Lighting device

Abstract

[Task] A lighting device is to be implemented that can reduce power consumption when the output power of the light emitted by the lighting device is regulated. [Means of solving the problem] A lighting device 1 comprises one or more first semiconductor laser elements, second semiconductor laser elements that emit light of the same color as the first semiconductor laser element(s) and are present in greater numbers than the first semiconductor laser element(s), a carrier on which the first semiconductor laser element(s) and the second semiconductor laser elements are arranged, several wiring sections provided on the carrier, and several wiring leads that electrically connect the first semiconductor laser element(s) and the second semiconductor laser elements to the several wiring sections, wherein, by means of the several wiring sections and the several wiring leads, a first current path, which drives only the first semiconductor laser element(s) and the second semiconductor laser elements, and a second current path,which only drives the second semiconductor laser elements, and a third current path, which drives the first semiconductor laser element(s) and the second semiconductor laser elements, are provided.

Description

[Technical field]

[0001] The present invention relates to a lighting device. [State of the art]

[0002] Patent document 1 discloses a lighting device in which several semiconductor laser elements are electrically connected in series by means of wiring. In the lighting device from patent document 1, a current value is regulated when the output power of the light emitted by the lighting device is regulated. [Patent literature on the state of the art][Patent literature]

[0003] [Patent Document 1] JP 2023-093575 A [Brief description of the invention][Problem to be solved by the invention]

[0004] The aim is to implement a lighting device that can reduce power consumption when the output power of the light emitted by the lighting device is regulated. [Means to solve the problem]

[0005] A lighting device disclosed in one embodiment comprises one or more first semiconductor laser elements, one or more second semiconductor laser elements, a support on which one or more first semiconductor laser elements and one or more second semiconductor laser elements are arranged, several wiring sections provided on the carrier, and several wiring leads that electrically connect the one or more first semiconductor laser elements and the one or more second semiconductor laser elements to the multiple wiring sections, wherein one or more first semiconductor laser elements and one or more second semiconductor laser elements emit light of the same color, wherein the number of one or more second semiconductor laser elements arranged on the carrier is at least one greater than the number of one or more first semiconductor laser elements arranged on the carrier, wherein a first current path, which drives only the one or more first semiconductor laser elements from the one or more first semiconductor laser elements and the one or more second semiconductor laser elements, is provided by means of the multiple wiring sections and the multiple wiring lines, a second current path that drives only the one or more second semiconductor laser elements from the one or more first semiconductor laser elements and the one or more second semiconductor laser elements, and a third current path, which connects one or more of the first semiconductor laser elements and that controls one or more second semiconductor laser elements are provided.

[0006] In at least one of the one or more inventions disclosed by the embodiment, a lighting device can be implemented which can reduce power consumption when the output power of the light emitted by the lighting device is regulated. [Brief description of the characters] Fig. Figure 1 is a perspective view of a lighting device according to one embodiment. Fig. 2 is a Fig. 1 corresponding side view. Fig. Figure 3 is a sectional view of the lighting device on line III-III. Fig. 1. Fig. Figure 4 is a perspective view of a housing according to the embodiment. Fig. Figure 5 is a sectional view of the housing along line VV. Fig. 4. Fig. Figure 6 is a top view of a support according to the embodiment. Fig. Figure 7 is a bottom view of the carrier according to the embodiment. Fig. 8 is a sectional view of the support at line VIII-VIII from Fig. 6. Fig. Figure 9 is a perspective view to illustrate the internal structure of the lighting device according to the embodiment. Fig. Figure 10 is a top view to illustrate the internal structure of the lighting device according to the embodiment. Fig. Figure 11 is a top view of the area around a semiconductor laser element according to the embodiment. Fig. Figure 12 is a side view of the area around the semiconductor laser element according to the embodiment. Fig. Figure 13A relates to a lighting device according to a first example and is a top view to explain the condition of a wiring connection. Fig. 13B is an electrical circuit diagram that Fig. 13A corresponds to this. Fig. Figure 14A relates to a lighting device according to a second example and is a top view to explain the condition of a wiring connection. Fig. 14B is an electrical circuit diagram that Fig. 14A is equivalent. Fig. 15A relates to a lighting device according to a third example and is a top view to explain the condition of a wiring connection. Fig. 15B is an electrical circuit diagram that Fig. 15A is equivalent. [Emphasis of the invention]

[0007] In the present description and claims, polygonal shapes such as triangular shapes, quadrilateral shapes, and the like are referred to as polygonal shapes, including those shapes on which machining has been performed to round, chamfer, bevel, or remove the corners. This is not limited to the corners (ends of sides), and shapes on which machining has been performed on the middle portions of the sides are also referred to as polygonal shapes. That is to say, shapes on which partial machining has been performed, whereby the basic polygonal shape remains, are included in the interpretation of a "polygonal shape" within the meaning of the description and the claims.

[0008] This is not limited to polygonal shapes, and the same applies to words that express specific shapes, such as trapezoidal, circular, or concave-convex. Furthermore, it also applies to the treatment of the individual sides that make up these shapes. Thus, even if a corner or the middle part of a side has been modified, the interpretation of "side" includes the modified part. If a distinction is to be made between unmodified "polygonal shapes" or "sides" and modified shapes, this is done by adding "exactly," as for example, by describing "exactly rectangular shape."

[0009] Information in the present description or the claims such as above and below (upwards / downwards), left and right, front and back, front and back (forwards / backwards), foreground and background and the like merely indicate a relationship such as a relative position, orientation, direction or the like and need not correspond to the relationship in use.

[0010] Directions such as the X, Y, and Z directions, and the like, in the figures can also be indicated by arrows. These arrow directions are consistent across multiple views of the same embodiment. In the figures, the arrow directions indicated by X, Y, and Z are the positive direction, while the opposite direction is the negative direction. For example, a direction where the tip of the arrow is marked with an X is the X direction and the positive direction. In this description, a direction that is the X direction and the positive direction is referred to as the "positive X direction," and the opposite direction as the "negative X direction." When the term "X direction" is used, it includes both the positive and negative directions. The same applies to the Y and Z directions.

[0011] If, in the present description, an object is defined as "one or more" and this object is described, the description is furthermore comprehensive, covering both the singular and plural existence of the object. A description that specifies that "one or Since “several” embodiments are present, embodiments comprising one or more objects, embodiments comprising at least one object, and embodiments comprising multiple objects are all covered.

[0012] Furthermore, in the present description, statements describing "one or each" object serve as overarching statements for the description of a single object in an embodiment comprising a single object, the description of a single object in an embodiment comprising multiple objects, and the description of each object in an embodiment comprising multiple objects. Thus, the description of "one or each" object covers the following: in an embodiment comprising a single object, that single object contains the content of the description; in an embodiment comprising multiple objects, at least one of these objects contains the content of the description; in an embodiment comprising multiple objects, each of the multiple objects contains the content of the description; and in an embodiment comprising one or more objects, all objects contain the content of the description.

[0013] The present description also uses terms like "elements" or "sections" when describing constituent parts and the like. An "element" is defined as an object treated as a physical unit. An object treated as a physical unit can also be described as an object that is handled as a component in a manufacturing step. A "section," on the other hand, refers to an object that does not need to be treated as a physical unit. For example, "section" is used when a part of a single element is partially perceived, or when several elements are perceived together as a single object.

[0014] The distinction between "element" and "section" discussed above is not intended to represent a deliberate limitation of the scope of protection in the equivalence-based interpretation. That is to say, even if a constituent part is specified as an "element" in the claims, the applicant does not thereby concede that, solely by virtue of this specification, the treatment of this constituent part as a physical unit is indispensable for the application of the present invention.

[0015] If a constituent part is present multiple times, it may also occur that, for the purpose of differentiation, the constituent parts are prefixed with terms like "first" and "second" in the present description or the claims. Furthermore, the objects distinguished between them may differ from one another in the present description and the claims. Thus, even if the claims specify constituent parts that are designated by prefixes in the same way as in the description, the objects defined by these constituent parts may not correspond in the present description and in the claims.

[0016] For example, the present description may contain constituent parts distinguished by prefixing them with "first," "second," and "third." In a case where the claims specify the constituent parts prefixed with "first" and "third" in the present description, these constituent parts are distinguished in the claims for ease of identification by prefixing them with "first" and "second." In this case, the constituent parts prefixed with "first" and "second" in the claims refer to the constituent parts prefixed with "first" and "third" in the description. This rule applies not only to constituent parts but is also applied flexibly and appropriately to other objects.

[0017] One embodiment of the present invention is described below. A specific form of implementation of the present invention is also described with reference to the figures. However, the embodiment of the present invention is not limited to this specific form of implementation. The illustrated embodiment is therefore not the only way in which the present invention can be implemented. For the sake of clarity, the sizes, positional relationships, and the like of the elements shown in the individual views may be exaggerated. <Ausführungsform>

[0018] A lighting device 1 according to the embodiment is described. Fig. Figures 1 to 7 are views illustrating an embodiment of a housing 10. Fig. Figure 1 is a perspective view of a lighting device 1 according to one embodiment. Fig. 2 is a Fig. 1 corresponding side view. Fig. Figure 3 is a sectional view of the lighting device 1 at line III-III. Fig. 1. Fig. Figure 4 is a perspective view of the housing 10 according to the embodiment. Fig. Figure 5 is a sectional view of housing 10 along line VV. Fig. 4. Fig. Figure 6 is a top view of a support 11 according to the embodiment. Fig. Figure 7 is a bottom view of the support 11 according to the embodiment. Fig. Figure 8 is a sectional view of the support 11 at line VIII-VIII. Fig. 6. Fig. Figure 9 is a perspective view to illustrate the internal structure of the lighting device 1 according to the embodiment. Fig. Figure 10 is a top view to illustrate the internal structure of the lighting device 1 according to the embodiment. Fig. Figure 11 is a top view of the area around a semiconductor laser element 20 according to the embodiment. Fig. Figure 12 is a side view of the area around the semiconductor laser element 20 according to the embodiment. (Lighting device 1)

[0019] The lighting device 1 comprises several constituent parts. These several constituent parts include a housing 10, one or more semiconductor laser elements 20, one or more submounts 30, one or more reflective elements 40, one or more protective elements 50, several wiring leads 60 and an optical element 70.

[0020] The lighting device 1 may also include further constituent parts. For example, the lighting device 1 may include further semiconductor laser elements separately from the one or more semiconductor laser elements 20. The lighting device 1 also need not include some of the several constituent parts listed here.

[0021] First, the individual constituent parts are described. (Case 10)

[0022] The housing 10 comprises a support 11 and a cover body 14. The housing 10 is formed by connecting the cover body 14 to the support 11. An interior space is partitioned within the housing 10, in which other constituent parts are arranged. This interior space is a closed chamber enclosed by the support 11 and the cover body 14. This interior space can also be sealed in a vacuum or airtight condition.

[0023] Viewed from above, the outer edge shape of the housing 10 is a rectangle. This rectangle can be a rectangle with long sides and short sides. In the housing 10 shown, the direction of the long sides of this rectangle corresponds to the X-direction and the direction of the short sides corresponds to the Y-direction. Viewed from above, the outer edge shape of the housing 10 does not have to be a rectangle.

[0024] The housing 10 has an interior space in which other constituent parts are arranged. A first upper surface 11A of the housing 10 is part of a region dividing the interior space. An inner surface 11E and a lower surface 14B of the housing 10 are also each part of the region dividing the interior space.

[0025] Beam 11 has a first upper surface 11A and a lower surface 11B. Beam 11 has a second upper surface 11C. Beam 11 has one or more outer surfaces 11D. Beam 11 has one or more inner surfaces 11E. The one or more outer surfaces 11D intersect the second upper surface 11C. The one or more outer surfaces 11D intersect the lower surface 11B. The one or more inner surfaces 11E intersect the second upper surface 11C.

[0026] Viewed from above, the outer edge shape of the support 11 is rectangular. Viewed from above, the outer edge shape of the support 11 is the outer edge shape of the housing 10. Viewed from above, the outer edge shape of the first upper surface 11A is rectangular. This rectangular shape can be a rectangle with long sides and short sides. The direction of the long sides of the first upper surface 11A is parallel to the direction of the long sides of the outer edge shape of the support 11. Viewed from above, the outer edge shape of the first upper surface 11A need not be rectangular.

[0027] Viewed from above, the first upper surface 11A is surrounded by the second upper surface 11C. The second upper surface 11C, viewed from above, is an annular surface surrounding the first upper surface 11A. The second upper surface 11C is a surface in the form of a rectangular ring. A frame defined by the inner edge of the second upper surface 11C is referred to here as the inner frame of the second upper surface 11C, and a frame defined by the outer edge of the second upper surface 11C is referred to here as the outer frame of the second upper surface 11C.

[0028] The support 11 has a recessed section surrounded by the frame formed by the second upper surface 11C. The recessed section divides a portion of the support 11 that extends further downwards than the second upper surface 11C. The first upper surface 11A is part of the recessed section. One or more inner surfaces 11E are also part of the recessed section. The second upper surface 11C is located further above the first upper surface 11A.

[0029] The support 11 has one or more step sections 11F. The step section 11F has a top surface 11G and a side surface 11H that intersects the top surface 11G and extends downwards from the top surface 11G. A surface having a single step section 11F consists of a single top surface 11G and a single side surface 11H. The top surface 11G intersects the inner surface 11E. The side surface 11H intersects the first top surface 11A.

[0030] The one or more step sections 11F are provided on the inside of the inner frame of the second upper surface 11C when viewed from above. The one or more step sections 11F are formed along a part or all of the inside surface 11E when viewed from above. Although the side surface 11H of the support 11 is an inside surface, the side surface 11H and the inside surface 11E are distinct surfaces. The one or more inside surfaces 11E and the one or more side surfaces 11H are perpendicular to the first upper surface 11A. The perpendicularity here allows for a deviation of ±3 degrees.

[0031] The one or more step sections 11F can include a first step section 11F1 and a second step section 11F2. The first step section 11F1 and the second step section 11F2 are positioned opposite their respective side faces 11H. The first step section 11F1 and the second step section 11F2 are positioned on the short sides of the inner frame of the second upper face 11C.

[0032] The one or more inner surfaces 11E can include a first inner surface 11E1 and a second inner surface 11E2, which are opposite each other. The first upper surface 11A is provided between the first inner surface 11E1 and the second inner surface 11E2 when viewed from above. The first step section 11F1 is provided on the side of the first inner surface 11E1. The second step section 11F2 is provided on the side of the second inner surface 11E2.

[0033] The support 11 has a base section 11M and a frame section 11N.

[0034] The base section 11M and the frame section 11N can be made of different materials. The beam 11 can be configured with a base element corresponding to base section 11M and a frame element corresponding to frame section 11N.

[0035] The first upper surface 11A is contained in the base section 11M. The second upper surface 11C is contained in the frame section 11N. The one or more outer surfaces 11D and the one or more inner surfaces 11E are contained in the frame section 11N. The one or more step sections 11F are contained in the frame section 11N.

[0036] The lower surface of the base section 11M forms part or all of the area of ​​the lower surface 11B of the beam 11. If the lower surface of the base section 11M forms part of the area of ​​the lower surface 11B of the beam 11, the lower surface of the frame section 11N forms the remaining area of ​​the lower surface 11B of the beam 11.

[0037] The carrier 11 has several wiring sections 12A. The several wiring sections 12A include one or more wiring sections 12A1 located inside the housing 10 and one or more wiring sections 12A2 provided on the outer surface of the housing 10.

[0038] The multiple wiring sections 12A1 contain one or more wiring sections 12A1 that are provided on the side of the first inner surface 11E1. The multiple wiring sections 12A1 contain one or more wiring sections 12A1 that are provided on the side of the second inner surface 11E2.

[0039] The one or more wiring sections 12A1 provided on the side of the first inner surface 11E1 may contain a first wiring section 11A11 and a second wiring section 12A12. The one or more wiring sections 12A1 provided on the side of the second inner surface 11E2 may contain a third wiring section 12A13 and a fourth wiring section 12A14.

[0040] One or more wiring sections 12A1 are provided on the upper surface 11G of the stage section 11F. The carrier 11 has one or more wiring sections 12A1 provided on the upper surface 11G of the first stage section 11F1. The carrier 11 has one or more wiring sections 12A1 provided on the upper surface 11G of the second stage section 11F2.

[0041] One or more wiring sections 12A2 are provided on the lower surface 11B of the housing 10. One or more wiring sections 12A2 are provided on the lower surface of the frame section 11N. The wiring sections 12A2 may also be provided on an external surface other than the lower surface 11B of the housing 10.

[0042] If the carrier 11, viewed from above, is divided into two areas by an imaginary line passing through the side surface 11H of the first stage section 11F1 and parallel to that side surface 11H, then the carrier 11 has the one or more wiring sections 12A2 provided on the lower surface 11B of the carrier 11 in the area containing the upper surface 11G of that first stage section 11F1.

[0043] If the carrier 11, viewed from above, is divided into two areas by an imaginary line passing through the side surface 11H of the second stage section 11F2 and parallel to that side surface 11H, then the carrier 11 has the one or more wiring sections 12A2 provided on the lower surface 11B of the carrier 11 in the area containing the upper surface 11G of that second stage section 11F2.

[0044] On carrier 11, one or more wiring sections 12A1 are electrically connected to wiring section 12A2. Each of the wiring sections 12A1 is electrically connected to a different wiring section 12A2.

[0045] The carrier 11 has a connection pattern 13A. The connection pattern 13A is provided on the second upper surface 11C. The connection pattern 13A is provided in a ring shape. The connection pattern 13A is provided in the form of a rectangular ring. Viewed from above, the first upper surface 11A is surrounded by the connection pattern 13A.

[0046] The support 11 can, for example, be formed using ceramic as the main material. Examples of ceramics forming the main material of the support 11 include aluminum nitride, silicon nitride, aluminum oxide, or silicon carbide.

[0047] The main material is defined as the material that constitutes the largest proportion, by mass or volume, in a molded body representing an object. If the molded body representing the object is made of a single material, then that material is the main material. Therefore, a material being the main material implies that its proportion can be 100%.

[0048] The support 11 can be formed using a base element and a frame element, which are made of different main materials. The base element can, for example, be made of a material with excellent heat dissipation, such as metal, a metal-containing composite material, graphite, diamond, or the like. The metal forming the main material of the base element could be, for example, copper, aluminum, or iron. The metal-containing composite forming the main material of the base element could be, for example, copper-molybdenum or copper-tungsten. The frame element can, for example, be made of the ceramic material mentioned above as the main material of the support 11.

[0049] Wiring section 12A can, for example, be formed using a metal material as its main material. The metal material forming the main material of wiring section 12A could be, for example, a single metal such as Cu, Ag, Ni, Au, Ti, Pt, Pd, Cr, W, or the like, or an alloy or similar containing these metals. Wiring section 12A can, for example, be formed by one or more layers of metal.

[0050] The compound pattern 13A can, for example, be formed using a metal material as the main material. The metal material forming the main material of compound pattern 13A could be, for example, a single metal such as Cu, Ag, Ni, Au, Sn, Ti, Pd, or the like, or an alloy or the like containing these metals. Compound pattern 13A can, for example, be formed by one or more layers of metal.

[0051] The lid body 14 has a top surface 14A and a bottom surface 14B. The lid body 14 also has one or more side surfaces 14C. The lid body 14 is designed in the form of a cuboid flat plate. However, the shape of the lid body 14 need not be cuboid.

[0052] The lid body 14 is connected to the carrier 11. The lower surface 14B of the lid body 14 is connected to the second upper surface 11C of the carrier 11. The lid body 14 is connected to the connection pattern 13A of the carrier 11. The lid body 14 is connected to the carrier 11 via an adhesive.

[0053] The lid body 14 has a light transmittance that allows light to pass through. Light transmittance is defined here as a transmittance of at least 80% with respect to the light incident on the lid body 14. The lid body 14 may have a non-transparent area (area without light transmittance) in one part.

[0054] The lid body 14 can, for example, be made using glass as the main material. Alternatively, the lid body 14 can, for example, be made using sapphire as the main material. (Semiconductor laser element 20)

[0055] The semiconductor laser element 20 has a top surface 21A, a bottom surface 21B, and several side surfaces 21C. The top surface 21A is rectangular with long sides and short sides. The outer shape of the semiconductor laser element 20 when viewed from above is also rectangular with long sides and short sides. The shape of the top surface 21A and the outer shape of the semiconductor laser element 20 when viewed from above are not limited to this.

[0056] The semiconductor laser element 20 has a light-emitting surface 22 that emits light. For example, a side surface 21C can be the light-emitting surface 22. The side surface 21C, which is the light-emitting surface 22, intersects the short sides of the upper surface 21A. Alternatively, the upper surface 21A can also be the light-emitting surface 22.

[0057] A single-emitter semiconductor laser element, in which a single emitter is formed, can be applied to the semiconductor laser element 20. A multiple-emitter semiconductor laser element, in which several emitters are formed, can also be applied to the semiconductor laser element 20.

[0058] The semiconductor laser element 20 emits light with a peak emission wavelength in the range of 320 nm to 530 nm. Alternatively, the semiconductor laser element 20 emits light with a peak emission wavelength in the range of 430 nm to 480 nm. A semiconductor laser element 20 that emits light with such a peak emission wavelength can be one that incorporates a nitride semiconductor. For example, a GaN semiconductor such as GaN, InGaN, AlGaN, or the like can be used as the nitride semiconductor. The light emitted by the semiconductor laser element 20 need not be limited to the wavelength range mentioned above.

[0059] The semiconductor laser element 20 emits directed laser light. Divergent light is emitted from the light emission surface 22 of the semiconductor laser element 20 (light emission end surface). The light emitted by the semiconductor laser element 20 forms an elliptical far-field pattern (hereinafter referred to as "FFP") in a plane parallel to the light emission surface 22. FFP is a shape and intensity distribution of the emitted light at a position remote from the light emission surface of the semiconductor laser element.

[0060] The light passing through the center of the elliptical shape of the FFP, in other words, the light with the peak intensity in the FFP's light intensity distribution, is referred to as the light passing along or through the optical axis. Furthermore, in the FFP's light intensity distribution, the light with an intensity of at least 1 / e 2of the peak intensity value, referred to as the light of the main part.

[0061] The shape of the FFP of the light emitted by the semiconductor laser element 20 in the plane parallel to the light emission surface 22 is elliptical, with one layering direction being longer than the direction perpendicular to the layering direction. The layering direction is the direction in which several semiconductor layers, including an active layer, are stacked in the semiconductor laser element 20. The direction perpendicular to the layering direction can also be described as the surface direction of the semiconductor layer. The direction of the longer diameter of the elliptical shape of the FFP can also be described as the direction of the fast axis of the semiconductor laser element 20, and the direction of the shorter diameter as the direction of the slow axis of the semiconductor laser element 20.

[0062] The angle at which, based on the light intensity distribution of the FFP, the light of intensity 1 / e 2 The angle of propagation of the light of the peak light intensity is considered to be the light propagation angle of the semiconductor laser element 20. The light propagation angle is given by the angle formed by the light of the peak light intensity (light passing through the optical axis) and the light of the light intensity of 1 / e 2 the peak light intensity is formed.

[0063] The angle of light propagation can be determined not only by the light intensity but also by 1 / e 2 The peak luminous intensity can also be determined, for example, from the luminous intensity of half the peak luminous intensity. When the present description simply refers to the "angle of propagation of light," this refers to the angle of propagation of light at a luminous intensity of 1 / e. 2 peak light intensity.

[0064] The propagation angle of the light emitted by the semiconductor laser element 20 in the direction of the fast axis can be 15 degrees or more and less than 40 degrees. Furthermore, the propagation angle of this light in the direction of the slow axis can be greater than 0 degrees and at most 10 degrees. For this light, the propagation angle of the fast axis is also greater than the propagation angle of the slow axis. (Submount 30)

[0065] The submount 30 has a top surface 31A, a bottom surface 31B, and one or more side surfaces 31C. The top surface 31A can be described as a mounting surface on which other constituent parts are mounted. The shape of the top surface 31A is rectangular. This rectangular shape of the top surface 31A can have short sides and long sides. However, the shape of the top surface 31A does not have to be rectangular.

[0066] The outer shape of the submount 30, viewed from above, is rectangular. This rectangular shape of the submount 30 can have short sides and long sides. However, the outer shape of the submount 30, viewed from above, need not be rectangular. The submount 30 can have an outer shape in which, viewed from above, a length in one direction (hereinafter referred to as the short direction of the submount 30) is less than a length in a direction perpendicular to it (hereinafter referred to as the long direction of the submount 30). In the submount 30 shown, the short direction corresponds to the X direction and the long direction to the Y direction.

[0067] The submount 30 can be configured with a circuit board 32A and an upper metal element 32B. Furthermore, the submount 30 can also be configured with a lower metal element 32C. The upper metal element 32B is provided on the upper surface of the circuit board 32A. The lower metal element 32C is provided on the lower surface of the circuit board 32A. The submount 30 also has a wiring layer 33. The wiring layer 33 is provided above the upper metal element 32B.

[0068] Circuit board 32A has insulating properties. Circuit board 32A is made, for example, of silicon nitride, aluminum nitride, or silicon carbide. A ceramic with relatively good heat dissipation (high thermal conductivity) can be selected as the main material for circuit board 32A.

[0069] The main material of the upper metal element 32B can be a metal such as copper, aluminum, or the like. The upper metal element 32B has one or more metal layers. The upper metal element 32B can have multiple metal layers with different metals as the main material.

[0070] The main material of the lower metal element 32C can be a metal such as copper, aluminum, or the like. The lower metal element 32C has one or more metal layers. The lower metal element 32C can have multiple metal layers, each with a different metal as the main material.

[0071] The wiring layer 33 can be formed using metal. For example, the wiring layer 33 can be formed using AuSn solder (a metal layer made of AuSn).

[0072] The length of the submount 30 in the direction of the short sides or the short direction is, for example, at least 700 µm and at most 1200 µm. The length of the submount 30 in the direction of the long sides or the longitudinal direction is furthermore at least 1000 µm and at most 2500 µm. The difference between the length of the submount 30 in the longitudinal direction and the length in the short direction is furthermore at least 200 µm and at most 1800 µm.

[0073] The thickness of the submount 30 (width in the direction perpendicular to the upper surface 31A) is, for example, at least 200 µm and at most 400 µm. Furthermore, the thickness of the circuit board 32A is, for example, at least 100 µm and at most 300 µm. Furthermore, the thickness of the upper metal element 32B is, for example, at least 30 µm and at most 100 µm. Furthermore, the thickness of the lower metal element 32C is, for example, at least 30 µm and at most 100 µm. Furthermore, the thickness of the wiring layer 33 is, for example, at least 1 µm and at most 10 µm. (Reflection element 40)

[0074] The reflective element 40 has a lower surface 41A and a light-reflecting surface 41B that reflects light. The light-reflecting surface 41B is further inclined with respect to the lower surface 41A. A straight line connecting the lower and upper ends of the light-reflecting surface 41B is inclined with respect to the lower surface 41A. The angle at which the light-reflecting surface 41B is inclined with respect to the lower surface 41A is called the angle of inclination of the light-reflecting surface 41B.

[0075] The light-reflecting surface 41B is a flat surface. However, the light-reflecting surface 41B can also be a curved surface. The angle of inclination of the light-reflecting surface 41B is 45 degrees. However, the angle of inclination of the light-reflecting surface 41B does not have to be 45 degrees.

[0076] The main material of the reflecting element 40 can be glass, a metal, or the like. A material with high heat resistance should be used as the main material of the reflecting element 40. For example, the main material can be glass such as quartz, BK7 (borosilicate glass), or the like, or a metal such as aluminum or the like. The reflecting element 40 can also be made with silicon as the main material.

[0077] If the main material is a reflective material such as Al or the like, the light-reflecting surface 41B can be formed from the main material. Alternatively, instead of forming the light-reflecting surface 41B using the main material, the basic shape of the reflecting element 40 can be formed from the main material, and the light-reflecting surface 41B can be formed on the surface of this basic shape. In this case, the light-reflecting surface 41B can be formed, for example, using a metal layer of Ag, Al, or the like, or a multilayer dielectric layer of Ta₂O₅ / SiO₂, TiO₂ / SiO₂, Nb₂O₅ / SiO₂, or the like.

[0078] The light-reflecting surface 41B has a reflectance of at least 90% for the peak wavelength of the light shining onto the light-reflecting surface 41B. This reflectance can also be at least 95%. This reflectance can also be at least 99%. The light reflectance is at most 100% or less than 100%. (Protective element 50)

[0079] The protective element 50 has a top surface 51A, a bottom surface 51B, and one or more side surfaces 51C. The shape of the protective element 50 is cuboid. However, the shape of the protective element 50 need not be cuboid.

[0080] The protection element 50 serves to prevent excessive current from flowing through a specific element (for example, a semiconductor laser element) and thereby destroying it. A Zener diode can be used as the protection element 50. Furthermore, a Zener diode made of silicon can be used. (Wiring line 60)

[0081] Wiring conductor 60 is a wire-shaped, electrically conductive material whose two ends serve as connecting sections. These connecting sections at both ends serve as components for connecting to other constituent parts. Wiring conductor 60 is used for the electrical connection between two constituent parts. Wiring conductor 60 is, for example, a wire made of metal. The metal could be, for example, gold, aluminum, silver, copper, or similar materials. (Optical element 70)

[0082] The optical element 70 has a top surface 71A, a bottom surface 71B, and one or more side surfaces 71C. The optical element 70 exerts an optical effect on light incident upon it. The optical effects exerted by the optical element 70 on the light include, for example, focusing, collimation, scattering, polarization, diffraction, multiplexing, light guiding, reflection, wavelength conversion, and the like.

[0083] The optical element 70 has an optically effective surface that exerts the optical effect. The upper surface 71A, the lower surface 71B, or the side surfaces 71C can be an optically effective surface. Alternatively, a different position than the upper surface 71A, the lower surface 71B, and the side surfaces 71C can have an optically effective surface. For example, the optically effective surface can be formed inside the optical element 70 instead of on its surface.

[0084] The optical element 70 can have one or more lens surfaces 71D. The lens surface 71D is an optically active surface of the optical element 70. An optical element 70 that has a lens surface 71D can also be called a lens element. The optical element 70 exerts an optical effect, such as focusing, scattering, or collimation, on the light that passes through the lens surface 71D and is emitted by it. For example, the optical element 70 is a collimating lens that transforms the light incident on the optical element 70 into collimated light and emits it.

[0085] The lens surface(s) 71D are provided on the side of the upper surface 71A. The lens surface 71D can also be provided on the side of the lower surface 71B. The upper surface 71A and the lower surface 71B are planar surfaces. The lens surface(s) 71D intersect the upper surface 71A. Viewed from above, the lens surface(s) 71D are surrounded by the upper surface 71A.

[0086] Viewed from above, the outer shape of the optical element 70 is rectangular. However, the outer shape of the optical element 70, viewed from above, need not be rectangular. The lower surface 71B is a flat surface. The lens surface 71D is not formed on the side of the lower surface 71B of the optical element 70. The shape of the lower surface 71B is rectangular. However, the shape of the lower surface 71B need not be rectangular.

[0087] On the optical element 70, a portion that, viewed from above, overlaps with the lens surface 71D is considered lens section 72A. On the optical element 70, a portion that, viewed from above, overlaps with the upper surface 71A is considered non-lens section 72B. The lower surface 71B has a region that forms the lower surface of one or more of the respective lens sections 72A, and a region that forms the lower surface of the non-lens section 72B.

[0088] The optical element 70 can have several lens surfaces 71D that are adjacent to one another in one direction. The direction in which the several lens surfaces 71D lie next to each other when viewed from above can also be described as the coupling direction of the lenses. In the optical element 70 shown, the coupling direction corresponds to the X-direction.

[0089] The multiple lens surfaces 71D are arranged such that the vertices of the individual lens surfaces 71D lie on a straight line. An imaginary straight line connecting the individual vertices is parallel to the lower surface 71B of the optical element 70. "Parallel" here includes a deviation of ±5 degrees.

[0090] The curvature of part or all of the lens surfaces 71D, and of at least two lens surfaces 71D, can be the same. All of the multiple lens surfaces 71D can have the same curvature.

[0091] The optical element 70 has light transmittance. The light transmittance of the optical element 70 for the peak wavelength of the light incident on the optical element 70 is at least 80%. The optical element 70 may have a transmitting region and a non-transmitting region (hereinafter referred to as the non-transmittable region). The light transmittance of the non-transmittable region for the peak wavelength of the light incident on the optical element 70 is at most 50%. The optical element 70 may, for example, be formed using glass such as BK7 or the like.

[0092] Next, the lighting device 1 will be described. (Lighting device 1)

[0093] In the lighting device 1, one or more semiconductor laser elements 20 are arranged on the carrier 11. The one or more semiconductor laser elements 20 are arranged on the first upper surface 11A. The lighting device 1 emits the light emitted by the one or more semiconductor laser elements 20 outwards. The one or more semiconductor laser elements 20 can be formed by at least three semiconductor laser elements 20. In other words, the lighting device 1 can comprise at least three semiconductor laser elements 20.

[0094] The one or more semiconductor laser elements 20 can comprise one or more first semiconductor laser elements 20A and one or more second semiconductor laser elements 20B. In the lighting device 1, the number of second semiconductor laser elements 20B is greater than the number of first semiconductor laser elements 20A. In other words, the number of one or more second semiconductor laser elements 20B arranged on the carrier 11 is at least one greater than the number of one or more first semiconductor laser elements 20A arranged on the carrier 11. The one or more second semiconductor laser elements 20B can therefore be formed by at least two semiconductor laser elements 20B.

[0095] In the lighting device 1, one or more first semiconductor laser elements 20A emit light of a first color. One or more second semiconductor laser elements 20B emit light of a second color. The light of the first color and the light of the second color can be of the same color. The difference between the peak emission wavelength of the light of the first color and the peak emission wavelength of the light of the second color can be at most 20 nm.

[0096] The multiple semiconductor laser elements 20, comprising one or more first semiconductor laser elements 20A and one or more second semiconductor laser elements 20B, are arranged side by side in one direction. This direction is referred to below as the first direction. In the illustrated lighting device 1, the first direction corresponds to the X-direction.

[0097] The first semiconductor laser element 20A and the second semiconductor laser element 20B have the same width in a direction perpendicular to the light-emitting surface 22, or in other words, a width in the longitudinal direction of the resonator. The first semiconductor laser element 20A and the second semiconductor laser element 20B also have the same external shape. The fact that the width is the same allows for a deviation of up to 30 µm. The fact that the external shape is the same also allows for a deviation of up to 10%.

[0098] The one or more semiconductor laser elements 20 are arranged on the one or more submounts 30. The one or more semiconductor laser elements 20 are arranged on the carrier 11 via the one or more submounts 30. The one or the respective semiconductor laser elements 20 are arranged on the wiring layer 33 of the submount 30.

[0099] Each submount 30 has only one semiconductor laser element 20 mounted on it. The lighting device 1 does not include any submounts 30 on which two semiconductor laser elements 20 are mounted. However, it may include one submount 30 on which two or more semiconductor laser elements 20 are mounted.

[0100] In the lighting device 1, one or more reflective elements 40 are arranged on the carrier 11. The one or more reflective elements 40 are arranged on the first upper surface 11A. The one or more reflective elements 40 reflect the light emitted by the one or more semiconductor laser elements 20. The light reflected by the one or more reflective elements 40 propagates upwards.

[0101] An optical axis of the light emitted by the one or more semiconductor laser elements 20 is directed at the one or more reflection elements 40 onto a virtual straight line, which, viewed from above, passes through the light-reflecting surface 41B. If the lighting device 1 comprises several semiconductor laser elements 20, the positions to which the optical axis of the light emitted by the individual semiconductor laser elements 20 shines onto the one or more reflection elements 40 lie, viewed from above, on a single straight line. Since the illumination points of the optical axis lie next to each other on a single straight line, optical control is simplified.

[0102] In the lighting device 1, one or more protective elements 50 are arranged on the carrier 11. The one or more protective elements 50 are arranged on the one or more submounts 30. The protective element 50 arranged on the submount 30 protects the semiconductor laser element 20 arranged on the submount 30. The one or the respective protective elements 50 are arranged on the wiring layer 33 of the submount 30.

[0103] In the lighting device 1, the multiple wiring leads 60 are used to electrically connect the one or more semiconductor laser elements 20. By connecting a suitable number of wiring leads 60 to the housing 10, the semiconductor laser element 20, or the submount 30, the one or more semiconductor laser elements 20 can be electrically connected to the housing 10. In this way, electrical energy can be supplied to the one or more semiconductor laser elements 20, which are arranged inside the housing 10, from an external power supply electrically connected to the housing 10.

[0104] The wiring lead 60 connected to the housing 10 is connected to the wiring section 12A1 located inside the housing 10. The multiple wiring leads 60 include one or more wiring leads 60 connected to the wiring section 12A1 provided on the side of the first inner surface 11E1, and one or more wiring leads 60 connected to the wiring section 12A1 provided on the side of the second inner surface 11E2. The first inner surface 11E1 and the second inner surface 11E2 are opposite each other in the first direction.

[0105] The lighting device 1 has a current path that can drive only one or more of the first semiconductor laser elements 20A from the one or more semiconductor laser elements 20. This current path is referred to below as the first current path. The one or more first semiconductor laser elements 20A are electrically connected in series.

[0106] The lighting device 1 has a current path that can drive only one or more second semiconductor laser elements 20B from the one or more semiconductor laser elements 20. This current path is referred to below as the second current path. The one or more second semiconductor laser elements 20B are electrically connected in series.

[0107] In this way, the lighting device 1 includes a first control stage in which light is emitted only from the one or more first semiconductor laser elements 20A, and a second control stage in which light is emitted only from the one or more second semiconductor laser elements 20B, so that the control of the lighting device 1 can be carried out selectively. It also includes a third control stage in which light is emitted from the one or more first semiconductor laser elements 20A and the one or more second semiconductor laser elements 20B, so that the control of the lighting device 1 can be carried out selectively.

[0108] If regulating the respective output power of the multiple semiconductor laser elements 20 achieves a light output that is the same as when driving a single semiconductor laser element 20 at a nominal current, the power consumption can increase compared to driving a single semiconductor laser element 20 at a nominal current. Consequently, the lighting device 1 can reduce its power consumption by regulating the output power of the light emitted by the lighting device 1.

[0109] In particular, the multiple semiconductor laser elements 20, which emit light of the same color, are divided into two or more groups such that the groups contain a different number of semiconductor laser elements 20. For example, if group 1 consists of N1 semiconductor laser elements 20 and group 2 consists of N2 semiconductor laser elements 20, and N1 ≠ N2, then the light output for N1 semiconductor laser element 20, the light output for N2 semiconductor laser element 20, and the light output for N1+N2 semiconductor laser elements 20 can be achieved simply by selecting the current path. In this way, the light output can be regulated while limiting the power consumption compared to uniformly regulating the respective light output of N1+N2 semiconductor laser elements 20.

[0110] In the lighting device 1, the first current path, which drives only one or more first semiconductor laser elements 20A, is provided by several wiring sections 12A1 and several wiring lines 60. The second current path, which drives only one or more second semiconductor laser elements 20B, is provided by several wiring sections 12A1 and several wiring lines 60. A third current path, which drives one or more first semiconductor laser elements 20A and one or more second semiconductor laser elements 20B, can be provided by several wiring sections 12A1 and several wiring lines 60.

[0111] The multiple wiring leads 60 can also be used to electrically connect one or more protective elements 50. All wiring leads 60 of the lighting device 1 include multiple wiring leads 60 that electrically connect one or more semiconductor laser elements 20 to the housing 10. All wiring leads 60 of the lighting device 1 also include multiple wiring leads 60 that electrically connect one or more protective elements 50 to the housing 10. Among the multiple wiring leads 60 that electrically connect one or more semiconductor laser elements 20 to the housing 10, one or more wiring leads 60 may also be present that electrically connect one or more protective elements 50 to the housing 10.

[0112] In the lighting device 1, the light emitted by the one or more semiconductor laser elements 20 is emitted from the upper surface 14A of the housing 10. The light emitted by a single semiconductor laser element 20 is referred to here as an element component. The light emitted by the lighting device 1 comprises one or more element components.

[0113] The main part of the light from one element component does not overlap with the main part of the light from the other element components at the upper surface 14A. The main parts of the light from the individual element components do not overlap with each other at the upper surface 14A.

[0114] In the lighting device 1, the optical element 70 is fixed to the housing 10. The optical element 70 is connected to the housing 10. The optical element 70 is connected to the housing 10 by means of an adhesive. The adhesive can be, for example, a UV-curing adhesive.

[0115] The optical element 70 is arranged above the housing 10. The light emitted from the upper surface 14A enters the optical element 70, undergoes the optical action, and is emitted by the optical element 70. For example, the optical axes of the light from the individual element components each strike different lens surfaces, and the light from the individual element components is collimated and emitted by the optical element 70.

[0116] Next, the connection design of the wiring lines 60 will be described. (Connection of the wiring lines 60 at the lighting device 1)

[0117] Fig. Figures 13A to 16B show several connection configurations applicable to the lighting device 1. In each connection configuration, one or more first semiconductor laser elements 20A are formed by a single semiconductor laser element 201, and one or more second semiconductor laser elements 20B are formed by three semiconductor laser elements 202, 203, 204. The configuration with a single semiconductor laser element 20 and three semiconductor laser elements 20 are merely examples, and the lighting device 1 is not limited to this configuration.

[0118] The lighting device 1 comprises several semiconductor laser elements 20 and their surrounding sections, as well as several wiring sections 12A. For example, in first to fourth embodiments, the lighting device 1 comprises four semiconductor laser elements 20 and their surrounding sections, as well as four wiring sections 12A. The surrounding sections of the semiconductor laser elements 20 include the submount 30 and the protective element 50. Fig. 12. (First connection version)

[0119] Fig. Figure 13A relates to the lighting device 1 and is a top view to explain the first connection design of the wiring connection. Fig. 13B is an electrical circuit diagram that Fig. 13A corresponds. In the views, “+” and “-” respectively indicate the wiring section 12A1 connected to the anode of the semiconductor laser element 20 and the wiring section 12A1 connected to the cathode.

[0120] The multiple wiring sections 12A1 include a first wiring section 12A11, a second wiring section 12A12, a third wiring section 12A13 and a fourth wiring section 12A14.

[0121] The one or more first semiconductor laser elements 20A (201) are electrically connected to the wiring section 12A1 provided on the side of the first inner surface 11E1. The semiconductor laser element 201 is electrically connected to the first wiring section 12A11 and the second wiring section 12A12. The semiconductor laser element 201 is not electrically connected to either the third wiring section 12A13 or the fourth wiring section 12A14.

[0122] The one or more second semiconductor laser elements 20B (202, 203, 204) are electrically connected to the wiring section 12A1 provided on the side of the second inner surface 11E2. The semiconductor laser elements 202, 203, 204 are electrically connected to the third wiring section 12A13 and the fourth wiring section 12A14. The semiconductor laser elements 202, 203, 204 are not electrically connected to either the first wiring section 12A11 or the second wiring section 12A12.

[0123] The multiple wiring lines 60 include a first wiring line 61, which is connected to the first wiring section 12A11 and electrically connected to the first semiconductor laser element 20A, and a second wiring line 62, which is connected to the second wiring section 12A12 and electrically connected to the first semiconductor laser element 20A. The multiple wiring lines 60 further include a third wiring line 63, which is connected to the third wiring section 12A13 and electrically connected to the second semiconductor laser element 20B, and a fourth wiring line 64, which is connected to the fourth wiring section 12A14 and electrically connected to the second semiconductor laser element 20B.

[0124] The three semiconductor laser elements 202, 203, 204 are connected in series. The first semiconductor laser element or elements 20A are further arranged at a position remote from the first semiconductor laser element or elements 20B in the first direction.

[0125] The first wiring lead 61 is connected to the semiconductor laser element 201 or to the submount 30 on which the semiconductor laser element 201 is mounted. The second wiring lead 62 is connected to the submount 30 on which the semiconductor laser element 201 is mounted, or to the semiconductor laser element 201 itself. The third wiring lead 63 is connected to the semiconductor laser element 202 or to the submount 30 on which the semiconductor laser element 202 is mounted. The fourth wiring lead 64 is connected to the submount 30 on which the semiconductor laser element 204 is mounted, or to the semiconductor laser element 204 itself.

[0126] The multiple wiring lines 60 do not include a wiring line 60 that is electrically connected to both the one or the multiple first semiconductor laser elements 20A and the one or the multiple second semiconductor laser elements 20B.

[0127] Thus, in the lighting device 1 with the first connection configuration, the first semiconductor laser element 20A is controlled, while the second semiconductor laser element 20B is not controlled, by allowing current to flow only in the first current path; the second semiconductor laser element 20B is controlled, while the first semiconductor laser element 20A is not controlled, by allowing current to flow only in the second current path; and both the first semiconductor laser element 20A and the second semiconductor laser element 20B are controlled by allowing current to flow in both the first and second current paths. (Second connection version)

[0128] Fig. Figure 14A relates to the lighting device 1 and is a top view to explain the second connection design of the wiring connection. Fig. 14B is an electrical circuit diagram that Fig. 14A corresponds. In the views, “+” and “-” respectively indicate the wiring section 12A1 connected to the anode of the semiconductor laser element 20 and the wiring section 12A1 connected to the cathode.

[0129] The multiple wiring sections 12A1 include a first wiring section 12A11, a second wiring section 12A12, and a third wiring section 12A13. The housing 10 may also have a fourth wiring section 12A14.

[0130] The one or more first semiconductor laser elements 20A (201) are electrically connected to the wiring section 12A1 provided on the side of the first inner surface 11E1. The semiconductor laser element 201 is electrically connected to the first wiring section 12A11 and the second wiring section 12A12. The semiconductor laser element 201 is electrically connected to the wiring section 12A1 provided on the side of the second inner surface 11E2. The semiconductor laser element 201 is electrically connected to the third wiring section 12A13.

[0131] The one or more second semiconductor laser elements 20B (202, 203, 204) are electrically connected to the wiring section 12A1 provided on the side of the first inner surface 11E1 and to the wiring section 12A1 provided on the side of the second inner surface 11E2. The semiconductor laser elements 202, 203, 204 are electrically connected to the first wiring section A11 and the third wiring section 12A13. The semiconductor laser elements 202, 203, 204 are electrically connected to the second wiring section 12A12 and the third wiring section 12A13.

[0132] The multiple wiring leads 60 include a first wiring lead 61, which is connected to the first wiring section 12A11 and electrically connected to the first semiconductor laser element 20A, and a second wiring lead 62, which is connected to the second wiring section 12A12 and electrically connected to the first semiconductor laser element 20A. The multiple wiring leads further include a third wiring lead 63, which is connected to the third wiring section 12A13 and electrically connected to the second semiconductor laser element 20B. The first wiring section 12A11 is also electrically connected to the second semiconductor laser element 20B.

[0133] The second wiring section 12A12 is also electrically connected to the second semiconductor laser element 20B. The third wiring section 12A13 is also electrically connected to the first semiconductor laser element 20A.

[0134] A first current path, in which the first wiring section 12A11 is the anode and the second wiring section 12A12 is the cathode, can control one or more first semiconductor laser elements 20A. A second current path, in which the third wiring section 12A13 is the anode and the first wiring section 12A11 is the cathode, can also control one or more second semiconductor laser elements 20B. A third current path, in which the third wiring section 12A13 is the anode and the second wiring section 12A12 is the cathode, can also control one or more first semiconductor laser elements 20A and one or more second semiconductor laser elements 20B.In the second connection configuration, the third current path is created, while in the first current path and the second current path, the polarity of the electrode taken over by the first wiring section 12A11 is reversed.

[0135] The three semiconductor laser elements 202, 203, 204 are connected in series. The first semiconductor laser element or elements 20A are further arranged at a position remote from the first semiconductor laser element or elements 20B in the first direction.

[0136] The first wiring line 61 is connected to the submount 30 on which the semiconductor laser element 201 is located. The second wiring line 62 is connected to the semiconductor laser element 201. The third wiring line is connected to the semiconductor laser element 204 or to the submount 30 on which the semiconductor laser element 202 is located. The multiple wiring lines 60 include a fourth wiring line 64, which is electrically connected to a first semiconductor laser element 20A and a second semiconductor laser element 20B, which are arranged adjacent to each other.

[0137] The first wiring line 61 is electrically connected to the first semiconductor laser element 20A and the second semiconductor laser element 20B. The second wiring line 62 is electrically connected to the first semiconductor laser element 20A and the second semiconductor laser element 20B. The third wiring line 63 is electrically connected to the first semiconductor laser element 20A and the second semiconductor laser element 20B. The fourth wiring line 64 is electrically connected to the first semiconductor laser element 20A and the second semiconductor laser element 20B. (Third connection type)

[0138] Fig. Figure 15A relates to the lighting device 1 and is a top view to explain the third connection configuration of the wiring connection. Fig. 15B is an electrical circuit diagram that Fig.15A corresponds. In the views, “+” and “-” respectively indicate the wiring section 12A1 connected to the anode of the semiconductor laser element 20 and the wiring section 12A1 connected to the cathode.

[0139] The multiple wiring sections 12A1 include a first wiring section 12A11, a third wiring section 12A13, and a fourth wiring section 12A14. The housing 10 may also have a second wiring section 12A12. With respect to the other connection configurations, the positions of the first wiring section 12A11 to the fourth wiring section 12A14 are further standardized; however, from the standpoint of technical standardization, the wiring sections 12A1, with the exception of the first wiring section 12A11, can also be considered as first wiring sections.

[0140] If, for example, the wiring line 60 connected to the first semiconductor laser element 20A and the wiring line 60 connected to the submount 30 on which the first semiconductor laser element 20A is arranged are to be standardized with the second connection configuration, then the third wiring section 12A13 and the fourth wiring section 12A14 in the third connection configuration each correspond to the first wiring section 12A11 and the second wiring section 12A12 of the second connection configuration. Thus, if the first wiring section 12A11 in the third connection configuration is considered the third wiring section, the third wiring section 12A13 the first wiring section, and the fourth wiring section 12A14 the second wiring section, then common technical elements between it and the second connection configuration can be determined.The same applies if the first inner surface 11E1 and the second inner surface 11E2 are reversed. Therefore, content described in the second connection configuration that also applies to the third connection configuration is not described again.

[0141] In the third connection configuration, the semiconductor laser element 201 is not electrically connected to the wiring section 12A1 provided on the side of the first inner surface 11E1.

[0142] In the third connection configuration, the semiconductor laser elements 202, 203, 204 are not electrically connected to the third wiring section 12A13.

[0143] In the third connection configuration, the multiple wiring leads include a fourth wiring lead 64, which is connected to the fourth wiring section 12A14 and electrically connected to the second semiconductor laser element 20B. The multiple wiring leads 60 also do not include a wiring lead 60 that is electrically connected to a first semiconductor laser element 20A and a second semiconductor laser element 20B, which are arranged adjacent to each other.

[0144] The third connection configuration differs from the other connection configurations in that the fourth wiring section 12A14 is not only a wiring section 12A1 to which a wiring line 60 is connected that is electrically connected to the first semiconductor laser element 20A and is not electrically connected to the second semiconductor laser element 20B, but is also used as a wiring section 12A1 to which a wiring line 60 is connected that is electrically connected to the second semiconductor laser element 20B and is not electrically connected to the first semiconductor laser element 20A.

[0145] In the third connection configuration, one or more second semiconductor laser elements 20B can be controlled via a second current path, in which the first wiring section 12A11 is the anode and the fourth wiring section 12A14 is the cathode. Furthermore, the multiple wiring lines 60 do not include a wiring line 60 that is connected to both the one or more first semiconductor laser elements 20A and the one or more second semiconductor laser elements 20B.

[0146] In the third connection configuration, one or more first semiconductor laser elements 20A are arranged between two second semiconductor laser elements 20B. The multiple wiring lines 60 include a fifth wiring line 65, which electrically connects two second semiconductor laser elements 20B (semiconductor laser elements 203 and 204), between which a semiconductor laser element 201 is located.

[0147] The individual embodiments of the present invention have been described above; however, the lighting device 1 according to the present invention is not strictly limited to the lighting device 1 of the individual embodiments. It is not impossible to implement the present invention without limiting it to the external shape or structure of the lighting device 1 disclosed in the individual embodiments. The present invention can be applied without necessarily including all constituent parts. For example, if a part of the constituent parts of the lighting device 1 disclosed by the embodiments is not specified in the claims, this is considered a concession to the freedom of interpretation of the person skilled in the art with regard to the replacement, omission, modification of shape, change of material, etc., of this part of the constituent parts, and the invention set forth in the claims is to be applied with this understanding.

[0148] The following technical points are revealed by the content described up to this point in the present description. (Point 1)

[0149] A lighting device comprises one or more first semiconductor laser elements, one or more second semiconductor laser elements, a support on which one or more first semiconductor laser elements and one or more second semiconductor laser elements are arranged, several wiring sections provided on the carrier, and several wiring leads that electrically connect the one or more first semiconductor laser elements and the one or more second semiconductor laser elements to the multiple wiring sections, wherein one or more first semiconductor laser elements and one or more second semiconductor laser elements emit light of the same color, wherein the number of one or more second semiconductor laser elements arranged on the carrier is at least one greater than the number of one or more first semiconductor laser elements arranged on the carrier, wherein a first current path, which drives only the one or more first semiconductor laser elements from the one or more first semiconductor laser elements and the one or more second semiconductor laser elements, is provided by means of the multiple wiring sections and the multiple wiring lines, a second current path that drives only the one or more second semiconductor laser elements from the one or more first semiconductor laser elements and the one or more second semiconductor laser elements, and a third current path is provided, which drives the one or more first semiconductor laser elements and the one or more second semiconductor laser elements. (Point 2)

[0150] The lighting device of point 1, wherein the carrier a first inner surface, one of the first inner surfaces in a first direction opposite a second inner surface and has an upper surface that, when viewed from above, is provided between the first inner surface and the second inner surface, wherein the multiple wiring sections include a first wiring section provided on the side of the first inner surface, a second wiring section provided on the side of the first inner surface, a third wiring section provided on the side of the second inner surface and include a fourth wiring section provided on the side of the second inner surface, where the multiple wiring lines a first wiring line that is connected to the first wiring section and electrically connected to the first semiconductor laser element, a second wiring line, which is connected to the second wiring section and electrically connected to the first semiconductor laser element, a third wiring line, which is connected to the third wiring section and is electrically connected to the second semiconductor laser element, and a fourth wiring line, which is connected to the fourth wiring section and is electrically connected to the second semiconductor laser element. (Point 3)

[0151] The lighting device of point 1, wherein the carrier has a first inner surface, a second inner surface opposite the first inner surface in a first direction and has an upper surface that, when viewed from above, is provided between the first inner surface and the second inner surface, wherein the multiple wiring sections include a first wiring section provided on the side of the first inner surface, a second wiring section provided on the side of the first inner surface and include a third wiring section provided on the side of the second inner surface, where the multiple wiring lines a first wiring line that is connected to the first wiring section and electrically connected to the first semiconductor laser element, a second wiring line connected to the second wiring section and electrically connected to the first semiconductor laser element, and a third wiring line connected to the third wiring section and electrically connected to the first semiconductor laser element or the second semiconductor laser element. (Point 4)

[0152] The lighting device of point 2 or 3, wherein the multiple wiring leads do not include a wiring lead that is connected to both the one or more first semiconductor laser elements and the one or more second semiconductor laser elements, wherein one or more first semiconductor laser elements and one or the several second semiconductor laser elements are arranged next to each other in the first direction. (Point 5)

[0153] The lighting device of point 3, wherein the third wiring line is electrically connected to the first semiconductor laser element and the second semiconductor laser element, wherein the one or more first semiconductor laser elements and the one or more second semiconductor laser elements are arranged next to each other in the first direction. (Point 6)

[0154] The lighting device of point 2 or 3, wherein the one or more second semiconductor laser elements are formed by at least two second semiconductor laser elements and connected in series. (Point 7)

[0155] The illuminating device of point 2 or 3, wherein the one or more first semiconductor laser elements are arranged at a position which is a distance in the first direction from the one or more second semiconductor laser elements. (Point 8)

[0156] The lighting device of point 2 or 3, wherein one or more second semiconductor laser elements are formed by at least two second semiconductor laser elements, wherein one or more first semiconductor laser elements are arranged between two second semiconductor laser elements. Commercial applicability

[0157] The lighting device 1 described in the embodiments can be used for a projector. A projector can therefore be considered one application to which the present invention can be applied. However, the present invention is not limited to this and can be used in various applications, including, but not limited to, lighting, illumination, vehicle headlights, head-mounted displays, and backlighting of other displays. [List of reference symbols] 1 Lighting device 10 cases 11 carriers 11A first upper surface 11B lower surface 11C second upper surface 11D outer surface 11E Inner surface 11E1 first inner surface 11E2 second inner surface 11F Step section 11F1 first stage section 11F2 second stage section 11G upper surface 11H side surface 11M base section 11N Frame section 12A, 12A1, 12A2 wiring section 12A11 first wiring section 12A12 second wiring section 12A13 third wiring section 12A14 fourth wiring section 13A Connection Pattern 14 lid bodies 14A upper surface 14B lower surface 14C side surface 20 semiconductor laser elements 20A first semiconductor laser element 20B second semiconductor laser element 21A upper surface 21B lower surface 21C Side surface 22 Light emission area 30 Submount 31A upper surface 31B lower surface 31C Side surface 32A circuit board 32B upper metal element 32C lower metal element 33 Wiring layer 40 reflective elements 41A lower surface 41B Light reflection surface 50 protective elements 51A upper surface 51B lower surface 51C Side surface 60 Wiring 61 First wiring 62 second wiring 63 third wiring 64 fourth wiring 70 optical element (lens element) 71A upper surface 71B lower surface 71C Side surface 71D lens area (optically effective area) 72A Lens section 72B Non-lens section QUOTES INCLUDED IN THE DESCRIPTION

[0000] This list of documents cited by the applicant was automatically generated and is included solely for the reader's convenience. The list is not part of the German patent or utility model application. The DPMA accepts no liability for any errors or omissions. Cited patent literature

[0000] JP 2023-093575 A

[0003]

Claims

[1] Lighting device comprising one or more first semiconductor laser elements, one or more second semiconductor laser elements, a support on which one or more first semiconductor laser elements and one or more second semiconductor laser elements are arranged, several wiring sections provided on the carrier, and several wiring leads that electrically connect the one or more first semiconductor laser elements and the one or more second semiconductor laser elements to the multiple wiring sections, wherein one or more first semiconductor laser elements and one or more second semiconductor laser elements emit light of the same color, wherein the number of one or more second semiconductor laser elements arranged on the carrier is at least one greater than the number of one or more first semiconductor laser elements arranged on the carrier, wherein a first current path, which drives only the one or more first semiconductor laser elements from the one or more first semiconductor laser elements and the one or more second semiconductor laser elements, is provided by means of the multiple wiring sections and the multiple wiring lines, and a second current path is provided, which drives only the one or more second semiconductor laser elements from the one or more first semiconductor laser elements and the one or more second semiconductor laser elements. [2] Lighting device according to claim 1, wherein the carrier has a first inner surface, a second inner surface opposite the first inner surface in a first direction and a top surface, which, viewed from above, is provided between the first inner surface and the second inner surface, where the several wiring sections a first wiring section provided on the side of the first inner surface, a second wiring section provided on the side of the first inner surface, a third wiring section provided on the side of the second inner surface and include a fourth wiring section provided on the side of the second inner surface, including the multiple wiring lines a first wiring line that is connected to the first wiring section and electrically connected to the first semiconductor laser element, a second wiring line, which is connected to the second wiring section and electrically connected to the first semiconductor laser element, a third wiring line, which is connected to the third wiring section and is electrically connected to the second semiconductor laser element, and a fourth wiring line, which is connected to the fourth wiring section and is electrically connected to the second semiconductor laser element. [3] Lighting device according to claim 1, wherein the carrier a first inner surface, one of the first inner surfaces in a first direction opposite a second inner surface and a top surface, which, viewed from above, is provided between the first inner surface and the second inner surface, where the several wiring sections a first wiring section provided on the side of the first inner surface, a second wiring section provided on the side of the first inner surface and include a third wiring section provided on the side of the second inner surface, including the multiple wiring lines a first wiring line that is connected to the first wiring section and electrically connected to the first semiconductor laser element, a second wiring line, which is connected to the second wiring section and is electrically connected to the first semiconductor laser element, and a third wiring line that is connected to the third wiring section and electrically connected to the second semiconductor laser element. [4] Lighting device according to claim 2 or 3, wherein the multiple wiring leads do not include a wiring lead that is connected to both the one or more first semiconductor laser elements and the one or more second semiconductor laser elements, wherein the one or more first semiconductor laser elements and the one or more second semiconductor laser elements are arranged next to each other in the first direction. [5] Lighting device according to claim 3, wherein the third wiring line is electrically connected to the first semiconductor laser element and the second semiconductor laser element, wherein the one or more first semiconductor laser elements and the one or more second semiconductor laser elements are arranged next to each other in the first direction. [6] Lighting device according to claim 2 or 3, wherein the one or more second semiconductor laser elements are formed by at least two second semiconductor laser elements and connected in series. [7] Lighting device according to claim 2 or 3, wherein the one or more first semiconductor laser elements are arranged at a position which is a distance in the first direction from the one or more second semiconductor laser elements. [8] Lighting device according to claim 2 or 3, wherein the one or more second semiconductor laser elements are formed by at least two second semiconductor laser elements, wherein the one or more first semiconductor laser elements are arranged between two second semiconductor laser elements.

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