Microwave plasma chemical vapor deposition apparatus
CN310054030SActive Publication Date: 2026-06-26CHINA ELECTRONICS TECHNOLOGY THIRD GENERATION SEMICONDUCTOR TECHNOLOGY INNOVATION (HUNAN) CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Designs(China)
- Current Assignee / Owner
- CHINA ELECTRONICS TECHNOLOGY THIRD GENERATION SEMICONDUCTOR TECHNOLOGY INNOVATION (HUNAN) CO LTD
- Filing Date
- 2025-12-10
- Publication Date
- 2026-06-26
Smart Images
Figure 000006_ABST
Abstract
1. The name of the design product: microwave plasma chemical vapor deposition equipment. 2. The use of the design product: for crystal growth and thin film deposition of diamond materials. 3. The design points of the design product: in shape. 4. The picture or photo that best shows the design points: perspective view. 5. The bottom surface of the design product is the part that is not easy to see or cannot be seen during use, and the top view is omitted.
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