Peripheral exposure device and peripheral exposure method

Abstract

To reduce the possibility of sublimate deposition on a subsequently processed substrate.SOLUTION: A peripheral exposure device according to an embodiment of the present disclosure includes a substrate holding portion which holds and rotates a substrate, an exposure portion which irradiates exposure light onto a peripheral region on a surface of a substrate held by the substrate holding portion, and an exhaust portion which exhausts from an exhaust range which includes a location on the outside of the peripheral region of the substrate held by the substrate holding portion which corresponds to a position irradiated by the exposure portion and is set to extend along the peripheral region.SELECTED DRAWING: Figure 7

Description

[Technical field]

[0001] The present disclosure relates to an edge exposure apparatus and an edge exposure method. [Background technology]

[0002] Patent Document 1 discloses a substrate processing apparatus that performs predetermined substrate processing including at least one of a peripheral exposure process for exposing the peripheral portion of a substrate and a substrate inspection process for inspecting the substrate. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2012-222086 A Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides an edge exposure apparatus and method useful for reducing the likelihood of sublimate deposition on a substrate being subsequently processed. [Means for solving the problem]

[0005] A peripheral exposure device according to one aspect of the present disclosure comprises a substrate holding section which holds and rotates a substrate, an exposure section which irradiates exposure light onto a peripheral region on a surface of the substrate held by the substrate holding section, and an exhaust section which exhausts from an exhaust range which includes a location on the outside of the peripheral region of the substrate held by the substrate holding section which corresponds to a position irradiated by the exposure section and is set to extend along the peripheral region. Effect of the Invention

[0006] The present disclosure provides an edge exposure apparatus and edge exposure method that are useful for reducing the likelihood of sublimate adhesion to a substrate to be subsequently processed. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is a plan view illustrating an example of a substrate processing apparatus. [Diagram 2] FIG. 2 is a side view diagrammatically illustrating an example of the substrate processing apparatus. [Diagram 3] FIG. 3 is a side view that illustrates a schematic diagram of an example of a peripheral exposure apparatus. [Figure 4] FIG. 4 is a plan view showing a schematic example of a peripheral exposure apparatus. [Diagram 5] 5(a) and 5(b) are schematic diagrams showing an example of an exposure section in a peripheral exposure device. [Figure 6] FIG. 6 is a schematic diagram showing an example of a lower exhaust section of a peripheral exposure apparatus. [Figure 7] 7(a) and 7(b) are schematic diagrams showing an example of a peripheral exhaust section of a peripheral exposure apparatus. [Figure 8] 8(a) and 8(b) are schematic diagrams showing an example of a recovery member of the outer circumferential exhaust section. [Figure 9] 9(a) and 9(b) are schematic diagrams showing an example of a gas discharge section of a peripheral exposure device. [Figure 10] FIG. 10 is a block diagram illustrating an example of the hardware configuration of the control unit of the peripheral exposure apparatus. [Figure 11] FIG. 11 is a flowchart showing an example of the edge exposure method. [Figure 12] FIG. 12 is a schematic diagram showing an example of a peripheral exhaust section of a peripheral exposure apparatus. [Figure 13] FIG. 13 is a diagram showing an example of a substrate on which a notch is formed. [Figure 14] 14(a) and 14(b) are schematic diagrams showing an example of a peripheral exhaust section of a peripheral exposure apparatus. [Figure 15] FIG. 15 is a schematic diagram showing an example of a peripheral exhaust section of a peripheral exposure apparatus. [Figure 16] FIG. 16 is a schematic diagram showing an example of a recovery member of the outer circumferential exhaust section. [Figure 17] FIG. 17 is a schematic diagram showing an example of a connection structure between the recovery member and the suction member. [Figure 18] FIG. 18 is a schematic diagram showing an example of distribution of the discharge flow rate of gas discharged by the gas discharge portion. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, a wafer processing system as a substrate processing apparatus according to the present embodiment will be described with reference to the drawings. In this specification, elements having substantially the same functional configurations are denoted by the same reference numerals to avoid repetitive description. Some drawings show an orthogonal coordinate system defined by an X-axis, a Y-axis, and a Z-axis. In the following embodiment, the Z-axis corresponds to the vertical direction, and the X-axis and the Y-axis correspond to the horizontal direction.

[0009] <Wafer processing system> First, the configuration of the wafer processing system according to this embodiment will be described. Figures 1 and 2 are a plan view and a front view, respectively, that show a schematic outline of the configuration of the wafer processing system 1. In this embodiment, the wafer processing system 1 will be described as an example of a photolithography processing system that performs a resist film forming process and a developing process on a wafer W (substrate).

[0010] 1, the wafer processing system 1 has a cassette station 2 where a cassette C containing a plurality of wafers W is loaded and unloaded, and a processing station 3 equipped with a plurality of various processing devices that perform predetermined processing on the wafers W. The wafer processing system 1 has a configuration in which the cassette station 2 and an interface station 4 that transfers the wafers W between the processing station 3 and an exposure device (not shown) adjacent to the opposite side of the processing station 3 are integrally connected. Note that, although two processing stations 3 are installed between the cassette station 2 and the interface station 4 as shown in FIG. 1, one processing station 3 or three or more processing stations may be installed.

[0011] The cassette station 2 is provided with a plurality of cassette mounting stages 21 and wafer transport devices 22 and 23. The cassette station 2 transports the wafers W between the cassettes C mounted on the mounting stages 12 and the processing station 3 by the wafer transport devices 22 or 23. To this end, the wafer transport devices 22 and 23 are each provided with drive mechanisms for directions such as the X direction, Y direction, up and down direction, and around the vertical axis (θ direction) as necessary, and may be provided with drive mechanisms for all directions. At least one of the wafer transport devices 22 and 23 is capable of transferring the wafer W between the cassette C and the processing station 3, and is also capable of transferring the wafer W to and from the processing station 3. Note that the transfer operation of the wafer W to and from the processing station 3 means, for example, transferring the wafer W to and from a third block G3 including a transfer device accessible to a wafer transport device 33 in the processing station 3 described below. The third block G3 may include a plurality of transfer devices (not shown) arranged vertically.

[0012] An inspection device (not shown) for inspecting the wafer W may be provided at a position accessible to either of the wafer transport devices 22 and 23.

[0013] The processing station 3 is provided with a plurality of blocks, for example, three blocks G1, G2, and G4, namely, the first, second, and fourth blocks. Also, as shown in FIG. 2, a plurality of layers 31 each including the first and second blocks G1 and G2 are stacked vertically. For example, the first block G1 is provided on the front side (negative side in the X direction in FIG. 1) of the processing station 3, and the second block G2 is provided on the rear side (positive side in the X direction in FIG. 1) of the processing station 3. A fourth block G4 is provided on the interface station 5 side (positive side in the Y direction in FIG. 1) of the processing station 3 or at a connection portion with another adjacent processing station 3. The fourth block G4 may be provided with a plurality of transfer devices arranged vertically. Also, the above-mentioned third block G3 may be provided within the processing station 3.

[0014] In the first block G1, a plurality of processing devices, such as a patterning film forming device and a development processing device (both not shown), are arranged. The patterning film forming device may include, for example, a resist film forming device and an anti-reflection film forming device.

[0015] For example, a plurality of processing devices are arranged in a horizontal direction. The number, arrangement, and type of these processing devices can be selected arbitrarily.

[0016] In these patterning film forming apparatuses and developing treatment apparatuses, for example, a predetermined processing liquid or a predetermined gas is supplied onto the wafer W. In this manner, in the patterning film forming apparatuses, a resist film used as a mask when forming a pattern of a lower layer film, or an anti-reflection film for efficiently performing a light irradiation process, for example an exposure process, is formed. Meanwhile, in the developing treatment apparatuses, a part of the exposed resist film is removed to form an uneven shape as the mask.

[0017] For example, in the second block G2, heat treatment devices (not shown) for performing heat treatment such as heating and cooling of the wafer W are arranged vertically and horizontally. Also, in the second block G2, a hydrophobization treatment device (not shown) for performing a hydrophobization treatment to improve the fixation of the resist liquid to the wafer W, and a peripheral exposure device 50 for exposing the peripheral portion of the wafer W are arranged vertically (Z direction in FIG. 2) and horizontally. The number and arrangement of these heat treatment devices, hydrophobization treatment devices, and peripheral exposure devices 50 can also be selected arbitrarily.

[0018] 1, a wafer transfer area 32 is formed in an area sandwiched between a first block G1 and a second block G2 in a plan view. In the wafer transfer area 32, for example, a wafer transfer device 33 is disposed.

[0019] The wafer transport device 33 has a transport arm that is movable in, for example, the Y direction, the front-rear direction, the θ direction, and the up-down direction. The transport arm of the wafer transport device 33 moves within the wafer transport area 32 and can transport the wafer W to a predetermined device within the surrounding first block G1, second block G2, third block G3, and fourth block G4. When there are multiple processing stations 3 as shown in FIG. 1, the wafer transport device 33 provided in the processing station 3 located on the interface station 5 side can transport the wafer W to a predetermined device within the fifth block G5 described below in addition to the first, second, and fourth blocks G1, G2, and G4.

[0020] A plurality of wafer transport devices 33 are arranged vertically, for example, as shown in FIG. 2. One wafer transport device 33 can transport a wafer W to a predetermined device located at the height of the upper layers 31 among the layers 31 stacked vertically. Another wafer transport device 33 can transport a wafer W to a predetermined device located at the height of the layers 31 located below the layers 31. A plurality of wafer transport areas 32 are provided to enable such transport of a wafer W. The number of wafer transport devices 33 and the number of layers 31 corresponding to one wafer transport device 33 can be selected arbitrarily, such as providing a wafer transport device 33 for each layer 31.

[0021] Furthermore, the wafer transfer area 32, the first block G1, or the second block G2 may include a shuttle transfer device (not shown). The shuttle transfer device linearly transfers the wafer W between a space adjacent to one side of the processing station 3 and another space adjacent to the opposite side.

[0022] The interface station 4 includes a fifth block G5 equipped with a plurality of transfer devices, and wafer transfer devices 41 and 42. The interface station 4 transfers the wafer W between the fifth block G5, where the wafer W is transferred by the wafer transfer device 33, and the exposure device using the wafer transfer device 41 or 42. To this end, the wafer transfer devices 41 and 42 each include a drive mechanism for the X direction, Y direction, up and down direction, and around the vertical axis (θ direction) as necessary, and may include a drive mechanism for all directions. At least one of the wafer transfer devices 41 and 42 can support the wafer W and transfer the wafer W between the transfer device in the fifth block G5 and the exposure device.

[0023] A cleaning device for cleaning the surface of the wafer W and the above-mentioned peripheral exposure device 50 may be provided in the interface station 4 at a position accessible to either of the wafer transfer devices 41 and 42 .

[0024] The inspection device may be provided in the cassette station 2 as described above, but may also be provided in the processing station 3 and the interface station 4 at a position accessible by any of the transfer arms (33, 41, 42 in FIG. 1 or FIG. 2) provided therein. The peripheral exposure device 50 may have a function of inspecting the wafer W in addition to the exposure function.

[0025] The above-described wafer processing system 1 is provided with a control device 100. The control device 100 is, for example, a computer, and has a program storage unit (not shown). The program storage unit stores a program for controlling the processing of the wafer W in the wafer processing system 1. The program storage unit also stores a program for controlling the operation of the drive systems of the above-described various processing devices and transport devices, and for realizing the wafer processing in the wafer processing system 1. The above-described program may be recorded in a computer-readable storage medium H and installed in the control device 100 from the storage medium H.

[0026] <Wafer Processing System Operation> The wafer processing system 1 is configured as described above. Next, an example of wafer processing performed using the wafer processing system 1 configured as described above will be described.

[0027] First, a cassette C storing a plurality of wafers W is carried into the cassette station 2 of the wafer processing system 1 and placed on the cassette mounting table 21. Next, each wafer W in the cassette C is sequentially taken out by the wafer transfer device 22 or 23 and transferred to a delivery device in the third block G3.

[0028] The wafer W transferred to the transfer device of the third block G3 is supported by the wafer transfer device 33 and transferred to the hydrophobization treatment device provided in the second block G2, where the hydrophobization treatment is performed. Next, the wafer W is transferred by the wafer transfer device 33 to the resist film forming device, where a resist film is formed on the wafer W, and then transferred to the heat treatment device, where the wafer W is pre-baked, and then transferred to the transfer device of the fifth block G5. When there are multiple processing stations 3 as shown in FIGS. 1 and 2, the wafer W is placed once in the transfer device of the fourth block G4 before being transferred to the transfer device of the fifth block G5, and then transferred between the multiple wafer transfer devices 33. The wafer W is also transferred by the wafer transfer device 33 to the peripheral exposure device 50, where the peripheral portion of the wafer W is exposed.

[0029] The wafer W transferred to the delivery device in the fifth block G5 is transferred to the exposure device by wafer transfer devices 41 and 42 and is exposed to a predetermined pattern. Note that the wafer W may be cleaned in a cleaning device before the exposure process.

[0030] The wafer W exposed by the exposure machine is transferred to a transfer device in the fifth block G5 by the wafer transfer devices 41 and 42. Thereafter, the wafer W is transferred to a heat treatment device by the wafer transfer device 33 and subjected to post-exposure baking.

[0031] The wafer W that has been subjected to the post-exposure baking process is transferred by the wafer transfer device 33 to a developing treatment device, where it is developed. After the development is completed, the wafer W is transferred by the wafer transfer device 33 to a heat treatment device 40, where it is subjected to a post-baking process.

[0032] Thereafter, the wafer W is transferred by the wafer transfer device 33 to a delivery device in the third block G3, and then transferred by the wafer transfer device 22 or 23 in the cassette station 2 to a cassette C on a predetermined cassette mounting table 21. In this manner, a series of photolithography steps is completed.

[0033] It should be noted that the wafer processing system of the present disclosure is not limited to the configuration and operation described above. For example, in the above embodiment, the wafer W is transferred between the interface station 4 and the exposure machine, but it does not have to be directly connected to the exposure machine. In that case, for example, the wafer W is transferred from the cassette station 2 to the processing station 3, where it is subjected to necessary processing, and then transferred back to the cassette station 2 to be taken out to the outside. Also, among the processing devices listed, those that are not required may not be provided, or processing may not be performed in those devices.

[0034] (Peripheral exposure equipment) Next, an example of the peripheral exposure apparatus 50 included in the wafer processing system 1 will be described with reference to FIGS. 3 to 10. FIG. 3 is a side view including a partial cross section of the peripheral exposure apparatus. FIG. 4 is a plan view including a partial cross section of the peripheral exposure apparatus 50. FIGS. 5(a) and 5(b) are a vertical cross section and a bottom view, respectively, showing an irradiation unit included in the peripheral exposure apparatus 50. FIG. 6 is a plan view showing a lower exhaust section included in the peripheral exposure apparatus 50. FIG. 7(a) is a plan view showing some members included in the peripheral exposure apparatus 50. FIG. 7(b) is a vertical end view of an outer periphery exhaust section included in the peripheral exposure apparatus 50. FIGS. 8(a) and 8(b) are a side view and a perspective view, respectively, showing some members of the external exhaust section. FIGS. 9(a) and 9(b) are side views showing a gas discharge section included in the peripheral exposure apparatus 50. FIG. 10 is a block diagram showing the hardware configuration of a control section included in the peripheral exposure apparatus 50.

[0035] The peripheral exposure device 50 is a device that performs exposure processing on the peripheral region on the surface of the wafer W (hereinafter referred to as "surface Wa"). The peripheral region of the surface Wa is a ring-shaped region consisting of the periphery of the surface Wa and its vicinity. The peripheral exposure device 50 performs exposure processing on the peripheral region on the surface Wa of the wafer W, for example, to remove the peripheral portion of a resist film formed on the surface Wa. As described above, the peripheral exposure device 50 may have a function of inspecting the wafer W in addition to the exposure processing on the peripheral region on the surface Wa of the wafer W on which the resist film is formed.

[0036] The peripheral exposure device 50 has a housing 51, a transport unit 52, an exposure unit 70, and an inspection unit 90. The housing 51 functions as a casing and houses at least some of the components included in the peripheral exposure device 50. The housing 51 may be formed to extend along the X-axis direction. One end of the housing 51 in the X-axis direction is formed with a load / unload opening 51a for loading and unloading the wafer W. The wafer W is loaded into the housing 51 and unloaded from the housing 51 via the load / unload opening 51a.

[0037] The transfer unit 52 holds a wafer W to be processed and transfers the wafer W. The transfer unit 52 has, for example, a wafer holding unit 53 (substrate holding unit), a movement driving unit 55, and a sensor unit 61.

[0038] The wafer holding unit 53 holds and rotates the wafer W. That is, the wafer holding unit 53 rotates the wafer W while holding the wafer W. For example, the wafer holding unit 53 holds the wafer W so that the surface Wa of the wafer W is horizontal, and rotates the wafer W around a vertical axis. In one example, the wafer holding unit 53 includes a mounting table 53a and a rotation drive unit 53b.

[0039] The back surface of the wafer W opposite to the front surface Wa is placed on the mounting table 53a, and the mounting table 53a holds the placed wafer W. The mounting table 53a may be disposed in a lower space (for example, a lower half space) of the internal space formed by the housing 51. The mounting table 53a may hold the wafer W horizontally by suction. The mounting table 53a is rotatably provided and rotated about a vertical axis by the rotation drive unit 53b. The mounting table 53a holds the wafer W such that the axis of rotation by the rotation drive unit 53b and the center CP of the wafer W approximately coincide with each other. As a result, the wafer W held on the mounting table 53a is rotated by the rotation drive unit 53b about a vertical axis passing through the center CP of the wafer W or its vicinity. The rotation drive unit 53b includes a drive source such as an electric motor.

[0040] The movement drive unit 55 moves the wafer holding unit 53 along one horizontal direction. In the example shown in Fig. 3, the movement drive unit 55 moves the wafer holding unit 53 along the X-axis direction. The movement drive unit 55 includes, for example, a ball screw mechanism 56 and a pair of guide rails 57 (see also Fig. 4).

[0041] Ball screw mechanism 56 is provided at the bottom of housing 51, extending from near one end of housing 51 in the X direction to the other end of housing 51 in the X direction. Ball screw mechanism 56 includes a screw shaft 58 and a movement motor 59. Screw shaft 58 is an axial member that engages (screws into) wafer holding part 53 so as to move wafer holding part 53 in the X-axis direction. Movement motor 59 rotates screw shaft 58 about an axis along the extension direction of screw shaft 58.

[0042] The pair of guide rails 57 are arranged to sandwich the ball screw mechanism 56 in a direction (Y-axis direction) perpendicular to the extension direction (X-axis direction) of the ball screw mechanism 56. The guide rails 57 are arranged parallel to the ball screw mechanism 56. The guide rails 57 are provided on the bottom of the housing 51 to extend from near one end of the housing 51 in the X-axis direction to near the other end of the housing 51 in the X-axis direction. The guide rails 57 support the wafer holding part 53 in a movably state.

[0043] The movement motor 59 rotates the screw shaft 58, whereby the wafer holding unit 53 (the mounting table 53a and the rotation drive unit 53b) moves back and forth along the X-axis direction. The movement drive unit 55 may include a cylinder mechanism or a belt mechanism instead of the ball screw mechanism 56. Driven by the movement drive unit 55, the wafer holding unit 53 (the mounting table 53a) can move between a first position P1 near one end of the housing 51 in the X-axis direction and a second position P2 near the other end of the housing 51 in the X-axis direction. The load / unload opening 51a, the first position P1, and the second position P2 of the housing 51 are arranged in this order in the X-axis direction.

[0044] The sensor unit 61 acquires information indicating the rotational position of the wafer W held by the wafer holding unit 53. The sensor unit 61 may have a function of detecting an index portion (e.g., a notch portion) indicating a reference position in the circumferential direction of the wafer W on the mounting table 53a. The sensor unit 61 includes, for example, a light-emitting element 62 and a light-receiving element 63. The light-emitting element 62 and the light-receiving element 63 are installed so as to sandwich the peripheral portion of the wafer W on the mounting table 53a from above and below when the wafer holding unit 53 is disposed at the second position P2. The sensor unit 61 detects the index portion, and the rotation drive unit 53b rotates the mounting table 53a based on the detection result, thereby aligning the rotational position (angle) of the wafer W.

[0045] The exposure unit 70 irradiates the peripheral area of ​​the front surface Wa of the wafer W held by the wafer holding unit 53 with exposure light. For example, while the wafer W is being rotated by the rotation drive unit 53b with the wafer holding unit 53 disposed at the second position P2, the exposure unit 70 irradiates the peripheral area of ​​the front surface Wa of the wafer W with exposure light. In one example, the exposure unit 70 includes a light emitting member 71, a light guiding member 72, and an irradiation member 73.

[0046] The light emitting member 71 includes a light source and generates light for exposing the peripheral region of the surface Wa. The light source included in the light emitting member 71 is, for example, an extra-high pressure mercury lamp. The light emitting member 71 may be disposed outside the housing 51. The light guiding member 72 is a member that connects the light emitting member 71 and the irradiation member 73 and guides the light for exposure generated in the light emitting member 71 to the irradiation member 73. The light guiding member 72 is, for example, an optical fiber.

[0047] The irradiation member 73 irradiates the exposure light guided by the light guide member 72 onto a peripheral region on the front surface Wa of the wafer W. As shown in Figures 5(a) and 5(b), the irradiation member 73 includes, for example, a housing part 83, an entrance slit 77, an entrance lens 78, a mirror 79, an exit lens 80, an exit slit 81, and a shutter 82. The housing part 83 houses the entrance lens 78, the mirror 79, the exit lens 80, and the shutter 82. The entrance slit 77 and the exit slit 81 are each an opening formed in the housing part 83.

[0048] Entrance slit 77 is formed in a rectangular shape, and adjusts the cross-sectional shape of the light beam when the light guided through light guide member 72 is incident on irradiation member 73 (inside housing part 83). The light that has entered the inside of housing part 83 through entrance slit 77 is guided to exit slit 81 via entrance lens 78, mirror 79, and exit lens 80 while its direction and the shape of the light beam are changed.

[0049] The exit slit 81 is formed in the facing portion 83a of the housing part 83. The facing portion 83a faces vertically downward, and at least a part of the facing portion 83a faces a peripheral portion of the front surface Wa of the wafer W held by the wafer holding part 53. The exit slit 81 is formed in a rectangular shape, and adjusts the cross-sectional shape of the light flux when the light that has passed through the exit lens 80 is emitted from the irradiation member 73 (from inside to outside the housing part 83).

[0050] The shutter 82 switches between a state in which light is transmitted from the light guiding member 72 to the inside of the housing 83 and a state in which light is blocked from the light guiding member 72 to the inside of the housing 83. The shutter 82 may have a function of adjusting the opening degree of the entrance slit 77 when transmitting light from the light guiding member 72 to the inside of the housing 83. The open / closed state of the shutter 82, or the open / closed state and the opening degree thereof, are controlled by the control unit 150.

[0051] In the irradiation member 73, the exposure light guided through the light guiding member 72 is emitted from the emission slit 81 and irradiated onto a partial range of the peripheral region of the front surface Wa of the wafer W on which the resist film has been formed. In this state, the wafer W is rotated by the rotary drive unit 53b, whereby the exposure light can be irradiated onto the entire peripheral region of the front surface Wa of the wafer W (i.e., peripheral exposure).

[0052] The irradiation member 73 may include a gas discharge unit 85. The gas discharge unit 85 discharges an inert gas from one or more discharge ports (not shown) arranged around the exit slit 81. The inert gas discharged from the gas discharge unit 85 is, for example, nitrogen gas. The gas discharge unit 85 discharges the inert gas introduced into the inside of the housing unit 83 downward from one or more discharge ports arranged around the exit slit 81. By providing the gas discharge unit 85, it is possible to reduce the amount of sublimate generated from the resist film due to irradiation with the exposure light and adhering to the facing portion 83a.

[0053] 3 and 4, the inspection section 90 acquires information for inspecting the wafer W. The inspection section 90 has an imaging unit 91. The imaging unit 91 is a unit capable of capturing an image of the front surface Wa of the wafer W. The imaging unit 91 is disposed above the wafer W held by the transfer section 52 in the internal space of the housing 51. The imaging unit 91 includes, for example, a camera 92, a half mirror 93, and an illumination module 94.

[0054] The camera 92 is fixed to the side wall of the housing 51 opposite to the side wall where the loading / unloading port 51a is formed in the internal space of the housing 51. The camera 92 is, for example, a CCD camera. The half mirror 93 and the lighting module 94 are disposed near the center of the housing 51 in the X-axis direction. Light emitted from the lighting module 94 passes through the half mirror 93 and proceeds downward from the half mirror 93. Light reflected from an object present below the half mirror 93 is reflected by the half mirror 93 and enters the camera 92. This allows the camera 92 to capture an image of an object illuminated by the lighting module 94 below the half mirror 93.

[0055] In the edge exposure apparatus 50, the imaging unit 91 scans the surface Wa of the wafer W on the mounting table 53a while the wafer holding part 53 moves in the X-axis direction along the guide rail 57. The imaging unit 91 may scan the surface Wa while the wafer holding part 53 (wafer W) moves from the first position P1 to the second position P2, or while the wafer holding part 53 moves from the second position P2 to the first position P1. The imaging unit 91 can image the entire surface Wa by scanning the surface Wa while the wafer holding part 53 moves between the first position P1 and the second position P2.

[0056] The peripheral exposure device 50 has a peripheral exhaust section 110 (exhaust section) and a gas discharge section 120. The peripheral exhaust section 110 exhausts air from outside the peripheral edge of the wafer W held by the wafer holding section 53 at least during the peripheral exposure period. The peripheral exposure period is a period during which the exposure section 70 irradiates the peripheral region on the front surface Wa of the wafer W with exposure light while the wafer W is rotated by the wafer holding section 53. The gas discharge section 120 discharges an inert gas from inside the peripheral edge of the wafer W to between the irradiation member 73 of the exposure section 70 and the wafer W at least during the peripheral exposure period. The peripheral exhaust section 110 and the gas discharge section 120 will be described in detail later.

[0057] The peripheral exposure device 50 has a lower exhaust section 130. The lower exhaust section 130 exhausts the space inside the housing 51 below the wafer W held by the wafer holding section 53. The lower exhaust section 130 is disposed below the wafer W held by the wafer holding section 53, and may be formed to extend along the X-axis direction as shown in Fig. 6. The peripheral exposure device 50 may have a pair of lower exhaust sections 130, which may be disposed near a pair of side walls of the housing 51 that face each other in the Y-axis direction.

[0058] Each of the pair of lower exhaust units 130 may have a plurality of exhaust ports aligned along the X-axis direction. Gas inside the housing 51 is exhausted from the internal space of the housing 51 to the outside of the housing 51 via the plurality of exhaust ports of the lower exhaust unit 130. Each of the pair of lower exhaust units 130 may be connected to an exhaust pump via an exhaust path provided outside the housing 51.

[0059] 7(a) illustrates an example of the relative positions of the wafer W held by the wafer holding part 53 at the second position P2, the irradiation member 73 (exit slit 81), the peripheral exhaust part 110, and the gas discharge part 120 in a plan view. The peripheral exhaust part 110 and the gas discharge part 120 will be described below assuming that the wafer holding part 53 is disposed at the second position P2. The peripheral exhaust part 110 may exhaust air from an exhaust range that includes a portion that corresponds to the irradiation position IP by the exposure part 70, outside the periphery of the wafer W held by the wafer holding part 53, and is set to extend along the periphery.

[0060] In plan view (viewed from above), the outer peripheral exhaust section 110 is disposed outside the periphery of the wafer W held by the wafer holding section 53. The irradiation position IP by the exposure section 70 is the position at which the exposure section 70 irradiates the peripheral region on the front surface Wa of the wafer W with exposure light. The irradiation position IP by the exposure section 70 may be defined as any position overlapping with the exit slit 81 formed in the irradiation member 73 of the exposure section 70 in plan view, for example, the position of the center of the exit slit 81.

[0061] The location corresponding to the irradiation position IP included in the above exhaust range is a location that intersects with a virtual line IL1 passing through the center CP and the irradiation position IP on the circumference around the center CP of the wafer W held by the wafer holding unit 53. Here, one of the rotation directions of the wafer W by the wafer holding unit 53 is defined as a "rotation direction R1", and the other is defined as a "rotation direction R2". In a plan view, the rotation direction R1 is clockwise, and the rotation direction R2 is counterclockwise. In addition, in this specification, the terms "upstream" and "downstream" are used based on the rotation direction R1 (one direction). That is, when the wafer W rotates in the rotation direction R1, when one point on the periphery of the wafer W (for example, the notch portion) is focused on, the one point progresses from upstream to downstream on the circumference around the center CP.

[0062] The peripheral exhaust unit 110 may exhaust at least a portion of the outer periphery of the wafer W held by the wafer holding unit 53, the portion corresponding to the irradiation position IP, and a region downstream of the portion. The exhaust range by the peripheral exhaust unit 110 includes, for example, a first section located upstream of the portion corresponding to the irradiation position IP, and a second section located downstream of the portion corresponding to the irradiation position IP. The second section may be larger than the first section.

[0063] The outer peripheral exhaust unit 110 has, for example, a recovery member 112 and a suction member 118. The recovery member 112 is a member that forms a plurality of exhaust ports 113 that define the above-mentioned exhaust range, and a buffer space B1 (buffer space for exhaust) connected to the plurality of exhaust ports 113. As shown in FIG. 8(a) and FIG. 8(b), the plurality of exhaust ports 113 are arranged along the periphery of the wafer W held by the wafer holding unit 53. The plurality of exhaust ports 113 are arranged at intervals from each other. The range between the exhaust port 113 located at the most upstream position and the exhaust port 113 located at the most downstream position corresponds to the above-mentioned exhaust range. Note that the line on which the plurality of exhaust ports 113 are arranged does not need to coincide with the circumference around the center CP of the wafer W, and may be located on a circumference centered at a position different from the center CP (for example, a position near the center CP).

[0064] The total opening area of ​​one or more exhaust ports 113 arranged in the second section downstream of the location corresponding to the irradiation position IP may be larger than the total opening area of ​​one or more exhaust ports 113 arranged in the first section upstream of the location corresponding to the irradiation position IP. When an exhaust port 113 is located at the boundary between the first section and the second section, a part of the exhaust port 113 located in the first section is added to the opening area in the first section, and the remaining part of the exhaust port 113 located in the second section is added to the opening area in the second section. In one example, the number of exhaust ports 113 arranged in the second section is greater than the number of exhaust ports 113 arranged in the first section.

[0065] In the vertical direction, as shown in FIG. 8(a), the exhaust ports 113 may be disposed at the same height as one another. When focusing on one exhaust port 113, the height position of at least a part of the exhaust port 113 may be the same as the height position of at least a part of the wafer W held by the wafer holding unit 53 in the vertical direction. In the vertical direction, the height position of at least a part of the wafer W may be the same as the height position of at least a part of the lower half of the exhaust port 113, or may be the same as the height position of at least a part of the upper half of the exhaust port 113. From the viewpoint of further improving the recovery efficiency of the sublimate, the height position of the region between the front surface Wa and the facing portion 83a of the wafer W held by the wafer holding unit 53 in the vertical direction may be the same as the vicinity of the center of the exhaust port 113 in the vertical direction.

[0066] 8(a), the height position of the exhaust port 113 may be different from the height position of the wafer W held by the wafer holding part 53 in the vertical direction. In the vertical direction, the exhaust port 113 may be located above the wafer W or below the wafer W. The distance (shortest distance) between the exhaust port 113 and the wafer W in the vertical direction may be equal to or less than the size of the exhaust port 113 in the vertical direction.

[0067] In the vertical direction, the height position of at least a part of the exhaust port 113 may be the same as the height position of the facing portion 83a of the irradiation member 73. Unlike the example shown in Fig. 8(a), in the vertical direction, the exhaust port 113 may be located above the facing portion 83a or may be located below the facing portion 83a. When the facing portion 83a is not flat, the height position of the facing portion 83a is defined as the height position of the lowest part (the part located lowest) of the facing portion 83a.

[0068] The buffer space B1 may extend in a first direction and a second direction along the surface Wa of the wafer W held by the wafer holding part 53. The first direction is the direction in which the imaginary line IL (line) passing through the center CP of the wafer W held by the wafer holding part 53 and the irradiation position IP by the exposure part 70 extends. The second direction is a direction perpendicular to the first direction. The first direction may be the X-axis direction, and the second direction may be the Y-axis direction. In the following description, the first direction is assumed to be the X-axis direction, and the second direction is assumed to be the Y-axis direction.

[0069] The recovery member 112 includes a bottom 112a, a sidewall 112b, and an upper portion 112c. In Figures 8(a) and 8(b), the upper portion 112c is omitted. The bottom 112a is formed in a plate shape, and a part of its periphery is curved so as to be recessed in a direction away from the center CP of the wafer W held by the wafer holding part 53. The other part of the periphery of the bottom 112a is formed in a straight line. The bottom 112a defines the lower surface of the buffer space B1.

[0070] The sidewall 112b is formed to extend upward from the periphery of the bottom 112a and its vicinity. The sidewall 112b defines the side of the buffer space B1. A plurality of exhaust ports 113 are formed in a portion of the sidewall 112b that corresponds to a part of the curved periphery of the bottom 112a. The upper portion 112c is connected to the upper portion of the sidewall 112b and defines the upper surface of the buffer space B1. The plurality of exhaust ports 113 formed in the sidewall 112b connect the buffer space B1 to a space outside the buffer space B1. In a plan view, the plurality of exhaust ports 113 face the periphery of the wafer W held by the wafer holding portion 53.

[0071] The suction member 118 sucks the inside of the buffer space B1 through a suction port 119 that opens in the buffer space B1. The suction member 118 is, for example, a pipe formed in a cylindrical shape. As shown in FIG. 7(b), the bottom of the suction member 118 may be overlapped with the upper part 112c of the recovery member 112, and the suction port 119 that connects the buffer space B1 and the flow path in the suction member 118 may be formed in the overlapped portion. An end of the pipe in the suction member 118 may be connected to an exhaust pump through an exhaust path provided outside the housing 51.

[0072] The suction member 118 sucks the inside of the buffer space B1, so that the gas in the buffer space B1 is exhausted to the outside of the housing 51 (peripheral exposure device 50). Accordingly, the gas around the exhaust ports 113 is taken into the buffer space B1 through these exhaust ports. As described above, the peripheral exhaust unit 110 exhausts through the multiple exhaust ports 113 and the buffer space B1. The peripheral exhaust unit 110 exhausts from the above-mentioned exhaust range around the periphery of the wafer W, so that sublimates generated from the resist film due to the irradiation of the exposure light during the above-mentioned peripheral exposure period can be collected.

[0073] When viewed from a direction perpendicular to the front surface Wa of the wafer W held by the wafer holding part 53 (vertically upward), at least a portion of the buffer space B1 is formed such that the size in the X-axis direction decreases as the distance from the suction port 119 in the Y-axis direction increases. That is, in at least a portion of the buffer space B1, when the buffer space B1 is observed in the Y-axis direction starting from the suction port 119, the size in the X-axis direction (space size) decreases with increasing distance from the suction port 119.

[0074] 7(a), the portion of the buffer space B1 located between the imaginary line IL and the suction port 119 is formed so that the size in the X-axis direction decreases as the distance from the suction port 119 in the Y-axis direction increases. If the size of the buffer space B1 in the X-axis direction were constant regardless of the position in the Y-axis direction, the exhaust port 113 located closer to the suction port 119 would tend to have a larger exhaust volume, and the exhaust port 113 located farther from the suction port 119 would tend to have a smaller exhaust volume. In response to this, by increasing the space closer to the suction port 119 and decreasing the space farther from the suction port 119, the difference in exhaust volume caused by the distance from the suction port 119 is reduced.

[0075] In the Y-axis direction, the irradiation position IP and the suction port 119 may be located between both ends of the buffer space B1. For ease of explanation, of the two ends of the buffer space B1, one end located to the left when looking at the irradiation position IP from the center CP is referred to as the "upper end" and the other end located to the right is referred to as the "lower end." In the Y-axis direction, the upper end of the buffer space B1, the irradiation position IP, the suction port 119, and the lower end of the buffer space B1 are arranged in this order.

[0076] In the Y-axis direction, the irradiation position IP may be set closer to the upper end between the upper end (first end) and lower end (second end) of the buffer space B1. In other words, the distance (shortest distance) in the Y-axis direction between the upper end of the buffer space B1 and the irradiation position IP may be shorter than the distance (shortest distance) in the Y-axis direction between the lower end of the buffer space B1 and the irradiation position IP.

[0077] In the Y-axis direction, the suction port 119 may be located between the upper end and the lower end of the buffer space B1 and closer to the lower end. That is, the distance (shortest distance) in the Y-axis direction between the upper end of the buffer space B1 and the suction port 119 may be greater than the distance (shortest distance) in the Y-axis direction between the lower end of the buffer space B1 and the suction port 119. In the Y-axis direction, the suction port 119 may be located near the lower end of the buffer space B1. For example, in the Y-axis direction, the distance between the suction port 119 and the lower end of the buffer space B1 is smaller than the distance between the suction port 119 and the center of the buffer space B1 in the Y-axis direction.

[0078] The gas discharge unit 120 discharges the inert gas Gn from inside the periphery of the wafer W held by the wafer holding unit 53 toward between the surface Wa of the wafer W held by the wafer holding unit 53 and the facing portion 83a of the exposure unit 70 facing the surface Wa. In a plan view, the gas discharge unit 120 may be located on the imaginary line IL1 and disposed between the center CP and the irradiation position IP. The gas discharge unit 120 may be fixed to the irradiation member 73 via a fixing member. The inert gas Gn discharged from the gas discharge unit 120 is, for example, nitrogen gas. The amount of gas discharged from the gas discharge unit 120 (amount discharged per unit time) may be larger than the amount of gas discharged from the gas discharge unit 85 in the irradiation member 73 (amount discharged per unit time).

[0079] As shown in Fig. 9(a) and Fig. 9(b), the gas discharge part 120 has a main body part 125 and a plurality of discharge ports 121. The main body part 125 is formed in a block shape. The plurality of discharge ports 121 are formed in the main body part 125 and are openings for discharging the inert gas Gn. The plurality of discharge ports 121 are aligned in the Y-axis direction. The height positions of the plurality of discharge ports 121 may be the same.

[0080] A buffer space B2 (buffer space for discharge) connected to the multiple discharge ports 121 is formed inside the main body 125. The buffer space B2 and each of the multiple discharge ports 121 are connected via a discharge path 122. The gas discharge unit 120 has a gas supply unit 129 that supplies an inert gas Gn to the buffer space B2. The inert gas Gn is discharged from the multiple discharge ports 121 by supplying the inert gas Gn from the gas supply unit 129 to the buffer space B2.

[0081] The main body 125 is disposed so that the multiple discharge ports 121 face the irradiation member 73 of the exposure unit 70. At least some of the multiple discharge ports 121 are formed so that the inert gas Gn discharged from the discharge ports 121 passes through a region between the facing portion 83a and the surface Wa of the wafer W held by the wafer holding unit 53 and flows to the outside of the wafer W. In the vertical direction, the distance between the facing portion 83a and the surface Wa of the wafer W held by the wafer holding unit 53 may be 0.2 mm to 2.0 mm, 0.25 mm to 1.8 mm, or 0.3 mm to 1.5 mm.

[0082] Each of the multiple discharge ports 121 may be formed to discharge the inert gas Gn obliquely downward. A discharge path 122 connecting the buffer space B2 and the discharge port 121 may be formed to extend obliquely downward from the buffer space B1.

[0083] The angle of the discharge direction of the inert gas Gn from the discharge port 121 with respect to the surface Wa of the wafer W held by the wafer holding part 53 (hereinafter referred to as "discharge angle θg") may be 5° or more, 5.5° or more, 6° or more, or 6.5° or more, from the viewpoint of arranging the main body part 125 away from the surface Wa. If the discharge angle θg is smaller than 5°, there is a possibility that the main body part 125 will come into contact with the surface Wa of the wafer W held by the wafer holding part 53 due to component tolerances.

[0084] The discharge angle θg may be 15° or less, 14.5° or less, 14° or less, or 13.5° or less from the viewpoint of facilitating the flow of the inert gas Gn discharged from the discharge port 121 outside the peripheral edge of the wafer W. If the discharge angle θg is greater than 15°, it may be difficult for the inert gas Gn discharged from the discharge port 121 to flow outside the peripheral edge of the wafer W. In one example, the discharge angle θg is 5° to 15°, or 6.5° to 13.5°.

[0085] When focusing on one of at least a portion of the multiple discharge ports 121, the discharge angle θg may be measured as an angle between a virtual line IL2 and the surface Wa of the wafer W held by the wafer holding unit 53. The virtual line IL2 is a virtual line that passes through the center of the discharge port 121 and extends in the extension direction of the discharge path 122 connected to the discharge port 121. The virtual line IL2 may pass through a space between the facing portion 83a and the surface Wa of the wafer W held by the wafer holding unit 53. As a result, the inert gas Gn is discharged from the discharge port 121 toward the space.

[0086] 3, the edge exposure apparatus 50 has a control unit 150. The control unit 150 controls various members included in the edge exposure apparatus 50. The control unit 150 may be a computer separate from the control device 100 provided in the wafer processing system 1.

[0087] The control unit 150 may at least execute control to irradiate the exposure light from the exposure unit 70 while rotating the wafer W in the rotation direction R1 by the wafer holding unit 53 with the exhaust by the peripheral exhaust unit 110 continuing. In addition to such control, the control unit 150 may execute control to irradiate the exposure light from the exposure unit 70 while rotating another wafer W in the rotation direction R2 by the wafer holding unit 53 with the exhaust by the peripheral exhaust unit 110 continuing.

[0088] As shown in FIG. 10, the control unit 150 includes, for example, a circuit 210. The circuit 210 includes a processor 211, a memory 212, a storage 213, and an input / output port 214. The storage 213 is configured with one or more nonvolatile memory devices such as a flash memory or a hard disk. The storage 213 stores a program that causes the apparatus to hold and rotate the wafer W by the wafer holding unit 53, irradiate the peripheral region of the front surface Wa of the wafer W held by the wafer holding unit 53 with exposure light by the exposure unit 70, and evacuate the wafer W by the outer periphery exhaust unit 110 from an exhaust range that includes a location corresponding to the irradiation position IP on the outside of the peripheral edge of the wafer W held by the wafer holding unit 53 and is set to extend along the peripheral edge. The storage 213 functions as a program storage unit.

[0089] The memory 212 is composed of one or more volatile memory devices such as a random access memory. The memory 212 temporarily stores a program loaded from the storage 213. The processor 211 is composed of one or more arithmetic devices such as a CPU (Central Processing Unit) or a GPU (Graphics Processing Unit). The processor 211 controls various members included in the peripheral exposure apparatus 50 by executing the program loaded in the memory 212. The calculation results by the processor 211 are temporarily stored in the memory 152. The input / output port 214 inputs and outputs information between the wafer holding unit 53, the exposure unit 70, the peripheral exhaust unit 110, the gas discharge unit 120, etc. in response to a request from the processor 211.

[0090] The various functions of the control unit 150 may be configured by a dedicated logic circuit or an ASIC (Application Specific Integrated Circuit) that integrates the dedicated logic circuit instead of a program. The control unit 150 may be configured by a plurality of computers that are communicably connected to each other. The control unit 150 may be a part of the control device 100 provided in the wafer processing system 1. The control device 100 may have a circuit similar to the circuit 210 shown in FIG. 10.

[0091] [Edge exposure method] Next, a description will be given of a peripheral exposure method executed using the peripheral exposure apparatus 50. This peripheral exposure method may include holding and rotating the wafer W by the wafer holding part 53, irradiating the peripheral region on the front surface Wa of the wafer W held by the wafer holding part 53 with exposure light, and exhausting air from an exhaust range that includes a location outside the peripheral edge of the wafer W held by the wafer holding part 53 that corresponds to the irradiation position (irradiation position IP) of the exposure light and is set to extend along the peripheral edge.

[0092] The peripheral exposure method may include holding the wafer W by the wafer holding unit 53 and rotating it in a rotation direction R1, irradiating a peripheral region on the front surface Wa of the wafer W held by the wafer holding unit 53 with exposure light, and exhausting at least a portion of the outside of the peripheral edge of the wafer W held by the wafer holding unit 53 that corresponds to an irradiation position (irradiation position IP) of the exposure light and a region downstream of the portion when the rotation direction R1 is used as a reference by the peripheral exhaust unit 110. The peripheral exposure method may include emitting the exposure light toward the peripheral region while rotating the wafer W in the rotation direction R1 by the wafer holding unit 53 with the exhaust by the peripheral exhaust unit 110 being continued.

[0093] 11 shows a series of processes executed by the control unit 150 when performing peripheral exposure processing and inspection processing for one wafer W. In this series of processes, the control unit 150 executes step S11 while the wafer holding unit 53 is disposed at the first position P1 and exhaust by the outer periphery exhaust unit 110 and the lower part exhaust unit 130 is continued. While the following series of processes are being executed, exhaust by the outer periphery exhaust unit 110 and the lower part exhaust unit 130 is continued. In step S11, for example, the control unit 150 starts the discharge of the inert gas Gn from the gas discharge unit 120 and the discharge of the inert gas from the gas discharge unit 85 in the irradiation member 73 of the exposure unit 70.

[0094] Next, the control unit 150 executes steps S12 and S13. In step S12, for example, the control unit 150 controls the wafer transport device 33, the wafer holding unit 53, and the like so that the wafer W to be processed is carried into the housing 51. In step S13, for example, the control unit 150 controls the movement drive unit 55 so that the wafer holding unit 53 moves from the first position P1 to the second position P2. The control unit 150 also detects an index portion of the wafer W with the sensor unit 61, and aligns the attitude of the wafer W with the wafer holding unit 53 so that the index portion is positioned at a predetermined angular position.

[0095] Next, the control unit 150 executes steps S14 and S15. In step S14, for example, the control unit 150 starts the rotation of the wafer W by the wafer holding unit 53 and the irradiation of the exposure light by the exposure unit 70. This starts the irradiation of the exposure light to the peripheral area on the front surface Wa of the wafer W. The control unit 150 may control the rotation drive unit 53b so that the wafer W rotates in the rotation direction R1. In step S15, for example, the control unit 150 waits until the wafer W rotates by a predetermined set angle. The set angle may be set to 360° or more so that the entire peripheral area on the front surface Wa of the wafer W is exposed.

[0096] Next, the control unit 150 executes step S16. In step S16, for example, the control unit 150 stops the rotation of the wafer W by the wafer holding unit 53 and the irradiation of the exposure light by the exposure unit 70. Until step S16 is executed, the peripheral region of the front surface Wa of the wafer W is irradiated with the exposure light, and sublimates are generated from the resist film formed on the front surface Wa. Since the exhaust by the outer peripheral exhaust unit 110 is continued, the sublimates generated from the resist film can be collected by the outer peripheral exhaust unit 110. When the sublimates flow below the wafer W, the sublimates that flow below can be collected by the lower exhaust unit 130.

[0097] Next, the control unit 150 executes step S17. In step S17, for example, the control unit 150 controls the movement driver 55 so that the wafer holding unit 53 moves from the second position P2 to the first position P1. The control unit 150 causes the imaging unit 91 of the inspection unit 90 to capture an image of the front surface Wa of the wafer W while the wafer holding unit 53 is moving to the first position P1. The control unit 150 may transmit the imaging data obtained from the imaging unit 91 to the control device 100.

[0098] Next, the control unit 150 executes steps S18 and S19. In step S18, for example, the control unit 150 controls the wafer holding unit 53 and the wafer transport device 33 to transport the wafer W out of the housing 51. In step S19, for example, the control unit 150 stops the discharge of the inert gas Gn from the gas discharge unit 120 and the discharge of the inert gas from the gas discharge unit 85 in the irradiation member 73 of the exposure unit 70.

[0099] The control unit 150 may repeat the series of processes in steps S11 to S19 for each of the subsequent wafers W. When performing the series of processes for some of the subsequent wafers W, the control unit 150 may rotate the wafer W in the rotation direction R2 by the wafer holding unit 53 in steps S14 to S16.

[0100] [Variations] The series of processes shown in Fig. 11 is an example and can be modified as appropriate. In the series of processes described above, the control unit 150 may execute one step and the next step in parallel, or may execute each step in an order different from the example described above. The control unit 150 may omit any step, or may execute a process different from the example described above in any step.

[0101] As shown in Fig. 12, the peripheral exposure device 50 may have a peripheral exhaust part 110A instead of the peripheral exhaust part 110. The peripheral exhaust part 110A includes a recovery member 112A, a suction member 118A, and a suction member 118B. The buffer space B1 formed by the recovery member 112A may be line-symmetric with respect to a virtual line IL1 in a plan view. In Fig. 12, the upper part of the recovery member 112A is omitted.

[0102] The multiple exhaust ports 113 formed in the collection member 112A may also be line-symmetrical with respect to the imaginary line IL1 in a plan view. Of the multiple exhaust ports 113 formed in the collection member 112A, the total opening area of ​​one or more exhaust ports 113 located in a section upstream of the location corresponding to the irradiation position IP may be approximately equal to the total opening area of ​​one or more exhaust ports 113 located in a section downstream of the location corresponding to the irradiation position IP.

[0103] The suction port 119 formed in the suction member 118A and opening into the buffer space B1 may be disposed near the upper end of the buffer space B1 in the Y-axis direction. The suction port 119 formed in the suction member 118B and opening into the buffer space B1 may be disposed near the lower end of the buffer space B1 in the Y-axis direction.

[0104] The peripheral exposure device 50 has an opening / closing member 140A and an opening / closing member 140B. The opening / closing member 140A is provided in a flow path connected to the suction member 118A, and is a member capable of switching suction by the suction member 118A on and off. The opening / closing member 140B is provided in a flow path connected to the suction member 118B, and is a member capable of switching suction by the suction member 118B on and off. The opening / closing members 140A and 140B are, for example, dampers or valves.

[0105] The control unit 150 may control the opening / closing members 140A and 140B so that, when the wafer W is rotated in the rotation direction R1 to perform edge exposure, the suction by the suction member 118A is turned off and the suction by the suction member 118B is turned on. The control unit 150 may control the opening / closing members 140A and 140B so that, when the wafer W is rotated in the rotation direction R2 to perform edge exposure, the suction by the suction member 118A is turned on and the suction by the suction member 118B is turned off.

[0106] The control unit 150 may control the opening / closing members 140A and 140B so that, when the wafer W is rotated by the wafer holding unit 53 to perform peripheral exposure, both the suction by the suction member 118A and the suction by the suction member 118B are turned on, regardless of the rotation direction of the wafer W.

[0107] 13, in the case where a notch portion N is formed as an index portion on the periphery of the wafer W, the control unit 150 may change the exhaust amount (exhaust amount per unit time) by the peripheral exhaust unit 110 when the exposure light is irradiated onto a predetermined range including the notch portion N. In this case, the peripheral exhaust unit 110 is configured to be capable of adjusting the exhaust amount. The control unit 150 may control the peripheral exhaust unit 110 so that the exhaust amount during the period when the exposure light is irradiated onto the predetermined range PR including the notch portion N from the exposure unit 70 is larger than the exhaust amount during the period when the exposure light is irradiated onto a range other than the predetermined range PR from the exposure unit 70.

[0108] The above-mentioned predetermined range PR for increasing the exhaust amount is a range of positions (angles) in the circumferential direction around the center CP, and may be an angle range corresponding only to the notch portion N, or may be an angle range corresponding to the notch portion N and its vicinity as shown in FIG. 13. The control unit 150 may switch the exhaust amount from the peripheral exhaust unit 110 from the first exhaust amount to a second exhaust amount larger than the first exhaust amount when one end of the predetermined range PR reaches the irradiation position IP due to the rotation of the wafer W. After switching to the second exhaust amount, the control unit 150 may switch the exhaust amount from the peripheral exhaust unit 110 from the second exhaust amount to the first exhaust amount when the other end of the predetermined range PR reaches the irradiation position IP due to the rotation of the wafer W. The control unit 150 may maintain the current exhaust amount from the peripheral exhaust unit 110 except for the two places where the exhaust amount is switched.

[0109] When the exposure light is irradiated onto the predetermined range PR including the notch portion N, the control unit 150 may change the amount of gas discharged by the gas discharge unit 120 (amount discharged per unit time) instead of or in addition to the exhaust amount from the outer circumferential exhaust unit 110. In this case, the gas discharge unit 120 (or the gas supply unit 129) is configured to be able to adjust the amount of gas discharged. The control unit 150 may control the gas discharge unit 120 so that the amount of gas discharged during a period when the exposure light is irradiated onto the predetermined range PR including the notch portion N from the exposure unit 70 is greater than the amount of gas discharged during a period when the exposure light is irradiated onto a range other than the predetermined range PR from the exposure unit 70.

[0110] The control unit 150 may switch the discharge amount from the gas discharge unit 120 from the first discharge amount to a second discharge amount greater than the first discharge amount when one end of the predetermined range PR reaches the irradiation position IP due to the rotation of the wafer W. After switching to the second discharge amount, the control unit 150 may switch the discharge amount from the gas discharge unit 120 from the second discharge amount to the first discharge amount when the other end of the predetermined range PR reaches the irradiation position IP due to the rotation of the wafer W. The control unit 150 may maintain the discharge amount from the gas discharge unit 120 at the current amount except for the two points where the discharge amount is switched.

[0111] With respect to the rotation direction R1 as a reference, from the viewpoint of exhausting gas from a location corresponding to the irradiation position IP and an area downstream of that location, the exhaust range by the peripheral exhaust unit of the peripheral exposure device 50 does not have to be along the periphery of the wafer W. As shown in Figures 14(a) and 14(b), the peripheral exposure device 50 may have a peripheral exhaust unit 110B instead of the peripheral exhaust unit 110. The peripheral exhaust unit 110B is a pipe that guides the gas to be exhausted to the outside of the housing 51.

[0112] At least a part of the outer circumferential exhaust section 110B may be formed to extend along the Y-axis direction, and a plurality of exhaust ports 115 are formed at the bottom of the part extending along the Y-axis direction. The plurality of exhaust ports 115 are aligned along the Y-axis direction. At least a part of the plurality of exhaust ports 115 is disposed downstream of a position corresponding to the irradiation position IP. Of the plurality of exhaust ports 115, the total opening area of ​​the exhaust ports 115 downstream of a position corresponding to the irradiation position IP may be smaller than the total opening area of ​​the exhaust ports 115 upstream of a position corresponding to the irradiation position IP. Even when the outer circumferential exhaust section 110B is provided, the control section 150 may execute the series of processes shown in FIG. 11.

[0113] 15, the peripheral exposure device 50 may have a peripheral exhaust part 110C instead of the peripheral exhaust part 110. The peripheral exhaust part 110C includes a recovery member 112C and a suction member 180. The buffer space B1 formed by the recovery member 112C spreads in the X-axis direction and the Y-axis direction, similar to the buffer space B1 formed by the recovery member 112 and the buffer space B1 formed by the recovery member 112A. The buffer space B1 of the recovery member 112C is formed to be line-symmetrical with respect to the imaginary line IL1 when viewed from a direction perpendicular to the surface Wa of the wafer W held by the wafer holding part 53 (vertically upward). The size of the buffer space B1 of the recovery member 112C in the vertical direction may be approximately constant.

[0114] The width of the buffer space B1 of the recovery member 112C in the Y-axis direction is smaller than the width of the wafer W in the Y-axis direction. The width of the buffer space B1 in the Y-axis direction is defined as the distance (shortest distance) between the upper end and the lower end of the buffer space B1 in the Y-axis direction. The width of the wafer W in the Y-axis direction corresponds to, for example, the diameter of the wafer W. The width of the buffer space B1 of the recovery member 112C in the Y-axis direction may be 4 / 5 or less, 3 / 4 or less, or 2 / 3 or less of the width of the wafer W in the Y-axis direction. The width of the buffer space B1 of the recovery member 112C in the Y-axis direction may be larger than the radius of the wafer W or smaller than the radius of the wafer W. The width of the buffer space B1 of the recovery member 112C in the Y-axis direction may be 1 / 3 or more, 1 / 4 or more, or 1 / 5 or more of the width of the wafer W in the Y-axis direction.

[0115] Fig. 16 shows a perspective view of the recovery member 112C. Note that an upper portion 112c included in the recovery member 112C is omitted in Figs. 15 and 16. The multiple exhaust ports 113 formed in the recovery member 112C may also be line-symmetrical with respect to the imaginary line IL1 in a plan view. Of the multiple exhaust ports 113 formed in the recovery member 112C, the total opening area of ​​one or more exhaust ports 113 located in a section upstream of the location corresponding to the irradiation position IP may be approximately equal to the total opening area of ​​one or more exhaust ports 113 located in a section downstream.

[0116] The suction member 180 sucks the inside of the buffer space B1 through a suction port 189 that opens in the buffer space B1. When viewed from a direction perpendicular to the front surface Wa of the wafer W held by the wafer holding part 53 (vertically upward), the suction port 189 is disposed on an imaginary line IL1. In a plan view, the suction port 189 may be formed to be line-symmetrical with respect to the imaginary line IL1. In this case, the distance (shortest distance) in the Y-axis direction between the upper end of the buffer space B1 and the suction port 189 is approximately equal to the distance (shortest distance) in the Y-axis direction between the lower end of the buffer space B1 and the suction port 189.

[0117] The suction member 180 includes an exhaust block 182 and an exhaust pipe 184. The exhaust block 182 is disposed at a position overlapping the recovery member 112C, and defines a buffer space for exhaust (hereinafter referred to as "buffer space B11"; see also FIG. 17). The buffer space B11 is connected to the buffer space B1 via the suction port 119. The exhaust pipe 184 is a pipe having one end connected to the exhaust block 182, and directs gas in the buffer space B11 to the outside of the housing 51. The exhaust pipe 184 may be a curved cylindrical pipe.

[0118] 17, the outer peripheral exhaust section 110C may have an adjustment member 190. The adjustment member 190 is a member for adjusting the flow rate of gas flowing from the buffer space B1 to the buffer space B11. The bottom of the exhaust block 182 is overlapped on the upper part 112c of the recovery member 112C via the adjustment member 190. That is, the recovery member 112C, the adjustment member 190, and the exhaust block 182 are arranged in this order from below. An opening 112d is formed in the upper part 112c of the recovery member 112C, and the opening edge of the opening 112d may be substantially aligned with the opening edge of the suction port 189 in a plan view.

[0119] The adjustment member 190 is formed, for example, in a plate shape. The adjustment member 190 is provided with an opening 199 in the thickness direction. The size of the opening 199 is smaller than the size of the suction port 189. The flow rate (exhaust flow rate) of the gas flowing from the buffer space B1 to the buffer space B11 is determined by the size of the opening 199. Adjustment of the gas flow rate by the adjustment member 190 means changing the gas flow rate from the flow rate when the adjustment member 190 is not provided by the opening 199 smaller than the suction port 189 (or the opening 112d). Depending on the peripheral exposure device 50 in which the peripheral exhaust section 110C is provided, it may be difficult to change the size of the suction port 189 or the opening 112d. Even in such a case, the exhaust flow rate can be adjusted by the opening 199 of the adjustment member 190.

[0120] The exhaust block 182 may be overlapped on the collection member 112C so as to contact the upper portion 112c of the collection member 112C without providing the adjustment member 190. Even when the peripheral exhaust unit 110C is provided, the control unit 150 may execute the series of processes shown in FIG.

[0121] The peripheral exposure device 50 may have a gas discharge unit 120A instead of the gas discharge unit 120. FIG. 18 shows the gas discharge unit 120A in a schematic manner, and shows a plurality of discharge ports included in the gas discharge unit 120A and a plurality of flow paths connected to the plurality of discharge ports. Like the gas discharge unit 120, the gas discharge unit 120A discharges an inert gas Gn from inside the periphery of the wafer W held by the wafer holding unit 53 toward between the front surface Wa of the wafer W held by the wafer holding unit 53 and the facing portion 83a of the exposure unit 70 facing the front surface Wa.

[0122] Among the multiple outlets 121, each pair of outlets 121 at both ends is referred to as "outlet 121a", and the other outlets 121 are referred to as "outlet 121b". The gas discharge unit 120A is configured so that the discharge flow rate (discharge flow rate per unit time) from each pair of outlets 121 is larger than the discharge flow rate from each outlet 121b. The flow paths 122a connected to each pair of outlets 121a and the flow paths 122b connected to each outlet 121b may be connected to different buffer spaces (buffer spaces for discharge). By increasing the discharge flow rate from each pair of outlets 121a, the amount of sublimate scattered outside the pair of outlets 121a can be reduced.

[0123] The peripheral exposure device 50 may have a function of performing peripheral exposure without having a function of performing an inspection process. In the peripheral exhaust sections 110, 110A, 110C, one or more openings formed to extend along the peripheral edge of the wafer W may be provided instead of the multiple exhaust ports 113 arranged along the peripheral edge of the wafer W. In the peripheral exhaust section 110B, one or more openings formed to extend along the Y-axis direction may be provided instead of the multiple exhaust ports 115 arranged along the Y-axis direction.

[0124] In one example among the various examples described above, at least a part of the matters described in another example may be combined.

[0125] [Summary of this disclosure] The present disclosure includes the following configurations or methods [1] to

[16] .

[0126] [1] A peripheral exposure device (50) comprising: a substrate holding unit (53) that holds and rotates a substrate (W); an exposure unit (70) that irradiates a peripheral region on a surface of the substrate (W) held by the substrate holding unit (53) with exposure light; and an exhaust unit (110, 110A, 110C) that exhausts air from an exhaust range that includes a location outside the peripheral edge of the substrate (W) held by the substrate holding unit (53) that corresponds to an irradiation position (IP) by the exposure unit (70) and is set to extend along the peripheral edge. In this peripheral exposure device (50), while the substrate (W) is rotated and the peripheral region of the surface (Wa) of the substrate (W) is exposed, the exhaust unit (110, 110A, 110C) can exhaust air from an exhaust range extending along the peripheral edge of the substrate (W). As the substrate (W) rotates, sublimates generated by irradiation with light for exposure can also scatter along the peripheral edge of the substrate (W). Therefore, in the peripheral exposure device (50), the sublimates can be collected more efficiently than when exhausting air from one location on the peripheral edge of the substrate (W). This is therefore useful for reducing the possibility of sublimates adhering to the substrate (W) to be subsequently processed.

[0127] [2] The peripheral exposure apparatus (50) described in [1] above, wherein the exhaust section (110, 110A, 110C) has a plurality of exhaust ports (113) arranged along the periphery and an exhaust buffer space (B1) connected to the plurality of exhaust ports (113), and the exhaust section (110, 110A, 110C) exhausts air through the plurality of exhaust ports (113) and the exhaust buffer space (B1). In this case, the exhaust section (110, 110A, 110C) and the members connected thereto can be simplified compared to the case where a flow path for exhaust is formed for each of the exhaust ports (113). Therefore, it is useful for achieving both efficient recovery of the sublimate and simplification of the device.

[0128] [3] The peripheral exposure apparatus (50) described in [2] above, wherein the exhaust section (110, 110A, 110C) further includes a suction member (118, 118A, 118B, 180) that sucks air into the exhaust buffer space (B1) through a suction port (119, 189) that opens in the exhaust buffer space (B1). In this case, even if a buffer space is provided inside the peripheral exposure device (50), the gas can be discharged to the outside of the peripheral exposure device (50) by the suction members (118, 118A, 118B, 180).

[0129] [4] The peripheral exposure device (50) described in [3] above, wherein the exhaust buffer space (B1) expands in a first direction and a second direction along a surface (Wa) of the substrate (W) held by the substrate holding part (53), the first direction is a direction along which a line (IL1) passing through a center (CP) of the substrate (W) held by the substrate holding part (53) and an irradiation position (IP) by the exposure part (70) extends, and the second direction is a direction perpendicular to the first direction, and at least a portion of the exhaust buffer space (B1) is formed such that its size in the first direction decreases as the distance from the suction port (119) in the second direction increases when viewed from a direction perpendicular to the surface of the substrate (W) held by the substrate holding part (53). In this case, as described above, it is possible to reduce the difference in exhaust amount between the plurality of exhaust ports (113) depending on the distance from the suction port (119).

[0130] [5] The peripheral exposure device (50) described in [2] above, wherein the exhaust buffer space (B1) extends in a first direction and a second direction along a surface (Wa) of the substrate (W) held by the substrate holding part (53), the first direction being a direction along which a line (IL1) passing through a center (CP) of the substrate (W) held by the substrate holding part (53) and an irradiation position (IP) by the exposure part (70) extends, and the second direction is a direction perpendicular to the first direction, and the exhaust buffer space (B1) is formed to be linearly symmetrical with respect to the line (IL1) when viewed from a direction perpendicular to the surface (Wa) of the substrate (W) held by the substrate holding part (53). In this case, the amount of sublimate recovered from the recovery member (112C) forming the buffer space (B1) is approximately the same between one rotation direction (R1) and the other rotation direction (R2) of the substrate (W) by the substrate holder (53). This makes it possible to reduce the variation in processing between different rotation directions.

[0131] [6] The peripheral exposure apparatus (50) described in [5] above, wherein the exhaust section (110C) further has a suction member (180) that sucks air into the exhaust buffer space (B1) through a suction port (189) that opens in the exhaust buffer space (B1), and the suction port (189) is arranged on a line (IL1) when viewed from a direction perpendicular to the surface (Wa) of the substrate (W) held by the substrate holding section (53). By definition, the irradiation position (IP) of the exposure unit (70) is located on the line (IL1). It has been found that the amount of sublimate generated at the irradiation position (IP) tends to be greater than at other locations. In the above configuration, by arranging the suction port (189) on the line (IL1), strong exhaust is performed from a location close to the irradiation position (IP) within the exhaust range. This allows the sublimate to be efficiently collected.

[0132] [7] The edge exposure apparatus (50) according to [5] or [6] above, wherein the width of the exhaust buffer space (B1) in the second direction is smaller than the width of the substrate (W) in the second direction. Various members other than the exhaust unit (110C) may be arranged inside the peripheral exposure device (50). In the above configuration, the exhaust buffer space (B1) is arranged so that the line (IL1) passes through, and this makes it possible to efficiently collect sublimates from the location where they are most likely to be generated while avoiding interference between the peripheral exhaust unit (110C) and other members.

[0133] [8] The exhaust unit (110, 110A) further includes suction members (118, 118A, 118B) that suck air into the exhaust buffer space (B1) through a suction port (119) that opens in the exhaust buffer space (B1). The exhaust buffer space (B1) extends in a first direction and a second direction along a surface (Wa) of the substrate (W) held by the substrate holding unit (53). The first direction is a distance between a center (CP) of the substrate (W) held by the substrate holding unit (53) and an irradiation position ( the second direction is a direction in which a line (IL1) passing through the exhaust buffer space (B1) and the irradiated position (IP) of the exposure section (70) extends, the second direction is a direction perpendicular to the first direction, in the second direction, the irradiation position (IP) of the exposure section (70) is set between the first end (upper end) and the second end (lower end) in the exhaust buffer space (B1) and closer to the first end (upper end), and in the second direction, the suction port (119) is located between the first end (upper end) and the second end (lower end) and closer to the second end (lower end). In this case, it is easy to avoid interference between the suction member (118) provided with the suction port (119) and the exposure section (70) that irradiates the exposure light.

[0134] [9] A peripheral exposure device (50) comprising: a substrate holding unit (53) that holds and rotates a substrate (W); an exposure unit (70) that irradiates a peripheral region of a surface (Wa) of the substrate (W) held by the substrate holding unit (53) with exposure light; and an exhaust unit (110, 110A, 110B, 110C) that exhausts air from at least a portion of the outer side of the peripheral edge of the substrate (W) held by the substrate holding unit (53) that corresponds to a position of irradiation (IP) by the exposure unit (70) and a region downstream of said portion, when one direction (R1) of rotation of the substrate (W) by the substrate holding unit (53) is used as a reference; and a control unit (150) that controls the emission of exposure light from the exposure unit (70) while rotating the substrate (W) in the one direction (R1) by the substrate holding unit (53) while continuing exhaust by the exhaust unit (110, 110A, 110B, 110C). In this peripheral exposure device (50), when peripheral exposure is performed while rotating the substrate (W) in one direction (R1), the exhaust unit (110, 110A, 110B, 110C) exhausts air from a position downstream of the position corresponding to the irradiation region (IP). As the substrate (W) rotates in the one direction (R1), sublimates generated due to the irradiation of the exposure light may also be scattered further downstream in the one direction (R1). Therefore, in the peripheral exposure device (50), the sublimates can be collected more efficiently than when exhaust is not performed from a position downstream of the position corresponding to the irradiation region (IP). Therefore, it is useful for reducing the possibility that the sublimates will adhere to the substrate (W) to be subsequently processed.

[0135]

[10] The peripheral exposure device (50) described in any one of [1] to [9] above, further comprising a gas discharge unit (120, 120A) that discharges an inert gas (Gn) from inside the periphery of the substrate (W) held by the substrate holding unit (53) toward between a surface (Wa) of the substrate (W) held by the substrate holding unit (53) and an opposing portion (83a) of the exposure unit (70) that faces the surface (Wa) of the substrate (W). In this case, the inert gas (Gn) can move the sublimates generated by the irradiation of the exposure light from the exposure unit (70) outside the periphery of the wafer W. Since the exhaust units (110, 110A, 110B, 110C) are provided outside the periphery of the wafer W, the amount of sublimates collected by the exhaust units can be increased. Therefore, the sublimates can be collected more efficiently.

[0136]

[11] The peripheral exposure apparatus (50) according to

[10] above, wherein the gas discharge section (120) has a plurality of discharge ports (121) and a discharge buffer space (B1) connected to the plurality of discharge ports (121). By discharging the inert gas Gn from a plurality of discharge ports, the gas can be discharged more strongly even with the same discharge amount. Therefore, the sublimate can move further outward than the periphery of the substrate (W), and the sublimate can be collected more efficiently.

[0137]

[12] The peripheral exposure apparatus (50) according to item

[10] or

[11] above, wherein an angle (θg) of a discharge direction of the inert gas (Gn) from the discharge port (122) of the gas discharge unit (120) relative to a surface (Wa) of the substrate (W) held by the substrate holding unit (53) is 5° to 15°. As described above, if the angle (θg) is smaller than 5°, the main body of the gas discharge section (120) may come into contact with the surface (Wa) of the substrate (W). On the other hand, if the angle (θg) is larger than 15°, the inert gas (Gn) may not be able to move the sublimate outside the periphery of the substrate (W). By setting the angle (θg) to 5° to 15°, these possibilities can be reduced. When the distance between the facing portion (83a) and the surface (Wa) is smaller, it is more beneficial to set the angle (θg) to 5° to 15°.

[0138]

[13] A peripheral exposure apparatus (50) according to any one of [1] to [8] above, further comprising a control unit (150), wherein a notch portion (N) is formed on the periphery of the substrate (W), and the control unit (150) controls the exhaust units (110, 110A, 110B, 110C) so that the exhaust amount during a period when exposure light is irradiated from the exposure unit (70) to a predetermined range (PR) including the notch portion (N) is greater than the exhaust amount during a period when exposure light is irradiated from the exposure unit (70) to a range other than the predetermined range (PR). The amount of resist may be greater in the notch portion (N) than in other locations, and in such a case, a larger amount of sublimate may be generated in the notch portion (N). In the above configuration, when the predetermined range (PR) including the notch portion (N) is exposed, the amount of exhaust by the exhaust portion (110, 110A, 110B) increases, so that an increase in the amount of sublimate generated due to the notch portion (N) can be suppressed.

[0139]

[14] The peripheral exposure device (50) according to any one of [1] to [8] above, further comprising: a gas discharge unit (120) that discharges an inert gas (Gn) from inside a periphery of the substrate (W) held by the substrate holding unit (53) toward between a surface (Wa) of the substrate (W) held by the substrate holding unit (53) and an opposing portion (83a) of the exposure unit (70) that faces the surface (Wa) of the substrate (W), and a control unit (150), wherein a notch portion (N) is formed on the periphery of the substrate (W), and the control unit (150) controls the gas discharge unit (120) so that a discharge amount during a period when the exposure unit (70) is irradiating a predetermined range (PR) including the notch portion (N) with exposure light is greater than a discharge amount during a period when the exposure unit (70) is irradiating a range other than the predetermined range (PR). The amount of resist may be greater in the notch portion (N) than in other locations, and in such a case, a larger amount of sublimate may be generated in the notch portion (N). In the above configuration, when the predetermined range (PR) including the notch portion (N) is exposed, the amount of gas discharged from the gas discharge portion (120) increases, so that an increase in the amount of sublimate generated due to the notch portion (N) can be suppressed.

[0140]

[15] A peripheral exposure method comprising: holding and rotating a substrate (W) with a substrate holding part (53); irradiating a peripheral region of a surface (Wa) of the substrate (W) held by the substrate holding part (53) with exposure light; and exhausting air from an exhaust range set to extend along the peripheral region and including a location outside the peripheral region of the substrate (W) held by the substrate holding part (53) that corresponds to an irradiation position (IP) of the exposure light. This edge exposure method, like the edge exposure apparatus (50) described in [1] above, is useful for reducing the possibility of sublimate adhesion to the substrate (W) to be subsequently processed.

[0141]

[16] A peripheral exposure method including: holding a substrate (W) by a substrate holding part (53) and rotating it in one direction (R1); irradiating a peripheral region on a surface of the substrate (W) held by the substrate holding part (53) with exposure light; and exhausting air by an exhaust part (110, 110A, 110B, 110C) from at least a portion of the outside of the peripheral region of the substrate (W) held by the substrate holding part (53) corresponding to an irradiation position (IP) of the exposure light and a region downstream of said portion, when the one direction (R1) is used as a reference; wherein, while continuing exhaust by the exhaust part (110, 110A, 110B, 110C), the exposure light is emitted toward the peripheral region. This edge exposure method, like the edge exposure apparatus (50) described in [9] above, is useful for reducing the possibility of sublimate adhesion to the substrate (W) to be subsequently processed. [Explanation of symbols]

[0142] 1...wafer processing system, W...wafer, Wa...surface, CP...center, 50...periphery exposure device, 53...wafer holding section, 70...exposure section, IP...irradiation position, 83a...opposing portion, 110, 110A, 110B, 110C...periphery exhaust section, B1...buffer space, 113, 115...exhaust port, 118, 118A, 118B, 180...suction member, 119, 189...suction port, 120, 120A...gas discharge section, B2...buffer space, 121...discharge port, θg...discharge angle, 150...control section.

Claims

1. a substrate holder that holds and rotates the substrate; an exposure unit that irradiates a peripheral area of ​​a surface of the substrate held by the substrate holding unit with light for exposure; an exhaust section that exhausts air from an exhaust range that includes a portion of the outer side of the periphery of the substrate held by the substrate holding section that corresponds to an irradiation position by the exposure section and is set to extend along the periphery.

2. the exhaust section has a plurality of exhaust ports arranged along the periphery and a buffer space for exhaust connected to the plurality of exhaust ports, 2. The peripheral exposure apparatus according to claim 1, wherein the exhaust section exhausts air through the plurality of exhaust ports and the exhaust buffer space.

3. 3. The peripheral exposure apparatus according to claim 2, wherein the exhaust section further comprises a suction member that sucks air from within the exhaust buffer space through a suction port that opens in the exhaust buffer space.

4. the exhaust buffer space extends in a first direction and a second direction along a surface of the substrate held by the substrate holder, the first direction is a direction in which a line extends through a center of the substrate held by the substrate holding unit and a position irradiated by the exposure unit; the second direction is a direction perpendicular to the first direction, 4. The peripheral exposure apparatus according to claim 3, wherein, when viewed from a direction perpendicular to a surface of the substrate held by the substrate holding section, at least a portion of the exhaust buffer space is formed such that its size in the first direction decreases as its distance from the suction port in the second direction increases.

5. the exhaust buffer space extends in a first direction and a second direction along a surface of the substrate held by the substrate holder, the first direction is a direction in which a line extends through a center of the substrate held by the substrate holding unit and a position irradiated by the exposure unit; the second direction is a direction perpendicular to the first direction, 3. The peripheral exposure apparatus according to claim 2, wherein the exhaust buffer space is formed so as to be line-symmetrical with respect to the line when viewed from a direction perpendicular to a surface of the substrate held by the substrate holding unit.

6. the exhaust unit further includes a suction member that sucks air from within the exhaust buffer space through a suction port that opens in the exhaust buffer space, 6. The edge exposure apparatus according to claim 5, wherein the suction ports are arranged on the line when viewed from a direction perpendicular to the surface of the substrate held by the substrate holding unit.

7. 6. The peripheral exposure apparatus according to claim 5, wherein a width of the exhaust buffer space in the second direction is smaller than a width of the substrate in the second direction.

8. the exhaust unit further includes a suction member that sucks air from within the exhaust buffer space through a suction port that opens in the exhaust buffer space, the exhaust buffer space extends in a first direction and a second direction along a surface of the substrate held by the substrate holder, the first direction is a direction in which a line extends through a center of the substrate held by the substrate holding unit and a position irradiated by the exposure unit; the second direction is a direction perpendicular to the first direction, In the second direction, an irradiation position of the exposure unit is set between a first end and a second end of the exhaust buffer space and closer to the first end, The peripheral exposure apparatus according to claim 2 , wherein in the second direction, the suction port is located between the first end and the second end and closer to the second end.

9. a substrate holder that holds and rotates the substrate; an exposure unit that irradiates a peripheral area of ​​a surface of the substrate held by the substrate holding unit with light for exposure; an exhaust unit that exhausts air from at least a portion of the outer side of the periphery of the substrate held by the substrate holding unit that corresponds to a position irradiated by the exposure unit and a region downstream of the portion, when one direction in which the substrate is rotated by the substrate holding unit is used as a reference; a control unit that executes control to emit the exposure light from the exposure unit while rotating the substrate in the one direction by the substrate holding unit while continuing exhaust by the exhaust unit.

10. 10. The peripheral exposure apparatus according to claim 1, further comprising a gas ejection unit that ejects an inert gas from inside a periphery of the substrate held by the substrate holding unit toward between a surface of the substrate held by the substrate holding unit and an opposing portion of the exposure unit that faces the surface of the substrate.

11. 11. The peripheral exposure apparatus according to claim 10, wherein the gas discharge section has a plurality of discharge ports, and a discharge buffer space connected to the plurality of discharge ports.

12. 11. The peripheral exposure apparatus according to claim 10, wherein an angle of a discharge direction of the inert gas from a discharge port of the gas discharge unit with respect to a surface of the substrate held by the substrate holding unit is 5° to 15°.

13. A control unit is further provided, A notch is formed on the periphery of the substrate, The peripheral exposure apparatus according to any one of claims 1 to 8, wherein the control unit controls the exhaust unit so that an exhaust amount during a period in which the exposure light is irradiated from the exposure unit to a predetermined range including the notch portion is greater than an exhaust amount during a period in which the exposure light is irradiated from the exposure unit to a range other than the predetermined range.

14. a gas discharge unit that discharges an inert gas from inside a periphery of the substrate held by the substrate holding unit toward a gap between a surface of the substrate held by the substrate holding unit and a portion of the exposure unit that faces the surface of the substrate; A control unit, A notch is formed on the periphery of the substrate, 9. The peripheral exposure apparatus according to claim 1, wherein the control unit controls the gas discharge unit so that a discharge amount during a period in which the exposure light is irradiated from the exposure unit to a predetermined range including the notch portion is greater than a discharge amount during a period in which the exposure light is irradiated from the exposure unit to a range other than the predetermined range.

15. holding and rotating the substrate by a substrate holder; Irradiating a peripheral area of ​​a surface of the substrate held by the substrate holder with light for exposure; and exhausting air from an exhaust range that is set to extend along an outer periphery of the substrate held by the substrate holding section and that includes a location that corresponds to an irradiation position of the exposure light.

16. holding the substrate by a substrate holder and rotating it in one direction; Irradiating a peripheral area of ​​a surface of the substrate held by the substrate holder with light for exposure; exhausting air from at least a portion of the outer side of the periphery of the substrate held by the substrate holder, the portion corresponding to the irradiation position of the exposure light and a region downstream of the portion, when the one direction is used as a reference; a substrate holder for holding the substrate in the one direction while continuing evacuation by the evacuation unit, and emitting the exposure light toward the peripheral region.

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