Methods for the production of gallium arsenide single crystals, methods for the production of gallium arsenide single crystal substrates, gallium arsenide single crystal substrates and gallium arsenide single crystals

Abstract

A method for producing a gallium arsenide single crystal comprises pulling the gallium arsenide single crystal from a seed crystal using a gallium arsenide single crystal growing apparatus. A growth face of the seed crystal is a plane with a deviation angle greater than or equal to 4° and less than or equal to 20° with respect to a (100) plane of the gallium arsenide single crystal. The gallium arsenide single crystal growing apparatus has a crucible with a cylindrical section, a crucible support base that holds the crucible, and a heating element that heats the crucible. The crucible has a seed crystal receiving section, an enlarged-diameter section connected to the seed crystal receiving section, and a straight cylindrical section connected to the enlarged-diameter section on a side opposite the side of the seed crystal receiving section.The enlarged-diameter section has a truncated cone shape with a diameter that increases upwards in the axial direction of the crucible and is connected to the seed crystal receiving section on a small-diameter side of the enlarged-diameter section. The straight cylindrical section has a hollow cylindrical shape and is connected to a large-diameter side of the enlarged-diameter section. The crucible support base holds the enlarged-diameter section. The enlarged-diameter section consists of an upper and a lower section. The upper section is separated from the crucible support base, and the lower section is in contact with the crucible support base.

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