Arrangement with a first and a second power semiconductor module and with a DC busbar

Abstract

Arrangement (1) comprising a first and a second DC partial busbar (4, 5), a cooling device (3), and a first and a second power semiconductor module (2, 2a, 2b), each power semiconductor module (2, 2a, 2b) comprising a rectangular housing (20), an AC terminal element (26), and a first and a second DC terminal element (22, 24), the AC terminal element (26) being arranged in the region of a first side (206) and the DC terminal elements (22, 24) being arranged in the region of a second side (202) of the housing (20), the first and the second power semiconductor module (2, 2a, 2b) being arranged on the cooling device (3), their respective second sides (202) being opposite each other along a longitudinal axis (100) of the arrangement.and wherein the first DC partial busbar (4) connects the two first DC terminal elements (22) and the second DC partial busbar (5) connects the two second DC terminal elements (24) and wherein an AC busbar (6) connects the AC terminal elements (26) of the respective opposite first and second power semiconductor modules (2, 2a, 2b) to each other.

Description

[0001] The invention describes an arrangement comprising a first and a second DC busbar forming the DC busbar, a cooling device, and a first and a second power semiconductor module, each power semiconductor module having a housing, an AC connection element, and a first and a second DC connection element. Such arrangements are used in high-performance vehicles, particularly in watercraft or rail vehicles, or in the field of renewable energies, and especially in photovoltaic or wind power plants.

[0002] EP 3 404 818 A1 discloses a generic semiconductor circuit arrangement with at least two half-bridge modules, each having an AC voltage terminal, and a positive DC busbar, a negative DC busbar, and at least one AC busbar, wherein the AC terminals are electrically connected to each other by means of the AC busbar. To improve the current distribution across these electrically parallel half-bridge modules, it is proposed that, at least in the region of the AC terminals, the positive DC busbar and the negative DC busbar extend over a region in which the AC busbar is located, wherein two of the at least two half-bridge modules are arranged side by side such that the AC voltage surfaces of the at least two half-bridge modules are adjacent to each other.Furthermore, the invention relates to a power converter with at least one such semiconductor switching arrangement. The invention further relates to a vehicle, in particular a rail vehicle, with at least one such semiconductor switching arrangement or such a power converter.

[0003] Furthermore, US Patent 2011 / 0 235 270 A1 discloses a power converter capable of minimizing the extent to which other power converter components besides the semiconductor module are thermally affected by heat emanating from the semiconductor module. The converter comprises a housing containing semiconductor modules forming a main power conversion circuit; a capacitor electrically connected to the main circuit; drive circuits supplying the main circuit with a drive signal used in power conversion operation; and a control circuit supplying the driver circuit with a control signal used to instruct the driver circuit to provide the driver signal. Within the housing, a cooling chamber with a coolant passage is formed, and one wall of the cooling chamber is made of a thermally conductive material.At least the semiconductor modules are housed inside the cooling chamber, and at least the capacitor and the control circuitry are located outside the cooling chamber.

[0004] US 2006 / 0274561A1 discloses a three-stage inverter power module that features a highly modular architecture, enabling a basic power module to be configured quickly, easily and cost-effectively to cover a wide variety of applications.

[0005] US Patent 2015 / 0340961A1 discloses a power converter comprising a housing, a first power converter circuit module, a second power converter circuit module, and a DC capacitor module. The first converter circuit module includes at least one first bridge branch. The second converter circuit module includes at least one second bridge branch. The first converter circuit module, the second converter circuit module, and the DC capacitor module are arranged in the housing. The second bridge branch and the first bridge branch are arranged in parallel. The DC capacitor module is electrically connected between the first bridge branch and the second bridge branch, such that the first bridge branch and the second bridge branch share the DC capacitor module.

[0006] DE 198 47 029 A1 discloses a compact electronic circuit arrangement in the form of a high-performance inverter with low-inductance capacitors integrated into the DC link. The capacitors and power electronics are low-inductance and closely adjacent, electrically insulated on one side below a planar DC link busbar and thermally insulated on the other side on a heat sink, with at least parts of the circuit or the entire inverter arrangement being housed in a single enclosure.

[0007] WO 2014 / 184 020 A1 discloses a three-dimensional arrangement for a power converter device, such as an inverter or a rectifier. The necessary switching elements, control electronics, and load connections are arranged on a carrier device in such a way as to result in particularly short cable paths. All required components, such as switching elements, control electronics, and load connections, are arranged on a common carrier device. This carrier device also serves as a cooling system for the entire switching device. This achieves particularly efficient operation of the power converter device.

[0008] With knowledge of the prior art, the invention is based on the objective of further developing the arrangement in such a way that the parasitic inductances during operation are as low as possible.

[0009] This problem is solved according to the invention by an arrangement with a first and a second DC partial busbar, with a cooling device and with a first and a second power semiconductor module, wherein each power semiconductor module has a rectangular housing, an AC voltage connection element and a first and a second DC voltage connection element, wherein the AC voltage connection element is arranged in the region of a first side and the DC voltage connection elements are arranged in the region of a second side of the housing, wherein the first and the second power semiconductor module are arranged on the cooling device, and their respective second sides are opposite each other along a longitudinal axis of the arrangement.and wherein the first DC sub-bus connects the two first DC terminal elements and the second DC sub-bus connects the two second DC terminal elements, and wherein an AC bus connects the AC terminal elements of the respective opposite first and second power semiconductor modules.

[0010] Here, a rectangular enclosure is understood to be an enclosure with or without a base plate and with a base that is not only rectangular in a strictly mathematical sense. Furthermore, the term "side" is understood to refer not to the side surface as such, but to the respective lateral area of ​​the enclosure.

[0011] Basically, it is very advantageous if the first and second power semiconductor modules are identical with respect to mechanical and electrical parameters.

[0012] Advantageously, the first and second DC voltage connection elements can be arranged on the top side of the housing or protrude from the side surface of the second side of the housing.

[0013] It may be particularly preferred if the first and second DC connection elements are each designed as two DC partial connection elements and these are arranged in the corners of a particularly virtual rectangle.

[0014] It is particularly preferred if a plurality of first and second power semiconductor modules are arranged in rows, with their outer sides facing each other, so that the normals of these outer sides point in the direction of the longitudinal axis. This forms a row of first and a row of second power semiconductor modules. It can also be advantageous if the first DC busbar connects all first DC terminals and the second DC busbar connects all second DC terminals.

[0015] It can also be advantageous if capacitors of a capacitor assembly are arranged on the side of the DC busbars facing away from the power semiconductor modules, and if first capacitor terminals are electrically connected to the first DC busbar and second capacitor terminals are electrically connected to the second DC busbar, preferably directly. A direct connection is particularly evident if the capacitors are directly connected to the DC busbars with correct polarity, thus eliminating the need for a separate busbar connection for the capacitors.

[0016] It may be preferred if at least the first or second, preferably both, DC partial busbars are symmetrical with respect to the longitudinal axis of the arrangement.

[0017] It may be preferred if a connecting section of the AC busbar runs laterally along and preferably at the level of another side of the power semiconductor modules, as this leaves the space above the DC connection elements free for the DC partial busbars.

[0018] It can also be advantageous if two first and two second power semiconductor modules are arranged in a rectangular shape relative to each other and have a common AC busbar that connects the AC terminal elements of the first and second opposing power semiconductor modules, and wherein this AC busbar is preferably symmetrical in the longitudinal or transverse direction of the arrangement.

[0019] Likewise, it can be advantageous if the first and second DC partial busbars and the AC partial busbar form a stack section by section, and preferably a section of the AC partial busbar is arranged above the section(s) of the DC partial busbar.

[0020] It is understood that the various preferred embodiments of the invention can be implemented individually or in any combination to achieve improvements. In particular, the features mentioned and explained above and below can be used not only in the combinations specified, but also in other combinations or individually, without departing from the scope of the present invention.

[0021] Further explanations of the invention, advantageous details and features, will become apparent from the following description of the invention contained in the Fig. 1 to 12 schematically illustrated embodiments of the invention or of respective parts thereof. Fig. 1 and Fig. Figure 2 shows two configurations of power semiconductor modules. Fig. Figures 3 to 6 show different views of an arrangement according to the invention. Fig. 7, Fig. 8 and Fig. Figure 10 shows arrangements according to the invention, each in the configuration of a three-phase bridge circuit. Fig. Figure 9 shows a side view of a three-phase bridge circuit. Fig. Figure 11 shows an arrangement according to the invention with a capacitor device. Fig. Figure 12 shows an arrangement with an alternative design of the power semiconductor modules.

[0022] Fig. 1 and Fig. Figure 2 shows two embodiments of power semiconductor modules 2, 2a, 2b in top view. Each power semiconductor module 2, 2a, 2b has a base plate with fastening devices 210 for a force-fit connection to a cooling device, see Figure 2. Fig. 4. These fastening devices 210 are arranged in the corner areas of the housing 20, which has a rectangular base shape. The connection devices of the power semiconductor module 2, 2a, 2b are arranged on the visible top surface 200 of the housing 20. Adjoining the top surface 200 laterally, the housing 20 has a first side 206, a second side 202 opposite this, and two further sides 204, 208 connecting these two.

[0023] Each of the two power semiconductor modules 2, 2a, 2b has, purely as an example, three AC voltage connection elements 26, which here each have the same potential, whereby the power semiconductor module is thus configured as a half-bridge module. In principle, however, these three AC voltage connection elements 26 can also have different AC potentials, in which case the power semiconductor module is configured as a three-phase inverter module.

[0024] The AC voltage connection elements 26 are arranged on the top surface 200 of the housing 20, in the area of ​​the first side 206. The DC voltage connection elements 22, 24 are also arranged on the top surface 200 of the housing 20, in the area of ​​the second side 202.

[0025] Each power semiconductor module 2, 2a, 2b has two DC voltage sub-terminal elements 220, 240, which form the respective first and second DC voltage terminal elements 22, 24 in pairs. All DC voltage sub-terminal elements 220, 240 are located on the corners of a virtual rectangle on the top surface 200 of the housing 20.

[0026] In the case of the power semiconductor module 2 according to Fig. 1 In each case, a DC voltage partial connection element 220, 240 of the first and second DC voltage connection elements 22, 24 is located in the area of ​​a second side 202 of the housing 20. In the power semiconductor module according to figure

[0027] The two DC voltage sub-connection elements 220 of the first DC voltage connection element 22 are located in the area of ​​a second side 202 of the housing 20. The two DC voltage sub-connection elements 240 of the second DC voltage connection element 24 are directly adjacent, with the necessary distance to maintain air and creepage distances naturally being maintained.

[0028] Furthermore, both power semiconductor modules 2,2a,2b have auxiliary connection elements 28, which are also arranged on the top 200 of the housing 20.

[0029] Fig. Figures 3 to 6 show different views of an arrangement 1 according to the invention. Here, three first and three second power semiconductor modules 2a, 2b are shown according to... Fig. 2 are arranged such that the second sides 202 of the power semiconductor modules 2a, 2b face each other in pairs. This results in three pairs of first and second power semiconductor modules 2a, 2b, with their second sides 202 arranged along a longitudinal axis 100 of the arrangement 1. Furthermore, the other sides 204, 208 of adjacent power semiconductor modules 2a, 2b face each other, so that the normals of all other sides 204, 208 point in the positive or negative direction of the longitudinal axis 100.

[0030] In Fig. Figure 3 shows a top view of the upper surfaces 200 of the housings 20 of the power semiconductor modules 2a, 2b, in Fig. 5 is additionally the first DC partial busbar 4 and in Fig. 6 the second DC partial busbar 5 is shown. Fig. Figure 4 shows the arrangement 1, its cooling device 3 (here designed as a liquid cooling device), and two power semiconductor modules 2a and 2b opposite each other with their second sides 202, in a partial exploded view in a side view along the longitudinal axis 100 of the arrangement 1. The power semiconductor modules are arranged on a surface of the cooling device in a thermally conductive manner. Also shown is the first DC busbar 4, which connects the first DC terminal elements 22 of the two power semiconductor modules 2a and 2b. The second DC busbar 5, which connects the second DC terminal elements 24 of the two power semiconductor modules 2a and 2b, is also shown. The two DC busbars 4 and 5 partially form a stack and also a DC busbar as such.

[0031] In Fig. Figure 5 shows the first DC partial busbar 4, which connects all the first DC connection elements 22. Fig. Figure 6 shows the second DC partial busbar 5, which connects all second DC connection elements 24.

[0032] In this advantageous embodiment of the arrangement 1, the two DC partial busbars 4,5 are completely symmetrical with respect to the longitudinal axis 100 of the arrangement 1 in the area above the power semiconductor modules 2a,2b.

[0033] Fig. 7, Fig. 8 and Fig. Figure 10 shows arrangements according to the invention 1, each in a configuration of a three-phase bridge circuit. For the sake of clarity, the DC partial busbars have been omitted here. These can preferably be of the same type as those shown in the Fig. 5 and Fig. 6 trained.

[0034] The diagram shows first and second power semiconductor modules 2a, 2b arranged opposite each other in pairs, and an AC busbar 6 connecting the AC terminal elements 26 of the power semiconductor modules 2a, 2b. The AC busbar 6 has a connecting section 60 perpendicular to the longitudinal axis 100 of the arrangement 1, which runs laterally along and at the level of another side of the power semiconductor modules 2a, 2b. Thus, the first and second DC busbars 4, 5, as shown in the Fig. Figures 4 to 6 show that the power semiconductor modules 2a and 2b are arranged very close to the top surface 200 of the housings 20. This results in an extremely compact arrangement 1 that is also low inductance with respect to parasitic inductances during operation.

[0035] The design of Order 1 according to Fig. The device 8 comprises three groups, each consisting of two first and two second power semiconductor modules 2a, 2b, arranged in a rectangular configuration relative to each other and sharing a common AC busbar 6, thereby forming a three-phase bridge circuit. The respective AC busbar 6 connects the AC terminal elements 26 of the first and second power semiconductor modules 2a, 2b of each group. Advantageously, the AC busbars 6 are symmetrically arranged orthogonally to the longitudinal axis 100.

[0036] It is particularly advantageous with regard to a compact design if, as in Fig. Figure 9 shows that the respective connecting sections 60 run between the adjacent first and adjacent second power semiconductor modules 2a,2b, thus creating space for the DC partial busbars. Fig. Figure 9 thus shows a side view from the x-direction, i.e. orthogonal to the longitudinal axis of the arrangement, a three-phase bridge circuit.

[0037] Fig. Figure 10 shows a further embodiment of a three-phase bridge circuit, wherein each half-bridge circuit is formed from two first and two second power semiconductor modules 2a, 2b, with each pair consisting of a first and second power semiconductor module 2a, 2b being formed opposite each other with their respective second sides 202 along a longitudinal axis 100 of the arrangement 1. The two pairs forming a half-bridge circuit are not arranged adjacent to each other here; rather, the respective pairs of the respective half-bridges form an alternating arrangement. The first pair of the first half-bridge circuit is followed by the first pair of the second half-bridge circuit, and then by the first pair of the third half-bridge circuit. The second pairs follow in the same manner. Not shown, but fundamentally possible, this arrangement can also be continued analogously for third and fourth pairs.

[0038] In this embodiment of the arrangement 1, the first and second DC partial busbars 4,5 and the AC partial busbar 6 form a stack section by section, with the respective section of the AC partial busbar 6 being arranged above the section(s) of the DC partial busbar 4,5.

[0039] Fig. Figure 11 shows an arrangement according to the invention with an additional capacitor assembly 8 comprising a plurality of individual capacitors 80. These capacitors 80 are arranged on the side of the DC busbar 4, 5 facing away from the power semiconductor modules 2a, 2b. This DC busbar simultaneously forms a capacitor busbar. Thus, first capacitor connection elements are directly electrically connected to the first DC busbar 4, and second capacitor connection elements are directly connected to the second DC busbar 5.

[0040] Fig. Figure 12 shows an arrangement with an alternative configuration of the power semiconductor modules 2a, 2b. Here, the AC voltage connection elements 26 are not arranged on the top of the housing 20, but protrude directly from the side surface of the first side 206 of the housing. Furthermore, the DC voltage connection elements 22, 24 are also not arranged on the top of the housing 20, but protrude directly from the side surface of the second side 202 of the housing 20. The first and second DC partial busbars 4, 5 are thus arranged in the space between the first and second power semiconductor modules 2a, 2b.

Claims

[1] Arrangement (1) with a first and a second DC voltage sub-busbar (4, 5), with a cooling device (3) and with a first and a second power semiconductor module (2, 2a, 2b), wherein each power semiconductor module (2, 2a, 2b) has a rectangular housing (20), an AC voltage connection element (26) and a first and a second DC voltage connection element (22, 24), wherein the AC voltage connection element (26) is arranged in the region of a first side (206) and the DC voltage connection elements (22, 24) are arranged in the region of a second side (202) of the housing (20), wherein the first and the second power semiconductor module (2, 2a, 2b) are arranged on the cooling device (3), and their respective second sides (202) lie opposite one another along a longitudinal axis (100) of the arrangement,and wherein the first DC voltage sub-busbar (4) connects the two first DC voltage connection elements (22) and the second DC voltage sub-busbar (5) connects the two second DC voltage connection elements (24) and wherein an AC voltage busbar (6) connects the AC voltage connection elements (26) of the respective opposite first and second power semiconductor modules (2, 2a, 2b) to one another. [2] Arrangement according to claim 1, wherein the first and second DC voltage connection elements (22, 24) are arranged on a top side (200) of the housing (20) or protrude from the side surface of the second side (202) of the housing (20). [3] Arrangement according to one of the preceding claims, wherein the first and the second DC voltage connection element (22, 24) are each designed as two DC voltage sub-connection elements (220, 240) and these are arranged in the corners of a rectangle. [4] Arrangement according to one of the preceding claims, wherein a plurality of first and second power semiconductor modules (2, 2a, 2b) are each arranged in rows and the further sides (204, 208) face each other, whereby the normals of these further sides (204, 208) point in the direction of the longitudinal axis (100). [5] Arrangement according to claim 4, wherein the first DC voltage sub-busbar (4) connects all first DC voltage connection elements (22) and the second DC voltage sub-busbar (5) connects all second DC voltage connection elements (24). [6] Arrangement according to one of the preceding claims, wherein capacitors (80) of a capacitor device (8) are arranged on the side of the DC voltage sub-busbar (4, 5) facing away from the power semiconductor modules (2, 2a, 2b), and first capacitor connection elements are electrically conductively and preferably directly connected to the first DC voltage sub-busbar (4) and second capacitor connection elements are electrically conductively and preferably directly connected to the second DC voltage sub-busbar (5). [7] Arrangement according to one of the preceding claims, wherein at least the first or second, preferably both, DC voltage partial busbars (4, 5) are formed symmetrically with respect to the longitudinal axis (100) of the arrangement (1). [8] Arrangement according to one of the preceding claims, wherein a connecting section (60) of the AC busbar (6) runs laterally along and preferably at the level of another side (204,208) of the power semiconductor modules (2,2a,2b). [9] Arrangement according to one of the preceding claims, wherein two first and two second power semiconductor modules (2, 2a, 2b) are arranged rectangularly to one another and have a common AC busbar (6) which connects the AC connection elements (26) of the first and second opposite power semiconductor modules (2, 2a, 2b) to one another and wherein this AC busbar (6), preferably in the longitudinal direction (100) or in the transverse direction of the arrangement (1), is designed symmetrically thereto. [10] Arrangement according to one of the preceding claims, wherein the first and second DC voltage partial busbars (4, 5) and the AC voltage busbar (6) form a stack in sections and preferably a section of the AC voltage busbar (6) is arranged above the section or sections of the DC voltage partial busbar (4, 5).

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