Heat dissipation device and electronic device

Abstract

This disclosure relates to a heat dissipation device and an electronic device. The heat dissipation device includes a throttling element and multiple heat dissipation microchannels disposed in a semiconductor device. It can adjust the flow rate of the heat exchange medium in the heat dissipation microchannels by controlling the opening degree of the throttling element according to the operating scenario of the semiconductor device, thereby controlling the temperature of the semiconductor device in different operating scenarios. For example, a larger flow rate can be used for heat dissipation in hot areas and a relatively smaller flow rate can be used for heat dissipation in non-hot areas, ensuring effective heat dissipation of the semiconductor device in different operating scenarios and improving temperature uniformity.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor technology, and more specifically, to a heat dissipation device and an electronic device. Background Technology

[0002] Semiconductor devices, such as chips, have uneven overall power density distribution and very large local power differences, which leads to severely uneven temperature distribution of the chip under different scenarios, resulting in local heat accumulation and hot spots.

[0003] In related technologies, multiple uniform microchannels are arranged on the chip to improve its heat dissipation. However, in actual operation, the temperature distribution of the chip is often very uneven, with local hot spots appearing. Moreover, this temperature distribution is determined by the operating environment, and different environments will have different temperature distributions. Therefore, conventional microchannels are difficult to dissipate heat effectively and cannot achieve overall chip temperature uniformity. Utility Model Content

[0004] The purpose of this disclosure is to provide a heat dissipation device and electronic device for at least partially solving the related technical problems.

[0005] To achieve the above objectives, according to a first aspect of this disclosure, a heat dissipation device is provided for heat dissipation of a semiconductor device, the heat dissipation device comprising a plurality of heat dissipation microchannels disposed in the semiconductor device;

[0006] The heat dissipation device also includes a throttling element, which is connected to the heat dissipation microchannel. The throttling element is configured to control its opening degree according to the operating scenario of the semiconductor device, so as to adjust the flow rate of the heat exchange medium in the heat dissipation microchannel.

[0007] In some possible embodiments, the heat dissipation device further includes a cooling pipe connected to the heat dissipation microchannel, and the throttling element is connected to the cooling pipe for adjusting the flow rate in the cooling pipe and the corresponding heat dissipation microchannel.

[0008] In some possible embodiments, one of the cooling conduits is connected to one of the heat dissipation microchannels.

[0009] In some possible embodiments, one of the cooling conduits is connected to a plurality of the heat dissipation microchannels.

[0010] In some possible embodiments, different operating scenarios of the semiconductor device create different hotspot regions;

[0011] One or more of the heat dissipation microchannels correspond to at least one of the hotspot areas;

[0012] One of the heat dissipation microchannels is connected to one of the throttling elements.

[0013] In some possible embodiments, different operating scenarios of the semiconductor device create different hotspot regions;

[0014] One or more of the heat dissipation microchannels correspond to at least one of the hotspot areas;

[0015] The multiple heat dissipation microchannels are connected to one or more of the throttling elements.

[0016] In some possible embodiments, the throttling element is located at the inlet end of the heat dissipation microchannel and / or the outlet end of the heat dissipation microchannel.

[0017] In some possible embodiments, the heat dissipation device further includes a circulation loop, one end of which is connected to one end of the heat dissipation microchannel via the throttling element, and the other end of which is connected to the other end of the heat dissipation microchannel.

[0018] The circulation loop is equipped with a heat exchange medium storage tank and a circulation pump.

[0019] In some possible embodiments, the heat dissipation device further includes a controller that is communicatively connected to both the semiconductor device and the throttling element.

[0020] According to a second aspect of this disclosure, an electronic device is also provided, including the aforementioned heat dissipation device.

[0021] The heat dissipation device disclosed herein includes a throttling element and multiple heat dissipation microchannels disposed in the semiconductor device. It can adjust the flow rate of the heat exchange medium in the heat dissipation microchannels by controlling the opening degree of the throttling element according to the operating scenario of the semiconductor device, thereby controlling the temperature of the semiconductor device in different operating scenarios. For example, a larger flow rate can be used for heat dissipation in hot areas and a relatively smaller flow rate can be used for heat dissipation in non-hot areas, ensuring effective heat dissipation of the semiconductor device in different operating scenarios and improving temperature uniformity.

[0022] Other features and advantages of this disclosure will be described in detail in the following detailed description section. Attached Figure Description

[0023] The accompanying drawings are provided to further illustrate the present disclosure and form part of the specification. They are used together with the following detailed description to explain the present disclosure, but do not constitute a limitation thereof. In the drawings:

[0024] Figure 1 These are schematic diagrams of the structure of semiconductor devices provided in some embodiments of this disclosure;

[0025] Figure 2 This is a partial structural schematic diagram of a heat dissipation device provided in some embodiments of this disclosure;

[0026] Figure 3 This is a schematic diagram of the structure of a heat dissipation device provided in some embodiments of this disclosure;

[0027] Figure 4 This is a schematic diagram of the throttling device control for hot and non-hot areas in a certain operating scenario provided by some embodiments of the heat dissipation device disclosed herein;

[0028] Figure 5 This is a schematic diagram of the structure of a heat dissipation device provided in some other embodiments of this disclosure;

[0029] Figure 6 This is a schematic diagram of the throttling device control for hot and non-hot areas in a certain operating scenario provided by some other embodiments of the heat dissipation device disclosed herein;

[0030] Figure 7 This is a flowchart of a heat dissipation method provided in some embodiments of this disclosure;

[0031] Figure 8 This is a temperature distribution diagram of a semiconductor device provided in some embodiments of this disclosure under a certain operating scenario.

[0032] Explanation of reference numerals in the attached figures

[0033] 100 - Semiconductor device; 101 - Heat dissipation microchannel; 102 - Hot spot area; 103 - Non-hot spot area; 110 - Chip; 120 - Substrate;

[0034] 210 - Cooling piping; 220 - Circulation loop; 230 - Circulation pump; 240 - Heat exchange medium storage tank; 250 - Filter; 260 - On / off valve; 270 - Relief valve;

[0035] 300 - Throttling component;

[0036] 400-Controller. Detailed Implementation

[0037] The specific embodiments of this disclosure will be described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are for illustration and explanation only and are not intended to limit this disclosure.

[0038] In this disclosure, unless otherwise stated, directional terms such as "upper," "lower," "left," and "right" generally refer to upper, lower, left, and right relative to the figures; "inner" and "outer" refer to the inside and outside of the outline of the corresponding component; and "far" and "near" refer to the corresponding structure or component being away from or near another structure or component. Furthermore, the terms "first," "second," etc., used in this disclosure are for distinguishing one element from another and do not have sequential or importance implications. In addition, in the following description, when referring to the figures, unless otherwise explained, the same reference numerals in different figures denote the same or similar elements. The above definitions are for explanation and illustration only and should not be construed as limiting this disclosure.

[0039] In related technologies, to improve chip heat dissipation, multiple uniform microchannels are arranged on the chip, with the heat exchange medium flowing in from one end and out from the other, thereby cooling the chip. However, in actual operation, the temperature distribution of a chip is often very uneven, with localized hot spots appearing. Moreover, this temperature distribution is determined by the operating environment; different active components operate differently in different environments, resulting in different temperature distributions. Therefore, conventional microchannels are insufficient for adequate heat dissipation and cannot achieve uniform overall chip temperature.

[0040] The purpose of this disclosure is to provide a heat dissipation device and electronic device for at least partially solving the related technical problems.

[0041] To achieve the above objectives, such as Figures 1 to 8 As shown, according to a first aspect of this disclosure, a heat dissipation device is provided for heat dissipation of a semiconductor device 100. The heat dissipation device includes a plurality of heat dissipation microchannels 101 disposed on the semiconductor device 100. The heat dissipation device also includes a throttling element 300, which is connected to the heat dissipation microchannels 101. The throttling element 300 is configured to control the opening degree of the throttling element 300 according to the operating scenario of the semiconductor device 100, so as to adjust the flow rate of the heat exchange medium in the heat dissipation microchannels 101.

[0042] The heat dissipation device disclosed herein includes a throttling element 300 and multiple heat dissipation microchannels 101 disposed on the semiconductor device 100. It can adjust the flow rate of the heat exchange medium in the heat dissipation microchannels 101 by controlling the opening degree of the throttling element 300 according to the operating scenario of the semiconductor device 100, thereby controlling the temperature of the semiconductor device 100 in different operating scenarios. For example, a larger flow rate can be used for heat dissipation in the hot spot area 102, while a relatively smaller flow rate can be used for heat dissipation in the non-hot spot area 103, ensuring effective heat dissipation of the semiconductor device 100 in different operating scenarios and improving temperature uniformity.

[0043] like Figure 1As shown, the semiconductor device 100 can be any suitable device. For example, the semiconductor device 100 may include a substrate 120 and a chip 110 disposed on the substrate 120. The heat dissipation microchannel 101 is arranged at a position on the chip 110 away from the substrate 120, and the hot spot region 102 may be on the side closer to the substrate 120. By introducing a heat exchange medium, such as water or other heat exchange working fluid, into the heat dissipation microchannel 101, heat is exchanged away above the corresponding hot spot region 102, thereby achieving cooling.

[0044] It should be noted that the throttling element 300 can be constructed using any suitable structure. For example, it can be a throttling valve, which can have an opening adjustment function and can also adjust its opening or closing. This throttling valve can be a manually adjustable throttling valve or an electrically adjustable throttling valve. An electrically adjustable throttling valve is preferred, facilitating automatic control of the entire device.

[0045] It is worth noting that the throttling device 300 can be set at any suitable location in the heat dissipation microchannel 101, for example, it can be set at the inlet end, outlet end, or inside the heat dissipation microchannel 101. Of course, the throttling device 300 can also be arranged on the cooling pipe 210 connected to the heat dissipation microchannel 101, which can also achieve the control of the flow rate of the heat exchange medium inside the heat dissipation microchannel 101 (including the flow rate of the heat exchange medium and / or the on / off state of the heat dissipation microchannel 101).

[0046] In some embodiments, the heat dissipation device further includes a cooling pipe 210. The cooling pipe 210 is connected to the heat dissipation microchannel 101. This connection design ensures that the heat exchange medium can flow from the cooling pipe 210 into the heat dissipation microchannel 101. Furthermore, a throttling element 300 can be connected to the cooling pipe 210. Its key function is to regulate the flow rate within the cooling pipe 210 and its corresponding heat dissipation microchannel 101. By rationally regulating the flow rate through the throttling element 300, the distribution of the heat exchange medium within the heat dissipation device can be more scientific, avoiding heat dissipation dead zones or localized overheating caused by uneven flow. This significantly improves the performance and reliability of the entire heat dissipation device, ensuring that the object being cooled operates in a stable and suitable temperature environment, extending its service life and improving its working efficiency. The cooling pipe 210 provides more possibilities for the installation of the throttling element 300, making its installation more convenient.

[0047] The connection method between the cooling pipe 210 and the heat dissipation microchannel 101 can be any suitable method. Optionally, one cooling pipe 210 can be connected to one heat dissipation microchannel 101; or, one cooling pipe 210 can be connected to multiple heat dissipation microchannels 101. For example, there can be multiple cooling pipes 210, and they correspond one-to-one with the number of heat dissipation microchannels 101, that is, each cooling pipe 210 is connected to one heat dissipation microchannel 101. Of course, one cooling pipe 210 can also be connected to two or more heat dissipation microchannels 101. By setting a throttling device 300 on the cooling pipe 210, one throttling device can control the flow rate of the heat exchange medium in multiple heat dissipation microchannels 101. It should be noted that "multiple" refers to two or more.

[0048] In some possible embodiments, the heat dissipation device may include multiple cooling pipes 210 connected one-to-one with the heat dissipation microchannels 101, and a throttling element 300 connected to at least one cooling pipe 210 for regulating the flow rate within the at least one cooling pipe 210 and its corresponding heat dissipation microchannel 101. It should be noted that, to more accurately control the flow rate of the heat dissipation microchannel 101, a corresponding flow meter can also be installed on the cooling pipe 210 to detect the flow rate data of the heat exchange medium in real time.

[0049] like Figure 2 , Figure 3 and Figure 4As shown, in some embodiments, the heat dissipation device includes multiple cooling pipes 210, the number of which corresponds one-to-one with multiple heat dissipation channels, and each cooling pipe 210 is connected to a corresponding heat dissipation microchannel 101. A throttling element 300 is connected to each cooling pipe 210 and is used to adjust the flow rate within that cooling pipe 210 and its corresponding heat dissipation microchannel 101. The amount of heat exchange medium allowed to pass through the throttling element 300 is adjusted by controlling its opening size; that is, the flow rate and the on / off state of the throttling element 300 are adjusted. By adjusting the flow rate within the cooling pipes 210 and heat dissipation microchannels 101 through the throttling element 300, precise control of the heat dissipation capacity of each heat dissipation microchannel 101 can be achieved. When increased heat dissipation efficiency is required, the flow rate can be increased; when heat dissipation demand decreases, the flow rate can be decreased, thereby effectively saving energy. Meanwhile, when some heat dissipation microchannels 101 (e.g., corresponding to hotspot areas 102 in a certain operating scenario) require significant heat dissipation, while other heat dissipation microchannels 101 (e.g., corresponding to non-hotspot areas 103 in a certain operating scenario) do not require much heat dissipation, the opening of the throttling device 300 corresponding to the heat dissipation microchannel 101 in the hotspot area 102 can be increased, and the opening of the throttling device 300 corresponding to the heat dissipation microchannel 101 in the non-hotspot area 103 can be decreased. This allows the entire heat dissipation device to more effectively dissipate heat from the semiconductor device 100, improving overall temperature uniformity. Through these settings, the flexibility and adaptability of the heat dissipation device are improved, enabling it to better meet the heat dissipation needs of different operating scenarios.

[0050] like Figure 5 and Figure 6 As shown, in some embodiments, the heat dissipation device includes multiple cooling pipes 210, the number of which corresponds one-to-one with multiple heat dissipation channels, and each cooling pipe 210 is connected to a heat dissipation microchannel 101. A throttling element 300 is connected to at least two cooling pipes 210 to regulate the flow rate within the at least two cooling pipes 210 and their corresponding heat dissipation microchannels 101. With the above arrangement, the flow rate of the heat exchange medium within the entire heat dissipation microchannel 101 can be controlled using a relatively small throttling element 300.

[0051] It should be noted that the above-mentioned scheme of one throttling device 300 corresponding to multiple cooling pipes 210 and multiple heat dissipation microchannels 101 is applicable to the case where a certain hot spot area 102 in the semiconductor device 100 corresponds to multiple heat dissipation microchannels 101 at the same time. By simultaneously controlling these multiple heat dissipation microchannels 101 corresponding to a certain hot spot area 102, on the one hand, the number of components can be reduced, and on the other hand, the flow rate in multiple heat dissipation microchannels 101 can be controlled by one throttling device 300, simplifying the control process and saving computing power.

[0052] In other embodiments, a cooling pipe 210 can be connected to two or more heat dissipation microchannels 101 simultaneously. The two or more heat dissipation microchannels 101 can be controlled by the throttling device 300 on the cooling pipe 210. By controlling the throttling device 300, the flow rate of the heat dissipation microchannel 101 corresponding to the higher temperature area can be adjusted to be larger to improve the heat exchange capacity; the flow rate of the heat dissipation microchannel 101 corresponding to the lower temperature area can be adjusted to be smaller, so that the heat dissipation purpose can be achieved with a smaller heat exchange capacity, saving energy consumption and also contributing to the uniformity of temperature in multiple areas.

[0053] like Figure 4 and Figure 6 As shown, in some possible embodiments, different operating scenarios of the semiconductor device 100 form different hotspot regions 102; one or more heat dissipation microchannels 101 correspond to at least one hotspot region 102; one heat dissipation microchannel 101 is connected to a throttling device 300; or, multiple heat dissipation microchannels 101 are connected to one or more throttling devices 300. The hotspot region 102 may be provided with one or more heat dissipation microchannels 101, which needs to be designed according to the area of ​​the hotspot region 102. For example, when the area of ​​the hotspot region 102 is relatively small, one, two, or three heat dissipation microchannels 101 can be provided; when its area is larger, more heat dissipation microchannels 101 can be provided. Furthermore, the flow rate of multiple heat dissipation microchannels 101 corresponding to a hotspot region 102 can be controlled by one or more throttling devices 300. For example, each heat dissipation microchannel 101 can be configured with a cooling pipe 210, and a throttling device 300 can be provided on each cooling pipe 210 to achieve flow control. Of course, a cooling pipe 210 can also be connected to multiple heat dissipation microchannels 101, and a throttling device 300 can be installed on the cooling pipe 210 to control the flow rate of multiple heat dissipation microchannels 101.

[0054] By adjusting the opening of the throttling device 300 for different operating scenarios, the heat dissipation efficiency can be effectively improved, ensuring that the temperature of each hot spot area 102 of the semiconductor device 100 can be controlled in a timely and effective manner under different operating scenarios.

[0055] During the operation of the semiconductor device 100, due to the diversity and complexity of its working states, different hotspot regions 102 will be generated under different operating scenarios. For example, in high-frequency computing scenarios, the core area of ​​the processor may become a hotspot region 102; while in high-power output scenarios, a hotspot region 102 may be formed near the power amplifier, etc.

[0056] To address this issue, the heat dissipation device of this disclosure includes at least one throttling element 300 configured to control one of a plurality of heat dissipation microchannels 101. These heat dissipation microchannels 101 have a precise correspondence with hot spot regions 102; that is, the heat dissipation microchannel 101 controlled by at least one throttling element 300 corresponds to at least one hot spot region 102. In other words, the heat dissipation microchannel 101 corresponding to a hot spot region 102 is controlled by at least one throttling element 300. For example, there may be multiple heat dissipation microchannels 101 corresponding to the hot spot region 102, and the flow of these multiple heat dissipation microchannels 101 can be controlled by a single throttling element 300. Alternatively, each heat dissipation microchannel 101 can also be controlled by a single throttling element 300.

[0057] By controlling the heat dissipation microchannel 101 of the hot spot region 102 through at least one throttling device 300, parameters such as the flow rate and velocity of the heat exchange medium within the heat dissipation microchannel 101 can be precisely adjusted. When the hot spot region 102 generates a large amount of heat, the throttling device 300 can increase the flow area of ​​the corresponding heat dissipation microchannel 101 or adjust the flow velocity of the heat exchange medium, allowing more heat exchange medium to flow through the heat dissipation microchannel 101 near the hot spot region 102, thereby efficiently removing the heat from the hot spot region 102. Conversely, when the hot spot region 102 generates less heat, the throttling device 300 can appropriately reduce the flow area of ​​the heat dissipation microchannel 101 or decrease the flow velocity of the heat exchange medium to avoid excessive heat dissipation and energy waste.

[0058] This design enables precise heat dissipation control of the hot spots 102 in the semiconductor device 100. On one hand, it effectively improves heat dissipation efficiency, ensuring timely and effective temperature control of the hot spots 102 in different operating scenarios, preventing performance degradation, shortened lifespan, or even damage due to localized overheating, thus significantly enhancing the reliability and stability of the semiconductor device 100. On the other hand, by rationally regulating the operating state of the heat dissipation microchannels 101, unnecessary energy consumption is avoided, improving the energy efficiency of the entire heat dissipation system and reducing the operating cost of the semiconductor device 100. This has a significant positive effect on the long-term stable operation of the semiconductor device 100 and its performance in various complex application environments.

[0059] In some possible embodiments, the throttling element 300 may be located at the inlet and / or outlet of the heat dissipation microchannel 101. For example... Figure 3 As shown, the throttling device 300 is located at the inlet end of the heat dissipation microchannel 101. For example, the throttling device 300 can be located at the inlet end of the heat dissipation microchannel 101 or on the cooling pipe 210 that corresponds to and is connected to the inlet end. The flow rate of the heat exchange medium can be adjusted or turned on / off by controlling the opening degree of the throttling device 300.

[0060] It should be noted that the throttling element 300 can also be arranged downstream of the heat dissipation microchannel 101. For example, it can be set at the outlet end of the heat dissipation microchannel 101 or on a pipe that corresponds to and is connected to the outlet end. This can also achieve the flow control function of the heat exchange medium in the heat dissipation microchannel 101.

[0061] In some possible embodiments, the heat dissipation device further includes a circulation loop 220, one end of which is connected to one end of the heat dissipation microchannel 101 via a throttling element 300, and the other end of which is connected to the other end of the heat dissipation microchannel 101; the circulation loop 220 is provided with a heat exchange medium storage tank 240 and a circulation pump 230. Figure 3 and Figure 5 As shown, the heat dissipation device further includes a circulation loop 220. The circulation loop 220 is ingeniously designed and functionally critical. One end of it can be connected to one end (e.g., the inlet end) of the heat dissipation microchannel 101 through a throttling element 300, and the other end is connected to the other end (e.g., the outlet end) of the heat dissipation microchannel 101, thereby forming a complete circulation path and realizing the recycling of the heat exchange medium.

[0062] The circulation loop 220 is also equipped with a heat exchange medium storage tank 240 and a circulation pump 230. The heat exchange medium storage tank 240 can store sufficient heat exchange medium in the system and also receive heat exchange medium flowing out from the outlet end of the heat dissipation microchannel 101, providing a stable medium supply for the entire heat dissipation process. The circulation pump 230 acts as a power source, continuously driving the heat exchange medium to flow in the circulation loop 220 and the heat dissipation microchannel 101, ensuring the efficient operation of the heat dissipation process.

[0063] First, through the interconnected design of the circulation loop 220 and the action of the circulation pump 230, the heat exchange medium can continuously circulate within the system, allowing heat to be continuously carried away from the heat source and transferred to the heat dissipation microchannel 101 for dissipation. This greatly improves heat dissipation efficiency and effectively prevents performance degradation or damage to the equipment due to overheating. Second, the introduction of the throttling element 300 regulates the flow rate and pressure of the heat exchange medium during its flow, ensuring that the heat exchange medium passes through the heat dissipation microchannel 101 at an appropriate speed and pressure. This further optimizes the heat dissipation effect and also helps maintain the stable operation of the entire system, improving the reliability and service life of the heat dissipation device.

[0064] It should be noted that, in order to better control the entire circulation process, the circulation loop 220 can also be equipped with related components such as a filter 250, a cooler, and a switching valve 260. The filter 250 can be installed between the outlet of the heat dissipation microchannel 101 and the heat exchange medium storage tank 240, and / or between the heat exchange medium storage tank 240 and the circulation pump 230, to achieve a filtering effect and prevent impurities from entering the storage tank and the circulation pump 230 during the circulation process. The cooler can be installed between the outlet of the heat dissipation microchannel 101 and the heat exchange medium storage tank 240 to cool the heat exchange medium after heat exchange. The switching valve 260 can be installed between the throttling element 300 and the circulation pump 230 for controlling the on / off state of the entire circulation loop 220. Similarly, to ensure that the circulation pump 230 can output the heat exchange medium at a relatively fixed pressure, an overflow valve 270 can be installed between the outlet of the circulation pump 230 and the heat exchange medium storage tank 240.

[0065] like Figure 3 and Figure 5 As shown, in some possible embodiments, the heat dissipation device may further include a controller 400, which is communicatively connected to the semiconductor device 100 and the throttling device 300. The heat dissipation device also includes a controller 400, which is communicatively connected to both the semiconductor device 100 and the throttling device 300, thereby achieving efficient and precise information interaction and collaborative work between the components. The controller 400 can monitor the operating status of the semiconductor device 100 in real time and obtain the operating scenario of the semiconductor device 100 through the operating status; it determines the hot spot area 102 under the operating scenario, and controls the opening degree of the throttling device 300 corresponding to the heat dissipation microchannel 101 according to the correspondence between the scanned area and the corresponding heat dissipation microchannel 101. By controlling the opening degree of the throttling device 300, the flow rate of the heat exchange medium in the multiple heat dissipation microchannels 101 is adjusted. This ensures that the flow rate of the heat dissipation microchannel 101 corresponding to the hot spot area 102 is larger, improving heat dissipation capacity; while the flow rate of the heat dissipation microchannel 101 corresponding to the non-hot spot area 103 is relatively smaller, saving energy consumption.

[0066] It should be noted that the controller 400 can monitor the operating status of the semiconductor device 100 in real time, such as parameters like temperature, current, and voltage. Based on preset control strategies and algorithms, it promptly sends corresponding command signals to the throttling device 300 to precisely control the opening and closing degree or operating mode of the throttling device 300. This precise control mechanism ensures that during the operation of the semiconductor device 100, the heat dissipation device can adjust the flow rate of the coolant or the flow rate of the refrigerant in a timely and appropriate manner according to the actual heat generation, thereby achieving precise heat dissipation of the semiconductor device 100, preventing performance degradation or damage due to overheating, effectively improving the stability and reliability of the semiconductor device 100, and extending its service life. Furthermore, by optimizing the adjustment process of the throttling device 300 through the controller 400, unnecessary energy loss can be avoided, improving the energy efficiency ratio of the entire heat dissipation system and achieving energy saving and consumption reduction. This is of great significance for reducing equipment operating costs and meeting increasingly stringent energy conservation and environmental protection requirements.

[0067] like Figure 7 As shown, according to a second aspect of this disclosure, a heat dissipation method is provided, applicable to the aforementioned heat dissipation device, the method comprising steps S100 and S200.

[0068] In step S100, the operating scenario of the semiconductor device 100 is obtained.

[0069] In step S200, the opening degree of the throttling device 300 is controlled according to the operating scenario, and the flow rate of the heat exchange medium in the multiple heat dissipation microchannels 101 is adjusted by controlling the opening degree of the throttling device 300.

[0070] The heat dissipation method disclosed herein obtains the operating scenario of the semiconductor device 100 and controls the opening degree of the throttling device 300 according to the operating scenario. By controlling the opening degree of the throttling device 300, the flow rate of the heat exchange medium in the multiple heat dissipation microchannels 101 is adjusted. For example, the opening degree of the throttling device 300 corresponding to the hot spot area 102 in the operating scenario is increased to increase the flow rate of the heat exchange medium and increase the heat exchange capacity; the opening degree of the throttling device 300 corresponding to the non-hot spot area 103 in the operating scenario is decreased to meet the heat dissipation of the non-hot spot area 103, thereby reducing energy consumption.

[0071] The method disclosed herein can analyze the power consumption and temperature of semiconductor device 100 under different application scenarios, obtain the temperature distribution (hot spot area 102) under different scenarios, and control the on / off state of throttling device 300 and flow distribution on heat dissipation microchannel 101 through software to increase the flow near hot spot area 102 and reduce the flow in low temperature area, thereby effectively dissipating heat from semiconductor device 100 under different scenarios.

[0072] In some possible embodiments, the opening degree of the throttling device 300 is controlled according to the operating scenario. The flow rate of the heat exchange medium in the multiple heat dissipation microchannels 101 is adjusted by controlling the opening degree of the throttling device 300, including the following steps.

[0073] Based on the operating scenario of the semiconductor device 100, determine the hot spot area 102 and the non-hot spot area 103 of the semiconductor device 100.

[0074] The opening degree of the throttling element 300 of the heat dissipation microchannel 101 corresponding to the hot spot area 102 is controlled according to the hot spot area 102.

[0075] The opening degree of the throttling element 300 of the heat dissipation microchannel 101 corresponding to the non-hotspot region 103 is controlled according to the non-hotspot region 103.

[0076] First, the hot spot region 102 and non-hot spot region 103 of the semiconductor device 100 are determined based on the operating scenario of the semiconductor device 100. For example, the correspondence between different operating scenarios and the hot spot region 102 can be obtained through actual detection or simulation analysis. Of course, the hot spot region 102 of the semiconductor device 100 can also be accurately determined through corresponding monitoring methods and analysis algorithms, and other regions can be considered as non-hot spot regions 103. This determination process comprehensively considers the changes in various parameters of the semiconductor device 100 under the operating scenario, such as power consumption, operating frequency, and ambient temperature, so as to ensure that the identification of the hot spot region 102 has a high degree of accuracy and reliability. Subsequently, for the determined hot spot region 102 and non-hot spot region 103, the opening degree of the throttling device 300 of the corresponding heat dissipation microchannel 101 is precisely controlled. Specifically, for the hot spot region 102, the opening degree of the throttling device 300 of the corresponding heat dissipation microchannel 101 can be increased, and for the non-hot spot region 103, the opening degree of the throttling device 300 of the corresponding heat dissipation microchannel 101 can be decreased. Specifically, by selecting the heat dissipation microchannel 101 and adjusting the opening of the throttling device 300 based on parameters such as the size and temperature of the hot spot area 102, the flow rate of the heat exchange medium in multiple heat dissipation microchannels 101 can be finely adjusted.

[0077] This heat dissipation control strategy, which adjusts the opening of the throttling device 300 based on the operating scenario to regulate the flow rate of the heat exchange medium within the heat dissipation microchannel 101, effectively improves the heat dissipation performance of the semiconductor device 100. It allows for a more rational distribution of the heat exchange medium flow rate, enabling more precise heat dissipation of the hot spot area 102. This avoids localized overheating caused by excessive heat concentration, thereby improving the overall operational stability and reliability of the semiconductor device 100 and extending its service life. Simultaneously, rational flow rate adjustment optimizes the overall performance of the heat dissipation system, improves heat dissipation efficiency, and reduces energy consumption. This provides a strong guarantee for the efficient operation of the semiconductor device 100 under different operating scenarios, meeting its stringent requirements for heat dissipation performance and adapting to increasingly complex and diverse application needs.

[0078] like Figure 8 As shown, in some possible embodiments, the method further includes: acquiring temperature distribution maps of the semiconductor device 100 under different operating scenarios; acquiring hot spots and hot spot parameters based on the temperature distribution maps under different operating scenarios; wherein, the hot spot parameters include: hot spot location, number of hot spots, hot spot size, and hot spot temperature; determining hot spot regions 102 and non-hot spot regions 103 of the semiconductor device 100 under different operating scenarios based on the hot spots and hot spot parameters; determining heat dissipation microchannels 101 corresponding to the hot spot regions 102 and throttling devices 300 corresponding to the heat dissipation microchannels 101 based on the hot spot regions 102 under different operating scenarios; and determining heat dissipation microchannels 101 corresponding to the non-hot spot regions 103 and throttling devices 300 corresponding to the heat dissipation microchannels 101 based on the non-hot spot regions 103 under different operating scenarios.

[0079] The method for obtaining the temperature distribution map of the semiconductor device 100 can be as follows: under a pre-designed power consumption distribution of the semiconductor device 100, thermal simulation of different operating scenarios is used to obtain the temperature distribution on the semiconductor device 100, and the temperature distribution map is plotted based on the simulation results. Alternatively, the temperature distribution map can be obtained by detecting the temperature at various locations under different operating scenarios using various sensors when the actual semiconductor device 100 is operating. The map can be used to identify high-temperature points, i.e., hot spots, and hot spot parameters such as location, number, size, and temperature. Hot spot region 102 and non-hot spot region 103 are then determined based on the hot spots and their parameters. It should be noted that the hot spot temperature corresponds to the opening degree of the throttling device 300; the specific correspondence can be designed with reference to relevant documents or obtained experimentally by those skilled in the art, and will not be elaborated here.

[0080] Based on the positions of hot spot region 102 and non-hot spot region 103 on the semiconductor device 100, the heat dissipation microchannel 101 and throttling device 300 corresponding to the region are determined. That is, in each operating scenario, the heat dissipation microchannel 101 and throttling device 300 corresponding to hot spot region 102 and the heat dissipation microchannel 101 and throttling device 300 corresponding to non-hot spot region 103 are established and a relationship is established. This facilitates the controller 400 to send control commands to the corresponding throttling device 300 after the operating scenario of the semiconductor device 100 is subsequently obtained.

[0081] The specific operation process includes the following steps: First, acquire the temperature distribution map of the semiconductor device 100 under different operating scenarios. During the actual operation of the semiconductor device 100, due to differences in workload, power input, and external environmental conditions, it will exhibit various operating scenarios. For example, under low load operation, the overall heat generation of the device is relatively mild, with heat mainly concentrated near specific functional modules; while under high load or high frequency operation, the heat generation rate is faster, and the distribution range is more extensive. Through professional thermal imaging detection equipment or a high-precision temperature sensor network, the temperature conditions under these different scenarios can be monitored in real time and accurately, and presented in the form of an intuitive temperature distribution map. This step lays a solid data foundation for subsequent hotspot analysis, ensuring a comprehensive and accurate understanding of the device's temperature conditions.

[0082] Next, hotspots and their parameters are obtained based on temperature distribution maps under different operating scenarios. Hotspots, as high-temperature areas within semiconductor devices, are often the core focus of heat dissipation. Through in-depth analysis of temperature distribution maps, specific image processing algorithms or data analysis models can be used to accurately identify the locations of hotspots in various operating scenarios. These locations typically correspond to high-power components or active operating areas within the device. Simultaneously, the number and size of each hotspot can be determined. Obtaining these hotspot parameters allows for a more detailed description of the device's thermal state, providing precise quantitative basis for subsequent heat dissipation strategy development.

[0083] Based on the aforementioned hotspots and hotspot parameters, the hotspot regions 102 of the semiconductor device 100 are determined under different operating scenarios. The hotspot region 102 is a relative concept, encompassing the hotspot itself and a certain area around it affected by heat. By comprehensively considering parameters such as the location, number, and size of the hotspots, and applying spatial analysis and heat conduction theory, the boundaries of the hotspot region 102 corresponding to each operating scenario can be rationally delineated. This step realizes the transformation from point-like perception of hotspots to regionalized management of the hotspot region 102, which helps to more systematically plan the layout and coverage of heat dissipation measures.

[0084] Finally, based on the hotspot area 102 under different operating scenarios, the corresponding heat dissipation microchannel 101 and the corresponding throttling device 300 for the heat dissipation microchannel 101 are determined. Based on the temperature of the hotspot area 102 under different operating scenarios, the opening degree of the throttling device 300 for the heat dissipation microchannel 101 is determined. As a key heat dissipation structure that directly exchanges heat with the hotspot area 102, the design of the heat dissipation microchannel 101 must fully consider the shape, size, and distribution characteristics of the hotspot area 102. By optimizing parameters such as the geometry, spacing, and flow direction of the microchannel, heat dissipation efficiency can be effectively improved, allowing heat to be quickly transferred from the hotspot area 102. The matching throttling device 300 plays an important role in controlling the flow rate of the heat dissipation medium and adjusting the heat dissipation intensity. A reasonable design of the throttling device 300 can ensure that the heat dissipation medium flows at an appropriate speed within the microchannel, effectively removing heat while avoiding energy waste and system pressure problems caused by excessive flow. Through such collaborative design, the heat dissipation system can closely match the actual thermal requirements of the semiconductor device 100 under different operating scenarios, thereby achieving efficient and precise heat dissipation control, effectively reducing the operating temperature of the device, improving its operational stability and service life, and also helping to optimize the energy consumption performance of the entire heat dissipation system, providing a strong guarantee for the high performance and reliable operation of the semiconductor device 100.

[0085] According to a third aspect of this disclosure, an electronic device is also provided, which includes the aforementioned heat dissipation device, and therefore also possesses all the advantages of the aforementioned heat dissipation device. The electronic device includes, but is not limited to, mobile phones, tablets, laptops, smartwatches, workstations, data center equipment, etc.

[0086] The heat dissipation device, method, and electronic device disclosed herein include a throttling element 300 and multiple heat dissipation microchannels 101 disposed on a semiconductor device 100. According to the operating scenario of the semiconductor device 100, the flow rate of the heat exchange medium in the heat dissipation microchannels 101 is adjusted by controlling the opening degree of the throttling element 300, thereby controlling the temperature of the semiconductor device 100 in different operating scenarios. For example, a larger flow rate can be used for heat dissipation in the hot spot area 102, while a relatively smaller flow rate can be used for heat dissipation in the non-hot spot area 103, ensuring effective heat dissipation of the semiconductor device 100 in different operating scenarios and improving temperature uniformity.

[0087] The heat dissipation method disclosed herein analyzes the power consumption and temperature under different application scenarios in the early stage of semiconductor device 100 design to obtain the temperature distribution under different scenarios. By controlling the on / off state of the throttling device 300 on the microchannel and the flow distribution through software, the flow rate in the hot spot area 102 is increased and the flow rate in the low temperature area is reduced, thereby effectively dissipating heat from the semiconductor device 100 under different scenarios.

[0088] The preferred embodiments of this disclosure have been described in detail above with reference to the accompanying drawings. However, this disclosure is not limited to the specific details of the above embodiments. Within the scope of the technical concept of this disclosure, various simple modifications can be made to the technical solutions of this disclosure, and these simple modifications all fall within the protection scope of this disclosure.

[0089] It should also be noted that the various specific technical features described in the above specific embodiments can be combined in any suitable manner without contradiction. In order to avoid unnecessary repetition, this disclosure will not describe the various possible combinations separately.

[0090] Furthermore, various different embodiments of this disclosure can be combined in any way, as long as they do not violate the spirit of this disclosure, they should also be regarded as the content disclosed in this disclosure.

Claims

1. A heat dissipating device for dissipating heat from a semiconductor device, characterized by, The heat dissipation device includes multiple heat dissipation microchannels disposed in the semiconductor device; The heat dissipation device also includes a throttling element, which is connected to the heat dissipation microchannel. The throttling element is configured to control its opening degree according to the operating scenario of the semiconductor device, so as to adjust the flow rate of the heat exchange medium in the heat dissipation microchannel.

2. The heat dissipating device according to claim 1, wherein The heat dissipation device further includes a cooling pipe connected to the heat dissipation microchannel, and the throttling element is connected to the cooling pipe to adjust the flow rate in the cooling pipe and the corresponding heat dissipation microchannel.

3. The heat dissipating device of claim 2, wherein, One of the cooling pipes is connected to one of the heat dissipation microchannels.

4. The heat dissipating device of claim 2, wherein, One of the cooling pipes is connected to a plurality of the heat dissipation microchannels.

5. The heat dissipating device of claim 1, wherein Different operating scenarios of the semiconductor device create different hotspot areas; One or more of the heat dissipation microchannels correspond to at least one of the hotspot areas; One of the heat dissipation microchannels is connected to one of the throttling elements.

6. The heat dissipating device of claim 1, wherein Different operating scenarios of the semiconductor device create different hotspot areas; One or more of the heat dissipation microchannels correspond to at least one of the hotspot areas; The multiple heat dissipation microchannels are connected to one or more of the throttling elements.

7. The heat dissipating device of claim 1, wherein The throttling element is located at the inlet end and / or the outlet end of the heat dissipation microchannel.

8. The heat dissipating device of claim 1, wherein, The heat dissipation device further includes a circulation loop, one end of which is connected to one end of the heat dissipation microchannel through the throttling element, and the other end of which is connected to the other end of the heat dissipation microchannel. The circulation loop is equipped with a heat exchange medium storage tank and a circulation pump.

9. The heat dissipating device according to any one of claims 1 to 8, wherein The heat dissipation device also includes a controller, which is communicatively connected to the semiconductor device and the throttling device.

10. An electronic device, comprising: Includes the heat dissipation device according to any one of claims 1-9.

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