Gallium arsenide wafer anti-permeation protection layer capable of volatilizing at 700 DEG C and preparation method thereof
The metal-organic framework derived layer or stress mismatch-bursting desorption composite capping layer formed by organic ligands solves the problems of density and removal of the anti-permeability protective layer on the surface of gallium arsenide at high temperature in the prior art. It achieves residue-free self-evaporation and surface cleanliness in the 700℃ high temperature process, reduces production costs, and is suitable for complex patterned substrates.
Patent Information
- Application Number
- CN202610496647.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-04-15
- Publication Date
- 2026-06-30
AI Technical Summary
Existing technologies cannot provide a dense anti-permeation protective layer at high temperatures, cannot remain stable in high-temperature processes at 700°C, and the removal process requires wet chemical steps, which can easily damage the gallium arsenide surface and is costly.
A metal-organic framework derived layer formed by the coordination of organic ligands with gallium atoms on the surface of gallium arsenide is transformed into a dense protective layer through thermal curing and spontaneously desorbed at 700℃. Alternatively, a composite capping layer of stress mismatch-burst desorption is used, or the arsenic capping layer is desorbed at low temperature with the assistance of hydrogen radicals, thus achieving a completely dry removal process.
It achieves residue-free self-evaporation in a 700℃ high-temperature process, resulting in a clean surface, reduced production costs, and avoids surface damage and chemical residues caused by wet etching. It is suitable for complex patterned substrates and compatible with high-throughput production.