optoelectronic device and its manufacturing process

Abstract

Title: Optoelectronic Device and its Manufacturing Process. The object of the invention is a light-emitting diode (1) comprising, arranged in a stacking direction: - a first GaN-based injection region, - a first InGaN-based barrier layer with an indium concentration [In]1 ≤ 10 at.%, - an active region configured to emit light, based on InGaN, having an indium concentration [In]a > [In]1, said active region being in direct contact with the first InGaN-based barrier layer, - a second injection region. Advantageously, the first InGaN-based barrier layer exhibits regularly distributed indium concentration fluctuations in the form of bands within the first barrier layer, and the first barrier layer has a substantially constant thickness. The invention also relates to a manufacturing process for such a 3D LED. Abstract: Figure 2A.

Claims

following directions perpendicular to the direction [0001] on planes m and / or planes a of the first injection region (21).

12. A method according to any one of claims 10 and 11, wherein T2 > Tl + 75 °C.

13. A method according to any one of claims 10 to 12, wherein the formation of the first InGaN-based barrier layer (41) is configured such that the first InGaN-based barrier layer has a thickness between 10 nm and 50 nm.

14. A method according to any one of claims 10 to 13, wherein the formation of the first InGaN-based barrier layer (41) is configured such that the first InGaN-based barrier layer has an average indium [In]1 concentration between 1% and 6% at.

15. A method according to any one of claims 10 to 14, wherein the formation of the first InGaN-based barrier layer (41) is carried out by metal-organic vapor epitaxy (MOVPE), with a trimethylindium precursor flow rate between 1.7 and 10.0 pmol / min. [Fig. 1] Z HAS [Fig. 2A] . ^41 [Fig. 2B] [Fig. 3B]

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