Modally and polarization controlled vertical cavity surface emitting laser structure

Abstract

The utility model discloses a perpendicular resonant cavity surface emission type laser structure of modal and polarized control, and one embodiment contains a substrate, a first DBR layer set on the substrate, a diode set on the first DBR layer, a local layer set on the diode, a active light emitting layer set on the local layer, a second DBR layer set on the active light emitting layer and a current guide layer set on the second DBR layer, another embodiment contains a substrate, a first DBR layer set on the substrate, a active light emitting layer set on the first DBR layer, a second DBR layer set on the active light emitting layer, a diode set on the second DBR layer, a local layer set on the diode, a third DBR layer set on the local layer and a current guide layer set on the third DBR layer.

Description

Technical Field

[0001] This utility model relates to the field of laser emitters, and in particular to a vertical resonant cavity surface-emitting laser structure with modal and polarization controllable. Background Technology

[0002] A vertical cavity surface emitting laser (VCSEL) structure is formed by stacking multiple semiconductor structures on a substrate. The multiple semiconductor structures include a PIN junction, through which the VCSEL structure can generate laser light. Specifically, the PIN junction includes a P-type distributed Bragg reflector (DBR), an active light-emitting layer, and an N-type DBR, with the active light-emitting layer disposed between the P-type DBR and the N-type DBR.

[0003] The P-type DBR, the active light-emitting layer, and the N-type DBR form a resonant cavity structure. The holes of the P-type DBR and the electrons of the N-type DBR combine with each other in the active light-emitting layer to generate photons. VCSEL structures have the problem of not being able to effectively confine the current, which means that the photons generated by the VCSEL structure cannot be effectively confined to a region, thus negatively affecting the photoelectric properties of the laser beam generated by the VCSEL structure. Therefore, a structure for confining the current is often added to the VCSEL structure to improve the above problem.

[0004] For example, Figure 3 This diagram illustrates an ion-planted VCSEL structure, which includes a substrate 110 and an epitaxially formed N-type DBR layer 111, an active light-emitting layer 112, and a P-type DBR layer 113. An ion-planted region 114 is formed in the P-type DBR layer 113 by ion-planting, which limits the current to only passing through the central region of the P-type DBR layer 113 where the ion-planted region 114 is not located. However, the arrangement of the ion-planted region 114 causes a current nonlinear bending phenomenon, resulting in lateral side-mode noise in the P-type DBR layer 113, which negatively affects the photoelectric characteristics of the laser beam. Utility Model Content

[0005] The existing ion-implanted VCSEL structure suffers from nonlinear current transitions due to the arrangement of the ion-implanted region, affecting the photoelectric properties of the generated laser beam. Therefore, this invention proposes a vertical resonant cavity surface-emitting laser structure with modal and polarization control, comprising:

[0006] One substrate;

[0007] A first distributed Bragg reflector layer is disposed on the top surface of the substrate;

[0008] A diode, comprising:

[0009] An N-type layer is disposed on the top surface of the first distributed Bragg mirror layer; and

[0010] A P-type layer is disposed on the top surface of the N-type layer, and the P-type layer has the same shape and size as the N-type layer;

[0011] A limiting layer is disposed on the top surface of the diode and the first distributed Bragg reflector layer, and the limiting layer covers the side of the diode;

[0012] An active light-emitting layer is disposed on the top surface of the limiting layer;

[0013] A second distributed Bragg reflector layer is disposed on the top surface of the active light-emitting layer; and

[0014] A current guiding layer is disposed on the top surface of the second distributed Bragg reflector layer.

[0015] Furthermore, this invention also proposes another vertical resonant cavity surface-emitting laser structure with modal and polarization controllable, comprising:

[0016] One substrate;

[0017] A first distributed Bragg reflector layer is disposed on the top surface of the substrate;

[0018] An active light-emitting layer is disposed on the top surface of the first distributed Bragg mirror layer;

[0019] A second distributed Bragg reflector layer is disposed on the top surface of the active light-emitting layer;

[0020] A diode, comprising:

[0021] A P-type layer is disposed on the top surface of the second distributed Bragg mirror layer; and

[0022] An N-type layer is disposed on the top surface of the P-type layer, and the N-type layer has the same shape and size as the P-type layer;

[0023] A limiting layer is disposed on the top surface of the diode and the second distributed Bragg reflector layer, and the limiting layer covers the side of the diode;

[0024] A third distributed Bragg reflector layer is disposed on the top surface of the confined layer; and

[0025] A current guiding layer is disposed on the top surface of the third distributed Bragg reflector layer.

[0026] The two modally and polarization-controllable vertical resonant cavity surface-emitting laser structures of this invention use the diode and the confinement layer as current-confining structures, replacing the ion implantation region as described in the prior art. This reduces the occurrence of current nonlinear transition (kink) phenomenon, thereby reducing the influence of noise on the laser beam and stabilizing its photoelectric characteristics. Furthermore, the shape, size, and orientation of the diode can be adjusted according to requirements, further enabling this invention to have modal and polarization control effects. Attached Figure Description

[0027] Figures 1A to 1E : A schematic diagram of the manufacturing process of the first embodiment of the structure of this utility model, wherein Figure 1B-1 and 1B-2 They are respectively Figure 1B A top-down plan view.

[0028] Figure 1F : A side cross-sectional view of the back-emitting light state of the first embodiment of the present invention.

[0029] Figure 1G : A side view cross-sectional schematic diagram of the first embodiment of the structure of this utility model in the forward light emission state.

[0030] Figures 2A to 2E : A schematic diagram of the manufacturing process of the second embodiment of the structure of this utility model.

[0031] Figure 2F : A side cross-sectional view of the back-emitting light state of the second embodiment of the present invention.

[0032] Figure 2G : A side view cross-sectional schematic diagram of the front light output state of the second embodiment of the structure of this utility model.

[0033] Figure 3 : A side view of an existing ion-implanted VCSEL structure. Detailed Implementation

[0034] To gain a detailed understanding of the technical features and practical effects of this utility model, and to enable its implementation, the following detailed description is provided with reference to the embodiments shown in the figures:

[0035] The present invention relates to a modally and polarization-controllable vertical cavity surface-emitting laser (VCSEL) structure, which is a multilayer epitaxial structure. This multilayer epitaxial structure uses a substrate as a carrier for epitaxial growth and includes at least two distributed Bragg reflectors (DBRs), where the Bragg reflector can also be called a Bragg mirror. The present invention can be divided into a first embodiment and a second embodiment according to different stacking numbers and stacking orders in the multilayer epitaxial structure. The following describes the fabrication process and structure of the two embodiments of the present invention with reference to the figures.

[0036] Please see Figures 1A to 1E This is a schematic diagram of the manufacturing process of the first embodiment of this utility model. Figure 1A The image shows a side cross-sectional view of a substrate 10, a first distributed Bragg reflector layer (first DBR layer) 20, and a diode 30. The first distributed Bragg reflector layer 20 and the diode 30 are sequentially stacked on the substrate 10, that is, the first distributed Bragg reflector layer 20 is disposed on the top surface of the substrate 10, and the diode 30 is disposed on the top surface of the first distributed Bragg reflector layer 20.

[0037] Specifically, the first distributed Bragg reflector layer 20 is formed on the top surface of the substrate 10 by epitaxy. The diode 30 includes an N-type layer 31 and a P-type layer 32. The N-type layer 31 and the P-type layer 32 are sequentially stacked on the first distributed Bragg reflector layer 20 by epitaxy. That is, the N-type layer 31 is disposed on the top surface of the first distributed Bragg reflector layer 20, and the P-type layer 32 is disposed on the top surface of the N-type layer 31.

[0038] For example, the substrate 10 may be a gallium arsenide (GaAs) substrate, the diode 30 may be a tunneling diode, and the first distributed Bragg reflector layer 20 may be lightly doped with an N-type semiconductor. The N-type layer 31 and the P-type layer 32 may be formed by ultra-high doping of N-type gallium arsenide and ultra-high doping of P-type gallium arsenide, respectively. That is, the first distributed Bragg reflector layer 20 is an n-DBR, the N-type layer 31 is n++GaAs, and the P-type layer 32 is p++GaAs.

[0039] Please see Figure 1BThe diode 30 is etched to make the N-type layer 31 and the P-type layer 32 have the same shape and size. For example, the patterns of the N-type layer 31 and the P-type layer 32 can be adjusted by photolithography according to the requirements of modal control and polarization control. Please refer to [link to relevant documentation]. Figure 1B-1 and 1B-2 , Figure 1B-1 and 1B-2 They are respectively Figure 1B The top view shows that the diode 30 can be rectangular or elliptical, that is, both the N-type layer 31 and the P-type layer 32 are rectangular or elliptical. The diode 30 has a center line 33, which can have an angle with a first axis D1. The size of the angle is adjusted according to the requirements of modal control and polarization control.

[0040] Please see Figure 1C A confinement layer 40, an active light-emitting layer 50, a second distributed Bragg reflector layer (second DBR layer) 60, and a current guiding layer 70 are sequentially stacked on the diode 30 and the first distributed Bragg reflector layer 20 via epitaxy. Specifically, the confinement layer 40 is disposed on the top surface of the diode 30 and the first distributed Bragg reflector layer 20, and the confinement layer 40 covers the side of the diode 30. The active light-emitting layer 50 is disposed on the top surface of the confinement layer 40, the second distributed Bragg reflector layer 60 is disposed on the top surface of the active light-emitting layer 50, and the current guiding layer 70 is disposed on the top surface of the second distributed Bragg reflector layer 60.

[0041] For example, the current guiding layer 70 can be a gallium arsenide (GaAs) layer, the confinement layer 40 can be formed by lightly doping p-type gallium arsenide, and the second distributed Bragg reflector layer 60 is also lightly doped and is of the same N-type semiconductor type as the first distributed Bragg reflector layer 20, that is, the confinement layer 40 is p-GaAs, and the second distributed Bragg reflector layer 60 is also an n-DBR.

[0042] Furthermore, the active light-emitting layer 50 may include a P-type space layer 51, an N-type space layer 52, and a multiple quantum well (MQW) layer 53. The P-type space layer 51 is adjacent to the confinement layer 40, the N-type space layer 52 is adjacent to the second distributed Bragg reflector layer 60, and the multiple quantum well layer 53 is disposed between the P-type space layer 51 and the N-type space layer 52. The multiple quantum well layer 53 has multiple quantum wells, which allow holes passing through the P-type space layer 51 and electrons passing through the N-type space layer 52 to combine in the multiple quantum wells of the multiple quantum well layer 53.

[0043] It should be noted that a vertical cavity can be formed between the first distributed Bragg reflector layer 20 and the second distributed Bragg reflector layer 60. When electrons and holes combine in the active light-emitting layer 50, they release energy according to the combination method and the law of conservation of energy to generate photons with corresponding wavelengths or frequencies. The photons can resonate and reflect multiple times in the vertical cavity, and the photons can be randomly absorbed by electrons. The electrons that absorb the photons will enter an excited state and then generate another photon to release energy. Finally, the electrons in the excited state in the vertical cavity will produce stimulated emission of photons to generate laser light.

[0044] This completes the first embodiment of the modally and polarization-controllable vertical cavity surface-emitting laser structure. Further steps can be taken by etching the current guiding layer 70, the second distributed Bragg mirror layer 60, the active light-emitting layer 50, and the confinement layer 40 to form... Figure 1D The diagram shows a mesa pillar extending from the current guiding layer 70 toward the substrate 10. During the formation of the mesa pillar, the first distributed Bragg reflector layer 20 may also be further etched to increase the overall heat dissipation effect.

[0045] Please see Figure 1E A protective layer 80 is formed by passivating the surface of the cylindrical structure and the top surface of the first distributed Bragg reflector layer 20. In other words, the protective layer 80 is disposed on the top surface of the current guiding layer 70 and surrounds and covers the side surface of the cylindrical structure (the current guiding layer 70, the second distributed Bragg reflector layer 60, the active light-emitting layer 50, and the confinement layer 40). For example, the protective layer 80 can be an insulating material such as silicon nitride (SiN) or silicon dioxide (SiO2), but this invention is not limited to this.

[0046] Please see Figure 1F , Figure 1F This invention displays the backlight state sample of the first embodiment of the present invention. Specifically, continuing... Figure 1EThe fabrication process shown involves etching the protective layer 80 on the top surface of the current guiding layer 70 to expose a portion of the current guiding layer 70, forming at least one protective layer opening 81. This at least one protective layer opening 81 can be used to subsequently form a metal contact for conducting current. Then, the surface of the protective layer 80, the exposed surface of the current guiding layer 70, and the bottom surface of the substrate 10 are metallized, i.e., an upper metal layer 91 is formed covering the protective layer 80 and the exposed top surface of the current guiding layer 70, and a lower metal layer 92 is formed on the bottom surface of the substrate 10, exposing a portion of the substrate 10 to form a lower light-emitting opening BO. The upper metal layer 91 fills the at least one protective layer opening 81 and makes electrical contact with the current guiding layer 70 to form the metal contact, and the center of the lower light-emitting opening BO corresponds to the center of the cylindrical structure.

[0047] Please see Figure 1G , Figure 1G This invention displays a front-emitting light sample of the first embodiment, specifically, similar to the back-emitting light sample of the first embodiment. Figure 1E After the manufacturing process shown, etching, metallization and other processes are performed. The difference is that in the first embodiment, the upper metal layer 91 of the positive light-emitting state is disposed on the top surface of the protective layer 80 and the exposed current guiding layer 70, and the exposed part of the protective layer 80 forms an upper light-emitting opening TO. The lower metal layer 92 is disposed on the bottom surface of the substrate 10 and on the unexposed part of the substrate 10. The upper metal layer 91 fills the at least one protective layer opening 81 and makes electrical contact with the current guiding layer 70 to form the metal contact. The center of the upper light-emitting opening TO corresponds to the center of the cylindrical structure.

[0048] The current received by the upper metal layer 91 can be limited by the diode 30. The limited current causes the active light-emitting layer 50 to generate photons. The photons resonate in the vertical resonant cavity (between the first distributed Bragg mirror layer 20 and the second distributed Bragg mirror layer 60) to generate laser light. The laser light can be emitted through the upper light-emitting opening TO or the lower light-emitting opening BO. It should be noted that since the substrate 10 is included between the lower light-emitting opening BO and the diode 30, the distance between the lower light-emitting opening BO and the diode 30 is relatively greater than the distance between the upper light-emitting opening TO and the diode 30. Therefore, the lower light-emitting opening BO can be further away from the heat generated by the diode 30, reducing the light loss near the lower light-emitting opening BO (i.e., reducing the thermal decay effect), thereby improving the overall energy conversion efficiency.

[0049] Please see Figures 2A to 2E This is a schematic diagram of the manufacturing process of the second embodiment of this utility model. Figure 2AThe image shows a side cross-sectional view of a substrate 10', a first distributed Bragg reflector layer (first DBR layer) 20', an active light-emitting layer 30', a second distributed Bragg reflector layer (second DBR layer) 40', and a diode 50'. The first distributed Bragg reflector layer 20', the active light-emitting layer 30', the second distributed Bragg reflector layer 40', and the diode 50' are sequentially stacked on the substrate 10' by epitaxy. Specifically, the first distributed Bragg reflector layer 20' is disposed on the top surface of the substrate 10', the active light-emitting layer 30' is disposed on the top surface of the first distributed Bragg reflector layer 20', the second distributed Bragg reflector layer 40' is disposed on the top surface of the active light-emitting layer 30', and the diode 50' is disposed on the top surface of the second distributed Bragg reflector layer 40'.

[0050] The substrate 10' can be a gallium arsenide (GaAs) substrate. The first distributed Bragg reflector layer 20' is lightly doped to be an N-type semiconductor, that is, the first distributed Bragg reflector layer 20' is an n-DBR. The active light-emitting layer 30' also includes an N-type space layer 31', a P-type space layer 32' and a multiple quantum well layer 33'. The difference is that the N-type space layer 31' is adjacent to the first distributed Bragg reflector layer 20', the P-type space layer 32' is adjacent to the second distributed Bragg reflector layer 40', and the multiple quantum well layer 33' is disposed between the N-type space layer 31' and the P-type space layer 32'.

[0051] The second distributed Bragg reflector layer 40' is lightly doped to be a P-type semiconductor, i.e., the second distributed Bragg reflector layer 40' is a p-DBR. The diode 50' also includes a P-type layer 51' and an N-type layer 52'. The P-type layer 51' is disposed on the top surface of the second distributed Bragg reflector layer 40', and the N-type layer 52' ​​is disposed on the top surface of the P-type layer 51'. The P-type layer 51' and the N-type layer 52' ​​are formed by ultra-high doping of P-type gallium arsenide and ultra-high doping of N-type gallium arsenide, respectively. That is, the P-type layer 51' is p++GaAs, and the N-type layer 52' ​​is n++GaAs.

[0052] Please see Figure 2B The diode 50' is etched to make the P-type layer 51' and the N-type layer 52' ​​have the same shape and size. As mentioned above, the patterns of the P-type layer 51' and the N-type layer 52' ​​can be adjusted by photolithography according to the requirements of modal control and polarization control. For example, the diode 50' can be a rectangle or an ellipse, that is, the P-type layer 51' and the N-type layer 52' ​​can both be rectangles or both be ellipses.

[0053] Please see Figure 2CA confinement layer 60', a third distributed Bragg reflector layer (third DBR layer) 70', and a current guiding layer 80' are sequentially stacked on the diode 50' and the second distributed Bragg reflector layer 40' via epitaxy. That is, the confinement layer 60' is disposed on the top surface of the diode 50' and the second distributed Bragg reflector layer 40', and the confinement layer 60' covers the side of the diode 50'. The third distributed Bragg reflector layer 70' is disposed on the top surface of the confinement layer 60', and the current guiding layer 80' is disposed on the top surface of the third distributed Bragg reflector layer 70'. For example, the confinement layer 60' can be formed by lightly doping N-type gallium arsenide, and the third distributed Bragg reflector layer 70' is also lightly doped to be the same N-type semiconductor type as the first distributed Bragg reflector layer 20'. That is, the confinement layer 40 is n-GaAs, and the third distributed Bragg reflector layer 70' is also n-DBR.

[0054] This completes the second embodiment of the modally and polarization-controllable vertical cavity surface-emitting laser structure. Further steps can be taken by etching the current guiding layer 80', the third distributed Bragg mirror layer 70', the confinement layer 60', the second distributed Bragg mirror layer 40', and the active light-emitting layer 30' to form a structure similar to... Figure 2D The cylindrical structure shown extends from the current guiding layer 80' toward the substrate 10'. During the formation of the cylindrical structure, the first distributed Bragg reflector layer 20' may also be further etched to increase the overall heat dissipation effect.

[0055] Please see Figure 2E The surface of the cylindrical structure and the top surface of the first distributed Bragg reflector layer 20' are passivated to form a protective layer 90'. In other words, the protective layer 90' is disposed on the top surface of the current guiding layer 80' and surrounds and covers the side surface of the cylindrical structure (the current guiding layer 80', the third distributed Bragg reflector layer 70', the confinement layer 60', the second distributed Bragg reflector layer 40', and the active light-emitting layer 30'). For example, the protective layer 90' can be an insulating material such as silicon nitride (SiN) or silicon dioxide (SiO2), but this utility model is not limited to this.

[0056] Please see Figure 2F , Figure 2F This invention displays the backlight state sample of the second embodiment of the present invention. Specifically, following... Figure 2EThe fabrication process shown involves etching the protective layer 90' on the top surface of the current guiding layer 80' to expose a portion of the current guiding layer 80' and form at least one protective layer opening 91'. This at least one protective layer opening 91' allows for the subsequent formation of a metal contact for conducting current. Then, the surface of the protective layer 90', the exposed surface of the current guiding layer 80', and the bottom surface of the substrate 10' are metallized, forming an upper metal layer 101' covering the protective layer 90' and the exposed top surface of the current guiding layer 80', and a lower metal layer 102' on the bottom surface of the substrate 10', exposing a portion of the substrate 10' to form the lower light-emitting opening BO. The upper metal layer 101' fills the at least one protective layer opening 91' and makes electrical contact with the current guiding layer 80' to form the metal contact, and the center of the lower light-emitting opening BO aligns with the center of the cylindrical structure.

[0057] Please see Figure 2G , Figure 2G This invention displays a front-emitting light sample of the second embodiment, specifically, similar to the back-emitting light sample of the second embodiment. Figure 1E Following the fabrication process shown, etching, metallization, and other processes are performed. The difference lies in that, in the first embodiment, the upper metal layer 101' of the positive light-emitting sample is disposed on the top surface of the protective layer 90' and the exposed current guiding layer 80', and the exposed portion of the protective layer 90' forms the upper light-emitting opening TO. The lower metal layer 102' is disposed on the bottom surface of the substrate 10' and the unexposed portion of the substrate 10'. The upper metal layer 101' fills at least one protective layer opening 91' and makes electrical contact with the current guiding layer 80' to form the metal contact, and the center of the upper light-emitting opening TO corresponds to the center of the cylindrical structure. Compared with the second embodiment, the back-emitting sample of the second embodiment can further reduce the light loss near the lower light-emitting opening BO (i.e., reduce the thermal decay effect) and thus improve the overall energy conversion efficiency.

[0058] The first and second embodiments of the vertical resonant cavity surface-emitting laser structure with modal and polarization control of this invention use diodes 30, 50' and confinement layers 40, 60' as current-confining structures, replacing the ion-planted region 114 as described in the prior art. This reduces the occurrence of current nonlinear transition (kink) phenomenon, thereby reducing the influence of noise on the laser beam and stabilizing its photoelectric characteristics. Furthermore, the shape, size, and orientation of the diodes 30, 50' can be adjusted according to requirements, further enabling this invention to have modal and polarization control capabilities.

[0059] In summary, this description merely illustrates the implementation methods or embodiments of the technical means employed by this utility model to solve the problem, and is not intended to limit the scope of implementation of this utility model patent. That is, all equivalent changes and modifications made in accordance with the wording of this utility model patent application or the scope of this utility model patent are covered by the scope of this utility model patent.

Claims

1. A vertical resonant cavity surface-emitting laser structure with modal and polarization controllable, characterized in that, Include: One substrate; A first distributed Bragg reflector layer is disposed on the top surface of the substrate; A diode, comprising: An N-type layer is disposed on the top surface of the first distributed Bragg mirror layer; and A P-type layer is disposed on the top surface of the N-type layer, and the P-type layer has the same shape and size as the N-type layer; A limiting layer is disposed on the top surface of the diode and the first distributed Bragg reflector layer, and the limiting layer covers the side of the diode; An active light-emitting layer is disposed on the top surface of the limiting layer; A second distributed Bragg reflector layer is disposed on the top surface of the active light-emitting layer; and A current guiding layer is disposed on the top surface of the second distributed Bragg reflector layer.

2. The vertical resonant cavity surface-emitting laser structure with modal and polarization control as described in claim 1, characterized in that: The first distributed Bragg mirror layer and the second distributed Bragg mirror layer are N-type semiconductors; The active light-emitting layer includes: A P-type spatial layer, adjacent to this confined layer; An N-type space layer, adjacent to the second distributed Bragg mirror layer; and A multiple quantum well layer is disposed between the P-type space layer and the N-type space layer.

3. The vertical resonant cavity surface-emitting laser structure with modal and polarization control as described in claim 1, characterized in that, Further includes: A protective layer is disposed on the top surface of the current guiding layer and a portion of the current guiding layer is exposed to form at least one protective layer opening; An upper metal layer covers the top surface of the protective layer and the exposed current-conducting layer, the upper metal layer filling the opening of at least one protective layer and making electrical contact with the current-conducting layer; and A metal layer is disposed on the bottom surface of the substrate and a portion of the substrate is exposed to form a light-emitting opening.

4. The vertical resonant cavity surface-emitting laser structure with modal and polarization control as described in claim 1, characterized in that, Further includes: A protective layer is disposed on the top surface of the current guiding layer and a portion of the current guiding layer is exposed to form at least one protective layer opening; An upper metal layer covers the top surface of the protective layer and the exposed current guiding layer, and the exposed portion of the protective layer forms an upper light-emitting opening. The upper metal layer fills the at least one protective layer opening and is in electrical contact with the current guiding layer. as well as A metal layer is disposed on the bottom surface of the substrate.

5. The vertical resonant cavity surface-emitting laser structure with modal and polarization control as described in claim 1, characterized in that, The limiting layer is a P-type semiconductor.

6. The vertical resonant cavity surface-emitting laser structure with modal and polarization control as described in claim 1, characterized in that, The P-type layer and the N-type layer are rectangular in shape.

7. The vertical resonant cavity surface-emitting laser structure with modal and polarization control as described in claim 1, characterized in that, The P-type layer and the N-type layer are elliptical in shape.

8. A vertical resonant cavity surface-emitting laser structure with modal and polarization controllable, characterized in that, Include: One substrate; A first distributed Bragg reflector layer is disposed on the top surface of the substrate; An active light-emitting layer is disposed on the top surface of the first distributed Bragg mirror layer; A second distributed Bragg reflector layer is disposed on the top surface of the active light-emitting layer; A diode, comprising: A P-type layer is disposed on the top surface of the second distributed Bragg mirror layer; and An N-type layer is disposed on the top surface of the P-type layer, and the N-type layer has the same shape and size as the P-type layer; A limiting layer is disposed on the top surface of the diode and the second distributed Bragg reflector layer, and the limiting layer covers the side of the diode; A third distributed Bragg reflector layer is disposed on the top surface of the confined layer; and A current guiding layer is disposed on the top surface of the third distributed Bragg reflector layer.

9. The vertical resonant cavity surface-emitting laser structure with modal and polarization control as described in claim 8, characterized in that: The first and third distributed Bragg mirror layers are N-type semiconductors, and the second distributed Bragg mirror layer is a P-type semiconductor. The active light-emitting layer includes: A P-type space layer, adjacent to the second distributed Bragg mirror layer; An N-type space layer, adjacent to the first distributed Bragg mirror layer; and A multiple quantum well layer is disposed between the P-type space layer and the N-type space layer.

10. The vertical resonant cavity surface-emitting laser structure with modal and polarization control as described in claim 8, characterized in that, Further includes: A protective layer is disposed on the top surface of the current guiding layer and a portion of the current guiding layer is exposed to form at least one protective layer opening; An upper metal layer covers the top surface of the protective layer and the exposed current-conducting layer, the upper metal layer filling the opening of at least one protective layer and making electrical contact with the current-conducting layer; and A metal layer is disposed on the bottom surface of the substrate and a portion of the substrate is exposed to form a light-emitting opening.

11. The vertical resonant cavity surface-emitting laser structure with modal and polarization control as described in claim 8, characterized in that, Further includes: A protective layer is disposed on the top surface of the current guiding layer and a portion of the current guiding layer is exposed to form at least one protective layer opening; An upper metal layer covers the top surface of the protective layer and the exposed current guiding layer, and the exposed portion of the protective layer forms an upper light-emitting opening. The upper metal layer fills the at least one protective layer opening and is in electrical contact with the current guiding layer. as well as A metal layer is disposed on the bottom surface of the substrate.

12. The vertical resonant cavity surface-emitting laser structure with modal and polarization control as described in claim 8, characterized in that, The limiting layer is an N-type semiconductor.

13. The vertical resonant cavity surface-emitting laser structure with modal and polarization control as described in claim 8, characterized in that, The P-type layer and the N-type layer are rectangular in shape.

14. The vertical resonant cavity surface-emitting laser structure with modal and polarization control as described in claim 8, characterized in that, The P-type layer and the N-type layer are elliptical in shape.

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