Method for processing a wafer and layer stack

The method of forming a sacrificial area and channels in a layer stack addresses the mechanical barrier issue of support rings, enabling efficient and stable wafer processing with reduced damage and increased process flexibility.

DE102016112976B4Active Publication Date: 2026-06-18INFINEON TECHNOLOGIES AG
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Patent Information

Authority / Receiving Office
DE · DE
Patent Type
Patents
Current Assignee / Owner
INFINEON TECHNOLOGIES AG
Filing Date
2016-07-14
Publication Date
2026-06-18

AI Technical Summary

Technical Problem

Processing thin wafers with a support ring poses challenges due to the ring acting as a mechanical barrier for liquids, leading to inhomogeneous material removal and increased risk of component damage during processing, limiting process variation and requiring additional protective measures.

Method used

A method involving a layer stack with a sacrificial area of lower mechanical and chemical resistance, where a depression is formed in the support layer to expose the sacrificial area, and channels are created using a processing fluid to reduce the barrier effect without compromising stiffening.

Benefits of technology

This approach facilitates easier processing with liquids, reduces the risk of component damage, and provides greater process freedom, allowing for more efficient and stable wafer processing without additional protective measures.

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Abstract

Method for processing a wafer, comprising the method: • Forming (200a) a layer stack (251) comprising a support layer (202) and a wear layer (204) and a sacrificial area (206) between them, which has a lower mechanical and / or chemical resistance to a processing fluid than the support layer (202) and the wear layer (204); • wherein the supporting layer (202) has a depression (208) which exposes the sacrificial area (206); • Forming (200c) at least one channel (210) in the exposed sacrificial area (206) using the processing fluid, wherein the channel (210) connects the depression (208) to an outer part of the layer stack (251).
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Citation Information

Patent Citations

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