Controllable sensing device and method

Abstract

A controllable sensing device is provided. The controllable sensing device includes a reaction terminal; a control transistor, including: a control terminal, configured to receive a control signal, a first conduction terminal, and a second conduction terminal; a sensing transistor, including: a sensing gate, a sensing source, and a sensing drain; and a readout terminal, configured to electrically connect to one of the sensing source and the sensing drain of the sensing transistor; wherein the reaction terminal electrically connected to one of the first conduction terminal and the second conduction terminal, and wherein the sensing gate electrically connected to the other one of the first conduction terminal and the second conduction terminal.

Description

CONTROLLABLE SENSING DEVICE AND METHODBACKGROUND OF THE INVENTION1. Field of the Invention

[0001] The present disclosure relates to a controllable sensing device and method, and in particular to a controllable sensing device and method using a control transistor as a switch of EGFET.2. Description of the Related Art

[0002] Sensing device for sensing and measurement of various chemical and biological reactions and identification are widely applied in the field of chemistry and biology.

[0003] One of such sensing devices is a Field-effect transistor (FET), which is a powerful biosensor with excellent sensitivity and specificity and has the advantages of low-cost, real-time, and label-free biosensing applications. By modifying the surface of FET with a probe to detect targets, such as nucleic acid and proteins, the sensing device can directly translate the signal of the target on the FET surface into an electronic signal.

[0004] One type of FET for biosensing is ion-sensitive field effect transistor, oftendenoted in the relevant literature as an ISFET. An ISFET is an impedance transformation device that operates in a manner similar to that of a MOSFET (Metal Oxide Semiconductor Field Effect Transistor), and is particularly configured to selectively measure ion activity in a solution.

[0005] Similar to the operation of MOSFET, the operation of ISFET is based on the charge concentration modulation (channel conductance) formed by a MOS capacitance formed by a polysilicon gate, a gate oxide and a region of the well (e.g., N-type well) between the source and the drain. For example, when a negative voltage is applied across the gate and source regions, a channel is created at the interface of the region and the gate oxide by depleting this area of electrons.

[0006] Another type of sensing device such an Extended-Gate Field-Effect Transistor, often denoted in the relevant literature as an EGFET, is based on the ISFET and implemented by connecting an extended gate to the gate of a MOSFET using a metal wire (or other material with conductive properties), to connect the sensing area to the gate of MOSFET(or also ISFET).

[0007] The main applications of EGFET are the detection of ionic species, pH, and specifically biological molecules such as antigens, cells, nucleic acids, and proteins, through the functionalization of sensing surfaces in sensing area contacted to theextended-gate of EGFET. By combining EGFET with other biomolecule / ion- sensitive recognition elements or materials, bio / ion sensing can be achieved.BRIEF SUMMARY OF THE INVENTION

[0008] However, due to the high sensitivity of the FET itself, the voltage of the gate affects the output signal of the FET, which can be used to sense low concentrations of biomolecules / ions. If the gate is affected by external noise during the measurement process, it will immediately cause a change in the output signal of the FET, which will result in a drift in the identification of output signal of the FET and will cause misjudgment.

[0009] When FET is combined with EG, the sensitivity is increased due to the larger surface area (sensing area), and when detecting low concentrations of biomolecules / ions, it is more affected by noise, so it is necessary to carry out a controllable mean for sensing device to avoid the influence of noise during the measurement process. In addition, since biological or chemical reactions may vary over time, it is important to control the timing of the measurement for high sensitivity sensing.

[0010] In order to effectively block noise interference during non-sensing periodsand to effectively control the sensing time window of biosensing, the present disclosure provides a controllable sensing device and method.

[0011] It is an objective of the present disclosure to provide a controllable sensing device. The controllable sensing device includes a reaction terminal; a control transistor, including: a control terminal, configured to receive a control signal, a first conduction terminal, and a second conduction terminal; a sensing transistor, including: a sensing gate, a sensing source, and a sensing drain; and a readout terminal, configured to electrically connect to one of the sensing source and the sensing drain of the sensing transistor; wherein the reaction terminal electrically connected to one of the first conduction terminal and the second conduction terminal, and wherein the sensing gate electrically connected to the other one of the first conduction terminal and the second conduction terminal.

[0012] In an embodiment, the magnitude of the control signal is variable.

[0013] In an embodiment, the conduction magnitude of the control transistor is variable according to the magnitude of the control signal.

[0014] In an embodiment, the duration of the control signal is variable.

[0015] In an embodiment, the duration for conducting the control transistor is variable according to the duration of the control signal.

[0016] In an embodiment, the second conduction terminal is directly electrically connected to the sensing gate.

[0017] In an embodiment, the control transistor is a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET), wherein the control terminal is a gate, and the first conduction terminal is one of a source and a drain of the MOSFET, and the second conduction terminal is the other one of the source and the drain of the MOSFET.

[0018] In an embodiment, the sensing transistor is an Extended Gate Field Effect Transistor (EGFET).

[0019] In an embodiment, the reaction terminal is configured to connect to a sample reaction zone for ion sensing.

[0020] In an embodiment, the controllable sensing device further includes: a capacitor, electrically connected to the sensing gate and connected in parallel with the sensing transistor.

[0021] In an embodiment, the control transistor is an N-MOSFET; the sensing transistor is an N-MOSFET; and the readout terminal electrically connected to the sensing drain.

[0022] In an embodiment, the controllable sensing device further includes: acapacitor, one terminal of which is electrically connected between the sensing gate and the second conduction terminal, and the other terminal of which is electrically connected to the sensing source.

[0023] In an embodiment, the controllable sensing device further includes: a ground terminal, electrically connected to the sensing source; and a voltage terminal, electrically connected to the sensing drain.

[0024] In an embodiment, the control transistor is a P-MOSFET; the sensing transistor is an N-MOSFET; and the readout terminal electrically connected to the sensing drain.

[0025] In an embodiment, the controllable sensing device further includes: a capacitor, one terminal of which is electrically connected between the sensing gate and the second conduction terminal, and the other terminal of which is electrically connected to the sensing source.

[0026] In an embodiment, the controllable sensing device further includes: a ground terminal, electrically connected to the sensing source; and a voltage terminal, electrically connected to the sensing drain.

[0027] In an embodiment, the control transistor is an N-MOSFET; the sensing transistor is a P-MOSFET; and the readout terminal electrically connected to thesensing drain.

[0028] In an embodiment, the controllable sensing device further includes: a capacitor, one terminal of which is electrically connected between the sensing gate and the second conduction terminal, and the other terminal of which is electrically connected to the sensing source.

[0029] In an embodiment, the controllable sensing device further includes: a voltage terminal, electrically connected to the sensing source.

[0030] In an embodiment, the control transistor is a P-MOSFET; the sensing transistor is a P-MOSFET; and the readout terminal electrically connected to the sensing drain.

[0031] In an embodiment, the controllable sensing device further includes: a capacitor, one terminal of which is electrically connected between the sensing gate and the second conduction terminal, and the other terminal of which is electrically connected to the sensing source.

[0032] In an embodiment, the controllable sensing device further includes: a voltage terminal, electrically connected to the sensing source.

[0033] It is another objective of the present disclosure to provide a controllable sensing method. The controllable sensing method includes steps of: providing areaction terminal; providing a control transistor, which including a control terminal, a first conduction terminal, and a second conduction terminal; providing a sensing transistor, which including a sensing gate, a sensing source, and a sensing drain; and receiving a control signal via the control terminal, for switching on / off sensing a signal change via a readout terminal, wherein the readout terminal configured to electrically connect to one of the sensing source and the sensing drain of the sensing transistor, wherein the reaction terminal electrically connected to one of the first conduction terminal and the second conduction terminal, and wherein the sensing gate electrically connected to the other one of the first conduction terminal and the second conduction terminal.

[0034] In an embodiment, the magnitude of the control signal is variable.

[0035] In an embodiment, the conduction magnitude of the control transistor is variable according to the magnitude of the control signal.

[0036] In an embodiment, the duration of the control signal is variable.

[0037] In an embodiment, the duration for conducting the control transistor is variable according to the duration of the control signal.

[0038] In an embodiment, the second conduction terminal is directly electrically connected to the sensing gate.

[0039] In an embodiment, the control transistor is a Metal-Oxide-SemiconductorField-Effect Transistor (MOSFET), wherein the control terminal is a gate, and the first conduction terminal is one of a source and a drain of the MOSFET, and the second conduction terminal is the other one of the source and the drain of the MOSFET.

[0040] In an embodiment, the sensing transistor is an Extended Gate Field Effect Transistor (EGFET).

[0041] In an embodiment, the reaction terminal is configured to connect to a sample reaction zone for ion sensing.

[0042] In an embodiment, the controllable sensing method further includes: providing a capacitor electrically connected to the sensing gate and connected in parallel with the sensing transistor.

[0043] In an embodiment, the control transistor is an N-MOSFET; the sensing transistor is an N-MOSFET; and the readout terminal electrically connected to the sensing drain.

[0044] In an embodiment, the controllable sensing method further includes: providing a capacitor, one terminal of which is electrically connected between the sensing gate and the second conduction terminal, and the other terminal of which iselectrically connected to the sensing source.

[0045] In an embodiment, the controllable sensing method further includes: providing a ground terminal, electrically connected to the sensing source; and providing a voltage terminal, electrically connected to the sensing drain.

[0046] In an embodiment, the control transistor is a P-MOSFET; the sensing transistor is an N-MOSFET; and the readout terminal electrically connected to the sensing drain.

[0047] In an embodiment, the controllable sensing method further includes: providing a capacitor, one terminal of which is electrically connected between the sensing gate and the second conduction terminal, and the other terminal of which is electrically connected to the sensing source.

[0048] In an embodiment, the controllable sensing method further includes: providing a ground terminal, electrically connected to the sensing source; and providing a voltage terminal, electrically connected to the sensing drain.

[0049] In an embodiment, the control transistor is an N-MOSFET; the sensing transistor is a P-MOSFET; and the readout terminal electrically connected to the sensing drain.

[0050] In an embodiment, the controllable sensing method further includes:providing a capacitor, one terminal of which is electrically connected between the sensing gate and the second conduction terminal, and the other terminal of which is electrically connected to the sensing source.

[0051] In an embodiment, the controllable sensing method further includes: providing a voltage terminal, electrically connected to the sensing source.

[0052] In an embodiment, the control transistor is a P-MOSFET; the sensing transistor is a P-MOSFET; and the readout terminal electrically connected to the sensing drain.

[0053] In an embodiment, the controllable sensing method further includes: providing a capacitor, one terminal of which is electrically connected between the sensing gate and the second conduction terminal, and the other terminal of which is electrically connected to the sensing source.

[0054] In an embodiment, the controllable sensing method further includes: providing a voltage terminal, electrically connected to the sensing source.BRIEF DESCRIPTION OF THE DRAWINGS

[0055] FIG. 1 illustrates a controllable sensing device according to an embodiment of the present disclosure.

[0056] FIG. 2 illustrates a controllable sensing device with a sample reaction zone according to an embodiment of the present disclosure.

[0057] FIG. 3 illustrates a controllable sensing device with a capacitor according to an embodiment of the present disclosure.

[0058] FIG. 4A illustrates a controllable sensing device with a N-type control transistor and N-type sensing transistor according to an embodiment of the present disclosure.

[0059] FIG. 4B illustrates a controllable sensing device with a N-type control transistor, N-type sensing transistor and a capacitor according to an embodiment of the present disclosure.

[0060] FIG. 4C illustrates a controllable sensing device with a N-type control transistor and N-type sensing transistor and illustrates the arrangement of a ground terminal and a voltage terminal according to an embodiment of the present disclosure.

[0061] FIG. 4D illustrates a controllable sensing device with a N-type control transistor, N-type sensing transistor and a capacitor and illustrates the arrangement of a ground terminal and a voltage terminal according to an embodiment of the present disclosure.

[0062] FIG. 5A illustrates a controllable sensing device with a P-type controltransistor and N-type sensing transistor according to an embodiment of the present disclosure.

[0063] FIG. 5B illustrates a controllable sensing device with a P-type control transistor, N-type sensing transistor and a capacitor according to an embodiment of the present disclosure.

[0064] FIG. 5C illustrates a controllable sensing device with a P-type control transistor and N-type sensing transistor and illustrates the arrangement of a ground terminal and a voltage terminal according to an embodiment of the present disclosure.

[0065] FIG. 5D illustrates a controllable sensing device with a P-type control transistor, N-type sensing transistor and a capacitor and illustrates the arrangement of a ground terminal and a voltage terminal according to an embodiment of the present disclosure.

[0066] FIG. 6A illustrates a controllable sensing device with a N-type control transistor and P-type sensing transistor according to an embodiment of the present disclosure.

[0067] FIG. 6B illustrates a controllable sensing device with a N-type control transistor, P-type sensing transistor and a capacitor according to an embodiment of the present disclosure.

[0068] FIG. 6C illustrates a controllable sensing device with a N-type control transistor and P-type sensing transistor and illustrates the arrangement of a voltage terminal according to an embodiment of the present disclosure.

[0069] FIG. 6D illustrates a controllable sensing device with a N-type control transistor, P-type sensing transistor and a capacitor and illustrates the arrangement of a voltage terminal according to an embodiment of the present disclosure.

[0070] FIG. 7A illustrates a controllable sensing device with a P-type control transistor and P-type sensing transistor according to an embodiment of the present disclosure.

[0071] FIG. 7B illustrates a controllable sensing device with a P-type control transistor, P-type sensing transistor and a capacitor according to an embodiment of the present disclosure.

[0072] FIG. 7C illustrates a controllable sensing device with a P-type control transistor and P-type sensing transistor and illustrates the arrangement of a voltage terminal according to an embodiment of the present disclosure.

[0073] FIG. 7D illustrates a controllable sensing device with a P-type control transistor, P-type sensing transistor and a capacitor and illustrates the arrangement of a voltage terminal according to an embodiment of the present disclosure.

[0074] FIG. 8 is a diagram showing a controllable sensing device 10 with some electrical nodes according to an embodiment of the present disclosure.

[0075] FIG. 8A is a diagram showing the simulation results of electrical changes of each node when the control signal is disable and the simulated bio-signal is disable according to an embodiment of the present disclosure.

[0076] FIG. 8B is a diagram showing the simulation results of electrical changes of each node when the control signal is disable and the simulated bio-signal is enable according to an embodiment of the present disclosure.

[0077] FIG. 8C is a diagram showing the simulation results of electrical changes of each node when the control signal is enable and the simulated bio-signal is disable according to an embodiment of the present disclosure.

[0078] FIG. 8D is a diagram showing the simulation results of electrical changes of each node when the control signal is enable and the simulated bio-signal is enable according to an embodiment of the present disclosure.

[0079] FIG. 9 is a diagram showing the simulation results of electrical changes of each node with capacitor according to an embodiment of the present disclosure.

[0080] FIG. 10 is a diagram showing the simulation results of electrical changes of each node with capacitor while applying noise according to an embodiment of thepresent disclosure.

[0081] FIG. 11A is a diagram showing the experiment results of sensing signal of pH4 standard solution by using the sensing transistor without the control transistor blocking the noise according to an embodiment of the present disclosure.

[0082] FIG. 1 IB is a diagram showing the experiment results of sensing signal of pH4 standard solution by using the sensing transistor with the control transistor blocking the noise according to an embodiment of the present disclosure.

[0083] FIG. 12A is a diagram showing the experiment results of sensing signal of pH7 standard solution by using the sensing transistor without the control transistor blocking the noise according to an embodiment of the present disclosure.

[0084] FIG. 12B is a diagram showing the experiment results of sensing signal of pH7 standard solution by using the sensing transistor with the control transistor blocking the noise according to an embodiment of the present disclosure.

[0085] FIG. 13A is a diagram showing the experiment results of sensing signal of pHlO standard solution by using the sensing transistor without the control transistor blocking the noise according to an embodiment of the present disclosure.

[0086] FIG. 13B is a diagram showing the experiment results of sensing signal of pHlO standard solution by using the sensing transistor with the control transistorblocking the noise according to an embodiment of the present disclosure.DETAILED DESCRIPTION OF THE INVENTION

[0087] To facilitate understanding of the objects, characteristics and effects of the present disclosure, embodiments together with the attached drawings for the detailed description of the present disclosure are provided.

[0088] In order to block noise interference during non-sensing periods, to control the sensing time window of biosensing and to avoid the noise affecting the real sensing signal from biological sample, the present disclosure provides a controllable sensing device and method by using a control transistor as a switch between the reaction terminal and the sensing transistor of an EGFET.

[0089] FIG. 1 is a drawing illustrating a controllable sensing device according to an embodiment of the present disclosure. As shown in FIG. 1, a controllable sensing device 10 includes a control transistor 100, a sensing transistor 200, a reaction terminal RT and a readout terminal VD. FIG. 2 illustrates a controllable sensing device 10 with a sample reaction zone SRZ according to an embodiment of the present disclosure.

[0090] The control transistor 100 includes a control terminal CtO, a first conductionterminal Ctl and a second conduction terminal Ct2. The control terminal CtO is configured to receive a control signal CTRL. The conductivity between the first conduction terminal Ctl and the second conduction terminal Ct2 is relied on the features (e.g. voltage magnitude) of the control signal CTRL applying to the control terminal CtO.

[0091] In some embodiments, the control transistor 100 is a Metal-Oxide- Semiconductor Field-Effect Transistor (MOSFET), wherein the control terminal CtO is a gate, the first conduction terminal Ctl is one of a source and a drain of the MOSFET, and the second conduction terminal Ct2 is the other one of the source and the drain of the MOSFET. In some embodiments, the control transistor 100 is a Bipolar Junction Transistor (BJT), wherein the control terminal CtO is a base, the first conduction terminal Ctl is one of an emitter and a collector of the BJT, and the second conduction terminal Ct2 is the other one of the emitter and the collector of the BJT. In some embodiments, the control transistor 100 is an Insulated-Gate Bipolar Transistor (IGBT), wherein the control terminal CtO is a gate, the first conduction terminal Ctl is one of an emitter and a collector of the IGBT, and the second conduction terminal Ct2 is the other one of the emitter and the collector of the IGBT.

[0092] The sensing transistor 200 includes a sensing gate SG, a sensing source SS and a sensing drain SD. The sensing transistor 200 is configured to change the conductive properties between the sensing source SS and the sensing drain SD based on sensing the electrical changes at the sensing gate SG.

[0093] In some embodiments, the sensing transistor 200 is an Ion-Sensitive Field-Effect Transistor (ISFET). In some embodiments, the sensing transistor 200 is an Extended Gate Field Effect Transistor (EGFET).

[0094] The reaction terminal RT is configured to electrically connect directly or indirectly to a sensing area which may contact to the solution of biological or chemical sample (or sensing target) to sense the changes in electrical properties while detecting the sensing target. In some embodiments, for example, the reaction terminal RT may connect to an electrode directly, or may connect to a wire connected to the electrode. The reaction terminal RT is configured to electrically connect to one of the first conduction terminal Ctl and the second conduction terminal Ct2, and the sensing gate SG is configured to electrically connect to the other one of the first conduction terminal Ctl and the second conduction terminal Ct2.

[0095] The readout terminal VD is configured to electrically connect to one of the sensing source SS and the sensing drain SD of the sensing transistor 200. The readoutterminal VD is configured to measure the minor change of electrical properties between sensing source SS and the sensing drain SD, for example, to measure the change signal of current through the sensing source SS and the sensing drain SD according to the ion concentration change sensing by the sensing gate SG.

[0096] With the structure shown in FIG. 1, by adding a control transistor 100 between the sensing transistor 200 and the reaction terminal RT, the reaction terminal RT may electrically connect to one of the first conduction terminal Ctl and the second conduction terminal Ct2, where the conductivity between which is controlled by the control signal CTRL via control terminal CtO, and the other one of the first conduction terminal Ctl and the second conduction terminal Ct2 may electrically connect to the sensing transistor 200 to transfer the signal from the reaction terminal RT to the sensing transistor 200. Thus, the control transistor 100 could act as a switch between the reaction terminal RT and the sensing transistor 200, and, act as a switch of the sensing process of the controllable sensing device 10.

[0097] In some embodiments, the magnitude of the control signal CTRL is variable.In some embodiments, the conduction magnitude of the control transistor 100 is variable according to the magnitude of the control signal CTRL. That is, the conductive properties between the first conduction terminal Ctl and the secondconduction terminal Ct2 could be variable according to the magnitude of the control signal CTRL, to make the control transistor 100 like an analog switch by tuning the control signal CTRL.

[0098] In some embodiments, the duration of the control signal is variable. In some embodiments, the duration for conducting the control transistor is variable according to the duration of the control signal. That is, the time window of sensing could be control precisely by tuning the enable time of control signal CTRL.

[0099] In some embodiments, the second conduction terminal Ct2 is directly electrically connected to the sensing gate SG without other electrical elements in between, which means there’s no other electric component connected in series between the second conduction terminal Ct2 and the sensing gate SG, but could provide other electric component connected in parallel.

[0100] Thus, the controllable sensing device 10 is able to isolate the sensing gateSG of the sensing transistor 200 from the reaction terminal RT. Comparing to conventional EGFET, the controllable sensing device 10 has some advantages at least as follow.

[0101] In real bio-sensing conditions, some environmental factors will affect the reaction terminal RT and / or the sample reaction zone SRZ to cause noise. By usingthe controllable sensing device 10 of the present disclosure, the noise from the reaction terminal RT can be easily blocked by the control transistor 100. Comparing to a conventional EGFET with a switch, the switch of conventional EGFET is provided at / between the drain / source terminal of the conventional EGFET to block the current flow through the drain / source terminal of the conventional EGFET, to achieve the goal of turning on or turning off the whole conventional EGFET. Moreover, most switch of conventional EGFET is provided in the peripheral circuit of the conventional EGFET to turn on / off the function of the conventional EGFET. However, the control transistor 100 of the controllable sensing device 10 is provided “in” the EGFET (between the reaction terminal RT and the sensing transistor 200), to block the noise from entering sensing gate SG of the sensing transistor 200, which achieve the goal of turning on / off the entering of input from the reaction terminal RT but not turning on / off the whole sensing transistor 200.

[0102] In some embodiments, the controllable sensing device 10 includes a noise detection module. For example, the noise detection module is configured to enable / disable the control signal CTRL to the control transistor 100 to “turn on / off’ the control transistor 100 via the control terminal CtO immediately once the noise is detected by noise detection module or other external circuit or device for detectingnoise, to block the influence of noise for subsequent bio-signal reading and analysis, where the control signal CTRL is enable / disable to turn on / off the control transistor 100 is depend on the element properties of the control transistor 100.

[0103] In some embodiments, the control signal CTRL is sent by other device, circuit or module. The control signal CTRL could be sent by some device or circuit coupling to the control terminal CtO, for example, such as some clock circuit, remote control module, data acquisition module, synchronization circuit, etc.

[0104] With the control transistor 100 provide between the sensing gate SG of the sensing transistor 200 and the reaction terminal, the control transistor 100 could act as a switch of input signal from sensing target to the sensing transistor 200. In addition, due to the magnitude and / or the duration of the control signal CTRL is variable, the conduction magnitude and / or the duration of the control transistor 100 is also variable according the control signal CTRL. Thus, it is possible to interact with the control transistor 100 in terms of both conductance and turn-on time, or to control only the conductance or turn-on time alone according to different scenario of sensing application. For example, it is possible to achieve specific sensing of different biomolecule detection characteristics and improving the accuracy of the detection with the sensing window control by control transistor 100, and it is alsopossible to achieve an analog switch for sensing but not a digital switch.

[0105] In some embodiments, the materials of reaction terminal RT or the materials between the sensing gate SG and the reaction terminal RT could be a metal wire or other or other material with conductive properties, which is capable of setting the control transistor 100 in between.

[0106] In some embodiments, the reaction terminal RT is configured to connect to a sample reaction zone SRZ for ion sensing, shown in FIG. 2. The sample reaction zone SRZ could be a sensing area and is suitable for ion sensing. In some embodiments, the sample reaction zone SRZ may be a chamber containing solution, which containing target sample S such as probe, biomolecules, chemical, etc.

[0107] FIG. 3 illustrates a controllable sensing device with a capacitor according to an embodiment of the present disclosure.

[0108] In some embodiments, the controllable sensing device 10 includes a capacitor C. The capacitor C is configured to electrically connect to the sensing gate SG and connected in parallel with the sensing transistor 200, as shown in FIG. 3.

[0109] In some embodiments, the controllable sensing device 10 further includes several capacitors C electrically connected to the sensing gate SG and connected in parallel with the sensing transistor 200.

[0110] With the structure shown in FIG. 3, the at least one capacitor C in parallel with the sensing transistor 200 and one terminal of the capacitor C is electrically connected to the sensing gate SG, the at least one capacitor C provides a charge conversion function, which ensures that a stable input signal (from reaction terminal RT via the turning-on control transistor 100) can be provided for a period of time after the control sensor 100 is turned off, to ensure that the original signal (the input signal from reaction terminal RT when the control transistor 100 is turned on) continues to be output to the sensing gate SG and be sensed by the sensing transistor 200. That is, the at least one capacitor C is able to maintain the signal for sensing transistor 200 from the reaction terminal RT for a certain period even if the control transistor 100 is turned off. In some embodiments, the certain period is determined by the parameters of the capacitor C.

[0111] FIG. 4A illustrates a controllable sensing device with a N-type control transistor and N-type sensing transistor according to an embodiment of the present disclosure.

[0112] In some embodiments, the control transistor 100 is an N-MOSFET (N-type MOSFET) and the sensing transistor 200 is an N-MOSFET (N-type MOSFET). Accordingly, the control terminal CtO is a control gate CG, the first conductionterminal Ctl is a control drain CD, and the second conduction terminal Ct2 is a control source CS. The control drain CD is electrically connected to the reaction terminal RT. The control gate CG is configured to receive the control signal CTRL. The control source CS is electrically connected to the sensing gate SG of the sensing transistor 200. The readout terminal VD is electrically connected to the sensing drainSD. Due to the control transistor 100 and the sensing transistor 200 is an N-MOSFET, there is a control base CB and sensing base SB connected to a ground GND.

[0113] FIG. 4B illustrates a controllable sensing device with a N-type control transistor, N-type sensing transistor and a capacitor according to an embodiment of the present disclosure.

[0114] In some embodiments, the controllable sensing device 10 shown in FIG. 4A further includes a capacitor C. One terminal of the capacitor C is electrically connected between the sensing gate SG and the second conduction terminal Ct2 (also control source CS in the embodiment), and the other terminal of the capacitor C is electrically connected to the sensing source SS. In some embodiments, the controllable sensing device 10 further includes several capacitors C electrically connected in parallel between the sensing gate SG and the sensing source SS.

[0115] FIG. 4C illustrates a controllable sensing device with a N-type controltransistor and N-type sensing transistor and illustrates the arrangement of a ground terminal and a voltage terminal according to an embodiment of the present disclosure.

[0116] In some embodiments, the controllable sensing device 10 includes a ground terminal GND electrically connected to the sensing source SS, and a voltage terminal VDD electrically connected to the sensing drain SD. In some embodiments, the controllable sensing device 10 includes a resistor (not shown) provided between the sensing drain SD and the voltage terminal VDD.

[0117] FIG. 4D illustrates a controllable sensing device with a N-type control transistor, N-type sensing transistor and a capacitor and illustrates the arrangement of a ground terminal and a voltage terminal according to an embodiment of the present disclosure.

[0118] In some embodiments, the controllable sensing device 10 includes at least one capacitor C, one terminal of which is electrically connected between the sensing gate SG and the control source CS and the other terminal of which is electrically connected to the sensing source SS, a ground terminal GND electrically connected to the sensing source SS and the control base CB and the capacitor C, a voltage terminal VDD electrically connected to the sensing drain SD, and a resistor (not shown) provided between the sensing drain SD and the voltage terminal VDD.

[0119] FIG. 5A illustrates a controllable sensing device with a P-type control transistor and N-type sensing transistor according to an embodiment of the present disclosure.

[0120] In some embodiments, the control transistor 100 is an P-MOSFET (P-type MOSFET) and the sensing transistor 200 is an N-MOSFET (N-type MOSFET). Accordingly, the control terminal CtO is a control gate CG, the first conduction terminal Ctl is a control source CS, and the second conduction terminal Ct2 is a control drain CD. The control source CS is electrically connected to the reaction terminal RT. The control gate CG is configured to receive the control signal CTRL. The control drain CD is electrically connected to the sensing gate SG of the sensing transistor 200. The readout terminal VD is electrically connected to the sensing drain SD. Due to the control transistor 100 is an P-MOSFET, there is a control base CB connected to a voltage terminal VDD.

[0121] FIG. 5B illustrates a controllable sensing device with a P-type control transistor, N-type sensing transistor and a capacitor according to an embodiment of the present disclosure.

[0122] In some embodiments, the controllable sensing device 10 shown in FIG. 4A further includes a capacitor C. One terminal of the capacitor C is electricallyconnected between the sensing gate SG and the second conduction terminal Ct2 (also control drain CD in the embodiment), and the other terminal of the capacitor C is electrically connected to the sensing source SS. In some embodiments, the controllable sensing device 10 further includes several capacitors C electrically connected in parallel between the sensing gate SG and the sensing source SS.

[0123] FIG. 5C illustrates a controllable sensing device with a P-type control transistor and N-type sensing transistor and illustrates the arrangement of a ground terminal and a voltage terminal according to an embodiment of the present disclosure.

[0124] In some embodiments, the controllable sensing device 10 includes a ground terminal GND electrically connected to the sensing source SS, and a voltage terminal VDD electrically connected to the sensing drain SD. In some embodiments, the controllable sensing device 10 includes a resistor (not shown) provided between the sensing drain SD and the voltage terminal VDD.

[0125] FIG. 5D illustrates a controllable sensing device with a P-type control transistor, N-type sensing transistor and a capacitor and illustrates the arrangement of a ground terminal and a voltage terminal according to an embodiment of the present disclosure.

[0126] In some embodiments, the controllable sensing device 10 includes at leastone capacitor C, one terminal of which is electrically connected between the sensing gate SG and the control drain CD and the other terminal of which is electrically connected to the sensing source SS, a ground terminal GND electrically connected to the sensing source SS and the capacitor C, a voltage terminal VDD electrically connected to the sensing drain SD, and a resistor (not shown) provided between the sensing drain SD and the voltage terminal VDD.

[0127] FIG. 6A illustrates a controllable sensing device with a N-type control transistor and P-type sensing transistor according to an embodiment of the present disclosure.

[0128] In some embodiments, the control transistor 100 is an N-MOSFET (N-typeMOSFET) and the sensing transistor 200 is an P-MOSFET (P-type MOSFET). Accordingly, the control terminal CtO is a control gate CG, the first conduction terminal Ctl is a control drain CD, and the second conduction terminal Ct2 is a control source CS. The control drain CD is electrically connected to the reaction terminal RT. The control gate CG is configured to receive the control signal CTRL. The control source CS is electrically connected to the sensing gate SG of the sensing transistor 200. The readout terminal VD is electrically connected to the sensing drain SD. Due to the control transistor 100 is an N-MOSFET, there is a control base CBconnected to a ground GND.

[0129] FIG. 6B illustrates a controllable sensing device with a N-type control transistor, P-type sensing transistor and a capacitor according to an embodiment of the present disclosure.

[0130] In some embodiments, the controllable sensing device 10 shown in FIG. 4A further includes a capacitor C. One terminal of the capacitor C is electrically connected between the sensing gate SG and the second conduction terminal Ct2 (also control source CS in the embodiment), and the other terminal of the capacitor C is electrically connected to the sensing source SS. In some embodiments, the controllable sensing device 10 further includes several capacitors C electrically connected in parallel between the sensing gate SG and the sensing source SS.

[0131] FIG. 6C illustrates a controllable sensing device with a N-type control transistor and P-type sensing transistor and illustrates the arrangement of a voltage terminal according to an embodiment of the present disclosure.

[0132] In some embodiments, the controllable sensing device 10 includes a voltage terminal VDD electrically connected to the sensing source SS. In some embodiments, the controllable sensing device 10 includes a resistor (not shown) provided between the sensing source SS and the voltage terminal VDD.

[0133] FIG. 6D illustrates a controllable sensing device with a N-type control transistor, P-type sensing transistor and a capacitor and illustrates the arrangement of a voltage terminal according to an embodiment of the present disclosure.

[0134] In some embodiments, the controllable sensing device 10 includes at least one capacitor C, one terminal of which is electrically connected between the sensing gate SG and the control source CS and the other terminal of which is electrically connected to the sensing source SS, a voltage terminal VDD electrically connected to the sensing source SS, and a resistor (not shown) provided between the sensing soure SS and the voltage terminal VDD.

[0135] FIG. 7A illustrates a controllable sensing device with a P-type control transistor and P-type sensing transistor according to an embodiment of the present disclosure.

[0136] In some embodiments, the control transistor 100 is an P-MOSFET (P-type MOSFET) and the sensing transistor 200 is an P-MOSFET (P-type MOSFET). Accordingly, the control terminal CtO is a control gate CG, the first conduction terminal Ctl is a control source CS, and the second conduction terminal Ct2 is a control drain CD. The control source CS is electrically connected to the reaction terminal RT. The control gate CG is configured to receive the control signal CTRL.The control drain CD is electrically connected to the sensing gate SG of the sensing transistor 200. The readout terminal VD is electrically connected to the sensing drain SD. Due to the control transistor 100 is an P-MOSFET, there is a control base CB connected to a voltage terminal VDD.

[0137] FIG. 7B illustrates a controllable sensing device with a P-type control transistor, P-type sensing transistor and a capacitor according to an embodiment of the present disclosure.

[0138] In some embodiments, the controllable sensing device 10 shown in FIG. 4A further includes a capacitor C. One terminal of the capacitor C is electrically connected between the sensing gate SG and the second conduction terminal Ct2 (also control drain CD in the embodiment), and the other terminal of the capacitor C is electrically connected to the sensing source SS. In some embodiments, the controllable sensing device 10 further includes several capacitors C electrically connected in parallel between the sensing gate SG and the sensing source SS.

[0139] FIG. 7C illustrates a controllable sensing device with a P-type control transistor and P-type sensing transistor and illustrates the arrangement of a voltage terminal according to an embodiment of the present disclosure.

[0140] In some embodiments, the controllable sensing device 10 includes a voltageterminal VDD electrically connected to the sensing source SS. In some embodiments, the controllable sensing device 10 includes a resistor (not shown) provided between the sensing source SS and the voltage terminal VDD.

[0141] FIG. 7D illustrates a controllable sensing device with a P-type control transistor, P-type sensing transistor and a capacitor and illustrates the arrangement of a voltage terminal according to an embodiment of the present disclosure.

[0142] In some embodiments, the controllable sensing device 10 includes at least one capacitor C, one terminal of which is electrically connected between the sensing gate SG and the control drain CD and the other terminal of which is electrically connected to the sensing source SS, a voltage terminal VDD electrically connected to the sensing source SS, and a resistor (not shown) provided between the sensing source SS and the voltage terminal VDD.

[0143] FIG. 8 is a diagram showing a controllable sensing device 10 with some electrical nodes according to an embodiment of the present disclosure. In some embodiments based on FIG. 3, the controllable sensing device 10 includes a capacitorC which is electrically connected in parallel between the sensing gate SG and the sensing source SS, and a resistor R electrically connected between the voltage terminal VDD and the readout terminal VD, as shown in FIG. 8. In the embodiment,the control transistor 100 is an N-type transistor and the sensing transistor 200 is also an N-type transistor. Node VC shows the voltage from reaction terminal RT via control transistor 100, meanwhile the voltage at node VC is the voltage of the sensing gate SG of the sensing transistor 200. The voltage at the node VC will affect the signal sensed by the sensing transistor 200 and could be measured by the readout terminal VD. The voltage at node VC could be equivalently conversed by the capacitor C. The readout terminal VD is electrically connected to the sensing drain SD and acts as a main indicator for the measurement of signal change and an output signal of the controllable sensing device 10.

[0144] FIG. 8A to 8D are diagrams showing the simulation results of electrical changes of each node according to an embodiment shown in FIG. 8 according to the present disclosure. The I_R1 is the current through the resistor R, which is equal to the current through the sensing transistor 200, and could act as an output current of the controllable sensing device 10. V Ctrl is the voltage of control signal CTRL, which is configured to act as a switch of the control transistor 100 and control the conduction between reaction terminal RT and the sensing transistor 200. V GATE is the voltage applied on the reaction terminal RT to simulate the signal change (e.g. ion concentration change or other bio-signal change) occur at reaction terminal RT.The V GATE described here is named from the perspective from the sensing transistor 200 but not from the control transistor 100, thus the V GATE is applied on the control drain CD but not control gate CG. V_VC is the voltage from reaction terminal RT via control transistor 100 and also the voltage of the sensing gate SG. V_VD is the main indicator for the measurement of signal change from the signal change occur at reaction terminal RT.

[0145] FIG. 8A is a diagram showing the simulation results of electrical changes of each node when the control signal is disable (V_Ctrl=0V) and the simulated biosignal is disable (V_GATE=0V) according to an embodiment of the present disclosure.

[0146] As the simulation results shown in FIG. 8A, FIG. 8A shows the simulation results based on the structure of FIG. 8. When V_GATE=0V and V_Ctrl=0V, the changes of each voltage and output current are shown in FIG. 8A. Since there is no signal input from V GATE (simulated as no bio-signal or noise from reaction terminal RT), the main measurement index V_VD is not affected as expected (theNMOS characteristics of the control transistor 100 lead to very small changes in VC and I_R1 , but the effect on V_VD is negligible).

[0147] FIG. 8B is a diagram showing the simulation results of electrical changes ofeach node when the control signal is disable (V_Ctrl=0V) and the simulated bio- signal is enable (V_GATE=3 V) according to an embodiment of the present disclosure.

[0148] As the simulation results shown in FIG. 8B, FIG. 8B shows the simulation results based on the structure of FIG. 8. When V_GATE=3V but V_Ctrl=0V, the changes of each voltage and output current are shown in FIG. 8B. The input signal from V GATE (simulated as bio-signal or noise from reaction terminal RT) cannot pass through the control transistor 100, and the main measurement index V_VD is not affected as expected (the NMOS leakage current of control transistor 100 causes a very slight change of VC, I_R1 , but the effect on V_VD is negligible).

[0149] FIG. 8C is a diagram showing the simulation results of electrical changes of each node when the control signal is enable (V_Ctrl=3 V) and the simulated bio-signal is disable (V_GATE=0V) according to an embodiment of the present disclosure.

[0150] As the simulation results shown in FIG. 8C, FIG. 8C shows the simulation results based on the structure of FIG. 8. When V_GATE=0V and V_Ctrl=3V, the changes of each voltage and output current are shown in FIG. 8C. The electronic channel (control transistor 100) of the sensing transistor 200 is open, V GATE and VC are the same as 0V, the main measurement index V_VD is not affected as expected (VC and I_R1 have a very slight change, but the effect on V_VD isnegligible).

[0151] FIG. 8D is a diagram showing the simulation results of electrical changes of each node when the control signal is enable (V_Ctrl=3V) and the simulated biosignal is enable (V_GATE=3 V) according to an embodiment of the present disclosure.

[0152] As the simulation results shown in FIG. 8D, FIG. 8D shows the simulation results based on the structure of FIG. 8. When V_GATE=0-3V and V_Ctrl=3V, the changes of each voltage and output current are shown in FIG. 8D. The V GATE signal can smoothly affect V_VC via the control transistor 100 within a certain range (below 2.3V), and further cause the current I_R1 of the sensing transistor 200 to increase linearly as expected. The main measurement index V_VD decreases linearly as expected, thus the sensing and the measurement of signal from reaction terminal RT can be achieved.

[0153] FIG. 9 is a diagram showing the simulation results of electrical changes of each node with capacitor C according to an embodiment of the present disclosure.

[0154] As the simulation results shown in FIG. 9, in order to demonstrate that the controllable sensing device 10 according to the present disclosure can be operated continuously and that the main measurement index V_VD can be maintained without interruption for a period of time after the control transistor 100 is turned off by usingthe capacitor C, FIG. 9 shows the simulation results based on the structure of FIG. 8 in a simulation with different combinations of V GATE and V Ctrl in sequence.

[0155] With the combination of V GATE and V Ctrl turning on / off. It can be observed that the changes are consistent with the results of the individual simulations in FIGS. 8A to 8D as shown above, and it can be further observed that when V_Ctrl=0 (i.e., when the control transistor 100 is turned off as a switch), the capacitor C is already charged, so after the control transistor 100 is turned off, the capacitor C continues to be discharged, so that the V_VC can be maintained (slowly discharged) and the sensing transistor 200 thus continues to act, and I RA, V_VD will continue to exist and can be measured.

[0156] FIG. 10 is a diagram showing the simulation results of electrical changes of each node with capacitor while applying noise according to an embodiment of the present disclosure.

[0157] As the simulation results shown in FIG. 10, in order to further demonstrate that the controllable sensing device 10 according to the present disclosure can isolate the noise interference from V GATE at a specific time and sense it at a specific time according to the need, FIG. 9 shows the simulation results based on the structure of FIG. 8 in a simulation with different combinations of V GATE and V Ctrl and noisein sequence.

[0158] As shown in FIG. 10, at the time of 1.2m on the horizontal axis, the voltage change of V GATE is no longer transferred to V_VC after V Ctrl disabling the control transistor 100 (block the signal from reaction terminal RT), but due to the continuous supply of capacitor C, the sensing transistor 200 continues to act so that the voltage and change of V_VD can be measured; at the time of 11.6m on the horizontal axis, the voltage of V GATE stabilizes, and the control transistor 100 is turned on again by the voltage provide by V Ctrl, then the signal of V_VD will be realigned with V GATE as expected.

[0159] FIG. 11A is a diagram showing the experiment results of sensing signal of pH4 standard solution by using the sensing transistor without the control transistor blocking the noise according to an embodiment of the present disclosure.

[0160] FIG. 1 IB is a diagram showing the experiment results of sensing signal of pH4 standard solution by using the sensing transistor with the control transistor blocking the noise according to an embodiment of the present disclosure.

[0161] FIG. 12A is a diagram showing the experiment results of sensing signal of pH7 standard solution by using the sensing transistor without the control transistor blocking the noise according to an embodiment of the present disclosure.

[0162] FIG. 12B is a diagram showing the experiment results of sensing signal of pH7 standard solution by using the sensing transistor with the control transistor blocking the noise according to an embodiment of the present disclosure.

[0163] FIG. 13A is a diagram showing the experiment results of sensing signal of pHlO standard solution by using the sensing transistor without the control transistor blocking the noise according to an embodiment of the present disclosure.

[0164] FIG. 13B is a diagram showing the experiment results of sensing signal of pHlO standard solution by using the sensing transistor with the control transistor blocking the noise according to an embodiment of the present disclosure.

[0165] In some embodiments, the experiment results of sensing signal of pH 4 / 7 / 10 standard solution is acquired by integrated the controllable sensing device 10 in a known Source Follow circuit or known Wheatstone bridge circuit to transform the output signal read from the EGFET (the sensing transistor of the controllable sensing device) into linear. The pH 4 / 7 / 10 standard solution was purchased from Merck. The features of output signal of different pH standard solution sample could be identified by determining the falling edge, for example at the point voltage=l .

[0166] As the experiment results shown in FIG. 11 A, 12A and 13 A, while applying noise signal around 0.8V to the input terminal, the output signal is affected by thenoise without the control transistor blocking the noise.

[0167] In comparison, as the experiment results shown in FIG. 1 1B, 12B and 13B, while also applying noise signal around 0.8V to the input terminal, the output signal is not affected by the noise with the control transistor blocking the noise. Thus the output signal of pH 4 / 7 / 10 standard solutions are able to be measured by reducing the influence from noise with the control transistor of the present disclosure.

[0168] The present disclosure further provides a controllable sensing method. The controllable sensing method includes steps of: providing a reaction terminal; providing a control transistor, which including a control terminal, a first conduction terminal, and a second conduction terminal; providing a sensing transistor, which including a sensing gate, a sensing source, and a sensing drain; and receiving a control signal via the control terminal, for switching on / off sensing a signal change via a readout terminal, wherein the readout terminal configured to electrically connect to one of the sensing source and the sensing drain of the sensing transistor, wherein the reaction terminal electrically connected to one of the first conduction terminal and the second conduction terminal, and wherein the sensing gate electrically connected to the other one of the first conduction terminal and the second conduction terminal.

[0169] In some embodiments, the magnitude of the control signal is variable. The conduction magnitude of the control transistor is variable according to the magnitude of the control signal.

[0170] In some embodiments, the duration of the control signal is variable. The duration for conducting the control transistor is variable according to the duration of the control signal.

[0171] In some embodiments, the second conduction terminal is directly electrically connected to the sensing gate.

[0172] In some embodiments, the control transistor is a Metal-Oxide- Semiconductor Field-Effect Transistor (MOSFET), wherein the control terminal is a gate, and the first conduction terminal is one of a source and a drain of the MOSFET, and the second conduction terminal is the other one of the source and the drain of the MOSFET. In some embodiments, the sensing transistor is an Extended Gate Field Effect Transistor (EGFET).

[0173] In some embodiments, the reaction terminal is configured to connect to a sample reaction zone for ion sensing.

[0174] In some embodiments, the controllable sensing method further includes: providing a capacitor electrically connected to the sensing gate and connected inparallel with the sensing transistor.

[0175] In some embodiments, the control transistor is an N-MOSFET; the sensing transistor is an N-MOSFET; and the readout terminal electrically connected to the sensing drain.

[0176] In some embodiments, the controllable sensing method further includes: providing a capacitor, one terminal of which is electrically connected between the sensing gate and the second conduction terminal, and the other terminal of which is electrically connected to the sensing source.

[0177] In some embodiments, the controllable sensing method further includes: providing a ground terminal, electrically connected to the sensing source; and providing a voltage terminal, electrically connected to the sensing drain.

[0178] In some embodiments, the control transistor is a P-MOSFET; the sensing transistor is an N-MOSFET; and the readout terminal electrically connected to the sensing drain.

[0179] In some embodiments, the controllable sensing method further includes: providing a capacitor, one terminal of which is electrically connected between the sensing gate and the second conduction terminal, and the other terminal of which is electrically connected to the sensing source.

[0180] In some embodiments, the controllable sensing method further includes: providing a ground terminal, electrically connected to the sensing source; and providing a voltage terminal, electrically connected to the sensing drain.

[0181] In some embodiments, the control transistor is an N-MOSFET; the sensing transistor is a P-MOSFET; and the readout terminal electrically connected to the sensing drain.

[0182] In some embodiments, the controllable sensing method further includes: providing a capacitor, one terminal of which is electrically connected between the sensing gate and the second conduction terminal, and the other terminal of which is electrically connected to the sensing source.

[0183] In some embodiments, the controllable sensing method further includes: providing a voltage terminal, electrically connected to the sensing source.

[0184] In some embodiments, the control transistor is a P-MOSFET; the sensing transistor is a P-MOSFET; and the readout terminal electrically connected to the sensing drain.

[0185] In some embodiments, the controllable sensing method further includes: providing a capacitor, one terminal of which is electrically connected between the sensing gate and the second conduction terminal, and the other terminal of which iselectrically connected to the sensing source.

[0186] In some embodiments, the controllable sensing method further includes: providing a voltage terminal, electrically connected to the sensing source.

[0187] While the present disclosure has been described by means of specific embodiments, numerous modifications and variations could be made thereto by those skilled in the art without departing from the scope and spirit of the present disclosure set forth in the claims.

Claims

WHAT IS CLAIMED IS:

1. A controllable sensing device, comprising: a reaction terminal; a control transistor, including: a control terminal, configured to receive a control signal, a first conduction terminal, and a second conduction terminal; a sensing transistor, including: a sensing gate, a sensing source, and a sensing drain; and a readout terminal, configured to electrically connect to one of the sensing source and the sensing drain of the sensing transistor; wherein the reaction terminal electrically connected to one of the first conduction terminal and the second conduction terminal, and wherein the sensing gate electrically connected to the other one of the first conduction terminal and the second conduction terminal.

2. The controllable sensing device of claim 1, wherein the magnitude of the control signal is variable.

3. The controllable sensing device of claim 2, wherein the conduction magnitude of the control transistor is variable according to the magnitude of the control signal.

4. The controllable sensing device of claim 1, wherein the duration of the control signal is variable.

5. The controllable sensing device of claim 4, wherein the duration for conducting the control transistor is variable according to the duration of the control signal.

6. The controllable sensing device of claim 1, wherein the second conduction terminal is directly electrically connected to the sensing gate.

7. The controllable sensing device of claim 1, wherein the control transistor is a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET), wherein the control terminal is a gate, and the first conduction terminal is one of a source and a drain of the MOSFET, and the second conduction terminal is the other one of the source and the drain of the MOSFET.

8. The controllable sensing device of claim 1, wherein the sensing transistor is an Extended Gate Field Effect Transistor (EGFET).

9. The controllable sensing device of claim 1, wherein the reaction terminal isconfigured to connect to a sample reaction zone for ion sensing.

10. The controllable sensing device of claim 1, further comprising: a capacitor, electrically connected to the sensing gate and connected in parallel with the sensing transistor.

11. The controllable sensing device of claim 1, wherein: the control transistor is an N-MOSFET; the sensing transistor is an N-MOSFET; and the readout terminal electrically connected to the sensing drain.

12. The controllable sensing device of claim 11, further comprising: a capacitor, one terminal of which is electrically connected between the sensing gate and the second conduction terminal, and the other terminal of which is electrically connected to the sensing source.

13. The controllable sensing device of claim 11, further comprising: a ground terminal, electrically connected to the sensing source; and a voltage terminal, electrically connected to the sensing drain.

14. The controllable sensing device of claim 1, wherein: the control transistor is a P-MOSFET; the sensing transistor is an N-MOSFET; andthe readout terminal electrically connected to the sensing drain.

15. The controllable sensing device of claim 14, further comprising: a capacitor, one terminal of which is electrically connected between the sensing gate and the second conduction terminal, and the other terminal of which is electrically connected to the sensing source.

16. The controllable sensing device of claim 14, further comprising: a ground terminal, electrically connected to the sensing source; and a voltage terminal, electrically connected to the sensing drain.

17. The controllable sensing device of claim 1, wherein: the control transistor is an N-MOSFET; the sensing transistor is a P-MOSFET; and the readout terminal electrically connected to the sensing drain.

18. The controllable sensing device of claim 17, further comprising: a capacitor, one terminal of which is electrically connected between the sensing gate and the second conduction terminal, and the other terminal of which is electrically connected to the sensing source.

19. The controllable sensing device of claim 17, further comprising: a voltage terminal, electrically connected to the sensing source.

20. The controllable sensing device of claim 1, wherein: the control transistor is a P-MOSFET; the sensing transistor is a P-MOSFET; and the readout terminal electrically connected to the sensing drain.

21. The controllable sensing device of claim 20, further comprising: a capacitor, one terminal of which is electrically connected between the sensing gate and the second conduction terminal, and the other terminal of which is electrically connected to the sensing source.

22. The controllable sensing device of claim 20, further comprising: a voltage terminal, electrically connected to the sensing source.

23. A controllable sensing method, comprising steps of: providing a reaction terminal; providing a control transistor, which including a control terminal, a first conduction terminal, and a second conduction terminal; providing a sensing transistor, which including a sensing gate, a sensing source, and a sensing drain; and receiving a control signal via the control terminal, for switching on / off sensing a signal change via a readout terminal, wherein the readout terminalconfigured to electrically connect to one of the sensing source and the sensing drain of the sensing transistor, wherein the reaction terminal electrically connected to one of the first conduction terminal and the second conduction terminal, and wherein the sensing gate electrically connected to the other one of the first conduction terminal and the second conduction terminal.

24. The controllable sensing method of claim 23, wherein the magnitude of the control signal is variable.

25. The controllable sensing method of claim 24, wherein the conduction magnitude of the control transistor is variable according to the magnitude of the control signal.

26. The controllable sensing method of claim 23, wherein the duration of the control signal is variable.

27. The controllable sensing method of claim 26, wherein the duration for conducting the control transistor is variable according to the duration of the control signal.

28. The controllable sensing method of claim 23, wherein the second conduction terminal is directly electrically connected to the sensing gate.

29. The controllable sensing method of claim 23, wherein the control transistor is aMetal-Oxide-Semiconductor Field-Effect Transistor (MOSFET), wherein the control terminal is a gate, and the first conduction terminal is one of a source and a drain of the MOSFET, and the second conduction terminal is the other one of the source and the drain of the MOSFET.

30. The controllable sensing method of claim 23, wherein the sensing transistor is anExtended Gate Field Effect Transistor (EGFET).

31. The controllable sensing method of claim 23, wherein the reaction terminal is configured to connect to a sample reaction zone for ion sensing.

32. The controllable sensing method of claim 23, further comprising: providing a capacitor electrically connected to the sensing gate and connected in parallel with the sensing transistor.

33. The controllable sensing method of claim 23, wherein: the control transistor is an N-MOSFET; the sensing transistor is an N-MOSFET; and the readout terminal electrically connected to the sensing drain.

34. The controllable sensing method of claim 33, further comprising: providing a capacitor, one terminal of which is electrically connected between the sensing gate and the second conduction terminal, and the other terminal of which iselectrically connected to the sensing source.

35. The controllable sensing method of claim 33, further comprising: providing a ground terminal, electrically connected to the sensing source; and providing a voltage terminal, electrically connected to the sensing drain.

36. The controllable sensing method of claim 23, wherein: the control transistor is a P-MOSFET; the sensing transistor is an N-MOSFET; and the readout terminal electrically connected to the sensing drain.

37. The controllable sensing method of claim 36, further comprising: providing a capacitor, one terminal of which is electrically connected between the sensing gate and the second conduction terminal, and the other terminal of which is electrically connected to the sensing source.

38. The controllable sensing method of claim 36, further comprising: providing a ground terminal, electrically connected to the sensing source; and providing a voltage terminal, electrically connected to the sensing drain.

39. The controllable sensing method of claim 23, wherein:the control transistor is an N-MOSFET; the sensing transistor is a P-MOSFET; and the readout terminal electrically connected to the sensing drain.

40. The controllable sensing method of claim 39, further comprising: providing a capacitor, one terminal of which is electrically connected between the sensing gate and the second conduction terminal, and the other terminal of which is electrically connected to the sensing source.

41. The controllable sensing method of claim 39, further comprising: providing a voltage terminal, electrically connected to the sensing source.

42. The controllable sensing method of claim 23, wherein: the control transistor is a P-MOSFET; the sensing transistor is a P-MOSFET; and the readout terminal electrically connected to the sensing drain.

43. The controllable sensing method of claim 42, further comprising: providing a capacitor, one terminal of which is electrically connected between the sensing gate and the second conduction terminal, and the other terminal of which is electrically connected to the sensing source.

44. The controllable sensing method of claim 42, further comprising:providing a voltage terminal, electrically connected to the sensing source.

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