Method for manufacturing an optoelectronic component

Abstract

Method for manufacturing an optoelectronic component, comprising the steps: A) Providing a radiation-emitting layer sequence (1) with an active area (13) which emits primary electromagnetic radiation during operation, B) Providing a first wavelength conversion layer (2) that converts at least some of the primary radiation into secondary electromagnetic radiation and C) Arranging the first wavelength conversion layer (2) on the radiation-emitting layer sequence (1) in the beam path of the primary radiation, wherein - in step C the first wavelength conversion layer (2) is arranged on the radiation-emitting layer sequence (1) by means of a combination of clamps with gluing or laminating, - a substrate (11) of the radiation-emitting layer sequence (1) is arranged between the first wavelength conversion layer (2) and the active region (13), and - Clamping devices (4) are arranged on the substrate (11).

Description

[0001] The present invention relates to a method for producing an optoelectronic component.

[0002] Optoelectronic components with wavelength conversion materials are known from the documents US 5 909 081 A, EP 0 936 682 B2, DE 10 2004 060 358 A1, US 2007 / 0 086 184 A1, DE 103 12 679 A1, JP 2007 - 42 679 A and JP 2007 - 180 066 A.

[0003] At least one object of certain embodiments is to specify a method for producing an optoelectronic component with a radiation-emitting layer sequence and a wavelength conversion layer.

[0004] These objects are achieved by a method having the features of the independent patent claim. Advantageous embodiments and further developments of the subject matter are characterized in the dependent claims and will further become apparent from the following description and the drawings.

[0005] The method for producing an optoelectronic component comprises the steps A) Providing a radiation-emitting layer sequence with an active region which emits primary electromagnetic radiation during operation, B) providing a first wavelength conversion layer which converts the primary radiation at least partially into electromagnetic secondary radiation and C) Arranging the first wavelength conversion layer on the radiation-emitting layer sequence in the beam path of the primary radiation.

[0006] Such a method can make it possible for the radiation-emitting layer sequence and the first wavelength conversion layer to be manufactured separately from one another and to be arranged together only after complete production. An advantage of such separate production of the radiation-emitting layer sequence and the first wavelength conversion layer can be that, for example, process steps can be performed for the provision of the first wavelength conversion layer that would impair the quality and / or functionality of the radiation-emitting layer sequence.In particular, methods involving thermal treatment, irradiation with UV light or other electromagnetic radiation, or with particles such as electrons are conceivable, which can be beneficial for the provision of the first wavelength conversion layer on the one hand, but damaging to the radiation-emitting layer sequence on the other. Likewise, the above process may allow the presence of solvents, water, or reactive gases, for example, as externally supplied agents or as reaction products during the provision of the first wavelength conversion layer.

[0007] The fact that a layer or element is arranged or applied "on" or "over" another layer or element can mean here and below that one layer or element is arranged in direct mechanical and / or electrical contact with the other layer or element. Furthermore, it can also mean that one layer or element is arranged indirectly on or over the other layer or element. In this case, further layers and / or elements can be arranged between one and the other layer.

[0008] The arrangement of the first wavelength conversion layer on the radiation-emitting layer sequence in the beam path of the primary radiation according to the above-mentioned method step C involves attaching the first wavelength conversion layer to the radiation-emitting layer sequence by clamping, gluing, or lamination. In particular, this enables a permanent and resilient connection between the radiation-emitting layer sequence and the first wavelength conversion layer. A silicone- or epoxy-based material, for example, can be used as the adhesive, which can be cured at room temperature or at a temperature compatible with the radiation-emitting layer sequence. The refractive index of the adhesive is advantageously matched to that of the wavelength conversion layer and / or that of the radiation-emitting layer sequence.

[0009] Furthermore, process step B can include the following sub-steps: B1) Applying a wavelength conversion substance to a carrier substrate, B2) Applying a binder to the carrier substrate and B3) Curing the binder to fix the wavelength conversion material.

[0010] The carrier substrate may, for example, comprise or be made of a transparent material. Suitable carrier substrate materials may, for example, be glass, plastic, or metal in plate or film form, or combinations or mixtures thereof.

[0011] The wavelength conversion material and the binder, which are described in more detail below, can thus form the first wavelength conversion layer together with the carrier substrate.

[0012] The application of a wavelength conversion substance can be done, for example, by spraying, printing or dusting.

[0013] Furthermore, process step B can also include the following sub-steps: B1') Providing a mixture of a wavelength conversion substance and a matrix material, B2') Applying the mixture to a carrier substrate, B3') Curing the mixture.

[0014] The wavelength conversion substance and the matrix material, together with the carrier substrate, can form the wavelength conversion layer. Furthermore, after step B3', in a further process step, the cured mixture comprising the wavelength conversion substance and the cured matrix material can also be detached from the carrier substrate using mechanical, optical, and / or chemical methods. The cured mixture can then form the wavelength conversion layer without the carrier substrate.

[0015] Furthermore, the process step can also include the following sub-steps: B1'') Providing a mixture of a wavelength conversion substance and a matrix material, B2'') Forming a film or sheet from the mixture, B3'') Curing the mixture to the first wavelength conversion layer.

[0016] The mixture can be formed into a film or sheet by injection molding, transfer molding, compression molding, extrusion, rolling or film drawing.

[0017] The wavelength conversion substance can be suitable for at least partially absorbing the primary electromagnetic radiation and emitting it as secondary radiation with a wavelength range that is at least partially different from the primary radiation. The primary electromagnetic radiation and secondary electromagnetic radiation can comprise one or more wavelengths and / or wavelength ranges in an infrared to ultraviolet wavelength range, in particular in a visible wavelength range. The spectrum of the primary radiation and / or the spectrum of the secondary radiation can be narrowband, meaning that the primary radiation and / or the secondary radiation can have a monochromatic or nearly monochromatic wavelength range.The spectrum of the primary radiation and / or the spectrum of the secondary radiation can alternatively also be broadband, meaning that the primary radiation and / or the secondary radiation can have a mixed-color wavelength range, wherein the mixed-color wavelength range can have a continuous spectrum and / or several discrete spectral components with different wavelengths. For example, the electromagnetic primary radiation can have a wavelength range from an ultraviolet to green wavelength range, while the electromagnetic secondary radiation can have a wavelength range from a blue to infrared wavelength range. Particularly preferably, the primary radiation and the secondary radiation can be superimposed to create a white-colored luminous impression.For this purpose, the primary radiation can preferably create a blue-colored luminous impression and the secondary radiation a yellow-colored luminous impression, which can be caused by spectral components of the secondary radiation in the yellow wavelength range and / or spectral components in the green and red wavelength range.

[0018] In particular, the optoelectronic component can emit a superposition of primary and secondary radiation. For an external observer, the aforementioned mixed-color luminous impression can therefore be perceived by the superposition of the electromagnetic primary radiation and electromagnetic secondary radiation. The mixed-color luminous impression can depend on the relative proportions of the primary and secondary radiation.

[0019] The wavelength conversion material can comprise one or more of the following materials: garnets of rare earths and alkaline earth metals, for example YAG:Ce 3+, nitrides, nitridosilicates, siones, sialons, aluminates, oxides, halophosphates, orthosilicates, sulfides, vanadates, and chlorosilicates. Furthermore, the wavelength conversion substance can additionally or alternatively comprise an organic material selected from a group comprising perylenes, benzopyrenes, coumarins, rhodamines, and azo dyes. Further examples and embodiments are described in the document DE 10 2007 049 005 A1. The wavelength conversion layer can comprise suitable mixtures and / or combinations of the aforementioned wavelength conversion substances. This can make it possible, for example, for the wavelength conversion layer, as described above, to absorb in a blue first wavelength range and emit in a second wavelength range comprising green and red wavelengths and / or yellow wavelength ranges.

[0020] The wavelength conversion substance can be present at least partially in the form of particles that can have a size of 2 to 10 µm. Furthermore, in addition to the conversion property described above, the particles can be suitable for at least partially scattering the primary radiation and / or the secondary radiation. Thus, a wavelength conversion substance can be configured simultaneously as a luminous center that partially absorbs radiation from the primary radiation and emits secondary radiation, and as a scattering center for the primary radiation and / or the secondary radiation. Such scattering properties of a wavelength conversion substance can thus lead to improved radiation extraction.The scattering effect can, for example, also lead to an increase in the absorption probability of primary radiation in the wavelength conversion layer, whereby a thinner layer thickness of the wavelength conversion layer may be sufficient to achieve the required conversion efficiency. Alternatively or additionally, scattering particles can be mixed with the wavelength conversion material. In particular, the scattering particles can comprise, for example, a metal oxide, such as titanium oxide or aluminum oxide such as corundum, and / or glass particles. The scattering particles can have diameters or grain sizes ranging from less than one micrometer up to a size of 10 µm or even up to 100 µm.

[0021] The matrix material or binder can be at least partially transparent to the primary radiation and the secondary radiation and can be suitable for surrounding the wavelength conversion substance and / or for being chemically or adhesively bonded to the wavelength conversion substance. The matrix material or binder can comprise, for example, curable organic materials such as siloxanes, epoxies, acrylates, methyl methacrylates, imides, carbonates, olefins, styrenes, urethanes, or derivatives thereof in the form of monomers, oligomers, or polymers, and furthermore also mixtures, copolymers, or compounds therewith. For example, the matrix material or binder can comprise or be an epoxy resin, polymethyl methacrylate (PMMA), polystyrene, polycarbonate, polyacrylate, polyurethane, or a silicone resin such as polysiloxane, or mixtures thereof. Alternatively or additionally, the matrix material or binder can also comprise inorganic materials.Advantageously, the refractive index of the matrix material or binder can be adapted to that of the radiation-emitting layer sequence.

[0022] Curing of the matrix material or binder can occur through evaporation or vaporization of solvents or reaction products and / or through crosslinking reactions. Curing can occur through mechanical action, such as pressure application; through thermal action, such as heating; through light exposure, such as irradiation with light in the ultraviolet to infrared wavelength range; through particle exposure, such as irradiation with electrodes; and / or through the addition of other materials that can cause crosslinking reactions in the matrix material.

[0023] The wavelength conversion substance(s) can be distributed homogeneously within the matrix material or, after application of the binder, within the matrix material. Furthermore, the wavelength conversion layer can comprise multiple wavelength conversion substances arranged in different layers within the wavelength conversion layer.

[0024] Furthermore, the wavelength conversion substance(s) can be contained in the matrix material, which can be present in a liquid phase. The liquid matrix material with the wavelength conversion substance(s) can then be applied to the carrier substrate or molded and formed in layer form as a wavelength conversion layer through drying and / or crosslinking processes. Alternatively, the matrix material with the wavelength conversion substance can be vapor-deposited in process step B2' described above, or the binder can be vapor-deposited in process step B2' described above. Furthermore, the matrix material with the wavelength conversion substance can subsequently be cured through crosslinking reactions.

[0025] The wavelength conversion substance and / or the binder and / or the matrix material containing the wavelength conversion substance can be applied over a large area or in a laterally structured manner, for example, by screen printing. "Laterally structured" can mean that areas on the carrier substrate remain free of the wavelength conversion substance and / or the binder and / or the matrix material containing the wavelength conversion substance, while other areas are covered by it. This can make it possible to achieve a structured radiation characteristic of the optoelectronic component, through which information can be conveyed to an observer, for example, by means of at least one character, letter, and / or pictogram.

[0026] A surface structure can be produced on at least one surface of the wavelength conversion layer in a further method step. The surface of the wavelength conversion layer can preferably be a surface that, after the wavelength conversion layer has been arranged on the radiation-emitting layer sequence, is a surface of the wavelength conversion layer facing away from the radiation-emitting layer sequence. The surface structure can have roughened portions, grooves, prisms, lenses, or truncated cones, or combinations thereof, which can, for example, increase and improve the coupling-out of the primary radiation and the secondary radiation from the encapsulation arrangement. Depending on the design of the wavelength conversion layer, the surface structure can be produced in the matrix material, the binder, or the carrier substrate.The surface structure can be applied before process step C, namely the arrangement of the wavelength conversion layer on the radiation-emitting layer sequence, by embossing, etching, roughening or laser ablation or a combination thereof.

[0027] Alternatively or additionally, a further layer can be applied to the wavelength conversion layer, in which the surface structure is formed. The further layer can, for example, comprise a material as described above in connection with the matrix material, such as a polymer material. The wavelength conversion layer with the surface structure can be arranged on the radiation-emitting layer sequence in such a way that the surface of the wavelength conversion layer with the surface structure is a surface facing away from the radiation-emitting layer sequence in the beam path of the primary radiation and secondary radiation.

[0028] Furthermore, the wavelength conversion layer can be manufactured in any size and its size can be changed by cutting, punching, breaking, or sawing. In particular, this allows the size of the wavelength conversion layer to be adapted to the size, particularly the areal extent, of the radiation-emitting layer sequence. This can, for example, reduce production costs, especially for small component sizes or component sizes that vary during the production process.

[0029] Furthermore, at least one second wavelength conversion layer can be provided. To provide this, the at least one second wavelength conversion layer can be produced using a method that includes one or more features of the method steps mentioned above with regard to the first wavelength conversion layer.

[0030] Furthermore, a plurality of identical or different wavelength conversion layers can be provided, which can be arranged next to one another or one above the other as a layer stack in the beam path of the primary radiation. For this purpose, wavelength conversion layers can be arranged next to one another or one above the other as a layer stack before or after the arrangement on the radiation-emitting layer sequence and glued or laminated to one another. Alternatively or additionally, the first and the at least one second wavelength conversion layer can be arranged on different surfaces of the radiation-emitting layer sequence. If the wavelength conversion layers are applied in a laterally structured manner, for example, pictorial information such as characters, letters and / or pictograms can be represented by a layer stack with several different wavelength conversion layers.

[0031] In one embodiment of the optoelectronic component, the radiation-emitting layer sequence is an organic radiation-emitting layer sequence, in particular an organic radiation-emitting diode (OLED). An organic radiation-emitting layer sequence or an OLED can, for example, have a first electrode on a substrate. A functional region with one or more functional layers made of organic materials, which can comprise the active region for emitting the primary radiation, can be applied over the first electrode. The functional layers can, for example, have electron-transport layers, electroluminescent layers, and / or hole-transport layers. A second electrode can be applied over the functional layers.

[0032] For example, the substrate can comprise glass, quartz, plastic films, metal, metal foils, silicon wafers, or another suitable substrate material. If the OLED is designed as a so-called "bottom emitter," meaning that the radiation generated in the functional layers is emitted through the substrate, the substrate can advantageously be transparent to at least part of the first radiation.

[0033] In the bottom-emitter configuration, the first electrode can advantageously also be transparent to at least part of the primary radiation. A transparent first electrode, which can be designed as an anode and thus serves as a hole-injecting material, can, for example, comprise or consist of a transparent conductive oxide. Transparent conductive oxides (TCOs) are transparent, conductive materials, typically metal oxides, such as zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide, or indium tin oxide (ITO). In addition to binary metal-oxygen compounds, such as ZnO, SnO2, or In2O3, ternary metal-oxygen compounds, such as Zn2SnO4, CdSnO3, ZnSnO3, MgIn2O4, GaInO3, Zn2In2O5, or In4SnO, also belong to the category of materials. 12or mixtures of different transparent conducting oxides belong to the group of TCOs. Furthermore, TCOs do not necessarily have a stoichiometric composition and can also be p- or n-doped.

[0034] The functional layers can comprise organic polymers, organic oligomers, organic monomers, organic small, non-polymeric molecules (“small molecules”), or combinations thereof. In particular, it can be advantageous if a functional layer is designed as a hole-transport layer in order to enable effective hole injection into an electroluminescent layer or an electroluminescent region. Tertiary amines, carbazole derivatives, conductive polyaniline, or polyethylenedioxythiophene, for example, can prove advantageous as materials for a hole-transport layer. Furthermore, it can be advantageous if a functional layer is designed as an electroluminescent layer. Suitable materials for this purpose are materials that emit radiation due to fluorescence or phosphorescence, for example polyfluorene, polythiophene, or polyphenylene, or derivatives, compounds, mixtures, or copolymers thereof.Depending on the materials in the functional layers, the generated first radiation can have individual wavelengths or ranges or combinations thereof from the ultraviolet to red spectral range.

[0035] The second electrode can be designed as a cathode and thus serve as an electron-injecting material. Aluminum, barium, indium, silver, gold, magnesium, calcium, or lithium, as well as compounds, combinations, and alloys thereof, can prove particularly advantageous as cathode materials. Additionally or alternatively, the second electrode can also be transparent, and / or the first electrode can be designed as a cathode and the second electrode as an anode. This means, in particular, that the OLED can also be designed as a "top emitter."

[0036] Furthermore, the OLED can have an encapsulation to protect the electrodes and the functional area from moisture and / or oxidizing substances such as oxygen. The encapsulation can surround the entire OLED, including the substrate. Alternatively or additionally, the substrate can form part of the encapsulation. The encapsulation can comprise one or more layers, whereby the encapsulation layers can be, for example, planarization layers, barrier layers, water and / or oxygen-absorbing layers, connecting layers, or combinations thereof.

[0037] Furthermore, the radiation-emitting layer sequence can comprise an epitaxial layer sequence, i.e., an epitaxially grown semiconductor layer sequence. The semiconductor layer sequence can be based on an inorganic material, such as InGaAlN, such as a GaN thin-film semiconductor layer sequence. InGaAlN-based semiconductor layer sequences include, in particular, those in which the epitaxially produced semiconductor layer sequence, which generally comprises a layer sequence of different individual layers, contains at least one individual layer that comprises a material from the III-V compound semiconductor material system In x Al y Ga 1-x-y N with 0 ≤ x ≤ 1, 0 ≤ y ≤ 1 and x+y ≤ 1.

[0038] Alternatively or additionally, the semiconductor layer sequence can also be based on InGaAlP, i.e. the semiconductor layer sequence has different individual layers, of which at least one individual layer is a material from the III-V compound semiconductor material system In x Al y Ga 1-x-y P with 0 ≤ x ≤ 1, 0 ≤ y ≤ 1 and x+y ≤ 1. Alternatively or additionally, the semiconductor layer sequence may also comprise other III-V compound semiconductor material systems, for example an AlGaAs-based material, or II-VI compound semiconductor material systems.

[0039] The radiation-emitting layer sequence designed as an epitaxial layer sequence can, like the organic radiation-emitting layer sequence, be arranged between the first and second electrodes on a substrate and / or have an encapsulation.

[0040] The first wavelength conversion layer and / or the at least one second wavelength conversion layer can be arranged on the surface of the substrate or the encapsulation facing away from the active region.

[0041] By means of a method having the features described above, for example, different wavelength conversion layers with different dimensions such as thickness and area as well as with different mixtures and concentrations of the wavelength conversion substance can be provided, which can be selected according to requirements and combined with other wavelength conversion layers in order to produce differently colored optoelectronic components.

[0042] Further advantages and advantageous embodiments and developments of the invention will become apparent from the following in connection with the Fig. 1A to 4C described embodiments.

[0043] They show: Fig. 1A to 1E are schematic representations of a method for producing an optoelectronic component according to an example, Fig. 2A to 2E are schematic representations of a method for producing an optoelectronic component according to an embodiment, Fig. 3A to 3C are schematic representations of a method for producing an optoelectronic component according to yet another example, and Fig. 4A to 4D are schematic representations of optoelectronic components according to further embodiments.

[0044] In the exemplary embodiments and figures, identical or similarly functioning components may be provided with the same reference numerals. The illustrated elements and their relative sizes are generally not to be considered to scale; rather, individual elements, such as layers, components, structural elements, and regions, may be exaggeratedly thick or oversized for clarity and / or clarity.

[0045] The following figures show a radiation-emitting layer sequence 1 comprising a substrate 11 on which a first electrode 12, functional layers with an active region 13, and a second electrode 14 are arranged. By applying an electric current between the first and second electrodes 12, 14, the active region emits electromagnetic blue-colored primary radiation. An encapsulation 15 is arranged on the substrate 11 above the electrodes 12, 14 and the active region 13, which encapsulates the electrodes 12, 14 and the active region 13, together with the substrate 11, from damaging influences such as oxygen and / or moisture.

[0046] The radiation-emitting layer sequence 1 can be embodied either as an organic radiation-emitting layer sequence, in particular as an organic light-emitting diode (OLED), or as an inorganic radiation-emitting layer sequence, in particular with an inorganic epitaxial layer sequence, as described in the general section. Purely by way of example, the following exemplary embodiments show an OLED as the radiation-emitting layer sequence 1, which is embodied as a bottom emitter.

[0047] In the example according to the Fig. 1A to 1E, a method for producing an optoelectronic component 100 is shown. In a first method step in Fig. 1A, a radiation-emitting layer sequence 1 as described above is provided.

[0048] In the Fig. 1B to 1D show process steps for providing a first wavelength conversion layer 2. As shown in Fig. 1B, a carrier substrate 20, which in the illustrated embodiment is embodied as a plastic film, is provided. A wavelength conversion substance 21 is sprayed onto the carrier substrate 20. The wavelength conversion substance 21 is suitable for converting a portion of the primary radiation into electromagnetic yellow-colored secondary radiation. By mixing the blue primary radiation and the yellow secondary radiation, the optoelectronic component 100 can create a white-colored luminous impression during operation.

[0049] In a further process step according to Fig. 1C, a binder material 22, in the embodiment shown a silicone or epoxy resin, is applied to the carrier substrate 20 and the wavelength conversion material 21 and in a further process step according to Fig. 1D, thereby providing the first wavelength conversion layer 2. In the process steps according to the Fig. 1B to 1D, the processes described in the general section can be applied, and materials that would damage the radiation-emitting layer sequence 1 can be used. The binder 22 can be curable, for example, using UV light. Because the wavelength conversion layer 2 is produced and provided independently of the radiation-emitting layer sequence 1, simpler and more cost-effective production can be achieved, since the process steps do not have to be adapted for compatibility with the radiation-emitting layer sequence 1.

[0050] If necessary, the first wavelength conversion layer 2 can be adapted to the radiation-emitting layer sequence by cutting its area (not shown).

[0051] In a further process step according to Fig. 1E, the first wavelength conversion layer 2 is arranged on the radiation-emitting layer sequence 1 on the surface of the substrate facing away from the active region and bonded by means of an adhesive layer 3 made of an epoxy resin.

[0052] In the embodiment according to the Fig. 2A to 2E, a further method for producing an optoelectronic component 200 is shown. In a first method step in Fig. 2A, a radiation-emitting layer sequence 1 as described above is provided.

[0053] In the Fig. 2B and Fig. 2C shows method steps for providing a first wavelength conversion layer 2. As in Fig. 2B, a carrier substrate 20 is provided, which in the illustrated embodiment is designed, for example, as a glass plate or plastic film. A previously prepared mixture of a matrix material 22, which comprises a transparent polymer as described in the general part, and a wavelength conversion substance 21 is applied to the carrier substrate 20 and formed into a layer. By means of a curing step, as shown in Fig. 2C, the first wavelength conversion layer 2 is produced.

[0054] In a further process step ( Fig. 2D), a surface structure 50 in the form of microprisms is produced in a surface 5 of the wavelength conversion layer 2, namely a surface of the matrix material 22.

[0055] In a further process step according to Fig. 2E, the wavelength conversion layer 2 is arranged and fixed on the previously provided radiation-emitting layer sequence 1 by means of clamping devices 4.

[0056] In the example according to the Fig. 3A to 3C show a further method for producing an optoelectronic component 300. In a first method step in Fig. 3A, a radiation-emitting layer sequence 1 as described above is provided.

[0057] According to a further process step in Fig. 3B, a mixture of a liquid matrix material 22 and a wavelength conversion substance 21 is provided and formed into a planar wavelength conversion layer 2 by means of a molding process 9, such as injection molding, and cured. A surface structure, as in the previous exemplary embodiment, can be created, for example, by the selected injection mold in at least one surface of the wavelength conversion layer 2 (not shown).

[0058] In a further process step according to Fig. 3C, the wavelength conversion layer 2 is laminated onto the radiation-emitting layer sequence 1 and bonded to it by applying pressure and heat. In addition, an adhesive layer (not shown) can be arranged between the radiation-emitting layer sequence and the wavelength conversion layer 2.

[0059] In the embodiments according to the Fig. 4A to 4D show further optoelectronic components 400, 401, 402 and 403 which can be manufactured using one of the previously shown methods.

[0060] The optoelectronic component 400 comprises a layer stack comprising a first wavelength conversion layer 2 and a second wavelength conversion layer 2', which are first produced and provided, then arranged and laminated as a layer stack, and then arranged on the radiation-emitting layer stack 1.

[0061] In addition to the first wavelength conversion layer 2 on one surface of the radiation-emitting layer sequence 1, the optoelectronic component 401 has a second wavelength conversion layer 2' on a further surface of the radiation-emitting layer sequence 1. Such a design is particularly suitable for a radiation-emitting layer sequence 1 that emits on both sides, for example, for an OLED that is designed as both a top emitter and a bottom emitter. Depending on the choice of wavelength conversion material in the first and second wavelength conversion layers 2, 2', an observer can experience the same or a different luminous impression on both sides.

[0062] The optoelectronic component 402 according to the Fig. 4C has a first wavelength conversion layer 2 and a second wavelength conversion layer 2', which are arranged side by side on the radiation-emitting layer sequence 1. Thus, for example, by selecting different wavelength conversion materials for the first and second wavelength conversion layers 2, 2', respectively, in different regions of the optoelectronic component 402, a different luminous impression can be created for an observer.

[0063] The optoelectronic component 403 according to Fig.4D, like the optoelectronic component 400 according to FIG. 400, has a layer stack with the wavelength conversion layer 2 and the wavelength conversion layer 2', wherein, in the case of the wavelength conversion material, each of the wavelength conversion layers 2 and 2' covers only a portion of the substrate. This enables multicolored, structured radiation for conveying pictorial and / or symbolic information.

[0064] In the illustrated embodiments and examples, the first and second wavelength conversion layers 2, 2' can be produced using the same or different method steps described above and can comprise the same or different matrix materials, binder materials, and / or wavelength conversion substances. In addition to the respective first wavelength conversion layers 2 and 2' of the illustrated embodiments and examples, further wavelength conversion layers and layer stacks with wavelength conversion layers can be arranged in the beam path of the primary radiation of the radiation-emitting layer sequence 1.

Claims

[1] A method for producing an optoelectronic component, comprising the steps: A) providing a radiation-emitting layer sequence (1) with an active region (13) which emits electromagnetic primary radiation during operation, B) providing a first wavelength conversion layer (2) which converts the primary radiation at least partially into electromagnetic secondary radiation and C) Arranging the first wavelength conversion layer (2) on the radiation-emitting layer sequence (1) in the beam path of the primary radiation, wherein - in step C, the first wavelength conversion layer (2) is arranged on the radiation-emitting layer sequence (1) by means of a combination of clamping with gluing or lamination, - a substrate (11) of the radiation-emitting layer sequence (1) is arranged between the first wavelength conversion layer (2) and the active region (13), and - clamping devices (4) are arranged on the substrate (11). [2] Method according to the preceding claim, in which step B comprises the following substeps: B1) applying a wavelength conversion substance (21) to a carrier substrate (20), B2) Applying a binder (22) to the carrier substrate (20) and B3) Hardening the binder (22) to fix the wavelength conversion material (21). [3] Method according to the preceding claim, in which - in step B1 the wavelength conversion substance is applied by spraying, printing or dusting. [4] Method according to claim 1, wherein step B comprises the following substeps: B1') Providing a mixture of a wavelength conversion substance (21) and a matrix material (22), B2') applying the mixture to a carrier substrate (20), B3') Curing the mixture. [5] Method according to claim 1, wherein step B comprises the following substeps: B1'') Providing a mixture of a wavelength conversion substance (21) and a matrix material (22), B2'') Forming (9) a film or plate from the mixture, B3'') Curing the mixture to the first wavelength conversion layer (2). [6] Method according to the preceding claim, wherein the molding (9) in step B2'' is carried out by at least one of injection molding, transfer molding, compression molding, extrusion, rolling and film drawing. [7] A method according to any one of claims 2 to 6, wherein the curing is carried out thermally, by irradiation with light, by irradiation with electrons or by chemical reaction. [8] Method according to one of the preceding claims, in which step B before method step C comprises the following sub-step: B4) Creating a surface structure (50) in at least one surface (5) of the wavelength conversion layer (2). [9] Method according to the preceding claim, wherein in step B4 roughenings, trenches, prisms, lenses or truncated cones are produced as surface structures (50). [10] Method according to claim 8 or 9, wherein in step B4 the surface structures (50) are produced by at least one of embossing, etching, roughening or laser ablation. [11] Method according to one of the preceding claims, in which step B comprises the following further sub-step: B5) Changing the size of the first wavelength conversion layer (2) by cutting, punching, breaking or sawing. [12] Method according to one of claims 2 to 4, wherein in step B only areas of the carrier substrate are coated with the wavelength conversion substance. [13] Method according to one of the preceding claims, in which steps B and C are additionally carried out for at least one second wavelength conversion layer (2'). [14] Method according to the preceding claim, in which the first wavelength conversion layer (2) and the at least one second wavelength conversion layer (2') are arranged on mutually different surfaces of the radiation-emitting layer sequence (1) in the beam path of the primary radiation. [15] Method according to claim 13, wherein the first wavelength conversion layer (2) and the at least one second wavelength conversion layer (2') are arranged one above the other on the radiation-emitting layer sequence (1) in the beam path of the primary radiation.

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