Semiconductor device and light detection device

The semiconductor device addresses slow charge transfer in solid-state imaging devices by employing a field-effect transistor with a thicker sidewall insulator and multiple gate electrodes, improving performance through reduced parasitic capacitance.

DE112024003178T5Pending Publication Date: 2026-06-03SONY SEMICON SOLUTIONS CORP
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Patent Information

Authority / Receiving Office
DE · DE
Patent Type
Applications
Current Assignee / Owner
SONY SEMICON SOLUTIONS CORP
Filing Date
2024-06-06
Publication Date
2026-06-03

AI Technical Summary

Technical Problem

The existing solid-state imaging devices face challenges with slow transfer rates of electrical charge due to parasitic capacitance arising from the floating diffusion, insulator, and extraction electrode, which affects the performance characteristics of the transfer transistor.

Method used

The semiconductor device incorporates a field-effect transistor with an insulated gate embedded in a groove's side wall, featuring a thicker sidewall insulator and an electrode electrically coupled to the gate electrode, along with a transfer transistor design that includes multiple gate electrodes and insulating films to enhance charge transfer efficiency.

Benefits of technology

This configuration improves the transfer rate of electrical charge, enhancing the performance characteristics of the semiconductor device and light detection device by reducing parasitic capacitance and optimizing transistor properties.

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Abstract

This semiconductor device comprises: a trench extending from a first surface of a substrate to a second surface opposite the first surface; a field-effect transistor with an insulated gate, provided in a lower part of the trench and having a gate electrode embedded in the trench sidewall with a gate insulating film between them; a sidewall insulator provided on the trench sidewall in an upper part of the trench and having a thickness greater than the thickness of the gate insulating film in the same direction; and an electrode embedded in the upper part of the trench with the sidewall insulator between it and electrically connected to the gate electrode.
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