Deposition apparatus

Abstract

The utility model provides a deposition device. The deposition device includes a deposition chamber, provides internal space, a deposition source is provided in the internal space, a plate is provided in the internal space and can rotate, a plurality of magnet patterns are arranged on the front surface of the plate, and a plurality of masks are arranged between the plate and the deposition source. The plate includes a rotatable center plate, a first plate combined with one side of the center plate, and a second plate combined with the other side of the center plate opposite to the one side. The plate is changed to a first mode or a second mode by rotation. The first plate in the first mode and the first plate in the second mode include magnet patterns with different arrangements.

Description

Technical Field

[0001] This utility model relates to a deposition apparatus, and more specifically, to a deposition apparatus using a metal mask. Background Technology

[0002] Recently, with the development of display technology, it is now being applied not only to small electronic products but also to large electronic products. For these displays, various devices such as organic light-emitting diodes (OLEDs), liquid crystal displays (LCDs), and plasma displays are mainly used.

[0003] To manufacture displays, a deposition process is used to vaporize materials such as metals to form thin films. Deposition processes can be primarily used to form thin-film transistors or circuits, or to form components such as the light-emitting layer of a display. To perform the thin-film deposition process, a mask is arranged on a substrate with openings corresponding to the areas where the thin film will be formed. Then, the material to be deposited onto the substrate is vaporized in a vacuum atmosphere.

[0004] At this point, if the mask moves or is not securely fixed, material may deposit in areas where it should not form. In this case, circuitry may form in areas where circuitry should not be formed, or defects such as misalignment may occur due to errors in the deposited area with subsequent processes. Utility Model Content

[0005] The purpose of this invention is to provide a deposition apparatus that can uniformly apply magnetic force to a mask to stabilize the bond between the substrate and the mask.

[0006] A deposition apparatus according to an embodiment of the present invention includes: a deposition chamber providing an internal space; a deposition source provided in the internal space; a plate provided in the internal space and rotatable; a plurality of magnetic patterns arranged in n rows and m columns on the front surface of the plate, where n and m are positive integers greater than or equal to 1; and a plurality of masks disposed between the plate and the deposition source and fixed by means of the magnetic patterns, wherein the plate includes: a central plate having magnetic patterns of a central group of the plurality of magnetic patterns disposed thereon and rotatable; a first plate having magnetic patterns of a first group of the plurality of magnetic patterns disposed thereon; and a second plate having magnetic patterns of a second group of the plurality of magnetic patterns disposed thereon, the first plate and the second plate being located on one side and the other side of the central plate in a first direction, the plate being rotated to change to a first mode or a second mode, the first plate in the first mode and the first plate in the second mode comprising magnetic patterns having different arrangements from each other.

[0007] The center plate can be rotated 90 degrees clockwise or counterclockwise to change to the first mode or the second mode.

[0008] In the first mode, the masks can be arranged along the first direction, and each of the magnet patterns can face a magnet pattern having the same polarity as each other in the first direction, and face a magnet pattern having different polarities as each other in a second direction intersecting the first direction.

[0009] In the first mode, at least one of the masks may overlap with only one of the center plate, the first plate, and the second plate.

[0010] In the second mode, the masks can be arranged along the second direction, and each of the magnet patterns can face a magnet pattern having the same polarity as each other in the second direction, and face a magnet pattern having different polarities as each other in the first direction.

[0011] In the second mode, at least one of the masks may overlap with the center plate, the first plate, and the second plate.

[0012] The m can be less than the n.

[0013] The center plate may have an N-sided shape, and the center plate may be rotated 360 / N degrees clockwise or counterclockwise from the first mode to change to the second mode.

[0014] The central plate may be square, and the first plate and the second plate may each be rectangular.

[0015] Each of the masks may be a fine metal mask (FMM).

[0016] A deposition apparatus according to an embodiment of the present invention may further include: a connecting portion for connecting the central plate to the first plate or connecting the central plate to the second plate, wherein the first plate or the second plate is detachable from the connecting portion.

[0017] A deposition apparatus according to an embodiment of the present invention may include: a deposition chamber providing an internal space; a deposition source provided in the internal space; a plurality of masks arranged apart from the deposition source and aligned along a direction; and a mask fixing part capable of rotating in a clockwise or counterclockwise direction on a plane and fixing the masks, wherein the mask fixing part may include: a plate provided in the internal space and rotatable; and a plurality of first magnet patterns and a plurality of second magnet patterns arranged on the plate, each of the first magnet patterns having a first magnetism, each of the second magnet patterns having a second magnetism different from the first magnetism and being separated from the first magnet pattern, wherein the first magnet patterns may be arranged along a cross direction intersecting the direction, the second magnet patterns may be arranged along the cross direction, and the first magnet patterns and the second magnet patterns may be arranged alternately along the direction.

[0018] The deposition chamber includes a bottom surface defined by a first direction and a second direction that intersect each other. The mask fixing part can be converted into a first mode or a second mode by rotation. In the first mode, the first direction can be parallel to the first direction, and in the second mode, the first direction can be parallel to the second direction.

[0019] The plate may include: a center plate that is rotatable; a first plate and a second plate arranged between the center plate and spaced apart from each other, wherein the center plate can be rotated clockwise or counterclockwise to switch to the first mode or the second mode.

[0020] The first plate may include a first group of magnetic patterns with different polarities arranged along the second direction in the first mode, and may include a first group of magnetic patterns with different polarities arranged along the first direction in the second mode.

[0021] The first plate and the second plate can be detached from the center plate.

[0022] The rotation angle difference between the first mode and the second mode can be 90 degrees.

[0023] The magnetic pattern arranged on the central plate can be arranged in rows and columns a, where a can be a positive integer greater than or equal to 1.

[0024] The magnet pattern can be arranged in an n-row m-column matrix shape, where the n rows can be defined in one direction and the m columns can be defined in the intersecting direction, and n and m can be positive integers greater than 1.

[0025] The n can be less than the m.

[0026] According to this invention, a deposition apparatus capable of stably fixing a mask can be provided. Attached Figure Description

[0027] Figure 1 This is a diagram illustrating a deposition apparatus according to an embodiment of the present invention.

[0028] Figure 2a This is a perspective view of a mask according to an embodiment of the present invention.

[0029] Figure 2b It is a perspective view showing the arrangement of multiple masks and substrates.

[0030] Figure 2c It is shown Figure 2b The diagram shows a partial area.

[0031] Figure 3a and Figure 3b This is a cross-sectional view showing a portion of the steps in a method for manufacturing a display device according to an embodiment of the present invention.

[0032] Figure 3c This is a cross-sectional view of a display panel according to an embodiment of the present invention.

[0033] Figure 4a This is a perspective view showing a mask fixing part according to an embodiment of the present invention.

[0034] Figure 4b yes Figure 4a An exploded perspective view of the mask fixing part is shown.

[0035] Figure 4c yes Figure 4a The back view of the mask fixing part is shown.

[0036] Figure 5a This is a perspective view showing a mask fixing part according to an embodiment of the present invention.

[0037] Figure 5b yes Figure 5a An exploded perspective view of the mask fixing part is shown.

[0038] Figure 5c yes Figure 5a The back view of the mask fixing part is shown.

[0039] Figure 6a This is a magnet pattern according to a comparative embodiment of the present invention.

[0040] Figure 6b It shows about Figure 6a The graph shows the distribution of magnetic force at the location of the magnet pattern.

[0041] Figure 7a This is a magnet pattern according to an embodiment of the present invention.

[0042] Figure 7b and Figure 7c It shows about Figure 7a The graph shows the distribution of magnetic force at the location of the magnet pattern.

[0043] Explanation of reference numerals in the attached figures DAP: Deposition apparatus; MKF: Mask fixing unit MGN: Magnet Pattern YKP: Plate MSK: Mask; P0: Center Plate P1: First board P2: Second board M1: First magnet pattern M2: Second magnet pattern Detailed Implementation

[0044] In this specification, when a component (or region, layer, part, etc.) is referred to as being “on”, “connected to”, or “integrated into” another component, it means that it can be directly arranged on / connected to / integrated into the other component, or that a third component can be arranged between them.

[0045] The same reference numerals refer to the same constituent elements. Furthermore, in the drawings, the thickness, proportions, and dimensions of the constituent elements are exaggerated for the purpose of effectively illustrating the technical content.

[0046] "And / or" includes all combinations of more than one that can be defined in relation to the associated composition.

[0047] The terms "first," "second," etc., can be used to describe various constituent elements, but the constituent elements are not limited to those terms. These terms are used only to distinguish one constituent element from another. For example, without departing from the scope of this utility model, a first constituent element can be named a second constituent element, and similarly, a second constituent element can be named a first constituent element. Unless the context clearly distinguishes otherwise, singular expressions also include plural expressions.

[0048] Furthermore, terms such as "below," "under," "above," and "on top" are used to describe the relationships between the components shown in the accompanying drawings. These terms are relative concepts and are described based on the directions shown in the accompanying drawings.

[0049] Unless otherwise defined, all terms used in this specification (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. Furthermore, terms such as those defined in common dictionaries shall be interpreted as having the same meaning as they have in the context of the relevant field, and shall not be construed as having an idealized or overly formal meaning unless expressly defined herein.

[0050] Terms such as “including” or “having” should be understood as specifying the presence of features, figures, steps, operations, constituent elements, components, or combinations thereof described in the specification, rather than precluding the presence or additional possibility of one or more other features or figures, steps, operations, constituent elements, components, or combinations thereof.

[0051] The embodiments of this utility model will now be described with reference to the accompanying drawings.

[0052] Figure 1 This is a diagram illustrating a deposition apparatus according to an embodiment of the present invention. The deposition apparatus DPA includes a deposition chamber CMB, a deposition material supply unit TRY, a mask fixing unit MKF, and a substrate fixing unit CLP.

[0053] The deposition chamber CMB provides a predetermined internal space SPC. The internal space SPC can be a cylindrical shape having a bottom surface parallel to a plane defined by a first direction DR1 and a second direction DR2, and a height defined by a third direction DR3. The deposition material supply unit TRY, the mask fixing unit MKF, and the substrate fixing unit CLP are provided in the internal space SPC.

[0054] During the deposition process, the internal space SPC can be in a vacuum state. The vacuum state can be a near-vacuum state, or it can be a state in which inert gas is injected inside to reduce the pressure difference with the outside of the deposition chamber CMB, but is not limited to one embodiment.

[0055] A deposition material SRS is provided in the deposition material supply section (or deposition source) TRY. During the deposition process, the deposition material SRS is vaporized and supplied to the internal space SPC. The deposition material SRS can include various substances capable of forming a thin film, such as metals, metal oxides, and organic matter. In this embodiment, the case where the deposition material SRS is an organic material is illustrated by way of example.

[0056] The substrate fixing portion CLP includes a surface on which a substrate SUB is disposed. A mask MSK may be disposed on the substrate SUB. That is, one surface of the substrate SUB may face the substrate fixing portion CLP, and the other surface opposite to the first surface may face the mask MSK and the deposited material SRS. The deposited material SRS may be vaporized and deposited onto the other surface of the substrate SUB through the mask MSK.

[0057] The mask fixing part MKF may include multiple magnetic patterns MGN and a substrate YKP. The magnetic patterns MGN may be arranged between the substrate YKP and the substrate fixing part CLP. The magnetic patterns MGN may have sufficient magnetic force to pass through the substrate fixing part CLP and the substrate SUB to reach the mask MSK. The mask fixing part MKF can fix the mask MSK, and the mask MSK can be in close contact with the substrate SUB.

[0058] The plate YKP can be integrated with the top plate of the deposition chamber CMB, but this is shown exemplarily. The plate YKP can also be integrated with a separate structure and supported, and is not limited to one embodiment. The plate YKP can rotate in a plane defined by a first direction DR1 and a second direction DR2. Specifically, the axis of rotation of the plate YKP can be perpendicular to the bottom surface of the deposition chamber CMB. By rotating the plate YKP, multiple magnet patterns MGN can rotate in the plane. The rotation of the magnet patterns MGN can be substantially controlled by the plate YKP. A detailed description of this will follow.

[0059] According to the present invention, a rotatable mask fixing part MKF is provided, so that even if the arrangement or design of the mask MSK changes according to the size or arrangement of the substrate, the mask fixing part MKF can stably fix the mask MSK.

[0060] Figure 2a This is a perspective view of a mask according to an embodiment of the present invention. Figure 2b It is a perspective view showing the arrangement of multiple masks and substrates. Figure 2c It is shown Figure 2b The plan view of the local area is shown below. Refer to the following... Figures 2a to 2c This utility model will now be described.

[0061] like Figure 2a As shown, each mask MSK can be a metal mask, specifically a fine metal mask (FMM). A mask MSK can include a plurality of cell regions CA arranged along a first direction D1. In this embodiment, four cell regions CA are shown arranged spaced apart from each other. However, this is an exemplary illustration, and the mask MSK can also include a greater number of cell regions CA, and the cell regions CA can also be arranged along a second direction D2 intersecting the first direction D1, and is not limited to one embodiment.

[0062] Multiple through-sections OP can be defined in each unit region CA. The through-sections OP can be arranged apart from each other along the first direction D1 and the second direction D2. Each through-section OP can be defined to penetrate the metal mask MSK along the thickness direction D3 (hereinafter, the third direction).

[0063] like Figure 2b and Figure 2c As shown, a mask MSK is arranged on the substrate SUB. In this embodiment, the mask MSK is provided as a plurality of them arranged along the second direction D2, but it is not limited thereto and may also be provided as a single one.

[0064] Additionally, in this embodiment, a support platform SP may be arranged between the mask MSK and the substrate SUB. The support platform SP can be provided with a frame shape to expose at least a portion of the substrate SUB. The mask MSK can be provided integrally with the support platform SP.

[0065] A portion of the substrate SUB exposed by the support stage SP can overlap with the cell region CA of each mask MSK, which has a through-hole OP. (See reference...) Figure 2c This shows the arrangement of the through-section OP in the magnified XX' region, spaced apart from each other along the first direction D1 and the second direction D2.

[0066] In this embodiment, the support platform SP prevents direct contact between the mask MSK and the substrate SUB. Therefore, damage to the substrate SUB due to contact with the mask MSK can be prevented. However, this is an exemplary illustration; in the manufacturing method of the display panel according to an embodiment of the present invention, the support platform SP may be omitted, and the mask MSK may be directly disposed on the substrate SUB, and the invention is not limited to one embodiment.

[0067] Figure 3a and Figure 3b This is a cross-sectional view showing a portion of the steps in a method for manufacturing a display device according to an embodiment of the present invention. Figure 3a The steps of providing the mask MSK to the substrate SUB are illustrated. Figure 3b The sedimentary material SRS (reference) is shown. Figure 1 The step of depositing the material onto the substrate SUB. That is, Figure 3a The mask MSK can be provided to the deposition apparatus DPA (see reference). Figure 1 The corresponding state of ) Figure 3b This corresponds to the state shown where a deposition pattern has been formed in the deposition apparatus DPA. See below for reference. Figure 3a and Figure 3b This utility model will now be described.

[0068] Reference Figure 3aThe substrate SUB can be in a state where a transistor TR, multiple insulating layers 10, 20, 30, 40, and a lower electrode E1 are formed on the substrate layer BS. The substrate layer BS can include a plastic substrate, a glass substrate, a metal substrate, etc. The plastic substrate includes resin. For example, the substrate layer BS can include at least one of acrylic resin, methacrylic resin, polyisoprene resin, vinyl resin, epoxy resin, urethane resin, cellulose resin, siloxane resin, polyimide resin, polyamide resin, and perylene resin.

[0069] Transistors TR are disposed on the substrate layer BS. Multiple transistors TR are provided and disposed in the through-section OP. In this embodiment, for ease of explanation, one transistor TR disposed in one through-section OP is shown. However, this is an exemplary illustration, and multiple transistors TR overlapping one through-section OP may be provided, and the embodiment is not limited to one specific embodiment.

[0070] A transistor TR includes a semiconductor pattern AL, a control electrode CE, an input electrode IE, and an output electrode OE. The semiconductor pattern AL may contain a semiconductor material. For example, the semiconductor pattern AL may contain silicon resin or metal oxide.

[0071] A control electrode CE is disposed on the first insulating layer 10. The control electrode CE may be disposed overlapping the semiconductor pattern AL in a plane and spaced apart in a cross-section. The control electrode CE places the first insulating layer 10 between itself and the semiconductor pattern AL, thereby separating the control electrode CE from the semiconductor pattern AL. However, this is an exemplary illustration; in a transistor TR according to one embodiment of the present invention, the semiconductor pattern AL may also be disposed on the control electrode CE, and the invention is not limited to one embodiment.

[0072] The input electrode IE and the output electrode OE are disposed on the second insulating layer 20. The input electrode IE and the output electrode OE can be disposed apart from each other in a plane. The input electrode IE and the output electrode OE can respectively penetrate the first insulating layer 10 and the second insulating layer 20 to be connected to the semiconductor pattern AL.

[0073] Furthermore, as exemplarily shown, in a transistor TR according to an embodiment of the present invention, the input electrode IE and the output electrode OE can be arranged below the semiconductor pattern AL, or can be arranged between the control electrode CE and the semiconductor pattern AL. Alternatively, the input electrode IE and the output electrode OE can also be arranged on the same layer as the semiconductor pattern AL and in direct contact with the semiconductor pattern AL. The transistor TR according to an embodiment of the present invention can be designed in various structures and is not limited to one embodiment.

[0074] The lower electrode E1 is disposed on the third insulating layer 30. The third insulating layer 30 is disposed on and covers the transistor TR. The third insulating layer 30 may contain organic and / or inorganic materials.

[0075] The lower electrode E1 can penetrate the third insulating layer 30 and be connected to the transistor TR. Additionally, although not shown, the initial substrate SUB1 may also include an additional connection electrode disposed between the lower electrode E1 and the transistor TR, in which case the lower electrode E1 can be electrically connected to the transistor TR via the connection electrode.

[0076] A fourth insulating layer 40 is disposed on the third insulating layer 30. A predetermined opening (hereinafter, opening) 40-OP may be defined on the fourth insulating layer 40. The opening 40-OP is formed at a position corresponding to the lower electrode E1 and exposes at least a portion of the lower electrode E1.

[0077] In this embodiment, the through-hole OP of the metal mask MSK can be provided at a position corresponding to the opening 40-OP of the fourth insulating layer 40. The metal mask MSK can be selectively patterned only at the opening 40-OP of the fourth insulating layer 40 through the through-hole OP. Relatedly, reference will be made to... Figure 3b To provide a more detailed explanation.

[0078] Reference Figure 3a and Figure 3b An initial substrate SUB1 can be formed by forming a light-emitting pattern EP on a substrate SUB. The light-emitting pattern EP can be formed by patterning a patterning material OL on the initial substrate SUB1. For example, the light-emitting pattern EP can be formed by depositing the patterning material OL at the position corresponding to the through portion OP using a metal mask MSK. However, this is an exemplary illustration, and the light-emitting pattern EP according to one embodiment of the present invention can also be formed by solution processes such as printing, as long as a metal mask MSK can be used, and is not limited to one embodiment.

[0079] Patterned materials (OLs) can include luminescent substances. For example, patterned materials (OLs) can be composed of at least one substance that emits red, green, and blue light, and can include fluorescent or phosphorescent substances. The luminescent substance can display light upon activation by an electrical signal. Patterned materials (OLs) can include organic or inorganic luminescent substances.

[0080] Multiple luminescent patterns EP are provided and arranged separately in the openings. In this embodiment, for ease of explanation, one luminescent pattern EP is shown arranged in one opening 40-OP.

[0081] However, this is only shown as an example; multiple light-emitting patterns EP overlapping one opening 40-OP can also be configured. Alternatively, one light-emitting pattern EP can also overlap with multiple openings. The light-emitting pattern EP according to one embodiment of the present invention can be formed in various forms and is not limited to one embodiment.

[0082] Reference Figure 3b The luminescent pattern EP is formed in the opening 40-OP. The lower electrode E1 exposed by the opening 40-OP can be covered by the luminescent pattern EP.

[0083] after, Figure 3c The image shows a cross-sectional view of the display panel DP. Figure 3c As shown, a display panel DP is formed by sequentially forming an upper electrode E2 and an encapsulation layer 50 on a light-emitting pattern EP. The upper electrode E2 is disposed on the light-emitting pattern EP. The upper electrode E2 is shown as an integral shape overlapping multiple light-emitting patterns. However, this is an exemplary illustration, and multiple upper electrodes E2 may also be provided and disposed separately on the light-emitting patterns EP.

[0084] An encapsulation layer 50 covers the light-emitting element (ED). The encapsulation layer 50 may include a first inorganic film 51, an organic film 52, and a second inorganic film 53. The first inorganic film 51 and the second inorganic film 53 may contain silicon nitride, silicon oxide, or compounds combining the latter. The first inorganic film 51 and the second inorganic film 53 may be formed by a deposition process such as chemical vapor deposition (CVD).

[0085] The organic film 52 can provide a flat surface on the first inorganic film 51. Curves formed on the upper surface of the first inorganic film 51 or particles present on the first inorganic film 51 can be covered by the organic film 52, thereby preventing the surface state of the upper surface of the first inorganic film 51 from affecting the structure of the second inorganic film 53 and the like formed on the organic film 52. Furthermore, the organic film 52 can alleviate stress between contacting layers. The organic film 52 can contain organic matter and can be formed by solution processes such as spin coating, slot coating, or inkjet coating.

[0086] By utilizing the deposition apparatus DPA according to an embodiment of the present invention, a pattern can be selectively formed only in the area corresponding to the through portion OP. Therefore, a display panel DP including a light-emitting element ED can be easily formed.

[0087] Figure 4a This is a perspective view showing a mask fixing part according to an embodiment of the present invention. Figure 4b yes Figure 4a An exploded perspective view of the mask fixing part is shown. Figure 4cyes Figure 4a The back view of the mask fixing part is shown. Hereinafter, refer to... Figures 4a to 4c This utility model will now be described.

[0088] like Figure 4a and Figure 4b As shown, the mask fixing part MKF may include a rotation axis RT, multiple plates YKP, multiple coupling parts CPP, and multiple magnet patterns MGN. The rotation axis RT may be a cylindrical shape extending along a third direction DR3. In this embodiment, the rotation axis RT is shown as a cylindrical shape, but it is not limited thereto. The rotation axis RT can rotate in a plane defined by the first direction DR1 and the second direction DR2, and the mask fixing part MKP can be converted into a first mode or a second mode by rotating the rotation axis RT. The first mode and the second mode can be distinguished according to the arrangement of the magnet patterns MGN, which will be described in detail later.

[0089] The board YKP may include a center board P0, a first board P1, and a second board P2. The center board P0 may have a quadrilateral shape with four sides. In this embodiment, the center board P0 includes a first side Sa and a second side Sb extending along a first direction DR1 and facing each other in a second direction DR2, and a third side Sc and a fourth side Sd extending along the second direction DR2 and facing each other in the first direction DR1. When assuming that the substrate SUB has a rectangular shape with a long side extending along the first direction DR1 and a short side extending along the second direction DR2, the third side Sc and the fourth side Sd may be provided with lengths at least corresponding to the short side of the substrate SUB. In addition, this is an exemplary illustration, and the shape of the center board P0 may be provided in various shapes depending on the shape of the substrate SUB, and is not limited to one embodiment.

[0090] A center plate P0 can be coupled to a rotation axis RT. The rotation axis RT can be arranged at the center of the center plate P0, so that the center of the rotation axis RT coincides with the center of the center plate P0. Thus, the center plate P0 can rotate at a rotation angle corresponding to the rotation of the rotation axis RT. When the rotation axis RT rotates, the center plate P0 can rotate on a plane without moving its position. That is, the rotation of the center plate P0 can be easily controlled by the rotation of the rotation axis RT. The center plate P0 can rotate in 90-degree units clockwise or counterclockwise by the rotation of the rotation axis RT. The first mode and the second mode can have a 90-degree rotation angle difference. For example, the second mode can be a state of rotating 90 degrees clockwise or 90 degrees counterclockwise from the first mode. Furthermore, this is an exemplary illustration; when the shape of the center plate P0 is polygonal, the rotation angle of the center plate P0 can be in units other than 90 degrees, for example, it can also be rotated in 360 / N angle units for an N-gon, and is not limited to one embodiment. Figures 4a to 4c The first mode state will be used as an example for explanation.

[0091] The first plate P1 and the second plate P2 can be arranged apart from each other by placing the center plate P0 between them. In this embodiment, the first plate P1, the center plate P0, and the second plate P2 can be arranged sequentially along the first direction DR1.

[0092] The first plate P1 can be arranged on one side of the central plate P0. In this embodiment, the first plate P1 can be arranged facing and adjacent to the third side Sc of the central plate P0. The first plate P1 can have a rectangular shape in the plane. The rectangular shape of the first plate P1 can be a shape with a length corresponding to one side of the central plate P0 and a width smaller than that length.

[0093] The second plate P2 can be arranged on the other side of the center plate P0. One side and the other side of the center plate P0 can face each other in the first direction DR1. Therefore, in this embodiment, the second plate P2 can be arranged facing and adjacent to the fourth side Sd of the center plate P0.

[0094] The second plate P2 can have a rectangular shape on a plane. The rectangular shape of the second plate P2 can be a shape having a length corresponding to one side of the central plate P0 and a width less than that length. In this embodiment, the first plate P1 and the second plate P2 can have the same shape. Furthermore, the central plate P0 can have a square shape. However, this is shown exemplary; according to the substrate SUB (refer to...),... Figure 1 The shape of the center plate P0 or the shape of the deposition area can be rectangular, or the first plate P1 and the second plate P2 can be designed to have different shapes from each other, and is not limited to one embodiment.

[0095] Multiple joints CPP can be provided, and each joint CPP can be coupled to the center plate P0. In this embodiment, the center plate P0 can have a quadrilateral shape with four sides, and two joints CPP can be arranged on each side, but the number or arrangement of the joints CPP is not limited to this.

[0096] Each of the joint portions CPP may include a portion that overlaps with the center plate P0 in a plane and another portion that does not overlap with the center plate P0 in a plane. A portion of each joint portion CPP may be physically joined to the center plate P0, while the other portion may be in a state of being joined or capable of being joined to plates other than the center plate P0. In this embodiment, a portion of the joint portion CPP may be arranged on the third side Sc of the center plate P0, such that the first plate P1 is joined to the center plate P0. Another portion of the joint portion CPP may be arranged on the fourth side Sd of the center plate P0, such that the second plate P2 is joined to the center plate P0. The remaining portions of the joint portion CPP may be arranged on the first side Sa or the second side Sb, and may be exposed to not be joined to other plates.

[0097] The magnet pattern MGN may include a central group G0, a first group G1, and a second group G2. The central group G0 may be arranged on a central plate P0 and bonded to the back of the central plate P0. The magnet patterns M1G and M2G of the central group G0 may be completely covered by the central plate P0. The magnet patterns M1G and M2G of the central group G0 may be arranged in a matrix pattern where magnet patterns M1G and M2G with different polarities alternate along a second direction DR2. The first magnet pattern M1G of the central group G0 may be an N pole or a S pole, and the adjacent second magnet pattern M2G may be of the opposite pole, i.e., an S pole or an N pole.

[0098] The first group G1 can be arranged on the first plate P1 and bonded to the back of the first plate P1. The magnetic patterns M11 and M21 of the first group G1 can be completely covered by the first plate P1. The magnetic patterns M11 and M21 of the first group G1 can be arranged in a matrix pattern where magnetic patterns M11 and M21 with different polarities alternate along the first direction DR1 and the second direction DR2. In this embodiment, the matrix shape of the first group G1 is exemplarily shown as an arrangement of 2 columns along the first direction DR1 and 8 rows along the second direction DR2.

[0099] The first group G1 is arranged adjacent to the central group G0 in the first direction DR1. Therefore, the number of magnet patterns M11 and M21 of the first group G1 arranged along the second direction DR2 can correspond to the number of magnet patterns M1G and M2G of the central group G0. In this embodiment, since the matrix shape of the central group G0 has an arrangement of 8 rows along the second direction DR2, the matrix shape of the first group G1 can have a corresponding arrangement of 8 rows. The number of magnet patterns M11 and M21 of the first group G1 arranged along the first direction DR1 can be designed in various ways depending on the length of the substrate SUB in the first direction DR1, and is not limited to one embodiment.

[0100] The second group G2 can be arranged on the second plate P2 and bonded to the back of the second plate P2. The magnetic patterns M12 and M22 of the second group G2 can be completely covered by the second plate P2. The magnetic patterns M12 and M22 of the second group G2 can also be arranged in a matrix pattern where magnetic patterns M12 and M22 with different polarities alternate along the first direction DR1 and the second direction DR2. In this embodiment, the matrix shape of the second group G2 is exemplarily shown as an arrangement of 2 columns along the first direction DR1 and 8 rows along the second direction DR2.

[0101] The second group G2 is arranged adjacent to the central group G0 along the first direction DR1. Therefore, the number of magnet patterns M12 and M22 of the second group G2 arranged along the second direction DR2 can correspond to the number of magnet patterns M1G and M2G of the central group G0. That is, this corresponds to the first group G1 facing each other along the first direction DR1, and the matrix shape of the second group G2 can have a corresponding arrangement of 8 rows. The number of magnet patterns M12 and M22 of the second group G2 arranged along the first direction DR1 can be designed in various ways depending on the length of the substrate SUB in the first direction DR1, and is not limited to one embodiment.

[0102] Reference Figure 4c The mask MSK can be arranged along a first direction DR1. In the first mode, the magnet pattern can provide multiple rows of magnet patterns PNH1 and PNH2 arranged along a second direction DR2 and extending respectively along the first direction DR1. The arrangement direction of the mask MSK can intersect the arrangement direction of the magnet pattern rows PNH1 and PNH2. At least one of the mask MSKs can overlap with the first plate P1, or with the second plate P2, or with the center plate P0. That is, the mask MSK can include at least one of a mask that overlaps only with the first plate P1, a mask that overlaps only with the second plate P2, and a mask that overlaps only with the center plate P0.

[0103] Each of the magnetic pattern rows PNH1 and PNH2 can be constructed using magnets having the same polarity. Magnetic pattern rows PNH1 and PNH2 can include a first magnetic pattern row PNH1 and a second magnetic pattern row PNH2. The first magnetic pattern row PNH1 can be constructed using magnetic patterns having a first polarity. That is, the first magnetic pattern row PNH1 can include the first magnetic pattern M1G of the central group G0, the first magnetic pattern M11 of the first group G1, and the first magnetic pattern M12 of the second group G2. In the first magnetic pattern row PNH1, the magnetic patterns having the first polarity are arranged spaced apart from each other along a first direction DR1.

[0104] The second magnet pattern row PNH2 can be constructed using magnet patterns with a second polarity. That is, the second magnet pattern row PNH2 may include the second magnet pattern M2G of the central group G0, the second magnet pattern M21 of the first group G1, and the second magnet pattern M22 of the second group G2. In the second magnet pattern row PNH2, the magnet patterns with the second polarity are arranged spaced apart from each other along the first direction DR1.

[0105] Each of the first magnet pattern row PNH1 and the second magnet pattern row PNH2 can be provided in multiples and can be arranged alternately with each other. That is, in this embodiment, the multiple first magnet pattern rows PNH1 and the multiple second magnet pattern rows PNH2 can be arranged alternately along the second direction DR2.

[0106] According to this invention, a mask fixing part MKF is provided in a first mode, thereby providing rows of magnet patterns PNH1, PNH2 arranged along a second direction DR2 intersecting the arrangement direction of the mask MSK. Thus, magnetic force can be uniformly distributed across each mask, and a uniform fixing force on the mask can be provided throughout the entire area.

[0107] Figure 5a This is a perspective view showing a mask fixing part according to an embodiment of the present invention. Figure 5b yes Figure 5a An exploded perspective view of the mask fixing part shown. Figure 5c yes Figure 5a The back view of the mask fixing part is shown. Figures 5a to 5c The mask fixing part of the second mode is shown, and the parts are shown respectively with... Figures 4a to 4c The corresponding diagram. See below for reference. Figures 5a to 5c This utility model will now be described.

[0108] like Figure 5a and Figure 5b As shown, the mask fixing part MKF can be a second mode. The mask fixing part MKF of the second mode may include a center plate P0 of the second mode, a first plate P1 of the second mode, and a second plate P2 of the second mode.

[0109] The center plate P0 of the second mode can be provided by rotating the center plate P0 of the first mode by a predetermined angle. In this embodiment, the center plate P0 of the second mode can correspond to the case where the center plate P0 of the first mode is rotated 90 degrees counterclockwise or clockwise in the plane defined by the first direction DR1 and the second direction DR2. Therefore, the positions of the first side Sa, the second side Sb, the third side Sc, and the fourth side Sd of the center plate P0 of the first mode can be changed. Specifically, the first side Sa can be moved to a position facing the first plate P1, and the second side Sb can be moved to a position facing the second plate P2. The third side Sc and the fourth side Sd can be moved to a position where they are not facing the plate and are exposed.

[0110] The first plate P1 of the second mode can be the same as the first plate P1 of the first mode in that it is joined to the center plate P0 through the joint CPP. However, the opposing side of the first plate P1 of the second mode can be changed to the first side Sa of the center plate P0, thereby changing the arrangement of the first group G1 of magnet patterns arranged on the first plate P1 of the second mode.

[0111] The second plate P2 of the second mode can be the same as the second plate P2 of the first mode in that it is joined to the center plate P0 through the joint CPP. However, the opposing side of the second plate P2 of the second mode can be changed to the second side Sb of the center plate P0, thereby changing the arrangement of the magnet patterns of the second group G2 arranged on the second plate P2 of the second mode.

[0112] Reference Figure 5b and Figure 5cThe magnet pattern MGN is described in detail below. The second mode magnet pattern MGN may include a second mode center group G0, a second mode first group G1, and a second mode second group G2. The second mode center group G0 may include magnet patterns with a different arrangement than the magnet patterns in the first mode center group G0. The second mode center group G0 may include multiple first magnet patterns M1G and multiple second magnet patterns M2G, and the multiple first magnet patterns M1G and multiple second magnet patterns M2G are arranged alternately in a first direction DR1. Specifically, the first magnet patterns M1G of the second mode center group G0 are arranged spaced apart from each other along the second direction DR2, and the second magnet patterns M2G of the second mode center group G0 are also arranged spaced apart from each other along the second direction DR2. The first magnet patterns M1G and second magnet patterns M2G of the second mode center group G0 may be arranged alternately along the first direction DR1. That is, in the second mode center group G0, magnet patterns with a first polarity and magnet patterns with a second polarity may be arranged alternately along the first direction DR1. The first magnet pattern M1G of the central group G0 can be an N pole or a S pole, and the second magnet pattern M2G arranged adjacent to it can be the opposite pole, that is, an S pole or an N pole.

[0113] The magnet patterns of the first group G1 arranged on the first plate P1 of the second mode may include a plurality of first magnet patterns M11 arranged along the second direction DR2 and a plurality of second magnet patterns M21 arranged along the second direction DR2. In the magnet patterns of the first group G1 arranged on the first plate P1 of the second mode, magnet patterns with first polarity and magnet patterns with second polarity may be arranged alternately along the first direction DR1.

[0114] The magnet patterns of the second group G2 arranged on the second plate P2 of the second mode may include a plurality of first magnet patterns M12 arranged along the second direction DR2 and a plurality of second magnet patterns M22 arranged along the second direction DR2. In the magnet patterns of the second group G2 arranged on the second plate P2 of the second mode, magnet patterns with first polarity and magnet patterns with second polarity may be arranged alternately along the first direction DR1.

[0115] Reference Figure 5c The masks MSK can be arranged along the second direction DR2. At least one of the masks MSK can completely overlap with the first plate P1, the second plate P2, and the center plate P0. That is, each of the masks MSK can have a length that extends in a manner that completely overlaps with the first plate P1, the center plate P0, and the second plate P2.

[0116] In this embodiment, the magnet patterns can be provided as multiple magnet pattern columns PNV1 and PNV2 arranged along a first direction DR1 and extending along a second direction DR2 respectively. The arrangement direction of the mask MSK can intersect with the arrangement direction of the magnet pattern columns PNV1 and PNV2. Each of the magnet pattern columns PNV1 and PNV2 can be constructed using magnet patterns having the same polarity as each other.

[0117] The magnet pattern columns PNV1 and PNV2 may include a first magnet pattern column PNV1 and a second magnet pattern column PNV2. The first magnet pattern column PNV1 may be constructed using magnet patterns with a first polarity. That is, the first magnet pattern column PNV1 may be constructed using only the first magnet pattern M11 of the first group G1, or only the first magnet pattern M1G of the central group G0, or only the first magnet pattern M12 of the second group G2. The magnet patterns with the first polarity are arranged spaced apart from each other along the second direction DR2 to form the first magnet pattern column PNV1.

[0118] The second magnet pattern column PNV2 can be constructed using magnet patterns with a second polarity. That is, the second magnet pattern column PNV2 can be constructed using only the second magnet pattern M21 of the first group G1, or only the second magnet pattern M2G of the central group G0, or only the second magnet pattern M22 of the second group G2. The magnet patterns with the second polarity are arranged separately from each other along the second direction DR2 to form the second magnet pattern column PNV2.

[0119] Each of the first magnet pattern column PNV1 and the second magnet pattern column PNV2 can be provided in multiples and can be arranged alternately with each other. That is, in this embodiment, the multiple first magnet pattern columns PNV1 and the multiple second magnet pattern columns PNV2 can be arranged alternately along the first direction DR1.

[0120] According to this invention, a mask fixing part MKF is provided in a second mode, thereby providing a series of magnet patterns PNV1, PNV2 arranged along a first direction DR1 that intersects a second direction DR2, which is the arrangement direction of the mask MSK. Thus, magnetic force can be uniformly distributed in each mask, and a fixing force on the mask can be uniformly provided throughout the entire area.

[0121] Furthermore, according to this invention, a rotatable central plate P0 and plates P1 and P2 coupled thereto can be provided separately according to the pattern, so that even if the mask arrangement direction changes, a mask fixing part MKF capable of forming magnetic force in the intersecting direction can be easily provided. According to this invention, a magnetic pattern MGN is provided in an island shape, and the central plate P0 is rotatable, thereby stably providing a magnetic environment for mask bonding for various mask arrangement directions. Furthermore, plates P1 and P2, which can provide different arrangements of magnetic patterns MGN according to each pattern, are stably separated and coupled using the coupling part CPP, thereby allowing easy replacement of plates P1 and P2. Therefore, a mask fixing part applicable to various environments where the size or position of the substrate may change, and a deposition apparatus including the same, can be provided.

[0122] Figure 6a The magnet pattern is based on a comparative embodiment of the present invention. Figure 6b It shows about Figure 6a The graph shows the distribution of magnetic force at the location of the magnet pattern. Figure 7a This is a magnet pattern according to an embodiment of the present invention. Figure 7b and Figure 7c It shows about Figure 7a The graph shows the distribution of magnetic field strength at the locations of the magnetic patterns. For ease of explanation, Figure 6a and Figure 7a The diagram shows the arrangement of the magnet pattern in a state viewed from a third-party DR3 orientation, in relation to... Figure 4c Corresponding. See below for reference. Figures 6a to 7c This utility model will now be described.

[0123] Reference Figure 6a According to the comparative embodiment, the magnet pattern may include a first magnet pattern M1-C and a second magnet pattern M2-C. The first magnet pattern M1-C and the second magnet pattern M2-C may have different polarities. That is, when the first magnet pattern M1-C has an N-pole magnetism, the second magnet pattern M2-C may have an S-pole magnetism. Each of the first magnet pattern M1-C and the second magnet pattern M2-C may have a strip shape having a length extending along a first direction DR1. Each of the first magnet pattern M1-C and the second magnet pattern M2-C may be provided in multiple forms and may be arranged alternately along a second direction DR2 intersecting the length direction.

[0124] Figure 6bThe diagram shows the magnetic force intensity measured by DRC along the arrangement direction of the magnet patterns. In the magnetic force curve PLT-C of the comparative embodiment, the highest point PKH-C can correspond to the polarity of one of the first magnet patterns M1-C and the second magnet pattern M2-C, and the lowest point PKL-C can correspond to the polarity of the other of the first magnet pattern M1-C and the second magnet pattern M2-C. The first magnet pattern M1-C and the second magnet pattern M2-C, which have different polarities, can be arranged alternately along the arrangement direction DRC. Therefore, the magnetic force curve PLT-C of the comparative embodiment can have a shape with a predetermined period of alternating polarities that are opposite according to position. For example, the magnetic force curve PLT-C of the comparative embodiment can have a sine curve, but is not limited thereto.

[0125] Reference Figure 7a According to one embodiment of the present invention, the magnet pattern may include a first magnet pattern M1 and a second magnet pattern M2 having different polarities from each other, each of the first magnet pattern M1 and the second magnet pattern M2 may have an island shape. That is, each of the first magnet pattern M1 and the second magnet pattern M2 may be provided in multiples, arranged spaced apart from each other along a first direction DR1 and spaced apart from each other along a second direction DR2. In this embodiment, each of the first magnet pattern M1 and the second magnet pattern M2 is shown as having a square shape, but this is an exemplary illustration, and they may have various shapes such as circles, polygons, and ellipses, and are not limited to one embodiment.

[0126] The first magnet pattern M1 and the second magnet pattern M2 may be arranged with a first spacing PT1 separating them in the first direction DR1 and a second spacing PT2 separating them in the second direction DR2. In this embodiment, the first spacing PT1 and the second spacing PT2 are shown to be the same as each other, but this is not a limitation. The first spacing PT1 and the second spacing PT2 may be designed independently of each other and are not limited to one embodiment.

[0127] In this embodiment, the magnetic pattern is shown as a second pattern. That is, the magnetic pattern can have an arrangement including multiple columns of magnetic patterns PNV arranged along the first direction DR1. Thus, multiple first magnetic patterns M1 and multiple second magnetic patterns M2 can be arranged alternately along the first direction DR1, and in one column along the second direction DR2, the multiple first magnetic patterns M1 can be arranged spaced apart from each other, and in another column, the multiple second magnetic patterns M2 can be arranged spaced apart from each other.

[0128] Figure 7b The curve PLT1 shown represents the magnetic force measured by DRC1 along the arrangement direction of the magnet pattern columns PNV1 and PNV2. Figure 7cThe curve PLT2 shown represents the magnetic force intensity measured along the extension direction DRC2 for each of the magnet pattern columns PNV1 and PNV2. Figure 7c The curve PLT2 shown illustrates the relationship between curve PLT2 and curve PLT2. Figure 7a The magnetic intensity distribution of the six magnet pattern columns PNV shown.

[0129] exist Figure 7b In the curve PLT1 shown, the highest point PKH1 can correspond to the polarity of one of the first magnet pattern M1 and the second magnet pattern M2, and the lowest point PKL1 can correspond to the polarity of the other of the first magnet pattern M1 and the second magnet pattern M2. The first magnet pattern M1 and the second magnet pattern M2, which have different polarities, can be arranged alternately along the arrangement direction DRC1. Therefore, the magnetic force curve PLT1 presented along the arrangement direction DRC1 can have a shape with a predetermined period of alternating polarities that are opposite depending on the position. For example, the curve PLT1 can be a sine curve, but it is not limited to this.

[0130] exist Figure 7c In the curve PLT2 shown, the highest point PKH2 can correspond to the polarity of one of the first magnet pattern M1 and the second magnet pattern M2, and the lowest point PKL2 can be a blank space, specifically, it can be the midpoint between magnet patterns M1 and M2. For example, in the case of the first magnet pattern column PNV1, the lowest point PKL2 can be the midpoint between two first magnet patterns M1 separated by the second direction DR2. Alternatively, in the case of the second magnet pattern column PNV2, the lowest point PKL2 can be the midpoint between two second magnet patterns M2 separated by the second direction DR2. The midpoint can be equally affected by the magnetic force of the two adjacent magnet patterns, so the magnetic force intensity at the midpoint can correspond to half the polarity of the highest point PKH2. Within the magnet pattern columns PNV1 and PNV2, the magnet patterns are arranged with a predetermined second spacing PT2, so the magnetic force intensity curve PLT2 measured along the extension direction DRC2 can be represented as a curve with a periodicity where the highest point PKH2 and the lowest point PKL2 repeat according to their positions.

[0131] According to this invention, the curve PLT1 presented along the arrangement direction DRC1 can have a magnetic force distribution corresponding to the curve in the strip-shaped magnetic pattern. Furthermore, although the curve PLT2 presented along the extension direction DRC2 has a predetermined period, it also has sufficient magnetic force at its lowest point PKL2. Therefore, the island-shaped magnetic pattern can also provide sufficient magnetic force for fixing the mask in the extension direction DRC2. At this time, the magnetic force distribution can be adjusted in various ways by controlling the first spacing PT1 or the second spacing PT2. According to this invention, the island-shaped magnetic pattern can also provide a sufficiently large magnetic force and can provide a relatively uniformly distributed magnetic force across the entire area of ​​the mask fixing portion.

[0132] The above description refers to preferred embodiments of the present invention. However, those skilled in the art or with ordinary knowledge in the art will understand that various modifications and alterations can be made to the present invention without departing from the concept and technical scope of the invention as set forth in the claims. Therefore, the technical scope of the present invention is not limited to the contents described in the detailed specification, but should be determined by the claims.

Claims

1. A deposition apparatus characterized by comprising: include: Deposition chambers provide internal space; A deposition source is provided within the internal space; A plate is provided in the internal space and is rotatable; Multiple magnetic patterns are arranged in n rows and m columns on the front surface of the plate, where n and m are positive integers greater than 1; as well as Multiple masks are arranged between the plate and the deposition source and are fixed by the magnetic pattern. The plate includes: The center plate is arranged with the magnetic patterns of the central group of the plurality of magnetic patterns, and is rotatable; The first plate is arranged with the first group of magnetic patterns from the plurality of magnetic patterns; and The second plate has the second group of magnetic patterns arranged from the plurality of magnetic patterns. The first plate and the second plate are located on one side and the other side of the central plate in a first direction. The plate can be rotated to change to either a first mode or a second mode. The first plate in the first mode and the first plate in the second mode include magnet patterns with different arrangements from each other.

2. The deposition apparatus according to claim 1, characterized in that, The center plate is rotated 90 degrees clockwise or counterclockwise to change to the first mode or the second mode.

3. The deposition apparatus according to claim 2, characterized in that, In the first mode, the masks are arranged along the first direction. In the first mode, each of the magnet patterns faces a magnet pattern having the same polarity as each other in the first direction, and faces a magnet pattern having different polarities as each other in a second direction intersecting the first direction.

4. The deposition apparatus according to claim 3, characterized in that, In the first mode, at least one of the masks overlaps only with one of the center plate, the first plate, and the second plate.

5. The deposition apparatus according to claim 3, characterized in that, In the second mode, the masks are arranged along the second direction. In the second mode, each of the magnet patterns faces a magnet pattern having the same polarity as each other in the second direction and a magnet pattern having different polarities as each other in the first direction.

6. The deposition apparatus according to claim 5, characterized in that, In the second mode, at least one of the masks overlaps completely with the center plate, the first plate, and the second plate.

7. The deposition apparatus according to claim 1, characterized in that, The m is less than the n.

8. The deposition apparatus according to claim 1, characterized in that, The central plate has an N-sided shape. The center plate is rotated 360 / N degrees clockwise or counterclockwise from the first mode to change to the second mode.

9. The deposition apparatus according to claim 8, characterized in that, The central plate has a square shape, and the first plate and the second plate each have a rectangular shape.

10. The deposition apparatus according to claim 1, characterized in that, Each of the masks is a fine metal mask.

11. The deposition apparatus of claim 1, wherein Also includes: The joint allows the center plate to be joined to the first plate or to the second plate. The first plate or the second plate can be detached from the joint.

12. A deposition apparatus characterized by comprising: include: Deposition chambers provide internal space; A deposition source is provided within the internal space; Multiple masks are arranged apart from the deposition source and aligned along one direction; as well as The mask fixing part is capable of rotating clockwise or counterclockwise on a plane and fixing the mask. The mask fixing part includes: A plate, provided in the internal space, and capable of rotation; and Multiple first magnet patterns and multiple second magnet patterns are arranged on the plate. Each of the first magnet patterns has a first magnetic property, and each of the second magnet patterns has a second magnetic property different from the first magnetic property and is separated from the first magnet pattern. The first magnet pattern is arranged along a cross direction that intersects with the first direction. The second magnet pattern is arranged along the intersecting direction. The first magnet pattern and the second magnet pattern are arranged alternately along the said direction.

13. The deposition apparatus according to claim 12, characterized in that, The deposition chamber includes a bottom surface defined by a first direction and a second direction that intersect each other. The mask fixing part can be rotated to switch between a first mode and a second mode. In the first mode, the direction is parallel to the first direction. In the second mode, the first direction is parallel to the second direction.

14. The deposition apparatus according to claim 13, characterized in that, The plate includes: The center plate is rotatable; The first and second plates are arranged with the central plate placed between them and spaced apart from each other. The central plate can be rotated clockwise or counterclockwise to switch to the first mode or the second mode.

15. The deposition apparatus according to claim 14, characterized in that, In the first mode, the first plate includes a first group of magnetic patterns with different polarities arranged along the second direction. In the second mode, the first plate includes a first group of magnetic patterns with different polarities arranged along the first direction.

16. The deposition apparatus according to claim 14, characterized in that, The first plate and the second plate can be detached from the center plate.

17. The deposition apparatus according to claim 14, characterized in that, The rotation angle difference between the first mode and the second mode is 90 degrees.

18. The deposition apparatus according to claim 14, characterized in that, The magnetic pattern arranged on the central plate is arranged in rows and columns a, where a is a positive integer greater than or equal to 1.

19. The deposition apparatus according to claim 12, characterized in that, The magnet pattern is arranged in an n-row m-column matrix shape, where the n rows are defined in one direction and the m columns are defined in the intersecting directions, and n and m are positive integers greater than or equal to 1.

20. The deposition apparatus according to claim 19, characterized in that, The n is less than the m.

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