A gallium nitride crystal growth rotating device
CN224478175UActive Publication Date: 2026-07-10SHANDONG JINGSHENG ELECTRONIC TECH CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- SHANDONG JINGSHENG ELECTRONIC TECH CO LTD
- Filing Date
- 2026-05-27
- Publication Date
- 2026-07-10
AI Technical Summary
Technical Problem
In the prior art, the thickness of crystal material growth equipment is uneven. The vertical surface of the traditional graphite plate and the structure of the rotating device in the prior art crystal material growth equipment result in uneven thickness.
Method used
A gallium nitride crystal growth rotating device is used, which solves the problem of uneven thickness in the growth equipment of the crystal material by means of rotation, through the innovative points of the rotating device and the rotation method.
Benefits of technology
The meshing action of two bevel gears allows the tilted gallium nitride crystal growth device to come into contact with more atmosphere, resulting in a significant improvement in growth speed and thickness.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure CN224478175U_ABST
Abstract
The utility model discloses a gallium nitride crystal growth rotating device, including big skid and small skid, be provided with small skid on big skid, be provided with rotating shaft support frame on small skid, rotating shaft support frame is rotationally installed with rotating shaft, be provided with mounting bracket on big skid, be provided with flange cover on mounting bracket, and the side of flange cover is connected with dynamic sealing device close to rotating shaft support frame, and rotating shaft passes through dynamic sealing device and flange cover and is connected with driving bevel gear, and the one end of rotating shaft driving bevel gear is provided with graphite wafer fixed plate and is inclined, be provided with driven bevel gear with driving bevel gear interlock on graphite wafer fixed plate, the utility model discloses crystal growth speed is fast, and the thickness is even.
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