Electrical sampling device

Abstract

Electrical Sampling Device This description relates to an electrical sampling device (25) comprising a first propagation line (30) of a signal to be sampled (RFIN), a second propagation line (50) of a sampling signal (COM), samplers (401, 40i, 40N) connected to first points along the first propagation line controlled by control signals (COM1, COMN) supplied from the sampling signal to second points along the second propagation line, and first delay devices (601, 60j, 60M), individually controllable, each configured to apply an adjustable first time delay to the propagation of the signal to be sampled on the first propagation line, or second delay devices (701, 70k, 70P), individually controllable.each configured to apply a second adjustable time delay to the propagation of the sampling signal on the second propagation line. Figure for the abbreviation: Fig. 3,

Description

Title of the invention: Electrical sampling device technical field

[0001] The present description relates generally to the field of electrical sampling devices. Previous technique

[0002] For certain applications, it is desirable to be able to sample a signal at non-periodic sampling times.

[0003] An example of application concerns the sampling of a fleeting signal, for example an electrical pulse, when this signal is, for example, unique (non-repetitive), and very brief (i.e. has a duration on the order of a few tens, or a few hundred picoseconds).

[0004] It is desirable to be able to control and modify the sampling times individually. Summary of the invention

[0005] An embodiment overcomes all or part of the drawbacks of known electrical sampling devices for sampling a signal at non-periodic sampling times.

[0006] One embodiment provides an electrical sampling device comprising: - a first propagation line of a signal to be sampled; - a second propagation line of a sampling signal; - sampled elements connected to first points along the first propagation line, and controlled by control signals supplied from the sampling signal to second points along the second propagation line; and - first delay devices, individually controllable, each configured to apply a first adjustable time delay to the propagation of the signal to be sampled on the first propagation line or second delay devices, individually controllable, each configured to apply a second adjustable time delay to the propagation of the sampling signal on the second propagation line and not including any electronic components on the second propagation line.

[0007] According to one embodiment, the electrical sampling device includes the first delay devices and the second delay devices.

[0008] According to one embodiment, each first delay device comprises a first dielectric block covered with a corresponding portion of the first propagation line and first electrodes in contact with the first dielectric block and configured to apply a first electromagnetic field on the first dielectric block.

[0009] According to one embodiment, each second delay device comprises a second dielectric block covered with a corresponding portion of the second propagation line and second electrodes in contact with the second dielectric block and configured to apply a second electromagnetic field to the second dielectric block.

[0010] According to one embodiment, the first propagation line is part of a microstrip or coplanar type propagation structure.

[0011] According to one embodiment, the second propagation line is part of a microstrip or coplanar type propagation structure.

[0012] According to one embodiment, each sampler includes a capacitor and a switch connecting the capacitor to the first corresponding point along the first propagation line, the switch being controlled by the control signal supplied to the second corresponding point along the second propagation line.

[0013] One embodiment also provides for the use of the electrical sampling device as defined above, comprising the following steps: - supplying the signal to be sampled to the first propagation line; - provide a sampling signal to the second propagation line; - control the first delay devices to each temporally delay the propagation of the signal to be sampled on the first propagation line or control the second delay devices to each temporally delay the propagation of the sampling signal on the second propagation line.

[0014] According to one embodiment, the use includes the step of controlling the first delay devices to each temporally delay the propagation of the signal to be sampled on the first propagation line and controlling the second delay devices to each temporally delay the propagation of the sampling signal on the second propagation line.

[0015] According to one embodiment, the use includes the following steps: - applying first voltages between the first electrodes; and - applying second voltages between the second electrodes. Brief description of the drawings

[0016] These features and advantages, as well as others, will be described in detail in the following description of particular embodiments, given by way of non-limiting example, in relation to the accompanying figures, among which:

[0017] [Fig.1] is a partial and schematic perspective view of a known sampling device;

[0018] [Fig.2] is a partial and schematic perspective view of an embodiment of a sampling device;

[0019] [Fig. 3] is a partial and schematic top view of the device sampling of the [Fig.2];

[0020] Figure 4 represents an embodiment of an element of the sampling device in Figure 2; and

[0021] Fig. 5A, Fig. 5B, Fig. 5C and Fig. 5D illustrate the operation of the sampling device of Fig. 2. Description of the implementation methods

[0022] The same elements have been designated by the same reference numerals in the different figures. In particular, structural and / or functional elements common to the different embodiments may have the same reference numerals and may have identical structural, dimensional and material properties.

[0023] For the sake of clarity, only the steps and elements useful for understanding the described embodiments have been represented and are detailed.

[0024] Unless otherwise specified, when referring to two elements connected together, this means directly connected without intermediate elements other than conductors, and when referring to two elements coupled together, this means that these two elements can be connected or linked through one or more other elements.

[0025] In the following description, when reference is made to absolute position qualifiers, such as the terms "front", "back", "top", "bottom", "left", "right", etc., or relative position qualifiers, such as the terms "above", "below", "superior", "inferior", etc., or to orientation qualifiers, such as the terms "horizontal", "vertical", etc., reference is made, unless otherwise specified, to the orientation of the figures in a normal position of use.

[0026] Unless otherwise specified, the expressions "approximately", "roughly", "about", and "on the order of" mean to the nearest 10% or 10°, preferably to the nearest 5% or 5°. Furthermore, the terms "insulator" and "conductor" are taken to mean "electrically insulating" and "electrically conductive", respectively.

[0027] Fig. 1 represents an example of a known sampling device 5.

[0028] The sampling device 5 comprises a propagation line 10. A RF1N signal to be sampled is supplied to a first end 11 of the propagation line 10. The second end 12 of the propagation line 10 is connected to a terminal of impedance R, the other terminal of which is connected to a source of a low reference potential GND, for example, ground. The sampling device 5 further comprises samplers 20 arranged along the propagation line 10, three samplers 20 being shown by way of example in [Fig. 1]. The samplers 20 are controllable by a sampling signal COM. Each sampler 20 is shown comprising a capacitor C, the first electrode of which is connected to the source of the low reference potential GND and the second electrode of which is connected to the propagation line 10 by a switch SW controlled by the sampling signal COM.

[0029] The operation of the sampling device 5 is based on the principle of spatial sampling of the RF1N pulse. The RF1N pulse propagates along the propagation line 10. This results in a spatial equivalence of the temporal evolution of this RF1N pulse propagating along the propagation line 10 with a speed depending on the physical characteristics of the propagation line 10. At a given instant, if the propagation line 10 is of sufficient length, the entire RF1N pulse is spatially distributed along the propagation line 10. The simultaneous closing of the SW switches makes it possible to achieve complete sampling of the RF1N pulse, with a time step equal to the spatial step of the samplers 20, divided by the propagation speed.

[0030] One disadvantage of the sampling device 5 is that the time step between the samplers 20 cannot be changed.

[0031] Fig. 2 and Fig. 3 are respectively a partial and schematic perspective view and top view of an embodiment of a sampling device 25.

[0032] The sampling device 25 comprises a first propagation line 30. An RFIX signal to be sampled is supplied to a first end 31 of the propagation line 30. The second end 32 of the propagation line 30, on the side of the propagation line 30 opposite the first end 31, is connected, preferably connected, to a terminal of impedance R, for example equal to 50 ohms, the other terminal of which is connected, preferably connected, to a source of a low reference potential GND, for example ground. In one embodiment, the cross-sectional area of ​​the first propagation line 30 is constant.

[0033] The sampling device 25 further comprises N samplers 40i to 40N which are arranged along the propagation line 30, where N is an integer greater than or equal to 1, and for example, ranging from 1 to 100. Several considerations must be taken into account when choosing the number N. The higher N is, the longer the first and second propagation lines 30 and 50 are, and therefore the greater the propagation losses, as each propagation line 30, 50 behaves like a low-pass filter. In particular, the longer the second propagation line 50, the more "loads" the control signal C of the samplers 40i to 40N sees (the loads being the samplers 40i to 40N). The control signal C has its waveform distorted due to the low-pass filtering, which can alter the activation times of the samplers 40i to 40N. The bandwidth of the device 25 therefore decreases as the number N increases.According to one embodiment, two or more of two sampling devices 25 as described above can be cascaded in series, in particular to increase the number of sampling points without the number N per sampling device 25 becoming too high. For example, N is equal to 8 in Figures 2 and 3. Each sampler 40i, i ranging from 1 to N, is actuated by a control signal C0M. Each sampler 40i is shown comprising a capacitor C, the first electrode of which is connected, preferably connected, to the source of the low reference potential GND, and the second electrode of which is connected, preferably connected, to a first terminal of a switch SW, the second terminal of which is connected, preferably connected, to the propagation line 30 by a conductive trace 41.However, it is clear that each sampler 40 can have a different, and in particular more complex, structure than that described previously. The switch SW is controlled by the control signal C0M. The sampling device 25 includes a reading device 26 for the charges stored in the capacitors C to CN, shown only in [Fig. 3]. The reading device 26 may further include means for processing and / or storing the read signals, for example, analog-to-digital conversion means. The reading device 26 may also include a microcomputer for visualization or computer processing. In one embodiment, each switch SW corresponds to a transistor, for example, a metal-oxide-semiconductor field-effect transistor (MOSFET) or a bipolar transistor.

[0034] The sampling device 25 includes a second propagation line 50. A sampling signal COM is supplied to a first end 51 of the propagation line 50. The second end 52 of the propagation line 50, on the side of the propagation line 50 opposite to the first end 51, is connected, preferably connected, to a terminal of impedance R', shown only in [Fig. 3], for example equal to 50 ohms, the other terminal of which is connected, preferably connected to the source of a low reference potential, GND. According to one embodiment, the cross-section of the second propagation line 50 is constant. The sampling device 25 comprises N conductive tracks 42; to 42N. Each conductive track 42;, i varying from 1 to N, extends from the second propagation line 50 and provides the control signal C0M;.

[0035] The sampling device 25 comprises a succession of M initial delay devices 60; to 60M, where M is an integer ranging from 1 to 100. Preferably, M is equal to N. In one embodiment, each delay device 60j, j ranging from 1 to M, is configured to locally modify the propagation speed of the signal to be sampled RF1N over a portion 33j of the propagation line 30. In one embodiment, each delay device 60j does not include any active electronic components present on the propagation line 30.

[0036] Fig. 4 is a perspective view of the first 60j delay device.

[0037] According to one embodiment, each first delay device 60j, j varying from 1 to M, comprises a dielectric block 6lj of a material having a relative dielectric permittivity er; >k and having a top face 62j, a bottom face 63j, a front face 64j, a back face 65j and two opposite lateral faces 66j. The first propagation line 30 extends over the top faces 62; at 62M of the dielectric blocks 61; at 61m and divides into a succession of propagation line portions 33; at 33M on the top faces 62; at 62M, the propagation line portion 33j covering the top face 62j, the propagation line portion 33; including the first end 31 and the propagation line portion 33M including the second end 32. With the exception of the dielectric block 61M, the rear face 65j of the dielectric block 6lj, j varying from 1 to Ml, is attached to the front face 64j of the dielectric block 6lj+i.

[0038] According to one embodiment, the wave guidance in the first propagation line 30 is of the microstrip type. In this case, for each first delay device 60j, the lower face 63j is covered with a conductive plate 34j, and the conductive plates 34j to 34M may be connected, preferably, to the source of the low reference potential GND. According to an embodiment not shown, the wave guidance in the first propagation line 30 is of the coplanar type. In this case, for each first delay device 60j, the upper face 62j is covered with conductive strips on either side of the propagation line 30 and connected to the source of the low reference potential GND. The conductive plate 34j may then be omitted.

[0039] According to one embodiment, the cross-section of the first propagation line 30 is rectangular with a width Wa and a thickness Ea. According to another embodiment, the cross-section of the first propagation line 30 is constant.

[0040] Each dielectric block 6 lj has a length LCj which corresponds to the distance between the front face 64j and the rear face 65j, a thickness Ecj which corresponds to the distance between the upper face 62j and the lower face 63j, and a width WCj which corresponds to the distance between the lateral faces 66j.

[0041] According to one embodiment, the sampling device 25 includes means for individually modifying the dielectric permittivity of each dielectric block 6lj, j varying from 1 to M. For this purpose, according to one embodiment, each first delay device 60j, j varying from 1 to M, includes electrodes 67j on the lateral faces 66j, and the sampling device 25 includes, for each first delay device 60j, j varying from 1 to M, a device for applying a voltage VCj between the two electrodes 67j.

[0042] Considering Figures 2 and 3 again, according to one embodiment, the sampling device 25 comprises a succession of P second delay devices 70i to 70P, where P is an integer ranging from 1 to 100. Preferably, P is equal to N. According to one embodiment, each delay device 70k, k ranging from 1 to P, is configured to locally modify the propagation speed of the COM sampling signal over a portion 53k of the propagation line 50. According to one embodiment, each delay device 70k does not include any active electronic components present on the propagation line 50.

[0043] Each second delay device 70k, k varying from 1 to P, comprises a dielectric block 71k of a material having a relative dielectric permittivity er 2, k and having a top face 72k, a bottom face 73k, a front face 74k, a back face 75k and two opposite side faces 76k. The second propagation line 50 extends over the upper faces 72i to 72P of the dielectric blocks 711 to 71P and is divided into a succession of portions 53i to 53P of propagation line on the upper faces 72i to 72P, the portion of propagation line 53k covering the upper face 72k, the portion of propagation line 531 comprising the first end 51 and the portion of propagation line 53M comprising the second end 52. With the exception of the dielectric block 71P, the rear face 75k of the dielectric block 71k, k varying from 1 to Pl, is attached to the front face 74k of the dielectric block 71k +i.

[0044] According to one embodiment, the wave guidance in the second propagation line 50 is of the microstrip type. In this case, for each second delay device 70k, the lower face 73k is covered with a conductive plate 54k and the conductive plates 54i to 54P can be connected, preferably linked, to the source of the low reference potential GND. According to an embodiment not shown, the wave guidance in the second propagation line 50 is coplanar. In this case, for each second delay device 70k, the upper face 72k is covered with conductive strips on either side of the propagation line 50 and connected to the source of the low reference potential GND. The conductive plate 54k may then be omitted.

[0045] According to one embodiment, the cross-section of the second propagation line 50 is rectangular with a width Wb. According to another embodiment, the cross-section of the second propagation line 50 is constant.

[0046] Each dielectric block 71k has a length Ldk which corresponds to the distance between the front face 74k and the rear face 75k, a thickness Edk which corresponds to the distance between the upper face 72k and the lower face 73k, and a width Wdk which corresponds to the distance between the side faces 76k.

[0047] According to one embodiment, the sampling device 25 includes means for individually modifying the dielectric permittivity of each dielectric block 71k, k varying from 1 to P. For this purpose, according to one embodiment, each second delay device 70k, k varying from 1 to P, includes electrodes 77k on the lateral faces 76k, and the sampling device 25 includes, for each second delay device 70k, k varying from 1 to P, a device for applying a voltage Vdk between the two electrodes 77k.

[0048] According to one embodiment, each dielectric block 6lj, j varying from 1 to M, and each dielectric block 71k, k varying from 1 to P, is made of a dielectric material whose relative dielectric permittivity varies according to the amplitude of the electric field applied to the material. According to another embodiment, each dielectric block 6lj, j varying from 1 to M, and each dielectric block 71k, k varying from 1 to P, is made of a piezoelectric material.

[0049] According to one embodiment, each dielectric block 6lj, j varying from 1 to M, and each dielectric block 71k, k varying from 1 to P, is made of a dielectric material selected from the group comprising barium titanate (BaTiO3), lead zirconate titanoates (PZT, of formula PbZrxTiXO3, where 0 < x < 1), strontium barium niobate (SBN), polyvinylidene fluoride (PVDF), Terfenol-D, which is an iron and rare-earth alloy of formula Tbo,3Dyo,7Fei>9, magnesium niobate / lead titanate (PMN-PT), and mixtures of at least two of these compounds.

[0050] For each delay device 60j, j varying from 1 to M, the propagation speed of the signal to be sampled RF1N in the propagation line portion 33j according to the mode Transverse electromagnetic depends in particular on the geometry of the propagation line portion 33j, the value of the relative dielectric permittivity erCj of the material composing the dielectric block 6lj, and the thickness Ecj of the dielectric block 6lj.

[0051] When the first propagation line 30 is part of a microstrip propagation structure, the wavelength Xa of an electromagnetic wave propagating in the transverse electromagnetic mode in the propagation line portion 33j is defined by the following Math 1 equation:

[0052] [Math.l] -ao

[0053] where Xa0 is the electromagnetic ground wavelength in vacuum and ea is the equivalent relative dielectric permittivity which is given by the following equation Math 2 when the ratio between the width Wa of the propagation line 30 and the thickness Ecj of the dielectric block 6lj is less than 1:

[0054] [Math.2] + +0.004(1-(^))

[0055] or by the following Math 3 equation when the ratio between the width Wa and the thickness Ecj is greater than or equal to 1:

[0056] [Math.3] c -^+ 1 H' 1 / 2 Ea_ 2 " 2 \i + iZlWa / /

[0057] For each first delay device 60j, where j varies from 1 to M, varying the amplitude of the voltage Vcj between the two electrodes 67j can modify the relative dielectric permittivity erc of the material composing the dielectric block 6lj. This allows the relative dielectric permittivity erCj of each dielectric block 6lj to be varied individually, and thus the propagation speed of the RF1N signal to be varied individually in the portion of the propagation line 33j covering each delay device 60j.

[0058] Similarly, for each delay device 70k, k varying from 1 to P, the propagation speed of the COM sampling signal in the propagation line portion 53k according to the transverse electromagnetic mode depends in particular on the geometry of the propagation line portion 53k, the value of the relative dielectric permittivity erdk of the material composing the dielectric block 71k, and the thickness Edk of the dielectric block 71k.

[0059] When the second propagation line 50 is part of a microstrip-type propagation structure, the wavelength Xb of an electromagnetic wave propagating in the transverse electromagnetic mode in the 53k propagation line portion is defined by the following Math 4 equation:

[0060] [Math.4] A _^bO

[0061] where Xb0 is the wavelength of the electromagnetic wave in vacuum and eb is the equivalent relative dielectric permittivity which is given by the following equation Math 5 when the ratio between the width Wb of the propagation line 50 and the thickness Edk of the dielectric block 7lj is less than 1:

[0062] [Math.5] Eb=2 lii.2ii[( 1+12 (^)y 1 / 2 + o.oo4(i-(^)) 2 ]

[0063] or by the following Math 6 equation when the ratio between the width Wb and the thickness Edk is greater than or equal to 1:

[0064] [Math.6] erdk+l crdk-l / . . Edk \ ^-“3---T-(l + 12(wè))

[0065] For each second delay device 70k, where k varies from 1 to P, varying the amplitude and / or frequency of the voltage Vdk between the two electrodes 77k, the relative dielectric permittivity erdk of the material composing the dielectric block 71k can be modified. This allows the relative dielectric permittivity erdk of each dielectric block 71k to be varied individually, and thus the propagation speed of the COM signal in the portion of the propagation line 73k covering each delay device 70k to be varied individually.

[0066] According to one embodiment, each length Lcj, j varying from 1 to M, and each length Ldk, k varying from 1 to P, is between 10 µm and 5 mm. According to one embodiment, each thickness ECj, j varying from 1 to M, and each thickness Edk, k varying from 1 to P, is between 10 µm and 5 mm. According to one embodiment, each width WCj, j varying from 1 to M, and each width Wdk, k varying from 1 to P, is between 2 µm and 1 mm. According to one embodiment, the width Wa is between 1 µm and 1 mm. According to one embodiment, the thickness Ea of the propagation line 30 is between 1 µm and 100 µm. According to one embodiment, the width Wb is between 1 µm and 1 mm. According to one embodiment, the thickness of the propagation line 50 is between 2 pm and 50 mm.

[0067] According to one embodiment, the propagation line 30 is made of a dielectric material selected from the group comprising barium titanate (BaTiO3), lead zirconate titanates (PZT of formula PbZrxTiXO3, where 0 < x < 1), niobate strontium barium (SBN), poly(vinylidene fluoride) (PVDF), Terfenol-D which is an iron and rare earth alloy of formula Tbo,3Dyo,7Fei>9, magnesium niobate / lead titanate (PMN-PT) as well as mixtures of at least two of these compounds. According to one embodiment, the propagation line 50 is made of a dielectric material selected from the group comprising barium titanate (BaTiO3), lead zirconate titanoates (PZT of formula PbZrxTiiXO3, where 0 < x < 1), strontium barium niobate (SBN), poly(vinylidene fluoride) (PVDF), Terfenol-D which is an iron and rare earth alloy of formula Tb0.3Dy0.7Fei.9, magnesium niobate / lead titanate Lead (PMN-PT) and mixtures of at least two of these compounds.

[0068] The bandwidth of the RF signal^ is between 100 MHz and 200 GHz.

[0069] The operation of the sampling device will now be described. The RF1N sample signal is supplied at end 31 of the first propagation line 30. The RF1N sample signal travels along the first propagation line 30 to end 32. Each first delay device 50j, where j varies from 1 to M, is configured to apply a localized delay to the RF1N sample signal. In each portion of the propagation line 33j, where j varies from 1 to M, the propagation speed of the RF1N sample signal depends on the applied delay.

[0070] The COM sampling signal is supplied at the end 51 of the second propagation line 50. In one embodiment, the COM sampling signal corresponds to a voltage pulse. The COM sampling signal propagates along the second propagation line 50 to the end 52. Each second delay device 70k, k ranging from 1 to P, is configured to apply a localized delay to the COM sampling signal. In each portion of the propagation line 53k, k ranging from 1 to M, the propagation speed of the control signal is determined by the applied delay.

[0071] The control signal C0M;, i varying from 1 to N, corresponds to a portion of the sampling signal COM which is diverted into the conductive track 42; and enables the switch SW; to be activated. According to one embodiment, the switch SW; is normally inverted, and the application of the voltage pulse C0M; turns the switch SW; on for a duration D (illustrated in Figures 5A to 5D described subsequently), the switch SW; becoming inverted again at the end of the duration D. During this duration D, a portion of the RF1N signal is diverted via the conductive track 41j, which leads to the accumulation of charge in the capacitor Q. When the switch SW; becomes inverted again at the end of the duration D, the capacitor C; is isolated from the first propagation line 30 and then serves as a storage capacitor. The voltage samples are thus taken by a shunt of the carried charge by the RF^ sampling signal. These charges are then read by the reading device 26.

[0072] The combination of the delay applied to the RF^ sampled signal on the first propagation line 30 due to the first delay devices 50i to 50M, and the delay between the actuation of the samples by the control signals COMi to C0Mn, from the COM sampling signal propagating on the second propagation line 50 due to the second delay devices 70i to 70P, determines the sampling step of the sampling device 25. A non-simultaneous spatial sampling of the RF1N signal is thus achieved.

[0073] This advantageously avoids the need for a very long propagation line 30 which alters the RF1N signal in a non-uniform way.

[0074] According to one embodiment, the number N is equal to the number of samples to be taken from the sampled signal RF1N. Each sampler 40i, i ranging from 1 to N, may operate only once per acquisition. The voltage signal is reconstructed by the reading device 26 from the N samples. For example, N could be 100 samples, coded on 8 bits, corresponding to an analysis time window of 25 ns at 4 GHz or 5 ns at 20 GHz. Advantageously, the equivalent sampling frequency is greater than 500 GHz.

[0075] Fig. 5A, Fig. 5B, Fig. 5C and Fig. 5D illustrate the operation of the sampling device 25 of Fig. 2.

[0076] The RF!N signal to be sampled is introduced on the propagation line 30 to which N samplers 40i to 40N are connected, with N being chosen as 8 as an example in Figures 5A to 5D. In [Fig. 5A], sampler 401 is activated for a duration D. The portion of the signal identified by the reference S1 in [Fig. 5A] is thus sampled. Then, the RFIN signal propagates along the propagation line 30 and, at a certain instant, sampler 402 samples another portion of the RFIN signal (the portion designated by the reference S2 in [Fig. 5B]). The RFIN signal continues to propagate and sampler 403 samples another portion of the RFIN signal (the portion designated by the reference S3 in [Fig. 5C]). The RFIN signal continues to propagate and sampler 404 samples yet another portion of the RFIN signal (the portion designated by the reference S4 in [Fig. 5D]). The sampling process continues for each sampler 405 to 408.

[0077] The time difference between two points sampled on the RF1N signal (for example, the time difference ATn between samples S1 and S2, the time difference AT2 between samples S2 and S3, and the time difference AT3 between samples S3 and S4) therefore depends, in particular, on the propagation speed of the RF1N signal in the first propagation line 30, which depends on the delays introduced by the first Delay devices 50i to 50M and, on the other hand, the propagation speed of the COM sampling signal in the second propagation line 50, which depends on the delays introduced by the second delay devices 70i to 70P. In particular, each time gap ATi2, AT23, AT34 can be controlled separately to the desired value.

[0078] According to one embodiment, it is possible to vary the sampling time step by varying the delay between successive samplers. This delay can be chosen by the user according to the sampling frequency and the analysis window required.

[0079] According to one embodiment, the delay devices 60j, j varying from 1 to M, and the delay devices 70k, k varying from 1 to P, are controlled so that at least some of the samplers 40;, i varying from 1 to N, sample the same "instant" of the RFIX signal, for example for signal processing purposes, such as averaging.

[0080] According to one embodiment, the delay devices 60j, j varying from 1 to M, and the delay devices 70k, k varying from 1 to P, are controlled so that a first sample acquired by a sampler 40j corresponding to a first "instant" of the RF1N signal and a second sample acquired by a sampler 40q, j and q varying from 1 to N-1 and q being strictly greater than j, corresponding to a second "instant" of the RFIX signal which is prior to the first instant, which corresponds to a reverse time sampling principle.

[0081] Advantageously, the 70k delay devices, k varying from 1 to P, do not introduce jitter into the COM sampling signal, and therefore no distortion in the signal reconstructed from the samples.

[0082] An example of an application relates to the sampling of pulses from very fast radiation detectors, which convert the energy of a radiation pulse they receive into electrical pulses, for example, an X-ray or gamma-ray pulse, or a visible or infrared pulse. Such radiation may be emitted by ultrafast radiation sources, such as lasers or synchrotron radiation sources, or may be the result of a laser-matter interaction caused by an ultrafast laser (i.e., one whose pulse duration is in the picosecond or femtosecond range).

[0083] Another example of application concerns a pulsed radar receiver operating in the millimeter band, where the times of emission and reception are by definition correlated due to the propagation time between the system and the target.

[0084] Various embodiments and variations have been described. A person skilled in the art will understand that certain features of these various embodiments and variants could be combined, and other variants will appear to the person of the trade.

[0085] Finally, the practical implementation of the described embodiments and variants is within the grasp of a person skilled in the art, based on the functional specifications given above. In particular, although embodiments have been described for sampling intermittent signals, it is clear that the electrical sampling device 25 described previously can be used for sampling repetitive signals. In this case, the COM control signal can be adjusted according to the periodicity of the RF1N signal to be analyzed, by modifying the sampling times at each period.

Claims

1. Demands Electrical sampling device (25) comprising: - a first propagation line (30) of a signal to be sampled (RF1N) forming part of a propagation structure of the microstrip or coplanar type; - a second propagation line (50) of a sampling signal (COM) forming part of a microstrip or coplanar type propagation structure; - sampled (40b 40;, 40N) connected to first points along the first propagation line (30), and controlled by control signals (COM;, C0MN) supplied from the sampling signal (COM) to second points along the second propagation line (50), each sampler (40;, 40;, 40n) comprising a capacitor (Ci, Ci, CN) and a switch (SWb SW;, SWN) connecting the capacitor (Ci, C;, CN) to the first corresponding point along the first propagation line (30), the switch (SWb SW;, SWN) being controlled by the control signal (COMi, C0M;, C0MN) supplied to the second corresponding point along the second propagation line (50); - first delay devices (60b, 60j, 60M), individually controllable, each configured to apply a first adjustable time delay to the propagation of the signal to be sampled (RFIX) on the first propagation line (30), each first delay device (60b, 60j, 60M) comprising a first dielectric block (61i, 61j, 61M) covered with a corresponding portion (33t, 33j, 33M) of the first propagation line (30) and first electrodes (67b, 67j, 67M) in contact with the first dielectric block (61b, 61j, 61M) and configured to apply a first electromagnetic field to the first dielectric block (61b, 61j, 61M); and -second delay devices (70b 70k, 70P), individually controllable, each configured to apply a second adjustable time delay to the propagation of the sampling signal (COM) on the second propagation line (50) and not comprising any electronic components on the second propagation line (50), each second delay device (70b 70k, 70P) comprising a second dielectric block (71b 71k, 71P) covered by a corresponding portion (53b 53j, 53P) of the second propagation line (50) and second electrodes (77b 77k, 77P) in contact with the second dielectric block (71b 71k, 71P) and configured to apply a second electromagnetic field to the second dielectric block (71b 71k, 71P).

2. Use of the electrical sampling device (25) according to claim 1, comprising the following steps: - supplying the signal to be sampled (RF^) to the first propagation line (30); - supplying a sampling signal (COM) to the second propagation line (50); - controlling the first delay devices (60b 60j, 60M) to each temporally delay the propagation of the signal to be sampled on the first propagation line (30) or controlling the second delay devices (70b 70k, 70P) to each temporally delay the propagation of the sampling signal (COM) on the second propagation line (50).

3. Use according to claim 2, comprising the step of controlling the first delay devices (60b 60j, 60M) to each temporally delay the propagation of the signal to be sampled on the first propagation line (30) and controlling the second delay devices (70b 70k, 70P) to each temporally delay the propagation of the sampling signal (COM) on the second propagation line (50).

4. Use according to claim 2 or 3, comprising the following steps: - applying first voltages (VCj) between the first electrodes (67b 67j, 67M); and - applying second voltages (Vdk) between the second electrodes (77b 77k, 77P).