Optoelectronic component for detecting a gas

Abstract

An optoelectronic component for detecting a gas is described. According to one embodiment, the optoelectronic component (1) for detecting a gas comprises a radiation-emitting element (4) configured to emit electromagnetic radiation, a measuring unit (5) comprising a measuring range (51) and a reference range (52), a detector unit (6) comprising at least a first photodetector range (61) and a second photodetector range (62), and a reflection prism (8), wherein the reflection prism (8) is arranged on the radiation-emitting element (4) and the detector unit (6), the measuring range (51) being arranged in a first beam path of the electromagnetic radiation between the radiation-emitting element (4) and the first photodetector range (61).wherein the reference area (52) is arranged in a second beam path of the electromagnetic radiation between the radiation-emitting element (4) and the second photodetector area (62), and wherein the optoelectronic component (1) is surface-mountable. In particular, the radiation-emitting element (4) comprises a micro-LED.

Description

[0001] An optoelectronic component for detecting a gas is specified.

[0002] The task is to provide a compact optoelectronic component for detecting a gas.

[0003] An optoelectronic device for detecting a gas is described. Specifically, the optoelectronic device is configured to detect the presence of a gas using electromagnetic radiation. For example, a change in the intensity, wavelength, frequency, and / or polarization of the electromagnetic radiation in the presence of the gas is detectable. The magnitude of the change depends on the amount of gas present. For example, if more gas is present, the change is more pronounced. The optoelectronic device is configured to detect a gas at a concentration between 0.01% and 4%. The optoelectronic device is specifically a gas sensor. The gas is, for example, hydrogen (H₂), ammonia (NH₃), or a pollutant gas such as SO₂. x or NO x .

[0004] According to at least one embodiment, the optoelectronic component comprises a radiation-emitting element configured to emit electromagnetic radiation. In particular, the radiation-emitting element is a radiation-emitting diode such as a light-emitting diode (LED).

[0005] Alternatively, the radiation-emitting element can be a surface-emitting laser, such as a vertical resonator surface-emitting laser (VCSEL) or an edge-emitting laser. Here and in the following, the terms light and electromagnetic radiation are used interchangeably. Electromagnetic radiation includes, in particular, a wavelength or wavelength range from the ultraviolet (UV), visible (VIS), and / or infrared (IR) wavelength range. For example, electromagnetic radiation is radiation in the infrared wavelength range. Specifically, electromagnetic radiation includes a wavelength or wavelength range between and including 1100 nm and 1500 nm, for example, between and including 1200 nm and 1400 nm, or between and including 1250 nm and 1350 nm, for example, between and including 1280 nm and 1300 nm.Alternatively, the electromagnetic radiation can have a wavelength or wavelength range between and including 800 nm and 900 nm.

[0006] According to at least one embodiment, the optoelectronic component comprises a measuring unit that includes a measuring range and a reference range. The measuring unit is specifically configured to detect the gas. For example, the measuring range of the measuring unit is configured to interact with the gas, for instance, to bind the gas to the measuring range. In particular, the reference range is configured not to interact with the gas.

[0007] According to at least one embodiment, the optoelectronic component comprises a detector unit comprising at least a first photodetector region and a second photodetector region. In particular, each photodetector region is configured to detect electromagnetic radiation incident upon it. For example, each photodetector region is configured to detect the intensity, wavelength, frequency, and / or polarization of the incident electromagnetic radiation. In particular, the first photodetector region and the second photodetector region are operable independently. For example, the first photodetector region comprises or consists of a first photodiode, and the second photodetector region comprises or consists of a second photodiode.Alternatively, the first photodetector region can be the first part of a two-part photodiode, and the second photodetector region can be the second part of the same two-part photodiode. The photodetector unit can comprise a plurality of photodetector regions. For example, the photodetector unit can include a plurality of first photodetector regions and a plurality of second photodetector regions.

[0008] According to at least one embodiment, the optoelectronic device comprises a reflection prism. In particular, a reflection prism comprises at least one, and preferably two, side surfaces that are reflective with respect to electromagnetic radiation, and at least one side surface that is transmissive with respect to electromagnetic radiation. It should be noted that the reflectivity of the side surface(s) of the reflection prism depends on the nature of the interface of the reflection prism. A reflection prism surrounded by air exhibits total internal reflection at the reflecting interfaces. In the case that the interface is formed with a material other than air, electromagnetic radiation can penetrate the interface and enter the material at the interface.

[0009] The reflection prism is, for example, a triangular reflection prism. A triangular reflection prism comprises two parallel triangular sides and three rectangular sides. The triangular sides form, for example, a right-angled triangle, in particular an isosceles right-angled triangle. In other words, the reflection prism can be described as a right-angled reflection prism, in particular an isosceles right-angled reflection prism. For example, the rectangular sides adjacent to the right angle are reflective for electromagnetic radiation. The rectangular side opposite the right angle is, for example, transmissive for electromagnetic radiation. The reflection prism is, in particular, made of optical glass. The reflection prism has, for example, a length of its longest side between and including 1 mm and 5 mm, for example, 3 mm.

[0010] In particular, the base of the reflection prism is simply connected. The term "simply connected" is to be understood here in a mathematical sense. For example, the base of the reflection prism is a continuous surface without cavities and / or cutouts. For example, the reflection prism is free of cutouts, cavities, and / or openings.

[0011] According to at least one embodiment, the reflection prism is arranged on the radiation-emitting element and the detector unit. In particular, the reflection prism is arranged on the radiation-emitting element and the first photodetector area and / or the second photodetector area. For example, the reflection prism is arranged such that the transmissive rectangular side for electromagnetic radiation faces the radiation-emitting element and the first photodetector area and / or the second photodetector area. The reflection prism can be mounted on holding devices or on the radiation-emitting element and the detector unit.

[0012] According to at least one embodiment, the measuring area is arranged in a first beam path of the electromagnetic radiation between the radiation-emitting element and the first photodetector area. In particular, the first beam path is a path of at least a portion of the electromagnetic radiation that originates from the radiation-emitting element and terminates in the first photodetector area. In other words, the first photodetector area is configured for detecting a measurement signal.

[0013] According to at least one embodiment, the reference region is arranged in a second electromagnetic beam path between the radiation-emitting element and the second photodetector region. In particular, the second beam path is a path of at least a portion of the electromagnetic radiation emanating from the radiation-emitting element and terminating in the second photodetector region. In other words, the second photodetector region is configured for detecting a reference signal. Specifically, the first and second beam paths are independent of each other. For example, the first and second beam paths are separate beam paths. The first and second beam paths can be parallel to each other. For example, the first and second beam paths do not overlap.

[0014] In particular, the first beam path and / or the second beam path run essentially exclusively within the reflection prism. In other words, an optical path between the radiation-emitting element and the detector unit runs essentially exclusively within the reflection prism. Here and in the following, "essentially" means at least 90%, for example at least 95%, for example at least 98%.

[0015] According to at least one embodiment, the optoelectronic component is surface-mountable. A surface-mountable optoelectronic component is, in particular, directly mountable onto the surface of a printed circuit board (PCB). The optoelectronic component is referred to, for example, as a surface-mount device (SMD). Here and in the following, mountable or mounted components or devices can be attached or fastened to an underlying surface such as a substrate, a housing, or a printed circuit board. The components or devices can be attached by a connecting element such as a solder contact or an adhesive layer. In particular, the optoelectronic component for gas detection is designed as a surface-mountable package.

[0016] The optoelectronic component is, for example, a gas sensor designed as a surface-mountable assembly.

[0017] According to at least one embodiment, the optoelectronic device comprises a radiation-emitting element configured to emit electromagnetic radiation, a measuring unit comprising a measuring range and a reference range, a detector unit comprising at least a first photodetector range and a second photodetector range, and a reflection prism, wherein the reflection prism is arranged on the radiation-emitting element and the detector unit, wherein the measuring range is arranged in a first beam path of the electromagnetic radiation between the radiation-emitting element and the first photodetector range, wherein the reference range is arranged in a second beam path of the electromagnetic radiation between the radiation-emitting element and the second photodetector range, and wherein the optoelectronic device is surface-mountable.

[0018] The present application presents a surface-mountable optoelectronic device for gas detection, incorporating all components of a gas detection system in a compact design. The optoelectronic device is simple and cost-effective. The measuring unit, with a measuring range and a reference range, has a straightforward and therefore robust design, and the reference range enables reference measurements. These reference measurements can be performed automatically without the use of valves, reference gases, or reference chambers. This can advantageously extend the service life and lifespan of the optoelectronic device.The reference measurement makes the gas detection measurement independent of factors such as the color or spectral composition of the emitting element, which can change during the element's lifetime, for example, due to dust accumulation. Therefore, it is advantageous to base the measurement on a relative result, determined by comparing the measured signal with the reference signal, rather than using only the absolute value of the measured signal. In other words, the optoelectronic component allows for the detection of a relative change in the measured signal compared to the reference signal. The measurement result is thus independent of the absolute intensities detected by the photodetector areas. Furthermore, the reference measurement suppresses interference and improves the signal-to-noise ratio.The signal-to-noise ratio is further improved by using a first photodetector area to provide the measurement signal and a second photodetector area to provide the reference signal. In addition, the first and / or second beam path can be easily and efficiently aligned between the radiation-emitting element and the detector unit by using a simple optical prism arrangement.

[0019] According to at least one embodiment, the optoelectronic component comprises a substrate. The substrate is specifically configured to provide a support and / or a mounting for the components of the optoelectronic component, such as the radiation-emitting element and the detector unit. The substrate is, for example, an SMT substrate. Here and in the following, SMT is the abbreviation for surface mount technology. Specifically, an SMT substrate comprises only solderable pads or solderable pins for connecting the SMT substrate to, for example, a printed circuit board. In other words, the SMT substrate is free of wire connections. An SMT substrate can advantageously be provided cost-effectively.An optoelectronic component comprising an SMT substrate is advantageously easy to install, and in particular easy to integrate into a control system, such as a heating system control system.

[0020] According to at least one embodiment, the electrical connection surfaces of the optoelectronic component are arranged exclusively on the side of the substrate facing away from the radiation-emitting element, the measuring unit, the detector unit, and the reflection prism. In particular, all electrical connection surfaces of the optoelectronic component are arranged on one side of the substrate, with the components of the optoelectronic component, such as the radiation-emitting element, the measuring unit, the detector unit, and the reflection prism, being arranged on the opposite side of the substrate. A substrate with electrical connection surfaces facing exclusively away from the components of the optoelectronic component can advantageously be surface-mounted simply and efficiently.

[0021] According to at least one embodiment, the gas is hydrogen. Hydrogen gas is used as a fossil-free energy carrier, for example, as hydrogen fuel. Hydrogen gas is highly flammable and forms explosive mixtures with air. These explosive reactions can be triggered by sparks, heat, or sunlight. Therefore, cost-effective hydrogen sensors are needed for the safe introduction and distribution of hydrogen gas for private mobility and building technology applications such as heating or energy storage. A simple and inexpensive optoelectronic component for detecting hydrogen in a compact design can advantageously be used to increase the safety of such applications.

[0022] According to at least one embodiment, the optoelectronic component comprises a housing. The housing is designed to protect the components of the optoelectronic component, such as the radiation-emitting element, the measuring unit, the detector unit, and the reflection prism, from damage, in particular by forming a protective barrier against external influences, such as dust deposits on sensitive surfaces of the components. Specifically, the housing is impermeable to the electromagnetic radiation emitted by the radiation-emitting element. In this case, the environment surrounding the optoelectronic component is protected from the electromagnetic radiation emanating from the radiation-emitting element.Furthermore, the optoelectronic component, in particular the detector unit, is protected from electromagnetic radiation from external radiation sources located outside the optoelectronic component. The housing can also be opaque to electromagnetic radiation having a different wavelength or wavelength range than that emitted by the radiation-emitting element. An enclosure, especially a radiation-impermeable enclosure, can advantageously improve the signal-to-noise ratio and suppress interference.

[0023] According to at least one embodiment, the housing is manufactured by injection molding. An injection-molded housing is stable and can advantageously be produced cost-effectively. According to at least one embodiment, the substrate and the housing enclose a volume, in particular completely. The volume is, in particular, a three-dimensional space surrounded by side surfaces. The substrate can cover one side surface of the volume, and the housing can cover the remaining side surfaces of the volume. For example, the volume is completely surrounded by the substrate and the housing in such a way that electromagnetic radiation, in particular at least electromagnetic radiation with the wavelength or wavelength range emitted by the radiation-emitting element, cannot enter the volume from external light sources. Surfaces of the housing facing the volume can be referred to as the inner surfaces of the housing.

[0024] According to at least one embodiment, the radiation-emitting element, the measuring unit, the detector unit, and the reflection prism are arranged within the volume. In particular, the radiation-emitting element, the measuring unit, and the detector unit are arranged on the substrate and / or on inner surfaces of the housing within the volume. This advantageously allows for a compact design of the optoelectronic component.

[0025] According to at least one embodiment, the housing includes a gas inlet. In particular, the gas inlet is configured to supply the gas within the volume. For example, the gas inlet is an opening in the housing through which the gas can flow into the volume. The gas inlet can, for example, be located within the housing or be a side of the housing. In this case, part or all of the side of the housing can be free of housing material. For example, the gas inlet is located in a side of the housing opposite the substrate. Alternatively, the gas inlet can be located in a side of the housing that differs from the side opposite the substrate. A gas inlet is a simple way to supply the gas within the volume.

[0026] According to at least one embodiment, the gas inlet comprises at least one cavity in at least one side of the housing, with a layer of housing material remaining between the cavity and the measuring unit. In particular, the housing is configured as a conformal coating of the radiation-emitting element, the measuring unit, the detector unit, and the reflection prism. In this case, the housing material can be permeable to the gas, especially a thin layer of the housing material. The gas can enter the cavity from the outside and diffuse through the housing material layer to the measuring unit. In particular, the at least one cavity is arranged in a side of the housing opposite the substrate.A gas inlet comprising a cavity and a layer of the housing material can advantageously be stable and provide protection against the disruptive influence of external electromagnetic radiation. Furthermore, the housing can be advantageously more robust.

[0027] According to at least one embodiment, the gas inlet is covered by a cover that is opaque to the electromagnetic radiation emitted by the radiation-emitting element. In particular, the cover is permeable to the gas. In other words, the gas can pass through the cover, while electromagnetic radiation having at least the wavelength or wavelength range of the electromagnetic radiation emitted by the radiation-emitting element cannot pass through the cover. For example, the cover is opaque to external electromagnetic radiation from radiation sources outside the optoelectronic device, especially to external electromagnetic radiation having at least the wavelength or wavelength range emitted by the radiation-emitting element.A cover on the gas inlet can advantageously be stable and provide protection against the disruptive influence of external electromagnetic radiation.

[0028] According to at least one embodiment, the cover comprises a meander-perforated plate, an inverse opal layer, a foamed plastic layer, or at least three layers of a perforated sheet.

[0029] A meander-perforated plate, for example, contains pores that are not straight but curved. In this case, gas can pass through the pores of the meander-perforated plate, while the plate itself is opaque to electromagnetic radiation.

[0030] An inverse opal layer, for example, comprises a regular arrangement of spherical cavities surrounded by solid walls. The inverse opal layer is produced, for example, by the self-assembly of a sacrificial material such as polystyrene spheres, the deposition of a metal such as nickel or copper in the cavities between the sacrificial material, and the removal of the sacrificial material, leaving behind a three-dimensionally ordered porous solid.

[0031] The foamed plastic layer comprises, for example, a plastic material with gas-permeable pores. The plastic material can be a thermoplastic resin such as polycyclohexylenedimethyl terephthalate (PCT), polybutylene terephthalate (PBT), or polyphthalamide (PPA), or a thermosetting resin such as epoxy. Thermoplastic and thermosetting resins are advantageously stable at the temperatures required for SMT mounting of the optoelectronic device, for example, 260 °C for SMT mounting with SnAgCu. The foamed plastic layer can be produced by foam injection molding, creating a foam structure that encompasses the pores. In particular, the foam structure is present on all sides and is intrinsic.The pores can be created through physical methods, such as introducing gas cavities into liquid plastic, or through chemical methods, such as generating gas at elevated temperatures via a chemical reaction within the plastic material. Sodium carbonate is one example of a substance used in these chemical processes.

[0032] For example, the at least three layers of a perforated sheet are arranged such that openings in one layer partially overlap with openings in directly adjacent layers, but there is no overlap of openings in three directly adjacent layers. For instance, openings in the first layer overlap with openings in the second layer, and openings in the second layer overlap with openings in the third layer, but openings in the second layer do not simultaneously overlap with openings in the first and third layers. This allows gas to pass through the cover, while electromagnetic radiation cannot. The cover can, for example, comprise more than three layers of a perforated sheet, such as four or five layers. In particular, the at least three layers of the perforated sheet are joined together by gluing, soldering, or sintering.In these cases, an adhesive, solder, or sintering material is applied to the perforated sheets, which is then used to bond the layers together, for example, by applying an elevated temperature. Alternatively, tinned sheets can be used, eliminating the need for additional adhesive, solder, or sintering material. The perforated sheets can also be joined by welding, particularly spot welding, such as laser spot welding or electrode spot welding. In this case, the layer can be spot-welded at every tenth point where all layers are present.

[0033] According to at least one embodiment, the detector unit comprises an integrated circuit. The integrated circuit is configured, in particular, for controlling the optoelectronic component, especially the radiation-emitting element, for processing the measurement signal and the reference signal, and for outputting a measurement result. The signal processing can include analyzing the measurement signal and the reference signal and determining the measurement result. The integrated circuit is, in particular, a monolithic integrated circuit. The integrated circuit is, for example, an application-specific integrated circuit (ASIC). For instance, the first photodetector area and the second photodetector area are both arranged on a single surface of the integrated circuit.An integrated circuit can advantageously combine optical measurement and signal processing in a single compact optoelectronic component. The use of a cost-effective and standardized integrated circuit facilitates the integration of the optoelectronic component into a control system, such as a heating system.

[0034] According to at least one embodiment, the measuring range and / or the reference range are arranged on at least one side of the reflection prism. In particular, the measuring range and / or the reference range are arranged in direct contact with the reflection prism. For example, the reflection prism is configured as a support for the measuring range and / or the reference range. The reflection prism is, for example, opaque to the gas. By using a reflection prism as a support for the measuring range and the reference range, additional supports such as plates can advantageously be omitted. Thus, the optoelectronic component can be provided cost-effectively.

[0035] According to at least one embodiment, the measuring range and / or the reference range comprises a measuring stack and a protective layer. The measuring stack is arranged between the reflection prism and the protective layer. In particular, the reflection prism, the measuring stack, and the protective layer are arranged such that the reflection prism and the protective layer are in direct mechanical contact in a region that laterally surrounds the measuring stack. The measuring stack is thus surrounded on all sides by the reflection prism and the protective layer.

[0036] In particular, the measuring stack is designed to interact with the gas. For example, gas molecules bind to the material of the measuring stack and / or react chemically with it. The binding and / or chemical reaction can cause a change in the transmission of electromagnetic radiation through the measuring range of the measuring unit. The measuring stack comprises, in particular, a metal or a metal alloy, or consists thereof. The measuring stack comprises, for example, a magnesium alloy such as a Pd-coated Mg 82 Ti 18 -alloy, a Mg 82 Zr 18 -alloy, a Pd-coated Y 50 Mg 50 -alloy, a tantalum-palladium alloy such as Ta 0,9 Pd 0,1 or a palladium-gold-copper alloy such as Pd 0,6 Au 0,35 Cu 0,05or consists of it. In the case that the gas is hydrogen, hydrogen reacts with a metal present in the measuring stack, forming metal hydrides. The metal hydrides can absorb some of the electromagnetic radiation from the first beam path, thereby altering, for example, the intensity of the measurement signal. In particular, the formation of metal hydrides changes the transparency of the measuring range depending on the amount of hydrogen gas present in the optoelectronic component.

[0037] In particular, the measurement stack comprises at least one measurement layer. The measurement stack may, for example, comprise one measurement layer, two measurement layers, or more than two measurement layers. Here and in the following, measurement layers are understood to be layers of the measurement stack, in particular metal layers or metal alloy layers, without protective layers. It is possible that not all materials suitable for the measurement stack will adhere equally well to each other and / or to the reflection prism and / or the protective layer. By using at least one measurement layer in the measurement stack, the adhesion of the components and layers of the measuring unit can be advantageously improved and tailored to specific applications.

[0038] For example, the measuring stack comprises at least a first measuring layer and a second measuring layer located between the first measuring layer and the protective layer. The first measuring layer and the second measuring layer comprise, for example, a metal or a metal alloy, or consist of such a metal. The metal alloy is, for example, a tantalum-palladium alloy such as Ta 0,9 Pd 0,1 or a palladium-gold-copper alloy such as Pd 0,6 Au 0,35 Cu 0,05 A measuring stack that includes a first measuring layer made of a tantalum-palladium alloy such as Ta 0,9 Pd 0,1 and a second measuring layer made of a palladium-gold-copper alloy such as Pd 0,6 Au 0,35 Cu 0,05 It is advantageously suitable for detecting hydrogen gas.

[0039] In particular, the protective layer is designed to protect the measuring stack from damage. For example, the protective layer is permeable to gas, especially hydrogen. Thus, during operation of the optoelectronic component, the measuring area comes into contact with the gas. The gas can penetrate the protective layer to reach the measuring stack within the measuring area. The gas can interact with the measuring stack and generate a measurement signal in the first photodetector area. The protective layer comprises, for example, polytetrafluoroethylene (PTFE). PTFE can advantageously offer improved gas selectivity for hydrogen gas.

[0040] According to at least one embodiment, the reference area further comprises a gas-impermeable layer. The gas-impermeable layer is arranged between the measuring stack and the protective layer. In other words, the reference area comprises the measuring stack, the gas-impermeable layer, and the protective layer in that order. The gas-impermeable layer comprises, for example, silicon dioxide (SiO2) or consists thereof.

[0041] In particular, the gas-impermeable layer is designed such that the gas penetrates it significantly more slowly than the protective layer. It should be noted that the gas-impermeable layer need not be completely impermeable to the gas. However, gas transport through the gas-impermeable layer is very slow compared to all layers described herein as gas-permeable. For example, the reflection prism, the measuring stack, and the gas-impermeable layer are arranged such that the reflection prism and the gas-impermeable layer are in direct mechanical contact in an area that laterally surrounds the measuring stack. Thus, the measuring stack is surrounded on all sides by the reflection prism and the gas-impermeable layer. During operation of the optoelectronic device, the reference area comes into contact with the gas.Due to the gas-impermeable layer, the gas cannot penetrate the layer or the reflection prism upon initial contact with the reference area. Therefore, the gas cannot reach the measurement stack in the reference area at the same time as the gas reaches the measurement stack in the measurement area. Consequently, when the gas first comes into contact with the measuring unit, the measurement signal differs from the reference signal, and the optoelectronic device registers a measurement result indicating the presence of the gas. A reference area with a gas-impermeable layer advantageously enables reference measurements and thus improves the signal-to-noise ratio.

[0042] In particular, the reference area differs from the measurement area only when the gas-impermeable layer is present. Thus, the electromagnetic radiation passes through a similar stack of layers along both the first and second beam paths. This advantageously allows for a more accurate measurement result.

[0043] According to at least one embodiment, the reflection prism comprises a transmissive side, a first reflective side, and a second reflective side. In particular, the electromagnetic radiation enters the reflection prism through the transmissive side, is at least partially reflected at the first reflective side, then at least partially reflected at the second reflective side, and exits the reflection prism through the transmissive side.

[0044] According to at least one embodiment, the transmissive side is located on the side of the reflection prism facing the radiation-emitting element and the detector unit. Thus, the electromagnetic radiation emitted by the radiation-emitting element can advantageously and efficiently enter the reflection prism.

[0045] According to at least one embodiment, the first reflective side is located on a side of the reflection prism that is facing away from the radiation-emitting element and the detector unit, and the first reflective side is arranged above the radiation-emitting element.

[0046] According to at least one embodiment, the second reflective side is located on a side of the reflection prism that is facing away from the radiation-emitting element and the detector unit, and the second reflective side is arranged above the detector unit.

[0047] According to at least one embodiment, the measuring range and / or the reference range is arranged on the transmissive side of the reflection prism. Advantageously, the measuring range and / or the reference range can be easily arranged on the transmissive side of the reflection prism.

[0048] In particular, the measuring area and / or the reference area covers only a portion of the transmissive side, so that the electromagnetic radiation emitted by the radiation-emitting element passes through the measuring area and / or the reference area only once. For example, the measuring area and / or the reference area is located on a portion of the transmissive side facing the radiation-emitting element or on a portion of the transmissive side facing the detector unit. Since the beam paths transmitted through the measuring area and / or the reference area may involve increased radiation loss, it is advantageous to implement beam paths with only one transmission without increasing the power of the radiation-emitting element.

[0049] Alternatively, the measuring area and / or the reference area can completely cover the transmissive side. In this case, the electromagnetic radiation emitted by the radiation-emitting element is transmitted twice through the measuring area and / or the reference area. A beam path with two transmissions through the measuring area and / or the reference area may require a higher power output from the radiation-emitting element. However, completely covering the transmissive side can advantageously increase the sensitivity of the optoelectronic device.

[0050] According to at least one embodiment, the measuring range and / or the reference range is arranged at least on the first reflective side or the second reflective side. In particular, the measuring range and / or the reference range completely covers the first reflective side or the second reflective side. By arranging the measuring range and / or the reference range on a reflective side of the reflecting prism, the properties of the reflective side can be modified such that reflection of the electromagnetic radiation at the reflective side is not total internal reflection. Instead, at least a portion of the electromagnetic radiation can penetrate the reflective side and enter the measuring range and / or the reference range on the reflective side. The electromagnetic radiation can then be at least partially reflected within the measuring range and / or the reference range.In particular, the reflective side, which is not covered by the measuring area and / or the reference area, is free of the measuring unit. In this case, the electromagnetic radiation is reflected at this reflective side. Since the measuring area and / or the reference area can reflect a large portion of the electromagnetic radiation entering the measuring area and / or the reference area, the power consumption of the optoelectronic component can advantageously be reduced and its sensitivity increased.

[0051] According to at least one embodiment, the measuring area and / or the reference area is arranged on the first and second reflective sides. In particular, the first and second reflective sides are completely covered by the measuring area and / or the reference area. By arranging the measuring area and / or the reference area on the first and second reflective sides, the sensitivity of the optoelectronic component can advantageously be increased.

[0052] According to at least one embodiment, the measuring area and / or the reference area is arranged on the transmissive side, the first reflective side, and the second reflective side. In particular, all rectangular sides of the reflection prism are covered, especially completely, by the measuring area and / or the reference area. In this case, the electromagnetic radiation paths are both transmissive and reflective. Transmissive and reflective radiation paths can increase the power consumption of the radiation-emitting element of the electronic component. However, arranging the measuring area and / or the reference area on the transmissive side, the first reflective side, and the second reflective side can advantageously result in a very sensitive optoelectronic component.

[0053] According to at least one embodiment, the first beam path and the second beam path are reflective. In particular, electromagnetic radiation is used to measure the measurement signal and the reference signal, and this radiation is reflected as it passes through the first or second beam path, respectively. For example, the electromagnetic radiation is reflected within the measuring unit, specifically within the measuring range or the reference range. For example, at least 80%, and in particular at least 90%, of the electromagnetic radiation entering the measuring unit is reflected within the measuring unit.

[0054] In particular, the first beam path is configured such that the electromagnetic radiation enters the measuring area from a side facing the radiation-emitting element, is at least partially reflected within the measuring area, and exits the measuring area again on the side facing the radiation-emitting element. In other words, the measurement of the signal is performed by reflection.

[0055] In particular, the second beam path is configured such that the electromagnetic radiation enters the reference region from a side facing the radiation-emitting element, is at least partially reflected within the reference region, and exits the reference region on the side facing the radiation-emitting element. In other words, the reference signal is measured by reflection.

[0056] In particular, the reflection of electromagnetic radiation is specular or diffuse. Specular reflection can be achieved by a smooth or smoothed surface. Diffuse reflection can be achieved by a rough or roughened surface. The smooth or smoothed surface, or the rough or roughened surface, can accordingly be part of the measuring unit, in particular the measuring range or the reference range.

[0057] Since the measuring unit can reflect a large portion of the electromagnetic radiation entering the measuring unit, such as at least 80%, the power consumption of the optoelectronic component can be advantageously reduced and the sensitivity of the optoelectronic component can be increased by using reflective beam paths.

[0058] According to at least one embodiment, the first and second beam paths are transmissive. In this case, the measuring range and / or the reference range is located on the transmissive side of the reflection prism. The first and second beam paths can be configured such that the electromagnetic radiation passes through the measuring range and / or the reference range, in particular the measuring unit, only once or only twice. In other words, the measurement of the measuring signal and / or the measurement of the reference signal is performed in transmission. By arranging the measuring unit in the beam paths between the radiation-emitting element and the detector unit, the measurements of the measuring signal and the reference signal are performed in transmission, thus employing a straightforward and therefore reliable method.

[0059] According to at least one embodiment, the first and second beam paths are reflective and transmissive, respectively. In this case, the measuring area and / or the reference area is located on the transmissive side and on at least one of the first and second reflective sides. In particular, all rectangular faces of the reflection prism are covered by the measuring area and / or the reference area. The presence of reflective and transmissive beam paths can advantageously result in a highly sensitive optoelectronic device.

[0060] According to at least one embodiment, the measuring area and the reference area are arranged directly adjacent to each other. In particular, the measuring area and the reference area are arranged on the same reflecting prism. The measuring stack can be configured as a two-part measuring stack, with the two parts arranged directly next to each other on the same reflecting prism. One of the two parts can form the measuring area and the other part the reference area. The protective layer can also be configured as a two-part protective layer or as a single protective layer covering both parts of the two-part measuring stack. The reference area further comprises the gas-impermeable layer. The first photodetector area and the second photodetector area can also be arranged adjacent to each other.To ensure optical separation of the first and second beam paths and to increase the sensitivity of the optoelectronic component, the first and second photodetector areas can be spaced apart within the detector unit. For example, the first and second photodetector areas can be arranged on the integrated circuit, with a portion of the integrated circuit between the first and second photodetector areas free of a photodetector area. Alternatively, the first and second beam paths can be parallel to each other. A measuring unit in which the measuring area and the reference area are directly adjacent can advantageously be manufactured and assembled simply and cost-effectively.

[0061] According to at least one embodiment, the optoelectronic component comprises a further reflection prism. In particular, the further reflection prism has the same properties and configurations as the reflection prism. Features and configurations described in connection with the reflection prism also apply to the further reflection prism and vice versa. For example, the further reflection prism can be arranged parallel to the reflection prism. For example, the triangular side faces of the reflection prism and the further reflection prism are parallel to each other. The reflection prism and the further reflection prism can be arranged congruently. Thus, in a top view of the triangular side faces, the reflection prism and the further reflection prism overlap, in particular completely.Alternatively, the second reflection prism can be shifted relative to the first reflection prism in the direction of the substrate's main extension. In this case, the first reflection prism and the second reflection prism overlap only partially in a top view of the triangular side faces, for example, at a point above the radiation-emitting element. The detector unit can be configured as a two-part unit, and the radiation-emitting element can be positioned between the two parts of the detector unit. According to at least one embodiment, the measuring area is located on the first reflection prism, and the reference area is located on the second reflection prism. In particular, the measuring area and the reference area are spatially separated from each other.By arranging the measuring area and the reference area on different reflection prisms, an optical separation of the first beam path and the second beam path can advantageously be ensured, thus guaranteeing a precise and reliable measurement.

[0062] According to at least one embodiment, the reflection prism and the further reflection prism are optically separated. For example, the reflection prism and the further reflection prism are arranged parallel and congruent to each other. To optically separate the reflection prism and the further reflection prism, the prisms can be spaced apart. A distance between the reflection prism and a further reflection prism can advantageously optically separate the first and second beam paths. Alternatively, the reflection prism and a further reflection prism can be optically separated by an adhesive designed to absorb the electromagnetic radiation emitted by the radiation-emitting element. The adhesive, in particular, covers the triangular faces of the reflection prism and the further reflection prism facing each other. The adhesive is, for example, a black adhesive.The optical separation of the reflection prisms allows for the advantageously simple and cost-effective separation of the beam paths for generating the measurement signal and the reference signal. This ensures precise and reliable measurements. Furthermore, crosstalk between the measurement signal and the reference signal can be reduced or prevented.

[0063] According to at least one embodiment, at least one reflective layer is arranged on at least one triangular side of the reflection prism and / or the further reflection prism. The reflective layer is configured, in particular, to reflect the electromagnetic radiation emitted by the radiation-emitting element. For example, both triangular sides of the reflection prism and / or the further reflection prism are, in particular, completely covered by a reflective layer. For example, the opposing triangular sides of the reflection prism and the further reflection prism are covered with a reflective layer and bonded together by means of an adhesive.A mirror layer on a triangular side of the reflection prism and / or the further reflection prism can advantageously increase optical separation of the first beam path and the second beam path, ensure precise and reliable measurement, reduce radiation losses through coupling out via the triangular side and / or absorption, and increase the sensitivity and accuracy of the optoelectronic device.

[0064] According to at least one embodiment, the reflection prism is mounted on the radiation-emitting element and the detector unit. For example, the reflection prism is mounted on the radiation-emitting element and the detector unit using a transparent adhesive. Mounting the reflection prism directly on the radiation-emitting element and the detector unit advantageously eliminates the need for a separate holder for the reflection prism and thus for the measuring unit, and improves the coupling of the electromagnetic radiation into the reflection prism.

[0065] According to at least one embodiment, the radiation-emitting element and the detector unit are mounted on the substrate. In particular, the first photodetector area and / or the second photodetector area in the detector unit are arranged on a side of the detector unit facing away from the substrate. For example, the integrated circuit of the detector unit is mounted on the substrate, and the first photodetector area and the second photodetector area are arranged on a side of the integrated circuit facing away from the substrate. By mounting the radiation-emitting element and the detector unit on the substrate, electrical contacts can advantageously be easily made through the substrate, and the optoelectronic component can advantageously be provided simply and cost-effectively.

[0066] According to at least one embodiment, the radiation-emitting element comprises or is a micro-LED. It is also possible that the radiation-emitting element comprises or is a mini-LED. In the broadest sense, a micro-LED can be considered any light-emitting diode (LED) of a particularly small size. Micro-LEDs can have a width, length, thickness, and / or diameter of less than or equal to 100 micrometers, in particular less than or equal to 70 micrometers, for example, less than or equal to 50 micrometers. In particular, micro-LEDs, for example rectangular micro-LEDs, have an edge length, especially in a top view of the layers of the semiconductor layer sequence, of a luminescent area of ​​less than or equal to 70 micrometers, for example, less than or equal to 50 micrometers.A micro-LED, for example, is a light-emitting diode with the growth substrate removed, resulting in a thickness of between, for example, 1.5 and 10 micrometers. The micro-LED is mounted on a wafer using removable support structures. The micro-LED can be removed from the wafer without damage.

[0067] Micro-LEDs are used primarily in optoelectronic components to generate electromagnetic radiation, depending on the application. These micro-LEDs can form pixels or subpixels and emit electromagnetic radiation of a specific color, wavelength, or wavelength range. Due to their small pixel size and high density with close spacing, micro-LEDs are suitable for optoelectronic components such as gas sensors for consumer applications, industrial applications, and automotive applications, for example, in fuel cells.

[0068] Advantageous embodiments and further developments of the optoelectronic component for detecting a gas will become apparent from the exemplary embodiments described below in conjunction with the figures.

[0069] In the characters: The Fig. 1A, Fig. 3, Fig. 5, Fig. 8A and Fig. Figures 9C each show a schematic side sectional view of an optoelectronic component for detecting a gas according to various embodiments. The Fig. Figures 1B, 7A to 7D, 8B, 9A and 9B each show a schematic top view of an optoelectronic component according to different embodiments. The Fig. Figures 2A, 4A to 4C and 6A to 6C each show a schematic representation of a measuring unit according to an exemplary embodiment. The Fig. Figures 2B to 2D each show a schematic side sectional view of a measuring unit according to various embodiments.

[0070] In the exemplary embodiments and figures, identical or similarly functioning components are designated with the same reference numerals. The elements depicted in the figures and their relative sizes are not to be considered to scale. Rather, individual elements may be exaggerated for clarity and / or better understanding.

[0071] The optoelectronic component 1 of the in the Fig. 1A and Fig. The embodiment shown in 1B is for detecting a gas, for example hydrogen (H2) or ammonia (NH3) or a pollutant gas such as SO₂. x or NO x , furnished.

[0072] The optoelectronic component 1 is surface-mountable. The optoelectronic component 1 comprises a substrate 2, in particular an SMT substrate, and a housing 3, in particular an injection-molded housing. Electrical connection pads 21 of the optoelectronic component 1 are arranged exclusively on a side of the substrate 2 facing away from the housing 3. The housing 3 comprises a gas inlet 31, which is covered by a cover 32. The cover 32 can comprise a meander-perforated plate, an inverse opal layer, a foamed plastic layer, or at least three layers of a perforated sheet. In the exemplary embodiment of the Fig. 1. The gas inlet 31 is arranged in a side of the housing 3 opposite the substrate 2. Alternatively, the gas inlet 31 can also be arranged in a different side of the housing 3 than the side opposite the substrate 2. Both the housing 3 and the cover 32 can be opaque to electromagnetic radiation, in particular at least to electromagnetic radiation 10 emitted by a radiation-emitting element 4 of the optoelectronic component 1.

[0073] The substrate 2 and the housing 3 surround a volume 7. Within the volume 7 are arranged a radiation-emitting element 4, a measuring unit 5, a detector unit 6, and a reflection prism 8. The radiation-emitting element 4 and the detector unit 6 are mounted on the substrate 2 and electrically connected through it. The reflection prism 8 is mounted on the radiation-emitting element 4 and the detector unit 6.

[0074] The radiation-emitting element 4 is configured to emit electromagnetic radiation, in particular electromagnetic radiation in the ultraviolet wavelength range, in the visible wavelength range and / or in the infrared wavelength range, for example in the infrared wavelength range. The electromagnetic radiation is emitted from the radiation-emitting surface 41.

[0075] The detector unit 6 can comprise an integrated circuit 63. On a side of the detector unit 6, in particular the integrated circuit 63, facing away from the substrate 2, a first photodetector region 61 and a second photodetector region 62 are arranged side by side. The first photodetector region 61 comprises, for example, a first photodiode, and the second photodetector region 62 comprises or comprises a second photodiode. Alternatively, the first photodetector region 61 can be the first part of a two-part photodiode, and the second photodetector region 62 can be the second part of the two-part photodiode.

[0076] The reflection prism 8 is a triangular prism, in particular an isosceles right-angled triangular reflection prism 8. The reflection prism 8 comprises a transmissive side 81, a first reflecting side 82, and a second reflecting side 83. The transmissive side 81 is located on the side of the reflection prism 8 facing the radiation-emitting element 4 and the detector unit 6. The first reflecting side 82 is located on a side of the reflection prism 8 facing away from the radiation-emitting element 4 and the detector unit 6 and is positioned above the radiation-emitting element 4. The second reflecting side 83 is located on a side of the reflection prism 8 facing away from the radiation-emitting element 4 and the detector unit 6 and is positioned above the detector unit 6.

[0077] The measuring unit 5 is mounted on the first reflective side 82 and the second reflective side 83. The measuring unit 5 comprises a measuring stack 53. The measuring unit 5 is divided into a measuring area 51 and a reference area 52. The measuring area 51 is arranged in a first electromagnetic radiation path between the radiation-emitting element 4 and the first photodetector area 61, and the reference area 52 is arranged in a second electromagnetic radiation path between the radiation-emitting element 4 and the second photodetector area 62. In other words, the measuring area 51 in the exemplary embodiment of the Fig. 1A and Fig. The first photodetector area 61 is located above the radiation-emitting element 4 and the first photodetector area 61, and the reference area 52 is located above the radiation-emitting element 4 and the second photodetector area 62. Both the first and second beam paths are reflective. Thus, the measurement of a measurement signal via the first beam path and the measurement of a reference signal via the second beam path are performed by reflection, since the electromagnetic radiation from the radiation-emitting element 4 is reflected at least partially within the measurement area 51 and the reference area 52 before reaching the first photodetector area 61 or the second photodetector area 62, respectively.

[0078] During operation of the optoelectronic component 1, the gas enters volume 7 through the gas inlet 31 and comes into contact with the measuring unit 5. The gas interacts with the measuring stack 53 in measuring area 51 of the measuring unit 5. For example, the gas can bind to a material of the measuring stack 53 in measuring area 51 and / or react chemically with it. This modifies a property of the electromagnetic radiation of the first beam path, which is reflected in measuring area 51. Thus, a measurement signal detected at the first photodetector area 61 is altered by the presence of the gas in volume 7. In the reference area 52, the gas does not interact with the measuring stack 53. Therefore, a reference signal detected at the second photodetector area 62 remains unchanged by the presence of the gas in volume 7.By comparing the measurement signal with the reference signal, a measurement result can be determined that indicates the presence of the gas as well as a concentration of the gas based on the determined difference between the measurement signal and the reference signal.

[0079] The measuring unit 5 of the in Fig. The embodiment shown in 2A essentially corresponds to the one described in the Fig. 1A and Fig. 1B shown measuring unit 5. The measuring unit 5 comprises a measuring range 51 and a reference range 52. The measuring range 51 and the reference range 52 are arranged adjacent to each other on the first reflecting side 82 and the second reflecting side 83 of the reflection prism 8.

[0080] Fig. Figure 2B shows a schematic side sectional view of a measuring unit 5 from Fig. 2A. In the dashed circle labeled A (hereinafter referred to as Detail A) shows Fig. 2B, that part of the side of the reflection prism 8, which laterally surrounds the measurement stack 53, is free from the measurement stack 53.

[0081] The Fig. 2C and Fig. 2D images each show a schematic side sectional view of the [object]. Fig. Details shown in 2B A Fig. 2C shows a measuring range of 51, while Fig. 2D shows a reference area 52 of the measuring unit 5.

[0082] The measuring range 51 of the in Fig. The embodiment shown in Figure 2C comprises a measuring stack 53 and a protective layer 54. The measuring stack 53 is arranged between the reflection prism 8 and the protective layer 54. In the embodiment of Fig. In 2C, the measuring stack 53 comprises a first measuring layer 531 and a second measuring layer 532, which is arranged between the first measuring layer 531 and the protective layer 54. The first measuring layer 531 and the second measuring layer 532 comprise or consist of a metal or a metal alloy. The first measuring layer 531, for example, comprises a tantalum-palladium alloy such as Ta 0,9 Pd 0,1 or consists of it and the second measuring layer 532 comprises a palladium-gold-copper alloy such as Pd 0,6 Au 0,35 Cu 0,05or consists of it. Such a measuring stack 53 is, for example, designed to detect hydrogen gas. The protective layer 54 is arranged on the measuring stack 53 such that it has direct contact with the reflection prism 8 in a region of the reflection prism 8 that is free of the measuring stack 53. Thus, the protective layer 54 and the reflection prism 8 enclose the measuring stack 53 on all sides. The protective layer 54 is permeable to the gas, so that the gas can penetrate the protective layer 54 and come into contact with the measuring stack 53 in the measuring area 51. The protective layer 54 comprises, for example, polytetrafluoroethylene (PTFE) or consists of it.

[0083] In contrast to the one in Fig. The measurement range 51 shown in 2C comprises the reference range 52 of the Fig. In the embodiment shown in Figure 2D, a gas-impermeable layer 55 is further shown, which is arranged between the measuring stack 53 and the protective layer 54. The gas-impermeable layer 55 is arranged on the measuring stack 53 such that it has direct contact with the reflection prism 8 in the area of ​​the reflection prism 8 free from the measuring stack 53. Thus, the gas-impermeable layer 55 and the reflection prism 8 surround the measuring stack 53 on all sides and thus prevent the gas from reaching the measuring stack 53 in the reference area 52. The gas-impermeable layer 55 comprises or consists, for example, of silicon dioxide (SiO2).

[0084] The optoelectronic component 1 of the in Fig. The embodiment shown in section 3 essentially corresponds to that described in the Fig. 1A and Fig. The optoelectronic component 1 shown in Figure 1B. In contrast, the optoelectronic component 1 of Fig. 3 The measuring unit 5 is arranged on the transmissive side 81 of the reflection prism 8. Both the first and the second beam paths are transmissive. Thus, the measurement of a measurement signal via the first beam path and the measurement of a reference signal via the second beam path are performed in transmission, since the electromagnetic radiation of the radiation-emitting element 4 is at least partially transmitted through the measuring area 51 and the reference area 52 before reaching the first photodetector area 61 or the second photodetector area 62, respectively.

[0085] The Fig. Figures 4A to 4C show various embodiments of the measuring unit 5, as used in conjunction with the Fig. 3 shown.

[0086] In the exemplary embodiment of the Fig. 4A The transmissive side 81 of the reflection prism 8 is completely covered by the measuring area 51 and the reference area 52. The measuring area 51 and the reference area 52 are arranged adjacent to each other.

[0087] In the exemplary embodiment of the Fig. 4B only covers a portion of the transmissive side 81 of the reflection prism 8 through the measuring area 51 and the reference area 52. The measuring area 51 and the reference area 52 are arranged adjacent to each other. In the exemplary embodiment of the Fig. 3 is the part covered by the measuring area 51 and the reference area 52 arranged above the radiation-emitting element 4 and a part of the reflection prism free from the measuring area 51 and the reference area 52 is arranged above the detector unit 6.

[0088] In the exemplary embodiment of the Fig. 4C only covers a portion of the transmissive side 81 of the reflection prism 8 of the measuring area 51 and the reference area 52. The measuring area 51 and the reference area 52 are arranged adjacent to each other. In the exemplary embodiment of the Fig. 3 is the part above the detector unit 6 covered by the measuring area 51 and the reference area 52, and a part of the reflection prism above the radiation-emitting element 4 free from the measuring area 51 and the reference area 52.

[0089] The optoelectronic component 1 of the in Fig. The embodiment shown in section 5 essentially corresponds to the embodiment shown in Fig. 1A and Fig. 1B as well as in Fig. 3 shown optoelectronic components 1. In contrast, in optoelectronic component 1 the Fig. The measuring unit 5 is arranged on the transmissive side 81, the first reflective side 82, and the second reflective side 83 of the reflection prism 8. In other words, all rectangular faces of the reflection prism 8 are covered by the measuring unit 5. Both the first and second beam paths are transmissive and reflective.

[0090] The Fig. Figures 6A to 6C show an embodiment of the measuring unit 5, as used in conjunction with Fig. 5 shown. Fig. 6A shows a view of the transmissive side 81, Fig. Figure 6B shows a view of the first reflective side 82, and Fig. Figure 6C shows a view of the second reflective side 83. Sides 81, 82, and 83 are completely covered by the measuring area 51 and the reference area 52. The measuring area 51 and the reference area 52 are arranged adjacent to each other on all sides 81, 82, and 83.

[0091] The optoelectronic component 1 of the in Fig. The embodiment shown in 7A essentially corresponds to that described in conjunction with the Fig. 1A and Fig. 1B shown optoelectronic component 1. In contrast, the embodiment of the Fig. 7A a further reflection prism 9. The measuring area 51 is arranged on the reflection prism 8 and the reference area 52 is arranged on the further reflection prism 9. Therefore, the reflection prism 8 is arranged on the radiation-emitting element 4 and the first photodetector area 61, and the further reflection prism 9 is arranged on the radiation-emitting element 4 and the second photodetector area 62. The reflection prism 8 and the further reflection prism 9 are arranged next to each other such that they are parallel and coincident. The reflection prism 8 and the further reflection prism 9 are spaced apart from each other to optically separate the reflection prism 8 and the further reflection prism 9.

[0092] The optoelectronic component 1 of the in Fig. The embodiment shown in 7B essentially corresponds to that described in conjunction with Fig. The optoelectronic component 1 shown in Figure 7A. In contrast, the reflection prism 8 and the further reflection prism 9 are optically separated by an adhesive 10, which is absorbent for the electromagnetic radiation emitted by the radiation-emitting element 4. The adhesive 10 is arranged on the facing triangular side faces of the reflection prism 8 and the further reflection prism 9 and connects them to each other.

[0093] The optoelectronic component 1 of the in Fig. The embodiment shown in 7C essentially corresponds to that described in conjunction with Fig. Figure 7A shows the optoelectronic component 1. Additionally, a mirror layer 11 is arranged on each of the triangular side faces of the reflection prism 8 and the further reflection prism 9. The mirror layers 11 are designed to reflect electromagnetic radiation emitted by the radiation-emitting element 4. Thus, the mirror layers optically separate the reflection prism 8 and the further reflection prism 9 and can prevent radiation losses.

[0094] The optoelectronic component 1 of the in Fig. The embodiment shown in 7D essentially corresponds to that described in conjunction with Fig. The optoelectronic component 1 shown in Figure 7B. In addition, a mirror layer 11 is arranged on each triangular side face of the reflection prism 8 and the further reflection prism 9, as described in connection with the Fig. 7C described. In addition, the reflection prism 8 and the further reflection prism 9 are connected to each other with the adhesive 10.

[0095] The optoelectronic component 1 of the in the Fig. 8A and Fig. The embodiment shown in 8B essentially corresponds to that described in conjunction with Fig. The optoelectronic component 1 shown in Figure 7A is shown in Figure 7A. In contrast, the reflection prism 8 and the further reflection prism 9 are parallel and offset from each other. Furthermore, the detector unit 6 is designed as a two-part detector unit. One part of the detector unit 6, comprising the first photodetector area 61, is arranged on one side of the radiation-emitting element 4, and the other part of the detector unit 6, comprising the second photodetector area 62, is arranged on the other side of the radiation-emitting element 4. The reflection prism 8, on which the measuring area 51 is mounted, is arranged on the radiation-emitting element 4 and the first photodetector area 61, and the further reflection prism 9, on which the reference area 52 is mounted, is arranged on the radiation-emitting element 4 and the second photodetector area 62.

[0096] The optoelectronic component 1 of the in the Fig. The embodiment shown in 9A to 9C essentially corresponds to that shown in conjunction with the Fig. 1A and Fig. 1B shown optoelectronic component 1. Fig. Figure 9A shows a top view of the optoelectronic component 1 without the housing 3. Fig. Figure 9B shows a top view of the optoelectronic component 1 with the housing 3, and Fig. Figure 9C shows a side sectional view of Fig. 9B.

[0097] The housing is designed as a conformal coating of the radiation-emitting element 4, the measuring unit 5, the detector unit 6, and the reflection prism 8. The housing 3 comprises two cavities 33 on one side of the housing facing away from the substrate 2. A layer 34 made of the housing 3 material remains between the cavities 33 and the measuring unit 5 of the optoelectronic component 1. The housing 3 material, particularly the layer 34 between the cavities 33 in the measuring unit 5, is gas-permeable. The cavities 33 and the layers 34 of the housing 3 material form the gas inlet 31 of the housing 3. The gas can enter the cavities 33 from the outside and diffuse through the layer 34 of the housing 3 material into the measuring unit 5.

[0098] The features and embodiments described in connection with the figures can be combined with one another according to further embodiments, even if not all combinations are explicitly described. Furthermore, the embodiments described in connection with the figures may have alternative or additional features, as described in the general section.

[0099] This patent application claims priority over German patent application 10 2024 100 851.2, the disclosure content of which is hereby incorporated by reference.

[0100] The invention is not limited to the exemplary embodiments described by reference to them. Rather, the invention encompasses every new feature and every combination of features, including in particular every combination of features in the claims and every combination of features in the exemplary embodiments, even if that feature or combination itself is not expressly specified in the claims or exemplary embodiments. Reference sign 1 optoelectronic component 2 Substrat 21 electrical connection area 3 cases 31 Gas inlet 32 Cover 33 Cavity 34 layers 4 radiation-emitting element 41 Radiation emission surface 5 Unit of measurement 51 Measuring range 52 Reference range 53 measuring stacks 531 first measuring layer 532 second measuring layer 54 Protective layer 55 gas-impermeable layer 6 Detector unit 61 first photodiode 62 second photodiode 63 integrated circuit 7 volumes 8 Reflection prism 81 transmissive side 82 first reflective page 83 second reflective side 9 further reflection prisms 91 transmissive side 92 first reflective page 93 second reflective side 10 Adhesive 11 Mirror layer QUOTES INCLUDED IN THE DESCRIPTION

[0000] This list of documents cited by the applicant was automatically generated and is included solely for the reader's convenience. The list is not part of the German patent or utility model application. The DPMA accepts no liability for any errors or omissions. Cited patent literature

[0000] DE 10 2024 100 851.2

[0099]

Claims

Optoelectronic device (1) for detecting a gas, comprising: - a radiation-emitting element (4) configured to emit electromagnetic radiation, - a measuring unit (5) comprising a measuring range (51) and a reference range (52), - a detector unit (6) comprising at least a first photodetector range (61) and a second photodetector range (62), and - a reflection prism (8), wherein the reflection prism (8) is arranged on the radiation-emitting element (4) and the detector unit (6), wherein the measuring range (51) is arranged in a first beam path of the electromagnetic radiation between the radiation-emitting element (4) and the first photodetector range (61), wherein the reference range (52) is arranged in a second beam path of the electromagnetic radiation between the radiation-emitting element (4) and the second photodetector range (62).wherein the optoelectronic component (1) is surface-mountable, and wherein the measuring range (51) is configured to interact with the gas (9). The optoelectronic component (1) according to the preceding claim, further comprising a substrate (2), wherein electrical connection surfaces (21) of the optoelectronic component (1) are arranged exclusively on a side of the substrate (2) facing away from the radiation-emitting element (4), the measuring unit (5), the detector unit (6) and the reflection prism (8). Optoelectronic component (1) according to at least one of the preceding claims, wherein the gas is hydrogen. Optoelectronic component (1) according to at least one of the preceding claims, further comprising a housing (3), wherein the substrate (2) and the housing (3) surround a volume (7), wherein the radiation-emitting element (4), the measuring unit (5), the detector unit (6) and the reflection prism (8) are arranged in the volume (7). Optoelectronic component (1) according to at least one of the preceding claims, wherein the housing (3) comprises a gas inlet (31), and wherein the gas inlet (31) comprises at least a cavity (33) in at least one side of the housing (3), wherein a layer (34) of a material of the housing (3) remains between the cavity (33) and the measuring unit (5). Optoelectronic component (1) according to at least one of claims 1 to 4, wherein the housing (3) comprises a gas inlet (31), and wherein the gas inlet (31) is covered with a cover (32) which is opaque to the electromagnetic radiation emitted by the radiation-emitting element (4). Optoelectronic component (1) according to at least one of the preceding claims, wherein the detector unit (6) further comprises an integrated circuit (63). Optoelectronic component (1) according to at least one of the preceding claims, wherein the measuring area (51) and / or the reference area (52) are arranged on at least one side of the reflection prism (8), wherein the measuring area (51) and / or the reference area (52) comprises a measuring stack (53) and a protective layer (54), wherein the measuring stack (53) is arranged between the reflection prism (8) and the protective layer (54). Optoelectronic component (1) according to the preceding claim, wherein the reference area (52) further comprises a gas-impermeable layer (55), wherein the gas-impermeable layer (55) is arranged between the measuring stack (53) and the protective layer (54). Optoelectronic component (1) according to at least one of the preceding claims, wherein the reflection prism (8) comprises a transmissive side (81) and a first reflective side (82) and a second reflective side (83), wherein the transmissive side (81) is located on a side of the reflection prism (8) facing the radiation-emitting element (4) and the detector unit (6), wherein the first reflective side (82) is located on a side of the reflection prism (8) facing away from the radiation-emitting element (4) and the detector unit (6), wherein the first reflective side (82) is arranged above the radiation-emitting element (4), wherein the second reflective side (83) is located on a side of the reflection prism (8) facing away from the radiation-emitting element (4) and the detector unit (6), and wherein the second reflective side (83) is located above the detector unit (6). Optoelectronic component (1) according to the preceding claim, wherein the measuring area (51) and / or the reference area (52) is arranged on the transmissive side (81) of the reflection prism (8), and / or wherein the measuring area (51) and / or the reference area (52) is arranged at least on the first reflective side (82) or the second reflective side (83). Optoelectronic component (1) according to at least one of the preceding claims, wherein the first beam path and the second beam path are reflective and / or transmissive. Optoelectronic component (1) according to at least one of the preceding claims, wherein the measuring area (51) and the reference area (52) are arranged directly adjacent to each other. Optoelectronic component (1) according to at least one of claims 1 to 12, further comprising a further reflection prism (9), wherein the measuring area (51) is arranged on the reflection prism (8), and wherein the reference area (52) is arranged on the further reflection prism (9). Optoelectronic component (1) according to the preceding claim, wherein the reflection prism (8) and the further reflection prism (9) are optically separated. Optoelectronic component (1) according to at least one of claims 14 or 15, wherein at least one mirror layer (11) is arranged on at least one triangular side of the reflection prism (8) and / or the further reflection prism (9). Optoelectronic component (1) according to at least one of the preceding claims, wherein the reflection prism (8) is mounted on the radiation-emitting element (4) and the detector unit (6). Optoelectronic component (1) according to at least one of the preceding claims, wherein the radiation-emitting element (4) and the detector unit (6) are mounted on the substrate (2).

Images