Bushing assembly, ion implantation device, and semiconductor manufacturing apparatus

Abstract

This utility model relates to the field of semiconductor technology and discloses a bushing assembly, an ion implantation device, and semiconductor manufacturing equipment. The bushing assembly includes a bushing, which includes a main body and side wings connected to the inner edge of the main body. The side wings extend along an axis parallel to the main body, forming a dispersion space between the side wings and the main body. An opening communicating with the dispersion space is provided on the side wings. By providing side wings on the main body and forming a dispersion space between the side wings and the main body, the bushing assembly of this utility model disperses the energy of the ion beam. After the ion beam enters the dispersion space through the opening, its energy is dispersed over a larger surface area, reducing concentrated impact on localized areas. Furthermore, the dispersion space increases the surface area of ​​contact between the ion beam and the bushing, slowing down the accumulation rate of contamination, thereby reducing the risk of unstable extraction energy and bushing cracks caused by contamination.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor technology, and in particular to a bushing assembly, an ion implantation device, and semiconductor manufacturing equipment. Background Technology

[0002] This section provides only background information relevant to this disclosure and is not necessarily prior art.

[0003] In ion implantation processes for semiconductor memories and system-on-a-chip (SoCs), an ion source generates an ion beam using ionized gas, which is then accelerated and focused for implantation into the semiconductor material. To achieve ion extraction and acceleration, the source portion of the ion source needs to be isolated to ensure stable extraction energy. The source bushing is a crucial component for isolating the ion source, preventing arcing and contamination between the ion source and the external environment.

[0004] In existing ion implantation devices, the bushing is easily contaminated by the ion beam during use. This contamination affects the bushing's isolation function, leading to problems such as unstable extraction energy and bushing cracks. Utility Model Content

[0005] The purpose of this invention is to at least solve the problem of bushings being easily contaminated by ion beams. This purpose is achieved through the following technical solution:

[0006] The first aspect of this utility model provides a bushing assembly, comprising:

[0007] The bushing includes a main body and a side wing connected to the inner edge of the main body. The side wing extends along an axis parallel to the main body and forms a dispersion space between the side wing and the main body. The side wing has an opening communicating with the dispersion space.

[0008] The bushing assembly of this invention features side wings on the main body, forming a dispersion space between the side wings and the main body. This space disperses the energy of the ion beam. After the ion beam enters the dispersion space through the opening, its energy is dispersed over a larger surface area, reducing concentrated impact on localized areas. Furthermore, the dispersion space increases the surface area of ​​contact between the ion beam and the bushing, slowing down the accumulation rate of contamination and thus reducing the risk of unstable extraction energy and bushing cracks caused by contamination.

[0009] In addition, the bushing assembly according to this utility model may also have the following additional technical features:

[0010] In some embodiments of this utility model, a protrusion is provided on the main body, the protrusion is arranged around the inner sidewall of the main body and extends radially along the main body.

[0011] In some embodiments of this utility model, the dispersion space is formed between the protrusion and the side wing, and the dispersion space extends along the extension direction of the side wing.

[0012] In some embodiments of this utility model, a first gap exists between the protrusion and the edge of the main body away from the side wing.

[0013] In some embodiments of this utility model, the bushing is a composite material made of alumina and calcium carbonate.

[0014] In some embodiments of the present invention, the bushing assembly further includes a gasket for being disposed between the bushing and the ion source housing.

[0015] In some embodiments of the present invention, the bushing assembly further includes an annular shield, which is mounted on the bushing and at least a portion of the annular shield is radially nested within the bushing.

[0016] In some embodiments of this utility model, a second gap exists between the outer peripheral wall of the annular shield and the inner peripheral wall of the bushing.

[0017] A second aspect of this invention provides an ion implantation apparatus, comprising an ion source and a bushing assembly as described in any of the preceding claims, the bushing assembly being mounted on the ion source.

[0018] A third aspect of this invention provides a semiconductor manufacturing apparatus, including the ion implantation device as described above. Attached Figure Description

[0019] Various other advantages and benefits will become apparent to those skilled in the art upon reading the following detailed description of preferred embodiments. The accompanying drawings are for illustrative purposes only and are not intended to limit the scope of the invention. Furthermore, the same reference numerals denote the same parts throughout the drawings. In the drawings:

[0020] Figure 1 A schematic diagram of the bushing structure according to an embodiment of the present invention is shown.

[0021] The attached figures are labeled as follows:

[0022] 1. Bushing;

[0023] 10. Main body;

[0024] 11. Flanking section;

[0025] 12. Dispersed space;

[0026] 13. Opening;

[0027] 14. Protrusion;

[0028] 15. First gap. Detailed Implementation

[0029] Exemplary embodiments of the present disclosure will now be described in more detail with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be implemented in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.

[0030] It should be understood that the terminology used herein is for the purpose of describing particular exemplary embodiments only and is not intended to be limiting. Unless the context clearly indicates otherwise, the singular forms “a,” “an,” and “described” as used herein may also include the plural forms. The terms “comprising,” “including,” “containing,” and “having” are inclusive and therefore indicate the presence of the stated features, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, steps, operations, elements, components, and / or combinations thereof. The method steps, processes, and operations described herein are not construed as requiring them to be performed in a particular order described or illustrated unless the order of performance is explicitly indicated. It should also be understood that additional or alternative steps may be used.

[0031] Although terms such as first, second, third, etc., may be used in this document to describe multiple elements, components, regions, layers, and / or segments, these elements, components, regions, layers, and / or segments should not be limited by these terms. These terms may be used only to distinguish one element, component, region, layer, or segment from another. Unless the context clearly indicates otherwise, terms such as "first," "second," and other numerical terms used herein do not imply order or sequence. Therefore, the first element, component, region, layer, or segment discussed below may be referred to as the second element, component, region, layer, or segment without departing from the teachings of the exemplary embodiments.

[0032] For ease of description, spatial relative terms may be used in the text to describe the relationship of one element or feature relative to another element or feature, as shown in the figure. These relative terms include, for example, "inside," "outside," "middle," "outer," "below," "below," "above," "over," etc. Such spatial relative terms are intended to include different orientations of the device in use or operation, other than those depicted in the figure. For example, if the device in the figure is flipped, an element described as "below other elements or features" or "below other elements or features" would subsequently be oriented "above other elements or features" or "above other elements or features." Therefore, the example term "below" can include both upper and lower orientations.

[0033] In ion implantation processes for semiconductor memories and system-on-a-chip (SoCs), an ion source generates an ion beam using ionized gas, which is then accelerated and focused for implantation into the semiconductor material. To achieve ion extraction and acceleration, the source portion of the ion source needs to be isolated to ensure stable extraction energy. The source bushing is a crucial component for isolating the ion source, preventing arcing and contamination between the ion source and the external environment.

[0034] In related technologies, the bushing is easily contaminated by the ion beam during use. This contamination affects the bushing's isolation function, leading to problems such as unstable extraction energy and bushing cracks. These problems affect the stability and reliability of the ion implantation process, increasing equipment maintenance costs and downtime.

[0035] In view of this, this embodiment provides a bushing assembly, which aims to solve the above-mentioned technical problems by providing a side wing 11 on the main body 10 of the bushing 1, forming a dispersion space 12 between the side wing 11 and the main body 10, dispersing the energy of the ion beam and increasing the surface area of ​​the ion beam in contact with the bushing 1, slowing down the accumulation rate of contamination, reducing the risk of unstable extraction energy and cracks in the bushing 1 caused by contamination.

[0036] like Figure 1As shown, according to an embodiment of the present invention, a bushing assembly is proposed, including a bushing 1. The bushing 1 includes a main body 10 and a side wing 11 connected to the inner edge of the main body 10. The side wing 11 and the main body 10 are integrally structured to reduce stress concentration at the connection and improve the overall stability and reliability of the structure. The side wing 11 extends along a direction parallel to the axis of the main body 10, and a dispersion space 12 is formed between the side wing 11 and the main body 10. The dispersion space 12 is an annular space surrounding the inner wall of the main body 10. The width of the dispersion space 12 (i.e., the distance between the annular side wing 11 and the main body 10) depends on the energy and current density of the ion beam. A wider dispersion space 12 can provide a better energy dispersion effect. An opening 13 is provided on the side wing 11, which is connected to the dispersion space 12. The opening 13 is used to allow the ion beam to enter the dispersion space 12.

[0037] The bushing assembly of this utility model has a side wing 11 on the main body 10, and a dispersion space 12 is formed between the side wing 11 and the main body 10 to disperse the energy of the ion beam. After the ion beam enters the dispersion space 12 through the opening 13, its energy is dispersed to a larger surface area, reducing the concentrated impact on local areas. In addition, the dispersion space 12 can also increase the surface area of ​​the ion beam in contact with the bushing 1, thereby reducing the rate of contamination accumulation per unit area, slowing down the rate of contamination accumulation, and thus reducing the risk of unstable extraction energy and cracks in the bushing 1 caused by contamination.

[0038] In some embodiments of this utility model, a protrusion 14 is provided on the main body 10. The protrusion 14 is arranged around the inner sidewall of the main body 10 and extends radially along the main body 10. Specifically, the protrusion 14 is a ring structure, which is disposed on the inner sidewall of the main body 10 and surrounds the entire inner circumference of the main body 10. During the manufacturing process of the bushing 1, the protrusion 14 is integrally formed with the main body 10. The integral structure can reduce stress concentration at the connection between the protrusion 14 and the main body 10 and improve the stability of the structure. The protrusion 14 can provide additional mechanical support and enhance the overall structural stability of the bushing 1. Especially under the action of a high-energy ion beam, the protrusion 14 can reduce the deformation and wear of the inner wall of the main body 10, thereby improving the service life of the bushing 1.

[0039] In some embodiments of this invention, a dispersion space 12 is formed between the protrusion 14 and the side wing 11, and the dispersion space 12 extends along the extending direction of the side wing 11. Specifically, the dispersion space 12 extends along the extending direction of the side wing 11 (i.e., parallel to the axis of the main body 10), so that the ion beam can move in the dispersion space 12 along this direction before entering the main body 10, which increases the energy dispersion path of the ion beam. By extending the path of the ion beam in the dispersion space 12, the energy of the ion beam can be more evenly dispersed over a larger surface area. The energy of the ion beam can be more evenly dispersed, reducing the direct impact on the inner wall of the main body 10, reducing the risk of unstable extraction energy and bushing 1 cracks caused by contamination and energy concentration, thereby improving the stability and reliability of the ion implantation process.

[0040] In some embodiments of this utility model, a first gap 15 is provided between the protrusion 14 and the side edge of the main body 10 away from the side wing 11. Specifically, the first gap 15 is located between the protrusion 14 and the side edge of the main body 10 away from the side wing 11. The first gap 15 is annular and surrounds the outer edge of the main body 10. The height of the first gap 15 matches the height of the protrusion 14. The presence of the first gap 15 makes the bushing assembly more flexible during assembly. When the bushing assembly is installed to other components of the ion implantation device (such as the ion source housing or other mechanical components), the first gap 15 can provide a certain space, which facilitates the operation of assembly tools and reduces damage to components during assembly.

[0041] In some embodiments of this invention, the bushing 1 is a composite material made of alumina and calcium carbonate. Alumina and calcium carbonate powders are mixed in a specific ratio, typically using methods such as ball milling and stirring to ensure uniform mixing. The mixed powder is then formed into the shape of the bushing 1 through processes such as pressing or slip casting. The formed bushing 1 requires high-temperature sintering, typically at 1200℃ to 1500℃. During sintering, calcium carbonate decomposes into calcium oxide and reacts with alumina to form stable compounds, such as calcium aluminate. Alumina, as the primary insulating material, provides the high insulation performance required by the bushing 1. The calcium oxide formed from calcium carbonate at high temperatures further enhances the material's insulation performance, ensuring stable operation of the bushing 1 under high-voltage conditions and preventing arcing and electrical breakdown. The high hardness and wear resistance of alumina provide good mechanical properties for the bushing 1, enabling it to withstand mechanical stress and wear. The calcium aluminate formed from calcium carbonate at high temperatures further enhances the material's strength and toughness and has good chemical stability, resisting the chemical environment generated during ion implantation, ensuring the long-term stability of the bushing 1 and improving its service life.

[0042] In some embodiments of this invention, the bushing assembly further includes a gasket, which is disposed between the bushing 1 and the ion source housing. Specifically, the gasket is typically annular, matching the circular contact surfaces of the ion source housing and the bushing 1. The gasket is disposed between the bushing 1 and the ion source housing, usually located on their contact surfaces. In ion implantation devices, the ion source needs to operate in a high vacuum environment, and gas leakage can affect the quality and stability of the ion beam. Therefore, by providing a gasket at the connection between the bushing 1 and the ion source housing, the gap at the connection can be covered to prevent gas leakage. The gasket prevents gas leakage or external contaminants from entering, thereby ensuring the sealing performance between the bushing 1 and the ion source housing.

[0043] In some embodiments of this utility model, the bushing assembly further includes an annular shield, which is mounted on the bushing 1, with at least a portion of the annular shield radially nested within the bushing 1. Specifically, the annular shield is typically annular, matching the inner or outer wall of the bushing 1, and located on the inner side of the bushing 1. The shield is made of a metallic material, such as stainless steel, copper, or aluminum, possessing good electrical conductivity and mechanical strength, as well as certain corrosion resistance and high-temperature resistance. In ion implantation devices, tiny particles generated by the ion beam during operation, or contaminants released from the ion source shell or other components, can cause electric field inhomogeneity and arc risk. By setting a metallic shield, the surface of the metallic shield has a certain adsorption capacity, which can adsorb and accumulate impurities, preventing impurities from directly adhering to the bushing 1. This effectively reduces direct contact between impurities and the surface of the bushing 1, thereby reducing electric field inhomogeneity and arc risk caused by impurities. Furthermore, since the metallic shield can adsorb and accumulate impurities, during periodic maintenance, only the metallic shield needs to be replaced or cleaned, rather than replacing the entire bushing 1, reducing maintenance costs and time. To further enhance adsorption capacity, the surface of the metal shield can undergo special treatments, such as sandblasting, coating, or chemical etching, to increase surface roughness and adsorption area.

[0044] In some embodiments of this invention, a second gap exists between the outer peripheral wall of the annular shield and the inner peripheral wall of the bushing 1. Specifically, the second gap is located between the outer peripheral wall of the annular shield and the inner peripheral wall of the bushing 1, forming a space surrounding the outside of the shield. During mechanical connection, the second gap allows for a certain space between the shield and the bushing 1, thereby reducing direct contact and friction. This buffering effect protects the shield and the bushing 1, extending their service life. In high-temperature environments, materials undergo thermal expansion. The second gap provides sufficient space, allowing for some displacement of the material during thermal expansion, thus reducing stress concentration and component damage caused by thermal expansion. Furthermore, the second gap allows air or other cooling media to flow between the shield and the bushing 1, thereby carrying away heat and effectively reducing the temperature of the shield and the bushing 1, improving the thermal stability of the equipment.

[0045] The second aspect of this invention provides an ion implantation apparatus, comprising an ion source, a mass analysis device, a process chamber, and the aforementioned bushing assembly, the bushing assembly being mounted on the ion source. The ion source generates ions using an ionizing gas (such as a dopant gas like arsenic or phosphorus) and accelerates these ions to form an ion beam. The bushing assembly, mounted on the ion source, isolates the high-voltage region inside the ion source, preventing arcing and electrical breakdown, while also providing mechanical support and sealing performance. It is used to filter out the desired ions, ensuring that only ions of a specific mass can enter the accelerating tube. The process chamber includes a vacuum chamber and a wafer stage for accommodating the wafer and providing a stable vacuum environment.

[0046] During ion implantation, the ionization chamber inside the ion source generates ions through ionization of gases (such as doped gases like arsenic and phosphorus). Accelerating electrodes accelerate these ions, forming an ion beam. The ion beam extraction system extracts the ion beam from the ion source and guides it into the mass analyzer. The mass analyzer separates ions of different masses using magnetic or electric fields, allowing ions of a specific mass to enter the accelerating tube. Multiple accelerating electrodes in the accelerating tube progressively accelerate the ion beam to the required energy. The scanning system controls the scanning path of the ion beam, ensuring it is uniformly implanted onto the wafer surface. The ion beam then enters the process cavity, implanting into the wafer and altering its electrical properties.

[0047] A third aspect of this invention provides a semiconductor manufacturing apparatus, including the aforementioned ion implantation device. The semiconductor manufacturing apparatus of this invention includes an ion implantation device, which includes a bushing assembly. The bushing assembly includes a main body 10 and a side wing 11 connected to the main body 10. A dispersion space 12 is formed between the side wing 11 and the main body 10 to disperse the energy of the ion beam. After the ion beam enters the dispersion space 12 through the opening 13, its energy is dispersed over a larger surface area, reducing concentrated impact on local areas. Furthermore, the dispersion space 12 increases the surface area of ​​contact between the ion beam and the bushing 1, slowing down the accumulation rate of contamination, thereby reducing the risk of unstable extraction energy and bushing 1 cracks caused by contamination.

[0048] The above description is merely a preferred embodiment of this utility model, but the protection scope of this utility model is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in this utility model should be included within the protection scope of this utility model. Therefore, the protection scope of this utility model should be determined by the scope of the claims.

Claims

1. A bushing assembly, characterized in that, include: The bushing includes a main body and a side wing connected to the inner edge of the main body. The side wing extends along an axis parallel to the main body and forms a dispersion space between the side wing and the main body. The side wing has an opening communicating with the dispersion space.

2. The bushing assembly according to claim 1, characterized in that, The main body is provided with a protrusion, which is arranged around the inner sidewall of the main body and extends radially along the main body.

3. The bushing assembly according to claim 2, characterized in that, The protrusion and the side wing form the dispersion space, which extends along the extension direction of the side wing.

4. The bushing assembly according to claim 2, characterized in that, There is a first gap between the protrusion and the edge of the main body away from the side wing.

5. The bushing assembly according to any one of claims 1 to 4, characterized in that, The bushing is a composite material made of alumina and calcium carbonate.

6. The bushing assembly according to any one of claims 1 to 4, characterized in that, The bushing assembly also includes a gasket for placement between the bushing and the ion source housing.

7. The bushing assembly according to any one of claims 1 to 4, characterized in that, The bushing assembly further includes an annular shield mounted on the bushing, at least a portion of which is radially nested within the bushing.

8. The bushing assembly according to claim 7, characterized in that, There is a second gap between the outer peripheral wall of the annular shield and the inner peripheral wall of the bushing.

9. An ion implantation device, characterized in that, It includes an ion source and a bushing assembly as described in any one of claims 1 to 8, the bushing assembly being mounted on the ion source.

10. A semiconductor manufacturing apparatus, characterized in that, Includes the ion implantation device as described in claim 9.

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