Display device

Abstract

To provide a display device in which the variation in threshold voltage of a transistor can be compensated and the variation in luminance can be suppressed, and a driving method using the same.SOLUTION: In a first period, an initial voltage is held in a holding capacitor. In a second period, a voltage based on a video signal voltage and a transistor threshold voltage is held in the holding capacitor. In a third period, the voltage held in the holding capacitor in the second period is applied to a gate electrode of the transistor, so that current is supplied to a light-emitting element to cause the light-emitting element to emit light. By this operation process, current in which the influence from the variation in threshold voltage of the transistor is compensated can be supplied to the light-emitting element and the variation in luminance can be suppressed.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present invention relates to a configuration of a display device having a transistor and a driving method thereof. The configuration of an active matrix display device having thin film transistors and a driving method thereof The present invention also relates to an electronic device that uses such a display device as a display unit. [Background technology]

[0002] In recent years, the so-called self-luminous type, in which pixels are formed from light-emitting elements such as light-emitting diodes (LEDs), has been Display devices have been attracting attention. Light-emitting elements used in such self-luminous display devices include The organic light emitting diode (OLED) Diode, Organic EL element, Electroluminescence (Electro Luminescence) Electroluminescence (EL) elements have been attracting attention, and EL displays, etc. OLEDs and other light-emitting devices are self-emitting, Compared to LCD displays, pixels are more visible, no backlight is required, and response speed is faster. In addition, the luminance of the light-emitting element is controlled by the value of the current flowing therethrough.

[0003] In recent years, a light emitting element and a transistor for controlling the light emission of the light emitting element are provided for each pixel. The development of active matrix display devices that utilize the The display device is capable of high-definition, large-screen display, which is difficult to achieve with passive matrix display devices. Not only that, but it also achieves lower power consumption than passive matrix displays, and It has high reliability and is expected to be put into practical use.

[0004] In an active matrix display device, the pixel driving method is to input a signal When classified by type, there are voltage input type and current input type. The former voltage input type is A video signal (voltage) to be input to the pixel is input to the gate electrode of the driving element, and the driving element The latter current input method uses a set This is a method for controlling the luminance of a light-emitting element by passing a detected signal current through the light-emitting element.

[0005] Here, an example of a pixel configuration in a display device using a voltage input method and a driving method thereof will be described. A brief explanation will be given with reference to FIG. 67. An EL display device will be taken as an example of a typical display device. The following are some of the reasons for this.

[0006] FIG. 67 is a diagram showing an example of a pixel configuration in a display device to which a voltage input method is applied (particularly (See Patent Document 1.) The pixel shown in FIG. 67 has a driving transistor 6701, a switching transistor A transistor 6702, a storage capacitor 6703, a signal line 6704, a scanning line 6705, and a first It has second power lines 6706 and 6707 and a light emitting element 6708 .

[0007] In this specification, when a transistor is on, the gate This refers to the state in which the source voltage exceeds the threshold voltage and current flows between the source and drain. A transistor is off when the gate-source voltage of the transistor is equal to or lower than its threshold voltage. This refers to a state in which the voltage drops below the threshold and no current flows between the source and drain.

[0008] When the potential of the scanning line 6705 changes and the switching transistor 6702 is turned on, The video signal input to the line 6704 is input to the gate electrode of the driving transistor 6701. The potential of the driving transistor 6701 is changed according to the potential of the input video signal. The gate-source voltage is determined, and the voltage between the source and drain of the driving transistor 6701 is This current is supplied to the light emitting element 6708, and the light emitting element 6708 emits light.

[0009] In this way, the voltage input method is a method in which the gate potential of the driving transistor is changed by the potential of the video signal. The source voltage and the current flowing between the source and drain are set, and the light is emitted at a brightness that corresponds to this current. This refers to a method of making optical elements emit light.

[0010] Polysilicon (p-Si) transistors are used as semiconductor elements to drive light-emitting elements. However, polysilicon transistors have a low threshold voltage due to defects at the grain boundaries. Electrical characteristics such as voltage, on-current, and mobility tend to vary. In this case, if the characteristics of the driving transistor 6701 vary from pixel to pixel, When a voltage is input, the magnitude of the drain current of the driving transistor 6701 is Since they are different, the luminance of the light emitting element 6708 varies.

[0011] In addition, in the conventional pixel circuit (Figure 67), the storage capacitor is connected between the gate and source of the driving transistor. However, if this storage capacitor is made of a MOS transistor, the MOS transistor When the gate-source voltage of a MOS transistor becomes approximately equal to the threshold voltage of the MOS transistor, Since a channel region is not induced in the MOS transistor, the MOS transistor will no longer function as a storage capacitor, and as a result, the video signal will no longer be retained correctly. [Prior art documents] [Patent documents]

[0012] [Patent Document 1] JP 2001-147659 A Summary of the Invention [Problem to be solved by the invention]

[0013] In this way, in the conventional voltage input method, the brightness is affected by the variation in the electrical characteristics of the transistors. This results in variation in the degree of

[0014] In view of the above problems, the present invention is capable of compensating for variations in the threshold voltage of transistors. The present invention provides a semiconductor device, a display device, and a driving method thereof, which can reduce luminance variations. The purpose of this document is to

[0015] Note that the present invention is not limited to a semiconductor device or a display device having a light-emitting element. To suppress the variation in drain current caused by the variation in the threshold voltage of a transistor Therefore, the supply destination of the drain current of the driving transistor is limited to the light emitting element. In the following description, the destination to which the drain current is supplied will be collectively referred to as a load. [Means for solving the problem]

[0016] The present invention relates to a semiconductor device having pixels, and the pixels are at least A signal line and a capacitance line are connected to the signal line, and the first electrode is electrically connected to the signal line and the second electrode is connected to the load. A first transistor electrically connected to a second electrode of the first transistor and a gate voltage A second transistor having a function as a switch for selecting whether or not to electrically connect the a first electrode electrically connected to the gate electrode of the first transistor and a second electrode and a storage capacitor electrically connected to the capacitance line, A threshold voltage of the first transistor is calculated from a video signal voltage applied to the gate electrode of the first transistor. and the potential of the first electrode of the first transistor. This is a semiconductor device characterized in that the amount of current flowing through the load is determined by the above-mentioned.

[0017] The present invention relates to a semiconductor device having a pixel, the pixel including at least a signal line, a capacitance line, and A first electrode is electrically connected to a signal line and a second electrode is electrically connected to a load. the second electrode and the gate electrode of the first transistor are electrically connected to each other. a second transistor having a function as a switch for selecting whether or not the first electrode is a first The first electrode is electrically connected to the gate electrode of the transistor, and the second electrode is electrically connected to the capacitance line. a storage capacitor connected to the signal line and a video signal voltage applied to the first transistor A voltage based on the threshold voltage is held in a storage capacitor, and a first transistor is driven in response to the voltage. The semiconductor device is characterized in that it supplies a set current to a load.

[0018] The present invention relates to a semiconductor device having a pixel, the pixel including a signal line, a capacitance line, a power supply line, A first transistor having a function of supplying a current to a load; a second transistor having a function as a switch that electrically connects the electrode and the signal line; A function as a switch that electrically connects a first electrode of the first transistor to a power supply line. and a third transistor electrically connecting the second electrode and the gate electrode of the first transistor. a fourth transistor having a function as a switch for selecting whether to connect the first transistor to the first terminal or not; The second electrode of the transistor in the first embodiment is electrically connected to a load. a fifth transistor having a first electrode electrically connected to the gate electrode of the first transistor; and a storage capacitor whose second electrode is electrically connected to the capacitance line, and a signal is applied to the signal line. A voltage based on the video signal voltage and the threshold voltage of the first transistor is held in a holding capacitor. A current set in the first transistor according to the voltage is supplied to the load from the power supply line. The semiconductor device is characterized by the above.

[0019] The present invention relates to a semiconductor device having a pixel, the pixel including a signal line, a capacitance line, a power supply line, A first transistor having a function of supplying a current to a load; a second transistor having a function as a switch that electrically connects the electrode and the signal line; A function as a switch that electrically connects a first electrode of the first transistor to a power supply line. and a third transistor electrically connecting the second electrode and the gate electrode of the first transistor. a fourth transistor having a function as a switch for selecting whether to connect the first transistor to the first terminal or not; The first electrode is electrically connected to the gate electrode of the first transistor, and the second electrode is connected to the capacitance line. A storage capacitor electrically connected to the signal line is connected to the video signal voltage and the first transistor. A voltage based on the threshold voltage of the transistor is held in the holding capacitance, and a first transistor is generated according to the voltage. A semiconductor device that supplies a current set in a transistor to a load through a power supply line. be.

[0020] In the semiconductor device of the present invention, the pixel further includes a sixth transistor. An initial potential may be applied to the second electrode of the first transistor through the transistor.

[0021] In the semiconductor device of the present invention, the second electrode of the first transistor is The pixel may be electrically connected to a wiring of the pixel via a contact.

[0022] In the semiconductor device of the present invention, the pixel further includes a first transistor through a sixth transistor. The transistor may further include an initialization line electrically connected to the second electrode of the transistor.

[0023] In the semiconductor device of the present invention, other wirings that the pixel has are used as the capacitance lines. It's fine if it is.

[0024] In the semiconductor device of the present invention, each transistor included in a pixel has Among the values ​​of the ratio W / L of the channel length L to the channel width W, the W / L of the first transistor is A maximum value is desirable.

[0025] In the semiconductor device of the present invention, the second transistor and the third transistor are They may be of different conductivity types.

[0026] In the semiconductor device of the present invention, the pixel further includes a plurality of scanning lines. At least two of the transistors have their gate electrodes electrically connected to the same scan line. Good too.

[0027] In the semiconductor device of the present invention, a plurality of scanning lines are further provided, and a plurality of transistors of the pixel are provided. Each of the gate electrodes of the transistor is electrically connected to a different scanning line. This is also fine.

[0028] In the semiconductor device of the present invention, the fourth transistor may be an N-channel type. stomach.

[0029] The present invention relates to a semiconductor device including a signal line, a capacitance line, a power supply line, and a first electrode electrically connected to the signal line, A first transistor having a second electrode electrically connected to a load; The electrode and the gate electrode are electrically connected or not. a second transistor having a first electrode electrically connected to a gate electrode of the first transistor; The pixel includes a storage capacitor whose second electrode is electrically connected to the capacitance line, and the pixel includes a storage capacitor whose second electrode is electrically connected to the capacitance line. A current is passed through the storage capacitor to hold a predetermined initial voltage, and then the second transistor is turned on. In the conductive state, the video signal voltage supplied to the storage capacitor from the signal line and the first transistor A voltage based on the threshold voltage of the first transistor is held, and a voltage based on the voltage is applied to the first transistor. A voltage is applied to the gate electrode of the first transistor, and a current is supplied to the load from the power supply line via the first transistor. The present invention relates to a method for driving a semiconductor device.

[0030] The present invention relates to a semiconductor device including a signal line, a capacitance line, a power supply line, and a first electrode electrically connected to the signal line, A first transistor having a second electrode electrically connected to a load; The electrode and the gate electrode are electrically connected or not. a second transistor for applying an initial potential to the second electrode of the first transistor; a third transistor having a function as a switch; a storage capacitor having a gate electrode electrically connected to the first electrode and a capacitance line; and a pixel including the first transistor, the third transistor being turned on, After applying an initial potential to the second electrode of the storage capacitor, the second transistor is turned on. based on a video signal voltage supplied from a signal line to the first transistor and a threshold voltage of the first transistor. holding a voltage and applying a voltage based on the voltage to a gate electrode of a first transistor; A semiconductor device that supplies a current from a power supply line to a load through a first transistor. This is a driving method for the device.

[0031] In the driving method of the present invention, the first transistor is further connected to the third transistor. The first electrode is electrically connected to the second electrode of the first electrode, and an initial potential is supplied from the initializing line. You may do so.

[0032] In the driving method of the present invention, a video signal voltage and A period during which a voltage based on the threshold voltage of the first transistor is held, and a period other than this period The voltage applied to the power supply line may be different between the first and second power supplies.

[0033] In the above configuration, the load may be a light emitting element.

[0034] Due to the structure of a transistor, it is difficult to distinguish between the source and drain. Depending on the operation of the potential, the potential may be reversed. The source and drain are not particularly specified, but are described as the first electrode and the second electrode. For example, If the electrode is the source, the second electrode is the drain, and vice versa. In the case of a source, the second electrode is referred to as the source.

[0035] In this document (specification, claims, drawings, etc.), one pixel is one Therefore, a color consisting of the color elements R (red), G (green), and B (blue) is In the case of a display device, the smallest unit of an image is made up of three pixels: an R pixel, a G pixel, and a B pixel. The number of color elements is not limited to three, and more than three may be used. Alternatively, colors other than RGB may be used. For example, white (W) may be added to make it RGBW. Also, RGB may be combined with one or more additional colors, such as yellow, cyan, or magenta. Also, for example, a similar color may be added to at least one color in RGB. For example, R, G, B1, B2 may be used. B1 and B2 are both blue. However, the wavelengths are different. By using these color elements, a more realistic display can be achieved. This allows the reduction of power consumption. For each color, multiple regions may be used to control the brightness. In this case, one color element is assigned to one pixel. Each pixel is a pixel, and each region for controlling the brightness is a sub-pixel. When performing this, there are multiple areas for controlling the brightness of each color element, and the gradation is performed across them. Each area that controls the brightness is called a sub-pixel. In this case, one color element is composed of multiple sub-pixels. The size of the area that contributes to the display may differ depending on the color element. In the brightness control area, which is multiple per color, the multiple colors that make up one color element are By supplying slightly different signals to each of the sub-pixels, the viewing angle can be widened. It may be arranged so that the

[0036] In this document (specification, claims, drawings, etc.), a pixel is a matrix. This includes cases where pixels are arranged (distributed) in a matrix. "Lined" refers to being arranged in a straight line in the vertical or horizontal direction. This includes cases where the colors are arranged in a jagged line. For example, For example, when using full color RGB, the display may be arranged in stripes or in three This also includes the case where the dots of the color elements are arranged in a so-called delta arrangement. This also includes cases where the dots of the color elements are arranged in a row. This can reduce power consumption or extend the life of the display element. can be done.

[0037] In addition, the light-emitting element in this document (specification, claims, drawings, etc.) is an element. This refers to an element that can control the luminance of light emitted by changing the amount of current flowing through it. The EL element can be an organic EL element or an inorganic EL element. In addition to EL elements, for example, field emission displays (FE D), a type of FED called SED (Surface-conduction Applying light-emitting elements such as Electron-emitter Displays can be done.

[0038] In addition, as the transistor described in this document (specification, claims, drawings, etc.), In the above, various types of transistors can be used. For example, amorphous silicon, polycrystalline silicon, microcrystalline A thin film having a non-single crystal semiconductor film represented by silicon (also called semi-amorphous) A thin-film transistor (TFT) can be used. There are various advantages to using a thin-film transistor (TFT). For example, it can be manufactured at a lower temperature than single crystal silicon, so the manufacturing cost is It is possible to reduce the cost or increase the size of the manufacturing equipment. This allows a large number of display devices to be manufactured at the same time, resulting in low costs. Furthermore, since the manufacturing temperature is low, substrates with low heat resistance can be used. Therefore, transistors can be fabricated on transparent substrates. The light transmission through the display element can be controlled by using a transistor. Because the film thickness is thin, some of the films that make up the transistor can transmit light. Therefore, the aperture ratio can be improved.

[0039] In addition, when manufacturing polycrystalline silicon, a catalyst (such as nickel) is used to form the crystals. This will further improve the crystallinity and make it possible to manufacture transistors with good electrical characteristics. As a result, the gate driver circuit (scanning line driver circuit) and the source driver circuit (signal line driver circuit) Signal processing circuits (signal generation circuits, gamma correction circuits, DA conversion circuits, etc.) are integrated on the board. It can be achieved.

[0040] In addition, when manufacturing microcrystalline silicon, a catalyst (such as nickel) is used to form the crystal. This makes it possible to further improve the crystallinity and manufacture transistors with good electrical characteristics. In this case, the crystallinity can be improved by simply applying heat treatment without using a laser. As a result, the gate driver circuit (scanning line driving circuit) and part of the source driver circuit (analog Switches, etc.) can be formed integrally on the substrate. Furthermore, a laser is used for crystallization. If no silicon is used, the unevenness of the silicon crystallinity can be suppressed. The image can be displayed.

[0041] However, polycrystalline silicon and microcrystalline silicon are produced without using a catalyst (such as nickel). It is possible.

[0042] Alternatively, a transistor can be formed using a semiconductor substrate, an SOI substrate, or the like. As a result, there is little variation in characteristics, size, and shape, and the current supply capacity is high and the size Using these transistors, the circuit It is possible to achieve low power consumption or high circuit integration.

[0043] Or ZnO, a-InGaZnO, SiGe, GaAs, IZO, ITO, SnO, etc. A transistor having any compound semiconductor or oxide semiconductor, and further, A thin film transistor in which a semiconductor or an oxide semiconductor is thinned can be used. This allows the manufacturing temperature to be lowered, making it possible to manufacture transistors at room temperature, for example. As a result, direct transfer is not possible on substrates with low heat resistance, such as plastic substrates or film substrates. In addition, these compound semiconductors or oxide semiconductors can be used to form a transistor. It can be used not only for the channel part of a transistor, but also for other purposes. For example, these compound semiconductors or oxide semiconductors can be used as resistor elements, pixel electrodes, transparent electrodes, etc. Furthermore, they can be formed or deposited simultaneously with the transistors. This reduces costs.

[0044] Alternatively, a transistor formed by inkjet or printing method can be used. These allow fabrication at room temperature, in a low vacuum, or on a large substrate. In addition, since it is possible to manufacture without using a mask (reticle), The layout of the sta can be easily changed. Furthermore, there is no need to use resist. This reduces the cost of materials and the number of processes. Therefore, this method is less wasteful and less costly than the method of forming a film on the entire surface and then etching it. It can be stocked.

[0045] Alternatively, transistors having organic semiconductors or carbon nanotubes may be used. These features make it possible to form transistors on a flexible substrate. This makes it resistant to impacts.

[0046] Furthermore, transistors of various structures can be used. For example, MOS transistors The present document (specification, claims) The transistors described in the drawings or drawings can be used as MOS type transistors. By using a resistor, the size of the transistor can be reduced. A large number of transistors can be mounted. By using bipolar transistors, This allows a large current to flow, enabling the circuit to operate at high speed.

[0047] In addition, MOS transistors, bipolar transistors, etc. can be mixed and formed on a single substrate. This can achieve low power consumption, compact size, high speed operation, etc. .

[0048] In addition, various other transistors can be used.

[0049] The type of substrate on which the transistor is formed may be of various types. The substrate on which the transistor is formed is not limited to a specific one. Crystal substrate, SOI substrate, glass substrate, quartz substrate, plastic substrate, paper substrate, cellophane Substrate, stone substrate, wood substrate, fabric substrate (natural fibers (silk, cotton, linen), synthetic fibers (nylon, polyester) polyurethane, polyester) or regenerated fibers (acetate, cupra, rayon, regenerated polyester), leather substrate, rubber substrate, stainless steel substrate, stainless Alternatively, a substrate having a stainless steel foil or the like can be used. Skin (skin epidermis, dermis) or subcutaneous tissue may be used as a substrate. A transistor is formed on a substrate, and then the transistor is transferred to another substrate. The substrate on which the transistor is transferred may be a single crystal substrate, an SOI substrate, Glass substrate, quartz substrate, plastic substrate, paper substrate, cellophane substrate, stone substrate, wood Substrate, Fabric Substrate (Natural Fibers (Silk, Cotton, Hemp), Synthetic Fibers (Nylon, Polyurethane, Polyester ter) or recycled fibers (acetate, cupra, rayon, recycled polyester), etc. (including leather substrate, rubber substrate, stainless steel substrate, stainless steel foil, Alternatively, the skin (skin surface, dermis) of an animal such as a human may be used. Alternatively, a transistor may be formed on a substrate, and the substrate may be a subcutaneous tissue. The substrate may be polished to make it thinner. The substrate to be polished may be a single crystal substrate, an SOI substrate, or a gallium nitride substrate. Glass substrate, quartz substrate, plastic substrate, paper substrate, cellophane substrate, stone substrate, wood substrate Boards, fabric substrates (natural fibers (silk, cotton, linen), synthetic fibers (nylon, polyurethane, polyester) Recycled fibers (acetate, cupra, rayon, recycled polyester) (including leather substrate, rubber substrate, stainless steel substrate, stainless steel foil) Alternatively, the skin (skin surface, dermis) of an animal such as a human or the like may be used. Subcutaneous tissue may be used as the substrate. By using these substrates, Formation of transistors, formation of transistors with low power consumption, manufacturing of devices that are not easily damaged, heat resistance It is possible to provide a thinner, lighter, or thinner device.

[0050] In this document (specification, claims, drawings, etc.), Therefore, in the configuration disclosed in the present invention, In addition to the predetermined connection relationship, other elements (e.g., another In addition, a plurality of elements, switches, etc. may be arranged.

[0051] The switches shown in this document (specification, claims, drawings, etc.) may be of various shapes. Examples of the switch include an electrical switch and a mechanical switch. In other words, as long as it can control the flow of electric current, it is not limited to a specific one and can be used in various ways. For example, a transistor or a diode (e.g., P N-diodes, PIN diodes, Schottky diodes, diode-connected transistors It may be a diode (such as a diode), a thyristor, or a logic circuit that combines them. Therefore, when a transistor is used as a switch, the transistor is not a simple switch. Since the transistors operate as switches, the polarity (conductivity type) of the transistors is not particularly limited. If a smaller off-state current is desired, a transistor with a polarity that reduces the off-state current is used. It is desirable to have a transistor with a low off-current that has an LDD region. There are also transistors that operate as switches. The potential of the source terminal of the transistor is close to the low-potential power supply (VSS, GND, 0V, etc.). On the other hand, if the potential of the source terminal is higher than the high potential power supply (such as VDD), use an N-channel type. ) it is preferable to use a P-channel type because the gate This is because the absolute value of the source-to-source voltage can be increased, making it easier to function as a switch. It should be noted that a CMOS switch may be made by using both N-channel and P-channel transistors. When using a CMOS switch, the switch can be either a P-channel or an N-channel type. When the current flows, it can pass current, making it easier to function as a switch. For example, The switch can output an appropriate voltage regardless of whether the input signal voltage is high or low. In addition, the voltage amplitude of the signal for turning the switch on and off can be reduced. This also makes it possible to reduce power consumption.

[0052] In this document (specification, claims, drawings, etc.), On top of or formed on, for example, The description of "on" does not necessarily mean that the object is directly on top of the object. This also includes cases where the two are not included, that is, when there is something else between them. For example, if layer B is formed on top of layer A (or on top of layer A), Layer B is formed directly on top of layer A, and another layer (e.g. layer C) is formed directly on top of layer A. This includes cases where layer B is formed directly on top of layer D. The same applies to the description of "above" and "on something directly attached to it." This is not limited to the case where the two are connected to each other, but also includes the case where another object is sandwiched between them. For example, if layer B is formed above layer A, layer B is directly on top of layer A. In some cases, layer B is formed, and in other cases, another layer (such as layer C or layer D) is formed directly on top of layer A. This includes the case where layer B is formed directly on top of the layer A. The same applies to the cases of "under" or "below" and "directly adjacent". This includes cases where the two are in contact and cases where they are not in contact. Effect of the Invention

[0053] The present invention suppresses the variation in current value caused by the variation in threshold voltage of a transistor. Therefore, it is possible to supply a desired current to a load such as a light emitting element. In particular, when a light-emitting element is used as a load, in the display device of the present invention, a transistor Since the variation in the threshold voltage of the transistor can be compensated for, the current flowing through the light-emitting element is This reduces the variation in luminance of the light-emitting element. This can reduce the noise and improve the image quality of the display device. [Brief description of the drawings]

[0054] [Figure 1] FIG. 1 is a diagram showing an example of a basic configuration of a pixel in a display device of the present invention. [Diagram 2] FIG. 1 is a diagram showing an example of a basic configuration of a pixel in a display device of the present invention. [Diagram 3] FIG. 2 is a diagram showing an example of a pixel configuration in a display device of the present invention. [Figure 4] FIG. 4 is a timing chart for explaining a pixel circuit in a display device of the present invention. [Diagram 5] 3A to 3C are diagrams illustrating the operation of a pixel circuit in a display device of the present invention. [Figure 6] 3A to 3C are diagrams illustrating the operation of a pixel circuit in a display device of the present invention. [Figure 7] 3A to 3C are diagrams illustrating the operation of a pixel circuit in a display device of the present invention. [Figure 8] FIG. 2 is a diagram showing an example of a pixel configuration in a display device of the present invention. [Figure 9] FIG. 4 is a timing chart for explaining a pixel circuit in a display device of the present invention. [Figure 10] FIG. 2 is a diagram showing an example of a pixel configuration in a display device of the present invention. [Figure 11] FIG. 2 is a diagram showing an example of a pixel configuration in a display device of the present invention. [Figure 12] FIG. 2 is a diagram showing an example of a pixel configuration in a display device of the present invention. [Figure 13] FIG. 2 is a diagram showing an example of a pixel configuration in a display device of the present invention. [Figure 14] FIG. 2 is a diagram showing an example of a pixel configuration in a display device of the present invention. [Figure 15] FIG. 2 is a diagram showing an example of a pixel configuration in a display device of the present invention. [Figure 16] FIG. 2 is a diagram showing an example of a pixel configuration in a display device of the present invention. [Figure 17] FIG. 4 is a timing chart for explaining a pixel circuit in a display device of the present invention. [Figure 18] FIG. 2 is a diagram showing an example of a pixel configuration in a display device of the present invention. [Figure 19]FIG. 4 is a timing chart for explaining a pixel circuit in a display device of the present invention. [Figure 20] FIG. 2 is a diagram showing an example of a pixel configuration in a display device of the present invention. [Figure 21] FIG. 2 is a diagram showing an example of a pixel configuration in a display device of the present invention. [Figure 22] FIG. 4 is a timing chart for explaining a pixel circuit in a display device of the present invention. [Diagram 23] FIG. 2 is a diagram showing an example of a pixel configuration in a display device of the present invention. [Figure 24] FIG. 4 is a timing chart for explaining a pixel circuit in a display device of the present invention. [Diagram 25] FIG. 2 is a diagram showing an example of a pixel configuration in a display device of the present invention. [Figure 26] FIG. 4 is a timing chart for explaining a pixel circuit in a display device of the present invention. [Figure 27] 3A to 3C are diagrams illustrating the operation of a pixel circuit in a display device of the present invention. [Figure 28] FIG. 2 is a diagram showing an example of a pixel configuration in a display device of the present invention. [Figure 29] FIG. 2 is a diagram showing an example of a pixel configuration in a display device of the present invention. [Diagram 30] FIG. 2 is a diagram showing an example of a pixel configuration in a display device of the present invention. [Diagram 31] 3A to 3C are diagrams illustrating the operation of a pixel circuit in a display device of the present invention. [Diagram 32] FIG. 2 is a diagram showing an example of a pixel configuration in a display device of the present invention. [Diagram 33] FIG. 2 is a diagram showing an example of a pixel configuration in a display device of the present invention. [Diagram 34] FIG. 4 is a timing chart for explaining a pixel circuit in a display device of the present invention. [Diagram 35] FIG. 2 is a diagram showing an example of a pixel configuration in a display device of the present invention. [Diagram 36] FIG. 2 is a diagram showing an example of a pixel configuration in a display device of the present invention. [Figure 37] FIG. 2 is a diagram showing an example of a layout of a pixel configuration in a display device of the present invention. [Figure 38] FIG. 1 illustrates a configuration example of a display device of the present invention. [Figure 39] FIG. 2 is a diagram showing a configuration example of a scanning line driver circuit in a display device of the present invention. [Diagram 40] FIG. 2 is a diagram showing a configuration example of a signal line driver circuit in a display device of the present invention. [Diagram 41] FIG. 1 illustrates a configuration example of a display device of the present invention. [Diagram 42] FIG. 1 illustrates a configuration example of a display device of the present invention. [Diagram 43] FIG. 1 illustrates a configuration example of a display device of the present invention. [Diagram 44] FIG. 1 is a diagram showing an example of a configuration of a display panel used in a display device of the present invention. [Diagram 45] FIG. 2 is a diagram showing an example of the structure of a light-emitting element used in a display device of the present invention. [Figure 46] FIG. 1 illustrates an example of a configuration of a display device of the present invention. [Figure 47] FIG. 1 illustrates an example of a configuration of a display device of the present invention. [Figure 48] FIG. 1 illustrates an example of a configuration of a display device of the present invention. [Figure 49] FIG. 1 illustrates an example of a configuration of a display device of the present invention. [Figure 50] FIG. 1 illustrates an example of a configuration of a display device of the present invention. [Figure 51] FIG. 1 illustrates an example of a configuration of a display device of the present invention. [Figure 52] FIG. 1 illustrates an example of a configuration of a display device of the present invention. [Figure 53] FIG. 1 illustrates an example of a configuration of a display device of the present invention. [Figure 54] 1A to 1C are diagrams illustrating a structure of a transistor used in a display device of the present invention. [Figure 55] 1A to 1C are diagrams illustrating a method for manufacturing a transistor used in a display device of the present invention. [Figure 56] 1A to 1C are diagrams illustrating a method for manufacturing a transistor used in a display device of the present invention. [Figure 57] 1A to 1C are diagrams illustrating a method for manufacturing a transistor used in a display device of the present invention. [Figure 58]1A to 1C are diagrams illustrating a method for manufacturing a transistor used in a display device of the present invention. [Figure 59] 1A to 1C are diagrams illustrating a method for manufacturing a transistor used in a display device of the present invention. [Figure 60] 1A to 1C are diagrams illustrating a method for manufacturing a transistor used in a display device of the present invention. [Figure 61] FIG. 2 is a diagram showing an example of hardware for controlling a display device of the present invention. [Figure 62] FIG. 1 is a diagram showing an example of an EL module using a display device of the present invention. [Figure 63] FIG. 1 is a diagram showing a configuration example of a display panel using a display device of the present invention. [Figure 64] FIG. 1 is a diagram showing a configuration example of a display panel using a display device of the present invention. [Figure 65] FIG. 1 is a diagram showing an example of an EL television receiver using a display device of the present invention. [Figure 66] 1A to 1C are diagrams illustrating examples of electronic devices to which a display device of the present invention is applied. [Figure 67] FIG. 1 shows a conventional pixel configuration. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0055] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. However, the present invention is not limited to the above-mentioned embodiments, and may be practiced in various different ways without departing from the spirit and scope of the present invention. It will be easily understood by those skilled in the art that the form and details of the present invention may be modified in various ways. Therefore, the present invention should not be construed as being limited to the description of this embodiment mode.

[0056] (Embodiment 1) First, the basic configuration of a pixel circuit in the display device of this embodiment will be described with reference to FIG. In addition, an EL element will be described as an example of the light emitting element.

[0057] FIG. 1 shows a pixel configuration according to the present embodiment, based on a video signal voltage and a threshold voltage of a transistor. FIG. 1 shows a circuit configuration for acquiring a voltage based on the first and second transformers. resistors 101, 102, a storage capacitor 103, a scanning line 104, a signal line 105, a power line 106, It is composed of a capacitance line 107 and a light emitting element 108 .

[0058] In FIG. 1, the first and second transistors 101 and 102 are both P-channel transistors. is.

[0059] The first transistor 101 has a gate electrode connected to a second electrode of the second transistor 102. and a first electrode of the storage capacitor 103, the first electrode of which is connected to a signal line 105; The second electrode is connected to the first electrode of the second transistor 102. The gate electrode of the transistor 102 is connected to the scanning line 104. The second electrode of the light-emitting element is connected to the power supply line 106. is connected to

[0060] Also, the signal line 105 carries a video signal voltage V data is applied to the capacitance line 107. Place V CL The magnitude relationship of the potential is V data >V CL In addition, A power supply potential VSS is applied to the power supply line 106 .

[0061] Here, the first transistor 101 has a function of supplying a current to the light-emitting element 108 . In addition, the second transistor puts the first transistor 101 into a diode-connected state. It functions as a switch.

[0062] In this specification, the term "diode connection" refers to a connection between the gate electrode of a transistor and the first or second This refers to the state in which the two electrodes are connected.

[0063] In the pixel circuit shown in FIG. 1, the second transistor 102 is turned on. The transistor 101 in the first row is in a diode-connected state, and a current flows through the storage capacitor 103. The storage capacitor 103 is charged. The charge of the storage capacitor 103 is The voltage is the video signal voltage V data and the threshold voltage |V th | and Potential V of the 107th line CL Difference with V data -|V th |-V CL This continues until the holding volume The voltage held in the quantity 103 is V data -|V th |-V CL When the first transistor The capacitor 101 is turned off, and no current flows through the storage capacitor 103.

[0064] By the above operation, the video signal voltage V data and the first transistor Threshold voltage of 101 |V th It is possible to hold the voltage based on |.

[0065] In addition, when the first transistor is an N-channel type, the threshold voltage of the first transistor is Figure 2 shows the circuit configuration for acquiring the pressure.

[0066] FIG. 2 shows a first and second transistors 201 and 202, a storage capacitor 203, a scanning line 204, It is composed of a signal line 205 , a power line 206 , a capacitance line 207 , and a light emitting element 208 .

[0067] In addition, in FIG. 2, the second transistor 202 is an N-channel transistor.

[0068] The signal line 205 carries a video signal voltage V data is applied to the capacitance line 207. Place V CL The magnitude relationship of the potential is V CL >V data In addition, A power supply potential VDD is applied to the power supply line 206 .

[0069] In the pixel circuit shown in FIG. 2, the second transistor 202 is turned on. The transistor 201 of No. 1 is in a diode-connected state, and a current flows through the storage capacitor 203. The storage capacitor 203 is charged. The charging of the storage capacitor 203 is performed by The voltage V CL and the video signal voltage V data and the first transistor 20 Threshold voltage of 1 |V th Difference between | and V CL -V data -|V th Continues until | The voltage held in the quantity 203 is V CL -V data -|V th |The first transistor The capacitor 201 is turned off, and no current flows through the storage capacitor 203.

[0070] By the above operation, the video signal voltage V data and the first transistor Threshold voltage of 101 |V th It is possible to hold the voltage based on |.

[0071] In addition, in FIG. 1 and FIG. 2, the second transistor is a diode. It functions as a switch to turn on the state. Therefore, instead of the second transistor, Alternatively, another element having a function as a switch may be used. For example, a diode (e.g. For example, PN diodes, PIN diodes, Schottky diodes, and diode-connected transistors. It can be a transistor, a thyristor, or a logic circuit that combines them. Good too.

[0072] Next, the pixel configuration of this embodiment having the basic circuit configuration shown in FIG. 1 or FIG. In addition, an EL element will be taken as an example of the light emitting element.

[0073] FIG. 3 is a circuit diagram of a pixel circuit according to the present embodiment. The first to fifth transistors 301 to 305, the storage capacitor 306, the signal line 307, the first to fourth running The scan lines 308 to 311, the first and second power supply lines 312 and 313, the capacitance line 314, the light emitting element 3 It consists of 15 etc.

[0074] Here, the first transistor 301 is a transistor that supplies a current to the light-emitting element 316. The second to fifth transistors 302 to 305 are used as a It is used as a switch to select.

[0075] The gate electrode of the first transistor 301 is connected to the second electrode of the fourth transistor 304. and a first electrode of the storage capacitor 306, the first electrode of which is connected to the second transistor 302. and a second electrode of the third transistor 303, A first electrode of the fourth transistor 304 and a first electrode of the fifth transistor 305 The second transistor 302 has a gate electrode connected to a first scanning line 308. The first electrode is connected to a signal line 307. The third transistor 303 has The gate electrode is connected to the second scanning line 309, and the first electrode is connected to the first power supply line 312. The fourth transistor 304 has a gate electrode connected to the third scan line 310. The fifth transistor 305 has a gate electrode connected to the fourth scanning line 311. The second electrode is connected to the first electrode of the light emitting element 315. The second electrode is connected to the capacitor line 314. The light emitting element 315 has a second electrode. is connected to the power supply line 313.

[0076] A power supply potential VDD is applied to the first power supply line 312, and a power supply potential VDD is applied to the second power supply line 313. A power supply potential VSS is applied to the capacitance line 314. CL is applied. Note that the potential The magnitude relationship is VDD>VSS, VDD>V CL Let us assume that.

[0077] In the pixel circuit shown in FIG. 3, the first to fifth transistors 301 to 305 are all P-channel transistors. It is a channel type.

[0078] Note that the first transistor 301 in FIG. 3 corresponds to the first transistor 10 in FIG. 1. Also, the fourth transistor 304 in FIG. 3 corresponds to the second transistor in FIG. 3 corresponds to the transistor 102. The second power supply line 313 in FIG. It corresponds to the power line 106 .

[0079] Next, the operation of the pixel circuit of this embodiment will be described with reference to FIGS.

[0080] FIG. 4 shows a video signal voltage input to a signal line 307 and first to fourth scanning lines 308 to 311. 5 to 7. FIG. 5 shows a timing chart of the voltage and pulse for each operation of the pixel circuit shown in FIG. In total, the period is divided into three periods, the first to third periods T1 to T3.

[0081] 5 to 7 are diagrams showing the connection state of the pixel circuit in each period of the present embodiment. In addition, in FIG. 5 to FIG. 7, the parts indicated by solid lines are conductive, and the parts indicated by dashed lines are conductive. This indicates that it has not been

[0082] First, the operation of the pixel circuit in the first period T1 will be described with reference to FIG. FIG. 1 is a diagram showing a connection state of the pixel circuit in a first period T1. The second to fourth scanning lines 309 to 311 are at the L level, and the third to fifth transistors 303 to The first scanning line 308 goes to H level, and the second transistor 3 As a result, the first transistor 301 becomes diode-connected. As a result, a current flows through the light-emitting element 315. The potential of the first electrode of the storage capacitor 306 drops, and a certain initial voltage is stored in the storage capacitor 306. It will be held.

[0083] By the above operation, a certain initial voltage is held in the storage capacitor 306 during the first period T1. In this specification, this operation is called initialization.

[0084] Next, the operation of the pixel circuit in the second period T2 will be described with reference to FIG. FIG. 13 is a diagram showing a connection state of the pixel circuit in the second period T2. The first and third scanning lines 308 and 310 are at the L level, and the second and fourth transistors 30 2, 304 are turned on. Also, the second and fourth scanning lines 309, 311 are turned to H level. The third and fifth transistors 303 and 305 are turned off. Signal voltage V data This causes the second voltage of the first transistor 301 to The pole is connected to the signal line 307, and the first transistor 301 is diode-connected. This causes a current to flow through the storage capacitor 306, which is then charged. 06 is charged, the voltage held in the holding capacitor 306 becomes the video signal voltage V data and the first Threshold voltage of transistor 301 |V th | and the potential V of the capacitance line 314 CL Difference with V data -|V th |-V CL This continues until the voltage held in the storage capacitor 306 becomes V data - |V th |-V CL When this occurs, the first transistor 301 turns off, and a current flows to the storage capacitor 306. will no longer flow.

[0085] By the above operation, in the second period T2, the video signal voltage V data and the threshold voltage |V th Hold the voltage based on |

[0086] In addition, in the second period T2, the video signal voltage V data and the first tiger Transistor 301 threshold voltage |V th In order to hold the voltage based on |, the first The potential of the second electrode of the transistor 301 is set to the video signal voltage V data and the first transistor Threshold voltage of sta301 |V th Difference between | and V data -|V th Must be lower than | Therefore, by passing a current through the light emitting element 315 in the first period T1, Ensure that the potential of the second electrode of the first transistor 301 is V data -|V th Lower than | This makes it possible to reduce the time required for the threshold voltage to be acquired reliably.

[0087] Next, the operation of the pixel circuit in the third period T3 will be described with reference to FIG. FIG. 13 is a diagram showing a connection state of the pixel circuit in the third period T3. The second and fourth scanning lines 309 and 311 are at the L level, and the third and fifth transistors 30 3, 305 are turned on. Also, the first and third scanning lines 308, 310 are at H level. The second and fourth transistors 302 and 304 are turned off. The second electrode of the first transistor 301 is connected to the first power supply line 312. The gate electrode of 301 is connected to the voltage V held in the holding capacitor 306 during the period T1. data -|V th |-V CL and the potential V of the capacitance line 314 CL With data -|V th | is added Therefore, the gate-source voltage of the first transistor 301 during the period T3 is V gs (T3) Then, V gs (T3) is expressed as the following equation (1).

[0088]

number

[0089] Therefore, the current I flows between the drain and source of the first transistor 301. OLED teeth This current is expressed by the following formula (2), and passes through the fifth transistor 305 to the light emitting element. The light flows to 315, causing the light emitting element 315 to emit light.

[0090]

number

[0091] where β is a constant given by the mobility and size of the transistor, the capacitance of the oxide film, etc. It is.

[0092] By the above operation, in the third period T3, the light emitting element 315 is supplied with the video signal voltage V data To Dependent current I OLED is supplied to cause the light emitting element 315 to emit light.

[0093] In the operation process of the pixel circuit shown in FIG. The functions of the 305 will be explained again.

[0094] The first transistor 301 performs the function of supplying a current to the light-emitting element 315 in the third period T3. Yes.

[0095] The second transistor 302 outputs the video signal voltage V data Input to pixel In order to achieve this, a switch is provided that connects the first electrode of the first transistor 301 to the signal line 307. It functions as a

[0096] The third transistor 303 is connected to the first transistor 30 in the first and third periods T1 and T3. In order to apply the potential of the first power supply line 312 to the first electrode of the first transistor 3 01 and the first power supply line 312.

[0097] The fourth transistor 304 supplies the first transistor 33 to the storage capacitor 306 during the second period T2. 01 threshold voltage |V th A first transistor 301 is connected to the It functions as a switch that puts the

[0098] The fifth transistor 305 supplies a current to the light emitting element 315 during the first and third periods T1 and T3. In the second period T1, the light emitting element 315 is turned on and no current is passed through the light emitting element 315. A second electrode of the first transistor 301 is connected to the second electrode of the first transistor 301 for controlling the supply of current to the photoelement 315. and functions as a switch that connects the first electrode of the light-emitting element 315 to the first electrode of the light-emitting element 315 .

[0099] Through the above-mentioned operation process, the light emitting device 315 receives a current I OLED 3. 15 to current I OLED In this case, the light can be emitted with a brightness according to the equation (2). As described above, the current I OLED is the threshold voltage of the first transistor 301. Value Voltage |V th Since it is expressed in a form that does not depend on |, the variation in the threshold voltage of a transistor can be expressed as can be compensated.

[0100] In addition, in the second period T2, the video signal voltage V data and the threshold voltage of the first transistor 301 Voltage |V th The voltage based on the third period can be held in the holding capacitor 306. In order to turn on the first transistor 301 during the period T3, the video signal voltage V data Example V CL +|V th | <V data ≦VDD.

[0101] In addition, the potential V of the capacitance line 314 CL is the video signal voltage V data and the first transistor 3 01 threshold voltage |V th Difference between | and V data -|V th Any potential lower than | is sufficient. The storage capacitor 306 stores a video signal voltage V data and the threshold voltage of the first transistor 301 Value Voltage |V th In order to reliably hold the voltage based on |, Potential V CL is preferably lower.

[0102] In the pixel circuit shown in FIG. 3, the first transistor 301 is a P-channel type. The first transistor may be an N-channel type. The pixel configuration in the case of a square type is shown in FIG.

[0103] FIG. 8 is a circuit diagram of a pixel circuit according to the present embodiment. 1 to 5 transistors 801 to 805, a storage capacitor 806, a signal line 807, The scan lines 808 to 811, the first and second power supply lines 812 and 813, the capacitance line 814, the light emitting element 8 It consists of 15 parts.

[0104] In the pixel circuit of FIG. 8, the second to fifth transistors 802 to 805 are all N-channel It is based on this model.

[0105] Here, the first transistor 801 is a transistor that supplies a current to the light-emitting element 815. The second to fifth transistors 802 to 805 are used as a It is used as a switch to select.

[0106] The gate electrode of the first transistor 801 is connected to the second electrode of the fourth transistor 804. and a first electrode of a storage capacitor 806, the first electrode of which is connected to a second transistor 802. and a second electrode of the third transistor 803, A first electrode of the fourth transistor 804 and a first electrode of the fifth transistor 805 The second transistor 802 has a gate electrode connected to a first scanning line 808. The first electrode is connected to a signal line 807. The third transistor 803 is The gate electrode is connected to a second scanning line 809, and the first electrode is connected to a first power supply line 812. The fourth transistor 804 has a gate electrode connected to the third scan line 810. The fifth transistor 805 has a gate electrode connected to the fourth scan line 811. The second electrode of the storage capacitor 806 is connected to the second electrode of the light emitting element 815. The second electrode is connected to the capacitor line 814. The light-emitting element 815 has a first electrode and a second electrode. is connected to the power supply line 813.

[0107] A power supply potential VSS is applied to the first power supply line 812, and a power supply potential VSS is applied to the second power supply line 813. A power supply potential VDD is applied to the capacitance line 814. CL is applied. Note that the potential The magnitude relationship is VDD>VSS, V CL >VSS.

[0108] 8 corresponds to the first transistor 20 in FIG. 1. Also, the fourth transistor 804 in FIG. 8 corresponds to the second transistor in FIG. 2. The second power supply line 813 in FIG. It corresponds to the power line 206 .

[0109] Next, the operation of the pixel circuit of this embodiment will be described with reference to FIG.

[0110] FIG. 9 shows a video signal line 807 and first to fourth scanning lines 808 to 811. The first to fifth transistors are all N-channel. Since the timing of the pulses input to the first to fourth scanning lines 808 to 811 has been changed In this regard, when all the transistors are P-channel type (Fig. 4), The L level is inverted. In addition, the first to third periods T1 to T3 are inverted in accordance with the operations of the pixel circuit. It is divided into three periods: T1 and T2.

[0111] The operation of the pixel circuit in FIG. 8 in the first to third periods T1 to T3 is the same as that of the pixel circuit in FIG. That is, in the first period T1, a certain initial voltage is stored in the storage capacitor 806. In other words, initialization is performed. Next, in the second period T2, the video signal is stored in the storage capacitor 806. Voltage V data and the threshold voltage |V th Voltage based on | During the third period T3, the light emitting element 815 is supplied with the video signal voltage V data To Dependent current I OLED is supplied to the light emitting element 815 to cause it to emit light. Current I OLED is expressed by the following equation (3).

[0112]

number

[0113] In addition, in the second period T2, the video signal voltage V data and the first tiger Transistor 801 threshold voltage |V th In order to hold the voltage based on |, the first The potential of the second electrode of the transistor 801 is set to the video signal voltage V data and the first transistor Threshold voltage of STA801 |V th |TonowaV data +|V th Must be higher than | Therefore, by passing a current through the light emitting element 815 in the first period T1, The potential of the second electrode of the first transistor 801 is ensured to be V data +|V th Higher than | This can reduce the time required for obtaining and compensating for the threshold voltage.

[0114] In the operation process of the pixel circuit shown in FIG. The functions of the transistors 05 are the first to fifth transistors in the pixel circuit shown in FIG. It has the same function as the modules 301 to 305.

[0115] Through the above-mentioned operation process, the light emitting element 815 receives a current I OLED 8 15 to current I OLED In this case, the light can be emitted with a brightness according to the equation (3). As described above, the current I OLED is the threshold voltage of the first transistor 801. Value Voltage |V th Since it is expressed in a form that does not depend on |, the variation in the threshold voltage of a transistor can be expressed as can be compensated.

[0116] In addition, in the second period T2, the video signal voltage V data and the threshold voltage of the first transistor 801 Voltage |V th A voltage based on the voltage Vcc can be held in the holding capacitor 806, and the third period In order to turn on the first transistor 801 during the period T3, the video signal voltage V data Example VSS≦V data <V CL -|V th |Let's say.

[0117] In addition, the potential V of the capacitance line 814 CL is the video signal voltage V data and the first transistor 3 01 threshold voltage |V th |TonowaV data +|V th Any potential higher than | is sufficient. The storage capacitor 806 stores a video signal voltage V data and the threshold voltage of the first transistor 801 Value Voltage |V th In order to reliably hold the voltage based on |, Potential V CL The higher the better.

[0118] As described above, the pixel configuration of this embodiment compensates for the variation in the threshold voltage of the transistor. Since the variation in brightness can be reduced, the image quality can be improved.

[0119] In the pixel circuit of this embodiment, as shown in the formulas (2) and (3), Current I OLED is the video signal voltage V data Once the magnitude of is determined, it becomes almost a constant value. Therefore, it is possible to supply a constant current corresponding to the video signal voltage to the light emitting element. Since the light emitting element can emit light at a constant luminance, the luminance during the light emission period (T3) can be Unevenness is reduced.

[0120] In addition, the current I OLED does not depend on the capacitance value of the storage capacitor, so for example, However, due to manufacturing errors such as misalignment of mask patterns during manufacturing, the capacitance value Even if there are variations between pixels, it is possible to supply a constant current to the light emitting element.

[0121] In the pixel circuit of this embodiment, the threshold voltage |V th Get | and the video signal voltage V data By acquiring the above-mentioned signals within the same period, the light emitting element is made to emit light. This allows the preparation time for turning on the LED to be shorter, so the light emission period for one frame period is Therefore, the duty ratio (1 frame period) can be increased. Therefore, the voltage applied to the light emitting element can be reduced. This makes it possible to reduce power consumption and to reduce deterioration of the light emitting element.

[0122] In addition, the preparation time until the light emitting element emits light can be shortened, so The length of the frame period can be made shorter and the frame frequency can be made higher. This makes it possible to reduce false contours and flickering in video displays, improving image quality. It is possible.

[0123] In this embodiment, when the initialization is performed in the period T1, The first electrode is connected to the first power supply line through the third transistor. The first electrode of the first transistor may be connected to another terminal other than the first electrode of the first transistor. The second transistor is connected to the signal line, and the first transistor is turned on. The initialization may be performed by applying a potential such that

[0124] In this embodiment, when a current is supplied to the light emitting element in the period T3, the first transistor The first electrode of the first transistor is connected to the first power supply line through the third transistor. The connection destination of the first electrode of the first transistor is not limited to this. The first electrode is connected to a signal line via a second transistor, and the first electrode is connected to the signal line via a second transistor. A current may be supplied to the light emitting element by applying a potential that turns the transistor on. .

[0125] In this embodiment, the storage capacitor may be made of a metal or a MOS transistor. In particular, when the storage capacitor is formed of a MOS transistor, the storage capacitor can be formed of a metal Since the area occupied by the storage capacitor can be made smaller than that when the pixel opening is formed by You can increase the rate.

[0126] For example, in the pixel circuit shown in FIG. 3, if the storage capacitor is formed of a MOS transistor, Examples are shown in Figures 10 and 11.

[0127] FIG. 10 shows a case where the storage capacitor 306 is formed of a P-channel transistor. When forming a storage capacitor using a P-channel transistor, the P-channel Since it is necessary to induce a channel region in the P-channel transistor, The potential of the gate electrode of the P-channel transistor is set higher than the potentials of the first and second electrodes of the P-channel transistor. In the pixel circuit shown in FIG. In this case, the first electrode has a higher potential than the second electrode. In order to make the P-channel transistor function as a storage capacitor, The first and second electrodes are used as the first electrodes of the storage capacitor 306, and the gate of the first transistor 301 is used as the second electrode of the storage capacitor 306. The P-channel transistor 302 is connected to a second electrode of the fourth transistor 304. The gate electrode of the transistor serves as the second electrode of the storage capacitor 306 and is connected to a capacitor line 314 .

[0128] FIG. 11 shows a case where the storage capacitor 306 is formed of an N-channel transistor. When forming a storage capacitor with an N-channel transistor, the N-channel Since it is necessary to induce a channel region in the N-channel transistor, The potential of the gate electrode of the N-channel transistor is set higher than the potentials of the first and second electrodes of the N-channel transistor. Therefore, the N-channel transistor is used as a storage capacitor. In order to make the N-channel transistor function as a first The gate electrode of the first transistor 301 and the first electrode of the fourth transistor 304 are The first and second electrodes of the N-channel transistor are connected to a storage capacitor. The second electrode of the capacitor 306 is connected to the capacitor line 314 .

[0129] As another example, in the pixel circuit shown in FIG. 8, the first and second storage capacitors are MOS An example in which the transistor is used is shown in FIG. 12 and FIG.

[0130] FIG. 12 shows a case where the storage capacitor 806 is formed of an N-channel transistor. In the case of the pixel circuit shown in FIG. 8, the second electrode of the storage capacitor 806 is larger than the first electrode. Therefore, the N-channel transistor functions as a storage capacitor. In order to achieve this, the first and second electrodes of the N-channel transistor are connected to the first and second electrodes of the storage capacitor 806. The gate electrode of the first transistor 801 and the second electrode of the fourth transistor 804 are The gate electrode of the N-channel transistor is connected to the electrode of the storage capacitor 806. It is used as a second electrode and is connected to a capacitance line 814 .

[0131] FIG. 13 shows a case where the storage capacitor 806 is formed of a P-channel transistor. In order to make the P-channel transistor function as a storage capacitor, The gate electrode of the first transistor 801 is the first electrode of the storage capacitor 806. The second electrode of the fourth transistor 804 is connected to the first electrode of the fourth transistor 804. The first and second electrodes of the transistor are used as the second electrodes of the storage capacitor 806 and are connected to the capacitor line 814. do.

[0132] As in this embodiment, the storage capacitor is connected between the gate electrode of the first transistor and the capacitance line. In particular, when the storage capacitor is formed of a MOS transistor, the MOS transistor A voltage greater than the threshold voltage of the MOS transistor is always applied between the gate and source of the MOS transistor. Therefore, the channel region can be constantly induced in the MOS transistor, and the current is always maintained. Therefore, during the operation of the pixel circuit, This makes it possible to accurately maintain a desired voltage.

[0133] In the pixel configuration of this embodiment, the first to fifth transistors each have Among the values ​​of the ratio W / L of the channel length L to the channel width W, the W / L of the first transistor is When the value is maximized, the current flowing between the drain and source of the first transistor is This allows the video signal voltage V data and Threshold voltage of transistor 1 |V th When obtaining a voltage based on |, the larger Since the movement can be performed by the flow, the movement can be performed more quickly. The current I flows through the light-emitting element during T3. OLED can be made larger, resulting in higher brightness. It becomes possible to do so.

[0134] In this embodiment, the timing of the pulses input to the second and fourth scanning lines is Since the third transistor and the fifth transistor are the same, The control may be performed using either one of the four scanning lines.

[0135] For example, in the pixel circuit shown in FIG. An example of control by the second scanning line 309 is shown in FIG. The gate electrode of the first transistor 303 and the gate electrode of the fifth transistor 305 are 2 is connected to scan line 309.

[0136] As another example, in the pixel circuit shown in FIG. 15 shows an example in which the fourth scanning line 811 controls the first and second scanning lines 805 and 805. In FIG. 5, the gate electrode of the third transistor 803 and the gate electrode of the fifth transistor 805 are The gate electrode is connected to the fourth scan line 811 .

[0137] In this way, by controlling the third and fifth transistors with the same scan line, This allows the number of lines to be reduced, thereby increasing the aperture ratio of the pixel.

[0138] In this embodiment, the second to fifth transistors are all P-channel type, or In the past, transistors were of the same conductivity type, i.e., N-channel type, but this is not limited to this. The circuit may be configured using both P-channel and N-channel types.

[0139] For example, in FIG. 3, the fourth transistor 304 is an N-channel type. The transistors other than the transistor 304 may be of the P-channel type. This pixel circuit is shown in FIG. In addition, the video signals input to the signal line 307 and the first to fourth scanning lines 308 to 311 A timing chart of the voltages and pulses is shown in FIG.

[0140] In this way, if the fourth transistor 304 is an N-channel type, Since the leakage current at 04 is smaller than that of a P-channel transistor, the retention capacitance 3 The leakage of the charge held in the storage capacitor 306 is reduced, and the fluctuation of the voltage held in the storage capacitor 306 is reduced. As a result, especially during the light emission period (T3), Since a constant voltage is always applied to the electrodes, a constant current can be supplied to the light emitting element 315. As a result, the light emitting element 315 can emit light with a constant luminance, and uneven luminance can be reduced. It can be reduced.

[0141] As another example, in FIG. 3, the second transistor 302 is an N-channel type. The transistors other than the transistor 302 in the second pixel circuit may be of the P-channel type. 18. The signals input to the signal line 307 and the first to fourth scanning lines 308 to 311 are shown in FIG. FIG. 19 shows a timing chart of the video signal voltage and pulses.

[0142] In this way, when the second transistor 302 is an N-channel type, the first scanning line 308 and The timing of the pulses input to the second scanning line 309 and the fourth scanning line 311 is the same. Therefore, the second transistor 302, the third transistor 303, and the fifth transistor 3 05 of the first scanning line 308, the second scanning line 309, or the fourth scanning line 311. It can be controlled by any one of the scan lines.

[0143] Here, the second transistor 302, the third transistor 303, and the fifth transistor 3 FIG. 20 shows an example of controlling the first scanning line 308. the gate electrode of the second transistor 302, the gate electrode of the third transistor 303, The gate electrodes of the first and fifth transistors 305 are connected to a first scan line 308 .

[0144] In this way, the second transistor is different from the transistors other than the second transistor. By using a conductive type, the number of scanning lines can be reduced, and the aperture ratio of the pixels can be increased. This can be done.

[0145] In addition, which of the second to fifth transistors has which conductivity type is The above is not intended to be limiting.

[0146] This embodiment is a case where the contents (or even a part) described in the other embodiments are embodied. An example of a case where it is slightly modified, an example of a case where it is partially changed, an example of a case where it is improved, Examples of detailed descriptions, examples of applications, examples of related parts, etc. Therefore, the contents described in the other embodiments may be applied or combined with this embodiment. The terms may be freely combined or substituted.

[0147] In this embodiment, various figures have been used to explain the present invention. (or a part of) the contents described in another figure (or a part of) Furthermore, in the figures described above, Each part can be combined with other parts to create more figures. It is possible to do this.

[0148] Similarly, the contents (or even a part) described in each drawing of this embodiment may be applied to the drawings of other embodiments. Please feel free to apply, combine, or replace the contents (or any part) of the above. Furthermore, in the drawings of this embodiment, each part may be represented as a different embodiment. By combining parts of the form, even more figures can be constructed.

[0149] (Embodiment 2) In the first embodiment, a separate capacitance line is provided, but other existing wiring can be used instead of the capacitance line. For example, any one of the first to fourth scanning lines of the pixels in the other rows may be used as a capacitance line. By using it as a substitute for the capacitance line of the pixel, it is possible to eliminate the capacitance line of the pixel. In this embodiment, the first to fourth capacitance lines of the pixels in the other rows are used instead of the capacitance lines of the pixel. The case where any one of the fourth scanning lines is used will be described. An explanation will be given using the L element as an example.

[0150] For example, in the pixel circuit shown in FIG. 3, instead of the capacitance line of the pixel, FIG. 21 shows an example of a pixel circuit when the second scanning line of the pixel is used.

[0151] FIG. 21 shows a pixel Pixel(i) in a certain row i and a pixel in the previous row (i-1). The configuration of pixel Pixel(i-1) in the (i-1)th row is shown. ) are the first to fifth transistors 2101 to 2105, the storage capacitor 2106, the first to fourth It is composed of scanning lines 2108 to 2111, a light emitting element 2115, etc. The pixel Pixel(i) includes first to fifth transistors 2121 to 2125 and a storage capacitor 21 26, first to fourth scanning lines 2128 to 2131, a light emitting element 2135, etc. In addition, the pixel Pixel(i) in the i-th row and the pixel Pixel(i-1) in the (i-1)-th row are Thus, the signal line 2107 and the first and second power supply lines 2112 and 2113 are shared.

[0152] In FIG. 21, the connections of the elements in each pixel are almost the same as those in the pixel circuit shown in FIG. The difference between FIG. 3 and FIG. 21 is that the pixel Pixel(i) in the i-th row Instead of the capacitance line, the second scanning line 2109 of the pixel Pixel(i-1) in the (i-1)th row The second electrode of the storage capacitor 2126 of the pixel Pixel(i) in the i-th row is , connected to the second scanning line 2109 of the pixel Pixel(i-1) in the (i-1)th row. It is a point.

[0153] In addition, in the pixel Pixel(i-1) in the (i-1)th row, Instead of the capacitance line l(i-1), the second The scanning line 2149 is used, and the storage capacitor 21 The second electrode of pixel Pixel(i-2) in the (i-2)th row is connected to the second scanning line 214 It is connected to 9.

[0154] Here, the signal line 2107 and the first to fourth pixels of the pixel Pixel(i-1) in the (i-1)th row and the first to fourth scanning lines of the pixel Pixel(i) in the i-th row. FIG. 2 shows a timing chart of the video signal voltage and pulses input to 2128 to 2131. The periods T1 to T3 shown in FIG. 22 are the periods of motion of the pixel Pixel(i) in the i-th row. This corresponds to the work.

[0155] In the pixel configuration shown in FIG. 21, the storage capacitor 212 of the pixel Pixel(i) in the i-th row The second electrode of the sixth row is connected to the second scanning line 210 of the pixel Pixel(i-1) in the (i-1)th row. Therefore, the potential applied to the pixel Pixel(i) in the i-th row is A potential of H level is applied to the second electrode of the capacitor 2126 during the period T1, and during the periods T2 and T3 In each period, an L level potential is applied to the pixel in the i-th row. Since a constant potential can be applied to the second electrode of the storage capacitor 2126, The pixel circuit can operate as described in the first embodiment.

[0156] In FIG. 21, the first capacitance line of the pixel in the previous row is used instead of the capacitance line of the pixel in question. The same operation as above can be performed using 4 scan lines. The timing of the pulses input to the second and fourth scanning lines of the first pixel Pixel(i-1) is This is because the timing is the same.

[0157] The scanning line used in place of the capacitance line of the pixel is the second capacitance line of the pixel in the previous row. Alternatively, the fourth scanning line may be used instead of the capacitance line of the pixel in question. Alternatively, the first or third scanning line of the pixel in the next row may be used. Any one of the fourth scan lines may be used.

[0158] In addition, in the pixel, a constant potential is applied to the capacitance line during periods T2 and T3. It is preferable that a low potential be applied to the capacitance line during periods T2 and T3. In this way, the threshold voltage of the first transistor and the video signal voltage can be obtained more easily. This can be done accurately, and the current flowing through the light emitting element during the light emitting period of the pixel can be made constant. This allows the light emitting element to emit light at a constant luminance. In other words, instead of the capacitance line of the pixel, the second or fourth capacitance line of the pixel in the previous row is used. It is preferable to use scan lines of 100 MHz or less.

[0159] As another example, in the pixel circuit shown in FIG. 8, instead of the capacitance line of the pixel, FIG. 23 shows an example in which the second scanning line of the pixels in the previous row is used.

[0160] FIG. 23 shows a pixel Pixel(i) in a certain row i and a pixel in the previous row (i-1). The configuration of pixel Pixel(i-1) in the (i-1)th row is shown. ) are the first to fifth transistors 2301 to 2305, the storage capacitor 2306, the first to fourth It is composed of scanning lines 2308 to 2311, a light emitting element 2315, etc. The pixel Pixel(i) includes first to fifth transistors 2321 to 2325 and a storage capacitor 23 26, first to fourth scanning lines 2328 to 2331, a light emitting element 2335, etc. In addition, the pixel Pixel(i) in the i-th row and the pixel Pixel(i-1) in the (i-1)-th row are Thus, a signal line 2307 and first and second power supply lines 2312 and 2313 are shared.

[0161] In FIG. 23, the connections of the elements in each pixel are almost the same as those in the pixel circuit shown in FIG. The difference between FIG. 8 and FIG. 23 is that the pixel Pixel(i) in the i-th row Instead of the capacitance line, the second scanning line 2309 of the pixel Pixel(i-1) in the (i-1)th row The second electrode of the storage capacitor 2326 of the pixel Pixel(i) in the i-th row is , connected to the second scanning line 2309 of the pixel Pixel(i-1) in the (i-1)th row. It is a point.

[0162] In addition, in the pixel Pixel(i-1) in the (i-1)th row, Instead of the capacitance line l(i-1), the second The scanning line 2349 is used, and the storage capacitor 23 The second electrode of pixel Pixel(i-2) in the (i-2)th row is connected to the second scanning line 234 It is connected to 9.

[0163] Here, the signal line 2307 and the first to fourth pixels of the pixel Pixel(i-1) in the (i-1)th row and the first to fourth scanning lines of the pixel Pixel(i) in the i-th row. The timing chart of the video signal voltage and pulse input to 2328 to 2331 is shown in FIG. 24. Note that the periods T1 to T3 shown in FIG. 24 are the time periods for the motion of the pixel Pixel(i) in the i-th row. This corresponds to the work.

[0164] In the pixel configuration shown in FIG. 23, the storage capacitor 232 of the pixel Pixel(i) in the i-th row The second electrode of the sixth row is connected to the second scanning line 230 of the pixel Pixel(i-1) in the (i-1)th row. Therefore, the potential applied to the pixel Pixel(i) in the i-th row is A potential of the L level is applied to the second electrode of the capacitor 2326 during the period T1, and during the periods T2 and T3 In each period, a high-level potential is applied to the pixel in the i-th row. Since a constant potential can be applied to the second electrode of the storage capacitor 2326, The pixel circuit can operate as described in the first embodiment.

[0165] In FIG. 23, the first capacitance line of the pixel in the previous row is used instead of the capacitance line of the pixel in question. The same operation as above can be performed using 4 scan lines. The timing of the pulses input to the second and fourth scanning lines of the first pixel Pixel(i-1) is This is because the timing is the same.

[0166] The scanning line used in place of the capacitance line of the pixel is the second capacitance line of the pixel in the previous row. Alternatively, the fourth scanning line may be used instead of the capacitance line of the pixel in question. Alternatively, the first or third scanning line of the pixel in the next row may be used. Any one of the fourth scan lines may be used.

[0167] In addition, in the pixel, a constant potential is applied to the capacitance line during periods T2 and T3. It is also desirable that a high potential be applied to the capacitance line during periods T2 and T3. In this way, the threshold voltage of the first transistor and the video signal voltage can be obtained more easily. This can be done accurately, and the current flowing through the light emitting element during the light emitting period of the pixel can be made constant. This allows the light emitting element to emit light at a constant luminance. In other words, instead of the capacitance line of the pixel, the second or fourth capacitance line of the pixel in the previous row is used. It is preferable to use scan lines of 100 MHz or less.

[0168] In this way, the second scanning line of the pixel in the previous row is used instead of the capacitance line of the pixel. By using the above, it is not necessary to provide a new capacitance line to the pixel, so the number of wirings can be reduced. This can reduce the voltage applied to the capacitance line, thereby increasing the aperture ratio of the pixel. Since it is no longer necessary to generate a new , and power consumption can also be reduced.

[0169] This embodiment is a case where the contents (or even a part) described in the other embodiments are embodied. An example of a case where it is slightly modified, an example of a case where it is partially changed, an example of a case where it is improved, Examples of detailed descriptions, examples of applications, examples of related parts, etc. Therefore, the contents described in the other embodiments may be applied or combined with this embodiment. The terms may be freely combined or substituted.

[0170] In this embodiment, various figures have been used to explain the present invention. (or a part of) the contents described in another figure (or a part of) Furthermore, in the figures described above, Each part can be combined with other parts to create more figures. It is possible to do this.

[0171] Similarly, the contents (or even a part) described in each drawing of this embodiment may be applied to the drawings of other embodiments. Please feel free to apply, combine, or replace the contents (or any part) of the above. Furthermore, in the drawings of this embodiment, each part may be represented as a different embodiment. By combining parts of the form, even more figures can be constructed.

[0172] (Embodiment 3) In the first and second embodiments, a current is passed through the light emitting element when the initialization is performed. However, by adding a new initialization transistor to the pixel circuit shown so far, In this embodiment, the initialization is performed by using an initialization transistor. A method for synchronizing the light emitting element will be described. Note that the explanation will be given by taking an EL element as an example of the light emitting element. do.

[0173] To perform the initialization, the second electrode of the first transistor must be set to a certain initial potential. At this time, the second electrode of the first transistor and the electrode of another element or another wiring The line is connected to the power supply via an initialization transistor, and the initialization transistor is turned on. As a result, the second electrode of the first transistor is connected to a potential of an electrode or wiring to which the second electrode is connected. It can be set.

[0174] That is, the initialization transistor sets the potential of the second electrode of the first transistor to a certain initial potential. In order to set the position, the second electrode of the first transistor and the electrode of another element or other arrangement It functions as a switch that connects the lines.

[0175] For example, in the case of the pixel circuit shown in FIG. 3, a video signal voltage V data and Threshold voltage of the first transistor 301 |V th In order to maintain the voltage based on Therefore, the potential of the second electrode of the first transistor 301 is set to the video signal voltage V data and No. 1 The threshold voltage of the transistor 301 |V th Difference between | and V data -|V th Lower than | Therefore, in the first period T1, the second transistor 301 The electrode of the element is connected to the electrode of another element or to another wiring via an initialization transistor. As a result, the potential of the second electrode of the first transistor 301 is V data -|V th | The initial voltage can be set to a low level.

[0176] FIG. 25 shows an example in which an initialization transistor is provided in the pixel circuit shown in FIG. FIG. 25 shows a state in which the second electrode of the first transistor 301 and the capacitance line 314 are connected to an initialization transistor. This is an example of connection via a transistor.

[0177] In FIG. 25, a sixth transistor, which is an initialization transistor, is added to the pixel circuit shown in FIG. A sixth transistor 2516 and a fifth scan line 2517 are added. The gate electrode of the sixth transistor is connected to the fifth scanning line 2517, and the first electrode of the sixth transistor is connected to the fifth scanning line 2517. a second electrode of the fourth transistor 301, a first electrode of the fifth transistor 302, The first electrode of the transistor 305 is connected to the capacitance line 314. .

[0178] Next, the operation of the pixel circuit shown in FIG. 25 will be described with reference to FIGS.

[0179] FIG. 26 shows the inputs to the signal line 307 and the first to fifth scanning lines 308 to 311 and 2517. The timing chart of the video signal voltage and pulse is shown, and corresponds to each operation of the pixel circuit. The period is divided into three periods, T1 to T3.

[0180] The operation of the pixel circuit in the first period T1 will be described with reference to FIG. The second, third and fifth scanning lines 309, 310 and 2517 are at the L level, and the third and fourth The sixth transistors 303, 304, and 2516 are turned on. The lines 308 and 311 are at H level, and the second and fifth transistors 302 and 305 are turned off. As a result, the second electrode of the first transistor 302 and the capacitance line 314 are connected. Therefore, the second electrode of the first transistor 301 and the first electrode of the first storage capacitor 306 , and the potential of the first electrode of the storage capacitor 306 is V CL is equal to

[0181] By the above operation, in the period T1, the second electrode of the first transistor 301 and the storage capacitor The potential of the first electrode of the capacitance 306 is set as an initial potential, and the potential V of the capacitance line 314 is set as CL Set to .

[0182] In this manner, in the period T1, the potential of the second electrode of the first transistor 301 is set to V data -|V th The potential V of the capacitance line 314, which is lower than CL By setting 1, the potential of the second electrode of the transistor 301 is V data -|V th Lower than | This makes it possible to reliably compensate the threshold voltage.

[0183] In the periods T2 and T3, the fifth scanning line 2517 is set to the H level, and the sixth The resistor 2516 is turned off. Then, the same operation as that of the pixel circuit shown in FIG. During the period T2, the storage capacitor 306 stores the video signal voltage V data and the first transistor 3 01 threshold voltage |V th In the period T3, the light-emitting element Video signal voltage to 315 V data The current I depends on OLED 315 to emit light.

[0184] In addition, the sixth transistor 2516 is a transistor in which the second electrode of the first transistor 301 is V d ata -|V th For example, the potential of the GND is set to be lower than that of the GND. As shown in FIG. 1, the first electrode of the sixth transistor 2516 is connected to the first transistor 301. a gate electrode of the fourth transistor 304, a second electrode of the fourth transistor 304, and a first electrode of the storage capacitor 306 The electrode may be connected to the

[0185] In addition, in FIG. 25, the second electrode of the sixth transistor 2516 is connected to the capacitance line 314. However, even if the second electrode of the sixth transistor 2516 is connected to an existing wiring other than the capacitance line, In particular, during the period T1, V data -|V th A potential lower than | is applied. Any wiring that can be used is acceptable.

[0186] For example, as shown in FIG. 29, the second electrode of the sixth transistor 2516 is connected to the second scanning In the period T1, the second scanning line 309 is applied with a potential of L level. Therefore, the potential of the second electrode of the first transistor 301 is set to V data -|V th | It is possible to set the potential lower than

[0187] In addition, in the period T1, the L level potential is also applied to the third scanning line 310. The second electrode of the sixth transistor 2516 may be connected to the third scan line 310 .

[0188] In addition, in order to set the second electrode of the first transistor 301 to a certain initial potential, An initialization line (initialization power supply line) may be provided.

[0189] For example, an example in which an initialization transistor and an initialization line are provided in the pixel circuit shown in FIG. In FIG. 30, a new initialization transistor, A sixth transistor 2516, a fifth scan line 2517, and an initialization line 3018 are added. The gate electrode of the sixth transistor 2516 is connected to the fifth scan line 2517. , the first electrode is connected to the second electrode of the first transistor 301 and the fourth transistor 30 4 and a first electrode of a fifth transistor 305, and a second electrode of , and is connected to the initialization line 3018.

[0190] The initialization line 3018 is supplied with an initialization potential V ini The magnitude relationship of the potential is V ini <V data -|V th |Let's say.

[0191] The operation of the pixel circuit shown in FIG. 30 in the first period T1 is shown in FIG. The transistor 301 of 1 is in a diode-connected state, and a current flows through the initialization line 3018. As a result, the second electrode of the first transistor 301 and the first electrode of the storage capacitor 306 The potential of the electrode becomes equal to the potential of the initialization line 3018, and the storage capacitor 306 is supplied with the initialization potential V in i and the potential V of the capacitance line 314 CL Difference with V ini -V CL is retained.

[0192] By the above operation, in the period T1, the storage capacitor 306 is set to an initial voltage by the initialization line 3018. potential V ini and the potential V of the capacitance line 314 CL Difference with V ini -V CL Hold.

[0193] In this way, the initialization line 3018 is provided to set the potential of the second electrode of the first transistor 301 to , V data -|V th The initialization potential V ini By setting This ensures that the potential of the second electrode of the first transistor 301 is V data -|V th | It is also possible to lower the threshold voltage, thereby ensuring compensation of the threshold voltage.

[0194] In particular, by providing a new initialization line, the initialization potential V ini V data -|V th Therefore, the second potential of the first transistor 301 can be set to any potential lower than | The potential of the electrodes is more reliably V data -|V th can be lower than the threshold voltage | This will allow compensation to be provided more reliably.

[0195] In addition, the sixth transistor 2516 is a transistor in which the second electrode of the first transistor 301 is initially potential V ini For example, as shown in FIG. The first electrode of the transistor 2516 is connected to the gate electrode of the first transistor 301, The second electrode of the fourth transistor 304 and the first electrode of the storage capacitor 306 are connected to good.

[0196] In this way, by adding a new initialization transistor and initialization line, This makes it possible to more reliably obtain and compensate the threshold voltage of the first transistor. become.

[0197] In the initialization method described in the first embodiment, the light-emitting element is Since a current flows, the light emitting element emits light during the period T1. During the initialization, no current flows through the light emitting element, so the light emitting element emits light during the period T1. Therefore, light emission from the light emitting element can be suppressed outside the light emitting period.

[0198] In this embodiment, the sixth transistor, which is the initialization transistor, is a P-channel transistor. However, the present invention is not limited to this, and an N-channel type may also be used.

[0199] In this embodiment, the sixth transistor is controlled using the fifth scanning line. Instead of the scanning lines, other existing wirings of the pixels in other rows may be used. In the period T1, a wiring is used to apply a voltage that turns on the sixth transistor. For example, if the sixth transistor is a P-channel type, the fifth transistor of the pixel Instead of the scan line of the first row, the first scan line of the pixel of the previous row may be used. If the pixel is an N-channel type, the second scan line of the pixel in the previous row is used instead of the fifth scan line of the pixel. In this way, by using the existing wiring instead of the fifth scan line, This eliminates the need to provide a fifth scan line for the pixel, reducing the number of lines. This makes it possible to increase the aperture ratio of the pixel.

[0200] In this embodiment, in the case where the first transistor is a P-channel type (FIG. 3), Although only the examples have been described, the contents of this embodiment can be applied to a first pixel circuit such as the pixel circuit shown in FIG. The same can be applied to the case where the transistor is an N-channel type.

[0201] When an initialization transistor is added to the pixel circuit shown in FIG. The potential of the second electrode of the capacitor 801 is the video signal voltage V data and the first transistor 801 Threshold voltage |V th |TonowaV data +|V th so that it is set to a higher potential than | When an initialization line is added, the potential V ini V da ta +|V th Set to a higher potential than |.

[0202] This embodiment is a case where the contents (or even a part) described in the other embodiments are embodied. An example of a case where it is slightly modified, an example of a case where it is partially changed, an example of a case where it is improved, Examples of detailed descriptions, examples of applications, examples of related parts, etc. Therefore, the contents described in the other embodiments may be applied or combined with this embodiment. The terms may be freely combined or substituted.

[0203] In this embodiment, various figures have been used to explain the present invention. (or a part of) the contents described in another figure (or a part of) Furthermore, in the figures described above, Each part can be combined with other parts to create more figures. It is possible to do this.

[0204] Similarly, the contents (or even a part) described in each drawing of this embodiment may be applied to the drawings of other embodiments. Please feel free to apply, combine, or replace the contents (or any part) of the above. Furthermore, in the drawings of this embodiment, each part may be represented as a different embodiment. By combining parts of the form, even more figures can be constructed.

[0205] (Embodiment 4) In the first to third embodiments, the potential of the second power supply line is a fixed potential. The potential of the second power supply line may be changed depending on the fourth period. The case where the potential of the second power supply line is changed depending on the period of time is described. An EL element will be taken as an example for explanation.

[0206] For example, in the pixel circuit shown in FIG. 3, in the second period T2, the fifth transistor 30 5 is turned off to prevent current from flowing through the light emitting element 315. The fifth transistor 305 is removed, and the second electrode of the first transistor 301 and the light emitting The first electrode of the element 315 is directly connected, and the potential of the second power supply line 313 is The potential of the first electrode of the light emitting element 315 is made higher than the potential of the first electrode of the light emitting element 315, so that a current flows through the light emitting element 315. This is because the potential of the second power line 313 is not applied to the light emitting element 315. By making the potential of the first electrode higher than that of the second electrode, a reverse bias is applied to the light emitting element 315. An example of this case is shown in Figures 33 and 34.

[0207] In FIG. 33, the second electrode of the first transistor 301 is It is directly connected to the first electrode of the light emitting element 316. Also, FIG. The video signal voltages input to the first to third scanning lines 308 to 310 and the second power supply line 313 and The timing chart of the first to third scanning lines 308 to 310 is shown. The timing of the pulses input to is the same as that of the pixel circuit shown in FIG.

[0208] In the second period T2, the potential of the second power supply line 313 is set to the video signal voltage V data and the first Threshold voltage of transistor 301 |V th Difference between | and V data -|V th |To do more than This allows a reverse bias to be applied to the light emitting element 315. In 2, no current can flow through the light emitting element 315.

[0209] In the first and third periods T1 and T3, the potential of the second power supply line 313 is set to the video signal potential. Pressure V data and the threshold voltage |V th Difference between | and V data -|V thBy making the voltage lower than 1 V, a forward bias can be applied to the light emitting element 315. This allows current to flow through the light emitting element 315 during periods T1 and T3.

[0210] As a method of initialization, the initialization transistor described in the third embodiment is used. An example of this case is shown in FIG.

[0211] The pixel circuit shown in FIG. 35 is an example in which initialization is performed using an initialization transistor. In the figure (FIG. 25), the fifth transistor 305 and the fourth scan line 311 are removed. The second electrode of the first transistor 301 and the first electrode of the light-emitting element 315 are connected to each other. In this case, in the period T1, the potential of the second power supply line 313 is set to the potential of the first transistor 301. By making the potential of the second electrode higher, the light emitting element 315 can be initialized without passing a current therethrough. It will be possible to do so.

[0212] As a method of initialization, the initialization transistor and the initialization line described in the third embodiment are used. An example of this case is shown in FIG.

[0213] In the pixel circuit shown in FIG. 36, initialization is performed using an initialization transistor and an initialization line. In the example shown in FIG. 30, the fifth transistor 305 and the fourth scanning line 31 1 is removed, and the second electrode of the first transistor 301 and the first electrode of the light-emitting element 315 are In this case, during the period T1, the potential of the second power supply line 313 is set to the initialization potential V in i By doing so, it is possible to perform initialization without passing a current through the light emitting element 315. do.

[0214] In this embodiment, in the case where the first transistor is a P-channel type (FIG. 3), Although only the examples have been described, the contents of this embodiment can be applied to a first pixel circuit such as the pixel circuit shown in FIG. The same can be applied to the case where the transistor is an N-channel type.

[0215] In the pixel circuit shown in FIG. 8, when the potential of the second power supply line 813 is changed depending on the period, In a period T2, the potential of the second power line 813 is set lower than the potential of the second electrode of the light-emitting element 815. By increasing the voltage, a reverse bias can be applied to the light emitting element 815. This makes it possible to stop current from flowing to the light emitting element 815 during the period T2.

[0216] In the period T2, the potential of the second power supply line 813 is set to the video signal voltage V data and the first Threshold voltage of transistor 801 |V th |TonowaV data +|V th |To do the following This allows the above operations to be performed.

[0217] In the first and third periods T1 and T3, the potential of the second power supply line 813 is set to the video signal potential. Pressure V data and the threshold voltage |V th |TonowaV data +|V th By making the voltage higher than |, a forward bias can be applied to the light emitting element 815. This allows current to flow through the light emitting element 815 during the periods T1 and T3.

[0218] As a method of initialization, the initialization transistor described in the third embodiment is used. In this case, in the period T1, the potential of the second power supply line 813 is set to the first The potential of the second electrode of the transistor 801 in the first embodiment is made lower than that of the light-emitting element 815 in the second embodiment. This makes it possible to perform initialization without passing a current through the memory cell.

[0219] As a method of initialization, the initialization transistor and the initialization line described in the third embodiment are used. In this case, in the period T1, the second power line 813 may be used for initialization. The potential of the initial potential V ini By setting the following, it is possible to initially turn on the light emitting element 815 without passing a current therethrough. This makes it possible to perform initialization.

[0220] In this way, by changing the potential of the second power line depending on the period, the light emission period (T3 ) can be prevented from flowing current to the light-emitting element during periods other than the light-emitting period. The fifth transistor and the fourth scan line can suppress light emission from the light emitting element. Since it is not necessary to provide a scanning line driver circuit, the aperture ratio of the pixel can be increased. Since the number of the power supplies can be reduced, the power consumption can be reduced.

[0221] In addition, by changing the potential of the second power line depending on the period, a reverse bias is applied to the light emitting element. In particular, when the light-emitting element is an EL element, a reverse bias can be applied. By doing so, it is possible to improve the deterioration state of the EL element and increase its reliability. It can also extend your lifespan.

[0222] The pixel configuration of the present invention may be applied to a pixel configuration in which an area gradation method is performed. In a pixel configuration in which one pixel is divided into a plurality of sub-pixels, the pixel configuration of the present invention is applied to each sub-pixel. This can reduce the luminance variation for each sub-pixel. This makes it possible to display high quality images with multiple gradations.

[0223] This embodiment is a case where the contents (or even a part) described in the other embodiments are embodied. An example of a case where it is slightly modified, an example of a case where it is partially changed, an example of a case where it is improved, Examples of detailed descriptions, examples of applications, examples of related parts, etc. Therefore, the contents described in the other embodiments may be applied or combined with this embodiment. The terms may be freely combined or substituted.

[0224] In this embodiment, various figures have been used to explain the present invention. (or a part of) the contents described in another figure (or a part of) Furthermore, in the figures described above, Each part can be combined with other parts to create more figures. It is possible to do this.

[0225] Similarly, the contents (or even a part) described in each drawing of this embodiment may be applied to the drawings of other embodiments. Please feel free to apply, combine, or replace the contents (or any part) of the above. Furthermore, in the drawings of this embodiment, each part may be represented as a different embodiment. By combining parts of the form, even more figures can be constructed.

[0226] (Embodiment 5) In this embodiment, the layout of pixels in the display device of the present invention will be described. For example, The layout diagram of the pixel circuit shown in FIG. 3 is shown in FIG. The numbers correspond to those in FIG. 3. The layout diagram is not limited to FIG. 37. .

[0227] The pixel circuit shown in FIG. 3 includes first to fifth transistors 301 to 305, a storage capacitor 306, A signal line 307, first to fourth scanning lines 308 to 311, first and second power supply lines 312, 3, a capacitance line 314, and a light emitting element 315.

[0228] The first to fourth scanning lines 308 to 311 are formed by the first wiring, and the signal line 307 and the first The second power supply lines 312 and 313 and the capacitance line 314 are formed of the second wiring.

[0229] In the case of a top gate structure, the substrate, the semiconductor layer, the gate insulating film, the first wiring, the interlayer insulating film, the first In the case of a bottom gate structure, the film is composed of the substrate, the first wiring, and the gate. The layers are configured in the following order: a gate insulating film, a semiconductor layer, an interlayer insulating film, and a second wiring.

[0230] In the pixel configuration of this embodiment, the first to fifth transistors each have Among the values ​​of the ratio W / L of the channel length L to the channel width W, the W / L of the first transistor is The maximum value allows more current to flow between the drain and source of the first transistor. As a result, the video signal voltage V data and the first trans Transistor threshold voltage |V th When we obtain a voltage based on |, the larger current This allows for faster operation. Current flowing through the optical element I OLED This allows for a larger amount of light, resulting in a higher brightness. Therefore, in order to maximize the W / L value of the first transistor, In FIG. 37, the first transistor 301 among the first to fifth transistors has The channel width W is maximized.

[0231] In this embodiment, the first to fifth transistors 301 to 305 have a single gate structure. However, the structure of the first to fifth transistors 301 to 305 is not limited to this. For example, a multi-gate transistor having two or more gate electrodes may be used. In the case of a multi-gate structure, the channel regions are connected in series. This results in a configuration in which multiple transistors are connected in series. By adopting a 2-gate structure, it is possible to reduce the off-current and improve the breakdown voltage of the transistor. This improves reliability and reduces the drain-source voltage fluctuations when operating in the saturation region. In this case, the drain-source current does not change much and the characteristics are flat. Alternatively, the gate electrodes may be disposed above and below the channel. By using a structure in which electrodes are arranged, the channel area increases, so the current value can be increased. This reduces the S coefficient (subthreshold coefficient) by making the depletion layer more likely to occur. When gate electrodes are placed above and below the channel, multiple transistors can be connected in parallel. In addition, the gate electrode is placed above the channel. Alternatively, the gate electrode may be disposed under the channel. Alternatively, the gate electrode may be disposed under the channel. Alternatively, the channel region may be divided into multiple regions. The channels may be connected in parallel or in series. The channel (or a part of it) may be overlapped by a source electrode or a drain electrode. By making the structure such that the source electrode and drain electrode overlap the This prevents the accumulation of electric charge in a part of the channel, causing the operation to become unstable. The LDD region may be provided. By providing the LDD region, the off-current can be reduced and the transistor By improving the breakdown voltage of the transistor, reliability can be improved, and when operating in the saturation region, the drain Even if the source voltage changes, the drain-source current does not change much, resulting in flat characteristics. It can be.

[0232] The wiring, electrodes, conductive layers, conductive films, terminals, vias, plugs, etc. are made of aluminum (Al). , Tantalum (Ta), Titanium (Ti), Molybdenum (Mo), Tungsten (W), Neo Nd (Nd), Chromium (Cr), Nickel (Ni), Platinum (Pt), Gold (Au), Silver ( Ag), Copper (Cu), Magnesium (Mg), Scandium (Sc), Cobalt (Co), zinc (Zn), niobium (Nb), silicon (Si), phosphorus (P ), Boron (B), Arsenic (As), Gallium (Ga), Indium (In), Tin ( Sn), oxygen (O), or one or more elements selected from the group consisting of Compounds and alloy materials (e.g., indium) containing one or more elements selected from the above group. Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), Indium with Silicon Oxide Tin oxide (ITSO), zinc oxide (ZnO), tin oxide (SnO), cadmium tin oxide ( CTO), Aluminum Neodymium (Al-Nd), Magnesium Silver (Mg-Ag), Molybdenum It is preferable that the material be made of Mo-Nb or other metals. The layers, conductive films, terminals, etc. may be formed using a material that combines these compounds. Alternatively, a compound of one or more elements selected from the above group with silicon is preferable. Silicides (e.g., aluminum silicon, molybdenum silicon, nickel silicide) etc.), compounds of one or more elements selected from the above group with nitrogen (e.g., titanium nitride, It is preferable that the insulating layer is made of a material such as tantalum nitride, molybdenum nitride, or the like.

[0233] Silicon (Si) can contain n-type impurities (such as phosphorus) or p-type impurities (such as boron). The silicon may contain impurities to improve its electrical conductivity and It is possible for the material to behave like a conductor. Therefore, it can be easily used as wiring, electrodes, etc. It will become easier.

[0234] Silicon can be classified into single crystal, polycrystalline (polysilicon), and microcrystalline (microcrystalline silicon). Silicon with various crystallinity can be used. It is possible to use silicon that does not have crystallinity, such as amorphous silicon. By using single crystal silicon or polycrystalline silicon, wiring, electrodes, conductive layers, conductors, etc. It is possible to reduce the resistance of conductive films, terminals, etc. Amorphous silicon or microcrystalline silicon By using this, wiring and the like can be formed in a simple process.

[0235] Incidentally, aluminum or silver has high electrical conductivity, and therefore can reduce signal delay. Furthermore, it is easy to etch, making it easy to pattern and enabling fine processing. .

[0236] In addition, because copper has high conductivity, it is possible to reduce signal delay. When using copper, In order to improve adhesion, a laminated structure is preferable.

[0237] Molybdenum or titanium is used in oxide semiconductors (ITO, IZO, etc.) or silicon It has the advantages of not causing defects even when in contact with metals, being easy to etch, and having high heat resistance. This is desirable.

[0238] Tungsten is preferable since it has an advantage such as high heat resistance.

[0239] Neodymium is preferable because it has the advantage of being highly heat resistant. When alloyed with aluminum, heat resistance is improved and the aluminum does not form hillocks. It becomes more difficult.

[0240] Silicon has high heat resistance and can be formed simultaneously with the semiconductor layer of the transistor. This is desirable because of the advantages it offers.

[0241] In addition, ITO, IZO, ITSO, zinc oxide (ZnO), silicon (Si), tin oxide (S Cadmium tin oxide (CTO) and cadmium tin oxide (CTO) are transparent, so they are used in areas where light can pass through. For example, it can be used as a pixel electrode or a common electrode.

[0242] IZO is preferable because it is easy to etch and process. It is also unlikely that residue will remain when cleaning the pixel. If IZO is used as the electrode, it may cause problems (short circuit, alignment disorder, etc.) in the liquid crystal element or light emitting element. This can reduce the impact of

[0243] In addition, wiring, electrodes, conductive layers, conductive films, terminals, vias, plugs, etc. may have a single-layer structure. A multi-layer structure may be used. By making it a single-layer structure, wiring, electrodes, conductive layers, conductive films This simplifies the manufacturing process for terminals, etc., shortens the number of days required for the process, and reduces costs. Alternatively, by using a multi-layer structure, it is possible to utilize the advantages of each material. It is possible to form wiring, electrodes, etc. with good performance while reducing the disadvantages. For example, by including a low-resistance material (such as aluminum) in the multi-layer structure, the In addition, a laminated structure in which a low heat-resistant material is sandwiched between high heat-resistant materials can be used. By doing so, it is possible to take advantage of the advantages of low heat resistance materials while improving the heat resistance of wiring, electrodes, etc. For example, the layer containing aluminum can be made of molybdenum, titanium, or neodymium. It is preferable to use a laminated structure in which the metal oxide is sandwiched between layers containing tungsten or the like.

[0244] In addition, when wiring, electrodes, etc. come into direct contact with each other, they may have a detrimental effect on each other. For example, one wiring or electrode may penetrate into the other wiring or electrode, changing the properties of the material. As another example, when forming or manufacturing a high resistance part, When manufacturing, problems may occur and normal manufacturing may not be possible. By sandwiching or covering a reactive material with a less reactive material, the laminate structure For example, when connecting ITO and aluminum, the thickness between the ITO and aluminum is It is preferable to sandwich titanium, molybdenum, or neodymium alloys between the two. When connecting ITO to aluminum, titanium, molybdenum, It is preferable to sandwich a neodymium alloy.

[0245] The term "wiring" refers to an arrangement of conductors. It may be linear or may be elongated. Therefore, the electrodes may be included in the wiring.

[0246] Carbon nanotubes are used as wiring, electrodes, conductive layers, conductive films, terminals, vias, plugs, etc. Furthermore, since carbon nanotubes have a light-transmitting property, they can transmit light. It can be used in transparent areas. For example, it can be used as a pixel electrode or a common electrode. can be done.

[0247] This embodiment is a case where the contents (or even a part) described in the other embodiments are embodied. An example of a case where it is slightly modified, an example of a case where it is partially changed, an example of a case where it is improved, Examples of detailed descriptions, examples of applications, examples of related parts, etc. Therefore, the contents described in the other embodiments may be applied or combined with this embodiment. The terms may be freely combined or substituted.

[0248] In this embodiment, various figures have been used to explain the present invention. (or a part of) the contents described in another figure (or a part of) Furthermore, in the figures described above, Each part can be combined with other parts to create more figures. It is possible to do this.

[0249] Similarly, the contents (or even a part) described in each drawing of this embodiment may be applied to the drawings of other embodiments. Please feel free to apply, combine, or replace the contents (or any part) of the above. Furthermore, in the drawings of this embodiment, each part may be represented as a different embodiment. By combining parts of the form, even more figures can be constructed.

[0250] (Embodiment 6) In this embodiment, the configurations of a signal line driving circuit, a scanning line driving circuit, and the like in a display device and their operation will be described. This article explains the work.

[0251] First, as a pixel configuration, a signal line and first to fourth scanning lines as shown in FIG. 3 and FIG. 8 are used. Here, we will explain the case where a pixel configuration is used to control the operation by The following description will be given by taking as an example a case where the pixel configuration shown in FIG. An example is shown in Figure 38.

[0252] The display device shown in FIG. 38 includes a pixel portion 3801, first to fourth scanning line driving circuits 3802 to 3803, and a pixel portion 3804. 805, a signal line driver circuit 3806, and a first scanning line driver circuit 3802 and a first The second scanning line driving circuit 3803 and the second scanning line 309 are connected. The third scanning line driving circuit 3804 and the third scanning line 310 are connected to each other, and the fourth scanning line A signal line driver circuit 3805 is connected to the fourth scanning line 311, and a signal line driver circuit 3806 is connected to the signal The first to fourth scanning lines and the signal lines are connected to a line 307. These correspond to the symbols attached to the

[0253] First, the scanning line driver circuit will be described. The second to fourth scanning line driving circuits 308 are circuits for sequentially outputting selection signals to the scanning lines 308. The same is true for 803 to 3805. As a result, a selection signal is written to the pixel section 3801. Be absorbed.

[0254] An example of the configuration of the first to fourth scanning line driving circuits 3802 to 3805 is shown in FIG. The fourth scanning line driver circuits 3802 to 3805 mainly include a shift register 3901 and an amplifier circuit. It has a path 3902 and the like.

[0255] Next, the operations of the first to fourth scanning line driving circuits 3802 to 3805 shown in FIG. 39 will be briefly explained. The shift register 3901 receives a clock signal (G-CLK), a start pulse ( G-SP) and clock inversion signal (G-CLKB) are input, and the timing of these signals The sampling pulses are output in sequence according to the The signal is amplified by a width circuit 3902 and input to the pixel section (X54) 01 from each scanning line.

[0256] The amplifier circuit 3902 may include a buffer circuit or a level shifter circuit. The scanning line driver circuit may include a shift register 3901 and an amplifier circuit 3902. In addition to 02, a pulse width control circuit and the like may be provided.

[0257] Next, the signal line driver circuit will be described. The signal line driver circuit 3806 is connected to the pixel section. The signal line driver circuit 3806 is a circuit for sequentially outputting video signals to the signal line 307. The video signal output from the pixel portion 3801 is input to the pixel portion 3801. An image is displayed by controlling the light emission state of the pixels according to the optical signal.

[0258] Here, a configuration example of the signal line driver circuit 3806 is shown in FIG. 38 shows an example of a signal line driver circuit 3806 for supplying signals to pixels. The signal line driver circuit 3806 mainly includes a shift register 4001, a first latch circuit 4002, and a , a second latch circuit 4003, an amplifier circuit 4004, etc. As the configuration of 04, a buffer circuit or a level shifter circuit may be included. The image display device may have a circuit for converting digital signals to analog signals, and may also have a circuit for performing gamma correction. The device may have a circuit having a function to perform the above operations.

[0259] Next, the operation of the signal line driver circuit 3806 shown in FIG. Register 4001 contains the clock signal (S-CLK), the start pulse (S-SP), and the clock The clock inversion signal (S-CLKB) is input, and the sub-clocks are sequentially A sampling pulse is output.

[0260] The sampling pulse output from the shift register 4001 is input to the first latch circuit 400. The first latch circuit 4002 receives a video signal from a video signal line at a voltage V data The input is The video signal is held in columns.

[0261] When the first latch circuit 4002 has completed holding the video signal up to the last column, the horizontal feedback During the line period, a latch signal is input from the latch control line and is held in the first latch circuit 4002. The video signals that were being held in the latch circuits are then simultaneously transferred to the second latch circuit (X56) 03. The video signals held in the second latch circuit 4003 are simultaneously output to the amplifier circuit 400 4. Then, the video signal voltage V data The amplitude of The amplified video signal is input to the pixel portion 3801 from each signal line.

[0262] The video signal held in the second latch circuit 4003 is input to an amplifier circuit 4004, and While the signal is being input to the pixel section 3801, the shift register 4001 is sampling again. A ring pulse is output. In other words, two operations are performed at the same time. This results in a line-sequential This operation is then repeated.

[0263] In addition, there are cases where signals are supplied to pixels by dot sequential driving. In that case, the signal line driving circuit 380 An example of the signal line driver circuit 3806 is shown in FIG. The shift register 4001 and the sampling circuit 4005 are connected to the shift register 4001. The sampling pulse is output to the sampling circuit 4005. The 4005 receives a video signal at voltage V data Input and sampling In response to the signal pulse, a video signal is output to the pixel section 3801 in sequence. The next drive is possible.

[0264] In addition, the signal line driver circuit and a part thereof (such as a current source circuit and an amplifier circuit) are the same as the pixel portion 3801. It may not exist on a single substrate, but may be configured using an external IC chip, for example.

[0265] By using the above-described scanning line driving circuit and signal line driving circuit, the pixel circuit of the present invention can be driven.

[0266] In the pixel circuits shown in FIG. 3 and FIG. 8, the first and second scanning lines are provided with inverted signals. Therefore, either the first or second scanning line driving circuit is selected. By using the above, a selection signal input to either the first or second scanning line is controlled, and the other An inverted signal may be input to the other scanning line. As shown in.

[0267] The display device shown in FIG. 41 includes a pixel portion 3801, first, third and fourth scanning line driver circuits 380, 2, 3804, 3805, a signal line driver circuit 3806, and an inverter 3807. The first scanning line driving circuit 3802 is connected to the first scanning line 308, and the second scanning line 309 is connected to the is connected to the first scanning line driver circuit 3802 via an inverter 3807. The connection of the line driver circuit and the signal line driver circuit is the same as that of the display device shown in FIG. The explanation will be omitted here. The reference numerals given to the first to fourth scanning lines and the signal lines are the same as those in FIG. It corresponds to the attached symbol.

[0268] In the display device shown in FIG. 41, the first scanning line 30 is driven by a first scanning line driving circuit 3802. 8, and an inverter 3807 is used for the second scanning line 309. The inverted signal of the selection signal input to the first scanning line 308, which is generated by the above-mentioned method, is input.

[0269] Also, for example, in the pixel configurations shown in FIG. 3 and FIG. 8, the same selection is applied to the second and fourth scanning lines. Therefore, as in the pixel configurations shown in FIG. 14 and FIG. 15, the third and fifth The transistors may be controlled using the same scanning line. 42. As an example, the pixel configuration shown in FIG. explain.

[0270] FIG. 42 shows a case where the third and fifth transistors 303 and 305 are connected to a second scanning line 309. The display device shown in FIG. 42 includes a pixel portion 3801, It has first to third scanning line driving circuits 3802 to 3804 and a signal line driving circuit 3806. The connections of the driving circuits are the same as those of the display device shown in FIG. 38, so the explanation is omitted here. The reference characters attached to the first to third scanning lines, the signal lines, and the third and fifth transistors are as follows: , which correspond to the reference symbols in FIG.

[0271] In addition, for example, as in the pixel configuration shown in FIG. The second transistor, The first, second and fifth transistors can be controlled by the same scan line. An example of the configuration of the display device in this case is shown in FIG.

[0272] FIG. 43 shows the second, third and fifth transistors 302, 303 and 305 connected to the first scan line 3. 43 is a configuration example of a display device when controlled using the pixel 3801, first and third scanning line driving circuits 3802 and 3804, and a signal line driving circuit 380 6. The connections of the driving circuits are the same as those of the display device shown in FIG. The first and third scanning lines, the signal lines, the second, third and fifth transistors The reference numerals attached to the registers correspond to those in FIG.

[0273] In this way, by configuring the display device as shown in Figs. 41 to 43, The pixel circuit of the invention can be driven.

[0274] By configuring the display device as shown in FIGS. 41 to 43, the scanning lines and Since the number of the scanning line driver circuits can be reduced, the aperture ratio of the pixel portion can be increased. In addition, power consumption can be reduced. As a result, the frame can be narrowed and the area occupied by the pixel portion can be increased.

[0275] The configurations of the signal line driver circuit and the scanning line driver circuit are not limited to those shown in FIGS.

[0276] The transistor in the present invention may be any type of transistor. Therefore, the circuit shown in FIG. 38 to FIG. 43 may be formed on the substrate. The paths may all be formed on a glass substrate, or may all be formed on a plastic substrate. It may be formed on a single crystal substrate or on an SOI substrate. However, it may be formed on any substrate. Alternatively, the circuits in FIGS. 38 to 43 are formed on a different substrate. That is, all of the circuits in FIG. 38 to FIG. 43 may be formed on the same substrate. For example, in FIG. 38 to FIG. 43, the pixel section and the scanning line driving circuit The circuit is formed on a glass substrate using transistors, and is The IC chip is mounted on a single crystal substrate using COG (Chip On Glass) Alternatively, the IC chip may be connected by TAB (Ta PE Automated Bonding (ABE) and printed circuit boards are used to connect to the glass substrate. In this way, since a part of the circuit is formed on the same substrate, the number of parts is reduced. This reduces costs by reducing the number of connections to circuit components, and improves reliability. In addition, the parts with high drive voltages and high drive frequencies consume a lot of power. Therefore, if such parts are not formed on the same board, the power consumption can be reduced. This can prevent the improvement of

[0277] This embodiment is a case where the contents (or even a part) described in the other embodiments are embodied. An example of a case where it is slightly modified, an example of a case where it is partially changed, an example of a case where it is improved, Examples of detailed descriptions, examples of applications, examples of related parts, etc. Therefore, the contents described in the other embodiments may be applied or combined with this embodiment. The terms may be freely combined or substituted.

[0278] In this embodiment, various figures have been used to explain the present invention. (or a part of) the contents described in another figure (or a part of) Furthermore, in the figures described above, Each part can be combined with other parts to create more figures. It is possible to do this.

[0279] Similarly, the contents (or even a part) described in each drawing of this embodiment may be applied to the drawings of other embodiments. Please feel free to apply, combine, or replace the contents (or any part) of the above. Furthermore, in the drawings of this embodiment, each part may be represented as a different embodiment. By combining parts of the form, even more figures can be constructed.

[0280] (Embodiment 7) In this embodiment, a display panel used in the display device of the present invention will be described with reference to FIG. FIG. 44(a) is a top view showing the display panel, and FIG. 44(b) is a top view showing FIG. A cross-sectional view taken along the line A-A'. 02, a first scanning line driver circuit 4403, and a second scanning line driver circuit 4406. The sealing substrate 4404 and the sealant 4405 are provided, and the inside surrounded by the sealant 4405 is a space. The number is 4407.

[0281] The wiring 4408 is connected to the first scanning line driver circuit 4403, the second scanning line driver circuit 4406, and and a wiring for transmitting a signal input to the signal line driver circuit 4401, and It receives video signals, clock signals, start signals, etc. from FPC4409. On the joint between the C4409 and the display panel, there is an IC chip (memory circuit, buffer circuit, etc.). The semiconductor chips on which the COG (Chip On Glass) are formed are 4422 and 4423. ) are mounted. Note that only the FPC is shown here, but this FPC has A printed wiring board (PWB) may be attached.

[0282] Next, the cross-sectional structure will be described with reference to FIG. 02 and its peripheral driving circuits (first scanning line driving circuit 4403, second scanning line driving circuit 440 6 and a signal line driver circuit 4401) are formed, but here, the signal line driver circuit 440 1 and a pixel portion 4402 are shown.

[0283] The signal line driver circuit 4401 includes many transistors such as a transistor 4420 and a transistor 4421. In this embodiment, the peripheral driving circuit is arranged on the substrate. Although the display panel shown in FIG. 1 is formed with a single body, this is not necessarily the case, and all or part of the peripheral driving circuitry may be formed with a single body. A part of it may be formed as an IC chip or the like and mounted by COG or the like.

[0284] The pixel portion 4402 includes a switching transistor 4411 and a driving transistor The driving transistor 4412 and the driving circuit 4413 form a pixel. The source electrode of 412 is connected to the first electrode 4413. An insulator 4414 is formed to cover the end of the substrate. Here, a positive photosensitive acrylic resin is used. It is formed by using an oil film.

[0285] In order to improve the coverage, the upper or lower end of the insulator 4414 is provided with a curvature. For example, a positive-type photoresist is used as the material for the insulator 4414. When using optical acrylic, the radius of curvature (0.2μm to 3μm) is set only on the upper end of the insulator 4414. It is preferable that the insulating material 4414 has a curved surface having a photosensitive material. Negative type, which becomes insoluble in the etchant when exposed to light, or soluble in the etchant when exposed to light. Any positive type photoresist having a good photoresistivity can be used.

[0286] A layer 4416 containing an organic compound and a second electrode 4417 are formed on the first electrode 4413. Here, the material used for the first electrode 4413 functioning as an anode is For this purpose, it is desirable to use a material with a large work function. For example, ITO (indium tin oxide) oxide film, indium zinc oxide (IZO) film, titanium nitride film, chromium film, tungsten In addition to single-layer films such as TiN, Zn, and Pt films, films mainly made of titanium nitride and aluminum are also available. and a three-layer structure consisting of a titanium nitride film, an aluminum-based film, and a titanium nitride film. In addition, when the multilayer structure is used, the resistance of the wiring is low and good ohmic properties are obtained. The electrode can be electrically connected to the anode and can also function as an anode.

[0287] The layer 4416 containing an organic compound is formed by deposition using a deposition mask or ink jet deposition. The layer 4416 containing an organic compound is formed by a method using a metal complex of Group 4 of the periodic table. Other materials that can be used in combination include low-molecular-weight The material used in the layer containing an organic compound may be either a polymeric material or a polymeric material. Generally, organic compounds are used as the material in a single layer or a multilayer structure. In this case, the term also includes a configuration in which an inorganic compound is used as a part of a film made of an organic compound. Furthermore, known triplet materials can also be used.

[0288] Further, a second electrode 4417, which is a cathode, is formed on the layer 4416 containing an organic compound. The materials used are those with small work functions (Al, Ag, Li, Ca, or any of these). The alloys MgAg, MgIn, AlLi, CaF2, or calcium nitride can be used. In addition, when light generated in the layer 4416 containing an organic compound is transmitted through the second electrode 4417, The second electrode 4417 is made of a thin metal film and a transparent conductive film (ITO (Indium Tin Oxide)). Indium tin oxide), indium oxide zinc oxide alloy (In2O3-ZnO), zinc oxide It is preferable to use a laminate with a ZnO or the like.

[0289] Furthermore, the sealing substrate 4404 is attached to the substrate 4410 with a sealant 4405. The space 4407 surrounded by the substrate 4410, the sealing substrate 4404, and the sealant 4405 is filled with the light. The space 4407 is filled with an inert gas ( In addition to cases where the gas is filled with nitrogen, argon, etc., the configuration also includes a configuration where the gas is filled with a sealant 4405. It shall be so.

[0290] It is preferable to use an epoxy resin for the sealant 4405. It is preferable that the sealing substrate 440 is made of a material that is as impermeable to moisture and oxygen as possible. Materials used for 4 include glass and quartz substrates, as well as FRP (Fiberglass-Re inforced Plastics), PVF (Polyvinyl Fluoride), Mylar, A plastic substrate made of polyester, acrylic or the like can be used.

[0291] In this manner, a display panel having the pixel configuration of the present invention can be obtained.

[0292] As shown in FIG. 44, a signal line driver circuit 4401, a pixel portion 4402, a first scanning line driver circuit By forming the second scanning line driver circuit 4403 and the second scanning line driver circuit 4406 in one body, the cost of the display device can be reduced. In addition, the signal line driver circuit 4401, the pixel portion 4402, the first scanning line driver circuit 4403, The transistors used in the second scanning line driver circuit 4403 and the second scanning line driver circuit 4406 are unipolar. Since the manufacturing process can be simplified, further cost reduction can be achieved. 401, a pixel portion 4402, a first scanning line driver circuit 4403, and a second scanning line driver circuit 44 By applying amorphous silicon to the semiconductor layer of the transistors used in This allows for further cost reduction.

[0293] The display panel is configured as follows: 4402, a first scanning line driver circuit 4403, and a second scanning line driver circuit 4406. The signal line driver circuit corresponding to the signal line driver circuit 4401 may be formed in an integrated manner. It may also be formed on a C chip and mounted on the display panel using COG or the like.

[0294] In other words, only the signal line driver circuits, which require high-speed operation, are implemented using CMOS or other I The IC chip is formed on a silicon wafer or other semiconductor By making it into a chip, it is possible to achieve faster operation and lower power consumption.

[0295] In addition, by forming the scanning line driver circuit integrally with the pixel portion, it is possible to reduce costs. The scanning line driver circuit and pixel section can be constructed using transistors of the same conductivity type, resulting in further cost reduction. The pixel configuration of the pixel section may be the same as that shown in the first to fourth embodiments. In addition, amorphous silicon can be used for the semiconductor layer of the transistor. This simplifies the manufacturing process and further reduces costs.

[0296] In this way, the cost of a high-definition display device can be reduced. 0, an IC chip with functional circuits (memory and buffers) is mounted. This allows the board area to be used effectively.

[0297] In addition, the signal line driver circuit 4401, the first scanning line driver circuit 4403 and the second scanning line driver circuit 4404 in FIG. A signal line driver circuit corresponding to the first scanning line driver circuit 4406, a first scanning line driver circuit and a second The scanning line driver circuit is formed on an IC chip and mounted on the display panel using COG or similar. In this case, it is possible to reduce the power consumption of a high-definition display device. In order to realize a display device with lower power consumption, The body layer is preferably made of polysilicon.

[0298] In addition, amorphous silicon is used for the semiconductor layer of the transistor in the pixel portion 4402. This allows for lower costs. Furthermore, it also makes it possible to manufacture large display panels. become.

[0299] Note that the scanning line driver circuit and the signal line driver circuit are not limited to being provided in the row and column directions of the pixels. Not determined.

[0300] Next, an example of a light-emitting element that can be used as the light-emitting element 4418 is shown in FIG.

[0301] On a substrate 4501, an anode 4502, a hole injection layer 4503 made of a hole injection material, A hole transport layer 4504 made of a hole transport material, a light emitting layer 4505, and an electron transport layer made of an electron transport material. A transport layer 4506, an electron injection layer 4507 made of an electron injection material, and a cathode 4508 are laminated. Here, the light-emitting layer 4505 is made of only one type of light-emitting material. The element of the present invention may be made of two or more materials. The invention is not limited to this structure.

[0302] In addition to the laminated structure in which each functional layer is laminated as shown in Figure 45, A variety of devices are being developed, including high-efficiency devices that use triplet luminescent materials that emit light from triplet excited states in the optical layer. The hole blocking layer controls the recombination area of ​​carriers, and the light emission It can also be applied to white light emitting devices obtained by dividing the region into two regions.

[0303] Next, a method for producing the element of the present invention shown in FIG. 45 will be described. First, an anode 4502 (IT A substrate 4501 having indium tin oxide (ITO) is provided with a hole injection material, a hole transport material, and a light emitting material. Next, the electron transport material and the electron injection material are evaporated, and finally the cathode 4508 is evaporated. It is formed by deposition.

[0304] Next, the hole injection material, the hole transport material, the electron transport material, the electron injection material, and the light emitting material are preferably Suitable materials are listed below.

[0305] As hole injection materials, organic compounds such as porphyrin compounds and phthalocyanine ( (hereinafter referred to as "H2Pc") and copper phthalocyanine (hereinafter referred to as "CuPc") are effective. In addition, the ionization potential of the hole transport material is smaller than that of the hole transport material to be used. If the material has a hole transport function, it can also be used as a hole injection material. There are also materials in which the compound is chemically doped, such as polystyrene sulfonate (PSS). Polyethylenedioxythiophene (hereinafter referred to as "PEDOT") doped with PEDOT, Polyaniline, etc. Insulating polymer compounds are also effective in flattening the anode. Polyimide (hereinafter referred to as "PI") is often used. Inorganic compounds are also used. In addition to thin metal films such as gold and platinum, aluminum oxide (hereinafter referred to as "alumina") Ultra-thin films, etc.

[0306] The most widely used hole transport materials are aromatic amines (i.e., benzene A widely used material is 4,4 '-Bis(diphenylamino)-biphenyl (hereinafter referred to as "TAD") and its derivatives 4,4'-bis[N-(3-methylphenyl)-N-phenyl-amino]-biphenyl (hereinafter referred to as "TPD"), 4,4'-bis[N-(1-naphthyl)-N-phenyl 4,4',4"-Tri-amino]-biphenyl (hereinafter referred to as "α-NPD"). Tris(N,N-diphenyl-amino)-triphenylamine (hereinafter referred to as "TDATA") (Note), 4,4',4”-tris[N-(3-methylphenyl)-N-phenyl-amino Starburst aromatic compounds such as 1,2-triphenylamine (hereinafter referred to as "MTDATA"). Examples of the aromatic amine compounds include aromatic amine compounds.

[0307] Metal complexes are often used as electron transport materials, such as tris(8-quinolinolato)aluminum complexes. Alq3), BAlq, tris(4-methyl-8-quinolinol) ) aluminum (hereinafter referred to as "Almq"), bis(10-hydroxybenzo[h]- Quinolinato) beryllium (hereinafter referred to as "Bebq") and other quinoline skeletons or benzo Metal complexes with quinoline skeletons. Bis[2-(2-hydroxyphenyl )-benzoxazolato]zinc (hereinafter referred to as "Zn(BOX)2"), bis[2-(2 -hydroxyphenyl)-benzothiazolato]zinc (hereinafter referred to as "Zn(BTZ)2" There are also metal complexes with oxazole and thiazole ligands such as In addition to the body, 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1, 3,4-Oxadiazole (hereinafter referred to as "PBD"), oxadiazo such as OXD-7 derivatives, TAZ, 3-(4-tert-butylphenyl)-4-(4-ethylphenyl p-EtTAZ triazole derivatives such as bathophenanthroline (hereinafter referred to as "BPhen"); (See below), and phenanthroline derivatives such as BCP have electron transport properties.

[0308] As the electron injection material, the above-mentioned electron transport material can be used. Metal halides such as calcium fluoride, lithium fluoride, and cesium fluoride, and lithium oxide Ultra-thin films of insulating materials such as alkali metal oxides, such as lithium, are often used. Li(acac) and 8-quinolinol Complexes of alkali metals such as lithium (hereinafter referred to as "Liq") are also effective.

[0309] The luminescent materials are the aforementioned Alq3, Almq, BeBq, BAlq, and Zn(BOX In addition to metal complexes such as Zn(BTZ)2 and Zn(BTZ)2, various fluorescent dyes are effective. Examples include the blue 4,4'-bis(2,2-diphenyl-vinyl)-biphenyl and the red-orange Color 4-(dicyanomethylene)-2-methyl-6-(p-dimethylaminostyryl)-4 H-pyran. Triplet luminescent materials are also possible, using platinum or iridium. The main materials are complexes with central metals. iridium, bis(2-(4'-tolyl)pyridinato-N,C 2’ ) Acetylacetone Sodium iridium (hereinafter referred to as "acacIr(tpy)2"), 2,3,7,8,12 , 13,17,18-octaethyl-21H,23H porphyrin-platinum are known. There are.

[0310] By combining materials having each of the above functions, highly reliable light-emitting elements are manufactured. It is possible.

[0311] It is also possible to use a light emitting device in which layers are formed in the reverse order to that shown in FIG. A cathode 4508 is placed on the cathode 4501, an electron injection layer 4507 is placed on the electron injection layer 4507 and an electron An electron transport layer 4506 made of a transport material, a light emitting layer 4505, and a hole transport layer made of a hole transport material. layer 4504, a hole injection layer 4503 made of a hole injection material, and an anode 4502 are laminated. This is the element structure.

[0312] In addition, in order to extract light emitted from the light-emitting element, at least one of the anode and cathode must be transparent. Then, a transistor and a light emitting element are formed on the substrate, and light is emitted from the surface opposite the substrate. The top surface emission takes the light out from the surface on the substrate side, the bottom surface emission takes the light out from the surface on the substrate side, There are light emitting devices with a dual-sided emission structure in which light is emitted from the opposite surface. The present invention can also be applied to a light emitting device having a light emitting structure.

[0313] First, a light emitting element having a top emission structure will be described with reference to FIG.

[0314] A driving transistor 4601 is formed on a substrate 4600. A first electrode 4602 is formed in contact with the source electrode of the first electrode 4602, and a layer 4603 containing an organic compound is formed thereon. 03 and a second electrode 4604 are formed.

[0315] The first electrode 4602 is an anode of the light-emitting element. The cathode of the element. In other words, the first electrode 4602 and the second electrode 4604 are connected to an organic compound. The layer 4603 sandwiched between them constitutes a light emitting element.

[0316] In addition, the material used for the first electrode 4602 functioning as an anode is a material having a work function It is desirable to use a material with a large resistance. For example, titanium nitride film, chromium film, tungsten In addition to single-layer films such as titanium nitride, Zn film, and Pt film, A three-layer structure consisting of a titanium nitride film, an aluminum-based film, and a titanium nitride film is used. In addition, when the multilayer structure is used, the resistance of the wiring is low and good ohmic characteristics can be obtained. The metal film that reflects light can be used as an anode. By using this, it is possible to form an anode that does not transmit light.

[0317] In addition, the material used for the second electrode 4604 functioning as a cathode is a material having a small work function. Materials (Al, Ag, Li, Ca, or their alloys MgAg, MgIn, AlLi, C aF2, or calcium nitride) and a transparent conductive film (ITO (indium tin oxide) It uses a laminate of tin oxide (TiO2), indium zinc oxide (IZO), zinc oxide (ZnO, etc.) In this way, by using a thin metal film and a transparent conductive film, A passivable cathode can be formed.

[0318] In this way, it is possible to extract light from the light-emitting element to the upper surface as shown by the arrow in FIG. In other words, when applied to the display panel of FIG. 44, light is guided to the sealing substrate 4404 side. Therefore, when a light emitting device with a top emission structure is used in a display device, it is necessary to seal the light emitting device. The stop substrate 4404 is a substrate having optical transparency.

[0319] In addition, when an optical film is provided, the optical film may be provided on the sealing substrate 4404. .

[0320] The first electrode 4602 is made of a material such as MgAg, MgIn, or AlLi that functions as a cathode. It can also be formed using a metal film made of a material with a small thermal coefficient. The electrode 4604 is made of ITO (indium tin oxide) film, indium zinc oxide (IZO) film Thus, with this configuration, the transmittance of the top surface emission is can be increased.

[0321] Next, a light emitting element having a bottom emission structure will be described with reference to FIG. Since the light emitting element has the same structure as that in FIG. 46(a), the same reference numerals will be used in the description.

[0322] Here, the material used for the first electrode 4602 functioning as an anode is selected from materials having a large work function. It is desirable to use a material with low resistance. For example, ITO (indium tin oxide) film, indium A transparent conductive film such as an IZO film can be used. By using a conductive film, it is possible to form an anode that can transmit light.

[0323] In addition, the material used for the second electrode 4604 functioning as a cathode is a material having a small work function. Materials (Al, Ag, Li, Ca, or their alloys MgAg, MgIn, AlLi, C A metal film made of fluorine (fluorine-containing fluorine, or calcium nitride) can be used. By using a reflective metal film, a cathode that does not transmit light can be formed.

[0324] In this way, it is possible to extract light from the light-emitting element to the bottom surface, as shown by the arrow in FIG. 46(b). In other words, when applied to the display panel of FIG. 44, light is emitted to the substrate 4410 side. Therefore, when a light emitting device having a bottom emission structure is used in a display device, the substrate 4 A substrate 410 having optical transparency is used.

[0325] In addition, when an optical film is provided, the optical film may be provided on the substrate 4410 .

[0326] Next, a light emitting device with a dual emission structure will be described with reference to FIG. Since the light emitting element has the same structure as that in FIG. 46(a), the same reference numerals will be used in the description.

[0327] Here, the material used for the first electrode 4602 functioning as an anode is selected from materials having a large work function. It is desirable to use a material with low resistance. For example, ITO (indium tin oxide) film, indium A transparent conductive film such as an IZO film can be used. By using a conductive film, it is possible to form an anode that can transmit light.

[0328] In addition, the material used for the second electrode 4604 functioning as a cathode is a material having a small work function. Materials (Al, Ag, Li, Ca, or their alloys MgAg, MgIn, AlLi, C aF2, or calcium nitride) and a transparent conductive film (ITO (indium tin oxide) Tin oxide), indium oxide zinc oxide alloy (In2O3-ZnO), zinc oxide (ZnO) In this way, a thin metal film and a transparent conductive film having transparency can be formed. By using this, a cathode that can transmit light can be formed.

[0329] In this way, it is possible to extract light from the light-emitting element on both sides, as shown by the arrows in Figure 46(c). In other words, when applied to the display panel of FIG. 44, the substrate 4410 and the sealing substrate Therefore, the light is emitted to the side of 4404. In this case, the substrate 4410 and the sealing substrate 4404 are both light-transmitting substrates. There are.

[0330] In addition, when an optical film is provided, both the substrate 4410 and the sealing substrate 4404 may be provided with an optical film. A film may be provided.

[0331] In addition, a display device that realizes full color display using white light-emitting elements and color filters The present invention can also be applied to

[0332] As shown in FIG. 47, a base film 4702 is formed on a substrate 4700. A driving transistor 4701 is formed on the source electrode of the driving transistor 4701. A first electrode 4703 is formed in contact with the first electrode 4703, and a layer including an organic compound 4704 and a second electrode 4705 are formed thereon. A pole 4705 is formed.

[0333] The first electrode 4703 is an anode of the light-emitting element. The cathode of the element. In other words, the first electrode 4703 and the second electrode 4705 are connected to an organic compound. The layer 4704 containing the fluorine atom is sandwiched between the layers to form a light-emitting element. Then, a red color filter 4706R and a green color filter 4706R are placed on the top of the light-emitting element. The filter 4706G and blue color filter 4706B are installed, making it possible to display full color images. In addition, the black matrix that separates these color filters can be used. (also called BM) 4707 is provided.

[0334] The above-mentioned configurations of the light-emitting element can be used in combination and can be appropriately used in the display device of the present invention. The above-mentioned configuration of the display panel and the light-emitting elements are merely examples. The present invention can also be applied to display devices having other configurations different from the above.

[0335] Next, a partial cross-sectional view of a pixel portion of a display panel is shown.

[0336] First, in the case where a polysilicon (p-Si:H) film is used for the semiconductor layer of a transistor, This will be explained using Figures 48, 49 and 50.

[0337] Here, the semiconductor layer is formed by, for example, forming an amorphous silicon (a-Si) film on a substrate by a known method. It is not necessary to be limited to an amorphous silicon film, and any film having a non-crystalline structure may be used. A semiconductor film (including a microcrystalline semiconductor film) may be used. Furthermore, an amorphous silicon germanium film may be used. The film may be a compound semiconductor film containing an amorphous structure such as the above.

[0338] The amorphous silicon film is then crystallized using laser crystallization, RTA, or furnace annealing. Crystallization is performed by thermal crystallization methods using a metal element that promotes crystallization, etc. Of course, these may be combined.

[0339] The above-mentioned crystallization forms a partially crystallized region in the amorphous semiconductor film.

[0340] Furthermore, the crystalline semiconductor film, the crystallinity of which has been partially enhanced, is patterned into a desired shape. The crystallized region is used to form an island-shaped semiconductor film. Used for the body layer.

[0341] As shown in FIG. 48(a), a base film 4802 is formed on a substrate 4801, and a semiconductor The semiconductor layer is formed on the channel forming region 4 of the driving transistor 4818. 803, an LDD region 4804 and an impurity region 4805 which becomes a source region or a drain region , a channel forming region 4806 which becomes the lower electrode of a capacitor element 4819, and an LDD region 48 07 and an impurity region 4808. The region 4806 may be channel doped.

[0342] The substrate may be a glass substrate, a quartz substrate, a ceramic substrate, or the like. 4802 includes aluminum nitride (AlN), silicon oxide (SiO2), and silicon oxynitride. (SiO x N y ) or a laminate of these can be used.

[0343] A gate electrode 4810 and a capacitor element 481 are formed on the semiconductor layer via a gate insulating film 4809. Nine upper electrodes 4811 are formed.

[0344] An interlayer insulating film 4812 is formed to cover the capacitor element 4819 and the driving transistor 4818. A wiring 4813 is formed on the interlayer insulating film 4812 through a contact hole. A pixel electrode 4814 is formed in contact with the wiring 4813, and the pixel electrode 481 An insulator 4815 is formed to cover the end of the photoresist 4 and the wiring 4813. The pixel electrode 4814 is formed by using a photosensitive acrylic resin film. A layer 4816 containing an organic compound and a counter electrode 4817 are formed. A light-emitting element 4820 is formed in a region where the layer 4816 containing an organic compound is sandwiched between the electrode 4817. It has been done.

[0345] As shown in FIG. 48(b), the LDD that constitutes a part of the lower electrode of the capacitance element 4819 A region 4821 may be provided so as to overlap with the upper electrode 4811 of the capacitor element 4819. Note that the same reference numerals are used for the parts common to FIG. 48(a) and the explanation will be omitted.

[0346] As shown in FIG. 49(a), the capacitor element 4823 is A second upper electrode 4822 formed in the same layer as the wiring 4813 in contact with the impurity region 4805 In addition, the same reference numerals are used for the parts common to FIG. 48(a) and the explanation is omitted. Since the second upper electrode 4822 is in contact with the impurity region 4808, the upper electrode 48 The first gate insulating film 4809 is sandwiched between the first gate electrode 4801 and the channel forming region 4806. The capacitor element, the upper electrode 4811, and the second upper electrode 4822 sandwich an interlayer insulating film 4812. The first capacitance element and the second capacitance element are connected in parallel. A capacitor 4823 is formed using a first capacitor. Since the capacitance is the sum of the capacitance of the first and second capacitive elements, it has a large capacitance in a small area. In other words, the capacitor element used as the capacitor element of the pixel configuration of the present invention can be formed. This leads to an improvement in the aperture ratio.

[0347] In addition, the capacitor may have a structure as shown in FIG. The semiconductor layer is formed on the substrate 4902. The channel forming region 4903, the LDD region 4904 and the source region or drain region of the transistor 4918 The channel forming region 4903 has an impurity region 4905 which becomes a channel region. Redoping may also be performed.

[0348] The substrate may be a glass substrate, a quartz substrate, a ceramic substrate, or the like. 4902 includes aluminum nitride (AlN), silicon oxide (SiO2), and silicon oxynitride. (SiO x N y ) or a laminate of these can be used.

[0349] A gate electrode 4907 and a first electrode 4908 are provided on the semiconductor layer via a gate insulating film 4906. 08 is formed.

[0350] A first interlayer insulating film 4909 is formed to cover the driving transistor 4918 and the first electrode 4908. A wiring 4910 is formed on the first interlayer insulating film 4909 through a contact hole. It is in contact with the impurity region 4905. In addition, the same layer as the wiring 4910 and the same material as the wiring 4910 are provided. A second electrode 4911 made of the material is formed.

[0351] Further, a second interlayer insulating film 4912 is formed so as to cover the wiring 4910 and the second electrode 4911. A second interlayer insulating film 4912 is formed on the second interlayer insulating film 4912, and the second interlayer insulating film 4912 is connected to the wiring 4910 through a contact hole. A pixel electrode 4913 is formed on the same layer as the pixel electrode 4913. A third electrode 4914 made of the same material as the first electrode 4913 is formed. A capacitor element 4919 is formed by a second electrode 4911 and a third electrode 4914. can be.

[0352] A layer 4916 containing an organic compound and a counter electrode 4917 are formed on the pixel electrode 4913. In the region where the layer 4916 containing an organic compound is sandwiched between the base electrode 4913 and the counter electrode 4917, A light emitting element 4920 is formed.

[0353] As described above, the structure of a transistor using a crystalline semiconductor film as a semiconductor layer is shown in FIG. 49. The transistors shown in FIG. 48 and FIG. The structure is an example of a top-gate transistor. That is, the LDD region is The LDD region may overlap with the electrode or may not overlap with the gate electrode. A part of the gate electrode may overlap. Further, the gate electrode may have a tapered shape. The LDD region may be provided in a self-aligned manner below the tapered portion of the electrode. The number of gate electrodes is not limited to two, and may be three or more. That's fine too.

[0354] The semiconductor layer (channel forming region, source region, drain region, etc.) of the transistor constituting the pixel of the present invention By using a crystalline semiconductor film in the semiconductor region, a scanning line driver circuit and a signal line driver circuit can be realized. It is easy to form a part of the signal line driver circuit integrally with the pixel portion. Some of them are formed on the IC chip and mounted with COG or the like as shown in the display panel of Figure 44. By adopting such a configuration, it is possible to reduce the manufacturing cost.

[0355] In addition, the transistor structure uses polysilicon (p-Si:H) for the semiconductor layer. The gate electrode is sandwiched between the semiconductor layer and the substrate. In other words, the gate electrode is located under the semiconductor layer. A bottom gate transistor may be used. FIG. 50 is a partial cross-sectional view of a pixel portion of a display panel to which a transistor is applied.

[0356] As shown in FIG. 50(a), a base film 5002 is formed on a substrate 5001. A gate electrode 5003 is formed on a base film 5002. In the same layer, a first electrode 5004 made of the same material as the gate electrode 5003 is formed. The gate electrode 5003 may be made of polycrystalline silicon doped with phosphorus. Besides polycrystalline silicon, silicide, which is a compound of metal and silicon, may also be used.

[0357] A gate insulating film 5005 is formed so as to cover the gate electrode 5003 and the first electrode 5004. The gate insulating film 5005 is made of a silicon oxide film, a silicon nitride film, or the like. .

[0358] A semiconductor layer is formed on the gate insulating film 5005. The semiconductor layer is a driving transistor. A channel forming region 5006, an LDD region 5007, and a source region or a drain region 5022 An impurity region 5008 which will be a second electrode of the capacitor element 5023 and a channel-shaped The semiconductor device has a channel region 5009, an LDD region 5010, and an impurity region 5011. The formation region 5006 and the channel formation region 5009 may be channel doped. .

[0359] The substrate may be a glass substrate, a quartz substrate, a ceramic substrate, or the like. 5002 includes aluminum nitride (AlN), silicon oxide (SiO2), and silicon oxynitride. (SiO x N y ) or a laminate of these can be used.

[0360] A first interlayer insulating film 5012 is formed to cover the semiconductor layer. The wiring 5013 is in contact with the impurity region 5008 through a contact hole. A third electrode 5014 is formed in the same layer and made of the same material as the wiring 5013 . A capacitor element 5023 is configured by the first electrode 5004, the second electrode, and the third electrode 5014. It has been done.

[0361] An opening 5015 is formed in the first interlayer insulating film 5012. A second interlayer insulating film 50 is formed to cover the stator 5022, the capacitor element 5023, and the opening 5015. 16 is formed, and the pixel electrode 5 is formed on the second interlayer insulating film 5016 through a contact hole. 5017 is formed. Also, an insulator 5018 is formed to cover the end of the pixel electrode 5017. For example, a positive photosensitive acrylic resin film can be used. A layer 5019 containing an organic compound and a counter electrode 5020 are formed on the base electrode 5017. A layer 5019 containing an organic compound is sandwiched between an electrode 5017 and a counter electrode 5020. An optical element 5021 is formed. An opening 5015 is formed below the light emitting element 5021. That is, when the light emitted from the light emitting element 5021 is extracted from the substrate side, Since it has the opening 5015, the transmittance can be increased.

[0362] In FIG. 50(a), a fourth electrode is formed in the same layer as the pixel electrode 5017 using the same material. 5024 may be formed to form the structure shown in FIG. 50(b). Then, the first electrode 50 04, a capacitance formed by the second electrode, the third electrode 5014 and the fourth electrode 5024 Element 5025 can be formed.

[0363] Next, when an amorphous silicon (a-Si:H) film is used for the semiconductor layer of a transistor, This will be explained with reference to Figures 51, 52 and 53.

[0364] Table showing the application of a top-gate transistor that uses amorphous silicon as the semiconductor layer. A partial cross-sectional view of a pixel portion of a display panel is shown in FIG. 51. As shown in FIG. 51(a), A base film 5102 is formed on the substrate 5101. Further, a pixel electrode 5103 is formed on the base film 5102. In addition, a pixel electrode 5103 is formed in the same layer and made of the same material as the pixel electrode 5103. A first electrode 5104 made of a metal oxide film is formed.

[0365] The substrate may be a glass substrate, a quartz substrate, a ceramic substrate, or the like. 5102 includes aluminum nitride (AlN), silicon oxide (SiO2), and silicon oxynitride. (SiO x N y ) or a laminate of these can be used.

[0366] A wiring 5105 and a wiring 5106 are formed on the base film 5102. is covered with the wiring 5105. An N-type conductive type An N-type semiconductor layer 5107 and an N-type semiconductor layer 5108 having wiring Between 5105 and the wiring 5106, a semiconductor layer 5109 is formed on the base film 5102. A part of the semiconductor layer 5109 is connected to the N-type semiconductor layer 5107 and the N-type semiconductor layer 5108. 108. This semiconductor layer 5109 is made of amorphous silicon ( It is made of a semiconductor film having non-crystalline properties such as a-Si:H, microcrystalline semiconductor (μ-Si:H), etc. It is being done.

[0367] A gate insulating film 5110 is formed on the semiconductor layer 5109. An insulating film 5111 made of the same material as the gate insulating film 5110 is formed in the same layer as the first electrode 110. It is also formed on 5104. The gate insulating film 5110 is made of a silicon oxide film or a nitride film. A silicon nitride film or the like is used.

[0368] A gate electrode 5112 is formed on the gate insulating film 5110. A second electrode 5113 made of the same material as the gate electrode 5112 is disposed in the same layer as the first electrode 5112. The insulating film 5111 is formed on the electrode 5104. As a result, the first electrode 51 A capacitor element 5119 having a structure in which an insulating film 5111 is sandwiched between a first electrode 5113 and a second electrode 5113 is formed. In addition, the end of the pixel electrode 5103, the driving transistor 5118 and the capacitance element An interlayer insulating film 5114 is formed to cover the electrode 5119 .

[0369] A layer including an organic compound is formed on the interlayer insulating film 5114 and the pixel electrode 5103 located in the opening of the interlayer insulating film 5114. A layer 5115 and a counter electrode 5116 are formed, and the pixel electrode 5103 and the counter electrode 5116 A light-emitting element 5117 is formed in a region where the layer 5115 containing an organic compound is sandwiched.

[0370] In addition, the first electrode 5104 shown in FIG. 51(a) is replaced with the first electrode 5102 shown in FIG. 51(b). The first electrode 5120 shown in FIG. 51(b) may be formed by wiring 5 It is formed in the same layer as the wirings 5105 and 5106 and is made of the same material as the wirings 5105 and 5106 .

[0371] Next, we applied a bottom-gate transistor that uses amorphous silicon as the semiconductor layer. Partial cross-sectional views of a pixel portion of the display panel are shown in FIGS.

[0372] As shown in FIG. 52(a), a base film 5202 is formed on a substrate 5201. A gate electrode 5203 is formed on the base film 5202. A first electrode 5204 made of the same material as the gate electrode 5203 is formed in the same layer. The gate electrode 5203 may be made of polycrystalline silicon doped with phosphorus. Besides polycrystalline silicon, silicide, which is a compound of metal and silicon, may also be used.

[0373] A gate insulating film 5205 is formed so as to cover the gate electrode 5203 and the first electrode 5204. The gate insulating film 5205 is made of a silicon oxide film, a silicon nitride film, or the like. .

[0374] A semiconductor layer 5206 is formed on the gate insulating film 5205. A semiconductor layer 5207 made of the same material as the semiconductor layer 5206 is formed in the same layer as the semiconductor layer 6 .

[0375] The substrate may be a glass substrate, a quartz substrate, a ceramic substrate, or the like. 5202 includes aluminum nitride (AlN), silicon oxide (SiO2), and silicon oxynitride. (SiO x N y ) or a laminate of these can be used.

[0376] On the semiconductor layer 5206, N-type semiconductor layers 5208 and 5209 having N-type conductivity are formed. An N-type semiconductor layer 5210 is formed on the semiconductor layer 5207 .

[0377] Wirings 5211 and 5212 are formed on the N-type semiconductor layers 5208 and 5209, respectively. In addition, a conductor made of the same material as the wirings 5211 and 5212 is provided in the same layer as the wirings 5211 and 5212. An electrical layer 5213 is formed on the N-type semiconductor layer 5210 .

[0378] As a result, a second semiconductor layer 5207, an N-type semiconductor layer 5210, and a conductive layer 5213 are formed. The second electrode and the first electrode 5204 form a gate insulating film 520. A capacitance element 5220 is formed by sandwiching the capacitor 5 therebetween.

[0379] One end of the wiring 5211 is extended, and the pixel is connected to the upper part of the extended wiring 5211. An electrode 5214 is formed.

[0380] In addition, the end of the pixel electrode 5214, the driving transistor 5219, and the capacitor element 5220 are covered. Insulator 5215 is formed in this manner.

[0381] A layer 5216 containing an organic compound and a counter electrode 5217 are formed on the pixel electrode 5214 and the insulator 5215. 5217 is formed, and the pixel electrode 5214 and the counter electrode 5217 form a layer 52 containing an organic compound. A light emitting element 5218 is formed in the region where 16 is sandwiched.

[0382] The semiconductor layer 5207 and the N-type semiconductor layer 5208 which are to be a part of the second electrode of the capacitor element 5220 In other words, the second electrode of the capacitor 5220 is not necessarily provided with the conductive layer 5213. The structure of the capacitor element 5220 is such that the gate insulating film is formed by the first electrode 5204 and the conductive layer 5213. A sandwiched structure may also be used.

[0383] In FIG. 52(a), the pixel electrode 5214 is formed before the wiring 5211 is formed. As a result, as shown in FIG. 52(b), a pixel electrode 5214 is formed in the same layer as the pixel electrode 5214. The second electrode 5221 can be formed from the same material. A capacitor element 522 having a structure in which a gate insulating film 5205 is sandwiched between the first electrode 5204 and the first electrode 5204. 2 can be formed.

[0384] In addition, FIG. 52 shows an example in which a transistor with an inverted staggered channel etch structure is applied. However, a transistor with a channel protection structure may be used. The case where a transistor having the structure is applied will be described with reference to FIGS.

[0385] The transistor with the channel protection structure shown in FIG. 53(a) is similar to the channel protection structure shown in FIG. The channel of the semiconductor layer 5206 of the driving transistor 5219 having an etched structure is formed. The difference is that an insulator 5301 is provided on the region as an etching mask. Common parts are designated by common symbols.

[0386] Similarly, the transistor having the channel protection structure shown in FIG. The channel of the semiconductor layer 5206 of the driving transistor 5219 having the channel etch structure shown in FIG. The insulating material 5301 that serves as an etching mask is provided on the region where the hole is to be formed. are different, but common symbols are used for other common parts.

[0387] The semiconductor layer (channel forming region, source region, drain region, etc.) of the transistor constituting the pixel of the present invention By using an amorphous semiconductor film for the insulating region, etc., the manufacturing cost can be reduced.

[0388] The structure of a transistor and a capacitor that can be applied to a pixel portion of a display device of the present invention are The structure of the element is not limited to the above-mentioned structure, and various transistor structures and capacitive elements may be used. The following structure can be used:

[0389] This embodiment is a case where the contents (or even a part) described in the other embodiments are embodied. An example of a case where it is slightly modified, an example of a case where it is partially changed, an example of a case where it is improved, Examples of detailed descriptions, examples of applications, examples of related parts, etc. Therefore, the contents described in the other embodiments may be applied or combined with this embodiment. The terms may be freely combined or substituted.

[0390] In this embodiment, various figures have been used to explain the present invention. (or a part of) the contents described in another figure (or a part of) Furthermore, in the figures described above, Each part can be combined with other parts to create more figures. It is possible to do this.

[0391] Similarly, the contents (or even a part) described in each drawing of this embodiment may be applied to the drawings of other embodiments. Please feel free to apply, combine, or replace the contents (or any part) of the above. Furthermore, in the drawings of this embodiment, each part may be represented as a different embodiment. By combining parts of the form, even more figures can be constructed.

[0392] (Embodiment 8) In this embodiment, a method for manufacturing a semiconductor device including a transistor is described. A method for manufacturing a semiconductor device using the process will be described.

[0393] FIG. 54 is a diagram showing a structural example of a semiconductor device including a transistor. FIG. 54(B) corresponds to a cross-sectional view taken along the line ab in FIG. 54(A), and FIG. 54(C) corresponds to a cross-sectional view taken along the line ab in FIG. This corresponds to the cross-sectional view between cd in (A).

[0394] The semiconductor device shown in FIG. 54 is a semiconductor device provided on a substrate 5401 with an insulating film 5402 interposed therebetween. and a gate insulating film 5 on the semiconductor films 5403a and 5403b. A gate electrode 5405 provided through 404 and an insulating film provided to cover the gate electrode 5406, 5407 and the source or drain regions of the semiconductor films 5403a, 5403b A conductive film 5408 is connected to the insulating film 5407 and is provided over the insulating film 5407. In the case of 54, an N-channel transistor is used in which a part of the semiconductor film 5403a is used as a channel region. A P-channel transistor using a transistor 5410a and a part of the semiconductor film 5403b as a channel region. In the example shown, however, the present invention is not limited to this configuration. For example, in FIG. 54, an LDD region is provided in an N-channel transistor 5410a, and a P-channel The LDD region is not provided in the transistor 5410b. Alternatively, a configuration in which neither is provided may be adopted.

[0395] In this embodiment, the substrate 5401, the insulating film 5402, the semiconductor film 5403a and the 403b, the gate insulating film 5404, the insulating film 5406, or the insulating film 5407. By performing a plasma treatment on either one of the layers, a semiconductor film or The insulating film is then oxidized or nitridized to produce the semiconductor device shown in FIG. As described above, the semiconductor film or insulating film is oxidized or nitrided by plasma treatment. The surface of the semiconductor film or insulating film is modified and an insulating film is formed by a CVD method or a sputtering method. It is possible to form a denser insulating film compared to the conventional insulating film, which reduces defects such as pinholes. This makes it possible to improve the characteristics of the semiconductor device.

[0396] In this embodiment, the semiconductor films 5403a and 5403b or the gate electrode in FIG. The gate insulating film 5404 is subjected to plasma treatment, and the semiconductor films 5403a and 5403b are The present invention relates to a method for manufacturing a semiconductor device by oxidizing or nitriding a gate insulating film 5404. This will be described with reference to the drawings.

[0397] First, an edge of an island-shaped semiconductor film provided on a substrate is directly cut. The following shows the case where the mounting is made in a shape close to a corner.

[0398] First, island-shaped semiconductor films 5403a and 5403b are formed on a substrate 5401 (FIG. 55(A) The island-shaped semiconductor films 5403a and 5403b are formed in advance on a substrate 5401. A known method (sputtering, LPCVD, plasma CVD, etc.) is applied to the insulating film 5402. Using this, a material mainly composed of silicon (Si) (e.g., Si x Ge 1-x etc.) etc. are used to An amorphous semiconductor film is formed, the amorphous semiconductor film is crystallized, and the semiconductor film is selectively etched. The amorphous semiconductor film can be crystallized by laser crystallization. The thermal crystallization method using an RTA or furnace annealing furnace, and the metal element that promotes crystallization The crystallization is carried out by a known crystallization method such as a thermal crystallization method using In FIG. 55, the ends of the island-shaped semiconductor films 5403a and 5403b are arranged at right angles. The shape should be close to (θ=85~100°).

[0399] Next, a plasma treatment is performed to oxidize or nitride the semiconductor films 5403a and 5403b. Therefore, the oxide film or nitride film 54 is formed on the surface of the semiconductor film 5403a, 5403b. 21a and 5421b (hereinafter also referred to as insulating films 5421a and 5421b) are formed. (FIG. 55B). For example, when Si is used as the semiconductor films 5403a and 5403b, The insulating film 5421a and the insulating film 5421b are formed of silicon oxide (SiOx) or silicon nitride ( In addition, the semiconductor films 5403a and 5403b are formed by plasma treatment. After oxidation, the film may be nitrided by performing another plasma treatment. Silicon oxide (SiOx) is formed in contact with the conductive films 5403a and 5403b. Silicon oxynitride (SiNxOy) (x>y) is formed on the surface of the substrate. When oxidizing a semiconductor film, the semiconductor film is oxidized in an oxygen atmosphere (for example, oxygen (O2) and rare gas (He , Ne, Ar, Kr, Xe) atmosphere or oxygen and hydrogen (H2) and a rare gas atmosphere or dinitrogen monoxide and a rare gas atmosphere) to perform plasma treatment. When nitriding a semiconductor film by plasma processing, the semiconductor film is nitrided in a nitrogen atmosphere (e.g., nitrogen (N2) and rare gas (containing at least one of He, Ne, Ar, Kr, and Xe) atmosphere or nitrogen Plasma treatment is performed using a rare gas atmosphere (NH3 and hydrogen or NH3 and rare gas). For example, Ar can be used as the gas. Also, a mixture of Ar and Kr can be used. Therefore, the insulating films 5421a and 5421b may be formed of a rare gas (H At least one of the following elements is included: E, Ne, Ar, Kr, and Xe. In the case of using Ar, In this embodiment, insulating films 5421a and 5421b contain Ar.

[0400] In addition, the plasma treatment is performed in an atmosphere of the above gas with an electron density of 1×10 11 cm -3 More than 1×10 13 cm -3 The plasma electron temperature is 0.5 eV to 1.5 eV. The electron density of the plasma is high, and the processing object formed on the substrate 5401 is Since the electron temperature near the semiconductor films 5403a and 5403b is low, the object to be processed In addition, the electron density of the plasma is 1× 10 11 cm -3 Since the density is higher than 100%, the irradiated object can be oxidized or The oxide or nitride film formed by nitriding is formed by CVD or sputtering. It is possible to form a dense film having excellent uniformity in thickness and the like compared to the film formed by the conventional method. In addition, the electron temperature of the plasma is low at 1 eV or less, so compared to conventional plasma processing and thermal oxidation methods, For example, the strain point temperature of a glass substrate can be lower than that of a silicon substrate. Even if plasma treatment is performed at a temperature 100 degrees or more lower than the The frequency used to generate plasma is microwave (2.4 In addition, unless otherwise specified below, the plasma The above conditions are used for the processing.

[0401] Next, a gate insulating film 5404 is formed so as to cover the insulating films 5421a and 5421b (FIG. 55(C)). The gate insulating film 5404 is formed by a known method (sputtering method, LPCVD method, plasma etching method, etc.). Using the Zuma CVD method, silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride Silicon nitride (SiOxNy) (x>y), silicon oxide nitride (SiNxOy) (x>y), etc. The insulating film may have a single layer structure or a laminate structure of the insulating film having nitrogen. For example, the semiconductor films 5403a and 5403b are made of Si, and the Si is converted into By oxidizing the semiconductor films 5403a and 5403b, insulating films 5421a and 5421b are formed on the surfaces of the semiconductor films 5403a and 5403b. When silicon oxide is formed as 5421b, a gate is formed on the insulating films 5421a and 5421b. Silicon oxide (SiOx) is formed as the photoinsulating film. The semiconductor films 5403a and 5403b are oxidized or nitrided by plasma treatment. When the formed insulating films 5421a and 5421b have a sufficient thickness, the insulating film 542 1a and 5421b can also be used as gate insulating films.

[0402] Next, a gate electrode 5405 and the like are formed on the gate insulating film 5404 to form an island-like An N-channel transistor using semiconductor films 5403a and 5403b as a channel region. A semiconductor device having a P-channel transistor 5410a and a P-channel transistor 5410b can be manufactured. This is possible (Figure 55(D)).

[0403] In this manner, before the gate insulating film 5404 is provided on the semiconductor films 5403a and 5403b, The surfaces of the semiconductor films 5403a and 5403b are oxidized or nitrided by plasma treatment. Therefore, the gate insulating film 5404 at the ends 5451a, 5451b, etc. of the channel region It is possible to prevent short circuits between the gate electrode and the semiconductor film caused by poor coverage. When the edge of the island-shaped semiconductor film has a shape close to a right angle (θ=85 to 100°), C When a gate insulating film is formed to cover a semiconductor film by a VD method or a sputtering method, the semiconductor There is a risk of a problem of poor coverage due to a step in the gate insulating film at the edge of the film. By oxidizing or nitriding the surface of the semiconductor film in advance using plasma treatment, This makes it possible to prevent defects such as insufficient coverage of the gate insulating film at the ends of the semiconductor film.

[0404] In addition, in FIG. 55, after forming the gate insulating film 5404, a plasma treatment is performed. The gate insulating film 5404 may be oxidized or nitrided by the above-mentioned method. A gate insulating film 5404 formed to cover 5403a and 5403b (FIG. 56(A)) The gate insulating film 5404 is oxidized or nitrided by performing a plasma treatment on the gate insulating film 5404. An oxide film or a nitride film (hereinafter, also referred to as an insulating film 5423) is formed on the surface of the insulating film 5404. (FIG. 56(B)). The plasma treatment conditions can be the same as those in FIG. 55(B). The insulating film 5523 contains a rare gas used in the plasma treatment, for example, Ar When using this, the insulating film 5523 contains Ar.

[0405] In FIG. 56(B), a plasma treatment is once performed in an oxygen atmosphere to form a gate After the insulating film 5404 is oxidized, a plasma treatment is performed again in a nitrogen atmosphere to form a nitride film. In this case, the semiconductor films 5403a and 5403b may be made of silicon oxide (SiOx). Alternatively, silicon oxynitride (SiOxNy) (x>y) is formed and is in contact with the gate electrode 5405. Silicon oxynitride (SiNxOy) (x>y) is formed. By forming the gate electrode 5405 and the like, the island-shaped semiconductor films 5403a and 5403b are formed. The N-channel transistor 5410a and the P-channel transistor A semiconductor device having a stator 5410b can be manufactured (FIG. 56(C)). Then, the surface of the gate insulating film is oxidized or deoxidized by performing a plasma treatment on the gate insulating film. By nitriding, the surface of the gate insulating film can be modified to form a dense film. The insulating film obtained by plasma treatment is different from that formed by CVD or sputtering. Compared to conventional insulating films, it is dense and has fewer defects such as pinholes, improving transistor characteristics. It can be done.

[0406] In FIG. 56, the semiconductor films 5403a and 5403b are preliminarily subjected to plasma treatment. By carrying out the above process, the surfaces of the semiconductor films 5403a and 5403b are oxidized or nitrided. The case where the gate insulating film is formed without performing plasma treatment on the semiconductor films 5403a and 5403b is shown. A method of performing plasma treatment after forming the film 5404 may be used. By performing plasma treatment before forming the electrode, the gate insulating layer is formed at the edge of the semiconductor film. Even if a coating defect occurs due to a cut in the insulating film, the semiconductor exposed by the coating defect The film can be oxidized or nitrided, so that the gate insulating film coverage at the edge of the semiconductor film can be improved. This makes it possible to prevent defects such as short circuits between the gate electrode and the semiconductor film.

[0407] In this way, even when the edge of the island-shaped semiconductor film is formed at a nearly right angle, the semiconductor film Alternatively, a plasma treatment is performed on the gate insulating film to oxidize or The nitridation process reduces the gate insulating film coverage at the edge of the semiconductor film. This can prevent short circuits between the gate electrode and the semiconductor film.

[0408] Next, in an island-shaped semiconductor film provided on a substrate, an end portion of the island-shaped semiconductor film is tapered. This shows the case where the groove is provided in a groove shape (θ=30 to 85°).

[0409] First, island-shaped semiconductor films 5403a and 5403b are formed on a substrate 5401 (FIG. 57(A) The island-shaped semiconductor films 5403a and 5403b are formed in advance on a substrate 5401. A known method (sputtering, LPCVD, plasma CVD, etc.) is applied to the insulating film 5402. Using this, a material mainly composed of silicon (Si) (e.g., Si x Ge 1-x etc.) etc. are used to An amorphous semiconductor film is formed, and the amorphous semiconductor film is crystallized by laser crystallization, RTA or furnace. The thermal crystallization method using an annealing furnace and the thermal crystallization method using metal elements that promote crystallization are publicly available. The semiconductor film is selectively etched away by a known crystallization method. In FIG. 57, the end of the island-shaped semiconductor film is tapered (θ=3 0~85°).

[0410] Next, a gate insulating film 5404 is formed so as to cover the semiconductor films 5403a and 5403b ( FIG. 57(B). The gate insulating film 5404 is formed by a known method (sputtering method, LPCVD method, plasma CVD method, etc.). Using plasma CVD method, silicon oxide (SiOx), silicon nitride (SiNx), and oxynitride Silicon (SiOxNy) (x>y), silicon oxynitride (SiNxOy) (x>y) Alternatively, the insulating film may have a single layer structure of an insulating film containing nitrogen or a laminated structure of these.

[0411] Next, a plasma treatment is performed to oxidize or nitride the gate insulating film 5404, thereby An oxide film or a nitride film (hereinafter referred to as an insulating film 5424) is formed on the surface of the gate insulating film 5404. (FIG. 57(C)). The plasma treatment conditions are the same as above. For example, the gate insulating film 5404 can be made of silicon oxide (SiOx) or oxynitride (SiOx). When silicon (SiOxNy) (x>y) is used, plasma treatment is performed in an oxygen atmosphere to form a gate. By oxidizing the gate insulating film 5404, the surface of the gate insulating film is Compared with gate insulating films formed by other methods, this method forms a dense film with fewer defects such as pinholes. On the other hand, a gate insulating film 5404 is formed by performing plasma treatment in a nitrogen atmosphere. By nitriding, a silicon oxynitride film is formed on the surface of the gate insulating film 5404 as an insulating film 5424. In addition, the silicon nitride (SiNxOy) (x>y) can be formed by plasma etching in an oxygen atmosphere. After oxidizing the gate insulating film 5404 by performing a plasmon process, the gate insulating film 5404 is again plasmonized under a nitrogen atmosphere. The insulating film 5424 may be nitrided by plasma treatment. For example, when Ar is used, Ar is contained in the insulating film 5424. It is being read.

[0412] Next, a gate electrode 5405 and the like are formed on the gate insulating film 5404 to form an island-like An N-channel transistor using semiconductor films 5403a and 5403b as a channel region. A semiconductor device having a P-channel transistor 5410a and a P-channel transistor 5410b can be manufactured. This is possible (Figure 57(D)).

[0413] In this way, by performing plasma treatment on the gate insulating film, an oxide layer is formed on the surface of the gate insulating film. By providing an insulating film made of a silicon oxide film or a nitride film, the surface of the gate insulating film can be modified. The insulating film that has been oxidized or nitrided by plasma treatment can be used as a CVD or sputtering method. Compared to gate insulating films formed by CVD, they are denser and have fewer defects such as pinholes, making them ideal for transistors. In addition, the end of the semiconductor film can be tapered. This leads to a breakdown of the gate electrode and the semiconductor layer due to poor coverage of the gate insulating film at the edge of the semiconductor layer. This can prevent short circuits in the gate insulating film, but plasma treatment is required after forming the gate insulating film. By carrying out this process, it is possible to further prevent short circuits between the gate electrode and the semiconductor film. do.

[0414] Next, a method for manufacturing a semiconductor device different from that shown in FIG. 57 will be described with reference to the drawings. Specifically, the present invention relates to a case where a plasma treatment is selectively performed on an end portion of a semiconductor film having a tapered shape. Shown below.

[0415] First, island-shaped semiconductor films 5403a and 5403b are formed on a substrate 5401 (FIG. 58(A) The island-shaped semiconductor films 5403a and 5403b are formed in advance on a substrate 5401. A known method (sputtering, LPCVD, plasma CVD, etc.) is applied to the insulating film 5402. Using this, a material mainly composed of silicon (Si) (e.g., Si x Ge 1-x etc.) etc. are used to An amorphous semiconductor film is formed, the amorphous semiconductor film is crystallized, and resists 5425a and 542 The insulating layer 5b can be provided by selectively etching the semiconductor film using the insulating layer 5b as a mask. The amorphous semiconductor film is crystallized by a laser crystallization method, an RTA method, or a furnace annealing method. a thermal crystallization method using a metal element that promotes crystallization, or This can be achieved by known crystallization methods, such as the combined method.

[0416] Next, the resists 5425a and 5425b used for etching the semiconductor film are removed. Before this, plasma treatment is performed to selectively oxidize the ends of the island-shaped semiconductor films 5403a and 5403b. By oxidizing or nitriding the semiconductor films 5403a and 5403b, An oxide film or a nitride film (hereinafter, also referred to as an insulating film 5426) is formed (FIG. 58(B)). The plasma treatment is performed under the above-mentioned conditions. The insulating film 5426 is made of the same material as that used in the plasma treatment. Contains noble gases.

[0417] Next, a gate insulating film 5404 is formed so as to cover the semiconductor films 5403a and 5403b ( FIG. 58(C) The gate insulating film 5404 can be provided in the same manner as described above.

[0418] Next, a gate electrode 5405 and the like are formed on the gate insulating film 5404 to form an island-like An N-channel transistor using semiconductor films 5403a and 5403b as a channel region. A semiconductor device having a P-channel transistor 5410a and a P-channel transistor 5410b can be manufactured. This is possible (Figure 58(D)).

[0419] When the ends of the semiconductor films 5403a and 5403b are tapered, the semiconductor film 5403 The ends 5452a and 5452b of the channel regions formed in parts of 5403a and 5403b are also tapered. Since the thickness of the semiconductor film and the gate insulating film change compared to the central part, This may affect the transistor characteristics. The edge of the channel region is selectively oxidized or nitrided to form a semiconductor layer which will become the edge of the channel region. By forming an insulating film on the body film, the The impact can be reduced.

[0420] In FIG. 58, the plasma treatment is performed only on the ends of the semiconductor films 5403a and 5403b. Although the examples of oxidation or nitridation are shown, the gate insulating film can be used as shown in FIG. It is also possible to oxidize or nitride 5404 by performing plasma treatment (FIG. 60(A) )).

[0421] Next, a method for manufacturing a semiconductor device, which is different from the above, will be described with reference to the drawings. 1 shows a case where a plasma treatment is performed on a semiconductor film having a tapered shape.

[0422] First, island-shaped semiconductor films 5403a and 5403b are formed on a substrate 5401 in the same manner as described above. (Figure 59(A)).

[0423] Next, a plasma treatment is performed to oxidize or nitride the semiconductor films 5403a and 5403b. Therefore, the oxide film or nitride film 54 is formed on the surface of the semiconductor film 5403a, 5403b. 27a and 5427b (hereinafter also referred to as insulating films 5427a and 5427b) are formed. (FIG. 59(B)). The plasma treatment can be carried out under the same conditions as described above. For example, When Si is used as the semiconductor films 5403a and 5403b, the insulating film 5427a and the insulating film Silicon oxide (SiOx) or silicon nitride (SiNx) is formed as 5427b. In addition, after the semiconductor films 5403a and 5403b are oxidized by plasma treatment, they are again In this case, the semiconductor films 5403a and 5403b may be nitrided by a nitrogen treatment. Silicon oxide (SiOx) or silicon oxynitride (SiOxNy) (x>y) is formed in contact with b Silicon oxide nitride (SiNxOy) (x>y) is formed on the surface of the silicon oxide. Therefore, the insulating films 5427a and 5427b contain the rare gas used in the plasma treatment. By performing the plasma treatment, the ends of the semiconductor films 5403a and 5403b are also oxidized at the same time. The material is oxidized or nitrided.

[0424] Next, a gate insulating film 5404 is formed so as to cover the insulating films 5427a and 5427b (FIG. 59(C)). The gate insulating film 5404 is formed by a known method (sputtering method, LPCVD method, plasma etching method, etc.). Using the Zuma CVD method, silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride Silicon nitride (SiOxNy) (x>y), silicon oxide nitride (SiNxOy) (x>y), etc. The insulating film may have a single layer structure or a laminate structure of the insulating film having nitrogen. For example, the semiconductor films 5403a and 5403b are made of Si and oxidized by plasma treatment. As a result, insulating films 5427a and 5427b are formed on the surfaces of the semiconductor films 5403a and 5403b. When silicon oxide is formed as b, a gate insulating film is formed on the insulating films 5427a and 5427b. As a result, silicon oxide (SiOx) is formed.

[0425] Next, a gate electrode 5405 and the like are formed on the gate insulating film 5404 to form an island-like An N-channel transistor using semiconductor films 5403a and 5403b as a channel region. A semiconductor device having a P-channel transistor 5410a and a P-channel transistor 5410b can be manufactured. This is possible (Figure 59(D)).

[0426] When the end of the semiconductor film is tapered, a channel region is formed in a part of the semiconductor film. The ends 5453a and 5453b are also tapered, which may affect the characteristics of the semiconductor element. Therefore, the semiconductor film is oxidized or nitrided by plasma treatment. As a result, the edge of the channel region is also oxidized or nitrided, reducing the impact on the semiconductor element. It can be reduced.

[0427] In FIG. 59, only the semiconductor films 5403a and 5403b are oxidized by plasma treatment. However, as shown in FIG. 57, the gate insulating film 540 may be formed by nitriding. It is also possible to oxidize or nitride the surface of the substrate 4 by performing plasma treatment (FIG. 60(B)). In this case, the gate insulating film 5404 is oxidized by performing plasma treatment in an oxygen atmosphere. After that, the plasma treatment may be performed again in a nitrogen atmosphere to nitride the surface. In this case, the semiconductor films 5403a and 5403b are made of silicon oxide (SiOx) or silicon oxynitride ( SiOxNy) (x>y) is formed, and silicon nitride oxide (Si NxOy) (x>y) is formed.

[0428] In this way, the semiconductor film or the gate insulating film is oxidized or nitrided by the plasma treatment to form a surface By modifying the surface of the insulating film, a dense and high-quality insulating film can be formed. Even when the insulating film is thin, defects such as pinholes are prevented, and semiconductors such as transistors are This makes it possible to realize miniaturization and high performance of semiconductor devices.

[0429] In this embodiment, the semiconductor films 5403a and 5403b or the gate electrode in FIG. The gate insulating film 5404 is subjected to plasma treatment, and the semiconductor films 5403a and 5403b are In the above, the gate insulating film 5404 was oxidized or nitrided, but it was oxidized or nitrided by using plasma treatment. The layer to be nitrided is not limited to this. For example, Alternatively, plasma treatment may be performed on the insulating film 5406 or the insulating film 5407. It is also possible.

[0430] This embodiment is a case where the contents (or even a part) described in the other embodiments are embodied. An example of a case where it is slightly modified, an example of a case where it is partially changed, an example of a case where it is improved, Examples of detailed descriptions, examples of applications, examples of related parts, etc. Therefore, the contents described in the other embodiments may be applied or combined with this embodiment. The terms may be freely combined or substituted.

[0431] In this embodiment, various figures have been used to explain the present invention. (or a part of) the contents described in another figure (or a part of) Furthermore, in the figures described above, Each part can be combined with other parts to create more figures. It is possible to do this.

[0432] Similarly, the contents (or even a part) described in each drawing of this embodiment may be applied to the drawings of other embodiments. Please feel free to apply, combine, or replace the contents (or any part) of the above. Furthermore, in the drawings of this embodiment, each part may be represented as a different embodiment. By combining parts of the form, even more figures can be constructed.

[0433] (Embodiment 9) In this embodiment, a hardware for controlling the driving methods described in the first to sixth embodiments is used. Let's talk about clothing.

[0434] A rough configuration diagram is shown in Fig. 61. On a substrate 6101, a pixel portion 6104, a signal line driver circuit 6106 and a scanning line driver circuit 6105 are arranged. In addition, a power supply circuit and A precharge circuit, a timing generation circuit, etc. may be disposed. The substrate 6106 and the scanning line driver circuit 6105 may not be disposed. The IC may be formed on the substrate 6101. It may be arranged by COG (Chip On Glass). Alternatively, the peripheral circuit Even if an IC is placed on the connection board 6107 that connects the board 6102 and the board 6101, good.

[0435] A signal 6103 is input to the peripheral circuit board 6102. The signal is stored in the memories 6109, 6110, etc. under the control of the In the case of the signal, after analog-to-digital conversion, the memory 6109, 611 0, etc. Then, the controller 6108 stores the memory 6109, 10, etc., is used to output a signal to the substrate 6101.

[0436] In order to realize the driving methods described in the first to sixth embodiments, a controller 6108 It controls the order in which the subframes appear, etc., and outputs a signal to the substrate 6101.

[0437] This embodiment is a case where the contents (or even a part) described in the other embodiments are embodied. An example of a case where it is slightly modified, an example of a case where it is partially changed, an example of a case where it is improved, Examples of detailed descriptions, examples of applications, examples of related parts, etc. Therefore, the contents described in the other embodiments may be applied or combined with this embodiment. The terms may be freely combined or substituted.

[0438] In this embodiment, various figures have been used to explain the present invention. (or a part of) the contents described in another figure (or a part of) Furthermore, in the figures described above, Each part can be combined with other parts to create more figures. It is possible to do this.

[0439] Similarly, the contents (or even a part) described in each drawing of this embodiment may be applied to the drawings of other embodiments. Please feel free to apply, combine, or replace the contents (or any part) of the above. Furthermore, in the drawings of this embodiment, each part may be represented as a different embodiment. By combining parts of the form, even more figures can be constructed.

[0440] (Embodiment 10) In this embodiment, an EL module and an EL television receiver using the display device of the present invention are configured as follows. An example will be described.

[0441] FIG. 62 shows an EL module in which a display panel 6201 and a circuit board 6202 are combined. The display panel 6201 includes a pixel portion 6203, a scanning line driver circuit 6204, and a signal line driver circuit 6205. The circuit board 6202 includes, for example, a control circuit 6206. A display panel 6201 and a circuit board 6202 are formed. are connected by a connection wiring 6208. An FPC or the like can be used for the connection wiring. do.

[0442] The control circuit 6206 is the same as the controller 6108 and the memory 6 109, 6110, etc. Mainly, in the control circuit 6206, It controls the order in which the frames appear.

[0443] The display panel 6201 includes a pixel section and a part of a peripheral driving circuit (a driving circuit having an operating frequency of 100 MHz). The low-power driver circuits are integrated on the substrate using transistors, and some of the peripheral driver circuits (multiple The driving circuit with the highest operating frequency among the several driving circuits is formed on an IC chip, and the IC chip It is recommended to mount the chip on the display panel 6201 using COG (Chip On Glass) or similar. Or, you can use TAB (Tape Automated Bonding) to bond the IC chip. ) or a printed circuit board may be used to mount the display panel 6201.

[0444] In addition, the signals set on the scanning lines and signal lines are impedance-converted by a buffer circuit. This makes it possible to shorten the writing time for each row of pixels, thereby providing a high-resolution display device. It can be provided.

[0445] In order to further reduce power consumption, the pixel area is made of transistors on a glass substrate. Then, all the signal line driver circuits are formed on the IC chip, and the IC chip is mounted on a COG (Ch It may also be implemented on a (ip On Glass) display panel.

[0446] For example, the entire screen of a display panel is divided into several regions, and a part or the whole of the image is displayed in each region. An IC chip that forms all peripheral driving circuits (signal line driving circuits, scanning line driving circuits, etc.) is placed Alternatively, the display panel may be mounted using COG (Chip On Glass) or the like. The configuration of the display panel in this case is shown in Figure 63.

[0447] In Figure 63, the entire screen is divided into four areas, and eight IC chips are used to drive them. The display panel is configured with a substrate 6310, a pixel section 6311, and FPCs 6312a to 6311. 2h, and IC chips 6313a to 6313h. Of the eight IC chips, 6313 Signal line driver circuits are formed in 6313a to 6313d, and scanning lines are formed in 6313e to 6313h. By driving any IC chip, four pixels can be displayed. It is possible to drive only a desired screen area of ​​the surface area. For example, IC chip 6 If you only drive 313a and 6313e, only the top left area of ​​the four screen areas will be driven. By doing so, it is possible to reduce power consumption. become.

[0448] An example of a display panel having another configuration is shown in Fig. 64. The display panel in Fig. 64 has a substrate A pixel section 6421 in which a plurality of pixels 6430 are arranged on a substrate 6420, and a signal from a scanning line 6433 A scanning line driver circuit 6422 controls the signal line 6431. 23. In addition, for correcting the luminance change of the light emitting element included in the pixel 6430, A monitor circuit 6424 may be provided. The light emitting element included in the circuit 6424 has the same structure. A layer containing a material that exhibits electroluminescence is sandwiched between the two.

[0449] At the periphery of the substrate 6420, there are inputs for inputting signals from an external circuit to a scanning line driving circuit 6422. A terminal 6425, an input terminal 6426 for inputting a signal from an external circuit to the signal line driver circuit 6423 , and an input terminal 6429 for inputting a signal to the monitor circuit 6424 .

[0450] In order to make the light emitting element provided in the pixel 6430 emit light, it is necessary to supply power from an external circuit. The power supply line 6432 provided in the pixel portion 6421 is connected to an external circuit via an input terminal 6427. The power supply line 6432 generates resistance loss due to the length of the wiring, so It is preferable to provide a plurality of input terminals 6427 on the periphery of the substrate 6420. The substrate 6420 is provided at both ends thereof so that the luminance unevenness in the pixel portion 6421 is not noticeable. In other words, it prevents one side of the screen from being bright and the other side being dark. In addition, the electrode connected to the power supply line 6432 of the light emitting element having a pair of electrodes is opposite to the electrode connected to the power supply line 6432. The electrode on the opposite side is formed as a common electrode shared by a plurality of pixels 6430. In order to also reduce resistive losses, multiple terminals 6428 are provided.

[0451] In such display panels, the power supply lines are made of low resistance materials such as Cu, so This is effective when the screen size becomes larger. For example, when the screen size is 13 inches The diagonal length is 340 mm, but for a 60-inch class monitor it is 1500 mm or more. In such a case, the wiring resistance cannot be ignored, so a low resistance material such as Cu is used. It is preferable to use the same material as the wiring. Also, in consideration of wiring delay, Alternatively, a scanning line may be formed.

[0452] An EL TV receiver is completed using an EL module with the above panel configuration. FIG. 65 is a block diagram showing the main components of an EL television receiver. The image signal is input to the image signal amplifier circuit 6502. and a video signal processor that converts the output signal into a color signal corresponding to each of the colors red, green, and blue. A control circuit for converting the image signal into the input specifications of the driver circuit. The control circuit 6206 is connected to the scanning line side and the signal line side. In the case of digital driving, a signal division circuit 6207 is provided on the signal line side. In addition, the input digital signal may be divided into M parts and supplied.

[0453] Of the signals received by the tuner 6501, the audio signal is sent to the audio signal amplifier circuit 6504. The output is supplied to a speaker 6506 via an audio signal processing circuit 6505. The line 6507 receives control information for the receiving station (receiving frequency) and the volume from the input unit 6508, The signal is sent to the na 6501 and the audio signal processing circuit 6505.

[0454] The EL module can be installed in a housing to complete a television set. The display unit is formed by the module. Speakers, video input terminals, etc. are also provided as appropriate. It is being done.

[0455] Of course, the present invention is not limited to television receivers, but can be used in a variety of devices, including personal computer monitors. Especially large displays such as information display boards at train stations and airports, and advertising display boards on the street. It can be used for various purposes as a display medium.

[0456] In this way, by using the display device and the driving method thereof according to the present invention, the luminance variation can be reduced. This allows you to see clearer images with reduced noise.

[0457] This embodiment is a case where the contents (or even a part) described in the other embodiments are embodied. An example of a case where it is slightly modified, an example of a case where it is partially changed, an example of a case where it is improved, Examples of detailed descriptions, examples of applications, examples of related parts, etc. Therefore, the contents described in the other embodiments may be applied or combined with this embodiment. The terms may be freely combined or substituted.

[0458] In this embodiment, various figures have been used to explain the present invention. (or a part of) the contents described in another figure (or a part of) Furthermore, in the figures described above, Each part can be combined with other parts to create more figures. It is possible to do this.

[0459] Similarly, the contents (or even a part) described in each drawing of this embodiment may be applied to the drawings of other embodiments. Please feel free to apply, combine, or replace the contents (or any part) of the above. Furthermore, in the drawings of this embodiment, each part may be represented as a different embodiment. By combining parts of the form, even more figures can be constructed.

[0460] (Embodiment 11) Examples of electronic devices using the display device of the present invention include video cameras, digital cameras, goggle-type Displays (head-mounted displays), navigation systems, audio playback devices (Car audio, audio components, etc.), notebook personal computers, game consoles Equipment, portable information terminals (mobile computers, mobile phones, portable game consoles, e-books, etc.), Image reproducing device equipped with a storage medium (specifically, Digital Versatile Di A device equipped with a display that can play storage media such as DVD and display the images. ) and others. Specific examples of such electronic devices are shown in Figure 66.

[0461] FIG. 66(A) shows a self-luminous display, which includes a housing 6601, a support 6602, a display unit, and 6603, a speaker section 6604, a video input terminal 6605, etc. The present invention can be used in the display device constituting the 6603, and the luminance variation is reduced. You can see beautiful images. Because it is a self-luminous type, no backlight is needed. It is not necessary to use a thin display, and the display unit can be thinner than a liquid crystal display. is for all information display devices such as personal computers, TV broadcast receivers, and advertisement displays. The device includes a display device.

[0462] FIG. 66B shows a digital still camera, which includes a main body 6606, a display unit 6607, and an image receiving unit 6 608, operation keys 6609, external connection port 6610, shutter 6611, etc. The present invention can be used in a display device that constitutes the display portion 6607, and the brightness of the display device can be improved by the present invention. This reduces the variation and allows you to see a clear image.

[0463] FIG. 66(C) shows a notebook personal computer, which includes a main body 6612, a housing 6613, Display unit 6614, keyboard 6615, external connection port 6616, pointing mouse 6617, etc. The present invention can be used in a display device that constitutes the display portion 6614, The present invention makes it possible to see clear images with reduced luminance variation. .

[0464] FIG. 66(D) shows a mobile computer, which includes a main body 6618, a display unit 6619, and a switch. 6620, operation keys 6621, infrared port 6622, etc. The present invention can be used in a display device constituting the display device of the present invention, and the luminance variation is reduced by the present invention. You will be able to see beautiful images.

[0465] FIG. 66(E) shows an image reproducing device equipped with a storage medium reading unit (specifically, for example, a DVD reproducing device). A main body 6623, a housing 6624, a display unit A 6625, a display unit B 6626, a memory It includes a medium (DVD, etc.) reading section 6627, operation keys 6628, a speaker section 6629, etc. Display unit A6625 mainly displays image information, and display unit B6626 mainly displays text information. The present invention can be used in a display device that configures the display unit A6625 and the display unit B6626. The present invention allows the user to see clear images with reduced luminance variation. In addition, image reproducing devices equipped with recording media also include home game machines.

[0466] Figure 66(F) shows a goggle-type display (head-mounted display), 630, a display unit 6631, an arm unit 6632, etc. The present invention includes the display unit 6631. The present invention can be used in a display device that displays a clear image with reduced luminance variation. You’ll be able to see the image.

[0467] FIG. 66G shows a video camera, which includes a main body 6633, a display unit 6634, a housing 6635, and an external connection port 6636, remote control receiver 6637, image receiver 6638, battery 6639 The present invention includes a display unit 6634. The present invention can be used in a display device that can display a clear image with reduced luminance variation. You’ll be able to see the image.

[0468] FIG. 66(H) shows a mobile phone, which includes a main body 6642, a housing 6643, a display unit 6644, and an audio input unit. an input unit 6645, an audio output unit 6646, an operation key 6647, an external connection port 6648, The present invention can be used in a display device that configures the display unit 6644. The display unit 6644 displays white characters on a black background to improve the convenience of the mobile phone. The current can be reduced. In addition, the present invention reduces the luminance variation and produces a clear image. You’ll be able to see the image.

[0469] In addition, if a light-emitting material with high luminance is used, the light containing the output image information can be magnified by a lens or the like. It is also possible to project the image using a front or rear projector.

[0470] In recent years, the above electronic devices have become more common due to the increasing use of electricity through the Internet and CATV (cable television). It is becoming common to display information distributed through child communication lines, especially video information. The response speed of light-emitting materials is very fast, making light-emitting devices ideal for displaying moving images. I wish.

[0471] In addition, since the light-emitting parts of an emissive display device consume power, the light-emitting parts are designed to be as small as possible. It is therefore desirable to display information in a way that is easy to understand. When using a light-emitting display device for a display section that mainly displays text information, such as a sound reproduction device, It is desirable to drive the light-emitting portions so that the light-emitting portions form character information with the light-emitting portions as the background.

[0472] As described above, the scope of application of the present invention is extremely wide, and it can be used in electronic devices in all fields. The electronic device of this embodiment can be any of the electronic devices shown in the first to tenth embodiments. Display devices of either configuration may be used. [Explanation of symbols]

[0473] 101 Transistor 102 Transistor 103 Holding capacity 104 scan lines 105 Signal Line 106 Power line 107 Capacitance Line 108 Light emitting element 123 Insulating film 201 Transistor 202 Transistor 203 Holding capacity 204 scan lines 205 Signal Line 206 Power line 207 Capacitance Line 208 Light emitting element 301 Transistor 302 Transistor 303 Transistor 304 Transistor 305 Transistor 306 holding capacity 307 Signal Line 308 1st scan line 309 Second Scan Line 310 3rd scan line 311 4th scan line 312 Power line 313 Power line 314 Capacitive Line 315 Light-emitting element 316 Light-emitting element 801 Transistors 802 Transistor 803 Transistor 804 Transistor 805 Transistor 806 holding capacity 807 Signal Line 808 1st scan line 809 2nd scan line 810 3rd scan line 811 4th scan line 812 Power line 813 Power line 814 Capacitive Line 815 Light-emitting element 2101 Transistor 2102 Transistor 2103 Transistor 2104 Transistor 2105 Transistor 2106 Holding capacity 2107 Signal Line 2108 1st scan line 2109 Second Scan Line 2110 3rd scan line 2111 4th scan line 2112 Power line 2113 Power line 2115 Light emitting element 2121 Transistor 2122 Transistor 2123 Transistor 2124 Transistor 2125 Transistor 2126 Holding capacity 2128 1st scan line 2129 Second Scan Line 2130 3rd scan line 2131 4th scan line 2135 Light emitting element 2149 Second Scan Line 2301 Transistor 2302 Transistor 2303 Transistor 2304 Transistor 2305 Transistor 2306 Holding capacity 2307 Signal Line 2308 1st scan line 2309 Second Scan Line 2310 3rd scan line 2311 4th scan line 2312 Power line 2315 Light emitting element 2321 Transistor 2322 Transistor 2323 Transistor 2324 Transistor 2325 Transistor 2326 holding capacity 2328 1st scan line 2329 Second Scan Line 2330 3rd scan line 2331 4th scan line 2335 Light emitting element 2349 Second Scan Line 2516 Transistor 2517 5th scan line

Claims

[Claim 1] The semiconductor device includes first to sixth P-channel transistors, a capacitor, and a light-emitting element, the light-emitting element is electrically connected to one of the source and the drain of the first transistor, the other of the source and the drain of the first transistor is electrically connected to one of the source and the drain of the second transistor; the other of the source and the drain of the second transistor is electrically connected to one of the source and the drain of the third transistor; the other of the source and the drain of the second transistor is electrically connected to one of the capacitance elements; the other of the source and the drain of the third transistor is electrically connected to a first wiring; the other end of the capacitive element is electrically connected to the first wiring; one of a source and a drain of the fourth transistor is electrically connected to the other of the source and the drain of the first transistor; a gate of the fourth transistor is electrically connected to the other of the source and the drain of the second transistor; one of a source and a drain of the fifth transistor is electrically connected to the other of a source and a drain of the fourth transistor; the other of the source and the drain of the fifth transistor is electrically connected to a second wiring; one of a source and a drain of the sixth transistor is electrically connected to the other of the source and the drain of the fourth transistor; the other of the source and the drain of the sixth transistor is electrically connected to a third wiring.

Images