A semiconductor inspection light source of a dual view field dual layer light source

CN224694410UActive Publication Date: 2026-08-28东莞康视达自动化科技有限公司
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Patent Information

Application Number
CN202521851342.4
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2025-08-28
Publication Date
2026-08-28
Estimated Expiration
2035-08-28

AI Technical Summary

Technical Problem

[0009]因此,单视场单光源成像的半导体检测光源存在检测效率低的缺陷;

Benefits of technology

[0028]1、本实用新型设置有双开口底板->第一双开口光源模组->双开口漫射结构->第二双开口光源模组->双开口偏振板,本实用新型形成了双视场双层光源,该双视场双层光源在半导体一次检测过程中,即可完成对两个芯片分别进行明场、暗场检测,检测效率较高。

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Abstract

The utility model discloses a semiconductor detection light source of double view field double -layer light source, including main shell, the inside of main shell is equipped with double -open bottom plate, and the one end of double -open bottom plate is equipped with first double -open light source module, and the one end perimeter of one opening of first double -open light source module has a plurality of first LED lamp pearl, and the one end perimeter of another opening has second LED lamp pearl, and the one end of first double -open light source module is equipped with double -open diffusion structure, and the one opening of double -open diffusion structure is equipped with first special diffusion structure, and another opening is equipped with second special diffusion structure, and the one end of double -open diffusion structure is equipped with second double -open light source module, and the one end perimeter of one opening of second double -open light source module has a plurality of third LED lamp pearl, and the one end perimeter of another opening has fourth LED lamp pearl, and the one end of second double -open light source module is equipped with double -open polarizing plate, and it is to two chips respectively to carry out bright field, dark field detection once, and the detection efficiency is high, and the detection precision is high, and the space occupancy is high.
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