Display device

Abstract

To provide a display device with high manufacturing yield, and a display device in which color mixing between adjacent pixels is suppressed.SOLUTION: A display device includes a first pixel electrode, a second pixel electrode, a first insulating layer, a second insulating layer, and an adhesive layer. The first insulating layer includes a first opening, and the second insulating layer includes a second opening. The first opening and the second opening are provided between the first pixel electrode and the second pixel electrode. In the top view, the outer periphery of the second opening exists inside the outer periphery of the first opening. The adhesive layer includes a region overlapping with the second insulating layer below the second insulating layer.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] One embodiment of the present invention relates to a display device.

[0002] Note that one embodiment of the present invention is not limited to the above technical fields. The technical field of one embodiment of the present invention is a semiconductor device, a display device, a light-emitting device, a power storage device, a storage device, and a , electronic device, lighting device, input device, input / output device, driving method thereof, or manufacturing method thereof The law can be cited as one example.

[0003] In this specification and the like, a semiconductor device is a device that can function by utilizing semiconductor characteristics. This refers to devices in general. Transistors, semiconductor circuits, arithmetic units, memory devices, etc. are all types of semiconductor devices. In addition, it is also used in imaging devices, electro-optical devices, power generation devices (thin-film solar cells, organic thin-film solar cells, etc.) etc.), and electronic devices may include semiconductor devices. [Background technology]

[0004] Organic EL (Electro Luminescence) elements and liquid crystal elements are used. In addition, display devices using light emitting diodes (LEDs) are also known. Light-emitting devices equipped with light-emitting elements such as a liquid crystal display (LCD) and a liquid crystal display (LCD) using an electrophoretic method Electronic paper that displays information can also be given as an example of a display device.

[0005] The basic structure of an organic EL element is a layer containing a light-emitting organic compound sandwiched between a pair of electrodes. By applying a voltage to this element, light is emitted from the light-emitting organic compound. A display device using such an organic EL element is thin, lightweight, and has high contrast. This makes it possible to realize a reliable and low-power display device.

[0006] Patent Document 1 discloses a flexible light-emitting device using an organic EL element. . [Prior art documents] [Patent documents]

[0007] [Patent Document 1] JP 2014-197522 A Summary of the Invention [Problem to be solved by the invention]

[0008] An object of one embodiment of the present invention is to provide a display device with high manufacturing yield. It is an object of the present invention to provide a display device in which color mixing between adjacent pixels is suppressed. It is an object of the present invention to provide a display device having high performance and a thin display device. Another object of the present invention is to provide a display device that is easy to manufacture. Another object of the present invention is to provide a display device with reduced power consumption. An object of the present invention is to provide a display device with high performance.

[0009] The description of these problems does not preclude the existence of other problems. It is not necessary to solve all of these problems. Problems other than those mentioned above are not necessarily solved. It is possible to extract such information from descriptions in the fine print, etc. [Means for solving the problem]

[0010] One aspect of the present invention is a liquid crystal display device comprising a first pixel electrode, a second pixel electrode, a first insulating layer, and a second insulating layer. The first pixel electrode and the second pixel electrode are disposed on the first insulating layer. The second insulating layer is provided on the first insulating layer, the first pixel electrode, and the second pixel electrode. The adhesive layer is provided on the first insulating layer, the second insulating layer, the first pixel electrode, and the second pixel electrode. The first insulating layer has a first opening, and the bottom surface of the first opening is a first insulating layer. The second insulating layer is located above the bottom surface and has a second opening. The second opening has a second The insulating layer is penetrated to form the first opening, and the first opening and the second opening are , provided between the first pixel electrode and the second pixel electrode, and in top view, The outer periphery is located inside the outer periphery of the first opening, and the adhesive layer is located below the second insulating layer. The display device has a region overlapping with the second insulating layer.

[0011] In the above, the length of the portion of the second insulating layer that protrudes like an eaves on the first insulating layer is A display device in which the thickness is 0.05 μm or more and 5.0 μm or less is also one embodiment of the present invention.

[0012] In the above, the width of the short side of the second opening when viewed from above is 0.5 μm or more and 20 A display device having a resolution of 1 μm or less is also one embodiment of the present invention.

[0013] In addition, the first pixel electrode, the second pixel electrode, the first insulating layer, the second insulating layer, and an adhesive a first pixel electrode and a second pixel electrode are provided on the first insulating layer, and a second The insulating layer is provided on the first insulating layer, the first pixel electrode and the second pixel electrode, and the adhesive layer is A second insulating layer is provided on the first pixel electrode and the second pixel electrode, and the first insulating layer is The first opening has a surface covered with a second insulating layer, and the first opening has a The bottom surface is located above the bottom surface of the first insulating layer, and the first opening includes a first pixel electrode and The second insulating layer is provided between the second pixel electrodes, and the second insulating layer is provided between the first opening and the second pixel electrodes. The adhesive layer has a first protruding portion protruding like an eaves from the upper portion of the side surface, and the adhesive layer is formed below the first protruding portion. A display device having a region overlapping with the second insulating layer is also one embodiment of the present invention.

[0014] In the above, the length of the first protrusion is 0.05 μm or more and 5.0 μm or less. The display device is also one embodiment of the present invention.

[0015] In the above, the first insulating layer contains an organic resin material, and the second insulating layer contains an inorganic insulating material. A display device including the material is also one embodiment of the present invention.

[0016] In the above, the first insulating layer contains acrylic, and the second insulating layer contains silicon oxynitride. A display device including the semiconductor device is also one embodiment of the present invention. Effect of the Invention

[0017] According to one embodiment of the present invention, a display device with high manufacturing yield can be provided. It is possible to provide a display device in which color mixing is suppressed. Alternatively, it is possible to provide a display device with high color reproducibility. Alternatively, a display device having a small thickness can be provided, or a display device that is easy to manufacture can be provided. Alternatively, a display device with reduced power consumption can be provided. Alternatively, a display device with high reliability can be provided. Cut.

[0018] Note that one embodiment of the present invention does not necessarily have all of these effects. Effects other than these can be extracted from the description, drawings, claims, etc. [Brief description of the drawings]

[0019] [Figure 1] 1 shows a configuration example of a display device according to an embodiment. [Diagram 2] 1 shows a configuration example of a display device according to an embodiment. [Diagram 3] 1 shows a configuration example of a display device according to an embodiment. [Figure 4] 1 shows a configuration example of a display device according to an embodiment. [Diagram 5] 1 shows a configuration example of a display device according to an embodiment. [Figure 6] 1 shows a configuration example of a display device according to an embodiment. [Figure 7] 1 shows a configuration example of a display device according to an embodiment. [Figure 8] 1 shows a configuration example of a display device according to an embodiment. [Figure 9] 1 shows a configuration example of a display device according to an embodiment. [Figure 10] 1 shows a configuration example of a display device according to an embodiment. [Figure 11] 1 shows a configuration example of a display device according to an embodiment. [Figure 12] 1 shows a configuration example of a display device according to an embodiment. [Figure 13] 1 shows a configuration example of a display device according to an embodiment. [Figure 14] 1 shows a configuration example of a display device according to an embodiment. [Figure 15] 1 shows a configuration example of a display device according to an embodiment. [Figure 16] 3 shows a configuration example of an input device according to an embodiment. [Figure 17] 4 shows an example of the configuration of electrodes included in the input device according to the embodiment. [Figure 18] 1 shows a configuration example of a display device according to an embodiment. [Figure 19] 1 shows a configuration example of a display device according to an embodiment. [Figure 20] 1 shows a configuration example of a display device according to an embodiment. [Figure 21] 1 shows a configuration example of a display device according to an embodiment. [Figure 22] 1 shows a configuration example of a display device according to an embodiment. [Figure 23] 1 shows a configuration example of a display device according to an embodiment. [Figure 24] 5A to 5C are diagrams illustrating an example of a method for driving an input device according to an embodiment. [Diagram 25] 3 shows an example of a transistor configuration according to the embodiment. [Figure 26] 3 shows an example of a transistor configuration according to the embodiment. [Figure 27] 3 shows an example of a transistor configuration according to the embodiment. [Figure 28] 1A to 1C are diagrams illustrating a display module according to an embodiment. [Figure 29] 1A to 1C are diagrams illustrating electronic devices according to an embodiment. [Diagram 30] 1A to 1C are diagrams illustrating electronic devices according to an embodiment. [Diagram 31] 1A to 1C are diagrams illustrating electronic devices according to an embodiment. [Diagram 32] 1A to 1C are diagrams illustrating electronic devices according to an embodiment. [Diagram 33] 1A to 1C are diagrams illustrating electronic devices according to an embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0020] The embodiment will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention is not limited to the above, and various modifications and variations in form and detail are possible without departing from the spirit and scope of the present invention. It will be readily understood by those skilled in the art that the present invention can be modified in various ways. It should not be construed as being limited to the description of the embodiment modes.

[0021] In the configuration of the invention described below, the same parts or parts having similar functions are The same reference numerals are used in common between different drawings, and the repeated explanations are omitted. When referring to a function, the hatch pattern may be the same and no particular symbol may be used.

[0022] In each figure described in this specification, the size, layer thickness, or area of ​​each component is not clearly indicated. may be exaggerated for clarity and are not necessarily limited to scale .

[0023] In this specification, ordinal numbers such as "first" and "second" are used to avoid confusion of components. The numbers are added for the purpose of convenience and are not intended to be limiting.

[0024] (Embodiment 1) In this embodiment, a structure example of a display device according to one embodiment of the present invention will be described.

[0025] The display device according to one embodiment of the present invention has a plurality of pixels (sub-pixels). Each pixel includes a pixel electrode. The pixel electrode is provided on the first insulating layer, and the second insulating layer is provided on the pixel electrode and and the first insulating layer. Also, on the first insulating layer, the pixel electrode, and the second insulating layer, An adhesive layer is provided.

[0026] In addition, the first insulating layer and the second insulating layer each have an opening between adjacent pixels. The opening (hereinafter referred to as the first opening) provided in the first insulating layer has a first bottom surface. The opening (second opening) is located above the bottom surface of the first insulating layer. The second insulating layer is formed on the first opening by penetrating the second insulating layer.

[0027] The display device may be, for example, a display device having a display element, insulating layers, and an adhesive layer sandwiched between a pair of substrates. For example, one substrate may be provided with pixel electrodes of a display element, and the other substrate may be provided with a pixel electrode. The substrate and the other substrate may be bonded together with an adhesive layer.

[0028] When viewed from above, the outer periphery of the second opening is located inside the outer periphery of the first opening. The adhesive layer has a region that overlaps with the second insulating layer below the second insulating layer. Preferably, the inside of the first opening and the second opening are filled with an adhesive layer. In this case, in a cross-sectional view between adjacent pixels, the first opening and the second opening are integrated. A wedge-shaped (or anchor-shaped or double-ended hammer-shaped) adhesive layer fits into the mouth.

[0029] With this configuration, the adhesion between the first insulating layer and the second insulating layer and the adhesive layer can be improved. For example, when the display device has an EL element as a display element, the pixel voltage can be increased. An EL layer and a conductive film are provided between the electrode, the first insulating layer, the second insulating layer, and the adhesive layer. Since the adhesion at the interface between the EL layer and the conductive film is low, the EL layer and the conductive film face each other. If a force is applied in the opposite direction to the direction of the film, peeling may occur starting from the interface. Peeling can occur during the manufacture of the display, especially when the display is flexible. By having the above-mentioned configuration, the peeling of the film can be suppressed. It is possible to provide a highly efficient display device.

[0030] In addition, by adopting such a configuration, the EL layer is Since the EL element is cut or becomes extremely thin, it is possible to suppress leakage current between adjacent EL elements. That is, the first opening and / or the second opening can suppress color mixing between adjacent pixels. Therefore, it is possible to provide a display device that can display images with high color reproducibility. Cut.

[0031] The display elements are LEDs and OLEDs (Organic Light Emitting Diodes). g Diode) or QLED(Quantum-dot Light Emitti) An element that can control the brightness of the light it emits by controlling the current or voltage, such as a photodiode. can be used.

[0032] A more specific configuration example will be described below with reference to the drawings.

[0033] [Configuration example 1] FIG. 1(A) is a perspective schematic diagram of a display device 10 according to one embodiment of the present invention. The substrate 21 and the substrate 31 are bonded together. In FIG. 1A, the substrate 31 is indicated by a dashed line. It is stated explicitly in.

[0034] The display device 10 includes a display unit 32, a circuit 34, wiring 35, etc. The substrate 21 includes, for example, A circuit 34, wiring 35, a display portion 32, a pixel electrode 23 (see FIG. 1B), and the like are provided. FIG. 1A shows an example in which an IC 43 and an FPC 42 are mounted on a substrate 21. It shows.

[0035] The circuit 34 can be, for example, a circuit that functions as a scanning line driver circuit.

[0036] The wiring 35 has a function of supplying signals and power to the display unit 32 and the circuit 34. Power is input to the wiring 35 from the outside via the FPC 42 or from the IC 43 .

[0037] In FIG. 1A, the substrate 2 is formed by a COG (Chip On Glass) method or the like. 1 is provided with an IC 43. The IC 43 is, for example, a scanning line driving circuit, Alternatively, an IC having a function as a signal line driver circuit or the like can be applied. In some cases, a circuit that functions as a scanning line driver circuit and a signal line driver circuit is provided. A circuit that functions as a signal line driver circuit is provided externally, and the display device 10 is connected to the FPC 42. In cases where a driving signal is input, the IC 43 may not be provided. In addition, IC43 is mounted on FPC42 using the COF (Chip On Film) method, etc. You may do so.

[0038] [Pixel configuration example 1] [Pixel configuration example 1-1] FIG. 1B shows an area 32A, which is a part of the display unit 32, surrounded by a dashed circle in FIG. 1A. FIG. 1B shows only the components of the display unit 32 that are necessary for explanation. is.

[0039] In the display section 32, pixel electrodes 23 of a plurality of display elements are arranged in a matrix. In addition, an opening 11 and an opening 12 are disposed between two adjacent pixel electrodes 23. The outer periphery of the opening 12 is located inside the outer periphery of the opening 11. In FIG. The periphery of the opening 11 covered with the insulating layer 82 (not shown) is indicated by a dashed line, and the opening 12 The periphery of the pixel electrode 23 covered with the insulating layer 82 is indicated by a dashed line. , and the area of ​​the pixel electrode 23 that is not covered with the insulating layer 82 is indicated by hatching.

[0040] In this specification, the term "periphery of the opening" refers to the opening having the smallest area in a top view. For example, a cavity that widens from the top to the bottom. The outer periphery of an opening having such a shape is the outline of the bottom surface of the opening.

[0041] The openings 11 and 12 are formed by two pixel electrodes of two pixels corresponding to different colors. It is preferable that the openings 11 and 12 are arranged between the openings 23 and 23. It may be disposed between two pixel electrodes 23 of two corresponding pixels.

[0042] FIG. 2(A) shows an example of a cross section corresponding to the cutting line A1-A2 in FIG. 1(B). A) shows a cross section of an area including two adjacent pixels. As an example, a top emission type light emitting element 40 is used. Thus, the substrate 31 side becomes the display surface side.

[0043] The display device 10 has a structure in which a substrate 21 and a substrate 31 are bonded together with an adhesive layer 39. The light emitting element 40 can be said to be sealed by the adhesive layer 39. In this case, the display device 10 is a flexible display device. It is located.

[0044] A transistor 70, a light emitting element 40, etc. are provided on the substrate 21. On the other hand, the insulating layer 73, the insulating layer 81, the insulating layer 82, etc. are provided on the substrate 31. On the surface facing the substrate 21, a colored layer 51a, a colored layer 51b, a light-shielding layer 52, etc. are provided. The colored layers 51a and 51b transmit light in different wavelength ranges.

[0045] The transistor 70 includes a conductive layer 71 that functions as a gate, a semiconductor layer 72, and a gate insulating layer the insulating layer 73 serving as a source or a drain; the conductive layer 74a serving as a source or a drain; The second conductive layer 74b functions as the other of the source and drain.

[0046] An insulating layer 81 is provided to cover the transistor 70. In addition, a pixel electrode is formed on the insulating layer 81. The pixel electrode 23 and the conductive layer 74b are connected to an opening provided in an insulating layer 81. Electrical connection is made via the mouth.

[0047] An insulating layer 82 is provided to cover the end of the pixel electrode 23. The insulating layer 82 has a tapered shape. It is preferable that the ion exchange layer 10 has a thickness of 100 nm or less.

[0048] An EL layer 24 and a conductive layer 25 are provided on the pixel electrode 23 to constitute a light emitting element 40. A part of the conductive layer 25 functions as a common electrode of the light-emitting element 40. A potential difference is generated between the pixel electrode 23 and the conductive layer 25, and a current is passed through the EL layer 24, whereby light is emitted. It shines.

[0049] The insulating layer 81 has an opening 11 formed therein, and the insulating layer 82 has an opening 12 formed therein. The bottom surface of the opening 11 is located above the bottom surface of the insulating layer 81. 82 and is integral with the opening 11.

[0050] In the top view, the outer periphery of the opening 12 is located inside the outer periphery of the opening 11 (FIG. 1(B) ) In cross-sectional view, the insulating layer 82 is formed in a shape protruding like an eaves on the insulating layer 81. (See FIG. 2(A)). In addition, since the inside of the opening 11 is filled with the adhesive layer 39, The adhesive layer 39 has a region that overlaps the insulating layer 82 below the insulating layer 82. As shown in FIG. 2A, the adhesive layer 39 has an opening 11 and an opening 12 in a cross-sectional view. It has a wedge shaped area 15 which fits into the integral opening.

[0051] The adhesive layer 39 has the region 15, so that the insulating layer 81 and the insulating layer 82 are bonded to the adhesive layer 39. The inside of the opening 11 is filled with the adhesive layer 39. It is preferable that the adhesive layer 39 is formed in a region below the insulating layer 82 where the adhesive layer 39 overlaps the insulating layer 82. As long as it has a cavity, the present invention is not limited to this, and a part of the opening 11 may be hollow.

[0052] Here, an example of a method for manufacturing the flexible display device 10 will be described. For example, the method includes the following steps: First, a transistor 70 and the like are provided on one of the support substrates. Next, a colored layer (for example, colored layer 51a, colored layer 51b) is provided on the other supporting substrate. One support substrate and the other support substrate are bonded together via an adhesive layer 39 to produce a processed member. Then, a process of peeling the support substrate from the workpiece and then bonding a flexible substrate thereto is performed. The process is performed for both the one support substrate and the other support substrate.

[0053] In the process of peeling the support substrate from the workpiece, two films with weak adhesion come into contact with each other. When a processed component has a laminated structure, the interface between the two films peels off (hereinafter referred to as For example, the EL layer 24 and the conductive layer 25 may be peeled off. Since the adhesiveness between the light-emitting elements 40 and the display device 10 is weak, the display device 10 having the light-emitting elements 40 is manufactured by the above-mentioned manufacturing method. This may cause film peeling between the EL layer 24 and the conductive layer 25, resulting in a decrease in the production yield. Below is a concern.

[0054] In the display device 10 according to the embodiment of the present invention, two pixel electrodes 23 of two adjacent pixels are The region 15 is disposed between the EL layer 24 and the conductive layer 25. The display device has high adhesion between the insulating layer 81, the insulating layer 82 and the adhesive layer 39 and has the above-mentioned flexibility. In the manufacturing method of 10, the EL layer 24 and the conductive layer 25 are arranged in a direction opposite to the direction in which they face each other. It is possible to suppress the peeling of the film that occurs when a force is applied in the opposite direction. According to one embodiment, a display device 10 can be provided with a high manufacturing yield.

[0055] The effect of suppressing the above-mentioned film peeling is as follows: the insulating layer 82 protrudes like an eaves on the insulating layer 81. The length d1 can be determined by the length of the wire (see Fig. 1(B) and Fig. 2(A)). However, when the display device 10 is to be a high-definition display device, It is preferable to make d1 small.

[0056] Therefore, for example, the length d1 is set to 0.05 μm or more and 5.0 μm or less, preferably 0.1 μm or less. By setting the thickness to 1.0 μm or more, the above-mentioned film peeling can be effectively suppressed.

[0057] The effect of suppressing the above-mentioned film peeling is as follows: The width d2 can be defined by the width d2 (see FIG. 1(B) and FIG. 2(A)). In order to make the display device have high resolution, it is preferable to make d2 small. If 2 is too small, the support substrate may be peeled off from the workpiece in the above-mentioned method for producing the display device 10. In the process of removing the region 15 from the adhesive layer 39 above the opening 12, The effect may be lost.

[0058] Therefore, for example, the width d2 is set to 0.5 μm or more and 20 μm or less, preferably 2.0 μm or more and 1.0 μm or less. By setting the thickness to 0 μm or less, the above-mentioned film peeling can be effectively suppressed.

[0059] In FIG. 1B, the opening 11 and the opening 12 are adjacent to each other and correspond to different colors. In other words, two pixels adjacent to each other in the X direction in FIG. 1B have two pixel electrodes. 23, but the present invention is not limited to this. 3(A) and 3(B) may be provided between two pixel electrodes 23 adjacent to each other in the Y direction (FIG. 3(A)). ). In addition, the openings 11 and 12 are adjacent to each other in the X direction, and each of them is On the other hand, the pixel electrodes 23 are provided between two adjacent pixel electrodes 23 on the same side in the Y direction, i.e., between four pixel electrodes 23 in total. (See FIG. 3(B)).

[0060] In addition, the upper surface shape of the opening 11 and the opening 12 is not limited to a rectangle. The opening 12 may be a polygon, a zigzag shape, a meandering shape, a circle, an ellipse, or any other closed shape. In FIG. 4(A) and FIG. 4(B), two adjacent ones in the X direction and The two adjacent pixel electrodes 23 on the same side in the Y direction are arranged between the two adjacent pixel electrodes 23, for a total of four pixel electrodes 23. In this example, the upper surfaces of the openings 11 and 12 are cross-shaped and circular, respectively. An example of how to define d1 and d2 in the configurations shown in Figures 4(A) and 4(B) is shown in the figure. It shows.

[0061] In FIG. 5A, a pixel electrode 23 is provided between two pixels adjacent in the X direction. In this example, two rectangular openings 11 and 12 are arranged side by side. In FIG. 5B, a pixel electrode 23 is provided between two pixel electrodes 23 of two pixels adjacent to each other in the X direction. In this example, the upper surfaces of the openings 11 and 12 are meandering shaped. By configuring the opening 11 and the opening 12 in this manner, the area required for the opening 11 and the opening 12 is increased compared to FIG. 1B, the area of ​​the eaves of the insulating layer 82 (the periphery of the opening 11 and the opening 1 Therefore, the effect of suppressing film peeling can be further improved. It can be made even larger.

[0062] FIG. 2A shows an example in which the EL layer 24 and the conductive layer 25 are formed across a plurality of pixels. The EL layer 24 includes an insulating layer 82 and an insulating layer 83 other than the exposed portion of the pixel electrode 23. The conductive layer 25 is provided on the edge layer 81. The conductive layer 25 is provided to cover the EL layer 24. .

[0063] Here, in a display device having a light-emitting element including an EL layer, the EL layer is provided across a plurality of pixels. In the case where the EL layer is formed in such a manner, if the EL layer has a highly conductive layer, the adjacent In some cases, a current may flow to the light-emitting element of the adjacent pixel. The same is true for layers containing both emissive and non-emissive materials. When the light emitting elements of adjacent pixels emit light, color mixing occurs between the adjacent pixels, and the display device This phenomenon is called crosstalk. You can do it.

[0064] The display device 10 according to one embodiment of the present invention has an opening (opening 11 and The insulating layer 82 is formed on the insulating layer 82 in the opening 12. The insulating layer 81 is formed on the lower surface of the protruding portion and on the side surface of the insulating layer 81. The EL layer 24 is discontinuous. This makes it possible to suppress color mixing between adjacent pixels. Therefore, the display device 10 can perform display with high color reproducibility.

[0065] As shown in FIG. 2A, the EL layer 24 and / or the conductive layer 2 If there is a portion where the EL layer 5 is discontinuous, moisture or the like will penetrate into the EL layer 24 from that portion, causing the surface Therefore, the intrusion of moisture into the EL layer 24 is suppressed. It is preferable to provide an insulating layer 83 on the conductive layer 25 so as to cover the discontinuous portion. The insulating layer 83 is preferably formed by, for example, the opening 11 and the opening 12. The film formation material can be wrapped around the processed parts with deep unevenness. It is preferable to form the thin film by using an atomic layer deposition method (ALD method) that can achieve this.

[0066] The degree of effect of suppressing color mixing between adjacent pixels is, for example, In FIG. 1(B), the length of the long side of the opening 12 is The length L1 is the area of ​​the pixel electrode 23 that is not covered by the insulating layer 82 (in FIG. 1B, In the example shown, the length is smaller than the length L2 of the long side of the area (area shown by the pattern), but the present invention is not limited to this. For example, L1 may be greater than L2 (see FIG. 6(A)). Also, in FIG. 1(B), The multiple openings 11 and 12 shown in FIG. 1(B) are connected in the long axis direction (Y direction in FIG. 1(B)). (See FIG. 6(B)).

[0067] In addition, the opening 11 is provided as shown in FIG. 3(B), and the opening 12 is provided as shown in FIG. 6(B). That is, the openings 11 may be divided into two adjacent openings 11 in the X direction and two adjacent openings 11 in the Y direction. The opening 12 is provided between two adjacent pixel electrodes 23 on the same side, that is, between four pixel electrodes 23 in total, and extends in the Y direction. It may be provided so as to extend (see FIG. 7(A)).

[0068] FIG. 7B shows an example of a cross section corresponding to the cutting line B1-B2 in FIG. 7(A) and 7(B) are different from FIG. 2(A) in that they do not have the opening 11. In the configuration, the EL layer 24 and the conductive layer 2 are disposed between two pixel electrodes 23 adjacent to each other in the X direction. 5 are connected to each other. Therefore, compared to the configuration shown in FIG. The reliability of the system can be improved.

[0069] In this embodiment, the display device 10 is an active device having a transistor 70 and the like as an active element. The following describes the case of a passive matrix display device that does not have active elements. In this case, the transistor 70 is not provided, and for example, For example, the elements located between the pixel electrode 23 and the substrate 21 may be omitted.

[0070] [Pixel configuration example 1-2] FIG. 8A shows an area 32B, which is a part of a display unit 32 having a configuration partially different from that shown in FIG. 1B. FIG. 8(B) shows an enlarged view of the cross section corresponding to the cutting line C1-C2 in FIG. In the configuration shown in FIG. 8A, the size of the opening provided in the insulating layer 81 is different. 1B in that no opening is provided in the insulating layer 82. Among the configurations shown in FIG. 8(A), the same configurations as those in FIG. 1(B) are explained in the same manner as in FIG. 1(B). can be referred to.

[0071] In FIG. 8A, the insulating layer 82 is shown by hatching, and the insulating layer 82 has a step. The portion where the pixel electrode 23 is covered with the insulating layer 82 is shown by a solid line. Not shown.

[0072] In the display section 32, pixel electrodes 23 of a plurality of display elements are arranged in a matrix. An opening 11A is disposed between two adjacent pixel electrodes 23. is formed by covering an opening provided in an insulating layer 81 with an insulating layer 82. 82 is provided to cover the end of the pixel electrode 23 (see FIG. 8(B)). In FIG. 8(A), The outer periphery of the opening 11A is indicated by a dashed line.

[0073] A part of the outer periphery of the opening provided in the insulating layer 81 is located at the end of the pixel electrode 23 in the top view. Therefore, the display device 10 shown in FIG. The insulating layer 82 covering the end of the electrode 23 is covered by the upper part of the side surface of the insulating layer 82 at the opening 11A. The protruding portion 82A shown in FIG. 8(B) is a protruding portion.

[0074] Since the inside of the opening 11A is filled with the adhesive layer 39, the adhesive layer 39 is thicker than the protruding portion 82A. The lower portion of the insulating layer 82 overlaps the insulating layer 83. The adhesive layer 39 has a wedge-shaped region 15A in a cross-sectional view that fits into the opening 11A. By having the region 15A in the layer 39, the adhesion between the insulating layer 82 and the adhesive layer 39 can be improved. can.

[0075] In addition, the insulating layer 82 and the adhesive layer 39 sandwich the EL layer 24 and the conductive layer 25 from above and below. Since the adhesiveness of the film is high, peeling of the film can be prevented in the manufacturing method of the flexible display device described above. That is, according to one embodiment of the present invention, a display device with high manufacturing yield can be obtained. can be provided.

[0076] The magnitude of the effect of suppressing the above-mentioned film peeling is determined by the length d3 of the protrusion 82A. (See FIG. 8(A) and FIG. 8(B)). For example, the length d3 can be set to 0.05 μm or more. By making the thickness 5.0 μm or less, preferably 0.1 μm to 1.0 μm, the above-mentioned film peeling can be prevented. This can be effectively suppressed.

[0077] In addition, in the opening 11A (specifically, inside the opening 11A, under the protrusion 82A) The EL layer 24 provided on the two pixel electrodes 23 is discontinuous on the front and side surfaces. Therefore, color mixing between adjacent pixels can be suppressed, and the display device 10 has high color reproducibility. It is possible to display the information in a clear manner.

[0078] In addition, a part of the outer periphery of the opening 11A roughly coincides with an end of the pixel electrode 23 when viewed from above. Alternatively, the outer periphery of the opening 11A may be provided outside the end of the pixel electrode 23. FIG. 9A shows an opening 11 in which the edge of the pixel electrode 23 and a part of the periphery are generally aligned. FIG. 9B shows an example of a top view in which B is provided. FIG. 9B shows a cut line D1-D2 in FIG. 9A shows an example of a cross section corresponding to the periphery of the pixel electrode 23 and the opening 11B. The periphery is shown by different dashed lines.

[0079] With this configuration, in the opening 11B provided between the two pixel electrodes 23, In this way, the EL layer 24 can be made to have no discontinuous portions, and the display device 10 can be manufactured with high reliability. It is possible to provide a display device with a high image quality.

[0080] In addition, the opening is provided between two pixel electrodes adjacent in the X direction or / and between two pixel electrodes adjacent in the Y direction. Although the above description has been given of an example in which the second insulating film is provided between the pixel electrodes, the present invention is not limited to this. In the portion 32, an opening 11A is provided in a region of the insulating layer 81 where the pixel electrode 23 is not provided. FIG. 10B shows an example of a top view of the display unit 32. An example of a top view in which an opening 11B is provided in a region where no element electrode 23 is provided is shown.

[0081] In the configuration shown in FIG. 10(A) and FIG. 10(B), the opening 11A and the opening 11B are The pixel electrodes 23 can be used as a mask to perform etching. By adopting this configuration, the number of steps in manufacturing the display device 10 can be reduced. With respect to the cutting lines (cutting lines C1-C2 and D1-D2) shown in FIG. 10(A) and FIG. 10(B), The corresponding cross-sectional views are common to FIG. 8(B) and FIG. 9(B), respectively.

[0082] [Pixel configuration example 2] An example of a more detailed cross-sectional configuration of the display device 10 according to one embodiment of the present invention will be described below. Here, we will explain the case where a top-emission type light-emitting element is used as the display element. Reveal.

[0083] [Pixel configuration example 2-1] 11 is a schematic cross-sectional view of the display device 10. In FIG. 11, the FPC in FIG. 42, a region including the circuit 34, a region including the display unit 32, and the outer periphery of the display device 10. 1 shows an example of a cross section of a region including the above.

[0084] The substrate 21 and the substrate 31 are bonded together by an adhesive layer 141. A part of 41 has a function of sealing the light emitting element 40. In addition, on the outer surface of the substrate 31, It is preferable to have a polarizing plate 130 .

[0085] The substrate 21 is provided with a light emitting element 40, a transistor 201, a transistor 202, and a transistor The substrate 31 is provided with a capacitor 205, a capacitance element 203, a terminal portion 204, wiring 35, etc. A colored layer 131a, a light-shielding layer 132, etc. are provided on the side of the light-emitting element 40. The conductive layer 111 has a laminated structure of an EL layer 112 and a conductive layer 113. A portion of the conductive layer 113 functions as a pixel electrode, and a portion of the conductive layer 113 functions as a common electrode. Reference numeral 0 denotes a top emission type light emitting element that emits light toward the substrate 31 side.

[0086] FIG. 11 shows a cross section including one subpixel as an example of the display unit 32. For example, The subpixel includes a transistor 202, a capacitor 203, a transistor 205, and a light-emitting element. For example, the transistor 202 has a switching transistor. The transistor 205 is a selection transistor, and the transistor 205 is a selection transistor. This is a transistor (drive transistor) for controlling current.

[0087] FIG. 11 illustrates a cross section including a transistor 201 as an example of the circuit 34. .

[0088] The display device 10 has colored layers (including the colored layer 131a) each having a different color. A plurality of materials that transmit light can be used. For example, a subpixel that exhibits red, a subpixel that exhibits green, By arranging sub-pixels that show red and sub-pixels that show blue, a full color display can be achieved. do.

[0089] On the substrate 21, an insulating layer 211, an insulating layer 212, an insulating layer 213, an insulating layer 214, and an insulating layer Insulating layers such as insulating layer 81 and insulating layer 82 are provided. Gate insulation of transistors (transistor 201, transistor 202, transistor 205, etc.) The insulating layer 212 functions as a dielectric of the capacitor element 203. The edge layer 213 and the insulating layer 214 are provided to cover the transistors, the capacitor element 203, etc. The insulating layer 214 functions as a planarization layer. In the case where three layers, ie, insulating layer 212, insulating layer 213, and insulating layer 214, are provided as insulating layers covering the above, However, the present invention is not limited to this and may be four or more layers, or may be a single layer or two layers. In addition, the insulating layer 214 functioning as a planarizing layer does not have to be provided if it is not necessary. The insulating layer 81 is provided to cover the conductive layer 224. The insulating layer 81 serves as a planarizing layer. The insulating layer 82 may have a function of insulating the end of the conductive layer 111 or between the conductive layer 111 and the conductive layer 112. 224. The contact portion 224 is provided to cover the contact portion 224.

[0090] In addition, the insulating layer 81 and the insulating layer 82 are provided with an opening 11 and an opening 12, respectively. In top view, the outer periphery of the opening 12 is located inside the outer periphery of the opening 11. The opening 11 and the opening 12 are integrated to form a wedge-shaped opening in a cross-sectional view. The inside of the mouth is filled with an adhesive layer 141 .

[0091] It is preferable that the insulating layers 81 and 82 are made of different insulating materials. Specifically, the insulating layer 81 and the insulating layer 82 are formed by etching with a selectivity (amount of etching per unit time). It is preferable to select a combination of insulating materials with different thicknesses (film loss amounts). For example, the insulating layer 81 contains an organic resin material such as acrylic or polyimide, and the insulating layer 82 contains a nitriding agent. The insulating material includes inorganic insulating materials such as silicon oxide and silicon nitride.

[0092] After the opening 12 is formed in the insulating layer 82, etching proceeds not only in the depth direction but also in the surface direction. By performing etching with a high selectivity of organic resin material to inorganic material, an opening is formed. An opening 11 having a circumference larger than that of the portion 12 can be formed in the insulating layer 81. An example of the method is ashing using oxygen plasma.

[0093] It is preferable that the etching is isotropic. As a result, the opening 11, which has a larger circumference than the opening 12, can be formed with a smaller depth. Therefore, the thickness of the insulating layer 81 can be reduced.

[0094] In addition, the transistors 201, 202, and 205 are partially A conductive layer 221 functions as a gate electrode, and a part of the conductive layer 221 functions as a source electrode or a drain electrode. The conductive layer 222 and the semiconductor layer 231 are formed by processing the same conductive film. The same hatching pattern is applied to multiple layers.

[0095] In FIG. 11, the capacitor 203 is a conductive layer that functions as a gate electrode of the transistor 205. A portion of layer 221, a portion of insulating layer 211, and the source electrode or drain electrode of transistor 205. 2 shows an example in which the conductive layer 222 is configured as a part of the conductive layer 222 that functions as a conductive electrode.

[0096] The pair of conductive layers 222 of the transistor 202 is electrically connected to the capacitor 203. The conductive layer 222 that is not connected to the transistor 202 functions as a part of a signal line. The conductive layer 221 which functions as a gate electrode of the gate electrode functions as a part of the scanning line.

[0097] In FIG. 11, an example of the transistor 202 is a transistor having one gate electrode. In addition, the transistor 201 and the transistor 205 have a channel region. The semiconductor layer 231 to be formed is sandwiched between two gate electrodes (conductive layer 221 and conductive layer 223). In this way, a transistor with two gate electrodes is In addition, the threshold voltage can be controlled more reliably by connecting the two gate electrodes. The transistors may be driven by supplying the same signal to these. Such a transistor can increase the on-current compared to other transistors. As a result, it is possible to fabricate circuits capable of high-speed operation. Furthermore, the area occupied by the circuit can be reduced. By using transistors, the number of wirings increases when the display device is made larger or has higher resolution. Even if the signal delay in each wiring is large, it is possible to reduce the signal delay in each wiring. If this is done, the display unevenness can be improved.

[0098] Note that the transistors (transistor 201, etc.) included in the circuit 34 and the The transistors (transistor 202, transistor 205, etc.) may have the same structure. In addition, the multiple transistors in the circuit 34 may all have the same structure. Transistors having different structures may be used in combination. The transistors may all have the same structure, or may be a combination of transistors with different structures. They may also be used in combination.

[0099] At least one of the insulating layers 212 and 213 that cover the transistors is resistant to water and It is preferable to use a material that is difficult for impurities such as hydrogen to diffuse. This allows each transistor to function as a rear film. The diffusion of impurities can be effectively suppressed, realizing a highly reliable display device 10 can.

[0100] The conductive layer 224 provided over the insulating layer 214 functions as a wiring. 4 is connected to the transistor through openings provided in the insulating layers 214, 213, and 212. The insulating layer 81 is electrically connected to one of the source and drain of the transistor 205. A conductive layer 111 that functions as a pixel electrode is provided on the insulating layer. 81 is electrically connected to one of the conductive layers 224 through an opening formed in the conductive layer 224. In this example, the conductive layer 111 is connected to the source or drain of the transistor 205 through the conductive layer 224. The first and second electrodes are electrically connected to each other.

[0101] An insulating layer 82 is provided to cover the end of the conductive layer 111. The EL layer 112 is The conductive layer 113 is disposed on the EL layer 111, the insulating layer 81, and the insulating layer 82. The EL layer 112 is disposed over the two conductive layers 111. Each of the conductive layer 112 and the conductive layer 113 is discontinuous in the opening 11 .

[0102] In the light-emitting element 40, the conductive layer 111 is made of a material that reflects visible light, and the conductive layer 113 is made of a material that reflects visible light. With this configuration, the light emitting element 31 emits light toward the substrate 31 side. The top emission type light emitting element can be a top emission type light emitting element. Since it is possible to place elements such as transistors and capacitors underneath, Note that if both the conductive layer 111 and the conductive layer 113 have a thickness that transmits visible light, the efficiency can be increased. By using a material that can emit light on both the substrate 31 side and the substrate 21 side, a dual emission type is achieved. The light emitting element may be a silicon type light emitting element.

[0103] Moreover, a light emitting element that exhibits white light can be suitably used as the light emitting element 40. This eliminates the need to create separate light-emitting elements 40 for the sub-pixels corresponding to different colors. A very high-definition display device 10 can be realized. At this time, the light from the light emitting element 40 passes through the colored layer When passing through 131a, etc., light other than the specific wavelength region is absorbed. The emitted light is, for example, red light.

[0104] In addition, a material that reflects visible light is used for the conductive layer 111, and a material that is semi-transparent to visible light is used for the conductive layer 113. A material having transparency and semi-reflection is used, and a visible light is provided between the conductive layer 111 and the conductive layer 113. By providing an optical adjustment layer that transmits light, the light emitting element 40 having a microcavity structure can be formed. In this case, optical adjustment may be performed for each of a plurality of sub-pixels corresponding to different colors. The thickness of the layer can be adjusted. Sub-pixels may be mixed.

[0105] A light-shielding layer 132 is provided on the surface of the substrate 31 facing the substrate 21. The colored layers 131a and the like are provided to cover the openings of the layer 132. The light-shielding layer 132 is disposed so as to overlap the light-emitting element 40. are arranged one on top of the other.

[0106] FIG. 11 shows an example in which a polarizing plate 130 is provided on the surface of the substrate 31 opposite to the substrate 21 side. It is preferable to use a circular polarizing plate as the polarizing plate 130. For example, a laminate of a linear polarizing plate and a quarter-wave retardation plate can be used. As a result, reflection of external light by a reflective member (for example, the conductive layer 111, etc.) provided on the display unit 32 is suppressed. It can be suppressed.

[0107] FIG. 11 shows an example in which the light emitting element 40 is sealed with an adhesive layer 141. By using a material with a refractive index larger than that of air, a space is formed between the light emitting element 40 and the substrate 31. In comparison with the case where the light emitting element 40 has a light extracting efficiency, the light extracting efficiency can be improved.

[0108] In addition, a so-called hollow sealing structure may be used in which the adhesive layer 141 is disposed around the display section 32. At this time, the space formed by the substrate 21, the substrate 31, and the adhesive layer 141 is filled with air. The gas may be filled with an inert gas such as a rare gas or nitrogen gas. In addition, if the space is decompressed relative to atmospheric pressure in a steady state, the operating environment (e.g. , air pressure, and temperature) and causing the substrate 21 or 31 to swell. On the other hand, if the space is at a positive pressure relative to atmospheric pressure, impurities such as moisture may enter the substrate 21 and the substrate 22. 31, adhesive layer 141, or gaps therebetween, can be prevented from diffusing into the space.

[0109] A terminal portion 204 is provided in an area near the end of the substrate 21. The wiring is electrically connected to the FPC 42 via the interconnect layer 242. 35 and a conductive layer 111 are laminated to form a terminal portion 204.

[0110] 11 shows an example of a cross section of a region including the outer periphery of the display device 10. At the periphery of device 10, openings 219 are provided in insulating layers 214 and 81. The opening 219 is provided so as to surround the display unit 32 when viewed from above.

[0111] Acrylic, polyimide, and other organic resins can be applied to the substrate using a coater. Therefore, a film with high flatness can be obtained. The organic resin can be suitably used for the insulating layer 81. On the other hand, the organic resin has a higher thermal conductivity than inorganic insulating materials. Therefore, by providing an opening 219 so as to surround the display unit 32, This can prevent impurities such as water from entering the inside of the display device 32, thereby improving the reliability of the display device 10. It is possible to provide a highly efficient display device.

[0112] When the above organic resin material is used for the insulating layer 82, the insulating layer 82 also has the opening 2. It is preferable to provide an opening in the region overlapping with the insulating layer 214. If a material with low water permeability is used for the edge layer 81, the opening 219 does not need to be provided.

[0113] This concludes the description of pixel configuration example 2-1.

[0114] [Pixel configuration example 2-2] FIG. 12 shows a display device using a pair of flexible substrates 171 and 181. 12 shows an example of a cross-sectional configuration of the display device 10. The display device 10 shown in FIG. 12 has a display surface that can be partially bent. can.

[0115] The display device 10 shown in FIG. 12 has a substrate 171 instead of the substrate 21 in FIG. 72, and an insulating layer 173. Also, instead of the substrate 31, a substrate 181, an adhesive layer 182, and an insulating layer 183.

[0116] The insulating layer 173 and the insulating layer 183 may be made of a material that is resistant to the diffusion of impurities such as water. preferable.

[0117] In the display device 10 shown in FIG. 12, the insulating layers 173 and 183 are provided to insulate the transistors. (transistor 201, transistor 202, transistor 205, etc.) and light emitting element 40 In this way, the substrate 171, the substrate 181, the adhesive layer 172, and the adhesive Even if the deposition layer 182 or the like is made of a material that easily diffuses impurities such as water or hydrogen, The insulating layer 173 and the insulating layer 183 located on the inner side (the transistors and the light emitting element 40 side) This prevents these impurities from diffusing into the insulating layer 173 or the insulating layer 183. Therefore, the reliability of the display device 10 can be improved. When selecting materials for the adhesive layers 172 and 182, the diffusibility of impurities must be taken into consideration. Since there is no need for a

[0118] FIG. 12 shows an example in which the display device 10 does not have an opening 219 on the outer periphery.

[0119] [Example of manufacturing method] Here, a method for manufacturing a flexible display device will be described.

[0120] For the sake of convenience, the term "layer structure including pixels and circuits, optical components such as colored layers (color filters)" is used here. The laminated structure including the material and the electrodes and wiring that make up the touch sensor are summarized as follows. The element layer includes, for example, a display element. Even if the device has wiring that electrically connects to the elements, and elements such as transistors used in pixels and circuits, good.

[0121] In addition, in this embodiment, a flexible member (e.g., The substrates (substrate 171, substrate 181, etc.) are referred to as substrates. This also includes extremely thin films with thicknesses of 10 nm to 200 μm.

[0122] Representative methods for forming an element layer on a substrate having a flexible insulating surface include There are two methods for forming the device layer on the substrate. The other is to form an element layer on a support substrate different from the substrate, and then peel the element layer from the support substrate. The method is to separate the element layer from the substrate and then transfer the separated element layer to a substrate.

[0123] If the material constituting the substrate is heat resistant to the heat applied in the process of forming the element layer, It is preferable to form the element layer directly on the substrate, since the process is simplified. If the element layer is formed while the plate is fixed to the support substrate, the plate can be easily transported within and between devices. This is preferable because it is easier.

[0124] In addition, in the case of using a method in which an element layer is formed on a support substrate and then transferred to the substrate, first, A release layer and an insulating layer are laminated over a supporting substrate, and an element layer is formed over the insulating layer. The element layer is peeled off from the substrate and transferred to the substrate. A material that causes peeling to occur at the interface of the insulating layer or in the peeling layer may be selected. By using a material having high heat resistance for the support substrate and the peeling layer, the temperature applied when forming the element layer can be reduced. This is advantageous because it is possible to increase the upper limit of the degree of oxidation and form an element layer having elements with higher reliability. I wish.

[0125] For example, a layer containing a high melting point metal material such as tungsten as a peeling layer and a layer containing the metal material A layer containing an oxide of silicon nitride or silicon oxide nitride is laminated as an insulating layer on the peeling layer. It is preferable to use a multi-layer structure including silicon, silicon oxide nitride, etc. In this document, oxynitride refers to a material whose composition contains more oxygen than nitrogen. The term "nitride oxide" refers to a material whose composition contains more nitrogen than oxygen.

[0126] The element layer and the support substrate can be separated by applying a mechanical force or by etching the separation layer. Examples of such methods include etching the surface of the peeled material or allowing a liquid to penetrate the peeled surface. Alternatively, the difference in thermal expansion between the two layers that form the peel interface can be utilized by heating or cooling. Peeling may also be performed.

[0127] Furthermore, if peeling is possible at the interface between the support substrate and the insulating layer, there is no need to provide a peeling layer.

[0128] For example, glass is used as the support substrate, and an organic resin such as polyimide is used as the insulating layer. At this time, a part of the organic resin is locally heated using a laser beam or the like. The peeling occurs when a sharp object is used to physically cut or penetrate a part of the organic resin. A point may be formed and peeling may be performed at the interface between the glass and the organic resin.

[0129] Alternatively, a heat generating layer is provided between a support substrate and an insulating layer made of an organic resin, and the heat generating layer is heated. In this way, the heat generating layer and the insulating layer may be peeled off at their interface. Materials that generate heat when current flows, materials that generate heat when light is absorbed, and materials that generate heat when a magnetic field is applied. For example, the heat generating layer may be made of The material to be used can be selected from the group consisting of semiconductors, metals, and insulators.

[0130] In the above-mentioned method, the insulating layer made of organic resin is used as a substrate after peeling. It is possible.

[0131] For example, in the case of the configuration shown in FIG. 12, a first release layer and an insulating layer 173 are formed on a first support substrate. After forming the first support, the upper structure is formed. After forming the second release layer and the insulating layer 183 in this order on the support substrate, the structure above them is Next, the structure on the first support substrate and the structure on the second support substrate are bonded to each other by an adhesive layer 14. 1. Then, the second support substrate and the second release layer are bonded to each other by insulating the second release layer. The insulating layer 183 and the substrate 181 are removed by peeling at the interface of the adhesive layer 183. 2. The first support substrate and the first release layer are bonded to each other by the first release layer and the insulating layer. The insulating layer 173 and the substrate 171 are removed by peeling at the interface 173. The peeling and bonding are performed by pressing the first support substrate side and the second support substrate side. Either side may go first.

[0132] The above is a description of the method for manufacturing a flexible display device.

[0133] [Pixel configuration example 2-3] FIG. 13 shows an example of a cross-sectional configuration of a display device 10 having a configuration that is partially different from that shown in FIG. The display device 10 shown in FIG. 3 uses a pair of flexible substrates 171 and 181. 11 in that it has a polarizing plate 130, does not have a polarizing plate 130, and has a structure 135. This is different from the display device 10.

[0134] The method for producing the display device 10 is as follows: an element layer is provided between the adhesive layer 141 and the substrate 21 in FIG. The first support substrate is provided with a device layer between the adhesive layer 141 and the substrate 31. The bonding step includes a step of bonding the substrate to a supporting substrate via an adhesive layer 141. The adhesive that becomes the adhesive layer 141 is applied to the surface of the element layer provided on the first support substrate or the surface of the second support substrate. The adhesive is applied to the surface of the element layer provided on the substrate, and the surfaces of the element layers are overlapped to form the adhesive. After filling the gap between the first support substrate and the second support substrate with an adhesive, the adhesive is cured. conduct.

[0135] When the adhesive is filled between the first support substrate and the second support substrate, the first support substrate is The surface of the device layer provided on the second support substrate or the surface of the device layer provided on the second support substrate is, for example, an opening 2. When the surface has a large uneven shape with large steps like 19, the adhesive fills the spaces formed by the uneven shape. It may not be possible to completely fill the area, and gaps may occur between the uneven surface and the adhesive. When the support substrate is peeled off as described in the above-mentioned manufacturing method example, the film is formed from the void. Peeling may occur.

[0136] In the display device 10 shown in FIG. 13, the structure 135 includes an opening 219 on the substrate 171 and The structure 135 is provided at an overlapping position. When viewed from above, the outer periphery of the structure 135 is defined by the opening 219. It is preferable that the structure 135 is provided so as to be located inside the outer periphery of the structure 135. It is preferable that 1 is greater than half the depth t2 of the opening 219 and smaller than t2.

[0137] With this configuration, the cell gap of the display device 10 in the vicinity of the opening 219 (The distance between the opposing surfaces of the substrate 171 and the substrate 181) can be prevented from suddenly changing. Therefore, the adhesive can be filled into the opening 219. It is possible to provide a display device with high retention.

[0138] The material of the structure 135 is not particularly limited, but may be, for example, acrylic, polyimide, or epoxy. Resins such as the above can be used.

[0139] In addition, the structure 135 may be covered with a material having low water permeability, or the structure 135 may be covered with a material having low water permeability. By forming the adhesive layer 141 from the material, the amount of moisture that penetrates into the EL layer 112 through the adhesive layer 141 can be reduced. As a result, the display device 10 can be made highly reliable. 1 shows an example of a cross-sectional view of a display device 10 in which 135 is covered with an insulating layer 136. For this, a material similar to that of the insulating layer 212 or the insulating layer 213 can be used.

[0140] In place of the structure 135, a colored layer may be provided at a position overlapping the opening 219. In FIG. 15, a colored layer 131a and a colored layer 131b are provided at positions overlapping the opening 219. With this configuration, in the process of forming a colored layer on the display unit 32, In order to form a structure having the same function as the structure 135 at a position overlapping the opening 219, Therefore, the number of steps in manufacturing the display device 10 can be reduced. 2, the coloring layer 131a is used for the sub-pixel having a different color from the sub-pixel having the coloring layer 131a. It is a layer.

[0141] [About each component] Each of the above components will be described below.

[0142] 〔substrate〕 The substrate of the display device 10 may be made of a material having a flat surface. The substrate on the side from which the light is extracted is made of a material that transmits the light. For example, glass or quartz is used. Materials such as ceramic, sapphire, and organic resin can be used.

[0143] By using a thin substrate, the display device 10 can be made lighter and thinner. Furthermore, by using a substrate having a thickness sufficient to provide flexibility, a flexible display device 10 can be obtained. This can be achieved.

[0144] In addition, the substrate on the side from which light is not extracted does not need to have light-transmitting properties. In addition to the above mentioned substrate materials, metal substrates can be used. Metal substrates have high thermal conductivity and Since heat can be easily conducted to the entire plate, local temperature rise of the display device 10 can be suppressed. In order to obtain flexibility and bendability, the thickness of the metal substrate is preferably 10 μm or more and 20 0 μm or less is preferable, and 20 μm or more and 50 μm or less is more preferable.

[0145] The material constituting the metal substrate is not particularly limited, but examples thereof include aluminum, copper, and nickel. Metals such as nickel, or alloys such as aluminum alloys and stainless steel are preferably used. It is possible.

[0146] In addition, the surface of the metal substrate is oxidized or an insulating layer is formed on the surface, thereby performing insulation treatment. For example, a substrate that has been subjected to an anodic oxidation treatment may be used. An oxide film may be formed on the surface of the substrate by a method such as chemical vapor deposition, or by a method such as spin coating or dip coating. An insulating layer is formed by using a coating method such as a deposition method, an electrodeposition method, a vapor deposition method, a sputtering method, or the like. Good too.

[0147] Examples of materials having flexibility and transparency to visible light include materials having flexibility. Thickness of glass, polyethylene terephthalate (PET), polyethylene naphthalate Polyester resins such as (PEN), polyacrylonitrile resins, polyimide resins, methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PE S) Resin, polyamide resin, cycloolefin resin, polystyrene resin, polyamide imide resin, polyvinyl chloride resin, polytetrafluoroethylene (PTFE) resin, etc. In particular, it is preferable to use a material with a low thermal expansion coefficient. ×10 -6 Polyamide-imide resin, polyimide resin, PET, etc., with a molecular weight of 0.1 to 1.0 kg / K or less, are preferably used. In addition, it is possible to use a substrate in which glass fibers are impregnated with organic resin, or an organic substrate in which inorganic fillers are It is also possible to use a substrate with a lower thermal expansion coefficient by mixing it with resin. Since the substrate is light in weight, the display device using the substrate can also be made light in weight.

[0148] When the material contains a fibrous material, the fibrous material may be an organic compound or an inorganic compound. High-strength fibers are used. Specifically, high-strength fibers have a high tensile modulus or Young's modulus. This refers to fibers, and typical examples are polyvinyl alcohol fibers and polyester fibers. , polyamide fibers, polyethylene fibers, aramid fibers, polyparaphenylene benzo Examples of the glass fiber include bisoxazole fiber, glass fiber, and carbon fiber. Examples of glass fibers include those made from E glass, S glass, D glass, and Q glass. A structure made by using the fiber in a woven or nonwoven state, impregnating the fiber with resin, and then hardening the resin. As the flexible substrate, a fibrous body and a resin may be used. The use of a structure made of this improves reliability against damage caused by bending or localized pressure. ,preferable.

[0149] Alternatively, glass, metal, or the like that is thin enough to be flexible may be used as the substrate. Alternatively, a composite material in which glass and a resin material are bonded together with an adhesive layer may be used.

[0150] A hard coat layer (e.g. For example, silicon nitride, aluminum oxide, etc.) or a layer of material capable of dispersing pressure (for example, Aramid resin, etc. may be laminated. In addition, the life of the display element may be shortened due to moisture, etc. In order to prevent deterioration, a flexible substrate may be laminated with an insulating layer having low water permeability. For example, silicon nitride, silicon oxynitride, silicon nitride oxide, aluminum oxide, An inorganic insulating material such as aluminum nitride can be used.

[0151] The substrate may be formed by laminating a plurality of layers. In particular, the substrate may have a glass layer. This improves the barrier properties against water and oxygen, making it possible to provide a highly reliable display device 10. do.

[0152] [Transistor] The transistor includes a conductive layer functioning as a gate electrode, a semiconductor layer, and a A conductive layer that functions as a drain electrode and a conductive layer that functions as a gate insulating layer. The above describes the case where a bottom-gate transistor is used. is.

[0153] Note that the structure of a transistor included in a touch panel according to one embodiment of the present invention is not particularly limited. For example, the transistor may be a planar type transistor or a staggered type transistor. Alternatively, a top-gate or bottom-gate transistor may be used. The transistor may have either a gate type or a gate type. A gate electrode may be provided.

[0154] [Semiconductor Layer] The crystallinity of the semiconductor material used in the transistor is not particularly limited. A semiconductor having crystallinity (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor having a partially crystalline region) If a semiconductor having crystallinity is used, the This is preferable because it is possible to suppress deterioration of the electrical characteristics of the transistor.

[0155] In addition, the semiconductor layer of the transistor may contain, for example, elements of Group 14 (silicon, germanium, etc.). Semiconductor materials such as semiconductors, compound semiconductors, and oxide semiconductors can be used. The semiconductor may be a semiconductor containing silicon, a semiconductor containing gallium arsenide, or an oxide semiconductor containing indium. It can be applied to the body, etc.

[0156] In particular, it is preferable to use an oxide semiconductor having a larger band gap than silicon. Using semiconductor materials with a larger band gap and lower carrier density than silicon. This is preferable because it is possible to reduce the current in the off state of the transistor.

[0157] In particular, the semiconductor layer of the transistor has a plurality of crystal parts, and the crystal parts have c-axes A crystal portion that is oriented substantially perpendicular to a surface on which the semiconductor layer is formed or an upper surface of the semiconductor layer and is adjacent to the surface. It is preferable to use an oxide semiconductor in which grain boundaries are difficult to identify between the oxide semiconductor and the semiconductor layer.

[0158] Such an oxide semiconductor does not have crystal grain boundaries, and therefore, when the display panel is curved, Therefore, the occurrence of cracks in the oxide semiconductor film due to the stress can be suppressed. Such oxide semiconductors are suitable for use in touch panels that are flexible and can be curved when used. can be used.

[0159] In addition, when such an oxide semiconductor having crystallinity is used for a semiconductor layer of a transistor, This suppresses fluctuations in the electrical characteristics of the transistor, resulting in highly reliable transistors. can.

[0160] In addition, a transistor using an oxide semiconductor with a larger band gap than silicon for the semiconductor layer has been developed. The low off-state current of the transistor reduces the charge stored in the capacitance connected in series with the transistor. This type of transistor can be applied to pixels. This allows the driver circuit to be stopped while maintaining the gradation of the image displayed in each display area. As a result, it is possible to realize a display device 10 with extremely reduced power consumption.

[0161] The semiconductor layer of the transistor may be, for example, at least indium, zinc, and M (aluminum). Umium, titanium, gallium, germanium, yttrium, zirconium, lanthanum, and selenium It is represented by In-M-Zn oxides containing metals such as indium, tin, neodymium or hafnium. In addition, it is preferable that the electric characteristics of a transistor using the oxide semiconductor be improved. It is preferable to include stabilizers therewith to reduce variability.

[0162] The stabilizer may be, for example, gallium, tin, or the like, which is included in the metals described under M above. Hafnium, aluminum, or zirconium are some of the stabilizers. The lanthanides are lanthanum, cerium, praseodymium, neodymium, and samarium. , europium, gadolinium, terbium, dysprosium, holmium, erbium , thulium, ytterbium, lutetium, etc.

[0163] As an oxide semiconductor constituting the semiconductor layer of a transistor, for example, an In-Ga-Zn system Oxide, In-Al-Zn oxide, In-Sn-Zn oxide, In-Hf-Zn oxide oxides, In-La-Zn oxides, In-Ce-Zn oxides, In-Pr-Zn oxides In-Nd-Zn oxide, In-Sm-Zn oxide, In-Eu-Zn oxide , In-Gd-Zn oxide, In-Tb-Zn oxide, In-Dy-Zn oxide, In-Ho-Zn oxide, In-Er-Zn oxide, In-Tm-Zn oxide, I n-Yb-Zn oxide, In-Lu-Zn ​​oxide, In-Sn-Ga-Zn oxide , In-Hf-Ga-Zn oxide, In-Al-Ga-Zn oxide, In-Sn-A l-Zn oxide, In-Sn-Hf-Zn oxide, In-Hf-Al-Zn oxide can be used.

[0164] In this case, the In-Ga-Zn oxide is an oxide having In, Ga, and Zn as main components. The ratio of In, Ga, and Zn does not matter. Metal elements other than n may be present.

[0165] In addition, the semiconductor layer and the conductive layer of the transistor may be formed of the oxide having the same metal element. The semiconductor layer and the conductive layer may contain the same metal element, thereby reducing manufacturing costs. For example, the semiconductor layer and the conductive layer may be formed using metal oxides of the same metal composition. By using a nitride target, the manufacturing cost can be reduced. The etching gas or etching solution can be commonly used for processing the dielectric layer and the conductive layer. However, the semiconductor layer and the conductive layer may have different compositions even if they contain the same metal element. For example, metal elements in the film may come off during the manufacturing process of a transistor or a capacitor. The metal compositions may differ depending on the distance between the metal layers.

[0166] The oxide semiconductor that constitutes the semiconductor layer of the transistor has a band gap of 2 eV or more. It is preferably 2.5 eV or more, and more preferably 3 eV or more. By using an oxide semiconductor with a wide band gap for the semiconductor layer of a transistor, The off-current of the transistor can be reduced.

[0167] When the oxide semiconductor constituting the semiconductor layer of a transistor is an In-M-Zn oxide, In -M-Zn oxide film containing metal elements in the sputtering target The atomic ratio of In is preferably In≧M and Zn≧M. The atomic ratio of the metal elements in the get is In:M:Zn=1:1:1, In:M:Zn=1 :1:1.2, In:M:Zn=3:1:2, 4:2:4.1, etc. are preferred. The atomic ratio of the semiconductor layers to be formed is determined by the above sputtering target. This includes a variation of plus or minus 40% in the atomic ratio of the metal elements contained.

[0168] An oxide semiconductor film with low carrier density is used as a semiconductor layer of a transistor. For example, the semiconductor layer has a carrier density of 1×10 17 / cm 3 Less than or equal to 1×10 1 5 / cm 3 Less than 1×10, more preferably 13 / cm 3 Less than or equal to 1×10 11 / cm 3 Less than 1×10, more preferably 10 / cm 3 Less than 1 x 10 -9 / cm 3 The above-mentioned oxide semiconductors can be used. The oxide semiconductor has a low impurity concentration. Since the density of defect states is low, the oxide semiconductor provides stable electrical characteristics of transistors. It can be said that there is.

[0169] Note that oxide semiconductors that can be used for the semiconductor layer of a transistor are not limited to these. Depending on the required electrical characteristics of the transistor (field effect mobility, threshold voltage, etc.), In order to obtain the required electrical characteristics of the transistor, The carrier density, impurity concentration, defect density, and the elements of metal and oxygen in the semiconductor layer of the transistor It is preferable to make the molecular ratio, interatomic distance, density, etc. appropriate.

[0170] In the oxide semiconductor that constitutes the semiconductor layer of a transistor, If silicon or carbon is included, oxygen vacancies will increase in the semiconductor layer, causing it to become n-type. Therefore, the concentration of silicon and carbon in the semiconductor layer (measured by secondary ion mass spectrometry) The concentration that can be obtained is 2 x 10 18 atoms / cm 3 Less than or equal to 2 x 10 17 a toms / cm 3 The following applies.

[0171] In addition, when alkali metals and alkaline earth metals combine with oxide semiconductors, they generate carriers. In some cases, the off-state current of a transistor including the oxide semiconductor in a semiconductor layer increases. For this reason, secondary ion mass spectrometry of the semiconductor layer of a transistor The concentration of alkali metal or alkaline earth metal obtained by the method is 1×10 18 atoms / cm 3 Less than or equal to 2 x 10 16 atoms / cm 3 To the following:

[0172] In addition, when nitrogen is contained in the oxide semiconductor that constitutes the semiconductor layer of the transistor, This causes the generation of electrons that are rearranged, increases the carrier density, and makes it easier to become n-type. A transistor using an oxide semiconductor for a semiconductor layer is likely to be normally on. Therefore, the nitrogen concentration in the semiconductor layer obtained by secondary ion mass spectrometry is , 5×10 18 atoms / cm3 It is preferable to do the following:

[0173] The semiconductor layer of the transistor may have a non-single crystal structure, for example. For example, CAAC-OS(C-Axis Aligned Crystalline O xide Semiconductor or C-Axis Aligned and AB-plane Anchored Crystalline Oxide Se The term "non-monocrystalline" includes non-monocrystalline, polycrystalline, microcrystalline, or amorphous structures. In terms of structure, the amorphous structure has the highest density of defect states, and the CAAC-OS has the lowest density of defect states. Low degree.

[0174] An oxide semiconductor film having an amorphous structure has, for example, a disordered atomic arrangement and does not contain a crystalline component. Alternatively, the oxide semiconductor film having an amorphous structure may have a completely amorphous structure and may have a crystalline portion. No.

[0175] The semiconductor layer of the transistor may have an amorphous structure, a microcrystalline structure, or a polycrystalline structure. A mixed film having two or more of the following regions: a region of a crystalline structure, a region of a CAAC-OS, and a region of a single crystal structure. The mixed film may be, for example, a single film including two or more of the above-mentioned regions. It may have a layered or laminated structure.

[0176] Alternatively, silicon may be used for the semiconductor layer in which the channel region of the transistor is formed. Although amorphous silicon may be used as silicon, crystalline silicon is particularly preferred. It is preferable to use silicon that can be used in the present invention. For example, microcrystalline silicon, polycrystalline silicon, single crystal It is preferable to use silicon. In particular, polycrystalline silicon has a higher thermal conductivity than single-crystalline silicon. It can be formed at low temperatures and has higher field effect mobility and higher reliability than amorphous silicon. By applying such a polycrystalline semiconductor to a pixel, for example, the aperture ratio of the pixel can be increased. In addition, even when pixels are extremely densely arranged, the gate drive circuit This makes it possible to form the lines and source driver circuits on the same substrate as the pixels, and This allows the number of parts required to be reduced.

[0177] The bottom-gate transistor described in this embodiment can reduce the manufacturing process. In addition, by using amorphous silicon for the semiconductor layer of the transistor, Since it can be formed at a lower temperature than crystalline silicon, it can be used as a material for wiring and electrodes below the semiconductor layer. In addition, it is possible to use materials with low heat resistance as the substrate material, expanding the range of material choices. For example, a very large glass substrate can be suitably used. On the other hand, in a top-gate transistor, the impurity region is easily formed in a self-aligned manner. This is preferable because it can reduce the variation in electrical characteristics. This is suitable when polycrystalline silicon or single crystal silicon is used for the semiconductor layer of the transistor.

[0178] [Conductive Layer] In addition to the gate, source, and drain of the transistor, various wirings and Materials that can be used for the conductive layers such as electrodes include aluminum, titanium, chromium, and the like. , nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, or tungsten Examples of the material include metals such as stainless steel, and alloys that contain stainless steel as the main component. The film containing silicon can be used as a single layer or as a laminate structure. A single layer of aluminum film, a two-layer structure with an aluminum film laminated on a titanium film, and a tungsten A two-layer structure in which an aluminum film is laminated on a copper film, and a copper-magnesium-aluminum alloy film A two-layer structure in which a copper film is laminated on a titanium film, a two-layer structure in which a copper film is laminated on a titanium film, and a two-layer structure in which a copper film is laminated on a tungsten film A two-layer structure consisting of a copper film, a titanium film or a titanium nitride film, and an aluminum film on top of that. Alternatively, a three-layer structure is formed by laminating a copper film and then forming a titanium film or titanium nitride film on top of the copper film. A molybdenum film or a molybdenum nitride film is laminated on the surface of the film, and an aluminum film or a copper film is laminated thereon. There is also a three-layer structure in which a molybdenum film or a molybdenum nitride film is formed on top of the above. Oxides such as indium oxide, tin oxide, or zinc oxide may also be used. The use of such a film is preferable because it enhances the controllability of the shape by etching.

[0179] Examples of the conductive material having a light-transmitting property include indium oxide, indium tin oxide, and indium tin oxide. Conductive oxides such as indium zinc oxide, zinc oxide, zinc oxide doped with gallium, or gallium-containing oxides Alternatively, gold, silver, platinum, magnesium, nickel, tungsten, etc. can be used. Metallic materials such as stainless steel, chromium, molybdenum, iron, cobalt, copper, palladium, or titanium Alternatively, a nitride of the metal material (e.g., For example, titanium nitride) may be used. In the case of using a material such as a reflective film, it is sufficient to make the material thin enough to have light transmission properties. For example, an alloy of silver and magnesium and indium tin can be used as the conductive layer. It is preferable to use a laminated film of oxides, etc., since the electrical conductivity can be increased. Conductive layers such as various wirings and electrodes constituting the display device 10 and conductive layers (image layers) of the display element It can also be used for a conductive layer that functions as a base electrode or a common electrode.

[0180] [Insulating layer] Examples of insulating materials that can be used for each insulating layer include acrylic and epoxy. In addition to resins with siloxane bonds such as silicone, silicon oxide, silicon oxynitride, etc. Inorganic insulating materials such as silicon, silicon oxide nitride, silicon nitride, and aluminum oxide are used. You can also be there.

[0181] In addition, the light emitting element is preferably provided between a pair of insulating layers with low water permeability. This makes it possible to prevent impurities such as water from entering the light emitting element, thereby improving the reliability of the display device 10. The decrease in the amount of

[0182] As an insulating layer with low water permeability, a film made of nitrogen and silicon, such as silicon nitride film or silicon oxide nitride film, is used. Examples of the film include a film containing nitrogen and a film containing aluminum, such as an aluminum nitride film. Alternatively, a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, or the like may be used.

[0183] For example, the water vapor transmission rate of an insulating layer with low water permeability is 1×10 -5 [g / (m 2 ·day) ] or less, preferably 1 × 10 -6 [g / (m 2 ·day)] or less, preferably 1×1 0 -7 [g / (m 2 ·day)] or less, and more preferably 1×10 -8 [g / (m 2 d ay)] below.

[0184] [Light-emitting element] The light-emitting element may be a self-emitting element that is illuminated by a current or a voltage. The category includes devices whose light intensity can be controlled. For example, light-emitting diodes (LEDs), organic An EL element, an inorganic EL element, etc. can be used.

[0185] The light-emitting elements are top emission type, bottom emission type, and dual emission type. The electrode on the light extraction side is made of a conductive film that transmits visible light. In addition, it is preferable to use a conductive film that reflects visible light for the electrode on the side from which light is not extracted. stomach.

[0186] The EL layer has at least a light-emitting layer. The EL layer has a hole-injecting layer as a layer other than the light-emitting layer. a material with high hole transporting properties, a material with high hole transporting properties, a hole blocking material, a material with high electron transporting properties, Substances with high injection properties, or bipolar substances (substances with high electron transport and hole transport properties), etc. The film may further include a layer comprising:

[0187] The EL layer can be made of either low molecular weight compounds or high molecular weight compounds. Each of the layers constituting the EL layer may be formed by deposition (including vacuum deposition). .) The film can be formed by a method such as a transfer method, a printing method, an ink-jet method, or a coating method.

[0188] When a voltage higher than the threshold voltage of the light-emitting element is applied between the cathode and anode, the EL layer is charged from the anode side. Holes are injected from the cathode side, and electrons are injected from the cathode side. The injected electrons and holes are The electrons recombine with each other, and the light-emitting material contained in the EL layer emits light.

[0189] When a white-emitting light-emitting element is used as the light-emitting element, two or more types of light-emitting elements are used in the EL layer. For example, the light emitted by each of the two or more luminescent materials is preferably of a complementary color. By selecting a luminescent material so that the above relationship holds, white light can be obtained. For example, R (red), G (green), B (blue), Y (yellow), O (orange), etc. Among luminous substances that emit light containing two or more of the spectral components of R, G, and B In addition, it is preferable that the spectrum of the light emitted from the light emitting element is in the visible light region. Emission with two or more peaks within a wavelength range (e.g., 350 nm to 750 nm) It is preferable to use a light emitting element. The spectrum is preferably a material having spectral components in the green and red wavelength regions. It is nice.

[0190] The EL layer is made up of a light-emitting layer containing a light-emitting material that emits one color and a light-emitting layer containing a light-emitting material that emits another color. For example, a plurality of light-emitting layers in the EL layer are preferably laminated. The layers may be stacked in contact with each other or separated by an area that does not contain any luminescent material. For example, a fluorescent-emitting layer or a phosphorescent-emitting layer may be laminated between the fluorescent-emitting layer and the phosphorescent-emitting layer. The phosphorescent layer contains the same materials (for example, a host material and an assist material) as those of the phosphorescent layer, and A region that does not contain any optical material may be provided. This makes it easier to manufacture the light-emitting element. In addition, the driving voltage is reduced.

[0191] The light-emitting element may be a single element having one EL layer, or a light-emitting element having multiple EL layers. and a charge generating layer interposed therebetween to form a tandem element.

[0192] The conductive film that transmits visible light is, for example, indium oxide, indium tin oxide, indium It can be formed using zinc oxide, zinc oxide, zinc oxide doped with gallium, etc. In addition, gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum Metallic materials such as iron, cobalt, copper, palladium, and titanium, and alloys containing these metallic materials , or nitrides of these metal materials (for example, titanium nitride) may be used to the extent that they have translucency. It can be used by forming it thin. Also, a laminated film of the above materials can be used as a conductive layer. For example, a laminated film of an alloy of silver and magnesium and indium tin oxide can be used. In this case, the electrical conductivity can be increased, which is preferable. Graphene or the like may also be used. .

[0193] Examples of conductive films that reflect visible light include aluminum, gold, platinum, silver, nickel, Metallic materials such as tungsten, chromium, molybdenum, iron, cobalt, copper, or palladium; Alternatively, an alloy containing these metal materials can be used. In addition, titanium, nickel, lanthanum, neodymium, germanium, etc. may be added. Nickel, or an alloy containing neodymium and aluminum (aluminum alloy) may be used. In addition, an alloy containing copper, palladium, magnesium, and silver may be used. The alloy is preferable because of its high heat resistance. By laminating a metal film or a metal oxide film in contact with the metal oxide film, oxidation can be suppressed. Examples of materials for such metal films and metal oxide films include titanium and titanium oxide. Alternatively, the conductive film that transmits visible light and a film made of a metal material may be laminated. For example, Indium tin oxide laminated film, silver-magnesium alloy and indium tin oxide laminated film, etc. etc. can be used.

[0194] The electrodes may be formed by vapor deposition or sputtering. Formed using a discharge method such as the jet method, a printing method such as the screen printing method, or a plating method. It is possible.

[0195] In addition, the above-mentioned light-emitting layer, the substance having a high hole-injecting property, the substance having a high hole-transporting property, the substance having a high electron-transporting property, The layers containing a material with high electron transport properties, a material with high electron injection properties, a bipolar material, etc. These include inorganic compounds such as quantum dots and polymer compounds (oligomers, dendrimers, polymers, etc.). For example, quantum dots may be used in the light-emitting layer to provide a light-emitting material. It can also function as

[0196] The quantum dot materials include colloidal quantum dot materials, alloy quantum dot materials, Core-shell type quantum dot materials, core type quantum dot materials, etc. can be used. Materials containing elements from groups 12 and 16, 13 and 15, or 14 and 16 are used. Or, cadmium, selenium, zinc, sulfur, phosphorus, indium, tellurium, lead, Quantum dot materials containing elements such as gallium, arsenic, and aluminum may also be used.

[0197] [Liquid crystal element] As the liquid crystal element, for example, a vertical alignment (VA) A liquid crystal element in which the vertical alignment mode is applied can be used. (Multi-Domain Vertical Alignment) mode, PVA (Patterned Vertical Alignment) mode, ASV (Ad It is possible to use modes such as the Super View mode.

[0198] In addition, the liquid crystal element may be a liquid crystal element to which various modes are applied. For example, in addition to the VA mode, there are also TN (Twisted Nematic) and IPS (In -Plane-Switching mode, FFS (Fringe Field Switching) mode itching) mode, ASM(Axially Symmetric aligne) d Micro-cell mode, OCB (Optically Compensated ed Birefringence mode, FLC (Ferroelectric L iquid Crystal mode, AFLC (AntiFerroelectric) Liquid crystal elements using the Liquid Crystal (LC) mode can be used. .

[0199] The liquid crystal element is an element that controls the transmission or non-transmission of light by the optical modulation action of liquid crystal. The optical modulation of liquid crystals is caused by the electric field applied to the liquid crystal (horizontal electric field, vertical electric field, The liquid crystal used in the liquid crystal element is These include thermotropic liquid crystal, low molecular weight liquid crystal, high molecular weight liquid crystal, and polymer dispersed liquid crystal (PDLC: Polymer Dispersed Liquid Crystal, Ferroelectric Liquid Crystal These liquid crystal materials can be used as cholesteric or antiferroelectric liquid crystals depending on the conditions. These phases include nematic, smectic, cubic, chiral nematic, and isotropic phases.

[0200] As the liquid crystal material, either a positive type liquid crystal or a negative type liquid crystal may be used. The optimum liquid crystal material may be used depending on the mode and design to be applied.

[0201] In addition, an alignment film can be provided to control the alignment of the liquid crystal. When adopting this method, liquid crystals exhibiting a blue phase without using an alignment film may be used. When the temperature of a cholesteric liquid crystal is increased, the cholesteric phase changes to the isotropic phase. The blue phase appears only in a narrow temperature range, so it is difficult to distinguish between the two. In order to improve the range, a liquid crystal composition containing a chiral agent of several weight percent or more is used in the liquid crystal layer. A liquid crystal composition containing a liquid crystal exhibiting a blue phase and a chiral agent has a short response time and optically isotropic In addition, the liquid crystal composition containing the liquid crystal exhibiting the blue phase and the chiral agent has the following properties. No alignment film is required, and viewing angle dependency is small. This eliminates the need for rubbing, which can prevent electrostatic damage caused by rubbing. This can reduce defects and damage to the liquid crystal display device during the manufacturing process.

[0202] The liquid crystal element may be a transmissive liquid crystal element, a reflective liquid crystal element, or a semi-transmissive liquid crystal element. Children, etc. can be used.

[0203] When using a transmissive or semi-transmissive liquid crystal element, two polarizing plates are placed between a pair of substrates. In addition, a backlight is provided on the outer side of the polarizing plate. It may be a direct-light type backlight or an edge-light type backlight. Direct backlight equipped with LED (Light Emitting Diode) This makes local dimming easier and increases contrast. In addition, when an edge-light type backlight is used, the touch panel including the backlight can be easily illuminated. This is preferable because it allows the thickness of the chip panel module to be reduced.

[0204] When a reflective liquid crystal element is used, a polarizing plate is provided on the display surface side. It is preferable to place a light diffusion plate on the display surface side, since this improves visibility.

[0205] [Adhesive layer] The adhesive layer may be a light-curing adhesive such as an ultraviolet-curing adhesive, a reaction-curing adhesive, or a heat-curing adhesive. Various curing adhesives such as viscoelastic adhesives, anaerobic adhesives, etc. can be used. , epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, Mido resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, EVA (ethylene vinyl acetate) resin, etc. In particular, the moisture permeability of epoxy resin, etc. A material with low adhesion is preferable. A two-part mixed resin may also be used. may also be used.

[0206] The resin may contain a desiccant. For example, an oxide of an alkaline earth metal (an acid The material used is one that adsorbs moisture by chemical adsorption, such as calcium chloride or barium oxide. Alternatively, materials such as zeolite and silica gel can absorb moisture by physical adsorption. If a desiccant is included, impurities such as moisture may penetrate into the element. This is preferable because it can suppress the occurrence of the problem of the noise and improve the reliability of the display panel.

[0207] In addition, by mixing a filler with a high refractive index or a light scattering material into the resin, it is possible to improve the light extraction efficiency. For example, titanium oxide, barium oxide, zeolite, and di Ruthenium, etc. can be used.

[0208] [Connection Layer] The connection layer is made of anisotropic conductive film (ACF). conductive film) and anisotropic conductive paste (ACP) Conductive Paste) can be used.

[0209] [Colored layer] Materials that can be used for the coloring layer include metal materials, resin materials, pigments, and dyes. Examples of such materials include resin materials.

[0210] [Light blocking layer] Materials that can be used for the light-shielding layer include carbon black, metals, and metal oxides. , a composite oxide including a solid solution of a plurality of metal oxides, etc. For example, a laminated film containing a material having a certain color may be used. A laminated structure of a film containing the material to be used and a film containing the material to be used for a colored layer that transmits light of another color By using the same material for the colored layer and the light-shielding layer, the device can be standardized. In addition, this is preferable because it can simplify the process.

[0211] The above is a description of each component.

[0212] [Configuration example 2] In the following, as an example of the display device 10 according to one embodiment of the present invention, an input / output device (touch panel), A configuration example of an input device (touch sensor) will be described.

[0213] In this specification, a display panel, which is one aspect of the display device 10, is a display panel that displays a picture on a display surface. The display panel has the function of displaying (outputting) images, etc. This is one embodiment.

[0214] In the present specification, the substrate of the display panel is provided with, for example, an FPC (Flexible Printed Circuit). rinted Circuit) or TCP (Tape Carrier Pack Those with connectors such as COG (Chip On Gauge) or COG (Chip On Board) A display panel module is a device that has an IC (integrated circuit) mounted using a method such as a glass mounting method. , a display module, or simply a display panel.

[0215] In addition, in this specification, a touch sensor is a sensor that is touched by a detection object such as a finger or a stylus. The touch sensor has the function of detecting the input or the proximity of the touch panel. This is one aspect of the device.

[0216] In addition, in this specification and the like, a substrate having a touch sensor is referred to as a touch sensor panel, or simply In this specification, the substrate of the touch sensor panel is For example, connectors such as FPC or TCP are attached to the board. The IC is mounted using the COG method, etc., and is called a touch sensor panel module or touch sensor The touch sensor may be called a sensor module, a sensor module, or simply a touch sensor.

[0217] In this specification, a touch panel, which is one aspect of the display device 10, is a display device that displays a picture on a display surface. The function of displaying (outputting) images, etc., and detecting when a detectable object such as a finger or stylus touches the display surface, or It also has a function as a touch sensor that detects the proximity of a touch panel. A panel is one aspect of an input / output device.

[0218] The touch panel is, for example, a display panel (or display device) with a touch sensor, It can also be called a display panel (or display device) with a display function.

[0219] The touch panel may also have a display panel and a touch sensor panel. Alternatively, the display panel may have a touch sensor function inside. .

[0220] In addition, in this specification, a connector such as TCP is attached to the substrate of the touch panel. The touch panel is a device that has an IC mounted on it, or a device that has an IC mounted on the board using the COG method, etc. It may be called a touch panel, a display module, or simply a touch panel.

[0221] [Touch sensor configuration example] An example of the configuration of the input device (touch sensor) will be described below with reference to the drawings.

[0222] 16A shows a schematic top view of the input device 150. The input device 150 includes a substrate 160. A plurality of electrodes 151, a plurality of electrodes 152, a plurality of wirings 155, and a plurality of wirings 156 are provided on the substrate. In addition, the substrate 160 has a plurality of electrodes 151 and a plurality of electrodes 152 electrically connected thereto. A flexible printed circuit (FPC) 157 is installed to connect the FIG. 16A shows an example in which an IC 158 is provided on an FPC 157. is.

[0223] FIG. 16B shows an enlarged view of the area surrounded by the dashed line in FIG. 16A. The electrode pattern has a shape in which multiple diamond-shaped electrode patterns are aligned in the horizontal direction of the paper. The diamond-shaped electrode patterns are electrically connected to each other. Similarly, the electrode 152 is A plurality of diamond-shaped electrode patterns are arranged in the vertical direction of the paper, and the diamond-shaped electrodes are arranged in a row. The electrode patterns are electrically connected to each other. At this intersection, the electrodes 151 and 152 are An insulator is sandwiched between the terminal 52 to prevent an electrical short circuit.

[0224] As shown in FIG. 16C, a plurality of diamond-shaped electrodes 152 are formed as bridges. The electrodes 152 may be connected by the electrodes 153. The island-shaped electrodes 152 are arranged vertically. The two adjacent electrodes 152 are electrically connected by a bridge electrode 153. With this configuration, the electrodes 151 and 152 can be formed by processing the same conductive film. Therefore, the variation in the film thickness of these layers can be suppressed. This makes it possible to suppress variations in the resistance value and light transmittance of each electrode depending on the location. In this embodiment, the electrode 152 has a bridge electrode 153. may have such a configuration.

[0225] As shown in FIG. 16D, the electrodes 151 and 152 shown in FIG. 16B The inside of the diamond-shaped electrode pattern may be hollowed out, leaving only the outline. At this time, if the width of the electrodes 151 and 152 is thin enough not to be visually recognized by the user, As described later, the electrodes 151 and 152 are made of a light-shielding material such as a metal or an alloy. In addition, the electrode 151 or the electrode 152 shown in FIG. 16(D) may be the bridge electrode 1. 53 may be provided.

[0226] Each electrode 151 is electrically connected to one wiring 155. 52 is electrically connected to one wiring 156. One of them corresponds to a row wiring, and the other corresponds to a column wiring.

[0227] The IC158 has a function of driving the touch sensor. is supplied to either the electrode 151 or the electrode 152 via the wiring 155 or the wiring 156. In addition, the current (or potential) flowing through either the electrode 151 or the electrode 152 is 55 or via wiring 156 to be input to IC 158 .

[0228] Here, when the input device 150 is placed on the display surface of the display panel to form a touch panel, In this case, the electrodes 151 and 152 are preferably made of a light-transmitting conductive material. In addition, the electrodes 151 and 152 are formed using a light-transmitting conductive material, and the electrodes 151 and 152 are formed using a light-transmitting conductive material. When the current is taken out through the electrode 151 or the electrode 152, the following is provided between the electrode 151 and the electrode 152: It is preferable to dispose a conductive film containing the same conductive material as these as a dummy pattern. In this way, a part of the gap between the electrode 151 and the electrode 152 is filled with the dummy pattern. This can reduce the variation in light transmittance within the input device 150 surface. Therefore, unevenness in brightness of the light passing through the input device 150 can be reduced.

[0229] Examples of the conductive material having a light-transmitting property include indium oxide, indium tin oxide, and indium tin oxide. Conductive oxides such as zinc oxide, zinc oxide, and zinc oxide doped with gallium are used. A film containing graphene can also be used. The film containing graphene is, for example, For example, the graphene oxide film can be reduced to form the graphene oxide film. As a method for this, a method of applying heat can be mentioned.

[0230] Alternatively, a metal or alloy that is thin enough to have light transmission properties can be used. For example, gold, silver, etc. , platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, Metals such as copper, palladium, or titanium, or alloys containing these metals, can be used. Alternatively, a nitride of the metal or alloy (for example, titanium nitride) may be used. A laminated film in which two or more conductive films containing the above materials are laminated may be used.

[0231] In addition, the electrodes 151 and 152 are made thin enough that they are not visible to the user. A conductive film may be used. For example, such a conductive film may be processed into a lattice (mesh) shape. As a result, high conductivity and high visibility of the display device can be obtained. nm or more and 100 μm or less, preferably 50 nm or more and 50 μm or less, and more preferably 50 nm or more It is more preferable to have a portion with a width of 20 μm or less. A conductive film having a width of 1 mm is preferable because it is extremely difficult for a user to visually recognize the conductive film.

[0232] As an example, FIG. 17(A) to FIG. 17(D) show enlarged views of a part of the electrode 151 or the electrode 152. FIG. 17(A) shows an example in which a lattice-shaped conductive film 146 is used. At this time, the conductive film 146 is arranged so as not to overlap with a display element of the display device. This is preferable because it does not block the light from the display device. The direction of the grating is the same as that of the display element array, and the period of the grating is an integer multiple of the period of the display element array. It is preferable to set the above.

[0233] FIG. 17B shows a lattice-shaped conductive film processed to form triangular openings. 17A. By adopting such a configuration, the conductive film 147 shown in FIG. Compared to 46, it is possible to achieve a lower resistance.

[0234] Also, as shown in FIG. 17(C), a conductive film 14 having a pattern shape without periodicity 8. By adopting such a configuration, when the display unit of the display device is overlapped, the display unit This can prevent the occurrence of cracks.

[0235] Alternatively, the electrodes 151 and 152 may be made of conductive nanowires. ) shows an example in which a nanowire 149 is used. By distributing the particles at an appropriate density so that they come into contact with each other, a two-dimensional network is formed. For example, the average diameter of the is 1 nm or more and 100 nm or less, preferably 5 nm or more and 50 nm or less, more preferably 5 Nanowires having a length of 25 nm or more can be used. Metal nanowires such as Cu nanowires and Al nanowires, or carbon nanowires Nanotubes and the like can be used. For example, Ag nanowires have a light transmittance of 8 9% or more, and a sheet resistance value of 40 Ω / □ or more and 100 Ω / □ or less can be achieved.

[0236] The above is a description of the configuration example of the touch sensor.

[0237] [Touch panel configuration example] In the following, as an example of the display device 10 according to one embodiment of the present invention, a configuration example of a touch panel will be described. The following description will be given with reference to the drawings.

[0238] FIG. 18A is a schematic perspective view of the touch panel 100. FIG. FIG. 18(A) is a perspective schematic view of the developed device. For clarity, only representative components are shown. 18B, only the outline of the substrate 31 is shown by a broken line.

[0239] The touch panel 100 includes a substrate 31 on which an input device 150 is provided and a substrate 21. The configuration of the substrate 21 side can be based on the above-mentioned configuration example 1. This can be done.

[0240] The configuration of the input device 150 can be based on the configuration example of the touch sensor described above. In FIG. 18(B), an input device 150 includes a plurality of electrodes 151, a plurality of electrodes 152, and a plurality of wirings. 155 and a plurality of wirings 156.

[0241] As the input device 150, for example, a capacitive touch sensor can be used. The capacitance type includes the surface type capacitance type and the projected type capacitance type. The capacitance method includes the self-capacitance method and the mutual capacitance method. This is preferable because it enables multiple points to be detected at the same time. The cases in which this is applied will be explained.

[0242] However, the present invention is not limited to this, and it is also possible to detect the proximity or contact of a detection object such as a finger or a stylus. Various sensors that can be used for inputting a signal may also be applied to the input device 150.

[0243] The touch panel 100 shown in FIG. 18(A) and FIG. 18(B) includes an input device 150 on a substrate 31. The wiring 155 and the wiring 156 of the input device 150 are connected to the connection portion 16. 9, it is electrically connected to the FPC 42 connected to the substrate 21 side.

[0244] With this configuration, the FPC connected to the touch panel 100 is located on one of the substrates ( Here, it can be arranged only on the substrate 21 side. The above FPC may be attached, but as shown in Figures 18(A) and 18(B), The touch panel 100 is provided with one FPC 42, and the FPC 42 is connected to the substrate 21 side and the substrate By configuring the circuit board 31 so that signals are supplied to both sides, the number of parts can be further reduced and the circuit board 31 can be simplified. This is preferable because it allows

[0245] The connection portion 169 is configured to include, for example, a connection body having anisotropic conductivity. The connector may be, for example, a conductive particle. The particles used are organic resin or silica particles whose surfaces are coated with a metal material. Nickel or gold is preferably used as the metal material because it can reduce the contact resistance. It is also preferable to coat two or more metal materials in layers, such as by coating nickel with gold. It is preferable to use particles that are elastically or plastically deformed as the connector. It is preferable to use a material in which the conductive particles are crushed in the vertical direction. In this way, the contact area between the connector and the conductive layer electrically connected thereto is increased. This increases the contact resistance and prevents problems such as poor connection.

[0246] The connection body is covered with an adhesive layer 141 (not shown) that bonds the substrate 21 and the substrate 31. For example, it is preferable to dispose the connectors in the adhesive layer 141 before hardening. By disposing the connection portion 169 at the portion where the adhesive layer 141 is provided, The connection portion 169 is configured such that the adhesive layer 141 is also disposed on the display portion 32 (also called a solid sealing structure). .) as well as for example, light-emitting devices with hollow sealing structures, liquid crystal display devices, etc. The present invention can also be applied to a configuration in which 141 is used in the periphery.

[0247] Also, in Fig. 18(A) and Fig. 18(B), unlike Fig. 1, IC168 is mounted on FPC42. In this case, the IC 168 has a function of driving the input device 150. An IC for driving the input device 150 may be provided on the substrate 21, the substrate 31, or the FP. It may be provided separately in C42 etc.

[0248] [Cross-sectional configuration example] Next, an example of a cross-sectional configuration of the touch panel 100 will be described. 19 is a schematic cross-sectional view of the substrate 100. Compared to FIG. 11, FIG. 19 shows that the substrate 3 is not covered with the adhesive layer 141. The main difference is in the configuration of side 1.

[0249] On the surface of the substrate 31 facing the substrate 21, an insulating layer 161, an insulating layer 162, an insulating layer 163, and an insulating layer The light-shielding layer 133 is disposed between the insulating layer 161 and the insulating layer 162. Between the insulating layer 162 and the insulating layer 163, the electrodes 151, 152, etc. are provided. A bridge electrode 153 is provided between the insulating layer 163 and the insulating layer 164. A colored layer 131a, a light-shielding layer 132, etc. are provided on the surface of the insulating layer 164 on the adhesive layer 141 side. It is being done.

[0250] FIG. 19 clearly shows the intersection of the electrodes 151 and 152. The bridge electrode 153 is The electrode 152 is electrically connected to the two electrodes 151 sandwiching the electrode 152 through an opening provided in the insulating layer 163. is connected to

[0251] The electrodes 151 and 152 are provided at positions overlapping the light-shielding layer 132. 9 shows an example in which the electrode 151 is disposed so as not to overlap the light emitting element 40. In other words, the electrode 151 has a mesh shape having an opening that overlaps with the light emitting element 40. With this configuration, the electrode 151 is disposed on the path of the light emitted by the light emitting element 40. Therefore, there is substantially no decrease in brightness due to the placement of the electrode 151, and visibility is improved. In addition, the electrode 152 is also The configuration may be as follows.

[0252] In addition, since the electrodes 151 and 152 do not overlap the light-emitting element 40, a light-transmitting conductor is not provided between them. There is no need to use a conductive material, and a metal material having a lower resistance than the conductive material can be used. Therefore, compared with the case where the electrodes 151 and 152 are made of a light-transmitting conductive material, This can improve the sensitivity of the touch sensor.

[0253] In addition, in FIG. 19, the substrate 3 is formed of the electrodes 151 and 152 (and the bridge electrodes 153). In this example, a light-shielding layer 133 is provided on the first side of the substrate 1 so as to overlap the light-shielding layer 133. Therefore, even if a metal material is used for the electrode 151, etc., the reflection of external light can be suppressed. Therefore, it is possible to realize a touch panel 100 with higher visibility. In the above example, two light-shielding layers, 131 and 132, are provided. However, it is also possible to provide only one of them. It is also possible to use the following.

[0254] In addition, the polarizing plate 130 on the substrate 31 is not provided, and the substrate 31 is placed on the object to be detected by a finger or a stylus. In this case, a protective layer (ceramic composite) may be provided on the substrate 31. The protective layer is preferably made of, for example, silicon oxide or aluminum oxide. It uses inorganic insulating materials such as yttrium oxide and yttria-stabilized zirconia (YSZ). The substrate 31 may be made of tempered glass. Physical or chemical treatment is performed by exchange method, air cooling method, etc., and compressive stress is applied to the surface. The touch sensor can be attached to one side of the tempered glass, and the other side For example, by providing the surface of the electronic device as a touch surface, the entire device can be The thickness can be reduced.

[0255] As shown in FIG. 19, a light emitting element 40, a plurality of transistors, and a touch sensor are provided. By disposing electrodes between the substrate 21 and the substrate 31, a touch panel with a reduced number of parts can be obtained. It is possible to realize nel 100.

[0256] The configuration of the touch panel 100 is not limited to this. For example, the input device 150 may be provided. The substrate is then laminated on the display device 10 shown in FIG. 1 to form a touch panel 100. Good too.

[0257] In FIG. 20, electrodes 151 and 152 constituting the touch sensor are disposed on the substrate 2 of the substrate 31. This is an example of a structure formed on the opposite side of the first side. It can be called a rule.

[0258] An electrode 151 and an electrode 152 are formed on the substrate 31, and an insulating layer 163 is formed to cover them. In addition, a bridge electrode 153 is provided on the insulating layer 163.

[0259] The substrate 170 is a substrate that functions as a touch surface, and is used, for example, to connect the touch panel 100 to an electrical When the substrate 170 is installed in a child device, the substrate 170 functions as a part of the housing, a protective glass, etc. The substrate 31 is attached by an adhesive layer 165 .

[0260] In FIG. 20, the electrode 151 is not only overlapped with the light-shielding layer 132 but also overlaps with the light-emitting element 4. 0, an example in which the electrode is disposed in an area overlapping with the colored layer 131a, etc. The material 151 can be a material that transmits visible light. For example, a film containing a metal oxide can be used. or a film containing graphene, or a film containing a metal or alloy that is thin enough to transmit visible light. The electrode 151 can be used in the same manner as the electrode 152. The ridge electrode 153 may be made of a similar material that transmits visible light. 3 is disposed so as to overlap the light-shielding layer 132, or the area of ​​the bridge electrode 153 is extremely small. In some cases, a material that blocks visible light, such as a metal or alloy, may be used.

[0261] The above is a description of an example of the cross-sectional configuration of touch panel 100.

[0262] [Configuration example 3] In the following, as an example of the display device 10 according to one embodiment of the present invention, a reflective liquid crystal element and a light-emitting element are used. A display device (display) having both a transmissive mode and a reflective mode and capable of displaying in both modes. An example of a display panel (TR-hybrid display panel) will be described. ay(Transmissive OLED and Reflective LC H It can also be called a ybrid display.

[0263] One example of such a display panel is a liquid crystal element having an electrode that reflects visible light, and a light emitting element. In this case, the electrode that reflects visible light is open. It is preferable that the opening and the light emitting element are arranged to overlap each other. In the through mode, the light emitting element can be driven so that light is emitted from the opening. In addition, a transistor for driving a liquid crystal element and a transistor for forming a light emitting element can be It is preferable that the light emitting element and the liquid crystal element are disposed on the same plane. It is preferable that the layers are laminated with an intervening hole.

[0264] Such display panels are displayed in reflective mode when placed outdoors or in other places with bright external light. This allows the device to operate with extremely low power consumption. In places with poor lighting, you can view the image in transmissive mode for optimal brightness. In addition, by displaying in both transmission and reflection modes, it is extremely easy to see in the ambient light. Compared to conventional display panels, it consumes less power and has better contrast, even in bright places. It is possible to provide a high level of display.

[0265] [Configuration example] FIG. 21A is a block diagram showing an example of the configuration of the display device 200. The display device 0 has a plurality of pixels 210 arranged in a matrix on a display unit 32. 200 includes a circuit GD and a circuit SD. Also, a plurality of pixels 210 arranged in a direction R, and a plurality of wirings G1, G2, and ANO electrically connected to the circuit GD; and a plurality of wirings CSCOM. Also, a plurality of pixels 210 arranged in a direction C and a circuit The semiconductor device has a plurality of wirings S1 and a plurality of wirings S2 electrically connected to the line SD.

[0266] The pixel 210 has a reflective liquid crystal element and a light emitting element. The substrate and the light emitting element have an overlapping portion.

[0267] FIG. 21B1 shows a configuration example of the conductive layer 191 included in the pixel 210. The conductive layer 191 is The conductive layer 191 functions as a reflective electrode of the liquid crystal element in the pixel 210. A mouth 251 is provided.

[0268] In FIG. 21(B1), the light emitting element 40 located in the area overlapping with the conductive layer 191 is indicated by a dashed line. The light emitting element 40 is disposed so as to overlap with an opening 251 of the conductive layer 191. As a result, the light emitted by the light emitting element 40 is emitted through the opening 251 to the display surface side.

[0269] In FIG. 21B1, pixels 210 adjacent in the direction R correspond to different colors. At this time, as shown in FIG. 21(B1), the openings are formed in two pixels adjacent to each other in the direction R. The portions 251 are provided at different positions on the conductive layer 191 so as not to be arranged in a line. This allows the two light emitting elements 40 to be spaced apart, and the light emitted by the light emitting elements 40 can be This phenomenon occurs when light entering the colored layer of an adjacent pixel 210 (also known as crosstalk). In addition, by arranging the adjacent two light emitting elements 40 apart from each other, Therefore, the EL layer of the light emitting element 40 can be separately produced by using a shadow mask or the like. Even so, it is possible to realize a high-definition display device 200.

[0270] The pixels 210 may also be arranged as shown in FIG.

[0271] In the conductive layer 191 of the pixel 210, the ratio of the area of ​​the openings 251 to the total area of ​​the non-openings is If the ratio of the total area is too large, the display using the liquid crystal element becomes dark. If the ratio of the total area of ​​the openings 251 to the total area of ​​the mouth is too small, The display becomes dark.

[0272] In addition, the area of ​​the opening 251 provided in the conductive layer 191 functioning as a reflective electrode is too small. As a result, the efficiency of light that can be extracted from the light emitted by the light emitting element 40 decreases.

[0273] The shape of the opening 251 may be, for example, a polygon, a rectangle, an ellipse, a circle, a cross, or the like. Also, the shape may be elongated stripes, slits, or a checkered pattern. Alternatively, the opening 251 may be arranged close to an adjacent pixel. , and are placed close to other pixels that display the same color. This helps to reduce crosstalk. .

[0274] [Circuit configuration example] 22 is a circuit diagram showing a configuration example of a pixel 210. In FIG. 22, two adjacent pixels It shows 210.

[0275] The pixel 210 includes a switch SW1, a capacitance element C1, a liquid crystal element 60, a switch SW2, a transistor The pixel 210 includes a transistor M, a capacitance element C2, and a light emitting element 40. G1, wiring G2, wiring ANO, wiring CSCOM, wiring S1, and wiring S2 are electrically connected. In addition, in FIG. 22, a wiring VCOM1 electrically connected to the liquid crystal element 60 and A wiring VCOM2 electrically connected to the light emitting element 40 is shown.

[0276] FIG. 22 shows an example in which transistors are used for the switches SW1 and SW2. It shows.

[0277] The switch SW1 has a gate connected to the line G1 and a source or drain connected to the line S 1, and the other of the source and drain is connected to one electrode of the capacitance element C1 and the liquid crystal element 6 The other electrode of the capacitance element C1 is connected to the wiring CSCOM. The other electrode of the liquid crystal element 60 is connected to the wiring VCOM1.

[0278] The switch SW2 has a gate connected to the wiring G2 and a source or drain The other of the source and drain is connected to the wiring S2, and the other of the source and drain is connected to one electrode of the capacitance element C2, The other electrode of the capacitance element C2 is connected to the gate of the transistor M. The source or drain of the transistor M is connected to the wiring ANO. The other of the drains is connected to one of the electrodes of the light emitting element 40. One electrode is connected to the wiring VCOM2.

[0279] In FIG. 22, a transistor M has two gates that sandwich a semiconductor that forms a channel region. This shows an example in which the transistor M is connected to the The current that can be generated can be increased.

[0280] A signal for controlling the switch SW1 to a conductive state or a non-conductive state is applied to the wiring G1. A predetermined potential can be applied to the wiring VCOM1. A signal for controlling the alignment state of the liquid crystal of the element 60 can be applied. A predetermined potential can be applied to the

[0281] A signal for controlling the switch SW2 to a conductive state or a non-conductive state is applied to the wiring G2. A potential difference that causes the light emitting element 40 to emit light is generated between the wiring VCOM2 and the wiring ANO. A potential can be applied to each of the wirings S2. A signal can be given to

[0282] In the pixel 210 shown in FIG. 22, for example, when performing a reflective mode display, the wirings G1 and The display is driven by a signal applied to the wiring S1, and displays the image by utilizing optical modulation by the liquid crystal element 60. In addition, when displaying in a transmissive mode, the signal applied to the wiring G2 and the wiring S2 is The light emitting element 40 can be driven by a signal to emit light for display. In the case of displaying in the above-mentioned manner, the following is given to the wiring G1, the wiring G2, the wiring S1, and the wiring S2: By driving the liquid crystal element 60 and the light emitting element 40 together, display can be performed.

[0283] [Example of a cross-sectional configuration of a display device] FIG. 23 shows a schematic cross-sectional view of a display device 200.

[0284] The display device 200 has an insulating layer 220 between the substrate 21 and the substrate 31. Between the insulating layer 220 and the light emitting element 40, the transistor 205, the transistor 206, The liquid crystal element 60, the color layer 134, etc. are disposed between the insulating layer 220 and the substrate 31. 31, structure 244, etc.

[0285] The substrate 21 and the insulating layer 82 are bonded together with an adhesive layer 141. The insulating layer 220 is attached with an adhesive layer 142 that seals the liquid crystal.

[0286] The liquid crystal element 60 is a reflective liquid crystal element. The liquid crystal element 60 includes a conductive layer 192, a liquid crystal 19 3, and a conductive layer 194. In addition, in contact with the conductive layer 192 on the substrate 21 side, A conductive layer 191 is provided. The conductive layer 191 functions as a reflective electrode of the liquid crystal element 60. The conductive layer 191 has an opening 251. The conductive layer 192 transmits visible light. This includes materials that pass through.

[0287] The light emitting element 40 is a bottom emission type light emitting element. The conductive layer 111, the EL layer 112, and the conductive layer 113 are laminated in this order from the side of the substrate 20. The conductive layer 113 contains a material that reflects visible light, and the conductive layer 111 contains a material that transmits visible light. The light emitted by the light emitting element 40 is guided through the colored layer 134, the insulating layer 220, the opening 251, the conductive layer 220, and the insulating layer 220. The light is emitted toward the substrate 31 side through the layer 192 and the like.

[0288] In addition, the insulating layer 81 and the insulating layer 82 are provided with an opening 11 and an opening 12, respectively. In top view, the outer periphery of the opening 12 is located inside the outer periphery of the opening 11. The portion 11 and the opening 12 are integrated to form a wedge-shaped opening in cross section. The inside of the opening is filled with adhesive layer 141 .

[0289] One of the source and drain of the transistor 205 is electrically connected to the conductive layer 111 of the light-emitting element 40. For example, transistor 205 is electrically connected to transistor M in FIG. Corresponds to.

[0290] One of the source and drain of the transistor 206 is connected to the conductive layer 19 through a terminal portion 207. 1 and the conductive layer 192. The terminal portion 207 is Through the openings provided in the insulating layer 220, the conductive layers provided on both sides of the insulating layer 220 are connected to each other. For example, the transistor 206 has a function of electrically connecting Compatible with switch SW1.

[0291] A terminal portion 204 is provided in an area of ​​the substrate 21 that does not overlap with the substrate 31. 04, like the terminal portion 207, electrically connects the conductive layers provided on both sides of the insulating layer 220. The upper surface of the terminal portion 204 is a conductive film obtained by processing the same conductive film as the conductive layer 192. As a result, the terminal portion 204 and the FPC 42 are connected via the connection layer 242. It can be electrically connected.

[0292] A colored layer 131 and a light-shielding layer 132 are provided on the substrate 21 side of the substrate 31. An insulating layer 195 is provided to cover the color layer 131 and the light-shielding layer 132. The insulating layer 195 is The insulating layer 195 has a function as an overcoat. is provided.

[0293] In addition, a connection portion 252 is provided in a portion of the area where the adhesive layer 142 is provided. In the connecting portion 252, a conductive layer obtained by processing the same conductive film as the conductive layer 192 and a conductive layer 194 are electrically connected to each other by the connecting member 243. A signal input from the FPC 42 connected to the substrate 21 side is input to the conductive layer 194 formed on the substrate 21 side. Or the potential can be supplied via connection 252 .

[0294] A structure 244 is provided between the conductive layer 192 and the conductive layer 194. The structure 244 is , and has the function of maintaining the cell gap of the liquid crystal element 60.

[0295] Although not shown here, the conductive layer 194 and the liquid crystal 193 and the conductive layer 192 and the liquid crystal 193 may be connected to each other. An alignment film for controlling the alignment of the liquid crystal 193 may be provided between the liquid crystals 193. In this case, a part of the alignment film may be provided so as to cover the surface of the structure 244 .

[0296] An example of a method for manufacturing the display device 200 will be described. A conductive layer 192, a conductive layer 191, and an insulating layer 220 are formed in this order on a substrate. After forming the star 205, the light emitting element 40, etc., the substrate 21 and the supporting substrate are bonded together using the adhesive layer 141. Then, the release layer and the insulating layer 220, and the release layer and the conductive layer 230 are bonded to each other. The support substrate and the release layer are removed by peeling the conductive layer 192 at their respective interfaces. In addition, the colored layer 131, the light-shielding layer 132, the structure 244, etc. were formed in advance. The substrate 31 is prepared. Then, the liquid crystal 193 is applied to the side of the substrate 21 or the substrate 31 on which each element is formed. The substrate 21 and the substrate 31 are bonded together with the adhesive layer 142 on the sides on which the elements are formed. By combining these, the display device 200 can be produced.

[0297] The peeling layer is made of a material that peels off at the interface between the insulating layer 220 and the conductive layer 192. In particular, a layer containing a high melting point metal material such as tungsten can be selected as the release layer. A layer containing an oxide of the metal material is laminated, and a nitride layer is used as the insulating layer 220 on the peeling layer. It is preferable to use a multi-layer structure including silicon, silicon oxynitride, silicon nitride oxide, etc. If a high melting point metal material is used for the peeling layer, the temperature for forming the layer formed later must be increased. It is possible to reduce the concentration of impurities in the layer, thereby realizing a highly reliable display device 200. It can be realized.

[0298] The conductive layer 192 may be made of a metal oxide, a metal nitride, a low-resistance oxide semiconductor, or the like. In the case of using an oxide semiconductor, it is preferable to use an oxide of hydrogen, boron, phosphorus, etc. At least one of the concentrations of impurities, nitrogen, and other impurities, and the amount of oxygen vacancies is The conductive layer 192 may be made of a material having a higher thermal conductivity than the semiconductor layer used in the above embodiment.

[0299] This concludes the description of configuration example 3.

[0300] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0301] (Embodiment 2) In this embodiment, an input device applicable to the display device 10 or the display device 200 according to one embodiment of the present invention will be described. An example of a method for driving a force device (touch sensor) will now be described.

[0302] FIG. 24A is a block diagram showing the configuration of a mutual capacitance type touch sensor. In (A), a pulse voltage output circuit 601 and a current detection circuit 602 are shown. In FIG. 4(A), an electrode 621 to which a pulse is applied and an electrode 622 to which a change in current is detected are arranged. These are shown as six wirings, namely, wiring X1 to wiring X6 and wiring Y1 to wiring Y6. However, the number of electrodes is not limited to this. Also, in FIG. 24(A), the electrodes 621 and 622 are A volume formed by overlapping or arranging the electrodes 621 and 622 close to each other. The electrode 621 and the electrode 622 are interchangeable in function. It may be possible.

[0303] For example, the electrode 151 illustrated in the first embodiment corresponds to one of the electrodes 621 and 622. Correspondingly, the electrode 152 corresponds to the other of the electrode 621 and the electrode 622 .

[0304] The pulse voltage output circuit 601 inputs pulse voltages to, for example, the wirings X1 to X6 in order. The current detection circuit 602 is a circuit for detecting, for example, This is a circuit for detecting the current flowing through the

[0305] When a pulse voltage is applied to one of the wirings X1 to X6, a capacitance 603 is formed. An electric field is generated between the electrodes 621 and 622, which form a pair, and a current flows through the electrode 622. A part of the electric field generated between the electrodes is shielded by the proximity or contact of a detected object such as a finger or pen. As a result, the magnitude of the electric field that is generated between the electrodes changes. The thickness changes.

[0306] For example, when there is no proximity or contact of the object to be detected, the current flowing through the wiring Y1 to the wiring Y6 is The magnitude of the capacitance is a value according to the size of the capacitance 603. On the other hand, the proximity or contact of the object to be detected When a part of the electric field is blocked by this, the magnitude of the current flowing through the wiring Y1 to the wiring Y6 decreases. The current detection circuit 602 detects the change. The sensor can detect the proximity or contact of a detection object.

[0307] The current detection circuit 602 detects the (temporal) integral value of the current flowing through one wiring. In that case, for example, an integrating circuit or the like may be used for detection. The peak value may be detected. In that case, for example, the current is converted to a voltage and the peak value of the voltage is detected. It may be detected as a peak value.

[0308] FIG. 24B shows input and output waves in the mutual capacitance type touch sensor shown in FIG. In FIG. 24(B), the detection of each matrix in one sensing period is shown. In FIG. 24(B), the case where the contact or proximity of the detection object is not detected is shown. There are two cases: when the sensor detects contact or proximity of a sensing object (when touched) and when the sensor detects contact or proximity of a sensing object (when touched). Here, for the wirings Y1 to Y6, the magnitude of the detected current is 4 shows the waveform of the voltage corresponding to the

[0309] As shown in FIG. 24B, a pulse voltage is sequentially applied to the wirings X1 to X6. In response to this, current flows through the wires Y1 to Y6. In response to a pulse voltage applied to the wiring X6, a similar current flows through the wirings Y1 to Y6. Therefore, the wirings Y1 to Y6 all show the same output waveform. The current flows through the wiring Y1 to Y6 located at a position where the object to be detected is in contact with or in close proximity to the wiring. As a result, the output waveform at the relevant point changes as shown in FIG. 24(B). do.

[0310] In FIG. 24B, the object to be detected is located at or near the intersection of the wire X3 and the wire Y3. The following shows an example of contact or proximity.

[0311] In this way, in the mutual capacitance method, the electric field generated between a pair of electrodes is blocked, resulting in a problem of By detecting the change in the current, the position information of the object to be detected can be obtained. When the detection sensitivity is high, the object to be detected moves away from the detection surface (e.g., the surface of a touch panel). Even if the object is moving, its coordinates can be detected.

[0312] In addition, in the case of a touch panel, the display period of the display unit and the sensing period of the touch sensor By using a driving method in which the driving time is shifted from the normal driving time, the detection sensitivity of the touch sensor can be increased. For example, if a display period and a sensing period are separated during one frame period, In this case, it is preferable to provide two or more sensing periods in one frame period. By increasing the frequency of sensing, the detection sensitivity can be further improved.

[0313] The pulse voltage output circuit 601 and the current detection circuit 602 are implemented, for example, on a single IC chip. It is preferable that the IC is formed in a substrate. For example, the IC is mounted on a touch panel. It is preferable that the semiconductor device is mounted on a substrate inside the housing of an electronic device. When using a touch panel with a curved surface, parasitic capacitance increases at the curved area, and the effect of noise increases. Therefore, it is recommended to use ICs that use driving methods that are less susceptible to noise. For example, a driving method that increases the signal-to-noise ratio (S / N ratio) is preferably used. It is preferable to use an IC that has been used in the past.

[0314] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0315] (Embodiment 3) In this embodiment mode, the transistors described in the above embodiment modes can be replaced with An example of a transistor that can be implemented will be described with reference to the drawings.

[0316] The display device 10 or the display device 200 according to one embodiment of the present invention includes a bottom-gate transistor or The semiconductor device can be manufactured using various types of transistors, such as top-gate transistors. Therefore, the semiconductor layer material and transistors used can be adjusted to suit existing production lines. The structure can be easily replaced.

[0317] [Bottom-gate transistor] FIG. 25(A1) shows a channel-protected transistor, which is a type of bottom-gate transistor. 25A1 is a cross-sectional view of a transistor 810. In FIG. The transistor 810 is formed on a substrate 771. The transistor 810 is formed on a substrate 771 with an insulating layer 77 therebetween. 2. Also, a semiconductor layer 726 is formed on the electrode 746 via an insulating layer 726. 42. The electrode 746 can function as a gate electrode. The insulating layer 726 can be a gate insulating layer. It can function as.

[0318] In addition, an insulating layer 741 is provided over a channel formation region of the semiconductor layer 742. An electrode 744a and an electrode 744b are provided on the insulating layer 726 in contact with a part of the insulating layer 742. Electrode 744a can function as either a source or drain electrode. A part of the electrode 744a and the electrode 74 A part of 4b is formed on the insulating layer 741.

[0319] The insulating layer 741 can function as a channel protection layer. 1, the exposure of the semiconductor layer 742 that occurs when the electrodes 744a and 744b are formed can be prevented. Therefore, when the electrodes 744a and 744b are formed, the semiconductor layer 7 This prevents the channel forming region of the semiconductor device 42 from being etched. According to one embodiment, a transistor with favorable electrical characteristics can be provided.

[0320] The transistor 810 has an insulating layer 741 formed on the electrode 744a, the electrode 744b, and the insulating layer 741. A layer 728 is provided, and an insulating layer 729 is provided on the insulating layer 728 .

[0321] For example, the insulating layer 772 is formed using the same material and method as the insulating layer 173 and the insulating layer 220. Note that the insulating layer 772 may be a stack of a plurality of insulating layers. For example, the semiconductor layer 742 is formed using the same material and method as the semiconductor layer 231. The semiconductor layer 742 may be a stack of a plurality of semiconductor layers. For example, the electrode 746 can be formed using a material and a method similar to those of the conductive layer 221. The electrode 746 may be a laminate of multiple conductive layers. The insulating layer 26 can be formed using the same material and method as the insulating layer 211. The layer 726 may be a laminate of multiple insulating layers. The layer 744b can be formed using a material and a method similar to those of the wiring 35 or the conductive layer 222. The electrode 744a and the electrode 744b may be a laminate of multiple conductive layers. For example, the insulating layer 741 may be formed using the same material and method as the insulating layer 726. The insulating layer 741 may be a laminate of a plurality of insulating layers. The insulating layer 728 can be formed using a material and a method similar to those of the insulating layer 212. The insulating layer 728 may be a laminate of a plurality of insulating layers. The insulating layer 7 can be formed using the same material and method as the insulating layer 213. 29 may be a stack of multiple insulating layers.

[0322] The electrodes, semiconductor layers, insulating layers, and the like constituting the transistor disclosed in this embodiment are the same as those of other It can be formed using the materials and methods disclosed in the embodiment.

[0323] When an oxide semiconductor is used for the semiconductor layer 742, at least At least in the portion in contact with the semiconductor layer 742, oxygen is taken from a portion of the semiconductor layer 742, and oxygen vacancies are formed. It is preferable to use a material capable of generating oxygen vacancies in the semiconductor layer 742. The resulting region has an increased carrier concentration, which makes it n-type, and the region is called an n-type region (n + layer). Therefore, the region can function as a source region or a drain region. When an oxide semiconductor is used for the semiconductor layer 742, oxygen is taken from the semiconductor layer 742, causing oxygen vacancies. Examples of materials that can be used include tungsten and titanium. .

[0324] The source region and the drain region are formed in the semiconductor layer 742, whereby the electrode 744a In addition, the contact resistance between the electrode 744b and the semiconductor layer 742 can be reduced. The electrical characteristics of the transistor, such as the field effect mobility and the threshold voltage, can be improved. can.

[0325] When a semiconductor such as silicon is used for the semiconductor layer 742, the semiconductor layer 742 and the electrode 744 a and between the semiconductor layer 742 and the electrode 744b, It is preferable to provide a layer that functions as an n-type semiconductor or a p-type semiconductor. It can function as a source or drain region of a transistor.

[0326] The insulating layer 729 has a function of preventing or reducing the intrusion of impurities from the outside into the transistor. It is preferable to form the insulating layer 729 using a material having such a structure. It is also possible.

[0327] In the case where an oxide semiconductor is used for the semiconductor layer 742, the insulating layer 729 is formed before or after the insulating layer 729 is formed. Alternatively, heat treatment may be performed before or after the formation of the insulating layer 729. The oxygen contained in the insulating layer 729 and other insulating layers is diffused into the semiconductor layer 742, Alternatively, the insulating layer 729 can be formed while heating. This makes it possible to compensate for oxygen vacancies in the semiconductor layer 742.

[0328] Generally, the CVD method is a plasma CVD (PECVD) method that uses plasma. sma Enhanced CVD method, Thermal CVD (TCVD) Furthermore, depending on the source gas used, it can be classified into metal CVD (M CVD:Metal CVD) method, MOCVD:Metal Orga These methods include the nic CVD method.

[0329] Generally, the deposition method includes resistance heating deposition, electron beam deposition, MBE (Molecular Beam Evaporation), and r Beam Epitaxy) method, PLD (Pulsed Laser Deposit) tion) method, IBAD(Ion Beam Assisted Deposition) ) method, ALD (Atomic Layer Deposition) method, etc. .

[0330] The plasma CVD method can produce high-quality films at relatively low temperatures. When using a deposition method that does not use plasma, such as the plasma deposition method, damage occurs to the deposition surface. This makes it possible to obtain a film with fewer defects.

[0331] Generally, the sputtering method is classified into DC sputtering method, magnetron sputtering method, sputtering method, RF sputtering method, ion beam sputtering method, ECR (Electron Cycling) on Cyclotron Resonance) sputtering method, facing targets It can be classified into methods such as sputtering.

[0332] In the facing target sputtering method, the plasma is confined between the targets. This reduces the plasma damage to the substrate. Since the incident angle of the sputtered particles to the substrate can be made shallow, the step coverage is improved. It can be improved.

[0333] The transistor 811 shown in FIG. 25A2 has an insulating layer 729 over which a backgate electrode is formed. The transistor 810 differs from the transistor 810 in that it has an electrode 723 that can function as a It may be made of the same materials and methods as pole 746 .

[0334] In general, the back gate electrode is formed of a conductive layer, and the gate electrode and the back gate electrode form The back gate electrode is disposed so as to sandwich the channel forming region of the semiconductor layer. The back gate electrode can function in the same manner as the gate electrode. It may be a potential, a ground potential (GND potential), or any other potential. The potential of the gate electrode is changed independently of the gate electrode. The threshold voltage of the transistor can be changed.

[0335] Both the electrode 746 and the electrode 723 can function as a gate electrode. The insulating layer 726, the insulating layer 728, and the insulating layer 729 each serve as a gate insulating layer. The electrode 723 can function as a gate insulating layer. This is also fine.

[0336] When one of the electrodes 746 and 723 is referred to as a "gate electrode," the other is referred to as a "back electrode." For example, in the transistor 811, the electrode 723 is called a "gate electrode." When the term "electrode" is used, the electrode 746 is referred to as the "back gate electrode." When the transistor 811 is used as a top gate electrode, In addition, either the electrode 746 or the electrode 723 can be considered as a "first The first gate electrode may be referred to as the "gate electrode" and the other as the "second gate electrode."

[0337] By providing the electrode 746 and the electrode 723 with the semiconductor layer 742 interposed therebetween, By setting the potentials of the electrodes 46 and 723 at the same potential, the area in which carriers flow in the semiconductor layer 742 The area becomes larger in the film thickness direction, so the amount of carrier movement increases. As the on-current of the transistor 811 increases, the field effect mobility increases.

[0338] Therefore, the transistor 811 is a transistor having a large on-current relative to its area. That is, the area occupied by the transistor 811 is According to one embodiment of the present invention, the area occupied by a transistor can be reduced. Therefore, according to one embodiment of the present invention, a highly integrated semiconductor device can be realized. It is possible.

[0339] In addition, the gate electrode and the back gate electrode are formed of a conductive layer, so that they are not exposed to the outside of the transistor. The function of preventing the electric field generated in the region from acting on the semiconductor layer in which the channel region is formed (particularly In addition, the back gate electrode has a function of shielding electric fields against static electricity. By forming the semiconductor layer larger than the gate electrode and covering it with a back gate electrode, the electric field shielding function can be improved. This can be done.

[0340] In addition, the electrode 746 and the electrode 723 each have a function of shielding an electric field from the outside. Therefore, charges of charged particles generated on the insulating layer 772 side or above the electrode 723 are transferred to the semiconductor layer 74. As a result, the channel formation region of the gate electrode 2 is not affected. Applying a negative potential to the gate - GBT (Gate Bias-Temperature) switch In addition, the on-current is controlled by the magnitude of the drain voltage. This can reduce the phenomenon that the gate voltage (start voltage) that starts to flow changes. This effect occurs whether the electrodes 746 and 723 are at the same potential or at different potentials. I agree.

[0341] The BT stress test is a type of accelerated test that detects the transitions that occur during long-term use. It is possible to evaluate the characteristic changes (aging) of transistors in a short time. The amount of change in the threshold voltage of a transistor before and after testing is an important index for investigating reliability. The smaller the variation in threshold voltage, the more reliable the transistor is.

[0342] In addition, the electrode 746 and the electrode 723 are provided, and the electrode 746 and the electrode 723 are set to the same potential. This reduces the amount of variation in the threshold voltage of the transistor. At the same time, the variation in electrical characteristics of the capacitors is reduced.

[0343] In addition, a transistor having a back gate electrode is connected to the gate electrode via a positive potential +GB The change in threshold voltage before and after the T stress test was also observed in transistors without a back gate electrode. Smaller than .

[0344] In addition, by forming the back gate electrode with a conductive film having a light shielding property, This prevents light from entering the semiconductor layer from the electrode side. This can prevent deterioration of electrical characteristics, such as a shift in the threshold voltage of a transistor.

[0345] According to one embodiment of the present invention, a highly reliable transistor can be provided. As a result, a highly reliable semiconductor device can be realized.

[0346] FIG. 25(B1) shows a channel-protection transistor, which is one of bottom-gate transistors. 8 shows a cross-sectional view of transistor 820. Transistor 820 is substantially similar to transistor 810. The difference is that an insulating layer 741 covers the edge of a semiconductor layer 742. In addition, an opening is formed by selectively removing a part of the insulating layer 741 that overlaps the semiconductor layer 742. In the semiconductor layer 742, the semiconductor layer 742 and the electrode 744a are electrically connected to each other. In another opening formed by selectively removing a portion of the insulating layer 741 overlapping with the semiconductor layer 42, The insulating layer 741 is electrically connected to the electrode 744b. The region overlapping the first region can function as a channel protection layer.

[0347] The transistor 821 shown in FIG. 25B2 has a backgate electrode over the insulating layer 729. The transistor 820 differs from the transistor 820 in that it has an electrode 723 that can function as a transistor.

[0348] By providing the insulating layer 741, the semiconductor generated when the electrodes 744a and 744b are formed can be prevented. Therefore, the layer 742 can be prevented from being exposed during the formation of the electrodes 744a and 744b. This can prevent the channel formation region of the semiconductor layer 742 from being etched.

[0349] In addition, the transistors 820 and 821 are the same as the transistors 810 and The distance between electrodes 744a and 746 and the distance between electrodes 744b and 746 are larger than the distance between electrodes 744a and 746 and the distance between electrodes 744b and 746. Therefore, the distance between the electrodes 744a and 746 is increased. The parasitic capacitance between the electrodes 744b and 746 can be reduced. According to one aspect of the present invention, a transistor having good electrical characteristics is provided. This can be realized.

[0350] The transistor 825 shown in FIG. 25C1 is a bottom-gate transistor. The transistor 825 is a channel etched transistor. Electrodes 744a and 744b are formed without using 1. A portion of the semiconductor layer 742 that is exposed during the formation of the electrode 744b may be etched. On the other hand, since the insulating layer 741 is not provided, productivity of the transistor can be increased.

[0351] A transistor 826 shown in FIG. 25C2 has an insulating layer 729 over which a backgate electrode is formed. The transistor 724 differs from the transistor 825 in that it has an electrode 723 that can function as a transistor.

[0352] [Top-gate transistor] FIG. 26A1 shows a transistor 830, which is a type of top-gate transistor. A cross-sectional view of the transistor 830 is shown. The transistor 830 has a semiconductor layer 742 over an insulating layer 772. An electrode 744 a in contact with a part of the semiconductor layer 742 and a semiconductor layer 744 b are provided on the dielectric layer 742 and the insulating layer 772 . The semiconductor layer 742 has an electrode 744b in contact with a part of the conductor layer 742. An insulating layer 726 is provided over the electrode 744b, and an electrode 746 is provided over the insulating layer 726.

[0353] The transistor 830 is connected between the electrodes 746 and 744a, and between the electrodes 746 and 744b. Since the electrodes 746 and 744a do not overlap, the parasitic capacitance between the electrodes 746 and 744a and the This can reduce the parasitic capacitance between the electrode 746 and the electrode 744b. After forming the semiconductor layer 742, the electrode 746 is used as a mask to introduce impurities 755 into the semiconductor layer 742. By introducing the impurity into the semiconductor layer 742, an impurity region is formed in a self-aligned manner in the semiconductor layer 742. (See FIG. 26A3.) According to one embodiment of the present invention, the electrical characteristics Therefore, a transistor having a good characteristic can be realized.

[0354] The introduction of the impurity 755 can be performed by an ion implantation device, an ion doping device, or a plasma treatment device. This can be done using a processing device.

[0355] The impurity 755 may be, for example, at least one of Group 13 elements or Group 15 elements. When an oxide semiconductor is used for the semiconductor layer 742, At least one of rare gases, hydrogen, and nitrogen is used as impurity 755. It is also possible.

[0356] The transistor 831 in FIG. 26A2 has an electrode 723 and an insulating layer 727. The transistor 831 is formed on the insulating layer 772. The electrode 723 has an insulating layer 727 formed on the electrode 723. The electrode 723 has a Therefore, the insulating layer 727 can function as a gate insulating layer. The insulating layer 727 can function as a gate insulating layer. It can be formed.

[0357] Like transistor 811, transistor 831 has a large on-state current relative to its area. In other words, for the required on-current, According to one embodiment of the present invention, the area occupied by the transistor 831 can be reduced. Therefore, according to one aspect of the present invention, a highly integrated semiconductor device can be manufactured. A conductor device can be realized.

[0358] The transistor 840 illustrated in FIG. 26B1 is a top-gate transistor. The transistor 840 is a semiconductor device after forming the electrodes 744a and 744b. The transistor 830 differs from the transistor 830 in that the layer 742 is formed. The transistor 841 has an electrode 723 and an insulating layer 727. In the transistors 840 and 841, a part of the semiconductor layer 742 A portion of the semiconductor layer 742 is formed on the electrode 744a, and another portion of the semiconductor layer 742 is formed on the electrode 744b. do.

[0359] Like transistor 811, transistor 841 has a large on-state current relative to its area. In other words, for the required on-current, According to one embodiment of the present invention, the area occupied by the transistor 841 can be reduced. Therefore, according to one aspect of the present invention, a highly integrated semiconductor device can be manufactured. A conductor device can be realized.

[0360] The transistor 842 illustrated in FIG. 27A1 is a top-gate transistor. In the transistor 842, the insulating layer 729 is formed, and then the electrode 744a and the electrode 744b are The transistor 830 and the transistor 840 are different in that the electrode 744 is formed. a and the electrode 744b are formed by insulating layers 728 and 729 through openings. The insulating layer 742 is electrically connected to the insulating layer 742 .

[0361] In addition, a portion of the insulating layer 726 that does not overlap the electrode 746 is removed, and the electrode 746 and the remaining insulating layer 726 are separated. Using the layer 726 as a mask, impurities 755 are introduced into the semiconductor layer 742 to form a semiconductor The impurity region can be formed in the semiconductor layer 742 in a self-aligned manner. (See FIG. 27A3.) In the transistor 842, the insulating layer 726 covers an end of the electrode 746. When the impurity 755 is introduced into the semiconductor layer 742, the semiconductor layer The impurity concentration in the region where the impurity 755 is introduced through the insulating layer 726 of 742 is 26. Therefore, the semiconductor layer 742 In the region not overlapping with the electrode 746, a LDD (Lightly Doped Drain) is formed. A region is formed.

[0362] The transistor 843 shown in FIG. 27A2 has an electrode 723. The transistor 843 has an electrode 723 formed on a substrate 771. The electrode 723 overlaps with the semiconductor layer 742 with an insulating layer 772 interposed therebetween. It can function as such.

[0363] In addition, the transistor 844 shown in FIG. 27B1 and the transistor As in the case of the electrode 845, the insulating layer 726 may be entirely removed from areas that do not overlap with the electrode 746. In addition, the transistor 846 shown in FIG. 27C1 and the transistor 847 shown in FIG. The insulating layer 726 may be left as shown at 847 .

[0364] After forming the electrode 746, the transistors 842 to 847 are also formed with the electrode 74. 6 as a mask, impurities 755 are introduced into the semiconductor layer 742, forming the semiconductor layer 7 According to one aspect of the present invention, an impurity region can be formed in a self-aligned manner in the electrode 42. According to one aspect of the present invention, a transistor having good thermal characteristics can be realized. A highly integrated semiconductor device can be realized.

[0365] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0366] (Embodiment 4) In this embodiment, a display model including the display device 10 or the display device 200 according to one embodiment of the present invention is The module and electronic device will be described with reference to the drawings.

[0367] The display module 8000 shown in FIG. 28 includes an upper cover 8001 and a lower cover 8002. Between them, the touch panel 8004 connected to the FPC 8003, the frame 8009, and the printer The device has a substrate 8010 and a battery 8011.

[0368] A display panel, a touch panel, or a touch panel module according to one embodiment of the present invention is, for example, , can be used in the touch panel 8004.

[0369] The upper cover 8001 and the lower cover 8002 are designed to fit the size of the touch panel 8004. The shape and dimensions can be changed appropriately.

[0370] The touch panel 8004 is a resistive or capacitive touch panel, In addition, the opposing substrate (sealing substrate) of the touch panel 8004 can be used by overlapping it with the It is also possible to provide a touch panel function. It is also possible to provide an optical sensor in each pixel of the display 4 to make it into an optical touch panel.

[0371] In addition, when a transmissive or semi-transmissive liquid crystal element is used, the touch panel 8004 and the front panel A backlight may be provided between the frames 8009. The backlight has a light source. The light source may be disposed on the backlight, or may be disposed at the end of the backlight. In addition, a light diffusing plate may be used. When using light-emitting elements or a reflective panel, a backlight is not provided. This may also be configured.

[0372] The frame 8009 protects the touch panel 8004 and also supports the printed circuit board 8010. It also functions as an electromagnetic shield to block electromagnetic waves generated by the operation. The frame 8009 may function as a heat sink.

[0373] The printed circuit board 8010 includes a power supply circuit, a signal circuit for outputting a video signal, and a clock signal. The power supply circuit is provided with a signal processing circuit. Alternatively, the power source may be a battery 8011 provided separately. , this can be omitted when using a commercial power source.

[0374] In addition, the touch panel 8004 includes additional components such as a polarizing plate, a retardation plate, and a prism sheet. It may also be provided as such.

[0375] Display panel, light-emitting panel, sensor panel, touch panel, and touch panel according to one embodiment of the present invention Using the input / output device, input device, display device, or input / output device, electronic equipment or lighting equipment can be created. A display device having a curved surface can be manufactured by using the input device, the display device, or the input / output device of one embodiment of the present invention. In addition, the input device, display device, and lighting device of one embodiment of the present invention can be manufactured. Using the display device or input / output device, flexible and highly reliable electronic devices and lighting devices can be created. In addition, a touch sensor can be manufactured using the input device or the input / output device of one embodiment of the present invention. Electronic devices and lighting devices with improved detection sensitivity can be manufactured.

[0376] Examples of electronic devices include television sets (also known as televisions or television receivers). ), computer monitors, digital cameras, digital video cameras, digital photo frames, mobile phones (also called mobile phones or mobile phone devices), portable games Examples of such devices include machines, portable information terminals, audio playback devices, and large game machines such as pachinko machines.

[0377] In addition, when the electronic device or lighting device of one embodiment of the present invention is flexible, it can be used in a house or a building. It can also be installed along the curved surfaces of walls or exterior walls, or the interior or exterior of a car. be.

[0378] Further, the electronic device of one embodiment of the present invention may include a secondary battery and may perform non-contact power transmission. It is preferable that the secondary battery can be charged using the same.

[0379] As the secondary battery, for example, a lithium polymer battery (lithium ion battery) using a gel electrolyte is used. Lithium-ion batteries such as lithium-ion polymer batteries, nickel-metal hydride batteries, nickel-cadmium batteries, organic radio Examples of such batteries include calcium batteries, lead-acid batteries, air batteries, nickel-zinc batteries, and silver-zinc batteries.

[0380] The electronic device according to one embodiment of the present invention may include an antenna. By using the battery, it is possible to display images, information, etc. on the display unit. , the antenna may be used for contactless power transfer.

[0381] 29(A) to 29(H), 30(A) and 30(B) show electronic devices. These electronic devices are composed of a housing 5000, a display unit 5001, a speaker 5003, and a ED lamp 5004, operation keys 5005 (including a power switch or an operation switch), Connection terminal 5006, sensor 5007 (force, displacement, position, speed, acceleration, angular velocity, rotation speed, Distance, light, liquid, magnetism, temperature, chemicals, sound, time, hardness, electric field, current, voltage, power, radiation (including functions to measure radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays.) It can have a clophon 5008, etc.

[0382] FIG. 29(A) shows a mobile computer, which in addition to the above includes a switch 5009 , infrared port 5010, etc.

[0383] FIG. 29(B) shows a portable image reproducing device (e.g., a DVD reproducing device) equipped with a recording medium. In addition to the above, it has a second display unit 5002, a recording medium reading unit 5011, etc. It is possible.

[0384] FIG. 29(C) shows a television device, which includes a stand 5012 and other components in addition to those described above. The television device can be operated by using an operation switch provided in the housing 5000. This can be done by a separate remote control device 5013. The channel and volume can be controlled by the operation keys provided on the display unit 5001. The image displayed on the remote control unit 5013 can be operated. A display unit for displaying information output from the controller 5013 may be provided.

[0385] FIG. 29(D) shows a portable game machine, which includes, in addition to the above, a recording medium reading unit 5011, etc.

[0386] FIG. 29(E) shows a digital camera with a television receiving function. In addition to the above, It may have a taper 5014, a shutter button 5015, an image receiving unit 5016, etc.

[0387] FIG. 29(F) shows a portable gaming machine, which, in addition to the above, has a second display unit 5002, a recorder It may have a medium reading unit 5011, etc.

[0388] FIG. 29(G) shows a portable television receiver, which, in addition to the above, has a function for transmitting and receiving signals. 5017, etc.

[0389] FIG. 29(H) shows a wristwatch-type information terminal, which includes, in addition to the above, a band 5018, a clasp, The display 5000 may have a gold plated 5019, etc. The display unit 5001 has a non-rectangular display area. 5020, other icons 5021, etc. can be displayed.

[0390] Figure 30(A) shows a digital signage. Figure 30(B) shows a digital signage attached to a cylindrical pillar.

[0391] The electronic devices shown in FIGS. 29(A) to 29(H), 30(A) and 30(B) are It can have various functions. For example, it can store various information (still images, videos, text images, etc.) Functions for displaying the date, time, etc. on the display, touch panel function, calendar, etc. Functions that control processing using various software (programs), wireless communication devices Functions for connecting to various computer networks using wireless communication functions, wireless communication devices The function of transmitting or receiving various data using the functions, the program recorded on the recording medium The system or data can be read and displayed on the display unit. In an electronic device having multiple display units, one display unit is used mainly to display image information, A function to display text information mainly on another display unit, or to display multiple displays with parallax taken into consideration By displaying an image that takes this into consideration, it is possible to provide a function for displaying a stereoscopic image, etc. Furthermore, in electronic devices having an image receiving unit, the function of taking still images and the function of taking moving images are also provided. Functions for automatically or manually correcting captured images, and for storing captured images on a recording medium (external or The camera has the functions of storing the captured image on a memory card (built into the camera), displaying the captured image on the display unit, etc. In addition, as shown in Figs. 29(A) to 29(H), 30(A) and 30(B), The functions that an electronic device can have are not limited to these, and it may have a variety of functions. can.

[0392] 31A to 31E show an example of an electronic device having a curved display portion 7000. The display unit 7000 has a curved display surface, and displays images along the curved display surface. The display unit 7000 may be flexible.

[0393] The display unit 7000 may be a functional panel, a display panel, a light-emitting panel, a sensor panel, or the like according to one embodiment of the present invention. The display device is manufactured using a panel, a touch panel, a display device, an input / output device, or the like. This makes it possible to provide an electronic device that has a curved display portion and is highly reliable.

[0394] An example of a mobile phone is shown in FIG. 31A. A mobile phone 7100 includes a housing 7101, a display 7000, operation button 7103, external connection port 7104, speaker 7105, microphone 7106 etc.

[0395] A mobile phone 7100 shown in FIG. 31A includes a touch sensor in a display portion 7000. The touch sensor 7100 shown in FIG. All operations, such as making a call or entering text, can be performed with your finger or a stylus. This can be done by touching the display 7000.

[0396] In addition, the operation button 7103 can be used to turn the power on and off, and to display the display unit 7000. For example, from the email composition screen, you can change the type of image displayed on the You can then switch to the main menu screen.

[0397] FIG. 31B shows an example of a television device. The television device 7200 has a housing 7 A display unit 7000 is built into the display unit 201. Here, the display unit 7000 is supported by a stand 7203. The configuration shown supports the 7201.

[0398] The television device 7200 shown in FIG. 31B is operated by an operation switch provided in the housing 7201. This can be done by a separate remote control 7211 or the display unit 700. The display unit 7000 may be provided with a touch sensor, and the operation may be performed by touching the display unit 7000 with a finger or the like. The remote control unit 7211 displays information output from the remote control unit 7211. The remote control 7211 may have an operation key or a touch panel. The channel and volume can be controlled by the control panel, and the image displayed on the display unit 7000 can be You can manipulate the image.

[0399] The television device 7200 includes a receiver, a modem, and the like. In addition, it is possible to receive general television broadcasts via a wired or wireless connection via a modem. By connecting to a wired communication network, one-way (sender to receiver) or two-way It is also possible to communicate information in one direction (between a sender and a receiver, or between receivers). do.

[0400] 31(C1) to 31(E) show examples of mobile information terminals. Each mobile information terminal has: The device has a housing 7301 and a display unit 7000. In addition, the device has an operation button, an external connection port, a speaker, and the like. The display unit 7000 may include a touch panel, a microphone, an antenna, a battery, etc. The mobile information terminal is operated by touching the display unit 7000 with a finger or a stylus. This can be done by

[0401] FIG. 31C1 is a perspective view of a portable information terminal 7300, and FIG. 31(D) is a perspective view of a mobile information terminal 7310. FIG. FIG. 31E is a perspective view of the portable information terminal 7320.

[0402] The portable information terminal exemplified in this embodiment is, for example, a telephone, a notebook, an information viewing device, etc. Specifically, the device can be used as a smartphone. The portable information terminal exemplified in this embodiment may be, for example, a mobile phone, an electronic mail, or the like. It can be used for a variety of purposes, including browsing and writing documents, playing music, communicating on the Internet, and playing computer games. Various applications can be executed.

[0403] The mobile information terminal 7300, the mobile information terminal 7310, and the mobile information terminal 7320 are Image information can be displayed on multiple surfaces. For example, see Fig. 31(C1) and Fig. 31(D). As shown in FIG. 7, three operation buttons 7302 are displayed on one side, and information 7303 shown in a rectangle is displayed. In Fig. 31(C1) and Fig. 31(C2), the mobile information terminal In FIG. 31(D), information is displayed on the side of the mobile information terminal. In addition, information may be displayed on three or more faces of a mobile information terminal. In this example, information 7304, information 7305, and information 7306 are displayed on different sides. Here is an example.

[0404] An example of such information is notifications from social networking services (SNS). , display to notify of incoming e-mails or telephone calls, title or sender name of e-mails, date The time, time of day, battery level, antenna reception strength, etc. Instead of information, operation buttons, icons, etc. may be displayed at the position where the information is displayed.

[0405] For example, the user of the portable information terminal 7300 may carry the portable information terminal 7300 in a breast pocket of a garment. When the item is stored, the display (information 7303 in this example) can be confirmed.

[0406] Specifically, the telephone number or name of the caller of the incoming call is recorded on the mobile information terminal 7300. The display is placed in a position that can be observed from above. The user takes the portable information terminal 7300 out of his / her pocket. You can check the display and decide whether or not to answer the call without having to take out your phone.

[0407] FIG. 31(F) to FIG. 31(H) show an example of a lighting device having a curved light-emitting portion. do.

[0408] The light-emitting portion of each of the lighting devices illustrated in FIGS. 31(F) to 31(H) is Functional panels, display panels, light-emitting panels, sensor panels, touch panels, display devices, or input According to one aspect of the present invention, a light emitting device having a curved light emitting portion and a signal output device is manufactured using the same. A highly reliable lighting device can be provided.

[0409] The lighting device 7400 shown in FIG. 31(F) includes a light-emitting unit 7402 having a wavy light-emitting surface. This makes it a highly designed lighting device.

[0410] The light-emitting portion 7412 of the lighting device 7410 shown in FIG. 31(G) has two convexly curved The light emitting parts are arranged symmetrically. It can illuminate in all directions.

[0411] The lighting device 7420 shown in FIG. 31(H) has a light-emitting portion 7422 that is curved in a concave shape. Therefore, the light emitted from the light emitting unit 7422 is focused on the front surface of the lighting device 7420. This type of lighting is suitable for illuminating a certain area. This has the effect of making it difficult to

[0412] In addition, the lighting devices 7400, 7410, and 7420 each have light-emitting The light emitting unit may be made of a flexible material or a movable frame. The light emitting surface of the light emitting portion may be freely curved depending on the application.

[0413] The lighting device 7400, the lighting device 7410, and the lighting device 7420 each have an operation switch. The light emitting device has a base 7401 having a switch 7403 and a light emitting unit supported by the base 7401 .

[0414] In this embodiment, the illumination device in which the light-emitting unit is supported by the base is illustrated. The housing including the unit may be fixed to a ceiling or hung from the ceiling. The light-emitting surface can be curved, so a specific area can be illuminated by curving the light-emitting surface in a concave shape. It can illuminate a small area, or the light-emitting surface can be curved convexly to illuminate an entire room.

[0415] FIG. 32(A1) to FIG. 32(I) show a portable information device having a flexible display portion 7001. 1 shows an example of a terminal.

[0416] The display unit 7001 may be a functional panel, a display panel, a light-emitting panel, a sensor panel, or the like, according to one embodiment of the present invention. The device is manufactured using a panel, a touch panel, a display device, an input / output device, etc. Display devices or input / output devices that can be bent to a diameter of 0.01 mm or more and 150 mm or less The display unit 7001 may be provided with a touch sensor, and the display unit 7001 may be touched by a finger or the like. By touching the touch panel 001, the mobile information terminal can be operated. It is possible to provide an electronic device that has a flexible display portion and is highly reliable.

[0417] FIG. 32(A1) is a perspective view showing an example of a portable information terminal, and FIG. 32(A2) is a perspective view showing an example of a portable information terminal. A side view showing an example of an information terminal. The mobile information terminal 7500 includes a housing 7501, a display unit 7 001, a drawer member 7502, an operation button 7503, etc.

[0418] The portable information terminal 7500 has a flexible display unit wound in a roll shape in a housing 7501. It has 7001.

[0419] In addition, the portable information terminal 7500 can receive video signals using a built-in control unit. The received image can be displayed on the display unit 7001. The battery is built in. The housing 7501 is also provided with a terminal section for connecting a connector. Alternatively, the video signal and power may be supplied directly from the outside via wires.

[0420] In addition, the operation button 7503 can be used to turn the power on and off and to change the image to be displayed. In addition, in FIG. 32(A1) to FIG. 32(B), a portable information terminal In the example shown, the operation buttons 7503 are arranged on the side of the mobile information terminal 7500. It may be placed on the same surface (front surface) as the display surface of the terminal 7500, or on the back surface.

[0421] FIG. 32B shows a mobile phone with the display unit 7001 pulled out by a pull-out member 7502. In this state, a video can be displayed on the display unit 7001. 32(A1) in which a part of the display unit 7001 is wound in a roll shape, and 32(B) in which the portable information terminal 001 is pulled out by the pull-out member 7502. 7500 may be configured to display differently. For example, in the state of FIG. 32(A1), By making the rolled-up portion of the display unit 7001 invisible, the mobile information terminal 750 It can reduce power consumption to 0.

[0422] When the display unit 7001 is pulled out, the display surface of the display unit 7001 is made flat. In order to fix the display unit 7001 to the display panel 7002, a reinforcing frame may be provided on the side of the display unit 7001.

[0423] In addition to this configuration, a speaker is provided on the housing, and the audio signal received together with the video signal is output. The configuration may be such that sound is outputted.

[0424] 32(C) to 32(E) show an example of a foldable portable information terminal. 2(C) shows the device in an unfolded state, and FIG. 32(D) shows the device in an unfolded or folded state. In the state in which the mobile information terminal is changing from one side to the other, as shown in FIG. 32(E), the mobile information terminal is in the folded state. The portable information terminal 7600 is highly portable when folded and can be easily carried when unfolded. When in this state, the large, seamless display area provides excellent visibility.

[0425] The display unit 7001 is supported by three housings 7601 connected by hinges 7602. By bending the two housings 7601 via the hinge 7602, The information terminal 7600 can be reversibly transformed from an unfolded state to a folded state. .

[0426] An example of a foldable portable information terminal is shown in Fig. 32(F) and Fig. 32(G). In FIG. 32(F), the display unit 7001 is folded inward. In FIG. The portable information terminal 7650 is folded so that the display portion 7001 is on the outside. The portable information terminal 7650 has a display portion 7001 and a non-display portion 7651. When the 650 is not in use, the display unit 7001 can be folded inward. It can prevent dirt and scratches on the 7001.

[0427] FIG. 32(H) shows an example of a flexible portable information terminal. The portable information terminal 7700 is The device has a housing 7701 and a display unit 7001. , a button 7703b, a speaker 7704a which is an audio output means, a speaker 7704b, The device may have an external connection port 7705, a microphone 7706, etc. The 00 can be equipped with a flexible battery 7709. The battery 7709 is For example, it may be disposed so as to overlap the display unit 7001 .

[0428] The housing 7701, the display portion 7001, and the battery 7709 are flexible. The portable information terminal 7700 can be bent into a desired shape or twisted. For example, the portable information terminal 7700 has a display unit 7001 on the inside or It can be folded outward and used. In this manner, the housing 7701 and the display unit 700 can be used in a rolled-up state. Since the portable information terminal 7700 can freely deform, even if it is dropped or has the advantage that it is less likely to be damaged even if an unintended external force is applied.

[0429] In addition, since the portable information terminal 7700 is lightweight, the upper part of the housing 7701 can be held with a clip or the like. Or, the housing 7701 can be fixed to the wall with a magnet or the like. , and can be conveniently used in a variety of situations.

[0430] FIG. 32(I) shows an example of a wristwatch-type portable information terminal. The device includes a keyboard 7801, a display unit 7001, an input / output terminal 7802, and an operation button 7803. The handheld terminal 7801 functions as a housing. The battery 7805 may be, for example, a display unit. It may be arranged overlapping with 7001 or band 7801.

[0431] The band 7801, the display portion 7001, and the battery 7805 are flexible. Therefore, the portable information terminal 7800 can be easily curved into a desired shape.

[0432] The operation button 7803 is used to set the time, turn the power on and off, and turn wireless communication on and off. It has various functions such as operation, silent mode activation and deactivation, power saving mode activation and deactivation, etc. For example, the operating system installed in the portable information terminal 7800 can The function of the operation button 7803 can also be freely set using the stem.

[0433] In addition, by touching an icon 7804 displayed on the display unit 7001 with a finger or the like, the application You can start the application.

[0434] In addition, the portable information terminal 7800 can perform short-distance wireless communication in accordance with a communication standard. For example, by communicating with a wireless headset, You can also make free calls.

[0435] The portable information terminal 7800 may also have an input / output terminal 7802. If you have a 7802, you can directly exchange data with other information terminals via a connector. Charging can also be performed via the input / output terminal 7802. The charging operation of the portable information terminal illustrated in the embodiment is performed by non-contact power transmission without using an input / output terminal. It may be done more.

[0436] FIG. 33(A) to FIG. 33(C) show an example of a foldable wristwatch-type portable information terminal. The mobile information terminal 7900 includes a display unit 7901, a housing 7902, a housing 7903, a band 7904, and a 904, operation buttons 7905, etc.

[0437] As shown in FIG. 33A, the portable information terminal 7900 has a housing 7902 and a housing 7903. As shown in FIG. 33(B), the housing 7902 is lifted from the stacked state. As shown in FIG. 33C, the display portion 7901 is reversibly transformed into an expanded state. Therefore, the portable information terminal 7900 can be used, for example, by folding the display unit 7901. It can be used in a folded state, and by unfolding the display unit 7901, The display area can be expanded.

[0438] In addition, the display portion 7901 has a function as a touch panel. The mobile information terminal 7900 can be operated by touching it. Press, rotate, or slide up, down, toward you, or toward the back to change the The information terminal 7900 can be operated.

[0439] As shown in FIG. 33A, when the housing 7902 and the housing 7903 are overlapped with each other, It is preferable to have a locking mechanism so that the body 7902 and the housing 7903 do not come apart unintentionally. At this time, the locked state can be released by, for example, pressing the operation button 7905. It is preferable to use a spring or other device that can be used to restore the locked state. When released, it automatically changes from the state shown in Figure 33(A) to the state shown in Figure 33(C). Alternatively, a magnet may be used instead of the lock mechanism to secure the housing 7902 and the housing The relative positions of the housing 7902 and the housing 7903 may be fixed by using a magnet. The housing 7903 can be detached.

[0440] In FIG. 33(A) to FIG. 33(C), the direction is approximately perpendicular to the bending direction of the band 7904. 33(D) and 33(E), the display portion 7901 can be opened in the direction As shown in FIG. 7, the display unit 7901 can be unfolded in a direction substantially parallel to the bending direction of the band 7904. In this case, the display unit 7901 may be folded so as to be wrapped around the band 7904. It may also be used in a curved form.

[0441] The electronic device described in this embodiment has a display unit for displaying some information. The display unit is characterized in that the display panel, touch panel, or touch panel according to one embodiment of the present invention is used. A display device such as a touch panel module can be applied.

[0442] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination. [Explanation of symbols]

[0443] 10 Display device 11 Opening 11A opening 11B opening 12 Opening 15 areas 15A area 21 Substrate 23 Pixel electrode 24 EL layer 25 Conductive Layer 31 Substrate 32 Display section 32A area 32B area 34 Circuit 35 Wiring 39 Adhesive layer 40 Light emitting element 42 FPC 43 IC 51a Colored layer 51b Colored layer 52 Light blocking layer 60 Liquid crystal element 70 Transistor 71 Conductive layer 72 Semiconductor layer 73 Insulating Layer 74a Conductive layer 74b Conductive layer 81 Insulating layer 82 Insulating layer 82A Protrusion 83 Insulating Layer 100 Touch Panel 111 Conductive layer 112 EL layer 113 Conductive Layer 130 Polarizing Plate 131 Colored layer 131a Colored layer 131b Colored layer 132 Light blocking layer 133 Light blocking layer 134 Colored layer 135 Structure 136 Insulating Layer 141 Adhesive layer 142 Adhesive layer 146 Conductive Film 147 Conductive Film 148 Conductive Film 149 Nanowires 150 Input Device 151 Electrode 152 Electrode 153 Bridge Electrode 155 Wiring 156 Wiring 157 FPC 158 IC 160 Substrate 161 Insulating Layer 162 Insulating Layer 163 Insulating Layer 164 Insulating Layer 165 Adhesive layer 168 IC 169 Connection 170 Substrate 171 Substrate 172 Adhesive layer 173 Insulating Layer 181 Substrate 182 Adhesive layer 183 Insulating Layer 191 Conductive Layer 192 Conductive Layer 193 Liquid Crystal 194 Conductive Layer 195 Insulating Layer 200 Display device 201 Transistor 202 Transistor 203 Capacitive element 204 Terminal section 205 Transistor 206 Transistor 207 Terminal section 210 pixels 211 Insulating layer 212 Insulating layer 213 Insulating Layer 214 Insulating layer 219 Opening 220 Insulating layer 221 Conductive Layer 222 Conductive Layer 223 Conductive Layer 224 Conductive Layer 231 Semiconductor Layer 242 Connection Layer 243 Connectors 244 Structure 251 Opening 252 Connection 601 Pulse voltage output circuit 602 Current detection circuit 603 capacity 621 Electrode 622 Electrode 723 Electrode 726 Insulating Layer 727 Insulation Layer 728 Insulating Layer 729 Insulation Layer 741 Insulation Layer 742 Semiconductor layer 744a electrode 744b electrode 746 Electrode 755 Impurities 771 Circuit Board 772 Insulation Layer 810 Transistor 811 Transistor 820 Transistor 821 Transistor 825 Transistor 826 Transistor 830 Transistor 831 Transistor 840 Transistor 841 Transistor 842 Transistor 843 Transistor 844 Transistor 845 Transistor 846 Transistor 847 Transistor 5000 cabinet 5001 Display section 5002 Display section 5003 Speaker 5004 LED Lamp 5005 Operation key 5006 Connection terminal 5007 Sensor 5008 Microphone 5009 Switch 5010 Infrared port 5011 Recording medium reading unit 5012 Stand 5013 Remote control device 5014 Antenna 5015 Shutter button 5016 Image receiving unit 5017 charger 5018 Band 5019 Clasp 5020 Icon 5021 Icon 7000 Display 7001 Display section 7100 Mobile Phone 7101 Case 7103 Operation button 7104 External connection port 7105 Speaker 7106 Microphone 7200 Television Equipment 7201 Case 7203 Stand 7211 Remote control device 7300 Mobile Information Terminal 7301 Case 7302 Operation button 7303 Information 7304 Information 7305 Information 7306 Information 7310 Portable Information Terminals 7320 Mobile Information Terminal 7400 Lighting Equipment 7401 Daibu 7402 Light emitting part 7403 Operation switch 7410 Lighting equipment 7412 Light emitting part 7420 Lighting equipment 7422 Light emitting part 7500 Mobile Information Terminal 7501 Case 7502 Drawer parts 7503 Operation button 7600 Mobile Information Terminal 7601 Case 7602 Hinge 7650 Mobile Information Terminal 7651 Hidden part 7700 Portable Information Terminal 7701 Case 7703a Button 7703b Button 7704a Speaker 7704b Speaker 7705 External connection port 7706 Mike 7709 Battery 7800 Mobile Information Terminal 7801 Band 7802 Input / output terminal 7803 Operation button 7804 Icons 7805 Battery 7900 Portable Information Terminal 7901 Display section 7902 Case 7903 Case 7904 Band 7905 Operation button 8000 Display Module 8001 Top cover 8002 Lower cover 8003 FPC 8004 Touch Panel 8009 Frame 8010 Printed Circuit Board 8011 Battery

Claims

[Claim 1] a first pixel electrode, a second pixel electrode, a first insulating layer, a second insulating layer, and an adhesive layer; the first pixel electrode and the second pixel electrode are provided on the first insulating layer; the second insulating layer is provided on the first insulating layer, the first pixel electrode, and the second pixel electrode; the adhesive layer is provided on the first insulating layer, the second insulating layer, the first pixel electrode, and the second pixel electrode; the first insulating layer has a first opening; a bottom surface of the first opening is located above a bottom surface of the first insulating layer; the second insulating layer has a second opening; the second opening is integrated with the first opening by penetrating the second insulating layer; the first opening and the second opening are provided between the first pixel electrode and the second pixel electrode, When viewed from above, an outer periphery of the second opening is located inside an outer periphery of the first opening, The adhesive layer has a region that overlaps with the second insulating layer below the second insulating layer.

Images