Method and system for coupling two bits from multiple superconducting quantum bits

Description

TECHNICAL FIELD

[0001] The present application relates to the field of superconducting quantum technology, and, in particular, to a method for coupling any two qubits from among multiple superconducting qubits.BACKGROUND

[0002] Superconducting qubits are considered as one of the most promising solid-state method for implementing a quantum computer due to their advantages in controllability, low loss and scalability. Coherent controllable coupling between qubits is a necessary condition for achieving large-scale quantum computation.

[0003] Currently, it is well-known to couple superconducting qubits through capacitance, inductance or a superconducting Josephson junction. In such a coupling mode, it is needed to connect two to-be-coupled qubits through fixed wiring (hard wiring). This method is space-constrained, and only coupling between several qubits adjacent to one superconducting qubit or between several remote qubits. However, in the application of quantum computation and quantum information, coupling between any two of multiple qubits is often required, and the coupling cannot be implemented in a hard-wired mode. JACAK L. ET AL: "Spin-Based Quantum Information Processing in Magnetic Quantum Dots",OPEN SYSTEMS AND INFORMATION DYNAMICS, vol. 12, 1 June 200, pages 133-141, pertains to a qubit coupling method employing a magnetic film material capable of implementing spin waves.SUMMARY

[0004] On this basis, it is necessary to provide a method for coupling any two qubits from among multiple superconducting qubits and a system thereof to solve the problem in which coupling between any two of multiple qubits cannot be implemented in the hardwired mode.

[0005] A qubit coupling method in accordance with claim 1 is provided in the present disclosure. The method is applied to an occasion provided with a multi-superconducting qubit array and a magnetic film material 100 capable of implementing spin waves. The method includes the steps described below.

[0006] The magnetic film material 100 is disposed below the multi-superconducting-qubit array 200.

[0007] Multiple spin wave channels through which the spin waves pass are formed through a combination of magnetization directions of magnetic domains in the magnetic film material 100.

[0008] Multiple qubits of the multi-superconducting-qubit array are disposed above the multiple spin wave channels through which the spin waves pass correspondingly, so as to implement a coupling between each qubit and the spin waves.

[0009] At least two qubits are disposed above one spin wave channel through which the spin waves pass. The coupling between the at least two qubits is implemented through the coupling between the each of the at least two qubits and the spin waves.

[0010] In one embodiment of the present disclosure, the multiple spin wave channels through which the spin waves pass are changed by changing the combination of the magnetization directions of the magnetic domains in the magnetic film material.

[0011] In one embodiment of the present disclosure, the spin waves at least include a first spin and a second spin. The first spin correspondingly acts on a first qubit of the multi-superconducting-qubit array. The second spin correspondingly acts on a second qubit of the multi-superconducting-qubit array.

[0012] In one embodiment of the present disclosure, the coupling between the first spin and the first qubit is implemented, the coupling between the second spin and the second qubit is implemented. The coupling between the first qubit and the second qubit is implemented through the spin waves.

[0013] In one embodiment of the present disclosure, the coupling energy of multiple superconducting qubit coils and the spin waves is adjusted by adjusting the number density of the first spin and the second spin of the spin waves.

[0014] In one embodiment of the present disclosure, the coupling energy of the multiple superconducting qubit coils and the spin waves is adjusted by adjusting the vertical distance between the multiple superconducting qubit coils and the magnetic film material.

[0015] In one embodiment of the present disclosure, the coupling energy of the multiple superconducting qubit coils and the spin waves is adjusted by adjusting magnetization directions or magnetization intensities of the magnetic domains in the magnetic film material.

[0016] A qubit coupling system in accordance with claim 8 is provided in the present disclosure. The system includes multiple superconducting qubit array, a magnetic film material a driving apparatus.

[0017] The multi-superconducting-qubit array includes multiple qubit coils.

[0018] The magnetic film material is configured to form multiple spin wave channels by using magnetic domain walls between magnetic domains as waveguides. The driving apparatus is configured to apply a magnetic field to the magnetic film material to drive spin waves in the multiple spin wave channels.

[0019] The multi-superconducting-qubit array, the magnetic film material and the driving apparatus are sequentially disposed along the vertical direction.

[0020] In one embodiment of the present disclosure, the magnetic film material is divided into multiple magnetic domain elements, and the magnetization directions of the multiple magnetic domain elements are changed through the driving apparatus.BRIEF DESCRIPTION OF DRAWINGS

[0021] FIG. 1 is a flowchart of a qubit coupling method. FIG. 2 is a top view of a magnetic film material and a qubit array according to an embodiment. FIG. 3 is a side view of a magnetic film material and a qubit array according to an embodiment. FIG. 4 is a structure view of a spin of spin waves and a qubit according to an embodiment. FIG. 5 is a graph of a coupling strength change according to an embodiment. FIG. 6 is a schematic view of a qubit coupling system according to an embodiment.

[0022] In the drawings: magnetic film material100first spin101second spin102superconducting-qubit array200first qubit201second qubit202driving apparatus300 DETAILED DESCRIPTION

[0023] The object, features and advantages of the invention will be more apparent from the detailed description in conjunction with the drawings. Details are set invention. forth below to facilitate a thorough understanding of the However, the present disclosure can be implemented in many modes different from the embodiments described herein, and those skilled in the art can make similar modifications without departing scope of the appended claims. from the

[0024] Referring to FIG. 1, the present disclosure provides a method for coupling any two qubits from among multiple superconducting qubits. The method is applicable to an occasion provided with a multi-superconducting-qubit array 200 and a magnetic film material 100 capable of implementing spin waves. The method includes the steps described below.

[0025] In S100, the magnetic film material 100 is disposed below the multi-superconducting-qubit array 200.

[0026] In S200, multiple spin wave channels through which the spin waves pass are formed through a combination of magnetization directions of magnetic domains in the magnetic film material 100.

[0027] In S300, multiple qubits of the multi-superconducting-qubit array (200) are disposed above the multiple spin wave channels through which the spin waves pass correspondingly, so that a coupling between each qubit and the spin waves is implemented.

[0028] In S400, at least two qubits are disposed above one spin-wave channel, and a coupling between the at least two qubits is implemented through the coupling between the each of the at least two qubits and the spin waves.

[0029] In S100, the magnetic film material 100 is disposed below the multi-superconducting-qubit array 200 in the vertical direction, so that the multiple qubits of multi-superconducting-qubit array 200 are coupled through the magnetic film material 100.

[0030] The multi-superconducting-qubit array 200 is composed of the multiple qubits. The multiple qubits are formed by multiple qubit coils. The state of each qubit coil is separately controlled by an additional wire. The magnetic film material 100 is used for forming the multiple spin wave channels. The magnetic film material (100) may be divided into multiple elements. Each element is one magnetic domain. The magnetization direction of the magnetic domain of the each element may be separately controlled.

[0031] Specifically, referring to FIG. 2, in the magnetic material, due to the competition between an exchange effect, anisotropy of a magnetic crystal and a magnetic dipole-dipole interaction, in a system, in order to reduce the total energy, small magnetized regions having different directions will spontaneously be formed, which is so-called the magnetic domains, while the transition region of adjacent magnetic domains is a magnetic domain wall. Theoretical calculation shows that the spin waves have a bound-state solution in the magnetic domain wall, and the energy gap of this spin wave mode is zero in the case where only the exchange effect and the anisotropy of the magnetic crystal are considered. Due to this feature, the magnetic domain wall can serve as a spin wave channel for conducting the spin waves.

[0032] In S200, the multiple spin wave channels through which the spin waves pass are formed through the combination of magnetization directions of the magnetic domains in the magnetic film material 100. The magnetic film material 100 is provided with multiple magnetic domain elements. The multiple magnetic domain elements have their respective magnetization directions. The transition region of adjacent magnetic domain elements forms the magnetic domain wall, that is, the spin wave channel of the present application, for conducting one or more spin waves.

[0033] Furthermore, the formation of the magnetic domains may be controlled through the applied magnetic field, and whether the directions of the adjacent magnetic domains are the same or different can determine whether the magnetic domain wall exists between the magnetic domains. Only when the magnetization directions between adjacent magnetic domain elements are different, does the magnetic domain wall, that is, the spin wave channel, exist. Otherwise, no domain wall exists. The layout of the magnetic domain wall varies with the arrangement of the magnetic domains, thus any spin wave wiring mode can be obtained through editing of the arrangement of the magnetic domains and reconstruction can be performed between the magnetic domains.

[0034] Specifically, a driving apparatus 300 is disposed below the magnetic film material 100. The apparatus is used for applying the magnetic field to the magnetic film material 100 to drive one or more spin waves in the magnetic domain wall, that is, the spin wave channel.

[0035] In one embodiment, the driving apparatus 300 disposed below the magnetic film material 100 is a circuit board with a specific wiring mode.

[0036] In S300, the multiple qubits of the multi-superconducting-qubit array 200 are disposed above the multiple spin wave channels through which the spin waves pass correspondingly, so that the coupling between the each qubit and the spin waves is implemented.

[0037] Referring to FIGS. 3 and 4, the multiple qubit coils of the multi-superconducting-qubit array 200 are disposed above the spin wave channel, so that the coupling between the spin waves in the spin wave channel and the each qubit is implemented. A path along which the spin waves can travel is defined through an adjustment to the combination of the magnetization directions of the magnetic domain elements in the magnetic film material 100, so that the multiple superconducting qubits above the path can be connected through the spin waves so as to be coupled.

[0038] In S400, at least two qubits are disposing above one spin wave channel, and the coupling between the at least two qubits is implemented through the coupling between the each of the at least two qubits and the spin waves.

[0039] Referring to FIG. 3, a spin wave channel includes at least a first spin 101 and a second spin 102. The first spin 101 correspondingly acts on a first qubit 201 of the multi-superconducting-qubit array 200. The second spin 102 correspondingly acts on a second qubit 202 of the multi-superconducting-qubit array 200. Further, the coupling between the first spin 101 and the first qubit 201 is implemented and the coupling between the second spin 102 and the second qubit 202 is implemented.

[0040] In one embodiment, after the coupling between the first spin 101 and the first qubit 201 is implemented and the coupling between the second spin 102 and the second qubit 202 is implemented, the state change of the first qubit 201 in the superconducting qubit layer acts on the first spin 101 of the spin waves through inter-layer coupling, and then the state change is transferred to the second spin 102 through the spin waves traveling along the specific path of the spin wave channel. After that, the state change acts on the second qubit 202 through the interlayer coupling. In this way, the coupling between the first spin 101 and the second spin 102 is established, and at the same time, the coupling between the first qubit 201 and the second qubit 202 is also established. The traveling path of the spin waves, that is, the path of the spin wave channel, may be controlled through the adjustment to the combination of the magnetization directions of the magnetic domains in the magnetic film material 100, so that the coupling between any two qubits can be implemented.

[0041] Referring to FIG. 4, in one embodiment, a single qubit coil generates the magnetic field to act on the spins in the spin wave channel. When the radius R = 1 µm and the superconducting critical current I = 100 nanoamps in one coil, the magnetic field at the center of the coil is about 0.001 gauss. Such a magnetic field generates about 1 electronvolt of energy on a single spin.

[0042] When the magnetic film material 100 is disposed below the superconducting qubit coil, the single superconducting qubit coil can accommodate 1 million to 10 million spins, the total energy of the superconducting qubit coil can reach 1 micro-electronvolt to 10 micro-electronvolts that are close to the energy level difference between two quantum states of one superconducting qubit. Therefore, the coupling between the superconducting qubit coil and the magnetic film material 100 can change the state of the superconducting qubit. It is also known that the energy amplitude of a spin wave is within 3000 micro-electronvolts to 10000 micro-electronvolts that are much greater than the coupling energy and is capable of transferring this coupling energy.

[0043] Further, the magnitude of the coupling energy may be adjusted through: (1) an adjustment to the number density of the spin in the magnetic domains in the magnetic film material 100, (2) an adjustment to the distance between the multiple superconducting qubit coils and the magnetic film material 100, and (3) an adjustment to the magnetization directions or magnetization intensities of the magnetic domains in the magnetic film material 100.

[0044] Referring to FIG. 5, in one embodiment, as the distance between the plane in which the multiple superconducting qubit coils are located and the plane in which the spin waves are located increases, the interaction between the multiple qubit coils and the spin waves will decay rapidly, so the magnitude of the interaction can be adjusted through the vertical distance between the multiple superconducting qubit coils and the magnetic film material.

[0045] In one embodiment, the magnetization directions of ferromagnetic domains on both sides of one spin wave channel, which is covered by superconducting qubit coils, are opposite, so the overall magnetic flux is zero and the superconductivity will not be destroyed. For the same purpose, the ferromagnetic magnetic domains may be replaced by antiferromageic domains, so that the superconductivity can be prevented from being destroyed by the high magnetic field.

[0046] A structure where a superconducting qubit layer is disposed in an upper layer and a magnetic film material 100 layer is disposed in a lower layer along the vertical direction respectively is adopted, and the state change of the multiple qubits of the superconducting qubit layer is transferred through the spin waves of the magnetic film material 100 layer. Finally, the coupling between any two superconducting qubits is implemented through both the soft connection of the spin waves, and the coupling between the each superconducting qubit and the spin waves. At the same time, the magnitude of the coupling energy can be adjusted according to multiple methods, for example, the adjustment to the number density of the spin in the magnetic domains in the magnetic film material 100, the adjustment to the distance between the multiple superconducting qubit coils and the magnetic film material 100, the adjustment to the magnetization directions or magnetization intensities of the magnetic domains in the magnetic film material 100, or the like. Moreover, the traveling path of the spin wave channel can be changed through an adjustment to the distribution of the multiple magnetic domain elements, so that the coupling between any two superconducting qubits is further implemented.

[0047] Referring to FIG. 6, the present disclosure provides a qubit coupling system. The system is provided with a multi-superconducting-qubit array 200, a magnetic film material 100 and a driving apparatus 300 sequentially along the vertical direction. The driving apparatus 300 is used for applying a magnetic field to the magnetic film material to drive spin waves in a spin-wave channel.

[0048] The multi-superconducting-qubit array 200 is composed of multiple qubits. The multiple qubits are formed by multiple qubit coils. The state of each qubit coil is separately controlled by an additional wire. The magnetic film material 100 is used for forming the spin wave channel. The magnetic film material 100 may be divided into multiple elements. Each element is one magnetic domain. The magnetization direction of the magnetic domain of the each element may be separately controlled.

[0049] The magnetic film material 100 is used for forming the spin wave channel.

[0050] The magnetic film material 100 may be divided into multiple elements. Each element is one magnetic domain. The magnetization direction of the magnetic domain of the each element may be separately controlled. In the magnetic material, due to the competition between an exchange effect, anisotropy of a magnetic crystal and a magnetic dipole-dipole interaction, in a system, in order to reduce the total energy, small magnetized regions having different directions will spontaneously be formed, which is so-called the magnetic domains, while the transition region of adjacent magnetic domains is a magnetic domain wall. Theoretical calculation shows that the spin waves have a bound-state solution in the magnetic domain wall, and the energy gap of the spin wave mode is zero in the case where only the exchange effect and the anisotropy of the magnetic crystal are considered. Due to this feature, the magnetic domain wall can serve as a spin wave channel for conducting the spin waves. Magnetization directions of the spin waves are perpendicular to the multiple superconducting qubit coils as shown in FIGS. 3, 4 and 6. It is to be noted that the magnetization directions of the spin waves may be parallel to the multiple superconducting qubit coils, as long as the coupling effect between the spin waves and the multiple superconducting qubit coils can be generated.

[0051] In one embodiment, a structural modification between adjacent magnetic domains, may be performed by using a manual method, for example, fabricating a trench or the like to pin the magnetic-domain wall to the boundary of the magnetic-domains.

[0052] In one embodiment, the formation and the magnetization direction of magnetic domains may be controlled through the applied magnetic field, and whether the magnetization directions of adjacent magnetic domains are the same or different can determine whether the magnetic domain wall exists between the magnetic domains. Only when the magnetization directions between adjacent magnetic-domain elements are different, does the magnetic domain wall, that is, the spin-wave channel, exists. Otherwise, no domain wall exists. The layout of the magnetic-domain wall varies with the arrangement of the magnetic domains, thus any spin-wave wiring mode can be obtained through editing of the arrangement of the magnetic domains and reconstruction can be performed between the magnetic domains.

[0053] In one embodiment, the driving apparatus 300 disposed below the magnetic film material 100 is a circuit board with a specific wiring mode, and is used for applying the magnetic field to the magnetic film material to drive one or more spin waves in the magnetic domain wall, that is, the spin wave channel.

[0054] In one embodiment, when the anisotropy of the magnetic crystal is uniaxial anisotropy, only a 180-degree magnetic domain wall exists in the material; and when the anisotropy of the magnetic crystal is biaxial or cubic anisotropy, a 90-degree or 180-degree magnetic domain wall exists in the material. A material with higher-fold symmetry may have more types of magnetic-domain walls.

[0055] In one embodiment, after the coupling between a first spin 101 and a first qubit 201 is implemented and the coupling between a second spin 102 and a second qubit 202 is implemented, the state change of the first qubit 201 in the superconducting qubit layer acts on the first spin 101 of the spin waves through interlayer coupling, and then the state change is transferred to the second spin 102 through the spin-wave traveling along the specific path of the spin wave channel. After that, the state change acts on the second qubit 202 through the inter-layer coupling. In this way, the coupling between the first spin 101 and the second spin 102 is established, and at the same time, the interaction between the first qubit 201 and the second qubit 202 is also established. The traveling path of the spin waves, that is, the path of the spin wave channel, may be controlled through the adjustment to the combination of the magnetization directions of the magnetic domains in the magnetic film material 100, so that the coupling between any two qubits can be implemented.

[0056] The qubit coupling system provided in the present disclosure adopts a structure where the superconducting qubit layer and the magnetic film material 100 layer are disposed in an upper layer and a lower layer respectively along the vertical direction. In the system, the driving apparatus 300 is used for applying the magnetic field to the magnetic film material to drive one or more spin waves in the magnetic domain wall, that is, the spin wave channel. In the system, the state change of the multiple qubits of the superconducting qubit layer is transferred through the spin waves of the magnetic film material 100 layer. The coupling between any two superconducting qubits is implemented through both the soft connection of the spin waves, and the coupling between the each superconducting qubit and the spin waves. At the same time, the magnitude of the coupling energy may be adjusted according to multiple methods, for example, an adjustment to the number density of spins in the magnetic domains in the magnetic film material 100, an adjustment to the distance between the multiple superconducting qubit coils and the magnetic film material 100, an adjustment to the magnetization directions or magnetization intensities of the magnetic domains in the magnetic film material 100, or the like. Moreover, the traveling path of the spin wave channel can be changed through an adjustment to the distribution mode of multiple magnetic domain elements, so that the coupling between any two superconducting qubits is further implemented.

[0057] The technical features of the above embodiments may be combined in any way. For conciseness, not all possible combinations of the technical features in the above embodiments are described. However, as long as the combinations of these technical features do not conflict, these combinations should be considered to be within the scope of the appended claims.

[0058] It is to be noted that for those skilled in the art, a number of improvements and modifications can be made without departing from the scope of the appended claims, and these improvements and modifications are within the scope of the appended claims. Therefore, the scope is solely defined by the appended claims.

Claims

1. A qubit coupling method, characterized by comprising: disposing (S100) a magnetic film material (100) below a multi-superconducting-qubit array (200), wherein the magnetic film material (100) is capable of implementing spin waves; forming (S200), through a combination of magnetization directions of magnetic domains in the magnetic film material (100), a plurality of spin wave channels through which the spin waves pass; disposing (S300) a plurality of qubits of the multi-superconducting-qubit array (200) above the plurality of spin wave channels through which the spin waves pass correspondingly to couple each of the plurality of qubits and at least one of the spin waves; and disposing (S400) at least two qubits of the plurality of qubits above one spin wave channel of the plurality of spin wave channels, and coupling two qubits of the at least two qubits through the one spin wave channel through which different spin waves coupled to the two qubits pass.

2. The qubit coupling method according to claim 1, further comprising: changing the plurality of spin wave channels through which the spin waves pass by changing the combination of the magnetization directions of the magnetic domains in the magnetic film material (100).

3. The qubit coupling method according to claim 1, wherein the spin waves at least comprise a first spin (101) and a second spin (102); the first spin (101) correspondingly acts on a first qubit (201) of the multi-superconducting-qubit array (200); and the second spin (102) correspondingly acts on a second qubit (202) of the multi-superconducting-qubit array (200).

4. The qubit coupling method according to claim 3, further comprising: coupling the first spin (101) and the first qubit (201); coupling the second spin (102) and the second qubit (202); and coupling the first qubit (201) and the second qubit (202) through one spin wave channel .

5. The qubit coupling method according to claim 4, further comprising: adjusting coupling energy of a plurality of superconducting qubit coils and the spin waves by adjusting a number density of the first spin (101) of the spin waves and a number density of the second spin (102) of the spin waves.

6. The qubit coupling method according to claim 5, further comprising: adjusting the coupling energy of the plurality of superconducting qubit coils and the spin waves by adjusting a vertical distance between the plurality of superconducting qubit coils and magnetic film material (100).

7. The qubit coupling method according to claim 5, further comprising: adjusting the coupling energy of the plurality of superconducting qubit coils and the spin waves by adjusting magnetization directions or magnetization intensities of the magnetic domains in the magnetic film material (100).

8. A qubit coupling system, characterized by comprising: a multi-superconducting-qubit array (200), which comprises a plurality of superconducting qubit coils; a magnetic film material (100), which is configured to form a plurality of spin wave channels by using magnetic domain walls between magnetic domains as waveguides, wherein the magnetic film material (100) is divided into a plurality of magnetic-domain elements; and a driving apparatus (300), which is configured to apply a magnetic field to the magnetic film material (100) to drive spin waves in the plurality of spin wave channels to change magnetization directions of the plurality of magnetic-domain elements, wherein the multi-superconducting-qubit array (200), the magnetic film material (100) and the driving apparatus (300) are sequentially disposed along a vertical direction.