Organic compound and light-emitting device

Abstract

A novel organic compound and a light-emitting device using the organic compound are provided. The organic compound is represented by the general formula (G1). In the general formula (G1), Ar1 represents any one of the general formulas (g1-1) to (g1-3). R1 ​​to R8 each independently represent hydrogen, an alkyl group with 1 to 6 carbon atoms, a cycloalkyl group with 3 to 10 carbon atoms, an alkoxy group with 1 to 6 carbon atoms, a substituted or substituted aryl group with 6 to 15 carbon atoms, or a substituted or unsubstituted heteroaryl group with 1 to 30 carbon atoms. Any one of R1 to R4 represents the general formula (g2-1) or (g2-2) below.Ar2 and Ar3 each independently represent a substituted or unsubstituted aryl group with 6 to 60 carbon atoms or a substituted or unsubstituted heteroaryl group with 1 to 60 carbon atoms.

Description

Background of the invention 1. Field of the invention One embodiment of the present invention relates to an organic compound, an organic semiconductor element, a light-emitting device, a photodiode sensor, a display module, a lighting module, a display device, an electronic device, a lighting device, and an electronic device. It should be noted that one embodiment of the present invention is not limited to the foregoing technical field. The technical field of one embodiment of the invention disclosed in this description and the like relates to an object, a process, or a manufacturing process. One embodiment of the present invention relates to a process, a machine, a product, or a composition.Therefore, specific examples for the technical field of an embodiment of the present invention disclosed in this description include a semiconductor device, a display device, a liquid crystal display device, a lighting device, an energy storage device, a storage device, an imaging device, an operating method therefor, and a manufacturing method therefor. 2. Description of the state of the art A light-emitting device (also known as an organic EL element) containing an organic compound, which is a light-emitting substance, between a pair of electrodes, exhibits properties such as thinness, light weight, high response speed, and low-voltage operation. Therefore, displays incorporating such light-emitting devices have been developed. Since a continuous light-emitting layer can be designed two-dimensionally for such light-emitting devices, planar light emission can be obtained. It is difficult to achieve this feature with point light sources, such as incandescent lamps and LEDs, or linear light sources, such as fluorescent lamps; therefore, these light-emitting devices also have great potential as planar light sources that can be used for lighting devices and the like. For example, a functional panel is known in which a pixel provided in a display area comprises a light-emitting element (a light-emitting device) and a photoelectric conversion element (a light-receiving device) (Patent Document 1). Although, as described above, displays or lighting devices comprising light-emitting devices can be used appropriately for various electronic devices, their performance and cost competitiveness have considerable room for improvement. Therefore, a material with superior properties, easier handling, and a simple method for synthesizing the material are required. Although the properties of organic EL devices have improved considerably, higher requirements for various properties, including efficiency and durability, have not yet been met. To address a problem such as burn-in, which still remains a distinct issue for ELs, it is particularly desirable to prevent a reduction in efficiency due to deterioration as much as possible. The deterioration depends significantly on an emission center substance and surrounding materials; therefore, organic compound materials with advantageous properties have been actively developed. Instead of an evaporation process using a metal mask, the structuring of a layer formed from an organic compound is explored using a photolithography process with a photoresist or the like, in order to obtain a higher-resolution light-emitting device for which an organic EL device is used. Using the photolithography process, a high-resolution display device can be obtained where the distance between EL layers is a few micrometers (see, for example, patent document 2). [Reference] [Patent documents] [Patent Document 1] International PCT Publication No. WO2020 / 152556 .[Patent Document 2] Japanese translation of International PCT Application No. 2018-521459 Summary of the invention One object of an embodiment of the present invention is to provide a new organic compound. Another object of an embodiment of the present invention is to provide a method for synthesizing a novel organic compound. Another object of an embodiment of the present invention is to provide an organic compound that can be used for a light-emitting device. Another object of an embodiment of the present invention is to provide an organic compound that can be used for a light-receiving device. Another object of an embodiment of the present invention is to provide a light-emitting device with high emission efficiency. Another object of an embodiment of the present invention is to provide a light-emitting device with high color purity.Another object of an embodiment of the present invention is to provide a light-emitting device with high reliability. Another object of an embodiment of the present invention is to provide a display device with low power consumption, an electronic device with low power consumption, or a lighting device with low power consumption. Another object of an embodiment of the present invention is to provide a very reliable display device, a very reliable electronic device, or a very reliable lighting device. Another object of an embodiment of the present invention is to provide a display device with high color purity, an electronic device with high color purity, or a lighting device with high color purity. With the present invention, it is acceptable that at least one of the problems described above is fulfilled. One embodiment of the present invention is an organic compound represented by the general formula (G1). In the general formula (G1), Ar1 represents any one of the general formulas (g1-1) to (g1-3) below, and R1 to R8 each independently represent hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, a cycloalkyl group with 3 to 10 carbon atoms, an alkoxy group with 1 to 6 carbon atoms, a substituted or unsubstituted aryl group with 6 to 15 carbon atoms, or a substituted or unsubstituted heteroaryl group with 1 to 30 carbon atoms. Any one of R1 to R4 represents the general formula (g2-1) or the general formula (g2-2) below. Furthermore, n is greater than or equal to 0 and less than or equal to 3. In the case where n is greater than or equal to 2, R5 can be the same or different from each other, and the same applies to R6, R7, and R8.Ar2 and Ar3 each independently represent a substituted or unsubstituted aryl group with 6 to 60 carbon atoms or a substituted or unsubstituted heteroaryl group with 1 to 60 carbon atoms. In the general formulas (g1-1) to (g1-3), R111 to R120, R211 to R220, and R311 to R320 each independently represent hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, a cycloalkyl group with 3 to 10 carbon atoms, an alkoxy group with 1 to 6 carbon atoms, a substituted or unsubstituted aryl group with 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group with 1 to 30 carbon atoms. Any one of R111 to R120, any one of R211 to R220, and any one of R311 to R320 each form a bond with the general formula (G1). In general formulas (g2-1) and (g2-2), R121 to R128 and R221 to R228 each independently represent hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, an alkoxy group with 1 to 6 carbon atoms, a substituted or unsubstituted aryl group with 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group with 1 to 30 carbon atoms. An asterisk (*) and any one of R221 to R228 represent a bond with general formula (G1). Ar21 represents a substituted or unsubstituted aryl group with 6 to 60 carbon atoms or a substituted or unsubstituted heteroaryl group with 1 to 60 carbon atoms. One embodiment of the present invention is an organic compound represented by the general formula (G2). In general formula (G2), Ar1 represents any one of the above general formulas (g1-1) to (g1-3), and R1 to R8 each independently represent hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, a cycloalkyl group with 3 to 10 carbon atoms, an alkoxy group with 1 to 6 carbon atoms, a substituted or unsubstituted aryl group with 6 to 15 carbon atoms, or a heteroaryl group with 1 to 30 carbon atoms. Any one of R1 to R4 represents the above general formula (g2-1) or the above general formula (g2-2). Furthermore, n is greater than or equal to 0 and less than or equal to 3. Ar2 and Ar3 each independently represent a substituted or unsubstituted aryl group with 6 to 60 carbon atoms or a substituted or unsubstituted Heteroaryl group with 1 to 60 carbon atoms. In general formula (G2), Ar1 represents any one of the above general formulas (g1-1) to (g1-3), and R1 to R8 each independently represent hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, a cycloalkyl group with 3 to 10 carbon atoms, an alkoxy group with 1 to 6 carbon atoms, a substituted or unsubstituted aryl group with 6 to 15 carbon atoms, or a heteroaryl group with 1 to 30 carbon atoms. R2 represents the above general formula (g2-1) or the above general formula (g2-2). Furthermore, n is greater than or equal to 0 and less than or equal to 3. Ar2 and Ar3 each independently represent a substituted or unsubstituted aryl group with 6 to 60 carbon atoms or a substituted or unsubstituted heteroaryl group with 1 to 60 carbon atoms. In the above general formula (G1) or the above general formula (G2), n is 1. One embodiment of the present invention is an organic compound represented by the general formula (G3). In general formula (G3), Ar1 represents any one of the preceding general formulas (g1-1) to (g1-3), and R1 to R8 and R30 to R39 each independently represent hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, a cycloalkyl group with 3 to 10 carbon atoms, an alkoxy group with 1 to 6 carbon atoms, or a substituted or unsubstituted aryl group with 6 to 15 carbon atoms. R2 represents either general formula (g2-1) or general formula (g2-3) below. In the case where R30 to R39 each represent a substituted aryl group with 6 to 15 carbon atoms, the aryl group with 6 to 15 carbon atoms is bonded to an adjacent aromatic ring to form a ring. In general formulas (g1-1) to (g1-3) and in general formulas (G3), R111 to R120, R211 to R220, and R311 to R320 each independently represent hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, a cycloalkyl group with 3 to 10 carbon atoms, an alkoxy group with 1 to 6 carbon atoms, a substituted or unsubstituted aryl group with 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group with 1 to 30 carbon atoms. Any one of R111, R112, R114, and R119, any one of R212, R214, and R215, and any one of R312, R314, and R315 each form a bond with general formula (G3). dar. In the general formulas (g2-1) and (g2-3), R121 to R128 and R321 to R328 each independently represent hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, an alkoxy group with 1 to 6 carbon atoms, or a substituted or unsubstituted aryl group with 6 to 30 carbon atoms. An asterisk (*) represents a bond with the general formula (G3). A21 represents a substituted or unsubstituted aryl group with 6 to 30 carbon atoms or a substituted or unsubstituted heteroaryl group with 1 to 30 carbon atoms. In the foregoing invention, at least one of R30 to R34 represents a substituted or unsubstituted phenyl group, and at least one of R35 to R39 represents a substituted or unsubstituted phenyl group. One embodiment of the present invention is an organic compound represented by the general formula (G4). In general formula (G4), Ar1 represents any one of the general formulas (g1-1) to (g1-3) below, and R1 to R8 and R30 to R49 each independently represent hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, a cycloalkyl group with 3 to 10 carbon atoms, an alkoxy group with 1 to 6 carbon atoms, or a substituted or unsubstituted aryl group with 6 to 15 carbon atoms. R2 represents either general formula (g2-1) or general formula (g2-3) below. In general formulas (g1-1) to (g1-3) and in general formulas (G4), R111 to R120, R211 to R220, and R311 to R320 each independently represent hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, a cycloalkyl group with 3 to 10 carbon atoms, an alkoxy group with 1 to 6 carbon atoms, a substituted or unsubstituted aryl group with 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group with 1 to 30 carbon atoms. Any one of R111, R112, R114, and R119, any one of R212, R214, and R215, and any one of R312, R314, and R315 each form a bond with general formula (G4). dar. In general formula (g2-1) and general formula (g2-3) in general formula (G4), R121 to R128 and R321 to R328 each independently represent hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, an alkoxy group with 1 to 6 carbon atoms, or a substituted or unsubstituted aryl group with 6 to 30 carbon atoms. An asterisk (*) represents a bond with general formula (G4). Ar21 represents a substituted or unsubstituted aryl group with 6 to 30 carbon atoms or a substituted or unsubstituted heteroaryl group with 1 to 30 carbon atoms. One embodiment of the present invention is an organic compound represented by the general formula (G5). In general formula (G5), Ar1 represents any one of the general formulas (g1-1) to (g1-3) below, and R1 to R8 and R30 to R51 each independently represent hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, a cycloalkyl group with 3 to 10 carbon atoms, an alkoxy group with 1 to 6 carbon atoms, or a substituted or unsubstituted aryl group with 6 to 15 carbon atoms. In the case where R50 and R51 are each a substituted or unsubstituted aryl group with 6 to 15 carbon atoms, R50 and R51 may be bonded together to form a ring. R2 represents either general formula (g2-1) or general formula (g2-3) below. In general formulas (g1-1) to (g1-3) and in general formulas (G5), R111 to R120, R211 to R220, and R311 to R320 each independently represent hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, a cycloalkyl group with 3 to 10 carbon atoms, an alkoxy group with 1 to 6 carbon atoms, a substituted or unsubstituted aryl group with 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group with 1 to 30 carbon atoms. Any one of R111, R112, R114, and R119, any one of R212, R214, and R215, and any one of R312, R314, and R315 each form a bond with general formula (G5). dar. In general formulas (g2-1) and (g2-3) of general formula (G5), R121 to R128 and R321 to R328 each independently represent hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, an alkoxy group with 1 to 6 carbon atoms, or a substituted or unsubstituted aryl group with 6 to 30 carbon atoms. An asterisk (*) represents a bond with general formula (G5). Ar21 represents a substituted or unsubstituted aryl group with 6 to 30 carbon atoms or a substituted or unsubstituted heteroaryl group with 1 to 30 carbon atoms. In the foregoing invention, R114, R214 and R314 in the general formulas (g1-1) to (g1-3) each represent a bond with the general formula (G5). One embodiment of the present invention is an organic compound represented by the structural formula (100) or the structural formula (101). Another embodiment of the present invention is a light-emitting device or a light-receiving device comprising any of the organic compounds described above. Another embodiment of the present invention is a light-emitting device comprising one of the organic compounds described above. Another embodiment of the present invention is a display device comprising any of the light-emitting devices described above. Another embodiment of the present invention is an electronic device comprising any of the light-emitting devices described above, as well as a sensor, a control button, a loudspeaker or a microphone. Another embodiment of the present invention is a lighting device comprising any of the light-emitting devices described above and a housing. One embodiment of the present invention can provide a novel organic compound. Another embodiment of the present invention can provide a method for synthesizing a novel organic compound. Another embodiment of the present invention can provide an organic compound that can be used for a light-emitting device. Another embodiment of the present invention can provide an organic compound that can be used for a light-receiving device. Another embodiment of the present invention can provide a light-emitting device with high emission efficiency. Another embodiment of the present invention can provide a light-emitting device with high color purity. Another embodiment of the present invention can provide a light-emitting device with high reliability.Another embodiment of the present invention can provide a low-power display device, a low-power electronic device, or a low-power lighting device. Another embodiment of the present invention can provide a highly reliable display device, a highly reliable electronic device, or a highly reliable lighting device. Another embodiment of the present invention can provide a display device, an electronic device, or a lighting device with high color purity. The description of these effects does not preclude the existence of further effects. An embodiment of the present invention does not necessarily exhibit all of these effects. Further effects will become apparent from the explanation of the description, the drawings, the claims, and the like, and can be derived therefrom. Brief description of the drawings Figures 1A and 1B are schematic representations of a light-emitting device. Figures 2A to 2E depict structures of a light-emitting device. Figures 3A and 3B are a top view and a cross-sectional view, respectively, of a light-emitting device. Figures 4A to 4C each depict a light-receiving device of an embodiment of the present invention. Figures 5A to 5C each depict a light-emitting and light-receiving device of an embodiment of the present invention. Figures 6A and 6B each depict a light-emitting and light-receiving device of an embodiment of the present invention. Figures 7A to 7D depict a light-emitting and light-receiving device according to an embodiment. Figures 8A to 8F depict a light-emitting and light-receiving device and pixel arrangements according to an embodiment.Figures 9A to 9C represent pixel circuits according to one embodiment. Figure 10 represents a light-emitting and light-receiving device according to one embodiment. Figures 11A to 11E represent electronic devices according to one embodiment. Figures 12A to 12E represent electronic devices according to one embodiment. Figures 13A and 13B represent electronic devices according to one embodiment. Figure 14 shows a measurement result of a 1H NMR spectrum of an organic compound formed in an example. Figure 15 shows absorption and emission spectra of a toluene solution of an organic compound. Figure 16 shows absorption and emission spectra of a thin film of an organic compound. Figure 17 shows a measurement result of a 1H NMR spectrum of an organic compound formed in an example. Figure 18 shows absorption and emission spectra of a toluene solution of an organic compound.Figure 19 shows absorption and emission spectra of a thin film of an organic compound. Figure 20 shows the structure of a light-emitting device. Figure 21 shows luminance-current density properties of light-emitting devices. Figure 22 shows luminance-voltage properties of light-emitting devices. Figure 23 shows current-efficiency-luminance properties of light-emitting devices. Figure 24 shows current-density-voltage properties of light-emitting devices. Figure 25 shows electroluminescence spectra of light-emitting devices. Figure 26 shows changes in luminance over the operating time of light-emitting devices. Figure 27 shows luminance-current density properties of light-emitting devices. Figure 28 shows luminance-voltage properties of light-emitting devices. Figure 29 shows current-efficiency-luminance properties of light-emitting devices.Figure 30 shows current density-voltage characteristics of light-emitting devices. Figure 31 shows electroluminescence spectra of light-emitting devices. Figure 32 shows changes in luminance over the operating time of light-emitting devices. Figure 33 shows luminance-current density characteristics of light-emitting devices. Figure 34 shows luminance-voltage characteristics of light-emitting devices. Figure 35 shows current efficiency-luminance characteristics of light-emitting devices. Figure 36 shows current density-voltage characteristics of light-emitting devices. Figure 37 shows electroluminescence spectra of light-emitting devices. Figure 38 shows changes in luminance over the operating time of light-emitting devices. Figure 39 shows luminance-current density characteristics of light-emitting devices.Figure 40 shows luminance-voltage characteristics of light-emitting devices. Figure 41 shows current-efficiency-luminance characteristics of light-emitting devices. Figure 42 shows current-density-voltage characteristics of light-emitting devices. Figure 43 shows electroluminescence spectra of light-emitting devices. Figure 44 shows changes in luminance over the operating time of light-emitting devices. Figure 45 shows luminance-current-density characteristics of light-emitting devices. Figure 46 shows luminance-voltage characteristics of light-emitting devices. Figure 47 shows current-efficiency-luminance characteristics of light-emitting devices. Figure 48 shows current-density-voltage characteristics of light-emitting devices. Figure 49 shows electroluminescence spectra of light-emitting devices.Figure 50 shows changes in luminance over the operating time of light-emitting devices. Figure 51 shows luminance-current density characteristics of light-emitting devices. Figure 52 shows luminance-voltage characteristics of light-emitting devices. Figure 53 shows current efficiency-luminance characteristics of light-emitting devices. Figure 54 shows current density-voltage characteristics of light-emitting devices. Figure 55 shows electroluminescence spectra of light-emitting devices. Figure 56 shows changes in luminance over the operating time of light-emitting devices. Detailed description of the invention Embodiments of the present invention are described in detail below with reference to the drawings. It should be noted that the present invention is not limited to the following description, and that it is readily apparent to those skilled in the art that modes and details of the present invention can be modified in various ways without departing from the concept and scope of protection of the present invention. Therefore, the present invention should not be considered as limited to the description of the following embodiments. (Version 1) In this embodiment, organic compounds of an embodiment of the present invention are described. The organic compound of an embodiment of the present invention can be used for a functional layer of a light-emitting device and a light-receiving device. For example, the organic compound of an embodiment of the present invention can be suitable for use as a charge carrier transport layer of a light-emitting device and a light-receiving device. <Beispiele für die organische Verbindung> The organic compound of an embodiment of the present invention can be represented by the general formulas (G1) to (G5) below. <<Beispiel 1 für die organische Verbindung> > One embodiment of the present invention is an organic compound represented by the general formula (G1). In the general formula (G1), Ar1 represents any one of the general formulas (g1-1) to (g1-3) below, and R1 to R8 each independently represent hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, a cycloalkyl group with 3 to 10 carbon atoms, an alkoxy group with 1 to 6 carbon atoms, a substituted or unsubstituted aryl group with 6 to 15 carbon atoms, or a substituted or unsubstituted heteroaryl group with 1 to 30 carbon atoms. Any one of R1 to R4 represents the general formula (g2-1) or the general formula (g2-2) below. Furthermore, n is greater than or equal to 0 and less than or equal to 3. In the case where n is greater than or equal to 2, R5 can be the same or different from each other, and the same applies to R6, R7, and R8.Ar2 and Ar3 each independently represent a substituted or unsubstituted aryl group with 6 to 60 carbon atoms or a substituted or unsubstituted heteroaryl group with 1 to 60 carbon atoms. In the general formulas (g1-1) to (g1-3), R111 to R120, R211 to R220, and R311 to R320 each independently represent hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, a cycloalkyl group with 3 to 10 carbon atoms, an alkoxy group with 1 to 6 carbon atoms, a substituted or unsubstituted aryl group with 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group with 1 to 30 carbon atoms. Any one of R111 to R120, any one of R211 to R220, and any one of R311 to R320 each form a bond with the general formula (G1). In the general formulas (g2-1) and (g2-2), R121 to R128 and R221 to R228 each independently represent hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, an alkoxy group with 1 to 6 carbon atoms, a substituted or unsubstituted aryl group with 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group with 1 to 30 carbon atoms. An asterisk (*) and any one of R221 to R228 represent a bond with the general formula (G1). Ar21 represents a substituted or unsubstituted aryl group with 6 to 30 carbon atoms or a substituted or unsubstituted heteroaryl group with 1 to 60 carbon atoms. The organic compound represented by the general formula (G1) is an organic EL material exhibiting high hole transport properties, high heat resistance, and high reliability when used in a device. Using the organic compound of an embodiment of the present invention, a light-emitting device or a light-receiving device with high reliability and low power consumption can be provided. <<Beispiel 2 für die organische Verbindung> > Another embodiment of the present invention is an organic compound represented by the general formula (G2). In general formula (G2), Ar1 represents any one of the general formulas (g1-1) to (g1-3) below, and R1 to R8 each independently represent hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, a cycloalkyl group with 3 to 10 carbon atoms, an alkoxy group with 1 to 6 carbon atoms, a substituted or unsubstituted aryl group with 6 to 15 carbon atoms, or a heteroaryl group with 1 to 30 carbon atoms. Any one of R1 to R4 represents the general formula (g2-1) above or the general formula (g2-2) above. Furthermore, n is greater than or equal to 0 and less than or equal to 3. Ar2 and Ar3 each independently represent a substituted or unsubstituted aryl group with 6 to 60 carbon atoms or a substituted or unsubstituted Heteroaryl group with 1 to 60 carbon atoms. In the organic compound represented by the general formula (G2), a phenyl group can cover a section with Ar1 bonded at the para position, and it is assumed that this section degrades slightly, thereby improving reliability. The ease of degradation is due to the para-directing effect of an amino group, which increases the reactivity of hydrogen (or deuterium) at the para position and easily cleaves a hydrogen-carbon bond (making the reactivity of hydrogen (or deuterium) highest). When benzonaphthofuran (Ar1) with a stable structure is bonded to the highly reactive amino group at the para position, the stability of the organic compound can be improved in a charge carrier receiving state or an excited state.Furthermore, bonding at the para position results in a rigid structure, thereby improving heat resistance and charge carrier mobility. With a substituent represented by the above general formula (g2-1) or the above general formula (g2-2), which is a carbazole framework, the compound can exhibit high hole mobility. In particular, the substituent represented by the above general formula (g2-1) or the above general formula (g2-2) is preferably R2 (or R3). Furthermore, if the substituent represented by the above general formula (g2-1) or the above general formula (g2-2) is bonded to carbon adjacent to the carbon to which Ar1 is bonded, the molecular structure becomes sterically bulky, which can prevent crystallization and allows the formation of a stable film. Therefore, the organic compound of an embodiment of the present invention can be used in a thin-film state suitable for a light-emitting device and a light-receiving device.Furthermore, a device can be provided that is resistant to operation and environments at high temperatures. It should be noted that when n in the organic compounds represented by general formulas (G1) and (G2) is less than or equal to 2, the sublimation temperature is not too high and decomposition upon evaporation can be prevented. When n is greater than or equal to 2, the HOMO level is not too high, and high hole mobility can be achieved. When n is 1, the organic compound exhibits stable film quality and sublimation capability and can therefore be highly reliable. Furthermore, when n is 1, the HOMO level is suitable for use in a light-emitting device, which is preferable. <<Beispiel 3 für die organische Verbindung> > Another embodiment of the present invention is an organic compound represented by the general formula (G3). Ar1 represents any one of the general formulas (g1-1) to (g1-3) below, and R1 to R8 and R30 to R39 each independently represent hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, a cycloalkyl group with 3 to 10 carbon atoms, an alkoxy group with 1 to 6 carbon atoms, or a substituted or unsubstituted aryl group with 6 to 15 carbon atoms. R2 represents either the general formula (g2-1) or the general formula (g2-3) below. In the case where R30 to R39 each represent a substituted aryl group with 6 to 15 carbon atoms, the aryl group with 6 to 15 carbon atoms may be bonded to an adjacent aromatic ring to form a ring, and the ring formed may contain a substituent. The organic compound represented by general formula (G3) comprises an aryl group as both Ar2 and Ar3 of the organic compound represented by general formula (G2) and therefore readily exhibits a desired HOMO level suitable for the construction of the device. This makes it possible to provide a hole transport material suitable for a light-emitting device. In particular, at least one of R30 to R34 and at least one of R35 to R39 are each preferably a substituted or unsubstituted phenyl group. With this structure, the organic compound exhibits high hole transport properties and high stability in both an excitation state and a hole reception state. Therefore, the organic compound can exhibit high reliability. In the general formulas (g1-1) to (g1-3), R111 to R120, R211 to R220, and R311 to R320 each independently represent hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, a cycloalkyl group with 3 to 10 carbon atoms, an alkoxy group with 1 to 6 carbon atoms, a substituted or unsubstituted aryl group with 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group with 1 to 30 carbon atoms. Any one of R111, R112, R114, and R119, any one of R212, R214, and R215, and any one of R312, R314, and R315 each represent a bond with the general formula (G3). When R111, R112, R114, or R119 in general formula (g1-1) is bonded to the organic compound represented by general formula (G3), a compound with a desired LUMO level can be obtained; thus, a hole transport material with electron-blocking properties suitable for the device construction can be provided. The organic compound in which the bond with general formula (G3) is formed to R111, R112, R114, or R119 in general formula (g1-1) can be synthesized at a lower cost through fewer reactions (fewer synthesis steps) than an organic compound in which the bond with general formula (G3) is formed at a different position. The types and amounts of impurities increase with the number of synthesis steps.Consequently, a smaller number of synthesis steps enables a higher purity compound and higher yield production of a very reliable device. Similarly, when R212, R214, or R215 in general formula (g1-2) and R312, R314, or R315 in general formula (g1-3) are bonded to the organic compound represented by general formula (G3), a compound with a desired LUMO level can be obtained. The organic compound in which the bonds of general formula (G3) are formed at R212, R214, or R215 in general formula (g1-2) and R312, R314, or R315 in general formula (g1-3) can be synthesized by fewer reactions (fewer synthesis steps) than an organic compound in which the bonds of general formula (G3) are formed at other positions. Consequently, a highly purified organic compound can be provided, allowing for the fabrication of a very reliable apparatus with high yield. In the general formulas (g2-1) and (g2-3), R121 to R128 and R321 to R328 each independently represent hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, an alkoxy group with 1 to 6 carbon atoms, or a substituted or unsubstituted aryl group with 6 to 30 carbon atoms. An asterisk (*) represents a bond with the general formula (G3). A21 represents a substituted or unsubstituted aryl group with 6 to 30 carbon atoms or a substituted or unsubstituted heteroaryl group with 1 to 30 carbon atoms. <<Beispiel 4 für die organische Verbindung> > Another embodiment of the present invention is an organic compound represented by the general formula (G4). In general formula (G4), Ar1 represents any one of the general formulas (g1-1) to (g1-3), and R1 to R8 and R30 to R49 each independently represent hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, a cycloalkyl group with 3 to 10 carbon atoms, an alkoxy group with 1 to 6 carbon atoms, or a substituted or unsubstituted aryl group with 6 to 15 carbon atoms. R2 represents either general formula (g2-1) or general formula (g2-3) below. The organic compound represented by general formula (G4) contains a biphenyl group as both Ar2 and Ar3 of the organic compound represented by general formula (G2) and therefore exhibits high hole transport properties and high heat resistance. Furthermore, the organic compound represented by general formula (G4) has a molecular structure in which the para position of an aniline structure (the para position of an amino group) is substituted by a phenyl group, and it therefore exhibits high stability in both an excited and a hole-receiving state. In the general formulas (g1-1) to (g1-3), R111 to R120, R211 to R220, and R311 to R320 each independently represent hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, a cycloalkyl group with 3 to 10 carbon atoms, an alkoxy group with 1 to 6 carbon atoms, a substituted or unsubstituted aryl group with 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group with 1 to 30 carbon atoms. Any one of R111, R112, R114, and R119, any one of R212, R214, and R215, and any one of R312, R314, and R315 each form a bond with the general formula (G4). In the general formulas (g2-1) and (g2-3), R121 to R128 and R321 to R328 each independently represent hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, an alkoxy group with 1 to 6 carbon atoms, or a substituted or unsubstituted aryl group with 6 to 30 carbon atoms. The asterisk (*) represents a bond with the general formula (G4). Ar21 represents a substituted or unsubstituted aryl group with 6 to 30 carbon atoms or a substituted or unsubstituted heteroaryl group with 1 to 30 carbon atoms. <<Beispiel 5 für die organische Verbindung> > Another embodiment of the present invention is an organic compound represented by a general formula (G5). In general formula (G5), Ar1 represents any one of the general formulas (g1-1) to (g1-3), and R1 to R8 and R30 to R51 each independently represent hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, a cycloalkyl group with 3 to 10 carbon atoms, an alkoxy group with 1 to 6 carbon atoms, or a substituted or unsubstituted aryl group with 6 to 15 carbon atoms. In the case where R50 and R51 are each a substituted or unsubstituted aryl group with 6 to 15 carbon atoms, R50 and R51 may be bonded together to form a ring. R2 represents either general formula (g2-1) or general formula (g2-3) below. In the organic compound represented by general formula (G5), a ring is formed by a carbon atom bonded to R50 and R51 at positions R38 and R49 of the organic compound represented by general formula (G4), thereby forming a fluorene structure. Therefore, the organic compound represented by general formula (G5) has a fluorenylamine structure, which exhibits a higher HOMO level than a biphenylamine structure, and can thus possess high hole transport properties. This makes it possible to provide a hole transport material suitable for the construction of the device. In the general formulas (g1-1) to (g1-3), R111 to R120, R211 to R220, and R311 to R320 each independently represent hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, a cycloalkyl group with 3 to 10 carbon atoms, an alkoxy group with 1 to 6 carbon atoms, a substituted or unsubstituted aryl group with 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group with 1 to 30 carbon atoms. Any one of R111, R112, R114, and R119, any one of R212, R214, and R215, and any one of R312, R314, and R315 each represent a bond with the general formula (G5). In particular, R114, R214, and R314 in the above general formulas (g1-1) to (g1-3) preferably each represent a bond with the general formula (G5). With this structure, an organic compound with a desired LUMO level can be constructed, thus providing a hole transport material with electron-blocking properties suitable for the construction of the device. The organic compound in which the bonds with the general formula (G5) are formed at R111, R112, R114, or R119 in general formula (g1-1), R212, R214, or R215 in general formula (g1-2), and R312, R314, or R315 in general formula (g1-3) can be synthesized by fewer reactions (fewer synthesis steps) than an organic compound in which the bonds with the general formula (G5) are formed at other positions.Consequently, a highly purified organic compound can be provided, enabling the production of a very reliable device with low cost and high yield. In the general formulas (g2-1) and (g2-3), R121 to R128 and R321 to R328 each independently represent hydrogen (including deuterium), an alkyl group with 1 to 6 carbon atoms, an alkoxy group with 1 to 6 carbon atoms, or a substituted or unsubstituted aryl group with 6 to 30 carbon atoms. The asterisk (*) represents a bond with the general formula (G5). Ar21 represents a substituted or unsubstituted aryl group with 6 to 30 carbon atoms or a substituted or unsubstituted heteroaryl group with 1 to 30 carbon atoms. Specific examples of substituents represented by Ar2 and Ar3 in the general formulas (G1) and (G2), and a substituent represented by Ar21 in the general formula (g2-3), are shown below. The substituted or unsubstituted aryl group with 6 to 30 carbon atoms, the substituted or unsubstituted aryl group with 6 to 60 carbon atoms, the substituted or unsubstituted heteroaryl group with 1 to 30 carbon atoms, or the substituted or unsubstituted heteroaryl group with 1 to 60 carbon atoms is preferably represented by any one of (Ar-1) to (Ar-123). It should be noted that ∗ in (Ar-1) to (Ar-123) represents a bonding position. Specific examples of substituents represented by Rm(m is a given integer) in the general formulas (G1) to (G5), the general formulas (g1-1) to (g1-3) and the general formulas (g2-1) to (g2-3) are shown below. Examples of alkyl groups with 1 to 6 carbon atoms include a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a sec-butyl group, a tert-butyl group, a pentyl group, and a hexyl group. Examples of cycloalkyl groups with 3 to 10 carbon atoms include a cyclopropyl group, a cyclobutyl group, a methylcyclobutyl group, a cyclopentyl group, a methylcyclopentyl group, an isopropylcyclopentyl group, a tert-butylcyclopropyl group, a cyclohexyl group, a methylcyclohexyl group, an isopropylcyclohexyl group, a tert-butylcyclohexyl group, a cycloheptyl group, a methylcycloheptyl group, an isopropylcycloheptyl group, a cyclooctyl group, a methylcyclooctyl group, a cyclononyl group, a methylcyclononyl group, a cyclodecyl group, and an adamantyl group. Examples of the alkoxy group with 1 to 6 carbon atoms include a methoxy group, an ethoxy group, a propoxy group, an isopropoxy group, a tert-butoxy group, a sec-butoxy group, an isobutoxy group, a pentyloxy group, an octyloxy group, an allyloxy group, a cyclohexyloxy group, a phenoxy group, a benzyloxy group, a vinyloxy group, a propenyloxy group, a butenyloxy group, a pentenyloxy group, and a hexenyloxy group. Examples of the aryl group with 6 to 15 carbon atoms include a phenyl group, a biphenyl group, a naphthyl group, a fluorenyl group, and a 9,9-dimethylfluorenyl group. Examples of the heteroaryl group with 2 to 8 carbon atoms include a pyridinyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a triazinyl group, a quinolinyl group, a quinazolinyl group, an isoquinolinyl group, a pyrrolyl group, a naphthrydinyl group, a phenanthrolinyl group, a quinoxalinyl group, an imidazolyl group, a benzimidazolyl group, an oxazolyl group, an isoxazolyl group, a thiazolyl group, an isothiazolyl group, and a benzofuranyl group. In the case where the substituted or unsubstituted aryl group with 6 to 60 carbon atoms, the substituted or unsubstituted aryl group with 6 to 30 carbon atoms, the substituted or unsubstituted aryl group with 6 to 15 carbon atoms, the substituted or unsubstituted heteroaryl group with 1 to 60 carbon atoms, the substituted or unsubstituted heteroaryl group with 1 to 30 carbon atoms, and the substituted or unsubstituted heteroaryl group with 2 to 8 carbon atoms has a substituent, the substituent can be an alkyl group with 1 to 6 carbon atoms, a cycloalkyl group with 3 to 10 carbon atoms, a cyano group, or a hydroxyl group. Regarding the substituent bonded to the aryl or heteroaryl group, specific examples of alkyl groups with 1 to 6 carbon atoms include methyl, ethyl, propyl, isopropyl, butyl, isobutyl, tert-butyl, and n-hexyl groups. Specific examples of cycloalkyl groups with 3 to 10 carbon atoms include cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, and adamantyl groups. In the general formulas (G1) to (G5), (g1-1) to (g1-3) and (g2-1) to (g2-3), hydrogen can be replaced by deuterium as required. <Konkrete Beispiele> The following are specific examples of the organic compound of an embodiment of the present invention, which has the structure represented by any one of the general formulas (G1) to (G5). The organic compounds represented by the preceding structural formulas (100) to (213) are examples of the organic compound represented by any one of the general formulas (G1) to (G5). The organic compound of an embodiment of the present invention is not limited to these examples. <Syntheseverfahren der organischen Verbindung> The synthesis methods for the organic compound of an embodiment of the present invention are described using the synthesis schemes shown below. It should be noted that various reactions can be used in the synthesis methods for the organic compound of an embodiment of the present invention and are not limited to the following synthesis methods. Herein, a synthesis method for an organic compound represented by the general formula (G2-1) below is described, which is an example of the organic compound of an embodiment of the present invention. In the general formula (G2-1), n ​​represents 1. In this synthesis example, an organic compound of a further embodiment of the present invention, having any one of different substituents at Ar1, R1 to R8, Ar2, and Ar3, can also be synthesized by the same method if a raw material with substituents corresponding to Ar1, R1 to R8, Ar2, and Ar3 at the respective substitution sites is used. For Ar1 to Ar3 and R1 to R8 in the general formula (G2-1) and the synthesis schemes (s1-1) to (s1-5), (s2-1), (s2-2) and (s3-1) reference can be made to the descriptions in <<Beispiel 1 für die organische Verbindung> > and <<Beispiel 2 für die organische Verbindung> > are referred to. It should be noted that in the following synthesis procedures, the substituent R2 represents the general formula (g2-1) or the general formula (g2-2), which is described in <<Beispiel 1 für die organische Verbindung> > is described. Various reactions can be used in the synthesis of the organic compound represented by the general formula (G2-1). For example, the synthesis reactions described below enable the synthesis of the organic compound represented by the general formula (G2-1). <Syntheseverfahren 1 der durch die allgemeine Formel (G2-1) dargestellten organischen Verbindung> The organic compound of the present invention represented by the general formula (G2-1) can be synthesized by the synthesis schemes (s1-1) to (s1-5). First, the synthesis scheme (s1-1) is described. In particular, an aryl compound (compound 1) and a carbazole compound (compound 2) are coupled, yielding an aryl compound (compound 3). The synthesis scheme (s1-1) is shown below. Next, the synthesis scheme (s1-2) is described. In particular, the aryl compound (compound 3) and a benzonaphthofuran compound (compound 4) are coupled, yielding an arylamine compound (compound 5). The synthesis scheme (s1-2) is shown below. Next, the synthesis scheme (s1-3) is described. In particular, the arylamine compound (compound 5) and an aryl compound (compound 6) are coupled, yielding an aryl compound (compound 7). The synthesis scheme (s1-3) is shown below. Next, the synthesis scheme (s1-4) is described. In particular, the arylamine compound (compound 7) and an aryl compound (compound 8) are coupled, yielding an arylamine compound (compound 9). The synthesis scheme (s1-4) is shown below. Next, the synthesis scheme (s1-5) is described. In particular, the arylamine compound (compound 9) and an aryl compound (compound 10) are coupled, yielding the organic target compound represented by the general formula (G2-1). The synthesis scheme (s1-5) is shown below. <Syntheseverfahren 2 der durch die allgemeine Formel (G2-1) dargestellten organischen Verbindung> The organic compound of the present invention represented by the general formula (G2-1) can be synthesized by the synthesis schemes (s2-1) and (s2-2) below. First, the synthesis scheme (s2-1) is described. In particular, the arylamine compound (compound 7) and the aryl compound (compound 10) are coupled, yielding an arylamine compound (compound 11). The synthesis scheme (s2-1) is shown below. Next, the synthesis scheme (s2-2) is described. In particular, the arylamine compound (compound 11) and the aryl compound (compound 8) are coupled, yielding the organic target compound represented by the general formula (G2-1). The synthesis scheme (s2-2) is shown below. <Syntheseverfahren 3 der durch die allgemeine Formel (G2-1) dargestellten organischen Verbindung> The organic compound of the present invention represented by the general formula (G2-1) can be synthesized by the synthesis scheme (s3-1) below. The synthesis scheme (s3-1) is described. In particular, the arylamine compound (compound 5) and an aryl compound (compound 12) are coupled, yielding the organic target compound represented by the general formula (G2-1). The synthesis scheme (s3-1) is shown below. In the above synthesis schemes (s1-1) to (s1-5), (s2-1), (s2-2) and (s3-1), X1 to X10 each independently represent hydrogen (including deuterium), a halogen, a boronic acid group, an organoboron group, a triflate group (trifluoromethanesulfonic acid group, hereinafter referred to as the triflate group), an organotin group, an organozinc group, an amino group, a magnesium halide group or the like. In the case where amination is carried out by a nucleophilic substitution reaction in the synthesis scheme (s1-1), X1 represents a halogen, such as fluorine, chlorine, bromine or iodine, or a triflate group, and X4 represents hydrogen (including deuterium). In the case where X1 is a halogen in the reaction, either fluorine or chlorine is preferred, and fluorine is particularly preferred due to its higher reaction rate. Toluene, xylene, benzene, tetrahydrofuran, dimethylformamide, dimethylacetoamide, diethylacetoamide, dioxane, dimethyl sulfoxide, acetonitrile, diethylene glycol dimethyl ether, ethylene glycol monomethyl ether, or similar solvents can be used in the reaction. The reagents that can be used for the reaction are not limited to these. An inorganic base, such as potassium carbonate, cesium carbonate, sodium carbonate, or the like, can be used in the reaction. In the case where a coupling reaction to form a carbon-carbon bond is carried out in the synthesis scheme (s1-1), one of X1 and X4 represents a boronic acid group, an organoboron group, an organotin group, an organozinc group, or a magnesium halide group, and the other of X1 and X4 represents chlorine, bromine, iodine, or a triflate group. The same applies to the substituents represented by X1 and X4 for the combinations of X2 and X5, X3 and X6, X3 and X10, X7 and X8, and X7 and X9. In the reaction, the halogen is preferably chlorine, bromine or iodine; bromine or iodine is preferred with respect to reactivity, and chlorine or bromine is preferred with respect to cost. In synthesis schemes (s1-1) to (s1-3) and (s3-1), when a Suzuki-Miyaura coupling reaction is carried out using a palladium catalyst, X1 to X6 and X10 each represent a halogen group, a boronic acid group, an organoboron group, or a triflate group, and the halogen is preferably iodine, bromine, or chlorine. The reaction may involve a palladium compound, such as bis(dibenzylideneacetone)palladium(0), palladium(II) acetate, [1,1-bis(diphenylphosphino)ferrocene]palladium(II) dichloride, or tetrakis(triphenylphosphine)palladium(0), and a ligand, such as... B. Tri(t-butyl)phosphine, tri(n-hexyl)phosphine, tricyclohexylphosphine, di(1-adamantyl)-n-butylphosphine, 2-dicyclohexylphosphino-2',6'-dimethoxybiphenyl, or tri(ortho-tolyl)phosphine. An organic base, such as sodium tert-butoxide, an inorganic base, such as potassium carbonate, cesium carbonate, or sodium carbonate, or the like, can be used in the reaction. The following solvents can be used in the reaction: toluene, xylene, mesitylene, benzene, tetrahydrofuran, dioxane, ethanol, methanol, water, diethylene glycol dimethyl ether, ethylene glycol monomethyl ether, or the like. The reagents that can be used for the reaction are not limited to these. The reaction represented by the synthesis schemes (s1-1) to (s1-3) and (s3-1) can also involve a Migita-Kosugi-Stille coupling reaction using an organotin compound, a Kumada-Tamao-Corriu coupling reaction using a Grignard reagent, a Negishi coupling reaction using an organozinc compound, a reaction using copper or a copper compound, or the like. In synthesis schemes (s1-4), (s1-5), (s2-1) and (s2-2), X7 to X9 each represent a halogen, an amino group or the like, and the halogen is preferably iodine, bromine or chlorine. In the case where the Buchwald-Hartwig reaction is carried out using a palladium catalyst, a palladium compound, such as bis(dibenzylideneacetone)palladium(0), palladium(II) acetate, [1,1-bis(diphenylphosphino)ferrocene]palladium(II) dichloride, tetrakis(triphenylphosphine)palladium(0) or allylpalladium(II) chloride (dimer), and a ligand, such as... B. Tri(t-butyl)phosphine, tri(n-hexyl)phosphine, tricyclohexylphosphine, di(1-adamantyl)-n-butylphosphine, 2-dicyclohexylphosphino-2',6'-dimethoxybiphenyl, tri(ortho-tolyl)phosphine, or di-t-butyl(1-methyl-2,2-diphenylcyclopropyl)phosphine (abbreviation: cBRIDP (registered trademark)). An organic base, such as sodium tert-butoxide, or an inorganic base, such as... can be used in the reaction.Potassium carbonate, cesium carbonate, sodium carbonate, or the like may be used. Toluene, xylene, benzene, tetrahydrofuran, dioxane, or the like may be used as solvents in the reaction. In synthesis schemes (s1-4), (s1-5), (s2-1), and (s2-2), the Ullmann reaction can be employed using copper or a copper compound. Examples of the base to be used include an inorganic base such as potassium carbonate. Examples of the solvent that can be used in the reaction include 1,3-dimethyl-3,4,5,6-tetrahydro-2(1H)-pyrimidinone (DMPU), toluene, xylene, and benzene. In the Ullmann reaction, if the reaction temperature is higher than or equal to 100 °C, the target compound can be obtained in a shorter time and in higher yield; therefore, DMPU or xylene, which have a high boiling point, are preferably used. A reaction temperature higher than or equal to 150 °C is more preferred, and consequently, DMPU is more preferably used. The synthesis method of the organic compound of the present invention represented by the general formula (G2-1) is not limited to the synthesis schemes (s1-1) to (s1-5), (s2-1), (s2-2) and (s3-1). This embodiment can be freely combined with one of the other embodiments and examples. (Version 2) In this embodiment, structures of a light-emitting device are described in which the organic compound described in embodiment 1 is used. For a long time, displays (organic EL displays) that use organic EL elements (hereinafter also referred to as light-emitting devices) as display elements have been in practical use. These displays are typically provided with pixels that emit light in at least three colors of red, green, and blue to achieve a full-color display. The pixels are provided with light-emitting devices for their respective emission colors. In a display manufactured using a side-by-side process or a so-called separate color process, the light-emitting devices contain light-emitting substances that correspond to the respective emission colors of the pixels. The organic compound described in embodiment 1, which has an advantageous charge carrier transport property, in particular an excellent hole transport property, can be suitablely used for a host material or a charge carrier transport layer, in particular a hole transport layer or a hole injection layer, in a light-emitting device described in this embodiment and a light-receiving device described later. One embodiment of the present invention provides a light-emitting device in which the organic compound described in embodiment 1 is used as the hole transport material. <Strukturbeispiele der Licht emittierenden Vorrichtung> Fig. 1A is a schematic cross-sectional view of a light-emitting device 10 of an embodiment of the present invention. The light-emitting device 10 comprises a pair of electrodes (a first electrode 101 and a second electrode 102) and an organic compound layer 103 between the pair of electrodes. The organic compound layer 103 comprises at least one light-emitting layer 113. The organic compound layer 103 shown in Fig. 1A comprises, in addition to the light-emitting layer 113, functional layers such as a hole injection layer 111, a hole transport layer 112, an electron transport layer 114 and an electron injection layer 115. Although this embodiment is described assuming that the first electrode 101 and the second electrode 102 of the electrode pair serve as the anode and cathode, respectively, the structure of the light-emitting device 10 is not limited to this. That is to say, the first electrode 101 can be a cathode, the second electrode 102 can be an anode, and the arrangement order of the layers between the electrodes can be reversed. In other words, the hole injection layer 111, the hole transport layer 112, the light-emitting layer 113, the electron transport layer 114, and the electron injection layer 115 can be arranged in this order, starting from the anode side. The structure of the organic compound layer 103 is not limited to that shown in Fig. 1A, and a structure comprising at least one layer selected from the hole injection layer 111, the hole transport layer 112, the electron transport layer 114, and the electron injection layer 115 may be employed. Alternatively, the organic compound layer 103 may, for example, comprise a functional layer that has the function of lowering a hole or electron injection barrier, improving a hole or electron transport property, preventing a hole or electron transport property, or reducing electrode quenching. It should be noted that the functional layer may be either a single layer or a multilayer. Fig. 1B is a schematic cross-sectional view showing an example of the light-emitting layer 113 shown in Fig. 1A. The light-emitting layer 113 shown in Fig. 1B contains host materials 118 (an organic compound 118_1 and an organic compound 118_2) and a guest material 119 (a light-emitting substance). The guest material 119 can be a light-emitting organic compound, and the light-emitting organic compound is preferably a substance that can emit phosphorescent light (hereinafter also referred to as a phosphorescent compound). In the light-emitting layer 113, the host material 118 is present in the largest weight fraction, and the guest material 119 is dispersed in the host material 118. The lowest triplet excitation energy levels (T1 levels) of the host materials 118 (the organic compounds 118_1 and 118_2) in the light-emitting layer 113 are preferably higher than the T1 level of the guest material 119 in the light-emitting layer 113. The host materials 118 (the organic compounds 118_1 and 118_2) in the light-emitting layer 113 preferably form an exciplex. It should be noted that an exciplex is an excited state formed by two or more types of substances. Upon light excitation, the exciplex is formed by the interaction between a substance in an excited state and another substance in a ground state. <Grundlegende Struktur der Licht emittierenden Vorrichtung> The basic structures of the light-emitting device are described in detail below with reference to Figures 2A to 2E. Figure 2A shows a light-emitting device with a single structure (single structure) in which an organic compound layer (also called an EL layer), comprising a light-emitting layer, is provided between a pair of electrodes. In particular, the organic compound layer 103 is arranged between the first electrode 101 and the second electrode 102. Fig. 2B depicts a light-emitting device having a multilayer structure (tandem structure) in which a plurality of organic compound layers (two organic compound layers 103a and 103b in Fig. 2B) are provided between a pair of electrodes, and a charge-generating layer 106 is provided between the organic compound layers. A light-emitting device with the tandem structure enables the fabrication of a light-emitting device that exhibits high efficiency without changing the amount of current. The charge-generating layer 106 has a function for injecting electrons into one of the organic compound layers 103a and 103b and for injecting holes into the other of the organic compound layers 103a and 103b when a potential difference is created between the first electrode 101 and the second electrode 102. Therefore, the charge-generating layer 106 injects electrons into the organic compound layer 103a and holes into the organic compound layer 103b when a voltage is applied such that the potential of the first electrode 101 is higher than that of the second electrode 102, as shown in Fig. 2B. It should be noted that the charge-generating layer 106 preferably has a visible light transmittance property with respect to light extraction efficiency (in particular, the charge-generating layer 106 preferably has a visible light transmittance of 40% or higher). The charge-generating layer 106 functions even if it has a lower conductivity than the first electrode 101 and the second electrode 102. Fig. 2C shows a multilayer structure of the organic compound layer 103 in the light-emitting device of an embodiment of the present invention. In this case, the first electrode 101 is considered to serve as the anode and the second electrode 102 is considered to serve as the cathode. The organic compound layer 103 has a structure in which the hole injection layer 111, the hole transport layer 112, the light-emitting layer 113, the electron transport layer 114, and the electron injection layer 115 are arranged above the first electrode 101 in that order. It should be noted that the light-emitting layer 113 can have a multilayer structure consisting of a plurality of light-emitting layers that emit light of different colors.For example, a light-emitting layer containing a light-emitting substance that emits red light, a light-emitting layer containing a light-emitting substance that emits green light, and a light-emitting layer containing a light-emitting substance that emits blue light can be stacked on top of each other, with one or no layer containing a charge carrier transport material between them. Alternatively, a light-emitting layer containing a light-emitting substance that emits yellow light and a light-emitting layer containing a light-emitting substance that emits blue light can be used in combination. It should be noted that the multilayer structure of the light-emitting layer 113 is not limited to the above.For example, the light-emitting layer 113 can have a multilayer structure consisting of a plurality of light-emitting layers emitting light of the same color. For example, a first light-emitting layer containing a light-emitting substance that emits blue light and a second light-emitting layer containing a light-emitting substance that emits blue light can be stacked on top of each other, with one or no layer containing a charge carrier transport material between them. The structure in which a plurality of light-emitting layers emitting light of the same color are stacked on top of each other can, in some cases, achieve higher reliability than a single-layer structure. In the case where a plurality of light-emitting layers are stacked as in the one shown in Fig.In the tandem structure shown in Figure 2B, the layers in each light-emitting layer are arranged sequentially from the anode side, as described above. If the first electrode 101 is the cathode and the second electrode 102 is the anode, the order of the layers in the organic compound layer 103 is reversed. Specifically, layer 111 above the first electrode 101, which serves as the cathode, is an electron injection layer, layer 112 is an electron transport layer, layer 113 is a light-emitting layer, layer 114 is a hole transport layer, and layer 115 is a hole injection layer. The light-emitting layer 113, contained within the organic compound layers (103, 103a, and 103b), contains a suitable combination of a light-emitting substance and a variety of other substances, such that fluorescent or phosphorescent light of a desired color can be obtained. The light-emitting layer 113 can have a multilayered structure with different emission colors. In this case, the light-emitting substance and other substances are different between the stacked light-emitting layers. Alternatively, the variety of organic compound layers (103a and 103b) in Fig. 2B can each have their respective emission colors. Again, in this case, the light-emitting substance and other substances are different between the light-emitting layers. The light-emitting device of an embodiment of the present invention can have an optical microresonator (microcavity) structure, for example, if in Fig. 2C the first electrode 101 is a reflective electrode and the second electrode 102 is a transflective electrode. In this way, light from the light-emitting layer 113 in the organic compound layer 103 between the electrodes can be brought into resonance, and light emitted via the second electrode 102 can be amplified. Therefore, high resolution can be easily achieved. In addition, the emission intensity at a predetermined wavelength can be increased towards the front, thereby reducing power consumption. It should be noted that if the first electrode 101 of the light-emitting device is a reflective electrode having a multilayer structure consisting of a reflective conductive material and a translucent conductive material (a transparent conductive film), optical adjustment can be achieved by controlling the thickness of the transparent conductive film. In particular, if the wavelength of light received from the light-emitting layer 113 is λ, the optical path length between the first electrode 101 and the second electrode 102 (the product of the thickness and the refractive index) is preferably set to mλ / 2 (where m is an integer greater than or equal to 1) or a value close to mλ / 2. To amplify light of a desired wavelength (wavelength: λ) received from the light-emitting layer 113, the optical path length from the first electrode 101 to a region of the light-emitting layer 113 where the light of the desired wavelength is received (the light-emitting region), and the optical path length from the second electrode 102 to the region of the light-emitting layer 113 where the light of the desired wavelength is received (the light-emitting region), are each set to (2m'+1) λ / 4 (m' is an integer greater than or equal to 1) or a value close to (2m'+1) λ / 4. Here, the light-emitting region denotes a region of the light-emitting layer 113 where holes and electrons recombine. By such optical adjustment, the spectrum of specific monochromatic light obtained from the light-emitting layer 113 can be narrowed, and light emission with high color purity can be obtained. In the above case, the optical path length between the first electrode 101 and the second electrode 102 is more precisely the total thickness from a reflection region in the first electrode 101 to a reflection region in the second electrode 102. However, it is difficult to determine the reflection regions in the first electrode 101 and the second electrode 102 precisely; therefore, it is assumed that the above effect can be achieved sufficiently regardless of where the reflection regions in the first electrode 101 and the second electrode 102 are located.Furthermore, the optical path length between the first electrode 101 and the light-emitting layer emitting light at a desired wavelength is, more precisely, the optical path length between the reflection region in the first electrode 101 and the light-emitting region in the light-emitting layer emitting light at the desired wavelength. However, it is difficult to precisely determine the reflection region in the first electrode 101 and the light-emitting region in the light-emitting layer emitting light at the desired wavelength; therefore, it is assumed that the aforementioned effect can be achieved sufficiently regardless of the location of the reflection region and the light-emitting region in the first electrode 101 and the light-emitting layer emitting light at the desired wavelength, respectively. The light-emitting device shown in Fig. 2D is a tandem-structured light-emitting device. The tandem structure allows the device to emit light with high luminance. Furthermore, the amount of current required to achieve a predetermined luminance can be lower with the tandem structure than with a single-structure device; therefore, the tandem structure offers higher reliability. Additionally, power consumption can be reduced. The light-emitting device shown in Fig. 2E is an example of the light-emitting device with the tandem structure shown in Fig. 2B and comprises, as shown in Fig. 2E, three organic compound layers (103a, 103b, and 103c) positioned one above the other, with charge-generating layers (106a and 106b) located between them. The three organic compound layers (103a, 103b, and 103c) each comprise light-emitting layers (113a, 113b, and 113c), and the emission colors of the light-emitting layers can be freely selected.For example, light-emitting layer 113a can emit blue light, light-emitting layer 113b can emit red light, green light or yellow light and light-emitting layer 113c can emit blue light, or light-emitting layer 113a can emit red light, light-emitting layer 113b can emit blue light, green light or yellow light, and light-emitting layer 113c can emit red light. In the light-emitting device of an embodiment of the present invention, the first electrode 101 and / or the second electrode 102 are translucent electrodes (e.g., transparent electrodes or transflective electrodes). In the case of a transparent electrode, the transparent electrode has a visible light transmittance of 40% or higher. In the case of a translucent electrode, the transflective electrode has a visible light reflectance of 20% or higher and 80% or lower, preferably 40% or higher and 70% or lower. These electrodes preferably have a resistivity of 1 × 10⁻² Ω·cm or lower. If, in the light-emitting device of an embodiment of the present invention, the first electrode 101 or the second electrode 102 is a reflective electrode, the reflectance for visible light of the reflective electrode is greater than or equal to 40% and less than or equal to 100%, preferably greater than or equal to 70% and less than or equal to 100%. This electrode preferably has a resistivity of less than or equal to 1 × 10⁻² Ω·cm. <Konkrete Struktur der Licht emittierenden Vorrichtung> Next, a specific structure of the light-emitting device of an embodiment of the present invention will be described. The description is given here using Fig. 2D, which depicts the tandem structure. It should be noted that the structure of the organic compound layer also applies to the structure of the light-emitting devices with the single-layer structure shown in Fig. 2A and Fig. 2C. If the light-emitting device in Fig. 2D has a microcavity structure, the first electrode 101 is configured as a reflective electrode and the second electrode 102 is configured as a transflective electrode. Therefore, a single-layer or multi-layer structure can be configured using one or more types of desired electrode materials.It should be noted that the second electrode 102 is formed after the formation of the organic compound layer 103b, using a suitably selected material. <Materialien der Licht emittierenden Vorrichtung> <<Licht emittierende Schicht> > The light-emitting layers (113, 113a, and 113b) contain a light-emitting substance. It should be noted that the light-emitting substance that can be used in the light-emitting layers (113, 113a, and 113b) can be a substance whose emission color is blue, violet, blue-violet, green, yellow-green, yellow, orange, red, or the like. If a variety of light-emitting layers are provided, the use of different light-emitting substances in the light-emitting layers allows for the representation of different emission colors (e.g., white light emission obtained by a combination of complementary emission colors). Furthermore, a multilayer structure in which a light-emitting layer contains two or more types of light-emitting substances can be employed. The light-emitting layers (113, 113a and 113b) can each contain, in addition to a light-emitting substance (a guest material), one or more types of organic compounds (e.g. a host material). In particular, the light-emitting layer 113 can have the structure described with reference to Fig. 1B. In the light-emitting layer 113, the host materials 118 are present in the largest weight fraction, and the guest material 119 (the phosphorescent compound) is dispersed in the host materials 118. The T1 levels of the host materials 118 (the organic compounds 118_1 and 118_2) in the light-emitting layer 113 are preferably higher than the T1 level of the guest material (the guest material 119) in the light-emitting layer 113. The lowest triplet excitation energy level (T1 level) can be calculated from an emission edge using a thin film of a sample obtained by measuring an emission spectrum (phosphorescence spectrum) at a low temperature (e.g., 10 K). It should be noted that the emission spectrum of an emission center substance can be measured using a sample in the form of a thin film or a solution; however, a sample in the form of a solution is preferably used for investigating the state of an isolated molecule. A solvent with relatively low polarity, such as toluene or chloroform, is preferably used as the solvent for the solution. In the case where the emission center substance is a phosphorescent compound, the temperature at which the lowest triplet excitation energy level (T1 level) is measured can be a low temperature (e.g., 10 K) or room temperature (e.g., 10 °C).298 K), and the lowest triplet excitation energy level is calculated from an emission edge obtained by measuring an emission spectrum (phosphorescence spectrum). It should be noted that the emission edge can be determined as the intersection point of a tangent and the horizontal axis (representing the wavelength) or the baseline. The tangent is drawn at a point where the slope on a shorter wavelength side of the shortest-wavelength peak (or the shortest-wavelength shoulder peak) of the emission spectrum (phosphorescence spectrum) has its maximum absolute value. Examples of light-emitting substances that can be used as guest materials include red light-emitting substances. Furthermore, the red light-emitting substance is preferably a phosphorescent light-emitting substance, and particularly preferably a metal-organic complex. Examples of light-emitting substances include metal-organic iridium complexes with a pyrimidine framework, such as... B. (Diisobutyrylmethanato)bis[4,6-bis(3-methylphenyl)pyrimidinato]iridium(III) (abbreviation: [Ir(5mdppm)2(dibm)]), Bis[4,6-bis(3-methylphenyl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: [Ir(5mdppm)2(dpm)]) and Bis[4,6-di(naphthalen-1-yl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: [Ir(d1npm)2(dpm)]); organometallic iridium complexes with a pyrazine framework, such as(Acetylacetonato)bis(2,3,5-triphenylpyrazinato)iridium(III) (abbreviation: [Ir(tppr)2(acac)]), Bis(2,3,5-triphenylpyrazinato)(dipivaloylmethanato)iridium(III) (abbreviation: [Ir(tppr)2(dpm)]) and (Acetylacetonato)bis[2,3-bis(4-fluorophenyl)quinoxalinato]iridium(III) (abbreviation: [Ir(Fdpq)2(acac)]); organometallic iridium complexes with a pyridine skeleton, such as... B. Tris(1-phenylisoquinolinato-N,C2')iridium(III) (abbreviation: [Ir(piq)3]), Bis(1-phenylisoquinolinato-N,C2')iridium(III)acetylacetonate (abbreviation: [Ir(piq)2(acac)]), (3,7-Diethyl-4,6-nonandionato-κO4,κO6)bis[2,4-dimethyl-6-[7-(1-methylethyl)-1-isoquinolinyl-κN]phenyl-κC]iridium(III) and (3,7-Diethyl-4,6-nonandionato-κO4,κO6)bis[2,4-dimethyl-6-[5-(1-methylethyl)-2-quinolinyl-κN]phenyl-κC]iridium(III); a platinum complex, such as... B. 2,3,7,8,12,13,17,18-Octaethyl-21H,23H-porphyrinplatin(II) (abbreviation: PtOEP); and rare earth metal complexes, such asTris(1,3-diphenyl-1,3-propanedionato)(monophenanthroline)europium(III) (abbreviation: [Eu(DBM)3(Phen)]) and Tris[1-(2-thenoyl)-3,3,3-trifluoroacetonato](monophenanthroline)europium(III) (abbreviation: [Eu(TTA)3(Phen)]). These compounds exhibit an emission peak in the wavelength range of 600 nm to 700 nm. Furthermore, the organometallic iridium complexes with a pyrazine framework can provide red light emission with advantageous chromaticity. It should be noted that other known red phosphorescent substances can also be used. In the case where a light-emitting device does not use a red light-emitting substance as the light-emitting substance, or includes light-emitting devices with different structures, the light-emitting substance may be a fluorescent substance, a phosphorescent substance, a substance exhibiting thermally activated delayed fluorescence (TADF), or any other light-emitting substance. Examples of materials that can be used as light-emitting substances emitting fluorescent light in light-emitting layer 113 are as follows. Other fluorescent substances can also be used. The examples include 5,6-bis[4-(10-phenyl-9-anthryl)phenyl]-2,2'-bipyridine (abbreviation: PAP2BPy), 5,6-bis[4'-(10-phenyl-9-anthryl)biphenyl-4-yl]-2,2'-bipyridine (abbreviation: PAPP2BPy), N,N'-diphenyl-N,N'-bis[4-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6FLPAPrn), N,N'-bis(3-methylphenyl)-N,N'-bis[3-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6mMemFLPAPrn), N,N'-Bis[4-(9H-carbazol-9-yl)phenyl]-N,N'-diphenylstilbene-4,4'-diamine (abbreviation: YGA2S), 4-(9H-carbazol-9-yl)-4'-(10-phenyl-9-anthryl)triphenylamine (abbreviation: YGAPA), 4-(9H-carbazol-9-yl)-4'-(9,10-diphenyl-2-anthryl)triphenylamine (abbreviation: 2YGAPPA), N,9-Diphenyl-N-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine (abbreviation: PCAPA), Perylene, 2,5,8,11-Tetra-tert-butylperylene (abbreviation: TBP), 4-(10-Phenyl-9-anthryl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBAPA), N,N"-(2-tert-butylanthracene-9,10-diyldi-4,1-phenylene)bis(N,N',N'-triphenyl-1,4-phenylenediamine) (abbreviation: DPABPA), N,9-Diphenyl-N-[4-(9,10-diphenyl-2-anthryl)phenyl]-9H-carbazol-3-amine (abbreviation: 2PCAPPA), N-[4-(9,10-Diphenyl-2-anthryl)phenyl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPPA), N,N,N,N,N,N',N',N",N",N"-Octaphenyldibenzo[g,p]chrysene-2,7,10,15-tetraamine (abbreviation: DBC1), Coumarin 30, N-(9,10-Diphenyl-2-anthryl)-N,9-diphenyl-9H-carbazol-3-amine (abbreviation: 2PCAPA), N-[9,10-Bis(biphenyl-2-yl)-2-anthryl]-N,9-diphenyl-9H-carbazol-3-amine (abbreviation: 2PCABPhA), N-(9,10-Diphenyl-2-anthryl)-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPA), N-[9,10-Bis(biphenyl-2-yl)-2-anthryl]-N,N',N-triphenyl-1,4-phenylenediamine (abbreviation: 2DPABPhA), 9,10-Bis(biphenyl-2-yl)-N-[4-(9H-carbazol-9-yl)phenyl]-N-phenylanthracene-2-amine (abbreviation: 2YGABPhA), N,N,9-Triphenylanthracene-9-amine (abbreviation: DPhAPhA), Coumarin 545T, N,N'-Diphenylquinacridone (abbreviation: DPQd), Rubren, 5,12-Bis(biphenyl-4-yl)-6,11-diphenyltetracene (abbreviation: BPT),2-(2-{2-[4-(Dimethylamino)phenyl]ethenyl}-6-methyl-4H-pyran-4-ylidene)propanedinitrile (abbreviation: DCM1), 2-{2-Methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCM2), N,N,N,N-Tetrakis(4-methylphenyl)tetracene-5,11-diamine (abbreviation: p-mPhTD), 7,14-Diphenyl-N,N,N',N'-tetrakis(4-methylphenyl)acenaphtho[1,2-a]fluoranthene-3,10-diamine (abbreviation: p-mPhAFD), 2-{2-Isopropyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTI), 2-{2-tert-Butyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTB), 2-(2,6-Bis{2-[4-(dimethylamino)phenyl]ethenyl}-4H-pyran-4-ylidene)propanedinitrile (abbreviation: BisDCM), 2-{2,6-Bis[2-(8-methoxy-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanenitrile (abbreviation: BisDCJTM), N,N'-Diphenyl-N,N'-(1,6-pyrene-diyl)bis[(6-phenylbenzo[b]naphtho[1,2-d]furan)-8-amine] (abbreviation: 1,6BnfAPrn-03), N,N'-Diphenyl-N,N'-bis(9-phenyl-9H-carbazol-2-yl)naphtho[2,3-b;6,7-b']bisbenzofuran-3,10-diamine (abbreviation: 3,10PCA2Nbf(IV)-02) and 3,10-Bis[N-(dibenzofuran-3-yl)-N-phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10FrA2Nbf(IV)-02). Fused aromatic diamine compounds, typically pyrenediamine compounds, such as... B. 1,6FLPAPrn, 1,6mMemFLPAPrn and 1,6BnfAPrn-03, are particularly preferred because of their high hole-trapping properties, high emission efficiency and high reliability. Examples of the material that can be used when a phosphorescent substance is used as the light-emitting substance in the light-emitting layer 113 are as follows. The examples include organometallic iridium complexes with a 4H-triazole skeleton, such as Tris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl)-4H-1,2,4-triazol-3-yl-κN2]phenyl-κC}iridium(III) (abbreviation: [Ir(mpptz-dmp)3]) and Tris(5-methyl-3,4-diphenyl-4H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir(Mptz)3]); organometallic iridium complexes with a 1H-triazole skeleton, such as... B. Tris[3-methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-triazolato]iridium(III) (abbreviation: [Ir(Mptz1-mp)3] and Tris(1-methyl-5-phenyl-3-propyl-1H-1,2,4-triazolato)iridium(III) (abbreviation: [lr(Prptz1-Me)3]); organometallic iridium complexes with an imidazole skeleton, such asfac-Tris[1-(2,6-diisopropylphenyl)-2-phenyl-1H-imidazole]iridium(III) (abbreviation: [Ir(iPrpim)3]), Tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f]phenanthridinato]iridium(III) (abbreviation: [Ir(dmpimpt-Me)3]) and Tris(2-{1-[2,6-bis(1-methylethyl)phenyl]-1H-imidazol-2-yl-κN3}-4-cyanophenyl-κC)iridium(III) (abbreviation: CNImIr); organometallic iridium complexes with a benzimidazolide backbone, such as... B. Tris[(6-tert-butyl-3-phenyl-2H-imidazo[4,5-b]pyrazin-1-yl-κC2)phenyl-κC]iridium(III) (abbreviation: [Ir(cb)3]); and organometallic iridium complexes in which a phenylpyridine derivative with an electron-withdrawing group is a ligand, such asBis[2-(4',6'-difluorophenyl)pyridinato-N,C2']iridium(III)tetrakis(1-pyrazolyl)borate (abbreviation: FIr6), bis[2-(4',6'-difluorophenyl)pyridinato-N,C2']iridium(III)picolinate (abbreviation: Flrpic), bis{2-[3',5'-bis(trifluoromethyl)phenyl]pyridinato-N,C2'} iridium(III)picolinate (abbreviation: [Ir(CF3ppy)2(pic)]) and bis[2-(4',6'-difluorophenyl)pyridinato-N,C2']iridium(III)acetylacetonate (abbreviation: Flracac). These compounds exhibit blue phosphorescence and have an emission peak in the wavelength range of 440 nm to 520 nm. Other examples include organometallic iridium complexes with a pyrimidine framework, such as... B. Tris(4-methyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm)3]), Tris(4-t-butyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm)3]), (Acetylacetonato)bis(6-methyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm)2(acac)]), (Acetylacetonato)bis(6-tert-butyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm)2(acac)]), (Acetylacetonato)bis[6-(2-norbornyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(nbppm)2(acac)]), (Acetylacetonato)bis[5-methyl-6-(2-methylphenyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(mpmppm)2(acac)]) and (Acetylacetonato)bis(4,6-diphenylpyrimidinato)iridium(III) (abbreviation: [Ir(dppm)2(acac)]); organometallic iridium complexes with a pyrazine framework, such as (Acetylacetonato)bis(3,5-dimethyl-2-phenylpyrazinato)iridium(III) (abbreviation: [Ir(mppr-Me)2(acac)]) and (acetylacetonato)bis(5-isopropyl-3-methyl-2-phenylpyrazinato)iridium(III) (abbreviation: [Ir(mppr-iPr)2(acac)]); organometallic iridium complexes with a pyridine backbone, such as... B. Tris(2-phenylpyridinato-N,C2')iridium(III) (abbreviation: [Ir(ppy)3]), Bis(2-phenylpyridinato-N,C2')iridium(III)acetylacetonate (abbreviation: [Ir(ppy)2(acac)]), Bis(benzo[h]quinolinato)iridium(III)acetylacetonate (abbreviation: [Ir(bzq)2(acac)]), Tris(benzo[h]quinolinato)iridium(III) (abbreviation: [Ir(bzq)3]), Tris(2-phenylquinolinato-N,C2')iridium(III) (abbreviation: [Ir(pq)3]), Bis(2-phenylquinolinato-N,C2')iridium(III)acetylacetonate (abbreviation: [Ir(pq)2(acac)]), [2-d3-Methyl-8-(2-pyridinyl-κN)benzofuro[2,3-b]pyridine-κC]bis[2-(5-d3-methyl-2-pyridinyl-κN2)phenyl-κC]iridium(III) (Abbreviation: [Ir(5mppy-d3)2(mbfpypy-d3)]), {2-(Methyl-d3)-8-[4-(1-methylethyl-1-d)-2-pyridinyl-κN]benzofuro[2,3-b]pyridin-7-yl-κC}bis{5-(methyl-d3)-2-[5-(methyl-d3)-2-pyridinyl-κN]phenyl-κC}iridium(III) (Abbreviation: [Ir(5mtpy-d6)2(mbfpypy-iPr-d4)]), [2-(Methyl-d3)-8-(2-pyridinyl-κN)benzofuro[2,3-b]pyridine-κC]bis[2-(2-pyridinyl-κN)phenyl-κC]iridium(III) (Abbreviation: [Ir(ppy)2(mbfpypy-d3)]), [2-(4-d3-Methyl-5-phenyl-2-pyridinyl-κN2)phenyl-κC]bis[2-(5-d3-methyl-2-pyridinyl-κN2)phenyl-κC]iridium(III) (abbreviation: [Ir(5mppy-d3)2(mdppy-d3)]), and [2-Methyl-8-(2-pyridinyl-κN)benzofuro[2,3-b]pyridine-κC]bis[2-(2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: [Ir(ppy)2(mbfpypy)]); and rare earth metal complexes, such as Tris(acetylacetonato)(monophenanthroline)terbium(III) (abbreviation: [Tb(acac)3(Phen)]). These are mainly compounds that exhibit green phosphorescence and have an emission peak in the wavelength range of 500 nm to 600 nm. It should be noted thatthat organometallic iridium complexes with a pyrimidine framework exhibit significantly high reliability or emission efficiency and are therefore particularly preferred. It should be noted that any of the aforementioned red phosphorescent materials can also be used. In addition to the phosphorescent compounds listed above, other known phosphorescent compounds can be selected and used. Examples of TADF material include a fullerene, a derivative thereof, an acridine, a derivative thereof, and an eosin derivative. Furthermore, a metal-containing porphyrin, such as a porphyrin containing magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), or palladium (Pd), may be specified. Examples of the metal-containing porphyrin include a protoporphyrin tin fluoride complex (SnF2(Proto IX)), a mesoporphyrin tin fluoride complex (SnF2(Meso IX)), a hematoporphyrin tin fluoride complex (SnF2(Hämato IX)), a coproporphyrin tetramethyl ester tin fluoride complex (SnF2(Copro III-4Me)), an octaethylporphyrin tin fluoride complex (SnF2(OEP)), an etioporphyrin tin fluoride complex (SnF2(Etio I)) and an octaethylporphyrin platinum chloride complex (PtCl2OEP), which are represented by the following structural formulas. Alternatively, it is possible to use a heterocyclic compound that has a π-electron-rich heteroaromatic ring and / or a π-electron-poor heteroaromatic ring and is represented by the following structural formulas, such as: B. 2-(Biphenyl-4-yl)-4,6-bis(12-phenylindolo[2,3-a]carbazol-11-yl)-1,3,5-triazine (abbreviation: PIC-TRZ), 9-(4,6-Diphenyl-1,3,5-triazine-2-yl)-9'-phenyl-9H,9'H-3,3'-bicarbazole (abbreviation: PCCzTzn), 9-[4-(4,6-Diphenyl-1,3,5-triazine-2-yl)phenyl]-9'-phenyl-3,3'-bi-9H-carbazole (abbreviation: PCCzPTzn), 2-[4-(10H-Phenoxazine-10-yl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviation: PXZ-TRZ), 3-[4-(5-Phenyl-5,10-dihydrophenazin-10-yl)phenyl]-4,5-diphenyl-1,2,4-triazole (abbreviation: PPZ-3TPT), 3-(9,9-Dimethyl-9H-acridin-10-yl)-9H-xanthen-9-one (abbreviation: ACRXTN), Bis[4-(9,9-dimethyl-9,10-dihydroacridin)phenyl]sulfone (abbreviation: DMAC-DPS) or 10-Phenyl-10H,10'H-spiro[acridin-9,9'-anthracene]-10'-one (abbreviation: ACRSA).Such a heterocyclic compound is preferred because it exhibits high electron transport and hole transport properties due to a π-electron-rich heteroaromatic ring and a π-electron-poor heteroaromatic ring. Among frameworks with a π-electron-poor heteroaromatic ring, a pyridine framework, a diazine framework (a pyrimidine framework, a pyrazine framework, and a pyridazine framework), and a triazine framework are preferred because of their high stability and reliability. In particular, a benzofuropyrimidine framework, a benzothienopyrimidine framework, a benzofuropyrazine framework, and a benzothienopyrazine framework are preferred because of their high acceptor properties and reliability.Among frameworks with the π-electron-rich heteroaromatic ring, an acridine framework, a phenoxazine framework, a phenothiazine framework, a furan framework, a thiophene framework, and a pyrrole framework exhibit high stability and reliability; therefore, at least one of these frameworks is preferably included. A dibenzofuran framework is preferred as the furan framework, and a dibenzothiophene framework is preferred as the thiophene framework. In particular, an indole framework, a carbazole framework, an indolocarbazole framework, a bicarbazole framework, and a 3-(9-phenyl-9H-carbazol-3-yl)-9H-carbazole framework are preferred as the pyrrole framework.It should be noted that a substance in which a π-electron-rich heteroaromatic ring is directly bonded to a π-electron-poor heteroaromatic ring is particularly preferred, since both the electron-donating properties of the π-electron-rich heteroaromatic ring and the electron-accepting properties of the π-electron-poor heteroaromatic ring are improved, the energy difference between the S1 level and the T1 level becomes small, and thus thermally activated delayed fluorescence can be obtained with high efficiency. It should also be noted that an aromatic ring to which an electron-withdrawing group, such as a cyano group, is bonded can be used instead of the π-electron-poor heteroaromatic ring. An aromatic amine framework, a phenazine framework, or the like can be used as the π-electron-rich framework.A xanthene framework, a thioxanthene dioxide framework, an oxadiazole framework, a triazole framework, an imidazole framework, an anthraquinone framework, a boron-containing framework such as phenylborane or boranthrene, an aromatic ring or a heteroaromatic ring with a cyano group or a nitrile group such as benzonitrile or cyanobenzene, a carbonyl framework such as benzophenone, a phosphine oxide framework, a sulfone framework, or the like can be used as a π-electron-deficient framework. As described above, a π-electron-deficient framework and a π-electron-rich framework can be used instead of the π-electron-deficient heteroaromatic ring and / or the π-electron-rich heteroaromatic ring. It is also possible to use a TADF material that enables reversible intersystem crossing at very high speed and emits light according to a thermal equilibrium model between a singlet and a triplet excitation state. Since such a TADF material has a very short emission lifetime (excitation lifetime), it prevents the efficiency of a light-emitting element from being reduced in a high luminance range. In particular, a material with the following molecular structure can be used. It should be noted that a TADF material is one that exhibits a small difference between the S1 and T1 levels and possesses a function for converting triplet excitation energy to singlet excitation energy via reverse intersystem crossing. Thus, a TADF material can, using a small amount of thermal energy, convert triplet excitation energy upwards to singlet excitation energy (i.e., reverse intersystem crossing) and efficiently generate a singlet excitation state. Additionally, the triplet excitation energy can be converted into light emission. An exciplex whose excitation state is formed by two types of substances has a very small difference between the S1 level and the T1 level and serves as a TADF material that can convert the triplet excitation energy into the singlet excitation energy. A phosphorescence spectrum observed at a low temperature (e.g., 77 K to 10 K) is used to define the T1 level. If the energy level of light with a wavelength of the line obtained by extrapolating a tangent to the fluorescence spectrum at a tail on the short wavelength side is the S1 level, and the energy level of light with a wavelength of the line obtained by extrapolating a tangent to the phosphorescence spectrum at a tail on the short wavelength side is the T1 level, then the difference between the S1 level and the T1 level of the TADF material is preferably less than or equal to 0.3 eV, more preferably less than or equal to 0.2 eV. When a TADF material is used as a light-emitting substance, the S1 level of the host material is preferably higher than that of the TADF material. Furthermore, the T1 level of the host material is preferably higher than that of the TADF material. Any metal complex, such as bis(10-hydroxybenzo[h]quinolinato)beryllium(II) (abbreviation: BeBq2), bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminium(III) (abbreviation: BAlq), bis(8-quinolinolato)zinc(II) (abbreviation: Znq), bis[2-(2-benzoxazolyl)phenolato]zinc(II) (abbreviation: ZnPBO), and bis[2-(2-benzothiazolyl)phenolato]zinc(II) (abbreviation: ZnBTZ), or an organic compound with a π-electron-deficient heteroaromatic ring, can be used as the host material. Examples of organic compounds with a π-electron-deficient heteroaromatic ring include organic compounds with a heteroaromatic ring containing an azole skeleton, such as...2-(4-Biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 3-(4-Biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviation: TAZ), 1,3-Bis[5-(4-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: OXD-7), 9-[4-(5-Phenyl-1,3,4-oxadiazol-2-yl)phenyl]-9H-carbazole (abbreviation: CO11), 2,2',2"-(1,3,5-Benzenetriyl)tris(1-phenyl-1H-benzimidazole) (abbreviation: TPBI) and 2-[3-(Dibenzothiophen-4-yl)phenyl]-1-phenyl-1H-benzimidazole (abbreviation: mDBTBIm-II); organic compounds with a heteroaromatic ring with a diazine backbone, such as2-[3-(Dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3'-(Dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), 2-[3'-(9H-Carbazol-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mCzBPDBq), 4,6-Bis[3-(phenanthren-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPnP2Pm), 4,6-Bis[3-(dibenzothiophen-4-yl)phenyl]pyrimidine (abbreviation: 4,6mDBTP2Pm-II) 2,4-Bis[4-(1-naphthyl)phenyl]-6-[4-(3-pyridyl)phenyl]pyrimidine (abbreviation: 2,4NP-6PyPPm), 6-(Biphenyl-3-yl)-4-[3,5-bis(9H-carbazol-9-yl)phenyl]-2-phenylpyrimidine (abbreviation: 6mBP-4Cz2PPm), 4-[3,5-Bis(9H-carbazol-9-yl)phenyl]-2-phenyl-6-(biphenyl-4-yl)pyrimidine (abbreviation: 6BP-4Cz2PPm) and 7-[4-(9-phenyl-9H-carbazol-2-yl)quinazolin-2-yl]-7H-dibenzo[c,g]carbazole (abbreviation: PC-cgDBCzQz); organic compounds with a heteroaromatic ring with a pyridine skeleton, such as:3,5-Bis[3-(9H-carbazol-9-yl)phenyl]pyridine (abbreviation: 35DCzPPy) and 1,3,5-Tri[(3-pyridyl)-phenyl-3-yl]benzene (abbreviation: TmPyPB); and organic compounds with a heteroaromatic ring with a triazine skeleton, such as2-[3'-(9,9-Dimethyl-9H-fluoren-2-yl)biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mFBPTzn), 2-(biphenyl-4-yl)-4-phenyl-6-(9,9'-spirobi[9H-fluoren]-2-yl)-1,3,5-triazine (abbreviation: BP-SFTzn), 2-{3-[3-(Benzo[h]naphtho[1,2-d]furan-8-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mBnfBPTzn), 2-{3-[3-(Benzo[b]naphtho[1,2-d]furan-6-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mBnfBPTzn-02), 5-[3-(4,6-Diphenyl-1,3,5-triazin-2-yl)phenyl]-7,7-dimethyl-5H,7H-indeno[2,1-b]carbazole (abbreviation: mINc(II)PTzn), 2-[3'-(Triphenylen-2-yl)biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mTpBPTzn), 3-[9-(4,6-Diphenyl-1,3,5-triazin-2-yl)-2-dibenzofuranyl]-9-phenyl-9H-carbazole (abbreviation: PCDBfTzn) and 2-(Biphenyl-3-yl)-4-phenyl-6-[8-([1,1':4',1"-terphenyl]-4-yl)-1-dibenzofuranyl]-1,3,5-triazine (abbreviation: mBP-TPDBfTzn).Among the aforementioned materials, the organic compound with a heteroaromatic ring having a diazine framework, the organic compound with a heteroaromatic ring having a pyridine framework, and the organic compound with a heteroaromatic ring having a triazine framework exhibit high reliability and are therefore preferred. In particular, the organic compound with a heteroaromatic ring having a diazine (pyrimidine or pyrazine) framework and the organic compound with a heteroaromatic ring having a triazine framework exhibit high electron transport properties, which contribute to a reduction in operating voltage. An organic compound with an amine skeleton or a π-electron-rich heteroaromatic ring can also be used as a hole transport material, serving as the host material. Examples of organic compounds with an amine skeleton or a π-electron-rich heteroaromatic ring include compounds with an aromatic amine skeleton, such as...4,4'-Bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB), N,N'-Diphenyl-N,N'-bis(3-methylphenyl)-4,4'-diaminobiphenyl (abbreviation: TPD), N,N'-Bis(9,9'-spirobi[9H-fluoren]-2-yl)-N,N'-diphenyl-4,4'-diaminobiphenyl (abbreviation: BSPB), 4-Phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), 4-Phenyl-3'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: mBPAFLP), 4-Phenyl-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBA1 BP), 4,4'-Diphenyl-4"-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBANB), 4,4'-Di(1-naphthyl)-4"-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBNBB), 9,9-Dimethyl-N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]fluorene-2-amine (abbreviation: PCBAF), and N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBASF); compounds with a carbazole skeleton, such as... B.1,3-Bis(N-carbazolyl)benzene (abbreviation: mCP), 4,4'-Di(N-carbazolyl)biphenyl (abbreviation: CBP), 3,6-Bis(3,5-diphenylphenyl)-9-phenylcarbazole (abbreviation: CzTP), and 9,9'-Diphenyl-9H,9'H-3,3'-bicarbazole (abbreviation: PCCP); compounds with a thiophene skeleton, such as... B. 4,4',4"-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II), 2,8-diphenyl-4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviation: DBTFLP-III) and 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviation: DBTFLP-IV); and compounds with a furan skeleton, such as 4,4',4"-(benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviation: DBF3P-II) and 4-{3-[3-(9-phenyl-9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II).Among the aforementioned materials, the compound with an aromatic amine framework or the compound with a carbazole framework is preferred, as these compounds are very reliable and exhibit high hole transport properties, thus contributing to a reduction in operating stress. Furthermore, the organic compounds that have been given as examples of materials with hole transport properties suitable for use in the hole transport layer 112 can also be used as the hole transport material, which is the host material. By mixing the electron transport material with the hole transport material, the transport properties of the light-emitting layer 113 can be easily adjusted, and the recombination range can be easily controlled. A TADF material can be used as either an electron transport material or a hole transport material. The aforementioned materials, which can also be used as TADF materials, can be employed as host materials. When the TADF material is used as a host material, the triplet excitation energy generated within it is converted into singlet excitation energy via reverse intersystem crossing and transferred to the light-emitting substance, thereby increasing the emission efficiency of the light-emitting device. Here, the TADF material acts as an energy donor, and the light-emitting substance acts as an energy acceptor. This is very effective when the light-emitting substance is a fluorescent substance. In this case, the S1 level of the TADF material is preferably higher than that of the fluorescent substance to achieve high emission efficiency. Furthermore, the T1 level of the TADF material is preferably higher than the S1 level of the fluorescent substance. Therefore, the T1 level of the TADF material is preferably higher than that of the fluorescent substance. A TADF material that emits light whose wavelength overlaps with the wavelength of a lowest-energy absorption band of the fluorescent substance is also preferably used. This allows the excitation energy to be easily transferred from the TADF material to the fluorescent substance, thus efficiently obtaining light emission, which is preferable. To efficiently generate the singlet excitation energy from the triplet excitation energy via reverse intersystem crossing, charge carrier recombination preferably occurs within the TADF material. It is also preferred that the triplet excitation energy generated in the TADF material is not transferred to the triplet excitation energy of the fluorescent substance. For this reason, the fluorescent substance preferably has a protecting group surrounding a luminophore (a framework that generates light emission) of the fluorescent substance. Preferably, a substituent lacking a π-bond and a saturated hydrocarbon are used as the protecting group. Specific examples include an alkyl group with 3 to 10 carbon atoms, a substituted or unsubstituted cycloalkyl group with 3 to 10 carbon atoms, and a trialkylsilyl group with 3 to 10 carbon atoms.The fluorescent substance preferably comprises a plurality of protecting groups. The substituents lacking a π-bond exhibit poor charge carrier transport properties, allowing the TADF material and the luminophore of the fluorescent substance to be separated with minimal impact on charge carrier transport or recombination. Here, the luminophore denotes an atomic group (a framework) that generates light emission in a fluorescent substance. The luminophore is preferably a framework with a π-bond, more preferably an aromatic ring, and even more preferably a fused aromatic ring or a fused heteroaromatic ring.Examples of the luminophore include a phenanthrene skeleton, a stilbene skeleton, an acridone skeleton, a phenoxazine skeleton, a phenothiazine skeleton, a naphthalene skeleton, an anthracene skeleton, a fluorene skeleton, a chrysene skeleton, a triphenylene skeleton, a tetracene skeleton, a pyrene skeleton, a perylene skeleton, a coumarin skeleton, a quinacridone skeleton, and a naphthobisbenzofuran skeleton. In particular, a fluorescent substance with a naphthalene scaffold, anthracene scaffold, a fluorene scaffold, a chrysene scaffold, a triphenylene scaffold, a tetracene scaffold, a pyrene scaffold, a perylene scaffold, a coumarin scaffold, a quinacridone scaffold or a naphthobisbenzofuran scaffold is preferred due to its high fluorescence quantum yield. In cases where a fluorescent substance is used as a light-emitting agent, a material with an anthracene framework is suitable as a host material. Using a substance with an anthracene framework as a host material for the fluorescent substance allows for the creation of a light-emitting layer with high emission efficiency and high stability. Among the substances with an anthracene framework that can be used as host materials, a substance with a diphenylanthracene framework, in particular a substance with a 9,10-diphenylanthracene framework, is chemically stable and is therefore preferably used as a host material.The host material preferably has a carbazole framework, as this improves the hole injection and hole transport properties; more preferably, the host material has a benzocarbazole framework in which a benzene ring is further condensed with the carbazole framework, since its HOMO level is approximately 0.1 eV shallower than that of the host material with the carbazole framework, and therefore holes penetrate the host material easily. In particular, the host material preferably has a dibenzocarbazole framework, since its HOMO level is approximately 0.1 eV shallower than that of the host material with the carbazole framework, and therefore holes penetrate the host material easily, the hole transport property is improved, and the heat resistance is increased. Consequently, a substance having both a 9,10-diphenylanthracene skeleton and a carbazole skeleton (or a benzocarbazole or dibenzocarbazole skeleton) is more strongly preferred as a host material.It should be noted that, with regard to the hole injection and hole transport properties described above, a benzofluorene scaffold or a dibenzofluorene scaffold can be used instead of a carbazole scaffold.Examples of such substances include 9-phenyl-3-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation: PCzPA), 3-[4-(1-naphthyl)phenyl]-9-phenyl-9H-carbazole (abbreviation: PCPN), 9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviation: CzPA), 7-[4-(10-phenyl-9-anthryl)phenyl]-7H-dibenzo[c,g]carbazole (abbreviation: cgDBCzPA), 6-[3-(9,10-diphenyl-2-anthryl)phenyl]benzo[b]naphtho[1,2-d]furan (abbreviation: 2mBnfPPA), 9-Phenyl-10-[4'-(9-phenyl-9H-fluoren-9-yl)biphenyl-4-yl]anthracene (abbreviation: FLPPA), 9-(1-Naphthyl)-10-(2-naphthyl)anthracene (abbreviation: α,βADN), 2-(10-Phenylanthracene-9-yl)dibenzofuran, 2-(10-Phenyl-9-anthracene)benzo[b]naphtho[2,3-d]furan (abbreviation: Bnf(II)PhA), 9-(2-Naphthyl)-10-[3-(2-naphthyl)phenyl]anthracene (abbreviation: βN-mβNPAnth) and 1-{4-[10-(Biphenyl-4-yl)-9-anthacenyl]phenyl}-2-ethyl-1H-benzimidazole (abbreviation: EtBImPBPhA).In particular, CzPA, CzPAP, cgDBCzPA, 2mBnfPPA, PCzPA, αN-mβNPAnth and 2αN-αNPAnth exhibit excellent properties and are therefore preferably selected. It should be noted that a phosphorescent substance can be used as part of the mixed material. If a fluorescent substance is used as the light-emitting substance, a phosphorescent substance can be used as an energy donor to supply the excitation energy to the fluorescent substance. An exciplex can be formed from the mixed materials. These mixed materials are preferably selected such that they form an exciplex that emits light whose wavelength overlaps with the wavelength of a lowest-energy absorption band of the light-emitting substance, whereby in this case the energy can be easily transferred and light emission can be efficiently obtained. Such a structure is preferably used to reduce the operating voltage. It should be noted that at least one of the materials forming an exciplex can be a phosphorescent substance. In this case, the triplet excitation energy can be efficiently converted into the singlet excitation energy by reverse intersystem crossing. To efficiently form an exciplex, a material with electron transport properties is preferably combined with a material with hole transport properties, the latter exhibiting a HOMO level higher than or equal to that of the electron-transporting material. Furthermore, the LUMO level of the hole-transporting material is preferably higher than or equal to that of the electron-transporting material. It should be noted that the LUMO and HOMO levels of the materials can be obtained from their electrochemical properties (reduction and oxidation potentials) as measured by cyclic voltammetry (CV). The formation of an exciplex can be confirmed, for example, by comparing the emission spectra of the material with hole transport properties, the material with electron transport properties, and the mixed film of these materials, and by observing the phenomenon where the emission spectrum of the mixed film is shifted towards the longer wavelength than the emission spectrum of each of the materials (or exhibits a different peak on the longer wavelength side). Alternatively, the formation of an exciplex can be confirmed by a difference in the transient response, such as...A phenomenon in which the lifetime of the transient photoluminescence (PL) of the mixed film exhibits components with a longer lifetime or a larger proportion of delay components than that of each of the individual materials can be confirmed, with the difference being observed by comparing the transient PL of the material with hole transport properties, the material with electron transport properties, and the mixed film of these materials. The transient PL can be reformulated as transient electroluminescence (EL). That is, the formation of an exciplex can also be confirmed by a difference in the transient reactions observed by comparing the transient EL of the material with hole transport properties, the material with electron transport properties, and the mixed film of these materials. It should be noted that the light-emitting layer 113 can be formed by an evaporation process (including a vacuum evaporation process), an inkjet process, a coating process, gravure printing, or the like. In addition to the materials mentioned above, an inorganic compound, such as a quantum dot, or a high-molecular-weight compound (e.g., an oligomer, a dendrimer, or a polymer) can be used. < <lochinjektionsschicht>> The hole injection layers (111, 111a and 111b) inject holes from the first electrode 101, which serves as the anode, and the charge generation layers (106, 106a and 106b) into the organic compound layers (103, 103a and 103b) and contain an organic acceptor material and a material with high hole injection properties. The organic compound described in embodiment 1 can also be used for the hole injection layers. For the hole injection layers (111, 111a and 111b) a compound with an electron-withdrawing group (a halogen group or a cyano group) can be used; for example, 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F4-TCNQ), chloranil, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (abbreviation: HAT-CN), 1,3,4,5,7,8-hexafluorotetracyano-naphthoquinodimethane (abbreviation: F6-TCNNQ) or 2-(7-dicyanomethylene-1,3,4,5,6,8,9,10-octafluoro-7H-pyren-2-ylidene)malononitrile can be used. A compound in which electron-withdrawing groups are bonded to a fused aromatic ring with a multitude of heteroatoms, such as HAT-CN, is particularly preferred because it is thermally stable. A [3]radialene derivative having an electron-withdrawing group (especially a cyano group or a halogen group, such as a fluorine group) exhibits very high electron-accepting properties and is therefore preferred.Specific examples include α,α',α"-1,2,3-cyclopropanetriylidentris(4-cyano-2,3,5,6-tetrafluorobenzolacetonitrile) (abbreviation: Rad), α,α',α"-1,2,3-cyclopropanetriylidentris[2,6-dichloro-3,5-difluoro-4-(trifluoromethyl)benzolacetonitrile], and α,α',α"-1,2,3-cyclopropanetriylidentris[2,3,4,5,6-pentafluorobenzolacetonitrile]. In addition to the organic compounds described above, molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, manganese oxide, or the like can be used as an acceptor substance. Alternatively, the hole injection layers (111, 111a, and 111b) can be treated using a phthalocyanine-based compound, such as phthalocyanine (abbreviation: H2Pc), a phthalocyanine-based complex compound, such as copper phthalocyanine (abbreviation: CuPc), an aromatic amine compound, such as4,4'-Bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB) or N,N'-Bis[4-bis(3-methylphenyl)aminophenyl]-N,N'-diphenyl-4,4'-diaminobiphenyl (abbreviation: DNTPD), or a high-molecular-weight compound such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (abbreviation: PEDOT / PSS), can be formed. The substance with acceptor properties can extract electrons from an adjacent hole transport layer (or hole transport material) by applying an electric field. Among substances with an acceptor property, an organic compound with an acceptor property that is easily deposited by evaporation is easy to use. Alternatively, a composite material in which a material with hole-transporting properties contains any of the aforementioned substances with acceptor properties can be used for the hole injection layers (111, 111a, and 111b). In the case where a composite material is used in which a material with hole-transporting properties contains an acceptor substance, a material for forming an electrode can be selected without regard to its work function. In other words, apart from a material with a high work function, a material with a low work function can also be used for the anode (the first electrode 101). Any of the following organic compounds, such as aromatic amines, carbazole derivatives, aromatic hydrocarbons, and high-molecular-weight compounds (e.g., oligomers, dendrimers, or polymers), can be used as the material with hole transport properties for the composite material. It should be noted that the material with hole transport properties used for the composite material preferably has a hole mobility of 1 × 10⁻⁶ cm² / Vs or higher. Organic compounds that can be used as material with hole transport properties in the composite material are specifically listed below. Examples of the aromatic amine compound that can be used for the composite material include N,N'-Di(p-tolyl)-N,N'-diphenyl-p-phenylenediamine (abbreviation: DTDPPA), 4,4'-Bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB), N,N-Bis[4-bis(3-methylphenyl)aminophenyl]-N,N-diphenyl-4,4'-diaminobiphenyl (abbreviation: DNTPD) and 1,3,5-Tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviation: DPA3B). Specific examples of the carbazole derivative include 3-[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA1), 3,6-Bis[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA2), 3-[N-(1-naphthyl)-N-(9-phenylcarbazol-3-yl)amino]-9-phenylcarbazole (abbreviation: PCzPCN1), 4,4'-Di(N-carbazolyl)biphenyl (abbreviation: CBP), 1,3,5-Tris[4-(N-carbazolyl)phenyl]benzene (abbreviation: TCPB), 9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation: CzPA) and 1,4-Bis[4-(N-carbazolyl)phenyl]-2,3,5,6-tetraphenylbenzene.Examples of the aromatic hydrocarbon include 2-tert-butyl-9,10-di(2-naphthyl)anthracene (abbreviation: t-BuDNA), 2-tert-butyl-9,10-di(1-naphthyl)anthracene, 9,10-bis(3,5-diphenylphenyl)anthracene (abbreviation: DPPA), 2-tert-butyl-9,10-bis(4-phenylphenyl)anthracene (abbreviation: t-BuDBA), 9,10-di(2-naphthyl)anthracene (abbreviation: DNA), 9,10-diphenylanthracene (abbreviation: DPAnth), 2-tert-butylanthracene (abbreviation: t-BuAnth), 9,10-bis(4-methyl-1-naphthyl)anthracene (abbreviation: DMNA). 2-tert-Butyl-9,10-bis[2-(1-naphthyl)phenyl]anthracene, 9,10-bis[2-(1-naphthyl)phenyl]anthracene, 2,3,6,7-tetramethyl-9,10-di(1-naphthyl)anthracene, 2,3,6,7-Tetramethyl-9,10-di(2-naphthyl)anthracene, 9,9'-bianthryl, 10,10'-diphenyl-9,9'-bianthryl, 10,10'-bis(2-phenylphenyl)-9,9'-bianthryl, 10,10'-Bis[(2,3,4,5,6-pentaphenyl)phenyl]-9,9'-bianthryl, anthracene, tetracene, rubrene, perylene and 2,5,8,11-Tetra-tert-butylperylene. Other examples include pentacene and coronene.The aromatic hydrocarbon may contain a vinyl skeleton. Examples of aromatic hydrocarbons with a vinyl group include 4,4'-bis(2,2-diphenylvinyl)biphenyl (abbreviation: DPVBi) and 9,10-bis[4-(2,2-diphenylvinyl)phenyl]anthracene (abbreviation: DPVPA). Other examples include high-molecular-weight compounds such as poly(N-vinylcarbazole) (abbreviation: PVK), poly(4-vinyltriphenylamine) (abbreviation: PVTPA), poly[N-(4-{N-[4-(4-diphenylamino)phenyl]phenyl-N'-phenylamino}phenyl)methacrylamide] (abbreviation: PTPDMA) and poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] (abbreviation: poly-TPD). The material exhibiting hole-transport properties and used for the composite material preferably comprises at least one of a carbazole framework, a dibenzofuran framework, a dibenzothiophene framework, and an anthracene framework. In particular, an aromatic amine having a substituent with a dibenzofuran ring or a dibenzothiophene ring, an aromatic monoamine having a naphthalene ring, or an aromatic monoamine in which a 9-fluorenyl group is bonded to the nitrogen of the amine via an arylene group may be used. It should be noted that the material with hole-transport properties preferably has an N,N-bis(4-biphenyl)amino group to enable the fabrication of a long-life light-emitting device. Specific examples of the material with hole transport properties include N-(4-Biphenyl)-6,N-diphenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BnfABP), N,N-Bis(4-biphenyl)-6-phenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf), 4,4'-Bis(6-phenylbenzo[b]naphtho[1,2-d]furan-8-yl)-4"-phenyltriphenylamine (abbreviation: BnfBB1BP), N,N-Bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-6-amine (abbreviation: BBABnf(6)), N,N-Bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf(8)), N,N-Bis(4-biphenyl)benzo[b]naphtho[2,3-d]furan-4-amine (abbreviation: BBABnf(II)(4)), N,N-Bis[4-(dibenzofuran-4-yl)phenyl]-4-amino-p-terphenyl (abbreviation: DBfBB1TP), N-[4-(Dibenzothiophen-4-yl)phenyl]-N-phenyl-4-biphenylamine (abbreviation: ThBA1BP), 4-(2-Naphthyl)-4',4"-diphenyltriphenylamine (abbreviation: BBAßNB), 4-[4-(2-Naphthyl)phenyl]-4',4"-diphenyltriphenylamine (abbreviation: BBAßNBi), 4,4'-Diphenyl-4"-([2,1'-binaphthyl]-6-yl)triphenylamine (abbreviation: BBAαNβNB), 4,4'-Diphenyl-4"-([2,1'-binaphthyl]-7-yl)triphenylamine (abbreviation: BBAαNβNB-03), 4,4'-Diphenyl-4"-(7-phenyl)naphthyl-2-yltriphenylamine (abbreviation: BBAPβNB-03), 4,4'-Diphenyl-4"-([2,2'-binaphthyl]-6-yl)triphenylamine (abbreviation: BBA(βN2)B), 4,4'-Diphenyl-4"-([2,2'-binaphthyl]-7-yl)triphenylamine (abbreviation: BBA(βN2)B-03), 4,4'-Diphenyl-4"-([1,2'-binaphthyl]-4-yl)triphenylamine (abbreviation: BBAβNαNB), 4,4'-Diphenyl-4"-([1,2'-binaphthyl]-5-yl)triphenylamine (abbreviation: BBAβNαNB-02), 4-(4-Biphenylyl)-4'-(2-naphthyl)-4"-phenyltriphenylamine (abbreviation: TPBiAβNB), 4-(3-Biphenylyl)-4'-[4-(2-naphthyl)phenyl]-4"-phenyltriphenylamine (abbreviation: mTPBiAßNBi), 4-(4-Biphenylyl)-4'-[4-(2-naphthyl)phenyl]-4"-phenyltriphenylamine (abbreviation: TPBiAßNBi), 4-Phenyl-4'-(1-naphthyl)triphenylamine (abbreviation: αNBA1BP), 4,4'-Bis(1-naphthyl)triphenylamine (abbreviation: αNBB1BP), 4,4'-Diphenyl-4"-[4'-(carbazol-9-yl)biphenyl-4-yl]triphenylamine (abbreviation: YGTBi1BP), 4'-[4-(3-Phenyl-9H-carbazol-9-yl)phenyl]tris(biphenyl-4-yl)amine (Abbreviation: YGTBi1BP-02), 4-[4'-(Carbazol-9-yl)biphenyl-4-yl]-4'-(2-naphthyl)-4"-phenyltriphenylamine (Abbreviation: YGTBißNB),N-[4-(9-Phenyl-9H-carbazol-3-yl)phenyl]-N-[4-(1-naphthyl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBNBSF), N,N-Bis(biphenyl-4-yl)-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: BBASF), N,N-Bis(biphenyl-4-yl)-9,9'-spirobi[9H-fluorene]-4-amine (abbreviation: BBASF(4)), N-(Biphenyl-2-yl)-N-(9,9-dimethyl-9H-fluorene-2-yl)-9,9'-spirobi[9H-fluorene]-4-amine (abbreviation: oFBiSF), N-(Biphenyl-4-yl)-N-(9,9-dimethyl-9H-fluoren-2-yl)dibenzofuran-4-amine (abbreviation: FrBiF), N-[4-(1-naphthyl)phenyl]-N-[3-(6-phenyldibenzofuran-4-yl)phenyl]-1-naphthylamine (abbreviation: mPDBfBNBN), 4-Phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), 4-Phenyl-3'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: mBPAFLP), 4-Phenyl-4'-[4-(9-phenylfluoren-9-yl)phenyl]triphenylamine (abbreviation: BPAFLBi), 4-Phenyl-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBA1BP), 4,4'-Diphenyl-4"-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBBi1BP),4-(1-naphthyl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBANB), 4,4'-di(1-naphthyl)-4"-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBNBB), N-Phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9'-spirobi[9H-fluoren]-2-amine (abbreviation: PCBASF), N-(biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9H-fluoren-2-amine (abbreviation: PCBBiF), N,N-Bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-4-amine, N,N-Bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-3-amine, N,N-Bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-2-amine and N,N-Bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-1-amine., The material exhibiting hole transport properties and used in the composite material preferably has a relatively low HOMO level of higher than or equal to -5.7 eV and lower than or equal to -5.4 eV. When a material with hole transport properties exhibiting a relatively low HOMO level is used in the composite material, holes are readily injected into the hole transport layer 112, and a long-life light-emitting device is readily obtained. Furthermore, when the material with hole transport properties used in the composite material has a relatively low HOMO level, hole induction can be properly inhibited, thus enabling the light-emitting device to have a longer lifetime. It should be noted that when the aforementioned composite material is mixed with a fluoride of an alkali metal or an alkaline earth metal (the proportion of fluorine atoms in a layer containing the mixed material is preferably greater than or equal to 20%), the refractive index of the layer can be reduced. This also allows a low-refractive-index layer to be formed in the organic compound layer 103, resulting in a higher external quantum efficiency of the light-emitting device. The formation of the hole injection layers (111, 111a and 111b) can improve the hole injection property, which allows the light-emitting device to be operated at low voltage. < <lochtransportschicht>> The hole transport layers (112, 112a and 112b) contain a hole transport material and can be formed using any of the hole transport materials given as examples for the hole injection layer material (111, 111a and 111b). The organic compound described for embodiment 1 can also be used for the hole injection layers. In order for the hole transport layers (112, 112a and 112b) to have a function of transporting holes injected into the hole injection layers (111, 111a and 111b) to the light-emitting layers (113, 113a and 113b), the HOMO level of the hole transport layers (112, 112a and 112b) is preferably equal to or close to the HOMO level of the hole injection layers (111, 111a and 111b). Preferably, a substance with a hole mobility of 1 × 10⁻⁶ cm² / Vs or higher is used as the hole transport material. It should be noted that other substances can also be used, provided their hole transport properties are higher than their electron transport properties. The layer containing a substance with high hole transport properties is not limited to a single layer and can be a layer arrangement of two or more layers, each containing any of the aforementioned substances. Examples of materials that can be used for the hole transport layers (112, 112a and 112b) include compounds with an aromatic amine backbone, such as:4,4'-Bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB), N,N-Diphenyl-N,N-bis(3-methylphenyl)-4,4'-diaminobiphenyl (abbreviation: TPD), N,N'-Bis(9,9'-spirobi[9H-fluoren]-2-yl)-N,N'-diphenyl-4,4'-diaminobiphenyl (abbreviation: BSPB), 4-Phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), 4-Phenyl-3'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: mBPAFLP), 4-Phenyl-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBA1BP), 4,4'-Diphenyl-4"-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBANB), 4,4'-Di(1-naphthyl)-4"-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBNBB), 9,9-Dimethyl-N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]fluorene-2-amine (abbreviation: PCBAF) and N-Phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBASF); compounds with a carbazole skeleton, such as... B.1,3-Bis(N-carbazolyl)benzene (abbreviation: mCP), 4,4'-Di(N-carbazolyl)biphenyl (abbreviation: CBP), 3,6-Bis(3,5-diphenylphenyl)-9-phenylcarbazole (abbreviation: CzTP), 9,9'-Diphenyl-9H,9'H-3,3'-bicarbazole (abbreviation: PCCP), 9,9'-Bis(biphenyl-4-yl)-3,3'-bi-9H-carbazole (abbreviation: BisBPCz), 9,9'-Bis(biphenyl-3-yl)-3,3'-bi-9H-carbazole (abbreviation: BismBPCz) and 9-(Biphenyl-3-yl)-9'-(biphenyl-4-yl)-9H,9'H-3,3'-bicarbazole (abbreviation: mBPCCBP); Compounds with a thiophene skeleton, such as... B. 4,4',4"-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II), 2,8-diphenyl-4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviation: DBTFLP-III) and 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviation: DBTFLP-IV); and compounds with a furan skeleton, such as 4,4',4"-(benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviation: DBF3P-II) and 4-{3-[3-(9-phenyl-9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II).Among the aforementioned materials, the compound with an aromatic amine framework or the compound with a carbazole framework is preferred, as these compounds are very reliable and exhibit high hole transport properties, thus contributing to a reduction in operating stress. It should be noted that any of the substances given as examples of the material with hole transport properties used for the composite material for the hole injection layer 111 can also be suitably used as a material contained in the hole transport layer 112. < <elektronentransportschicht>> The electron transport layers (114, 114a and 114b) have a function of transporting electrons injected from the other of the pair of electrodes (the first electrode 101 or the second electrode 102) via the electron injection layers (115, 115a and 115b) to the light-emitting layer 113. Preferably, an organic compound with electron transport properties and an electron mobility of 1 × 10⁻⁶ cm² / Vs is used as the electron transport material when the square root of the electric field strength [V / cm] is 600. It should be noted that any other substance can also be used, provided that the substance has electron transport properties that are higher than its hole transport properties. The aforementioned organic compound is preferably an organic compound with a π-electron-deficient heteroaromatic ring.The organic compound with a π-electron-deficient heteroaromatic ring is preferably one or more of an organic compound with a heteroaromatic ring having an azole skeleton, an organic compound with a heteroaromatic ring having a pyridine skeleton, an organic compound with a heteroaromatic ring having a diazine skeleton and an organic compound with a heteroaromatic ring having a triazine skeleton. Specific examples of organic compounds with a π-electron-deficient heteroaromatic ring that can be used for the aforementioned electron transport layer include organic compounds with an azole framework, such as... B. 2-(4-Biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 3-(4-Biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviation: TAZ), 1,3-Bis[5-(4-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: OXD-7), 9-[4-(5-Phenyl-1,3,4-oxadiazol-2-yl)phenyl]-9H-carbazole (abbreviation: CO11), 2,2',2"-(1,3,5-Benzenetriyl)tris(1-phenyl-1H-benzimidazole) (abbreviation: TPBI), 2-[3-(Dibenzothiophen-4-yl)phenyl]-1-phenyl-1H-benzimidazole (abbreviation: mDBTBIm-II) and 4,4'-bis(5-methylbenzoxazol-2-yl)stilbene (abbreviation: BzOs); organic compounds with a heteroaromatic ring with a pyridine skeleton, such as 3,5-bis[3-(9H-carbazol-9-yl)phenyl]pyridine (abbreviation: 35DCzPPy), 1,3,5-tri[(3-pyridyl)-phenyl-3-yl]benzene (abbreviation: TmPyPB),Bathophenanthroline (abbreviation: BPhen), bathocuproine (abbreviation: BCP) and 2,9-di(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen); organic compounds with a diazine backbone, such as... B. 2-[3-(Dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3'-(Dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), 2-[3'-(9H-carbazol-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mCzBPDBq), 2-[4'-(9-phenyl-9H-carbazol-3-yl)-3,1'-biphenyl-1-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mpPCBPDBq), 2-[4-(3,6-Diphenyl-9H-carbazol-9-yl)phenyl]dibenzo[f,h]quinoxaline (Abbreviation: 2CzPDBq-III), 7-[3-(Dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (Abbreviation: 7mDBTPDBq-II), 6-[3-(Dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (Abbreviation: 6mDBTPDBq-II), 9-[3'-(Dibenzothiophen-4-yl)biphenyl-3-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (Abbreviation: 9mDBtBPNfpr), 9-[3'-(Dibenzothiophen-4-yl)biphenyl-4-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9pmDBtBPNfpr), 4,6-Bis[3-(phenanthren-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPnP2Pm), 4,6-Bis[3-(dibenzothiophen-4-yl)phenyl]pyrimidine (abbreviation: 4,6mDBTP2Pm-II), 4,6-Bis[3-(9H-carbazol-9-yl)phenyl]pyrimidine (abbreviation: 4,6mCzP2Pm), 9,9'-[Pyrimidine-4,6-diylbis(biphenyl-3,3'-diyl)]bis(9H-carbazole) (abbreviation: 4,6mCzBP2Pm), 8-(Biphenyl-4-yl)-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 8BP-4mDBtPBfpm), 3,8-Bis[3-(dibenzothiophen-4-yl)phenyl]benzofuro[2,3-b]pyrazine (abbreviation: 3.8mDBtP2Bfpr), 8-[3'-(Dibenzothiophen-4-yl)biphenyl-3-yl]naphtho[1',2':4,5]furo[3,2-d]pyrimidine (abbreviation: 8mDBtBPNfpm), 8-[(2,2'-Binaphthalene)-6-yl)]-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 8(βN2)-4mDBtPBfpm), 2,2'-(Pyridine-2,6-diyl)bis(4-phenylbenzo[h]quinazoline) (abbreviation: 2,6(P-Bqn)2Py), 2,2'-(Pyridine-2,6-diyl)bis{4-[4-(2-naphthyl)phenyl]-6-phenylpyrimidine} (abbreviation: 2,6(NP-PPm)2Py), 6-(Biphenyl-3-yl)-4-[3,5-bis(9H-carbazol-9-yl)phenyl]-2-phenylpyrimidine (abbreviation: 6mBP-4Cz2PPm), 2,4-bis[4-(1-naphthyl)phenyl]-6-[4-(3-pyridyl)phenyl]pyrimidine (abbreviation: 2,4NP-6PyPPm), 4-[3,5-bis(9H-carbazol-9-yl)phenyl]-2-phenyl-6-(biphenyl-4-yl)pyrimidine (abbreviation: 6BP-4Cz2PPm) and 7-[4-(9-phenyl-9H-carbazol-2-yl)quinazolin-2-yl]-7H-dibenzo[c,g]carbazole (abbreviation: PC-cgDBCzQz); and organic compounds with a triazine skeleton, such as... B. 2-[3'-(9,9-Dimethyl-9H-fluoren-2-yl)biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mFBPTzn), 2-(biphenyl-4-yl)-4-phenyl-6-(9,9'-spirobi[9H-fluoren]-2-yl)-1,3,5-triazine (abbreviation: BP-SFTzn), 2-{3-[3-(Benzo[b]naphtho[1,2-d]furan-8-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mBnfBPTzn), 2-{3-[3-(Benzo[b]naphtho[1,2-d]furan-6-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (Abbreviation: mBnfBPTzn-02), 9-[4-(4,6-Diphenyl-1,3,5-triazin-2-yl)phenyl]-9'-phenyl-3,3'-bi-9H-carbazole (Abbreviation: PCCzPTzn), 9-[3-(4,6-Diphenyl-1,3,5-triazin-2-yl)phenyl]-9'-phenyl-2,3'-bi-9H-carbazole (abbreviation: mPCCzPTzn-02), 5-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-7,7-dimethyl-5H,7H-indeno[2,1-b]carbazole (abbreviation: mlNc(II)PTzn), 2-{3-[3-(Dibenzothiophen-4-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mDBtBPTzn), 2,4,6-Tris[3'-(pyridin-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviation: TmPPPyTz), 2-[3-(2,6-Dimethyl-3-pyridinyl)-5-(9-phenanthrenyl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mPn-mDMePyPTzn), 11-[4-(Biphenyl-4-yl)-6-phenyl-1,3,5-triazin-2-yl]-11,12-dihydro-12-phenylindolo[2,3-a]carbazole (abbreviation: BP-Icz(II)Tzn), 2-[3'-(Triphenylen-2-yl)biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (Abbreviation: mTpBPTzn), 3-[9-(4,6-diphenyl-1,3,5-triazin-2-yl)-2-dibenzofuranyl]-9-phenyl-9H-carbazole (abbreviation: PCDBfTzn) and 2-(Biphenyl-3-yl)-4-phenyl-6-[8-[(1,1':4',1"-terphenyl)-4-yl]-1-dibenzofuranyl]-1,3,5-triazine (abbreviation: mBP-TPDBfTzn); and complexes,such as 8-quinolinatolithium (abbreviation: Liq) and tris(8-quinolinolato)aluminium (abbreviation: Alq3). Among the aforementioned materials, the organic compound with a heteroaromatic ring having a diazine framework, the organic compound with a heteroaromatic ring having a pyridine framework, and the organic compound with a heteroaromatic ring having a triazine framework exhibit high reliability and are therefore preferred. In particular, the organic compound with a heteroaromatic ring having a diazine (pyrimidine or pyrazine) framework and the organic compound with a heteroaromatic ring having a triazine framework exhibit high electron transport properties and contribute to a reduction in operating voltage. Each of the electron transport layers (114, 114a and 114b) is not limited to a single layer and can be a layer arrangement of two or more layers, each containing any one of the aforementioned substances. A layer controlling electron carrier transfer can be provided between the electron transport layer (114, 114a, or 114b) and the light-emitting layer (113, 113a, or 113b). This layer is formed by adding a small amount of a substance with high electron-trapping properties to a material with high electron transport properties, as described above. The layer is capable of regulating the charge carrier balance by suppressing electron carrier transport. Such a structure is very effective in preventing problems (such as a reduction in the element's lifetime) that occur when electrons pass through the light-emitting layer. < <elektroneninjektionsschicht>> The electron injection layers (115, 115a and 115b) have a function to reduce a barrier to electron injection from the second electrode 102 in order to promote electron injection. For the electron injection layers, a Group 1 metal, a Group 2 metal, an oxide of these metals, a halide of these metals, a carbonate of these metals, or the like can be used. Alternatively, a composite material can be used that contains any of the electron transport materials described above and a material that has the property of donating electrons to the electron transport material. Examples of the material that has an electron-donating property include a Group 1 metal, a Group 2 metal, an oxide of any of these metals, and the like. In particular, an alkali metal, an alkaline earth metal, or a compound thereof, such as lithium fluoride (LiF), sodium fluoride (NaF), cesium fluoride (CsF), calcium fluoride (CaF₂), or lithium oxide (LiOx), can be used. Alternatively, a rare-earth metal compound, such as...Erbium fluoride (ErF3) can be used. An electride can also be used for the electron injection layer 115. Examples of the electride include a substance in which electrons are added to calcium oxide-aluminum oxide at a high concentration. The electron injection layers (115, 115a, and 115b) can be formed using the same substance that can be used for the electron transport layers (114, 114a, and 114b). A composite material in which an organic compound and an electron donor (donor) are mixed can also be used for the electron injection layers (115, 115a, and 115b). Such a composite material exhibits excellent electron injection and electron transport properties, since electrons are generated in the organic compound by the electron donor. In this case, the organic compound is preferably a material that can transport the generated electrons excellently. In particular, for example, any of the substances described above (e.g., a metal complex or a heteroaromatic compound) can be used to form the electron transport layer 114. The electron donor can be a substance that exhibits electron-donating properties with respect to the organic compound.In particular, an alkali metal, an alkaline earth metal, or a rare earth metal, such as lithium, sodium, cesium, magnesium, calcium, erbium, or ytterbium, is preferably used. It is also preferable to use an alkali metal oxide or an alkaline earth metal oxide, such as lithium oxide, calcium oxide, or barium oxide. Alternatively, a Lewis base, such as magnesium oxide, may be used. As a further alternative, an organic compound, such as tetrathiafulvalene (abbreviation: TTF), may be used. It should be noted that the light-emitting layer, hole injection layer, hole transport layer, electron transport layer, and electron injection layer described above can each be formed by an evaporation process (including a vacuum evaporation process), an inkjet process, a coating process, a gravure printing process, or the like. In addition to the materials mentioned above, an inorganic compound, such as a quantum dot, or a high-molecular-weight compound (e.g., an oligomer, a dendrimer, or a polymer) can be used for the light-emitting layer, the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer. The quantum dot can be, for example, a colloidal quantum dot, an alloy quantum dot, a core-shell quantum dot, or a core-quantum quantum dot. A quantum dot containing elements from groups 2 and 16, elements from groups 13 and 15, elements from groups 13 and 17, elements from groups 11 and 17, or elements from groups 14 and 15 can be used. Alternatively, a quantum dot containing an element such as cadmium (Cd), selenium (Se), zinc (Zn), sulfur (S), phosphorus (P), indium (In), tellurium (Te), lead (Pb), gallium (Ga), arsenic (As), or aluminum (Al) can be used. <<Paar von Elektroden> > The first electrode 101 and the second electrode 102 serve as the anode and cathode of the light-emitting device. The first electrode 101 and the second electrode 102 can be formed using a metal, an alloy, a conductive compound, a mixture, or a layered arrangement of these or the like. The first electrode 101 or the second electrode 102 is preferably formed using a conductive material with a light-reflecting function. Examples of the conductive material include aluminum (Al), an alloy containing Al, and the like. Examples of the alloy containing Al include an alloy containing Al and L (where L represents one or more of titanium (Ti), neodymium (Nd), nickel (Ni), and lanthanum (La)), such as an alloy containing Al and Ti, or an alloy containing Al, Ni, and La. Aluminum has low resistance and high light reflectivity. Aluminum is abundant in the Earth's crust and is inexpensive; consequently, it is possible to reduce the cost of manufacturing a light-emitting device using aluminum.Alternatively, silver (Ag), an alloy of Ag and N (where N represents one or more of yttrium (Y), Nd, magnesium (Mg), ytterbium (Yb), Al, Ti, gallium (Ga), zinc (Zn), indium (In), tungsten (W), manganese (Mn), tin (Sn), iron (Fe), Ni, copper (Cu), palladium (Pd), iridium (Ir), and gold (Au)), or the like may be used. Examples of silver-containing alloys include an alloy containing silver, palladium, and copper; an alloy containing silver and copper; an alloy containing silver and magnesium; an alloy containing silver and nickel; an alloy containing silver and gold; an alloy containing silver and ytterbium; and the like. In addition, a transition metal, such as tungsten, chromium (Cr), molybdenum (Mo), copper, or titanium, may be used. Light emitted by the light-emitting layer is extracted via the first electrode 101 and / or the second electrode 102. Accordingly, at least one of the first electrode 101 and the second electrode 102 is preferably formed using a conductive material with a light-transmitting function. The conductive material used can be a material whose transmittance for visible light is greater than or equal to 40% and less than or equal to 100%, preferably greater than or equal to 60% and less than or equal to 100%, and whose resistivity is less than or equal to 1 × 10⁻² Ω·cm. The first electrode 101 and the second electrode 102 can each be configured using a conductive material with transmitting and reflecting properties. The conductive material can be one whose reflectivity for visible light is greater than or equal to 20% and less than or equal to 80%, preferably greater than or equal to 40% and less than or equal to 70%, and whose resistivity is less than or equal to 1 × 10⁻² Ω·cm. For example, one or more types of conductive metals and alloys, conductive compounds, and the like can be used. In particular, a metal oxide, such as...An indium tin oxide (hereinafter referred to as ITO), an indium tin oxide containing silicon or silicon oxide (ITSO), an indium zinc oxide, an indium tin oxide containing titanium, an indium titanium oxide, or an indium oxide containing tungsten oxide and zinc oxide may be used. A thin metal film with a thickness that allows the transmission of light (preferably greater than or equal to 1 nm and less than or equal to 30 nm) may also be used. For example, silver (Ag) may be used as the metal. An alloy of silver (Ag) and aluminum (Al), an alloy of silver (Ag) and magnesium (Mg), an alloy of silver (Ag) and gold (Au), an alloy of silver (Ag) and ylb (Yb), or the like may be used as the alloy. In this description and the like, a material exhibiting a light-transmitting function is defined as a material that transmits visible light and possesses conductivity. Examples of such a material include, in addition to the oxide conductor described above, of which ITO is a typical example, an oxide semiconductor and an organic conductor containing an organic substance. Examples of the organic conductor containing an organic substance include a composite material in which an organic compound and an electron donor are combined, and a composite material in which an organic compound and an electron acceptor are combined. Alternatively, an inorganic, carbon-based material, such as graphene, may be used. The resistivity of the material is preferably less than or equal to 1 × 10⁵ Ω·cm, more preferably less than or equal to 1 × 10⁴ Ω·cm. The first electrode 101 and / or the second electrode 102 can be formed by arranging two or more of the materials described above on top of each other. To improve light extraction efficiency, a material with a higher refractive index than that of a transmitting electrode can be formed in contact with the electrode. The material can be electrically conductive or non-conductive, as long as it transmits visible light. In addition to the oxide conductors described above, examples of such materials include an oxide semiconductor and an organic compound. Examples of organic compounds include materials for the light-emitting layer, hole injection layer, hole transport layer, electron transport layer, and electron injection layer. Alternatively, an inorganic, carbon-based material or a metal film thin enough to transmit light can be used.As another alternative, a large number of layers, each with a thickness of several nanometers to several tens of nanometers, can be arranged on top of each other. In the case where the first electrode 101 or the second electrode 102 serves as the cathode, the electrode preferably contains a material with a low work function (less than or equal to 3.8 eV). For example, an element belonging to Group 1 or Group 2 of the periodic table (e.g., an alkali metal such as lithium, sodium, or cesium; an alkaline earth metal such as calcium or strontium; or magnesium), an alloy containing any of these elements (e.g., Ag-Mg or Al-Li), a rare earth metal such as europium (Eu) or Yb, an alloy containing any of these rare earth metals, an alloy containing aluminum or silver, or the like may be used. If the first electrode 101 or the second electrode 102 is used as the anode, a material with a high work function (higher than or equal to 4.0 eV) is preferably used. The first electrode 101 and the second electrode 102 can be a layered arrangement of a conductive material with a function for reflecting light and a conductive material with a function for transmitting light. This structure is preferably used, wherein in this case the first electrode 101 and the second electrode 102 can each have a function for adjusting the optical path length, so that light with a desired wavelength, emitted by each light-emitting layer, oscillates and is amplified. Depending on requirements, a sputtering process, an evaporation process, a printing process, a coating process, a molecular beam epitaxy (MBE) process, a CVD process, a pulsed laser deposition process, an atomic layer deposition (ALD) process or the like can be used as a method for forming the first electrode 101 and the second electrode 102. <<Ladungserzeugungsschicht (Zwischenschicht)> > The charge-generating layer 106 has a function for injecting electrons into the organic compound layer 103a and for injecting holes into the organic compound layer 103b when a voltage is applied between the first electrode (anode) 101 and the second electrode (cathode) 102. The charge-generating layer 106 can be either a p-type layer in which an electron acceptor is added to a hole transport material, or an electron injection buffer layer in which an electron donor is added to an electron transport material. Alternatively, these two layers can be stacked on top of each other. Furthermore, an electron conduction layer can be provided between the p-type layer and the electron injection buffer layer. In the case where the charge-generating layer 106 is a p-type layer to which an electron acceptor (a substance with acceptor properties) is added to a hole-transporting material that is an organic compound, any of the hole-transporting materials described for this embodiment can be used as the hole-transporting material. Examples of the electron acceptor (the substance with acceptor properties) include organic compounds with an electron-withdrawing group (e.g., a halogen group or a cyano group), such as... B. 7,7,8,8-Tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F4-TCNQ), Chloranil, 2,3,6,7,10,11-Hexacyano-1,4,5,8,9,12-hexaazatriphenylene (abbreviation: HAT-CN), 1,3,4,5,7,8-Hexafluorotetracyanonaphthoquinodimethane (abbreviation: F6-TCNNQ) and 2-(7-Dicyanomethylene-1,3,4,5,6,8,9,10-octafluoro-7H-pyren-2-ylidene)malononitrile, are used.A compound in which electron-withdrawing groups are bonded to a fused aromatic ring with a multitude of heteroatoms, such as HAT-CN, is particularly preferred because it is thermally stable. A [3]radialene derivative having an electron-withdrawing group (especially a cyano group or a halogen group, such as a fluorine group) exhibits very high electron-accepting properties and is therefore preferred. Specific examples include α,α',α"-1,2,3-cyclopropanetriylidentris(4-cyano-2,3,5,6-tetrafluorobenzolacetonitrile) (abbreviation: Rad), α,α',α"-1,2,3-cyclopropanetriylidentris[2,6-dichloro-3,5-difluoro-4-(trifluoromethyl)benzolacetonitrile], and α,α',α"-1,2,3-cyclopropanetriylidentris[2,3,4,5,6-pentafluorobenzolacetonitrile]. In addition to the organic compounds described above, a transition metal oxide, such as...A molybdenum oxide, a vanadium oxide, a ruthenium oxide, a tungsten oxide, or a manganese oxide can be used. Alternatively, the p-type layer of the charge-generating layer 106 can be formed using a phthalocyanine-based compound, such as phthalocyanine (abbreviation: H₂Pc), a phthalocyanine-based complex compound, such as copper phthalocyanine (abbreviation: CuPc), or an aromatic framework, such as 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB) or N,N'-bis[4-bis(3-methylphenyl)aminophenyl]-N,N'-diphenyl-4,4'-diaminobiphenyl (abbreviation: DNTPD). A substance with acceptor properties can extract electrons from an adjacent hole transport layer (or hole transport material) by applying an electric field. Among substances with acceptor properties, an organic compound that is readily deposited by evaporation is easy to use. The hole injection layer 111 is preferably formed using a composite material that contains any of the aforementioned materials with an acceptor property and an organic compound with a hole transport property. In the case where the charge generation layer 106 is an electron injection buffer layer in which an electron donor is added to an electron transport material, any of the electron transport materials described in this embodiment can be used as the electron transport material. An alkali metal, an alkaline earth metal, a rare earth metal, a metal belonging to Group 2 or Group 13 of the periodic table, or an oxide or carbonate thereof can be used as an electron donor. Specific examples include lithium (Li), sodium (Na), cesium (Cs), magnesium (Mg), calcium (Ca), erbium (Er), ytterbium (Yb), indium (In), and silver (Ag). It is also preferable to use an alkali metal oxide or an alkaline earth metal oxide, such as lithium oxide (Li₂O), calcium oxide, or barium oxide. Alternatively, a Lewis base, such as indium oxide (In₂O₃), cesium carbonate, or magnesium oxide, can be used. As a further alternative, an organic compound, such as tetrathiafulvalene (abbreviation: TTF), can be used as an electron donor. If an electron transfer layer is provided in the charge generation layer 106 between a p-type layer and an electron injection buffer layer, the electron transfer layer contains at least one substance with electron transport properties and has a function for preventing interaction between the electron injection buffer layer and the p-type layer and for facilitating electron transfer. The LUMO level of the substance with electron transport properties in the electron transfer layer preferably lies between the LUMO level of the acceptor substance in the p-type layer and the LUMO level of the substance with electron transport properties in the electron transfer layer that is in contact with the charge generation layer 106.In particular, the LUMO level of the substance with electron transport properties in the electron conduction layer is preferably higher than or equal to -5.0 eV, more preferably higher than or equal to -5.0 eV and lower than or equal to -3.0 eV. It should be noted that the substance with electron transport properties in the electron conduction layer is preferably a phthalocyanine-based material or a metal complex having a metal-oxygen bond and an aromatic ligand. Although Fig. 2D shows the structure in which the two organic compound layers 103 are arranged one above the other, three or more organic compound layers can be arranged one above the other, with charge-generating layers provided between different light-emitting layers. < <cap-schicht>> Although not shown in Figures 2A to 2E, a cap layer can be provided over the second electrode 102 of the light-emitting device. For example, a material with a high refractive index can be used for the cap layer. Providing the cap layer over the second electrode 102 can improve the extraction efficiency of light emitted via the second electrode 102. Specific examples of a material that can be used for the cap layer include 5,5'-Diphenyl-2,2'-di-5H-[1]benzothieno[3,2-c]carbazole (abbreviation: BisBTc) and 4,4',4"-(Benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II). < <substrat>> A light-emitting device of an embodiment of the present invention can be formed over a substrate made of glass, plastic, or the like. Layers can be arranged on top of each other over the substrate, either from the side of the first electrode 101 or from the side of the second electrode 102. For the substrate on which the light-emitting device of an embodiment of the present invention can be formed, glass, quartz, plastic, or the like can be used, for example. Alternatively, a flexible substrate can be used. The flexible substrate means, for example, a substrate that can be bent, such as a plastic substrate made of polycarbonate or polyarylate. Alternatively, a film, an inorganic film formed by evaporation, or the like can be used. Another material can be used, provided that the substrate serves as a support in a manufacturing process for the light-emitting devices or the optical elements. Another material with a function for protecting the light-emitting devices or the optical elements can be used. For example, in this description and the like, a light-emitting device can be designed using any number of different substrates. There is no particular restriction regarding the type of substrate. Examples of substrates include a semiconductor substrate (e.g., a single-crystal substrate such as a silicon substrate), a SOI substrate, a glass substrate, a quartz substrate, a plastic substrate, a metal substrate, a stainless steel substrate, a substrate containing a stainless steel foil, a tungsten substrate, a substrate containing a tungsten foil, a flexible substrate, a mounting film, as well as cellulose nanofiber (CNF), paper, and a base material film containing a fiber material. Examples of glass substrates include a barium borosilicate glass substrate, an aluminum borosilicate glass substrate, and a soda-lime glass substrate.Examples of flexible substrates, mounting films, base material films, and the like include plastic substrates, such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), and polytetrafluoroethylene (PTFE). Acrylic resins are another example. Polypropylene, polyester, polyvinyl fluoride, and polyvinyl chloride can also be cited as examples. Further examples include resins such as polyamide, polyimide, aramid, or epoxy resins, evaporated inorganic films, and paper. Alternatively, a flexible substrate can be used, and a light-emitting device can be placed directly on the flexible substrate. Another alternative is to provide a separating layer between the substrate and the light-emitting device. The separating layer can be used to separate part or all of the light-emitting device formed above the separating layer from the substrate and transfer the separated component to another substrate. In this case, the light-emitting device can also be transferred to a substrate with low heat resistance or to a flexible substrate.For the aforementioned separating layer, for example, a layer arrangement comprising inorganic films, namely a tungsten film and a silicon oxide film, or a structure in which a resin film of polyimide or the like is formed over a substrate can be used. In other words, once the light-emitting device has been formed using one substrate, it can be transferred to another. Examples of substrates onto which the light-emitting device can be transferred include, in addition to those mentioned above, a cellophane substrate, a rock substrate, a wood substrate, a fabric substrate (including natural fibers such as silk, cotton, or hemp; synthetic fibers such as nylon, polyurethane, or polyester; regenerated fibers such as acetate, cupro, viscose, or regenerated polyester), a leather substrate, a rubber substrate, and the like. Using such a substrate allows for the creation of a light-emitting device with high durability, high heat resistance, reduced weight, or reduced thickness. The light-emitting device can, for example, be formed over an electrode electrically connected to a field-effect transistor (FET) formed over any of the substrates described above. In this case, an active-matrix display device can be constructed in which the FET controls the operation of the light-emitting device. In this embodiment, one embodiment of the present invention has been described. Further embodiments of the present invention are described in other embodiments. It should be noted that an embodiment of the present invention is not limited to this. In other words, various embodiments of the invention are described in this embodiment and in the other embodiments, and an embodiment of the present invention is not limited to any one particular embodiment. For example, although the example in which an embodiment of the present invention is used in a light-emitting device is described, an embodiment of the present invention is not limited to this. For example, depending on the circumstances or conditions, an embodiment of the present invention is not necessarily used in a light-emitting device.One embodiment of the present invention describes, though not limited thereto, an example comprising a first organic compound, a second organic compound, and a guest material suitable for converting the triplet excitation energy into light emission, and in which the LUMO level of the first organic compound is lower than that of the second organic compound, and the HOMO level of the first organic compound is lower than that of the second organic compound. Depending on the circumstances or conditions, in one embodiment of the present invention, the LUMO level of the first organic compound is, for example, not necessarily lower than that of the second organic compound. Alternatively, the HOMO level of the first organic compound is not necessarily lower than that of the second organic compound.One embodiment of the present invention describes, though not limited thereto, an example in which the first organic compound and the second organic compound form an exciplex. Depending on the circumstances or conditions, in one embodiment of the present invention, for example, the first organic compound and the second organic compound do not necessarily form an exciplex. One embodiment of the present invention describes, though not limited thereto, an example in which the LUMO level of the guest material is higher than that of the first organic compound and the HOMO level of the guest material is lower than that of the second organic compound. Depending on the circumstances or conditions, in one embodiment of the present invention, for example, the LUMO level of the guest material is not necessarily higher than that of the first organic compound.Alternatively, the HOMO level of the guest material is not necessarily lower than that of the second organic compound. The structure described above for this embodiment can be used in a suitable combination with any of the structures described for the other embodiments. (Version 3) As shown in Figs. 3A and 3B, a plurality of light-emitting devices 130 are formed over an insulating layer 175 to form a display device. In this embodiment, a display device of an embodiment of the present invention is described in detail. A display unit 100 comprises a pixel section 177 in which a plurality of pixels 178 are arranged in a matrix. The pixel 178 comprises a subpixel 110R, a subpixel 110G and a subpixel 110B. In this description and similar texts, for example, an explanation common to subpixels 110R, 110G, and 110B is given, in some cases using the collective term "subpixel 110." Regarding other components, which are distinguished from one another using letters of the alphabet, common features of the components are described in some cases using reference symbols without the letters of the alphabet. Subpixel 110R emits red light, subpixel 110G emits green light, and subpixel 110B emits blue light. Therefore, an image can be displayed on pixel section 177. It should be noted that in this embodiment, three colors—red (R), green (G), and blue (B)—are given as examples of the colors of light emitted by the subpixels; however, subpixels of a different combination of colors can be used. The number of subpixels is not limited to three and can be four or more. Examples of four subpixels include subpixels emitting light of four colors: R, G, B, and white (W); subpixels emitting light of four colors: R, G, B, and yellow (Y); and four subpixels emitting light of R, G, B, and infrared (IR). In this description and similar texts, the row direction and column direction are sometimes referred to as the X-direction and Y-direction, respectively. The X-direction and the Y-direction intersect each other and are, for example, perpendicular to each other. Fig. 3A shows an example in which subpixels of different colors are arranged in the X direction and subpixels of the same color are arranged in the Y direction. It should be noted that subpixels of different colors can be arranged in the Y direction and that subpixels of the same color can be arranged in the X direction. Outside pixel section 177, a connection section 140 is provided, and an area 141 may also be provided. Area 141 is provided between pixel section 177 and connection section 140. The organic connection layer 103 is provided in area 141. A conductive layer 151C is provided in connection section 140. Although Fig. 3A shows an example where area 141 and connecting section 140 are located on the right side of pixel section 177, there is no particular restriction regarding the positions of area 141 and connecting section 140. The number of areas 141 and the number of connecting sections 140 can each be one or more. Fig. 3B is an example of a cross-sectional view along the dashed line A1-A2 in Fig. 3A. As shown in Fig. 3B, the display device 100 comprises an insulating layer 171, a conductive layer 172 over the insulating layer 171, an insulating layer 173 over the insulating layer 171 and the conductive layer 172, an insulating layer 174 over the insulating layer 173, and the insulating layer 175 over the insulating layer 174. The insulating layer 171 is provided over a substrate (not shown). An opening reaching the conductive layer 172 is provided in the insulating layers 175, 174, and 173, and a terminal plug 176 is provided to fill the opening. In pixel section 177, the light-emitting device 130 is provided above the insulating layer 175 and the terminal plug 176. A protective layer 131 is provided to cover the light-emitting device 130. A substrate 120 is attached to the protective layer 131 with a resin layer 122. An inorganic insulating layer 125 and an insulating layer 127 above the inorganic insulating layer 125 are preferably provided between the adjacent light-emitting devices 130. Although Fig. 3B shows cross-sections of a plurality of the inorganic insulating layers 125 and a plurality of the insulating layers 127, the inorganic insulating layers 125 are preferably interconnected, and the insulating layers 127 are preferably interconnected, when the display device 100 is viewed from above. That is to say, the insulating layer 127 preferably comprises opening sections above first electrodes. Figure 3B shows a light-emitting device 130R, a light-emitting device 130G, and a light-emitting device 130B, referred to as light-emitting devices 130. The light-emitting devices 130R, 130G, and 130B emit light of different colors. For example, the light-emitting device 130R can emit red light, the light-emitting device 130G can emit green light, and the light-emitting device 130B can emit blue light. Alternatively, the light-emitting device 130R, the light-emitting device 130G, or the light-emitting device 130B can emit visible light of another color or infrared light. The display device of an embodiment of the present invention can, for example, be a top-emission display device in which light is emitted in the direction opposite to that of a substrate above which light-emitting devices are formed. It should be noted that the display device of an embodiment of the present invention can also be a bottom-emission type. Examples of a light-emitting substance contained in the light-emitting device 130 include organic compounds and organometallic complexes, such as a substance that emits fluorescent light (a fluorescent material), a substance that emits phosphorescent light (a phosphorescent material), and a substance that exhibits thermally activated delayed fluorescence (a thermally activated delayed fluorescence, TADF, material). Other examples include inorganic compounds (e.g., a quantum dot material). The light-emitting device 130R has a structure shown in Fig. 1A. The light-emitting device 130R comprises the first electrode (pixel electrode), which includes a conductive layer 151R and a conductive layer 152R, an organic compound layer 103R over the first electrode, a common layer 104 over the organic compound layer 103R, and a second electrode (common electrode) 102 over the common layer 104. Although the common layer 104 is not necessarily provided, it is preferably provided to reduce damage to the organic compound layer 103R during processing. In the case where the common layer 104 is provided, it is preferably an electron injection layer.In the case where the common layer 104 is provided, a layer arrangement consisting of the organic compound layer 103R and the common layer 104 corresponds to the organic compound layer 103 described in embodiment 2. The light-emitting device 130G has a structure as shown in Fig. 1A. The light-emitting device 130G comprises the first electrode (pixel electrode), which includes a conductive layer 151G and a conductive layer 152G, an organic compound layer 103G over the first electrode, the common layer 104 over the organic compound layer 103G, and the second electrode (common electrode) 102 over the common layer 104. Although the common layer 104 is not necessarily provided, it is preferably provided to reduce damage to the organic compound layer 103G during processing. In the case where the common layer 104 is provided, it is preferably an electron injection layer.In the case where the common layer 104 is provided, a layer arrangement consisting of the organic compound layer 103G and the common layer 104 corresponds to the organic compound layer 103 described in embodiment 2. The light-emitting device 130B has a structure shown in Fig. 1A. The light-emitting device 130B comprises the first electrode (pixel electrode), which includes a conductive layer 151B and a conductive layer 152B, an organic compound layer 103B over the first electrode, the common layer 104 over the organic compound layer 103B, and the second electrode (common electrode) 102 over the common layer 104. Although the common layer 104 is not necessarily provided, it is preferably provided to reduce damage to the organic compound layer 103B during processing. In the case where the common layer 104 is provided, it is preferably an electron injection layer.Furthermore, in the case where the common layer 104 is provided, a layer arrangement consisting of the organic compound layer 103B and the common layer 104 corresponds to the organic compound layer 103 described in embodiment 2. In the light-emitting device, one of the pixel electrodes and the common electrode serve as the anode, and the other serves as the cathode. The following description assumes that the pixel electrode serves as the anode and the common electrode as the cathode, unless otherwise specified. The organic compound layers 103R, 103G, and 103B are island-shaped layers that are independent of each other based on a light-emitting device or on an emission color. By providing the island-shaped organic compound layer 103 in each of the light-emitting devices 130, leakage current between adjacent light-emitting devices 130 can be prevented, even in a high-resolution display. This can prevent crosstalk, thus enabling a display with very high contrast. In particular, a display with high power efficiency at low luminance can be obtained. The island-shaped organic compound layer 103 is formed by forming an EL film and processing the EL film by a lithographic process. In the display device of an embodiment of the present invention, the first electrode (pixel electrode) of the light-emitting device preferably has a multilayer structure. For example, in the example shown in Fig. 3B, the first electrode of the light-emitting device 130 is a layered arrangement of the conductive layer 151 and the conductive layer 152. In the case where, for example, the display device 100 is a top-emission type and the pixel electrode of the light-emitting device 130 serves as the anode, the conductive layer 151 preferably has a high reflectivity for visible light, and the conductive layer 152 preferably has a transmittance property for visible light and a high work function.The higher the visible light reflectance of the pixel electrode, the higher the light extraction efficiency of the light emitted by the organic compound layer 103, provided the display device 100 is a top-emission type. Conversely, the higher the work function of the pixel electrode, the easier it is to inject holes into the organic compound layer 103 when the pixel electrode acts as the anode. Consequently, if the pixel electrode of the light-emitting device 130 is a layer arrangement consisting of the conductive layer 151 with high visible light reflectance and the conductive layer 152 with high work function, the light-emitting device 130 can exhibit high light extraction efficiency and a low operating voltage. In the case where the conductive layer 151 has a high reflectivity for visible light, the reflectivity for visible light of the conductive layer 151 is preferably higher than or equal to 40% and lower than or equal to 100%, or higher than or equal to 70% and lower than or equal to 100%. If the conductive layer 152 is used as an electrode with a transmittance property for visible light, it preferably has, for example, a transmittance for visible light of higher than or equal to 40%. If such a pixel electrode is a layered arrangement consisting of a large number of layers, the quality of which could change, for example, as a result of a reaction between the layers. For instance, if a film formed after the pixel electrode is created is removed by a wet etching process, contact with the pixel electrode by a chemical solution could cause galvanic corrosion. In light of the foregoing, an insulating layer 156 is formed on the side surfaces of the conductive layers 151 and 152 in the display device 100 of this embodiment. This prevents a chemical solution from coming into contact with the conductive layer 151, for example, when a film formed after the formation of the pixel electrode, which comprises the conductive layer 151 and the conductive layer 152, is removed by a wet etching process. Accordingly, the occurrence of galvanic corrosion in the pixel electrode, for example, can be prevented. This allows the display device 100 to be manufactured using a high-yield process and is therefore cost-effective. Furthermore, the generation of defects in the display device 100 can be prevented, making the display device 100 highly reliable. A metallic material can be used, for example, for the conductive layer 151. In particular, it is possible to use, for example, a metal such as aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), or neodymium (Nd), or an alloy containing a suitable combination of any of these metals. For the conductive layer 152, an oxide containing one or more selected elements from indium, tin, zinc, gallium, titanium, aluminum, and silicon can be used. For example, a conductive oxide comprising one or more elements of indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, titanium oxide, indium zinc oxide containing gallium, indium zinc oxide containing aluminum, indium tin oxide containing silicon, indium zinc oxide containing silicon, and the like is preferably used. In particular, an indium tin oxide containing silicon can be used suitablely for the conductive layer 152 because it has a work function of 4.0 eV or higher. The conductive layer 151 and the conductive layer 152 can each be a layer arrangement consisting of multiple layers containing different materials. In this case, the conductive layer 151 can include a layer formed using a material that can be used for the conductive layer 152, such as a conductive oxide. Furthermore, the conductive layer 152 can include a layer formed using a material that can be used for the conductive layer 151, such as a metallic material. If the conductive layer 151 is a layer arrangement of two or more layers, for example, a layer in contact with the conductive layer 152 can be formed using a material that can be used for the conductive layer 152. It should be noted that an end section of the insulating layer 156 may have a tapered shape. In particular, if the end section of the insulating layer 156 has a tapered shape with a taper angle of less than 90°, the coverage can be improved by a component provided along the side surface of the insulating layer 156. The structure described in this embodiment can be used in a suitable combination with any of the structures described in other embodiments. (Version 4) This embodiment describes a light-receiving device of an embodiment of the present invention. The light-receiving device of an embodiment of the present invention has a function for detecting light (hereinafter also referred to as the light-receiving function). Figures 4A to 4C are each a schematic cross-sectional view of a light-receiving device 200 of an embodiment of the present invention. <<Grundlegende Struktur einer Licht empfangenden Vorrichtung> > The basic structures of the light-receiving device are described. Fig. 4A shows the light-receiving device 200, which includes at least one light-receiving layer 203, comprising an active layer and a charge carrier transport layer, between a pair of electrodes. In particular, an EL layer 203 is arranged between the first electrode 201 and the second electrode 202. Fig. 4B shows a multilayer structure of the light-receiving layer 203 in the light-receiving device 200 of an embodiment of the present invention. The light-receiving layer 203 has a structure in which a first charge carrier transport layer 212, an active layer 213 and a second charge carrier transport layer 214 are arranged sequentially over the first electrode 201. Fig. 4C shows a multilayer structure of the light-receiving layer 203 in the light-receiving device 200 of an embodiment of the present invention. The light-receiving layer 203 has a structure in which a first charge carrier injection layer 211, the first charge carrier transport layer 212, the active layer 213, the second charge carrier transport layer 214 and a second charge carrier injection layer 215 are arranged sequentially over the first electrode 201. The organic compound described in embodiment 1, which has an advantageous charge carrier transport property, in particular an excellent hole transport property, can be suitablely used for a charge carrier transport layer in a light-receiving device described in this embodiment. <<Konkrete Struktur der Licht empfangenden Vorrichtung> > Next, a specific structure of the light-receiving device 200 of an embodiment of the present invention will be described. This description will be given with reference to Fig. 4C. <Erste Elektrode und zweite Elektrode> The first electrode 201 and the second electrode 202 can be formed using materials that can be used for the first electrode 101 and the second electrode 102, which are described in embodiment 5. It should be noted that a microcavity structure can be obtained if, for example, the first electrode 201 is a reflective electrode and the second electrode 202 is a semi-transparent and semi-reflective electrode. The microcavity structure can amplify light of a specific wavelength to be detected, thereby creating a highly sensitive light-receiving device. <Erste Ladungsträgerinjektionsschicht> The first charge carrier injection layer 211 injects holes from the light-receiving layer 203 into the first electrode 201 and comprises a material with high hole injection properties. Examples of materials with high hole injection properties include an aromatic amine compound and a composite material containing a hole transport material and an acceptor material (electron acceptor material). The first charge carrier injection layer 211 can be formed using a material that can be used for the hole injection layer 111, which is described in embodiment 5. <Erste Ladungsträgertransportschicht> The first charge carrier transport layer 212 transports holes generated in the active layer 213 by incident light to the first electrode 201 and contains a hole transport material (also referred to as the first organic compound). The hole transport material preferably has a hole mobility of 1 × 10⁻⁶ cm² / Vs or higher. It should be noted that other substances can also be used, provided they have a hole transport property that is higher than their electron transport property. A π-electron-rich heteroaromatic compound or an aromatic amine (a compound with an aromatic amine skeleton) can be used as the hole transport material (first organic compound). Alternatively, a carbazole derivative, a thiophene derivative or a furan derivative can be used as the hole transport material (first organic compound). An aromatic monoamine compound or a heteroaromatic monoamine compound having at least one skeleton of biphenylamine, carbazolylamine, dibenzofuranylamine, dibenzothiophenylamine, fluorenylamine and spirofluorenylamine can be used as the hole transport material (first organic compound). Alternatively, an aromatic amine compound or a heteroaromatic amine compound having two or more skeletons selected from biphenylamine, carbazolylamine, dibenzofuranylamine, dibenzothiophenylamine, fluorenylamine and spirofluorenylamine can be used as the hole transport material (first organic compound). In the case where the hole transport material (first organic compound) is an aromatic monoamine compound or a heteroaromatic monoamine compound having two or more scaffolds selected from biphenylamine, carbazolylamine, dibenzofuranylamine, dibenzothiophenylamine, fluorenylamine, and spirofluorenylamine, a nitrogen atom can be shared by two or more scaffolds. For example, in the case where fluorene and biphenyl are bonded to a nitrogen atom of a monoamine in an aromatic monoamine compound, the compound can be considered an aromatic monoamine compound with a fluorenylamine scaffold and a biphenylamine scaffold. It should be noted that each of the biphenylamine, carbazolylamine, dibenzofuranylamine, dibenzothiophenylamine, fluorenylamine, and spirofluorenylamine listed above as scaffolds contained in the hole transport material (first organic compound) may have a substituent. Examples of substituents include a substituted or unsubstituted aryl group with 6 to 30 carbon atoms, a substituted or unsubstituted alkyl group with 1 to 20 carbon atoms, a substituted or unsubstituted cycloalkyl group with 1 to 20 carbon atoms, and a substituted or unsubstituted heteroaryl group with 4 to 30 carbon atoms. The hole transport material (the first organic compound) is preferably an amine compound with a triarylamine skeleton (it also contains a heteroaryl group or a carbazolyl group as an aryl group in a triarylamine compound). The first load carrier transport layer 212 can also be formed using a material that can be used for the hole transport layer 112, which is described in embodiment 5. The first charge carrier transport layer 212 is not limited to a single layer and can be a layer arrangement of two or more layers, each containing any one of the aforementioned substances; each of the layers can be a mixed layer containing two or more types of compounds. In the light-receiving device described in this embodiment, the active layer 213 can be formed using the same organic compound as the first charge carrier transport layer 212. The same organic compound is preferably used for both the first charge carrier transport layer 212 and the active layer 213, enabling efficient transport of charge carriers from the first charge carrier transport layer 212 to the active layer 213. <aktivschicht> The active layer 213 generates charge carriers based on incident light and contains a semiconductor. Examples of the semiconductor include an inorganic semiconductor, such as silicon, and an organic semiconductor containing an organic compound. In this embodiment, an example is described in which an organic semiconductor is used as the semiconductor contained in the active layer. An organic semiconductor is preferably used because the light-emitting layer and the active layer provided in the same device can be formed by the same process (such as a coating process or a vacuum evaporation process), and therefore the same fabrication equipment can be used. The active layer 213 contains at least one third organic compound and one fourth organic compound. Examples of the third organic compound include π-electron-rich heteroaromatic ring compounds and electron donor compounds, such as copper(II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthen (DBP), zinc phthalocyanine (ZnPc), tin phthalocyanine (SnPc) and quinacridone. Further examples of the third organic compound include a carbazole compound, a thiophene compound, a furan compound, and a compound with an aromatic amine skeleton. Other examples of the third organic compound include a naphthalene compound, an anthracene compound, a pyrene compound, a triphenylene compound, a fluorene compound, a pyrrole compound, a benzofuran compound, a benzothiophene compound, an indole compound, a dibenzofuran compound, a dibenzothiophene compound, an indolocarbazole compound, a porphyrin compound, a phthalocyanine compound, a naphthalocyanine compound, a quinacridone compound, a polyphenylenevinylene compound, a polyparaphenylene compound, a polyfluorene compound, a polyvinylcarbazole compound, and a polythiophene compound. Examples of the fourth organic compound include π-electron-deficient heteroaromatic ring compounds and electron-accepting compounds, such as a perylenetetracarboxylic acid diimide (PTCDI) compound, an oxadiazole compound, a triazole compound, an imidazole compound, an oxazole compound, a thiazole compound, a phenanthroline compound, a quinoline compound, a benzoquinoline compound, a quinoxaline compound, a dibenzoquinoxaline compound, a pyridine compound, a bipyridine compound, a pyrimidine compound, a naphthalene compound, an anthracene compound, a coumarin compound, a rhodamine compound, a triazine compound, a quinone compound, a metal complex with a quinoline framework, a metal complex with a benzoquinoline framework, a metal complex with an oxazole framework, and a metal complex with a thiazole framework. Examples of the fourth organic compound include organic semiconductor materials with electron-accepting properties, such as fullerene (e.g., C60 and C70) and fullerene compounds. Fullerene has a soccer ball-like shape, which is energetically stable. Both the HOMO and LUMO levels of fullerene are low. Because fullerene has a low LUMO level, it exhibits very high electron-accepting properties. When π-electron conjugation (resonance) spreads over a surface, as in benzene, electron-donating properties are usually increased; however, fullerene has a spherical shape and therefore exhibits high electron-accepting properties despite the extensive spread of π-electron conjugation within it. The high electron acceptance property efficiently causes rapid charge separation and is therefore useful for light-receiving devices.Both C60 and C70 exhibit a broad absorption band in the visible light region, and C70 is particularly preferred because it has a larger π-electron conjugation system and a broader absorption band in the long-wavelength region than C60. Other examples of fullerene compounds include [6,6]-phenyl-C71-butyric acid methyl ester (abbreviation: PC70BM), [6,6]-phenyl-C61-butyric acid methyl ester (abbreviation: PC60BM), and 1',1",4',4"-tetrahydro-di[1,4]methanonaphthaleno[1,2:2',3',56,60:2",3"][5,6]fullerene-C60 (abbreviation: ICBA). The active layer 213 is preferably a multilayer film consisting of a first layer containing the third organic compound and a second layer containing the fourth organic compound. In the light-receiving device, which has any of the aforementioned structures, the active layer 213 is preferably a mixed film containing the third organic compound and the fourth organic compound. The HOMO level of the organic semiconductor material with electron donor properties is preferably flatter (higher) than the HOMO level of the organic semiconductor material with electron acceptor properties. The LUMO level of the organic semiconductor material with electron donor properties is preferably flatter (higher) than the LUMO level of the organic semiconductor material with electron acceptor properties. Fullerene with a spherical shape can be used as an organic semiconductor material with electron-accepting properties, and an organic semiconductor material with a substantially planar shape can be used as an organic semiconductor material with electron-donating properties. There is a tendency for molecules with similar shapes to aggregate, and aggregated molecules of similar types, whose molecular orbital energy levels are close to each other, can enhance the charge carrier transport property. <Zweite Ladungsträgertransportschicht> The second charge carrier transport layer 214 transports electrons generated in the active layer 213 based on incident light to the second electrode 202 and contains an electron transport material (also referred to as the second organic compound). The electron transport material preferably has an electron mobility of 1 × 10⁻⁶ cm² / Vs or higher. It should be noted that other substances can also be used, provided they have an electron transport property that is higher than their hole transport property. A π-electron-deficient heteroaromatic compound can be used as the electron transport material (second organic compound). For example, any of the following materials can be used as the electron transport material (second organic compound): a metal complex with a quinoline framework, a metal complex with a benzoquinoline framework, a metal complex with an oxazole framework, a metal complex with a thiazole framework, an oxadiazole derivative, a triazole derivative, an imidazole derivative, an oxazole derivative, a thiazole derivative, a phenanthroline derivative, a quinoline derivative with a quinoline ligand, a benzoquinoline derivative, a quinoxaline derivative, a dibenzoquinoxaline derivative, a pyridine derivative, a bipyridine derivative, a pyrimidine derivative, and a π-electron-deficient heteroaromatic compound, such as a nitrogen-containing heteroaromatic compound. Alternatively, the electron transport material (second organic compound) is a compound with a triazine ring. The second charge carrier transport layer 214 can be formed using a material that can be used for the electron transport layer 114, which is described in embodiment 5. The second charge carrier transport layer 214 is not limited to a single layer and can be a layer arrangement of two or more layers, each containing any one of the aforementioned substances. <Zweite Ladungsträgerinjektionsschicht> The second charge carrier injection layer 215 is a layer for increasing the efficiency of electron injection from the light-receiving layer 203 into the second electrode 202 and contains a material with high electron injection properties. An alkali metal, an alkaline earth metal, or a compound thereof can be used as a material with high electron injection properties. A composite material containing an electron transport material and a donor material (electron donor material) can also be used as a material with high electron injection properties. The second charge carrier injection layer 215 can be formed using a material that can be used for the electron injection layer 115, which is described in embodiment 5. A structure in which a plurality of light-receiving layers are arranged one above the other between a pair of electrodes (the structure is also referred to as a tandem structure) can be obtained by providing a charge-generating layer between two light-receiving layers 203. Furthermore, three or more light-receiving layers can be arranged one above the other, with charge-generating layers provided between each adjacent light-receiving layer. The charge-generating layer can be formed using a material that can be used for the charge-generating layer 106 described in embodiment 2. Materials that can be used for the layers (the first charge carrier injection layer 211, the first charge carrier transport layer 212, the active layer 213, the second charge carrier transport layer 214 and the second charge carrier injection layer 215) contained in the light-receiving layer 203 of the light-receiving device described in this embodiment are not limited to the materials described in this embodiment, and other materials can be used in combination as long as the functions of the layers are ensured. It should be noted that in this description and the like, the terms "layer" and "film" may be interchanged as needed. It should be noted that the light-receiving device of an embodiment of the present invention has a function for detecting visible light. The light-receiving device of an embodiment of the present invention is sensitive to visible light. The light-receiving device of an embodiment of the present invention preferably has a function for detecting visible light and infrared light. The light-receiving device of an embodiment of the present invention preferably has sensitivity to visible light and infrared light. In this description and the like, a blue (B) wavelength range is greater than or equal to 400 nm and less than 490 nm, and blue (B) light has at least one peak in its emission spectrum within that wavelength range. A green (G) wavelength range is greater than or equal to 490 nm and less than 580 nm, and green (G) light has at least one peak in its emission spectrum within that wavelength range. A red (R) wavelength range is greater than or equal to 580 nm and less than 700 nm, and red (R) light has at least one peak in its emission spectrum within that wavelength range. In this description and the like, a wavelength range of visible light is greater than or equal to 400 nm and less than 700 nm, and visible light has at least one peak in its emission spectrum within that wavelength range.An infrared (IR) wavelength range is greater than or equal to 700 nm and less than 900 nm, and infrared (IR) light has at least one peak of the emission spectrum in that wavelength range. The light-receiving device of an embodiment of the present invention described above can be used for a display device that includes an organic EL device. In other words, the light-receiving device of an embodiment of the present invention can be incorporated into a display device that includes an organic EL device. As an example, Fig. 5A shows a schematic cross-sectional view of a light-emitting and light-receiving device 610 used as a display device, in which a light-emitting device 605a and a light-receiving device 605b are formed on the same substrate. The light-emitting and light-receiving device 610 includes the light-emitting device 605a and the light-receiving device 605b and therefore has, in addition to a function for displaying an image, an imaging function and / or a detection function. The light-emitting device 605a has a light-emitting function (hereinafter also referred to as the light-emitting function). The light-emitting device 605a includes an electrode 601a, an EL layer 603a, and an electrode 602. Therefore, the EL layer 603a, which is arranged between the electrode 601a and the electrode 602, includes at least one light-emitting layer. The light-emitting layer contains a light-emitting substance. The EL layer 603a emits light when a voltage is applied between the electrode 601a and the electrode 602. In addition to the light-emitting layer, the EL layer 603a can include any of the following different layers, such as... B. a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a charge carrier blocking layer (a hole blocking layer or an electron blocking layer) and a charge generation layer.For the light-emitting device 605a, a structure of the light-emitting device, which is an organic EL device as described in embodiment 5, can be used. The light-receiving device 605b has a function for detecting light (hereinafter also referred to as the light-receiving function). The light-emitting device 605b comprises an electrode 601b, a light-receiving layer 603b, and the electrode 602. The light-receiving layer 603b, which is arranged between the electrode 601b and the electrode 602, comprises at least one active layer. The light-receiving device 605b serves as a photoelectric conversion device; when light is incident on the light-receiving layer 603b, electric charges can be generated and extracted as current. At this time, a voltage can be applied between the electrode 601b and the electrode 602. The amount of electric charges generated depends on the amount of light incident on the light-receiving layer 603b.The structure of the light receiving device 200 described above can be used for the light receiving device 605b. The light-receiving device 605b, whose thickness and weight can be easily reduced, whose surface area can be easily increased, and which exhibits a high degree of freedom in shape and design, can be used in various display devices. Furthermore, the EL layer 603a contained in the light-emitting device 605a and the light-receiving layer 603b contained in the light-receiving device 605b can be formed by the same process (e.g., a vacuum evaporation process) using the same manufacturing equipment, which is preferable. Electrode 601a and electrode 601b are provided on the same plane. In Fig. 5A, electrodes 601a and 601b are provided over a substrate 600. Electrodes 601a and 601b can be formed, for example, by processing a conductive film formed over the substrate 600 into an island shape. In other words, electrodes 601a and 601b can be formed by the same process. Substrate 600 can be a substrate with a heat resistance high enough to withstand the formation of the light-emitting device 605a and the light-receiving device 605b. If an insulating substrate is used as substrate 600, a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, an organic resin substrate, or the like can be used. Alternatively, a semiconductor substrate can be used. For example, a monocrystalline or polycrystalline semiconductor substrate made of silicon, silicon carbide, or the like, a composite semiconductor substrate made of silicon germanium or the like, an SOI substrate, or the like can be used. Substrate 600 is particularly preferably an insulating substrate or a semiconductor substrate on which a semiconductor circuit, comprising a semiconductor device such as a transistor, is formed. The semiconductor circuit preferably forms a pixel circuit, a gate driver circuit, a source driver circuit, or the like. In addition to the above, an arithmetic circuit, a memory circuit, or the like may also be formed. The electrode 602 is formed from a layer that is shared by the light-emitting device 605a and the light-receiving device 605b. A conductive film that transmits visible and infrared light is used as the electrode through which light enters or exits. A conductive film that reflects visible and infrared light is preferably used as the electrode through which light neither enters nor exits. The electrode 602 in the display device of an embodiment of the present invention serves as one of the electrodes in each of the light-emitting device 605a and the light-emitting device 605b. In Fig. 5B, electrode 601a of the light-emitting device 605a has a potential higher than that of electrode 602. In this case, electrode 601a serves as the anode and electrode 602 as the cathode in the light-emitting device 605a. Electrode 601b of the light-receiving device 605b has a potential lower than that of electrode 602. For a better understanding of the direction of current flow, Fig. 5B shows a circuit symbol for a light-emitting diode (LED) on the left side of the light-emitting device 605a and a circuit symbol for a photodiode on the right side of the light-receiving device 605b. The directions of charge carrier flow (electrons and holes) in each device are also schematically indicated by arrows. In the structure shown in Fig. 5B, when a first potential is supplied to electrode 601a via a first line, a second potential is supplied to electrode 602 via a second line, and a third potential is supplied to electrode 601b via a third line, the following relationship is satisfied: the first potential > the second potential > the third potential. In Fig. 5C, electrode 601a of the light-emitting device 605a has a potential lower than that of electrode 602. In this case, electrode 601a serves as the cathode and electrode 602 as the anode in the light-emitting device 605a. Electrode 601b of the light-receiving device 605b has a potential lower than that of electrode 602 and a potential higher than that of electrode 601a. ​​For a better understanding of the direction of current flow, Fig. 5C shows a circuit symbol of a light-emitting diode (LED) on the left side of the light-emitting device 605a and a circuit symbol of a photodiode on the right side of the light-receiving device 605b. The directions of charge carrier flow (electrons and holes) in each device are also schematically indicated by arrows. In the structure shown in Fig. 5C, when a first potential is supplied to electrode 601a via a first line, a second potential is supplied to electrode 602 via a second line, and a third potential is supplied to electrode 601b via a third line, the following relationship is satisfied: the second potential > the third potential > the first potential. Fig. 6A shows a light-emitting and light-receiving device 610A, which is a variation of the light-emitting and light-receiving device 610. The light-emitting and light-receiving device 610A differs from the light-emitting and light-receiving device 610 in that it includes a common layer 606 and a common layer 607. In the light-emitting device 605a, the common layers 606 and 607 serve as part of the EL layer 603a. The common layer 606 includes, for example, a hole injection layer and a hole transport layer. The common layer 607 includes, for example, an electron transport layer and an electron injection layer. With the common layers 606 and 607, a light-receiving device can be incorporated without significantly increasing the number of separate colorations, thus enabling the production of the light-emitting and light-receiving device 610A with high yield. Fig. 6B shows a light-emitting and light-receiving device 610B, which is a variation of the light-emitting and light-receiving device 610. The light-emitting and light-receiving device 610B differs from the light-emitting and light-receiving device 610A in that the EL layer 603a comprises a layer 606a and a layer 607a, and the light-receiving layer 603b comprises a layer 606b and a layer 607b. The layers 606a and 606b are formed using different materials and each comprises, for example, a hole injection layer and a hole transport layer. It should be noted that the layers 606a and 606b can be formed using the same material.Layers 607a and 607b are formed using different materials and each comprises, for example, an electron transport layer and an electron injection layer. It should be noted that layers 607a and 607b can be formed using the same material. An optimal material for forming the light-emitting device 605a is selected for layers 606a and 607a, and an optimal material for forming the light-receiving device 605b is selected for layers 606b and 607b, whereby the light-emitting device 605a and the light-receiving device 605b in the light-emitting and light-receiving device 610B can exhibit higher performance. The resolution of pixels comprising the light-receiving device 605b can, for example, be higher than or equal to 100 ppi, preferably higher than or equal to 200 ppi, more preferably higher than or equal to 300 ppi, even more preferably higher than or equal to 400 ppi, and even more preferably higher than or equal to 500 ppi, and lower than or equal to 2000 ppi, lower than or equal to 1000 ppi, or lower than or equal to 600 ppi. In particular, when the light-receiving devices 605b are arranged with a resolution of higher than or equal to 200 ppi and lower than or equal to 600 ppi, preferably higher than or equal to 300 ppi and lower than or equal to 600 ppi, the light-emitting and light-receiving device of an embodiment of the present invention can be suitablely used for imaging a fingerprint.In fingerprint authentication using the light-emitting and light-receiving device 610, the high-resolution arrangement of the light-receiving device 605b enables, for example, the extraction of fingerprint minutiae with high accuracy; therefore, the accuracy of fingerprint authentication can be increased. The resolution is preferably higher than or equal to 500 ppi, in which case the authentication conforms to the standard of the National Institute of Standards and Technology (NIST) or the like. Assuming that the light-receiving devices are arranged with a resolution of 500 ppi, the size of each pixel is 50.8 µm, which is sufficient for imaging the spacing of fingerprint ridges (typically greater than or equal to 300 µm and less than or equal to 500 µm). The structures described in this embodiment can be used in a suitable combination with any of the structures described in the other embodiments. (Version 5) In this embodiment, specific structural examples of a light-emitting and light-receiving device of an embodiment of the present invention are described. <Strukturbeispiel der Licht emittierenden und Licht empfangenden Einrichtung 700> A light-emitting and light-receiving device 700 in Fig. 7A comprises a light-emitting device 550B, a light-emitting device 550G, a light-emitting device 550R, and a light-receiving device 550PS. The light-emitting device 550B, the light-emitting device 550G, the light-emitting device 550R, and the light-receiving device 550PS are formed over a functional layer 520 provided over a first substrate 510. The functional layer 520 includes, for example, circuits such as a circuit GD, consisting of a plurality of transistors, and conductors that electrically connect these circuits.It should be noted that these driver circuits are electrically connected to, for example, the light-emitting device 550B, the light-emitting device 550G, the light-emitting device 550R, and the light-receiving device 550PS for operation. The light-emitting and light-receiving device 700 includes an insulating layer 705 over the functional layer 520 and the devices (the light-emitting devices and the light-receiving device), and the insulating layer 705 has a function for attaching a second substrate 770 and the functional layer 520. The light-emitting device 550B, the light-emitting device 550G, the light-emitting device 550R, and the light-receiving device 550PS each have any one of the device structures described in embodiments 2 to 4. Here, we describe the case in which the light-emitting devices have any one of the structures shown in Figures 2A to 2E, and the light-receiving device has the structure shown in Figure 4B. It should be noted that the light-emitting and light-receiving devices shown in Figures 2A to 2E are not the same as the light-emitting devices shown in Figure 4B.Figure 4B shows a structure in which parts of the EL layer (the hole injection layer, the hole transport layer and the electron transport layer) of the light-emitting device and parts of the active layer (the first transport layer and the second transport layer) of the light-receiving device are formed simultaneously using the same material in a manufacturing process; meanwhile, this embodiment describes a case in which a separation can be carried out not only between the light-emitting device and the light-receiving device, but also between all devices (the light-emitting devices and the light-receiving device). In this description and the like, a structure in which light-emitting layers in light-emitting devices of different colors (e.g., blue (B), green (G), and red (R)) and a light-receiving layer in a light-receiving device are formed or structured separately is, in some cases, referred to as a side-by-side (SBS) structure. Although the light-emitting device 550B, the light-emitting device 550G, the light-emitting device 550R, and the light-receiving device 550PS are arranged in this order in the light-emitting and light-receiving device 700 shown in Fig. 7A, an embodiment of the present invention is not limited to this structure.For example, in the light-emitting and light-receiving device 700, these devices can be arranged in the following order: the light-emitting device 550R, the light-emitting device 550G, the light-emitting device 550B and the light-receiving device 550PS. In Fig. 7A, the light-emitting device 550B includes an electrode 551B, an electrode 552, and the organic compound layer 103B. The light-emitting device 550G includes an electrode 551G, the electrode 552, and the organic compound layer 103G. The light-emitting device 550R includes an electrode 551R, the electrode 552, and the organic compound layer 103R. The light-receiving device 550PS includes an electrode 551PS, the electrode 552, and a light-receiving layer 103PS. It should be noted that a specific structure of each layer of the light-receiving device is described as in embodiment 4. Furthermore, a specific structure of each layer of the light-emitting device is described as in embodiments 2 and 3.The organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R each have a multilayer structure consisting of layers with different functions, comprising their respective light-emitting layers (105B, 105G, and 105R). The light-receiving layer 103PS has a multilayer structure consisting of layers with different functions, comprising an active layer 105PS. Fig.7A represents a case in which the organic compound layer 103B comprises a hole injection / hole transport layer 104B, a light-emitting layer 105B, an electron transport layer 108B, and an electron injection layer 109; the organic compound layer 103G comprises a hole injection / hole transport layer 104G, a light-emitting layer 105G, an electron transport layer 108G, and an electron injection layer 109; the organic compound layer 103R comprises a hole injection / hole transport layer 104R, a light-emitting layer 105R, an electron transport layer 108R, and an electron injection layer 109; and the light-receiving layer 103PS comprises a first transport layer 104PS, the active layer 105PS, a second transport layer 108PS, and the electron injection layer 109. However, the present invention is not limited to this.It should be noted that each of the hole injection / hole transport layers (104B, 104G and 104R) represents a layer with the functions of the hole injection layer and the hole transport layer described in embodiment 2 and may have a multilayer structure. It should be noted that the electron transport layers (108B, 108G, and 108R) and the second transport layer 108PS may have a function of blocking holes that propagate from the anode side through the EL layers (103B, 103G, and 103R) and the light-receiving layer 103PS toward the cathode side. The electron injection layer 109 may have a multilayer structure in which some or all layers are formed using different materials. As shown in Fig. 7A, an insulating layer 107 can be formed on the side faces (or end sections) of the hole injection / hole transport layers (104B, 104G and 104R), the light-emitting layers (105B, 105G and 105R) and the electron transport layers (108B, 108G and 108R) contained in the EL layers (103B, 103G and 103R), and on the side faces (or end sections) of the first transport layer 104PS, the active layer 105PS and the second transport layer 108PS contained in the light-receiving layer 103PS. The insulating layer 107 is formed in contact with the side faces (or end sections) of the EL layers (103B, 103G and 103R) and the light-receiving layer 103PS. This can prevent the penetration of oxygen, moisture or constituent elements thereof through the side surface of the EL layers (103B, 103G and 103R) and the light-receiving layer 103PS into the interior.For the insulating layer 107, for example, aluminum oxide, magnesium oxide, hafnium oxide, gallium oxide, an indium gallium zinc oxide, silicon nitride, or silicon nitride oxide can be used. Some of the materials described above can be stacked on top of each other to form the insulating layer 107. The insulating layer 107 can be formed by a sputtering process, a CVD process, an MBE process, a PLD process, an ALD process, or the like, and is preferably formed by an ALD process, which achieves advantageous coverage. It should be noted that the insulating layer 107 continuously covers the side faces (or the end sections) of a portion of the EL layers (103B, 103G, and 103R) and a portion of the light-receiving layer 103PS of the adjacent devices. In Fig.For example, in Fig. 7A, the side surfaces of the organic compound layer 103B of the light-emitting device 550B and the organic compound layer 103G of the light-emitting device 550G are covered with an insulating layer 107BG. In an area covered with the insulating layer 107BG, a partition 528, preferably formed using an insulating material, is formed as shown in Fig. 7A. Furthermore, the electron injection layer 109 is formed above the electron transport layers (108B, 108G and 108R), which are parts of the EL layers (103B, 103G and 103R), the second transport layer 108PS, which is part of the light-receiving layer 103PS, and the insulating layer 107. It should be noted that the electron injection layer 109 can have a multilayer structure consisting of two or more layers (e.g., layers with different electrical resistances stacked on top of each other). Electrode 552 is formed above electron injection layer 109. It should be noted that electrodes 551B, 551G, and 551R and electrode 552 have overlapping regions. Light-emitting layer 105B is provided between electrode 551B and electrode 552, light-emitting layer 105G is provided between electrode 551G and electrode 552, light-emitting layer 105R is provided between electrode 551R and electrode 552, and light-receiving layer 103PS is provided between electrode 551PS and electrode 552. The EL layers (103B, 103G, and 103R) shown in Fig. 7A each have a structure similar to that of the organic compound layer 103 described in embodiment 2. The light-receiving layer 103PS has a structure similar to that of the light-receiving layer 203 described in embodiment 4. For example, the light-emitting layer 105B can emit blue light, the light-emitting layer 105G can emit green light, and the light-emitting layer 105R can emit red light. The partitions 528 and the insulating layer 107 are provided between a portion of the light-emitting device 550B, a portion of the light-emitting device 550G, a portion of the light-emitting device 550R, and a portion of the light-receiving device 550PS. As shown in Fig. 7A, the partitions 528 are in contact with the side faces (or end sections) of the electrodes (551B, 551G, 551R, and 551PS), portions of the EL layers (103B, 103G, and 103R), and a portion of the light-receiving layer 103PS, with the insulating layer 107 located between them. In each of the EL layers and the light-receiving layer, the hole injection layer, which is located in the hole transport region between the anode and the light-emitting layer and between the anode and the active layer, often exhibits high conductivity; therefore, a hole injection layer formed as a layer common to neighboring devices (the light-receiving device and the light-emitting device, the light-emitting devices or the light-receiving devices) could cause crosstalk.Therefore, as described in this structural example, the partitions 528, which are formed using an insulating material, are provided between adjacent layers below the EL layers and the light-receiving layers, which can prevent the occurrence of crosstalk between adjacent devices (between the light-receiving device and the light-emitting device, between the light-emitting devices or between the light-receiving devices). In cases where the manufacturing process includes a structuring step, the side faces (or end sections) of the EL layers and the light-receiving layer are exposed during the step. This can promote deterioration of the EL layer and the light-receiving layer by allowing the penetration of oxygen, water, or similar substances through the side faces (or end sections) of the EL layer and the light-receiving layer. Therefore, deterioration of the EL layer and the light-receiving layer during the manufacturing process can be prevented by providing the partition 528. By providing the partition 528, the surface can be made flat by reducing a depression formed between adjacent devices (between the light-receiving device and the light-emitting device, between the light-emitting devices, or between the light-receiving devices). Reducing the depression prevents conduction interruption of the electrode 552 formed across the EL layers and the light-receiving layer. Examples of insulating materials used to form the partition 528 include organic materials such as an acrylic resin, a polyimide resin, an epoxy resin, an imide resin, a polyamide resin, a polyimidamide resin, a silicone resin, a siloxane resin, a benzocyclobutene-based resin, a phenolic resin, and precursors of these resins. Other examples include organic materials such as...Polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, and an alcohol-soluble polyamide resin. A photosensitive resin, such as a photoresist, can also be used. Examples of photosensitive resins include positive and negative materials. Using the photosensitive resin, the partition 528 can be produced solely through exposure and development steps. The partition 528 can be produced using a negative photosensitive resin (e.g., a photoresist material). In the case where an insulating layer containing an organic material is used as the partition 528, a material that absorbs visible light is suitable. When such a visible light-absorbing material is used for the partition 528, light emission from the EL layer can be absorbed by the partition 528, resulting in a reduction of light leakage (scattered light) to an adjacent EL layer or light-receiving layer. Consequently, a display field with high display quality can be provided. For example, the difference between the height of the top surface of the partition 528 and the height of the top surface of any of the organic compound layer 103B, the organic compound layer 103G, the organic compound layer 103R, and the light-receiving layer 103PS is preferably 0.5 times or less, more preferably 0.3 times or less, the thickness of the partition 528. The partition 528 can, for example, be provided such that the height of the top surface of any of the organic compound layer 103B, the organic compound layer 103G, the organic compound layer 103R, and the light-receiving layer 103PS is greater than the height of the top surface of the partition 528.Alternatively, the partition 528 can be provided, for example, such that the height of the top of the partition 528 is higher than the height of the top of any of the organic compound layer 103B, the organic compound layer 103G, the organic compound layer 103R and the light-receiving layer 103PS. When the electrical connection between the organic compound layer 103B, the organic compound layer 103G, the organic compound layer 103R, and the light-receiving layer 103PS is established in a light-emitting and light-receiving device (a display panel) with a high resolution of more than 1000 ppi, crosstalk occurs, resulting in a narrower color gamut that the light-emitting and light-receiving device can reproduce. By providing the partition 528 in a display panel with a high resolution of more than 1000 ppi, preferably more than 2000 ppi, or more preferably in an ultra-high-resolution display panel with more than 5000 ppi, the display panel can reproduce intense colors. Figures 7B and 7C are each a schematic top view of the light-emitting and light-receiving device 700 along the dashed-dotted line Ya-Yb in the cross-sectional view of Figure 7A. In particular, the light-emitting device 550B, the light-emitting device 550G, and the light-emitting device 550R are arranged in a matrix. It should be noted that Figure 7B shows a so-called stripe arrangement, in which the light-emitting devices of the same color are arranged in the X direction. Figure 7C shows a structure in which the light-emitting devices of the same color are arranged in the Y direction and are separated by a structuring for each pixel. It should be noted that the arrangement method of the light-emitting devices is not limited to this; other methods, such as a delta, zigzag, PenTile, or diamond arrangement, can also be used. The EL layers (organic compound layer 103B, organic compound layer 103G, and organic compound layer 103R) and the light-receiving layer 103PS are processed such that they are separated by structuring using a photolithographic process; thus, a high-resolution light-emitting and light-receiving device (display panel) can be fabricated. The end sections (the side faces) of the EL layer and the layers of the light-receiving layer 103PS, which are processed by structuring using a photolithographic process, have substantially the same surface (or are arranged on substantially the same plane). In this case, the widths (SE) of gaps 580 between adjacent layers under the EL layers and the light-receiving layers are preferably less than or equal to 5 µm, more preferably less than or equal to 1 µm. In the EL layer, the hole injection layer, located in the hole transport region between the anode and the light-emitting layer, often exhibits high conductivity; therefore, a hole injection layer common to adjacent light-emitting devices could cause crosstalk. For this reason, crosstalk between adjacent light-emitting devices can be prevented by processing the EL layers in such a way that they are separated by structuring using a photolithographic process, as described in this structural example. Fig. 7D is a schematic cross-sectional view along the dashed-dotted line C1-C2 in Fig. 7B and Fig. 7C. Fig. 7D shows a connection section 132 in which a connecting electrode 551C and the electrode 552 are electrically connected. In the connection section 132, the electrode 552 is positioned above and in contact with the connecting electrode 551C. The partition 528 is positioned such that it covers an end section of the connecting electrode 551C. (Version 6) In this embodiment, a light-emitting and light-receiving device 720 is described with reference to Figures 8A to 8F, 9A to 9C, and 10. The light-emitting and light-receiving device 720 shown in Figures 8A to 8F, 9A to 9C, and 10 includes any of the light-receiving and light-emitting devices described in embodiments 4 and 5, and is therefore a light-emitting and light-receiving device. Furthermore, the light-emitting and light-receiving device 720 described in this embodiment can be used in a display section of an electronic device or the like and can therefore also be referred to as a display panel or display device.Furthermore, the light-emitting and light-receiving device has a structure in which the light-emitting device is used as the light source and the light-receiving device receives light from the light-emitting device. Furthermore, the light-emitting and light-receiving device of this embodiment can have a high resolution or a large size. Therefore, the light-emitting and light-receiving device of this embodiment can be used, for example, in display sections of electronic devices such as a digital camera, a digital video camera, a digital photo frame, a mobile phone, a portable game console, a smartphone, a wristwatch-like device, a tablet computer, a portable information terminal, and an audio playback device, in addition to display sections of electronic devices with a relatively large screen, such as a television, a desktop or laptop PC, a computer monitor, or the like, digital signage, and a large gaming machine, such as a pinball machine. Fig. 8A is a top view of the light-emitting and light-receiving device 720. In Fig. 8A, the light-emitting and light-receiving device 720 has a structure in which a substrate 710 and a substrate 711 are attached to one another. The light-emitting and light-receiving device 720 also includes a display area 701, a circuit 704, a line 706, and the like. It should be noted that the display area 701 includes a plurality of pixels. As shown in Fig. 8B, a pixel 703(i, j), which is shown in Fig. 8A, and a pixel 703(i+1, j) are adjacent to each other. Furthermore, in the example of the light-emitting and light-receiving device 720 shown in Fig. 8A, the substrates 710 are provided with an integrated circuit (IC) 712 by a chip-on-glass (COG) process, a chip-on-film (COF) process, or the like. For example, IC 712 can be an IC comprising a sampling line driver circuit, a signal line driver circuit, or the like. In the example shown in Fig. 8A, an IC comprising a signal line driver circuit is used as IC 712, and a sampling line driver circuit is used as circuit 704. Line 706 serves to supply signals and current to the display area 701 and the circuit 704. The signals and current are supplied externally to line 706 via a flexible printed circuit (FPC) 713 or from the IC 712 to line 706. It should be noted that the light-emitting and light-receiving device 720 is not necessarily equipped with the IC. The IC can be mounted on the FPC by a COF process or the like. Fig. 8B shows pixel 703(i, j) and pixel 703(i+1, j) of display field 701. A variety of subpixel types, including light-emitting devices that emit light of different colors, can be contained in 703(i, j). Alternatively, in addition to those described above, a variety of subpixels, including light-emitting devices that emit light of the same color, can be contained. For example, the pixel can contain three types of subpixels. The three subpixels can, for example, include three colors of red (R), green (G), and blue (B), or three colors of yellow (Y), cyan (C), and magenta (M). Alternatively, the pixel can contain four types of subpixels. The four subpixels can, for example, include four colors of R, G, B, and white (W), or four colors of R, G, B, and yellow (Y).In particular, the pixel 703(i, j) can consist of a subpixel 702B(i, j) for blue display, a subpixel 702G(i, j) for green display and a subpixel 702R(i, j) for red display. In addition to the subpixels that comprise the light-emitting devices, a subpixel that comprises a light-receiving device can also be provided. Figures 8C to 8F show different layout examples of pixel 703(i, j), which contains a subpixel 702PS(i, j) that includes a light-receiving device. The pixel arrangement in Figure 8C is a stripe arrangement, and the pixel arrangement in Figure 8D is a matrix arrangement. The pixel arrangement in Figure 8E has a structure in which three subpixels (subpixels R, G, and PS) are arranged vertically next to a subpixel (subpixel B). In the pixel arrangement in Figure 8F, the three vertically oriented subpixels G, B, and R are arranged laterally, and subpixel PS and the horizontally oriented subpixel IR are arranged laterally below the three subpixels.It should be noted that the wavelength of light detected by subpixel 702PS(i, j) is not particularly limited; however, the light-receiving device contained in subpixel 702PS(i, j) preferably has a sensitivity to light emitted by the light-emitting device contained in subpixel 702R(i, j), subpixel 702G(i, j), subpixel 702B(i, j), or subpixel 702IR(i, j). For example, the light-receiving device preferably detects one or more types of light in a blue, violet, blue-violet, green, yellow-green, yellow, orange, red, and infrared wavelength range. Furthermore, as shown in Fig. 8F, the subpixel 702IR(i, j), which emits infrared rays, can be added to any of the sets of subpixels described above in pixel 703(i, j). In particular, the subpixel that emits light comprising light with a wavelength greater than or equal to 650 nm and less than or equal to 1000 nm can be used in pixel 703(i, j). It should be noted that the arrangement of subpixels is not limited to the structures shown in Figures 8B to 8F and various arrangement methods can be used. For example, the subpixel arrangement can be a stripe arrangement, an S-stripe arrangement, a matrix arrangement, a delta arrangement, a Bayer arrangement, or a PenTile arrangement. Furthermore, the top surfaces of subpixels can, for example, have a triangular shape, a quadrilateral shape (including rectangular and square shapes), a polygonal shape, such as a pentagonal shape, a polygonal shape with rounded corners, an elliptical shape, or a circular shape. Here, the top surface shape of a subpixel refers to the top surface shape of a light-emitting area of ​​a light-emitting device. Furthermore, if a pixel contains not only a light-emitting device but also a light-receiving device, the pixel has a light-receiving function and can therefore detect contact or the approach of an object while displaying an image. For example, an image can be displayed using all the subpixels contained in a light-emitting device; or light can be emitted by some of the subpixels as a light source, and an image can be displayed using the remaining subpixels. It should be noted that the light-receiving area of ​​subpixel 702PS(i, j) is preferably smaller than the light-emitting areas of the other subpixels. A smaller light-receiving area results in a narrower imaging area, prevents blurring in a captured image, and improves image sharpness. Therefore, using subpixel 702PS(i, j) enables high-resolution imaging or high image sharpness. For example, imaging for personal authentication using a fingerprint, palm print, iris, the shape of a blood vessel (including the shape of a vein and the shape of an artery), a face, or the like is possible using subpixel 702PS(i, j). Furthermore, the 702PS(i, j) subpixel can be used in a touch sensor (also known as a direct touch sensor), a near-touch sensor (also known as a hover sensor, hover touch sensor, contactless sensor, or non-contact sensor), or the like. For example, the 702PS(i, j) subpixel preferentially detects infrared light. Therefore, a touch can be detected even in a dark environment. Here, the touch sensor or near-touch sensor can detect the approach or contact of an object (e.g., a finger, hand, or pen). The touch sensor can detect the object when the light-emitting and light-receiving device and the object come into direct contact. Furthermore, the near-touch sensor can detect the object even when it is not in contact with the light-emitting and light-receiving device. For example, the light-emitting and light-receiving device can preferably detect the object when the distance between the light-emitting and light-receiving device and the object is greater than or equal to 0.1 mm and less than or equal to 300 nm, preferably greater than or equal to 3 mm and less than or equal to 50 mm.This structure allows the light-emitting and light-receiving device to be controlled without the object coming into direct contact with it. In other words, the light-emitting and light-receiving device can be controlled in a contactless (touchless) manner. With the structure described above, the light-emitting and light-receiving device can be operated with a reduced risk of becoming dirty or damaged, or without direct contact between the object and any contaminants (e.g., dust, bacteria, or viruses) adhering to the light-emitting and light-receiving device. For high-resolution imaging, the 702PS(i, j) subpixel is preferably provided in every pixel contained in the light-emitting and light-receiving device. However, when the 702PS(i, j) subpixel is used in a touch sensor, near-touch sensor, or the like, high accuracy is not required compared to imaging a fingerprint or similar; consequently, the 702PS(i, j) subpixel is provided in some subpixels within the light-emitting and light-receiving device. If the number of 702PS(i, j) subpixels contained in the light-emitting and light-receiving device is smaller than the number of 702R(i, j) subpixels, higher recognition speeds can be achieved. Next, an example of a pixel circuit of a subpixel, which includes the light-emitting device, is described with reference to Fig. 9A. A pixel circuit 530, shown in Fig. 9A, includes a light-emitting device (EL) 550, a transistor M15, a transistor M16, a transistor M17, and a capacitor C3. It should be noted that a light-emitting diode can be used as the light-emitting device 550. In particular, preferably any of the light-emitting devices described in embodiments 2 and 3 is used as the light-emitting device 550. In Fig. 9A, one gate of transistor M15 is electrically connected to a line VG, one source and drain terminal of transistor M15 is electrically connected to a line VS, and the other source and drain terminal of transistor M15 is electrically connected to an electrode of capacitor C3 and a gate of transistor M16. One source and drain terminal of transistor M16 is electrically connected to a line V4, and the other terminal is electrically connected to an anode of light-emitting device 550 and a source and drain terminal of transistor M17. One gate of transistor M17 is electrically connected to a line MS, and the other source and drain terminal of transistor M17 is electrically connected to a line OUT2. A cathode of light-emitting device 550 is electrically connected to a line V5. A constant potential is applied to lines V4 and V5. In the light-emitting device 550, the anode side can have a high potential, and the cathode side can have a potential lower than that of the anode side. Transistor M15 is controlled by a signal applied to line VG and serves as a selector transistor for controlling a selected state of the pixel circuit 530. Transistor M16 serves as a driver transistor, controlling the current flowing through the light-emitting device 550 according to a potential applied to its gate. When transistor M15 is switched on, a potential applied to line VS is applied to the gate of transistor M16, and the luminance of the light-emitting device 550 can be controlled according to this potential.The transistor M17 is controlled by a signal supplied to the MS line and has a function to output a potential between the transistor M16 and the light-emitting device 550 to the outside via the OUT2 line. Here, a transistor is used in which a metal oxide (an oxide semiconductor) is used in a semiconductor layer in which a channel is formed, preferably as each of the transistors M15, M16 and M17 included in the pixel circuit 530 in Fig. 9A, and transistors M11, M12, M13 and M14 included in a pixel circuit 531 in Fig. 9B. A transistor with a metal oxide, which has a larger band gap and a lower charge carrier density than silicon, can achieve a very low reverse current. Such a low reverse current allows charges accumulated in a capacitor connected in series with the transistor to be retained for a long time. Therefore, it is particularly preferred that a transistor containing an oxide semiconductor be used as transistors M11, M12, and M15, each connected in series with either capacitor C2 or capacitor C3. If the other transistors also each contain an oxide semiconductor, the manufacturing costs can be reduced. Alternatively, transistors containing silicon as the semiconductor in which a channel is formed can be used, such as any of the transistors M11 to M17. It is particularly preferred that silicon with high crystallinity, such as monocrystalline or polycrystalline silicon, be used, as this allows for high field-effect mobility and higher-speed operation. Alternatively, a transistor containing an oxide semiconductor can be used as at least one of the transistors M11 to M17, and transistors containing silicon can be used as the other transistors. Next, an example of a subpixel pixel circuit, including a light-receiving device, is described with reference to Fig. 9B. The pixel circuit 531 shown in Fig. 9B includes a light-receiving device (PD) 560, transistor M11, transistor M12, transistor M13, transistor M14, and capacitor C2. In the example shown here, a photodiode is used as the light-receiving device (PD) 560. In Fig. 9B, an anode of the light-receiving device (PD) 560 is electrically connected to a line V1, and a cathode of the light-receiving device (PD) 560 is electrically connected to a source and drain terminal of transistor M11. A gate of transistor M11 is electrically connected to a line TX, and the other source and drain terminal of transistor M11 is electrically connected to an electrode of capacitor C2, a source and drain terminal of transistor M12, and a gate of transistor M13. A gate of transistor M12 is electrically connected to a line RES, and the other source and drain terminal of transistor M12 is electrically connected to a line V2.One source and drain terminal of transistor M13 is electrically connected to line V3, and the other source and drain terminal of transistor M13 is electrically connected to one source and drain terminal of transistor M14. One gate of transistor M14 is electrically connected to line SE, and the other source and drain terminal of transistor M14 is electrically connected to line OUT1. Lines V1, V2, and V3 are supplied with a constant potential. When the light-receiving device (PD) 560 is operated with a reverse bias, line V2 is supplied with a potential higher than the potential of line V1. Transistor M12 is controlled by a signal supplied to line RES and has a function to reset the potential of a node connected to the gate of transistor M13 to the potential supplied to line V2. Transistor M11 is controlled by a signal supplied to line TX and has a function to control the timing at which the potential of the node changes in accordance with a current flowing through the light-receiving device (PD) 560. Transistor M13 acts as an amplifier transistor to output a signal corresponding to the potential of the node.Transistor M14 is controlled by a signal supplied to line SE and acts as a selection transistor for reading an output equal to the potential of the node by an external circuit connected to line OUT1. Although n-channel transistors are shown in Fig. 9A and Fig. 9B, p-channel transistors can be used alternatively. The transistors contained in pixel circuit 530 and the transistors contained in pixel circuit 531 are preferably arranged side by side on the same substrate. It is particularly preferred that the transistors contained in pixel circuit 530 and the transistors contained in pixel circuit 531 are arranged periodically in a region. Preferably, one or more layers comprising the transistor and / or the capacitor are provided such that they overlap with the light-receiving device (PD) 560 or the light-emitting device (EL) 550. Therefore, the effective area occupied by each pixel circuit can be reduced, and a high-resolution light-receiving section or display section can be obtained. Fig. 9C shows an example of a specific transistor structure that can be used in the pixel circuit described with reference to Fig. 9A and Fig. 9B. A bottom-gate transistor, a top-gate transistor, or the like can be used as needed. The transistor in Fig. 9C comprises a semiconductor film 508, a conductive film 504, an insulating film 506, a conductive film 512A, and a conductive film 512B. The transistor is formed, for example, over an insulating film 501C. The transistor also includes an insulating film 516 (an insulating film 516A and an insulating film 516B) and an insulating film 518. The semiconductor film 508 comprises a region 508A, which is electrically connected to the conductive film 512A, and a region 508B, which is electrically connected to the conductive film 512B. The semiconductor film 508 comprises a region 508C between region 508A and region 508B. The conductive film 504 includes an area that overlaps with area 508C and has a gate electrode function. The insulating film 506 comprises a region situated between the semiconductor film 508 and the conductive film 504. The insulating film 506 functions as a first gate insulating film. The conductive film 512A has a function as a source electrode or a function as a drain electrode, and the conductive film 512B has the function of the other. A conductive film 524 can be used in the transistor. The semiconductor film 508 is arranged between the conductive film 504 and a region contained within the conductive film 524. The conductive film 524 functions as a second gate electrode. An insulating film 501D is arranged between the semiconductor film 508 and the conductive film 524 and also functions as a second gate insulating film. The insulating film 516 serves, for example, as a protective film covering the semiconductor film 508. In particular, for example, a film comprising a silicon oxide film, a silicon oxynitride film, a silicon nitride oxide film, a silicon nitride film, an aluminum oxide film, a hafnium oxide film, a yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, or a neodymium oxide film can be used as the insulating film 516. For the insulating film 518, a material is preferably used that has a function of preventing the diffusion of oxygen, hydrogen (including deuterium), water, an alkali metal, an alkaline earth metal, and the like. In particular, the insulating film 518 can be formed, for example, using silicon nitride, silicon oxynitride, aluminum nitride, or aluminum oxynitride. In both silicon oxynitride and aluminum oxynitride, the number of nitrogen atoms is preferably greater than the number of oxygen atoms. It should be noted that in one step to form the semiconductor film used in the transistor of the pixel circuit, the semiconductor film used in the transistor of the driver circuit can also be formed. For example, a semiconductor film with the same composition as the semiconductor film used in the transistor of the pixel circuit can be used in the driver circuit. For semiconductor film 508, a semiconductor containing an element of group 14 can be used. In particular, a semiconductor containing silicon can be used for semiconductor film 508. Hydrogenated amorphous silicon can be used for semiconductor film 508. Microcrystalline silicon or the like can also be used for semiconductor film 508. In such cases, for example, a setup with less display non-uniformity than a setup (including a light-emitting device, a display panel, a display device, and a light-emitting and light-receiving device) using polysilicon for semiconductor film 508 can be provided. Furthermore, it is easy to increase the size of the setup. Polysilicon can be used for the 508 semiconductor film. In this case, for example, the field-effect mobility of the transistor can be higher than that of a transistor using hydrated amorphous silicon for the 508 semiconductor film. As another example, the driver capability can be higher than that of a transistor using hydrated amorphous silicon for the 508 semiconductor film. As yet another example, the pixel aperture ratio can be higher than that of a transistor using hydrated amorphous silicon for the 508 semiconductor film. As another example, the reliability of the transistor can be higher than that of a transistor that uses hydrogenated amorphous silicon for the semiconductor film 508. The temperature required to manufacture the transistor can, for example, be lower than that required to manufacture a transistor using single-crystal silicon. The semiconductor film used in the transistor of the driver circuit can be formed in the same step as the semiconductor film used in the transistor of the pixel circuit. The driver circuit can be formed on top of a substrate on which the pixel circuit is formed. This reduces the number of components in an electronic device. Single-crystal silicon can be used for semiconductor film 508. In this case, for example, the resolution can be higher than that of a light-emitting device (or display panel) using hydrogenated amorphous silicon for semiconductor film 508. Another example is a light-emitting device that exhibits less display non-uniformity than one using polysilicon for semiconductor film 508. Other examples include smart glasses or head-mounted displays. A metal oxide can be used for the semiconductor film 508. In this case, the pixel circuit can maintain an image signal for a longer time than a pixel circuit containing a transistor where amorphous silicon is used for the semiconductor film. In particular, a selection signal with a frequency of less than 30 Hz, preferably less than 1 Hz, and preferably less than once per minute, can be applied while suppressing flicker. Consequently, user fatigue can be reduced. Furthermore, the power consumption during operation can be reduced. An oxide semiconductor can be used for semiconductor film 508. In particular, an oxide semiconductor containing indium, an oxide semiconductor containing indium, gallium and zinc, or an oxide semiconductor containing indium, gallium, zinc and tin can be used for semiconductor film 508. The use of an oxide semiconductor for the semiconductor film results in a transistor that exhibits a lower leakage current in the off-state than a transistor using amorphous silicon for the semiconductor film. Therefore, a transistor using an oxide semiconductor for the semiconductor film is preferably used as a switch or similar device. It should be noted that a circuit using a transistor with an oxide semiconductor for the semiconductor film as a switch can maintain the potential of a floating node for a longer time than a circuit using a transistor with amorphous silicon for the semiconductor film as a switch. In the case where an oxide semiconductor is used for a semiconductor film, the light-emitting and light-receiving device 720 includes a light-emitting device that incorporates an oxide semiconductor in its semiconductor film and has a metal-maskless (MML) structure. With this structure, the leakage current that could flow through the transistor and the leakage current that could flow between adjacent light-emitting devices (also called lateral leakage current, side leakage current, or the like) can be made very low. With this structure, a viewer can perceive one or more of the crispness of an image, the sharpness of an image, high color saturation, and a high contrast ratio in an image displayed on the display device.If the leakage current that could flow through the transistor and the lateral leakage current that could flow between light-emitting devices are very low, a low light leakage display at black (so-called black floating) (such a display is also referred to as a deep black display) can be achieved. In particular, in the case where the SBS structure described above is used in a light-emitting device with an MML structure, a layer provided between light-emitting devices (for example, also as an organic compound layer or common layer generally used between the light-emitting devices) is separated; consequently, the indication can be achieved with no or very low lateral leakage current. Next, a cross-sectional view of a light-emitting and light-receiving device is shown. Fig. 10 is a cross-sectional view of the light-emitting and light-receiving device shown in Fig. 8A. Fig. 10 is a cross-sectional view of part of the display area 701, which includes the pixel 703(i, j), and part of an area, which includes the FPC 713 and the line 706. In Fig. 10, the light-emitting and light-receiving device 720 includes the functional layer 520 between the first substrate 510 and the second substrate 770. In addition to the transistors (M11, M12, M13, M14, M15, M16, and M17), the capacitor (C2 and C3), and the like, which are described with reference to Figs. 9A to 9C, the functional layer 520 includes, for example, conductors (VS, VG, V1, V2, V3, V4, and V5) that are electrically connected to these components. Although in Fig. 10 the functional layer 520 includes a pixel circuit 530X(i, j), a pixel circuit 530S(i, j), the driver circuit GD, a circuit RD, a circuit RC, and a conductor CP, an embodiment of the present invention is not limited thereto. Furthermore, each pixel circuit (e.g., pixel circuit 530X(i, j) and pixel circuit 530S(i, j) in Fig. 10) contained in the functional layer 520 is electrically connected to a light-emitting device and a light-receiving device (e.g., light-emitting device 550X(i, j) and light-receiving device 550S(i, j) in Fig. 10) formed above the functional layer 520. In particular, the light-emitting device 550X(i, j) is electrically connected to the pixel circuit 530X(i, j) via a line 591X, and the light-receiving device 550S(i, j) is electrically connected to the pixel circuit 530S(i, j) via a line 591S. The insulating layer 705 is provided above the functional layer 520, the light-emitting devices and the light-receiving device and has a function for attaching the second substrate 770 and the functional layer 520. A second substrate 770 can be a substrate in which touch sensors are arranged in a matrix. For example, a substrate equipped with capacitive touch sensors or optical touch sensors can be used as the second substrate 770. The light-emitting and light-receiving device of an embodiment of the present invention can therefore be used for a touchscreen. The structures described in this embodiment can be used in a suitable combination with any of the structures described in the other embodiments. (Version 7) In this embodiment, the structures of electronic devices of an embodiment of the present invention are described with reference to Figures 11 to 11E, 12A to 12E, 13A, and 13B. It should be noted that the electronic devices described in this embodiment may each include a light-emitting and a light-receiving device of an embodiment of the present invention. Figures 11 to 11E, 12A to 12E, 13A, and 13B each represent a structure of the electronic device of an embodiment of the present invention. Figure 11A is a block diagram of the electronic device, and Figures 11B to 11E are perspective views depicting structures of the electronic device. Figures 12A to 12E are perspective views depicting structures of the electronic device. Figures 13A and 13B are perspective views depicting structures of the electronic device. An electronic device 5200B, as described in this embodiment, includes an arithmetic device 5210 and an input / output device 5220 (see Fig. 11A). The arithmetic device 5210 has a function for receiving operating data and a function for supplying image data based on the operating data. The input / output device 5220 includes a display unit 5230, an input unit 5240, a capture unit 5250, and a communication unit 5290, and has a function for supplying operating data and a function for receiving image data. The input / output device 5220 also has a function for supplying capture data, a function for supplying communication data, and a function for receiving communication data. The 5240 input unit has a function for supplying operating data. For example, the 5240 input unit supplies operating data based on the operation of the 5200B electronic device by a user. In particular, a keyboard, a hardware button, a pointing device, a touch sensor, an illuminance sensor, an imaging device, an audio input device, a gaze direction input device, a position detection device or the like can be used as an input unit 5240. The display unit 5230 includes a display field and has a function for displaying image data. For example, the display field described in embodiment 3 can be used for the display unit 5230. The 5250 acquisition unit has a function for inputting acquisition data. For example, the 5250 acquisition unit has a function for capturing an environment in which the electronic device is used and for inputting the acquisition data. In particular, an illuminance sensor, an imaging device, a position detection device, a pressure sensor, a human movement sensor or the like can be used as the detection unit 5250. The 5290 communication unit has a function for receiving and transmitting communication data. For example, the 5290 communication unit functions by connecting to another electronic device or a communication network via wireless or wired communication. In particular, the 5290 communication unit has a function for communication in a wireless local area network, telephone communication, near field communication, or the like. Fig. 11B shows an electronic device with an external shape along a cylindrical column or the like. An example of such an electronic device is digital signage. The display field of an embodiment of the present invention can be used for the display unit 5230. The electronic device can have a function for changing the display method according to the illuminance of a usage environment. The electronic device has a function for changing the displayed content when it detects the presence of a person. Therefore, for example, the electronic device can be provided on a column of a building. The electronic device can display an advertisement, instructions, or the like. The electronic device can be used for digital signage or the like. Fig. 11C depicts an electronic device with a function for generating image data based on the path of a pointer used by the user. Examples of such an electronic device include an electronic whiteboard, an electronic bulletin board, and digital signage. In particular, a display panel with a diagonal of 20 inches or more, preferably 40 inches or more, and more preferably 55 inches or more, can be used. A plurality of display panels can be arranged and used as a single display area. Alternatively, a plurality of display panels can be arranged and used as a multi-screen display. Fig. 11D depicts an electronic device that can receive data from another device and display the data on the display unit 5230. An example of such an electronic device is a portable electronic device. In particular, the electronic device can display several options, and the user can select some of the options and send a response to the sender of the data. As another example, the electronic device has a function for changing the display method according to the illuminance of a usage environment. Thus, for example, the power consumption of the portable electronic device can be reduced. As yet another example, the portable electronic device can display an image in such a way that the portable electronic device can also be used appropriately in an environment with strong ambient light, such as outdoors in good weather. Fig. 11E shows an electronic device that includes the display unit 5230, which has a surface that is slightly curved along one side of a housing. An example of such an electronic device is a mobile phone. The display unit 5230 includes a display field that, for example, has a function for displaying images on the front, sides, top, and back. Therefore, for example, a mobile phone can display data not only on its front but also on its sides, top, and back. Figure 12A depicts an electronic device that can receive data via the internet and display it on the 5230 display unit. A smartphone is one example of such an electronic device. For instance, the user can view a message they have created on the 5230 display unit and send it to another device. Another example is a device that has a function for changing the display mode according to the ambient light level. This can reduce the smartphone's power consumption. Finally, it is possible to obtain a smartphone that can display an image in such a way that it can be used effectively in bright sunlight, such as outdoors in good weather. Fig. 12B depicts an electronic device in which a remote control can be used as an input unit 5240. An example of such an electronic device is a television system. For instance, data received from a broadcaster or via the internet can be displayed on the display unit 5230. A picture of a user can be captured using the capture unit 5250. The user's picture can be transmitted. The electronic device can acquire a user's viewing history and make it available to a cloud service. The electronic device can acquire recommendation data from a cloud service and display the data on the display unit 5230. Alternatively, a program or moving image can be displayed based on the recommendation data. As another example, the electronic device has a function for changing the display method according to the illuminance of a usage environment.Consequently, the television system can display an image in such a way that it can be used appropriately even in strong external light entering the interior from outside during good weather. Figure 12C depicts an electronic device that can receive teaching materials via the internet and display them on the 5230 display unit. A tablet computer is one example of such an electronic device. The user can enter an assignment using the 5240 input unit and send it via the internet. The user can receive a corrected assignment or evaluation from a cloud service, which can then be displayed on the 5230 display unit. Based on the evaluation, the user can select suitable teaching material, which can then be displayed. For example, an image signal from another electronic device can be received and displayed on the 5230 display unit. If the electronic device is placed on a stand or similar support, the 5230 display unit can be used as a secondary display. Therefore, for example, a tablet computer can display an image in such a way that it can be used even in bright sunlight, such as outdoors in good weather. Fig. 12D depicts an electronic device comprising a plurality of display units 5230. An example of such an electronic device is a digital camera. For instance, the display unit 5230 can show an image captured by the capture unit 5250. A captured image can be displayed on the capture unit. A captured image can be edited using the input unit 5240. A message can be attached to a captured image. A captured image can be transmitted over the internet. The electronic device has a function for changing the shooting conditions according to the illuminance of a usage environment. Consequently, for example, the digital camera can display an object in such a way that an image can be viewed appropriately even in an environment with strong ambient light, such as outdoors in good weather. Fig. 12E depicts an electronic device in which the electronic device of this embodiment is used as the master to control another electronic device used as the slave. An example of such an electronic device is a portable personal computer. For example, part of the image data can be displayed on the display unit 5230, and another part of the image data can be displayed on a display unit of another electronic device. Image signals can be supplied. Data written by an input unit of another electronic device can be received by the communication unit 5290. Therefore, a large display area can be used, for example, in the case where a portable personal computer is used. Fig. 13A depicts an electronic device that includes the sensing unit 5250, which detects acceleration or direction. An example of such an electronic device is a goggle-like electronic device. The sensing unit 5250 can input data about the user's position or the direction in which the user is looking. The electronic device can generate image data for the right eye and image data for the left eye according to the user's position or the direction in which the user is looking. The display unit 5230 includes a display area for the right eye and a display area for the left eye. Therefore, for example, a virtual reality image that provides the user with a sense of immersion can be displayed on the goggle-like electronic device. Fig. 13B depicts an electronic device comprising an imaging device and the sensing unit 5250, which detects acceleration or direction. An example of such an electronic device is a pair of glasses. The sensing unit 5250 can input data about the user's position or the direction in which the user is looking. The electronic device can generate image data corresponding to the user's position or the direction in which the user is looking. Consequently, the data can, for example, be displayed alongside a real-world scene. Alternatively, an augmented reality image can be displayed on the glasses-like electronic device. This embodiment can optionally be combined with any of the other embodiments described in this document. [Example 1] <<Synthesebeispiel 1> > This example describes a method for synthesizing N,N-bis(biphenyl-4-yl)-4'-(benzo[b]naphtho[2,1-d]furan-10-yl)-3'-(9H-carbazol-9-yl)biphenyl-4-amine (abbreviation: aBnf-YGBBi1BP), which is represented by structural formula (100) in embodiment 1. The structure of aBnf-YGBBi1BP is shown below. <Schritt 1: Synthese von 9-[5-Chloro-2-(benzo[b]naphto[2,1-d]furan-10-yl)phenyl]-9H-carbazol> Into a 100 ml three-necked flask equipped with a reflux tube, 5.0 g (14 mmol) 9-(2-Bromo-5-chlorophenyl)-9H-carbazole, 5.2 g (15 mmol) 10-(4,4,5,5-Tetramethyl-1,3,2-dioxaborolan-2-yl)benzo[b]naphtho[2,1-d]furan, 0.17 g (0.56 mmol) Tri(o-tolyl)phosphine, 3.9 g (28 mmol) potassium carbonate, 60 ml toluene, 12 ml ethanol and 14 ml water were added, the mixture was degassed under reduced pressure, and then the air in the three-necked flask was replaced with nitrogen. To this mixture, which was heated at 60 °C, 62 mg (0.28 mmol) of palladium(II) acetate was added, and the resulting mixture was stirred at 90 °C for 10 hours while being heated. After stirring, water was added to the three-necked flask, the precipitated solid was collected by suction filtration, and the resulting solid was washed with toluene, ethanol, and water. The resulting solid was dissolved in heated toluene, followed by filtration through Celite (catalog no.537-02305, FUJIFILM Wako Pure Chemical Co., Ltd.) and aluminum oxide, yielding 1.3 g of solid 1A. Water was added to the filtrate obtained by suction filtration, and an aqueous layer was subjected to toluene extraction. The extract solution was washed twice with water and further washed with a saturated salt solution. Magnesium sulfate was added to the mixture for drying, and the magnesium sulfate was removed by gravity filtration. The filtrate obtained by gravity filtration was concentrated under reduced pressure, and the resulting solid was recrystallized with toluene and hexane to give 2.9 g of solid 1B. Solid 1A and solid 1B were combined and purified by silica gel chromatography to give 3.6 g of a white target solid in a 52% yield.It should be noted that hexane was initially used as the mobile phase in the silica gel column chromatography, and from the middle onwards a mixed solvent of hexane:toluene = 4:1 was used. The synthesis scheme (a-1) of step 1 is shown below. The molecular weight of the white solid obtained in step 1 was measured by LC / MS. The result was m / z of 494 (representing a proton adduct of the target), while the calculated mass of the target substance was 493. This reveals that 9-[5-Chloro-2-(benzo[b]naphto[2,1-d]furan-10-yl)phenyl]-9H-carbazole was obtained. It should be noted that the solid obtained in step 1 was analyzed by proton nuclear magnetic resonance (1H-NMR) measurements. Numerical 1H-NMR data of the resulting solid are shown below. 1H-NMR (Chloroform-d, 500 MHz): δ = 7,98-7,96 (m, 2H), 7,93-7,91 (m, 1H), 7,87 (d, J = 8,0 Hz, 2H), 7,83 (d, J = 8,6 Hz, 1H), 7,72-7,68 (m, 4H), 7,54-7,52 (m, 2H), 7,21-7,18 (m, 4H), 7,09 (td, J = 7,5 Hz, 1,2 Hz, 2H), 7,00-6,98 (m, 2H). <Schritt 2: Synthese von N,N-Bis(biphenyl-4-yl)-4'-(benzo[b]naphto[2,1-d]furan-10-yl)-3'-(9H-carbazol-9-yl)biphenyl-4-amin (Abkürzung : aBnf-YGBBi1BP)> Into a 100 ml three-necked flask equipped with a reflux tube, 3.5 g (7.1 mmol) 9-[5-chloro-2-(benzo[b]naphto[2,1-d]furan-10-yl)phenyl]-9H-carbazole, 3.7 g (7.1 mmol) N,N-Di(4-biphenylyl)-4-(4,4,5,5-tetramethyl-1,3,2-dioxaborolan-2-yl)aniline, 50 mg (0.14 mmol) di(1-adamantyl)-n-butylphosphine, 4.5 g (21 mmol) tripotassium phosphate, 40 ml diethylene glycol dimethyl ether and 1.6 g (21 mmol) tert-butyl alcohol were added, the mixture was degassed under reduced pressure, and then the air in the three-necked flask was replaced with nitrogen. To this mixture, which was heated at 60 °C, 16 mg (71 µmol) of palladium(II) acetate was added, and the resulting mixture was stirred at 90 °C for 10 hours while being heated. After stirring, water was added to the three-necked flask, the precipitated solid was collected by suction filtration, and the resulting solid was washed with toluene, ethanol, and water.The resulting solid was dissolved in heated toluene, followed by filtration through Celite (catalog no. 537-02305, FUJIFILM Wako Pure Chemical Co., Ltd.) and aluminum oxide, yielding 3.4 g of a solid. The resulting solid was purified by high-performance liquid chromatography (mobile phase: chloroform) to afford 3.0 g of a white target solid in a 49% yield. The synthesis scheme (a-2) of step 2 is shown below. Then, 2.4 g of the recovered solid was subjected to sublimation purification using a train sublimation process. In this process, the solid was heated for 25 hours at 365 °C to 355 °C under a pressure of 2.6 Pa with an argon flow rate of 10 ml / min, and a solid precipitated at 270 °C was collected. The result was 1.9 g of a pale yellow target solid with a recovery rate of 79%. The molecular weight of the pale yellow solid obtained in step 2 was measured by LC-MS. A value of m / z of 855 was observed, while the calculated mass of the target compound was 855. This reveals that N,N-Bis(biphenyl-4-yl)-4'-(benzo[b]naphto[2,1-d]furan-10-yl)-3'-(9H-carbazol-9-yl)biphenyl-4-amine (abbreviation: aBnf-YGBBi1BP) was obtained. It should be noted that the pale yellow solid obtained in step 2 was analyzed by proton nuclear magnetic resonance (1H-NMR) measurements. The values ​​obtained are shown below. Fig. 14 is a 1H-NMR diagram. Consequently, it was found that aBnf-YGBBi1BP, represented by the structural formula (100) described above, was obtained in this synthesis example. 1H-NMR (dichloromethane-d2, 500 MHz): δ = 8.09 (d, J = 8.0 Hz, 1H), 7.99 (dd, J = 8.0 Hz, 1.7 Hz, 1H), 7.95-7.86 (m, 6H), 7.75 (dd, J = 7.5 Hz, 1.2 Hz, 1H), 7.72-7.70 (m, 3H), 7.63-7.61 (m, 4H), 7.57 (d, J = 8.6 Hz, 4H), 7.54-7.52 (m, 2H), 7.44 (t, J = 7.5 Hz, 4H), 7.36 (d, J = 8.0 Hz, 2H), 7.34-7.31 (m, 2H), 7.29-7.18 (m, 9H), 7.12-7.07 (m, 3H). <Messung von physikalischen Eigenschaften> The physical properties of aBnf-YGBBi1BP, obtained in this synthesis example, were measured. [Spectrum measurement] First, the UV-VIS absorption spectra (hereinafter referred to simply as "absorption spectra") and photoluminescence (PL) spectra of a toluene solution and a thin film of aBnf-YGBBi1BP were measured. The absorption spectrum of the solution was measured with a UV-VIS spectrophotometer (V-770DS, JASCO Corporation), and the absorption spectrum of the thin film was measured with a UV-VIS spectrophotometer (U-4100, Hitachi High-Tech Corporation). The PL spectrum was measured with a fluorescence spectrophotometer (FP-8600DS, JASCO Corporation). To calculate the absorption spectrum of aBnf-YGBBi1BP, the absorption spectrum of toluene placed in a quartz cell was measured, and then it was subtracted from the absorption spectrum of the toluene solution of aBnf-YGBBi1BP placed in a quartz cell. To obtain the absorption spectrum and the PL spectrum of the thin film, a test sample was measured. The test sample was prepared as follows: aBnf-YGBBi1BP was formed over a quartz substrate by a vacuum evaporation process and sealed using another quartz substrate as a counter-substrate. It should be noted that the PL spectrum was obtained by measuring the sealed sample, and that the absorption spectrum was obtained by measuring the sample from which the seal had been removed and the counter-substrate taken. The absorption spectrum was obtained by subtracting the absorption spectrum of the quartz substrate from the absorption spectrum of aBnf-YGBBi1BP formed over the quartz substrate. Figures 15 and 16 show the measurement results for the toluene solution and the thin film, respectively. The measurements show that the toluene solution of aBnf-YGBBi1BP exhibits an absorption peak at approximately 358 nm, the thin film exhibits an absorption peak at approximately 355 nm, and neither the toluene solution nor the thin film shows an absorption band on a wavelength longer than 430 nm. The results indicate that absorption does not reduce the emission efficiency at the wavelength used for a display, demonstrating its suitability as a light-emitting element. Furthermore, the toluene solution exhibits an emission wavelength peak at approximately 421 nm (excitation wavelength: 355 nm), and the thin film of aBnf-YGBBi1BP exhibits an emission wavelength peak at approximately 438 nm (excitation wavelength: 345 nm). [Cyclovoltammetry measurement] Next, the HOMO and LUMO levels of aBnf-YGBBi1BP were obtained by cyclic voltammetry (CV) measurement. The calculation method is described below. An electrochemical analyzer (ALS model 600A or 600C, BAS Inc.) was used as the measuring instrument. To prepare a solution for the CV measurement, anhydrous dimethylformamide (DMF) (Sigma-Aldrich Inc., 99.8%, catalog no. 22705-6) was used as the solvent, and tetra-n-butylammonium perchlorate (n-Bu4NClO4) (Tokyo Chemical Industry Co., Ltd., catalog no. T0836) was dissolved at a concentration of 100 mmol / L as the carrier electrolyte. The measurement target was also dissolved at a concentration of 2 mmol / L. A platinum electrode (PTE platinum electrode, BAS Inc.) was used as the working electrode, another platinum electrode (Pt counter electrode for VC-3 (5 cm), BAS Inc.) was used as the auxiliary electrode, and an Ag / Ag+ electrode (RE7 reference electrode for a non-aqueous solvent, BAS Inc.) was used as the reference electrode. It should be noted that the measurement was performed at room temperature (higher than or equal to 20 °C and lower than or equal to 25 °C). The sampling rate for the CV measurement was set to 0.1 V / s, and an oxidation potential Ea[V] and a reduction potential Ec[V] were measured relative to the reference electrode. The potential Ea is an intermediate potential of an oxidation-reduction wave, and the potential Ec is an intermediate potential of a reduction-oxidation wave.Since the potential energy of the reference electrode used in this example is known to be -4.94 [eV] with respect to the vacuum level, the HOMO level and the LUMO level can be calculated using the following formulas: HOMO level [eV] = -4.94 - Ea and LUMO level [eV] = -4.94 - Ec. The CV measurement was repeated 100 times, and the oxidation-reduction wave in the 100th cycle was compared with the oxidation-reduction wave in the first cycle to investigate the electrical stability of the compound. Consequently, it was found that the oxidation potential Ea[V] was measured at a HOMO level of -5.49 eV. The reduction potential Ec[V] was measured at a LUMO level of -2.38 eV. Comparison of the waveforms in the first cycle and the 100th cycle of repeated oxidation-reduction wave measurements shows that the peak intensity in the 100th cycle of the Ea measurement was maintained at 92% of that in the first cycle, and that the peak intensity in the 100th cycle of the Ec measurement was maintained at 90% of that in the first cycle. These results revealed that aBnf-YGBBi1BP is highly resistant to repeated oxidation and reduction. [Dynamic Differential Calorimetry Measurement] A differential scanning calorimetry (DSC) measurement was performed using a DSC8500, manufactured by PerkinElmer, Inc. The DSC measurement was performed as follows: The temperature was increased from -10 °C to 400 °C at a rate of 40 °C / min and held for three minutes; then the temperature was decreased to 400 °C at a rate of 100 °C / min and held for three minutes. This process was repeated twice. The results of the DSC measurement from the second process show that the glass transition temperature of aBnf-YGBBi1BP is 168 °C. This indicates that aBnf-YGBBi1BP is a substance with very high heat resistance and that the aBnf-YGBBi1BP film can maintain thermal stability. [Thermogravimetry differential thermal analysis] Thermogravimetric differential thermal analysis (TG-DTA) was performed on aBnf-YGBBi1BP. A highly sensitive differential-type thermogravimeter (STA-2500 Regulus, NETZSCH Japan KK) was used for the measurement. The measurement was carried out under atmospheric pressure at a temperature increase rate of 10 °C / min under a nitrogen stream (flow rate: 200 ml / min). The thermogravimetric differential thermal analysis revealed that the temperature (decomposition temperature) at which the weight determined by thermogravimetry decreased by 5% of the initial weight was greater than or equal to 500 °C, indicating that aBnf-YGBBi1BP is a substance with very high heat resistance. It should be noted that in this example the weight of aBnf-YGBBi1BP used for thermogravimetric differential thermal analysis was 3 mg. [Example 2] <<Synthesebeispiel 2> > This example describes a method for synthesizing N-(biphenyl-4-yl)-4'-(benzo[b]naphtho[2,1-d]furan-10-yl)-3'-(9H-carbazol-9-yl)-N-(9,9-dimethyl-9H-fluoren-2-yl)biphenyl-4-amine (abbreviation: aBnf-YGBBiF), which is represented by structural formula (101) in embodiment 1. The structure of aBnf-YGBBiF is shown below. <Schritt 1: Synthese von N-(Biphenyl-4-yl)-4'-(benzo[h]naphtho[2,1-d]furan-10-yl)-3'-(9H-carbazol-9-yl)-N-(9,9-dimethyl-9H-fluoren-2-yl)biphenyl-4-amin (Abkürzung: aBnf-YGBBiF)> Into a 200 ml three-necked flask equipped with a reflux tube, 2.6 g (5.3 mmol) of 9-[5-chloro-2-(benzo[b]naphto[2,1-d]furan-10-yl)phenyl]-9H-carbazole, 3.0 g (5.3 mmol) of N-(biphenyl-4-yl)-9,9-dimethyl-N-[4-(4,4,5,5-tetramethyl-1,3,2-dioxaborolan-2-yl)phenyl]-9H-fluoren-2-amine, 88 mg (0.24 mmol) of di(1-adamantyl)-n-butylphosphine, 2.6 g (24 mmol) of tripotassium phosphate, 30 ml of diethylene glycol dimethyl ether, and 0.90 g (12 mmol) of tert-butyl alcohol were added. The resulting mixture was degassed under reduced pressure, and the air was removed. The nitrogen in the three-necked flask was replaced with nitrogen. To this mixture, which was heated at 60 °C, 27 mg (0.12 mmol) of palladium(II) acetate was added, and the resulting mixture was stirred at 130 °C for 14 hours while being heated. After stirring, water was added to the three-necked flask, and an aqueous layer was subjected to extraction with toluene.The extract solution was washed twice with water and further washed with a saturated salt solution. Magnesium sulfate was added to the mixture for drying, and the magnesium sulfate was removed by gravity filtration. The filtrate obtained by gravity filtration was concentrated under reduced pressure, and the resulting solid was purified by silica gel chromatography. It should be noted that hexane was initially used as the mobile phase in the silica gel column chromatography, and from the middle onward, a mixed solvent of hexane:toluene = 3:2 was used. The resulting solid was recrystallized with toluene, ethanol, and hexane to afford 1.7 g of a white target solid in a 30% yield. The synthesis scheme (b-1) of step 1 is shown below. Then, 1.4 g of the recovered solid was subjected to sublimation purification using a train sublimation process. In this process, the solid was heated for 19 hours at 365 °C to 350 °C under a pressure of 2.7 Pa with an argon flow rate of 7 ml / min, and a solid precipitated at 270 °C was collected. The result was 1.1 g of a yellow target solid with a recovery rate of 80%. The molecular weight of the yellow solid obtained in step 1 was measured by LC-MS. A value of m / z of 895 was observed, while the calculated mass of the target compound was also 895. This reveals that N-(biphenyl-4-yl)-4'-(benzo[b]naphtho[2,1-d]furan-10-yl)-3'-(9H-carbazol-9-yl)-N-(9,9-dimethyl-9H-fluoren-2-yl)biphenyl-4-amine (abbreviation: aBnf-YGBBiF) was obtained. It should be noted that the pale yellow solid obtained in step 1 was analyzed by proton nuclear magnetic resonance (1H-NMR) measurements. The values ​​obtained are shown below. Fig. 17 is a 1H-NMR diagram. Consequently, it was found that aBnf-YGBBiF, represented by the structural formula (101) described above, was obtained in this synthesis example. 1H-NMR-(dichloromethane-d2, 500 MHz): δ = 8.09 (d, J = 8.0 Hz, 1H), 7.99 (dd, J = 8.0 Hz, 2.3 Hz, 1H), 7.95-7.86 (m, 6H), 7.75 (dd, J = 7.5 Hz, 1.2 Hz, 1H), 7.71-7.66 (m, 5H), 7.63-7.61 (m, 2H), 7.56 (d, J = 8.6 Hz, 2H), 7.54-7.51 (m, 2H), 7.45-7.41 (m, 3H), 7.37-7.31 (m, 5H), 7.29-7.18 (m, 8H), 7.15-7.13 (m, 1H), 7.12-7.07 (m, 3H), 1.44 (s, 6H). <Messung von physikalischen Eigenschaften> The physical properties of aBnf-YGBBiF obtained in this synthesis example were measured. [Spectrum measurement] First, the UV-VIS absorption spectra (hereinafter referred to simply as "absorption spectra") and photoluminescence (PL) spectra of a toluene solution and a thin film of aBnf-YGBBiF were measured. The absorption spectrum of the solution was measured with a UV-VIS spectrophotometer (V-770DS, JASCO Corporation), and the absorption spectrum of the thin film was measured with a UV-VIS spectrophotometer (U-4100, Hitachi High-Tech Corporation). The PL spectrum was measured with a fluorescence spectrophotometer (FP-8600DS, JASCO Corporation). To calculate the absorption spectrum of aBnf-YGBBiF, the absorption spectrum of toluene placed in a quartz cell was measured, and then it was subtracted from the absorption spectrum of aBnf-YGBBiF placed in a quartz cell. To obtain the absorption spectrum and the PL spectrum of the thin film, a test sample was measured. The test sample was prepared as follows: aBnf-YGBBiF was formed over a quartz substrate by a vacuum evaporation process and sealed using another quartz substrate as a counter-substrate. It should be noted that the PL spectrum was obtained by measuring the sealed sample, and that the absorption spectrum was obtained by measuring the sample from which the seal had been removed and the counter-substrate taken. The absorption spectrum was obtained by subtracting the absorption spectrum of the quartz substrate from the absorption spectrum of aBnf-YGBBiF formed over the quartz substrate. Figures 18 and 19 show the measurement results for the toluene solution and the thin film, respectively. The measurements show that the toluene solution of aBnf-YGBBiF exhibits an absorption peak at approximately 363 nm, that the thin film of aBnf-YGBBiF exhibits an absorption peak at approximately 364 nm, and that neither the toluene solution nor the thin film shows an absorption band on a wavelength longer than 430 nm. The results indicate that absorption does not reduce the emission efficiency at the wavelength used for a display, demonstrating that aBnf-YGBBiF is suitable for a light-emitting element. Furthermore, the toluene solution of aBnf-YGBBiF exhibits an emission wavelength peak at approximately 428 nm (excitation wavelength: 365 nm), and the thin film of aBnf-YGBBiF exhibits an emission wavelength peak at approximately 445 nm (excitation wavelength: 365 nm). [Cyclovoltammetry measurement] Next, the HOMO and LUMO levels of aBnf-YGBBiF were obtained by cyclic voltammetry (CV) measurement. The calculation method is described below. An electrochemical analyzer (ALS model 600A or 600C, BAS Inc.) was used as the measuring instrument. To prepare a solution for the CV measurement, anhydrous dimethylformamide (DMF) (Sigma-Aldrich Inc., 99.8%, catalog no. 22705-6) was used as the solvent, and tetra-n-butylammonium perchlorate (n-Bu4NClO4) (Tokyo Chemical Industry Co., Ltd., catalog no. T0836) as the carrier electrolyte was dissolved at a concentration of 100 mmol / L. The measurement target was also dissolved at a concentration of 2 mmol / L. A platinum electrode (PTE platinum electrode, BAS Inc.) was used as the working electrode, another platinum electrode (Pt counter electrode for VC-3 (5 cm), BAS Inc.) was used as the auxiliary electrode, and an Ag / Ag+ electrode (RE7 reference electrode for a non-aqueous solvent, BAS Inc.) was used as the reference electrode. It should be noted that the measurement was performed at room temperature (higher than or equal to 20 °C and lower than or equal to 25 °C). The sampling rate for the CV measurement was set to 0.1 V / s, and an oxidation potential Ea[V] and a reduction potential Ec[V] were measured relative to the reference electrode. The potential Ea is an intermediate potential of an oxidation-reduction wave, and the potential Ec is an intermediate potential of a reduction-oxidation wave.Since the potential energy of the reference electrode used in this example is known to be -4.94 [eV] with respect to the vacuum level, the HOMO level and the LUMO level can be calculated using the following formulas: HOMO level [eV] = -4.94 - Ea and LUMO level [eV] = -4.94 - Ec. The CV measurement was repeated 100 times, and the oxidation-reduction wave in the 100th cycle was compared with the oxidation-reduction wave in the first cycle to investigate the electrical stability of the compound. Consequently, it was found that when measuring the oxidation potential Ea[V] of aBnf-YGBBiF, its HOMO level was -5.42 eV. It was found that when measuring the reduction potential Ec[V], the LUMO level was -2.38 eV. Comparison of the waveforms in the first cycle and the 100th cycle of repeated oxidation-reduction wave measurements shows that the peak intensity in the 100th cycle of the Ea measurement was maintained at 91% of that in the first cycle, and that the peak intensity in the 100th cycle of the Ec measurement was maintained at 99% of that in the first cycle. These results revealed that aBnf-YGBBiF is highly resistant to repeated oxidation and reduction. [Dynamic Differential Calorimetry Measurement] A differential scanning calorimetry (DSC) measurement of aBnf-YGBBiF was performed using a DSC8500 manufactured by PerkinElmer, Inc. The temperature was increased from -10 °C to 340 °C at a rate of 40 °C / min and held for three minutes; then the temperature was decreased back to -10 °C at a rate of 100 °C / min and held for three minutes. This process was repeated twice. The DSC measurement results from the second process show that the glass transition temperature of aBnf-YGBBiF was 170 °C. This demonstrates that aBnf-YGBBiF is a substance with very high heat resistance and that the aBnf-YGBBiF film can maintain thermal stability. [Thermogravimetry differential thermal analysis] Thermogravimetric differential thermal analysis (TG-DTA) was performed on aBnf-YGBBiF. A highly sensitive differential-type thermogravimeter (STA-2500 Regulus, NETZSCH Japan KK) was used for the measurement. The measurement was carried out under atmospheric pressure at a temperature increase rate of 10 °C / min under a nitrogen stream (flow rate: 200 ml / min). The thermogravimetric differential thermal analysis revealed that the temperature (decomposition temperature) at which the weight determined by thermogravimetry decreased by 5% of the initial weight was greater than or equal to 500 °C, indicating that aBnf-YGBBiF is a substance with very high heat resistance. It should be noted that in this example the weight of aBnf-YGBBiF used for thermogravimetric differential thermal analysis was 3 mg. [Example 3] In this example, a light-emitting device 1A of an embodiment of the present invention was manufactured. A light-emitting device 1B was also manufactured for comparison, and its properties were compared. The structural formulas of organic compounds used for the light-emitting devices 1A and 1B are shown below. In the devices, as shown in Fig. 20, a hole injection layer 811, a hole transport layer 812, a light-emitting layer 813, an electron transport layer 814 and an electron injection layer 815 are arranged one above the other in this order over a first electrode 801, which is formed over a glass substrate 800, and a second electrode 802 is arranged over the electron injection layer 815. <Verfahren zum Herstellen der Licht emittierenden Vorrichtung 1A> The first electrode, 801, was formed by sputtering a film of indium tin oxide containing silicon oxide (ITSO) with a thickness of 110 nm over the glass substrate 800. The electrode area was set to 4 mm² (2 mm × 2 mm). Next, in a pretreatment to form the light-emitting device above the substrate, the substrate surface was washed with water, and baking was carried out for 1 hour at 200 °C. The substrate was then transferred to a vacuum evaporation unit, where the pressure was reduced to approximately 1 × 10⁻⁴ Pa, and vacuum baking was performed for 30 minutes at 170 °C in a heating chamber of the vacuum evaporation unit. Afterward, natural cooling was carried out for 45 minutes. The substrate provided with the first electrode 801 was then attached to a substrate holder provided in the vacuum evaporation apparatus such that the surface on which the first electrode 801 was formed faced downwards. N,N-Bis(biphenyl-4-yl)-4'-(benzo[b]naphto[2,1-d]furan-10-yl)-3'-(9H-carbazol-9-yl)biphenyl-4-amine (abbreviation: aBnf-YGBBi1BP) and a fluorine-containing electron acceptor material with a molecular weight of 672 (OCHD-003) were deposited by co-evaporation to a thickness of 10 nm such that the weight ratio of aBnf-YGBBi1BP to OCHD-003 was 1:0.10, thereby forming the hole injection layer 811. Next, aBnf-YGBBi1BP was deposited over the hole injection layer 811 by evaporation using resistance heating at a thickness of 90 nm as hole transport layer 812_2, and then N,N-Bis[4-(dibenzofuran-4-yl)phenyl]-4-amino-p-terphenyl (abbreviation: DBfBB1TP) was deposited by evaporation using resistance heating at a thickness of 10 nm as hole transport layer 812_1, forming the hole transport layer 812. Next, 9-(1-naphthyl)-10-[4-(2-naphthyl)phenyl]anthracene (abbreviation: αN-βNPAnth) and N,N'-diphenyl-N,N'-bis(9-phenyl-9H-carbazol-2-yl)naphtho[2,3-b;6,7-b']bisbenzofuran-3,10-diamine (abbreviation: 3,10PCA2Nbf(IV)-02) were deposited by co-evaporation using resistance heating in a thickness of 25 nm over the hole transport layer 812 such that the weight ratio of αN-βNPAnth to 3,10PCA2Nbf(IV)-02 was 1:0.015, forming the light-emitting layer 813. Next, 2-{3-[3-(N-Phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}dibenzo[f,h]quinoxaline (abbreviation: 2mPCCzPDBq) was deposited by evaporation to a thickness of 10 nm as electron transport layer 814_1 over the light-emitting layer 813. Then, 2,2'-(1,3-Phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviation: mPPhen2P) was deposited by evaporation to a thickness of 15 nm as electron transport layer 814_2, thus forming electron transport layer 814. Next, lithium fluoride (LiF) was deposited over the electron transport layer 814 by evaporation using resistance heating to a thickness of 1 nm, forming the electron injection layer 815. Then, aluminum (Al) was deposited over the electron injection layer 815 by evaporation to a thickness of 150 nm, forming the second electrode 802. <Verfahren zum Herstellen der Licht emittierenden Vorrichtung 1B> A method for fabricating the light-emitting device 1B is described. The light-emitting device 1B differs from the light-emitting device 1A in the structures of the hole injection layer 811 and the hole transport layer 812_2. The other components were designed in a similar manner to those of the light-emitting device 1A. In particular, in the light-emitting device 1B above the first electrode 801 N,N-Bis(biphenyl-4-yl)-3'-(9H-carbazol-9-yl)biphenyl-4-amine (abbreviation: YGBBi1BP-02) and a fluorine-containing electron acceptor material (OCHD-003) with a molecular weight of 672 were deposited by co-evaporation in a thickness of 10 nm such that the weight ratio of YGBBi1BP-02 to OCHD-003 was 1:0.10, thereby forming the hole injection layer 811. Next, YGBBi1BP-02 was deposited over the hole injection layer 811 by evaporation using resistance heating at a thickness of 90 nm as hole transport layer 812_2, and then DBfBB1TP was deposited by evaporation using resistance heating at a thickness of 10 nm as hole transport layer 812_1, forming the hole transport layer 812. The structures of light-emitting devices 1A and 1B for comparison are listed in the following table. [Table 1] [Table 1] second electrode 802150Al Electron injection layer 8151LiF Electron transport layer 814_215mPPhen2P Electron transport layer 814_1102mPCCzPDBq Light-emitting layer 813! 25αN-βNPAnth: 3.10PCA2Nbf(IV)-02 (1: 0.015) Hole transport layer 812_110DBfBB1TP Hole transport layer 812_2! 90aBnf-YGBBi1BPYGBBi1BP-02 Hole injection layer 81110aBnf-YGBBi1BP: OCHD-003(1: 0.10)YGBBi1BP-02: OCHD-003(1: 0.10) first electrode 801110ITSO <Eigenschaften der Licht emittierenden Vorrichtungen> Light-emitting devices 1A and 1B were sealed using a glass substrate in a glove box containing a nitrogen atmosphere to prevent exposure to air (a sealing material was applied to completely enclose the devices, and during sealing, a UV treatment and a heat treatment at 80 °C for one hour were performed). The properties of the devices were then measured. Fig. 21 shows the luminance-current density characteristics of light-emitting devices 1A and 1B. Fig. 22 shows the luminance-voltage characteristics of light-emitting devices 1A and 1B. Fig. 23 shows the current efficiency-luminance characteristics of light-emitting devices 1A and 1B. Fig. 24 shows the current density-voltage characteristics of light-emitting devices 1A and 1B. Fig. 25 shows the electroluminescence spectra of light-emitting devices 1A and 1B. The main characteristics of the devices at a luminance of approximately 1000 cd / cm² are shown in the table below. It should be noted that the luminance, CIE chromaticity, and emission spectra were measured using a spectroradiometer (SR-UL1R, TOPCON TECHNOHOUSE CORPORATION). [Table 2] Light-emitting device 1A5,000,50512,60,1360,1109127,234,547,59 Light-emitting device 1B5,600,42410,60,1370,1077667,224,057,70 The preceding table and Figures 21, 22, 23, 24 to 25 show that the light-emitting device 1A is an advantageous light-emitting device. In particular, it has been found that the light-emitting device 1A operates at a lower voltage than the light-emitting device 1B. This is probably due to the fact that benzonaphthofuran, which is contained in aBnf-YGBBi1BP, used for the light-emitting device 1A, has excellent hole transport properties, which increases the proportion of holes that reach the interior of the light-emitting layer and allows operation at a lower voltage. <Ergebnisse des Zuverlässigkeitstests> A reliability test was performed on the light-emitting devices 1A and 1B. Fig. 26 shows a time-dependent change in the normalized luminance during operation with a constant current density (50 mA / cm²). In Fig. 26, the vertical axis represents the luminance (%), which is normalized to 100% using the luminance at the start of emission, and the horizontal axis represents time (h). LT95 (h), which is the time it takes for the measured luminance to decrease to 95% of the initial luminance, was 660 hours for light-emitting device 1A. For comparison, LT95 (h) for light-emitting device 1B was 579 hours. This shows that LT95 for light-emitting device 1A is 1.13 times or more than that of light-emitting device 1B. Since benzonaphthofuran, which is contained in aBnf-YGBBi1BP used for the light-emitting device 1A, has excellent hole transport properties, more holes can be transported to the light-emitting layer and to the electron transport layer. This likely leads to a lower generation of unnecessary excitons at the interface between the hole transport layer and the light-emitting layer, thereby improving the reliability of the entire device. Therefore, it was confirmed that the light-emitting device of an embodiment of the present invention has advantageous properties and improved reliability. [Example 4] In this example, a light-emitting device 2A of an embodiment of the present invention was manufactured. A light-emitting device 2B was also manufactured for comparison, and its properties were compared. The structural formulas of organic compounds used for the light-emitting devices 2A and 2B are shown below. In the devices, as shown in Fig. 20, the hole injection layer 811, the hole transport layer 812, the light-emitting layer 813, the electron transport layer 814 and the electron injection layer 815 are arranged one above the other in this order over the first electrode 801, which is formed over the glass substrate 800, and the second electrode 802 is arranged over the electron injection layer 815. <Verfahren zum Herstellen der Licht emittierenden Vorrichtung 2A> The first electrode, 801, was formed by sputtering a film of indium tin oxide containing silicon oxide (ITSO) with a thickness of 110 nm over the glass substrate 800. The electrode area was set to 4 mm² (2 mm × 2 mm). Next, in a pretreatment to form the light-emitting device above the substrate, the substrate surface was washed with water, and baking was carried out for 1 hour at 200 °C. The substrate was then transferred to a vacuum evaporation unit, where the pressure was reduced to approximately 1 × 10⁻⁴ Pa, and vacuum baking was performed for 30 minutes at 170 °C in a heating chamber of the vacuum evaporation unit. Afterward, natural cooling was carried out for 45 minutes. The substrate, provided with the first electrode 801, was then attached to a substrate holder provided in the vacuum evaporation apparatus such that the surface on which the first electrode 801 was formed faced downwards. N,N-Bis(biphenyl-4-yl)-4'-(benzo[b]naphto[2,1-d]furan-10-yl)-3'-(9H-carbazol-9-yl)biphenyl-4-amine (abbreviation: aBnf-YGBBi1BP) and a fluorine-containing electron acceptor material with a molecular weight of 672 (OCHD-003) were deposited by co-evaporation to a thickness of 10 nm such that the weight ratio of aBnf-YGBBi1BP to OCHD-003 was 1:0.10, thereby forming the hole injection layer 811. Next, aBnf-YGBBi1BP was deposited over the hole injection layer 811 by evaporation using resistance heating at a thickness of 90 nm as hole transport layer 812_2, and then N,N-Bis[4-(dibenzofuran-4-yl)phenyl]-4-amino-p-terphenyl (abbreviation: DBfBB1TP) was deposited by evaporation using resistance heating at a thickness of 10 nm as hole transport layer 812_1, forming the hole transport layer 812. Next, 9-(1-naphthyl)-10-[4-(2-naphthyl)phenyl]anthracene (abbreviation: αN-βNPAnth) and N,N'-diphenyl-N,N'-bis(9-phenyl-9H-carbazol-2-yl)naphtho[2,3-b;6,7-b']bisbenzofuran-3,10-diamine (abbreviation: 3,10PCA2Nbf(IV)-02) were deposited by co-evaporation using resistance heating in a thickness of 25 nm over the hole transport layer 812 such that the weight ratio of αN-βNPAnth to 3,10PCA2Nbf(IV)-02 was 1:0.015, forming the light-emitting layer 813. Next, 2-[3'-(9,9-Dimethyl-9H-fluoren-2-yl)biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mFBPTzn) was deposited as electron transport layer 814_1 by evaporation to a thickness of 10 nm over the light-emitting layer 813. Then, 2,2'-(1,3-Phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviation: mPPhen2P) was deposited as electron transport layer 814_2 by evaporation to a thickness of 15 nm, thus forming electron transport layer 814. Next, lithium fluoride (LiF) was deposited over the electron transport layer 814 by evaporation using resistance heating to a thickness of 1 nm, forming the electron injection layer 815. Then, aluminum (Al) was deposited over the electron injection layer 815 by evaporation to a thickness of 150 nm, forming the second electrode 802. <Verfahren zum Herstellen der Licht emittierenden Vorrichtung 2B> A method for fabricating the light-emitting device 2B is described. The light-emitting device 2B differs from the light-emitting device 2A in the structures of the hole injection layer 811 and the hole transport layer 812_2. The other components were designed in a similar manner to those of the light-emitting device 2A. In particular, in the light-emitting device 2B above the first electrode 801 N,N-Bis(biphenyl-4-yl)-3'-(9H-carbazol-9-yl)biphenyl-4-amine (abbreviation: YGBBi1BP-02) and a fluorine-containing electron acceptor material (OCHD-003) with a molecular weight of 672 were deposited by co-evaporation in a thickness of 10 nm such that the weight ratio of YGBBi1BP-02 to OCHD-003 was 1:0.10, thereby forming the hole injection layer 811. Next, YGBBi1BP-02 was deposited over the hole injection layer 811 by evaporation using resistance heating at a thickness of 90 nm as hole transport layer 812_2, and then DBfBB1TP was deposited by evaporation using resistance heating at a thickness of 10 nm as hole transport layer 812_1, forming the hole transport layer 812. The structures of light-emitting devices 2A and 2B for comparison are listed in the following table. [Table 3] [Table 3] second electrode 802150Al Electron injection layer 8151LiF Electron transport layer 814_215mPPhen2P Electron transport layer 814_110mFBPTzn Light-emitting layer 81325αN-βNPAnth: 3,10PCA2Nbf(IV)-02 (1: 0,015) Hole transport layer 812_110DBfBB1TP Hole transport layer 812_290aBnf-YGBBi1 BPYGBBi1BP-02 Hole injection layer 81110aBnf-YGBBi1BP: OCHD-003(1: 0.10)YGBBi1BP-02: OCHD-003(1: 0.10) first electrode 801110ITSO <Eigenschaften der Licht emittierenden Vorrichtungen> Light-emitting devices 2A and 2B were sealed using a glass substrate in a glove box containing a nitrogen atmosphere to prevent exposure to air (a sealing material was applied to completely enclose the devices, and during sealing, a UV treatment and a heat treatment at 80 °C for one hour were performed). The properties of the devices were then measured. Fig. 27 shows the luminance-current density characteristics of the light-emitting devices 2A and 2B. Fig. 28 shows the luminance-voltage characteristics of the light-emitting devices 2A and 2B. Fig. 29 shows the current efficiency-luminance characteristics of the light-emitting devices 2A and 2B. Fig. 30 shows the current density-voltage characteristics of the light-emitting devices 2A and 2B. Fig. 31 shows the electroluminescence spectra of the light-emitting devices 2A and 2B. The main characteristics of the devices at a luminance of approximately 1000 cd / cm² are shown in the table below. It should be noted that the luminance, CIE chromaticity, and emission spectra were measured using a spectroradiometer (SR-UL1R, TOPCON TECHNOHOUSE CORPORATION). [Table 4] Light-emitting device 2A4,400,46111,50,1370,10810258,896,359,46 Light-emitting device 2B5,200,44711,20,1380,1059828,795,319,46 The preceding table and Figures 27, 28, 29, 30 to 31 show that the light-emitting device 2A is an advantageous light-emitting device. In particular, it has been found that the light-emitting device 2A operates at a lower voltage than the light-emitting device 2B. This is probably due to the fact that benzonaphthofuran, which is contained in aBnf-YGBBi1BP, used for the light-emitting device 2A, has excellent hole transport properties, which increases the proportion of holes that reach the interior of the light-emitting layer and allows operation at a lower voltage. <Ergebnisse des Zuverlässigkeitstests> A reliability test was performed on the light-emitting devices 2A and 2B. Fig. 32 shows a time-dependent change in the normalized luminance during operation with a constant current density (50 mA / cm²). In Fig. 32, the vertical axis represents the luminance (%), which is normalized to 100% using the luminance at the start of emission, and the horizontal axis represents time (h). LT95 (h), which is the time it takes for the measured luminance to decrease to 95% of the initial luminance, was 416 hours for light-emitting device 2A. For comparison, LT95 (h) for light-emitting device 2B was 283 hours. This shows that LT95 for light-emitting device 2A is 1.4 times or more than that of light-emitting device 2B. Since benzonaphthofuran, contained in aBnf-YGBBi1BP, used for the light-emitting device 2A, exhibits excellent hole transport properties, more holes can be transported to the light-emitting layer and to the electron transport layer. This likely results in a lower generation of unnecessary excitons at the interface between the hole transport layer and the light-emitting layer, thereby improving the reliability of the entire device. Therefore, it was confirmed that the light-emitting device of an embodiment of the present invention has advantageous properties and improved reliability. [Example 5] In this example, a light-emitting device 3A of an embodiment of the present invention was manufactured. A light-emitting device 3B was also manufactured for comparison, and its properties were compared. The structural formulas of organic compounds used for the light-emitting devices 3A and 3B are shown below. In the devices, as shown in Fig. 20, the hole injection layer 811, the hole transport layer 812, the light-emitting layer 813, the electron transport layer 814 and the electron injection layer 815 are arranged one above the other in this order over the first electrode 801, which is formed over the glass substrate 800, and the second electrode 802 is arranged over the electron injection layer 815. <Verfahren zum Herstellen der Licht emittierenden Vorrichtung 3A> The first electrode, 801, was formed by sputtering a film of indium tin oxide containing silicon oxide (ITSO) with a thickness of 110 nm over the glass substrate 800. The electrode area was set to 4 mm² (2 mm × 2 mm). Next, in a pretreatment ...

Claims

Organic compound represented by the general formula (G1): where: Ar 1 any one of the general formulas (g1-1) to (g1-3); R 1 to R 8 each independently represent hydrogen, an alkyl group with 1 to 6 carbon atoms, a cycloalkyl group with 3 to 10 carbon atoms, an alkoxy group with 1 to 6 carbon atoms, a substituted or unsubstituted aryl group with 6 to 15 carbon atoms, or a substituted or unsubstituted heteroaryl group with 1 to 30 carbon atoms; any one of R 1 to R 4 the general formula (g2-1) or (g2-2); n is greater than or equal to 0 and less than or equal to 3; Ar 2 and Ar 3 each independently represents a substituted or unsubstituted aryl group with 6 to 60 carbon atoms or a substituted or unsubstituted heteroaryl group with 1 to 60 carbon atoms; R 111 to R 120 , R 211 to R 220 and R 311 to R 320 each independently represent hydrogen, an alkyl group with 1 to 6 carbon atoms, a cycloalkyl group with 3 to 10 carbon atoms, an alkoxy group with 1 to 6 carbon atoms, a substituted or unsubstituted aryl group with 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group with 1 to 30 carbon atoms; any one of R 111 to R 120 , any of R 211 to R 220 and any one of R 311 to R 320 each represent a bond; R 121 to R 128 and R 221 to R 228 each independently represent hydrogen, an alkyl group with 1 to 6 carbon atoms, an alkoxy group with 1 to 6 carbon atoms, a substituted or unsubstituted aryl group with 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group with 1 to 30 carbon atoms; an asterisk (*) and any one of R 221 to R 228 represent a bond; and Ar 21 represents a substituted or unsubstituted aryl group with 6 to 60 carbon atoms or a substituted or unsubstituted heteroaryl group with 1 to 60 carbon atoms. Organic compound according to claim 1, wherein the organic compound is represented by the general formula (G2): where: R 1 to R 8 each independently represent hydrogen, an alkyl group with 1 to 6 carbon atoms, a cycloalkyl group with 3 to 10 carbon atoms, an alkoxy group with 1 to 6 carbon atoms, a substituted or unsubstituted aryl group with 6 to 15 carbon atoms, or a heteroaryl group with 1 to 30 carbon atoms; and Ar 21 represents a substituted or unsubstituted aryl group with 6 to 30 carbon atoms or a substituted or unsubstituted heteroaryl group with 1 to 60 carbon atoms. Organic compound according to claim 1, wherein the organic compound is represented by the general formula (G2): where: R 1 and R 3 to R 8 each independently represent hydrogen, an alkyl group with 1 to 6 carbon atoms, a cycloalkyl group with 3 to 10 carbon atoms, an alkoxy group with 1 to 6 carbon atoms, a substituted or unsubstituted aryl group with 6 to 15 carbon atoms, or a heteroaryl group with 1 to 30 carbon atoms; R 2 the general formula (g2-1) or (g2-2); any one of R 221 to R 228 represents a bond; and Ar 21 represents a substituted or unsubstituted aryl group with 6 to 30 carbon atoms or a substituted or unsubstituted heteroaryl group with 1 to 60 carbon atoms. Organic compound according to claim 1, wherein n is 1. Light-emitting device comprising the organic compound according to claim 1. Light-receiving device comprising the organic compound according to claim 1. Organic compound represented by the general formula (G3): where: Ar 1 any one of the general formulas (g1-1) to (g1-3); R 1 to R 8 and R 30 to R 39 each independently represent hydrogen, an alkyl group with 1 to 6 carbon atoms, a cycloalkyl group with 3 to 10 carbon atoms, an alkoxy group with 1 to 6 carbon atoms, or a substituted or unsubstituted aryl group with 6 to 15 carbon atoms; R 2 the general formula (g2-1) or (g2-3); and if R 30 to R 39 each represents a substituted aryl group with 6 to 15 carbon atoms, the aryl group with 6 to 15 carbon atoms is bonded to an adjacent aromatic ring to form a ring, R 111 to R 120 , R 211 to R 220 and R 311 to R 320 each independently represent hydrogen, an alkyl group with 1 to 6 carbon atoms, a cycloalkyl group with 3 to 10 carbon atoms, an alkoxy group with 1 to 6 carbon atoms, a substituted or unsubstituted aryl group with 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group with 1 to 30 carbon atoms; and any one of R 111 , R 112 , R 114 and R 119 , any of R 212 , R 214 and R 215 as well as any one of R 312 , R 314 and R 315 each represent a bond; R 121 to R 128 and R 321 to R 328 each independently represent hydrogen, an alkyl group with 1 to 6 carbon atoms, an alkoxy group with 1 to 6 carbon atoms, or a substituted or unsubstituted aryl group with 6 to 30 carbon atoms; an asterisk (*) represents a bond; and Ar 21 represents a substituted or unsubstituted aryl group with 6 to 30 carbon atoms or a substituted or unsubstituted heteroaryl group with 1 to 30 carbon atoms. Organic compound according to claim 7, wherein at least one of R30 to R34 represents a substituted or unsubstituted phenyl group, and wherein at least one of R35 to R39 represents a substituted or unsubstituted phenyl group. Organic compound according to claim 7, wherein the organic compound is represented by the general formula (G4): and where R 40 to R 49 each independently represent hydrogen, an alkyl group with 1 to 6 carbon atoms, a cycloalkyl group with 3 to 10 carbon atoms, an alkoxy group with 1 to 6 carbon atoms, or a substituted or unsubstituted aryl group with 6 to 15 carbon atoms. Organic compound according to claim 7, wherein the organic compound is represented by the structural formula (100): Light-emitting device comprising the organic compound according to claim 7. Light-receiving device comprising the organic compound according to claim 7. Organic compound represented by the general formula (G5): where: Ar 1 any one of the general formulas (g1-1), (g1-2) and (g1-3); R 1 to R 8 and R 30 to R 51 each independently represent hydrogen, an alkyl group with 1 to 6 carbon atoms, a cycloalkyl group with 3 to 10 carbon atoms, an alkoxy group with 1 to 6 carbon atoms, or a substituted or unsubstituted aryl group with 6 to 15 carbon atoms; R 2 the general formula (g2-1) or (g2-3); R 111 to R 120 , R 211 to R 220 and R 311 to R 320 each independently represent hydrogen, an alkyl group with 1 to 6 carbon atoms, a cycloalkyl group with 3 to 10 carbon atoms, an alkoxy group with 1 to 6 carbon atoms, a substituted or unsubstituted aryl group with 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group with 1 to 30 carbon atoms; any one of R 111 , R 112 , R 114 and R 119 , any of R 212 , R 214 and R 215 as well as any one of R 312 , R 314 and R 315 each represent a bond; R 121 to R 128 and R 321 to R 328 each independently represent hydrogen, an alkyl group with 1 to 6 carbon atoms, an alkoxy group with 1 to 6 carbon atoms, or a substituted or unsubstituted aryl group with 6 to 30 carbon atoms; an asterisk (*) represents a bond; and Ar 21 represents a substituted or unsubstituted aryl group with 6 to 30 carbon atoms or a substituted or unsubstituted heteroaryl group with 1 to 30 carbon atoms. Organic compound according to claim 13, wherein, where R50 and R51 are each a substituted or unsubstituted aryl group having 6 to 15 carbon atoms, R50 and R51 are bonded together to form a ring. Organic compound according to claim 13, wherein R114, R214 and R314 each represent a bond. Organic compound according to claim 13, wherein the organic compound is represented by the structural formula (101): Light-emitting device comprising the organic compound according to claim 13. Light-receiving device comprising the organic compound according to claim 13.

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