A clamp type silicon wafer wet depth anisotropic etching apparatus

Abstract

The utility model discloses a kind of clamp type silicon wafer wet depth anisotropic etching equipment, including body, the body inside one side vertical direction is equipped with etching box, the etching box inside near inner wall four sides position are equipped with the wafer sealing clamp for wafer positioning, and wafer sealing clamp top is uniformly equipped with positive pressure gas supply system, equipment overall volume is smaller, mobile convenient, reduce more than 90% organic solvent use, replace traditional adhesive by clamp sealing, internal circulation heating+real-time temperature feedback makes etching uniformity improve 30%, integrated design supports 24 hours continuous operation, failure rate reduces 40%.

Description

Technical Field

[0001] This utility model relates to the field of wafer processing technology, and in particular to a fixture-type wet deep anisotropic etching device for silicon wafers. Background Technology

[0002] A wafer is a silicon wafer used to manufacture silicon semiconductor circuits. Its raw material is silicon. High-purity polycrystalline silicon is dissolved and mixed with silicon crystal seed crystals. Then it is slowly pulled out to form a cylindrical single crystal silicon. After grinding, polishing and slicing, the silicon crystal rod is formed into a silicon wafer, which is a widely used extrusion material for manufacturing semiconductor materials. Its production process requires wet etching treatment.

[0003] Existing wet etching processes for wafer fabrication have the following drawbacks: traditional wet etching processes require adhesive to protect the front side of the wafer, resulting in significant organic solvent pollution and cumbersome procedures. Existing equipment mostly uses external circulation temperature control, which lacks sufficient temperature control accuracy and an integrated fixture system. In addition, the overall size of the equipment is relatively large. Therefore, we propose a fixture-type wet deep anisotropic etching equipment for silicon wafers. Utility Model Content

[0004] The main objective of this invention is to provide a clamp-type wet deep anisotropic etching equipment for silicon wafers, and an integrated, environmentally friendly, efficient, and precisely temperature-controlled silicon wafer wet etching equipment suitable for clamps. It is compact in size, easy to transport, and effectively solves the problems in the prior art.

[0005] To achieve the above objectives, the technical solution adopted by this utility model is as follows:

[0006] A clamp-type wet deep anisotropic etching equipment for silicon wafers includes a body, an etching chamber vertically installed on one side of the body, wafer sealing clamps for wafer positioning are installed on all four sides of the etching chamber near the inner wall, and a positive pressure gas supply system is provided on the top of each wafer sealing clamp, a heating module is inserted into the etching chamber, and a temperature monitoring module is integrated into the inner wall of the etching chamber.

[0007] Furthermore, a cover plate is movably connected to the top of the corrosion chamber; the opening and closing of the top of the corrosion chamber is controlled by the cover plate.

[0008] Furthermore, a liquid stirring and circulation module is provided at the bottom of the corrosion tank; the liquid stirring and circulation module uses a magnetic stirring motor as a power device to stir the liquid inside the corrosion tank during operation and accelerate its flow.

[0009] Furthermore, a liquid level monitoring module is provided on one side of the inner wall of the corrosion tank; the liquid level monitoring module can monitor the liquid level inside the corrosion tank in real time.

[0010] Furthermore, an intelligent control module is installed on the side of the machine body. The control terminal of the heating module, the communication terminal of the temperature monitoring module, the control terminal of the liquid stirring and circulation module, and the communication terminal of the liquid level monitoring module are all connected to the intelligent control module. The intelligent control module presets the program and receives feedback signals from each sensing component, while regulating the operation of each component.

[0011] Compared with existing technologies, this utility model has the following advantages: The machine body has a built-in high-purity PP etching chamber, the size of which is customized according to the specifications of the wafers to be processed. The inner wall of the etching chamber integrates a temperature monitoring module and a liquid level monitoring module. The heating module uses an internal circulation heating module with PID closed-loop control, achieving a temperature control accuracy of ±0.5℃. A wafer sealing clamp installed on the inner wall of the etching chamber can simultaneously fix four wafers, and a positive pressure gas supply system prevents leakage. A liquid circulation stirring module rotates and refluxes the liquid within the etching chamber to achieve uniform flow of the etching solution. The intelligent control system uses a PLC control component. During operation, the wafers to be processed are loaded into the etching chamber... Inside the circular sealing fixture, the KOH etching process is set in the intelligent control module. After startup, the heating module's PID system automatically adjusts the heating power, the temperature monitoring module monitors internal temperature changes in real time, and the liquid level monitoring module monitors the liquid level in real time. When the liquid level is below the warning value, an audible and visual alarm is triggered and heating stops. After the etching process is completed, the wafer is directly cleaned, dried, and removed from the fixture without the need for adhesive removal. The overall size of the equipment is smaller and easier to move, reducing the use of organic solvents by more than 90%. The fixture seal replaces traditional adhesive, and the internal circulation heating + real-time temperature feedback improves the etching uniformity by 30%. The integrated design supports 24-hour continuous operation and reduces the failure rate by 40%. Attached Figure Description

[0012] Figure 1 This is a schematic diagram of the overall structure of a clamp-type wet deep anisotropic etching equipment for silicon wafers according to this utility model.

[0013] Figure 2 This is a schematic diagram of the corrosion chamber structure of a clamp-type wet deep anisotropic etching equipment for silicon wafers according to this utility model.

[0014] Figure 3 This is a schematic diagram of the internal structure of a clamp-type wet deep anisotropic etching equipment for silicon wafers according to this utility model.

[0015] Figure 4 This is a schematic diagram of the internal structure of the corrosion chamber of a clamp-type wet deep anisotropic etching equipment for silicon wafers according to this utility model.

[0016] Figure 5 This invention relates to a control system diagram for a clamp-type wet deep anisotropic etching equipment for silicon wafers.

[0017] Figure 6 This utility model presents a process flow diagram of the corrosion system for a clamp-type wet deep anisotropic etching equipment for silicon wafers.

[0018] In the diagram: 1. Main body; 2. Etching chamber; 3. Cover plate; 4. Wafer sealing fixture; 5. Heating module; 6. Temperature monitoring module; 7. Liquid stirring and circulation module; 8. Intelligent control module; 9. Liquid level monitoring module. Detailed Implementation

[0019] To make the technical means, creative features, objectives and effects of this utility model easier to understand, the present utility model will be further described below in conjunction with specific embodiments.

[0020] like Figure 1-6 As shown, a clamp-type wet deep anisotropic etching equipment for silicon wafers includes a body 1. An etching chamber 2 is vertically installed on one side of the body 1. Wafer sealing clamps 4 for wafer positioning are installed on all four sides of the etching chamber 2 near the inner wall, and a positive pressure gas supply system is provided on the top of each wafer sealing clamp 4. A heating module 5 is inserted into the etching chamber 2, and a temperature monitoring module 6 is integrated into the inner wall of the etching chamber 2.

[0021] The top of the corrosion chamber 2 is movably connected to a cover plate 3; the opening and closing of the top of the corrosion chamber 2 is controlled by the cover plate 3.

[0022] The corrosion chamber 2 is equipped with a liquid stirring and circulation module 7 at the bottom and a liquid level monitoring module 9 on one side of the inner wall of the corrosion chamber 2. The liquid stirring and circulation module 7 uses a magnetic stirring motor as a power device to stir the liquid inside the corrosion chamber 2 during operation and accelerate its flow. The liquid level monitoring module 9 can monitor the liquid level inside the corrosion chamber 2 in real time.

[0023] The machine body 1 is equipped with an intelligent control module 8 on its side. The control terminal of the heating module 5, the communication terminal of the temperature monitoring module 6, the control terminal of the liquid stirring and circulation module 7, and the communication terminal of the liquid level monitoring module 9 are all connected to the intelligent control module 8. The intelligent control module 8 can preset programs and receive feedback signals from each sensing component, while regulating the operation of each component.

[0024] It should be noted that this utility model is a clamp-type wet deep anisotropic etching equipment for silicon wafers. During use, the machine body 1 contains a high-purity PP etching chamber 2. The size of the etching chamber 2 is customized according to the specifications of the wafers to be processed. The inner wall of the etching chamber 2 integrates a temperature monitoring module 6 and a liquid level monitoring module 9. The heating module 5 is an internal circulation heating module with PID closed-loop control, achieving a temperature control accuracy of ±0.5℃. A wafer sealing clamp 4, located on the inner wall of the etching chamber 2, can simultaneously fix four wafers. A positive pressure gas supply system is also included to prevent leakage. A liquid circulation stirring module rotates and refluxes the liquid within the etching chamber 2 to achieve uniform flow of the etching solution. The intelligent control system uses a PLC control component. The wafer to be processed is loaded into the wafer sealing fixture 4. The KOH etching process is set in the intelligent control module 8. After startup, the PID system of the heating module 5 automatically adjusts the heating power. The temperature monitoring module 6 monitors the internal temperature changes in real time, and the liquid level monitoring module 9 monitors the liquid level in real time. When the liquid level is lower than the warning value, an audible and visual alarm is triggered and heating is stopped. After the etching process is completed, the wafer is directly cleaned, dried, and removed from the fixture. No adhesive removal is required. The overall size of the equipment is smaller and easier to move. It reduces the use of organic solvents by more than 90%. The fixture seal replaces the traditional adhesive. The internal circulation heating and real-time temperature feedback improve the etching uniformity by 30%. The integrated design supports 24-hour continuous operation and reduces the failure rate by 40%.

[0025] The foregoing has shown and described the basic principles, main features, and advantages of this utility model. Those skilled in the art should understand that this utility model is not limited to the above embodiments. The embodiments and descriptions in the specification are merely illustrative of the principles of this utility model. Various changes and modifications can be made to this utility model without departing from its spirit and scope, and all such changes and modifications fall within the scope of the claims. The scope of protection of this utility model is defined by the appended claims and their equivalents.

Claims

1. A clamp-type wet deep anisotropic etching device for silicon wafers, comprising a body (1), characterized in that, The body (1) has a vertically installed etching chamber (2) on one side. The etching chamber (2) has wafer sealing fixtures (4) for wafer positioning installed on all four sides near the inner wall. The top of each wafer sealing fixture (4) is equipped with a positive pressure gas supply system. The etching chamber (2) has a heating module (5) inserted inside. The inner wall of the etching chamber (2) has a temperature monitoring module (6) integrated.

2. The clamp-type wet deep anisotropic etching equipment for silicon wafers according to claim 1, characterized in that: The top of the corrosion chamber (2) is movably connected to a cover plate (3).

3. The clamp-type wet deep anisotropic etching equipment for silicon wafers according to claim 1, characterized in that: The bottom of the corrosion chamber (2) is equipped with a liquid stirring and circulation module (7).

4. The clamp-type wet deep anisotropic etching equipment for silicon wafers according to claim 1, characterized in that: A liquid level monitoring module (9) is installed on one side of the inner wall of the corrosion tank (2).

5. The clamp-type wet deep anisotropic etching equipment for silicon wafers according to claim 1, characterized in that: The machine body (1) is equipped with an intelligent control module (8) on its side. The control terminal of the heating module (5), the communication terminal of the temperature monitoring module (6), the control terminal of the liquid stirring and circulation module (7), and the communication terminal of the liquid level monitoring module (9) are all connected to the intelligent control module (8).

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