Microwave plasma chemical vapor deposition reactor (MPCVD dome)
CN310076377SActive Publication Date: 2026-07-07ZHONGKE FANYAN (HENAN) SUPERHARD MATERIALS CO LTD
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Patent Information
- Application Number
- CN202530724059.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Designs(China)
- Current Assignee / Owner
- Filing Date
- 2025-12-08
- Publication Date
- 2026-07-07
- Estimated Expiration
- 2040-12-08
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Figure 000001_ABST
Abstract
1. The name of the design product: microwave plasma chemical vapor deposition reaction chamber (MPCVD butterfly cavity). 2. The use of the design product: for the reaction cavity of MPCVD microwave plasma chemical vapor deposition equipment. 3. The design points of the design product: in shape. 4. The picture or photo that best indicates the design points: front view.
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