STORAGE DEVICES WITH MULTIPLE ACCESS LINE FORMING A SINGLE ACCESS LINE AND MANUFACTURING METHOD

Abstract

A storage device comprises multiple memory cells, each of which includes a resistor and a transistor connected in series between a first access line and a second access line. The first access line has at least one metal track arranged in a first of several metallization layers above a substrate, and a second metal track arranged in a second of the several metallization layers. The second access line has at least one third metal track arranged in a third of the several metallization layers, and a fourth metal track arranged in a fourth of the several metallization layers.The second metallization layer is arranged above the fourth metallization layer, the fourth metallization layer is arranged above the third metallization layer, and the third metallization layer is arranged above the first metallization layer.