Electronic device and quantum computing system

Abstract

An electronic device (1) for driving a capacitive load (15) is provided, comprising - an inductor (2), and - a variable capacitor (3) electrically conductively connected to the inductor (2), wherein - the inductor (2) comprises a superconducting material, and - the variable capacitor (3) is configured to change its capacitance. Further, a quantum computing system (21) is provided.

Description

[0001] Description

[0002] Electronic device and quantum computing system

[0003] The present disclosure relates to an electronic device and a quantum computing system .

[0004] Typically, a possible solution for reaching an AC voltage oscillating at radio frequencies , being typically in the range of MHz , for driving a capacitive load, the capacitive load is coupled to a typical radio frequency resonator, with a mostly inductive reactance , in order to use a resonant voltage build-up in the radio frequency resonator . A common approach is to use typical helical resonators made from an electrical conductor like copper .

[0005] However, i f the typical radio frequency resonator is arranged outside a cryostat and the capacitive load is arranged in a cryostat , a parasitic capacitance of the capacitive load and an ohmic resistance of wires between the typical radio frequency resonator outside the cryostat and the capacitive load is present . The parasitic capacitance and the ohmic resistance reduce a quality factor of the typical radio frequency resonator .

[0006] I f the typical radio frequency resonator is arranged in the cryostat , at typical radio frequencies , this can be problematic due to space constraints . Further, heat dissipation is much more problematic inside a cryostat .

[0007] Furthermore , with the capacitive load operated at cryogenic temperatures , due to changes in material resistivity and geometry, a linear electrical response of the typical radio frequency resonator components can substantially shift, making it difficult to impedance match a driving radio frequency source to the typical radio frequency resonator. The result is either most of the radio frequency power being reflected, which renders the capacitive load inoperable, or having to pre-compensate a shift in electrical response at room temperature, resulting in time-consuming iteration over many cooling cycles of the entire system.

[0008] An object to be solved is to provide an electronic device, which has improved electronic characteristics. Furthermore, a quantum computing system comprising such an electronic device is to be provided.

[0009] The object is solved by the subject matter of the independent claims. Advantageous embodiments, implementations and further developments are the subject matter of the respective dependent claims.

[0010] The electronic device for driving a capacitive load is described. In particular, the electronic device is configured to be arranged in a cryostat. For example, the capacitive load is arranged inside the cryostat or outside a cryostat. The electronic device is, for example, a passive electronic device. The passive electronic device, in particular, does not generate power in contrast to an active electronic device. This is that the passive electronic device cannot amplify a power of a signal, but the passive electronic device can increase a voltage or current of a signal. For example, the passive electronic device is a resonant circuit such as a resonator. The capacitive load is , for example , comprised by a further electronic device , such as an ion trap . The capacitive load comprises , for example , several electrically conductive elements . This is that the capacitive load comprises , for example , a parasitic capacitance . The parasitic capacitance originates in particular due to a proximity of the electrically conductive elements of the capacitive load .

[0011] In particular, the electronic device is configured for driving an ion trap in a cryostat .

[0012] For example , the cryostat is configured to provide a cryogenic environment . The electronic device and / or the capacitive load are in particular arranged within the cryogenic environment . The cryostat , in particular the cryogenic environment , is configured to cool the electronic device and / or the capacitive load to at most 50 K or at most 30 K and / or at least 0 . 1 mK or at least 0 . 3 mK .

[0013] According to at least one embodiment , the electronic device comprises an inductor . The inductor is in particular a passive electronic component of the passive electronic device . The inductor is , for example , configured to store and release electric energy . Exemplarily, the inductor is formed of a wire . In particular, the wire extends along a curve which emanates from a central part of the inductor, extending farther away as it revolves around the central part to an end part . Exemplarily, a strength of a magnetic field generated by the inductor, being in particular characteristic for an inductance value , is dependent on a number of turns of the inductor, a diameter of the inductor, and a material of the inductor . Exemplarily, the diameter of the inductor is dependent on a dielectric substrate of the inductor . For example, the number of turns is at least 3 and at most 50, e.g. approximately 10. The inductor has, for example, a predetermined inductance value of at least 0.001 pH or at least 0.1 pH and / or at most 50 pH or at most 10 pH, e.g. approximately 3 pH.

[0014] According to at least one embodiment, the electronic device comprises a variable capacitor electrically conductively connected to the inductor. For example, the variable capacitor is electrically conductively connected to the central part of the inductor.

[0015] For example, the inductor and the variable capacitor as well as the capacitive load form the resonant circuit, i.e. the resonator. The resonant circuit can be provided with an AC voltage .

[0016] According to at least one embodiment of the electronic device, the inductor comprises a superconducting material. The superconducting material is, for example, configured to carry an electric current without a resistance below a critical temperature. The superconducting material has, for example, a critical temperature of at least 3 K, at least 5 K or at least 10 K.

[0017] According to at least one embodiment of the electronic device, the variable capacitor is configured to change its capacitance. The variable capacitor can be provided with a DC voltage. In particular, the variable capacitor can be adjusted or varied within a predetermined capacity value range dependent on the DC voltage. The predetermined capacity value range can be at least 0.1 pF or at least 1 pF and / or at most 10 nF, at most 1 nF or at most 500 pF, e . g . approximately 15 pF .

[0018] It is an idea, inter alia, to form the resonant circuit of the electronic device with the superconducting inductor and the variable capacitor . Advantageously, with such a resonant circuit an AC voltage provided to the resonant circuit can be spectrally filtered of undesired sideband noise . The negligible ohmic losses of the superconducting material of the inductor allows for a compact design of the inductor for fitting inside a cryostat . Further, the superconducting material of the inductor provides a high quality factor of the resonant circuit - even in the presence of a comparatively large parasitic capacitance of the capacitive load . Advantageously, an impedance matching from the provided AC voltage to the resonant circuit is achieved via adj usting the variable capacitor via the provided DC voltage .

[0019] According to at least one embodiment of the electronic device , a first input is electrically conductively connected to a first node to which the inductor and the variable capacitor are electrically conductively connected . In particular, the node electrically conductively connects the first input , the inductor and the variable capacitor with one another .

[0020] For example , the first input is configured to provide the AC voltage oscillating at radio frequencies to the resonant circuit . The radio frequency is , for example , at least 1 MHz and at most 200 MHz , e . g . approximately 20 MHz . Exemplarily, the AC voltage is provided by an external AC voltage source . According to at least one embodiment of the electronic device , a second input is electrically conductively connected to the variable capacitor for providing a DC voltage to the variable capacitor by a DC voltage source . For example , the second input is configured to provide the DC voltage to the variable capacitor . This is , in particular, the second input is configured to be electrically conductively connected to a further signal line being connected to the DC voltage source .

[0021] According to at least one embodiment of the electronic device , an output is electrically conductively connected to the inductor . For example , the output is electrically conductively connected to the end part of the inductor .

[0022] In particular, the first input , the second input and / or the output are comprised by the electronic device . For example , the first input , the second input and / or the output each comprise a connector interface .

[0023] According to at least one embodiment of the electronic device , the first input is configured to be electrically conductively connected to a first signal line being connected to an AC voltage source . The first input is in particular electrically conductively connected to the first signal line via the connector interface .

[0024] According to at least one embodiment of the electronic device , the output is configured to be electrically conductively connected to a second signal line being connected to the capacitive load . The output is in particular electrically conductively connected to the second signal line via the connector interface . Alternatively, the output is itsel f a signal line being integrally connected to the second signal line .

[0025] Each of the signal lines is configured to carry a voltage , in particular the AC voltage .

[0026] According to at least one embodiment of the electronic device , the inductor comprises a superconducting alloy comprising at least the superconducting material . The superconducting alloy comprises , for example , at least two materials being di f ferent to one another .

[0027] According to at least one embodiment of the electronic device , the superconducting alloy comprises at least two of barium, copper oxide , yttrium, strontium, titanium, magnesium, boron, niobium . Exemplarily, the superconducting alloy comprises or consists of yttrium barium copper oxide .

[0028] According to at least one embodiment of the electronic device , the superconducting alloy has a critical temperature of at least 30 K . Exemplarily, the superconducting alloy has the critical temperature of at least 35 K, at least 39 K or at least 40 K . Additionally, the inductor with the superconducting alloy has a critical current density, which is at most 109A / cm2or at most 107A / cm2and / or at least 103A / cm2or at least 105A / cm2, approximately 2 * 106A / cm2. The critical current is the maximum amount of electrical current that can be carried by the inductor without a resistance .

[0029] According to at least one embodiment , the electronic device further comprises a dielectric substrate . The dielectric substrate is formed, exemplarily, by sapphire or magnesium oxide . The dielectric substrate extends within a main extension plane in lateral directions being perpendicular to a vertical direction . The dielectric substrate has in plan view along the vertical direction an outer shape being circular, elliptical or polygonal , such as squared outer shape or quadrangular outer shape . A maximal extent of the dielectric substrate in lateral directions is , for example , at least 10 mm and / or at most 100 mm, e . g . approximately 40 mm or 25 mm . The maximal extent in lateral directions can be a diameter or a side length . An extent of the dielectric substrate in vertical direction is , for example , at least 100 nm and / or at most 5 pm, approximately 350 nm or 1 pm .

[0030] Further, the variable capacitor extends within a main extension plane in lateral directions , spaced apart from the inductor and the dielectric substrate . Exemplarily, the variable capacitor is provided on a carrier, extending in lateral directions . The carrier is , for example , a printed circuit board .

[0031] According to at least one embodiment of the electronic device , the inductor is arranged on the dielectric substrate . Exemplarily, the inductor is in direct and immediate contact to the dielectric substrate . The inductor has a maximal extent in lateral directions being less than the maximal extent in lateral directions of the dielectric substrate . This is the inductor completely overlaps with the dielectric substrate in lateral directions , for example .

[0032] According to at least one embodiment of the electronic device , the inductor comprises at least one , in particular a single , planar wire . The planar wire is formed of the superconducting material , in particular the superconducting alloy . The planar wire extends , for example , in a common plane oriented in lateral directions. "Planar" means here and in the following that the planar wire comprises a length in lateral directions, a width in lateral directions and a height in vertical direction, wherein the height is, e.g., at least two orders of magnitude smaller than the width and / or the length. In particular, the height is smaller, e.g. at least 50 % smaller, than the extent of the dielectric substrate in vertical direction. The width of the planar wire is, for example, at least 0.5 mm and at most 5 mm, e.g. approximately 1 mm.

[0033] Exemplarily, the planar wire is covered with a coating. The coating comprises or consists of a noble metal, such as gold. The coating has a thickness, which is in particular smaller than a skin depth due to the skin effect at the AC voltage oscillating at the radio frequency indicated herein above.

[0034] According to at least one embodiment of the electronic device, the planar wire has a spiral shape. The planar wire has, in particular, in plan view the spiral shape. The spiral shape corresponds, for example, to the outer shape of the dielectric substrate. This is that the spiral shape is a circular spiral shape, an elliptical spiral shape or a polygonal spiral shape, such as a rectangular spiral shape.

[0035] According to at least one embodiment of the electronic device, the inductor comprises at least one, in particular a single, wire. The wire is formed of the superconducting material, in particular the superconducting alloy.

[0036] According to at least one embodiment of the electronic device, the wire is wound around a bobbin. Exemplarily, the wire is wound around the bobbin having several turns. For example , the wire is uni formly spaced along the bobbin . For example , the bobbin is configured to be a mechanical support structure for the wire .

[0037] According to at least one embodiment of the electronic device , the variable capacitor comprises at least two first capacitors and at least two electronic switches , each of the electronic switches are connected in series to one of the first capacitors forming a segment , and the segments are connected parallel to one another . This is that the variable capacitor is formed of a switchable capacitor array . The electronic switch is an electronic component , which in particular is configured to control a current flow in an input direction and an output direction . In particular, by using N segments , an N-bit capacitance control can be advantageously achieved .

[0038] Exemplarily, the switches are each formed of a bidirectional electronic switch . In particular, the bidirectional electronic switch is a metal-oxide-semiconductor field-ef fect transistor, MOSFET . Alternatively, the bidirectional electronic switch is a triode for alternating current , TRIAC or an electromechanical relay . This is that the bidirectional electronic switch can be switched dependent on a DC gate voltage , which is provided by the DC voltage source .

[0039] According to at least one embodiment of the electronic device , the variable capacitor comprises at one varactor diode and a DC voltage source , and the DC voltage source is connected in parallel to the varactor diode . The varactor diode has in particular a p-n j unction . The p-n j unction can further have a capacitance depending on a width of a space charge zone , which is in particular dependent to a DC voltage provided by the DC voltage source . This DC voltage is advantageously provided for controlling the capacitance of the varactor diode , and thus , an impedance matching between the first signal line and the capacitive load connected via the second signal line .

[0040] Exemplarily, the variable capacitor comprises at two varactor diodes . This is that the variable capacitor is formed of a varactor diodes array . With two varactor diodes being connected in anti-series , advantageously a non-linearity compensation can be achieved .

[0041] The varactor diode or the varactor diodes array further comprises , for example , further circuit elements , e . g . at least one further inductor and at least one resistance . The further circuit elements allow the DC voltage source to be connected to the varactor diode and controlling the capacitance , while simultaneously leaving the oscillating AC voltage in the resonant circuit unaf fected, as they are chosen such to have a high impedance . The further circuit elements advantageously ef fectively block and separate the DC voltage from the currents flowing in the resonant circuit , which the varactor diode is part of .

[0042] According to at least one embodiment , the electronic device comprises a housing, wherein the inductor and the variable capacitor are surrounded by the housing . The housing comprises in particular a top cover and a bottom cover opposite the top cover, both extending in lateral directions . The top cover and the bottom cover are connected by at least one side cover of the housing . The first input , the second input and / or the output are arranged and embedded within at least one cover. In particular, the first input, the second input and / or the output completely penetrate the housing.

[0043] According to at least one embodiment of the electronic device, the housing is formed of an electrically conductive material and / or a thermally conductive material, and the housing is configured to be thermally conductively connected to a cooling stage of the cryostat. The housing can comprise a metal. In this case, the housing comprises or consists, for example, of at least one of the metals: copper, aluminum, bronze, nickel.

[0044] The electrically conductive material has, for example, an electrical conductivity of at least 102 / (Ohm m) and at most 1012 / (Ohm m) . Further, the thermally conductive material has, for example, a thermal conductivity of at least 0.1 W / (m K) and at most 105W / (m K) .

[0045] According to at least one embodiment of the electronic device, the variable capacitor is spaced apart from the housing by first spacers. The variable capacitor, in particular the carrier, is spaced apart from at least one of the covers by the first spacers. The first spacers are, for example, part of the top cover and / or the bottom cover.

[0046] According to at least one embodiment of the electronic device, the inductor is spaced apart from the housing by second spacers. In particular, the dielectric substrate, is spaced apart from at least one of the covers. The second spacers are, for example, part of the top cover and / or the bottom cover. Each spacer is formed as a bar structure , wherein the bar structures are spaced apart from one another in lateral directions , for example . In particular, the bar structures extend in vertical direction . For example , the spacers are formed integrally with the housing, e . g . the spacers are formed in one piece with the housing . Alternatively, the spacers are provided on the top cover and / or the bottom cover .

[0047] Furthermore , a quantum computing system is speci fied, wherein the quantum computing system comprises an electronic device as described herein above . This is to say that the features concerning the quantum computing system are also applicable for the electronic device and vice versa .

[0048] According to at least one embodiment , the quantum computing system comprises an AC voltage source for generating a voltage oscillating at a frequency in a radio frequency range .

[0049] According to at least one embodiment , the quantum computing system comprises a cryostat with at least one cooling stage . The cooling stage is configured to provide the cryogenic environment .

[0050] According to at least one embodiment , the quantum computing system comprises an electronic device described herein above arranged in the cryostat and thermally connected to the cooling stage . Exemplarily, a cold finger of the cryostat , in particular of the cooling stage , is directly thermally connected to the housing . According to at least one embodiment , the quantum computing system comprises an ion trap arranged in the cryostat and thermally connected to the cooling stage . The ion trap is in particular a radio frequency ion trap, also called Paul trap, wherein an AC voltage oscillating at radio frequencies is being used to help trap ions in spatial dimensions . In order to provide the required voltages , which are typically too high for direct driving the ion trap by an RF ampli fier, the AC voltage source is connected to the ion trap via the electronic device .

[0051] According to at least one embodiment of the quantum computing system, the AC voltage source is electrically conductively connected to the electronic device by a first signal line .

[0052] According to at least one embodiment of the quantum computing system, the electronic device is electrically conductively connected to the ion trap by a second signal line .

[0053] According to at least one embodiment of the quantum computing system, a type of the first signal line is di f ferent from a type of the second signal line . In particular, the type of the first signal line is a coaxial cable and the type of the second signal line is a single wire .

[0054] According to at least one embodiment of the quantum computing system, the cryostat has at least two cooling stages , and the electronic device and the ion trap are thermally connected to the same cooling stage . In particular, the at least two cooling stages comprise a first cooling stage and a second cooling stage , wherein the second cooling stage is configured to be cooler than the first cooling stage , by at least 10 K or at least 20 K . Exemplarily, the electronic device and the ion trap are thermally connected to the second cooling stage .

[0055] According to at least one embodiment of the quantum computing system, the cryostat has at least two cooling stages , and the electronic device and the ion trap are thermally connected to di f ferent cooling stages . Exemplarily, the electronic device is thermally connected to the first cooling stage and the ion trap is thermally connected to the second cooling stage .

[0056] In the following, the electronic device and the quantum computing system is explained in more detail with reference to exemplary embodiments and the associated Figures .

[0057] Figure 1 shows a schematic view of the electronic device according to an exemplary embodiment .

[0058] Figures 2 and 3 each shows a schematic view of the variable capacitor of the electronic device according to an exemplary embodiment .

[0059] Figure 4 shows a quantum computing system according to an exemplary embodiment .

[0060] Elements that are identical , similar or have the same ef fect are given the same reference signs in the Figures . The Figures and the proportions of the elements shown in the figures are not to be regarded as true to scale . Rather, individual elements may be shown exaggeratedly large for better representability and / or for better comprehensibility .

[0061] The electronic device 1 according to the exemplary embodiment of Figure 1 comprises an inductor 2 , a variable capacitor 3 electrically conductively connected to the inductor 2 and a housing 10 . The inductor 2 and the variable capacitor 3 are completely surrounded by the housing 10 . Further, the inductor 2 comprises a superconducting material , in particular a superconducting alloy, and the variable capacitor 3 is configured to change its capacitance . In particular, the inductor 2 and the variable capacitor 3 as well as a capacitive load 15 form a resonant circuit .

[0062] In the housing 10 , a first input 4 , a second input 5 and an output 6 is arranged . The first input 4 is electrically conductively connected to a first node 7 , to which the inductor 2 and the variable capacitor 3 are electrically conductively connected . The output 6 is configured to be electrically conductively connected to a capacitive load 15 , which is in particular an ion trap . The first input 4 is configured to be connected to an AC voltage source 16 , which provides an AC voltage oscillating at radio frequencies to the resonant circuit . The second input 5 is configured to be connected to a DC voltage source 17 , which provides a DC voltage to the variable capacitor 3 .

[0063] The variable capacitor 3 according to the exemplary embodiment of Figure 2 is in particular the variable capacitor 3 according to the exemplary embodiment of Figure 1 . The variable capacitor 3 comprises a first varactor diode and a second varactor diode being electrically connected to one another in series . Anode regions of the varactor diodes 19 face one another and cathode regions of the varactor diodes 19 face away from one another . The variable capacitor 3 further comprises a DC voltage source 17 , which is connected in parallel to the varactor diodes 19 . The variable capacitor 3 further comprises further circuit elements , here three further inductors I and three resistances R, wherein portions, including one of the further inductors L and one of the resistances R connected in series, are connected parallel to one another.

[0064] In this embodiment, the varactor diodes 19 are arranged in series between two capacitors C2, which are optional components of the variable capacitor 3.

[0065] The variable capacitor 3 according to the exemplary embodiment of Figure 3 is in particular the variable capacitor 3 according to the exemplary embodiment of Figure 1. The variable capacitor 3 comprises four first capacitors Cl and four electronic switches 20. Each of the electronic switches 20 is connected in series to one of the first capacitors Cl forming a segment. Furthermore, the segments are connected parallel to one another.

[0066] Capacitance values of the first capacitors Cl can be different from one another. In particular, at least two or all of the capacitance values of the first capacitors Cl are different from one another. Advantageously, with such first capacitors Cl the highest possible tuning range can be covered at given bit depth. E.g. the capacitance values doubles for directly neighbouring first capacitors Cl. This is that the capacitance values are going up along the powers of 2. This is that the variable capacitance can be set with a relative accuracy of 1 / 2AN, where N is the number of electronic switches 20 implemented. In the exemplary embodiment shown in Figure 3, i.e. 1 / 2A4 = 1 / 16, which results in approximately 6 % relative setting accuracy. In this embodiment , the segments are arranged in series between two capacitors C3 , which are optional components of the variable capacitor 3 .

[0067] The quantum computing system 21 according to the exemplary embodiment of Figure 4 comprises an electronic device 1 according to Figure 1 , an AC voltage source 16 , a DC voltage source 17 , an ion trap and a cryostat 12 . The AC voltage source 16 is connected via a first signal line 8 to the first input 4 and the DC voltage source 17 is connected to the second input 5 . The output 6 of the electronic device 1 is connected via a second signal line 9 to the ion trap . The electronic device 1 and the ion trap are arranged within the cryostat 12 .

[0068] The electronic device 1 is thermally connected to a first cooling stage 13 of the cryostat 12 via a cold finger 11 and the ion trap is thermally connected to a second cooling stage 14 of the cryostat 12 .

[0069] The invention is not limited to the exemplary embodiments by their description . Rather, the invention encompasses any new feature as well as any combination of features , which in particular includes any combination of features in the claims , even i f this feature or combination itsel f is not explicitly indicated in the claims or exemplary embodiments . Reference signs

[0070] 1 electronic device

[0071] 2 inductor

[0072] 3 variable capacitor

[0073] 4 first input

[0074] 5 second input

[0075] 6 output

[0076] 7 first node

[0077] 8 first signal line

[0078] 9 second signal line

[0079] 10 housing

[0080] 11 cold finger

[0081] 12 cryostat

[0082] 13 first cooling stage

[0083] 14 first cooling stage

[0084] 15 capacitive load

[0085] 16 AC voltage source

[0086] 17 DC voltage source

[0087] 19 varactor diodes

[0088] 20 electronic switches

[0089] 21 quantum computing system

[0090] C1 . . C3 capacitors

[0091] I further inductor

[0092] R resistance

Claims

Claims1. Electronic device (1) for driving a capacitive load (15) , comprising- an inductor (2) , and- a variable capacitor (3) electrically conductively connected to the inductor (2) ,- a first input (4) electrically conductively connected to a first node (7) to which the inductor (2) and the variable capacitor (3) are electrically conductively connected,- a second input (5) electrically conductively connected to the variable capacitor (3) for providing a DC voltage to the variable capacitor (3) by a DC voltage source (17) , and- an output (6) electrically conductively connected to the inductor (2) , wherein- the inductor (2) comprises a superconducting material,- the variable capacitor (3) is configured to change its capacitance,- the first input (4) is configured to be electrically conductively connected to a first signal line (8) being connected to an AC voltage source (16) , and- the output (6) is configured to be electrically conductively connected to a second signal line (9) being connected to the capacitive load (15) .

2. Electronic device (1) according to claim 1, wherein,- the inductor (2) comprises a superconducting alloy comprising at least the superconducting material, and- the superconducting alloy comprises at least two of barium, copper oxide, yttrium, strontium, titanium, magnesium, boron, niobium.

3. Electronic device (1) according to claim 2, wherein, the superconducting alloy has a critical temperature of at least 30 K.

4. Electronic device (1) according to one of the claims 1 to 3, further comprising- a dielectric substrate, wherein- the inductor (2) is arranged on the dielectric substrate.

5. Electronic device (1) according to claim 4, wherein- the inductor (2) comprises at least one planar wire, and- the planar wire has a spiral shape, or- the inductor (2) comprises at least one wire, and- the wire is wound around a bobbin.

6. Electronic device (1) according to one of the claims 1 to5, wherein- the variable capacitor (3) comprises at least two first capacitors (Cl) and at least two electronic switches (20) ,- each of the electronic switches (20) is connected in series to one of the first capacitors (Cl) forming a segment,- the segments are connected parallel to one another.

7. Electronic device (1) according to one of the claims 1 to 5, wherein- the variable capacitor (3) comprises at least one varactor diode (19) and a DC voltage source (17) , and- the DC voltage source (17) is connected in parallel to the varactor diodes (19) .

8. Electronic device (1) according to one of the claims 1 to7, further comprising- a housing (10) , wherein- the inductor (2) and the variable capacitor (3) are surrounded by the housing (10) .

9. Electronic device (1) according to claim 8, wherein- the housing (10) is formed of an electrically conductive material and / or a thermally conductive material, and- the housing (10) is configured to be thermally conductively connected to a cooling stage of the cryostat (12) .

10. Electronic device (1) according to one of the claims 8 or 9, wherein- the variable capacitor (3) is spaced apart from the housing (10) by first spacers, and / or- the inductor (2) is spaced apart from the housing (10) by second spacers.

11. Quantum computing system (21) , comprising- an AC voltage source (16) for generating a voltage oscillating at a frequency in a radio frequency range,- a cryostat (12) with at least one cooling stage (13, 14) ,- an electronic device (1) according to one of the claims 1 to 7 arranged in the cryostat (12) and thermally connected to the cooling stage (13, 14) , and- an ion trap arranged in the cryostat (12) and thermally connected to the cooling stage (13, 14) , wherein- the AC voltage source (16) is electrically conductively connected to the electronic device (1) by a first signal line ( 8 ) , and- the electronic device (1) is electrically conductively connected to the ion trap by a second signal line (9) .

12. Quantum computing system (21) according to claim 11, wherein- a type of the first signal line (8) is different from a type of the second signal line (9) .

13. Quantum computing system (21) according to one of the claims 11 or 12, wherein- the cryostat (12) has at least two cooling stages (13, 14) , and- the electronic device (1) and the ion trap are thermally connected to the same cooling stage (13, 14) .

14. Quantum computing system (21) according to one of the claims 11 or 12, wherein- the cryostat (12) has at least two cooling stages (13, 14) , and- the electronic device (1) and the ion trap are thermally connected to different cooling stages (13, 14) .

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