Vertical cavity surface emitting laser structure with lateral coupling cavity

Abstract

A vertical cavity surface emitting laser structure with a transverse coupled cavity, one embodiment includes a substrate, a first DBR layer, a PN junction device, a confinement layer, an active layer, a second DBR layer, a current injection layer, and an insulator disposed in the current injection layer and the second DBR layer, another embodiment includes a substrate, a first DBR layer, an active layer, a second DBR layer, a PN junction device, a confinement layer, a third DBR layer, a current injection layer, and an insulator disposed in the current injection layer, the third DBR layer, the confinement layer, the PN junction device and the second DBR layer; the PN junction device includes a first cavity and at least a second cavity connected to form a photon-photon resonance (PPR) effect.

Description

Technical Field

[0001] This utility model relates to the field of laser emitters, and in particular to a vertical resonant cavity surface-emitting laser structure with a transversely coupled cavity. Background Technology

[0002] A Vertical Cavity Surface Emitting Laser (VCSEL) structure is formed by stacking multiple semiconductor structures on a substrate. These multiple semiconductor structures include a PIN layer structure comprising a P-type layer, an active light-emitting layer, and an N-type layer. The active light-emitting layer is disposed between the P-type and N-type layers. The P-type layer, the active light-emitting layer, and the N-type layer form a resonant cavity structure. Holes in the P-type layer and electrons in the N-type layer combine in the active light-emitting layer to generate photons. These photons vibrate within the resonant cavity structure, thus generating laser light. VCSEL structures possess characteristics such as high beam quality, low threshold current, and easy coupling with optical fibers, and are therefore widely used in optical communications, optical radar, and other fields.

[0003] With the rapid development of AI and data centers in recent years, a large amount of data needs to be transmitted quickly through optical communication, which has gradually increased the demand for bandwidth in the field of optical communication. Consequently, the maximum modulation speed that VCSEL structure can provide has become increasingly important. For example, currently, the speed of existing VCSEL structures is often improved by directly modulating the bandwidth. However, this method is limited by factors such as resonant frequency, relaxation oscillation frequency, and damping ratio, resulting in limited speed improvement of existing VCSEL structures that cannot meet market demands. Utility Model Content

[0004] Existing VCSEL structures have limited maximum modulation speeds, resulting in bandwidth limitations that cannot meet the demands of today's high-volume data transmission. Therefore, this invention proposes a vertical resonant cavity surface-emitting laser structure with a transversely coupled cavity, comprising:

[0005] One substrate;

[0006] A first distributed Bragg reflector layer is disposed on the top surface of the substrate;

[0007] A PN junction element, comprising:

[0008] A first cavity is disposed on the top surface of the first distributed Bragg mirror layer; and

[0009] At least one second cavity is disposed on the top surface of the first distributed Bragg reflector layer, and the at least one second cavity is respectively connected to the first cavity;

[0010] A limiting layer is disposed on the top surface of the PN junction element and the first distributed Bragg reflector layer, and the limiting layer covers the side of the PN junction element;

[0011] An active light-emitting layer is disposed on the top surface of the limiting layer;

[0012] A second distributed Bragg reflector layer is disposed on the top surface of the active light-emitting layer;

[0013] A current guiding layer is disposed on the top surface of the second distributed Bragg reflector layer; and

[0014] An insulator is formed from the top surface of the current guiding layer and disposed in the current guiding layer and the second distributed Bragg reflector layer.

[0015] Furthermore, this invention also proposes another vertical resonant cavity surface-emitting laser structure with a transversely coupled cavity, comprising:

[0016] One substrate;

[0017] A first distributed Bragg reflector layer is disposed on the top surface of the substrate;

[0018] An active light-emitting layer is disposed on the top surface of the first distributed Bragg mirror layer;

[0019] A second distributed Bragg reflector layer is disposed on the top surface of the active light-emitting layer;

[0020] A PN junction element, comprising:

[0021] A first cavity is disposed on the top surface of the second distributed Bragg mirror layer; and

[0022] At least one second cavity is disposed on the top surface of the second distributed Bragg reflector layer, and the at least one second cavity is respectively connected to the first cavity;

[0023] A limiting layer is disposed on the top surface of the PN junction element and the second distributed Bragg reflector layer, and the limiting layer covers the side of the PN junction element;

[0024] A third distributed Bragg mirror layer is disposed on the top surface of the confined layer;

[0025] A current guiding layer is disposed on the top surface of the third distributed Bragg reflector layer; and

[0026] An insulator is formed from the top surface of the current guiding layer and disposed in the current guiding layer, the third distributed Bragg reflector layer, the confinement layer, the PN junction element, and the second distributed Bragg reflector layer.

[0027] In the two types of vertical resonant cavity surface-emitting laser structures with transversely coupled cavities described above, the photons generated by the active light-emitting layer can vibrate not only in the distributed Bragg mirror layers but also form a photon-photon resonance (PPR) effect in the at least one second cavity of the PN junction element, thereby improving the modulation bandwidth of the overall VCSEL structure. Furthermore, this invention uses the PN junction element and the confinement layer as a current-limiting structure. Compared with the existing VCSEL structure that uses oxides as a current-limiting structure, the PN junction element of this invention can reduce the occurrence of damage and peeling, thereby improving the reliability of the overall VCSEL structure. Attached Figure Description

[0028] Figures 1A to 1F : A schematic diagram of the manufacturing process of the first embodiment of the structure of this utility model, wherein Figure 1B-1 for Figure 1B Top view plan, Figure 1B-2 This is a schematic diagram showing other top shapes of PN junction elements.

[0029] Figures 2A to 2F : A schematic diagram of the manufacturing process of the second embodiment of the structure of this utility model. Detailed Implementation

[0030] To provide a detailed understanding of the technical features and practical effects of this utility model, and to facilitate its implementation, the following detailed description is provided using the embodiments shown in the figures:

[0031] The Vertical Cavity Surface Emitting Laser (VCSEL) structure with a transversely coupled cavity provided by this invention is a multilayer epitaxial structure. This multilayer epitaxial structure uses a substrate as a carrier for epitaxial growth and includes at least two distributed Bragg reflectors (DBRs), where the Bragg reflector can also be called a Bragg mirror. This invention can be divided into a first embodiment and a second embodiment according to different stacking numbers and stacking orders in the multilayer epitaxial structure. The following describes the manufacturing process and structure of the two embodiments of this invention with reference to the drawings.

[0032] Please see Figures 1A to 1CThis is a schematic diagram of the manufacturing process of the first embodiment of this utility model. Figure 1A The image shows a side cross-sectional view of a substrate 10, a first distributed Bragg reflector layer (first DBR layer) 20, and a PN junction element 30. The first distributed Bragg reflector layer 20 and the PN junction element 30 are sequentially stacked on the substrate 10, that is, the first distributed Bragg reflector layer 20 is disposed on the top surface of the substrate 10, and the PN junction element 30 is disposed on the top surface of the first distributed Bragg reflector layer 20.

[0033] Specifically, the first distributed Bragg reflector layer 20 is formed on the top surface of the substrate 10 by epitaxy. The PN junction element 30 includes an N-type layer 31 and a P-type layer 32. The N-type layer 31 and the P-type layer 32 are sequentially stacked on the first distributed Bragg reflector layer 20 by epitaxy, that is, the N-type layer 31 is disposed on the top surface of the first distributed Bragg reflector layer 20, and the P-type layer 32 is disposed on the top surface of the N-type layer 31.

[0034] For example, the substrate 10 may be a gallium arsenide (GaAs) substrate, the PN junction element 30 may be a tunneling diode, and the first distributed Bragg reflector layer 20 may be lightly doped to be an N-type semiconductor. The N-type layer 31 and the P-type layer 32 may be formed by ultra-high doping of N-type gallium arsenide and ultra-high doping of P-type gallium arsenide, respectively. That is, the first distributed Bragg reflector layer 20 is an n-DBR, the N-type layer 31 is n++GaAs, and the P-type layer 32 is p++GaAs.

[0035] Please see Figure 1B and Figure 1B-1 The PN junction element 30 is etched to form a first cavity 33 and at least one second cavity 34. The at least one second cavity 34 is connected to the first cavity 33. Specifically, the PN junction element 30 can be etched by photolithography to simultaneously etch the N-type layer 31 and the P-type layer 32 to form the first cavity 33 and the at least one second cavity 34. The at least one second cavity 34 can be connected to the first cavity 33 by a connector 35. In other words, the first cavity 33, the at least one second cavity 34 and the connector 35 are all formed by the N-type layer 31 and the P-type layer 32. The first cavity 33 and the at least one second cavity 34 are respectively disposed on the top surface of the first distributed Bragg reflector layer 20.

[0036] Furthermore, the N-type layer 31 and the P-type layer 32 have the same shape and size. For example, such as Figure 1B-1As shown, the PN junction element 30, after etching, comprises two rhombuses of the same shape and size. One of these rhombuses is the first cavity 33, and the other is the second cavity 34. A right angle of the first cavity 33 is connected to a right angle of the second cavity 34 via a connector 35, giving the PN junction element 30 an overall bow-tie shape. Please refer to [link / reference]. Figure 1B-2 The first cavity 33 and the second cavity 34 may have different shapes and sizes, making the PN junction element 30 as a whole asymmetrical in shape. This invention does not limit the overall shape of the PN junction element 30. It should be noted that the first cavity 33 is a light-emitting window of the VCSEL structure, and the at least one second cavity 34 is a transverse coupled cavity (TCC).

[0037] Please see Figure 1C A confinement layer 40, an active light-emitting layer 50, a second distributed Bragg reflector layer (second DBR layer) 60, and a current guiding layer 70 are sequentially stacked on the PN junction element 30 and the first distributed Bragg reflector layer 20 via epitaxy. Specifically, the confinement layer 40 is disposed on the top surface of the PN junction element 30 and the first distributed Bragg reflector layer 20, and the confinement layer 40 covers the side of the PN junction element 30. The active light-emitting layer 50 is disposed on the top surface of the confinement layer 40, the second distributed Bragg reflector layer 60 is disposed on the top surface of the active light-emitting layer 50, and the current guiding layer 70 is disposed on the top surface of the second distributed Bragg reflector layer 60.

[0038] For example, the current guiding layer 70 can be a gallium arsenide (GaAs) layer, the confinement layer 40 can be formed by lightly doping p-type gallium arsenide, and the second distributed Bragg reflector layer 60 is also lightly doped and is of the same N-type semiconductor type as the first distributed Bragg reflector layer 20, that is, the confinement layer 40 is p-GaAs, and the second distributed Bragg reflector layer 60 is also an n-DBR.

[0039] Furthermore, the active light-emitting layer 50 may include a P-type space layer 51, an N-type space layer 52, and a multiple quantum well (MQW) layer 53. The P-type space layer 51 is adjacent to the confinement layer 40, the N-type space layer 52 is adjacent to the second distributed Bragg reflector layer 60, and the multiple quantum well layer 53 is disposed between the P-type space layer 51 and the N-type space layer 52. The multiple quantum well layer 53 has multiple quantum wells, which allow holes passing through the P-type space layer 51 and electrons passing through the N-type space layer 52 to combine in the multiple quantum wells of the multiple quantum well layer 53.

[0040] It should be noted that a vertical cavity can be formed between the first distributed Bragg reflector layer 20 and the second distributed Bragg reflector layer 60. When electrons and holes combine in the active light-emitting layer 50, they release energy according to the combination method and the law of conservation of energy to generate photons with corresponding wavelengths or frequencies. The photons can resonate and reflect multiple times in the vertical cavity, and the photons can be randomly absorbed by electrons. The electrons that absorb the photons will enter an excited state and then generate another photon to release energy. Finally, the electrons in the excited state in the vertical cavity will produce stimulated emission of photons to generate laser light.

[0041] Please see Figure 1D Subsequently, the current guiding layer 70, the second distributed Bragg reflector layer 60, the active light-emitting layer 50, and the confinement layer 40 can be etched to form a top structure. The top structure extends from the current guiding layer 70 toward the substrate 10. During the formation of the top structure, the first distributed Bragg reflector layer 20 can also be further etched to increase the overall heat dissipation effect. For example, the top structure can be a mesa pillar, a bowtie-shaped structure, etc., and this utility model is not limited thereto.

[0042] Please see Figure 1E The surface of the cylindrical structure and the top surface of the first distributed Bragg reflector layer 20 are passivated to form a protective layer 80. The protective layer 80 on the top surface of the current guiding layer 70 is etched to form at least one protective layer opening 81 and an upper light-emitting opening TO. In other words, the protective layer 80 is disposed on the top surface of the current guiding layer 70 and exposes part of the current guiding layer 70 to form at least one protective layer opening 81 and the upper light-emitting opening TO. The protective layer 80 surrounds and covers the sides of the cylindrical structure (the sides of the current guiding layer 70, the second distributed Bragg reflector layer 60, the active light-emitting layer 50 and the confinement layer 40). For example, the protective layer 80 can be an insulating material such as silicon nitride (SiN) or silicon dioxide (SiO2). This invention is not limited to these materials.

[0043] Next, metallization is performed on the surface of the protective layer 80, the exposed surface of the current guiding layer 70, and the bottom surface of the substrate 10. This involves forming an upper metal layer 91 that covers the protective layer 80 and fills the at least one protective layer opening 81 to make electrical contact with the current guiding layer 70. The upper metal layer 91 exposes the upper light-emitting opening TO. A lower metal layer 92 is also formed on the bottom surface of the substrate 10. The upper metal layer 91 filled in the at least one protective layer opening 81 can be used to conduct current and serve as a metal contact. The center of the upper light-emitting opening TO corresponds to the center of the cylindrical structure.

[0044] Please see Figure 1F An insulator 100 is formed on the top surface of the current guiding layer 70, and the insulator 100 is disposed in the current guiding layer 70 and the second distributed Bragg reflector layer 60. Specifically, ion implantation is performed on the top surface of the cylindrical structure at the position corresponding to the upward light-emitting opening TO, so that the insulator 100 is formed on the top surface of the current guiding layer 70. The insulator 100 electrically isolates the current guiding layer 70 and the second distributed Bragg reflector layer 60 into a first resonator B1 and a second resonator B2. The position of the first resonator B1 corresponds to the position of the first cavity 33, and the position of the second resonator B2 corresponds to the position of the second cavity 34.

[0045] Please see Figures 2A to 2C This is a schematic diagram of the manufacturing process of the second embodiment of this utility model. Figure 2A The image shows a side cross-sectional view of a substrate 10', a first distributed Bragg reflector layer (first DBR layer) 20', an active light-emitting layer 30', a second distributed Bragg reflector layer (second DBR layer) 40', and a PN junction element 50'. The first distributed Bragg reflector layer 20', the active light-emitting layer 30', the second distributed Bragg reflector layer 40', and the PN junction element 50' are sequentially stacked on the substrate 10' by epitaxy. Specifically, the first distributed Bragg reflector layer 20' is disposed on the top surface of the substrate 10', the active light-emitting layer 30' is disposed on the top surface of the first distributed Bragg reflector layer 20', the second distributed Bragg reflector layer 40' is disposed on the top surface of the active light-emitting layer 30', and the PN junction element 50' is disposed on the top surface of the second distributed Bragg reflector layer 40'.

[0046] The substrate 10' can be a gallium arsenide (GaAs) substrate. The first distributed Bragg reflector layer 20' is lightly doped to be an N-type semiconductor, that is, the first distributed Bragg reflector layer 20' is an n-DBR. The active light-emitting layer 30' also includes an N-type space layer 31', a P-type space layer 32' and a multiple quantum well layer 33'. The difference is that the N-type space layer 31' is adjacent to the first distributed Bragg reflector layer 20', the P-type space layer 32' is adjacent to the second distributed Bragg reflector layer 40', and the multiple quantum well layer 33' is disposed between the N-type space layer 31' and the P-type space layer 32'.

[0047] The second distributed Bragg reflector layer 40' is lightly doped to be a P-type semiconductor, i.e., the second distributed Bragg reflector layer 40' is a p-DBR. The PN junction element 50' also includes a P-type layer 51' and an N-type layer 52'. The P-type layer 51' is disposed on the top surface of the second distributed Bragg reflector layer 40', and the N-type layer 52' ​​is disposed on the top surface of the P-type layer 51'. The P-type layer 51' and the N-type layer 52' ​​are formed by ultra-high doping of P-type gallium arsenide and ultra-high doping of N-type gallium arsenide, respectively. That is, the P-type layer 51' is p++GaAs, and the N-type layer 52' ​​is n++GaAs.

[0048] Please see Figure 2B The PN junction element 30' is etched to form a first cavity 53' and at least one second cavity 54'. The at least one second cavity 54' is connected to the first cavity 53'. Specifically, the PN junction element 30 can be etched by photolithography to simultaneously etch the P-type layer 51' and the N-type layer 52' ​​to form the first cavity 53' and the at least one second cavity 54'. The at least one second cavity 54' can be connected to the first cavity 53' by a connector 55'. In other words, the first cavity 53', the at least one second cavity 54' and the connector 55' are all formed by the P-type layer 51' and the N-type layer 52'. The first cavity 53' and the at least one second cavity 54' are respectively disposed on the top surface of the second distributed Bragg mirror layer 40'.

[0049] As in the first embodiment of this utility model, in this embodiment, the P-type layer 51' and the N-type layer 52' ​​have the same shape and size, and the PN junction element 50' after etching includes two rhombuses of the same shape and size. One of the two rhombuses is the first cavity 53', and the other is the second cavity 54'. The first cavity 53' is a light-emitting window of the VCSEL structure, and the at least one second cavity 54' is a transverse coupled cavity (TCC). The PN junction element 50' is shaped like a bow tie.

[0050] Please see Figure 2C On the PN junction element 50' and the second distributed Bragg reflector layer 40', a confinement layer 60', a third distributed Bragg reflector layer (third DBR layer) 70' and a current guiding layer 80' are sequentially stacked via epitaxy. Specifically, the confinement layer 60' is disposed on the top surface of the PN junction element 50' and the second distributed Bragg reflector layer 40', and the confinement layer 60' covers the sides of the PN junction element 50'. The third distributed Bragg reflector layer 70'... The 0' is disposed on the top surface of the confinement layer 60', and the current guiding layer 80' is disposed on the top surface of the third distributed Bragg reflector layer 70'. For example, the confinement layer 60' can be formed by lightly doping N-type gallium arsenide, and the third distributed Bragg reflector layer 70' is also lightly doped and is the same N-type semiconductor type as the first distributed Bragg reflector layer 20', that is, the confinement layer 40 is n-GaAs, and the third distributed Bragg reflector layer 70' is also n-DBR.

[0051] Please see Figure 2D Subsequently, the current guiding layer 80', the third distributed Bragg reflector layer 70', the confinement layer 60', the second distributed Bragg reflector layer 40', and the active light-emitting layer 30' can be etched to form a top structure. The top structure extends from the current guiding layer 80' towards the substrate 10'. During the formation of the top structure, the first distributed Bragg reflector layer 20' can also be further etched to increase the overall heat dissipation effect.

[0052] As mentioned above, Figure 2D The top structure shown can be a mesa pillar extending from the current guiding layer 80' toward the substrate 10'. During the formation of the mesa pillar, the first distributed Bragg mirror layer 20' can also be further etched to increase the overall heat dissipation effect.

[0053] Please see Figure 2EThe surface of the cylindrical structure and the top surface of the first distributed Bragg reflector layer 20' are passivated to form a protective layer 90'. The protective layer 90' on the top surface of the current guiding layer 80' is etched to form at least one protective layer opening 91' and an upper light-emitting opening TO. In other words, the protective layer 90' is disposed on the top surface of the current guiding layer 80' and exposes part of the current guiding layer 80' to form the at least one protective layer opening 91' and the upper light-emitting opening TO. The protective layer 90' surrounds and covers the side surface of the cylindrical structure ((the current guiding layer 80', the third distributed Bragg reflector layer 70', the confinement layer 60', the second distributed Bragg reflector layer 40', and the active light-emitting layer 30'). For example, the protective layer 90' can be an insulating material such as silicon nitride (SiN) or silicon dioxide (SiO2), but this invention is not limited to this.

[0054] Next, metallization is performed on the surface of the protective layer 90', the exposed surface of the current guiding layer 80', and the bottom surface of the substrate 10'. That is, an upper metal layer 101' is formed to cover the protective layer 90' and fill the at least one protective layer opening 91' and make electrical contact with the current guiding layer 80'. The upper metal layer 101' exposes the upper light-emitting opening TO. A lower metal layer 102' is also formed on the bottom surface of the substrate 10'. The upper metal layer 101' filled in the at least one protective layer opening 91' can be used to conduct current and serve as a metal contact. The center of the upper light-emitting opening TO corresponds to the center of the cylindrical structure.

[0055] Please see Figure 1F An insulator 110' is formed on the top surface of the current guiding layer 80', and the insulator 110' is disposed in the current guiding layer 80', the third distributed Bragg reflector layer 70', the confinement layer 60', the PN junction element 50', and the second distributed Bragg reflector layer 40'. Specifically, ion implantation is performed on the top surface of the cylindrical structure at the position corresponding to the upward light-emitting opening TO, so that the insulator 110' is formed on the top surface of the current guiding layer 80'. The insulator 110' electrically isolates the current guiding layer 80', the third distributed Bragg reflector layer 70', the confinement layer 60', the PN junction element 50', and the second distributed Bragg reflector layer 40' as a first resonator B1' and a second resonator B2'. The first resonator B1' contains the first cavity 53', and the second resonator B2' contains the second cavity 54'.

[0056] In this invention, the photons generated by the active light-emitting layers 50 and 30' can vibrate in the distributed Bragg mirror layers and also form a photon-photon resonance (PPR) effect in the at least one second cavity 34 and 54' of the PN junction elements 30 and 50', thereby improving the modulation bandwidth of the overall VCSEL structure. Furthermore, this invention uses the PN junction elements 30 and 50' and the limiting layers 40 and 60' as current limiting structures. Compared with existing VCSEL structures that use oxides as current limiting structures, the PN junction elements 30 and 50' of this invention can reduce the occurrence of damage and peeling, thereby improving the reliability of the overall VCSEL structure.

[0057] In summary, this description merely illustrates the implementation methods or embodiments of the technical means employed by this utility model to solve the problem, and is not intended to limit the scope of implementation of this utility model patent. That is, all equivalent changes and modifications made in accordance with the wording of this utility model patent application or the scope of this utility model patent are covered by the scope of this utility model patent.

Claims

1. A vertical resonant cavity surface-emitting laser structure with a transversely coupled cavity, characterized in that, Include: One substrate; A first distributed Bragg reflector layer is disposed on the top surface of the substrate; A PN junction element, comprising: A first cavity is disposed on the top surface of the first distributed Bragg mirror layer; and At least one second cavity is disposed on the top surface of the first distributed Bragg reflector layer, and the at least one second cavity is respectively connected to the first cavity; A limiting layer is disposed on the top surface of the PN junction element and the first distributed Bragg reflector layer, and the limiting layer covers the side of the PN junction element; An active light-emitting layer is disposed on the top surface of the limiting layer; A second distributed Bragg reflector layer is disposed on the top surface of the active light-emitting layer; A current guiding layer is disposed on the top surface of the second distributed Bragg reflector layer; as well as An insulator is formed from the top surface of the current guiding layer and disposed in the current guiding layer and the second distributed Bragg reflector layer.

2. The vertical resonant cavity surface-emitting laser structure with a transversely coupled cavity as described in claim 1, characterized in that: The at least one second cavity of the PN junction element is a second cavity, and the insulator electrically isolates the current guiding layer and the second distributed Bragg reflector layer as a first resonator and a second resonator. The position of the first resonator corresponds to the position of the first cavity, and the position of the second resonator corresponds to the position of the second cavity.

3. The vertical resonant cavity surface-emitting laser structure with a transversely coupled cavity as described in claim 1, characterized in that, Further includes: The first distributed Bragg mirror layer and the second distributed Bragg mirror layer are N-type semiconductors; The active light-emitting layer includes: A P-type spatial layer, adjacent to this confined layer; An N-type space layer, adjacent to the second distributed Bragg mirror layer; and A multiple quantum well layer is disposed between the P-type space layer and the N-type space layer.

4. The vertical resonant cavity surface-emitting laser structure with a transversely coupled cavity as described in claim 1, characterized in that, Further includes: A protective layer is disposed on the top surface of the current guiding layer and a portion of the current guiding layer is exposed to form at least one protective layer opening and an upper light-emitting opening; An upper metal layer covers the protective layer and fills at least one opening in the protective layer, making electrical contact with the current guiding layer, and the upper metal layer exposes the upper light-emitting opening; and A metal layer is disposed on the bottom surface of the substrate.

5. The vertical resonant cavity surface-emitting laser structure with a transversely coupled cavity as described in claim 1, characterized in that, The limiting layer is a P-type semiconductor.

6. The vertical resonant cavity surface-emitting laser structure with a transversely coupled cavity as described in claim 1, characterized in that, The PN junction element includes: An N-type layer is disposed on the top surface of the first distributed Bragg mirror layer; and A P-type layer is disposed on the top surface of the N-type layer, and the P-type layer and the N-type layer together form the first cavity and the at least one second cavity.

7. A vertical resonant cavity surface-emitting laser structure with a transversely coupled cavity, characterized in that, Include: One substrate; A first distributed Bragg reflector layer is disposed on the top surface of the substrate; An active light-emitting layer is disposed on the top surface of the first distributed Bragg mirror layer; A second distributed Bragg reflector layer is disposed on the top surface of the active light-emitting layer; A PN junction element, comprising: A first cavity is disposed on the top surface of the second distributed Bragg mirror layer; and At least one second cavity is disposed on the top surface of the second distributed Bragg reflector layer, and the at least one second cavity is respectively connected to the first cavity; A limiting layer is disposed on the top surface of the PN junction element and the second distributed Bragg reflector layer, and the limiting layer covers the side of the PN junction element; A third distributed Bragg mirror layer is disposed on the top surface of the confined layer; A current guiding layer is disposed on the top surface of the third distributed Bragg mirror layer; as well as An insulator is formed from the top surface of the current guiding layer and disposed in the current guiding layer, the third distributed Bragg reflector layer, the confinement layer, the PN junction element, and the second distributed Bragg reflector layer.

8. The vertical resonant cavity surface-emitting laser structure with a transversely coupled cavity as described in claim 7, characterized in that: The at least one second cavity of the PN junction element is a second cavity. The insulator electrically isolates the current guiding layer, the third distributed Bragg reflector layer, the confinement layer, the PN junction element, and the second distributed Bragg reflector layer as a first resonator and a second resonator. The first resonator contains the first cavity, and the second resonator contains the second cavity.

9. The vertical resonant cavity surface-emitting laser structure with a transversely coupled cavity as described in claim 7, characterized in that: The first and third distributed Bragg mirror layers are N-type semiconductors, and the second distributed Bragg mirror layer is a P-type semiconductor. The active light-emitting layer includes: A P-type space layer, adjacent to the second distributed Bragg mirror layer; An N-type space layer, adjacent to the first distributed Bragg mirror layer; and A multiple quantum well layer is disposed between the P-type space layer and the N-type space layer.

10. The vertical resonant cavity surface-emitting laser structure with a transversely coupled cavity as described in claim 7, characterized in that, Further includes: A protective layer is disposed on the top surface of the current guiding layer and a portion of the current guiding layer is exposed to form at least one protective layer opening and an upper light-emitting opening; An upper metal layer covers the protective layer and fills at least one opening in the protective layer, making electrical contact with the current guiding layer, and the upper metal layer exposes the upper light-emitting opening; and A metal layer is disposed on the bottom surface of the substrate.

11. The vertical resonant cavity surface-emitting laser structure with a transversely coupled cavity as described in claim 7, characterized in that, The limiting layer is an N-type semiconductor.

12. The vertical resonant cavity surface-emitting laser structure with a transversely coupled cavity as described in claim 7, characterized in that, The PN junction element includes: A P-type layer is disposed on the top surface of the second distributed Bragg mirror layer; and An N-type layer is disposed on the top surface of the P-type layer, and the N-type layer and the P-type layer together form the first cavity and the at least one second cavity.

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