Wheatstone bridge manufacturing process

The method of sequentially stacking and bonding magnetic layers with controlled orientations addresses integration challenges in Wheatstone bridge manufacturing, improving sensitivity and accuracy in resistance-based sensing.

FR3168740A1Pending Publication Date: 2026-05-22COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
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Patent Information

Authority / Receiving Office
FR · FR
Patent Type
Applications
Current Assignee / Owner
COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
Filing Date
2024-11-21
Publication Date
2026-05-22

AI Technical Summary

Technical Problem

Existing methods for manufacturing Wheatstone bridges face challenges in efficiently integrating and aligning magnetic layers with precise magnetization orientations to form functional half-bridges, leading to inefficiencies in resistance-based sensing applications.

Method used

A method involving the sequential stacking and bonding of magnetic layers with controlled magnetization directions, followed by structuring and electrical connections to create a complete Wheatstone bridge, utilizing adhesive layers to align and bond half-bridges with orthogonal or parallel magnetization orientations.

Benefits of technology

Enables the efficient assembly of Wheatstone bridges with precise magnetic layer orientations, enhancing sensitivity and accuracy in resistance-based sensing applications.

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Abstract

The invention relates to a method for manufacturing a Wheatstone bridge comprising the following steps: a step of supplying a first slice comprising: a first stack of layers including: a first magnetic layer, the first stack of layers being structured into a first half-Wheatstone bridge in which the magnetization of the first magnetic layer is oriented in a first direction; a step of supplying a second slice comprising: a second stack of layers, including: a third magnetic layer; a first step of structuring the second stack of layers into a second half-Wheatstone bridge in which the magnetization of the third magnetic layer is oriented in a second direction; a bonding step, in which the bonding step is carried out such that the first direction is different from the second direction. Figure for the abstract: Fig. 7
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