Radiation-emitting component

Abstract

Radiation-emitting component with - a first radiation-emitting semiconductor chip (1) configured to generate a first primary electromagnetic radiation, and a second radiation-emitting semiconductor chip (2) configured to generate a second primary electromagnetic radiation, - a first conversion element (3) that partially converts the first and / or second primary electromagnetic radiation into a first secondary radiation, and - a second conversion element (10) that partially converts the second primary electromagnetic radiation into second secondary radiation, wherein - the first radiation-emitting semiconductor chip (1) is a first semiconductor laser diode, - the first electromagnetic primary radiation is blue primary radiation, - the first secondary radiation is green (g) secondary radiation, - the second secondary radiation is red (r) secondary radiation, - the second conversion element (10) comprises a first area (14) and a second area (15), - the first area (14) is designed to transmit the first and second primary radiation, - the second region (15) is designed to partially convert the first and second primary radiation into red (r) secondary radiation, and - the first area (14) is located in the center of the second conversion element (10) and is surrounded by the second area (15).

Description

[0001] A radiation-emitting component is specified.

[0002] German patent application DE 10 2012 201 307 A1 describes a conversion unit, a laser arrangement, and a lighting arrangement; German patent application DE 10 2008 031 996 A1 describes a radiation-emitting device; German patent application DE 10 2013 104 728 A1 describes a laser diode device; German patent application DE 10 2012 100 446 A1 describes a lighting system; German patent application DE 10 2016 216 624 A1 describes a module and a lighting system; German patent application DE 10 2013 203 572 A1 describes a lighting device with a pump light source and at least two fluorescent wheels; German patent application DE 10 2014 221 382 A1 describes a lighting device with a pump radiation source; and German patent application US 2012 / 0039 072 A1 describes a light source and a projector with at least one light source of this type.

[0003] One task to be solved is to specify a radiation-emitting component that has a particularly high luminance.

[0004] A radiation-emitting component is specified that emits electromagnetic radiation, especially visible light, during operation.

[0005] The radiation-emitting component comprises a first radiation-emitting semiconductor chip, configured to generate a first primary electromagnetic radiation, and a second radiation-emitting semiconductor chip, configured to generate a second primary electromagnetic radiation. For example, the first radiation-emitting semiconductor chip generates the first primary radiation, which is different from the second primary radiation generated by the second radiation-emitting semiconductor chip. That is, the two radiation-emitting semiconductor chips then generate primary radiation in different wavelength ranges, for example, light of different colors.

[0006] Furthermore, it is possible that the first primary radiation is the same as the second primary radiation.

[0007] The first and second primary radiation can be, for example, near-ultraviolet radiation, visible light and / or near-infrared radiation.

[0008] At least one of the semiconductor chips can, for example, be a surface emitter, in which the emitted radiation largely, for example over 80% of the radiant power, exits via a radiation exit surface formed by a main surface of the first radiation-emitting semiconductor chip or by a main surface of the second radiation-emitting semiconductor chip.

[0009] At least one of the semiconductor chips can, for example, be a side-surface emitter, in which the emitted radiation largely, for example over 80% of the radiant power, exits via a radiation emission surface that is encompassed by a side surface of the first radiation-emitting semiconductor chip and / or by a side surface of the second radiation-emitting semiconductor chip. These surfaces run, for example, perpendicular to the main surface of the corresponding radiation-emitting semiconductor chip.

[0010] Furthermore, at least one of the semiconductor chips can be a volume emitting semiconductor chip, which emits the primary radiation not only via a single main surface but also via the side surface. For example, in a volume emitter, at least 30% of the emitted radiation power exits through the side surface.

[0011] At least one of the semiconductor chips can be arranged on at least one mounting element. Preferably, at least one of the semiconductor chips is electrically conductively arranged on the at least one mounting element via an electrical contact. The at least one mounting element contains, for example, a metal or consists of, for example, a metal. The at least one mounting element contains or consists of, for example, one of the following materials: copper tungsten, silicon carbide, or aluminum nitride.

[0012] The first radiation-emitting semiconductor chip and the second radiation-emitting semiconductor chip can be arranged on a substrate. In particular, at least one mounting element can be arranged on the substrate.

[0013] The carrier has, for example, a principal plane of extension. The vertical direction extends perpendicular to the principal plane of extension, and the lateral directions extend parallel to the principal plane of extension. Preferably, the first semiconductor chip and the second semiconductor chip are arranged spaced apart from each other in the lateral directions.

[0014] Furthermore, the substrate can be in electrically conductive contact with the first and second radiation-emitting semiconductor chips. The substrate is made of, for example, a metallic and / or ceramic material. The substrate is, for example, a printed circuit board or a leadframe.

[0015] The radiation-emitting component includes a first conversion element that partially converts the first and / or second primary electromagnetic radiation into a first secondary radiation. The first conversion element comprises phosphor particles designed to convert a portion of the first and / or second primary radiation into a first secondary radiation. That is, the phosphor particles can each convert first and / or second primary electromagnetic radiation into first secondary electromagnetic radiation of a different wavelength range. In particular, the first secondary radiation can encompass wavelengths longer than those of the first and second primary radiation. For example, the first and second primary electromagnetic radiation might be blue or ultraviolet light. The first secondary electromagnetic radiation could be, for example, green, yellow, or red light.

[0016] The first conversion element comprises, for example, a matrix material into which the phosphor particles are embedded. This matrix material can be, for example, a resin such as an epoxy or silicone, or a mixture of these materials, or a ceramic material. The phosphor particles impart the wavelength-converting properties to the conversion layer.

[0017] For the phosphor particles, one of the following materials is suitable, for example: rare-earth-doped garnets, rare-earth-doped alkaline earth sulfides, rare-earth-doped thiogallates, rare-earth-doped aluminates, rare-earth-doped silicates, rare-earth-doped orthosilicates, rare-earth-doped chlorosilicates, rare-earth-doped alkaline earth silicon nitrides, rare-earth-doped oxynitrides, rare-earth-doped aluminum oxynitrides, rare-earth-doped silicon nitrides, rare-earth-doped silalones, or quantum dots. These materials can also be used without a matrix material. The first conversion element can then be formed from or consist of one of these materials.

[0018] The first radiation-emitting semiconductor chip is a semiconductor laser diode. During operation, the semiconductor laser diode emits primary electromagnetic radiation, such as monochromatic and coherent laser light. The laser light is preferably coupled out via the side surface of the semiconductor laser diode. The side surface of the semiconductor laser diode is preferably perpendicular to the first mounting surface.

[0019] The first primary electromagnetic radiation is blue primary radiation. Blue primary radiation is specifically blue light. A peak wavelength of the blue primary radiation preferably lies between 400 nm and 490 nm.

[0020] The first secondary radiation is green secondary radiation. In particular, the first conversion element partially converts the blue primary radiation into green secondary radiation. The green secondary radiation is, in particular, green light. A peak wavelength of the green secondary radiation preferably lies between 490 nm and 580 nm inclusive.

[0021] Alternatively, it is possible that the first conversion element partially converts the blue primary radiation into yellow or differently colored secondary radiation.

[0022] The radiation-emitting component comprises a first radiation-emitting semiconductor chip configured to generate a first primary electromagnetic radiation, and a second radiation-emitting semiconductor chip configured to generate a second primary electromagnetic radiation, a first conversion element that partially converts the first and / or the second primary electromagnetic radiation into a first secondary radiation, wherein the first radiation-emitting semiconductor chip is a first semiconductor laser diode, the first primary electromagnetic radiation is blue primary radiation, and the first secondary radiation is green secondary radiation.

[0023] One idea behind the radiation-emitting component described here is to use semiconductor lasers, for example, in a flashlight application. Using a semiconductor laser allows for the advantageous generation of high luminance levels on the object being illuminated.

[0024] According to at least one embodiment, the second primary electromagnetic radiation is red primary radiation. The red primary radiation is, in particular, red light. A peak wavelength of the red primary radiation preferably lies between 610 nm and 780 nm. For example, the first primary radiation, the second primary radiation, and the first secondary radiation can mix to form white mixed light. For example, the white mixed light thus comprises spectral components of red, green, and blue light.

[0025] According to at least one embodiment, the first semiconductor chip is a first edge-emitting semiconductor laser chip that emits the first primary radiation via a first side surface during operation. The first edge-emitting semiconductor laser chip is configured, for example, to emit the laser radiation generated during operation in a direction parallel to an active, radiation-generating zone of the first semiconductor laser chip. The first side surface of the first semiconductor laser chip forms a first radiation emission surface.

[0026] The first radiation emission surface is oriented, for example, perpendicular or transverse to the surface extension plane of the active zone of the first semiconductor laser chip, which extends in lateral directions. Transverse means that the facet may have an inclination due to the manufacturing process and, for example, may have a deviation of ±5° from a plane perpendicular to the main surface.

[0027] According to at least one embodiment, the second semiconductor chip is a second edge-emitting semiconductor laser chip or a light-emitting diode. If the second semiconductor chip is a second edge-emitting semiconductor laser chip, then the second edge-emitting semiconductor laser chip is, for example, configured to emit the laser radiation generated during operation in a direction parallel to an active, radiation-generating zone of the second semiconductor laser chip that extends in lateral directions.

[0028] If the second semiconductor chip is a light-emitting diode, it can be a surface emitter or volume emitter as described above.

[0029] According to at least one embodiment, the second semiconductor chip has a second radiation emission surface from which the second primary radiation is emitted during operation. If the second semiconductor chip is a second edge-emitting semiconductor laser chip, it emits primary radiation via a second side surface during operation. This second side surface of the second semiconductor laser chip forms a second radiation emission surface. The second radiation emission surface is oriented, for example, perpendicular or transverse to the principal plane of extension of the active zone of the second semiconductor laser chip.

[0030] If the second semiconductor chip is a light-emitting diode (LED), it could, for example, be a surface emitter. In this case, the second radiation emission surface is formed, for instance, by the main surface of the second semiconductor chip.

[0031] According to at least one embodiment, the first side surface of the first semiconductor chip is arranged opposite the second radiation emission surface of the second semiconductor chip. The first side surface, or the first radiation emission surface, is arranged perpendicular or transverse to the principal plane of extension. Furthermore, the second side surface, or the second radiation emission surface, is arranged perpendicular or transverse to the principal plane of extension. The side surfaces, or the radiation emission surfaces, are spaced apart from each other and face each other.

[0032] According to at least one embodiment, a second conversion element is arranged on the second radiation-emitting surface of the second semiconductor chip. For example, the second conversion element is arranged directly on the second semiconductor chip and is in direct contact with it.

[0033] The second conversion element comprises, for example, a matrix material into which phosphor particles are embedded. These particles are designed to convert a portion of the second primary radiation into a second secondary radiation. That is, the phosphor particles can each convert second primary electromagnetic radiation into secondary electromagnetic radiation of a different wavelength range. In particular, the second secondary radiation can encompass wavelengths longer than those of the second primary radiation. For example, the second primary electromagnetic radiation might be blue or ultraviolet light. The second secondary electromagnetic radiation could be, for example, green, yellow, or red light.

[0034] In particular, the matrix material and the phosphor particles of the second conversion element may comprise or be formed from the materials mentioned in connection with the first conversion element.

[0035] The second conversion element partially converts the second primary electromagnetic radiation into a second secondary radiation, and the second secondary radiation is red secondary radiation. Specifically, the second conversion element partially converts the blue primary radiation into red secondary radiation. The red secondary radiation is, in particular, red light. A peak wavelength of the red secondary radiation preferably lies between 650 nm and 750 nm inclusive.

[0036] According to at least one embodiment, the second secondary radiation exhibits a broader emission spectrum compared to the second primary radiation. If the second semiconductor chip is, for example, the second edge-emitting semiconductor laser chip, the emitted first and second primary radiations typically exhibit an emission spectrum. The emission spectrum can be represented graphically by plotting the spectral intensity or the spectral luminous flux of the primary radiation emitted by the semiconductor chip as a function of the wavelength λ. Thus, the emission spectrum is represented by a curve where the wavelength is plotted on the x-axis and the spectral intensity or spectral luminous flux is plotted on the y-axis.

[0037] Furthermore, the emission spectrum exhibits a maximum and a half-width. The term half-width refers to the curve of the emission spectrum with the maximum, where the half-width is the region on the x-axis that corresponds to the two y-values ​​representing half of the emission maximum.

[0038] Preferably, the emission spectrum of the first edge-emitting semiconductor laser chip and the second edge-emitting semiconductor laser chip, or of the first primary radiation and the second primary radiation, has a full width at half maximum (FWHM) of less than or equal to 10 nm. The red secondary radiation converted by the second conversion element also has an emission spectrum. The FWHM of the emission spectrum of the red secondary radiation is preferably greater than or equal to 50 nm.

[0039] According to at least one embodiment, a first optical element is arranged between the first semiconductor chip and the second semiconductor chip, the first optical element being reflective for the first primary radiation and the second primary radiation or the second secondary radiation. Preferably, the first optical element has a reflectivity of at least 90% for the first primary radiation and the second primary radiation or the second secondary radiation. The optical element directs the first primary radiation and the second primary radiation or the second secondary radiation from their respective radiation emission surfaces, which are preferably opposite each other, onto the first conversion element.

[0040] According to at least one embodiment, the first semiconductor chip and the second semiconductor chip are arranged within a housing that has a recess on a cover surface opposite the semiconductor chips. The recess completely penetrates the cover surface and preferably extends laterally. Furthermore, the recess is arranged in the housing such that a large proportion of the first primary radiation and the second primary radiation and / or second secondary radiation can pass through the recess by means of the first optical element.

[0041] According to at least one embodiment, the first conversion element is arranged on or in the recess and completely covers or closes it. For example, the first conversion element projects beyond the recess in lateral directions. In this case, the first conversion element can be arranged on an outer surface of the housing facing away from or towards the semiconductor chips and close the recess. Alternatively, the conversion element can be positioned precisely within the recess. In this case, an outer surface of the first conversion element facing away from or towards the semiconductor chips is flush with the outer surface of the housing facing away from or towards the semiconductor chips.

[0042] The first primary radiation and second primary radiation or second secondary radiation deflected by the first optical element can thus be preferentially partially converted by the first conversion element.

[0043] The radiation-emitting component includes a second conversion element that partially converts the second primary electromagnetic radiation into a second secondary radiation. Furthermore, the second secondary radiation is red secondary radiation. The second conversion element has the same properties as the first conversion element described above.

[0044] According to at least one embodiment, the second radiation-emitting semiconductor chip is a second semiconductor laser diode that, during operation, generates a second primary radiation exhibiting a different polarization than the first primary radiation generated by the first semiconductor laser diode. The first and second primary radiations constitute an electromagnetic wave propagating along a direction of propagation. This electromagnetic wave can, for example, oscillate in different spatial directions. The polarization, or polarization direction, indicates the direction in which this electromagnetic wave oscillates relative to the direction of propagation. That is, the electromagnetic wave associated with the first and second primary radiations oscillates in different spatial directions.

[0045] According to at least one embodiment, the first primary radiation is a first linearly polarized blue primary radiation, and the second primary radiation is a second linearly polarized blue primary radiation. The first and second radiation emission surfaces are preferably arranged parallel to each other. That is, the first and second radiation emission surfaces are not opposite each other but lie in a common plane. For example, the first primary radiation can have a polarization that is parallel or perpendicular to the direction of propagation of the second primary radiation. In particular, the perpendicular or parallel polarization does not change during unimpeded propagation.

[0046] According to at least one embodiment, the polarization of the first linearly polarized blue primary radiation is tilted by 90° relative to the polarization of the second linearly polarized blue primary radiation. For example, if the first linearly polarized blue primary radiation has a polarization perpendicular to the direction of propagation, the polarization of the second linearly polarized blue primary radiation is also perpendicular to its direction of propagation, but is essentially perpendicular to the polarization of the first linearly polarized blue primary radiation. "Essentially perpendicular" means that the polarization of the second linearly polarized blue primary radiation has a deviation of at most 5° from a plane that is perpendicular to the polarization of the first linearly polarized blue primary radiation and perpendicular to the direction of propagation.

[0047] For example, the first semiconductor chip and the second semiconductor chip are configured to emit linearly polarized blue primary radiation with the same polarization during operation. The 90° tilt of the polarization can preferably be achieved by tilting one of the two semiconductor chips by 90°. For example, the first and the second semiconductor chip are each mounted on a first and a second mounting element, respectively. Preferably, the first mounting element is mounted on the substrate with a main surface. The second mounting element is then mounted on the substrate with a side surface perpendicular to the main surface of the first mounting element.

[0048] According to at least one embodiment, a polarization coupler is arranged downstream of the first and second semiconductor chips. The polarization coupler comprises, for example, at least one reflecting mirror that is reflective for either the first linearly polarized blue primary radiation or the second linearly polarized blue primary radiation. Furthermore, the polarization coupler includes, for example, at least one semi-transparent mirror that is transparent for the first linearly polarized blue primary radiation and reflective for the second linearly polarized blue primary radiation, or reflective for the first linearly polarized blue primary radiation and transparent for the second linearly polarized blue primary radiation. "Downstream" means that the polarization coupler is arranged relative to the semiconductor chips such that the primary radiation from the semiconductor chips can pass through it.For this purpose, at least one optical element can be arranged between the semiconductor chips and the polarization coupler, which directs the primary radiation from the semiconductor chips to the polarization coupler, for example by means of reflection and / or refraction.

[0049] According to at least one embodiment, the polarization coupler is configured to superimpose the first linearly polarized blue primary radiation and the second linearly polarized blue primary radiation. The resulting polarized blue primary radiation is a superposition of the first linearly polarized blue primary radiation and the second linearly polarized blue primary radiation. Advantageously, this allows for an increase in energy density.

[0050] According to at least one embodiment, the second conversion element is arranged between the first conversion element and the semiconductor chips. Preferably, the second conversion element is arranged between the first conversion element and the polarization coupler.

[0051] According to at least one embodiment, the second conversion element is arranged in the same plane as the first conversion element. Preferably, a radiation splitter is arranged downstream of the polarization coupler, so that polarized blue primary radiation coupled out of the polarization coupler can be directed onto the second conversion element and the first conversion element.

[0052] The second conversion element comprises a first region and a second region. The first region can have the shape of a cylinder. For example, the second region surrounds an outer surface of the first region. That is, a lateral surface of the cylinder of the first region can be completely enclosed by the second region.

[0053] The first area is designed to transmit the first and second primary radiation, and the second area is designed to partially convert the first and second primary radiation into red secondary radiation. The first area can be a recess. By adjusting the cross-sectional area of ​​the first area and the cross-sectional area of ​​the second area, the ratio of transmitted first and second primary radiation to converted red secondary radiation can be controlled. Furthermore, the heating of the second area can be limited by the size of the first area. During operation of the radiation-emitting component, the second area can heat up considerably. Since no primary radiation is converted into red secondary radiation in the first area, the heating of the second conversion element can be limited.Furthermore, the first area can also be formed using a radiation-permeable material, for example with a transparent or translucent material, i.e. a material that is permeable or partially permeable to primary radiation and does not cause conversion into red secondary radiation.

[0054] The first region is located in the center of the second conversion element and is surrounded by the second region. For example, the first conversion element can have the shape and size of the first region of the second conversion element and be positioned downstream of it. The transmitted first and second primary radiation can preferably be partially converted into green secondary radiation by the first conversion element.

[0055] According to at least one embodiment, a color filter is arranged between the second conversion element and the semiconductor chip. Preferably, the color filter is arranged between the second conversion element and the polarizing filter. Particularly preferably, the filter can be arranged directly on the second conversion element. A radiation entry surface of the color filter facing away from the second conversion element can be covered, at least partially, with an antireflection coating. Furthermore, a transparent heat sink can be arranged between the antireflection coating and the color filter. The heat sink is, for example, made of sapphire.

[0056] Additionally or alternatively, another color filter can be arranged on a radiation entry surface of the first conversion element.

[0057] According to at least one embodiment, the color filter is a dichroic color filter configured to transmit only blue primary radiation. If the color filter is arranged on the second conversion element, it transmits blue primary radiation, so that only the blue primary radiation can be converted by the second conversion element. This advantageously increases the optical efficiency of the radiation-emitting component. If another color filter is arranged on the radiation entrance surface of the first conversion element, it is configured to transmit both blue primary radiation and red secondary radiation.

[0058] Preferably, the color filter and the subsequent color filter are formed by a series of layers. For example, the layer sequence comprises layers with a low refractive index, such as SiO2, and layers with a high refractive index, such as TiO2 or NiO. 10 or TaO10 .

[0059] According to at least one further embodiment, the first conversion element and the second conversion element are arranged in a holder with which a beam path for the first and second primary radiation and the first and second secondary radiation can be adjusted. The holder is preferably designed to be reflective for the first and second primary radiation and has a reflectivity of at least 90% for said radiation. Preferably, a large proportion of said radiation is thus directed onto the first and second conversion elements.

[0060] According to at least one embodiment, a second optical element is arranged downstream of the first conversion element. The second optical element can be used to shape and / or deflect the converted first and second secondary radiation and the transmitted first and second primary radiation.

[0061] According to at least one embodiment, primary and secondary radiation mix to form a warm white mixed light. For example, the primary and secondary radiation are mixed in the first conversion element. The relative proportions of the first primary radiation, the second primary radiation, and the first secondary radiation, or of the first primary radiation, the second secondary radiation, and the first secondary radiation, thus determine the chromaticity and color temperature of the mixed radiation, so that a warm white mixed light can be produced by mixing the aforementioned radiations.

[0062] According to at least one embodiment, the luminance of the mixed light is between 400 and 1300 cd / mm². 2 . By using at least one semiconductor laser diode, the luminance is comparatively high, so the radiation-emitting component can advantageously be used in flash applications.

[0063] Furthermore, a radiation-emitting component is disclosed that comprises only a first radiation-emitting semiconductor chip configured to generate first primary electromagnetic radiation. All features and embodiments disclosed in connection with the previously described first radiation-emitting semiconductor chip are also applicable in connection with the first radiation-emitting semiconductor chip described here, and vice versa.

[0064] Furthermore, the radiation-emitting component comprises a first conversion element that partially converts the first primary electromagnetic radiation into green secondary radiation, and a second conversion element that partially converts the first primary electromagnetic radiation into red secondary radiation, wherein the first radiation-emitting semiconductor chip is a first semiconductor laser diode, and the first primary electromagnetic radiation is blue primary radiation. Furthermore, all features and embodiments disclosed in connection with the conversion elements described above are also applicable in connection with the first and second conversion elements described herein, and vice versa.

[0065] The radiation-emitting component described here will be explained in more detail below using exemplary embodiments and the associated figures.

[0066] They show: Fig. 1 Schematic sectional view of a radiation-emitting component according to an exemplary embodiment, Fig. 2. Schematic representation of a radiation-emitting component according to an exemplary embodiment, Fig. 3. Schematic representation of a conversion element according to an exemplary embodiment, Fig. 4 Schematic sectional view of conversion elements of a radiation-emitting component according to an exemplary embodiment, Fig. 5 and Fig. 6 schematic filter diagrams according to one exemplary embodiment, and Fig. 7 and Fig. 8 schematic representations of conversion elements of a radiation-emitting component according to a further embodiment.

[0067] Identical, similar, or similarly effective elements in the figures are marked with the same reference symbols. The figures and the relative sizes of the elements depicted within them are not to be considered to scale. Rather, individual elements may be exaggerated for clarity and / or to improve representation.

[0068] With the Fig. Figure 1 shows a schematic sectional view of an optoelectronic component according to an exemplary embodiment.

[0069] The optoelectronic component according to the embodiment shown in Fig. The assembly comprises a first semiconductor chip 1 and a second semiconductor chip 2, each of which is a first and a second edge-emitting semiconductor chip, respectively. The first and second semiconductor chips 1, 2 are arranged on a substrate 4 by means of a first and a second mounting element 5. The first and second primary radiation generated during operation is emitted via a first side surface 1b or a first radiation emission surface 1a of the first semiconductor chip 1 and a second side surface or a second radiation emission surface 2a of the second semiconductor chip 2. The first radiation emission surface 1a faces the second radiation emission surface 2a. Furthermore, the first primary radiation is blue primary radiation b and the second primary radiation is red primary radiation r.

[0070] The first semiconductor chip 1 and the second semiconductor chip 2 are surrounded by a housing that has a recess on a cover surface opposite the semiconductor chips. The recess is designed according to Fig. 1 is covered by a first conversion element. The blue primary radiation b and the red primary radiation r are reflected by a first optical element 6 in the direction of the first conversion element 3. The dotted arrows indicate the directions of propagation of the blue and red primary radiation b, r. Furthermore, the first conversion element 3 is configured to convert the blue primary radiation b into green secondary radiation g.

[0071] A second optical element 7 is arranged downstream of the first conversion element 3. The second optical element 7 can shape the green secondary radiation g and the transmitted blue and red primary radiation b, r.

[0072] According to the Fig. Figure 2 shows a schematic representation of an optoelectronic component according to a further embodiment.

[0073] As in Fig. As shown in Figure 2, the first semiconductor chip 1 and the second semiconductor chip 2 are each mounted on a mounting element 5. In contrast to the embodiment shown in Figure 2, the first and second radiation emission surfaces are oriented differently. Fig. The two semiconductor chips are not opposite each other, but lie in a common plane. The mounting element 5 of the second semiconductor chip 2 is tilted by 90° relative to the mounting element 5 of the first semiconductor chip 1. By means of such an arrangement, the polarization of a first linearly polarized blue primary radiation from the first semiconductor chip 1 is tilted by 90° relative to the polarization of a second linearly polarized blue primary radiation from the second semiconductor chip 2.

[0074] The first and second linearly polarized blue primary radiations subsequently enter a polarization coupler 9. The first linearly polarized blue primary radiation is reflected by a reflecting mirror 12 towards a semi-transparent mirror 13, through which it can pass. The second linearly polarized blue primary radiation is also reflected by the semi-transparent mirror 13. This results in a superposition of the first and second linearly polarized blue primary radiations.

[0075] The optoelectronic component has a second conversion element 10, which is arranged between the first conversion element 3 and the polarization coupler 9. The second conversion element 10 further comprises a first region 14 and a second region 15. The second region 15 of the second conversion element 10 converts a portion of the blue primary radiation into red secondary radiation, while a portion of the blue primary radiation remains unconverted by the first region 14 of the second conversion element 10. This unconverted portion of the blue primary radiation then reaches the first conversion element 3 and is partially converted into green secondary radiation. The blue primary radiation, the red secondary radiation, and the green secondary radiation can be mixed within the first conversion element 3.Subsequently, the blue primary radiation, the red secondary radiation and the green secondary radiation or the mixed light can be deflected at the second optical element 7.

[0076] The first and second conversion elements 3, 10 are arranged in a holder 11, with which a beam path of the first and second primary radiation and the first and second secondary radiation can be adjusted.

[0077] According to the Fig. Figure 3 shows a schematic representation of a conversion element according to an exemplary embodiment.

[0078] The second conversion element 10 according to the embodiment of the Fig. Section 3 comprises the first region 14 and the second region 15. The first region 14 has the shape of a cylinder. A lateral surface of the cylinder of the first region 14 is completely enclosed by the second region 15.

[0079] The schematic sectional view of conversion elements of a radiation-emitting component according to the exemplary embodiment of the Fig. Figure 4 shows the first and second conversion elements 3, 10, which are arranged in a holder 11. The second conversion element 10 has the Fig. The setup shown in Figure 3 is as follows. A color filter 17 is arranged on a radiation entrance surface of the second conversion element 10. Furthermore, another color filter 18 is arranged on a radiation entrance surface of the first conversion element 3.

[0080] The second conversion element 10 and the color filter 17 can be arranged on a transparent heat sink 19 which has an anti-reflection coating 16 on a radiation entry surface.

[0081] The examples of implementation of Fig. 5 and Fig. Figure 6 shows schematic color filter diagrams of the color filter ( Fig. 5) and furthermore color filters ( Fig. 6).

[0082] According to Fig. Figure 5 shows the transmission T in % plotted against a wavelength wL in nanometers. Curves b, g, and r are typical emission spectra of a semiconductor laser emitting blue primary radiation b and of converted red and green secondary radiation r, g. A filter curve F1 indicates which spectral components are transmitted by the color filter 17. Here, mainly the blue primary radiation b is transmitted.

[0083] In contrast to the exemplary embodiment of the Fig. 5 is according to Fig. Figure 6 shows another filter curve F2, which indicates the transmitted spectral components from the additional color filter 18. Here, mainly the blue primary radiation b and the red secondary radiation r are transmitted. A large part of the green secondary radiation g is reflected.

[0084] According to Fig. Figure 7 shows a schematic representation of conversion elements of a radiation-emitting component according to a further embodiment. The schematic sectional view according to Fig. Figure 8 shows a section along line BB. Fig.7. The second conversion element 10 is arranged in the same plane as the first conversion element 3. The first conversion element 3 is cylindrical in shape. The second conversion element 10 surrounds an outer surface of the first conversion element 3. Thus, the first conversion element 3 is completely enclosed by the second conversion element 10. The first and second conversion elements 3, 10 are arranged in a holder 11. The holder 11 completely encloses the second conversion element 10. The first and second conversion elements 3, 10 are arranged in the radiation-emitting component such that the primary radiation strikes the first and second conversion elements 3, 10 from the left side.

[0085] The invention is not limited to the description provided by means of the exemplary embodiments. Rather, the invention encompasses every new feature as well as every combination of features, which in particular includes every combination of features in the claims, even if that feature or combination itself is not explicitly stated in the claims or exemplary embodiments. Reference symbol list 1 first semiconductor chip 1a first radiation emission surface 1b first side surface 2 second semiconductor chip 2a second radiation emission surface 3 first conversion element 4 carriers 5 Mounting element 6 first optical element 7 second optical element 8 cases 9 Polarization couplers 10 second conversion element 11 bracket 12 reflective mirrors 13 semi-transparent mirrors 14 first area 15 second area 16 Anti-reflective coating 17 color filters 18 additional color filters 19 heat sinks T Transmission wL wavelength F1 filter curve F2 further filter curve b blue g green r red

Claims

[1] Radiation-emitting component with - a first radiation-emitting semiconductor chip (1) configured to generate a first primary electromagnetic radiation, and a second radiation-emitting semiconductor chip (2) configured to generate a second primary electromagnetic radiation, - a first conversion element (3) that partially converts the first and / or second primary electromagnetic radiation into a first secondary radiation, and - a second conversion element (10) that partially converts the second primary electromagnetic radiation into second secondary radiation, wherein - the first radiation-emitting semiconductor chip (1) is a first semiconductor laser diode, - the first electromagnetic primary radiation is blue primary radiation, - the first secondary radiation is green (g) secondary radiation, - the second secondary radiation is red (r) secondary radiation, - the second conversion element (10) comprises a first area (14) and a second area (15), - the first area (14) is designed to transmit the first and second primary radiation, - the second region (15) is designed to partially convert the first and second primary radiation into red (r) secondary radiation, and - the first area (14) is located in the center of the second conversion element (10) and is surrounded by the second area (15). [2] Radiation-emitting component according to the preceding claim 1, wherein - the second radiation-emitting semiconductor chip (2) is a second semiconductor laser diode which, when in operation, produces a second primary radiation which has a different polarization than the first primary radiation produced by the first semiconductor laser diode. [3] Radiation-emitting component according to the preceding claim 2, wherein - the first primary radiation is a first linearly polarized blue (b) primary radiation and the second primary radiation is a second linearly polarized blue (b) primary radiation, and - a polarization of the first linearly polarized blue (b) primary radiation is tilted by 90° relative to a polarization of the second linearly polarized blue (b) primary radiation. [4] Radiation-emitting component according to one of the preceding claims 2 or 3, wherein - a polarization coupler is arranged downstream of the first semiconductor chip (1) and the second semiconductor chip (2), and - the polarization coupler is designed to superimpose the first linearly polarized blue (b) primary radiation and the second linearly polarized blue (b) primary radiation. [5] Radiation-emitting component according to any one of the preceding claims 1 to 4, wherein the second conversion element (10) is arranged between the first conversion element (3) and the semiconductor chips (1, 2). [6] Radiation-emitting component according to any one of the preceding claims 1 to 5, wherein - a color filter (17) is arranged between the second conversion element (10) and the semiconductor chips (1, 2), and - the color filter (17) is a dichroic color filter designed to transmit only blue (b) primary radiation. [7] Radiation-emitting component according to any one of the preceding claims 1 to 6, wherein a second optical element (7) is arranged downstream of the first conversion element (3). [8] Radiation-emitting component according to any one of the preceding claims 1 to 7, wherein - white mixed light is produced, and - the luminance of the mixed light between 400 and 1300 cd / mm 2 lies. [9] Radiation-emitting component with - a first radiation-emitting semiconductor chip (1) designed to generate first primary electromagnetic radiation, - a first conversion element (3) that partially converts the first primary electromagnetic radiation into green (g) secondary radiation, and - a second conversion element (10) that partially converts the first primary electromagnetic radiation into red (r) secondary radiation, wherein - the first radiation-emitting semiconductor chip (1) is a first semiconductor laser diode, - the first electromagnetic primary radiation is blue (b) primary radiation, - the second conversion element (10) is arranged in a plane with the first conversion element (3), - the first conversion element (3) has the form of a cylinder, and - the second conversion element (10) surrounds an outer surface of the first conversion element (3).

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