Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component

Abstract

Optoelectronic semiconductor component (1) comprising - a carrier (2), - at least one multi-pixel semiconductor chip (3) for emitting electromagnetic radiation, wherein the multi-pixel semiconductor chip (3) is arranged on the carrier (2), and wherein the multi-pixel semiconductor chip (3) has two or more individually controllable pixels (4), - a wavelength conversion element (5) for at least partially converting the primary radiation emitted by the multipixel semiconductor chip (3) into electromagnetic secondary radiation, wherein - an active zone of the multi-pixel semiconductor chip (3) extends continuously over several of the pixels (4), - the wavelength conversion element (5) is arranged downstream of the semiconductor chip (3) in the radiation direction, - each of the pixels (4) is suitable for generating primary radiation, - the wavelength conversion element (5) has a structuring into sub-regions (5A, 5B, 5C, 5D), - each sub-area (5A, 5B, 5C, 5D) of the wavelength conversion element (5) is uniquely assigned an individually controllable pixel (4) of the semiconductor chip (2), and - the wavelength conversion element (5) is formed in one piece.

Description

[0001] The publications DE 10 2009 037 186 A1, WO 2006 / 097876 A1 and US 2004 / 0145308 A1 describe optoelectronic semiconductor components.

[0002] An optoelectronic semiconductor component is specified. Furthermore, a method for producing an optoelectronic semiconductor component is specified.

[0003] It is an object of the present application to provide an optoelectronic semiconductor component, or component for short, that is particularly efficient. Furthermore, it is an object of the present application to provide a method for producing a particularly efficient optoelectronic semiconductor component.

[0004] According to one aspect, the semiconductor component is preferably designed for use in projection and / or headlight applications. For example, the component can be used as a light source or part of a light source in a car headlight or an optical projection device.

[0005] The component has a carrier. The component further has a semiconductor chip. The semiconductor chip is arranged on the carrier. The semiconductor chip is attached to the carrier. The semiconductor chip can be attached, for example, by gluing, soldering, silver sintering, using a direct bonding process, or by contacting via contact bumps.

[0006] The carrier serves to mechanically stabilize the semiconductor chip. A growth substrate for the preferably epitaxial deposition of a semiconductor layer sequence of the semiconductor chip is therefore not required for stabilization and can therefore be removed during component manufacturing.

[0007] The semiconductor chip is preferably a semiconductor chip based on a III-V semiconductor material. The semiconductor chip is preferably a light-emitting diode (LED) chip. The semiconductor chip is suitable for emitting electromagnetic radiation. The semiconductor chip preferably emits colored light. However, the semiconductor chip can also emit ultraviolet (UV) radiation.

[0008] The semiconductor chip has an active zone. The active zone is designed to emit electromagnetic radiation. The semiconductor chip preferably has two or more elements, or pixels or image points. The semiconductor chip is preferably a multipixel semiconductor chip. The active zone of the semiconductor chip preferably extends continuously across several of the elements, in particular across all elements. The elements are preferably identical in terms of their material composition and layer thicknesses, except for manufacturing-related variations that may occur in a lateral direction across the component.

[0009] The elements are suitable for generating electromagnetic radiation, in particular primary electromagnetic radiation. The elements can be controlled individually. The carrier preferably has two or more switches, each of which is provided for controlling at least one element. The switches are designed, for example, as a single transistor or as a circuit with several transistors and capacitors. The switches are provided for electrical connection to the individually controllable elements. During operation of the component, each element can be controlled by means of the associated switch. During operation, several elements can thus be controlled simultaneously, in particular all elements can be controlled simultaneously. Furthermore, it is possible to operate different elements independently of one another at different times.

[0010] Preferably, a surface of the semiconductor chip or elements facing away from the carrier is free of electrical contact points such as bond pads. This reduces the risk of shadowing and / or absorption of some of the electromagnetic radiation emitted by the elements during operation by the electrical contact points.Complex process steps associated with the production of such a contact point, such as polishing the surface of the semiconductor chip facing away from the carrier, and in particular the surface of the elements, and / or the production of metal bridges for current expansion, which have a large thickness but a small lateral extent, and / or measures that limit or prevent current injection into regions of the semiconductor chips below the electrical contact point, such as the formation of an electrically insulating layer, a Schottky barrier, and / or an ion-implanted region below the contact point, can advantageously be dispensed with. This can preferably be achieved by supplying both types of charge carriers to the semiconductor chips or the elements from the side facing the carrier.

[0011] The component further comprises a wavelength conversion element. The wavelength conversion element is arranged downstream of the semiconductor chip in the radiation direction, in particular in the form of a wavelength conversion layer. The wavelength conversion element is arranged on the surface of the semiconductor chip facing away from the carrier. It can be directly adjacent to the semiconductor chip or it can be attached to the semiconductor chip by means of a connecting means.

[0012] The wavelength conversion element is designed to at least partially convert the primary radiation emitted by the semiconductor chip and, in particular, by the elements into electromagnetic secondary radiation. In other words, the wavelength conversion element is designed to partially or completely convert the radiation emitted by the semiconductor chip or the elements into further radiation with a different, in particular longer, wavelength than the emitted radiation.

[0013] The wavelength conversion element has a structure. The structure of the wavelength conversion element is preferably designed and arranged in such a way that crosstalk of the radiation emitted by the various individually controllable elements of the semiconductor chip is prevented.

[0014] The wavelength conversion element is, in particular, structured into subregions. In other words, the wavelength conversion element is designed such that it is subdivided into subregions. The subdivision into subregions represents a lateral subdivision or a subdivision in the lateral direction of the wavelength conversion element. "Lateral direction" in this context means a direction parallel to the main extension direction of the component. "Vertical direction" is a direction perpendicular to the main extension direction of the component, thus referring, for example, to the direction along which the thickness of the component is determined.

[0015] At least one individually controllable element of the semiconductor chip is assigned to each subregion of the wavelength conversion element. A number of subregions preferably corresponds to a number of individually controllable elements of the semiconductor chip. The assignment of the subregions to the elements is, in particular, one-to-one. In other words, in the case of a one-to-one assignment, exactly one individually controllable element is assigned to each subregion, and / or vice versa.

[0016] By structuring the wavelength conversion element, the risk of optical crosstalk between neighboring elements during component operation can be reduced. This means that each element stimulates the generation of secondary radiation only in the assigned sub-area of ​​the wavelength conversion element, within the manufacturing tolerance. Adjacent sub-areas of the wavelength conversion element are hardly or not at all pumped by primary radiation from the not directly assigned element. This ensures the required contrast ratio and sharp optical separation between the individual elements. The clear separation between the individual elements allows different projected illumination patterns on the evaluation plane (for example, on a road) to be better contoured and distinguished.

[0017] In addition, the structuring ensures improved color-angle characteristics of the component. This improved color-angle characteristic eliminates or at least significantly reduces color deviation effects when switching between different projected illumination patterns.

[0018] According to at least one embodiment of the component, the wavelength conversion element is formed in one piece. In other words, the structured wavelength conversion element has contiguous subregions. Separating the wavelength conversion element into individual, non-contiguous subregions or even providing multiple wavelength conversion elements is not necessary. Thus, the component has a particularly simple design.

[0019] According to at least one embodiment of the component, the wavelength conversion element consists of a ceramic. For example, the wavelength conversion element can comprise or consist of a cerium-doped yttrium aluminum garnet, abbreviated to YAG, and / or a lutetium aluminum garnet, abbreviated to LuAG, and / or a lutetium yttrium aluminum garnet, abbreviated to LuYAG. Likewise, the wavelength conversion element can comprise a doped silicon nitride or silicon oxynitride or silicate or aluminate. For example, the wavelength conversion element contains a Eu 2+doped alkaline earth silicon nitride and / or alkaline earth aluminum silicon nitride, where the alkaline earth metal is, for example, barium, calcium, or strontium. These materials are characterized primarily by their high stability. Furthermore, ceramics are characterized by their high thermal conductivity. This has a particularly advantageous effect on the thermal management of the semiconductor chip. Furthermore, the wavelength conversion element can also comprise a correspondingly doped semiconductor material, for example, a II-VI compound semiconductor material such as ZnSe or a III-V compound semiconductor material such as AlInGaN.

[0020] Alternatively, the wavelength conversion element can also comprise a phosphor in a matrix material. The matrix material can be, for example, a plastic, a glass, or a ceramic. The phosphor can be present in the matrix material, for example, in the form of particles. The phosphor can, in turn, be a ceramic phosphor and / or an organic phosphor.

[0021] According to at least one embodiment of the component, the wavelength conversion element has one or more trenches, for example, three or four trenches. The respective trench is preferably formed on a surface of the wavelength conversion element facing away from the semiconductor chip. Alternatively, the respective trench can also be formed on a surface of the wavelength conversion element facing the semiconductor chip. The respective trench preferably represents an indentation or opening on the surface of the wavelength conversion element. The trench preferably extends from the opening on the surface of the wavelength conversion element into the wavelength conversion element.

[0022] However, the respective trench does not completely penetrate the wavelength conversion element. The wavelength conversion element preferably has a height or vertical extent of greater than or equal to 1 µm, for example 10 µm, and less than or equal to 300 µm, for example 100 µm. The respective trench has a depth or vertical extent such that it penetrates the wavelength conversion element by 80% or less, for example by 70% or 60%. Vertical extent is understood, for example, to mean an extent perpendicular to a main extension plane of the wavelength conversion element. In particular, a "vertical" direction can be a direction toward or away from the carrier.

[0023] The respective trench further has a depth such that it penetrates the wavelength conversion element by at least 20%, for example by 25% or 30%. In other words, the trench preferably has a depth or vertical extent of between at least 0.2 µm and at most 240 µm, for example 80 µm, depending on the vertical extent of the wavelength conversion element.

[0024] The wavelength conversion element has a width or lateral or horizontal extent of greater than or equal to 100 µm and less than or equal to 10 cm.

[0025] The partial regions of the wavelength conversion element each have a width of greater than or equal to 2 µm, for example 10 µm, and less than or equal to 500 µm, for example 100 µm.

[0026] The respective trench has a width or lateral extent of less than or equal to 20 µm, for example, 10 µm or 1 µm. In other words, the lateral extent of the respective trench is small compared to the lateral extent of the wavelength conversion element. The width of the respective trench is defined, for example, at the widest point of the trench.

[0027] The trenches are designed to at least partially separate the subregions of the wavelength conversion element from one another. The trenches are preferably arranged equidistant from one another. Consequently, the individual subregions partially separated from one another by the trenches preferably have the same size or spatial extent.

[0028] The trenches can have different profiles. For example, the trenches can be V-shaped. However, rectangular or round trenches are also conceivable. In particular, any trench shape suitable for structuring the wavelength conversion element into subregions is conceivable.

[0029] The grooves in the wavelength conversion element prevent crosstalk between the radiation emitted by the various elements of the semiconductor chip. This creates a particularly efficient component that ensures sharp optical separation between the individual elements.

[0030] According to at least one embodiment of the component, the respective trench has two flanks arranged opposite one another. The flanks form the inner surface of the respective trench and run, for example, transversely to the main extension plane of the wavelength conversion element. The flanks are coated with a non-transparent material. Preferably, the flanks are coated with a mirror material, for example, with silver (Ag), aluminum (Al), a dielectric layer, or a layer sequence comprising a dielectric and a reflective metal. The non-transparent material can also have a diffuse scatterer or a diffuse scattering material in a transparent matrix material. Alternatively, the non-transparent material can also have a refractive index such that radiation incident on the non-transparent material is totally reflected by the non-transparent material.In other words, the non-transparent material can be totally reflective.

[0031] The non-transparent material advantageously contributes to preventing crosstalk between the radiation emitted by two adjacent elements of the semiconductor chip. This can be achieved, for example, by reflecting primary and / or secondary radiation by the non-transparent material.

[0032] According to at least one embodiment of the component, the respective trench is filled. Preferably, the trench is completely filled. In particular, the trench is filled such that a surface of the trench facing away from the semiconductor chip is flush with the surface of the wavelength conversion element facing away from the semiconductor chip, and / or a surface of the trench facing the semiconductor chip is flush with the surface of the wavelength conversion element facing the semiconductor chip.

[0033] The trench is filled with a backfill material. The trench can be filled, for example, with the non-transparent material described above. In this case, the non-transparent material forms the backfill material. However, any other material suitable for filling the trenches can also serve as the backfill material. The backfill material preferably has a thermal expansion coefficient that matches the thermal expansion coefficient of the wavelength conversion element.

[0034] The backfill material can be applied to the layer of non-transparent material described above. In this case, the non-transparent material is directly adjacent to the backfill material. Alternatively, the trench can be filled with the backfill material without any non-transparent material being applied to the flanks. In this case, the material of the wavelength conversion element is directly adjacent to the backfill material.

[0035] The surface of the trench facing away from the semiconductor chip is filled so that it is flush with the surface of the wavelength conversion element facing away from the semiconductor chip. In other words, the surface of the wavelength conversion element facing away from the semiconductor chip is flat or planar. This facilitates further system construction or the connection of the component with micro-optical elements, such as a lens, for shaping the spatial light distribution.

[0036] For example, the trench can be filled with glass. Filling the trenches can increase the thermal conductivity of the wavelength conversion element, particularly in the lateral direction, which has a beneficial effect on the thermal management of the semiconductor chip.

[0037] According to at least one embodiment of the component, the wavelength conversion element is structured into a plurality of microlenses, for example, two, three, or four microlenses. Each microlens is convex. The individual microlenses are preferably at least partially separated from one another by the trenches described above. Each of the microlenses is advantageously assigned to an individually controllable element of the semiconductor chip.

[0038] This special shaping of the partial areas of the wavelength conversion element can achieve an improved color-versus-angle characteristic of the emitted radiation.

[0039] According to a further aspect, an optoelectronic semiconductor component is specified. The component is designed for use in projection and / or headlight applications, for example, in an adaptive car headlight. However, the component can also be used for flash functions, solid-state lighting (SSL), or for high-power LEDs. In this context, a high-power LED is understood to mean that the semiconductor chip can have a power consumption of at least 0.5 W, in particular at least 3 W.

[0040] The component has a carrier. All features described in connection with the carrier of the component described above also apply to the carrier described here.

[0041] The component further comprises a semiconductor chip. The semiconductor chip is arranged on the carrier. The semiconductor chip is preferably a semiconductor chip based on a III-V semiconductor material, preferably an LED chip. The semiconductor chip serves to emit electromagnetic radiation, preferably light. The semiconductor chip preferably emits colored light. Alternatively, the semiconductor chip can also emit UV radiation, for example.

[0042] The semiconductor chip has at least one individually controllable element. The individually controllable element is suitable for generating primary radiation. All features described in connection with an individually controllable element of the component described above also apply to the individually controllable element described here. The component can also have a plurality of individually controllable elements, for example, two, three, four, or more individually controllable elements. The semiconductor chip can be a multipixel semiconductor chip.

[0043] The component has a wavelength conversion element. The wavelength conversion element is arranged downstream of the semiconductor chip in the radiation direction. The wavelength conversion element is designed and arranged to at least partially convert the primary radiation emitted by the semiconductor chip or the individually controllable element into electromagnetic secondary radiation. The wavelength conversion element is formed in one piece.

[0044] The wavelength conversion element can be made of a ceramic. Alternatively, the wavelength conversion element can comprise a phosphor in a matrix material, such as glass, plastic, or ceramic.

[0045] According to a further aspect, a method for producing an optoelectronic semiconductor component, preferably an optoelectronic semiconductor component described here, is described. In particular, the semiconductor component produced thereby preferably corresponds to the semiconductor component described under the first aspect. All features disclosed for this semiconductor component are therefore also disclosed for the method, and vice versa. The method comprises the following steps: In a first step, the carrier described above is provided. The carrier serves to mechanically stabilize the semiconductor chip. The carrier can have a plurality of switches. The number of switches preferably corresponds to the number of individually controllable elements of the semiconductor chip.

[0046] In a further step, the semiconductor chip described above is provided. The semiconductor chip has two or more individually controllable elements. The semiconductor chip is preferably a multipixel semiconductor chip. The semiconductor chip is arranged on the carrier. Furthermore, the semiconductor chip is electrically connected to the switches arranged in the carrier.

[0047] In a further step, a plate made of converter material is provided. The plate is formed in one piece. In particular, the plate does not consist of multiple parts. The plate is flat. The plate is unstructured. In particular, the plate does not yet have any structuring into subregions at this point. The plate is preferably made of a ceramic, for example, LuAG or YAG. However, the plate can also be made of a plastic, for example, silicone, PC, or acrylate, which contains phosphor particles.

[0048] In a further step, the plate is structured to form the wavelength conversion element described above. After this step, the wavelength conversion element is structured into subregions. Preferably, the number of subregions of the wavelength conversion element corresponds to the number of individually controllable elements. The wavelength conversion element obtained by the structuring is a single piece. In other words, the plate is not divided into subregions by the structuring.

[0049] In a further step, the wavelength conversion element is arranged or attached to the semiconductor chip. The arrangement is carried out in such a way that each subregion of the wavelength conversion element is assigned an individually controllable element of the semiconductor chip. In particular, each subregion is preferably arranged vertically above an individually controllable element. Alternatively, the wavelength conversion element can also be first attached to the semiconductor chip and then structured as described above.

[0050] Structuring the wavelength conversion element reduces the risk of optical crosstalk between neighboring elements on the semiconductor chip. This ensures an optimal contrast ratio and sharp optical separation between the individual elements. Structuring also improves the component's color-angle characteristics.

[0051] According to at least one embodiment, the plate comprises a ceramic. The plate is preferably structured in a green body state, i.e., before firing the plate. The structuring of the plate is preferably carried out by forming one or more trenches in the plate.

[0052] If the green body is formed, for example, by tape casting, the desired trench shape is achieved by embossing into the green film (hot embossing).

[0053] Alternatively, the slip can be injection molded to achieve the desired trench shape (simple molding, compression molding). In this process, the liquid converter mass is poured into a corresponding mold (slip casting). The resulting cast body corresponds to the green body described above.

[0054] In a further step, the plate is baked to finally produce the wavelength conversion element.

[0055] According to at least one embodiment, the plate comprises a ceramic. The plate is preferably structured in a green body state. Structuring is performed by molding the slurry into a microlens shape. The molding process preferably produces a plate with a plurality of microlenses. In a further step, the plate is baked to ultimately produce the wavelength conversion element.

[0056] According to at least one embodiment, the plate comprises a ceramic. The structuring of the plate takes place in the following steps: First, a baked ceramic plate is provided. In this embodiment, the structuring is therefore not performed in the green state of the plate.

[0057] In a further step, cylindrical photoresist islands (photoresist posts) are defined on the plate. This is preferably done using photolithography.

[0058] The plate with the photoresist islands is placed in an oven. The plate is then heated to create microlenses from the photoresist islands. This is a common process for microlens fabrication. The technology is described, for example, in the books "Dan Daly: Microlens Arrays, ISBN-10 0748408932" and "Sinzinger / Jahns: Microoptics, ISBN-10 3527403558," the disclosures of which are hereby incorporated by reference.

[0059] In a further step, the photoresist microlenses are transferred into the plate. This is preferably done using reactive ion etching.

[0060] Alternatively, the microlens structuring of the ceramic plate can also be carried out in a green body state of the plate by a molding process, as already described.

[0061] In the following, the optoelectronic component and the method are explained in more detail using exemplary embodiments and the associated figures. The Fig. 1 shows a cross-section of an optoelectronic semiconductor component, The Fig. 2A shows a cross section of an optoelectronic semiconductor component according to a second embodiment, The Fig. 2B shows a cross section of an optoelectronic semiconductor component according to a further embodiment, The Fig. 3 shows a cross section of an optoelectronic semiconductor component according to a further embodiment,

[0062] Identical, similar, or functionally identical elements are provided with the same reference numerals in the figures. The figures and the relative sizes of the elements depicted in the figures are not to be considered to scale. Rather, individual elements may be exaggerated for clarity and / or clarity.

[0063] Fig. Figure 1 shows an optoelectronic semiconductor component 1 comprising a semiconductor chip 3. The semiconductor chip 3 emits visible radiation or light. The semiconductor chip 3 is preferably an LED chip. In an alternative embodiment, the semiconductor chip 3 can also emit non-visible radiation, for example, UV radiation.

[0064] The semiconductor chip 3 has individually controllable elements 4, or pixels or image points. The elements 4 emit electromagnetic radiation, preferably light.

[0065] The display device 1 further comprises a carrier 2. The semiconductor chip 3 is arranged on the carrier 2 and secured thereto. The semiconductor chip 3 can be secured, for example, by soldering, silver sintering, a direct bonding process, or by contacting via contact bumps.

[0066] A plurality of switches for electrically controlling the elements 4 are preferably integrated into the carrier 2 (not explicitly shown). The switches are designed, for example, as a single transistor or as a circuit with multiple transistors and capacitors. The switches are provided for electrical connection to the individually controllable elements 4. The carrier 2 can be designed, for example, as a silicon carrier, in which the switches can be implemented using CMOS (Complementary Metal Oxide Semiconductor) technology.

[0067] In addition to the electrical control of the elements 4 of the semiconductor chip 3, the carrier 2 serves to mechanically stabilize the semiconductor chip 3. A growth substrate for the preferably epitaxial deposition of a semiconductor layer sequence of the semiconductor chip 3 is therefore not required for stabilization and can therefore be removed during the production of the components 1.

[0068] The component 1 comprises a wavelength conversion element 5. The wavelength conversion element 5 is formed as a single piece. In other words, the wavelength conversion element 5 is not composed of several individual parts, but is formed, for example, from a plate made of converter material.

[0069] The wavelength conversion element 5 contains, for example, particles of a luminescent material (e.g., phosphor) in a matrix made of a plastic, such as PC, acrylate, epoxy resin, or silicone material, or of glass or ceramic. Alternatively, the wavelength conversion element 5 can also be made of a ceramic (e.g., YAG or LuAG). The wavelength conversion element 5 has a height or vertical dimension of greater than or equal to 1 µm and less than or equal to 300 µm, for example, 50 µm.

[0070] The wavelength conversion element 5 is arranged downstream of the semiconductor chip 3 in the radiation direction. The wavelength conversion element 5 at least partially converts the primary radiation emitted by the semiconductor chip 3 or by the elements 4 into electromagnetic secondary radiation.

[0071] The wavelength conversion element 5 is structured. In particular, the wavelength conversion element 5 has subregions 5A to 5D. Each element 4 is assigned one of the subregions 5A to 5D. In this exemplary embodiment, the number of subregions 5A to 5D corresponds to the number of elements 4. In an alternative exemplary embodiment (not explicitly shown), the number of subregions 5A to 5D can also be different from the number of elements 4. For example, the number of subregions 5A to 5D can be smaller than the number of elements 4. The subregions 5A to 5D have the same shape. In particular, the subregions 5A to 5D have the same horizontal and vertical extent. The partial regions (5A, 5B, 5C, 5D) have a width or horizontal or lateral extent of greater than or equal to 3 µm and less than or equal to 200 µm, for example 100 µm.

[0072] The wavelength conversion element 5 has trenches 6 formed on a surface of the wavelength conversion element 5 facing away from the semiconductor chip 3. The trenches 6 each have two flanks 6A, 6B arranged opposite one another.

[0073] The trenches 6 represent bulges or hollows in the wavelength conversion element 5. Thus, the surface of the wavelength conversion element 5 facing away from the semiconductor chip 3 is not flat. Rather, this surface has indentations, i.e., the aforementioned trenches 6. The subregions 5A to 5D are each partially separated from one another by one of the trenches 6.

[0074] In this exemplary embodiment, the trenches 6 are V-shaped. However, the trenches 6 can also have any other shape. For example, the trenches 6 can be rectangular or round. The trenches 6 each have the same shape and the same spatial extent.

[0075] The trenches 6 do not completely penetrate the wavelength conversion element 5. For example, the trenches 6 penetrate the wavelength conversion element 5 to a maximum of 80%, for example, 70% or 60%. The trenches 6 penetrate the wavelength conversion element 5 to at least 20%, for example, 30% or 40%. In particular, the trenches 6 do not cause the wavelength conversion element 5 to be separated into individual parts, but merely to be structured into the individual regions 5A to 5D.

[0076] By structuring the wavelength conversion element 5, the risk of optical crosstalk between radiation emitted by adjacent elements 4 during operation of the component 1 can be reduced.

[0077] The Fig. 2A shows a cross section of a component 1 according to a second embodiment.

[0078] The component 1 shown here differs from the component 1 from Fig. 1 in that the flanks 6A, 6B of the trenches 6 are coated with a non-transparent material 7. The non-transparent material 7 is, for example, a mirror layer.

[0079] Furthermore, the trenches 6 can, in particular, be completely filled. The trenches 6 are filled with a filling material 8, for example, glass or a diffuse scattering material embedded in a transparent matrix material. When using a diffuse scattering material embedded in a transparent matrix material, the transparent material 7 can be omitted. This, for example, achieves improved thermal conductivity of the wavelength conversion element 5 in the lateral direction. The filling material 8 directly borders the non-transparent material 7.

[0080] By filling the trenches 6, the surface of the wavelength conversion element 5 facing away from the semiconductor chip 3 is flat. In particular, the surface no longer has any indentations. This facilitates further system construction or the connection of the wavelength conversion element 5 to other elements, for example, a lens (not explicitly shown).

[0081] The Fig. 2B shows a cross section of a component 1 according to a further embodiment.

[0082] The component 1 shown here differs from the component 1 from Fig. 2A in that the trenches 6 are formed on the surface of the wavelength conversion element 5 facing the semiconductor chip 3. In other words, the wavelength conversion element 5 is structured into the subregions (5A, 5B, 5C, 5D) and is arranged such that the trenches 6 face the semiconductor chips 3. This can be achieved, for example, by first structuring the wavelength conversion element 5 and then arranging it on the semiconductor chip 3. In this case, it is possible for the trenches 6 to be completely filled. In particular, each trench 6 is filled such that a surface of the material in the trench facing the semiconductor chip is flush with the surface of the wavelength conversion element facing the semiconductor chip.

[0083] The Fig. 3 shows a cross section of a component 1 according to a further embodiment.

[0084] The component 1 shown here differs from the component 1 from Fig. 1 in that the partial regions 5A to 5D are convex. In particular, the partial regions 5A to 5D are designed as convex microlenses 9.

[0085] The microlenses 9 are separated from each other by the grooves 6. The grooves 6 are rounded. Alternatively (not explicitly shown), the grooves 6 formed between the microlenses 9 can also be V-shaped or rectangular.

[0086] The trenches 6 have a smaller depth in this embodiment than in the Fig. 1. For example, the trenches 6 penetrate the wavelength conversion element 5 by 20% or 25% in this embodiment. In an alternative embodiment (not explicitly shown), however, the trenches 6 can also be formed deeper in this wavelength conversion element 5 and penetrate the wavelength conversion element 5 by, for example, 70% or 80%.

[0087] The Fig. The components 1 described in 1 to 3 are manufactured as follows: In a first step, the carrier 2 described above is provided. The semiconductor chip 3 is arranged on the carrier 2 and attached thereto, for example, by soldering.

[0088] In the next step, a plate made of converter material, such as ceramic, is prepared. The plate is formed in one piece.

[0089] In a further step, the plate is structured to form the wavelength conversion element 5. Structuring in this context means that the plate is not separated into individual parts. Rather, the plate is divided into one or more subregions 5A to 5D.

[0090] To do this in the Fig. 1 to 3, the plate is structured such that the wavelength conversion element 5 thus obtained has a structuring into the partial regions 5A to 5D, wherein an individually controllable element 4 of the semiconductor chip 3 is assigned to each partial region 5A to 5B of the wavelength conversion element 5 in the further process.

[0091] For the production of the Fig. 1 and Fig. 2, the plate can be structured, for example, in a green body state, i.e., before firing the plate. The structuring of the plate is achieved by forming the Fig. 1 and Fig. 2 shown trenches 6 in the plate.

[0092] If the green body is produced by film casting, the formation of the trenches 6 can be carried out, for example, by embossing into the green film.

[0093] Alternatively, the slip can be injection molded, thereby forming the trenches 6. In this process, the liquid converter mass for the plate is introduced into a corresponding mold, thereby forming the trenches 6 in the desired shape and spatial extent.

[0094] In a further step, the plate is then baked. Afterward, in an optional step, the flanks 6A and 6B can be coated with the non-transparent material 7 and the trenches 6 can be filled (see Fig. 2).

[0095] For the production of the Fig. The plate can be structured in a green body state for the wavelength conversion element 5 shown in Figure 3. Structuring is achieved by molding the slurry into the plurality of microlenses 9, which correspond to the regions 5A to 5D of the wavelength conversion element 5.

[0096] In a further step, the plate is then baked to finally produce the wavelength conversion element 5.

[0097] For the production of the Fig. However, using the wavelength conversion element 5 shown in Figure 3, the plate can also be structured in the baked state, i.e., not in the green body state. First, cylindrical photoresist islands are defined on the plate, preferably by photolithography. The plate with the photoresist islands is then placed in a furnace and heated to create the microlenses 9 from the photoresist islands. The photoresist microlenses are then transferred into the plate. This is preferably done by reactive ion etching.

[0098] After structuring and thus the production of a corresponding wavelength conversion element 5 (see Fig. 1 to 3), this is arranged on the semiconductor chip 3. The arrangement is carried out in such a way that a subregion 5A to 5D is preferably assigned to each individually controllable element 4. Alternatively, the structuring of the plate can also be carried out after the plate has been arranged on the semiconductor chip 3.

[0099] In a final step, 5 optical elements can be arranged downstream of the wavelength conversion element. List of reference symbols 1 semiconductor component 2 carriers 3 semiconductor chip 4 Element 5 wavelength conversion element 5A sub-area 5B sub-area 5C sub-area 5D sub-area 6 trench 6A flank 6B flank 7 Non-transparent material 8 Backfill material 9 Microlens

Claims

[1] Optoelectronic semiconductor component (1) comprising - a carrier (2), - at least one multi-pixel semiconductor chip (3) for emitting electromagnetic radiation, wherein the multi-pixel semiconductor chip (3) is arranged on the carrier (2), and wherein the multi-pixel semiconductor chip (3) has two or more individually controllable pixels (4), - a wavelength conversion element (5) for at least partially converting the primary radiation emitted by the multipixel semiconductor chip (3) into electromagnetic secondary radiation, wherein - an active zone of the multi-pixel semiconductor chip (3) extends continuously over several of the pixels (4), - the wavelength conversion element (5) is arranged downstream of the semiconductor chip (3) in the radiation direction, - each of the pixels (4) is suitable for generating primary radiation, - the wavelength conversion element (5) has a structuring into sub-regions (5A, 5B, 5C, 5D), - each sub-area (5A, 5B, 5C, 5D) of the wavelength conversion element (5) is uniquely assigned an individually controllable pixel (4) of the semiconductor chip (2), and - the wavelength conversion element (5) is formed in one piece. [2] Optoelectronic semiconductor component (1) according to claim 1, wherein the wavelength conversion element (5) has one or more trenches (6), wherein the wavelength conversion element (5) has a height of greater than or equal to 1 µm and less than or equal to 300 µm, and wherein the respective trench (6) has a depth such that it penetrates the wavelength conversion element (5) to at least 20% and a maximum of 80%. [3] Optoelectronic semiconductor component (1) according to claim 1 or 2, wherein the structuring of the wavelength conversion element (5) is designed and arranged such that crosstalk of the radiation emitted by the various individually controllable pixels (4) of the multi-pixel semiconductor chip (3) is prevented. [4] Optoelectronic semiconductor component (1) according to claim 2 or 3, wherein the partial regions (5A, 5B, 5C, 5D) have a width of greater than or equal to 3 µm and less than or equal to 200 µm, and wherein the respective trench (6) has a width of less than or equal to 20 µm. [5] Optoelectronic semiconductor component (1) according to one of claims 2 to 4, wherein the respective trench (6) has two flanks (6A, 6B) arranged opposite one another, and wherein the flanks (6A, 6B) are coated with a non-transparent material (7). [6] Optoelectronic semiconductor component (1) according to one of claims 2 to 5, wherein the respective trench (6) is filled with a filling material (8). [7] Optoelectronic semiconductor component (1) according to one of claims 1 to 6, wherein the wavelength conversion element (5) is structured into a plurality of microlenses (9), and wherein the respective microlens (9) is convex. [8] Optoelectronic semiconductor component (1) according to one of the preceding claims, wherein the wavelength conversion element (5) consists of a ceramic, or wherein the wavelength conversion element (5) comprises a phosphor in a matrix material. [9] Optoelectronic semiconductor component (1) according to one of claims 1 to 8, wherein both charge carrier types are supplied to the multi-pixel semiconductor chip (3) from a side of the multi-pixel semiconductor chip (3) facing the carrier (2). [10] Optoelectronic semiconductor component (1) according to one of claims 1 to 9, wherein the carrier (2) has two or more switches, each of which is provided for controlling at least one of the individually controllable pixels (4). [11] Optoelectronic semiconductor component (1) according to one of claims 1 to 10, wherein the active zone of the multipixel semiconductor chip (3) extends continuously over all pixels (4). [12] Method for producing an optoelectronic semiconductor component (1) according to one of claims 1 to 11, comprising the following steps: - Providing the carrier (2), - arranging the multi-pixel semiconductor chip (3) on the carrier (2), wherein the multi-pixel semiconductor chip (3) has two or more individually controllable pixels (4), - Providing a plate of converter material, - Structuring the plate to form the wavelength conversion element (5) so that the wavelength conversion element (5) has a structure in partial regions (5A, 5B, 5C, 5D), - Arranging the wavelength conversion element (5) on the multipixel semiconductor chip (3). [13] Method according to claim 12, wherein the structuring of the plate is carried out by forming one or more trenches (6) in the plate, and wherein the formation of the trenches (6) is carried out by embossing or molding the plate in a green body state of the plate. [14] Method according to claim 12, wherein the structuring of the plate is carried out in the following steps: - Definition of cylindrical photoresist islands on the plate by photolithography, - Heating the plate to create microlenses from the photoresist islands, - Transferring the photoresist microlenses into the plate using reactive ion etching. [15] The method of claim 12, wherein the structuring is carried out by molding the plate in a green body state, and wherein a plurality of microlenses are produced during the molding process.

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