OPTOELECTRONIC COMPONENT AND THE METHOD FOR MANUFACTURING AN OPTOELECTRONIC COMPONENT

Abstract

comprising an optoelectronic component (100): a semiconductor chip (1); a conversion element (2) comprising a wavelength-converting phosphor dispersed in a matrix material (5); where - the matrix material (5) is a phosphate glass and is water-resistant; - the phosphate glass includes P2O5, Al2O3, B2O3, Na2O, K2O and F, - the optoelectronic component (100) is configured to emit warm white light during operation, - the warm white light has a correlated color temperature in the range of 1500 K to 3500 K, and - the light is emitted from the semiconductor chip (1) through the conversion element (2).

Description

TECHNICAL AREA

[0001] The invention relates to an optoelectronic component. The invention further relates to a method for manufacturing an optoelectronic component. BACKGROUND

[0002] In conventional optoelectronic devices, such as conventional phosphor conversion warm-white LEDs, the phosphors used are generally mixtures of yellow-emitting and red-emitting phosphors. These phosphor mixtures are combined with a polymer material, such as silicon or epoxy. The phosphor mixtures are then cast, deposited, or coated onto a chip with a blue excitation source within LED packages. The phosphor mixture adsorbs at least some of the blue light from the chip and converts it into yellow and red light, producing a warm-white light. This phosphor-polymer mixture approach is easily applied to LED packages and is relatively inexpensive. However, the polymer materials are unstable and decompose at high temperatures and high light intensities. Publication WO 2016 / 209 871 A1 describes wavelength converters made of glass composites. Publication WO 2018 / 092 644 A1 describes an inorganic nano-fluorescent particle composite and wavelength converters. Publication US 2013 / 0207 151 A1 describes an optoelectronic semiconductor device.

[0003] There are also attempts to use glass as a replacement for polymer matrix materials to overcome stability problems, such as those encountered with phosphor-in-glass (PiG) LEDs. Most phosphor-in-glass approaches involve softening or melting the glass to ensure homogeneity of the phosphor dispersion and eliminate most of the pores. Currently available on the market are cool white PiG LEDs that use a single yellow YAG:Ce phosphor. YAG:Ce is an oxide phosphor and is relatively resistant to damage from glasses, which are typically a mixture of different oxides. However, warm white PiG LEDs are not currently available. This is due to the phosphors used in warm white LEDs. In addition to the yellow YAG:Ce phosphor, a red phosphor is also required. The most common red phosphors are nitride phosphors, such as (Ca, Sr, Ba)2Si5N8:Eu and CaAlSiN3:Eu phosphors.These nitride phosphors are very easily damaged by oxides from the glass, as they are highly sensitive to oxygen impurities. SiO₂-Na₂O-Al₂O₃-CaO glass has been used to obtain red nitride phosphors (“Novel broadband glass phosphors for high CRI WLEDs,” Optics Express, Vol. 22, Issue S3, pp. A671-A678 (2014)). Because the SiO₂-Na₂O-Al₂O₃-CaO glass must melt or soften at temperatures above 680 °C, the red nitride phosphors produced from this glass have a very low efficiency, which is indicated by damage to the glass. The degree of damage increases with increasing processing temperature.

[0004] It is important to reduce the processing temperature to avoid or minimize damage to red nitride phosphors. Therefore, it is crucial to select glasses that melt or soften at low temperatures. When processing nitride phosphor-in-glass, it is generally desirable to keep the processing temperature below 400 °C. However, low-melting-point glasses are typically not water-resistant, which is essential for conversion materials when used in LEDs or optoelectronic devices. The difficulty in finding a suitable low-melting-point glass with good water resistance poses a significant engineering challenge in the production of warm white conversion elements. SUMMARY

[0005] Embodiments of the invention include an optoelectronic component that can overcome the aforementioned disadvantages. Embodiments of the invention also include a method for manufacturing an optoelectronic component that can overcome the aforementioned disadvantages.

[0006] In one embodiment, an optoelectronic device comprises a semiconductor chip capable of emitting radiation. A conversion element includes at least one wavelength-converting phosphor dispersed in a matrix material. The matrix material is a low-melting-point phosphate glass and is water-resistant. The optoelectronic device emits warm white light during operation. BRIEF DESCRIPTION OF THE DRAWINGS Fig. Figure 1A shows a schematic representation of an optoelectronic component according to one embodiment; Fig. Figure 1B shows a schematic representation of an optoelectronic component according to one embodiment; Fig. Figure 2A shows an optoelectronic component according to one embodiment before the boiling water test; Fig. 2B shows the experimental data; Fig. Figure 2C shows the color plate of an optoelectronic component according to one embodiment; Fig. Figure 3 shows the experimental data of one embodiment; Fig. Figure 4A shows an optoelectronic component before and after the boiling water test; Fig. 4B shows an emission spectrum of an embodiment; Fig. Figure 5A shows the experimental data of one embodiment; Fig. 5B shows the color chart diagram of one embodiment; Fig. 6A shows experimental data of an embodiment; and Fig. Figure 6B shows the color plate of one embodiment.

[0007] The following list of reference numbers can be used with reference to the drawings: 100 optoelectronic components 1 semiconductor chip 2 Conversion element 3 yellow emitting phosphor 4 red emitting phosphor 5 Matrix material 6 cases DETAILED DESCRIPTION OF ILLUSTRATIVE EXECUTIONS

[0008] In at least one embodiment, the optoelectronic component comprises a semiconductor chip. The semiconductor chip is capable of emitting radiation, particularly during operation. The optoelectronic component includes a conversion element. The conversion element comprises at least one wavelength-converting phosphor, or exactly one wavelength-converting phosphor, or two wavelength-converting phosphors. The at least one phosphor is dispersed in a matrix material. The matrix material is a low-melting-point phosphate glass. The matrix material is water-resistant. The optoelectronic component emits warm white light during operation.

[0009] It should be noted that the term "optoelectronic component" does not only refer to finished components such as light-emitting diodes (LEDs) or laser diodes, but also to substrates and / or semiconductor layers, so that, for example, a combination of a copper and a semiconductor layer already forms a component and can be part of a higher-level second component in which, for example, additional electrical connections are present.

[0010] The optoelectronic component according to the invention can be, for example, a thin-film semiconductor chip, in particular a thin-film light-emitting diode chip.

[0011] According to one embodiment, the optoelectronic device comprises a semiconductor chip. The semiconductor chip can have a sequence of semiconductor layers. The semiconductor layer sequence of the semiconductor chip is preferably based on a III-V compound semiconductor material. This includes, for example, compounds of the elements indium, gallium, aluminum, nitrogen, phosphorus, arsenic, oxygen, silicon, carbon, and combinations thereof.

[0012] However, other elements and additives can also be used. The semiconductor layer sequence with an active region can, for example, be based on nitride compound semiconductor materials. In this context, "based on nitride compound semiconductor material" means characterized in that the semiconductor layer sequence, or at least a part thereof, is a nitride compound semiconductor material, preferably AlnGamIn1-n-mN, or consists thereof, where 0 ≤ n ≤ 1, 0 ≤ m ≤ 1, and n + m ≤ 1. This material does not necessarily have a mathematically exact composition according to the formula above. Rather, it can, for example, contain one or more dopants and additional components. For the sake of simplicity, however, the formula above only includes the essential components of the crystal lattice (Al, Ga, In, N), even though these can be partially replaced and / or supplemented by small amounts of other substances.

[0013] The semiconductor layer sequence comprises an active layer having at least one pn junction and / or one or more quantum well structures. During operation of the LED or semiconductor chip, electromagnetic radiation is generated in the active layer. A wavelength or wavelength maximum of the radiation preferably lies in the blue and / or ultraviolet and / or visible and / or infrared spectral range, particularly at wavelengths between 420 and 800 nm inclusive, e.g., between 440 and 480 nm inclusive.

[0014] According to one embodiment, the semiconductor chip emits radiation during operation with a wavelength range of 400 nm to 490 nm or a wavelength maximum in this range.

[0015] According to at least one embodiment, the optoelectronic component is designed as an inorganic or organic light-emitting diode, abbreviated LED or OLED. In particular, the LED or OLED emits warm white light during operation. This can mean that the light has a correlated color temperature (CCT) in the range of 2000–3500 K.

[0016] According to one embodiment, the correlated color temperature (CCT) is in the range of 1500 K to 3500 K, e.g. 3500 K with a tolerance in the range of 0, 1, 2, 3, 5 or 10% of this value.

[0017] According to one embodiment, the optoelectronic component includes a conversion element. In particular, the conversion element is arranged in the beam path of the semiconductor chip. The conversion element can be arranged on the main surface of the semiconductor chip. Alternatively, the conversion element can be designed as a casting or as a plate.

[0018] Here and in the following, "plate" means that the conversion element is manufactured separately from the semiconductor chip and applied to the main surface of the semiconductor chip using a pick-and-place process. The conversion element can be applied to the main surface of the semiconductor chip or to the side surface of the semiconductor chip. "Main surface of the semiconductor chip" here refers to the primary radiation-emitting surface of the semiconductor chip.

[0019] According to one embodiment, the conversion element comprises at least one wavelength-converting phosphor, or phosphor for short, dispersed in a matrix material. The matrix material is a low-melting-point phosphate glass and is water-resistant. The phosphor can be dispersed homogeneously in the matrix material. Alternatively, the phosphor can be dispersed in the matrix material with a concentration gradient. For example, the concentration of the phosphor in the conversion element near the semiconductor chip can be higher than the concentration of the phosphor located away from the main surface of the semiconductor chip.

[0020] According to one embodiment, the conversion element comprises at least one phosphor, exactly one phosphor, two phosphors or many phosphors.

[0021] At least one phosphor can be selected from the group consisting of (RE1-xCex)3(Al1-yA'y)5O12 with 0 < x ≤ 0,1 and 0 ≤ y ≤ 1, (RE1-xCex)3 (Al5-2yMgySiy)O12 with 0 < x ≤ 0,1 and 0 ≤ y ≤ 2, (RE1-xCex)3Al5-ySiyO12-yNy with 0 < x ≤ 0.1 and 0 ≤ y ≤ 0.5, (RE1-xCex)2CaMg2Si3O12:Ce3+ with 0 < x ≤ 0,1, (AE1-xEux)2Si5N8:Ce3+ with 0 < x ≤ 0,1, (AE1-xEux)AlSiN3 with 0 < x ≤ 0,1, (AE1-xEux)2Al2Si2N6 with 0 < x ≤ 0,1, (Sr1-xEux)LiAl3N4 with 0 < x ≤ 0,1, (Sr1-xEux)LiAl3N4 with 0 < x ≤ 0,1, (AE1-xEux)3Ga3N5 with 0 < x ≤ 0.1, (AE1-xEux)Si2O2N2 with 0 < x ≤ 0,1, (AExEuy)Si12-2x-3yAl2x+3yOyN16-y with 0,2 ≤ x ≤ 2,2 and 0 < y ≤ 0.1, (AE1-xEux)2SiO4 with 0 < x ≤ 0,1, (AE1-xEux)3Si2O5 with 0 < x ≤ 0.1, K2(Si1-x-yTiyMnx)F6 with 0 < x ≤ 0,2 and 0 < y ≤ 1-x, (AE1-xEux)5(PO4)3Cl with 0 < x ≤ 0.2, (AE1-xEux)Al10O17 with 0 < x ≤ 0.2 and combinations thereof, wherein RE is one or more of Y, Lu, Tb and Gd; AE is one or more of Mg, Ca, Sr, Ba; A' is one or more of Sc and Ga; wherein the phosphors optionally comprise one or more of halides.

[0022] The at least one phosphor may be a luminescent material or a luminescent material mixture comprising at least one of the following luminescent materials: Eu2+-doped nitrides such as (Ca,Sr)AlSiN3: Eu2+, Sr(Ca,Sr)Si2Al2N6:Eu2+, (Sr,Ca)AlSiN3*Si2N2O:Eu2+, (Ca,Ba,Sr)2Si5N8:Eu2+, (Sr,Ca)[LiAl3N4]:Eu2+; Garnet from the general system (Gd,Lu,Tb,Y)3(Al,Ga,D)5(O,X)12:RE with X = halide, N or divalent element, D = trivalent or tetravalent element and RE = rare earth metals such as Lu3(Al1-xGax)5O12:Ce3+, Y3(Al1-xGax)5O12:Ce3+; Eu2+-doped sulfides such as (Ca,Sr,Ba)S:Eu2+; Eu2+-doped SiONs such as (Ba,Sr,Ca)Si2O2N2:Eu2+; SiAlONs, for example, from the system LixMyLnzSi12-(m+n)Al(m+n)OnN16-n; beta-SiAlONs from the system Si6-xAlzOyN8-y:REz; Nitrido orthosilicates such as AE2-x-aRExEuaSiO4-xNx, AE2-x-aRExEuaSi1-yO4-x-2yNx with RE = rare earth metal and AE = alkaline earth metal; Orthosilicates such as (Ba,Sr,Ca,Mg)2SiO4:Eu2+; Chlorosilicates such as Ca8Mg(SiO4)4Cl2:Eu2+; Chlorophosphates such as (Sr,Ba,Ca,Mg)10(PO4)6Cl2:Eu2+; BAM luminescent materials from the BaO-MgO-Al2O3 system such as BaMgAl10O17:Eu2+; Halophosphates such as M5(PO4)3(Cl,F):(Eu2+,Sb3+,Mn2+); SCAP luminescent materials such as (Sr,Ba,Ca)5(PO4)3Cl:Eu2+.

[0023] Furthermore, “quantum dots” can also be introduced as converter materials. Quantum dots in the form of nanocrystalline materials containing a compound from group II-VI and / or a compound from group III-V and / or a compound from group IV-VI and / or metal nanocrystals are preferred in this case.

[0024] According to one embodiment, the conversion element comprises two phosphors, a green and / or yellow emitting phosphor and a red emitting phosphor.

[0025] Green and / or yellow emitting phosphor means here and in the following that the phosphor emits radiation in the dominant wavelength range of 550 nm to 590 nm.

[0026] Red-emitting phosphor means here and in the following that the phosphor emits radiation during operation with a dominant wavelength range of a maximum of 590 nm to 750 nm.

[0027] According to one embodiment, the yellow-emitting phosphor is selected from the group consisting of LuAG:Ce, YAG:Ce, β-SiAlON:Eu and SrSiON:Eu.

[0028] According to one embodiment, the red-emitting phosphor is selected from the group consisting of CaAlSiN3:Eu, (Ca, Sr, Ba)2Si5N8:Eu, α-SiAlON:Eu and K2SiF6:Mn4+.

[0029] According to one embodiment, the conversion element comprises inorganic powder for adjusting its scattering and / or thermal conductivity properties. The inorganic powder can be in the form of nanoparticles. These nanoparticles can be oxides, for example SiO2, ZrO2, TiO2, Al2O3, ZnO; nitrides, for example AlN, Si3N4, BN, GaN; or carbon-based nanoparticles, for example carbon nanotubes, graphene, and their derivatives.

[0030] According to one embodiment, the inorganic powder is selected from the group consisting of TiO2, ZrO2, Al2O3, AlN.

[0031] According to one embodiment, the total content of the at least one phosphor in the conversion element is in the range of 25 wt.% to 40 wt.%, for example 30 wt.%.

[0032] According to one embodiment, the conversion element has low porosity and thus a high density. The density of the conversion element is, for example, greater than 50%. Preferably, the density of the conversion element is greater than 60%. Particularly preferably, the density of the conversion element is greater than 75%. According to one embodiment, the ratio of the yellow-emitting phosphor to the red-emitting phosphor is in the range of 3:1 to 5:1, for example, 4:1 or 3.75:1.

[0033] According to one embodiment, the CRI of the optoelectronic component is greater than 90, for example 91.

[0034] According to one embodiment, the conversion element is free of silicon and / or epoxy. In particular, the conversion element comprises a matrix material. The matrix material is made of a low-melting-point phosphate glass. The low-melting-point phosphate glass is water-resistant. This can mean that when the material is exposed to water or a water-containing environment, its appearance does not change, it does not dissolve, and it exhibits no or only a very slight weight loss.

[0035] According to one embodiment, the low-melting phosphate glass comprises or consists of the following materials: P2O5, Al2O3, B2O3, Na2O, K2O and F. The commercial glass 01-4102p offered by Tomatec can be used.

[0036] Alternatively, other phosphate glasses with a low melting point and good water resistance can be used.

[0037] The inventors realized that using a glass with a low melting point in the conversion element with good water resistance results in a warm white optoelectronic component.

[0038] The advantages of using the invention lie firstly in the inorganic warm white phosphor conversion with good efficiency (no or minimal damage to the red nitride phosphor), secondly it is more resistant to high temperatures and high excitation light intensity than its predecessor phosphor-in-polymer, thirdly it has a higher thermal conductivity than phosphor-in-polymer and can dissipate heat better in the LED housings.

[0039] According to one embodiment, the conversion element can be manufactured at a processing temperature below 400°C.

[0040] According to one embodiment, the optoelectronic component comprises scattering and / or reflecting particles.

[0041] The scattering particles can, for example, consist of a metal oxide such as aluminum oxide or titanium oxide. The reflective particles can be made of, or consist of, a metal fluoride such as calcium fluoride or a silicon oxide.

[0042] The mean diameter of the scattering particles, for example a mean diameter d50 in Q0, is preferably between 0.3 µm and 5 µm inclusive. The weight fraction of the scattering particles in the total casting material is preferably between 1% and 30% inclusive, particularly between 0.5% and 5% inclusive. The particles act as scattering particles due to their preferably white color and / or their refractive index difference compared to the matrix material.

[0043] The invention further relates to a method for manufacturing an optoelectronic component. In particular, the optoelectronic component mentioned above is manufactured by the following method. Specifically, the definitions and exemplary embodiments given for the optoelectronic component also apply to the method for manufacturing an optoelectronic component and vice versa.

[0044] The process for manufacturing an optoelectronic component comprises the following steps. A) Application of a powdered matrix material that is a low-melting-point phosphate glass and water-resistant, B) Application of a powdered phosphor or several phosphors capable of converting radiation, C) Mixing the powdered matrix material and the at least one powdered phosphor, and D) Sintering of the mixture from step C) at a maximum processing temperature of 400°C under a reduced or inert atmosphere.

[0045] According to one embodiment, the reducing or inert atmosphere is a nitrogen atmosphere.

[0046] According to one embodiment, the method, particularly in step C), is solvent-free.

[0047] According to one embodiment, step D) is applied with a maximum pressure of 50 MPa.

[0048] According to one embodiment, the processing temperature in step D) is a maximum of 300°C.

[0049] According to one embodiment, the phosphors are embedded in the matrix material by means of a spark plasma sintering process.

[0050] Further advantageous embodiments and developments will result from the embodiments described below as examples in conjunction with the figures.

[0051] In the exemplary embodiments and figures, identical or seemingly identical elements may be designated with the same reference numerals. The depicted elements and their relative sizes are not to be considered true to scale. Rather, individual elements such as layers, components, devices, and areas may be exaggerated for clarity and better understanding.

[0052] Fig. Figure 1A shows a schematic representation of an optoelectronic component 100 according to one embodiment. The optoelectronic component 100 comprises a housing 6. A semiconductor chip 1 is mounted in the recess of the housing 6. The semiconductor chip 1 is capable of emitting radiation, in particular blue light. A conversion element 2 is mounted in the recess. The conversion element 2 is shown as a casting. The conversion element comprises two phosphors 3 and 4 and a matrix material 5, which is a low-melting-point phosphate glass. The two phosphors are a yellow-emitting and a red-emitting phosphor. The yellow-emitting phosphor 3 is, for example, YAG:Ce. The red-emitting phosphor 4 is, for example, (Ca, Sr, Ba)₂Si₅N₈:Eu. The optoelectronic component emits warm white light during operation.

[0053] Fig. Figure 1B shows a schematic representation of an optoelectronic device 100 according to one embodiment. The optoelectronic device 100 comprises a substrate 7 on which a semiconductor chip 1 is deposited. A conversion element 2 is deposited on the semiconductor chip 1, in particular on the main surface of the semiconductor chip. The conversion element 2 completely covers the main surface of the semiconductor chip 1. The side faces of the semiconductor chip 1 are free of the conversion element 2. The conversion element 2 is configured as a plate. The plate is deposited onto the main surface of the semiconductor chip 1 using a pick-and-place process. The conversion element 2 comprises a red-emitting phosphor and a yellow-emitting phosphor 3 dispersed in a matrix material 5. The matrix material 5 is a low-melting-point phosphate glass.

[0054] The optoelectronic component 100 according to Fig. 1B is capable of emitting warm white light during operation.

[0055] The optoelectronic component can be manufactured as follows.

[0056] The matrix material, specifically the low-melting-point glass powder, the yellow-emitting phosphor, and the red-emitting phosphor, each in powder form, are weighed out according to a specific ratio. They are then mixed manually using an agate mortar and pestle. Next, they are mixed in a plastic container in a Thinky ARE-500 mixer at 1000 rpm for two minutes. Approximately 0.8 g of the mixed powder is placed into a graphite die with a 15 mm inner diameter. The samples are sintered using the Dr. Sinter Lab™ SPS machine from SPS Syntex Inc., model SPS515, at a maximum force of 50 kN and a maximum current of 1500 A. The sample is sintered under a nitrogen atmosphere. The samples are sintered at peak temperature for several minutes at a maximum pressure of 50 MPa.

[0057] In an example of a warm white optoelectronic component, the phosphate glass powder TMS-476 from Tomatec, Japan, is used. The yellow phosphor used is Lu3Al5O12:Ce, for example, the phosphor LuAG:Ce L186 from OSRAM. The red phosphor used is a Mitsubishi CaAlSiN3:Eu Br101A phosphor. The weight ratio of yellow to red phosphor is 3.75:1, and the total percentage of phosphor in the mixture is 35 wt.%.

[0058] 0.8 g of phosphor-in-glass mixtures are sintered at 290°C, with a holding time of zero minutes under a maximum pressure of 50 MPa. The sintered components or wafers are ground and thinned to approximately 120 µm.

[0059] Fig. Figure 2A shows the resulting optoelectronic components, here referred to as the S1436 sample. The optoelectronic components, or disks, are measured using an optical power tester. The disks are placed on a platform with a 0.6 mm diameter pinhole through which blue light with a dominant wavelength of 448 nm from a blue semiconductor chip is shone. The transmitted and converted light are measured at the top of the sample disk. The conversion efficiency, CE, is calculated by dividing the lumens by the optical power of the blue excitation semiconductor chip. The disk is then immersed in boiling water for 30 minutes. This boiling water test is one of the rapid water resistance tests. The disk before the boiling water test ( Fig. 2A) is measured by the tester. The measurement results are in Fig. 2B listed with G - Glass P - Fluorescent materials SID - Example ID D - Thickness BW - Boiling water / 30m

[0060] The measured colors Cx and Cy are in Fig. 2C shown (rectangle, 1 - sample before the boiling water test; triangle, 2 - sample after the boiling water test).

[0061] The warm white optoelectronic component (probe S1436) disk exhibits a relatively high efficiency for a sintered sample, with a CE of 69.7 Im / W. The disk achieves a warm white color temperature, indicating that the red phosphor is undamaged or only minimally damaged. However, after the 30-minute boiling water test, the disk's emission color shifts towards red, with an average CX increase of 0.0287, and the CE value drops to 58.5 Im / W, a decrease of 16%.

[0062] It is evident that the phosphate glass TMS-476, as a comparative embodiment, exhibits poor water resistance even at a temperature low enough to cause no or only minor damage to red-emitting phosphor.

[0063] Another sample is, for example, S1443. This sample is made from low-melting-point ferro-PbO-B₂O₃-ZnO glass EG2760 as a comparative embodiment. The optoelectronic device is measured before and after a boiling water test. The experimental data are presented in Fig. 3. After the boiling water test, the color mean CX of the optoelectronic component increases by 0.0258, shifted towards red. The CE value decreases by 32%. This shows that the EG2760 glass is also not water-resistant.

[0064] In another example, the phosphate glass powder 01-4102p from Tomatec, Japan, is used. The yellow-emitting phosphor is LuAG:Ce L186 from OSRAM. The red-emitting phosphor used is Mitsubishi CaAlSiN3:Eu BR101A. The weight ratio of yellow-emitting to red-emitting phosphor is 3.75:1, and the total weight fraction of the phosphor in the mixture is 35%.

[0065] 0.8 g of phosphor and glass mixtures are sintered at 300°C for 0 minutes under a maximum pressure of 50 MPa. The sintered optoelectronic component or wafers are ground and thinned to approximately 120 µm.

[0066] Fig. Figure 4A shows the optoelectronic component before the boiling test.

[0067] Fig. Figure 4B shows a typical spectrum of the inventive optoelectronic device, excited at 448 nm with a blue-emitting semiconductor chip. It shows the intensity I as a function of the wavelength in nm. It has a color temperature close to 3500 K and a CRE of 90.5, indicating high CRI (Color Rendering Index) warm white emission.

[0068] The Fig. 5A and Fig. Figure 5B shows an example of the embodiment.

[0069] In an optoelectronic component, for example, a disk S1509 is immersed in boiling water for 30 minutes. The measurement results of the disk by the tester before and after the boiling water test are shown in Fig. Listed as 5A. The color is in Fig. 5B shown (rectangle, 1 - sample before the boiling water test; triangle, 2 - sample after the boiling water test).

[0070] After 30 minutes of immersion in boiling water, the embodiment's color value Cx increases by only 0.0069, while CE increases from 71.9 to 78.8 Im / W. This conversion element or optoelectronic component and the matrix material 01-4102p show a greater improvement in water resistance than the glasses TMS-476 and EG2760.

[0071] According to another embodiment, the same 01-4102p phosphate glass powder from Tomatec, Japan, is used. The weight ratio of yellow-emitting phosphor to red-emitting phosphor is 4:1, and the total weight fraction of phosphor in the mixture is 35%. 0.8 g of phosphor-in-glass mixture are sintered at 300°C for 0 minutes under a maximum pressure of 50 MPa. The sample disc S1545 is produced from this phosphor glass mixture. The disc is immersed in boiling water for one hour. The measurement results of the disc before and after the boiling water test are shown in Fig. 6A is listed, and the color data is in Fig. 6B shown (rectangle, 1 - sample before the boiling water test; triangle, 2 - sample after the boiling water test).

[0072] The color intensity of the S1545 disc increases by only 0.0046, while CE rises from 81.5 Im / W to 83.9 after a one-hour boiling water test. These results confirm the superior water resistance of 01-4102p phosphate glass. This low-melting-point phosphate glass may include or be composed of the following materials: P₂O₅, Al₂O₃, B₂O₃, Na₂O, K₂O, and F.

[0073] The exemplary embodiments and their properties described in connection with the figures can also be combined with one another according to further exemplary embodiments, even if such combinations are not explicitly shown in the figures. Furthermore, the exemplary embodiments described in connection with the figures may have additional or alternative features as described in the general part. REFERENCE MARK LIST 100 optoelectronic components 1 semiconductor chip 2 Conversion element 3 yellow emitting phosphor 4 red emitting phosphor 5 Matrix material 6 cases 7 Substrat

Claims

[1] comprising an optoelectronic component (100): a semiconductor chip (1); a conversion element (2) comprising a wavelength-converting phosphor dispersed in a matrix material (5); where - the matrix material (5) is a phosphate glass and is water-resistant; - the phosphate glass includes P2O5, Al2O3, B2O3, Na2O, K2O and F, - the optoelectronic component (100) is configured to emit warm white light during operation, - the warm white light has a correlated color temperature in the range of 1500 K to 3500 K, and - the light is emitted from the semiconductor chip (1) through the conversion element (2). [2] Optoelectronic component (100) according to the preceding claim, wherein the phosphate glass has properties such that the conversion element (2) can be manufactured at a processing temperature below 400 °C. [3] Optoelectronic component (100) according to one of the preceding claims, wherein the conversion element (2) comprises a red emitting phosphor (4) and a second phosphor, wherein the second phosphor comprises a green or yellow emitting phosphor (3). [4] Optoelectronic component (100) according to claim 3, wherein the second phosphor comprises a yellow emitting phosphor (3) selected from the group consisting of LuAG:Ce, YAG:Ce, β-SiAlON:Eu and SrSiON:Eu. [5] Optoelectronic component (100) according to claim 3 or 4, wherein the red emitting phosphor (4) comprises a phosphor selected from the group consisting of CaAlSiN3:Eu, (Ca,Sr,Ba)2Si5N8:Eu, α-SiAlON:Eu and K2SiF6:Mn 4+ consists. [6] Optoelectronic component (100) according to one of the preceding claims, wherein the conversion element (2) comprises inorganic powder for adjusting a scattering property or thermal conductivity property of the conversion element (2). [7] Optoelectronic device (100) according to claim 6, wherein the inorganic powder comprises a powder selected from the group consisting of TiO2, ZrO2, Al2O3, AlN and synthetic diamonds. [8] Optoelectronic component (100) according to one of the preceding claims, wherein the total content of the phosphor in the conversion element (2) is in the range of 25 to 40 wt.%. [9] Optoelectronic component (100) according to one of the preceding claims, wherein the conversion element (2) comprises a yellow emitting phosphor (3) and a red emitting phosphor (4), wherein the ratio of the yellow emitting phosphor (3) to the red emitting phosphor (4) is in the range of 3:1 to 5:

1. [10] Optoelectronic component (100) according to one of the preceding claims, wherein the optoelectronic component (100) has a CRI (color rendering index) of more than 90. [11] Optoelectronic device (100) according to one of the preceding claims, wherein the warm white light emitted during operation has a wavelength range of 400 nm to 490 nm. [12] Optoelectronic component (100) according to any of the preceding claims, wherein the conversion element (2) is free of silicone or free of epoxy. [13] Method for manufacturing an optoelectronic device (100), wherein the method comprises: Forming a conversion element (2) over a main surface of a semiconductor chip (1); wherein the conversion element (2) comprises a wavelength-converting phosphor dispersed in a matrix material (5); wherein the matrix material (5) is a phosphate glass and is water-resistant; and the phosphate glass comprises P2O5, Al2O3, B2O3, Na2O, K2O and F; wherein the optoelectronic component (100) is configured to emit warm white light during operation, and the warm white light has a correlated color temperature in the range of 1500 K to 3500 K; and wherein the light is emitted from the semiconductor chip (1) through the conversion element (2). [14] Method according to the preceding claim, wherein the formation of the conversion element (2) comprises: Providing a powdered matrix material (5) which is a phosphate glass and is water-resistant; Providing a powdered phosphor capable of converting radiation; Mixing the powdered matrix material (5) and the powdered phosphor; and Sintering of the mixture of the powdered matrix material (5) and the powdered phosphor at a maximum processing temperature of 400°C under a reduced atmosphere. [15] Procedures, including: Providing a powdered matrix material (5) which is a phosphate glass and is water-resistant, wherein the phosphate glass comprises P2O5, Al2O3, B2O3, Na2O, K2O and F; Providing a powdered phosphor capable of converting radiation; the powdered phosphors are selected from the group consisting of LuAG:Ce, YAG:Ce, β-SiAlON:Eu, SrSiON:Eu, CaAlSiN3:Eu, (Ca,Sr,Ba)2Si5N8:Eu, α-SiAlON:Eu and K2SiF6:Mn 4+ includes; Mixing the powdered matrix material (5) and the powdered phosphor; and Sintering of the mixture of the powdered matrix material (5) and the powdered phosphor at a maximum processing temperature of 400°C under a reduced atmosphere. [16] Method according to any one of claims 14 to 15, wherein the method is solvent-free when mixing the powdered matrix material (5) and the powdered phosphor. [17] Method according to any one of claims 14 to 16, wherein the sintering is carried out at a maximum pressure of 50 MPa. [18] Method according to any one of claims 14 to 17, wherein the sintering is carried out at a temperature of less than or equal to 300 °C.

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