comprising the power component cell and power electronics assembly comprising the power component cell

Abstract

Power cell featuring the following: a metal body with a first main surface, a second main surface opposite the first main surface and a side surface extending vertically between the first main surface and the second main surface; a vertical power semiconductor chip in a recess formed in the first main surface of the metal body; and an organic and / or glassy electrical insulator covering the second main surface of the metal body such that the power cell is electrically insulated at least on a first side containing the organic and / or glassy electrical insulator, where the organic and / or glass electrical insulator is limited to the metal body, wherein a back side of the vertical power semiconductor chip is configured to be at a different electrical potential than a front side of the vertical power semiconductor chip, where the metallic body is at the same electrical potential as the back of the vertical power semiconductor chip.

Description

BACKGROUND

[0001] In high-voltage applications that use vertical power semiconductor devices such as vertical power transistors, the back side of the power semiconductor device must be electrically isolated from the heat sink because the back side is electrically active. For example, in a power device cell, the back side of the power device cell is electrically connected to the back side of the power semiconductor chip and thus has the same electrical potential as the back side of the chip. When embedding in a printed circuit board (PCB), a laminate layer must be introduced during the PCB manufacturing process to electrically isolate the back side of the power device cell from the PCB metallization. However, the standard laminate used in printed circuit board processes has low thermal conductivity (-0.65 K / W), which limits the heat dissipation of chip losses and the overall chip performance.More expensive laminates could be used (-6.5 K / W), but these incur higher costs and are typically applied across the entire printed circuit board surface, making high-performance electrical insulation prohibitively expensive for most applications. Furthermore, heat dissipation is limited by the presence of a continuous laminate layer between the electrically active parts and the heat sink. A conventional approach to overcome this limitation is to drill vias through the laminate where electrical insulation is not required, which increases costs twice: the cost of the laminate material where it is not needed, and the cost of drilling the vias and filling them with conductive material (usually copper).

[0002] Therefore, there is a need for an improved design for power device cells. SUMMARY

[0003] According to one embodiment of a power device cell, the power device cell comprises: a metal body having a first main surface, a second main surface opposite the first main surface, and a side surface extending vertically between the first main surface and the second main surface; a vertical power semiconductor chip in a recess formed in the first main surface of the metal body;and an organic and / or glass electrical insulator covering the second main surface of the metal body, such that the power device cell is electrically insulated at least on a first side containing the organic and / or glass electrical insulator, wherein the organic and / or glass electrical insulator is confined to the metal body, wherein a backside of the vertical power semiconductor chip is configured to be at a different electrical potential than a frontside of the vertical power semiconductor chip, wherein the metal body is at the same electrical potential as the backside of the vertical power semiconductor chip;

[0004] According to one embodiment of a power electronics assembly, the power electronics assembly comprises: a printed circuit board; and a power device cell embedded in the printed circuit board, the power device cell comprising: a metal body having a first main surface, a second main surface opposite the first main surface, and a side surface extending vertically between the first main surface and the second main surface; a vertical power semiconductor chip in a recess formed in the first main surface of the metal body;and an organic and / or glass electrical insulator covering the second main surface of the metal body, such that the power device cell is electrically conductive at least on a first side comprising the organic and / or glass electrical insulator, wherein the organic and / or glass electrical insulator is confined to the metal body, wherein a backside of the vertical power semiconductor chip is configured to be at a different electrical potential than a frontside of the vertical power semiconductor chip, wherein the metal body is at the same electrical potential as the backside of the vertical power semiconductor chip;

[0005] According to another embodiment of a power electronics assembly, the power electronics assembly comprises: a metal frame; and a power device cell mounted on the metal frame, the power device cell comprising: a metal body having a first main surface, a second main surface opposite the first main surface, and a side surface extending vertically between the first main surface and the second main surface; a vertical power semiconductor chip in a recess formed in the first main surface of the metal body;and an organic and / or glass electrical insulator covering the second main surface of the metal body, such that the power device cell is at least on a first side comprising the organic and / or glass electrical insulator, wherein the organic and / or glass electrical insulator is confined to the metal body, wherein a backside of the vertical power semiconductor chip is configured to be at a different electrical potential than a frontside of the vertical power semiconductor chip, wherein the metal body is at the same electrical potential as the backside of the vertical power semiconductor chip;

[0006] Those skilled in the art will recognize additional features and advantages upon reading the following detailed description and examining the accompanying drawings. SHORT DESCRIPTION OF THE CHARACTERS

[0007] The elements of the drawings are not necessarily shown to scale. Like reference numerals indicate corresponding similar parts. The features of the various illustrated embodiments may be combined, provided they are not mutually exclusive. The embodiments are shown in the drawings and are detailed in the following description. Fig. 1 shows a cross-sectional view of an embodiment of a power device cell. Fig. 2 shows a cross-sectional view of the power device cell according to another embodiment. Fig. 3 shows a cross-sectional view of the power device cell according to another embodiment. Fig. 4 shows a cross-sectional view of the power device cell according to another embodiment. Fig. 5 shows a cross-sectional view of an organic and / or glass electrical insulator of the power device cell according to an embodiment. Fig. Figure 6 shows a cross-sectional view of a power electronics assembly including a printed circuit board (PCB) and the power device cell embedded in the PCB. Fig. 7 shows a cross-sectional view of a power electronics assembly including the power device cell according to another embodiment. DETAILED DESCRIPTION

[0008] The embodiments described herein provide a power device cell designed for high-voltage applications (e.g., 20 V to 1200 V or higher) and / or high-current applications (e.g., one or more amperes up to hundreds or more amperes). The power device cell includes a vertical power semiconductor chip, such as a vertical power transistor chip or a vertical power diode chip, disposed in a recess formed in a first major surface of a metallic body. An organic and / or glass electrical insulator covers the opposite (second) major surface of the metallic body such that the power device cell is electrically insulated at least on a first side containing the organic and / or glass electrical insulator, wherein the organic and / or glass electrical insulator is confined to the metallic body.The backside of the vertical power semiconductor chip is configured to be at a different electrical potential than the frontside of the chip, and the metal body is at the same electrical potential as the backside of the vertical power semiconductor chip.

[0009] The organic and / or glass electrical insulator of the power device cell can be attached directly to the back of the metal body or its support. One side of the organic and / or glass electrical insulator can be coated with an electrically and / or thermally conductive layer or film, e.g., with adhesive layers between an insulator and conductive layers, and / or between a metal layer of the device and the semiconductor chip and / or its support, and / or between the metal layer and a cooling support. Both sides of the organic and / or glass electrical insulator can be coated with an electrically and / or thermally conductive layer or film, e.g., adhesive layers between a tape and conductive layers, and / or between a metal layer of the device cell and the semiconductor chip and / or its support, and / or between the metal layer and a cooling support.

[0010] The power device cell design described here offers a cost-effective alternative to standard power device cells. The process for manufacturing the vertical power semiconductor chip can also be used to manufacture the organic and / or glass electrical insulator, enabling further cost savings. The cost-effective and productive embedding of the power device cell in a carrier, such as a printed circuit board, is achieved by eliminating the need to produce a separate laminate layer during the circuit board manufacturing process. Good thermal and mechanical adhesion of the power device cell to the carrier can be achieved through a metal-to-metal bond.

[0011] Exemplary embodiments of the power device cell design and power electronic assemblies utilizing the power device cell design are described below with reference to the figures. Each of the power device cell embodiments described herein can be used interchangeably unless expressly stated otherwise.

[0012] Fig. 1 shows a cross-sectional view of one embodiment of a power device cell 100. The power device cell 100 includes a metal body 102 having a first main surface 104, a second main surface 106 opposite the first main surface 104, and a side surface 108 extending vertically between the first main surface 104 and the second main surface 106. A vertical power semiconductor chip 110 is disposed in a recess 112 formed in the first main surface 104 of the metal body 102.

[0013] In one embodiment, the metal body 102 is a Cu (copper) block. Other types of metal blocks can also be used as the metal body 102, e.g., an Al (aluminum) block. The recess 112 can be formed in the first main surface 104 of the metal body 102 by stamping, embossing, etching, etc. The recess 112 is dimensioned to accommodate the vertical power semiconductor chip 110.

[0014] The vertical power semiconductor chip 110 is designed for high-voltage applications (e.g., 20 V to 1200 V or higher) and / or high-current applications (e.g., one or more amperes to hundreds or more amperes). The backside 114 of the vertical power semiconductor chip 110 is configured to be at a different electrical potential than the frontside 116 of the vertical power semiconductor chip 110. For example, the vertical power semiconductor chip 110 may be a vertical power diode chip having an anode terminal on the frontside 116 of the chip and a cathode terminal on the backside 114 of the chip.

[0015] In another embodiment, the vertical power semiconductor chip 110 may be a vertical power transistor chip having a load terminal on the chip front side 116 and another load terminal on the chip back side 114. For example, in a vertical power MISFET (metal-insulator-semiconductor field-effect transistor) made of Si (silicon) or SiC (silicon carbide), the source terminal and one or more additional terminals, such as a gate terminal, one or more sense terminals, etc., may be located on the chip front side 116, and the drain terminal may be located on the chip back side 114. In the case of an IGBT (insulated-gate bipolar transistor), the emitter terminal and one or more additional terminals, such as a gate terminal, one or more sense terminals, etc., may be located on the chip front side 116, and the collector terminal may be located on the chip back side 114.Other types of vertical devices may be integrated into the vertical power semiconductor chip 110.

[0016] The backside 114 of the vertical power semiconductor chip 110 is electrically connected to the metal body 102, e.g., by an electrically conductive chip attach material or connection 118 such as solder, an electrically conductive adhesive, a sintered connection, a diffusion-soldered connection, a brazed connection, etc. Since the backside 114 of the vertical power semiconductor chip 110 is electrically connected to the metal body 102, the metal body 102 is at the same electrical potential as the backside 114 of the vertical power semiconductor chip 110 at both the first and second main surfaces 104, 106 of the metal body 102. Accordingly, all electrical connections to the vertical power semiconductor chip 110 are accessible at the frontside 104 of the power device cell 100.The term "equal electrical potential" used here is intended to encompass the tiny electrical potential drop across the thickness of the metallic body 102, which is, of course, not a perfect electrical conductor. Accordingly, the electrical potential at both major surfaces 104, 106 of the metallic body 102 is considered equal here.

[0017] The front side 116 of the vertical power semiconductor chip 110 may be coplanar with the first main surface 104 of the metal body 102, as shown in Fig. 1. The front side 116 of the vertical power semiconductor chip 110 may instead be in a different (higher or lower) plane than the first main surface 104 of the metal body 102.

[0018] In any case, the power device cell 100 also comprises an organic and / or glass electrical insulator 120 covering the second main surface 106 of the metallic body 102, such that the power device cell 100 is electrically insulated at least on a first side comprising the organic and / or glass electrical insulator 120. The organic and / or glass electrical insulator 120 is confined to the metallic body 102. That is, the organic and / or glass electrical insulator 120 is confined to the dimensions and shape of the metallic body 102. In Fig. 1, the organic and / or glass electrical insulator 120 is confined to the second main surface 106 of the metallic body 102. In this embodiment, the organic and / or glass electrical insulator 120 has the same area as the second main surface 106 of the metallic body 102 and defines the side of the power device cell 100 that is electrically insulated, but the area of ​​the organic and / or glass electrical insulator 120 may also be smaller.

[0019] In one embodiment, the organic and / or glass electrical insulator 120 is part of a foil or tape applied to the second main surface 106 of the metallic body 102. For example, the foil or tape may be laminated or glued to the second main surface 106 of the metallic body 102. In another embodiment, the organic and / or glass electrical insulator 120 is a resist, adhesive, or wax coating the second main surface 106 of the metallic body 102. In another embodiment, the organic and / or glass electrical insulator 120 comprises plastic. In another embodiment, the organic and / or glass electrical insulator 120 is a glass fabric.

[0020] The organic and / or glass electrical insulator 120, individually or in combination, can withstand temperatures of at least 100°C, 150°C, 175°C, 200°C, 225°C or higher and has a high breakdown voltage of at least 50 V up to 10 kV or higher.

[0021] The organic and / or glass electrical insulator 120 may, individually or in combination, have a thickness T_org in a range from 5 mm to 0.01 mm, e.g., 2 mm to 0.05 mm.

[0022] The power device cell 100 may individually or in combination have a thickness tolerance of + / - 100 micrometers (µm), including the organic and / or glass electrical insulator 120. That is, in some embodiments, the thickness T_cell of the power device cell 100 may not vary by more than + / - 100 µm.

[0023] Fig. 2 shows a cross-sectional view of the power device cell 100 according to another embodiment. In Fig. 2, the organic and / or glass electrical insulator 120 extends onto the side surface 108 of the metallic body 102.

[0024] Fig. 3 shows a cross-sectional view of the power device cell 100 according to another embodiment. In Fig. 3, the organic and / or glass electrical insulator 120 extends further onto the first main surface 104 of the metallic body 102. Electrical contact to the first main surface 104 of the metallic body 102 and to each terminal on the front side 116 of the vertical power semiconductor chip 110 can be achieved by forming openings (in Fig. 3) in the part of the organic and / or glass electrical insulator 120 covering the first main surface 104 of the metallic body 102, and filling the openings with an electrically conductive material such as Cu. The electrically conductive material can be patterned to ensure that the different electrical potentials of the power device cell 100 remain separate.

[0025] Fig. 4 shows a cross-sectional view of the power device cell 100 according to another embodiment. In Fig. 4, the power component cell 100 further comprises a metal layer 200 covering the side surface 202 of the organic and / or glass electrical insulator 120, which faces away from the metal body 102. The metal layer 200 may, for example, be a Cu layer. The metal layer 200 enables a metal-to-metal connection between the power component cell 100 and a carrier (in Fig. 4 not shown) for the power device cell 100, thereby providing improved thermal and mechanical adhesion of the power device cell 100 to the carrier.

[0026] Fig. 5 shows a cross-sectional view of the organic and / or glass electrical insulator 120 of the power device cell 100 according to one embodiment. Fig. 5, the organic and / or glass electrical insulator 120 is a glass fabric 300 that is part of a layer stack. The layer stack also includes an aluminum foil 302 disposed between the glass fabric 300 and the second major surface 106 of the metal body 102. The layer stack further includes an adhesive 304, such as a silicone adhesive, applied to the side 306 of the glass fabric 300 facing away from the aluminum foil 302, and a release layer 308 applied to the side 310 of the adhesive 304 facing away from the glass fabric 300.

[0027] Fig. 6 shows a cross-sectional view of a power electronics assembly 400 including a printed circuit board (PCB) 402 as a carrier for the power device cell 100. According to this embodiment, the power device cell 100 is embedded in the printed circuit board 402. The power electronics assembly 400 can be part of a power electronics circuit for use in various power applications, such as DC / AC inverters, DC / DC converters, AC / DC converters, DC / AC converters, AC / AC converters, multi-phase inverters, H-bridges, traction inverters, on-board chargers, etc.

[0028] A laminated structure 404 of the circuit board 402 covers the organic and / or glass electrical insulator 120 of the power device cell 100. The heat dissipation to the laminated structure 404 of the circuit board 402 occurs laterally through the side surface 108 of the power device cell 100, as indicated by the arrows marked with “1” in Fig. 6. Since the organic and / or glass electrical insulator 120 is confined to the metallic body 102 of the power device cell 100, the organic and / or glass electrical insulator 120 is present only adjacent to the vertical power semiconductor chip 110, i.e., only adjacent to the area of ​​the circuit board 402 exposed to high voltage during operation. Accordingly, the power device cell 100 enables both improved heat dissipation and a reduced thickness of the circuit board 402, since the circuit board 402 does not require an additional laminate layer for electrically insulating the power device cell 100.

[0029] The laminated structure 404 of the circuit board 402 includes one or more electrically conductive (rerouting) layers 406 and one or more electrically insulating layers 408. For example, the one or more electrically insulating layers 408 may comprise FR-4, a common dielectric material used in circuit boards, and the one or more electrically conductive layers 406 may be Cu layers. If the circuit board 402 includes more than one electrically conductive layer 406, vias 410 of the electrically conductive layers, such as Cu vias, connect the electrically conductive layers 406 to each other to form a multilayer circuit board.

[0030] As in Fig. 6, the power device cell 100 may also include a metal layer 200 covering the side surface 202 of the organic and / or glass electrical insulator 120 facing away from the metal body 102 of the device cell 100. According to this embodiment, the metal layer 200 of the power device cell 100 is attached to a metal layer 406 of the circuit board by a die attach material or bond 412 such as solder, an electrically conductive adhesive, etc.

[0031] Fig. 7 shows a cross-sectional view of a power electronics assembly 500 including the power device cell 100 according to another embodiment. The power electronics assembly 500 may be part of a power electronics circuit for use in various power applications, such as DC / AC inverters, DC / DC converters, AC / DC converters, DC / AC converters, AC / AC converters, multiphase inverters, H-bridges, traction inverters, on-board chargers, etc.

[0032] In Fig. 7, the power device cell 100 is attached to a metal frame 502. The metal frame 502 supporting the power device cell 100 can be manufactured by stamping, punching, etching, etc. In one embodiment, the metal frame 502 is a lead frame (e.g., made of copper, a copper alloy, an iron-nickel alloy, etc.).

[0033] As in Fig.7, the power device cell 100 may also include a metal layer 200 covering the side 202 of the organic and / or glass electrical insulator 120 facing away from the metal body 102 of the device cell 100. According to this embodiment, the metal layer 200 of the power device cell 100 is attached to the metal frame 502 supporting the device cell 100 by a die attach material or bond 504, such as solder, an electrically conductive adhesive, a sintered bond, a diffusion-soldered bond, a brazed bond, etc.

[0034] Although the present disclosure is not so limited, the following numbered examples illustrate one or more aspects of the disclosure.

[0035] Example 1. A power device cell comprising: a metal body having a first major surface, a second major surface opposite the first major surface, and a side surface extending vertically between the first major surface and the second major surface; a vertical power semiconductor chip in a recess formed in the first major surface of the metal body;and an organic and / or glass electrical insulator covering the second main surface of the metal body such that the power device cell is electrically insulated at least on a first side, wherein the organic and / or glass electrical insulator is confined to the metal body, wherein a backside of the vertical power semiconductor chip is configured to be at a different electrical potential than a frontside of the vertical power semiconductor chip, wherein the metal body is at the same electrical potential as the backside of the vertical power semiconductor chip;

[0036] Example 2: The power device cell of Example 1, wherein the organic and / or glass electrical insulator is part of a foil or tape applied to the second main surface of the metallic body.

[0037] Example 3: The power device cell of Example 1, wherein the organic and / or glass electrical insulator is a resist, adhesive, or wax coating the second major surface of the metallic body.

[0038] Example 4: Power device cell from Example 1, wherein the organic and / or glass electrical insulator comprises plastic.

[0039] Example 5: Power device cell from Example 1, wherein the organic and / or glass electrical insulator is a glass fabric.

[0040] Example 6. The power device cell of Example 5, wherein the glass fabric is part of a layer stack that also includes an aluminum foil disposed between the glass fabric and the second major surface of the metal body, an adhesive applied to a side of the glass fabric facing away from the aluminum foil, and a liner applied to a side of the adhesive facing away from the glass fabric.

[0041] Example 7: The power device cell of any one of examples 1 to 6, wherein the organic and / or glass electrical insulator has the same area as the second major surface of the metal body.

[0042] Example 8: The power device cell of any one of Examples 1 to 6, wherein the organic and / or glass electrical insulator extends onto the side surface of the metal body.

[0043] Example 9: Power device cell according to Example 8, wherein the organic and / or glass electrical insulator extends further onto the first main surface of the metallic body.

[0044] Example 10: Power device cell according to any one of Examples 1 to 9, wherein the organic and / or glass electrical insulator has a thickness in the range of 5 mm to 0.01 mm.

[0045] Example 11. The power device cell of Example 10, wherein the thickness of the organic and / or glass electrical insulator is in a range of 2 mm to 0.05 mm.

[0046] Example 12. The power device cell of any one of Examples 1 to 10, wherein the power device cell has a thickness tolerance of + / - 100 micrometers, including the organic and / or glass electrical insulator.

[0047] Example 13: The power device cell of any one of Examples 1 to 11, further comprising a metal layer covering a side of the organic and / or glass electrical insulator facing away from the metal body.

[0048] Example 14: A power electronics assembly comprising: a printed circuit board; and a power device cell embedded in the printed circuit board, the power device cell comprising: a metal body having a first main surface, a second main surface opposite the first main surface, and a side surface extending vertically between the first main surface and the second main surface; a vertical power semiconductor chip in a recess formed in the first main surface of the metal body;and an organic and / or glass electrical insulator covering the second main surface of the metal body such that the power device cell is electrically insulated at least on a first side, wherein the organic and / or glass electrical insulator is confined to the metal body, wherein a backside of the vertical power semiconductor chip is configured to be at a different electrical potential than a frontside of the vertical power semiconductor chip, wherein the metal body is at the same electrical potential as the backside of the vertical power semiconductor chip.;

[0049] Example 15: The power electronics assembly of Example 14, wherein the power device cell further comprises a metal layer covering a side of the organic and / or glass electrical insulator facing away from the metal body, and wherein the metal layer of the power device cell is attached to a metal layer of the printed circuit board.

[0050] Example 16: The power electronics assembly of example 14 or 15, wherein a laminated structure of the printed circuit board covers the organic and / or glass electrical insulator of the power device cell, and wherein the laminated structure of the printed circuit board comprises one or more electrically conductive layers and one or more electrically insulating layers.

[0051] Example 17: A power electronics assembly comprising: a metal frame; and a power device cell mounted on the metal frame, the power device cell comprising: a metal body having a first main surface, a second main surface opposite the first main surface, and a side surface extending vertically between the first main surface and the second main surface; a vertical power semiconductor chip in a recess formed in the first main surface of the metal body;and an organic and / or glass electrical insulator covering the second main surface of the metal body such that the power device cell is electrically insulated at least on a first side, wherein the organic and / or glass electrical insulator is confined to the metal body, wherein a backside of the vertical power semiconductor chip is configured to be at a different electrical potential than a frontside of the vertical power semiconductor chip, wherein the metal body is at the same electrical potential as the backside of the vertical power semiconductor chip.;

[0052] Example 18. The power electronics assembly of Example 17, wherein the power device cell further comprises a metallic layer covering a side of the organic and / or glass electrical insulator facing away from the metallic body, and wherein the metallic layer of the power device cell is attached to the metallic frame.

[0053] Terms such as "first," "second," and the like are used to describe various elements, areas, sections, etc., and are not intended to be limiting. Like terms refer to like elements throughout the description.

[0054] The terms "with," "containing," "including," "having," and similar terms used in this document are open-ended terms that indicate the presence of the stated elements or features, but do not exclude additional elements or features. The articles "a," "an," and "the" are intended to include both the singular and plural, unless the context clearly indicates otherwise.

[0055] The expression "and / or" should be interpreted to include all possible conjunctive and disjunctive combinations, unless explicitly stated otherwise. For example, the expression "A and / or B" should be interpreted to mean only A, only B, or both A and B. The expression "at least one of" should be interpreted in the same way as "and / or" unless explicitly stated otherwise. For example, the expression "at least one of A and B" should be interpreted to mean only A, only B, or both A and B.

[0056] It is understood that the features of the various embodiments described herein may be combined with one another unless expressly stated otherwise.

[0057] Although specific embodiments have been illustrated and described herein, it will be apparent to those skilled in the art that a variety of alternative and / or equivalent implementations may be substituted for the specific embodiments shown and described without departing from the scope of the present invention. This application is intended to cover any adaptations or variations of the specific embodiments discussed herein. Therefore, this invention is to be limited only by the claims and their equivalents.

Claims

[1] Power device cell comprising: a metal body having a first major surface, a second major surface opposite the first major surface, and a side surface extending vertically between the first major surface and the second major surface; a vertical power semiconductor chip in a recess formed in the first main surface of the metal body; and an organic and / or glass electrical insulator covering the second main surface of the metal body such that the power device cell is electrically insulated at least on a first side containing the organic and / or glass electrical insulator, wherein the organic and / or glass electrical insulator is confined to the metal body, wherein a back side of the vertical power semiconductor chip is configured to be at a different electrical potential than a front side of the vertical power semiconductor chip, where the metallic body is at the same electrical potential as the back of the vertical power semiconductor chip. [2] Power device cell according to claim 1, wherein the organic and / or glass electrical insulator is part of a foil or tape applied to the second main surface of the metallic body. [3] The power device cell of claim 1, wherein the organic and / or glass electrical insulator is a resist, adhesive or wax coating the second major surface of the metallic body. [4] Power device cell according to claim 1, wherein the organic and / or glass electrical insulator comprises plastic. [5] Power device cell according to claim 1, wherein the organic and / or glass electrical insulator is a glass fabric. [6] The power device cell of claim 5, wherein the glass fabric is part of a layer stack that also includes an aluminum foil disposed between the glass fabric and the second major surface of the metal body, an adhesive applied to a side of the glass fabric facing away from the aluminum foil, and a liner applied to a side of the adhesive facing away from the glass fabric. [7] Power device cell according to one of the preceding claims, wherein the organic and / or glass electrical insulator has the same area as the second main surface of the metallic body. [8] Power device cell according to one of claims 1 to 6, wherein the organic and / or glass electrical insulator extends onto the side surface of the metallic body. [9] A power device cell according to claim 8, wherein the organic and / or glass electrical insulator further extends onto the first main surface of the metallic body. [10] Power device cell according to one of the preceding claims, wherein the organic and / or glass electrical insulator has a thickness in the range of 5 mm to 0.01 mm. [11] Power device cell according to claim 10, wherein the thickness of the organic and / or glass electrical insulator is in a range of 2 mm to 0.05 mm. [12] A power device cell according to any one of the preceding claims, wherein the power device cell has a thickness tolerance of + / - 100 micrometers, including the organic and / or glass electrical insulator. [13] A power device cell according to any one of the preceding claims, further comprising a metallic layer covering a side of the organic and / or glass electrical insulator facing away from the metallic body. [14] Power electronics assembly comprising: a printed circuit board; and a power component cell embedded in the printed circuit board, wherein the power device cell comprises: a metal body having a first main surface, a second main surface opposite the first main surface, and a side surface extending vertically between the first main surface and the second main surface; a vertical power semiconductor chip in a recess formed in the first main surface of the metal body; and an organic and / or glass electrical insulator covering the second main surface of the metallic body, so that the power device cell is electrically insulated at least on a first side containing the organic and / or glass electrical insulator, wherein the organic and / or glass electrical insulator is confined to the metallic body, wherein a back side of the vertical power semiconductor chip is configured to be at a different electrical potential than a front side of the vertical power semiconductor chip, where the metallic body is at the same electrical potential as the back of the vertical power semiconductor chip. [15] The power electronics assembly of claim 14, wherein the power device cell further comprises a metallic layer covering a side of the organic and / or glass electrical insulator facing away from the metallic body, and wherein the metallic layer of the power device cell is attached to a metallic layer of the printed circuit board. [16] The power electronics assembly of claim 14 or 15, wherein a laminated structure of the printed circuit board covers the organic and / or glass electrical insulator of the power device cell, and wherein the laminated structure of the printed circuit board comprises one or more electrically conductive layers and one or more electrically insulating layers. [17] Power electronics assembly comprising: a metal frame; and a power device cell mounted on the metal frame, the power device cell comprising: a metal body having a first main surface, a second main surface opposite the first main surface, and a side surface extending vertically between the first main surface and the second main surface; a vertical power semiconductor chip in a recess formed in the first main surface of the metal body; and an organic and / or glass electrical insulator covering the second main surface of the metallic body, so that the power device cell is electrically insulated at least on a first side containing the organic and / or glass electrical insulator, wherein the organic and / or glass electrical insulator is confined to the metallic body, wherein a back side of the vertical power semiconductor chip is configured to be at a different electrical potential than a front side of the vertical power semiconductor chip, where the metal body is at the same electrical potential as the back of the vertical power semiconductor chip. [18] The power electronics assembly of claim 17, wherein the power device cell further comprises a metal layer covering a side of the organic and / or glass electrical insulator facing away from the metal body, and wherein the metal layer of the power device cell is attached to the metal frame.

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