An apparatus for performing quantum gate operations, and method thereof

Abstract

An apparatus (100) for performing quantum gate operations comprising: a trap system (110) configured to: confine a first portion of a plurality of particles in a first zone (120); confine a second por

Description

The present disclosure pertains to an apparatus for performing quantum gate operations. In particular, it pertains to an apparatus for performing parallel quantum gate operations for quantum computing. BACKGROUND In the context of quantum computing, quantum gates describe quantum operations performed on one or more qubits or qudits. Quantum gates are analogous to logic gates used in electronic circuits. For a quantum computer comprising many qubits or qudits, a large number of quantum gate operations need to be performed simultaneously across a plurality of qubits. SUMMARY It is desirable to provide an improved apparatus for performing parallel quantum gate operations for use in quantum computing. According to a first aspect of the disclosure, there is provided an apparatus for performing quantum gate operations comprising: a trap system configured to: confine a first portion of a plurality of particles in a first zone; confine a second portion of a plurality of particles in a second zone; and a control system configured to: perform a first quantum gate operation on the first portion of the plurality of particles; and perform a second quantum gate operation on the second portion of the plurality of particles; wherein: the first portion and the second portion of the plurality of particles each comprise two or more particles. Optionally, the first quantum gate operation is different from the second quantum gate operation. Optionally, the control system is configured to perform the first and second quantum gate operation in parallel. Optionally, the first quantum gate operation is a first multi-qubit gate operation and the second quantum gate operation is a second multi-qubit gate operation. Optionally, the control system is configured to control the trap system to confine the plurality of particles. Optionally, the first portion of the plurality of particles comprises at least a first particle and a second particle; and the second portion of the plurality of particles comprises at least a third particle and a fourth particle. Optionally, the apparatus comprises a quantum computer comprising the trap system. Optionally, the particles are atoms, molecules or ions. Optionally, the plurality of particles comprise a plurality of barium ions. Optionally, the plurality of barium ions comprises a plurality of odd-numbered isotopes. Optionally, each particle in the plurality of particles is configured as a unit of information for quantum computing. Optionally, the unit of information for quantum computing is a qubit or a qudit. Optionally, the trap system comprises: a first plurality of electrode modules comprising a first electrode module configured to receive a first voltage and a second electrode module configured to receive a second voltage. Optionally, the first electrode module is coupled to the first zone; and the second electrode module is coupled to the second zone; such that if the first voltage and / or the second voltage is adjusted then the first zone and / or the second zone are controlled to perform the first quantum gate operation and / or the second quantum gate operation on the first portion and / or the second portion of the plurality particles. Optionally, the first voltage and / or the second voltage is a DC voltage. Optionally, the apparatus comprises a confinement module configured to: apply an electromagnetic signal to the first portion of the plurality of the particles in the first zone, thereby confining the first portion of the plurality of particles in the first zone; and apply the electromagnetic signal to the second portion of the plurality of particles in the second zone, thereby confining the second portion of the plurality of particles in the second zone. Optionally, the electromagnetic signal is a laser signal, and the confinement module comprises an optical coupler configured to provide the laser signal to the first and second portions of the plurality of particles, to confine the portions of the plurality of particles in their respective zones. Optionally, the confinement module comprises: a second plurality of electrode modules comprising a third electrode module configured to receive the electromagnetic signal and a fourth electrode module configured to receive the electromagnetic signal; wherein: the third electrode module is coupled to the first zone; and the fourth electrode module is coupled to the second zone; such that when the electromagnetic signal is applied to the third electrode module and the fourth electrode module, the first portion of the plurality of particles are confined within the first zone and the second portion of the plurality of particles are confined within the second zone in parallel. Optionally, the electromagnetic signal comprises a laser, a magnetic field, or a magnetic field gradient. The magnetic field may suitably be used for single-qubit rotations, and the gradient for two-qubit gates. Optionally, the trap system comprises: a trap comprising the first zone and the second zone; a vacuum chamber, the trap being within the vacuum chamber; and a particle source coupled to the trap, the particle source configured to provide the plurality of particles to the trap. Optionally, the particle source is an ion source and the ion source comprises: a neutral atom source configured to provide a plurality of neutral atoms; an ionisation device configured to ionise the plurality of neutral atoms, thereby providing the plurality of ions. Optionally, the trap system is configured: to form a first potential well within the first zone, the first potential well configured to confine the first portion of the plurality of particles; and to form a second potential well within the second zone, the second potential well configured to confine the second portion of the plurality of particles; wherein: the first portion of the plurality of particles comprises at least a first particle and a second particle; and the second portion of the plurality of particles comprises at least a third particle and a fourth particle . Optionally, the first particle and second particle comprise respective first and second positions in the first potential well and share a first motional mode frequency and a first alignment angle. The third particle and the fourth particle comprise respective third and fourth positions in the second potential well, and share a second motional mode frequency and a second alignment angle. The motional frequencies of the particles in the first well can be different to the particles in the second well, and can also have a different alignment angles. This applies to all relevant embodiments. Optionally, the trap system comprises: a first plurality of electrode modules comprising a first electrode module configured to receive a first voltage and a second electrode module configured to receive a second voltage. Optionally, the apparatus comprises a confinement module configured to: apply an electromagnetic signal to the first portion of the plurality of particles in the first zone, thereby confining the first portion of the plurality of particles in the first zone; and apply the electromagnetic signal to the second portion of the plurality of particles in the second zone, thereby confining the second portion of the plurality of particles in the second zone. Optionally, the electromagnetic signal is a laser signal, and the confinement module comprises an optical coupler configured to provide the laser signal to the first and second portions of the plurality of particles, to confine the portions of the plurality of particles in their respective zones. Optionally, the confinement module comprises: a second plurality of electrode modules comprising a third electrode module configured to receive the electromagnetic signal and a fourth electrode module configured to receive the electromagnetic signal; wherein: the third electrode module is coupled to the first zone; and the fourth electrode module is coupled to the second zone; such that when the electromagnetic signal is applied to the third electrode module and the fourth electrode module, the first particle and / or the second particle is confined in the first potential well and the third particle and / or the fourth particle is confined in the second potential well in parallel. Optionally, the electromagnetic signal is a laser or a magnetic field. Optionally, the first electrode module is coupled to the first zone; and the second electrode module is coupled to the second zone; such that: if the first voltage is adjusted, the first zone is controlled to perform the first quantum gate operation on the first particle and / or the second particle confined in the first potential well; and / or if the second voltage is adjusted, the second zone is controlled to perform the second operation on the third particle and / or the fourth particle confined in the second potential well. Optionally, the first voltage and / or the second voltage is a DC voltage. Optionally, the first quantum gate operation performed on the first particle comprises: adjusting the first position in the first potential well; and / or adjusting the first motional mode frequency; and / or adjusting the first alignment angle; and / or the first quantum gate operation performed on the second particle comprises: adjusting the second position in the first potential well; and / or adjusting the first motional mode frequency; and / or adjusting the first alignment angle. Optionally, the second quantum gate operation performed on the third particle comprises: adjusting the third position in the second potential well; and / or adjusting the second motional mode frequency; and / or adjusting the second alignment angle; and / or the second quantum gate operation performed on the fourth particle comprises: adjusting the fourth position in the second potential well; and / or adjusting the second motional mode frequency; and / or adjusting the second alignment angle. Optionally, the control system comprises: a first controller configured to perform a third quantum gate operation on the plurality of particles and / or confine the plurality of particles; and a second controller configured to perform the first and second quantum gate operations. Optionally, the first controller comprises an electromagnetic signal generator configured to generate an electromagnetic signal for performing the third quantum operation on the plurality of particles in the first zone and the second zone; and the second controller comprises a voltage generator configured to generate a plurality of voltages, the plurality of voltages comprising a first voltage for performing the first quantum gate operation and a second voltage for performing the second quantum gate operation. Optionally, the trap system is configured: to form a first potential well within the first zone, the first potential well configured to confine the first portion of the plurality of particles; and; to form a second potential well within the second zone, the second potential well configured to confine the second portion of the plurality of particles wherein: the first portion of the plurality of particles comprises at least a first particle and a second particle and the second portion of the plurality of particles comprises at least a third particle and a fourth particle. Optionally, the first particle and second particle comprise respective first and second positions in the first potential well and share a first motional mode frequency and a first alignment angle. The third particle and the fourth particle comprise respective third and fourth positions in the second potential well, and share a second motional mode frequency and a secondo alignment angle. Optionally, the trap system comprises: a first plurality of electrode modules comprising a first electrode module configured to receive the first voltage and a second electrode module configured to receive the second voltage. Optionally, the apparatus comprises a confinement module configured to: apply an electromagnetic signal to the first portion of the plurality of particles in the first zone, thereby confining the first portion of the plurality of particles in the first zone; and apply the electromagnetic signal to the second portion of the plurality of particles in the second zone, thereby confining the second portion of the plurality of particles in the second zone. Optionally, the electromagnetic signal is a laser signal, and the confinement module comprises an optical coupler configured to provide the laser signal to the first and second portions of the plurality of particles, to confine the portions of the plurality of particles in their respective zones. Optionally, the confinement module comprises: a second plurality of electrode modules comprising a third electrode module configured to receive the electromagnetic signal and a fourth electrode module configured to receive the electromagnetic signal; wherein: the third electrode module is coupled to the first zone; and the fourth electrode module is coupled to the second zone; such that when the electromagnetic signal is applied to the third electrode module and the fourth electrode module, the first particle and / or the second particle is confined in the first potential well and the third particle and / or the fourth particle is confined in the second potential well in parallel. Optionally, the electromagnetic signal comprises a laser, a magnetic field, or a magnetic field gradient. Optionally, the first electrode module is coupled to the first zone; and the second electrode module is coupled to the second zone; such that: if the first voltage is adjusted, the first zone is controlled to perform the first quantum gate operation on the first particle and / or the second particle confined in the first potential well; and / or if the second voltage is adjusted, the second zone is controlled to perform the second quantum gate operation on the third particle and / or the fourth particle confined in the second potential well. Optionally, the first voltage and / or the second voltage is a DC voltage. Optionally, the first quantum gate operation performed on the first particle comprises: adjusting the first position in the first potential well; and / or adjusting the first motional mode frequency; and / or adjusting the first alignment angle; and / or the first quantum gate operation performed on the second particle comprises: adjusting the first position in the first potential well; and / or adjusting the first motional mode frequency; and / or adjusting the second alignment angle. Optionally, the second quantum gate operation performed on the third particle comprises: adjusting the third position in the second potential well; and / or adjusting the second motional mode frequency; and / or adjusting the second alignment angle; and / or the second quantum gate operation performed on the fourth particle comprises: adjusting the fourth position in the second potential well; and / or adjusting the second motional mode frequency; and / or adjusting the second alignment angle. Optionally, the trap system is configured to confine one or more additional portions of the plurality of particles in one or more additional zones; and the control system is configured to perform one or more additional quantum gate operations on the one or more portions of the plurality of particles; wherein: the one or more additional portions of the plurality of particles each comprise two or more particles. According to a second aspect of the disclosure, there is provided a method of performing quantum gate operations comprising: confining a first portion of a plurality of particles in a first zone of a trap system; confining a second portion of the plurality of particles in a second zone of the trap system; performing a first quantum gate operation on the first portion of the plurality of particles using a control system; and performing a second quantum gate operation on the second portion of the plurality of particles using the control system; wherein: the first portion and the second portion of the plurality of particles each comprise two or more particles. It will be appreciated that the method of the second aspect may include providing and / or using features set out in the first aspect and can incorporate other features as described herein. BRIEF DESCRIPTION OF THE DRAWINGS The disclosure is described in further detail below by way of example only with reference to the accompanying figures, in which: Figure 1(a) is an example diagram of an apparatus for performing quantum gate operations according to the present disclosure; Figure 1(b) is another example diagram of an apparatus for performing quantum gate operations according to the present disclosure; Figure 2(a) is another example diagram of an apparatus for performing quantum gate operations according to the present disclosure; Figure 2(b) is another example diagram of an apparatus for performing quantum gate operations according to the present disclosure; Figure 3 is a diagram showing an example embodiment of an ion trap system according to the present disclosure; Figure 4 is another example diagram of an apparatus for performing quantum gate operations according to the present disclosure; Figure 5(a) is a diagram showing an example embodiment of a control system according to the present disclosure; Figure 5(b) is a diagram showing an example embodiment of a first controller that can be used in the control system of Figure 5(a); Figure 5(c) is a diagram showing another example embodiment of the first controller that can be used in the control system of Figure 5(a); and Figure 5(d) is an example diagram of an apparatus for performing quantum gate operations, the apparatus comprising the control system of Figure 5(a); and Figure 6 is a flow chart of an example method for performing quantum gate operations according to the present disclosure. DETAILED DESCRIPTION An apparatus for quantum computing purposes may comprise a trapped ion system for trapping ions. The trapped ion system comprises at least one zone comprising one or more qubits on which quantum gate operations are performed. In the context of the present disclosure, a zone is a distinct spatial region of the ion trap system defined by potential wells in three dimensions which are nominally far apart in the axial direction such that the qubits in one zone are independent from the qubits in another zone. The trapped ion system is configured to form a potential well in three dimensions to confine one or more ions. Once the ions are confined in the potential well, units of quantum information for quantum computing purposes can be encoded in their internal states. These units of information could be, for example, qubits or qudits. A qubit is formed by encoding an ion into a pair of energy states comprising a first state and a second state. The qubit states can be manipulated using electromagnetic signals, for example a laser or a magnetic field with energy is matched to the energy of the desired internal states. The trapped ion system may be configured to trap a plurality of ions across a plurality of zones. Each zone, therefore, may contain one or more ions encoded as a unit of information for quantum computing purposes. Hence, the trapped ion system may be configured to perform quantum gate operations on the qubits in each zone. A quantum gate may operate on one or more qubits. A quantum gate for changing the state of single-qubits independent of others may be referred to as a single-qubit gate. These single-qubit gates can be performed on multiple qubits in parallel. A quantum gate for operating on a set or a register of qubits (referred to generally as a plurality of qubits) may be referred to as a multi-qubit gate. A multi-qubit gate operation may involve multiple qubits, which could be both single-qubit operations on multiple ions, as well as two-qubit interactions. The specific case of a multi-qubit gate for entangling the state of two qubits can alternately be referred to as a two-qubit gate. A multi-qubit gate can comprise two-qubit gates on multiple pairs of ions simultaneously. It will be understood herein, that a "quantum gate” can operate on any number of qubits unless explicitly stated to the contrary. Quantum gate operations involve adjusting one or more parameters of the qubits confined in the one or more zones of the ion trap configured to function as a quantum gate, such as the position of the qubit in the well or the motional mode frequency of the ion. These adjustments are performed according to specific rules and configurations which allows for computations to be performed with the apparatus. Quantum gate operations also allow for the processing of quantum information. There are two ways to implement quantum gate operations: (1) parallel locally-tunable single-qubit gates In this implementation, two (or more) qubits can undergo a single-qubit quantum gate operation at the same time as each other (in parallel). As they are locally-tunable, each single-qubit gate may be controlled independently to undergo different operations. (2) addressed multi-qubit gates. Multi-qubit quantum gate operations have been performed by being addressed. In this implementation, two (or more) qubit pairs undergo the same multi-qubit quantum gate operation at the same time (in parallel). It is also possible to apply different quantum gate operations by performing them sequentially. However, a reliance on sequential operations increases the resources needed to implement such a method rendering the technique impractical for large quantum computers. It is an objective of the present disclosure to provide an apparatus which can perform quantum operations in parallel for quantum computing purposes. Figure 1(a) is a diagram of an apparatus 100 for performing quantum gate operations according to a first embodiment of the present disclosure. The quantum gate operations may be performed in parallel. The apparatus 100 comprises a trap system 110 for confining a plurality of particles (not shown) and a control system 150. The apparatus 100 may comprise or form part of a quantum computer. The particles may be, for example, atoms, molecules or ions. The trap system 110 is configured to confine a first portion of the plurality of particles in a first zone 120 and to confine a second portion of the plurality of particles in a second zone 130. The first portion and the second portion of the plurality of particles each comprises two or more particles. For example, the first portion of the plurality of particles may comprise at least a first particle and a second particle, whilst the second portion of the plurality of particles may comprise at least a third particle and a fourth particle. As discussed previously, the first portion of particles may be positioned in a different spatial region on the trap system 110 than the second portion of particles, as indicated by zones 120,130 in Figure 1(a) being spatially separated. These distinct regions may be referred to as “zones". The control system 150 is configured to perform a first quantum gate operation on the first portion of the plurality of particles and to perform a second quantum gate operation on the second portion of the plurality of particles. The first quantum gate operation and the second quantum gate operation are different operations. However, it will be appreciated that in further embodiments, the first quantum gate operation and the second quantum gate operation may be the same in accordance with the understanding of the skilled person. The control system 150 may be further configured to control the trap system 110 to confine the plurality of particles. The control system 150 may be configured to support the generation of an electromagnetic signal and / or the generation of a voltage or plurality of voltages. The electromagnetic signal may be, for example, a laser or magnetic field. In the example embodiments described below, the plurality of particles is a plurality of ions and the trap system 110 is an ion trap system 110. However, in alternative embodiments the apparatus 100 may be applied to atoms or molecules in accordance with the understanding of the skilled person. Figure 1(b) is a diagram of an apparatus 100 for performing quantum gate operations according to a second embodiment of the present disclosure. The quantum gate operations may be performed in parallel. The apparatus 100 comprises an ion trap system 110 for confining a plurality of ions (not shown) and a control system 150. The apparatus 100 may comprise or form part of a quantum computer. The plurality of ions may, for example, comprise a plurality of barium ions. In particular, the plurality of barium ions may be a plurality of odd-numbered isotopes of barium. For example, the plurality of ions may comprise a plurality of 137Ba* ions. It will be appreciated that in further embodiments, other ion species suitable for ion traps and quantum computing purposes may be used in accordance with the understanding of the skilled person. Each ion in the plurality of ions may be configured as a unit of information for quantum computing. The unit of information may be, for example, a qubit or a qudit. A qubit is formed by encoding the qubit states into a pair of energy states of the ion. The ion trap system 110 is configured to confine a first portion of the plurality of ions in a first zone 120 and to confine a second portion of the plurality of ions in a second zone 13O.The ion trap system 110 may be, for example, a Paul trap. It will be appreciated that in further embodiments, the ions may be used to encode other units of quantum information, for example qudits, in accordance with the understanding of the skilled person. It is to be understood whilst the embodiments herein are described with respect to qubits and multi-qubit gate operations, in alternative embodiments qudits may be used and multi-qudit gate operations may be performed in accordance with the understanding of the skilled person. The first portion and the second portion of the plurality of ions each comprises two or more ions. For example, the first portion of the plurality of ions may comprise at least a first ion and a second ion whilst the second portion of the plurality of ions may comprise at least a third ion and a fourth ion. As discussed previously, the first portion of ions may be positioned in a different spatial region on the ion trap system 110 than the second portion of ions, as indicated by the zones 120,130 in Figure 1 being separated spatially. The distinct regions may be referred to as "zones". The control system 150 is configured to perform a first quantum gate operation on the first portion of the plurality of ions and to perform a second quantum gate operation on the second portion of the plurality of ions. As the first portion and the second portion of the plurality of ions each comprise two or more ions, the first quantum gate operation is a first multi-qubit operation and the second quantum gate operation is a second multi-qubit gate operation. The first quantum gate operation and the second quantum gate operation are different operations. However, it will be appreciated that in further embodiments, the first quantum gate operation and the second quantum gate operation may be the same in accordance with the understanding of the skilled person. As the first portion and the second portion of the plurality of ions each comprise two or more ions, the first zone 120 and the second zone 130 each form a multi-qubit gate and the first quantum gate operation and the second quantum gate operation are multi-qubit gate operations. The control system 150 may be further configured to control the ion trap system 110 to confine the plurality of ions. The control system 150 may be configured to support the generation of an electromagnetic signal and / or the generation of a voltage or plurality of voltages. The electromagnetic signal may be, for example, a laser or a magnetic field. In summary, embodiments of the present disclosure can enable distinct multi-qubit gate operations to be performed in parallel across different zones of an ion trap system. This contrasts with the known systems as previously discussed, and specifically with (1) the parallel locally-tunable single qubit gates, which only provides single gate operation; and (2) addressed multi-qubit gates which are incapable of performing different qubit gate operations across different zones in parallel (at the same time). Embodiments of the present disclosure may provide parallel locally-tunable multi-qubit gates. The disclosure can be applied to any number of operations in multiple zones. Figure 2(a) is another example diagram of an apparatus 100 for performing quantum gate operations according to a third embodiment of the present disclosure. The apparatus 100 is the same as the same as the apparatus of Figure 1(b) except with the addition of a first plurality of electrode modules 210a, 210b and a confinement module 230. Hence, the same labelling has been kept and the components are taken to have the same functionality and meaning as for Figure 1(b). The ion trap system 110 comprises a first plurality of electrode modules 210a, 210b. The first plurality of electrode modules 210a, 210b comprises a first electrode module 210a configured to receive a first voltage VI and a second electrode module 210b configured to receive a second voltage V2. The first voltage VI and / or the second voltage V2 may be, for example, a DC voltage. The first electrode module 210a is coupled to the first zone 120 such that if the first voltage VI is adjusted then the first zone 120 is controlled to perform the first quantum gate operation on the first portion of the plurality of ions. The second electrode module 210b is coupled to the second zone 130 such thatif the second voltage V2 is adjusted then the second zone 130 is controlled to perform the second quantum gate operation on the second portion of the plurality of ions. It will be appreciated that alternative couplings between the first / second electrode module 210a, 210b and the first / second zones 120,130 may be implemented in accordance with the understanding of the skilled person. The apparatus 100 also comprises a confinement module 230. The confinement module is configured to apply an electromagnetic signal EMS to the first portion of the plurality of ions and the second portion of the plurality of ions. Once the electromagnetic signal EMS is applied, the first portion of the plurality of particles are confined in the first zone 120, and the second portion of the plurality of particles are confined in the second zone 130. The electromagnetic signal EMS could be, for example, a laser signal. In such embodiments, the confinement module 230 comprises an optical coupler (not shown) configured to provide the laser signal to the first and second portions of the plurality of ions in order to confine the portions of the plurality of ions in their respective zones. Figure 2(b) is another example diagram of an apparatus 100 for performing quantum gate operations according to a fourth embodiment of the present disclosure. The apparatus 100 is the same as the apparatus of Figure 1(b) except with the addition of a first plurality of electrodes 210a, 210b and a second plurality of electrode modules 220a, 220b. Hence, the same labelling has been kept and the components are taken to have the same functionality and meaning as for Figure 1(b). The ion trap system 110 comprises a first plurality of electrode modules 210a, 210b. The first plurality of electrode modules 210a, 210b comprises a first electrode module 210a configured to receive a first voltage VI and a second electrode module 210b configured to receive a second voltage V2. The first voltage VI and / or the second voltage V2 may be, for example, a DC voltage. The first electrode module 210a is coupled to the first zone 120 such that if the first voltage VI is adjusted then the first zone 120 is controlled to perform the first quantum gate operation on the first portion of ions. The second electrode module 210b is coupled to the second zone 130 such that if the second voltage V2 is adjusted then the second zone 130 is controlled to perform the second quantum gate operation on the second portion of ions. It will be appreciated that alternative couplings between the first / second electrode module 210a, 210b and the first / second zones 120, 130 may be implemented in accordance with the understanding of the skilled person. The first electrode module 210a may comprise one or more electrodes. In the example embodiments of the present disclosure, the first electrode module 210a comprises two electrodes which form an electrode pair. However, it is to be understood that in alternative embodiments different numbers and configurations of electrodes can be used in accordance with the understanding of the skilled person. The second electrode module 210b may comprise one or more electrodes. In the example embodiments of the present disclosure, the second electrode module 210b comprises two electrodes which form an electrode pair. However, it is to be understood that in alternative embodiments different numbers and configurations of electrodes can be used in accordance with the understanding of the skilled person. In this embodiment, the confinement module 230 comprises a second plurality of electrode modules 220a, 220b. The second plurality of electrode modules 220a, 220b comprises a third electrode module 220a configured to receive an electromagnetic signal and a fourth electrode module 220b configured to receive the same electromagnetic signal. The electromagnetic signal may be, for example, a magnetic field or a laser. The third electrode module 220a is coupled to the first zone 120 and the fourth electrode module 220b is coupled to the second zone 130. Therefore, when the electromagnetic signal is applied to the third electrode module 220a and the fourth electrode module 220b, the plurality of ions (not shown) are confined within the first zone 120 and the second zone 130 in parallel. It will be appreciated that alternative couplings between the third / fourth electrode module 220a, 220b and the first / second quantum gate 120, 130 may be implemented in accordance with the understanding of the skilled person. The third electrode module 220a may comprise one or more electrodes or one or more optical couplers. In the example embodiments of the present disclosure, the third electrode module 220a comprises two electrodes which form an electrode pair. However, it is to be understood that in alternative embodiments different numbers and configurations of electrodes can be used in accordance with the understanding of the skilled person. Furthermore, it is to be understood that in alternative embodiments the third electrode module 220a may comprise an optical coupler configured to direct a laser signal. The fourth electrode module 220b may comprise one or more electrodes or one or more optical couplers. In the example embodiments of the present disclosure, the fourth electrode module 220b comprises two electrodes which form an electrode pair. However, it is to be understood that in alternative embodiments different numbers and configurations of electrodes can be used in accordance with the understanding of the skilled person. Furthermore, it is to be understood that in alternative embodiments the fourth electrode module 220b may comprise an optical coupler configured to direct a laser signal. In the example embodiments described below, the confinement module 230 comprises the second plurality of electrodes 220a, 220b. However, in alternative embodiments, the confinement module 230 may comprise an optical coupler in accordance with the understanding of the skilled person. Figure 3 is an example embodiment of an ion trap system 110 according to a fifth embodiment of the present disclosure. The ion trap system 110 could be, for example, a Paul trap. The example embodiment of the ion trap system 110 may be implemented within any apparatus 100 of the present disclosure. In this example embodiment, the ion trap system 110 is configured to trap barium ions. The ion trap system 110 and the control system 150 are taken to be the same as the ion trap system and control system of Figure 1 and Figure 2 except for the addition of an ion trap 310, a vacuum chamber 320, an ion source 330, a pair of magnetic field coils 340a, 340b ,a fluorescence detector 350, and a qubit manipulation system 360. Hence, the same labelling has been kept and components are taken to have the same functionality and meaning as for Figure 2 and Figure 3. The ion trap system 110 comprises at least one ion trap 310 and a vacuum chamber 320, wherein the ion trap 310 is located within the vacuum chamber 320. The ion trap 310 may comprise the first zone 120 and the second zone 130 (not shown in Figure 3). In the example embodiment of the ion trap system 110 of Figure 3, the first plurality of electrode pairs 210a, 210b are disposed on the ion trap 310. The ion trap system 110 may also comprise an ion source 330 configured to provide the plurality of ions to the ion trap. The ion source 330 may comprise a neutral atom source (not shown) and an ionisation device (not shown). The ion trap system 110 may further comprise a pair of magnetic field coils 340a, 340b and a fluorescence detector 350. It will be appreciated that in further embodiments, alternative ion trap system 110 configurations may be used, in accordance with the understanding of the skilled person. The ion trap 310 is configured to trap the plurality of ions and is situated within the vacuum chamber 320. The ion trap 310 is coupled to the ion source 330 which is configured to provide the plurality of ions to the ion trap 310. In this example embodiment, the ion source 330 is a barium ion source. It will be appreciated that in further embodiments, alternative ion sources may be used, in accordance with the understanding of the skilled person. The ion source 330 comprises a neutral atom source to provide a plurality of neutral atoms and an ionisation device configured to ionise the plurality of neutral atoms and hence provide the plurality of ions. The neutral atom source and the ionisation device are not shown in the Figure. The neutral atom source could be, for example, a resistively heated atomic oven or an ablation target. The ionisation device could be, for example, a network of lasers of various operational wavelengths. The pair of magnetic field coils 340a, 340b may be positioned within the vacuum chamber 320 or outside the vacuum chamber 320 and are configured to apply a magnetic field to the ion trap 310. The qubit manipulation system 360 may comprise a pair of antennas (not shown). The qubit manipulation system 360 is configured to encode the first ion in a first and second energy state such that the ion is encoded as a qubit. Figure 4 is another example diagram of an apparatus 100 for performing quantum gate operations according to a sixth embodiment of the present disclosure. The apparatus 100 is the same as the apparatus of Figure 1 and Figure 2 except with the addition of a first potential well 410a, a second potential well 410b, a first ion 420a, a second ion 420b, a third ion 420c and a fourth ion 420d. Hence, the same labelling has been kept and the components are taken to have the same functionality and meaning as for Figure 1 and Figure 2. The ion trap system 110 is configured to form a first potential well 410a within the first zone 120. The first potential well 410a is configured to confine the first portion of the plurality of ions. The first portion of the plurality of ions comprises at least a first ion 420a and a second ion 420b. It will be appreciated that in alternative implementations, the first portion of the plurality of ions may comprise three or more ions in accordance with the understanding of the skilled person. Ions in a potential well can be characterised in terms of their position (r) in the well, their motional mode frequency (f), and their alignment angle (a). It will be appreciated that when a plurality of ions are provided in a well, their motional frequencies and alignment angles will be shared. The first and second ions 420a, 420b comprises respective first and second positions n, n in the first potential well 410a, and first motional mode frequency fi and a first alignment angle ai. It is understood that the first and second positions n, r2 in the first potential well 410a, the motional mode frequency fi and the first alignment angle ai are properties of the first ion 420a and the second ion 420b which may be adjusted when the first quantum gate operation is performed on the first ion 420a and / or the second ion 420b. The ion trap system 110 is further configured to form a second potential well 410b within the second zone 130. The second potential well 410b is configured to confine the second portion of the plurality of ions. The second portion of the plurality of ions comprises at least a third ion 420c and a fourth ion 420d. It will be appreciated that in alternative implementations, the second portion of the plurality of ions may comprise three or more ions in accordance with the understanding of the skilled person. The third and fourth ions 420c, 420d comprise respective third and fourth positions rs, n in the second potential well 410b, a second motional mode frequency f? and a second alignment angle aa. It is understood that the third and fourth positions rs, n in the potential well 410b, the second motional mode frequency f2 and the second alignment angle «2 are properties of the third ion 420c and the fourth ion 420d which may be adjusted when the second quantum gate operation is performed on the third ion 420b and / or the fourth ion 420d. The first ion 420a, the second ion 420b, the third ion 420c and the fourth ion 420d may be, for example, a first barium ion, a second barium ion, a third barium ion and a fourth barium ion. In particular, the first ion 420a, the second ion 420b, the third ion 420c and the fourth ion 420d may be a first odd-numbered isotope of barium, a second odd-numbered isotope of barium, a third odd-numbered isotope of barium and a fourth odd-numbered isotope of barium. The first ion 420a, the second ion 420b, the third ion 420c and the fourth ion 420d may encoded into units of information for quantum computing such as qubits or qudits. In the context of the present disclosure, the motional mode frequency of an ion describes the physical motion of the ion in the zone. When one or more ions are confined in an ion trap system 110 of the present disclosure they physically oscillate with a given frequency. This frequency is the motional mode frequency. In the context of the present disclosure, the alignment angle is the orientation of the motional mode with respect to a surface or magnetic field gradient, or laser. In operation, when the electromagnetic signal is applied to the third electrode pair 220a and the fourth electrode pair 220b, the first ion 420a and / or the second ion 420b and the third ion 420c and / or the fourth ion 420d are confined in the first potential well 410a and the second potential well 410b in parallel. The electromagnetic signal may be, for example, a laser or a magnetic field. If the first voltage VI applied to the first electrode pair 210a is adjusted, the first zone 120 is controlled to perform the first quantum gate operation on the first ion 420a and / or the second ion 420b. The first quantum gate operation may comprise adjusting the first position n and / or the second position rz in the first potential well 410a, adjusting the first motional mode frequency ft and / or the second motional mode frequency fz and / or adjusting the first alignment angle ai and / or the second alignment angle az. If the second voltage V2 applied to the second electrode pair 210b is adjusted, the second zone 130 is controlled to perform the second quantum gate operation on the third ion 420c and / or the fourth ion 420d. The second operation may comprise adjusting the third position rs and / or the fourth position n in the second potential well 410b, adjusting the third motional mode frequency fs and / or the fourth motional mode frequency ft and / or adjusting the third alignment angle as and / or the fourth alignment angle cu. The first voltage VI and / or the second voltage V2 may be, for example, a DC voltage. It will be appreciated that in alternative embodiments and implementations, other quantum gate operations may be performed in accordance with the understanding of the skilled person. In the context of quantum computing, adjusting the position, motional mode frequency and / or the alignment angle of the ions affects the performance of the quantum computer as it changes the quantum gate errors for the apparatus 100. In the context of the present disclosure, a gate error is how much the quantum gate operation performed differs from the theoretical prediction. Adjusting these parameters can also have an effect on how fast the quantum computer performs computations and processes information. For example, higher motional mode frequencies may allow for faster quantum gate operations, for certain quantum gate operations. Figure 5(a) is an example embodiment of a control system 150 according to a seventh embodiment of the present disclosure. The example embodiment of the control system 150 may be implemented with any apparatus 100 of the present disclosure. In this example embodiment, the control system 150 comprises a first controller 160 and a second controller 170. The first controller 160 is configured to perform a third quantum gate operation on the plurality of ions and / or confine the plurality of ions. The second controller 170 is configured to perform the first quantum gate operation and the second quantum gate operation. In a specific embodiment, the first controller 160 is configured to perform the third quantum gate operation on the plurality of ions, which may comprise the first and second portions of the plurality of ions. The first controller 160 can therefore enable the same quantum operation (the third quantum gate operation) to be applied to multiple qubits at once. This may be referred to as "global drive delivery". The second controller 170 may also be used to provide local control of multiple zones through distinct first and second quantum gate operations applied to the first and second zones, respectively. The first controller 160 comprises an electromagnetic signal generator 160a configured to generate an electromagnetic signal EMS for confining and manipulating the first portion of the plurality of ions in the first zone 120 and for confining the second portion of the plurality of ions in the second zone 130. The electromagnetic signal generator 160a could be, for example, a laser or a maser. The electromagnetic signal could be, for example, a magnetic field or laser light. The second controller 170 comprises a voltage generator 170a configured to generate a plurality of voltages VI, V2 for performing the first quantum gate operation and the second quantum gate operation. The plurality of voltages VI, V2 comprises a first voltage VI and a second voltage V2. The voltage generator 170a may be, for example, DC voltage generator. The first voltage VI and / or the second voltage V2 may be, for example, a DC voltage. It will be appreciated that in alternative embodiments the electromagnetic signal EMS and the plurality of voltages VI, V2 may be generated through other methods in accordance with the understanding of the skilled person. In operation, the electromagnetic signal generator 160a generates electromagnetic signal EMS which is transmitted to the third electrode pair 220a and the fourth electrode pair 220b. The third electrode pair 220a and the fourth electrode pair 220b are each configured to receive the electromagnetic signal EMS. The first zone 120 is coupled to the third electrode pair 220a and the second zone 130 is coupled to the fourth electrode pair 220b. Hence, when the electromagnetic signal EMS is applied to the third electrode pair 220a and the fourth electrode pair 220b, the first plurality of ions are confined in the first zone 120 and the second portion of the plurality of ions are confined in the second zone 130 in parallel. In operation, the voltage generator 170a generates the plurality of voltages VI, V2 comprising the first voltage VI and the second voltage V2. The first voltage VI is transmitted to the first electrode pair 210a and the second voltage V2 is transmitted to the second electrode pair 210b. The first electrode pair 210a is configured to receive the first voltage VI, whilst the second electrode pair 210b is configured to receive the second voltage V2. The voltage generator 170a is further configured to adjust the first voltage VI and the second voltage V2. The first voltage VI and the second voltage V2 may be adjusted independently. The first electrode pair 210a is coupled to the first zone 120 such that if the first voltage VI is adjusted, the first zone 120 is controlled to perform the first quantum gate operation on the first portion of the plurality of ions. The second electrode pair 210b is coupled to the second zone 130 such that if the second voltage V2 is adjusted, the second zone 130 is controlled to perform the second quantum gate operation on the second portion of the plurality of ions. As the first voltage VI can be adjusted independently from the second voltage V2, the first quantum gate operation and the second quantum gate operation may be performed independently. Further, the first quantum gate operation may be a different operation from the second quantum gate operation. Figure 5(b) is an example embodiment of the first controller 160 according to an eighth embodiment of the present disclosure ("How to Wire a 1000-Qubit Trapped-lon Quantum Computer” by M. Malinowski, D.T.C. Allcock and C.J. Ballance (PRX Quantum 4, 040313 - Published 19 October 2023)). The example embodiment of the first controller 160 may be implemented with any apparatus 100 of the present disclosure. In this example embodiment, the first controller 160 is implemented as an integrated microwave source. In this example embodiment, a microwave conductor 500 provides the same functions as the previous third electrode pair 220a and the fourth electrode pair 220b. The first controller 160 comprises a current generator 160a. When a current is generated and applied to the microwave conductor (see 500, together with 220a, 220b), a magnetic field is generated across the first quantum gate zone 120 and the second quantum gate zone 130. This microwave radiation is the electromagnetic signal EMS. The magnetic field will also be generated in other zones. Figure 5(c) is another example embodiment of the first controller 160 according to a nineth embodiment of the present disclosure (“How to Wire a 1000-Qubit Trapped-Ion Quantum Computer” by M. Malinowski, D.T.C. Allcock and C.J. Balance (PRX Quantum 4, 040313 - Published 19 October 2023). This example embodiment of the first controller 160 may be implemented with any apparatus 100 of the present disclosure. In this example embodiment, the first controller 160 is implemented as laser and a trap-integrated waveguide. In this example embodiment, the first controller 160 comprises a laser which generates laser light. The laser light is the electromagnetic signal EMS in this embodiment. The laser light EMS is passively split into several beams to be delivered to the first zone 120 and the second zone 130. Figure 5(d) is another example diagram of an apparatus 100 for performing quantum gate operations according to a tenth embodiment of the present disclosure. The apparatus 100 is the same as the apparatus of Figures 1, 2, 4 and 5(b). Hence the same labelling has been kept and the components are taken to have the same functionality and meaning as for Figures 1, 2, 4 and 5(b). The control system 150 is the same as the control system of Figure 5(a). Hence, the same labelling has been kept and the components are taken to have the same functionality and meaning as for Figure 5(a). In operation, the electromagnetic signal generator 160a generates electromagnetic signal EMS which is transmitted to the third electrode pair 220a and the fourth electrode pair 220b. The electromagnetic signal EMS may be, for example, a laser or a magnetic field. When the electromagnetic signal EMS is applied to the third electrode pair 220a and the fourth electrode pair 220b, the first ion 420a and / or the second ion 420b are confined in the first potential well 410a and the third ion 420c and / or the fourth ion 420d are confined in the second potential well 410b in parallel. The first ion 420a,the second ion 420b, the third ion 420c and the fourth ion 420d may each be used to encode units of information for quantum computing The unit of information for quantum computing may be, for example, a qubit or a qudit. It will be appreciated that in alternative implementations, the first potential well 410a and / or the second potential well 420a may comprise three or more ions in accordance with the understanding of the skilled person. The voltage generator 170a generates a plurality of voltages VI, V2, comprising the first voltage VI and the second voltage V2. The first voltage VI is transmitted to the first electrode pair 210a and the second voltage is transmitted to the second electrode pair 210b. The voltage generator 170a is further configured to adjust the first voltage VI and the second voltage V2. The first voltage VI and the second voltage V2 can be adjusted independently. If the first voltage VI is adjusted, the first zone 120 is controlled to perform the first quantum gate operation on the first ion 420a and / or the second ion 420b. The first quantum gate operation may comprise adjusting the first position r । and / or the second position 1'2 in the first potential well 410a, adjusting the first motional mode frequency fi and / or the second motional mode frequency f2 and / or adjusting the first alignment angle aiand / or the second alignment angle «2. If the second voltage V2 is adjusted, the second zone 130 is controlled to perform the second quantum gate operation on the third ion 420c and / or the fourth ion 420d. The second operation may comprise adjusting the third position rs and / or the fourth position n in the second potential well 410b, adjusting the third motional mode frequency fs and / or the fourth motional mode frequency ft and / or adjusting the third alignment angle as and / or the fourth alignment angle a4. The first voltage VI and / or the second voltage V2 may be, for example, a DC voltage. It will be appreciated that in alternative embodiments and implementations, other quantum gate operations may be performed in accordance with the understanding of the skilled person. As the first voltage VI can be adjusted independently from the second voltage V2, the first quantum gate operation and the second quantum gate operation may be performed independently. Hence, the first quantum gate operation may be a different operation to the second quantum gate operation. However, in alternative embodiments, the first quantum gate operation and the second quantum gate operation may be the same. In other embodiments, the ion trap system 110 maybe configured to confine one or more additional portions of the plurality of ions in one or more additional zones and the control system 150 may be configured to perform one or more additional quantum gate operations on the one or more portions of the plurality of ions. The one or more additional portions of the plurality of ions may each comprise two or more ions. Herein is described a specific example of performing parallel quantum gate operation using any apparatus 100 of the present disclosure. The quantum gate operation being performed is a rotation RxxQQj about the X-X axis. The example below describes how to perform the rotation Rxx(9) for an apparatus 100 for performing one or more two-qubit gates. A multi-qubit gate configured for quantum computing purposes may be described by one or more continuously variable parameters {0} which may be, for example, rotation angles. Rotation angles are just one of the metrics that may be used for the purposes of quantum gate operations. For a two qubit gate, the quantum gate operation of a rotation about the X-X axis is given by the following matrix: Rxx(t9) =exp(-i^X®x) To implement the rotation Rxx(9) in parallel to multiple two-qubit gates whilst also implementing the quantum gate operation in a locally-tunable way the following steps may be taken. Locally adjust the voltages on electrode pairs for each zone i such as to locally adjust the position rj, the motional mode frequency nand the alignment angle co. Apply the electromagnetic source for duration t. The electromagnetic source may be delivered as a pulse of laser light or magnetic field to each of the zones in order to implement the quantum gate in parallel. It is to be understood that in alternative implementations, the voltages do not need to be applied to electrode pairs in accordance with the understanding of the skilled person. Whilst a multi-qubit operation example has been given here, it is to be understood that the apparatus of the present disclosure may be used for single-qubit operations in accordance with the understanding of the skilled person. To implement identical parallel operations in each zone, requires the rotational angle d to be the same for each zone. This is achieved this by adjusting the voltages applied to each zone in order to adjust the positions n, motional mode frequencies f, and the alignment angles % accordingly. This is performed to compensate for any device non-uniformity. To implement non-identical operations in each zone, the rotation angle 9 needs to be different for each zone. Again, this is achieved by adjusting the combination of the positions n, motional mode frequencies f, and the alignment angles as by adjusting the voltage applied to the zone. For example, the rotation angle 6 is inversely proportional to the difference in motional mode frequency fi for ions’ in a particular zone and the frequency of the electromagnetic signal. If the voltages applied to the zones was adjusted such that this difference became twice as large, the rotation angle 5 would be halved. As the voltages applied to different zones can be adjusted independently, one zone may have a rotation angle of 9 = n / 2 whilst another zone may have a rotation angle of d = tt / 4. This adjustment is not limited to just integer of a particular rotation angle 9 and finer control can be achieved by adjusting the alignment angle at. For example, in a specific embodiment, the first zone 120 may be controlled by the second controller 170 to apply the RxxfOl) operation to the first portion of the plurality of ions using a first set of parameters for a specific 01 value. The second zone 130 may be controlled by the second controller 170 to apply the Rxx(02j operation to the second portion of the plurality of ions using a second set of parameters for a specific 02 value. Therefore, embodiments of the present disclosure enable both zones 120,130 to undergo different RxxQO] operations. Figure 6 is a flow chart of an example method 600 for performing quantum gate operations according to a eleventh embodiment of the present disclosure. The method 600 comprises steps 610, 620, 630 and 640. The method 600 may be performed with any apparatus 100 of the present disclosure. The first step 610 of the method 600 involves confining a first portion of a plurality of particles in a first zone of a trap system. In the second step 620, a second portion of a plurality of particles is confined in a second zone of the trap system. The third step 630 of the method 600 involves performing a first quantum gate operation on the first portion of the plurality of particles using a control system. Finally at step 640 a second quantum gate operation is performed on the second portion of the plurality of particles using the control system. The first portion and the second portion of the plurality of particles each comprise two or more particles. Therefore, the first zone and the second zone each form a multi-qubit gate such that the first quantum gate operation and the second quantum gate operation are each multi-qubit gate operations. 31 It will be appreciated that the apparatuses of the present disclosure may be apparatuses for performing quantum gate operations for quantum computing purposes. Further embodiments may relate to apparatuses for performing parallel quantum gate operations for other purposes, in accordance with the understanding 5 of the skilled person. A skilled person will appreciate that variations of the disclosed arrangements are possible without departing from the disclosure. Accordingly, the above description of the specific embodiments is made by way of example only and not for the 10 purposes of limitation. It will be clear to the skilled person that minor modifications may be made without significant changes to the operation described.

Claims

1. An apparatus for performing quantum gate operations comprising:a trap system configured to:confine a first portion of a plurality of particles in a first zone;confine a second portion of a plurality of particles in a second zone; anda control system configured to:perform a first quantum gate operation on the first portion of the plurality of particles; andperform a second quantum gate operation on the second portion of the plurality of particles; wherein:the first portion and the second portion of the plurality of particles each comprise two or more particles.

2. The apparatus of claim 1, wherein the control system is configured to perform the first and second quantum gate operation in parallel.

3. The apparatus of any preceding claim, wherein the control system is configured to control the trap system to confine the plurality of particles.

4. The apparatus of any preceding claim, wherein the apparatus comprises a quantum computer comprising the trap system.

5. The apparatus of claim 1, wherein the particles are atoms, molecules or ions.

6. The apparatus of any preceding claim, wherein each particle in the plurality of particles is configured as a unit of information for quantum computing.

7. The apparatus of any preceding claim, wherein the trap system comprises:a first plurality of electrode modules comprising a first electrode module configured to receive a first voltage and a second electrode module configured to receive a second voltage; wherein:the first electrode module is coupled to the first zone; andthe second electrode module is coupled to the second zone;such that if the first voltage and / or the second voltage is adjusted then the first zone and / or the second zone are controlled to perform the first quantum gate operation and / or the second quantum gate operation on the first portion and / or the second portion of the plurality particles.

8. The apparatus of claim 7 comprising a confinement module configured to: apply an electromagnetic signal to the first portion of the plurality of particles in the first zone, thereby confining the first portion of the plurality of particles in the first zone; andapply the electromagnetic signal to the second portion of the plurality of particles in the second zone, thereby confining the second portion of the plurality of particles in the second zone.

9. The apparatus of claim 8, wherein the electromagnetic signal is a laser signal, and the confinement module comprises an optical coupler configured to provide the laser signal to the first and second portions of the plurality of particles, to confine the portions of the plurality of particles in their respective zones.

10. The apparatus of claim 8, wherein the confinement module comprises: a second plurality of electrode modules comprising a third electrode module configured to receive the electromagnetic signal and a fourth electrode module configured to receive the electromagnetic signal; wherein:the third electrode module is coupled to the first zone; and the fourth electrode module is coupled to the second zone;such that when the electromagnetic signal is applied to the third electrode pair and the fourth electrode pair, the first portion of the plurality of particles are confinedwithin the first zone and the second portion of the plurality of particles are confined within the second zone in parallel.

11. The apparatus of claim 8, wherein the trap system comprises:a trap comprising the first zone and the second zone;a vacuum chamber, the trap being within the vacuum chamber; anda particle source coupled to the trap, the particle source configured to provide the plurality of particles to the trap.

12. The apparatus of any preceding claim, wherein the trap system is configured: to form a first potential well within the first zone, the first potential well configured to confine the first portion of the plurality of particles; andto form a second potential well within the second zone, the second potential well configured to confine the second portion of the plurality of particles; wherein:the first portion of the plurality of particles comprises at least a first particle and a second particle; andthe second portion of the plurality of particles comprises at least a third particle and a fourth particle.

13. The apparatus of claim 12, wherein:the first particle and second particle comprise respective first and second positions in the first potential well, a first motional mode frequency and a first alignment angle; and / orthe third and fourth particles comprise respective third and fourth positions in the second potential well, a second motional mode frequency and a second alignment angle.

14. The apparatus of claim 13, wherein the trap system comprises:a first plurality of electrode modules comprising a first electrode module configured to receive a first voltage and a second electrode module configured to receive a second voltage.

15. The apparatus of claim 14, wherein:the first electrode module is coupled to the first zone; andthe second electrode module is coupled to the second zone;such that:if the first voltage is adjusted, the first zone is controlled to perform the first quantum gate operation on the first particle and / or the second particle confined in the first potential well; and / orif the second voltage is adjusted, the first zone is controlled to perform the second quantum gate operation on the third particle and / or the fourth particle confined in the second potential well.

16. The apparatus of claim 15, wherein:the first quantum gate operation performed on the first particle comprises: adjusting the first position in the first potential well; and / or adjusting the first motional mode frequency; and / oradjusting the first alignment angle; and / orthe first quantum gate operation performed on the second particle comprises:adjusting the second position in the first potential well; and / or adjusting the first motional mode frequency; and / oradjusting the first alignment angle; and / orthe second quantum gate operation performed on the third particle comprises:adjusting the third position in the second potential well; and / or adjusting the second motional mode frequency; and / oradjusting the second alignment angle; and / orthe second quantum gate operation performed on the fourth particle comprises:adjusting the fourth position in the second potential well; and / or adjusting the second motional mode frequency; and / or adjusting the second alignment angle.

17. The apparatus of any preceding claim, wherein the control system comprises:a first controller configured to perform a third quantum gate operation on the plurality of particles and / or confine the plurality of particles; anda second controller configured to perform the first and second quantum gate operations.

18. The apparatus of claim 17, wherein:the first controller comprises an electromagnetic signal generator configured to generate an electromagnetic signal for performing the third quantum operation on the plurality of particles in the first zone and the second zone; andthe second controller comprises a voltage generator configured to generate a plurality of voltages, the plurality of voltages comprising a first voltage for performing the first quantum gate operation and a second voltage for performing the second quantum gate operation.

19. The apparatus of claim 18, wherein the trap system is configured:to form a first potential well within the first zone, the first potential well configured to confine the first portion of the plurality of particles; and;to form a second potential well within the second zone, the second potential well configured to confine the second portion of the plurality of particles wherein: the first portion of the plurality of particles comprises at least a first particle and a second particle and the second portion of the plurality of particle comprises at least a third particle and a fourth particle.

20. The apparatus of claim 19, wherein the trap system comprises:a first plurality of electrode modules comprising a first electrode module configured to receive the first voltage and a second electrode module configured to receive the second voltage.

21. The apparatus of claim 20, wherein:the first electrode module is coupled to the first zone; andthe second electrode module is coupled to the second zone;such that:if the first voltage is adjusted, the first zone is controlled to perform the first quantum gate operation on the first particle and / or the second particle confined in the first potential well; and / orif the second voltage is adjusted, the second zone is controlled to perform the second quantum gate operation on the third particle and / or the fourth particle confined in the second potential well.

22. The apparatus of claim 21, wherein:the first quantum gate operation performed on the first particle comprises: adjusting the first position in the first potential well; and / or adjusting the first motional mode frequency; and / or adjusting the first alignment angle; and / orthe first quantum gate operation performed on the second particle comprises:adjusting the second position in the first potential well; and / or adjusting the first motional mode frequency; and / oradjusting the first alignment angle.

23. The apparatus of claim 21, wherein:the second quantum gate operation performed on the third particle comprises:adjusting the third position in the second potential well; and / or adjusting the second motional mode frequency; and / oradjusting the second alignment angle; and / orthe second quantum gate operation performed on the fourth particle comprises:adjusting the fourth position in the second potential well; and / or adjusting the second motional mode frequency; and / oradjusting the second alignment angle.

24. The apparatus of any preceding claim, wherein:the trap system is configured to confine one or more additional portions of the plurality of particles in one or more additional zones; andthe control system is configured to perform one or more additional quantum gate operations on the one or more portions of the plurality of particles; wherein:the one or more additional portions of the plurality of particles each comprise two or more particles.

25. A method of performing quantum gate operations comprising:confining a first portion of a plurality of particles in a first zone of a trap system;confining a second portion of the plurality of particles in a second zone of the trap system;performing a first quantum gate operation on the first portion of the plurality of particles using a control system; andperforming a second quantum gate operation on the second portion of the plurality of particles using the control system; wherein:the first portion and the second portion of the plurality of particles each comprise two or more particles.

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