second melting collector 140b is a triangular pyramid shape, which facilitates the downward flow of frost and water. The difference lies in that the opening 1411 of the collection box 141 in the second melting collector 140b faces the air duct structure 120; and in the third melting collector 140c, the opening 1411 of the collection box 141 faces the cold source structure 130 along the X-axis, and at least the lower wall of the box is inclined downwards, which facilitates the downward flow of frost; of course, the upper wall can also be inclined downwards, which also has a certain guiding effect.
[0053] Please see Figure 1 and Figure 2 This application also provides a semiconductor testing apparatus, including a door structure, a testing mechanism, and the aforementioned semiconductor testing chamber. The testing chamber 110 of the semiconductor testing chamber has a material exchange window, and the door structure is movably connected to the testing chamber 110 for opening or closing the material exchange window. The testing mechanism is located within the testing chamber 110.
[0054] When the semiconductor under test is placed in the testing mechanism, the gate structure moves to block the material exchange window. Then, the cold source structure 130 and the air duct structure 120 are activated to simulate a low-temperature environment in the testing chamber 110 for low-temperature testing. The anti-condensation protective layer on the outer surface of the cold source structure 130 and the first melting collector 140a at its bottom reduce the frost layer adhering to its outer surface, facilitating sufficient cooling. After testing, the semiconductor can be allowed to return to room temperature. Then, the gate structure moves to open the material exchange window, removes the tested semiconductor, and places the next semiconductor under test into the testing chamber 110. This cycle continues until all semiconductor tests are completed.
[0055] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.
[0056] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the scope of protection of this application. Therefore, the patent protection scope of this application should be determined by the appended claims.
Claims
1. A semiconductor test chamber, characterized in that, include: Test chamber (110); A duct structure (120) is provided in the test cavity (110). A cold source structure (130) is disposed in the test chamber (110) and located on the air supply path of the air duct structure (120). The outer surface of the cold source structure (130) is provided with an anti-condensation protective layer. The first collecting melter (140a) is located at least below the cold source structure (130).
2. The semiconductor test chamber according to claim 1, characterized in that, The anti-condensation protective layer is a hydrophobic and ice-repellent layer.
3. The semiconductor test chamber according to claim 1, characterized in that, The bottom of the air duct structure (120) is provided with a second melting collector (140b).
4. The semiconductor test chamber according to claim 1 or 3, characterized in that, The bottom of the air duct structure (120) is provided with a baffle plate (150), which is higher than the first collecting melter (140a). The baffle plate (150) has a through hole (1501) near the first collecting melter (140a).
5. The semiconductor test chamber according to claim 1, characterized in that, The bottom of the air duct structure (120) is provided with a baffle plate (150), and the height of the baffle plate (150) is not higher than the bottom of the cold source structure (130).
6. The semiconductor test chamber according to claim 1, characterized in that, The air duct structure (120) has an air inlet and an air outlet (1201). The air inlet is located at the top of the test chamber (110). The air outlet (1201) and the cold source structure (130) are arranged opposite to each other along a first direction and at intervals. The first direction is set at an angle to the vertical direction.
7. The semiconductor test chamber according to claim 6, characterized in that, The cold source structure (130) is provided with a plurality of spaced-apart flow channels for gas flow, and a third collector (140c) is provided on the side of the flow channel away from the air outlet (1201) along the first direction.
8. The semiconductor test chamber according to claim 1, characterized in that, The first collecting melter (140a) includes: A collection box (141) with an opening (1411) facing the bottom of the cold source structure (130); A heating element is disposed within the collection box (141); and A drain pipe (142) is connected to the collection box (141); The projection of the cold source structure (130) along the vertical direction is located within the projection of the opening (1411) of the collection box (141) along the vertical direction.
9. The semiconductor test chamber according to claim 8, characterized in that, The first collecting melter (140a) also includes a one-way valve (143) connected to the drain pipe (142).
10. A semiconductor testing apparatus, characterized in that, include: The semiconductor test chamber according to any one of claims 1 to 9, wherein the test chamber (110) of the semiconductor test chamber has a material exchange window; A door structure, movably connected to the test chamber (110), is used to open or close the material exchange window; and The testing mechanism is located inside the testing cavity (110).