Processing apparatus having a storage chamber and an epitaxial reactor

Abstract

A processing apparatus (900) for an epitaxial reactor (1000) of the type for epitaxially depositing layers of semiconductor material at high temperatures on substrates of semiconductor material for the manufacture of electrical components, comprising a reaction chamber (100) for processing substrates, a transfer chamber (200) adjacent to the reaction chamber (100) for transferring substrates arranged on a substrate support device, a loading / unloading group (300) at least partially adjacent to the transfer chamber (200) arranged to accommodate a substrate support device with one or more substrates, and a storage chamber (400) at least partially adjacent to the loading / unloading group (300), comprising a first storage zone (410) for processed and / or unprocessed substrates and a second storage zone (410) for substrates without substrates. A processing apparatus (900) comprising: a storage chamber (300) having a second storage zone (420) for plate support devices; at least one external robot (500) for transporting processed substrates, unprocessed substrates, and substrate support devices having no substrates between the storage chamber (400) and the loading / unloading group (300); and at least one internal robot (600) for transporting substrate support devices having one or more substrates between the loading / unloading group (300) and the reaction chamber (100) via the transport chamber (200), wherein the external robot (500) has an articulated arm (510) configured to handle both processed and unprocessed substrates and substrate support devices.

Description

Technical Field

[0001] The present invention relates to a novel concept of an epitaxial reactor (for example, see the attached FIG. 1), particularly a reactor for epitaxial deposition of silicon carbide on a silicon carbide substrate for electrical and electronic applications.

Background Art

[0002] Reactors for epitaxial deposition have been known for decades.

[0003] Reactors for epitaxial deposition of silicon carbide have also been known for a long time, and in the past, the applicant himself has filed patent applications in this regard.

Summary of the Invention

[0004] The main innovations of the inventive epitaxial reactor (reactor) are the storage chamber (for example, 400 in FIG. 1), the loading / unloading group (for example, 300 in FIG. 1), and the transfer chamber (for example, 200 in FIG. 1). These three elements (chambers) can be considered as part of the so-called "processing device" (for example, 900 in FIG. 1) of the epitaxial reactor (for example, 1000 in FIG. 1) together with the reaction chamber (for example, 100 in FIG. 1).

[0005] In the reactor according to the present invention, the substrate is placed on the "substrate support device" before the processing process and removed from the "substrate support device" after the processing process, and these two operations are automatically performed in the storage chamber. The "substrate support device" can be configured to support and transfer one or more substrates that can be inserted into a special recess called a "pocket" at the same time, and thus is a kind of "tray" that is inserted into the reaction chamber and extracted from the reaction chamber. Particularly, a particularly advantageous "substrate support device" for the reactor according to the present invention has a disk shape and is schematically shown as an example in the attached FIG. 2 (FIG. 2A is a top view and FIG. 2B is a cross-sectional view) described below.

[0006] The general objective of this invention is to improve upon the prior art.

[0007] This objective is achieved by an apparatus having the technical features described in the attached claims.

[0008] One aspect of the present invention is also an epitaxial reactor comprising an apparatus that is the subject of the appended claims.

[0009] In particular, this relates to reactors for the epitaxial deposition of semiconductor material layers on substrates for the manufacture of electrical components at high temperatures (especially above 1,300°C and below 1,600°C). Instead, the process pressure is typically between 0.03 atm (=3,000 Pa) and 0.5 atm (50,000 Pa).

[0010] More specifically, the present invention relates to a reactor for epitaxial deposition configured to extract from a reaction chamber (treated) substrate at high temperatures (particularly above 400°C, and more specifically above 800°C).

[0011] More specifically, the present invention relates to a reactor for epitaxial deposition configured to introduce an (untreated) substrate into a reaction chamber at a high temperature (particularly above 400°C, and more specifically above 800°C).

[0012] Advantageously, the substrate to be processed and the substrate to be processed are placed on a "substrate support device".

[0013] The present invention will become more readily apparent from the following detailed description, which should be considered in conjunction with the accompanying drawings. [Brief explanation of the drawing]

[0014] [Figure 1] Figure 1 shows a schematic diagram (which can be considered a top view) of an embodiment of the epitaxial reactor according to the present invention, and is a diagram that shows the processing apparatus in particular detail. [Figure 2A] Figure 2A is a (schematic) top view of one embodiment of the "substrate support device" according to the present invention. [Figure 2B] Figure 2B is a (schematic) cross-sectional view of the "substrate support device" shown in Figure 2A. [Figure 3] Figure 3 is a schematic diagram showing an external robot for the storage chamber of an embodiment of the epitaxial reactor according to the present invention. [Figure 4A] Figure 4A is a top view of a tool that can be used in combination with the robot in Figure 3. [Figure 4B] Figure 4B is a cross-sectional view of a tool that can be used in combination with the robot in Figure 3. [Figure 5] Figure 5 is a (Schematic) top view of a station for preparing the loading / unloading group in an embodiment of the epitaxial reactor according to the present invention. [Figure 6] Figure 6 shows a schematic diagram (which can be considered a top view) of an embodiment of the epitaxial reactor according to the present invention, replacing that shown in Figure 1, and the processing apparatus is shown in particular detail. [Modes for carrying out the invention]

[0015] To make it easy to understand, there are various ways to actually carry out the present invention, and the present invention is defined in its main advantageous aspects in the appended claims and is not limited to the following detailed description or the appended claims.

[0016] Referring to Figure 1, an embodiment of the epitaxial reactor 1000 according to the present invention, including a so-called "processing device" 900, is shown.

[0017] The most typical and advantageous use of the present invention is in a reactor for epitaxially depositing a layer of semiconductor material (especially silicon carbide) on a substrate of semiconductor material (especially silicon carbide) for the manufacture of electrical components. These are reactors in which the epitaxial deposition process in the reaction chamber is carried out at high temperatures (especially higher than 1,300 °C and lower than 1,800 °C) and typically at pressures included between 0.03 atm (= 3,000 Pa) and 0.5 atm (50,000 Pa), and certain tests have been carried out by the applicant, for example, at 1,600 °C and 0.1 atm (10,000 Pa).

[0018] In Figure 1, depending on the function, an epitaxial reactor 1000, i.e., the whole system, or an electronic control unit 800 that can be regarded as part of its subsystem, i.e., a treatment device 900, is shown. Generally, an epitaxial reactor can be provided with several electronic control units each dedicated to the control of one or more subsystems. In the example of Figure 1, the electronic control unit 800 is arranged to control at least the treatment device 900, and for this purpose, it receives and transmits electrical signals with the components of the treatment device 900 (which is schematically represented by two large black arrows).

[0019] Generally, an epitaxial reactor including an epitaxial reactor according to the present invention comprises a control console that can also be regarded as part of the control unit of the epitaxial reactor.

[0020] The treatment device 900 consists of four basic components: - A reaction chamber 100 for processing the substrate - A transfer chamber 200 adjacent to the reaction chamber 100 - A loading / unloading group 300 at least partially adjacent to the transfer chamber 200 - A storage chamber 400 including at least partially the loading / unloading group 300.

[0021] Note that alternatively, chambers 200 and 300 may be integrated to form a single chamber.

[0022] According to a typical and advantageous embodiment of the present invention, the reaction chamber is of the type having a "hot wall" heated by induction. In particular, this is configured to be "hot" even when the epitaxial deposition process is not in progress, where the "hot" is lower than the "process temperature" but higher than the "ambient temperature", and can be equal to, for example, 30 - 70% of the "process temperature" expressed in degrees Celsius.

[0023] According to a typical and advantageous embodiment of the present invention, the reaction chamber can have technical features similar to those shown and described in international patent applications WO2004053187, WO2004053188, WO2007088420 and WO2015092525, which are incorporated herein by reference.

[0024] According to a typical and advantageous embodiment of the present invention, the reaction chamber comprises a susceptor configuration consisting of four susceptor elements ("walls") defining a reaction and deposition zone, and further, at least during the epitaxial deposition process, there is another susceptor element ("disk" or "cylinder") configured to stay inside the reaction and deposition zone and rotate around its axis. This other susceptor element is arranged to provide the remaining part for the "substrate support device", while the "substrate support device" is introduced into the reaction and deposition zone (having one or more untreated substrates) before the epitaxial deposition process and extracted from the reaction and deposition zone (having one or more processed substrates) after the epitaxial deposition process, and advantageously the "substrate support device" (and the substrate) is arranged when it is still hot at a temperature particularly higher than 500°C, or even higher (for example, 900°C or 1,000°C).

[0025] In the example in Figure 1, the loading / unloading group 300 advantageously consists of a load lock chamber 300A and a preparation station 300B that is associated with it (as will be better understood below), and in particular, these two elements are separate but close together (e.g., between 0 cm and 10 cm), and alternatively (see Figure 6), they can be integrated with each other.

[0026] In the example shown in Figure 1, the load lock chamber 300A is located entirely inside the chamber 400 and adjacent to the chamber 200.

[0027] In the example shown in Figure 1, the preparation station 300B is located entirely inside the chamber 400.

[0028] Generally, epitaxial reactors are equipped with so-called "gate valves" arranged to selectively separate reactor chambers. In the reactor of Figure 1, there is a first "gate valve" between chamber 100 and chamber 200, a second "gate valve" between chamber 200 and chamber 300A, and a third "gate valve" between chamber 300A and chamber 400 (not shown in the figure). Furthermore, a sealed door is preferably provided (not shown in the figure) to allow an operator to access the inside of chamber 400 and insert / remove substrates and substrate support devices.

[0029] As already mentioned, the reactor according to the present invention is expected to use a "substrate support device".

[0030] The “substrate support device” 2000 in Figure 2 is particularly advantageous for the reactor according to the present invention, having a recess (shown as 2100 in Figure 2A), a so-called “pocket,” a substantially circular shape that accommodates a substrate (shown in Figure 2A and 2900 in Figure 2B) of substantially the same shape and size as the recess, and a thin edge (shown as 2200 in Figure 2A) that protrudes radially along its entire circumference to facilitate handling of the “substrate support device.” The substrate has a so-called “flat surface”; in the recess (shown as 2100 in Figure 2A), a plug (shown as 2300 in Figure 2A) is present in the “flat surface” of the substrate.

[0031] Furthermore, the “substrate support device” 2000 in Figure 2 can be described by the following set of parts (see in particular Figure 2B). This comprises a circular plate-like component 2500, simply called a “plate,” having a remaining portion surface positioned to support the substrate 2900, the remaining portion surface being substantially the same shape and size as the substrate and forming the bottom of the recess 2100, and a plug (shown as 2300 in Figure 2A) conceptually superimposed on the plate 2500. The device 2000 further comprises a first edge portion 2600 that completely encloses the plate 2500 and extends axially to form the side wall of the recess 2100 (a small portion of this wall is formed by the plug 2300). The device 2000 finally comprises a second edge portion 2700 that completely encloses the first edge portion 2600 and extends radially. The second edge portion 2700 can be described as a flange located around the first edge portion 2600. Typically, plate 2500 is at a lower level than the second edge 2700. Edge 2200 in Figure 2A substantially corresponds to the second edge 2700 in Figure 2B. Note that the above-described parts can be joined to form one or more single parts; for example, parts 2500, 2600, and 2700 can form a single part, or part 2500 can form a first single part and parts 2600 and 2700 can form a second single part. Furthermore, note that each of the above-described parts can be formed by two or more mechanically joined single parts, an example relating to plate 2500 is described below.

[0032] Particularly advantageous is that the plate 2500 is divided into an annular portion or section 2520 and a central portion or section 2540, which are joined together, the annular portion or section 2520 being integral with the first edge portion 2600, and the central portion or section 2540 being inserted into a hole in the annular portion or section 2520, which can be raised and lowered relative to the annular portion or section 2520 acting from the outside of the “substrate support device” 2000 (particularly from below in Figure 2B), for example by a movable rod, and in the absence of such external action, the central portion or section 2540 remains in place by a suitable mechanical connection between the portion or section 2520 and 2540. When the substrate 2900 is inserted into the recess 2100, the substrate 2900 is also raised and lowered by raising and lowering the central portion or section 2540.

[0033] Particularly advantageous is that the remaining surface of plate 2500 is configured such that the substrate 2900 contacts only a small annular zone of plate 2500 near the first edge 2600. For example, the small annular zone may have a width of 1 to 5 mm and / or be located 1 to 3 mm radially from the first edge 2600. The distance between the substrate 2900 and the central zone of plate 2500 may be, for example, 0.5 to 1.5 mm.

[0034] Generally, according to the present invention, the processing apparatus includes the following: - Reaction chamber for processing the substrate (100 in the example in Figure 1) - A transport chamber (200 in the example of Figure 1) adjacent to the reaction chamber (100 in the example of Figure 1) for transporting substrates placed on the substrate support device. - A loading / unloading group (300 in the example of Figure 1) at least partially adjacent to a transport chamber (200 in the example of Figure 1) that is arranged to accommodate a substrate support device having one or more substrates. - A storage chamber (400 in the example of Figure 1) at least partially including a loading / unloading group (300 in the example of Figure 1), having a first storage zone (410 in the example of Figure 1) for processed and / or unprocessed substrates and a second storage zone (420 in the example of Figure 1) for substrate support devices without substrates. - At least one, and especially just one, external robot (500 in the example of Figure 1 - robots are indicated by symbols in this figure) for moving processed substrate, unprocessed substrate and substrate support without substrate between the storage chamber (400 in the example of Figure 1) and the loading / unloading group (300 in the example of Figure 1), especially in the case of abnormal operation of a nuclear reactor, the external robot can also move the substrate support with substrate. - A single internal robot (600 in the example of Figure 1; in this figure, the robot is indicated by a symbol) is provided for transporting a substrate support device having one or more substrates via a transport chamber (200 in the example of Figure 1) between the loading / unloading group (300 in the example of Figure 1) and the reaction chamber (100 in the example of Figure 1).

[0035] The external robot 500 is located at least partially inside the storage chamber 400, and the internal robot 600 is located at least partially inside the transport chamber 200.

[0036] In the example shown in Figure 1, the external robot 500 is also configured to perform arbitrary transfers within the loading / unloading group 300, in particular to transfer a substrate support unit having one or more substrates still to be processed from the preparation station 300B to the load lock chamber "300A", and to transfer a substrate support unit having one or more substrates that have already been processed from the "load lock" chamber 300A to the preparation station 300B.

[0037] The aforementioned (chamber) elements, particularly the loading / unloading group, can also play an active role when handling the substrate and / or "substrate support device," that is, they can include means configured to move the substrate.

[0038] In the reactor according to the present invention, the substrate is placed on the "substrate support device" before the processing process and removed from the "substrate support device" after the processing process, and these two operations are automatically performed by an external robot 500 in a storage chamber (400 in the example of Figure 1). A support device with an unprocessed substrate is transported from the loading / unloading group (300 in the example of Figure 1), particularly from its load lock chamber, to the reaction chamber (100 in the example of Figure 1) before the processing process, and the same support device with an unprocessed substrate is transported from the reaction chamber (100 in the example of Figure 1), to the loading / unloading group (300 in the example of Figure 1), particularly from its load lock chamber, after the processing process, and these two transport operations are automatically performed by an internal robot 600.

[0039] Typically, the same “substrate support device” can be used for several processing processes, and it should be noted that in the example described below, the same device is used for two processes. Before the first processing process, robot 500 takes the “substrate support device” from zone 420 and places it in station 300B, then places (at least) unprocessed substrates from zone 410 onto the “substrate support device” located in station 300B, robot 500 takes a processed substrate from the “substrate support device” located in station 300B, then before the second processing process, takes (at least) another unprocessed substrate from zone 410 and places it onto the “substrate support device” located in station 300B (e.g., from subzone 410A). Robot 500 then takes (at least) other processed substrates from the “substrate support device”. The board support device is placed in station 300B, then in zone 410 (for example, within subzone 410B), and finally, the robot 500 unloads the board support device from station 300B and places it elsewhere, for example, in zone 420. As previously mentioned, the external robot 500 is also typically configured to transport one or more board support devices with unprocessed boards from preparation station 300B to load lock chamber 300A, and to transport one or more board support devices with already processed boards from load lock chamber 300A to preparation station 300B.

[0040] Conceptually, external and internal robots are similar in that they can perform similar operations. Typically, both have an articulated arm consisting of three arm members and a so-called "end effector." Since the third arm member and the "end effector" of the internal robot are typically positioned to approach and enter a reaction chamber located at very high temperatures (800-1,600°C), it should be noted that they may be equipped with position sensors (e.g., "feeler" type) to assist in positioning the "end effector."

[0041] Innovations relating to the storage chamber are described below with non-limiting reference to the attached drawings (for example, those indicated as 400 in Figure 1), for this reason that the technical features of the embodiments shown in the drawings are referred to only as "possible".

[0042] The external robot 500 may include an articulated arm 510 configured to process both processed and unprocessed substrates, as well as substrate support devices.

[0043] The first storage zone 410 can be located on the first side of the storage chamber 400, and the second storage zone 420 can be located on the second side of the storage chamber 400, where in Figure 1 the second side is opposite to the first side, taking into account the position of the external robot 500.

[0044] The first storage zone 410 can be divided into a first subzone 410A for unprocessed substrates only, and a second subzone 410B for processed substrates only.

[0045] The storage chamber 400 may have a third storage zone (not shown in Figure 1) for support devices having a substrate, which may be suitable for use in abnormal situations, for example, requiring operator intervention, or the third storage zone may be used for test substrates and / or calibration substrates. Note that, according to some embodiments, in the event of an abnormal situation, the support device having a substrate may be stored in a second storage zone 420.

[0046] Advantageously, the electronic control unit of the epitaxial reactor offers the possibility of programming the positioning of untreated substrates and / or treated substrates and / or substrate support devices within the storage chamber, in particular, the positioning of each of them can be set not only horizontally but also vertically, and advantageously, the positioning of the substrate before processing can be different from the positioning of the same substrate after processing. In this way, there is maximum flexibility in positioning.

[0047] Typically, according to the present invention, multiple substrates can be arranged vertically within a zone or subzone of a storage chamber in a suitable box, at a certain distance from each other. Generally, the box can accommodate both untreated and treated substrates.

[0048] Typically, according to the present invention, multiple substrate support devices can be arranged above each other and at a certain distance from each other within a zone or subzone of a storage chamber in a suitable box.

[0049] According to a first possibility (not shown), the articulated arm comprises a first arm member and a second arm member, the first arm member being hinged to the second arm member, the first arm member having a first end positioned for handling (particularly gripping) an unprocessed substrate, a second end positioned for handling (particularly gripping) a substrate, and an intermediate portion hinged to the second arm member.

[0050] In this specification, the term “to grasp” is used to indicate a relatively firm contact between a first part called “to grasp” and a second part called “to grasp,” while the term “to handle” simply indicates that the two parts move together.

[0051] According to the second possibility (shown by example in Figure 3), the articulated arm 510 comprises a first arm member 512 and a second arm member 516, the first arm member 512 being hinged to the second arm member 516, and the first arm member 512 having a first end 513 and a substrate support device arranged to handle both processed and unprocessed substrates, and a second end 514 hinged to the second arm member 516.

[0052] The articulated arm 510 may also be equipped with a base 520.

[0053] The articulated arm 510 may also include a lifting column 511 mounted on the base 520.

[0054] Furthermore, the articulated arm 510 may include a third arm member 517, the first end of which is hinged to the second arm member 516, and the second end of which is hinged to the lifting column 511.

[0055] The first arm member 512 may have a so-called “end effector” 515, typically attached to or associated with the first end portion 513, and according to the embodiment example (typical and advantageous) of Figure 3, the “end effector” 515 may consist of a “fork having two ends.”

[0056] The first end 513 (in particular the “end effector” 515) can be positioned to connect with a tool 519 (see Figure 4) arranged to grip the substrate support device; the grip is typically direct and can be performed by friction, and possibly by suction.

[0057] The first end portion 513 (in particular the “end effector” 515) can be positioned to grip a substrate, the grip being typically direct and carried out by friction and suction. Alternatively, the first end portion 513 (in particular the “end effector” 515) can be positioned to connect with another tool (not shown) positioned to grip a substrate, the grip being typically direct and carried out by friction and possibly suction.

[0058] Thanks to the tool, the back surface of the substrate cannot be contaminated by particles and / or substances present on the back surface of the support device.

[0059] Figure 4 shows an embodiment of the tool, as a whole, designated reference numeral 519. Essentially a disk, its upper surface is positioned to contact a substrate support device, and its lower surface is positioned to contact an “end effector” (see Figure 3 in particular). The lower surface preferably has a shoulder 519-1 into which two of the “end effectors,” particularly their “tips,” can be inserted on the opposite side of the tool’s axis. The upper surface preferably has a thin recess 519-2 positioned to compensate for any imperfect planarity of the substrate support device. To enable stable and precise positioning of the tool 519, typically axial holes, e.g., cylindrical or conical, such as through holes or blind holes, can be provided.

[0060] For handling, and especially for gripping, the articulated arm 510 may be equipped with a suction duct. In Figure 3, the suction duct 518 is shown inside only the first arm member 512, but alternatively, it may be inside the second arm member 516 and / or the third arm member 517. The suction duct must be fluidly connected to a suction generator (not shown in the figure), for example, by a flexible tube. The suction duct 518 opens onto the surface of the “end effector” 515 and is designed to draw in objects that come into contact with the “end effector”. This suction may be localized at a point, or preferably distributed over a region (for example, a strip extending in a “U” shape in a similar manner to the “end effector” 515).

[0061] The storage chamber 400 may have a stationary position 450 for the tool 519. In this case, the external robot 500 may be positioned to take the tool 519 out of / from the stationary position 450, and in particular, if the robot must handle the support device, the "end effector" 515 approaches the stationary position 450, engages with the tool 519, moves away from the stationary position 450, handles the support device, approaches the stationary position 450, disengages from the tool 519, and moves away from the stationary position 450.

[0062] Innovations relating to the loading / unloading group are described below with non-limiting reference to the attached drawings (for example, those indicated as 300 in Figure 1), which is why the technical features of the embodiments shown in the drawings are referred to only as "possible".

[0063] The loading / unloading group 300, in particular the preparation station 300B (as shown in Figure 5), may include a base 310 for supporting the substrate support device.

[0064] The loading / unloading group 300, in particular the preparation station 300B (as shown in Figure 5), may include vertical moving means 320 for raising / lowering one or more substrates that are positioned on a substrate support device supported by a base 310.

[0065] The vertical movement mechanism 320 may comprise a movable rod positioned to raise / lower the central portion of the substrate support device, and a substrate placed on it (for example, consider the movable central portion or side 2540 of the device 2000 in Figure 2B). In this case, typically the diameter of the substrate is larger than the diameter of the central portion.

[0066] The base 310 can be positioned to rotate the substrate support (which is stationary on the base) by a (variable) angle, particularly a (variable) angle in the range of -360° (or more) to 360° (or more).

[0067] The loading / unloading group 300, in particular the preparation station 300B (as shown in Figure 5), may be equipped with horizontal moving means 330 for adjusting the horizontal position of the substrate support device supported by the base 310.

[0068] The horizontal movement means 330 may include at least one rotatable cam (in the embodiment shown in Figure 5, three cams 330A, 330B, and 330C are advantageously provided) arranged to cause displacement of the substrate support device.

[0069] The loading / unloading group 300, in particular the preparation station 300B (as shown in Figure 5), may include cleaning means 340 for a substrate support device supported by a base 310.

[0070] The cleaning means 340 may include, for example, at least one suction device positioned to cause suction from the top and / or sides of the peripheral region of the substrate support device, and in the embodiment of Figure 5, the suction region may be small (e.g., a few millimeters), or conversely, large (e.g., a few centimeters) or very large and may extend at most around the entire circumference, and in the embodiment of Figure 5, the suction device is rotatable, with a first angular position used for suction from the edge and a second angular position (shown in Figure 5) for resting.

[0071] The processing apparatus 900 may be equipped with a camera 350 (which may be called a “surveillance camera”) directed towards the region of interest 360 of the loading / unloading group 300, in particular the preparation station 300B (as shown in Figure 5), and in particular the camera 350 frame may include at least a support base 310, and therefore any substrate support device mounted on the base 310.

[0072] The camera can, for example, operate in visible light. In this case, natural light from the environment in which the reactor is installed can be used, or a lighting device can be provided.

[0073] It can be advantageous for a camera to operate with IR and / or UV light; in this case, a corresponding illumination device is required. Combining multiple types of light can be beneficial in ensuring the contours of various elements in the image captured by the camera are clearly visible.

[0074] The rotation angle of the substrate support device (mounted on the base 310) can be arranged to be calculated (for example, by the electronic control unit 800) starting from the image generated by the camera 350.

[0075] The displacement of the substrate support device (mounted on the base 310) may be arranged to be calculated (for example, by the electronic control unit 800) starting from an image generated by the camera 350.

[0076] The loading / unloading group 300, in particular the load lock chamber 300A, may be equipped with a cover (not shown) that is configured to be selectively opened and closed by its rotation, and a gate valve (configured to be selectively opened and closed) may be provided between the transfer chamber 200 and the load lock chamber 300A. Specifically, when the cover is open, the load lock chamber 300A is in contact with the storage chamber 400, and when the cover 370 is closed, the load lock chamber 300A is not in contact with the storage chamber 400.

[0077] Innovations relating to the transport chamber are described below with non-limiting reference to the attached drawings (for example, those indicated as 200 in Figure 1), for this reason that the technical features of the embodiments shown in the drawings are referred to only as "possible".

[0078] The processing apparatus 900 may include a cooling station 210 adjacent to the transport chamber 200, and the cooling station 210 is configured to house a substrate support device having one or more substrates after the processing process.

[0079] The internal robot 600 is, a) Normally, when the support device and substrates are still very hot, the substrate support device having one or more substrates is transported from the reaction chamber 100 to the cooling station 210, and then, b) Typically, after the support device and substrates have been sufficiently cooled, the substrate support device having one or more substrates is transported from the cooling station 210 to the loading / unloading group 300, particularly its load lock chamber 300A. It can be arranged in this way, Furthermore, the internal robot 600, c) A substrate support device having one or more substrates is transported from the loading / unloading group 300, particularly from its load lock chamber 300A, to the reaction chamber 100, typically while the support device having one or more substrates is being cooled in the cooling station 210. They can be arranged in this way.

[0080] A possible sequence of actions could be, for example, "A", "c", "b".

[0081] The processing apparatus 900 may also include a heating station 220 adjacent to the transport chamber 200, the heating station 220 being configured to accommodate a substrate support device having one or more substrates before the processing process.

[0082] Station 220 can be used to preheat a substrate support device with one or more substrates, but it can also be used simply to facilitate and / or speed up the transport operation through the transport chamber 200.

[0083] The internal robot 600 is, d) A substrate support device having one or more substrates is transported from the loading / unloading group 300, particularly its load lock chamber 300A, to the heating station 220, and thereafter, e) A substrate support device having one or more substrates is transported from the heating station 220 to the reaction chamber 100. It must be possible to arrange it in that way.

[0084] A possible sequence of actions could be, for example, "d", "A", "e", and "b".

[0085] Further possible innovations are listed below.

[0086] Advantageously, the processing apparatus may include a code reading and recognition system (e.g., barcodes, QR codes®, or alphanumeric codes) for reading codes on substrates and / or substrate support devices, a system not shown. Such a system can locate (at least partially) a location within a storage chamber (e.g., indicated by 400 in Figure 1). In this way, for example, a reactor can maintain a specific trajectory of substrates that have entered the reactor and / or are located within a storage chamber and still to be processed and / or are located within a storage chamber and have already been processed and / or have left the reactor. In this way, for example, a reactor can maintain a specific trajectory of supports that have entered the reactor and / or are located within a storage chamber (and possibly their locations), and / or are located within a reaction chamber and / or have left the reactor. Typically, to trace substrates and / or supports, the reading and recognition system works in cooperation with an electronic control unit (e.g., indicated by 800 in Figure 1).

[0087] Advantageously, the processing apparatus may include an electronic control unit (e.g., indicated as 800 in Figure 1) configured to store data relating to the use of (at least) one substrate support device, particularly the number and / or duration and / or type of processing processes. In this way, for example, if the reactor detects specific usage conditions associated with the substrate support device, the reactor can decide to avoid further use of it and / or inform the operator of the need to clean or replace it.

[0088] The two or more innovations mentioned above can be combined in a mutually beneficial way.

[0089] According to the embodiment shown in Figure 6, which is an alternative to the embodiment in Figure 1 (but is very similar, as is evident from the similarity between these two figures), the loading / unloading group 300 consists of a load lock chamber 300A and a preparation station 300B that are related to each other, and particularly advantageously integrated with each other. According to this embodiment, the processing apparatus has two conventional gate valves, but can be considered to have a load lock chamber with additional functions compared to a conventional load lock chamber.

[0090] This "integrated" solution allows for the avoidance of displacement between the "substrate support device" and the substrate, i.e., between the load lock chamber and the preparation station, by an internal robot, but complicates the structure of the load lock chamber, or rather, the structure of the loading / unloading group.

[0091] In the embodiment shown in Figure 6, the technical characteristics described with reference to Figure 5 can also be described as the preparation station 300B integrated within the loading / unloading group 300.

Claims

1. 1. A processing apparatus (900) for an epitaxial reactor (1000) of the type for epitaxially depositing at high temperature a layer of semiconductor material on a substrate of semiconductor material for the manufacture of electrical components, comprising: a reaction chamber (100) for processing a substrate; a transfer chamber (200) adjacent to the reaction chamber (100) for transferring a substrate disposed on a substrate support device; a loading / unloading group (300) at least partially adjacent to the transfer chamber (200) arranged to accommodate a substrate support device having one or more substrates; a storage chamber (400) at least partially adjacent to said loading / unloading group (300), said storage chamber (400) having a first storage zone (410) for processed and / or unprocessed substrates and a second storage zone (420) for substrate support devices without substrates; at least one external robot (500) for transporting processed substrates, unprocessed substrates and substrate support devices without any substrates between the storage chamber (400) and the loading / unloading group (300); at least one internal robot (600) for transferring a substrate support device having one or more substrates between the loading / unloading group (300) and the reaction chamber (100) through the transfer chamber (200); Including, The external robot (500) comprises an articulated arm (510) configured to handle both processed and unprocessed substrates and substrate support devices; the storage chamber (400) has a third storage zone for a substrate support device having a substrate; The processing apparatus (900), wherein the third storage zone is configured for use in the event of an abnormal situation.

2. 2. The processing apparatus (900) of claim 1, wherein the first storage zone (410) is located on a first side of the storage chamber (400) and the second storage zone (420) is located on a second side of the storage chamber (400), the second side being preferably opposite the first side.

3. 3. The processing apparatus (900) of claim 1 or claim 2, wherein the first storage zone (410) is divided into a first subzone (410A) for unprocessed substrates only and a second subzone (410B) for processed substrates only.

4. The processing apparatus (900) according to any of the preceding claims, wherein an electronic control unit provides the possibility to program the positioning of unprocessed substrates and / or processed substrates and / or substrate supporting devices in said storage chamber (400).

5. The processing device (900) of claim 4, wherein the positioning can be set horizontally and vertically.

6. The processing apparatus (900) of claim 5, wherein the positioning of the substrate can be set differently before and after processing.

7. The processing apparatus (900) of any one of claims 1 to 6, wherein the articulated arm comprises a first arm member and a second arm member, the first arm member hinged to the second arm member, the first arm member having a first end arranged to handle processed and unprocessed substrates, a second end arranged to handle a substrate support device, and an intermediate section hinged to the second arm member.

8. 7. The processing assembly (900) of any one of claims 1 to 6, wherein the articulated arm (510) includes a first arm member (512) and a second arm member (516), the first arm member (512) hinged to the second arm member (516), the first arm member (512) having a first end (513) configured to handle both processed and unprocessed substrates and a substrate support apparatus, and a second end (514) hinged to the second arm member (516).

9. 10. The processing apparatus (900) of claim 8, wherein the first end (513) is arranged to mate with a tool (519) arranged to grip a substrate support device.

10. The processing apparatus (900) of claim 9, wherein the first end (513) is positioned to grip a substrate.

11. 10. The processing apparatus (900) of claim 9, wherein the first end (513) is arranged to mate with a tool different from the tool (519) and arranged to grip a substrate.

12. The processing device (900) of any one of claims 9 to 11, wherein the storage chamber (400) has a rest position (450) for the tool (519), and the external robot (500) is arranged to transport the tool (519) from or to the rest position (450).

13. The processing device (900) of any one of claims 7 to 12, wherein said articulated arm (510) includes a suction duct (518), said suction duct (518) opening at least a first end of the arm member.

14. An epitaxial reactor (1000) of the type for epitaxially depositing at high temperatures, in particular at temperatures above 1300° C., a layer of semiconductor material on a substrate of semiconductor material for the manufacture of electrical components, the epitaxial reactor (1000) comprising a processing device (900) according to any one of claims 1 to 13.

15. 15. Epitaxial reactor (1000) according to claim 14, of the type arranged to extract a substrate from the reaction chamber at high temperatures, in particular at temperatures above 400°C, more in particular at temperatures above 800°C.

16. Epitaxial reactor (1000) according to claim 14 or claim 15, of the type arranged to introduce a substrate into the reaction chamber at an elevated temperature, in particular above 400° C., in particular above 800° C.

17. The epitaxial reactor (1000) of any one of claims 14 to 16, wherein the unprocessed substrate and the processed substrate are placed on a substrate support device.

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