Optoelectronic device

Abstract

Optoelectronic device The present description relates to an optoelectronic device (10) comprising: an emitter (100), and a receiver (102), of light radiation; and at least a first layer (116), opaque to the wavelengths of the light radiation that can be emitted by the emitter, covering the receiver (102) and the emitter (100), the receiver (102) and the emitter (100) being separated by a region (116) of material opaque to the wavelengths of the light radiation that can be emitted by the emitter. Figure for abstract: Fig. 1

Description

Description Title of the invention: Optoelectronic device Technical field This description relates generally to optoelectronic devices, and more specifically, to devices comprising a receiver and an emitter of light radiation. Previous technique Many electronic devices include a light emitter and a receiver configured to receive the light emitted by the emitter. Examples include time-of-flight (TOF) sensors and optical switches. A time-of-flight sensor measures the distance between the sensor and an element in a scene. To do this, the time-of-flight sensor illuminates the scene with light and calculates the time it takes for that light to travel from the element to the sensor. The time of flight of this light is directly proportional to the distance between the sensor and the scene object whose distance to the sensor is being measured. An optical switch, for example, transitions from one state to another when the distance between the switch and an object in the scene is less than a certain distance. Summary of the invention One embodiment overcomes all or part of the disadvantages of known opto-electronic devices. One embodiment provides for an optoelectronic device comprising: a transmitter and a receiver of light radiation; and at least one first layer, opaque to the wavelengths of light radiation that can be emitted by the emitter, covering both the receiver and the emitter, the receiver and the emitter being separated by a region of material opaque to the wavelengths of light radiation that can be emitted by the emitter. According to one embodiment, the region of opaque material is part of the first layer. According to one embodiment, the receiver and the emitter are each covered with a second layer of a material at least partially transparent to the wavelengths of light radiation that can be emitted by the emitter, one of the second layers being located between the emitter and the first layer and the other of the second layers being located between the receiver and the first layer. According to one embodiment, the first layer includes an opening opposite of the receiver and an opening opposite the transmitter. According to one embodiment, a filter is located on every second layer, with the openings being located opposite a filter. According to one embodiment, a filter is located in each opening. According to one embodiment, the region of opaque material fills the space between the second layers. According to one embodiment, the receiver is configured to receive at least a portion of the radiation that can be emitted by the emitter. Another embodiment provides for a manufacturing process for an opto-electronic device comprising: the formation on a medium of a transmitter and a receiver of light radiation; and the formation of a first layer, opaque to the wavelengths of light radiation that can be emitted by the emitter, covering the receiver and the emitter, the emitter and the receiver being separated by a region of material opaque to the wavelengths of light radiation that can be emitted by the emitter. According to one embodiment, the process comprises the formation of second layers of a material at least partially transparent to the wavelengths of light radiation that can be emitted by the emitter, separated from each other, one of the second layers covering the emitter and the other second layer covering the receiver. According to one embodiment, the process includes filling the space between the second layers with an opaque material. According to one embodiment, the process includes the formation of the first layer, kept substantially flat above the second layers. According to one embodiment, the process includes pressing a mold onto the first layer so that the first layer conforms to the second layers. According to one embodiment, the first layer is stretchable. According to one embodiment, the first layer is formed by spraying. Brief description of the drawings These features and advantages, as well as others, will be described in detail in the following description of particular embodiments, given by way of non-limiting example, in relation to the attached figures, among which: [fig.1] Figure 1 represents one embodiment of an optoelectronic device; [fig.2] Figure 2 represents a manufacturing step of the embodiment of Figure 1; [fig.3] Figure 3 represents another manufacturing step of the embodiment of Figure 1; [fig.4] Figure 4 represents another manufacturing step of the embodiment of Figure 1; [fig.5] Figure 5 represents another manufacturing step of the embodiment of Figure 1; [fig.6] Figure 6 represents another embodiment of an optoelectronic device; [fig.7] Figure 7 represents a manufacturing step of the embodiment of Figure 6; [fig.8] Figure 8 represents another manufacturing step of the embodiment of Figure 6; [fig.9] Figure 9 represents another embodiment of an optoelectronic device; [fig.10] Figure 10 represents a manufacturing step of the embodiment of Figure 9; [fig.11] Figure 11 represents another manufacturing step of the embodiment of Figure 9; and [fig.12] Figure 12 represents another manufacturing step of the embodiment of figure 9. Description of the implementation methods The same elements have been designated by the same reference numerals in the different figures. In particular, structural and / or functional elements common to the different embodiments may have the same reference numerals and may have identical structural, dimensional and material properties. For the sake of clarity, only the steps and elements necessary for understanding the described implementation methods have been shown and are detailed. In particular, the possible applications of the device are not detailed. Unless otherwise specified, when referring to two connected elements, this means directly connected without any intermediate elements other than conductors, and when referring to two coupled elements, this means that these two elements can be connected or linked through one or more other elements. In the description that follows, when referring to qualifiers of absolute position, such as the terms "front", "back", "top", "bottom", "left", "right", etc., or relative position, such as the terms "above", "below", "superior", "inferior", etc., or to qualifiers of orientation, such as the terms "horizontal", "vertical", etc., it is done Reference to the orientation of the figures unless otherwise specified. Unless otherwise specified, the expressions 'approximately', 'roughly', 'significantly', and 'on the order of' mean within 10%, preferably within 5%. Figure 1 represents one embodiment of an optoelectronic device 10. Device 10 is, for example, a time-of-flight sensor or an optical switch. Device 10 includes a light emitter 100 and a light receiver 102. The radiation emitted by emitter 100 is, for example, infrared radiation, for example, radiation with a wavelength greater than 700 nm. Receiver 102 is configured to receive at least a portion of the radiation emitted by emitter 100. For example, receiver 102 and transmitter 100 include, or are connected to, a circuit not shown, configured to determine the distance of an element of a scene from the time between the emission of radiation by transmitter 100 and its reception by receiver 102. The device 10 includes a support 104, for example, at least partially made of an electrically insulating material. The transmitter 100 and the receiver 102 are located on the support 104. The transmitter 100 and the receiver 102 are fixed to the support 104. In the embodiment of the figure !, conductive studs 106, for example metallic studs, are located on the upper face of the support (104). The pads 106 are for example connected to each other and / or to other electronic components, for example, via conductive vias (not shown) and metallization levels (not shown) located in the support 104. The pads 106 are for example connected to each other and / or to other electronic components, for example, via conductive tracks located on the upper face of the support 104. In the example shown in Figure 1, the receiver 102 and the transmitter 100 are each located on a conductive pad 106, designated in Figure 1 by reference numeral 106a. For example, the transmitter 100 and the receiver 102 are each fixed to a conductive pad 106a by a fixing layer 108, for example, a layer of adhesive. Preferably, the fixing layer 108 is a conductive layer. The transmitter 100 and the receiver 102 are for example connected to one or more other conductive pads 106b, for example by a wired connection, for example by electrical wires. A layer 110 covers the emitter 100. The layer 110 is made of a material that is at least partially transparent to the wavelengths of radiation that can be emitted by the emitter 100. The layer 110 is preferably made of an electrically insulating material. A material transparent to a wavelength is defined as a material that allows at least 90% of the radiation of that wavelength to pass through. A layer 112 covers the receiver 102. Layer 112, like layer 110, is made of a material at least partially transparent to the wavelengths of radiation that can be emitted by the emitter 100. Layer 112 is preferably made of an electrically insulating material. For example, layers 110 and 112 are made of a resin. Layer 110 (or layer 112) covers, for example, the emitter 100 (or receiver 102), the conductive pad 106a on which the emitter 100 (or receiver 102) is fixed, and where applicable, conductive pads connected to the emitter 100 (or receiver 102). Layers 110 and 112 are separated. Layer 110, covering the emitter 100, is distinct from layer 112, covering the receiver 102. There is therefore a space 114 between layers 110 and 112. Layers 110 and 112 are, for example, separated by a distance greater than or equal to approximately 200 µm. Each layer 110 or 112, for example, has the shape of a chamfered parallelepiped. More precisely, each layer 110 or 112 comprises, for example, a substantially horizontal upper face and substantially vertical lateral faces, the lateral faces and the upper face being connected by inclined faces. Preferably, the external angles between the top face and the inclined faces and between the inclined faces and the lateral faces are strictly less than 90°, preferably between 20° and 70°. As an alternative, layers 110 and 112 may have a different shape. Preferably, layers 110 and 112 have only external angles between their different faces that are strictly less than 90°. As an alternative, the angles between the top face and the inclined faces and between the inclined faces and the side faces are rounded. Preferably, the upper faces of layers 110 and 112 are substantially co-planar. Layers 110 and 112 are covered by a layer 116. Layer 116 extends over the lateral, upper and inclined faces of layers 110 and 112. Preferably, layer 116 also covers the upper face of the support 104 in the space 114, between layers 110 and 112. Layer 116 is in a material opaque at least to the wavelengths of radiation that can be emitted by emitter 100. By a material opaque to a wavelength, we mean a material that lets through less than 0.001% of the radiation of that wavelength. Layer 116, for example, is made of a material based on poly(ethylene-co-tetrafluoroethylene). Layer 116, for example, has a thickness greater than or equal to 50 µm, preferably greater than or equal to 100 µm. The color of layer 116 is chosen so as to ensure the opacity of layer 116 at the wavelengths of radiation that can be emitted by emitter 100. The thickness of layer 116 is, for example, small enough not to fill the space 114 between layers 110 and 112. Layer 116 includes two openings 118. Layer 116 includes an opening 118a opposite the emitter 100 and an opening 118b opposite the receiver 102. The positions and dimensions of the openings 118 are such that the light radiation emitted by the emitter 100 can pass through the opening 118a and can reach the receiver through the opening 118b. Preferably, layers 110 and 112 are completely covered by layer 116, with the exception of openings 118. Preferably, each of the apertures 118 includes a filter 120. Aperture 118a includes a filter 120a, and aperture 118b includes a filter 120b. Each of the filters 120 preferably extends throughout its corresponding aperture 118. Preferably, each filter 118 completely fills the aperture in which it is located. Filters 120, for example, are made of a material that is at least partially transparent to the wavelengths of radiation that can be emitted by emitter 100. 120 filters, for example, have a thickness between 2 and 8 µm, preferably around 5 µm. The horizontal dimensions of the filters are, for example, between approximately 250 µm and 500 µm. For example, the horizontal dimensions of the 120a filter are approximately 400 µm and the horizontal dimensions of the 120b filter are approximately 300 µm. As an alternative, the thickness of layer 116 and the distance between layers 110 and 112 are such that space 114 is filled by the material of layer 116. As an alternative, layer 116 may comprise two distinct layers, a first layer covering layer 110 except for opening 118a, and a second layer covering layer 112 except for opening 118b. The first and second layers are, for example, separated at space 114 between layers 110 and 112. Alternatively, the emitter 100 and the receiver 102 can be fixed to the support by other means, and connected to each other and / or to other components by other means. Those skilled in the art will know how to implement these alternative means while ensuring that layers 110 and 112 are completely surrounded by material opaque to the wavelengths of the radiation that can be emitted by the emitter, with the exception of the openings 118. Figures 2 to 5 represent steps, preferably successive, of an embodiment of a manufacturing process for the device of Figure 1. Figures 2 to 5 describe the manufacture of a single device 10. In practice, devices 10 are manufactured per wafer, that is to say, a plurality of devices 10 are manufactured if- simultaneously on the same wafer. The plurality of devices 10 forms, for example, a device matrix. The devices 10 are, for example, separated from each other by a distance greater than or equal to approximately 250 µm. The steps described in relation to Figures 2 to 5 are carried out simultaneously at several locations on the wafer. Figure 2 represents a manufacturing step of the embodiment of Figure 1. During this step, the conductive pads 106 are formed on the support 104. Similarly, the means of connecting the conductive pads, i.e. vias and metallizations located in the support 104 and / or conductive tracks located on the support 104, are formed. The transmitter 100 and the receiver 102, having been manufactured previously, are then fixed to the studs 106a. For example, the transmitter 100 and the receiver 102 are fixed to the studs 106a by the fixing layers 108 deposited on the studs 106a. Connections can also be formed between the transmitter 100 and the pads 106b, and between the receiver 102 and the pads 106b. These connections are made, for example, as described previously, for example by electrical wires connecting the transmitter 100 or the receiver 102 and the pads 106b. Figure 3 represents another manufacturing step of the embodiment of Figure 1. During this step, layers 110 and 112 are formed, respectively on emitter 100 and receiver 102. Layers 110 and 112, for example, are made of resin that is transparent to the wavelengths of radiation that can be emitted by emitter 100. Layers 110 and 112 are formed, for example, by forming a mold around the emitter and receiver and filling it with resin, so as to obtain the shape described in relation to Figure 1. Figure 4 represents another manufacturing step of the embodiment of Figure 1. During this step, a layer 20, comprising layer 116 and filters 120, is formed on the structure resulting from the previous step. Layer 116 is, as previously described, made of a material opaque at least to the wavelengths of light radiation that can be emitted by emitter 100. Furthermore, layer 116 is preferably made of a stretchable material. Preferably, a stretchable material is understood to be a material having a tensile strength greater than or equal to approximately 30 MPa, preferably greater than or equal to approximately 39 MPa, and / or a material having a tensile elongation at break of between approximately 150% and 550%, preferably between 200% and 510%. Preferably, 120 filters are made of a non-stretchable material, i.e., by Example of materials whose tensile elongation at break is less than 200%, preferably less than 125%. For example, the filters are made of a material whose transmittance values ​​are: less than approximately 10% for wavelengths below approximately 650 nm, preferably for wavelengths below 750 nm; and greater than about 90% for wavelengths above 900 nm, preferably for wavelengths above 850 nm. Layer 116 includes the openings 118 described previously. The filters 120 are located in the openings 118, as previously described. Preferably, the filters 120 are shaped to be fixed in the openings 118. For example, the side walls of the filters 120 are fixed to the side walls of the openings 118. The filters 120 are preferably fixed in such a way that, when the layer 116 is stretched, the filters 120 remain fixed to the layer 116. Preferably, when the layer 116 is stretched, no opening is formed between a side wall of one of the filters 120 and a side wall of the opening 118 in which the filter is located. For example, layer 20 is kept substantially flat, preferably in a horizontal plane, i.e., for example, a plane substantially parallel to the upper face of the support 104. Layer 20 is held above layers 110 and 112. More precisely, layer 20 is located at a level higher than the upper face of layers 110 and 112. Layer 20 is held, for example, by support posts (not shown), for example, located on the edges of the plate. The posts are, for example, fixed at one end to the upper face of the support. Layer 20 is, for example, fixed to the other end of each post, these other ends being at a distance from the upper face of the support at least equal to, for example, greater than, the distance between the upper face of layers 110 or 112 and the upper face of the support 104. Preferably, layer 20 rests on the upper faces of layers 110 and 112. As an alternative, layer 20 can be kept separate from layers 110 and 112. Layer 20 is then not in contact with layers 110 and 112. Layer 20, for example, is kept taut. However, layer 20 is not fully stretched. Layer 20 is positioned so that the filters are placed in their designated locations. Thus, layer 20 is positioned so that the filters are opposite receiver 102 and transmitter 100, as described in relation to Figure 1. Figure 5 represents another manufacturing step of the embodiment of Figure 1. During this step, a mold 30 is pressed onto the structure resulting from the previous step. The mold 30 is pressed from the side of the upper face of the support 104. The layer 20 is therefore located between the mold 30 and layers 110 and 112. The mold 30 includes cavities having the complementary shape of layers 110 and 112 covered by layer 20. The mold 30 stretches the layer 116 so as to extend it conformably over the layers 110 and 112 and over the upper face of the support 104. More specifically, the layer 116 then extends over the exposed parts of the upper face of the support 104, and over the lateral, inclined and upper faces of the layers 110 and 112. Layer 116 is sufficiently stretchable to extend over layers 110 and 112 and over support 104 as described previously. Furthermore, layer 116 is sufficiently rigid to form a protective layer and not be damaged. Preferably, after being stretched, layer 116 has a thickness greater than or equal to approximately 100 µm. The mold 30 is preferably made of a metal or a heat-conducting material. Thus, once layer 20 is pressed against layers 110 and 112, the mold is heated to fix layer 116 to layers 110 and 112 and to the support 104. Preferably, the mold 30 includes secondary cavities 32. The secondary cavities 32 are located opposite the filters 120. The dimensions of the cavities 32 are such that the filters are not in contact with the mold 30. The horizontal dimensions of the cavities 32 are preferably at least equal to the horizontal dimensions of the filters 120, and preferably greater than the horizontal dimensions of the filters 120. Preferably, the cavities are entirely opposite the filters. The filters are therefore completely covered by the cavities 32. Preferably, the cavities 32 do not completely cover the upper surfaces of the layers 110 and 112. For example, the cavities 32 are filled with air, and the filters are entirely in contact with the air contained in the cavities 32. Preferably, the dimensions of the cavities are determined so that the mold 30 applies pressure to all parts of the layer 116 located on the layers 110 and 112, except for the parts located opposite the cavities 32. The cavities 32 prevent damage to the filters when layer 20 is pressed against layers 110 and 112. In addition, the cavities 32 limit the movement of the filters when layer 116 is stretched. According to one embodiment, the step in Figure 5 further includes an annealing step. During this step, the structure resulting from the step described in relation to Figure 5 is placed in a furnace and heated. This step improves the strength and adhesion of layer 116. The annealing step can be carried out at another point in the process, after the step in Figure 5. For example, the annealing step can be included in another step of another manufacturing process, for example the manufacture of another component of the wafer. The shape of layers 110 or 112, and in particular the absence of sharp angles—that is, the absence of angles between the faces of layers 110 or 112 greater than 70°, for example—prevents damage to layer 116. One could have considered forming layers 110 and 112 with sharp angles, for example, parallelepiped shapes. The mold would then have a complementary shape, and during pressing, layer 116 would risk being damaged at the corners. The manufacturing process for the embodiment shown in Figure | includes steps not depicted. In particular, the process includes a step, subsequent to the steps described in relation to Figures 2 to 5, in which the mold 30 is removed. The process further includes a step in which the individual features 10 of the same plate are separated, i.e., for example, the support 104 is sawn between the different features 10. Figure 6 represents another embodiment of an optoelectronic device 50. The embodiment shown in Figure 6 includes elements identical to those in device 10 of Figure 1. These elements will not be described again in detail. In particular, device 50 includes, like device 10: - support 104; - transmitter 100 and receiver 102; - the conductive pads 106, as well as the means of connection to which they are attached; - the 108 fixing layers; and - layers 110 and 112. The device 50 further includes filters 502. The filters 502 are identical to the filters 120 of the device 10 except for their positioning. Each filter 502 at least partially covers the upper surface of layer 110 or layer 112. Preferably, the filters 502 substantially completely cover the upper surfaces of layers 110 or 112. Device 50 comprises layers 504 and 506. Layers 504 and 506 are identical to layer 116 except that each layer 504 or 506 partially covers only one of the layers 110 or 112 and partially covers one of the filters 502. Layer 504 covers the side walls of layer 110, the inclined walls of layer 110, the side walls of one of the filters 502, and part of the upper face of filter 502. Optionally, layer 504 partially covers the upper face of layer 110. Layer 504 includes an opening 508 located, as the aperture 118a of figure 1. The aperture 508 is therefore opposite the emitter 100, in such a way that the radiation emitted by the emitter 100 can pass through the aperture 508. Preferably, the apertures 508 have the same dimensions as the filters 120 of figure 1. Layer 506 covers the side walls of layer 112, the inclined walls of layer 112, the side walls of the other filter 502, and part of the upper face of the other filter 502. Optionally, layer 506 partially covers the upper face of layer 112. Layer 506 includes an aperture 510 located, like aperture 118b in Figure 1. The aperture 510 is therefore opposite the receiver 102, such that the radiation received by the receiver 102 can pass through the aperture 510. In the example in Figure 6, layers 504 and 506 are distinct. Therefore, layers 504 and 506 are not in contact. Layers 504 and 506 are separated, for example, in the space 114 separating layers 110 and 112. Alternatively, layers 504 and 506 can form a single layer extending over the upper face of the support 104 in the space 114, like layer 116 in Figure 1. Figures 7 and 8 represent steps, preferably successive, of a manufacturing process for the embodiment of Figure 6. The manufacturing process includes, before the steps in Figures 7 and 8, the steps described in relation to Figures 2 and 3. Like Figures 2 to 5, Figures 7 and 8 describe the fabrication of a single device 50. In practice, devices 50 are fabricated per wafer, meaning that a plurality of devices 50 are fabricated simultaneously on the same wafer. The plurality of devices 50 forms, for example, a device matrix. The steps described in relation to Figures 7 and 8 are performed simultaneously at several locations on the wafer. Figure 7 represents a manufacturing step of the embodiment of Figure 6. During this step, the 502 filters are formed on the upper faces of layers 110 and 112. The filters are formed, for example, by a spin coating process. As an alternative, the 502 filters are formed, for example, by a sputtering process. The formation of the 502 filters is for example preceded by a step of forming a mask not shown protecting the parts on which the filters are not to be formed, for example the upper face of the support 104, as well as the lateral and inclined walls of the layers 110 and 112. For example, the 502 filters have the same thickness as the 120 filters in Figure 1. The 502 filters have dimensions at least equal to the dimensions of the 120 filters in Figure 1 and cover at least the portion of layers 110 and 112 covered by the 120 filters. Figure 8 represents another manufacturing step of the embodiment of Figure 6. During this step, layers 504 and 506 are formed. For example, this step includes the formation of a mask (not shown) covering the areas where layers 504 and 506 do not extend. In particular, the mask covers a portion of each filter 502 located opposite the receiver 102 and the emitter 100. The mask preferably covers the upper face of the support 104. The lateral and inclined faces of layers 110 and 112 are not covered by the mask. Layers 504 and 506 are then formed, for example by a spraying process, in areas not protected by the mask. Layers 110 and 112 are therefore entirely covered by layers 504 and 506, with the exception of the openings located opposite receiver 102 and emitter 100. The manufacturing process for the embodiment shown in Figure 6 can therefore include two spraying steps and two mask formation steps. The manufacturing process for the embodiment shown in Figure 6 includes manufacturing steps not shown. In particular, the process includes, as with the process described in relation to Figures 2 to 5, the individualization of the different devices 50. Figure 9 represents another embodiment of an optoelectronic device 70. The embodiment shown in Figure 9 includes elements identical to those shown in Figure 1. These elements will not be described again in detail. In particular, device 70 includes, like device 10: - support 104; - transmitter 100 and receiver 102; - the conductive pads 106, as well as the means of connection to which they are attached; - the 108 fixing layers; and - layers 110 and 112. Unlike the embodiment in Figure 1, the layers 110 and 112 of the device 70 are not separated by a space 114, but by a region 72. The region 72 is made of a material opaque to the wavelengths of the radiation that can be emitted by the emitter 100. The region 72 preferably fills the entire space separating the layers 110 and 112. The region 72 is therefore preferably in contact with the lateral faces of the layers 110 and 112. The region 72 preferably extends from the upper face of the support 104 and, for example, to the angle between the lateral faces and the inclined faces. The device 70 further includes a layer 74 identical to layer 116, but not extending into the space between layers 110 and 112. Layer 74 extends over region 72 and over the lateral, inclined and upper walls of layers 110 and 112, with the exception of the locations on the upper face of layers 110 and 112 on which the filters 120 are located. Layers 110 and 112 are therefore entirely covered by materials opaque to the wavelengths of radiation emitted by emitter 100, with the exception of the openings facing emitter 100 and receiver 102. As an alternative, region 72 may extend over a different height than that shown. Preferably, region 72 extends at least over the maximum height between the height of the transmitter and the height of the receiver. For example, region 72 extends to the level of the upper face of layers 110 and 112, and therefore covers the inclined faces located between layers 110 and 112. Figures 10 to 12 represent steps, preferably successive, of a manufacturing process for the embodiment of Figure 9. The manufacturing process includes, before the steps in Figures 10 to 12, the steps described in relation to Figures 2 and 3. Like Figures 2 to 5, Figures 10 to 12 describe the fabrication of a single device. In practice, the devices 70 are fabricated per wafer, meaning that a plurality of devices 70 are fabricated simultaneously on the same wafer. The plurality of devices 70 forms, for example, a device matrix. Thus, the steps described in relation to Figures 10 to 12 are carried out simultaneously at several locations on the wafer. Figure 10 represents a manufacturing step of the embodiment of Figure 9. During this step, region 72 is formed in the space between layers 110 and 112. Region 72 is formed, for example, by sputtering, or by any other process allowing the formation of region 72 of material between layers 110 and 112. The space between layers 110 and 112 is completely filled by the material of region 72. Figure 11 represents another manufacturing step of the embodiment of Figure 9. This step is identical to the step described in relation to Figure 4. A layer 76, comprising layer 74 and filters 120, is located above layers 110 and 112. Layer 74 is identical, for example, to layer 116 in Figure 4. Figure 12 represents another manufacturing step of the embodiment of Figure 9. This step is identical to the step in Figure 5, except that the mold has a different shape. Indeed, the mold, here referenced as 78, has a shape complementary to the shape of layers 110 and 112, of region 72 and of layer 76 pressed against them. The manufacturing process for the embodiment shown in Figure 9 includes steps not depicted. In particular, the process includes a step, subsequent to the steps described in relation to Figures 10 to 12, in which the mold 78 is removed. The process further includes a step in which the individual features 70 of the same plate are separated, i.e., for example, the support 104 is sawn between the different features 70. One advantage of the described embodiments is that the radiation emitted by the emitter 100 cannot directly reach the receiver 102. This is because the receiver and emitter are separated by a portion of opaque material (region 72 or layer 116, 504, 506). Therefore, the measurement of the received radiation is not affected, allowing for a more accurate distance measurement. Various embodiments and variants have been described. Those skilled in the art will understand that certain features of these various embodiments and variants could be combined, and other variants will become apparent to them. Finally, the practical implementation of the described embodiments and variants is within the reach of a person skilled in the art, based on the functional indications given above.

Claims

Demands

1. Optoelectronic device (10; 50; 70) comprising: a transmitter (100), and a receiver (102), of light radiation; and at least one first layer (116; 504, 506; 74), opaque to wavelengths of light radiation that can be emitted by the transmitter, covering the receiver (102) and the transmitter (100), the receiver (102) and the transmitter (100) being separated by a region (116; 504, 506; 72) of opaque material at wavelengths of light radiation that can be emitted by the emitter.

2. Device according to claim 1, wherein the material region opaque is part of the first layer (116; 502, 504).

3. Device according to claim 1 or 2, wherein the receiver (102) and the emitter (100) are each covered with a second layer (110, 112) in a material at least partially transparent to wavelengths the wave of light radiation that can be emitted by the emitter, one (110) of the second layers being located between the emitter (100) and the first layer (116; 504) and the other (112) of the second layers being located between the receiver (102) and the first layer (116; 506).

4. Device according to any one of claims 1 to 3, wherein the first layer (116; 504, 506; 72) includes an opening (118b) opposite the receiver (102) and an opening (118a) opposite the transmitter (100).

5. Device according to claims 3 and 4, wherein a filter (120) is located on each second layer (110, 112), the openings (108a, 108b) being located opposite a filter.

6. Device according to claim 5, wherein a filter (120) is located in each opening (118).

7. Device according to any one of claims 4 to 6 in their rat- staining in claim 3, wherein the region of opaque material (72) fills the space between the second layers (110, 112).

8. Device according to any one of claims 1 to 7, wherein the receiver (102) is configured to receive at least part of the radiation that can be emitted by the emitter (100).

9. A method for manufacturing an optoelectronic device comprising: the formation on a medium (104) of a transmitter (100), and of a receiver (102), of light radiation; and the formation of a first layer (116; 504, 506; 74), opaque to wavelengths of light radiation that can be emitted by the transmitter, covering the receiver and the transmitter, the transmitter and receiver being separated by a region (116; 504, 506; '72) of material opaque to the wavelengths of radiation light that can be emitted by the emitter.

10. A method according to claim 9, comprising the formation of second layers (110, 112) of a material at least partially transparent to the wavelengths of light radiation that can be emitted by the emitter separated from each other, one of the second layers (110) re- covering the emitter (100) and the other second layer (112) covering the receptor (102).

11. | Method according to claim 10, comprising filling the space between the second layers (110, 112) by an opaque material {72).

12. A method according to claim 10, comprising the formation of the first layer (20; 76), kept substantially flat above the second layers (110, 112).

13. A method according to claim 12, comprising pressing a mold (30; 78) on the first layer (20; 76) so that the first layer (20; 76) conforms to the second layers (110, 112).

14. A method according to any one of claims 9 to 13, wherein the first layer (20; 76) is stretchable.

15. A method according to any one of claims 9 to 14, wherein the first layer (20; 76) is formed by spraying.