Film deposition apparatus, drive method of film deposition apparatus and film deposition method

JP2024035289A5Pending Publication Date: 2025-09-04CANON TOKKI CORP
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Patent Information

Application Number
JP2022139656
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Filing Date
2022-09-02
Publication Date
2025-09-04

AI Technical Summary

Technical Problem

Larger substrates are prone to bending, making it difficult to properly adsorb them to the adsorption member in film forming apparatuses.

Method used

The film forming apparatus includes a first support member for the peripheral edge of the substrate, a second support member extending along the film-forming side surface, and a drive unit that rotates the second support member around a perpendicular axis to stabilize the substrate before and during adsorption.

Benefits of technology

The solution stabilizes the substrate, allowing it to be securely adsorbed to the attraction member without deformation, ensuring accurate alignment and film formation.

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Abstract

To provide a film deposition apparatus capable of adsorbing a substrate to an adsorption member in a stable state.SOLUTION: A film deposition apparatus includes: an electrostatic chuck 31 adsorbing a surface opposite to a surface in a film deposition side of a substrate S; a first support member 41 for supporting a circumference of the substrate S at least before or after an adsorption of the substrate S to the electrostatic chuck 31; a second support member 71 that includes an extended part along a surface in the film deposition side of the substrate S and supports a surface in the film deposition side of the substrate S; and a revolution elevation mechanism 70 for revolving the extended part of the second support member 71 about a shaft member 72 that is along a vertical direction to the surface in the film deposition side of the substrate S.SELECTED DRAWING: Figure 4
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Description

[Technical field]

[0001] The present invention relates to a film forming apparatus, a method for driving the film forming apparatus, and a film forming method. [Background technology]

[0002] 2. Description of the Related Art Conventionally, in a film formation apparatus, a technique is known in which a chucking member is provided for chucking a surface of a substrate opposite to a surface on which a film is formed. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2019-99910 A Summary of the Invention [Problem to be solved by the invention]

[0004] In recent years, substrates have become larger in size, and if the substrate is significantly warped before being attracted to the attraction member, it may be difficult to attract the substrate to the attraction member appropriately. [Means for solving the problem]

[0005] The film forming apparatus of the present invention comprises: an adsorption member for adsorbing a surface of the substrate opposite to a surface on which a film is to be formed; a first support member that supports a peripheral edge of the substrate at least either before or after the substrate is attracted to the attraction member; a second support member including a portion extending along the film-forming surface of the substrate and supporting the film-forming surface of the substrate; a drive unit that rotates the extended portion of the second support member about an axis that is perpendicular to a surface of the substrate on the film formation side; The present invention is characterized by comprising Effect of the Invention

[0006] As described above, according to the present invention, the substrate can be suction-attached to the suction member in a stable state. [Brief description of the drawings]

[0007] [Figure 1] FIG. [Diagram 2] FIG. 2 is an explanatory diagram of the operation of a main part of the film forming apparatus. [Diagram 3] FIG. 2 is an explanatory diagram of the operation of a main part of the film forming apparatus. [Figure 4] FIG. 2 is an explanatory diagram of the operation of a main part of the film forming apparatus. [Diagram 5] FIG. 2 is an explanatory diagram of the operation of a main part of the film forming apparatus. [Figure 6] FIG. 2 is an explanatory diagram of the operation of a main part of the film forming apparatus. [Figure 7] FIG. 2 is an explanatory diagram of the operation of a main part of the film forming apparatus. [Figure 8] FIG. 2 is an explanatory diagram of the operation of a main part of the film forming apparatus. [Figure 9] FIG. 1 is an explanatory diagram of an organic EL display device. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, the embodiment of the present invention will be described in detail with reference to the drawings. However, the dimensions, materials, shapes, relative positions, and the like of the components described in the embodiment are not intended to limit the scope of the present invention unless otherwise specified.

[0009] (Example) A film forming apparatus according to an embodiment of the present invention will be described with reference to Figures 1 to 8. In Figures 1 to 4 and 6 to 8, members that operate together are hatched in the same manner to make the operation of each member easier to understand. Although each member is shown in cross section in these figures, the fact that it is hatched does not necessarily mean that the cross section is shown, since each member may be located at different positions on the front and back sides of the paper.

[0010] <Configuration of film formation equipment> In particular, the overall configuration of the film formation apparatus 1 will be described with reference to Fig. 1. Fig. 1 is a schematic diagram of the entire film formation apparatus. The film formation apparatus 1 includes a chamber 10 and a film formation source 20 provided in the chamber 10. The inside of the chamber 10 is configured so that a vacuum atmosphere or an inert gas atmosphere can be maintained. As the film formation source 20, in addition to an evaporation source that evaporates or sublimes a film formation material, a sputtering cathode for forming a film by sputtering, etc. can be used.

[0011] The upper part of the chamber 10 is provided with various mechanisms for aligning the substrate S on which a film is to be formed and the mask M arranged on the film-forming side of the substrate S in order to form a thin film of a desired pattern on the substrate S. In this embodiment, the chamber 10 in which the film-forming source 20 is arranged is provided with these various mechanisms, but a configuration in which a chamber for aligning the substrate S and the mask M and a chamber equipped with the film-forming source are separately provided may also be adopted. In this case, after the substrate S and the mask M are aligned in the alignment chamber, the substrate S and the mask M are transported to the chamber equipped with the film-forming source and film formation is performed thereon.

[0012] The following describes various mechanisms for aligning the substrate S and the mask M. A base member 11 and a support plate 12 for supporting various mechanisms are fixed to the ceiling of the chamber .

[0013] A first lifting mechanism 30 is attached to the base member 11 to vertically raise and lower an electrostatic chuck 31 as an adsorption member. The first lifting mechanism 30 includes a holding member 32 for holding the electrostatic chuck 31, a shaft member 33 for raising and lowering the holding member 32, and a drive source 34 for raising and lowering the shaft member 33. The holding member 32 includes a lifting plate 32a perpendicular to the vertical direction. The specific configuration of the lifting mechanism may be implemented by various known techniques such as a ball screw mechanism, and detailed description thereof will be omitted. The electrostatic chuck 31 has an electrode 31a therein, and is configured to generate an electrostatic adsorption force by applying a voltage to the electrode 31a. Note that various known methods such as a Coulomb force type, a Johnson-Rahbek force type, and a gradient force type may be adopted as a method for generating an electrostatic adsorption force. The electrostatic chuck 31 adsorbs the surface of the substrate S opposite to the surface on which the film is formed, and holds the substrate S.

[0014] The lift plate 32a of the holding member 32 in the first lift mechanism 30 is provided with a second lift mechanism (lift unit) 40 for vertically lifting the substrate S. The second lift mechanism 40 includes a first support member 41 for supporting the periphery of the surface of the substrate S on the film-forming side, a shaft member 42 for lifting the first support member 41, and a drive source 43 for lifting the shaft member 42. The specific configuration of the lift mechanism may employ various known techniques such as a ball screw mechanism, and therefore detailed description thereof will be omitted. When the lift plate 32a is lifted by the first lift mechanism 30 without operating the second lift mechanism 40, the electrostatic chuck 31 and the substrate S are lifted together. On the other hand, the substrate S can be lifted relative to the electrostatic chuck 31 by operating the second lift mechanism 40.

[0015] The film forming apparatus 1 also includes a mask adjustment mechanism 50 as a mask driving unit that adjusts the position of the mask M. The mask adjustment mechanism 50 includes a support part 51 fixed to the ceiling part of the chamber 10, a mask table receiving part 52 provided at the lower end of the support part 51, and a magnetic field generating coil box 53 fixed to the support part 51. A magnet 55 is provided on the periphery of a mask table 54 as a mask holding part that holds the mask M. The mask table 54 is arranged so that the magnet 55 is disposed in the gap between the mask table receiving part 52 and the magnetic field generating coil box 53. The magnetic field generated by the magnetic field generating coil box 53 is controlled to adjust the horizontal position of the mask table 54 while it is floating by magnetic levitation. That is, if the directions perpendicular to the vertical direction and perpendicular to each other are defined as the X and Y directions, and the direction rotating around the vertical direction is defined as the θ direction, the position of the mask table 54 can be adjusted in the X, Y, and θ directions by controlling the magnetic field generated by the magnetic field generating coil box 53.

[0016] The mask adjustment mechanism 50 also has a third lifting mechanism for lifting and lowering the mask M. This third lifting mechanism is attached to the support plate 12 fixed to the ceiling of the chamber 10, and includes a support member 56 for supporting the mask M, a shaft member 57 for lifting and lowering the support member 56, and a drive source 58 for lifting and lowering the shaft member 57. Since various known techniques such as a ball screw mechanism can be adopted for the specific configuration of the lifting mechanism, detailed description thereof will be omitted. This mask lifting mechanism is used to receive the mask M transported into the chamber 10 and place the mask M on the mask table 54. FIG. 1 shows a state in which the mask M is placed on the mask table 54.

[0017] Further, a fourth lifting mechanism 60 is attached to the base member 11, which vertically lifts and lowers a magnetic attraction member 61 that magnetically attracts the mask M via the substrate S and electrostatic chuck 31 after the substrate S and mask M have been aligned with each other. The fourth lifting mechanism 60 includes a holding member 62 that holds the magnetic attraction member 61, and a drive source 63 that lifts and lowers the holding member 62. As the specific configuration of the lifting mechanism may employ various known techniques such as a ball screw mechanism, a detailed description thereof will be omitted.

[0018] Furthermore, in this embodiment, a swivel lift mechanism 70 is provided as a drive unit that can rotate the second support member 71 that supports a position on the inner side of the peripheral edge of the surface of the substrate S on the film-forming side and lift the second support member 71. The swivel lift mechanism 70 is attached to a support plate 12 fixed to the ceiling of the chamber 10. The swivel lift mechanism 70 includes the second support member 71, a shaft member 72 for rotating and lifting the second support member 71, and a drive source 73 for rotating and lifting the shaft member 72. Note that the specific configuration of the swivel lift mechanism may employ various known techniques, such as a combination of a known rotation mechanism using a motor or the like and a lift mechanism using a ball screw mechanism, and therefore a detailed description thereof will be omitted. The second support member 71 according to this embodiment includes a portion (a portion extending in the horizontal direction) that extends from the tip of the shaft member 72 along the surface of the substrate S on the film-forming side, and a portion that extends in the vertical direction from the tip. The tip of this vertically extending portion comes into contact with the substrate S, thereby supporting the surface of the substrate S on the film-forming side. The shaft member 72 is configured to extend along a direction perpendicular to the surface of the substrate S on the film-forming side. The swivel-lift mechanism 70 rotates the "portion of the second support member 71 extending along the surface of the substrate S on the film-forming side" around the shaft member 72. The contact portion with the substrate S is preferably a portion on which no film is formed, such as a boundary portion between film-forming regions. The shape of the second support member 71 is not necessarily limited to this shape. In this embodiment, the second support member 71 is provided in two locations, but the number of second support members 71 is not limited.

[0019] The film forming apparatus 1 also includes a control device 90 for controlling the operation of the film forming source 20 and the various mechanisms described above. The control device for controlling the various devices is a known technique, and therefore a detailed description will be omitted. The control device 90 includes a processor such as a CPU, a semiconductor memory, a hard disk, etc. It is equipped with storage devices such as disks and input / output interfaces.

[0020] <Operations up to alignment of substrate and mask in film formation device> In particular, the operation up to the alignment of the substrate and the mask in the film forming apparatus 1 (a method of driving the film forming apparatus) will be described with reference to Figures 2 to 8. Figures 2 to 4 and Figures 6 to 8 show a portion of Figure 1 in which various mechanisms are provided near the ceiling of the chamber 10. Figure 5 shows the positional relationship of the substrate S, the first support member 41, and the swiveling lifting mechanism 70 as viewed from above in the order of operation.

[0021] First, the mask M is transported into the chamber 10, and the mask M is placed on the mask stage 54 by the third lifting mechanism. Then, the substrate S is transported into the chamber 10 by the hand unit 80 of the transport robot, and the substrate S is placed on the first support member 41 of the second lifting mechanism 40 (see FIG. 5(a)). As a result, the first support member 41 supports the periphery of the surface of the substrate S on the film formation side (see FIGS. 2 and 5(b)). This is the supporting step. At this time, the substrate S is in a state where the center of the substrate S is bent downward in the vertical direction due to its own weight. During this series of operations, the second support member 71 is moved by the swivel lifting mechanism 70 to a position where it does not interfere with the lifting operation of the substrate S (see FIGS. 2 and 5(a)(b)).

[0022] After the supporting step, the second supporting member 71 is moved to a position where the movement of the substrate S supported by the first supporting member 41 is not hindered, and an approaching step is performed in which the substrate S supported by the first supporting member 41 is brought closer to the electrostatic chuck 31. In this embodiment, the substrate S supported by the first supporting member 41 is raised by the second lifting mechanism 40, and the periphery of the substrate S is brought into contact with the electrostatic chuck 31. After this approaching step, a turning step is performed in which the second supporting member 71 is moved to a position where the substrate S is supported by turning a "portion extending along the surface of the film-forming side of the substrate S" in the second supporting member 71 around an axis member 72 that is aligned in a direction perpendicular to the surface of the film-forming side of the substrate S. That is, the second supporting member 71 is turned by the turning and lifting mechanism 70, and the portion supporting the substrate S is moved directly under the center of the substrate S (a position inside the periphery) (see FIG. 3). Thereafter, the second support member 71 is raised by the swiveling and lifting mechanism 70 so that it is in contact with the center of the substrate S (see Figures 4 and 5(c)). That is, the portion of the second support member 71 that supports the substrate S supports the substrate S at a position on the film-forming side of the surface of the substrate S that is more inward than the periphery. In this manner, the swiveling process further includes a process of raising and lowering the second support member 71. As a result, the center of the substrate S is lifted by the second support member 71, so that bending of the substrate S is suppressed. Note that "a position on the film-forming side of the surface of the substrate S that is more inward than the periphery" is not limited to the center of gravity (center) of the substrate S, but means the position of the center of the substrate (area excluding the periphery).

[0023] Then, after the rotation step, an adsorption step is performed in which the substrate S is adsorbed by the electrostatic chuck 31. That is, in a state in which the bending of the substrate S is suppressed, a voltage is applied to the electrode 31a provided on the electrostatic chuck 31, and the substrate S is adsorbed to the electrostatic chuck 31 by electrostatic adsorption force. In this manner, the first support member 41 supports the periphery of the substrate S at least before and after the substrate S is adsorbed to the electrostatic chuck 31 as an adsorption member. In addition, the second support member 71 supports a position on the inner side of the periphery of the surface of the film formation side of the substrate S before the substrate S is adsorbed to the electrostatic chuck 31. Then, after the substrate S is adsorbed to the electrostatic chuck 31, an alignment operation is performed to align the substrate S with the mask M.

[0024] Regarding the alignment operation for aligning the substrate S and the mask M, various known methods can be adopted, but here, a representative example will be described. Generally, in order to perform the alignment, alignment marks (not shown) are provided on the substrate S and the mask M, respectively. The marks on both sides are photographed by a camera C fixed to the chamber 10, and the amount of misalignment between them is determined. Then, the horizontal position of at least one of the substrate S and the mask M is adjusted so that the misalignment is eliminated (usually, the amount of misalignment falls within a threshold value). In order to achieve highly accurate alignment in a short time, it is common to perform rough alignment, which roughly aligns the positions, and fine alignment, which highly accurately aligns the positions. In the rough alignment, a camera C with a low resolution but a wide field of view is used, and in the fine alignment, a camera C with a narrow field of view but a high resolution is used. In addition, for the above alignment marks, separate marks are usually used for rough alignment and fine alignment.

[0025] Specifically, after the substrate S is attracted to the electrostatic chuck 31, the electrostatic chuck 31 and the substrate S are lowered together by the first lifting mechanism 30, so that the substrate S and the mask M come into contact with each other (see FIG. 6). In this state, the control device 90 determines the amount of misalignment between the substrate S and the mask M based on the photographing information obtained from the camera C. Thereafter, the electrostatic chuck 31 and the substrate S are raised together by the first lifting mechanism 30, so that the substrate S is slightly separated from the mask M (see FIG. 7). In this state, rough alignment is performed. That is, in this embodiment, the mask adjustment mechanism 50 adjusts the mask stage 54 in the horizontal direction (X, Y, and θ directions) based on the amount of misalignment, thereby performing rough alignment between the substrate S and the mask M.

[0026] After the rough alignment is performed, the electrostatic chuck 31 and the substrate S are lowered together again by the first lifting mechanism 30, so that the substrate S is in contact with the mask M. Then, fine alignment is performed in the same order as the rough alignment. In general, fine alignment is repeated until the amount of misalignment between the substrate S and the mask M falls within a threshold range. Here, the case has been described in which the substrate S and the mask M are in contact with each other, the amount of misalignment between them is determined, and then the substrate S and the mask M are separated to perform rough alignment and fine alignment. However, the electrostatic chuck 31 and the substrate S can be lowered together by the first lifting mechanism 30, so that the substrate S and the mask M are slightly separated from each other, the amount of misalignment between them is determined, and the rough alignment and fine alignment can be performed in that state.

[0027] After the fine alignment is completed, the magnetic attraction member 61 is lowered by the fourth lifting mechanism 60. As a result, the mask M is attracted to the magnetic attraction member 61 via the substrate S and the electrostatic chuck 31. As a result, the substrate S and the mask M are fixed in contact with each other (see FIG. 8). Thereafter, the film-forming source 20 forms a thin film of the desired pattern (openings) formed on the mask M on the surface (film-forming surface) of the substrate S. In this manner, a film-forming process is performed in which a film is formed after the attraction process. Note that after the attraction process and before the film-forming process is started, a retreat process is performed in which the second support member 71 is moved to a retreat position by rotating the "portion extending along the surface of the film-forming side of the substrate S" of the second support member 71 around the shaft member 72.

[0028] <Electronic device manufacturing method> Next, a description will be given of an example of a method for manufacturing an electronic device using the film forming apparatus of this embodiment. Below, the configuration of an organic EL display device will be shown as an example of an electronic device, and a method for manufacturing the organic EL display device will be illustrated.

[0029] First, the organic EL display device to be manufactured will be described. Fig. 9(a) is an overall view of an organic EL display device 150, and Fig. 9(b) shows the cross-sectional structure of one pixel.

[0030] As shown in FIG. 9(a), a plurality of pixels 152, each of which includes a plurality of light-emitting elements, are arranged in a matrix in a display region 151 of an organic EL display device 150. Each of the optical elements has a structure including an organic layer sandwiched between a pair of electrodes. The pixel here refers to the smallest unit that allows a desired color to be displayed in the display area 151. In the case of the organic EL display device according to this embodiment, the pixel 152 is configured by a combination of a first light emitting element 152R, a second light emitting element 152G, and a third light emitting element 152B that emit light different from each other. The pixel 152 is often configured by a combination of a red light emitting element, a green light emitting element, and a blue light emitting element, but may also be a combination of a yellow light emitting element, a cyan light emitting element, and a white light emitting element, and is not particularly limited as long as it is at least one color.

[0031] Fig. 9(b) is a schematic partial cross-sectional view taken along line AB in Fig. 9(a). The pixel 152 is made up of a plurality of light-emitting elements, and each light-emitting element has a first electrode (anode) 154, a hole transport layer 155, one of the light-emitting layers 156R, 156G, and 156B, an electron transport layer 157, and a second electrode (cathode) 158 on a substrate 153. Among these, the hole transport layer 155, the light-emitting layers 156R, 156G, and 156B, and the electron transport layer 157 correspond to organic layers. In this embodiment, the light-emitting layer 156R is an organic EL layer that emits red light, the light-emitting layer 156G is an organic EL layer that emits green light, and the light-emitting layer 156B is an organic EL layer that emits blue light. The light-emitting layers 156R, 156G, and 156B are formed in patterns corresponding to the light-emitting elements (sometimes referred to as organic EL elements) that emit red, green, and blue light, respectively. In addition, the first electrode 154 is formed separately for each light-emitting element. The hole transport layer 155, the electron transport layer 157, and the second electrode 158 may be formed in common for the plurality of light-emitting elements 152R, 152G, and 152B, or may be formed for each light-emitting element. In order to prevent the first electrode 154 and the second electrode 158 from being shorted by foreign matter, an insulating layer 159 is provided between the first electrodes 154. Furthermore, since the organic EL layer deteriorates due to moisture and oxygen, a protective layer 140 is provided to protect the organic EL element from moisture and oxygen.

[0032] 9(b), the hole transport layer 155 and the electron transport layer 157 are shown as single layers, but depending on the structure of the organic EL display element, they may be formed of multiple layers including a hole blocking layer and an electron blocking layer. In addition, a hole injection layer having an energy band structure that can smoothly inject holes from the first electrode 154 to the hole transport layer 155 can be formed between the first electrode 154 and the hole transport layer 155. Similarly, an electron injection layer can be formed between the second electrode 158 and the electron transport layer 157.

[0033] Next, an example of a method for manufacturing an organic EL display device will be specifically described.

[0034] First, a substrate 153 on which a circuit (not shown) for driving the organic EL display device and a first electrode 154 are formed is prepared.

[0035] An acrylic resin is formed by spin coating on the substrate 153 on which the first electrode 154 is formed, and the acrylic resin is patterned by lithography so as to form an opening in the portion where the first electrode 154 is formed, thereby forming an insulating layer 159. This opening corresponds to the light-emitting region where the light-emitting element actually emits light.

[0036] The substrate 153 with the patterned insulating layer 159 is carried into a first organic material film forming apparatus, and the substrate is held by a substrate support table and an electrostatic chuck, and a hole transport layer 155 is formed as a common layer on the first electrode 154 in the display region. The hole transport layer 155 is formed by vacuum deposition. In practice, the hole transport layer 155 is formed to be larger than the display region 151, so no high-resolution mask is required.

[0037] Next, the substrate 153 on which the hole transport layer 155 has been formed is carried into a second organic material deposition apparatus and held by a substrate support table and an electrostatic chuck. The substrate and the mask are aligned, the substrate is placed on the mask, and a red-emitting element is placed on the portion of the substrate 153 where the red-emitting element is to be disposed. Then, a light emitting layer 156R is formed.

[0038] Similar to the formation of the light-emitting layer 156R, a third organic material film formation apparatus is used to form a green light-emitting layer 156G, and a fourth organic material film formation apparatus is used to form a blue light-emitting layer 156B. After the formation of the light-emitting layers 156R, 156G, and 156B is completed, a fifth film formation apparatus is used to form an electron transport layer 157 over the entire display area 151. The electron transport layer 157 is formed as a layer common to the three light-emitting layers 156R, 156G, and 156B.

[0039] The substrate on which the electron transport layer 157 has been formed is moved in a metallic evaporation material deposition apparatus, and a second electrode 158 is deposited.

[0040] Thereafter, the substrate is transferred to a plasma CVD apparatus, where a protective layer 140 is formed, and the organic EL display device 150 is completed.

[0041] If the substrate 153 on which the insulating layer 159 is patterned is exposed to an atmosphere containing moisture or oxygen from the time when it is carried into the film forming apparatus until the film formation of the protective layer 140 is completed, the light emitting layer made of an organic EL material may be deteriorated by moisture or oxygen. Therefore, in this embodiment, the substrate is carried in and out of the film forming apparatus in a vacuum atmosphere or an inert gas atmosphere.

[0042] <Advantages of the film forming apparatus according to this embodiment> According to the film forming apparatus 1 of this embodiment, by providing the second support member 71, it is possible to suppress bending of the substrate S before the substrate S is attracted to the electrostatic chuck 31. This makes it possible to attract the substrate S to the electrostatic chuck 31 in a stable state. In other words, it is possible to suppress the substrate S from being attracted to the electrostatic chuck 31 in a wavy or partially deformed state. [Explanation of symbols]

[0043] 1: Film forming apparatus 10: Chamber 11: Base member 12: Support plate 20: Film forming source 30: First lifting mechanism 31: Electrostatic chuck 31a: Electrode 32: Holding member 32a: Lifting plate 33: Shaft member 34: Driving source 40: Second lifting mechanism 41: First support member 42: Shaft member 43: Driving source 50: Mask adjustment mechanism 51: Support section 52: Mask table receiving section 53: Magnetic field generating coil box 54: Mask table 55: Magnet 56: Support member 57: Shaft member 58: Driving source 60: Fourth lifting mechanism 61: Magnetic attraction member 62: Holding member 63: Driving source 70: Swivel lifting mechanism 71: Second support member 72: Shaft member 73: Driving source 80: Hand section 90: Control device C: Camera M: Mask S: Substrate

Claims

1. an adsorption member for adsorbing a surface of the substrate opposite to the surface on which the film is formed; a first support member that supports a peripheral edge of the substrate at least either before or after the substrate is attracted to the attraction member; a second support member including a portion extending along the film-forming surface of the substrate and supporting the film-forming surface of the substrate; a drive unit that moves the second support member from a position that supports the substrate to a position that does not interfere with movement of the substrate supported by the first support member; A film forming apparatus comprising:

2. The film forming apparatus described in Claim 1, characterized in that the driving unit moves the second support member from a position supporting the substrate to a position that does not interfere with the movement of the substrate supported by the first support member by rotating the extended portion of the second support member around an axis that is perpendicular to the film forming side surface of the substrate.

3. The film forming apparatus according to claim 1 , wherein the driving unit raises and lowers the second support member.

4. a lifting unit that lifts and lowers the first support member, 2. The film forming apparatus according to claim 1, wherein the driving unit moves the second support member to a position that does not interfere with the movement of the substrate when the lifting unit raises or lowers the first support member, and moves the second support member to a position that supports the substrate before the suction member adsorbs the substrate.

5. 2. The film forming apparatus according to claim 1, wherein the attraction member has an electrode therein, and is configured to generate an electrostatic attraction force when a voltage is applied to the electrode.

6. a mask holder that holds a mask; a mask driving unit that moves the mask holding unit in a levitated state by magnetic levitation, 2. The film forming apparatus according to claim 1, wherein the mask driving unit moves the mask holding unit while the suction member is holding the substrate by suction, thereby aligning the substrate and the mask.

7. 7. The film forming apparatus according to claim 1, further comprising a film forming source for forming a thin film on the substrate attracted by the attracting member.

8. an adsorption member for adsorbing a surface of the substrate opposite to the surface on which the film is formed; a first support member that supports a peripheral edge of the substrate; a second support member including a portion extending along the film-forming surface of the substrate and supporting the film-forming surface of the substrate; A method for driving a film forming apparatus comprising: a supporting step in which the first support member supports a peripheral edge of the substrate; an approaching step of moving the substrate supported by the first support member closer to the suction member in a state in which the second support member is moved to a position where the second support member does not interfere with the movement of the substrate supported by the first support member after the supporting step; a pivoting step of pivoting the extended portion of the second support member around an axis along a direction perpendicular to a surface of the substrate on the film formation side after the approaching step, thereby moving the second support member to a position where the second support member supports the substrate; a suction step of suctioning the substrate by the suction member after the rotating step; a film formation step of forming a film after the adsorption step. A method for driving a film forming apparatus.

9. 9. The method for driving a film deposition apparatus according to claim 8, wherein the rotating step further includes the step of lifting and lowering the second support member.

10. 9. The method for driving a film forming apparatus according to claim 8, further comprising a retraction step of moving the second support member to a retracted position by rotating the extended portion of the second support member around the axis after the adsorption step and before starting the film forming step.

11. A film deposition method, comprising depositing a film on a substrate by using the method for driving a film deposition apparatus according to any one of claims 8 to 10.