Electronic component

Abstract

Electronic component (1), comprising: a first and a second element substrate (5, 6), a first functional element section (2) formed on the first element substrate (5) and containing at least one first functional electrode (15), a second functional element section (3) formed on the second element substrate (6) and containing at least one second functional electrode (16), and a support layer (20) which forms a first cavity (21) above the first functional electrode (15) with the first and second element substrate (5, 6), wherein a second cavity (22) is arranged above the second functional electrode (16) on the second element substrate (6), wherein the second element substrate (6) has a first main surface (6a) arranged on one side opposite the side of the first cavity (21), and has a second main surface (6b) arranged on the side of the first cavity (21), and wherein the second functional electrode (16) is formed on the first main surface (6a), wherein the electronic component further comprises: a first conductive layer (4) which is arranged on the second main surface (6b) and which is connected to the earth potential, wherein the first conductive layer (4) of the first functional electrode (15) is located opposite the first cavity (21) and wherein the first conductive layer (4) overlaps at least a part of the first and second functional electrodes (15, 16) in a top view.

Description

TECHNICAL AREA OF INVENTION

[0001] The present invention relates to an electronic component comprising several functional element sections. BACKGROUND OF THE INVENTION

[0002] Electronic components containing multiple functional element sections are still widely used today.

[0003] JP 5300471 B2 discloses an electronic component comprising a first functional element section and a second functional element section arranged on the first functional element section. According to the teaching of JP 5300471 B2, a cavity exists between a first substrate on which the first functional element section is arranged and a second substrate on which the second functional element section is arranged, and the first and second functional element sections are sealed within the cavity. Furthermore, according to JP 5300471 B2, the first and second functional element sections are configured within the cavity such that they face each other. The first and second functional element sections each consist, for example, of a surface acoustic wave (SAW) resonator or a film bulk acoustic resonator (FBAR).

[0004] In an electronic component disclosed in JP 5300471 B2, which contains several functional element sections, a large stray capacitance can occur between the functional element sections, which degrades the characteristic curves, such as a filter characteristic curve.

[0005] US 2010 / 0295151 A1 teaches a semiconductor device comprising a first substrate with a functional element section and an area with both contact terminals and a shielding layer, wherein the substrate is connected to a further substrate via the contact terminals.

[0006] The JP H06-6170 A shows a surface acoustic wave filter with a pair of components, each having a recess. The bottom sides of these components lie on opposite sides of a grounded layer.

[0007] US patent 2010 / 0045145 A1 teaches a piezoelectric component in which two substrates with electrodes and another substrate with electrodes are arranged between them such that the electrodes lie in cavities between the substrates. REVELATION OF THE INVENTION

[0008] The invention is based on the objective of providing an electronic component that is able to suppress stray capacitance and whose characteristic curves are less likely to degrade.

[0009] According to one embodiment of the present invention, an electronic component is that of claim 1 and comprises a first and a second element substrate, a first functional element section formed on the first element substrate and containing at least one first functional electrode, a second functional element section formed on the second element substrate and containing at least one second functional electrode, and a support layer forming a first cavity above the first functional electrode with the first and the second element substrate. The second element substrate has a first main surface arranged on one side opposite the side of the first cavity, and a second main surface arranged on the side of the first cavity. The second functional electrode is formed on the first main surface.The electronic component further includes a first conductive layer, which is arranged on the second main surface and connected to ground potential. The first conductive layer is located opposite the first functional electrode in the first cavity. The first conductive layer overlaps with at least a portion of the first and second functional electrodes in a top view.

[0010] According to another embodiment of the present invention, an electronic component is that of claim 2 and comprises a first and a second element substrate, a third element substrate arranged between the first and the second element substrate, a first functional element section formed on the first element substrate and containing at least one first functional electrode, a second functional element section formed on the second element substrate and containing at least one second functional electrode, a support layer forming a first cavity above the first functional electrode with the first and the third element substrate, and a first conductive layer arranged on the third element substrate and connected to ground potential. The first conductive layer is located opposite the first functional electrode in the first cavity.The first conductive layer overlaps with at least part of the first and second functional electrodes in a top view.

[0011] The electronic component can contain a second conductive layer arranged on a major surface of the first element substrate, located opposite the first functional electrode. In this case, the heat dissipation of the electronic component is further improved.

[0012] A second cavity is provided on the second element substrate above the second functional electrode.

[0013] The electronic component defined in claim 2 can include a third conductive layer arranged on a major surface of the second element substrate, which faces a second functional electrode. In this case, the heat dissipation of the electronic component is further improved.

[0014] Both the first and second functional element sections can form a device for elastic shafts.

[0015] The first element substrate can be a first piezoelectric substrate, and the second element substrate can be a second piezoelectric substrate. The first functional electrode can be a first IDT electrode, and the second functional electrode can be a second IDT electrode. Both the first and second functional element sections can form a surface acoustic wave device.

[0016] The first conductive layer can overlap at least with overlapping areas of the first and second IDT electrodes in a top view.

[0017] The first functional element section can form a receive filter, the second functional element section can form a transmit filter, and the electronic component can be formed by a duplexer that includes the transmit filter and the receive filter.

[0018] According to the present invention, it is possible to provide an electronic component that is able to suppress stray capacitance and whose characteristic curves are less likely to deteriorate.

[0019] Further details and advantages of the invention will become apparent from the following purely exemplary and non-limiting description of embodiments in conjunction with the drawing. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1A is a circuit diagram of an electronic component according to a first embodiment of the present invention. Fig. Figure 1B is a schematic top view illustrating an electrode structure of a single-port elastic wave resonator. Fig. Figures 2A to 2C are schematic top views illustrating a first functional element section, a first conductive layer, or a second functional element section. Fig. Figure 3 is a schematic cross-sectional view illustrating a section where a first and a second functional electrode are arranged in the electronic component, according to the first embodiment of the present invention. Fig. Figure 4 is a schematic cross-sectional view illustrating a section where the first and second functional electrodes are arranged in an electronic component according to a second embodiment of the present invention. Fig. Figure 5 is a schematic cross-sectional view illustrating a section where the first and second functional electrodes are arranged in an electronic component according to a third embodiment of the present invention. Fig. Figure 6 is a schematic cross-sectional view illustrating a section where the first and second functional electrodes are arranged in an electronic component according to a fourth embodiment of the present invention. Fig. Figure 7 is a schematic cross-sectional view illustrating a section where the first and second functional electrodes are arranged in an electronic component according to a fifth embodiment of the present invention. Fig. Figure 8 is a diagram showing the transfer characteristics of duplexers of an example and a comparison example. Fig. Figure 9 is a diagram showing the reception characteristics of the duplexers of the example and the comparison example. Fig. Figure 10 is a diagram showing the insulation characteristics of the duplexers of the example and the comparison example. Fig. Figure 11 is a graph showing the result of a measurement of the increasing temperature of IDT electrodes reaching the highest temperature in the duplexers of the example and the comparison example. DESCRIPTION OF PREFERRED EXECUTION FORMS

[0020] The embodiments described below are only examples, and partial substitutions or combinations of components may be possible between different embodiments. First embodiment

[0021] Fig. 1A is a circuit diagram of an electronic component according to a first embodiment of the present invention. Fig. Figure 1B is a schematic top view illustrating an electrode structure of a single-port elastic wave resonator. Fig. Figures 2A to 2C are schematic top views illustrating a first functional element section, a first conductive layer, or a second functional element section.

[0022] The electronic component 1 is a duplexer and contains a first functional element section 2, which serves as a receive filter, and a second functional element section 3, which serves as a transmit filter.

[0023] As in Fig. As illustrated in Figure 2A, the first functional element section 2 is formed on a first element substrate 5. As shown in Fig. As illustrated in Figure 2C, the second functional element section 3 is formed on a second element substrate 6. The second functional element section 3 is arranged on the first functional element section 2. A first conductive layer 4 is arranged between the first and second functional element sections 2 and 3. The positional relationship between the above-mentioned components is described in detail below.

[0024] As in Fig. As illustrated in Figure 1A, electronic component 1 includes an antenna connection 7. An impedance matching inductor L is connected between the antenna connection 7 and ground potential. A common connection 8 is connected to the antenna connection 7. The first functional element section 2, which serves as the receive filter, is formed between the common connection 8 and a receive connection 10. The second functional element section 3, which serves as the transmit filter, is formed between the common connection 8 and a transmit connection 9.

[0025] In the first functional element section 2, which serves as the receive filter, series-arm resonators S5 and S6 and parallel-arm resonators P4 and P5 are connected to the common terminal 8. Each of the series-arm resonators S5 and S6 and the parallel-arm resonators P4 and P5 consists of an elastic wave resonator. A longitudinally coupled three-interdigital transducer (3IDT) elastic wave filter section of resonator type 14 is arranged between the series-arm resonator S6 and the receive terminal 10.

[0026] In the longitudinally coupled elastic wave filter section of resonator type 14, three or more IDT electrodes of odd number are arranged close together in a row in the direction of propagation of surface sound waves propagating on the surface of the first element substrate 5, which is a piezoelectric substrate. Reflectors are arranged on both sides of the three or more IDT electrodes of odd number. In the first functional element section 2, each of the IDT electrodes that form the longitudinally coupled elastic wave filter section of resonator type 14 and the respective resonators is a first functional electrode.

[0027] In Fig. Sections 2A, in which the series-arm resonators S5 and S6, the parallel-arm resonators P4 and P5, and the longitudinally coupled filter section for elastic waves of resonator type 14 are formed, are schematically illustrated by symbols in which Xe are surrounded by substantially rectangular frames. The series-arm resonators S5 and S6, the parallel-arm resonators P4 and P5, and the longitudinally coupled filter section for elastic waves of resonator type 14 are formed on the first element substrate 5.

[0028] As in Fig. As shown in Figure 1A, the second functional element section 3, which serves as the transmit filter, has a cascade circuit configuration and contains series-arm resonators S1 to S4 and parallel-arm resonators P1 to P3, each of which is an elastic wave resonator. The series-arm resonators S1 to S4 and the parallel-arm resonators P1 to P3 each consist of a single-port elastic wave resonator.

[0029] The single-port elastic wave resonator has an electrode structure that is in Fig. Figure 1B illustrates this. An IDT electrode 11 and reflectors 12 and 13, arranged on both sides of the IDT electrode 11 in the direction of elastic wave propagation, are formed on the second element substrate, which is a piezoelectric substrate. This forms the single-port elastic wave resonator. In the first embodiment, the IDT electrode 11 is a functional electrode. In the second functional element section 3, each of the IDT electrodes 11 forming the respective resonators is a second functional electrode.

[0030] In Fig. Sections 2C contain the series-arm resonators S1 to S4 and the parallel-arm resonators P1 to P3, schematically illustrated by symbols in which Xe are surrounded by substantially rectangular frames. The series-arm resonators S1 to S4 and the parallel-arm resonators P1 to P3 are formed on the second element substrate 6. The IDT electrode, the reflectors, and the connecting leads in each elastic wave resonator can be made of a suitable metal, such as Ag, Cu, Pt, or W, or an alloy.

[0031] Fig. Figure 3 is a schematic cross-sectional view illustrating a section where the first and second functional electrodes are arranged in the electronic component, according to the first embodiment of the present invention. As shown in Fig. As illustrated in Figure 3, the first functional element section 2 is arranged on the first element substrate 5. The second functional element section 3 is arranged on the second element substrate 6. The second functional element section 3 is arranged on the first functional element section 2. The first conductive layer 4 is arranged between the first and second functional element sections 2 and 3.

[0032] The first element substrate 5 is formed in a substantially rectangular plate shape. The first element substrate 5 has a main area 5a. The first element substrate 5 is a piezoelectric substrate made of LiTaO3. A substrate made of another piezoelectric single crystal, such as LiNbO3, or a piezoelectric ceramic substrate can be used as the first element substrate 5. The first element substrate 5 is not limited to the piezoelectric substrates mentioned above. The first element substrate 5 can be a semiconductor substrate made of Si or the like.

[0033] First functional electrodes 15 are arranged on the main surface 5a of the first element substrate 5. In the first embodiment, each of the first functional electrodes 15 is a first IDT electrode. The first IDT electrode can consist of a suitable metal or alloy, such as Al, Cu, Ni, Ti, Pt, NiCr, or AlCu. The first IDT electrode can be a single-layer metal film or a multi-layer metal film in which metal or alloy layers of two or more types are laminated. In the first embodiment, the first functional electrodes 15 and the first element substrate 5 form the first functional element section 2.

[0034] Electrode connection surfaces 17a and 17b are arranged on the main surface 5a of the first element substrate 5. The electrode connection surfaces 17a and 17b are electrically connected to the first functional electrodes 15 by means of (not illustrated) wiring electrodes.

[0035] Through-hole electrodes 18a and 18b are arranged in the first element substrate 5. One end of through-hole electrode 18a is connected to electrode terminal 17a, and one end of through-hole electrode 18b is connected to electrode terminal 17b. The other end of through-hole electrode 18a is connected to a contact protrusion electrode 19a, and the other end of through-hole electrode 18b is connected to a contact protrusion electrode 19b. The contact protrusion electrodes 19a and 19b are arranged on a main surface 5b of the first element substrate 5, which is opposite the main surface 5a.

[0036] A frame-shaped first support layer 20 is arranged on the main surface 5a of the first element substrate 5. The first support layer 20 is arranged such that it covers part of the electrode connection surfaces 17a and 17b. The first support layer 20 is arranged such that it surrounds the first functional electrodes 15. The first support layer 20 consists of resin. The thickness of the first support layer 20 is greater than the thickness of the first functional electrodes 15.

[0037] The second element substrate 6 is arranged on the first support layer 20. In the electronic component 1, the first element substrate 5, the first support layer 20, and the second element substrate 6 form a first cavity 21 above the first functional electrodes 15. The first functional electrodes 15 are sealed in the first cavity 21.

[0038] The second element substrate 6 is formed in an essentially rectangular plate shape. The second element substrate 6 has a first principal surface 6a and a second principal surface 6b, which are opposite each other. The second element substrate 6 is a piezoelectric substrate made of LiTaO3. A substrate made of another piezoelectric single crystal, such as LiNbO3, or a piezoelectric ceramic substrate can be used as the second element substrate 6. The second element substrate 6 is not limited to the piezoelectric substrates mentioned above. The second element substrate 6 can be a semiconductor substrate made of Si or the like.

[0039] Second functional electrodes 16 are arranged on the first main surface 6a of the second element substrate 6. In the first embodiment, each of the second functional electrodes 16 is a second IDT electrode. The second IDT electrode can consist of a suitable metal or alloy, such as Al, Cu, Ni, Ti, Pt, NiCr, or AlCu. The second IDT electrode can be a single-layer metal film or a multi-layer metal film in which metal or alloy layers of two or more types are laminated. In the first embodiment, the second functional electrodes 16 and the second element substrate 6 form the second functional element section 3.

[0040] The first conductive layer 4 is arranged on the second main surface 6b of the second element substrate 6. The first conductive layer 4 is arranged such that it is located above the first cavity 21. Accordingly, the second main surface 6b is the main surface of the second element substrate 6 on the side of the first cavity 21.

[0041] The first conductive layer 4 is arranged such that it faces the first functional electrodes 15. The first conductive layer 4 is connected to ground potential (not illustrated). The first conductive layer 4 consists of Cu. The first conductive layer 4 can consist of a suitable metal, such as Ni, Cr, Sn, Zn, or Au, or alloy. The thickness of the first conductive layer 4 is preferably about 0.1 µm or more, and particularly preferably about 3 µm or more. The thickness of the first conductive layer 4 is preferably about 50 µm or less, and particularly preferably about 20 µm or less. If the thickness of the first conductive layer 4 is at least as large as the lower limit mentioned above, the stray capacitance described below is further suppressed. If the thickness of the first conductive layer 4 is not greater than the upper limit mentioned above, the profile of the electronic component 1 is further reduced.

[0042] As in the Fig. As illustrated in Figures 2A to 2C, in the first embodiment the first conductive layer 4 is arranged such that it has sections which overlap with the first and second functional electrodes 15 and 16 in a top view. It is sufficient if the first conductive layer 4 is arranged such that at least a portion of the first conductive layer 4 overlaps with the first and second functional electrodes 15 and 16 in a top view. If the first and second functional electrodes 15 and 16 are the IDT electrodes, the first conductive layer 4 is preferably provided such that it overlaps with overlapping areas of the IDT electrodes in a top view.

[0043] As in Fig. As shown in Figure 3, electrode connection surfaces 23a and 23b are arranged on the first main surface 6a of the second element substrate 6. The electrode connection surface 23a is electrically connected to the second functional electrodes 16 by means of (not illustrated) wiring electrodes. A through-hole electrode 24a is arranged in the first support layer 20 and the second element substrate 6. One end of the through-hole electrode 24a is connected to the electrode connection surface 23a. The other end of the through-hole electrode 24a is connected to the electrode connection surface 17a. A through-hole electrode 24b, which is connected at one end to the electrode connection surface 17b, is arranged in the first support layer 20. The other end of the through-hole electrode 24b is connected to the first conductive layer 4.The electrode connection surfaces 17a and 17b and the electrode connection surfaces 23a and 23b, the through-hole electrodes 18a and 18b and the through-hole electrodes 24a and 24b as well as the contact bump electrodes 19a and 19b each consist of a suitable metal or alloy.

[0044] A frame-shaped second support layer 25 is arranged on the first main surface 6a of the second element substrate 6. The second support layer 25 is arranged such that it covers part of the electrode connection surface 23a. The second support layer 25 is arranged such that it surrounds the second functional electrodes 16. The second support layer 25 consists of resin. The thickness of the second support layer 25 is greater than the thickness of the second functional electrodes 16.

[0045] A cover layer 26 is arranged on the second support layer 25. The cover layer 26 consists of resin. In the electronic component 1, the second element substrate 6, the second support layer 25, and the cover layer 26 form a second cavity 22 above the second functional electrodes 16. The second functional electrodes 16 are sealed in the second cavity 22.

[0046] In electronic component 1, the first conductive layer 4 is arranged between the first and second functional electrodes 15 and 16 in a lamination direction. The first conductive layer 4 is positioned such that it overlaps at least a portion of the first and second functional electrodes 15 and 16 in a top view. The first conductive layer 4 is connected to ground potential. Since the first conductive layer 4 described above is designed to function as an electromagnetic shield in electronic component 1, the stray capacitance between the first and second functional electrodes 15 and 16 is suppressed. Consequently, the probability of a deterioration of the characteristic curves in electronic component 1 is reduced.

[0047] Furthermore, in the first embodiment, the first and second functional electrodes 15 and 16 are not arranged opposite each other and are not sealed in the same space. Consequently, problems due to heat generation in the first and second functional electrodes 15 and 16 are less likely to occur, and a deterioration of the characteristic curves is less probable. In addition, the first conductive layer 4 is arranged on the second main surface 6b of the second element substrate 6, which is the main surface facing the second functional electrodes 16, so that the heat generated in the second functional electrodes 16 is dissipated more effectively. Therefore, the probability of a deterioration of the characteristic curves in the electronic component 1 is reduced even further.

[0048] The first and second functional element sections 2 and 3 are the receive filter and the transmit filter, respectively, and are devices for elastic waves. More precisely, both the first and second functional element sections 2 and 3 are surface acoustic wave devices. The first and second functional element sections 2 and 3 can be the same functional element or they can be different functional elements. The functional element can be a plate wave resonator (bulk acoustic wave (BAW) resonator) that operates with volume waves.

[0049] In the first embodiment, the receiving filter is formed on the first element substrate 5, and the transmitting filter is formed on the second element substrate 6. Or, in other words: The transmitting filter is arranged on the receiving filter. The transmitting filter can be formed on the first element substrate 5, and the receiving filter can be formed on the second element substrate 6. Or, in other words: The receiving filter can be arranged on the transmitting filter.

[0050] Furthermore, the receive filter and the series-arm resonators S1 to S4, which are part of the transmit filter, can be formed on the first element substrate 5, and the parallel-arm resonators P1 to P3 can be formed on the second element substrate 6. Duplexers for different bands can be formed on the first and second element substrates 5 and 6. For example, a BAND1 duplexer can be formed on the first element substrate 5, and a BAND3 duplexer can be formed on the second element substrate 6.

[0051] Specific examples will now be described. EXAMPLES

[0052] In one example, a copper film approximately 10 µm thick was used as the first conductive layer 4 to fabricate electronic component 1, which is a band-8 duplexer. In a comparative example, a duplexer identical to the one in the first example was fabricated, except that the first conductive layer 4 is absent.

[0053] Fig. Figure 8 is a diagram showing the transfer characteristics of the duplexers of the example and the comparison example. Fig. Figure 9 is a diagram showing the reception characteristics of the duplexers of the example and the comparison example. Fig. Figure 10 is a diagram showing the isolation characteristics of the duplexers in the example and the comparison example. Fig. 8 to Fig. In 10, each solid line represents a result of the example, and each dashed line represents a result of the comparison example. Fig. 8 to Fig. 10. A transmission band, which specifies a transmission frequency band, ranges from about 880 MHz to about 915 MHz, and a receive band, which specifies a receive frequency band, ranges from about 925 MHz to about 960 MHz. Fig. 8 to Fig. Figure 10 shows that damping characteristics in the duplexer of the example, in which the first conductive layer 4 is arranged, are improved compared to the duplexer of the comparison example.

[0054] In the duplexers of the example and the comparison example, power was also applied from transmission port 9 at a frequency of approximately 915 MHz. The power consumption of each resonator was calculated, and the increasing temperature of the IDT electrodes, which reached the highest temperature, was measured. The result is in Fig. 11 shown. As from Fig. As can be seen in Figure 11, the heat dissipation characteristics of the duplexers in the example in which the first conductive layer 4 is arranged have been improved compared to the comparison example. Second embodiment

[0055] Fig. Figure 4 is a schematic cross-sectional view illustrating a section where the first and second functional electrodes are arranged in an electronic component according to a second embodiment of the present invention.

[0056] In an electronic component 31, a second conductive layer 28 is arranged on the main surface 5b of the first element substrate 5, which faces the first functional electrodes 15. The second conductive layer 28 is connected to a contact prong electrode 19c. The second conductive layer 28 is connected to the ground potential (not illustrated). Furthermore, in the electronic component 31, the through-hole electrodes 18a and 18b are connected to the contact prong electrodes 19a and 19b, with electrode connection surfaces 27a and 27b arranged between them. The remaining details are the same as in the first embodiment.

[0057] In electronic component 31, the first conductive layer 4 is arranged between the first and second functional electrodes 15 and 16 in the lamination direction. The first conductive layer 4 is positioned such that it overlaps at least a portion of the first and second functional electrodes 15 and 16 in a top view. The first conductive layer 4 is connected to ground potential. Because the first conductive layer 4 described above is present, the stray capacitance between the first and second functional electrodes 15 and 16 is suppressed. Consequently, a deterioration of the characteristic curves in electronic component 31 is less likely.

[0058] Since the first conductive layer 4 is arranged on the second main surface 6b of the second element substrate 6, which is the main surface opposite the second functional electrodes 16, the heat generated in the second functional electrodes 16 is dissipated more effectively. Furthermore, because the second conductive layer 28 is arranged on the main surface 5b of the first element substrate 5 in the electronic component 31, the heat generated in the first functional electrodes 15 is dissipated more effectively. Accordingly, the probability of a deterioration of the characteristic curves in the electronic component 31 is reduced even further. Third embodiment

[0059] Fig. Figure 5 is a schematic cross-sectional view illustrating a section where the first and second functional electrodes are arranged in an electronic component according to a third embodiment of the present invention.

[0060] In an electronic component 41, a third element substrate 29 is arranged at the position where the second element substrate 6 is located. Fig. The first conductive layer 4 is arranged on a main surface of the third element substrate 29 on the side of the first cavity 21. In contrast, the electrode connection surfaces 23a and 23b and the second support layer 25 are arranged on a main surface of the third element substrate 29 on the side of the second cavity 22. The through-hole electrodes 24a and one through-hole electrode 24c are arranged in the third element substrate 29.

[0061] One end of the through-hole electrode 24c is connected to the first conductive layer 4. The other end of the through-hole electrode 24c is connected to the electrode contact surface 23b. The second element substrate 6 is arranged on the second support layer 25. The second and third element substrates 6 and 29 and the second support layer 25 form the second cavity 22.

[0062] The second functional electrodes 16 and electrode connection surfaces 31a and 31b are arranged on the first main surface 6a of the second element substrate 6. A third conductive layer 33 is arranged on the second main surface 6b of the second element substrate 6. Through-hole electrodes 30a and 30b are arranged in the second support layer 25. One end of the through-hole electrode 30a is connected to the electrode connection surface 23a, and one end of the through-hole electrode 30b is connected to the electrode connection surface 23b. The electrode connection surface 31a is connected to the other end of the through-hole electrode 30a, and the electrode connection surface 31b is connected to the other end of the through-hole electrode 30b. A through-hole electrode 32 is arranged in the second element substrate 6. One end of the through-hole electrode 32 is connected to the electrode connection surface 31b.The other end of the through-hole electrode 32 is connected to the third conductive layer 33. The remaining points are the same as in the first embodiment.

[0063] In electronic component 41, the first conductive layer 4 is arranged between the first and second functional electrodes 15 and 16 in the lamination direction. The first conductive layer 4 is positioned such that it overlaps at least a portion of the first and second functional electrodes 15 and 16 in a top view. The first conductive layer 4 is connected to ground potential. Because the first conductive layer 4 described above is present, the stray capacitance between the first and second functional electrodes 15 and 16 is suppressed. Consequently, a deterioration of the characteristic curves in electronic component 41 is less likely.

[0064] Since the third conductive layer 33 is arranged on the second main surface 6b of the second element substrate 6, which is the main surface opposite the second functional electrodes 16, the heat generated in the second functional electrodes 16 is dissipated more effectively. Accordingly, the probability of a deterioration of the characteristic curves in the electronic component 41 is further reduced. Fourth and fifth embodiments

[0065] Fig. Figure 6 is a schematic cross-sectional view illustrating a section where the first and second functional electrodes are arranged in an electronic component according to a fourth embodiment of the present invention. Fig. Figure 7 is a schematic cross-sectional view illustrating a section where the first and second functional electrodes are arranged in an electronic component according to a fifth embodiment of the present invention.

[0066] As in Fig. As shown in Figure 6, in an electronic component 51, the electrode connection surface 17a is connected to the electrode connection surface 27a, with a side electrode 34a arranged between them, and the electrode connection surface 17b is connected to the electrode connection surface 27b, with a side electrode 34b arranged between them. The side electrodes 34a and 34b are arranged on side surfaces of the first element substrate 5. The electrode connection surfaces 27a and 27b are connected to the contact prong electrodes 19a and 19b, respectively. Accordingly, no through-hole electrode is arranged in the first element substrate 5 in the electronic component 51. The remaining details are the same as in the first embodiment.

[0067] As in Fig.As shown in Figure 7, in an electronic component 61, the electrode connection surface 17a is connected to the electrode connection surface 23a, with a side electrode 35a arranged between them. The side electrode 35a is arranged on side surfaces of the first support layer 20 and the second element substrate 6. The electrode connection surface 17b is connected to the first conductive layer 4, with a side electrode 35b arranged between them. The side electrode 35b is arranged on a side surface of the first support layer 20. Accordingly, no through-hole electrode is arranged in the first support layer 20 and the second element substrate 6 in the electronic component 61. The remaining details are the same as in the fourth embodiment.

[0068] In electronic components 51 and 61, the first conductive layer 4 is arranged between the first and second functional electrodes 15 and 16 in the lamination direction. The first conductive layer 4 is positioned such that it overlaps at least a portion of the first and second functional electrodes 15 and 16 in a top view. The first conductive layer 4 is connected to ground potential. Because the first conductive layer 4 is present, the stray capacitance between the first and second functional electrodes 15 and 16 is suppressed. Consequently, the probability of a deterioration of the characteristic curves in electronic components 51 and 61 is further reduced.

[0069] In the fourth and fifth embodiments, the first and second functional electrodes 15 and 16 are not arranged opposite each other and are not sealed in the same space. Accordingly, the occurrence of a deterioration of the characteristic curves due to heat generation in the first and second functional electrodes 15 and 16 is also less likely. Furthermore, since the first conductive layer 4 is arranged on the second main surface 6b of the second element substrate 6, which is the main surface facing the second functional electrodes 16, the generated heat is dissipated more effectively in the second functional electrodes 16. Consequently, the probability of a deterioration of the characteristic curves in the electronic components 51 and 61 is reduced even further.

[0070] Within the framework of the invention, further modifications and developments are possible without leaving the scope of protection defined by the claims.

Claims

[1] Electronic component (1), comprising: a first and a second element substrate (5, 6), a first functional element section (2) formed on the first element substrate (5) and containing at least one first functional electrode (15), a second functional element section (3) formed on the second element substrate (6) and containing at least one second functional electrode (16), and a support layer (20) which forms a first cavity (21) above the first functional electrode (15) with the first and second element substrate (5, 6), wherein a second cavity (22) is arranged above the second functional electrode (16) on the second element substrate (6), wherein the second element substrate (6) has a first main surface (6a) arranged on one side opposite the side of the first cavity (21), and has a second main surface (6b) arranged on the side of the first cavity (21), and wherein the second functional electrode (16) is formed on the first main surface (6a), wherein the electronic component further comprises: a first conductive layer (4) which is arranged on the second main surface (6b) and which is connected to the earth potential, wherein the first conductive layer (4) of the first functional electrode (15) is located opposite the first cavity (21) and wherein the first conductive layer (4) overlaps at least a part of the first and second functional electrodes (15, 16) in a top view. [2] Electronic component (41), comprising: a first and a second element substrate (5, 6), a third element substrate (29) arranged between the first and the second element substrate, a first functional element section (2) formed on the first element substrate (5) and containing at least one first functional electrode (15), a second functional element section (3) formed on the second element substrate (6) and containing at least one second functional electrode (16), a support layer (20) which forms a first cavity (21) above the first functional electrode (15) with the first and third element substrate (5, 29), and a first conductive layer (4) arranged on the third element substrate (29) and connected to the grounding potential, wherein a second cavity (22) is arranged above the second functional electrode (16) on the second element substrate (6), wherein the first conductive layer (4) of the first functional electrode (15) is located opposite the first cavity (21), and wherein the first conductive layer (4) overlaps at least a part of the first and second functional electrodes (15, 16) in a top view. [3] Electronic component (41) according to claim 2, further comprising: a third conductive layer (33) arranged on a main surface (6b) of the second element substrate (6) opposite a second functional electrode (16). [4] Electronic component (31) according to any one of claims 1 to 3, further comprising: a second conductive layer (28) arranged on a main surface (5b) of the first element substrate (5) which is located opposite the first functional electrode (15). [5] Electronic component according to one of claims 1 to 4, wherein both the first and the second functional element section (2, 3) form a device for elastic waves. [6] Electronic component according to any one of claims 1 to 5, wherein the first element substrate (5) is a first piezoelectric substrate and the second element substrate (6) is a second piezoelectric substrate, wherein the first functional electrode (15) is a first interdigital transducer electrode and the second functional electrode (16) is a second interdigital transducer electrode, and wherein both the first and the second functional element section (2, 3) form a surface sound wave device. [7] Electronic component according to claim 6, wherein the first conductive layer (4) overlaps at least with overlapping areas of the first and the second interdigital transducer electrode in a top view. [8] Electronic component (1) according to any one of claims 1 to 7, wherein the first functional element section forms a receive filter (2), wherein the second functional element section forms a transmit filter (3), and wherein the electronic component consists of a duplexer comprising the transmit filter and the receive filter.

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