Optoelectronic semiconductor chip and method for manufacturing an optoelectronic semiconductor chip

Abstract

Optoelectronic semiconductor chip (100) with - an epitaxial layer sequence (102) comprising a doped epitaxial layer (104) with a first region (116) and a second region (118) and a protected structure (108, 106), wherein the first region (116) of the doped epitaxial layer (104) completely covers the protected structure (108, 106) and wherein an outer surface (119) of the doped epitaxial layer (104) has a first roughness in the first region (116) and a second roughness in the second region (118), and wherein the protected structure (108, 106) has at least one contact breakthrough (106), and the first area (116) is covered by a protective mask (120) and the protective mask (120) is applied to the outer surface (119) over the at least one contact breakthrough (106).

Description

[0001] The present invention relates to an optoelectronic semiconductor chip and a method for manufacturing an optoelectronic semiconductor chip.

[0002] Documents US 2009 / 0 159 908 A1, DE 10 2008 062 933 A1 and US 2005 / 0 161 696 A1 describe various examples of optoelectronic semiconductor devices.

[0003] Optoelectronic semiconductor chips can emit electromagnetic radiation. Optoelectronic semiconductor chips have a sequence of epitaxial layers. This sequence can include a doped epitaxial layer. The electromagnetic radiation can be coupled out of the optoelectronic semiconductor chip via an outer surface of the doped epitaxial layer. The outer surface of the doped epitaxial layer can be roughened. The roughened surface can have a pyramidal structure. The pyramidal structure is necessary or advantageous to increase the coupling efficiency of electromagnetic radiation from the optoelectronic semiconductor chip. The doped epitaxial layer of the epitaxial layer sequence can be electrically contacted via so-called contact breakdowns. For electrical conductivity, these contact breakdowns may contain, for example, silver.The contact breakdowns at least partially penetrate the epitaxial layer sequence from the side of the epitaxial layer facing away from the doped layer. The necessary roughening of the outer surface of the doped epitaxial layer thins the doped layer. Above the contact breakdowns, the doped epitaxial layer can be so thin that the breakdowns are at least partially exposed. This also exposes the silver. Exposed contact breakdowns render the optoelectronic semiconductor chip unusable. The exposed silver at the contact breakdowns is detectable during a general optical inspection of the semiconductor chip.

[0004] One object of the invention is to provide an optoelectronic semiconductor chip in which structures such as the contact penetrations are protected even after roughening and at the same time electromagnetic radiation can be efficiently coupled out.

[0005] This problem is solved by an optoelectronic semiconductor chip according to the independent product claim and by a method for manufacturing an optoelectronic semiconductor chip according to the independent method claim.

[0006] Further developments and advantageous embodiments of the optoelectronic semiconductor chip and the method for manufacturing the optoelectronic semiconductor chip are specified in the dependent claims. Exemplary embodiments

[0007] Various embodiments of an optoelectronic semiconductor chip feature a sequence of epitaxial layers. This sequence includes a doped epitaxial layer. The doped epitaxial layer comprises a first region and a second region. The epitaxial layer sequence features a protected structure. The first region of the doped epitaxial layer completely covers the protected structure. An outer surface of the doped epitaxial layer exhibits a first roughness in the first region and a second roughness in the second region. This arrangement ensures that protected structures are not exposed and that, at the same time, a high output efficiency is achieved for the electromagnetic radiation generated in the epitaxial layer sequence.

[0008] The epitaxial layer sequence can be based on a GaN or InGaN layer system. An active zone is incorporated into the epitaxial layer sequence. This active zone emits electromagnetic radiation that can be coupled out of the semiconductor chip. The emission spectrum is preferably in the green to ultraviolet, and particularly preferably in the blue, spectral range. However, the emission spectrum can also be in the red to yellow spectral range.

[0009] The thickness of the epitaxial layer sequence is typically between 1 µm and 20 µm.

[0010] Roughness is a term in surface physics and describes the unevenness of a surface's height. Surface roughness can be influenced by processes such as polishing, grinding, etching, or corrosion. Several roughness measurements exist, all expressed in micrometers (µm).

[0011] The initial roughness of the outer surface of the doped epitaxial layer can be formed, in particular, by pits with depths of less than 0.5 µm. These structures can arise, for example, during a laser lift-off. In laser lift-off, a substrate can be separated from the epitaxial layer sequence that was previously grown onto the substrate by laser irradiation. Alternatively, or in addition, the initial roughness can also be formed by defects and surface flaws on the outer surface of the doped epitaxial layer. Structures such as pits, defects, or surface flaws are of little relevance for light extraction.

[0012] In one embodiment, the first region of the outer surface of the doped epitaxial layer is covered by a protective mask. The protective mask is intended to cover areas of the doped epitaxial layer that should not be further roughened during a roughening process. In this embodiment, the protective mask remains on the doped epitaxial layer after the roughening process. The protective mask can be made of silicon nitride (SiN) or silicon dioxide (SiO2). Silicon dioxide is particularly advantageous. Unlike silicon nitride, silicon dioxide hardly absorbs any electromagnetic radiation in the blue and green spectral ranges. In the red spectral range, however, both silicon nitride and silicon dioxide are only weak absorbers, which is why both materials are used in active zones that emit electromagnetic radiation in the red spectral range.

[0013] According to at least one embodiment of an optoelectronic semiconductor chip, it comprises an epitaxial layer sequence comprising a doped epitaxial layer with a first region and a second region and a protected structure, wherein the first region of the doped epitaxial layer completely covers the protected structure and wherein an outer surface of the doped epitaxial layer has a first roughness in the first area and a second roughness in the second area, and wherein the protected structure has at least one contact breakthrough and the first area is covered by a protective mask and the protective mask is applied to the outer surface over the at least one contact breakthrough.

[0014] In an alternative, unclaimed embodiment, the first region of the outer surface of the doped epitaxial layer is uncovered; that is, no protective mask is placed on the first region. This is achieved by removing the protective mask after the roughening process. This is advantageous because no chemicals used for roughening the outer surface of the doped epitaxial layer can leave residues on the protective mask. Furthermore, the problem of light absorption in the protective mask is avoided.

[0015] In a preferred embodiment, the first roughness of the first region covering the contact penetrations is formed by pyramidal depressions with etch depths of up to 1 µm. This is advantageous because it allows electromagnetic radiation to be efficiently coupled out of the epitaxial layer sequence, even over the protected structures. The etch depth of a maximum of 1 µm ensures that no protected structures are exposed. In the present application, the roughness is specified at the mean step height generated by the etched, pyramidal depressions.

[0016] In a preferred embodiment, the second roughness on the second region is formed by pyramid-shaped depressions with etch depths of 0.5 µm to 4 µm. The side faces of the pyramid-shaped depressions form an angle of 35° to 75°, preferably 50° to 70°, with the plane of the epitaxial layer sequence. The respective angle is determined by the crystal orientation and the chemical etching. The combination of etch depths in the µm range with angles between 35° and 75° is particularly advantageous because it allows a particularly large proportion of electromagnetic radiation to be coupled out from the epitaxial layer sequence. This is because the greater the etch depths, the larger the pyramids are produced. The larger the pyramids, the more light can be coupled out.This relationship holds true only if the emitted electromagnetic radiation in the medium of the epitaxial layer sequence has a shorter wavelength than the diameter of the pyramid bases. For example, the epitaxial layer sequence can be based on a GaN system. With an electromagnetic radiation wavelength of approximately 0.4 µm, the refractive index of GaN is about 2.5. Consequently, the wavelength of the electromagnetic radiation in the medium is approximately 0.16 µm. Pyramids with a base diameter greater than approximately 0.16 µm can couple out the electromagnetic radiation.

[0017] In a preferred embodiment, the protected structures have a plurality of contact penetrations. These penetrations traverse the epitaxial layer sequence parallel to its growth direction and establish electrical contact with the doped epitaxial layer. This is advantageous because the doped epitaxial layer can be energized without obscuring light emitted from the active zone of the epitaxial layer sequence. This is because no electrical contact structures are required on the outer surface of the doped epitaxial layer.

[0018] In a preferred embodiment, the doped epitaxial layer is an n-doped layer. The n-doped layer is connected to an n-contact of the optoelectronic semiconductor chip via electrically conductive contact breakthroughs.

[0019] In a preferred embodiment, the protected structures feature the circumferential edge of the epitaxial layer sequence. This is particularly advantageous because the circumferential edge is protected from the etching chemicals used for roughening. Consequently, the circumferential edge has a clearly defined shape, good structural integrity, and a minimal length. A smooth edge is essential for the automated inspection process of the optoelectronic semiconductor chip. The protected circumferential edge of the epitaxial layer sequence is also helpful when etching the mesac edge with phosphoric acid. A SiO₂ passivation layer can cover the doped epitaxial layer. The main purpose of the passivation is to cover the mesac edge to prevent a short circuit. Protecting the circumferential edge reduces the likelihood of the phosphoric acid under-etching or creeping beneath the SiO₂ passivation. As a result, fewer holes are formed in the doped epitaxial layer.Advantageously, the entire epitaxial layer sequence at the edge can be etched with phosphoric acid without attacking the doped epitaxial layer.

[0020] Various embodiments describe a method for manufacturing an optoelectronic semiconductor chip. First, an epitaxial layer sequence is provided. This sequence is grown on a substrate, in particular silicon carbide (SiC), silicon (Si), or sapphire (Al₂O₃). The surface of the epitaxial layer sequence facing away from the substrate is bonded to a support, in particular comprising germanium. The epitaxial layer sequence is then lifted off the substrate by laser irradiation. The epitaxial layer sequence has a doped epitaxial layer with an outer surface. Subsequently, a structured protective mask is applied to the outer surface, the protective mask being applied to the outer surface over at least one contact breakthrough, according to at least one embodiment. Finally, the doped epitaxial layer is etched. Potassium hydroxide (KOH) can be used as the etching agent.In this process, a first region with a first roughness remains on the area of ​​the outer layer covered by the protective mask. This is advantageous because the epitaxial layer sequence is not thinned in this first region. Firstly, this prevents the unwanted exposure of protected structures. Secondly, the epitaxial layer sequence can be designed to be thinner before etching. While etching thinner epitaxial layer sequences generally results in shallower pyramids, this reduces the required amount of expensive epitaxial layer material. On the area of ​​the outer surface not covered by the protective mask, a second region with a second roughness is created. This is advantageous because etch depths in the micrometer range are generated in this second region. These etch depths are a prerequisite for the formation of pyramids that enable the efficient coupling out of electromagnetic radiation.A particular advantage is that the roughening times are significantly longer compared to processes that etch without a protective mask. This allows for greater etching depths and thus larger pyramids. This is beneficial because it enables more light to be extracted through the pyramids.

[0021] In a preferred embodiment, the protective mask is applied to the outer surface over a plurality of contact openings. As mentioned above, this is advantageous because the contact openings are not unintentionally exposed during the etching step.

[0022] In a preferred embodiment, the protective mask is applied to the circumferential edge of the epitaxial layer sequence. This is advantageous because it protects the mesac edge when etching it with phosphoric acid.

[0023] In an unclaimed embodiment, after etching the doped epitaxial layer with KOH, the protective mask is removed from the first region. This is advantageous because it allows the first region of the outer surface to be re-etched. This increases the extraction efficiency for the electromagnetic radiation generated in the epitaxial layer sequence. Brief description of the drawings

[0024] Various embodiments of the solution according to the invention are explained in more detail below with reference to the drawings. Identical, similar, or similarly functioning elements are designated with the same reference numerals in the figures. The figures and the relative sizes of the elements depicted in the figures are not to be considered to scale. Rather, individual elements may be exaggerated in size or reduced in size for better clarity and understanding. Fig. Figure 1a shows a cross-sectional view of an example of an optoelectronic semiconductor chip; Fig. 1b shows a rough schematic top view of the example from Fig. 1a; Fig. Figure 2 shows a flowchart for the production of an optoelectronic semiconductor chip; Fig. 2a, Fig. Figure 2b shows sections in cross-sectional view of intermediate products of the manufacturing process of an optoelectronic semiconductor chip; Fig. 2c, Fig. 2d and Fig. 2e show excerpts of sectional views of optoelectronic semiconductor chips; Fig. Figure 3 shows a cross-sectional view of an example of an optoelectronic semiconductor chip; Fig. Figure 4a shows a top view of an embodiment of an optoelectronic semiconductor chip; Fig. Figure 4b shows a cross-sectional view of an embodiment of an optoelectronic semiconductor chip; Fig. 5 shows pyramids in the doped epitaxial layer of the epitaxial layer sequence; Fig. 6a shows the angular range in which light can leave a medium; Fig. Figure 6b shows a pyramid structure from which light emerges. Examples of implementation

[0025] Fig. Figure 1a shows a cross-sectional view of an example of an optoelectronic semiconductor chip 100 without protected areas. An epitaxial layer sequence 102, comprising a doped epitaxial layer 104, an active zone 110, and another doped epitaxial layer 112, is arranged on a current-expansion layer 122. The current-expansion layer 122 has a silver mirror and an encapsulation of the silver mirror. The encapsulation material contains gold. The current-expansion layer 122 is arranged on an electrically insulating passivation 114. This is followed by an electrically conductive material 124 containing silver. Next comes an electrically conductive substrate 126, for example, made of germanium. A first contact 128 is applied to the side of the substrate 126 facing away from the epitaxial layer sequence. Contact breakthroughs 106 are arranged through the epitaxial layer sequence 102.The electrical connection between the first contact 128 and the doped epitaxial layer 104 is established through the contact openings 106. For this purpose, the contact openings 106 are filled with the electrically conductive material 124 and insulated from the further doped epitaxial layer 112 by the passivation 114. A second contact 130 establishes the electrical contact to the further doped epitaxial layer 112 via the current-expansion layer 122. The doped epitaxial layer 104 has pyramid-shaped depressions that extend to the contact openings 106. This results in exposed areas 107 of the electrically conductive material 124 on the contact openings 106. Consequently, the electrically conductive material 124, which contains silver, is at least partially exposed in the contact openings 106. The exposed silver can undergo electromigration. This renders the optoelectronic semiconductor chip 100 unusable for further processing steps.The circumferential edge 108 of the epitaxial layer sequence 102 also exhibits depressions which, while not rendering the optoelectronic semiconductor chip 100 unusable, complicate its automatic inspection. Furthermore, the mesa edge of the optoelectronic semiconductor chip is poorly protected, increasing the probability of chip failure.

[0026] Fig. 1b shows a rough schematic top view of the example from Fig. 1a. The contact breakdowns 106 are visible. The electrically conductive material 124 is exposed. The optoelectronic semiconductor chip 100 is therefore unusable. In addition, the circumferential edge 108 of the epitaxial layer sequence 102 exhibits a frayed structure. This results in a very extended edge 108 of the optoelectronic semiconductor chip 100. This increases the failure probability of the optoelectronic semiconductor chip 100.

[0027] Fig. Figure 2 shows a flowchart of two alternative manufacturing processes, A and B, for an optoelectronic semiconductor chip. The manufacturing process can be broken down into steps S1 to S5. Steps S4 and S5 are optional.

[0028] In step S1, an epitaxial layer sequence 102 is provided. Fig. Figure 2a shows the result of step S1. The doped epitaxial layer 104 with an outer surface 119 is followed by the active zone 110. The active zone 110 is followed by another doped epitaxial layer 112. A contact breakthrough 106 completely traverses the second doped epitaxial layer 112 and the active zone 110 and terminates in the doped epitaxial layer 104. The contact breakthrough 106 is filled with electrically conductive material 124. An insulating passivation 114 is arranged between the contact breakthrough 106 and the epitaxial layer sequence 102. The outer surface 119 of the doped epitaxial layer 104 exhibits a first roughness, which is not shown graphically. The first roughness is formed, in particular, by pit-shaped depressions with depths of up to approximately 0.5 µm. These structures can be created during laser lift-off, in which the growth substrate is separated from the epitaxial layer sequence 102 by irradiation with a laser.The first roughness can alternatively or additionally be formed by defects and surface flaws on the outer surface 119 of the doped epitaxial layer 104. Due to its shallow depth, this first roughness is hardly relevant for light extraction. Therefore, the first roughness in . Fig. 2a not shown.

[0029] In step S2, a protective mask (120) is applied. Fig. Section 2 shows two alternative routes, S2a and S2b, for carrying out process step S2. Both routes lead to the same intermediate product, as shown in Section 2. Fig. 2b.

[0030] Alternative S2a is divided into the following steps: In step S2a.1, a protective layer is applied over the entire surface of the doped epitaxial layer 104. In step S2a.2, photoresist is applied to the areas of the doped epitaxial layer 104 to be protected, i.e., over the circumferential edge 108 and over the contact openings 106. In step S2a.3, the areas of the protective layer not covered by photoresist are removed. In step S2a.4, the photoresist is removed.

[0031] Alternative S2b is divided into the following steps: In step S2b.1, photoresist is applied in a structured manner to the doped epitaxial layer 104, leaving the areas to be protected unprotected. In step S2b.2, a protective layer is applied over the entire surface of the doped epitaxial layer 104. In step S2b.3, the photoresist is removed.

[0032] Fig. Figure 2b shows a section of the intermediate product in cross-sectional view after completion of step S2. The protective mask 120 is applied to the outer surface 119 of the doped epitaxial layer 104 above the protected structure 106, 108. The protective mask can consist of SiN or SiO2.

[0033] In step S3, the doped epitaxial layer 104 is etched. On the outer surface 119 of the doped epitaxial layer 104, which is covered by the protective mask 120, a first area 116 with a first roughness remains. On the area of ​​the outer surface 119 of the doped epitaxial layer 104 not covered by the protective mask 120, a second area 118 with a second roughness is created.

[0034] Fig. Figure 2c shows a section of a sectional view of the optoelectronic semiconductor chip 100 after completion of step S3. The first region 116 of the outer surface 119 is covered by a protective mask 120. The second region 118 of the outer surface 119 has a second roughness with pyramidal depressions. Etching depths between 0.5 µm and 4 µm are formed. The etching depths are represented as step heights 121 of the second region 118. The protected structure has an electrically conductive contact breakdown 106. The contact breakdown 106 traverses the epitaxial layer sequence 102 parallel to its growth direction. The contact breakdown 106 establishes electrical contact with the doped epitaxial layer 104. The doped epitaxial layer 104 can be n-doped. The protected structure also has a circumferential border 108 of the epitaxial layer sequence 102.

[0035] In optional step S4 according to a non-stressed embodiment, the protective mask 120 is removed. The protective mask 120, made of SiO2 or SiN, can be removed by an etching process with hydrofluoric acid (HF) or ammonia-buffered hydrofluoric acid (BOE).

[0036] Fig. Figure 2d shows a section of a sectional view of the optoelectronic semiconductor chip 100 after completion of step S4. Fig. 2D differs from other formats only in that it... Fig. 2c, that the protective mask 120 has been removed. The first area 116 of the outer surface 119 of the doped epitaxial layer 104 is now exposed.

[0037] In step S5, after removing the protective mask 120, the first area 116 of the doped epitaxial layer 104 is etched with KOH.

[0038] Fig. Figure 2e shows a section of a sectional view of the optoelectronic semiconductor chip 100 after completion of step S5. The first roughness on the first region 116 of the outer surface 119 of the doped epitaxial layer 104 has pyramid-shaped depressions with etch depths of up to 1 µm. This allows light to be efficiently coupled out even from regions of the doped epitaxial layer 104 that are located above the contact breakdown 106 and / or above the circumferential edge 108 of the epitaxial layer sequence 102. The etch depths are shown as the step height 117 of the first region 116 and as the step height 121 of the second region 118. The step height 117 of the first region 116, in other words the etch depth, is up to 1 µm. The step height 121 of the second area 118, in other words the etching depth, is between about 0.5 µm and about 4 µm.

[0039] Fig. Figure 3 shows a cross-sectional view of an example of an optoelectronic semiconductor chip 100. The entire optoelectronic semiconductor chip 100 is shown, which is based on the epitaxial layer sequence 102, as described in Fig. The contact openings 106 and the circumferential edge 108 of the epitaxial layer sequence 102 are completely covered by the doped epitaxial layer 104. The first region 116 of the outer surface 119 has a first roughness with depressions up to 0.5 µm. For clarity, the first roughness is not shown graphically. The second region 118 of the outer surface 119 has a second roughness with depressions in the form of pyramids 140. The pyramids 140 have a height of up to 4 µm. A first contact 128 makes contact with electrically conductive material 124 via a support 126. The electrically conductive material 124 establishes the electrical connection to the doped epitaxial layer 104 via the contact openings 106. Another doped epitaxial layer 112 is electrically connected to a second contact 130 via a current expansion layer 122.

[0040] Fig. Figure 4a shows a top view of an embodiment of an optoelectronic semiconductor chip. The circumferential edge 108 of the epitaxial layer sequence 102 and the areas of the doped epitaxial layer 104 that completely cover the contact openings 106 are covered with a protective mask 120. A section line 134 is shown along which the embodiment is cut. Fig. 4b is shown.

[0041] Fig. Figure 4b shows a cross-sectional view of an embodiment of an optoelectronic semiconductor chip. The embodiment from Fig. 4b differs from the embodiment shown in Fig. 3 simply by the fact that the protective mask 120 covers the first area 116 of the outer surface 119.

[0042] Fig. Figure 5 shows a partially roughened doped epitaxial layer 104. An exemplary contact breakdown 106, a nearly unroughened first region 116 of the outer surface 119 above the contact breakdown 106, and a roughened second region 118 of the outer surface 119 are shown. In the second region 118 of the outer surface 119, a pyramid 140 is shown as an example, selected from the multitude of pyramids of the partially roughened doped epitaxial layer 104. The outer surface 119 of the doped epitaxial layer 104 forms the interface between the optically denser medium of the optoelectronic semiconductor chip 100, in particular comprising GaN, and the optically less dense medium of air. The pyramid-shaped depressions reduce the proportion of electromagnetic radiation that is totally reflected at the outer surface 119.The side faces 146 of the pyramid-shaped depressions form an angle of 35° to 75°, preferably 50° to 70°, with the plane of the epitaxial layer sequence 102. The specific angle 144 is determined by the crystal orientation of the doped epitaxial layer 104 and the chemical etching process. With an etching depth in the micrometer range and angles 144 within the above range, pyramids are formed that are particularly suitable for the extraction of electromagnetic radiation in the visible wavelength range, i.e., wavelengths between approximately 0.3 µm and approximately 0.8 µm. The diameter 142 of the base of a pyramid 140 is also in the micrometer range. The diameter 142 is thus significantly larger than the wavelength of the electromagnetic radiation in the semiconductor medium. For example, electromagnetic radiation that has a wavelength of about 450 nm in air has a wavelength of about 200 nm in a medium of GaN with a refractive index of about 2.4.The ratio of 2 to 10 between the diameter 142 of the base of the pyramid 140 and the wavelength of the electromagnetic radiation in the medium is a mandatory prerequisite for electromagnetic radiation from the doped epitaxial layer 104 to couple into a pyramid 140. The base of the pyramid 140 has a hexagonal shape in GaN.

[0043] Fig. Figure 6a shows the angular range in which total internal reflection of light rays 152 does not occur at an outer surface 119. Light rays 152 striking the outer surface 119 of the doped epitaxial layer 104 at an angle smaller than the critical angle 148 are refracted at the interface between the optically denser medium 154 and the optically less dense medium 156. These light rays 152 can then exit the optically denser medium 154. Conversely, light rays 150 striking the outer surface 119 at an angle greater than the critical angle 148 are totally internally reflected.

[0044] In a doped epitaxial layer 104, consisting of an optically denser medium 154 made of a GaN system with a refractive index of approximately 2.4 and an optically less dense medium 156 made of air with a refractive index of 1, a critical angle 148 of approximately 25° results. The angular range in which the light can escape the optically denser medium 154 is called the "escape cone".

[0045] Fig.Figure 6b shows the outer surface 119 of the doped epitaxial layer 104, which forms the optically denser medium 154, with a pyramidal structure 140. Due to the pyramidal structure, the first light ray 150 now strikes the outer surface 119 within the critical angle 148 for total internal reflection. The first light ray 150 is no longer totally reflected and exits the doped epitaxial layer 104 and thus the optoelectronic semiconductor chip 100. Overall, more light exits the pyramidally roughened outer surface 119 than if the outer surface 119 were approximately planar. Reference symbol list 100 semiconductor chips 102 Epitaxial layer sequence 104 dotted epitaxial layer 106 Contact Breakdown 107 exposed area of ​​electrically conductive material in the contact breakthrough 108 circumferential edge of the epitaxial layer sequence 110 active zone 112 additional dotted epitaxial layers 114 Passivation 116 first area of ​​the outer surface 117 step height in the first area 118 second area of ​​the outer surface 119 outer surface of the doped epitaxial layer 120 protective masks 121 step height in the second area 122 Current expansion layer 124 electrically conductive material 126 carriers 128 first contact 130 second contact 132 Bond wire 134 Section line 140 Pyramid 142 Diameter of the base of a pyramid 144 Angles that the lateral face of a pyramid encloses with the plane of the epitaxial layer sequence 146 Side surface of a pyramid 148 Critical angles for total internal reflection 150 first light beam 152 second light beam 154 optically denser medium 156 optically thinner medium

Claims

[1] Optoelectronic semiconductor chip (100) with - an epitaxial layer sequence (102) comprising a doped epitaxial layer (104) with a first region (116) and a second region (118) and a protected structure (108, 106), wherein the first region (116) of the doped epitaxial layer (104) completely covers the protected structure (108, 106) and wherein an outer surface (119) of the doped epitaxial layer (104) has a first roughness in the first region (116) and a second roughness in the second region (118), and wherein the protected structure (108, 106) has at least one contact breakthrough (106), and the first area (116) is covered by a protective mask (120) and the protective mask (120) is applied to the outer surface (119) over the at least one contact breakthrough (106). [2] Optoelectronic semiconductor chip according to claim 1, wherein the first roughness is formed by, in particular, hole-shaped depressions with depths of less than about 0.5 µm, defects and surface defects. [3] Optoelectronic semiconductor chip according to claim 1, wherein the first roughness is formed by pyramidal depressions with etching depths up to about 1 µm. [4] Optoelectronic semiconductor chip according to one of the preceding claims, wherein the second roughness is formed by pyramidal depressions with etching depths of about 0.5 µm to about 4 µm. [5] Optoelectronic semiconductor chip according to claim 3 or 4, wherein the side surfaces of the pyramidal depressions form an angle of 35° to 75°, preferably 50° to 70°, with the plane of the epitaxial layer sequence (102). [6] Optoelectronic semiconductor chip according to one of the preceding claims, wherein the at least one contact breakthrough (106) traverses the epitaxial layer sequence (102) parallel to its growth direction and establishes electrical contact with the doped epitaxial layer (104). [7] Optoelectronic semiconductor chip according to one of the preceding claims, wherein the protected structure has a circumferential edge (108) of the epitaxial layer sequence (102). [8] Optoelectronic semiconductor chip according to one of the preceding claims, wherein the doped epitaxial layer (104) is n-doped. [9] Method for manufacturing an optoelectronic semiconductor chip (100) comprising the following steps: - Providing an epitaxial layer sequence (102) comprising a doped epitaxial layer (104) with an outer surface (119); - Applying a structured protective mask (120) to the outer surface (119), wherein the protective mask (120) is applied to the outer surface (119) over at least one contact breakthrough (106); - Etching of the doped epitaxial layer (104), wherein a first area (116) with a first roughness remains on the outer surface (119) covered by the protective mask (120), and wherein a second area (118) with a second roughness is produced on the area of ​​the outer surface (119) not covered by the protective mask (120), and wherein the protective mask (120) remains on the doped epitaxial layer (104) after etching. [10] Method according to claim 9, wherein the protective mask (120) is applied to the outer surface (119) over a circumferential edge (108) of the epitaxial layer sequence (102).

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