POWER CONVERSION DEVICE

Abstract

Power conversion device (1) with: a plurality of semiconductor elements (2); and a control circuit unit (3) configured to control switching of the semiconductor elements (2), wherein the semiconductor elements (2) upper arm semiconductor elements (2 H ), which are arranged on one side of the upper arm, and forearm semiconductor elements (2 L ) arranged at a forearm side, by the control circuit unit (3) a plurality of the upper arm semiconductor elements (2 H ) connected in parallel to each other, is caused to perform switching at the same time, and a plurality of the underarm semiconductor elements (2 L ) connected in parallel to each other, are caused to perform a switching operation at the same time, the control circuit unit (3) comprises a drive circuit (30) each electrically connected to the plurality of semiconductor elements (2) which perform switching at the same time, control wirings (4 G ), the control electrodes (21 G ) of the semiconductor elements (2) to the control circuit (30), and reference wiring (4 KE ), the reference electrodes (21 KE ) of the semiconductor elements (2) to the control circuit (30), and a parasitic inductance (L KE ) in the reference wiring (4 KE ) is made smaller than a parasitic inductance (L G ) in the control wiring (4 G ), where a plurality of connecting elements (5) are formed for electrically connecting the control circuit unit (3) to the semiconductor elements (2) in the control circuit unit (3), the drive circuit (30) is formed at positions adjacent to connector groups (50) configured with the plurality of connectors in an arrangement direction of the plurality of connectors (5), the connecting elements (5) reference connecting elements (5 KE ) for electrical connection to the reference electrodes (21 KE ) of the semiconductor elements (2) and control connection elements (5 G ) for electrical connection to the control electrodes (21 G ), wherein the reference connecting elements (5 KE ) with the control circuit (30) by means of the reference wiring (4 KE ), wherein the control connection elements (5 G ) with the control circuit (30) by means of the control wiring (4 G ) are connected, and the reference connecting elements (5 KE) are formed at positions closer to the drive circuit (30) connected to the reference connection elements (5 KE ) and the control connection elements (5 G ) than the control connection elements (5 G ) in the arrangement direction.

Description

[Technical field]

[0001] The present disclosure relates to a power conversion device including a plurality of semiconductor elements and a control circuit that controls switching of the semiconductor elements. [Background of the invention]

[0002] As a power conversion device that performs power conversion between DC power and AC power, a power conversion device is known that includes semiconductor elements such as IGBTs and a control circuit unit electrically connected to the semiconductor elements (see JP 2015-139299 A). This power conversion device is configured to convert DC power into AC power by causing the semiconductor elements to perform switching through the control circuit unit described above.

[0003] A drive circuit that drives the semiconductor elements is formed in the control circuit unit. Furthermore, the control circuit unit includes reference wiring that connects reference electrodes (i.e., emitters) of the semiconductor elements to the above-described drive circuit, and control wiring that connects control electrodes (i.e., gates) of the semiconductor elements to the drive circuit. The drive circuit is configured to apply a predetermined control voltage to the control electrodes based on a potential of the above-described reference electrode. This turns on the semiconductor elements.

[0004] Recently, a power conversion device capable of obtaining a higher output current has been desired. Parallel connection of a plurality of semiconductor elements and causing the plurality of semiconductor elements to perform switching at the same time have been studied. The possibility of allowing more current to flow through the entire power conversion device, even if only a small current can be caused to flow through individual semiconductor elements, has been studied.

[0005] EP 2 541 596 A1 describes a power semiconductor module. The respective main electrodes of semiconductor switching elements, such as IGBTs, each mounted on a plurality of insulating plates, are electrically connected to each other via a conductor element. This arrangement makes it possible to suppress the occurrence of a resonant voltage due to a junction capacitance and a parasitic inductance of each semiconductor switching element.

[0006] Document CN 1 05 391 323 A describes a power conversion device and an elevator using the power conversion device. In a state where a drive circuit having a multilayer substrate enables simultaneous switching on of a plurality of semiconductor switching elements, allowing currents to flow to a loop path of a drive circuit side suppresses the promotion of current imbalance among the plurality of semiconductor switching elements.The multilayer substrate of the drive circuit, which enables simultaneous turning on and off of the plurality of semiconductor switching elements connected in parallel, is provided with a plurality of conductive layers at different positions in a thickness direction, a first conductive layer having the same potential as a second terminal (a source electrode or an emitter electrode) of a first semiconductor switching element, a second conductive layer having the same potential as a second terminal of a second semiconductor switching element, and a third conductive layer having the same potential as a first terminal (grid electrode) of a first semiconductor switching element. The third conductive layer is sandwiched between the first conductive layer and the second conductive layer. [Summary of the invention]

[0007] However, when a plurality of semiconductor elements are caused to perform switching at the same time, voltages applied to control electrodes of the semiconductor elements are likely to vary. That is, in the case where the above-described configuration is employed, a drive circuit is electrically connected to a plurality of semiconductor elements. Furthermore, when a plurality of semiconductor elements are caused to perform switching at the same time as described below, there is a possibility that potentials of the above-described reference electrodes (hereinafter also referred to as reference potentials) of the semiconductor elements may vary due to a variation or the like in recovery characteristics of flyback diodes connected in antiparallel to the semiconductor elements.Consequently, there is a possibility that a current i flows from a semiconductor element with a higher reference potential to a semiconductor element with a lower reference potential via the reference wiring described above. In this case, an induced electromotive force ΔV (=L) occurs. KE di / dt) due to a parasitic inductance L KE in the reference wiring.

[0008] Consequently, with respect to a reference electrode of a semiconductor element having a lower reference potential, a potential that becomes a reference for the driving circuit increases by ΔV (see Fig. 39). Consequently, a sum (V G + ΔV) of a control voltage V G , which occurs from the drive circuit, and ΔV is applied to a control electrode of a semiconductor element with a lower reference potential. Consequently, because a voltage higher than a normal control voltage VG is applied to the control electrode, there is a possibility that this semiconductor element may deteriorate.

[0009] Furthermore, when the induced electromotive force ΔV occurs at the reference wiring, with respect to a reference electrode of a semiconductor element having a higher reference potential, a potential that becomes a reference for the driving circuit decreases by ΔV (see Fig. 39). Consequently, only a voltage V G - ΔV is applied to a control electrode of a semiconductor element with a higher reference potential. As a result, this semiconductor element will not turn on correctly, and a decrease in the current amount is likely.

[0010] The present disclosure is directed to providing a power conversion device that can cause a plurality of semiconductor elements to perform switching at the same time and can reduce variation in voltages applied to control electrodes of the individual semiconductor elements.

[0011] This is achieved by a power conversion device according to claim 1. Advantageous further developments are specified in the dependent claims.

[0012] A first embodiment is a power conversion device comprising: a plurality of semiconductor elements; and a control circuit unit configured to control switching of the semiconductor elements. The semiconductor elements include upper arm semiconductor elements arranged at an upper arm side and lower arm semiconductor elements arranged at a lower arm side, wherein, by the control circuit unit, a plurality of the upper arm semiconductor elements connected in parallel to each other are caused to perform switching at the same time, and a plurality of the lower arm semiconductor elements connected in parallel to each other are caused to perform switching at the same time.The control circuit unit includes a drive circuit, each electrically connected to the plurality of semiconductor elements that perform switching at the same time, control wiring that connects control electrodes of the semiconductor elements to the drive circuit, and reference wiring that connects reference electrodes of the semiconductor elements to the drive circuit. A parasitic inductance in the reference wiring is made smaller than a parasitic inductance in the control wiring.

[0013] In the power conversion device, the parasitic inductance in the reference wiring is made smaller than the parasitic inductance in the control wiring.

[0014] It is therefore possible to reduce variation in voltages applied to the control electrodes of the individual semiconductor elements. That is, as described above, when the plurality of semiconductor elements connected in parallel are caused to perform switching at the same time, reference potentials of the individual semiconductor elements are likely to vary. As a result, a current may flow from a semiconductor element with a higher reference potential to a semiconductor element with a lower reference potential via the reference wiring. However, in the present embodiment, because the parasitic inductance in the reference wiring is made smaller, it is possible to make an induced electromotive force ΔV that occurs at the reference wiring when a current flows smaller. As described above, while V G+ ΔV is applied to a control electrode of a semiconductor element with a lower reference potential and V G - ΔV is applied to a semiconductor element with a higher reference potential. Because it is possible to make ΔV smaller in the present embodiment, it is possible to suppress variations in voltages applied to the control electrodes of the respective semiconductor elements. Consequently, it is possible to suppress defects such as deterioration of semiconductor elements as a result of an excessively high voltage being applied to a control electrode of the semiconductor element with a lower reference potential, and failure of semiconductor elements to be properly turned on as a result of only a low voltage being applied to a control electrode of the semiconductor element with a higher reference potential.

[0015] As described above, according to the present embodiment, it is possible to provide a power conversion device that can cause a plurality of semiconductor elements to perform switching at the same time and can reduce variation in voltages applied to control electrodes of individual semiconductor elements. [Short description of the drawing]

[0016] The above and other objects, features, and advantages of the present disclosure will become more apparent from the following detailed description with reference to the accompanying drawings, in which: Fig. 1 is a circuit diagram of a part of a power conversion device when upper arm semiconductor elements are turned on in a first embodiment, Fig. 2 is a circuit diagram of a part of a power conversion device when lower arm semiconductor elements are turned on in the first embodiment, Fig. 3 is a plan view of part of a control circuit unit in the first embodiment, Fig. 4 is a summary circuit diagram of the power conversion device in the first embodiment, Fig. 5 is a more detailed circuit diagram of the upper arm semiconductor elements and the control circuit unit in the first embodiment, Fig. 6 is a cross-sectional diagram of the power conversion device in the first embodiment, which is a cross-sectional diagram along VI-VI in Fig. 7 is, Fig. 7 a cross-sectional diagram along VII-VII in Fig. 6, Fig. 8 is a plan view of part of a control circuit unit in a second embodiment, Fig. 9 is a plan view of part of a control circuit unit in a third embodiment, Fig. 10 is a plan view of part of a control circuit unit in a fourth embodiment, Fig. 11 is a plan view of part of a control circuit unit in a fifth embodiment, Fig. 12 is a circuit diagram of a part of a power conversion device when upper arm semiconductor elements are turned on in a sixth embodiment, Fig. 13 is a circuit diagram of a part of the power conversion device when underarm semiconductor elements are turned on in the sixth embodiment, Fig. 14 is a schematic cross-sectional diagram of a power conversion device in a seventh embodiment, Fig. 15 is a plan view of part of a control circuit unit in the seventh embodiment, Fig. 16 is a conceptual diagram of a semiconductor module in the seventh embodiment, Fig. 17 is a schematic cross-sectional diagram of a power conversion device in an eighth embodiment, Fig. 18 is a plan view of part of a control circuit unit in the eighth embodiment, Fig. 19 is a schematic cross-sectional diagram of a power conversion device in a ninth embodiment, Fig. 20 is a plan view of a part of a control circuit unit in the ninth embodiment, Fig. 21 is a conceptual diagram of a semiconductor module in the ninth embodiment, Fig. 22 is a plan view of a semiconductor element in a tenth embodiment, Fig. 23 is a cross-sectional diagram of an upper arm semiconductor module and a control circuit unit in the tenth embodiment; Fig. 24 is a cross-sectional diagram of a lower arm semiconductor module and a control circuit unit in the tenth embodiment; Fig. 25 is a schematic cross-sectional diagram of a power conversion device in an eleventh embodiment, Fig. 26 is a schematic cross-sectional diagram of a power conversion device in a twelfth embodiment, Fig. 27 is a conceptual diagram of a semiconductor module in the twelfth embodiment, Fig. 28 is a schematic cross-sectional diagram of a power conversion device in a thirteenth embodiment, Fig. 29 is a schematic cross-sectional diagram of a power conversion device in a fourteenth embodiment, Fig. 30 is a schematic cross-sectional diagram of a power conversion device in a fifteenth embodiment, Fig. 31 is a schematic cross-sectional diagram of a power conversion device in a sixteenth embodiment, Fig. 32 is a schematic cross-sectional diagram of a power conversion device in a seventeenth embodiment, Fig. 33 is a schematic cross-sectional diagram of a power conversion device in an eighteenth embodiment, Fig. 34 is a schematic cross-sectional diagram of a power conversion device in a nineteenth embodiment, Fig. 35 is a schematic cross-sectional diagram of a power conversion device in a twentieth embodiment, Fig. 36 is a schematic cross-sectional diagram of a power conversion device in a twenty-first embodiment, Fig. 37 is a schematic cross-sectional diagram of a power conversion device in a twenty-second embodiment, Fig. 38 is a schematic cross-sectional diagram of a power conversion device in a twenty-third embodiment, Fig. 39 is a circuit diagram of a part of a power conversion device when upper arm semiconductor elements are turned on in a comparative example, and Fig. 40 is a circuit diagram of a part of a power conversion device when underarm semiconductor elements are turned on in the comparative example. [Description of the embodiments]

[0017] The power conversion device described above may be implemented as an in-vehicle power conversion device to be mounted on a vehicle such as an electric vehicle and a hybrid vehicle. (First embodiment)

[0018] A present embodiment relating to the above-described power conversion device is described using Fig. 1 to Fig. 7. As described in Fig. 4, a power conversion device 1 in the present embodiment includes a plurality of semiconductor elements 2 and a control circuit unit 3. The semiconductor elements 2 include upper arm semiconductor elements 2 H , which are arranged on one upper arm side, and forearm semiconductor elements 2 L, which are arranged on one side of the forearm. A plurality of upper arm semiconductor elements 2 H , which are connected in parallel to each other, are caused by the control circuit unit 3 to perform switching at the same time. Furthermore, a plurality of underarm semiconductor elements 2 L which are connected in parallel to each other, are caused by the control circuit unit 3 to perform switching at the same time.

[0019] As it is in Fig. 1, the control unit 3 comprises a drive circuit 30 connected to the plurality of semiconductor elements 2 that perform switching at the same time, a control wiring 4 G and a reference wiring 4 KE . The control wiring 4 G electrically connects control electrodes 21 G(i.e. gates) of the semiconductor elements 2 with the control circuit 30. Furthermore, the reference wiring 4 connects KE electrical reference electrodes 21 KE (i.e. emitter) of the semiconductor elements 2 with the control circuit 30.

[0020] A parasitic inductance L KE in the reference wiring 4 KE is made smaller than a parasitic inductance L G in the control wiring 4 G .

[0021] The power conversion device 1 in the present embodiment is an in-vehicle power conversion device to be mounted on a vehicle such as an electric vehicle and a hybrid vehicle. As shown in Fig. 4, in the present embodiment, two upper arm semiconductor elements 2 H and two forearm semiconductor elements 2 Lconnected in parallel. The semiconductor elements 2 in the present embodiment are IGBTs. The semiconductor elements 2 are arranged in a semiconductor module 20 (see Fig. 7) are installed. The upper arm semiconductor elements 2 H and the forearm semiconductor elements 2 L are installed in a semiconductor module 20.

[0022] The semiconductor module 20 comprises a semiconductor module 20 U for a U-phase, a semiconductor module 20 V for a V-phase and a semiconductor module 20 W for a W phase. By causing the semiconductor elements 2 in the semiconductor module 20 to perform switching by the control circuit 3, a DC power supplied from a DC power supply 8 is converted into an AC power. Then, a three-phase AC motor 81 is driven using this AC power to cause the above-described vehicle to travel.

[0023] As it is in Fig. 7, the semiconductor module 20 comprises a body element 200 in which the semiconductor elements 2 are installed, power terminals 24 protruding from the body element 200, and control terminals 25. The power terminals 24 comprise a positive terminal 24 P and a negative terminal 24 N to which DC voltages are applied and an output terminal 24 O which outputs AC power. The above-described control terminals 25 are connected to the control circuit unit 3.

[0024] As it is in Fig. 5, the semiconductor element 2 comprises a detection electrode 21 SE in addition to the control electrode 21 described above G and reference electrode 21 KE . Furthermore, a temperature-sensitive diode 29 is installed in the semiconductor module 20. A cathode electrode 21 Kthe temperature-sensitive diode 29 is connected to the reference electrode 21 KE connected. An anode electrode 21 A and the cathode electrode 21 K the temperature-sensitive diode 29 and electrodes 21 G , 21 KE and 21 SE of the semiconductor element 2 are electrically connected to the control circuit unit 3 via the control terminals 25. The anode electrode 21 A and the cathode electrode 21 K are connected to a temperature detection circuit 38, and the detection electrode 21 SE is connected to a current detection circuit 39. The temperature detection circuit 38 measures a temperature of the semiconductor element 2 by measuring a forward voltage of the temperature-sensitive diode 29. Furthermore, the current detection circuit 39 measures a current flowing through the entire semiconductor element 2 by measuring a current flowing through the detection electrode 21. SE flows, is measured.

[0025] As it is in Fig. 3, a plurality of connecting elements 5 (through holes in the present embodiment) for electrically connecting the control circuit unit 3 to the semiconductor elements 2 are formed in the control circuit unit 3. The control terminals 25 are inserted into the connecting elements 5 and soldered there. The control circuit unit 3 comprises a reference connecting element 5 KE for connecting to the reference electrode 21 KE , a control connection element 5 G for connecting to the control electrode 21 G and a detection connector 5S E for connecting to the detection electrode 21 SE as the connecting elements 5. Furthermore, the control circuit unit 3 comprises an anode connecting element 5 A for connecting to the anode electrode 21 Aand a cathode connecting element 5 K for connecting to the cathode electrode 21 K . The control circuit 30 is connected to the reference connection element 5 KE using reference wiring 4 KE The control circuit 30 is connected to the control connection element 5 G using control wiring 4 G In the present embodiment, a wiring length of the reference wiring 4 KE made shorter than a wiring length of the control wiring 4 G This reduces the parasitic inductance L KE in the reference wiring 4 KE made smaller than the parasitic inductance L G in the control wiring 4 G .

[0026] One reason why a difference in voltages applied to the control electrodes 21 Gof the respective semiconductor elements 2 in the case where the plurality of semiconductor elements 2 are caused to perform switching at the same time will be described below. As shown in Fig. 1, reference electrodes 21 KE the two upper arm semiconductor elements 2 H electrically with an AC busbar 7 A An inductance is connected in the AC busbar 7 A parasitic. Furthermore, freewheeling diodes 28 are connected antiparallel to the individual semiconductor elements 2.

[0027] Here, a case is considered in which a state differs from a state in which both the upper arm semiconductor elements 2 H as well as the forearm semiconductor elements 2 L are switched off, to a state in which the upper arm semiconductor elements 2 H are switched on. Immediately before the upper arm semiconductor elements 2 Hare switched on, a reverse current (not shown) flows through the freewheeling diodes 28 of the lower arm semiconductor elements 2L in a forward direction due to the inductance of the three-phase AC motor 81 (see Fig. 4). If the upper arm semiconductor elements 2 H are switched on, a current I flows, with the return current gradually decreasing. Then the freewheeling diodes 28 recover and a recovery current I R flows.

[0028] This can occur due to a difference in recovery properties between two freewheeling diodes 28 a and 28 b occur that while the freewheeling diode 28 a recovered quickly, the other freewheeling diode 28 b does not recover so quickly. In this situation, currents I flow from both upper arm semiconductor elements 2 H through which a freewheeling diode 28 a. Consequently, a current I flowing through the upper arm semiconductor element 2 Hb flows through the AC busbar 7 A and flows through a freewheeling diode 2 A As described above, because an inductance in the AC busbar 7 A is parasitic, an induced electromotive force V KE due to this inductance. Consequently, a potential of the reference electrode 21 KEb an upper arm semiconductor element 2 Hb around V KE higher than a potential of the reference electrode 21 KEa of the upper arm semiconductor element 2 Ha .

[0029] Consequently, a current I flows from the upper arm semiconductor element 2 Hb with a higher reference potential to the upper arm semiconductor element 2 Ha with a lower reference potential through the reference wiring 4 KE . Consequently, an induced electromotive force ΔV (= L KEdi / dt) by the parasitic inductance L KE in the reference wiring 4 KE Consequently, a potential E H , which becomes a reference for the drive circuit 30, by ΔV higher with respect to the reference electrode 21 KEa of the semiconductor element 2 Ha with a lower reference potential. The control circuit 30 applies a control voltage V G to the control electrode 21 G based on the potential G H Consequently, a sum V G + ΔV of the control voltage V G and ΔV to the control electrode 21 G of the semiconductor element 2 Ha with a lower reference potential.

[0030] Furthermore, when an induced electromotive force ΔV occurs, a potential E H , which becomes a reference for the drive circuit 30 to determine ΔV with respect to the reference electrode 21 KEb of the semiconductor element 2Hb with a higher reference potential. Consequently, only V G - ΔV to the control electrode 21 G of the semiconductor element 2 Hb with a higher reference potential. In this way, in the case where the plurality of semiconductor elements 2 are caused to perform switching at the same time, it is likely that voltages applied to the control electrode 21 G applied. However, in the present embodiment, it is as described above because the parasitic inductance L KE in the reference wiring 4 KE smaller, it is possible to make the induced electromotive force ΔV smaller. Consequently, it is possible to achieve a large variation in voltages applied to the control electrodes 21 G to prevent them from being created.

[0031] Meanwhile, even if the forearm semiconductor elements 2 Lswitched on, it can occur in a similar way that a difference in voltages occurs which is applied to the control electrodes 21 G As it is in Fig. 2, the negative terminals 24 N the semiconductor modules 20 with the forearm semiconductor elements 2 L connected. Inductances L N are in the negative terminals 24 N parasitic. There is a case where the inductances L N the two negative terminals 24 N are different from each other. For example, it may occur that a parasitic inductance L Nb in a negative connection 24 Nb higher than a parasitic inductance L Na in the other negative terminal 24 Na In this situation, when the two forearm semiconductor elements 2 La and 2 Lb both are switched on, a current I through the negative terminals 24 Naand 24 Nb , whereby a difference in the induced electromotive force, which at the negative terminals 24 Na and 24 Nb occurs due to a difference in inductances. Consequently, a potential of the reference electrode 21 KEb a forearm semiconductor element 2 Lb higher than a potential of the reference electrode 21 KEa of the other forearm semiconductor element 2 La .

[0032] Consequently, a current I flows from a forearm semiconductor element 2 Lb to the other forearm semiconductor element 2 La through the reference wiring 4 KE . Consequently, in a similar manner to the case where the upper arm semiconductor elements 2 H be switched on (see Fig. 1), a difference in voltages that is applied to the control electrodes 21 G This means that while V G + ΔV to the control electrode 21 Ga forearm semiconductor element 2 La is created, only V G - ΔV to the control electrode 21 G of the other forearm semiconductor element 2 Lb However, in the present embodiment, as described above, the parasitic inductance L KE in the reference wiring 4 KE made smaller. Consequently, it is possible to accommodate large variations in voltages applied to the control electrodes 21 G to prevent them from being created.

[0033] A structure of the power conversion device 1 will be described next. As shown in Fig. 6 and Fig. As illustrated in Fig. 7, in the present embodiment, the semiconductor modules 20 and cooling tubes 11 are alternately stacked to form a stacked body 10. A pressing member 17 (for example, a leaf spring) is arranged at a position adjacent to the stacked body 10 in a stacking direction (hereinafter also referred to as an X direction) of the stacked body 10. Pressure is applied to the stacked body 10 toward a wall member 161 of a case 16 by the pressing member 17. Thereby, the stacked body 10 is fixed within the case 16 while ensuring contact pressure between the semiconductor modules 20 and the cooling tubes 11.

[0034] The two cooling tubes 11, which are adjacent in the X-direction, are connected to each other by a connecting tube 15. Furthermore, an inlet tube 13 for introducing a coolant 12 and an outlet tube 14 for discharging the coolant 12 are connected to an end portion cooling tube 11. a which is arranged at one end in the X direction below a plurality of cooling tubes 11. When the coolant 12 is introduced from the inlet tube 13, the coolant 12 passes through the connecting tube 15 and flows through all the cooling tubes 11. This cools the semiconductor modules 20.

[0035] Furthermore, as described above, the semiconductor module 20 comprises a positive terminal 24 P , a negative terminal 24 N , an output terminal 24 O and control terminals 25. The positive terminal 24 P is connected to a capacitor 72 by means of a positive current rail 7 PFurthermore, the negative terminal 24 N with the capacitor 72 by means of a negative current rail 7 L tied together.

[0036] As it is in Fig. 3, the control terminals 25 are connected to the connectors 5 of the control circuit unit 3. A connector group 50 is configured with a plurality of connectors 5. The drive circuits 30 are formed at positions adjacent to the connector groups 50 in a direction in which the plurality of connectors 5 are arranged (hereinafter also referred to as a Y direction). Further, as described above, the control circuit unit 3 includes the reference connectors 5. KE and the control connecting elements 5 G than the connecting elements 5. The control circuits 30 are connected to the reference connecting elements 5 KEusing reference wiring 4 KE The control circuits 30 are connected to the control connection elements 5 G using control wiring 4 G In the Y-direction, the reference connecting elements 5 KE formed at positions closer to the control circuits 30 with which the reference connection elements 5 KE and the control connecting elements 5 G are connected than the control connection elements 5 G More specifically, among the plurality of connection elements 5, connection elements 5 formed at positions closest to the drive circuits 30 in the Y direction are designated as the reference connection elements 5 KE set.

[0037] As it is in Fig. 3, the connecting element group 50 comprises an upper arm connecting element group 50 Hfor connecting to the upper arm semiconductor elements 2 H and a forearm connecting element group 50 L for connecting to the forearm semiconductor elements 2 L . The upper arm connecting element group 50 H and the forearm connecting element group 50 L are adjacent to each other in the Y direction. Furthermore, the control circuit 30 includes an upper arm control circuit 30 H , which are connected to the upper arm semiconductor elements 2 H and a forearm control circuit 30 L , which are connected to the forearm semiconductor elements 2 L The upper arm control circuit 30 H and the forearm control circuit 30 L are designed at positions so that the upper arm connecting element group 50 H and the forearm connecting element group 50 L between the upper arm control circuit 30 H and the forearm control circuit 30L are set in the Y direction.

[0038] Operational effects of the present embodiment will be described. As shown in Fig. 1 and Fig. 2, in the present embodiment, the parasitic inductance L KE in the reference wiring 4 KE smaller than the parasitic inductance L G in the control wiring 4 G been made.

[0039] It is therefore possible to reduce variation in voltages applied to the control electrodes 21 Gof the individual semiconductor elements 2. That is, as described above, when the plurality of semiconductor elements 2 connected in parallel are caused to perform switching at the same time, reference potentials of the individual semiconductor elements 2 are likely to vary. As a result, a current i may flow from the semiconductor element 2 with a higher reference potential to the semiconductor element 2 with a lower reference potential via the reference wiring 4. KE flows. However, in the present embodiment, because the parasitic inductance L KE in the reference wiring 4 KE smaller, it is possible to reduce the induced electromotive force ΔV, which is present in the reference wiring 4 KE occurs, to make it smaller. While V G + ΔV to the control electrode 21 Gof the semiconductor element 2 with a lower reference potential and V G - - ΔV is applied to the semiconductor element 2 with a higher reference potential, since ΔV can be made smaller in the present embodiment, it is possible to suppress a variation in voltages applied to the control electrodes 21 G of the respective semiconductor elements 2. It is therefore possible to suppress defects such as deterioration of semiconductor elements 2 as a result of excessively high voltage applied to the control electrode 21 G of the semiconductor element 2 with a lower reference potential is applied, and a malfunction of semiconductor elements 2 to be switched on correctly, as a result of only a low voltage being applied to the control electrode 21 G of the semiconductor element 2 with a higher reference potential.

[0040] In the conventional power conversion device 1 as shown in Fig. 39, the parasitic inductance L KE in the reference wiring 4 KE greater than the parasitic inductance L E in the control wiring 4 G . Consequently, when a current i flows through the reference wiring 4 KE flows, a high induced electromotive force ΔV occurs. Consequently, when a plurality of upper arm semiconductor elements 2 H at the same time, problems occur that an upper arm semiconductor element 2 Ha , the part of the upper arm semiconductor elements 2 H is likely to be a result of a high voltage V G + ΔV, which is applied to the upper arm semiconductor element 2 Ha is applied, and that another upper arm semiconductor element 2 Hb as a result of only a low voltage V G- ΔV to the upper arm semiconductor element 2 Hb is not switched on correctly. Furthermore, as described in Fig. 40, even in the case where a plurality of underarm semiconductor elements 2 La and 2 Lb are switched on at the same time, similar problems arise. In contrast, in the present embodiment, because the inductance L KE the reference wiring 4 KE smaller, it is possible to make ΔV smaller. It is therefore possible to reduce a variation in voltages applied to the control electrode 21 G of the individual semiconductor elements 2 are applied, smaller.

[0041] Furthermore, in the present embodiment, as shown in Fig. 3, a wiring length of the reference wiring 4 KE made smaller than a wiring length of the control wiring 4 G .

[0042] It is therefore possible to determine the parasitic inductance L KE in the reference wiring 4 KE to be surely smaller than the parasitic inductance L G in the control wiring 4 G .

[0043] Furthermore, in the present embodiment, a plurality of connection elements 5 are formed in the control circuit unit 3. The drive circuits 30 are formed at positions adjacent to the connection element groups 50 in the Y direction. The reference connection elements 5 KE are formed at positions that are closer to the control circuits 30 than the control connection elements 5 G in the Y direction.

[0044] Consequently, it is possible to use a length of reference wiring 4 KE , which connects the control circuits 30 to the reference connection elements 5 KEconnecting, so that it is possible to reduce the parasitic inductance L KE the reference wiring 4 KE to make smaller.

[0045] Furthermore, as stated in Fig. 3, in the present embodiment, among the plurality of connection elements 5, connection elements 5 formed at positions closest to the drive circuits 30 in the Y direction are used as the reference connection elements 5 KE set.

[0046] It is therefore possible to use a length of reference wiring 4 KE further shorten so that it is possible to reduce the inductance of the reference wiring 4 KE to reduce in an effective way.

[0047] Furthermore, as stated in Fig. 1 and Fig. 2, in the present embodiment, the upper arm semiconductor elements 2 H and the forearm semiconductor elements 2 Linstalled in the same semiconductor module 20.

[0048] It is therefore possible to exhibit effects of the present invention particularly prominently. That is, as described in Fig. 12, it is also possible to use the upper arm semiconductor elements 2 H and the forearm semiconductor elements 2 L in different semiconductor modules 20, in which case it is less likely that voltages applied to the control electrodes 21 G the upper arm semiconductor elements 2 H applied vary considerably. That is, in this case, the two upper arm semiconductor elements 2 H not individually with the forearm semiconductor elements 2 L connected to the forearm semiconductor elements 2 L only via a common AC busbar 7 A are electrically connected. Consequently, in the case where only one freewheeling diode 28A has recovered and the other freewheeling diode 28 B has not recovered, currents I, each of which flows through the two upper arm semiconductor elements 2 H flow, both through the AC busbar 7 A and flow through a freewheeling diode 28 A . Consequently, because the two currents I through the AC busbar 7 A pass through, levels of parasitic inductances in current paths become essentially equal, whereby levels of induced electromotive force arising due to the inductances become essentially equal. Consequently, because the two currents I through the AC busbar 7 A pass through, levels of parasitic inductances in current paths become substantially equal, with levels of induced electromotive force arising due to the inductances becoming substantially equal. Consequently, potentials of the reference electrodes 21 KEthe two upper arm semiconductor elements 2 Ha and 2 Hb essentially equal to each other. Consequently, no large current I flows through the reference wiring 4 KE , where there is a small induced electromotive force ΔV at the reference wiring 4 KE Consequently, voltages applied to the control electrodes 21 G the two upper arm semiconductor elements 2 Ha and 2 Hb are essentially equal to each other.

[0049] In contrast, as stated in Fig. 1, as in the present embodiment in the case where the upper arm semiconductor elements 2 H and the forearm semiconductor elements 2 L are installed in the same semiconductor module 20, the upper arm semiconductor elements 2 H individually with the forearm semiconductor elements 2 Lwithin the semiconductor module 20. Consequently, in the case where only one freewheeling diode 28 a has recovered, a current I of an upper arm semiconductor element 2 Ha not through the AC busbar 7 A through, whereby only a current I of the other upper arm semiconductor element 2 Hb through the AC busbar 7 A As a result, a large difference in the parasitic inductances occurs in the current paths, which becomes a reason to set reference potentials of the two upper arm semiconductor elements 2 Ha and 2 Hb to a large extent different from each other. Consequently, a current i flows through the reference wiring 4 KE , where it is likely that an induced electromotive force ΔV at the reference wiring 4 KE occurs. Consequently, as in the present embodiment, in the case where the upper arm semiconductor elements 2 Hand the forearm semiconductor elements 2 L are installed in the same semiconductor module 20 in which the parasitic inductance L KE in the reference wiring 4 KE made smaller, possible to have an effect of suppressing a variation in voltages applied to the control electrodes 21 G the upper arm semiconductor elements 2 H is designed to show particularly strikingly.

[0050] As described above, according to the present embodiment, it is possible to provide a power conversion device that can cause a plurality of semiconductor elements to perform switching at the same time and can reduce variation in voltages applied to control electrodes of the individual semiconductor elements.

[0051] It should be noted that, while in the present embodiment the inductance L KE the reference wiring 4KE smaller than the inductance L G the control wiring 4 G on both the upper arm and the forearm side, the present invention is not limited to this. That is, it is also possible to make the inductance L KE the reference wiring 4 KE smaller than the inductance L G the control wiring 4 G only on one side of the upper arm and one side of the forearm.

[0052] In the embodiments described below, among reference numerals used in the drawings, reference numerals that are the same as those used in the first embodiment indicate constituent elements or the like that are similar to those in the first embodiment unless otherwise specified. (Second embodiment)

[0053] The present embodiment is an example in which a configuration of the control circuit unit 3 is changed. As shown in Fig. 8, in the present embodiment, a width of the reference wiring 4 KE made thicker than a width of the control wiring 4 G This reduces the parasitic inductance L KE in the reference wiring 4 KE made smaller than the parasitic inductance L G in the control wiring 4 G .

[0054] This also makes it possible in the case where the control connection elements 5 G are formed at positions that are closer to the drive circuits 30 than the reference connection elements 5 KE are possible, the inductance L KE the reference wiring 4 KE smaller than the inductance L G the control wiring 4 G close.

[0055] The second embodiment has a configuration and operating effects similar to those in the first embodiment for other points.

[0056] It should be noted that, while in the present embodiment the control wiring 4 G is made shorter than the reference wiring 4 KE , the present invention is not limited thereto. That is, as in the first embodiment (see Fig. 3) it is possible to use the reference wiring 4 KE shorter than the control wiring 4 G and also the width of the reference wiring 4 KE thicker than the width of the control wiring 4 G This is because a wiring length of the reference wiring 4 KE can be made shorter and the width of the reference wiring 4 KE can be made thicker, possible to increase the inductance LKE the reference wiring 4 KE to effectively make it smaller. (Third embodiment)

[0057] The present embodiment is an example in which the configuration of the control circuit unit 3 is changed. As shown in Fig. 9, in the present embodiment, two control circuits 30 H and 30 L between the upper arm connecting element group 50 H and the forearm connecting element group 50 L The individual control circuits 30 H and 30 L are formed at positions adjacent to the connecting element groups 50 in the Y direction.

[0058] The third embodiment has a configuration and operating effects similar to those in the first embodiment for other points. (Fourth embodiment)

[0059] The present embodiment is an example in which the configuration of the control circuit unit 3 is changed. As shown in Fig. 10, in the present embodiment, the individual control circuits 30 H and 30 L arranged on one side of the connecting element groups 50 in the Y direction. That is, the upper arm control circuit 30 H is on one side of the upper arm connecting element group 50 H arranged in the Y-direction, and the forearm control circuit 30 L is on one side of the forearm connecting element group 50 L arranged in the Y direction.

[0060] The fourth embodiment has a configuration and operating effects similar to those in the first embodiment for other points. (Fifth embodiment)

[0061] The present embodiment is an example in which the configuration of the control circuit unit 3 is changed. As shown in Fig. 11, in the present embodiment, the upper arm connecting element groups 50 H and the forearm connecting element groups 50 L arranged alternately in the X-direction. The control circuits 30 H and 30 L are on one side of the connecting element groups 50 H and 50 L arranged in the Y-direction. Furthermore, in the present embodiment, in a similar manner to the first embodiment, the reference wiring 4 KE shorter than the control wiring 4 G This reduces the parasitic inductance L KE in the reference wiring 4 KE made smaller than the parasitic inductance L G in the control wiring 4 G .

[0062] The fifth embodiment has a configuration and operating effects similar to those in the first embodiment for other points. (Sixth embodiment)

[0063] The present embodiment is an example in which a configuration of the semiconductor module 20 is changed. As shown in Fig. 12 and Fig. 13, in the present embodiment, the upper arm semiconductor elements 2 H and the forearm semiconductor elements 2 L installed in different semiconductor modules 20. In this case, as described above, while it is less likely that a difference in potentials of the reference electrodes 21 KE a variety of upper arm semiconductor elements 2 H occurs (see Fig. 12), a case in which a difference in potentials of the reference electrodes 21 KEthe forearm semiconductor elements 2 L This means that negative terminals 24 N are connected to the reference electrodes 21 KE the forearm semiconductor elements 2 L connected, whereby it may occur that the inductances L N the negative terminals 24 N For example, it may happen that the inductance L Nb a forearm semiconductor element 2 Lb greater than the inductance L Na of the other forearm semiconductor element 2 La In this situation, if the two forearm semiconductor elements 2 La and 2 Lb switched on at the same time, a potential of the reference electrode 21 KE a forearm semiconductor element 2 Lb by a difference between the inductances L Na and L Nb higher than a potential of the other forearm semiconductor element 2 La . Consequently, a current i flows through the reference wiring 4KE and flows from a forearm semiconductor element 2 Lb to the other forearm semiconductor element 2 La , where an induced electromotive force ΔV at the reference wiring 4 KE occurs. However, in the present embodiment, because the parasitic inductance L KE in the reference wiring 4 KE smaller, it is possible to make ΔV smaller. Consequently, it is possible to prevent voltages applied to the respective semiconductor elements 2 La and 2 Lb are created, vary.

[0064] The sixth embodiment has a configuration and operating effects similar to those in the first embodiment for other points. (Seventh embodiment)

[0065] The present embodiment is an example in which a position at which the control circuit unit 30 is arranged or the like is changed. As shown in Fig. 14, in the present embodiment, the upper arm semiconductor elements 2 H and the forearm semiconductor elements 2 L in different semiconductor modules 20 (20 H and 20 L ) is provided. Furthermore, as stated in Fig. 14 and Fig. 16, a plurality of upper arm semiconductor elements 2 H (2 Ha and 2 Hb ), which are connected in parallel and which perform switching at the same time, into the upper arm semiconductor module 20 H according to the present embodiment. In a similar manner, a plurality of underarm semiconductor elements 2 L (2 La and 2 Lb), which are connected in parallel and which perform switching at the same time, into the forearm semiconductor module 20 L installed.

[0066] As it is in Fig. 14 and Fig. 15, the upper arm control circuit 30 H and the forearm control circuit 30 L between the upper arm connecting element group 50 H and the forearm connecting element group 50 L arranged in the Y direction.

[0067] As it is in Fig. 15, in the present embodiment, in a similar manner to the first embodiment, the reference connecting elements 5 KE with the control circuits 30 by means of the reference wiring 4 KE Furthermore, the control connection elements 5 G with the control circuits 30 by means of the control wiring 4 GFurthermore, the reference connecting elements 5 KE formed at positions closer to the drive circuits 30 connected to the reference connection elements 5 KE and the control connection elements 5 G are connected than the control connection elements 5 G in the Y direction. More specifically, among a plurality of connection elements 5, connection elements 5 formed at positions closest to the drive circuits 30 in the Y direction are designated as the reference connection elements 5. KE set.

[0068] As it is in Fig. 15, the upper arm control circuit 30 H and the forearm control circuit 30 L between the upper arm connecting element group 50 H and the forearm connecting element group 50 Lin the Y-direction. Furthermore, a power supply circuit 31 connected to the upper arm control circuit 30 H and the forearm control circuit 30 L is connected between the upper arm control circuit 30 H and the forearm control circuit 30 L The power supply circuit 31 is controlled by the two control circuits 30 H and 30 L Furthermore, the drive circuits 30 in the present embodiment are configured with specific ICs. Insulating parts S ITo ensure insulation, insulation members S are formed between the drive circuits 30 and the connector groups 50, as well as between the drive circuits 30 and the power supply circuit 31. Low-voltage wiring 89 is provided at an edge portion 35 of the control circuit 3. Insulating members S are also formed between the low-voltage wiring 89 and the connector group 50.

[0069] Operational effects of the present embodiment will be described. As shown in Fig. 15, in the present embodiment, in a similar manner to the first embodiment, the reference connecting elements 5 KE formed at positions that are closer to the control circuit 30 than the control connection elements 5 G It is therefore possible to use the reference wiring 4 KE shorter than the control wiring 4G so that it is possible to determine the parasitic inductance L KE in the reference wiring 4 KE to reduce.

[0070] Furthermore, in the present embodiment, two control circuits 30 H and 30 L between the upper arm connecting element group 50 H and the forearm connecting element group 50 L in the Y-direction. It is therefore possible to use the upper arm control circuit 30 H closer to the forearm control circuit 30 L so that it is possible to set the power supply circuit 31 between the two control circuits 30 H and 30 L Consequently, it is possible to reduce the number of power supply circuits 31, so that it is possible to reduce the manufacturing cost of the control circuit unit 3. Furthermore, it is possible to reduce the area of ​​the control circuit unit 3.

[0071] Furthermore, the individual connecting elements 5 are provided with electrodes 21 (21 KE , 21 SE , 21 G , 21 A and 21 K : see Fig. 5), which are different from each other, of the semiconductor element 2. As shown in Fig. 15, the connection sequence (5 K , 5 A , 5 G , 5 SE and 5 KE ) of the individual connecting elements 5, which form the upper arm connecting element group 50 H form, to the electrode 21 described above and the connection sequence (5 KE , 5 SE , 5 G , 5 A and 5 K ) of the individual connecting elements 5, which form the forearm connecting element group 50 L form, to the above-described electrode 21 with respect to each other from one side (for example, a left side in Fig. 15) towards the other side (for example, a right side in Fig. 15) in the Y direction is reversed.

[0072] It is therefore possible to use the upper arm connecting element group 50 H and the forearm connecting element group 50 L to make it asymmetrical, while the reference connecting element 5 KE closer to the control circuit 30 for each of the upper arm side and the lower arm side. Therefore, it is possible to simplify the configuration of the control circuit unit 3 and simplify the design.

[0073] The seventh embodiment has a configuration and operating effects similar to those in the first embodiment for other points. (Eighth embodiment)

[0074] The present embodiment is an example in which a position in which the drive circuits 30 are arranged is changed. As shown in Fig. 17 and Fig. 18, in the present embodiment, in a similar manner to the seventh embodiment, the reference connecting elements 5 KE formed at positions closer to the drive circuits 30 connected to the reference connection elements 5 KE and the control connection elements 5 G are connected than the control connection element 5 G This will cause the reference wiring 4 KE shorter than the control wiring 4 G made, where the inductance L KE the reference wiring 4 KE is made smaller.

[0075] Furthermore, as stated in Fig. 18, in the present embodiment, the upper arm control circuit 30 H , the upper arm connecting element group 50 H , the forearm connecting element group 50 L and the forearm control circuit 30 L arranged in this order in the Y direction.

[0076] Insulating parts S I for insulation between the connecting element groups 50 and the control circuits 30 as well as between the upper arm connecting element group 50 H and the forearm connecting element group 50 L formed. Furthermore, in a similar manner to the seventh embodiment, the low-voltage wiring 89 is provided at the edge portion 35 of the control circuit unit 3. The insulating part S I is also between the low-voltage wiring 89 and the control circuit 30 H trained.

[0077] Operational effects of the present embodiment will be described. As shown in Fig. 18, in the present embodiment, the upper arm control circuit 30 H , the upper arm connecting element group 50 H , the forearm connecting element group 50 L and the forearm control circuit 30 L arranged in this order in the Y direction.

[0078] Therefore, it is possible to make the control circuit unit 3 symmetrical between the upper arm side and the lower arm side, making it possible to simplify a circuit configuration of the control circuit 3. Consequently, it is possible to design the control circuit unit 3 in a simple manner.

[0079] Furthermore, when the configuration described above is employed, it is possible to make the control circuit unit 3 even smaller. That is, as shown in Fig. 15, while it is possible to use the control circuits 30 H and 30 L between the two connecting element groups 50 H and 50 L In this case, it will be necessary to provide insulating parts S I between the connector groups 50 and the low-voltage wiring 89. In contrast, when the drive circuits 30 are arranged outside the connector groups 50 in the Y direction, as in the present embodiment, because the drive circuits 30 are placed between the connector groups 50 and the low-voltage wiring 89, it is possible to keep the low-voltage wiring 89 separate from the connector groups 50. Consequently, in a similar manner to the seventh embodiment (see Fig. 15) unnecessary to form specific insulating parts S1' for insulating between the connector groups 50 and the low-voltage wiring 89, so that it becomes possible to make an area of ​​the control circuit unit 3 even smaller.

[0080] The eighth embodiment has a configuration and operating effects similar to those in the first embodiment for other points. (Ninth embodiment)

[0081] The present embodiment is an example in which a structure of the semiconductor module 20 and positions at which the drive circuits 30 are arranged are changed. As shown in Fig. 21, in the present embodiment, a plurality of upper arm semiconductor elements 2 H (2 Ha and 2 Hb ) connected in parallel to each other, and a plurality of underarm semiconductor elements 2 L (2La and 2 Lb ) connected in parallel to each other, are provided within the same semiconductor module 20.

[0082] Furthermore, as stated in Fig. 19 and Fig. 20, in the present embodiment, the upper arm control circuit 30 H , the upper arm connecting element group 50 H , the forearm control circuit 30 L and the forearm connecting element group 50 L arranged in this order in the Y-direction. Furthermore, in the present embodiment, in a similar manner to the first embodiment, the reference connecting elements 5 KE arranged at positions that are closer to the control circuit 30 than the control connection elements 5 G This creates the reference wiring 4 KE shorter than the control wiring 4 G made, where the inductance L KEthe reference wiring 4 KE is made smaller.

[0083] Operational effects of the present embodiment will be described. In the present embodiment, as shown in Fig. 19 and Fig. 21, a plurality of upper arm semiconductor elements 2 H (2 Ha and 2 Hb ) connected in parallel to each other, and a plurality of underarm semiconductor elements 2 L (2 La and 2 Lb ) connected in parallel to each other, are provided in the same semiconductor module 20.

[0084] It is therefore possible to reduce the number of semiconductor modules 20. Consequently, it is possible to reduce the number of parts of the power conversion device 1, so that it is possible to reduce manufacturing costs.

[0085] The ninth embodiment has a configuration and operating effects similar to those in the first embodiment for other points.

[0086] It should be noted that, while in the present embodiment, as shown in Fig. 21, the plurality of upper arm semiconductor elements 2 H (2 Ha and 2 Hb ) and the multitude of underarm semiconductor elements 2 L (2 La and 2 Lb ) connected in parallel to each other are provided in the same semiconductor module 20, the present invention is not limited thereto. That is, it is also possible to provide the individual semiconductor elements 2 (2 H and 2 L ) in different semiconductor modules 20 and to connect these semiconductor modules 20 with the control circuit unit 3, which in Fig. 20. Furthermore, it is also possible to connect an upper arm semiconductor element 2H and a forearm semiconductor element 2 L into each of the semiconductor modules 20 and the semiconductor modules 20 with the control circuit unit 3, which in Fig. 20 is illustrated. (Tenth embodiment)

[0087] The present embodiment is an example in which a structure of the semiconductor element 2 is changed. As shown in Fig. 22, the semiconductor element 2 in the present embodiment comprises a plurality of pads or contact points 26 for electrically connecting to the control circuit unit 3. This plurality of contact points 26 is arranged in the Y direction. Two contact points 26 from the plurality of contact points 26 are reference contact points 26. KE (26 KEa and 26 KEb ) for electrical connection of the reference electrodes 21 KEthe semiconductor elements 2 with the control circuit unit 3. As shown in Fig. 23 and Fig. 24 is illustrated, from the multitude of reference contact points 26 KE (26 KEa and 26 KEb ) the reference contact point 26 KE , which is arranged at a position closer to the drive circuit 30 in the Y direction, is electrically connected to the control circuit unit 3.

[0088] As it is in Fig. 23, the semiconductor module 20 comprises a body element 200 in which the semiconductor element 2 is incorporated. A plurality of control terminals 25 protrude from the body element 200. As described above, two reference contact points 26 KE a first reference contact point 26 KEa and a second reference contact point 26 KEb formed in the semiconductor element 2. As shown in Fig. 23 is illustrated, in the upper arm semiconductor module 20 H the second reference contact point 26 KEb arranged at a position closer to the upper arm control circuit 30 H in the Y-direction than the first reference contact point 26 KEa The second reference contact point 26 KEb is connected to the reference control connection 25 KE using a wire 201. This makes the second reference contact point 26 KEb electrically connected to the control circuit unit 3.

[0089] Furthermore, as stated in Fig. 24, in the forearm semiconductor element 2 L the first reference contact point 26 KEa arranged at a position closer to the forearm control circuit 30 L is than the second reference contact point 26 KEb The first reference contact point 26 KEais connected to the reference control connection 25 KE using the wire 201. This makes the first reference contact point 26 KEa electrically connected to the control circuit unit 3.

[0090] The operational effects of the present embodiment will be described. When the above-described configuration is employed, it is possible to design the upper arm semiconductor element 2 H equal to a structure of the forearm semiconductor element 2 L to make it possible to use the reference control terminal 25 KE at a position closer to the drive circuit 30 for each of the upper arm side and the lower arm side. It is therefore possible to provide each of the lengths of the reference wirings 4 KE on the upper arm side and on the forearm side using the same type of semiconductor elements 2 H and 2 LConsequently, it is possible to reduce the types of semiconductor elements 2 to be used, reduce the manufacturing costs of the power conversion device 1, and reduce the inductance L KE the reference wiring 4 KE to reduce.

[0091] The tenth embodiment has a configuration and operating effects similar to those in the first embodiment for other points. (Eleventh embodiment)

[0092] The present embodiment is an example in which the configuration of the semiconductor module 21 is changed. As shown in Fig. 25, in the present embodiment, in a similar manner to the first embodiment, the reference connecting elements 5 KE arranged at positions closer to the control circuits 30 with which the reference connection elements 5 KEand the control connecting elements 5 G are connected than the control connection elements 5 G in the Y-direction. This determines the length of the reference wiring 4 KE made shorter, whereby the inductance L KE the reference wiring 4 KE is made smaller.

[0093] Furthermore, as stated in Fig. 25, in the present embodiment, the upper arm semiconductor module 20 H and the forearm semiconductor module 20 L arranged in the Y-direction. The forearm semiconductor module 20 L is connected to the control circuit unit 3 in a position in which the upper arm semiconductor module 20 H by 180° around a rotation axis A, which is located between the two semiconductor modules 20 H and 20 Land which is parallel to a protruding direction (hereinafter also referred to as a Z direction) of the control terminals 25, vice versa.

[0094] This makes it possible to use the same type of semiconductor module 20 as the upper arm semiconductor module 20 H and the forearm semiconductor module 20 L It is therefore possible to reduce the number of types of semiconductor modules 20 to be used, so that it is possible to reduce the manufacturing cost of the power conversion device 1.

[0095] Furthermore, when the configuration described above is used, it is possible to connect the reference control terminal 25 KE closer to the drive circuit 30 for each of the upper arm side and the lower arm side using the same type of semiconductor module 20. It is therefore possible to set the reference wiring 4 KE to shorten so that it is possible to reduce the inductance LKE the reference wiring 4 KE to make smaller.

[0096] The eleventh embodiment has a configuration and operating effects similar to those in the first embodiment for other points. (Twelfth embodiment)

[0097] The present embodiment is an example in which a type of the semiconductor module 2 is changed. As shown in Fig. 27, in the present embodiment, two upper arm semiconductor elements 2 H , which are connected in parallel, in an upper arm semiconductor module 20 H Furthermore, two forearm semiconductor elements 2 L , which are connected in parallel, in a forearm semiconductor module 20 L provided. The semiconductor modules 20 H and 20 L include two collector connections 24 C (24 Ca and 24 Cb) and an emitter terminal 24 E . Through two collector connections 24 O , which are provided in this way, parasitic inductances in the collector electrodes 21 C of the semiconductor elements 2. As described in Fig. 26, the emitter terminal 24 E between the two collector terminals 24 C arranged.

[0098] Furthermore, as stated in Fig. 26, in the present embodiment, in a similar manner to the eleventh embodiment, the upper arm semiconductor module 20 H and the forearm semiconductor module 20 L arranged in the Y-direction. The forearm semiconductor module 20 L is connected to the control circuit unit 3 in a position in which the upper arm semiconductor module 20 H by 180° around a rotation axis A, which is located between the two semiconductor modules 20 H and 20 Larranged and which is parallel to the Z direction, is rotated.

[0099] The twelfth embodiment has a configuration and operating effects similar to those in the first embodiment for other points. (Thirteenth embodiment)

[0100] The present embodiment is an example in which positions at which the drive circuits 30 and the power supply circuits 31 are arranged. As shown in Fig. 28, in the present embodiment, the drive circuits 30 and the power supply circuits 31 are arranged on a surface S1 on the semiconductor module 20 side of the control circuit unit 3.

[0101] The thirteenth embodiment has a configuration and operating effects similar to those in the first embodiment for other points. (Fourteenth embodiment)

[0102] The present embodiment is an example in which the configuration of the semiconductor module 20 is changed. As shown in Fig. 29, in the present embodiment, two upper arm semiconductor elements 2 H (2 Ha and 2 Hb ), which are connected in parallel, and two forearm semiconductor elements 2 L (2 La and 2 Lb ), which are connected in parallel, are provided in a semiconductor module 20. An output terminal 24 OThe semiconductor module 20 includes a first portion 241 protruding from the body member 200 toward an opposite side of the control circuit unit 3, a second portion 242 extending in the Y direction from the first portion 241, and a third portion 243 protruding from the second portion 242 in the Z direction on the control circuit unit 3 side. A through-hole 37 is formed at the control circuit unit 3. The third portion 243 is inserted into the through-hole 37. A current sensor 88 for measuring an output current is attached to the third portion 243.

[0103] The fourteenth embodiment has a configuration and operating effects similar to those in the first embodiment for other points. (Fifteenth embodiment)

[0104] The present embodiment is an example in which a structure of the semiconductor module 20 is changed. As shown in Fig. 30, in the present embodiment, in a similar manner to the fourteenth embodiment, two upper arm semiconductor elements 2 H , which are connected in parallel, and two forearm semiconductor elements 2 L , which are connected in parallel, are provided in a semiconductor module 20. An output terminal 24 O protrudes from the body member 200 in the Z direction on the side of the control circuit unit 3. A through hole 37 is formed in the control circuit unit 3, wherein the output terminal 24 O is inserted into the through-hole 37. Furthermore, a current sensor 88 for measuring an output current at the output terminal 24 O attached.

[0105] The fifteenth embodiment has a configuration and operating effects similar to those in the first embodiment for other points. (Sixteenth embodiment)

[0106] The present embodiment is an example in which the configuration of the semiconductor module 20 is changed. As shown in Fig. 31, an output terminal 24 protrudes O In the present embodiment, it protrudes from a side surface 209 of the body member 200 and is formed in a curved shape. A tip of the output terminal 24 O is inserted into the through-hole 37 of the control circuit unit 3. Furthermore, the current sensor 88 is connected to the output terminal 24 O attached.

[0107] The sixteenth embodiment has a configuration and operating effects similar to those in the first embodiment for other points. (Seventeenth embodiment)

[0108] The present embodiment is an example in which the configuration of the semiconductor module 20 is changed. As shown in Fig. 32, in the present embodiment, the upper arm semiconductor element 2 H and the forearm semiconductor element 2 L each provided in different semiconductor modules 20. An emitter terminal 24 E of the upper arm semiconductor module 20 H and a collector connection 24 C of the forearm semiconductor module 20 L are connected to each other by means of the AC busbar 7 A The emitter terminal 24 E of the upper arm semiconductor module is formed in a curved shape and inserted into the through-hole 37 of the control circuit unit 3. A current sensor 88 for measuring an output current is connected to the emitter terminal 24. E attached.

[0109] The seventeenth embodiment has a configuration and operating effects similar to those in the first embodiment for other points. (Eighteenth embodiment)

[0110] The present embodiment is an example in which the configuration of the semiconductor module 20 is changed. As shown in Fig. 33, in the present embodiment, the upper arm semiconductor element 2 H and the forearm semiconductor element 2 L each provided in different semiconductor modules 20. The upper arm semiconductor module 20 H includes two emitter terminals 24 E a first emitter terminal 24 Ea and a second emitter terminal 24 Eb . The first emitter terminal 24 described above Ea is connected to the collector connection 24 C of the forearm semiconductor module 20 L by means of the AC busbar 7A The second emitter terminal 24 Eb protrudes from the body element 200 of the upper arm semiconductor module 20 H toward the side of the control circuit unit 3 in the Z direction. The second emitter terminal 24 Eb is inserted into the through-hole 37 of the control circuit unit 3. The current sensor 88 is connected to the second emitter terminal 24 Eb attached.

[0111] The eighteenth embodiment has a configuration and operating effects similar to those in the first embodiment for other points. (Nineteenth embodiment)

[0112] The present embodiment is an example in which the configuration of the semiconductor module 20 is changed. As shown in Fig. 34, in the present embodiment, the upper arm semiconductor element 2 H and the forearm semiconductor element 2 Leach provided in different semiconductor modules 20. The first emitter terminal 24 Ea of the upper arm semiconductor module 20 H is connected to the collector connection 24 C of the forearm semiconductor module 20 L by means of the AC busbar 7 A The second emitter terminal 24 Eb protrudes from the side surface 209 of the body element 200 of the upper arm semiconductor module 20 H The second emitter terminal 24 Eb is bent and inserted into the through-hole 37 of the control circuit unit 3. The current sensor 88 is connected to the second emitter terminal 24 Eb attached.

[0113] The nineteenth embodiment has a configuration and operating effects similar to those in the first embodiment for other points. (Twentieth embodiment)

[0114] The present embodiment is an example in which the configuration of the semiconductor module 20 is changed. As shown in Fig. 35, in the present embodiment, the upper arm semiconductor element 2 H and the forearm semiconductor element 2 L each provided in different semiconductor modules 20. The collector terminal 24 C of the forearm semiconductor element 2 L protrudes from the body element 200 and is bent. The collector terminal 24 C is inserted into the through-hole 27 of the control circuit 3. The current sensor 88 is attached to the collector terminal 24c.

[0115] The twentieth embodiment has a configuration and operating effects similar to those in the first embodiment for other points. (Twenty-first embodiment)

[0116] The present embodiment is an example in which the configuration of the semiconductor module 20 is changed. As shown in Fig. 36, in the present embodiment, the upper arm semiconductor element 2 H and the forearm semiconductor element 2 L each provided in different semiconductor modules 20. The forearm semiconductor module 2 L includes two collector connections 24 C a first collector connection 24 Ca and a second collector connection 24 Cb . The emitter terminal 24 E of the upper arm semiconductor module 20 H is connected to the first collector connection 24 Ca of the forearm semiconductor module 20 L by means of the AC busbar 7 A The second collector terminal 24 Cb of the forearm semiconductor module 20 Lprotrudes from the body member 200 toward the side of the control circuit unit 3 and is inserted into the through-hole 37. The current sensor 88 is connected to the second collector terminal 24 Cb attached.

[0117] The twenty-first embodiment has a configuration and operational effects similar to those in the first embodiment for other points. (Twenty-second embodiment)

[0118] The present embodiment is an example in which the configuration of the semiconductor module 24 is changed. As shown in Fig. 37, the forearm semiconductor module 20 comprises L in the present embodiment, two collector terminals 24 C a first collector connection 24 Ca and a second collector connection 24 Cb . The first collector connection 24 Ca is connected to the emitter terminal 24 Eof the upper arm semiconductor module 20 H connected. The second collector terminal 14 Cb protrudes from the side surface 209 of the body element 200 and is formed in a curved shape. The second collector terminal 24 Cb is inserted into the through-hole 37 of the control circuit unit 3. The current sensor 88 is connected to the second collector terminal 24 O , attached.

[0119] The twenty-second embodiment has a configuration and operational effects similar to those in the first embodiment for other points. (Twenty-third embodiment)

[0120] The present embodiment is an example in which a configuration of the AC busbar 7 A is changed. As it is in Fig. 38, the AC busbar 7 connects A in the present embodiment, the emitter terminal 24E of the upper arm semiconductor module 20 H with the collector connection 24 C of the forearm semiconductor module 20 L . The AC busbar 7 A is formed in a curved shape and inserted into the through-hole 37 of the control circuit unit 3. The current sensor 88 is mounted on the AC busbar 7 A attached.

[0121] The twenty-third embodiment has a configuration and operating effects similar to those in the first embodiment for other points.

[0122] While the present disclosure has been described with reference to the examples, it should be understood that the present disclosure is not limited to the examples and structures. The present disclosure includes various modified examples and modifications within a range of equivalence. In addition, various combinations, forms, and other combinations, as well as forms including only one element or more or fewer elements, are also within the scope of the present disclosure.

Claims

[1] Power conversion device (1) comprising: a plurality of semiconductor elements (2); and a control circuit unit (3) configured to control switching of the semiconductor elements (2), wherein the semiconductor elements (2) upper arm semiconductor elements (2 H ), which are arranged on one side of the upper arm, and forearm semiconductor elements (2 L ) arranged at a forearm side, by the control circuit unit (3) a plurality of the upper arm semiconductor elements (2 H ) connected in parallel to each other, is caused to perform switching at the same time, and a plurality of the underarm semiconductor elements (2 L ) connected in parallel to each other, are caused to perform a switching operation at the same time, the control circuit unit (3) comprises a drive circuit (30) each electrically connected to the plurality of semiconductor elements (2) which perform switching at the same time, control wirings (4 G ), the control electrodes (21 G ) of the semiconductor elements (2) to the control circuit (30), and reference wiring (4 KE ), the reference electrodes (21 KE ) of the semiconductor elements (2) to the control circuit (30), and a parasitic inductance (L KE ) in the reference wiring (4 KE ) is made smaller than a parasitic inductance (L G ) in the control wiring (4 G ), where a plurality of connecting elements (5) are formed for electrically connecting the control circuit unit (3) to the semiconductor elements (2) in the control circuit unit (3), the drive circuit (30) is formed at positions adjacent to connector groups (50) configured with the plurality of connectors in an arrangement direction of the plurality of connectors (5), the connecting elements (5) reference connecting elements (5 KE ) for electrical connection to the reference electrodes (21 KE ) of the semiconductor elements (2) and control connection elements (5 G ) for electrical connection to the control electrodes (21 G ), wherein the reference connecting elements (5 KE ) with the control circuit (30) by means of the reference wiring (4 KE ), wherein the control connection elements (5 G ) with the control circuit (30) by means of the control wiring (4 G ) are connected, and the reference connecting elements (5 KE) are formed at positions closer to the drive circuit (30) connected to the reference connection elements (5 KE ) and the control connection elements (5 G ) than the control connection elements (5 G ) in the arrangement direction. [2] The power conversion device (1) according to claim 1, wherein a wiring length of the reference wiring (4 KE ) is made shorter than a wiring length of the control wiring (4 G ). [3] Power conversion device (1) according to claim 1 or 2, wherein a width of the reference wiring (4 KE ) is made larger than a width of the control wiring (4 G ). [4] The power conversion device (1) according to any one of claims 1 to 3, wherein the connection elements (5) formed at positions closest to the drive circuit (30) in the arrangement direction among the plurality of connection elements (5) are designated as the reference connection elements (5 KE ) are set. [5] Power conversion device (1) according to one of claims 1 to 4, wherein the connecting element groups (50) an upper arm connecting element group (50 H ) for connecting to the upper arm semiconductor elements (2 H ) and a forearm connecting element group (50 L ) for connecting to the forearm semiconductor elements (2 L ) include the control circuits (30) comprise an upper arm control circuit (30 H ), which are connected to the upper arm semiconductor elements (2 H ) and a forearm control circuit (30 L) connected to the forearm semiconductor elements (2 L ) and the upper arm control circuit (30 H ) and the forearm control circuit (30 L ) between the upper arm connecting element group (50 H ) and the forearm connecting element group (50 L ) are arranged in the arrangement direction. [6] Power conversion device (1) according to one of claims 1 to 4, wherein the connecting element groups (50) an upper arm connecting element group (50 H ) for connecting to the upper arm semiconductor elements (2 H ) and a forearm connecting element group (50 L ) for connecting to the forearm semiconductor elements (2 L ) include the control circuits (30) comprise an upper arm control circuit (30 H ), which are connected to the upper arm semiconductor elements (2 H ) and a forearm control circuit (30 L) connected to the forearm semiconductor elements (2 L ) and the upper arm control circuit (30 H ), the upper arm connecting element group (50 H ), the forearm connecting element group (50 L ), the forearm control circuit (30 L ) are arranged in this order in the arrangement direction. [7] The power conversion device (1) according to claim 5 or 6, wherein the plurality of connecting elements (5) constituting the connecting element group (50) are each electrically connected to mutually different electrodes of the semiconductor elements (2), wherein a connection order of individual connecting elements (5) constituting the upper arm connecting element group (50 H ) with the electrodes and a connection sequence of individual connectors that form the forearm connector group (50 L) with the electrodes reversed with respect to each other from one side towards the other side in the arrangement direction. [8] Power conversion device (1) according to one of claims 1 to 7, wherein the semiconductor elements (2) comprise a plurality of contact points (26) for electrical connection to the control circuit unit (3) arranged in the arrangement direction, at least two contact points from the plurality of contact points (26) reference contact points (26 KE ) for electrically connecting the reference electrodes (21 KE ) with the control circuit unit (3), and from a large number of reference contact points (26 KE ) a reference pad arranged at a position closer to the drive circuit (30) in the arrangement direction is electrically connected to the control circuit unit (3). [9] Power conversion device (1) according to claim 8, wherein from the plurality of contact points (26) the reference contact points (26 KE ) are arranged at both ends in the arrangement direction. [10] Power conversion device (1) according to one of claims 1 to 9, wherein the upper arm semiconductor elements (2 H ) and the forearm semiconductor elements (2 L ) are installed in the same semiconductor module (20). [11] The power conversion device according to any one of claims 1 to 10, wherein the plurality of semiconductor elements (2) connected in parallel to each other and performing switching at the same time are incorporated in the same semiconductor module (20). [12] Power conversion device (1) according to one of claims 1 to 7, wherein the power conversion device (1) comprises two types of semiconductor modules of an upper arm semiconductor module (20 H ), in which the upper arm semiconductor elements (2 H) and a forearm semiconductor module (20 L ), in which the forearm semiconductor elements (2 L ) are installed, each of the semiconductor modules (20) comprises a body element (200) in which the semiconductor elements (2) are installed, and a plurality of control terminals (25) protruding from the body element (200) and connected to the connecting elements (5), the upper arm semiconductor module (20 H ) and the forearm semiconductor module (20 L ) are arranged in the arrangement direction and the forearm semiconductor module (20 L ) with the control circuit unit (3) in a position relative to the upper arm semiconductor module (20 H ) which is mutually rotated by 180° about a rotation axis (A) which is arranged between the two semiconductor modules (20) and which is parallel to a protrusion direction (Z) of the control terminals (25).

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