LED package and electronic device with the same

Abstract

Light-emitting diodes, hereinafter referred to as LEDs, -package comprising: a substrate (110) comprising a pair of first wiring electrodes (111) and a pair of second wiring electrodes (112); an LED chip (120; 120A; 120B) on the substrate (110), wherein the LED chip (120; 120A; 120B) is electrically connected to the pair of first wiring electrodes (111); a wavelength conversion layer (130) on the LED chip (120; 120A; 120B); an electrochromic layer (150) on the wavelength conversion layer (130), wherein the electrochromic layer (150) is electrically connected to the pair of second wiring electrodes (112), and the electrochromic layer (150) is configured to have a first color before the application of a voltage and to be transparent after the application of the voltage; an optical lens (140) on the electrochromic layer (150); and a lateral structure (160) comprising a reflective layer (161) covering at least one section of a lateral surface of each the LED chip (120; 120A; 120B) and the wavelength conversion layer (130), and a color layer (162) on the reflective layer (161) and having a second color.

Description

BACKGROUND 1. Area

[0001] Embodiments relate to a light-emitting diode (LED) package and an electronic device containing the same. 2. Description of the related technology

[0002] A light-emitting diode (LED) can offer various advantages, such as low power consumption, high brightness, long lifespan, and the like. An LED package comprising an LED chip can, for example, be implemented as the flash module of an electronic device, such as a mobile phone.

[0003] DE 20 2014 011 392 U1 discloses an LED housing in which a light-emitting chip is provided with a wavelength conversion layer and a side reflective unit, the side surfaces being covered by an opaque structure.

[0004] AT 0 516 080 A1 discloses a cover for a lighting device, in particular a vehicle headlight, which has an electrically activatable cover element that is switchable between translucent and opaque and is supplemented by a partially translucent layer. SUMMARY

[0005] According to one aspect of embodiments of the invention, an LED package comprises a substrate with a pair of first wiring electrodes and a pair of second wiring electrodes, an LED chip located on the substrate and electrically connected to the pair of first wiring electrodes, a wavelength conversion layer located on the LED chip, an electrochromic layer located on the wavelength conversion layer which is electrically connected to the pair of second wiring electrodes and is configured to have a first color before the application of a voltage and to be converted to be transparent after the application of the voltage, an optical lens located on a top surface or a bottom surface of the electrochromic layer, and a lateral structure comprising a reflective layer.which covers at least one section of a lateral surface of each the LED chip and the wavelength conversion layer, and has a color layer on the reflective layer and comprising a second color.

[0006] According to another aspect of embodiments of the invention, the LED package comprises a substrate, an LED chip located on the substrate, a wavelength conversion layer located on the LED chip, an electrochromic layer located on the wavelength conversion layer and configured to be opaque before the application of a voltage and to be converted to be transparent after the application of the voltage, and a reflective layer covering a lateral surface of the LED chip and a lateral surface of the wavelength conversion layer.

[0007] According to another aspect of embodiments according to the invention, an electronic device comprises a device housing with a transparent cover having an optical window and a third color, as well as an LED package according to the invention, which is located inside the device housing to emit light through the optical window. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Features are apparent to the person skilled in the art through a detailed description of exemplary embodiments with reference to the accompanying drawings, in which: Fig. 1A is a cross-sectional view of an LED package according to one embodiment; Fig. 1B a top view of the LED package from Fig. 1A is; Fig. 1C and Fig. 1D cross-sectional views of various LED chips in the LED package Fig. 1A are; Fig. 1E an enlarged cross-sectional view of the optical lens made of Fig. It's 1A. Fig. 2 a cross-sectional view of an LED package according to one embodiment; Fig. 3 a cross-sectional view of an LED package according to one embodiment; Fig. 4 is a cross-sectional view of an LED package according to one embodiment; Fig. 5A is a cross-sectional view of an LED package according to one embodiment; Fig. 5B an enlarged cross-sectional view of the optical lens Fig. 5A is. Fig. 6A is a cross-sectional view of an LED package according to one embodiment; Fig. 6B shows a cross-sectional view of an optical sensor in the LED package. Fig. 6A is; Fig. 6C is a top view of the optical sensor located in Fig. 6B is shown; Fig. 7A and Fig. 7B Cross-sectional views of an LED package according to one embodiment are; Fig. 8 a perspective view of an electronic device comprising an LED package according to various embodiments; Fig. 9A and Fig. 9B each shows cross-sectional views of a combined state of components of an electronic device and an LED package according to an embodiment; Fig. 10A to 10C Cross-sectional views of stages of a manufacturing process of the LED package made of Fig. They are top-notch. DETAILED DESCRIPTION

[0009] Fig. Figure 1A is a cross-sectional view showing an LED package 100A according to one embodiment, and Fig. 1B is a top view of the LED package 100A made of Fig. 1A. Fig. 1B shows an upper surface of the LED package 100A Fig. 1A.

[0010] Referring to Fig. 1A and Fig. In 1B, the LED package 100A can comprise a substrate 110, an LED chip 120, a wavelength conversion layer 130, an optical lens 140, an electrochromic layer 150, and a lateral structure 160. In one embodiment, the LED package 100A can be configured to emit white light and can be used as a flash module of an electronic device, but is not limited to this use.

[0011] The substrate 110 can have a top surface on which at least one pair of first wiring electrodes 111 and a pair of second wiring electrodes 112 are located, and can include a circuit connected to the pair of first wiring electrodes 111 and the pair of second wiring electrodes 112 therein. For example, the substrate 110 can include the pair of first wiring electrodes 111 and the pair of second wiring electrodes 112 located on its top surface, first external wiring electrodes 115 and second external wiring electrodes 114 located on a bottom surface, and wiring vias 113 connecting corresponding first wiring electrodes 111, second wiring electrodes 112, first external wiring electrodes 115, and second external wiring electrodes 114.For example, a first wiring electrode 111 can be electrically connected to a first external wiring electrode 115 via a wiring via 113, and a second wiring electrode 112 can be connected to a second external wiring electrode 114 via a wiring via 113. The drawings only show the wiring via 113, which connects the first wiring electrodes 111, the second wiring electrodes 112, the first external wiring electrodes 115, and the second external wiring electrodes 114. However, a circuit in the substrate 110 is not limited to the structures shown in the drawings and can be formed from a plurality of wiring layers and via layers, or can be configured to have a conductor termination form.

[0012] In one example, the LED package 100A can be mounted on another substrate (e.g., a mainboard) to receive a drive signal or the like externally through the first external wiring electrodes 115 and the second external wiring electrodes 114. The LED package 100A can be mounted on another substrate, e.g., by a flip-chip method, but is not limited to this. The pair of first wiring electrodes 111 and the pair of second wiring electrodes 112 can each be connected to the LED chip 120 and the electrochromic layer 150, and the pair of first wiring electrodes 111 and the pair of second wiring electrodes 112 can be electrically isolated from each other on the substrate 110. Therefore, the LED chip 120 and the electrochromic layer 150 can be combined with other applications in a state mounted on an electronic device and can be operated independently. The substrate 110 can, for example, be...a printed circuit board (PCB), a metal core PCB (MCPCB), a metal PCB (MPCB), or a flexible PCB (FPCB). A length or width ℓ1 of the substrate 110 in a horizontal direction (direction of an X-axis) can be longer than a length or width (ℓ2, ℓ3, ℓ4, or ℓ5) of each of the LED chip 120, the wavelength conversion layer 130, the optical lens 140, and the electrochromic layer 150 in the horizontal direction (direction of the X-axis).

[0013] The LED chip 120 can be located on the substrate 110, and a lateral surface of the substrate can be surrounded by the lateral structure 160. The LED chip 120 can be electrically connected to the pair of first wiring electrodes 111. In one embodiment, the LED chip 120 can be mounted on the substrate 110 by a flip-chip method. Therefore, the LED chip 120 can comprise a pair of electrodes connected to the pair of first wiring electrodes 111 by a connecting element, such as solder, a ball, or the like. In another example, the LED chip 120 can be mounted on the substrate 110 by a flip-chip method. In this case, a bond wire of the LED chip 120 can be covered by a reflective layer 161.

[0014] The LED chip 120 is described below according to one embodiment with reference to Fig. 1C and Fig. Described in 1D. Fig. 1C and Fig. 1D are cross-sectional views showing various 120A and 120B LED chips that are part of the 100A LED package. Fig. They are perfectly usable.

[0015] Referring to Fig. In 1C, the LED chip 120A can comprise a chip substrate 121 and a semiconductor stack body S. The semiconductor stack body S can comprise a semiconductor layer 124 of a first conductivity type, an active layer 125, and a semiconductor layer 126 of a second conductivity type, arranged sequentially on the chip substrate 121. A buffer layer 122 can be located between the chip substrate 121 and the semiconductor layer 124 of the first conductivity type. Furthermore, first and second electrodes 129a and 129b can also be located on the semiconductor layer 124 of the first conductivity type and the semiconductor layer 126 of the second conductivity type, respectively.

[0016] The chip substrate 121 can be an insulating substrate, e.g., sapphire. However, embodiments are not limited to this, and the chip substrate 121 can, in addition to being an insulating substrate, be a conductive or semiconductor substrate. The chip substrate 121 can be, for example, SiC, Si, MgAl₂O₄, MgO, LiAlO₂, LiGaO₂, or GaN, in addition to sapphire. An irregularity C can be formed on a top surface of the chip substrate 121. The irregularity C can improve the quality of a growing single crystal while simultaneously improving light extraction efficiency.

[0017] The buffer layer 122 can be used in x Al y Ga 1-x-y Let N be (where 0≤x≤1 and 0≤y≤1). Buffer layer 122 can be, for example, GaN, AlN, AlGaN, or InGaN. Buffer layer 122 can be used by combining a plurality of layers or by gradually changing some compositions.

[0018] The semiconductor layer 124 of the first conductivity type can be a nitride semiconductor, which In x Al y Ga 1-x-y N of n-type fulfills (where 0≤x<1, 0≤y<1 and 0≤x+y<1) and impurities of n-type can be Si. For example, the semiconductor layer 124 of the first conductivity type can comprise n-type GaN. The semiconductor layer 126 of the second conductivity type can be a nitride semiconductor layer, which In x Al y Ga 1-x-y N is of the p-type (where 0≤x<1, 0≤y<1 and 0≤x+y<1), and p-type impurities can be Mg. For example, the semiconductor layer 126 of the second conductivity type can be implemented as a single-layer structure, but it can have a multi-layer structure with different compositions.

[0019] The active layer 125 can have a multiple quantum well (MQW) structure in which a quantum well layer and a quantum barrier layer are stacked alternately. The quantum well layer and the quantum barrier layer can, for example, be in x Al y Ga 1-x-y N (where 0≤x≤1, 0≤y≤1 and 0≤x+y≤1) can have different compositions. For example, the quantum well layer In x Ga 1-x N be (where 0 <x≤1) und die Quantensperrschicht kann GaN oder AlGaN sein. Eine Dicke der Quantentopfschicht und eine Dicke der Quantensperrschicht können jeweils in einem Bereich von 1 nm bis 50 nm liegen. Die aktive Schicht 125 ist nicht auf die mehrfache Quantentopfstruktur beschränkt sondern kann auch eine einfache Quantentopfstruktur sein.

[0020] The first and second electrodes 129a and 129b can each be located on a message-etched region of the semiconductor layer 124 of the first conductivity type and the semiconductor layer 126 of the second conductivity type, such that they are located on the same area (or side), e.g., on the chip substrate 121. The first and second electrodes 129a and 129b can each be electrically connected to the pair of first wiring electrodes 111. The first electrode 129a is not limited to this but can, for example, comprise Ag, Ni, Al, Cr, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, or the like, and can be used as a single-layer or two-layer or more-layer structure. The second electrode 129b can be a transparent electrode, e.g., a transparent conductive oxide or a transparent conductive nitride, or it can comprise graphene. The second electrode 129b can comprise at least one element of, for example, Al, Au, Cr, Ni, Ti or Sn.

[0021] Referring to Fig. 1D, the LED chip 120B can be used, similar to the embodiment from Fig. The LED chip 120B comprises the chip substrate 121 and the semiconductor stack body S located on the chip substrate 121. The semiconductor stack body S can include the buffer layer 122, the first conductivity type semiconductor layer 124, the active layer 125, and the second conductivity type semiconductor layer 126. Furthermore, the LED chip 120B can include a first and a second electrode structure E1 and E2, respectively, which are connected to the first and second conductivity type semiconductor layers 124 and 126.

[0022] The first electrode structure E1 has a connecting electrode 128a, e.g., a conductive via, which passes through the semiconductor layer 126 of the second conductivity type and the active layer 125, and is connected to the first semiconductor layer 124 of the first conductivity type and to the first electrode 129a, which is connected to the connecting electrode 128a. The connecting electrode 128a may be surrounded by an insulating section 127, which is electrically isolated from the active layer 125 and the semiconductor layer 126 of the second conductivity type. The connecting electrode 128a may be located in a region from which the semiconductor stack body S is etched. The number, shape, spacing, and contact area of ​​the connecting electrode 128a with the semiconductor layer 124 of the first conductivity type or the like may be advantageously designed to reduce contact resistance.Furthermore, the connecting electrodes 128a can be arranged to form rows and columns on the semiconductor stack body S to improve current flow. The second electrode structure E2 can comprise an ohmic contact layer 128b and the second electrode 129b, which are located on the semiconductor layer 126 of the second conductivity type.

[0023] The connecting electrode 128a and the ohmic contact layer 128b can each comprise a conductive material with ohmic properties for the semiconductor layers 124 and 126 of the first and second conductivity types in a single-layer or multi-layer structure, and can include, for example, Ag, Al, Ni, Cr, a transparent electrically conductive oxide (TCO) or the like.

[0024] The first and second electrodes 129a and 129b can each be connected to the connecting electrode 128a and the ohmic contact layer 128b to function as external terminals of the LED chip 120B. The first and second electrodes 129a and 129b can be, for example, Au, Ag, Al, Ti, W, Cu, Sn, Ni, Pt, Cr, NiSn, TiW, AuSn, or eutectic materials of the same. The first and second electrode structures E1 and E2 can be oriented in the same direction. The first and second electrode structures E1 and E2 can each be connected to the pair of first wiring electrodes 111.

[0025] Referring again to Fig. 1A and Fig. In 1B, the wavelength conversion layer 130 can be located directly on the LED chip 120, and a lateral surface of the wavelength conversion layer 130 can be surrounded by the lateral structure 160. A light emission region of the LED package 100A can be formed by the wavelength conversion layer 130 and can be defined by the lateral structure 160. The wavelength conversion layer 130 can comprise at least one type of wavelength conversion material that converts a portion of the light emitted from the LED chip 120 into light with a first wavelength that differs from the emitted wavelength. The wavelength conversion layer 130 can be a resin layer or a ceramic phosphor layer in which a wavelength conversion material is distributed. The wavelength conversion material can be, for example, a phosphor and / or a quantum dot.In one embodiment, the LED chip 120 can be a flash LED that emits blue light. The LED chip 120 can, for example, emit light with a predominant wavelength in the range of approximately 440 nm to 460 nm. In this case, the wavelength conversion material in the wavelength conversion layer 130 can comprise a phosphor or a quantum dot that converts some of the blue light into yellow light, or a plurality of phosphors or a plurality of quantum dots that convert some of the blue light into red and green light.

[0026] The optical lens 140 can, for example, be located directly on a top surface or a bottom surface of the electrochromic layer 150 and can condense or expand light passing through the wavelength conversion layer 130 to emit the light to an exterior space of the LED package 100A. In one embodiment, the optical lens 140 can be located on the top surface of the electrochromic layer 150, and at least a portion of a lateral surface of the optical lens 140 can be covered by a color layer 162 of the lateral structure 160. In one example, a top surface of the optical lens 140 can be coplanar with a top surface of the color layer 162 or a top surface of the lateral structure 160. The optical lens 140 can be located on the top surface of the electrochromic layer 150, and at least a portion of a lateral surface of the optical lens 140 can be covered by a color layer 162 of the lateral structure 160. B. include a diffractive optical element (DOE) lens, a microlens array (MLA) lens, a Fresnel lens, a flat lens, a metalinjection and / or the like.The optical lens 140 can include any polymer material, e.g., acrylic, polymethyl methacrylate (PMMA), polyvinyl chloride (PVC), polycarbonate (PC), epoxy, high-density polyethylene (HDPE) and / or silicone and a glass material, e.g., quartz glass, but is not limited to these.

[0027] The optical lens 140 is described below according to one embodiment with reference to Fig. 1E together with Fig. 1A and Fig. 1B described. Fig. 1E is an enlarged cross-sectional view of the optical lens 140 made of Fig. 1A. An internal vertex P in a plurality of grooves 140GR made of Fig. 1E is in Fig. 1B is represented by dashed lines.

[0028] Referring to Fig. 1A, Fig. 1B and Fig. The optical lens 140 can have a plurality of grooves 140GR etched into an area of ​​a light-transmitting film (e.g., a plastic film). The optical lens 140 can be arranged such that it faces the plurality of grooves 140GR and the wavelength conversion layer 130, but it can also be arranged in the opposite direction. The plurality of grooves 140GR can be considered as a plurality of individual lenses that have the same focal point. The optical lens 140 can adapt a light distribution pattern of light refracted by the LED package 100A. For example, the brightness of the refracted light in a central section may decrease and the angle of deflection of the refracted light may increase (e.g. 100° or more), or the brightness of the refracted light in the central section may increase and the angle of deflection of the refracted light may decrease (e.g. 50° or less).

[0029] In one embodiment, the optical lens 140 can have a first surface 140S1 facing the wavelength conversion layer 130 and the electrochromic layer 150, and a second surface 140S2 opposite the first surface 140S1, which has a substantially planar surface. The first surface 140S1 can have a plurality of grooves 140GR that are recessed in the direction of the second surface 140S2. The first surface 140S1 can have a Fresnel lens surface facing the wavelength conversion layer 130. The Fresnel lens can be an optical lens consisting of continuous, concentric grooves and can deflect parallel rays with a general focal length. The Fresnel lens can be used as a condenser, magnifying glass, or projection lens.

[0030] The optical lens 140 can include an adhesive section AP that partially contacts the upper or lower surface of the electrochromic layer 150 or an upper surface of the wavelength conversion layer 130. For example, the adhesive section AP of the optical lens 140 can extend along an edge of the optical lens 140. The adhesive section AP can be further spaced from the second surface 140S2; for example, the adhesive section AP can extend beyond the second surface 140S2, as opposed to a projection between the plurality of grooves 140GR. Therefore, an air gap AG can be formed between the first surface 140S1 and the electrochromic layer 150 or the wavelength conversion layer 130. The first surface 140S1 of the optical lens 140 can be rotationally symmetric about a central axis X parallel to the Z-axis and have a diameter d1 of the air gap AG, for example.The length or width ℓ4 of the optical lens 140, measured between the mutually facing surfaces of the adhesive section AP, may be smaller than the horizontal direction (the direction of the X-axis).

[0031] In one embodiment, the length or width ℓ4 of the optical lens 140 in the horizontal direction (the direction of the X-axis) can be longer than the length or width ℓ2 of the LED chip 120 in the horizontal direction (the direction of the X-axis) and can be shorter than, respectively, the length or width ℓ3 of the wavelength conversion layer 130 and the length or width ℓ5 of the electrochromic layer 150 in the horizontal direction (the direction of the X-axis). In one example, the height h of each of the plurality of grooves 140GR can be in a range of about 35 µm to about 65 µm, but embodiments are not limited thereto. In one example, the optical lens 140 can have an ultrathin layer shape in which the height h of each of the plurality of grooves 140GR is 1 µm or less.

[0032] The electrochromic layer 150 can be arranged, for example, directly on the wavelength conversion layer 130 and can be electrically connected to the pair of second wiring electrodes 112 of the substrate 110. The electrochromic layer 150 can have a predetermined color before the application of a voltage and can be converted so that it is transparent after the voltage is applied. Furthermore, the electrochromic layer 150 can be in an opaque state before the application of a voltage. The electrochromic layer 150 can comprise an electrochromic material. The electrochromic material can reversibly change its color through oxidation-reduction reactions caused by a voltage. The electrochromic material can control not only the color but also the transmittance of a voltage to ensure visibility. The electrochromic material can, for example, comprise a reducing dye material that includes an inorganic metal oxide, e.g.,Tungsten trioxide (WO3), titanium dioxide (TiO2) or niniobium pentoxide (Nb2O5), and an inorganic polymer material, e.g. polyaniline, polythiophene, polybiorgen or polypyrrole, and an oxidative dye material, e.g. iridium oxide (IrO2).

[0033] The electrochromic layer 150 can include an electrode capable of applying a voltage to a color-changing layer made of an electrochromic material. The electrode of the electrochromic layer 150 can be designed differently, taking into account the area of ​​the electrochromic layer 150 and the reaction time of the electrochromic material. The electrode of the electrochromic layer 150 can be electrically connected to the pair of secondary wiring electrodes 112 of the substrate 110 by a connecting element W, e.g., a bond wire, a flexible electrode, or the like. The electrochromic layer 150 can operate independently of the LED chip 120.The electrochromic layer 150 can maintain an opaque state (a state in which no voltage is applied) in the operational state of the LED chip 120 and can be switched to a transparent state (a state in which a voltage is applied) in an operating state (light emission) of the LED chip 120. The operational state of the LED chip 120 can be, for example, a state in which an application capable of operating the LED chip 120 (e.g., a camera application, a flashlight application, or the like) is running, and no operating command has been issued to the LED chip 120. Therefore, the electrochromic layer 150 can prevent a color (e.g., yellow) of the wavelength conversion layer 130 from being exposed to an external element of the LED package 100A, e.g., in the opaque state.Since the electrochromic layer 150 has a predetermined color before a voltage is applied, a color of the electrochromic layer 150 and a color of the color layer 162 of the lateral structure 160 can also be combined to design a different appearance for the LED package 100A.

[0034] Before a voltage is applied, the electrochromic layer 150 may, for example, have a light transmission (e.g., transmission to visible light) of less than 50% and may be opaque, or it may be black or a predetermined color. Furthermore, before a voltage is applied, the color of the electrochromic layer 150 may be substantially the same as the color of the color layer 162. In this case, "same color" may not refer to the exact same physical and optical color, but rather to the degree to which the same color is perceived in terms of a design or appearance. After a voltage is applied, the electrochromic layer 150 may exhibit a light transmission of approximately 80% or more. Therefore, the electrochromic layer 150 can provide an emission path for light generated by the LED chip 120 after a voltage is applied.

[0035] In one embodiment, the width ℓ5 of the electrochromic layer 150 can be larger than the width ℓ4 of the optical lens 140, and the edge region of the electrochromic layer 150 can partially overlap the color layer 162 in a vertical direction (OL1). This allows the electrochromic layer 150 to prevent the wavelength conversion layer 130 from being exposed by the optical lens 140. The width ℓ5 of the electrochromic layer 150 can be substantially the same as the width ℓ3 of the wavelength conversion layer 130; for example, the electrochromic layer 150 and the wavelength conversion layer 130 can completely overlap each other in a top view.

[0036] The lateral structure 160 can comprise the reflective layer 161, which covers at least a portion of a lateral surface of the LED chip 120, and the color layer 162, which is located on the wavelength conversion layer 130 and has a predetermined color. The reflective layer 161 can surround a lateral surface of both the LED chip 120 and the wavelength conversion layer 130 and can define a light-emitting region. The reflective layer 161 can comprise a resin body containing a reflective powder. The resin body can, for example, comprise silicone or epoxy resin. The reflective powder can comprise white ceramic powder or metal powder. The ceramic powder can, for example, be TiO2, Al2O3, Nb2O5, and / or ZnO. The metal powder can, for example, be Al or Ag. The reflective layer 161 can be designed such that it is higher than the height of an upper surface of the wavelength conversion layer 130, e.g.The upper surface of the reflective layer 161 can be higher than the upper surface of the conversion layer 130 relative to the substrate 110 to improve the efficiency with which light is condensed on the optical lens 140.

[0037] The color layer 162 can, for example, comprise a tone-enhancing agent, a dye, a pigment, or the like, representing a predetermined color in the epoxy resin. The color layer 162 can be located on the reflective layer 161 to prevent the wavelength conversion layer 130 or the like from being exposed to an external element, such as the appearance of the LED package 100A. A top surface of the color layer 162 can be coplanar with respect to a top surface of the optical lens 140; for example, the color layer 162 can directly touch and completely surround a perimeter of the optical lens 140. The thickness of the color layer 162 can be adjusted to reproduce a color and density required for a specific appearance.The color of the color layer 162 can be designed to match the color of the electrochromic layer 150 before a voltage is applied and the color of the exterior of an electronic device in which the LED package 100A is used. For example, the color of the color layer 162 can be substantially the same as the color of the electrochromic layer 150 before a voltage is applied and the color of the exterior of the electronic device in which the LED package 100A is used. The color of the color layer 162, the color of the electrochromic layer 150, and the color of the exterior of the electronic device are not limited to the same color and can be different colors depending on the design.

[0038] Fig. Figure 2 is a cross-sectional view showing an LED package 100B according to one embodiment. Fig. 2. Components that have the same reference symbols as those in Fig. 1A, which have the same or similar characteristics as those described above, and whose matching descriptions may therefore be omitted.

[0039] Referring to Fig. 2 In the LED package 100B, a length or width ℓ4 of the optical lens 140 can be substantially the same as the width ℓ3 of the wavelength conversion layer 130 and / or the width ℓ5 of the electrochromic layer 150 in the horizontal direction (the direction of the X-axis). In one embodiment, the optical lens 140 can be in contact with a top surface of the electrochromic layer 150, and the width ℓ4 of the optical lens 140 can be substantially the same as the width ℓ3 of the wavelength conversion layer 130 and the width ℓ5 of the electrochromic layer 150. An overlapping region (“OL1” in Fig. 1A) The electrochromic layer 150 and a color layer 162 may not be formed. The optical lens 140 may be configured to completely cover light-emitting regions defined by the wavelength conversion layer 130. As the diameter of an air gap between the optical lens 140 and the electrochromic layer 150 increases along with the width ℓ4 of the optical lens 140, the number of grooves 140GR of the optical lens 140 may also increase.

[0040] Fig. Figure 3 is a cross-sectional view of an LED package 100C according to one embodiment. Fig. 3. Components that have the same reference symbols as those in Fig. 1A, which have the same or similar characteristics as those described above, and matching descriptions of the same, may therefore be omitted.

[0041] Referring to Fig. In the LED package 100C, the length or width of the wavelength conversion layer 130, the optical lens 140, and / or the electrochromic layer 150 can be smaller than the width ℓ2 of an LED chip 120 in the horizontal direction (the direction of the X-axis). In one embodiment, the width ℓ3 of the wavelength conversion layer 130, the width ℓ4 of the optical lens 140, and the width ℓ5 of the electrochromic layer 150 can each be smaller than the width ℓ2 of the LED chip 120. The reflective layer 161 of the lateral structure 160 can cover a lateral surface of the wavelength conversion layer 130, a lateral surface of the optical lens 140, a lateral surface of the electrochromic layer 150, and at least a portion of a top surface of the LED chip 120. This allows the brightness of a refracted light in a central section of the refracted light and the range of the refracted light of the LED package 100C to increase.Furthermore, the optical lens 140 can be reduced to a minimum according to the design of the exterior of an electronic device in which the LED package 100C is used. In the drawing, the width ℓ3 of the wavelength conversion layer 130, the width ℓ4 of the optical lens 140, and the width ℓ5 of the electrochromic layer 150 are shown as having the same value, but they are not limited to this and can have different values.

[0042] Fig. Figure 4 is a cross-sectional view showing an LED package 100D according to one embodiment. Fig. 4. Components that have the same reference symbols as those in Fig. 1A, which have the same or similar characteristics as those described above, and matching descriptions of the same, may therefore be omitted.

[0043] Referring to Fig. 4. The electrochromic layer 150 in the LED package 100D can be located on the optical lens 140 and be exposed from a top side of the LED package 100D. In one embodiment, the optical lens 140 can be located on a bottom surface of the electrochromic layer 150, and the color layer 162 can cover at least a portion of a lateral surface of the electrochromic layer 150. A top surface of the electrochromic layer 150 can be coplanar with a top surface of the color layer 162. In one example, the electrochromic layer 150 can have a width ℓ5, which is substantially the same as, but not limited to, the width ℓ4 of the optical lens 140 to cover the optical lens 140.Since the electrochromic layer 150 can be located at the same height level as the color layer 162, the optical lens 140 or a wavelength conversion layer 130, even if the width ℓ5 of the electrochromic layer 150 is less than the width ℓ4 of the optical lens 140, may not be unobstructed with respect to the appearance of the LED package 100D. The optical lens 140 can be arranged such that it faces a Fresnel surface in the direction of the wavelength conversion layer 130, but it can also be arranged such that it faces the Fresnel surface in the direction of the electrochromic layer 150.

[0044] Fig. Figure 5A is a cross-sectional view showing an LED package 100E according to one embodiment, and Fig. 5B is an enlarged cross-sectional view of optical lens 140. Fig. 5A. In Fig. 5A and Fig. 5B can include components that have the same reference symbols as those in Fig. 1A and Fig. 1E, which have the same or similar characteristics as those described above, and matching descriptions of the same, may therefore be omitted.

[0045] Referring to Fig. 5A and Fig. In 5B, the LED package 100E can comprise the optical lens 140, which has a vent hole 140V extending from the first surface 140S1 to the second surface 140S2 and connected to the air gap AG. In one embodiment, the vent hole 140V can be formed in a central section of the optical lens 140. This prevents the optical lens 140 and the electrochromic layer 150 from separating during the manufacturing process of the LED package 100E. In one example, the planar shape of the vent hole 140V can be circular, but it is not limited to this. The planar shape of the vent hole 140V can, for example, be a rectangle. In another example, the vent hole 140V can have a shape in which a diameter d2 decreases as it approaches the second surface 140S2, but it is not limited to this.In one example, the diameter d2 of the ventilation hole 140V, located on the same surface as the second surface 140S2, can be in a range of approximately 50 µm to approximately 100 µm. Particles with a diameter of approximately 100 µm or less cannot significantly impair the light-emitting properties of the LED package 100E, even if they are introduced into the air gap AG through the ventilation hole 140V.

[0046] Fig. Figure 6A is a cross-sectional view showing an LED package 100F according to one embodiment. Fig. 6B is a cross-sectional view of a modified optical sensor in the LED package made of Fig. 6A and Fig. 6C is a top view of the optical sensor made of Fig. 6B. Fig. 6B is a cross-sectional view along line II' in Fig. 6C was carried out. Fig. 6A to 6C can be components that have the same reference numerals as those in Fig. 1A, which have the same or similar characteristics as those described above, and matching descriptions of the same, may therefore be omitted.

[0047] Referring to Fig. 6A The LED package 100F can further comprise an optical sensor 170, which includes a sensor chip 171 located on the substrate 110 and a light-receiving region RL, as well as a transparent protective layer 172. The optical sensor 170 can be electrically connected to a circuit on the substrate 110. The sensor chip 171 can have multiple terminals that are electrically connected to a terminal on the substrate 110. For example, the optical sensor 170 can be mounted on the substrate 110 using a flip-chip method, such that it is electrically connected to a third wiring electrode 116. In one example, the third wiring electrode 116 can be electrically connected to a third external wiring electrode 118 via the wiring via 113.The LED package 100F can be mounted on an external substrate and can transmit a signal from the optical sensor 170 externally via the third external wiring electrode 118. Alternatively, depending on various configurations of the optical sensor 170, it can be mounted on the substrate 110 by a wire-bonding process. The light-receiving region RL can be located on one side of a top surface of the sensor chip 171. The light-receiving region RL can comprise a photodiode array. The transparent protective layer 172 can comprise an insulating material, such as an epoxy resin.

[0048] In one embodiment, the optical sensor 170 has a light-receiving region RL for receiving ambient light, and the light-receiving region RL can be located adjacent to the LED chip 120, for example, along the X-axis. For instance, when a camera of an electronic device is operated, light emitted by the LED chip 120 can be used as illumination in a dark environment, and a camera image can be corrected using ambient light information from the optical sensor 170. The optical sensor 170 can be spaced apart from the LED chip 120 or the like by the reflective layer 161. In one embodiment, a lateral surface of the optical sensor 170 can be covered by the reflective layer 161. The reflective layer 161 can prevent light emitted by the LED chip 120 from reaching the optical sensor 170.An upper surface of the optical sensor 170 can be exposed through the color layer 162. In one example, the upper surface of the optical sensor 170 can be coplanar with an upper surface of the color layer 162.

[0049] Referring to Fig. 6B and Fig. In example 6C, an optical sensor 170' can comprise a conductor frame 173, the optical sensor chip 171 located on the conductor frame 173, and the transparent protective layer 172, located on the conductor frame 173 and surrounding the optical chip 171. The optical sensor chip 171 can comprise a plurality of terminals 171P, and each of the plurality of terminals 171P can be connected to the conductor frame 173 by the connecting element W. Furthermore, on a top surface of the optical sensor chip 171, the light-receiving region RL, adjacent to an edge thereof, and a peripheral circuit region PC, which can be a different region than the light-receiving region RL, can be arranged. The light-receiving region RL can comprise a plurality of photodiode cells and can detect light of different wavelength ranges.The light-receiving region RL can, for example, include a first region for detecting light in the visible range, a second region for detecting flicker, and a third region for detecting infrared rays. The peripheral circuit region PC can include a circuit device, such as a transistor. In one example, the conductor frame 173 can be connected to the third wiring electrode 116, which is located in . Fig. 6A shows that the components can be electrically connected either by direct contact or by a connecting element, e.g. a solder ball.

[0050] Fig. 7A and Fig. Figure 7B shows cross-sectional views, each depicting LED packages of 100Ga and 100Gb according to one embodiment. Fig. 7A and Fig. 7B can include components that have the same reference symbols as those in Fig. 1A and Fig. 6A, which have the same or similar characteristics as those described above, and matching descriptions of the same may therefore be omitted. Referring to Fig. 7A and Fig. Although only a single wiring electrode 112 is shown, the electrochromic layer 150 and additional second wiring electrodes can be connected together in 7B.

[0051] Referring to Fig. 7A and Fig. In LED packages 100Ga and 100Gb, the light-receiving region RL of the optical sensor 170 may be covered by the electrochromic layer 150, and a remaining portion of the optical sensor 170 not covered by the electrochromic layer 150 may be covered by the color layer 162. For example, the light-receiving region RL of the optical sensor 170 may overlap with at least a portion of the electrochromic layer 150 in the vertical direction (the direction of the Z-axis). When no voltage is applied, the light-receiving region RL of the optical sensor 170 may not be exposed with respect to the appearance of LED packages 100Ga and 100Gb, respectively.

[0052] During a Fig. In the embodiment shown in Figure 7A, the optical lens 140 can be located on an upper surface of the electrochromic layer 150, and the optical length 140 and the electrochromic layer 150 can cover at least a portion of the wavelength conversion layer 130 and at least a portion of the light-receiving region RL. The optical lens 140 and the electrochromic layer 150 can have widths ℓ4 and ℓ5, respectively, capable of covering both the wavelength conversion layer 130 and the light-receiving region RL. Therefore, before the application of a voltage, the wavelength conversion layer 130 and the light-receiving region RL may not be free with respect to an appearance, and the appearance of the LED package 100Ga can be expressed by a color of the electrochromic layer 150 and a color of the color layer 162.

[0053] During a Fig. In the embodiment shown in Figure 7B, the optical lens 140 can be located on a lower surface of the electrochromic layer 150, and the electrochromic layer 150 can cover at least a portion of the wavelength conversion layer 130 and at least a portion of the light-receiving region RL. The electrochromic layer 150 can have a width of ℓ5, which is capable of covering both the wavelength conversion layer 130 and the light-receiving region RL. Therefore, before the application of a voltage, the wavelength conversion layer 130 and the light-receiving region RL may not be exposed with respect to appearance, and the appearance of the LED package 100Gb can be expressed by a color of the electrochromic layer 150 and a color of the color layer 162.

[0054] Fig. Figure 8 is a perspective view showing an electronic device 10 in which an LED package can be inserted according to various embodiments, and Fig. 9A and Fig. Figure 9B are cross-sectional views, each showing a composite state of a transparent cover 12 of the electronic device 10 and LED packages 100a and 100b according to an embodiment.

[0055] First, referring to Fig. 8. The electronic device 10 can be a mobile phone, e.g., a smartphone. However, this is merely an example, and the electronic device 10 can be any electronic device that includes an optical window for an optical device (e.g., a light source, an optical sensor, a camera, or the like), such as a laptop, a desktop computer, a monitor, a tablet, a digital camera, or the like. The electronic device 10 can include a device casing 11 and a transparent cover 12 located on one side of the device casing 11, which includes a plurality of optical windows W1, W2, W3, W4, and W5. In one example, the optical windows W1, W2, W3, W4, and W5 can provide an optical path for a camera module, a flash module, or the like, mounted in the electronic device 10.Optical window W1 can, for example, create an optical path for a super wide-angle camera, optical window W2 can create an optical path for a wide-angle camera, and optical window W3 can create an optical path for a telephoto lens camera. Optical window W4 can create an optical path for an LED package. Optical window W5 can create an optical path for an optical environmental sensor, such as an IR sensor or similar device.

[0056] Referring to Fig. 9A and Fig. 8 together, an LED package 100a according to one embodiment can be located in the device housing 11 to emit light through the optical window W4. The LED package 100a can have various shapes according to embodiments. For example, the LED package 100a can have the configurations of the embodiments described in Fig. 1A, Fig. 2, Fig. 3, Fig. 4 and Fig. Figure 5A shows the LED package 100a located below the optical window W4, which is formed on the transparent cover 12. The transparent cover 12 can be a transparent substrate, such as glass, but is not limited to this. A light-blocking layer BL can be formed on a surface (e.g., a bottom surface) of the transparent cover 12. The light-blocking layer BL can block the transmission of light to any remaining area other than the optical window W4. Furthermore, the light-blocking layer BL can have a predetermined color. For example, the color of the light-blocking layer BL can be essentially the same color as that of the device cover 11, but it is not limited to this and can have different colors depending on the design.The diameter d3 of the optical window W4 can be smaller than the width ℓ1 of the LED package 100a or the substrate 110. Therefore, the light-blocking layer BL can partially overlap the LED package 100a. For example, the color layer 162 of the LED package 100a can have a region OL2 that partially overlaps the light-blocking layer BL in the vertical direction (the direction of the Z-axis). Therefore, the exterior of the electronic device 10, before a voltage is applied to the electrochromic layer 150 of the LED package 100a, can be expressed by a color of the device housing 11, a color of the light-blocking layer BL, a color of the color layer 162, and a color of the electrochromic layer 150. In one example, the color of the device casing 11, the color of the light-blocking layer BL, the color of the color layer 162 and the color of the electrochromic layer 150 can be essentially the same color before a voltage is applied.

[0057] Referring to Fig. 9B and Fig. In one embodiment, an LED package 100b can further comprise the optical sensor 170, which receives ambient light through the optical window W4. The LED package 100b can have various shapes according to different embodiments. For example, the LED package 100b can have the shape of the embodiments described in Fig. 6A, Fig. 7A and Fig. Figure 7B shows the light-receiving region RL of the optical sensor 170, which can be located in the optical window W4. The optical sensor 170 can receive ambient light through the optical window W4, which creates an optical path for a flash module. In this case, the optical window W5 can be made of Fig. 8 will be omitted.

[0058] Fig. Figures 10A to 10C are cross-sectional views of stages in a manufacturing process of the LED package 100A. Fig. 1A.

[0059] Referring to Fig. In device 10A, a plurality of LED chips 120 can be mounted on the substrate 110, and the wavelength conversion layer 130, the electrochromic layer 150, and the optical lens 140 can each be attached to the plurality of LED chips 120. The plurality of LED chips 120 can be mounted on the substrate 110 using a flip-chip method. The wavelength conversion layer 130, the electrochromic layer 150, and the optical lens 140 can be attached in such a way that they form an integrated state, or alternatively, they can be attached sequentially. The LED chip 120, the wavelength conversion layer 130, the electrochromic layer 150, and the optical lens 140 can be attached to one another by an adhesive element, e.g., epoxy or the like.

[0060] Referring to Fig. In 10B, the electrochromic layer 150 can be connected to a wiring electrode of the substrate 110, and the lateral structure 160 can be formed, covering a top surface of the substrate 110, a lateral surface of each of the LED chips 120, a lateral surface of each of the wavelength conversion layers 130, a lateral surface of each of the electrochromic layers 150, and a lateral surface of each of the optical lenses 140. The electrochromic layer 150 can be electrically connected to a circuit of the substrate 110 by means of the connecting element W, e.g., a wire or a flexible electrode. The reflective layer 161 and the color layer 162 can be formed sequentially in the lateral structure 160. The reflective layer 161 and the color layer 162 can be formed by applying and curing the aforementioned resin material.In one example, an upper surface of the color layer 162 can be coplanar with an upper surface of the optical lens 140.

[0061] Referring to Fig. In 10C, a plurality of LED packages 100 can be formed by separating the substrate 110 and the lateral structure 160 between adjacent LED chips 120. The substrate 110 and the lateral structure 160 can be separated using a blade B. However, embodiments are not limited to this, and the substrate 110 and the lateral structure 160 can be separated by a laser.

[0062] In retrospect and conclusion, it can be said that since an LED package can be exposed with respect to the exterior of an electronic device, an LED package that matches the exterior of the electronic device has been considered. One aspect of embodiments therefore creates an LED package that exhibits a predetermined color appearance and an electronic device that incorporates this.

[0063] According to embodiments, an electrochromic layer and a lateral color layer can be introduced to create an LED package that has a predetermined color appearance, as well as an electronic device that includes this.

[0064] This means that, according to embodiments, the electrochromic layer in the LED package can be configured to have a predetermined color before a voltage is applied and then converted to be transparent after the voltage is applied. Therefore, when a camera module or flash module is in a standby state, the exterior of an electronic device can be standardized to have the same color as a predetermined color of the electrochromic layer in the LED package.

[0065] Exemplary embodiments have been disclosed herein, and although specific terms are used, they are used in a general and descriptive sense and should be interpreted as such and not for the purpose of limitation. It will be apparent to a person skilled in the art at the time of filing the present application that, in some cases, unless otherwise stated, features, properties, and / or elements described in connection with a particular embodiment may be used alone or in combination with features, properties, and / or elements described in connection with other embodiments. Accordingly, it will be apparent to a person skilled in the art that various modifications regarding the shape and details may be made without departing from the scope of the present invention as set out in the subsequent claims.

Claims

Light-emitting diodes, hereinafter referred to as LEDs, -package comprising: a substrate (110) comprising a pair of first wiring electrodes (111) and a pair of second wiring electrodes (112); an LED chip (120; 120A; 120B) on the substrate (110), wherein the LED chip (120; 120A; 120B) is electrically connected to the pair of first wiring electrodes (111); a wavelength conversion layer (130) on the LED chip (120; 120A; 120B); an electrochromic layer (150) on the wavelength conversion layer (130), wherein the electrochromic layer (150) is electrically connected to the pair of second wiring electrodes (112), and the electrochromic layer (150) is configured to have a first color before the application of a voltage and to be transparent after the application of the voltage; an optical Lens (140) on the electrochromic layer (150);and a lateral structure (160) comprising a reflective layer (161) covering at least one section of a lateral surface of each the LED chip (120; 120A; 120B) and the wavelength conversion layer (130), and a color layer (162) on the reflective layer (161) and having a second color. LED package according to claim 1, wherein the optical lens (140) is on an upper surface of the electrochromic layer (150), wherein the color layer (162) covers at least a section of a lateral surface of the optical lens (140). LED package according to claim 2, wherein a width of the electrochromic layer (150) is greater than a width of the optical lens (140), wherein an edge region of the electrochromic layer (150) overlaps the color layer (162) in a vertical direction. LED package according to claim 2 or 3, wherein the optical lens (140) has an upper surface which is substantially coplanar with an upper surface of the color layer (162). LED package according to one of claims 2 to 4, wherein the electrochromic layer (150) has the same width as the wavelength conversion layer (130). LED package according to claim 1, wherein the optical lens (140) is on a lower surface of the electrochromic layer (150), wherein the color layer (162) covers at least a section of a lateral surface of the electrochromic layer (150). LED package according to claim 6, wherein an upper surface of the electrochromic layer (150) is coplanar with an upper surface of the color layer (162). LED package according to one of claims 1 to 7, wherein the first color and the second color are essentially the same color. LED package according to one of claims 1 to 8, wherein: the optical lens (140) has a first surface (140S1) facing the wavelength conversion layer (130) and a second surface (140S2) facing the first surface (140S1), and the first surface (140S1) comprises grooves (140GR) recessed in the direction of the second surface (140S2). LED package according to claim 9, further comprising an air gap (AG) between the first surface of the optical lens (140) and the wavelength conversion layer (130). LED package according to one of claims 1 to 10, further comprising an optical sensor (170) on the substrate (110), wherein the optical sensor (170) comprises a light receiving region (RL) and the light receiving region (RL) of the optical sensor (170) extends in a direction adjacent to the LED chip (120; 120A; 120B). LED package according to claim 11, wherein a lateral surface of the optical sensor (170) is covered by the reflective layer (161) of the lateral structure (160). LED package according to claim 11 or 12, wherein the light receiving region (RL) overlaps the electrochromic layer (150) in a vertical direction. LED package according to one of claims 11 to 13, wherein the optical lens (140) is on an upper surface of the electrochromic layer (150), wherein the optical lens (140) and the electrochromic layer (150) cover at least a section of the wavelength conversion layer (130) and the light receiving region (RL), respectively. LED package according to one of claims 11 to 13, wherein the optical lens (140) is on a lower surface of the electrochromic layer (150), wherein the electrochromic layer (150) covers at least a part of the wavelength conversion layer (130) and the light receiving region (RL), respectively. LED package according to one of claims 1 to 15, wherein the pair of first wiring electrodes (111) and the pair of second wiring electrodes (112) are electrically isolated from each other within the substrate (110). Light-emitting diodes, hereinafter referred to as LEDs, -package comprising: a substrate (110); an LED chip (120; 120A; 120B) on the substrate (110); a wavelength conversion layer (130) on the LED chip (120; 120A; 120B); an electrochromic layer (150) on the wavelength conversion layer (130), wherein the electrochromic layer (150) is configured to be opaque before the application of a voltage and to be transparent after the application of the voltage; and a reflective layer (161) covering a lateral surface of the LED chip (120; 120A; 120B) and a lateral surface of the wavelength conversion layer (130). LED package according to claim 17, wherein, prior to the application of the voltage, the light transmission of the electrochromic layer (150) is less than 50% and the electrochromic layer (150) has a predetermined color. LED package according to claim 17 or 18, wherein, before the voltage is applied, the light transmission of the electrochromic layer (150) is 80% or more. Electronic device comprising: a device housing (11) comprising a transparent cover (12) with an optical window (W4), wherein the device housing (11) has a third color; and a light-emitting diode, hereinafter referred to as LED, package (100a; 100b; 100c; 100d; 100e; 100f; 100Ga; 100Gb) according to any one of the preceding claims within the device housing (11), wherein the LED package (100a; 100b; 100c; 100d; 100e; 100f; 100Ga; 100Gb) is configured to emit light through the optical window (W4).

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