Light-emitting display device

Abstract

A light-emitting display device is disclosed. The light-emitting display device according to the present disclosure comprises: a first pixel (PG) providing first light, a second pixel (PR) providing second light, and a third pixel (PB) providing third light, wherein the first pixel (PG), the second pixel (PR), and the third pixel (PB) are arranged in a matrix on a substrate (110); anode electrodes (ANO1, ANO2, ANO3) arranged in an associated manner in the first pixel (PG), the second pixel (PR), and the third pixel (PB), each anode electrode comprising a light-transmitting layer (TRL) and a reflective layer (REF) arranged under the light-transmitting layer (TRL); a first emission layer (E1) arranged in the first pixel (PG) and the second pixel (PR) on the anode electrodes (ANO1, ANO2, ANO3);a second emission layer (E2) disposed on the anode electrode in the third pixel (PB); a cathode electrode (CAT) on the first emission layer (E1) and the second emission layer (E2); and a resonance layer (CAL) disposed on one of the top and bottom surfaces of the first emission layer (E1);

Description

CROSS REFERENCE TO RELATED APPLICATIONSThis application claims priority to and the benefit of Korean Patent Application No. 10-2023-0 181 716 filed on Dec. 14, 2023.FIELD OF THE INVENTIONThe present disclosure relates to a light emitting display device having a micro-cavity structure, and more particularly relates to, for example, without limitation, a light emitting display device that exhibits higher light intensity efficiency with low power consumption by applying a simplified micro-cavity structure to ultra high resolution.DISCUSSION OF RELATED ARTIn particular, the light emitting display device, which is a self-luminous display, has excellent optical performance such as a viewing angle and a color rendering degree, so that its application range is gradually widened and it is attracting attention as an image display device. Because of these advantages, it attracts attention as a most suitable display for implementing 4K ultra-high resolution displays and up to 8K ultra-high resolution displays. As the resolution increases, the size of the pixel becomes smaller and the size of the emission area occupied in the pixel also becomes smaller. When the size of a pixel in the electroluminescence display becomes small, it is preferable to employ a top emission type structure to maximize the size ratio of the emission area in the pixel.The description provided in the discussion of the related art section should not be considered as prior art solely because it is mentioned in or associated with that section. The discussion of the related art section may include information describing one or more aspects of the subject technology, and the description in this section does not limit the invention.OVERVIEWThe present inventors found that in a structure implementing ultra high resolution over 3000 PPI pixel density, it is very important to increase the luminous efficiency due to the very small size of the pixel. For example, it is possible to increase the luminous efficiency by employing the micro-cavity structure. When a micro cavity is employed, the structure of the light emitting display device may become complicated, and manufacturing cost may increase. Therefore, there is a need to develop a micro cavity structure that has a simple structure, low manufacturing cost, and improved light efficiency with low power consumption.The object of the present disclosure, as for solving the above-described problems, is to provide a light emitting display device having a micro-cavity structure that improves a luminous efficiency. Another object of the present disclosure is to provide a light emitting display device having a higher luminous efficiency with low power consumption by applying a simplified micro cavity structure to ultra high resolution.In order to achieve the above objects of the present disclosure, there are provided a light emitting display device according to claim 1 and a light emitting display device according to claim 20. Further embodiments are described in the dependent claims. A light emitting display device according to an aspect of the present disclosure includes: a first pixel that provides first light, a second pixel that provides second light, and a third pixel that provides third light, the first pixel, the second pixel, and the third pixel being arranged on a substrate in a matrix; anode electrodes arranged in the first pixel, the second pixel, and the third pixel in an associated manner, each anode electrode including a light transmissive layer and a reflective layer arranged below the light transmissive layer; a first emission layer arranged on the anode electrodes in the first pixel and the second pixel; a second emission layer arranged on the anode electrode in the third pixel; a cathode electrode on the first emission layer and the second emission layer; and a resonant layer disposed on one of an upper side and a lower side of the first emission layer.In at least one embodiment, a first distance between the reflective layer and the cathode electrode in the first pixel is set to a first resonance distance corresponding to an integer multiple of half wavelength of the first light. A second distance between the reflective layer and the cathode electrode in the second pixel is set to a second resonance distance corresponding to an integer multiple of half the wavelength of the second light. A third distance between the reflective layer and the cathode electrode in the third pixel is set to a third resonance distance corresponding to an integer multiple of half the wavelength of the third light.In at least one embodiment, a thickness of the first emission layer corresponds to the first resonance distance. A total thickness of the first emission layer and the resonant layer corresponds to the second resonant distance. The thickness of the second emission layer corresponds to the third resonance distance.In at least one embodiment, the first light is green light. The second light is red light. The third light is blue light.In at least one embodiment, the first light is red light. The second light is green light. The third light is blue light.In at least one embodiment, anode electrodes include: a first anode electrode disposed in first pixel; a second anode electrode disposed in second pixel; and a third anode electrode disposed in third pixel. The second anode electrode includes the light transmissive layer and the resonant layer. The cathode electrode includes a semi-transmissive layer that transmits some portions of light provided by the first emission layer and the second emission layer and reflects the remaining portions of the light.In at least one embodiment, the first anode electrode and the third anode electrode include the reflective layer and the transmissive layer. The second anode electrode includes the reflective layer, the light transmissive layer, and the resonant layer.In at least one embodiment, a total thickness of the first emission layer and the resonant layer corresponds to the first resonant distance. A thickness of the first emission layer corresponds to the second resonance distance. A thickness of the second emission layer corresponds to the third resonance distance. In at least one embodiment, the second anode electrode and the third anode electrode include the reflective layer and the transmissive layer. The first anode electrode includes the reflective layer, the light transmissive layer, and the resonant layer.In at least one embodiment, the cathode electrode includes: a light transmissive cathode layer; and a semi-light transmissive cathode layer on the light transmissive layer. The resonant layer is disposed in the second pixel at one of between the transparent cathode layer and the semi-transparent cathode layer and below the transparent cathode layer.In at least one embodiment, in the first pixel, a first distance between the reflective layer and the semi-transmissive cathode layer is set to a first resonance distance corresponding to an integer multiple of half the wavelength of the first light. A second distance between the reflective layer and the semi-transmissive cathode layer is set at a second resonance distance corresponding to an integer multiple of half the wavelength of the second light in the second pixel. A third distance between the reflective layer and the semi-transmissive cathode layer in the third pixel is set to a third resonance distance corresponding to an integer multiple of half the wavelength of the third light.In at least one embodiment, the first emission layer includes: a first light emitting layer that provides the first light; a charge generation layer disposed on the first light emitting layer; and a second light emitting layer disposed on the charge generation layer and that provides the second light.In at least one embodiment, the first light emitting layer comprises a first light emitting material providing green light. The second light emitting layer comprises a second light emitting material providing red light.In at least one embodiment, the first light emitting layer comprises a first light emitting material providing red light. The second light emitting layer includes a second light emitting material providing green light.In at least one embodiment, the second emission layer comprises only a third light emitting material providing blue light.In at least one embodiment, the second emission layer includes: a third light emitting layer including a third light emitting material that provides blue light; a charge generation layer disposed on the third light emitting layer; and a fourth light emitting layer disposed on the charge generation layer and including the third light emitting material that provides blue light.In at least one embodiment, the light emitting display device further includes: a hole function layer disposed between the anode electrode and the first emission layer and the second emission layer; and an electron function layer disposed between the cathode electrode and the first emission layer and the second emission layer.In at least one embodiment, the resonant layer is disposed at one of between the hole functional layer and the first emission layer and between the first emission layer and the electron functional layer.In at least one embodiment, the light transmissive layer is disposed between the resonant layer and the reflective layer.In order to achieve the above objects of the present disclosure, a light emitting display device according to another aspect of the present disclosure includes: a first pixel that provides first light, a second pixel that provides second light, and a third pixel that provides third light, the first pixel, the second pixel, and the third pixel being arranged on a substrate in a matrix; anode electrodes arranged in the first pixel, the second pixel, and the third pixel in an associated manner, the anode electrode including a light transmissive layer and a reflective layer arranged below the light transmissive layer; a first emission layer arranged on the anode electrodes in the first pixel and the second pixel; and a second emission layer arranged on the anode electrode in the third pixel; a cathode electrode on the first emission layer and the second emission layer; and a resonant layer disposed in the first pixel or the second pixel on the light transmissive layer.The light emitting display device according to the present disclosure may be a top emission type light emitting display device with a maximized luminous efficiency for each color pixel. The present disclosure may provide a light emitting display device with improved light efficiency and ultra high resolution. The light emitting display device according to the present disclosure may have the advantage of high color purity and low manufacturing cost by implementing a micro cavity having a simple structure. Moreover, the present disclosure can provide a light emitting display device having low power consumption by providing high luminous efficiency at low power consumption.It is to be understood that both the foregoing general description and the following detailed description of the present disclosure are exemplary and explanatory and are intended to explain the disclosure in greater detail as claimed.BRIEF DESCRIPTION OF THE DRAWINGSThe accompanying drawings, which are included to provide a further understanding of the disclosure and are incorporated in and constitute a part of this application, illustrate embodiments of the disclosure and together with the description serve to explain the principle of the disclosure. In the drawings: FIG. 1 is a plan view illustrating a schematic structure of a light emitting display device according to the present disclosure. FIG. 2 is a circuit diagram illustrating a structure of a pixel in a light emitting display device according to the present disclosure. FIG. 3 is an enlarged plan view illustrating a structure of the three pixels arranged in a matrix in the light emitting display device according to the present disclosure. FIG. 4 is a cross-sectional view taken along a section line I-I' in FIG. 3 for illustrating the structure of the light emitting display device according to the present disclosure. FIG. 5 is a cross-sectional view taken along a section line II-II' in FIG. 3 for illustrating a structure of consecutive pixels in a light emitting display device according to a first exemplary embodiment of the present disclosure. FIG. 6 is a cross-sectional view taken along a section line II-II' in FIG. 3 for illustrating a structure of consecutive pixels in a light emitting display device according to a second exemplary embodiment of the present disclosure. FIG. 7 is a cross-sectional view taken along a section line II-II' in FIG. 3 for illustrating a structure of consecutive pixels in a light emitting display device according to a third exemplary embodiment of the present disclosure.Throughout the drawings and the detailed description, unless otherwise described, the same drawing reference numerals should be understood to refer to the same elements, features, and structures. The sizes, lengths, and thicknesses of layers, regions, and elements, as well as their illustration, may be exaggerated for clarity, illustration, and convenience.DETAILED DESCRIPTION OF THE DISCLOSUREReference will now be made in detail to embodiments of the present disclosure, examples of which may be illustrated in the accompanying drawings. The sequence of processing steps and / or operations described is an example; however, the sequence of steps and / or operations is not limited to the sequence set forth herein and may be changed as is known in the art, except for steps and / or operations that necessarily occur in a particular order. Names of respective elements used in the following explanations may be selected only for convenience in composing the application, and thus may be different from those used in actual products.Advantages and features of the present disclosure and methods for realizing the same will be made apparent by the following exemplary embodiments described with reference to the accompanying drawings. However, the present disclosure may be embodied in various forms and should not be construed as limited to the exemplary embodiments set forth herein. Rather, these exemplary embodiments are provided so that this disclosure will be sufficiently thorough and complete, and will fully convey the scope of the present disclosure to those skilled in the art. Moreover, the present disclosure is defined only by the scope of the claims.A shape, a size, a ratio, an angle, and a number and the like disclosed in the drawings for describing embodiments of the present disclosure are merely an example, and thus the present disclosure is not limited to the illustrated details. Like reference numerals refer to like elements throughout. In the following description, when it is determined that the detailed description of the relevant known function or configuration unnecessarily obscures the aspects of the present disclosure, the detailed description is omitted.Reference will now be made in detail to the exemplary embodiments of the present disclosure, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings to refer to the same or like parts. In the application, it should be noted that, where possible, like reference numerals that have already been used to designate like elements in other drawings are used for elements. In the following description, when a function and a configuration known to those skilled in the art are irrelevant to the essential configuration of the present disclosure, their detailed descriptions will be omitted. The terms described in the application are to be understood as follows.In the case where the terms "include", "have", "include", "contain", "form", "consist of", "formed of" and the like described in the present application are used, one or more parts may also be present unless "only" is used. The terms singular form may include plural forms unless otherwise specified.When designing an element, the element is designed to have an error range even if no explicit description is present.In describing a positional relationship, for example, when the positional order is described as "on", "over", "above", "under", "next", "next", or the like, the case where there is no contact therebetween may be included unless "immediately" or "directly" is used, that is, one or more other parts may be disposed between the two parts. For example, when an element or layer is disposed "on" another element or layer, a third layer or element may be interposed therebetween.When it is mentioned that a first element is positioned "on" a second element, this does not mean that the first element is positioned substantially above the second element in the figure. The upper part and the lower part of a subject object may be changed depending on the orientation of the object. Thus, in the figure or in an actual configuration, the case where a first element is positioned "on" a second element includes both the case where the first element is positioned "under" the second element and the case where the first element is positioned "over" the second element.The terms such as "below," "lower," "above," "higher," and the like may be used herein to describe a relationship between element(s) as depicted in the drawings. It should be understood that the terms are spatially relative and are based on the orientation depicted in the drawings.For the expression that an element or layer "touches", "overlaps", or the like, another element or layer may not only touch, overlap, or the like directly the other element or layer, but also indirectly touch, overlap, or the like another element or layer, with one or more intervening elements or layers interposed or interposed between the elements or layers, unless otherwise specified.In describing a temporal relationship, for example, when the temporal order is described as "after", "subsequently", "next", and "before", a case that is not continuous may be included unless "straight", "immediately", or "directly" is used.It should be understood that although the terms "first / r / s", "second / r / s", "A", "B", "(a)" and "(b)", etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are used only to distinguish one element from another. For example, a first element could be referred to as a second element, and likewise a second element could be referred to as a first element, without departing from the scope of the present disclosure.In describing the elements of the present disclosure, terms such as the first, second, A, B, (a), and (b) may be used. These terms are only for distinguishing the elements from other elements, and the number, kind, order, or number of the elements are not limited. When an element is described as being "associated," "coupled," or "connected" to another element, that element may be directly or indirectly connected to that other element unless otherwise specified. It should be understood that other elements may be "inserted" between elements that may be connected or coupled together.It should be understood that the term "at least one" includes all combinations involving any subject matter. For example, "at least one of a first element, a second element, and a third element" may include all combinations of two or more elements selected from the first, second, and third elements, as well as each individual element of the first, second, and third elements.Features of various embodiments of the present disclosure may be coupled or combined with each other in part or in whole, and may be operated and driven in various ways as will be sufficiently understood by those skilled in the art. The embodiments of the present disclosure may be carried out independently of each other or carried out together in a mutually dependent relationship.Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the exemplary embodiments belong. It is further understood that terms, as defined in commonly used dictionaries, should be interpreted as having, for example, a meaning that is consistent with their meaning in the context of the relevant art, and should not be interpreted in an idealized or overly formal sense unless expressly so defined herein. For example, the term "part" or "unit" may be applied to, for example, a separate circuit or structure, an integrated circuit, a computing block of a circuit device, or any structure formed to perform a described function as understood by one of ordinary skill in the art.Hereinafter, an example of a display device according to the present disclosure will be described in detail with reference to the accompanying drawings. In giving reference numerals to elements of each drawing, the same components may have the same reference numerals as far as possible, even though they are illustrated in different drawings. A scale of the elements illustrated in the accompanying drawings is different from the actual scale for convenience of description, and is not limited to the scale illustrated in the drawings.Hereinafter, the present disclosure will be explained in detail with reference to the accompanying drawings. FIG. 1 is a diagram illustrating a schematic structure of a light emitting display device according to the present disclosure. In FIG. 1, an X axis may be parallel to the extension direction of the scan line, a Y axis may be parallel to the extension direction of the data line, and a Z axis may represent the thickness direction of the display.Referring to FIG. 1, a light emitting display device according to the present disclosure includes, but is not limited to, a substrate 110, a gate (or sensing) driver 200, a pad portion 300, a source driving IC (integrated circuit) 410, a flexible wiring sheet 430, a circuit board 450, and a timing controller 500. More or fewer elements may be included.The substrate 110 may include an electrical insulating material or a flexible material. The substrate 110 may be made of, but is not limited to, glass, a metal, or a plastic. When the electroluminescent display is a flexible display, the substrate 110 may be made of a flexible material such as plastic. For example, the substrate 110 may include a light transmissive polyimide material.The substrate 110 may include a display area AA and a non-display area NDA. The non-display area NDA may refer to an area outside the display area AA. The non-display area NDA may also be referred to as an edge area or a bezel area. The display area AA, which is an area for reproducing the video images, may be defined as a majority of the central area of the substrate 110, but is not limited thereto. In the display area AA, a plurality of scan lines (or gate lines), a plurality of data lines, and a plurality of pixels may be formed or arranged. Each of pixels may include the scan line and the data line, respectively. Each pixel may include, but is not limited to, a green pixel, a red pixel, and a blue pixel. A set of a green pixel, a red pixel, and a blue pixel grouped together may be referred to as a single unit pixel.The non-display area NDA, which is an area that does not reproduce the video images, may be defined at the peripheral areas of the substrate 110 surrounding the entire display area AA or a part thereof. In the non-display region NDA, the gate driver 200 and the pad portion 300 may be formed or disposed.The gate driver 200 may supply the scan (or gate) signals to the scan lines according to the gate control signal received from the timing controller 500. The gate driver 200 may be formed on the substrate 110 in the non-display area NDA on any side outside the display area AA as a GIP type (gate driver in panel), without being limited thereto. GIP type means that the gate driver 200 is directly formed on the substrate 110. Alternatively, the gate driver 200 may be disposed on the substrate 110 in the display area AA.The pad portion 300 may supply the data signals to the data line according to the data control signal received from the timing controller 500. The pad portion 300 may be implemented as a driver chip and may be mounted on the flexible conductive foil 430. Further, the flexible wiring film 430 may be mounted on the substrate 110 at the non-display area anywhere outside the display area AA as a TAB type (tape automated bonding).The source driving IC 410 may receive the digital video data and the source control signal from the timing controller 500. The source driving IC 410 may convert the digital video data into analog data voltages according to the source control signal and then supply the same to the data lines. When the source driving IC 410 is made of a chip type, it may be installed on the flexible wiring sheet 430 as a COF (chip-on-film), COP (chip-on-plastic), or COG (chip-on-glass) type, without being limited thereto.The flexible wiring film 430 may include a plurality of first connection lines connecting the pad portion 300 to the source driving IC 410 and a plurality of second connection lines connecting the pad portion 300 to the circuit board 450. The flexible wiring film 430 may be mounted on the pad portion 300 using an anisotropic conductive layer such that the pad portion 300 may be connected to the first connection lines of the flexible wiring film 430.The circuit board 450 may be attached to the flexible wiring sheet 430. The circuit board 450 may include a plurality of circuits implemented as driving chips. For example, the circuit board 450 may be a printed circuit board or a flexible circuit board.The timing controller 500 may receive the digital video data and the timing signal from an external system board through the wiring cables of the circuit board 450. The timing controller 500 may generate, based on the timing signal, a gate control signal for controlling the operation timing of the gate driver 200 and a source control signal for controlling the source driving IC 410. The timing controller 500 may supply the gate control signal to the gate driver 200 and supply the source control signal to the source driving IC 410. Depending on the product types, the timing controller 500 may be formed as a chip with the source drive IC 410 and mounted on the substrate 110.FIG. 1 is a plan view illustrating a schematic structure of an electroluminescence display according to the present disclosure. FIG. 2 is a circuit diagram illustrating a structure of a pixel according to the present disclosure. FIG. 3 is an enlarged plan view illustrating a structure of the pixels sequentially arranged in a matrix in the light emitting display device according to the present disclosure. FIG. 4 is a cross-sectional view taken along a section line I-I' in FIG. 3 for illustrating the structure of the light emitting display device according to the present disclosure.Referring to FIGS. 2 to 4, a pixel P of the light emitting display may include, but is not limited to, a scan line SL, a data line DL, and a drive current line VDD. Also, a pixel P of the light emitting display may further include a driving current line VSS. A pixel P of the light emitting display may include a switching thin film transistor ST, a driving thin film transistor DT, a light emitting diode OLE, and a storage capacitance (or capacitor) Cst. A high voltage may be supplied to the driving current line VDD for driving the light emitting diode OLE.For example, the switching thin film transistor ST may be disposed at the portion where the scan line SL and the data line DL cross each other. The switching thin film transistor ST may include a gate electrode SG, a source electrode SS, and a drain electrode SD. The gate electrode SG of the switching thin film transistor ST may branch from the scan line SL or may be defined as a portion of the scan line SL as illustrated in FIG. 3. In the switching thin film transistor ST, the source electrode SS may be connected to the data line DL, and the drain electrode SD may be connected to the driving thin film transistor DT. By supplying the data signal to the driving thin film transistor DT, the switching thin film transistor ST can play a role in selecting a pixel to be driven.The driving thin film transistor DT may play a role in driving the light emitting diode OLE of the pixel selected by the switching thin film transistor ST. The driving thin film transistor DT may include a gate electrode DG, a source electrode DS, and a drain electrode DD. The gate electrode DG of the driving thin film transistor DT may be connected to the drain electrode SD of the switching thin film transistor ST. In the driving thin film transistor DT, the drain electrode DD may be connected to the driving current line VDD, and the source electrode DS may be connected to the light emitting diode OLE, for example, to an anode electrode ANO of the light emitting diode OLE. A storage capacitance Cst may be disposed between the drain electrode SD of the switching thin film transistor ST and the anode electrode ANO of the light emitting diode OLE. That is, the storage capacitance Cst may be disposed between the drain electrode SD of the switching thin film transistor ST and the source electrode DS of the driving thin film transistor DT.The driving thin film transistor DT may be disposed between the driving current line VDD and the light emitting diode OLE. The driving thin film transistor DT may be used for driving the light emitting diode OLE. Specifically, the driving thin film transistor DT may control the amount of electric currents flowing from the driving current line VDD to the light emitting diode OLE according to the voltage level of the gate electrode DG of the driving thin film transistor DT connected to the switching drain electrode SD of the switching thin film transistor ST.FIG. 4 illustrates the thin film transistors ST and DT having the top gate structure, without being limited thereto. The top gate structure means that the gate electrodes SG and DG are disposed on the semiconductor layers SA and DA. More specifically, in the top gate structure, the semiconductor layers SA and DA may be formed first on the substrate 110, and the gate electrodes SG and DG may be formed on the gate insulating layer Gl covering the semiconductor layers SA and DA. As another example, the light emitting display according to the present disclosure may have a bottom gate structure. As another example, the light emitting display according to the present disclosure may have a dual gate structure. In the bottom gate structure, the gate electrodes may be formed on the substrate first, and the semiconductor layers may be formed on the gate insulating layer covering the gate electrodes. It is preferable that the light emitting display device according to the present disclosure may include a thin film transistor having a top gate structure in implementing an ultra high resolution density to increase the aperture ratio, which is the ratio of the emission area to the pixel area.In addition, according to the top gate structure illustrated in FIG. 4, the source electrode SS and the drain electrode SD of the source thin film transistor ST, and the source electrode DS and the drain electrode DD of the drain thin film transistor DT are formed on the same layer as the gate electrodes SG and DG. In other words, the source electrodes SS and DS and the drain electrodes SD and DD may be formed on the same layer as the layer on which the scan line SL and the gate electrodes SG and DG are formed, but the data line DL and the drive current line VDD may be formed on a layer other than the scan line SL. The interlayer insulating layer ILD may be stacked on the gate electrodes SG and DG, the source electrodes SS and DS, and the drain electrodes SD and DD. The data line DL and the drive current line VDD may be disposed on the interlayer insulating layer ILD.The light emitting diode OLE may include an anode electrode ANO, an emission layer EL, and a cathode electrode CAT. The emission layer EL may include an organic material layer. For example, the emission layer EL may include one or more of a hole injection layer (HIL), a hole transfer layer (HTL), an electron transfer layer (ETL), and an electron injection layer (EIL), but the present disclosure is not limited thereto. The light emitting diode OLE may emit light according to the amount of electric current controlled by the driving thin film transistor DT. In other words, the light emitting diode OLE can be driven by the voltage differences between the low level voltage and the high level voltage controlled by the driving thin film transistor DT, whereby the brightness of the light emitting display device can be controlled. The anode electrode ANO of the light emitting diode OLE may be connected to the source electrode DS of the driving thin film transistor DT, and the cathode electrode CAT may be connected to the low level power line VSS supplying the low level electric voltage. The light emitting diode OLE may be driven by the voltage difference between the high level electric voltage controlled by the driving thin film transistor DT and the low level electric voltage.The passivation layer PAS may be deposited on the substrate 110 including the thin film transistors ST and DT. It is preferable that the passivation layer PAS is made of an organic material such as silicon oxide (SiOx) or silicon nitride (SiNx). The planarization layer PL may be deposited on the passivation layer PAS. The planarization layer PL may be a film for smoothing the uneven surface of the substrate 110 on which the thin film transistors ST and DT are formed. In order to compensate for the height difference, the planarization layer PL may be formed of an organic material. The passivation layer PAS and the planarization layer PL may include a pixel contact hole PH exposing a part of the source electrode DS of the driving thin film transistor DT. Depending on the circumstances, the passivation layer PAS may be omitted when the planarization layer PL has a function of protecting the thin film transistors ST and DT.The anode electrode ANO may be formed on the planarization layer PL covering the thin film transistors ST and DT. Specifically, the anode electrode ANO may be formed to cover a portion of the planarization layer PL. The anode electrode ANO may be connected to the source electrode DS of the driving thin film transistor DT through the pixel contact hole PH passing through the passivation layer PAS and the planarization layer PL. The anode electrode ANO may have different structures according to the emission structure of the light emitting diode OLE. For a bottom emission type example in which light generated from the emission layer is emitted in the direction in which the substrate 110 is disposed, the anode electrode ANO may include a light transmissive conductive material. For another example of the top emission type in which light generated from the emission layer is emitted in the opposite direction to the substrate 110, the anode electrode ANO may be made of a metal material having excellent light reflection. For example, the anode electrode may include, but is not limited to, one of silver (Ag), aluminum (Al), molybdenum (Mo), gold (Au), magnesium (Mg), calcium (Ca), and barium (Ba), or an alloy thereof. Otherwise, the top emission type anode electrode ANO may include a metal layer having excellent reflectivity and a layer of light transmissive conductive material on the metal layer, without being limited thereto.In the present disclosure, it is preferable to use the top emission type that may be suitable for realizing ultra high resolution. Therefore, it is preferable that the anode electrode ANO may be a layer that reflects most of the light provided from the emission layer EL toward the cathode electrode CAT. For example, the anode electrode ANO may have a structure in which a light transmissive layer TRL and a reflective layer REF may be stacked. The light transmissive layer TRL may preferably be made of a light transmissive conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO). The reflective layer REF may preferably be made of a metal material having excellent reflectivity. For example, the reflective layer REF may be made of a material selected from silver (Ag), aluminum (Al), molybdenum (Mo), gold (Au), magnesium (Mg), calcium (Ca), and barium (Ba), or an alloy of two or more thereof, without being limited thereto.In the top emission type, it is preferable that the anode electrode ANO has a maximum area in a pixel region defined by the data line DL, the drive current line VDD, and the scan line SL. In this case, the thin film transistors ST and DT may be disposed so as to overlap the anode electrode ANO below the anode electrode ANO. In addition, the data line DL, the driving current line VDD, and the scan line SL may also partially overlap the anode electrode ANO.A bank BA is formed on the anode electrode ANO. The bank BA may cover the peripheral areas of the anode electrode ANO and expose a majority of central portions of the anode electrode ANO. The area of the anode electrode ANO exposed by the bank BA may be defined as an emission area of the pixel. The bank BA may include an insulating material. For example, the bank BA may include an organic insulating material such as acrylic resin, epoxy resin, phenol resin, polyamide resin, and / or polyimide resin, etc. Alternatively, the bank BA may include an inorganic insulating material such as silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, or titanium oxide, etc. Also, the bank BA may include a black dye to absorb light incident from the outside.An emission layer EL is deposited on the anode electrode ANO and the bank BA. The emission layer EL may be deposited so as to be in face contact with the anode electrode ANO and the bank BA. The emission layer EL may be deposited on the entire display region AA so as to cover the anode electrode ANO and the bank BA. For an embodiment, the emission layer EL may include two or more emission layers vertically stacked to combine different colors of light for emitting white light. For example, the emission layer EL may include a first emission layer and a second emission layer to combine a first color light and a second color light to emit white light, without being limited thereto.For another embodiment, the emission layer EL may include one of a blue emission layer, green emission layer, and red emission layer to provide colored light associated with the pixel, without being limited thereto. Also, the emission layer EL may include one of a cyan emission layer, a magenta emission layer, and a yellow emission layer, or the like. In this case, the emission layer EL may be insulatedly disposed within each emission region defined by the bank BA. In addition, the light emitting diode OLE may include function layers for improving the emission efficiency and / or the lighting time of the emission layer EL.A cathode electrode CAT is deposited on the emission layer EL. The cathode electrode CAT may be deposited so as to be in face contact with the emission layer EL. The cathode electrode CAT may be deposited so as to cover the entire surface of the substrate 110 so as to be connected to all pixels. For setting up the micro cavity structure, the cathode electrode CAT may be a thin film made of a semi-light transmissive material, without being limited thereto. The semi-transmissive thin layer can transmit a part of the incident light and reflect the remainder. For example, the cathode electrode CAT may be an ultra-thin metal layer made of a metal material such as aluminum (Al), silver (Ag), gold (Au), or magnesium (Mg) having a thickness of 10 nm to 30 nm, without being limited thereto. When the metal material is formed in a thickness of 10 nm to 30 nm, 70% to 30% of the incident light can be transmitted. In the light emitting display device according to the present disclosure, the cathode electrode CAT for enhancing the micro-cavity effect may preferably have a thickness for transmitting 30% of the light and reflecting 70% of the light.The distance between the reflective layer REF and the cathode electrode CAT, more specifically, the distance between the upper surface of the reflective layer REF and the lower surface of the cathode electrode CAT may be an integer multiple of half the wavelength of the light generated from the emission layer EL. The resonance distance may be referred to as a distance corresponding to an integer multiple of half the wavelength of the specific color light generated from the emission layer EL of a specific pixel. By adjusting the thickness of the emission layer EL and / or the thickness of the light transmissive layer TRL of the anode electrode ANO, the distance between the reflective layer REF and the cathode electrode CAT can be adjusted to correspond to the resonance distance.The micro cavity structure is a structure for maximizing the emission efficiency of light having a specific color emitted from the emission layer EL. For example, the emission layer EL may include one of a blue emission layer, green emission layer, and red emission layer, without being limited thereto. Therefore, various embodiments for implementing a micro cavity in a structure in which three pixels emitting blue color light, green color light, and red color light, respectively, are sequentially described below.< Exemplary Embodiment>Hereinafter, with reference to FIG. 5, a first exemplary embodiment of the present disclosure will be described. FIG. 5 is a cross-sectional view taken along a section line II-II' in FIG. 3 for illustrating a structure of consecutive pixels in a light emitting display device according to a first exemplary embodiment of the present disclosure.The light emitting display device according to the first exemplary embodiment may include a first pixel that emits first light, a second pixel that emits second light, and a third pixel that emits third light, which are arranged in a matrix one after another. For example, the light emitting display device according to the first exemplary embodiment may include, but is not limited to, a green pixel PG that emits green light, a red pixel PR that emits red light, and a blue pixel PB that emits blue light, which are arranged in a matrix in series. The pixels of other colors are also possible, which are not shown in FIG. 5. Herein, the green light may be referred to as a first light, the red light may be referred to as a second light, and the blue light may be referred to as a third light. Further, the green pixel PG may be referred to as a first pixel, the red pixel PR may be referred to as a second pixel, and the blue pixel PB may be referred to as a third pixel. Alternatively, the light emitting display device according to the first exemplary embodiment may include, but is not limited to, a red pixel PR that emits red light, a green pixel PG that emits green light, and a blue pixel PB that emits blue light, which are arranged in a matrix in series. Herein, the red light may be referred to as a first light, the green light may be referred to as a second light, and the blue light may be referred to as a third light. Further, the red pixel PR may be referred to as a first pixel, the green pixel PG may be referred to as a second pixel, and the blue pixel PB may be referred to as a third pixel. The light emitting display device according to the first exemplary embodiment may include a buffer layer BUF, a gate insulating layer Gl, a passivation layer PAS, and a planarization layer PL sequentially deposited on a substrate 110. In FIG. 5, the elements of the thin film transistor disposed under the planarization layer PL may not be illustrated for convenience.A plurality of anode electrodes ANO 1, ANO 2, and ANO 3 are formed on the planarization layer PL. The anode electrodes are associated one-to-one with the green pixel PG, the red pixel PR, and the blue pixel PB, which are arranged one after another. For example, a first anode electrode ANO 1 may be disposed in the green pixel PG, a second anode electrode ANO 2 may be disposed in the red pixel PR, and a third anode electrode ANO 3 may be disposed in the blue pixel PB.The light emitting display device according to the first exemplary embodiment may include the micro-cavity structure. In the first exemplary embodiment, the micro-cavity structure may include features in which a distance between each of the anode electrodes ANO 1, ANO 2, and ANO 3 disposed in a green pixel PG, a red pixel PR, and a blue pixel PB and the cathode electrode CAT is set to be an integer multiple of half the wavelength of the color light emitted from each of the green pixel PG, the red pixel PR, and the blue pixel PB.The first anode electrode ANO 1 disposed in the green pixel PG may have a multilayer structure in which a reflective layer REF and a transmissive layer TRL are sequentially stacked on the planarization layer PL. The second anode electrode ANO 2 disposed in the red pixel PR may have a multilayer structure in which a reflective layer REF, a transmissive layer TRL, and a resonant layer CAL are sequentially stacked on the planarization layer PL. The third anode electrode ANO 3 in the blue pixel PB may have a multilayer structure in which a reflective layer REF and a transmissive layer TRL are sequentially stacked on the planarization layer PL. Here, the reflective layer REF and the transmissive layer TRL disposed in each pixel may each have the same thickness.The reflective layer REF may be made of a material selected from silver (Ag), aluminum (Al), molybdenum (Mo), gold (Au), magnesium (Mg), calcium (Ca), or barium (Ba), or two or more alloys thereof, but is not limited thereto. The reflective layer REF may preferably be formed to have a thickness of 500 Å to 2000 Å (50 nm to 200 nm) so that all the light provided from the emission layer EL stacked thereon may be reflected upward, that is, in the direction of the cathode electrode CAT. The light transmissive layer TRL may be made of a light transmissive conductive material such as, but not limited to, indium tin oxide (ITO) or indium zinc oxide (IZO). The light transmissive layer TRL may have a thickness in a range of 500 Å to 1000 Å (50 nm to 100 nm), but is not limited thereto.The resonant layer CAL included in the second anode electrode ANO 2 may be made of a same light transmissive conductive material as that of the light transmissive layer TRL. It is preferable that the resonance layer CAL has a thickness that ensures the resonance interval of the red light provided from the red pixel PR where the second anode electrode ANO 2 is disposed. Details of this are explained in the later description of the microcavity structure.An emission layer may be deposited on the anode electrodes ANO 1, ANO 2, and ANO 3. In the first exemplary embodiment, a first emission layer E 1 may be commonly disposed in the green pixel PG and the red pixel PR. Further, in the blue pixel PB, a second emission layer E 2 may be disposed separately from the first emission layer E 1. Specifically, the first emission layer E 1 may be collectively disposed on the anode electrodes ANO 1, ANO 2 in the green pixel PG and the red pixel PR, and the second emission layer E 2 may be disposed on the anode electrode ANO 3 in the blue pixel PB, without being limited thereto.The first emission layer E 1 may include a red light emitting layer, a charge generation layer, and a green light emitting layer sequentially stacked on the first anode electrode ANO 1 and the second anode electrode ANO 2. For example, a red light emitting layer, a charge generation layer, and a green light emitting layer may be sequentially stacked on the first anode electrode ANO 1 and the second anode electrode ANO 2. For another example, a green light emitting layer, a charge generation layer, and a red light emitting layer are sequentially stacked on the first anode electrode ANO 1 and the second anode electrode ANO 2 such that the first emission layer E 1 is formed. That is, the first emitting layer E 1 may include a first emitting layer EM 1, a charge generating layer CGL, and a second emitting layer EM 2 stacked one after another. The second emission layer E 2, on the other hand, may include only a blue light emitting layer. For example, the second emission layer E 2 may include a single layer of a blue light emitting layer. For another example, the second emission layer E 2 may include a double-stacked layer of third blue light emitting emission layers. In the case of a double-stacked layer, the second emission layer E 2 may include a first blue light emitting layer, a charge generation layer, and a second blue light emitting layer sequentially stacked on the third anode electrode ANO 3.A cathode electrode CAT may be deposited on the first emission layer E 1 and the second emission layer E 2 continuously across the green pixel PG, the red pixel PR, and the blue pixel PB. In the light emitting display device according to the first exemplary embodiment, the cathode electrode CAT may be made of a semi-transmissive conductive material. For example, the cathode electrode CA may be an ultra-thin metal layer that may be made of a metal material including, but not limited to, aluminum (Al), silver (Ag), gold (Au), and magnesium (Mg) having a thickness in the range of 10 nm to 30 nm.In addition, a hole function layer HFL may be disposed below the first emission layer E 1 and the second emission layer E 2. An electron functional layer EFL may be deposited on the first emission layer E 1 and the second emission layer E 2. The hole functional layer HFL and the electron functional layer EFL may be collectively deposited across the green pixel PG, the red pixel PR, and the blue pixel PB. For example, the hole function layer HFL may be deposited on the first anode electrode ANO 1, the second anode electrode ANO 2, the third anode electrode ANO 3, and the bank BA. Moreover, the electron functional layer EFL may be deposited over the entire surface of the substrate 110 on the first emission layer E 1 and the second emission layer E 2. In addition, the hole function layer HFL may be disposed over the entire surface of the substrate 110 under the first emission layer E 1 and the second emission layer E 2.The light emitting display device according to the first exemplary embodiment may have a micro-cavity structure in which a micro-cavity phenomenon may occur between the reflective layer REF and the cathode electrode CAT. That is, the distance between the reflective layer REF and the cathode electrode CAT may be set to be an integer multiple of half the wavelength of the color light provided by each pixel. Hereinafter, specific examples of setting the distance between the reflective layer REF and the cathode electrode CAT in each pixel to be the resonance distance will be explained.In the green pixel PG, the distance between the reflective layer REF and the cathode electrode CAT may be a green resonance distance MG. For example, the green resonance distance MG may be a thickness corresponding to an integer multiple of 275 nm, which is 1 / 2 of 550 nm, of the representative wavelength of green light. For example, the green resonance distance MG may be one of 275 nm, 550 nm, 825 nm, 1100 nm, and 1375 nm, without being limited thereto.In the red pixel PR, the distance between the reflective layer REF and the cathode electrode CAT may be a red resonance distance MR. For example, the red resonance distance MR may be a thickness corresponding to an integer multiple of 315 nm, which is 1 / 2 of 630 nm, of the representative wavelength of red light. For example, the red resonance distance MR may be one of 315 nm, 630 nm, 945 nm, 1260 nm, and 1575 nm, without being limited thereto.In the green pixel PG and the red pixel PR, the first emission layer E 1 may be deposited together. Therefore, the thickness of the first emission layer E 1 may be set to have a thickness corresponding to the green resonance distance MG of the green pixel PG. For example, the thickness of the sum of the light transmissive layer TRL, the hole functional layer HFL, the first emission layer E 1, and the electron functional layer EFL between the reflective layer REF and the cathode electrode CAT may be set to a thickness of 550 nm, without being limited thereto. The hole functional layer HFL and the electron functional layer EFL may be deposited over the green pixel PG, the red pixel PR, and the blue pixel PB, so that they may have a uniform thickness over the entire substrate 110. Therefore, in order to adjust the green resonance distance MG, it is preferable to adjust the thickness of the first emission layer E 1. Here, the first emission layer E 1 is not the layer having the green resonance distance MG but the layer for setting the green resonance distance MG. Therefore, the first emission layer E 1 can be described as having a "corresponding thickness" to the green resonance distance MG. Since the first emission layer E 1 includes the green light emitting layer and the red light emitting layer, the green light and the red light can be generated simultaneously. However, since the green pixel PG has the green resonance distance MG, only green light can be emitted by the cathode electrode CAT.The first emission layer E 1 disposed in the red pixel PR may extend to the green pixel PG. The red pixel PR may include the first emission layer E 1 having the same structure as the green pixel PG. Therefore, the total thickness of the light transmissive layer TRL, the hole functional layer HFL, the first emission layer E 1, and the electron functional layer EFL in the red pixel PR may be 550 nm. Under this thickness condition, the red pixel PR may also emit green light due to the micro-cavity effect. However, in the red pixel PR, the resonance layer CAL is further disposed on the light transmissive layer TRL, without being limited thereto. By adjusting the thickness of the resonance layer CAL, the distance between the reflective layer REF and the cathode electrode CAT in the red pixel PR may be set to the red resonance distance MR. For example, since the total thickness of the light transmissive layer TRL, the hole functional layer HFL, the first emission layer E 1, and the electron functional layer EFL is 550 nm, by adjusting the thickness of the resonance layer CAL to 80 nm, the distance between the reflective layer REF and the cathode electrode CAT may be set to 630 nm. Alternatively, by thickening the light transmissive layer TRL in the red pixel PR, the resonance distance required for the red pixel PR may be adjusted or detected.Here, the first emission layer E 1 and the resonance layer CAL may not be the layer corresponding to the red resonance distance MR, but may be the layer for adjusting the red resonance distance MR. Therefore, the first emission layer E 1 and the resonance layer CAL may be described as having a "corresponding thickness" to the red resonance distance MR. Specifically, by adjusting the thickness of the resonance layer CAL, the distance between the reflective layer REF and the cathode electrode CAT may be set to correspond to the red resonance distance MR. Since the first emission layer E 1 may include a green light emitting layer and a red light emitting layer, the first emission layer E 1 may simultaneously emit green light and red light. However, since the red pixel PR has the red resonance distance MR, only red light can be provided through the cathode electrode CAT at the red pixel PR.The distance between the reflective layer REF and the cathode electrode CAT in the blue pixel PB may correspond to a blue resonance distance MB. The blue resonance distance MB may have a thickness corresponding to an integer multiple of 230 nm, which is 1 / 2 of 460 nm, of the representative wavelength of blue light. For example, the blue resonance distance MB may be one selected from 230 nm, 460 nm, 690 nm, 920 nm, or 1150 nm. For example, the total thickness of the light transmissive layer TRL, the hole function layer HFL, the second emission layer E 2, and the electron function layer EFL may be formed between the reflective layer REF and the cathode electrode CAT to have a thickness of 460 nm. Since the second emission layer E 2 disposed in the blue pixel PB may be deposited separately from the first emission layer E 1 disposed in the green pixel PG and the red pixel PR, it may have a different thickness than the first emission layer E 1. Since the hole functional layer HFL and the electron functional layer EFL may be deposited to extend from the green pixel PG to the red pixel PR, they may have a uniform thickness over the entire substrate 110. Therefore, it is preferable to adjust the thickness of the second emission layer E 2 to match the blue resonance distance MB. Since the second emission layer E 2 may be not the layer having the blue resonance distance MB but the layer for matching with the blue resonance distance MB, the second emission layer E 2 may be described as having a "corresponding thickness" to the blue resonance distance MB. Since the blue pixel PB may include only the second emission layer E 2 for generating blue color light, only blue light may be emitted through the cathode electrode CAT. In particular, by maintaining the blue resonance distance MB, the luminous efficiency of blue light can be maximized.As in the above description, the light emitting display device according to the first exemplary embodiment may selectively provide light of the color assigned to each pixel, so that the color filter may be excluded from the display device. Therefore, there is no loss of brightness of light due to the color filter, and higher brightness can be provided. It is not limited thereto, the color filter may be disposed on top of the cathode electrode CAT to increase the purity of the color light provided by each pixel.In the first exemplary embodiment, in order to adjust the resonance distance, the resonance layer CAL having the light transmission property is added in the second pixel on the light transmission layer TRL. However, this is not limited to this, by thickening the light transmissive layer TRL in the second pixel, the resonance distance required for the second pixel may be adjusted or detected.< Exemplary Embodiment>Hereinafter, with reference to FIG. 6, a second exemplary embodiment of the present disclosure will be described. FIG. 6 is a cross-sectional view taken along a section line II-II' in FIG. 3 for illustrating a structure of consecutive pixels in a light emitting display device according to a second exemplary embodiment of the present disclosure.The light emitting display device according to the second exemplary embodiment may include a first pixel generating first light, a second pixel generating second light, and a third pixel generating third light, which are arranged in a matrix one behind the other. For example, the light emitting display device according to the second exemplary embodiment may include, but is not limited to, a green pixel PG that generates green light, a red pixel PR that generates red light, and a blue pixel PB that generates blue light, which are arranged in a matrix one after another. The pixels of other colors are also possible, which are not shown in FIG. 6. Herein, the green light may be referred to as a first light, the red light may be referred to as a second light, and the blue light may be referred to as a third light. Further, the green pixel PG may be referred to as a first pixel, the red pixel PR may be referred to as a second pixel, and the blue pixel PB may be referred to as a third pixel. The light emitting display device according to the second exemplary embodiment may include a buffer layer BUF, a gate insulating layer Gl, a passivation layer PAS, and a planarization layer PL sequentially deposited on a substrate 110. In FIG. 6, the elements of the thin film transistor disposed under the planarization layer PL may not be illustrated for convenience.The structure of the light emitting display device according to the second exemplary embodiment may be very similar to the light emitting display device according to the first embodiment. The difference is mainly that: in the first exemplary embodiment, the thickness of the first emission layer E 1 may correspond to the green resonance distance MG, and a resonance layer CAL may be disposed in the red pixel PR. In the second exemplary embodiment, the thickness of the first emission layer E 1 may correspond to the red resonance distance MR, and a resonance layer CAL may be disposed in the green pixel PG.A plurality of anode electrodes ANO 1, ANO 2, and ANO 3 are formed on the planarization layer PL. The anode electrodes are associated one-to-one with the green pixel PG, the red pixel PR, and the blue pixel PB, which are arranged one after another. For example, a first anode electrode ANO 1 may be disposed in the green pixel PG, a second anode electrode ANO 2 may be disposed in the red pixel PR, and a third anode electrode ANO 3 may be disposed in the blue pixel PB.The first anode electrode ANO 1 disposed in the green pixel PG may have a multilayer structure in which a reflective layer REF, a transmissive layer TRL, and a resonant layer CAL may be sequentially deposited on the planarization layer PL. The first anode electrode ANO 1 disposed in the green pixel PG may have a multilayer structure in which a reflective layer REF, a transmissive layer TRL, and a resonant layer CAL are sequentially stacked on the planarization layer PL. The second anode electrode ANO 2 disposed in the red pixel PR may have a multilayer structure in which a reflective layer REF and a transmissive layer TRL are sequentially stacked on the planarization layer PL. The third anode electrode ANO 3 disposed in the blue pixel PB may have a multilayer structure in which a reflective layer REF and a transmissive layer TRL are sequentially stacked on the planarization layer PL. Here, the reflective layer REF and the transmissive layer TRL disposed in each pixel may each have the same thickness.An emission layer may be deposited on the anode electrodes ANO 1, ANO 2, and ANO 3. In the second exemplary embodiment, as in the first exemplary embodiment, a first emission layer E 1 may be commonly disposed in the green pixel PG and the red pixel PR. In the blue pixel PB, a second emission layer E 2 may be deposited to be separated from the first emission layer E 1. Specifically, the first emission layer E 1 may be collectively disposed on the anode electrodes ANO 1, ANO 2 in the green pixel PG and the red pixel PR, and the second emission layer E 2 may be disposed on the anode electrode ANO 3 in the blue pixel PB, without being limited thereto.The first emission layer E 1 may include a red light emitting layer, a charge generation layer, and a green light emitting layer sequentially stacked on the first anode electrode ANO 1 and the second anode electrode ANO 2. For example, a red light emitting layer, a charge generation layer, and a green light emitting layer may be sequentially stacked on the first anode electrode ANO 1 and the second anode electrode ANO 2. For another example, the first emission layer E 1 may include a green light emitting layer, a charge generation layer, and a red light emitting layer stacked one after another. One of the green light emitting layer and the red light emitting layer may be referred to as a first light emitting layer EM 1, and the other may be referred to as a second light emitting layer EM 2. For example, the first emission layer E 1 may include a first light emitting layer EM 1, a charge generation layer CGL, and a second light emitting layer EM 2 sequentially stacked on the first anode electrode ANO 1 and the second anode electrode ANO 2. The second emission layer E 2 may include only a blue light emitting layer. For example, the second emission layer E 2 may include only a third light emitting layer that provides the blue light. For another example, the second emission layer E 2 for providing blue light may include a multi-layer third light emitting layer.A cathode electrode CAT may be collectively deposited on the first emission layer E 1 and the second emission layer E 2 across the green pixel PG, the red pixel PR, and the blue pixel PB. In the light emitting display device according to the second exemplary embodiment, the cathode electrode CAT may include a semi-transmissive conductive material. For example, the cathode electrode CA may be an ultra-thin metal layer that may be made of a metal material including aluminum (Al), silver (Ag), gold (Au), or magnesium (Mg) with a thickness in the range of 10 nm to 30 nm, without being limited thereto.In addition, a hole function layer HFL may be disposed below the first emission layer E 1 and the second emission layer E 2. Further, an electron functional layer EFL may be disposed over the first emission layer E 1 and the second emission layer E 2. The hole functional layer HFL and the electron functional layer EFL may be collectively deposited across the green pixel PG, the red pixel PR, and the blue pixel PB. Moreover, the electron functional layer EFL may be deposited over the entire surface of the substrate 110 on the first emission layer E 1 and the second emission layer E 2. In addition, the hole function layer HFL may be disposed over the entire surface of the substrate 110 under the first emission layer E 1 and the second emission layer E 2.The light emitting display device according to the second exemplary embodiment may have a micro-cavity structure in which the resonance phenomenon may occur between the reflective layer REF and the cathode electrode CAT. That is, the distance between the reflective layer REF and the cathode electrode CAT may be set to be an integer multiple of half the wavelength of the color light provided at each pixel.In the green pixel PG and the red pixel PR, the first emission layer E 1 may be deposited together. Therefore, the thickness of the first emission layer E 1 can be controlled to have a thickness corresponding to the red resonance distance MR of the red pixel PR. For example, the total thickness of the light transmissive layer TRL, the hole functional layer HFL, the first emission layer E 1, and the electron functional layer EFL interposed between the reflective layer REF and the cathode electrode CAT may be set to have a thickness of 630 nm, without being limited thereto. The first emission layer E 1 includes the green light emitting layer and the red light emitting layer, so that green light and red light can be provided simultaneously. However, since the red pixel PR has the red resonance distance MR, only red light can be provided by the cathode electrode CAT.The first emission layer E 1 disposed in the red pixel PR may extend to the green pixel PG. The first emission layer E 1 may have the same structure from the red pixel PR to the green pixel PG. Therefore, the total thickness of the light transmissive layer TRL, the hole functional layer HFL, the first emission layer E 1, and the electron functional layer EFL in the green pixel PG may be 630 nm. At this thickness, the red light can be emitted from the green pixel PG by the resonance effect of the micro cavity. However, in the green pixel PG, a resonance layer CAL may be further disposed on the light transmissive layer TRL, without being limited thereto. By adjusting the resonance layer CAL, the distance between the reflective layer REF and the cathode electrode CAT in the green pixel PG may be set to the green resonance distance MG. For example, the distance between the reflective layer REF and the cathode electrode CAT may be set to be 825 nm as the total thickness of the light transmissive layer TRL, the hole functional layer HFL, the first emission layer E 1, and the electron functional layer EFL by depositing the resonance layer CAL to a thickness of 195 nm. Alternatively, by thickening the light transmissive layer TRL in the green pixel PG, the resonance distance required for the green pixel PG may be adjusted or detected. The first emitting layer E 1 may provide green light and red light because it includes the green light emitting layer and the red light emitting layer stacked one after another. However, since the green pixel PG has the green resonance distance MG, only green light can be provided at the green pixel PG through the cathode electrode CAT.In the blue pixel PB, the distance between the reflective layer REF and the cathode electrode may have a blue resonance distance MB. The blue resonance distance MB may have a thickness corresponding to an integer multiple of 230 nm, which is half 460 nm, the representative wavelength of blue light. For example, the blue resonance distance MB may be one of 230 nm, 460 nm, 690 nm, 920 nm, and 1150 nm. For example, the total thickness of the light transmissive layer TRL, the hole function layer HFL, the second emission layer E 2, and the electron function layer EFL disposed between the reflective layer REF and the cathode electrode CAT may be set to be 460 nm. Since the second emission layer E 2 disposed in the blue pixel PB may be deposited separately from the first emission layer E 1 disposed in the green pixel PG and the red pixel PR, it may have a different thickness than the first emission layer E 1. The hole functional layer HFL and the electron functional layer EFL may be deposited to extend from the green pixel PG to the red pixel PR, and may have a uniform thickness throughout the substrate 110. Therefore, it is preferable to adjust the thickness of the second emission layer E 2 to set the blue resonance distance MB. Since the blue pixel PB includes only the second emission layer E 2 that provides the blue light, only blue light can be emitted through the cathode electrode CAT. In particular, by securing the blue resonance distance MB, the luminous efficiency of the blue light can be maximized.The light emitting display device according to the second exemplary embodiment may selectively provide light of the color assigned to each pixel, so that the color filters may not be required. Therefore, there is no brightness decrease due to the color filters, so that higher brightness can be obtained. However, this is not limited to this, when the purity of the color light provided by each pixel is increased, additional color filters may be disposed on the cathode electrode CAT in each pixel.In the first and second exemplary embodiments, the resonant layer CAL is explained as a layer included in the anode electrode ANO. However, it is not limited thereto. When the hole function layer HFL, the first emission layer E 1, and the electron function layer EFL are deposited, the resonance layer CAL may be formed of an organic material. For example, to form the resonance layer CAL, an additional light transmissive organic material may be further deposited under the hole function layer HFL or on the electron function layer EFL.In the first exemplary embodiment, in order to adjust the resonance distance, in the first pixel, the resonance layer CAL having the light transmission property is added on the light transmission layer TRL. However, this is not limited to this, by thickening the light transmissive layer TRL in the first pixel, the resonance distance required for the first pixel may be adjusted or detected.< Exemplary Embodiment>Hereinafter, with reference to FIG. 7, a third exemplary embodiment of the present disclosure will be described. FIG. 7 is a cross-sectional view taken along a section line II-II' in FIG. 3 for illustrating a structure of consecutive pixels in a light emitting display device according to a third exemplary embodiment of the present disclosure.In the first and second embodiments, the structure in which the resonance layer CAL is added to the anode electrode ANO will be explained. In the third exemplary embodiment, a structure in which a resonance layer CAL is added to the cathode electrode CAT will be explained.A light emitting display device according to the third exemplary embodiment may include a first pixel generating first light, a second pixel generating second light, and a third pixel generating third light, which are arranged in a matrix in series. For example, the light emitting display device according to a third exemplary embodiment may include, but is not limited to, a green pixel PG providing green light, a red pixel PR providing red light, and a blue pixel PB providing blue light, which are arranged in a matrix one behind the other. The pixels of other colors are also possible, which are not shown in FIG. 7. Herein, the green light may be referred to as a first color light, the red light may be referred to as a second color light, and the blue light may be referred to as a third color light. Further, the green pixel PG may be referred to as a first pixel, the red pixel PR may be referred to as a second pixel, and the blue pixel PB may be referred to as a third pixel. The light emitting display device according to the third exemplary embodiment may include a buffer layer BUF, a gate insulating layer Gl, a passivation layer PAS, and a planarization layer PL sequentially deposited on a substrate 110. FIG. 7 does not show the elements for thin film transistors disposed under the planarization layer PL.A plurality of anode electrodes ANO 1, ANO 2, and ANO 3 are formed on the planarization layer PL. A first anode electrode ANO 1 disposed in the green pixel PG, a second anode electrode ANO 2 disposed in the red pixel PR, and a third anode electrode ANO 3 disposed in the blue pixel PB may have a multilayer structure in which a reflective layer REF and a transmissive layer TRL are sequentially stacked on the planarization layer PL. Here, the reflective layer REF and the transmissive layer TRL disposed in each pixel may each have the same thickness.An emission layer may be deposited on the first anode electrode ANO 1, the second anode electrode ANO 2, and the third anode electrode ANO 3. In the third exemplary embodiment, a first emission layer E 1 may be collectively deposited in the green pixel PG and the red pixel PR. In the blue pixel PB, a second emission layer E 2 may be deposited separately from the first emission layer E 1. Specifically, the first emission layer E 1 may be collectively disposed on the anode electrodes ANO 1, ANO 2 in the green pixel PG and the red pixel PR, and the second emission layer E 2 may be disposed on the anode electrode ANO 3 in the blue pixel PB, without being limited thereto.The first emission layer E 1 may include a red light emitting layer, a charge generation layer, and a green light emitting layer stacked one after another. For example, a red light emitting layer, a charge generation layer, and a green light emitting layer are sequentially stacked on the first anode electrode ANO 1 and the second anode electrode ANO 2. For another example, a green light emitting layer, a charge generation layer, and a red light emitting layer for forming the first emission layer E 1 may be sequentially stacked on the first anode electrode ANO 1 and the second anode electrode ANO 2. One of the red light emitting layer and the green light emitting layer may be referred to as a first light emitting layer EM 1, and the other may be referred to as a second light emitting layer EM 2. That is, the first emission layer E 1 may have a structure in which a first light emitting layer EM 1, a charge generation layer CGL, and a second light emitting layer EM 2 are sequentially stacked.Here, the second emission layer E 2 may include only a blue light emitting layer. For example, the second emission layer E 2 may include a single layer of a third colored light emitting layer that provides blue light. For another example, the second emission layer E 2 may include multiple layers of third colored light emitting layers that provide blue light. In the multilayer structure, the second emission layer E 2 may include a first blue light emitting layer including a light emitting material that provides blue light, a charge generation layer disposed on the first blue light emitting layer, and a second blue light emitting layer disposed on the charge generation layer and including the light emitting material that provides the blue light, which are sequentially stacked on the third anode electrode ANO 3.A cathode electrode CAT may be deposited on the first emission layer E 1 and the second emission layer E 2. The cathode electrode CAT may have a structure in which a transparent cathode layer IT and a semi-transparent cathode layer HT are sequentially stacked. Further, for adjusting a resonance distance for a micro cavity structure, the cathode electrode CAT may have a structure in which a transparent cathode layer IT, a resonance layer CAL, and a semi-transparent cathode layer HT are sequentially stacked. Specifically, the cathode electrode CAT in the green pixel PG and the blue pixel PB may have a structure in which a transparent cathode layer IT and a semi-transparent cathode layer HT are sequentially stacked. Further, the cathode electrode CAT in the red pixel PR may have a structure in which a transparent cathode layer IT, a resonance layer CAL, and a semi-transparent cathode layer HT are sequentially stacked.The transparent cathode layer IT may be made of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO), without being limited thereto. The semi-transmissive cathode layer HT, which is a layer for a micro-cavity structure, may transmit a part of the light incident from the emission layer and reflect the rest of the light. For example, the semi-transmissive cathode layer HT may be an ultra-thin metal layer formed of a metal material such as aluminum (Al), silver (Ag), gold (Au), or magnesium (Mg) having a thickness of 10 nm to 30 nm. When the metal material is formed in a thickness of 10 nm to 30 nm, 70% to 30% of the incident light can be transmitted. In order to ensure the micro cavity effect, the semi-transmissive cathode layer HT in the light emitting display device according to the present disclosure may preferably have a thickness to allow 30% of the light to pass therethrough and reflect 70% of the light.Specifically, the transparent cathode layer IT may be deposited on the electron functional layer EFL as a single layer structure extending collectively across the green pixel PG, the red pixel PR, and the blue pixel PB on the entire substrate 110. A resonance layer CAL may be further formed on the transparent cathode layer IT to correspond to the red pixel PR. In this case, the resonance layer CAL is not formed on the green pixel PG and the blue pixel PB. In the green pixel PG and the blue pixel PB, the semi-transmissive cathode layer HT may be disposed on the transmissive cathode layer IT, and in the red pixel PR, the semi-transmissive cathode layer HT may be disposed on the resonance layer CAL, and the resonance layer CAL may be disposed on the transmissive cathode layer IT.In addition, a hole function layer HFL may be disposed below the first emission layer E 1 and the second emission layer E 2 and above the anode electrodes ANO 1, ANO 2, and ANO 3. Further, an electron functional layer EFL may be disposed over the first emission layer E 1 and the second emission layer E 2 and under the transparent cathode layer IT. The hole functional layer HFL and the electron functional layer EFL may be collectively deposited across the green pixel PG, the red pixel PR, and the blue pixel PB.The light emitting display device according to the third exemplary embodiment may have a micro cavity structure in which a resonance phenomenon occurs between the reflective layer REF and the semi-transmissive cathode layer HT. That is, the distance between the reflective layer REF and the semi-transmissive cathode layer HT is set to be an integer multiple of half the wavelength of the color light provided from each pixel.Between the reflective layer REF and the semi-transmissive cathode layer HT in the green pixel PG, the green resonance distance MG may be. For example, the green resonance distance MG may have a thickness corresponding to an integer multiple of 275 nm, which is 1 / 2 of 550 nm, the representative wavelength of green light. For example, the green resonance distance MG may be one of 275 nm, 550 nm, 825 nm, 1100 nm, and 1375 nm.Between the reflective layer REF and the semi-transmissive cathode layer HT in the red pixel PR, the red resonance distance MR may be. For example, the red resonance distance MR may have a thickness corresponding to an integer multiple of 315 nm, which corresponds to 1 / 2 of 630 nm, the representative wavelength of red light. For example, the red resonance distance MR may be one of 315 nm, 630 nm, 945 nm, 1260 nm, and 1575 nm.The first emission layer E 1 may be collectively deposited in the green pixel PG and the red pixel PR. Therefore, the thickness of the first emission layer E 1 may be adjusted to correspond to the green resonance distance MG of the green pixel PG. For example, the total thickness of the light transmissive layer TRL, the hole functional layer HFL, the first emission layer E 1, and the electron functional layer disposed between the reflective layer REF and the cathode electrode CAT may be set to a thickness of 550 nm, without being limited thereto. Here, the hole functional layer HFL and the electron functional layer EFL may be deposited to extend across the green pixel PG, the red pixel PR, and the blue pixel PB, so that they may have a uniform thickness over the entire substrate 110. Therefore, it is preferable to adjust the thickness of the first emission layer E 1 such that the resonance distance is fixed. Here, the first emission layer E 1 is not the layer having the green resonance distance MG but the green resonance distance adjusting layer MG. Therefore, the first emission layer E 1 may have a thickness corresponding to the green resonance distance MG. The first emission layer E 1 may simultaneously provide green light and red light because the first emission layer E 1 includes the green light emitting layer and the red light emitting layer. However, since the green pixel PG has the green resonance distance MG, the green pixel PG can provide only the green light through the cathode electrode CAT.The first emission layer E 1 disposed in the red pixel PR may extend to the green pixel PG. The first emission layer E 1 disposed in the red pixel PR may have the same structure as the first emission layer E 1 disposed in the green pixel PG. Therefore, the total thickness of the light transmissive layer TRL, the hole functional layer HFL, the first emission layer E 1, and the electron functional layer EFL disposed between the reflective layer REF and the cathode electrode CAT in the red pixel PR may have a thickness of 550 nm. Under this condition, the red pixel PR can provide green light due to the resonance effect of the micro cavity. However, in the red pixel PR, a resonance layer CAL may be further disposed between the light transmissive cathode layer IT and the light transmissive cathode layer HT, without being limited thereto. By adjusting the thickness of the resonance layer CAL, the distance between the reflective layer REF and the semi-transmissive cathode layer HT in the red pixel PR may be set to correspond to the red resonance distance MR. For example, when the total thickness of the light transmissive layer TRL, the hole functional layer HFL, the first emission layer E 1, and the electron functional layer EFL is 550 nm, by setting the resonance layer CAL to a thickness of 80 nm, the distance between the reflective layer REF and the cathode semi-transmissive layer HT may be set to 630 nm. The first emission layer E 1 may simultaneously provide green light and red light because the first emission layer E 1 includes the green light emitting layer and the red light emitting layer. However, in the red pixel PR, since the red pixel PR has the red resonance distance MR, the red pixel PR can provide only the red light through the cathode electrode CAT.The distance between the reflective layer REF and the semi-transmissive cathode layer HT in the blue pixel PB may be the blue resonance distance MB. For example, the blue resonance distance MB may have a thickness corresponding to an integer multiple of 230 nm, which is 1 / 2 of 460 nm, the representative wavelength of blue light. For example, the blue resonance distance MB may be one of 230 nm, 460 nm, 690 nm, 920 nm, and 1150 nm. For example, the total thickness of the light transmissive layer TRL, the hole functional layer HFL, the second emission layer E 2, and the electron functional layer EFL between the reflective layer REF and the semi-transmissive cathode layer HT may be set to 460 nm. Since the second emission layer E 2 disposed in the blue pixel PB may be deposited separately from the first emission layer E 1 disposed in the green pixel PG and the red pixel PR, the second emission layer E 2 may be deposited to have a different thickness than the first emission layer E 1. Since the hole functional layer HFL and the electron functional layer EFL may be deposited to extend from the green pixel PG to the red pixel PR, they may have a uniform thickness over the entire substrate 110. Therefore, it is preferable to adjust the thickness of the second emission layer E 2 to set the blue resonance distance MB. Here, the second emission layer E 2 is not the layer having the blue resonance distance MB but the layer for adjusting the blue resonance distance MB. Therefore, the second emission layer E 2 may be referred to as a layer having a "thickness" corresponding to the blue resonance distance MB. Since the blue pixel PB may include only the second emission layer E 2 that provides the blue light, only blue light may be emitted through the cathode electrode CAT. In particular, by securing the blue resonance distance MB, the brightness of the blue light can be maximized.In the description for the third exemplary embodiment, in the second pixel, the resonance layer CAL may be disposed between the light transmissive cathode layer IT and the light transmissive cathode layer HT. That is, the cathode electrode CAT may have a structure in which a transparent cathode layer IT, a resonant layer CAL, and a semi-transparent cathode layer HT are sequentially stacked. However, this is not limited to this, in the second pixel, the resonance layer CAL may be disposed under the transparent cathode layer IT. That is, the cathode electrode CAT may have a structure in which a resonance layer CAL, a transparent cathode layer IT, and a semi-transparent cathode layer HT are sequentially stacked.In the third exemplary embodiment, the cathode electrode CAT may include the transparent cathode layer IT and the semi-transparent cathode layer HT, or the transparent cathode layer IT, the resonance layer CAL, and the semi-transparent cathode layer HT. Therefore, the cathode electrode CAT may have a thick thickness, so that it is easily possible for the cathode electrode CAT to have a lower sheet resistance. By applying the third exemplary embodiment to a large-area light emitting display device, the sheet resistance of the cathode can be maintained at a uniformly low value throughout the substrate. However, this is not limited thereto, the semi-transmissive cathode layer HT and / or the resonant layer CAL deposited on the transmissive cathode layer IT may be made of non-conductive material such that they do not have electrical conductivity.The light emitting display device according to the third exemplary embodiment may selectively provide light of the color assigned to each pixel, so that the color filters may not be required. Therefore, there is no brightness decrease due to the color filters, so that higher brightness can be obtained. However, this is not limited to this, as the purity of the color light provided by each pixel increases, additional color filters may be disposed on top of the cathode electrode CAT in each pixel.From the first exemplary embodiment to the third exemplary embodiment, the resonant layer CAL may be an element included in the anode electrode ANO or the cathode electrode CAT. However, this is not limited thereto, the resonant layer may be formed by depositing an additional layer on the electron functional layer EFL or under the hole functional layer HFL. For another example, the anode electrode is made of a light transmissive layer, an insulating layer having a certain thickness is below the light transmissive layer, and then only in the pixel requiring to adjust the resonance interval, a resonance layer may be further deposited between the insulating layer and the light transmissive layer, or the thickness of the insulating layer is formed differently only in the pixel requiring to adjust the resonance interval.In accordance with the above-explained first exemplary embodiment to third exemplary embodiment, the light emitting display device according to the present disclosure may include three pixels providing three color terms, wherein, to ensure the micro-cavity structure, a first emission layer is disposed in the first pixel and the second pixel, and a second emission layer is disposed in the third pixel. The first emission layer and the second emission layer may be formed with different thicknesses. As a result, by adjusting the thickness of the second emission layer, a micro-cavity structure may be implemented at the third pixel. That is, the micro cavity for the third pixel may be implemented without forming a resonant layer.Further, the first emission layer may be set to have a thickness for implementing the micro-cavity effect in the first pixel, and a resonance layer may be added to the second pixel for implementing the micro-cavity effect for the second pixel. Therefore, the number of resonant layers or manufacturing steps for forming the resonant layers having different thicknesses from each other can be minimized. Furthermore, the micro-cavity effect and structure can be implemented accurately and precisely in each of the three pixels.In the above-mentioned embodiments, the first pixel is the green pixel, the second pixel is the red pixel, and the third pixel is the blue pixel. This configuration is intended to facilitate brightness control by independently using the blue pixel because higher brightness is required from the blue pixel due to the device characteristics currently used for the emission layer. Therefore, depending on the characteristics of the material used in the emission layer or the conditions of the color combination for generating white light, the first pixel, the second pixel, and the third pixel may have a combination of colors different from the combination of green, red, and blue.Also, since a micro-cavity structure can be accurately set for each color pixel, a reinforced micro-cavity structure can be implemented as the existing one. Therefore, each pixel without color filters can provide clear and live color light over the cathode electrode CAT. Without color filters, there is no reduction in the brightness of the light that may occur when the light passes through the color filters. As a result, the present disclosure can provide a light emitting display in which higher brightness can be provided at the same power consumption or power consumption can be lowered to achieve the same brightness.Accordingly, the present disclosure can provide a light emitting display device having a simple structure and manufacturing process, and a low cost for manufacturing the display device. The light emission efficiency of the color light assigned to each pixel can be maximized. Since an improved micro cavity structure can be implemented, each pixel can provide clear color light without using a color filter. Accordingly, the present disclosure can provide a light emitting display device having high brightness and low power consumption.The features, structures, effects, etc. described in the above examples of the present disclosure are included in at least one example of the present disclosure, and are not limited to only one example. Moreover, the features, structures, effects, etc. illustrated in at least one example may be implemented by those skilled in the art to which this disclosure pertains, in combination or in variation with respect to other examples. Accordingly, contents concerning such combinations and variations should be construed as being included in the scope of the present disclosure.It will be apparent to those skilled in the art that various modifications and variations can be made in the present disclosure without departing from the scope of the disclosure. Therefore, it is intended that the present disclosure cover the modifications and variations of this disclosure provided they come within the scope of the appended claims.References included in the specificationThis list of documents cited by the applicant has been produced in an automated manner and is only included for the better information of the reader. The list is not part of the German patent application or utility model application. The DPMA does not take any adhesion for any faults or omissions.Patent Literature citedKR 10 - 2023 - 0 181 716

[0001]

Claims

A light emitting display device, comprising: a substrate (110); a first pixel (PG) configured to provide first light, a second pixel (PR) configured to provide second light, and a third pixel (PB) configured to provide third light, wherein the first pixel (PG), the second pixel (PR), and the third pixel (PB) are arranged in a matrix on the substrate (110); anode electrodes (ANO1, ANO2, ANO3) disposed in associated fashion in the first pixel (PG), the second pixel (PR) and the third pixel (PB), each anode electrode having a light transmissive layer (TRL) and a reflective layer (REF) disposed under the light transmissive layer (TRL); a first emission layer (E1) disposed in the first pixel (PG) and the second pixel (PR) on the anode electrodes (ANO1, ANO2); a second emission layer (E2) disposed in the third pixel (PB) on the anode electrode (ANO3); a cathode electrode (CAT) on the first emission layer (E 1) and the second emission layer (E 2); and a resonant layer (CAL) disposed at one of an upper side and a lower side of the first emission layer (E 1).The light emitting display device according to claim 1, wherein a first distance (MG) between the reflective layer (REF) and the cathode electrode (CAT) in the first pixel (PG) is set to a first resonance distance corresponding to an integer multiple of half the wavelength of the first light, wherein a second distance (MR) between the reflective layer (REF) and the cathode electrode (CAT) in the second pixel (PR) is set to a second resonance distance corresponding to an integer multiple of half the wavelength of the second light, and wherein a third distance (MB) between the reflective layer (REF) and the cathode electrode (CAT) in the third pixel (PB) is set to a third resonance distance, which corresponds to an integer multiple of half the wavelength of the third light.The light emitting display device according to claim 2, wherein a thickness of the first emission layer (E1) corresponds to the first resonance interval, wherein a total thickness of the first emission layer (E1) and the resonance layer (CAL) corresponds to the second resonance interval, and wherein a thickness of the second emission layer (E2) corresponds to the third resonance interval.The light emitting display device of claim 3, wherein the first light is green light, wherein the second light is red light, and wherein the third light is blue light.The light emitting display device of claim 3, wherein the first light is red light, wherein the second light is green light, and wherein the third light is blue light.The light emitting display device according to any one of claims 3 to 5, wherein the anode electrodes (ANO1, ANO2, ANO3) include: a first anode electrode (ANO1) disposed in the first pixel (PG); a second anode electrode (ANO2) disposed in the second pixel (PR); and a third anode electrode (ANO3) disposed in the third pixel (PB), wherein the second anode electrode (ANO2) includes the light transmissive layer (TRL) and the resonant layer (CAL).The light emitting display device according to claim 6, wherein the cathode electrode (CAT) includes a semi-light transmissive layer that allows some parts of the light provided by the first emission layer (E1) and the second emission layer (E2) to pass therethrough and reflects the remaining parts of the light.The light emitting display device according to claim 6 or 7, wherein the first anode electrode (ANO1) and the third anode electrode (ANO3) include the reflective layer (REF) and the transmissive layer (TRL), and wherein the second anode electrode (ANO2) includes the reflective layer (REF), the transmissive layer (TRL), and the resonant layer (CAL).The light emitting display device according to claim 2, wherein a total thickness of the first emission layer (E1) and the resonance layer (CAL) corresponds to the first resonance distance, wherein a thickness of the first emission layer (E1) corresponds to the second resonance distance, and wherein a thickness of the second emission layer (E2) corresponds to the third resonance distance, wherein the second anode electrode (ANO2) and the third anode electrode (ANO3) include the reflective layer (REF) and the transmissive layer (TRL), and wherein the first anode electrode (ANO1) includes the reflective layer (REF), the transmissive layer (TRL), and the resonance layer (CAL).The light emitting display device according to claim 1, wherein the cathode electrode (CAT) includes: a transparent cathode layer (IT); and a semi-transparent cathode layer (HT) on the transparent layer (TRL), and wherein the resonance layer (CAL) in the second pixel (PR) is disposed at one of between the transparent cathode layer (IT) and the semi-transparent cathode layer (HT) and below the transparent cathode layer (IT).The light emitting display device according to claim 10, wherein a first distance (MG) between the reflective layer (REF) and the semi-transmissive cathode layer (HT) in the first pixel (PG) is set to a first resonance distance corresponding to an integer multiple of half the wavelength of the first light, wherein a second distance (MR) between the reflective layer (REF) and the semi-transmissive cathode layer (HT) in the second pixel (PR) is set to a second resonance distance corresponding to an integer multiple of half the wavelength of the second light, and wherein a third distance (MB) between the reflective layer (REF) and the semi-transmissive cathode layer (HT) in the third pixel (PB) is set to a third resonance distance corresponding to an integer multiple of half the wavelength of the third light.The light emitting display device according to any one of claims 1 to 11, wherein the first emission layer (E1) includes: a first light emitting layer (EM1) configured to provide first light; a charge generation layer (CGL) disposed on the first light emitting layer (EM1); and a second light emitting layer (EM2) disposed on the charge generation layer (CGL) and configured to provide second light.The light emitting display device of claim 12, wherein the first light emitting layer (EM1) comprises a first light emitting material configured to provide green light, and wherein the second light emitting layer (EM2) comprises a second light emitting material configured to provide red light.The light emitting display device of claim 12, wherein the first light emitting layer (EM1) comprises a first light emitting material configured to provide red light, and wherein the second light emitting layer (EM2) comprises a second light emitting material configured to provide green light.The light emitting display device according to any one of claims 1 to 14, wherein the second emission layer (E2) includes only a third light emitting material configured to provide blue light.The light emitting display device according to any one of claims 1 to 14, wherein the second emission layer (E2) includes: a third light emitting layer including a third light emitting material configured to provide blue light; a charge generation layer disposed on the third light emitting layer; and a fourth light emitting layer disposed on the charge generation layer and including the third light emitting material configured to provide blue light.The light emitting display device according to claim 1 to 16, further comprising: a hole function layer (HFL) disposed between the anode electrode (ANO1, ANO2, ANO3) and the first emission layer (E1) and the second emission layer (E2); and an electron function layer (EFL) disposed between the cathode electrode (CAT) and the first emission layer (E1) and the second emission layer (E2).The light emitting display device according to claim 17, wherein the resonance layer (CAL) is disposed at one of between the hole function layer (HFL) and the first emission layer (E1), and between the first emission layer (E1) and the electron function layer (EFL).The light emitting display device according to any one of claims 1 to 18, wherein the light transmissive layer (TRL) is disposed between the resonant layer (CAL) and the reflective layer (REF).A light emitting display device, comprising: a substrate (110); a first pixel (PG) configured to provide first light, a second pixel (PR) configured to provide second light, and a third pixel (PB) configured to provide third light, wherein the first pixel (PG), the second pixel (PR), and the third pixel (PB) are arranged in a matrix on the substrate (110); anode electrodes (ANO1, ANO2, ANO3) disposed in associated fashion in the first pixel (PG), the second pixel (PR) and the third pixel (PB), each anode electrode having a light transmissive layer (TRL) and a reflective layer (REF) disposed under the light transmissive layer (TRL); a first emission layer (E1) disposed on the anode electrodes (ANO1, ANO2) in the first pixel (PG) and the second pixel (PR); a second emission layer (E2) disposed on the anode electrode (ANO3) in the third pixel (PB); a cathode electrode (CAT) on the first emission layer (E1) and the second emission layer (E2); and a resonance layer (CAL) disposed on the light transmissive layer (TRL) in the first pixel (PG) or the second pixel (PR).

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