Micro-capacitor

Abstract

Micro-capacitor comprising: an architectural support comprising a substrate and micro-pillars arranged on one face of the substrate, a first electrode arranged on the architectural support, a second electrode, and an insulating material arranged between the first and second electrodes.

Claims

Claims

1. Micro-capacitor comprising: - an architectural support comprising a substrate and micro-pillars arranged on one face of the substrate, - a first electrode arranged on the architectural support, - a second electrode, and - an insulating material arranged between the first and second electrodes.

2. Micro-capacitor according to claim 1, each micro-pillar having a cylindrical shape and comprising a cross-section of square or rectangular shape, preferably square, with in particular sides each having a length of between 2 pm and 6 pm, in particular between 3 pm and 5 pm.

3. Micro-capacitor according to claim 1 or 2, each micro-pillar having a length ranging from 10 pm to 400 pm, preferably ranging from 20 pm to 350 pm, more preferably ranging from 30 pm to 300 pm, even more preferably ranging from 40 pm to 250 pm.

4. A microcapacitor according to any preceding claim, the substrate and the micropillars being formed as a single piece.

5. Micro-capacitor according to any one of the preceding claims, the substrate and the micro-pillars comprising, or even being made of, a semiconductor material or an insulating material, in particular dielectric.

6. Micro-capacitor according to any one of the preceding claims, each micro-pillar having a free surface, and the architectural support comprising nano-wires arranged on the free surface of at least part of the micro-pillars.

7. Micro-capacitor according to claim 6, each nano-wire having a length ranging from 100 nm to 10 pm, preferably ranging from 200 nm to 9 pm, more preferably ranging from 300 nm to 8 pm, even more preferably ranging from 400 nm to 7 pm, and in particular ranging from 500 nm to 6 pm.

8. Micro-capacitor according to claim 6 or 7, each nano-wire having a cross-section whose largest dimension is between 20 nm and 200 nm, and preferably between 30 nm and 190 nm.

9. A microcapacitor according to any one of claims 6 to 8, each nanowire comprising a metal oxide or a mixture of metal oxides, and in particular a metal or a metal alloy.

10. Micro-capacitor according to any one of the preceding claims, the first electrode, the second electrode and the insulating material each being in the form of a thin layer, having in particular a thickness ranging from 1 nm to 250 nm, and preferably ranging from 2 nm to 225 nm.

11. Micro-capacitor according to claim 10, the first electrode and the second electrode each having a thickness ranging from 10 to 50 nm, preferably ranging from 15 nm to 45 nm, and more preferably ranging from 20 nm to 40 nm.

12. Micro-capacitor according to claim 10 or 11, the insulating material having a thickness ranging from 1 nm to 250 nm, preferably ranging from 1 nm to 225 nm, more preferably ranging from 1 nm to 200 nm, and even more preferably ranging from 2 nm to 200 nm.

13. Micro-capacitor according to any one of the preceding claims, the first electrode and the second electrode each being made of an electronically conductive material, in particular metallic.

14. Micro-capacitor according to claim 13, the electronically conductive material comprising, or even being made of, a metal, in particular a transition metal, or a metal alloy, in particular of transition metals.

15. Micro-capacitor according to claim 13 or 14, the electronically conductive material comprising, or even consisting of, platinum (Pt), gold (Au), silver (Ag), copper (Cu) or one of their mixtures, preferably platinum (Pt).

16. Micro-capacitor according to any one of the preceding claims, the insulating material comprising, or even consisting of, a metal oxide or a mixture of metal oxides.

17. Micro-capacitor according to claim 16, the insulating material comprising, or even consisting of, titanium dioxide (TiO2), silica (SiO2), alumina (A12O3), hafnium dioxide (HfO2), barium (meta)titanate (BaTiO3) or one of their mixtures, preferably alumina (A12O3).

18. Micro-capacitor according to any one of the preceding claims, the micro-capacitor comprising at least one protective layer, in particular thermal, arranged between the architectural support and the first electrode.

19. A microcapacitor according to any preceding claim, the microcapacitor having a capacitance of between 0.38 pF / cm2 and 3.8 mF / cm2.

20. Micro-capacitor according to any one of the preceding claims, the micro-capacitor having a breakdown voltage of between 1 V and 170 V, in particular between 1.7 V and 160 V.

21. Micro-capacitor according to any one of the preceding claims, the micro-capacitor comprising at least one contact orifice passing through the second electrode and the insulating material so as to expose a contact zone, in particular predefined, of the first electrode.

22. A microcapacitor according to any preceding claim, the microcapacitor being a metal-insulator-metal type microcapacitor.

23. Electronic system comprising a micro-capacitor according to any one of claims 1 to 22.

24. An electronic system according to claim 23, the electronic system being on-board, portable and / or intelligent.

25. Method for manufacturing a micro-capacitor according to any one of claims 1 to 22, comprising at least the following steps: a) providing an architectural support comprising a substrate and micro-pillars arranged on one face of the substrate, b) depositing a first electrode in the form of a thin layer on the architectural support, c) depositing an insulating material in the form of a thin layer on the first electrode, d) depositing a second electrode in the form of a thin layer on the insulating material.

26. The method of claim 25, wherein at least one of steps b), c) and d), in particular each of steps b), c) and d), is carried out by a chemical vapor deposition technique.

27. ​​Method according to claim 26, in which at least one of steps b), c) and d), in particular each of steps b), c) and d), is carried out by an atomic layer deposition technique, in particular at a temperature ranging from 150°C to 550°C, preferably ranging from 200°C to 500°C, and more preferably ranging from 250°C to 450°C.

28. The method of claim 27, wherein at least one of steps b) and d), in particular each of steps b) and d), is carried out in using: - at least one gas, preferably ozone (O3), and - at least one precursor of an electronically conductive material, in particular metallic, preferably a precursor of a metal, in particular transition metal.

29. Method according to claim 27 or 28, in which step c) is carried out using: - at least one oxidizing agent, and - at least one precursor of an insulating material, in particular dielectric, preferably a precursor of a metal oxide, in particular simple or mixed.