confined phase-change memory
The phase-change material memory cell with a cavity-based active layer design addresses the challenge of controlling temperature gradients in PCMs, enabling multilevel memory states and reduced programming current, while simplifying manufacturing and increasing cell density.
FR3170092A1Pending Publication Date: 2026-06-19COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
Patent Information
- Authority / Receiving Office
- FR · FR
- Patent Type
- Applications
- Current Assignee / Owner
- COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Filing Date
- 2024-12-18
- Publication Date
- 2026-06-19
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Abstract
Confined Phase-Change Memory The present invention proposes a confined memory cell (1) in which the active layer (13), formed within the cavity (12) of the dielectric material (14) where it is confined, is such that the active layer lines the lateral wall and the bottom of the cavity while delimiting an internal space without active material. Such a structure allows the advantages of a confined structure, namely a lower programming current intensity than for non-confined structures, while also enabling the memory cell to achieve multiple programming levels. Figure to be published with the abbreviation: Figure 1
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