Scale and optical position measuring device with this scale

Abstract

A scale for an optical position measuring device comprises a substrate, a first reflector layer arranged on the substrate, a transparent spacer layer arranged on the reflector layer, a structured second reflector layer arranged on the spacer layer, and a protective layer of defined thickness arranged on the top surface of the scale above the second reflector layer. The protective layer is also arranged on the side surfaces of the scale.

Description

AREA OF TECHNOLOGY

[0001] The present invention relates to a physical dimension for an optical position measuring device, and to an optical position measuring device with such a physical dimension. A displacement between the physical dimension and the scanning unit, or the relative position of the physical dimension and the scanning unit, can be detected by optically scanning such a physical dimension using a scanning unit. STATE OF THE ART

[0002] Optical position measuring devices based on the optical scanning of physical standards are used for high-precision position detection, including in semiconductor manufacturing equipment. For example, it is known to precisely determine the position of the wafer table relative to the imaging optics in lithography devices using such optical position measuring devices. In the case of EUV lithography devices, position determination may be required in areas of such devices where high-energy electromagnetic radiation is used. Under certain circumstances, the EUV radiation could damage components of the position measuring device, particularly the physical standard itself. Furthermore, the physical standard could also be damaged by the free hydrogen radicals present in such environments.These effects result from the interaction of EUV radiation with the hydrogen gas present, as described, for example, in the publication by MvdKerkhof et al., EUV-induced hydrogen plasma and particle release, Radiation Effects & Defects in Solids, 2022, Vol. 177, Nos. 5-6, pp. 486-512. Undesired material removal from the physical specimens used could then potentially lead to contamination of the mirror optics in the EUV lithography apparatus.

[0003] A generic physical measure for an optical position measuring device is known from EP 1436647 B1. The one described therein Fig. Two proposed reflective phase gratings comprise a substrate on which a first aluminum reflector layer, a transparent spacer layer, a structured second chromium reflector layer, and a protective layer are applied. A sol-gel protective layer or, alternatively, a spin-on-glass layer is proposed as the protective layer. Neither the protective layer materials nor the proposed protective layer design reliably ensure that the scale is sufficiently resistant to hydrogen radicals and EUV radiation when used in EUV lithography devices. Furthermore, these layers are typically applied using a spin-coating process. The resulting manufacturing-related variations in the thickness of the sol-gel or spin-on-glass layer also negatively impact the achievable diffraction efficiencies required for high-precision measurement systems. SUMMARY OF THE INVENTION

[0004] The object of the invention is to further improve the stability of the standard of measurement known from the prior art or a position measuring device equipped therewith with regard to its stability against high-energy electromagnetic radiation.

[0005] This problem is solved by a physical embodiment according to claim 1 or by a position measuring device according to claim 9. Advantageous details are set out in the dependent claims.

[0006] The scale according to the invention for an optical position measuring device comprises a carrier substrate, a first reflector layer arranged on the carrier substrate, a transparent spacer layer arranged on the reflector layer, a structured second reflector layer arranged on the spacer layer, and a protective layer of a defined thickness arranged on the upper surface of the scale above the second reflector layer. The protective layer is also arranged on the side surfaces of the scale.

[0007] Preferably, the thickness of the protective layer on the side surfaces of the scale is chosen to be 5-10 times smaller than the thickness of the protective layer on the top surface of the scale.

[0008] It is possible that, - that the thickness of the protective layer on the scale's side surfaces is 30nm + / - 10% and the thickness of the protective layer on the scale's top surface is 210nm + / - 2%, or - that the thickness of the protective layer on the scale body side surfaces is 60nm + / - 10% and the thickness of the protective layer on the scale body top surface is 420nm + / - 2%.

[0009] It is advantageous that the protective layer consists of a material that prevents material erosion in the substrate and / or in the reflector layers and / or in the spacer layer caused by hydrogen radicals.

[0010] The protective layer can consist of one of the following materials: - Titanium oxide (TiO₂) x , x = 2 - 4) - Ruthenium oxide (RuO2) - Chromium oxide (Cr2O3) - Vanadium oxide (V2O5) - Niobium oxide (Nb2O5)

[0011] In one possible embodiment, the first reflector layer consists of aluminum, the spacer layer of silicon oxide or titanium oxide, and the second reflector layer of chromium.

[0012] Furthermore, it may be provided that - the first reflector layer has a layer thickness in the range [20nm - 120nm], - the spacer layer has a thickness in the range [130nm - 170nm], and - the second reflector layer has a layer thickness in the range [20nm - 50nm].

[0013] Preferably, the exposed underside of the support substrate is not covered with the protective layer.

[0014] An optical position measuring device comprises a measuring element according to the invention and a scanning unit movable relative to it, wherein the scanning unit is designed for optical scanning of the measuring element with light of a defined wavelength.

[0015] Advantageously, the scanning unit includes a light source that emits light with a wavelength of 976nm.

[0016] It proves advantageous if the thickness of the protective layer on the upper surface of the scale is chosen such that the intensity of the beams of radiation diffracted by the scale into the + / - 1st order is at least 25% of the intensity of the incident beams of radiation.

[0017] It can be provided that the thickness (d OS ) the protective layer on the top surface of the scale when light is incident perpendicularly according to dOS=m⋅(λ / 2n)+ / −2% is chosen with d OS := Thickness of the protective layer on the top side of the scale m := 1, 2, 3, 4 λ := wavelength of the light used for scanning n := Refractive index of the protective layer

[0018] The advantage of the scale according to the invention is its efficient protection against EUV radiation and hydrogen radicals. Damage or degradation of the scale's layers can be reliably prevented. Furthermore, it is ensured that even in such environments, no material loss occurs on the scale that could affect other sensitive components, such as the mirrors in EUV lithography devices. At the same time, high diffraction efficiency of the scale is guaranteed, meaning that the optical scanning for generating highly accurate position-dependent scanning signals is not affected by the measures according to the invention.

[0019] In the case of using titanium oxide (TiO2) as the protective layer material, it can be applied using a sputtering process. This process enables the coating of the top and side surfaces of the physical embodiment according to the invention in a single step. Furthermore, the sputtering process allows for extremely precise adjustment of the thickness of the protective layer, which is approximately + / - 3% within the range of the target protective layer thicknesses.

[0020] Further advantages and details of the present invention will become apparent from the following description of an exemplary embodiment with reference to the figures. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] This shows Fig. 1a a highly schematic representation of an optical position measuring device with the dimensioning body according to the invention in a first sectional view; Fig. 1b a highly schematic representation of an optical position measuring device with the dimensioning body according to the invention in a second sectional view; Fig. 2 a representation with a simulation of the dependence of the diffraction efficiency on the protective layer thickness in an embodiment of the dimensioning instrument according to the invention. DESCRIPTION OF THE EXECUTION FORMS

[0022] Based on the sectional views in the highly schematic Fig. 1a and Fig. 1b below describes an optical position measuring device in which a dimensioning body designed according to the invention is used.

[0023] In the illustrated embodiment, the position measuring device is designed as a length measuring system and comprises, in addition to the measuring element 10, a scanning unit 20. The measuring element 10 and the scanning unit 20 are movable relative to each other along the measuring direction x. Machine components, for example, can be connected to the measuring element 10 and the scanning unit 20. These components are movable relative to each other along the measuring direction x, and their relative position can be detected using the position measuring device. Position-dependent scanning signals generated by the position measuring device are used by a control unit (not shown) to control the motion of the machine components.

[0024] The dimensional standard, which will be described in detail below, can of course be used not only in position measuring devices designed as length measuring systems. Furthermore, it is also possible to design dimensional standards for rotary position measuring devices that detect the rotational movement of two objects moving relative to each other around a rotational axis. Likewise, two- or multi-dimensional position measuring devices can also be equipped with dimensional standards according to the invention, enabling position measurement along several linear and / or rotary measuring directions, etc.

[0025] For optical scanning of the scale 10 and for generating the scanning signals, the scanning unit 20 comprises a light source 21 that emits light of a defined wavelength λ; in a preferred embodiment, a light source 21 is used that emits light with a wavelength λ = 976 nm. The beams of light generated by the light source 21 first pass through a scanning grating 22 in the scanning unit 20, then strike the scale 10, and subsequently pass through the scanning grating 22 a second time before encountering a detector arrangement 23 in the scanning unit 20. The figures show only a highly schematic, simplified scanning beam path, as the specific optical scanning method is not essential to the present invention. Naturally, a wide variety of optical scanning principles can be employed.Details of a suitable optical scanning principle can be found, for example, in EP 1762828 A2.

[0026] The scanned, inventive scale 10 has a support substrate 11, which preferably consists of a material with a particularly low coefficient of thermal expansion. A suitable material for this purpose is, for example, a glass ceramic available under the name Zerodur. However, other materials with a low coefficient of thermal expansion can also be used for the support substrate 11, such as the glass ceramic Clearceram, borofloat glass, or quartz glass. A typical thickness of the support substrate 11 is in the range of [5 mm - 20 mm].

[0027] A first reflector layer 12 is arranged or applied to the support substrate 11, wherein in the present example a full-surface coating of the support substrate 11 with the first reflector layer 12 is provided. Aluminum is suitable as the material for the first reflector layer 12, which is vapor-deposited with a layer thickness in the range [20 nm - 120 nm].

[0028] A transparent spacer layer 13 is arranged above or on top of the first reflector layer 12, as shown in the Fig. 1a and Fig. As can be seen in the illustrated embodiment, the spacer layer 13 is arranged across the entire surface of the first reflector layer 12. The spacer layer 13 is made of silicon dioxide (SiOx) with a refractive index n = 1.46, applied in a thickness of [120 nm - 170 nm]. Titanium dioxide (TiOx) could also be used as an alternative material for the spacer layer.

[0029] A structured second reflector layer 14 is arranged above the spacer layer 13. This layer consists of sub-areas 14a, 14b of different optical transmittances arranged alternately in the measuring direction x, wherein, in this case, opaque sub-areas 14a are made of chromium and fully transparent sub-areas 14b are provided. The sub-areas 14a, 14b form the measuring scale of the inventive scale 10 and, in the case of an incremental measuring scale, consist of line-shaped sub-areas 14a, 14b arranged periodically along the measuring direction x, the longitudinal direction of which is oriented perpendicular to the measuring direction x, i.e., along the y-direction shown in the figures. To produce the structured second reflector layer 14, the material of the opaque sub-areas 14a, i.e., chromium, is first deposited over the entire surface and then removed again in the transparent sub-areas 14b via a suitable lithographic process.The thickness of the second reflector layer 14 is preferably chosen in the range [20nm - 50nm].

[0030] A protective layer 15 is applied to the upper surface 10a of the scale body above the second reflector layer 14; according to the invention, the protective layer 15 is also arranged on the side surfaces 10b of the scale body. The upper surface 10a of the scale body is understood to be the side of the scale body 10 facing the scanning unit, i.e., the side with the second structured reflector layer 14. Only the exposed underside 10c of the carrier substrate 11 is not covered by the protective layer 15 on the side of the scale body 10. The scale body 10 is typically mounted via the underside 10c onto a carrier (not shown), which in turn is arranged on a machine component, by means of a suitable fastening method such as gluing or optical bonding.

[0031] In this way, the part of the scale 10 that is exposed to the respective measurement environment, i.e., the scale's top surface 10a and side surfaces 10b, is reliably protected against external influences such as high-energy radiation and / or hydrogen radicals. The underside 10c of the support substrate 11, which is not covered with the protective layer 15, is not normally exposed to these influences due to its mounting on a support and therefore requires no further protective measures.

[0032] Titanium oxide (TiO₂) is a particularly advantageous material for the protective layer 15. x, x = 2 - 4 suitable; other, fundamentally suitable materials for the protective layer would be, for example, ruthenium oxide RuO2, chromium oxide Cr2O3, vanadium oxide V2O5 or niobium oxide Nb2O5. In general, the protective layer 15 should consist of a material that prevents material erosion in the support substrate 11 and / or in the reflector layers 12, 14 and / or in the spacer layer 13 caused by hydrogen radicals.

[0033] The respective protective layer material is preferably applied to the upper surface 10a and the side surfaces 10b of the scale body using a sputtering process. In this process, the scale body 10 is laid flat against the sputtering target with the second structured reflector layer 14 in a sputtering system. This prevents the underside 10c of the support substrate 11 from being unintentionally coated with the protective layer material. Furthermore, this arrangement results in a directional (isotropic) coating of the upper surface 10a and an undirectional (anisotropic) coating of the side surfaces 10b. By appropriately selecting the sputtering parameters, different deposition rates of the protective layer material can be set on the upper surface 10a and the side surfaces 10b, respectively, resulting in different thicknesses d. OS, d SF the protective layer 15 on the upper surface 10a of the scale and the side surfaces 10b of the scale. Preferably this is done such that the thickness d SF The thickness of the protective layer 15 on the scale body side surfaces is 5-10 times smaller than the thickness d. OS the protective layer on the scale surface 10a. It should be noted at this point that the representation of the protective layer thicknesses d SF , d OS in the Fig. 1a, Fig. 1b is not reproduced to scale according to the above dimensioning rule, but is only indicated in a highly schematic way.

[0034] When dimensioning the thickness of the protective layer, the following must be taken into account: OSon the upper surface 10a of the scale body, i.e., above the second structured reflector layer 14, the intensity of the beams diffracted by the scale body 10 into the + / - 1st order is only affected to the extent that it is at least 25% of the intensity of the incident beams; otherwise, the optical scanning of the scale body 10 and thus the generation of the high-precision position-dependent scanning signals would be negatively affected. The thickness dimensioning in the scale body according to the invention is therefore such that the thickness d OS the protective layer 15 on the upper surface of the scale 10a when the light is incident perpendicularly according to the relationship dOS=m⋅(λ / 2n)+ / −2% is chosen with d OS := Thickness of the protective layer on the top side of the scale m := 1, 2, 3, 4 λ := wavelength of the light used for scanning n := Refractive index of the protective layer 15

[0035] Regarding the choice of layer thickness d OS On the upper surface of the scale body 10a according to the above condition, it is ensured that the phase grating effect of the scale body 10 according to the invention, which is required for optical scanning, is not disturbed or is only disturbed to a minor extent.

[0036] Choosing the parameter m in the specified range 1-4 is therefore advantageous, since larger values ​​for m and thus even larger thicknesses d OS The scattering of the reflected partial beams would increase at defects in the protective layer 15 on the upper surface 10a of the scale. Such defects scatter the light used for scanning and can thus reduce the required accuracy of the position measuring device. Furthermore, excessive layer thicknesses d could lead to OS in the area of ​​d OS> 1 µm can also lead to flaking of the protective layer 15 if stresses between the protective layer 15 and the other dimensional materials can no longer be relaxed.

[0037] For a wavelength of λ = 976 nm, the following layer thicknesses d result for m = 1 or m = 2 and the use of the protective layer material titanium oxide with a refractive index n = 2.3. OS = 210nm + / - 2% (m = 1) and d OS = 420 nm + / - 2% (m = 2) on the top surface of the scale 10a as suitable dimensioning parameters. According to the dimensioning rule for the thicknesses d given above. SF The thickness d of the protective layer 15 on the dimensioned side surfaces 10b could be SF the protective layer 15 on the dimensioning body side surfaces 10b then d SF = 30nm + / - 10% (m = 1) or d SF = 60nm + / - 10% (m = 2) should be chosen.

[0038] In Fig.Figure 2 is a representation of a simulation of the resulting diffraction efficiency + / - 1st order of a dimensioning element according to the invention as a function of the layer thickness d. OS shown on the upper surface of the scale, where the scale is illuminated with light polarized perpendicular to the line-shaped sections of the scale with a wavelength of λ = 976 nm. For the parameters m = 1 and m = 2, the following is shown for the layer thicknesses d OS = 210nm (m = 1) and d OS = 420nm (m = 2) taking into account the above-mentioned tolerances for d OS a sufficient diffraction efficiency in the range of more than 25%. This behavior applies analogously to radiation polarized parallel to the line-shaped sub-regions of the measurement division with a wavelength λ = 976 nm.

[0039] In addition to the exemplary embodiment described above, there are of course other alternative embodiments of the present invention. QUOTES INCLUDED IN THE DESCRIPTION

[0000] This list of documents cited by the applicant was automatically generated and is included solely for the reader's convenience. The list is not part of the German patent or utility model application. The DPMA accepts no liability for any errors or omissions. Cited patent literature

[0000] EP 1436647 B1

[0003] EP 1762828 A2

[0025] Cited non-patent literature

[0000] MvdKerkhof et al., EUV-induced hydrogen plasma and particle release, Radiation Effects & Defects in Solids, 2022, Vol. 177, Nos. 5-6, p. 486 - 512

[0002]

Claims

[1] Scale for an optical position measuring device with - a carrier substrate, - a first reflector layer arranged on the carrier substrate, - a transparent spacer layer arranged on the first reflector layer, - a structured second reflector layer arranged on the spacer layer with sub-areas of different optical transmittance, as well as - a protective layer with a defined thickness (d) arranged on the upper surface of the scale above the second reflector layer OS ), characterized by , that the protective layer (15) is also arranged on the dimensioning body side surfaces (10b). [2] Physical embodiment according to at least one of the preceding claims, characterized by , that the thickness (d SF ) the protective layer (15) on the scale body side faces (10b) is 5-10 times smaller than the thickness (d) OS) the protective layer (15) on the top surface (10a) of the scale body is selected. [3] Physical embodiment according to claim 2, characterized by , - that the thickness (d SF ) the protective layer (15) on the scale side faces (10b) 30nm + / - 10% and the thickness (d OS ) the protective layer (15) on the top surface of the scale (10a) is 210nm + / - 2%, or - that the thickness (d SF ) the protective layer (15) on the scale side faces (10b) 60nm + / - 10% and the thickness (d OS ) the protective layer (15) on the top surface of the scale (10a) is 420nm + / - 2%. [4] Physical embodiment according to at least one of the preceding claims, characterized by , that the protective layer (15) consists of a material that prevents material erosion in the support substrate (11) and / or in the reflector layers (12, 14) and / or in the spacer layer (13) caused by hydrogen radicals. [5] Embodiment of measure according to at least one of the preceding claims, characterized by , that the protective layer (15) consists of one of the following materials: - Titanium oxide (TiO₂) x , x = 2 - 4) - Ruthenium oxide (RuO2) - Chromium oxide (Cr2O3) - Vanadium oxide (V2O5) - Niobium oxide (Nb2O5) [6] Physical embodiment according to at least one of the preceding claims, characterized by , that the first reflector layer (12) is made of aluminium, the spacer layer (13) of silicon oxide or titanium oxide and the second reflector layer (14) of chromium. [7] Physical embodiment according to at least one of the preceding claims, characterized by , that - the first reflector layer (12) has a layer thickness in the range [20nm - 120nm], - the spacer layer (13) has a layer thickness in the range [130nm - 170nm], and - the second reflector layer (14) has a layer thickness in the range [20nm - 50nm]. [8] Physical embodiment according to at least one of the preceding claims, characterized by , that the exposed underside (10c) of the support substrate (11) is not covered with the protective layer (15). [9] Optical position measuring device, characterized by a physical embodiment (10) according to one of the preceding claims and a scanning unit (20) movable relative thereto, wherein the scanning unit (20) is designed for optical scanning of the physical embodiment (10) with light of a defined wavelength (λ). [10] Optical position measuring device according to claim 9, characterized by , that the scanning unit (20) includes a light source (11) which emits light with a wavelength (λ) of 976nm. [11] Optical position measuring device according to claim 9, characterized by , that the thickness (d OS) the protective layer (15) on the upper surface of the scale body (10a) is selected such that the intensity of the beams of radiation diffracted by the scale body (10) into the + / - 1st order is at least 25% of the intensity of the incident beams of radiation. [12] Optical position measuring device according to claim 9 or 11, characterized by , that the thickness (d OS ) the protective layer (15) on the upper surface of the scale (10a) when light is incident perpendicularly according to dOS=m⋅(λ / 2n)+ / −2% is chosen with d OS := Thickness of the protective layer on the top side of the scale m := 1, 2, 3, 4 λ := wavelength of the light used for scanning n := Refractive index of the protective layer

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