Deposition method and deposition system

Abstract

To provide a deposition method and a deposition system, capable of forming a film with a high productivity and a good film quality when forming a chemical compound film such as a SiN film.SOLUTION: A deposition method for forming a film by using a batch type film formation device having a first chamber and a sheet type modification device having a second chamber, includes the steps of: conveying a plurality of substrates into a first chamber; forming a chemical compound film on the plurality of substrates conveyed into the first chamber; forming a protection film containing carbon on the plurality of substrates in the first chamber; conveying the plurality of substrates on which the protection film is formed, from the first chamber; conveying one or some of the substrates conveyed from the first chamber, into the second chamber of the sheet type modification device; and executing a modification treatment on one or some of the substrates by the second chamber. In the step of executing the modification processing, the modification film is formed.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to a film formation method and a film formation system. [Background technology]

[0002] Semiconductor devices include insulating films and hard masks, and compound films such as silicon nitride films (SiN films) are often used for these.

[0003] Known techniques for depositing SiN films include a technique for depositing films simultaneously on multiple substrates by plasma-assisted ALD (Atomic Layer Deposition) using a vertical batch-type apparatus (e.g., Patent Document 1), and a technique for depositing films one by one on substrates by plasma-assisted ALD using a single-wafer apparatus (e.g., Patent Document 2). [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Patent No. 6656103 [Patent Document 2] JP 2019-163497 A Summary of the Invention [Problem to be solved by the invention]

[0005] The present disclosure provides a film formation method and a film formation system that are capable of forming a compound film such as a SiN film with high productivity and good film quality. [Means for solving the problem]

[0006] A film formation method according to one embodiment of the present disclosure is a film formation method for forming a film using a batch-type film formation apparatus having a first chamber and a single-wafer type modification apparatus having a second chamber, the method including the steps of: loading a plurality of substrates into the first chamber; depositing a compound film on the plurality of substrates loaded into the first chamber; forming a protective film containing carbon on the plurality of substrates in the first chamber; unloading the plurality of substrates on which the protective film has been formed from the first chamber; loading one or more substrates of the plurality of substrates unloaded from the first chamber into the second chamber of the single-wafer type modification apparatus; and performing a modification treatment on the one or more substrates in the second chamber, where a modified film is formed by the modification treatment step. Effect of the Invention

[0007] According to the present disclosure, there is provided a film formation method and a film formation system that are capable of forming a compound film such as a SiN film with high productivity and good film quality. [Brief description of the drawings]

[0008] [Figure 1] 1 is a flowchart showing a first embodiment of a film forming method. [Diagram 2] 1A to 1C are process cross-sectional views illustrating an example of main steps of a film forming method according to a first embodiment of the present invention. [Diagram 3] 5A to 5C are process cross-sectional views showing another example of main steps of the film forming method according to the first embodiment. [Figure 4] 5A to 5C are process cross-sectional views illustrating still another example of main steps of the film forming method according to the first embodiment. [Diagram 5] 5 is a flowchart showing a second embodiment of a film forming method. [Figure 6] 5A to 5C are process cross-sectional views illustrating an example of main steps of a film forming method according to a second embodiment of the present invention. [Figure 7] 1 is a block diagram illustrating an example of a film formation system used to carry out a film formation method. [Figure 8]8 is a vertical cross-sectional view showing an example of a batch-type film forming apparatus in the film forming system of FIG. 7. [Figure 9] 9 is a horizontal cross-sectional view of the batch-type film forming apparatus shown in FIG. 8. [Figure 10] 8 is a vertical cross-sectional view showing an example of a single-wafer type modifying apparatus in the film forming system of FIG. 7. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Hereinafter, an embodiment will be described with reference to the accompanying drawings.

[0010] <Film formation method> [First embodiment] First, a first embodiment of the film forming method will be described. FIG. 1 is a flow chart showing a first embodiment of a film forming method, and FIG. 2 is a process cross-sectional view showing main steps of the first embodiment of the film forming method.

[0011] In the first embodiment, a film is formed using a film formation system including a batch-type film formation apparatus having a first chamber and a single-wafer type modification apparatus having a second chamber.

[0012] A batch-type film forming apparatus is an apparatus that performs film forming processing on a plurality of substrates, about 50 or more, at once. As a batch-type film forming apparatus, a vertical film forming apparatus that performs film forming on a plurality of substrates (for example, about 50 to 175 substrates) stacked vertically and arranged in a chamber can be used.

[0013] A single-wafer type reforming device is one that performs reforming processing on a single substrate or on several substrates (up to about four) on the same plane. As a single-wafer type reforming device, a stage is provided in a chamber, and one or several substrates are placed on the stage to perform reforming processing.

[0014] First, a plurality of substrates are loaded into a first chamber of a batch-type film forming apparatus (step ST1). As shown in Fig. 2(a), the substrate S has a base body 201. Other films may be formed on the base body 201. The base body 201 is not particularly limited, but a semiconductor base body such as silicon is exemplified as a typical example.

[0015] Next, a compound film is formed by ALD on the substrates carried into the first chamber (step ST2). The compound film may be a film containing nitrogen or a film containing oxygen and carbon. In this embodiment, the formed compound film and the modified compound film have almost the same composition except for impurities. Film formation by ALD is performed by alternately supplying a source gas and a reactive gas to the first chamber, and repeating adsorption of the source gas and reaction by the reactive gas. FIG. 2(b) shows a state in which a compound film 202 is formed on the base 201 of the substrate S shown in FIG. 2(a). Although the case of forming a compound film by ALD is illustrated here, the compound film may be formed by CVD.

[0016] The compound film is exemplified by those used as insulating films, hard masks, etc. When the compound film is a film containing nitrogen, it may be any of SiN film, SiCN film, SiON film, SiOCN film, BN film, and BCN film, and when it is a film containing oxygen and carbon, it may be a SiOC film. The SiOCN film is also a film containing oxygen and carbon.

[0017] In the case of the SiN film, the SiCN film, the SiON film, the SiOCN film, and the SiOC film, a Si raw material gas is used as the raw material gas. The Si raw material gas may contain oxygen, nitrogen, and carbon in the raw material gas molecular skeleton. In addition, as the reactive gas, a nitrogen-containing gas is used in the case of the SiN film, a nitrogen-containing gas and a carbon-containing gas are used in the case of the SiCN film, and a nitrogen-containing gas and an oxygen-containing gas are used in the case of the SiON film. In addition, a carbon-containing gas and an oxygen-containing gas are used in the case of the SiOC film, and a nitrogen-containing gas, a carbon-containing gas, and an oxygen-containing gas are used in the case of the SiOCN film. The BN film and the BCN film can be formed by using a B raw material gas as the raw material gas, and a nitrogen-containing gas in the case of the BN film, and a nitrogen gas and a carbon-containing gas in the case of the BCN film, as the reactive gas.

[0018] As the Si source gas, a silane compound gas such as SiH4 gas or Si2H6 gas, a chlorosilane compound such as SiH2Cl2 gas, an aminosilane compound such as dimethylaminosilane, a siloxane compound such as TEOS (tetraethoxysilane), an organosilicon compound such as DMDMOS (dimethyldimethoxysilane), TSA (trisilylamine), etc. can be preferably used. When forming a SiN film, a Cl-containing Si compound gas such as a chlorosilane compound can be preferably used as the Si source gas. In addition, as the B source gas, a B2H6 gas, BCl3 gas, an alkylborane gas, etc. can be preferably used. As the nitrogen-containing gas, a NH3 gas, N2 gas, etc. can be used. As the oxygen-containing gas, a O2 gas, a H2O gas, a H2O2 gas, a N2O gas, a NO gas, etc. can be used. As the carbon-containing gas, a hydrocarbon gas such as a C2H4 gas, a C2H2 gas, a C2H6 gas, or a C3H6 gas can be used.

[0019] The film may be formed by plasma-assisted ALD (plasma-assisted CVD in the case of film formation by CVD). The addition of energy from the plasma allows film formation at a lower temperature. In particular, when high energy is required for film formation, it is advantageous to use plasma. When forming a film using plasma, a batch-type plasma-assisted film formation device equipped with a remote plasma source can be used.

[0020] Next, a protective film containing carbon is formed on the substrates after the film formation in the first chamber (step ST3). Fig. 2(c) shows a state in which a protective film 203 containing carbon is formed on the substrate S after the compound film 202 is formed.

[0021] The carbon-containing protective film functions as a film that prevents oxidation of the compound film. The carbon-containing protective film prevents oxidation of the nitrogen-containing film or the oxygen- and carbon-containing film when the substrate is carried out into the atmosphere. The thickness of the carbon-containing protective film is preferably 10 nm or more from the viewpoint of obtaining an effective protective effect. In addition, the thickness is preferably 100 nm or less from the viewpoint of ease of removal.

[0022] A carbon film can be used as the carbon-containing protective film. The carbon-containing protective film can be easily formed by introducing a carbon-containing gas or the like into the first chamber of a batch-type film forming apparatus. When the carbon-containing protective film is a carbon film, the carbon-containing gas can be introduced into the first chamber and the film can be formed by CVD (Chemical Vapor Deposition). As the carbon-containing gas, a hydrocarbon gas such as C2H4 gas, C2H2 gas, C2H6 gas, or C3H6 gas can be used. In addition to the carbon-containing gas, a rare gas such as Ar gas or He gas can be added.

[0023] The protective film containing carbon may be formed by plasma-assisted CVD using plasma. The addition of energy from the plasma allows the film to be formed at a lower temperature. Since the formation of a carbon film requires high energy, it is advantageous to use plasma.

[0024] Next, the plurality of substrates are removed from the first chamber (step ST4). The removed plurality of substrates may be exposed to the atmosphere.

[0025] Next, one or several substrates from the plurality of substrates unloaded from the first chamber are loaded into a second chamber of the single-wafer type modifying apparatus (step ST5).

[0026] Next, the carbon-containing protective film of the substrate is removed in the second chamber (step ST6). The carbon-containing protective film is removed using a gas that does not contain oxygen. The treatment may be plasma ashing using plasma. FIG. 2(d) shows the state in which the carbon-containing protective film 203 of FIG. 2(c) is removed by plasma ashing. A carbon-containing protective film such as a carbon film can be removed relatively easily by plasma ashing. The reason why an oxygen-free gas is used to remove the carbon-containing protective film is that if it is removed using a gas that contains oxygen, the surface of the film exposed after removal will be oxidized.

[0027] As the oxygen-free gas used in the plasma ashing, reducing gases such as H2 gas and NH3 gas can be suitably used. N2 gas may also be used. These may be used alone or in combination of two or more. As the plasma, various plasmas such as capacitively coupled plasma, inductively coupled plasma, and microwave plasma can be used.

[0028] Next, in the second chamber, the substrate from which the carbon-containing protective film has been removed is subjected to a modification process (step ST7). In this embodiment, the modification process is performed on the film exposed after the carbon-containing protective film has been removed, that is, the compound film. As a result, a part or all of the compound film becomes a modified film, that is, a modified compound film. This modification process may be a plasma modification process using plasma. FIG. 2(e) shows a state in which a plasma modification process is performed on the surface of the compound film 202 exposed after the protective film 203 in FIG. 2(d) is removed, and FIG. 2(f) shows a state in which a modified film 202a has been formed by the modification process. Note that FIG. 2(f) shows an example in which the entire compound film 202 is the modified film 202a, but a part of the film 202 may be the modified film 202a. The depth of the modified film 202a may be 20 nm or less.

[0029] In this embodiment, the modification process is a process for improving the film quality of the compound film formed by the batch-type film forming apparatus. Specifically, the modification process, particularly the plasma modification process, removes impurities present in the compound film and eliminates dangling bonds to improve the bonding state of the compounds constituting the compound film.

[0030] A rare gas can be used as the gas used in the plasma modification process. For example, Ar gas, He gas, or a mixture of these can be used. A chemical gas can also be added to the rare gas. As the chemical gas, H2 gas, NH3 gas, N2 gas, hydrocarbon gas, etc. can be used, and these can be used alone or in a mixture of two or more. In addition, when the compound film is a SiOC film or a SiOCN film, one or more oxygen-containing gases, such as O2 gas, H2O gas, H2O2 gas, N2O gas, and NO gas, can be added to the above-mentioned chemical gases. By adding a gas containing oxygen, the amount of oxygen in the compound film can be adjusted. As the plasma used in the plasma modification process, various plasmas such as capacitively coupled plasma, inductively coupled plasma, and microwave plasma can be used.

[0031] According to the film formation method as described above, when a compound film, typically a compound film containing nitrogen or a compound film containing oxygen and carbon, is formed, the film can be formed with high productivity and good film quality.

[0032] Conventionally, when forming a SiN film by ALD, for example, a batch-type film formation apparatus as described in Patent Document 1 is used, which has high productivity because film formation processing is performed on multiple substrates at once, but is disadvantageous in terms of obtaining good film quality with low-temperature film formation, which is currently favored. In particular, a batch-type plasma-assisted film formation apparatus used for forming a SiN film requires the use of remote plasma as the plasma due to the structure of the apparatus, which is disadvantageous in terms of forming a good-quality SiN film with low temperature film formation.

[0033] On the other hand, when forming a SiN film by ALD in a single-wafer deposition apparatus as in Patent Document 2, a high-quality SiN film can be formed even at a low temperature because direct plasma is used. However, it is necessary to repeatedly form atomic layers by alternately supplying the Si raw material and the nitriding gas, which is disadvantageous in terms of productivity.

[0034] Therefore, in this embodiment, a compound film is formed on multiple substrates at once using a batch-type film forming apparatus, a protective film containing carbon for preventing oxidation is formed, and then a modification process is performed on one or several substrates using a dedicated single-wafer type modification apparatus. This makes it possible to obtain a good-quality compound film at a low temperature while maintaining high productivity. In other words, since the basic film formation process is performed using a batch-type film forming apparatus, productivity is high, and even if the quality of the compound film formed at this time is low, a good-quality compound film can be obtained by the subsequent modification process using the single-wafer type modification apparatus.

[0035] In this case, a modification process in a single-wafer type modification apparatus is added to the film formation process in a batch-type film formation apparatus, but since one modification process is performed in a lump to a certain depth (<20 nm), sufficiently high productivity can be obtained compared to single-wafer film formation by atomic layer by ALD. Furthermore, since the formation of a carbon-containing protective film for preventing oxidation can be formed in a short time by introducing a carbon-containing gas in a batch-type film formation apparatus, sufficiently high productivity can be maintained even if this process is added. Furthermore, since this carbon-containing protective film is removed in a lump by ashing in the single-wafer type modification apparatus, sufficiently high productivity can be maintained even if a process of removing the protective film is added.

[0036] In addition, since the modification process is performed in a dedicated single-wafer modification apparatus after film formation, it can be performed under conditions (high power, low pressure, etc.) that cannot be performed in conventional single-wafer film formation apparatuses, allowing for a high degree of freedom in the modification process and enabling modification process to be performed to deeper positions. Furthermore, since the modification process is performed by batch processing at a certain depth (<20 nm) after the compound film is formed, the compound film acts as a protective film for the base, and damage to the base can be mitigated compared to conventional single-wafer ALD film formation apparatuses that process atomic layers at a time. Alternatively, if the damage is the same, stronger modification conditions can be selected.

[0037] 2(a) to (f) show an example in which a compound film 202 is formed on a planar base 201, a protective film 203 containing carbon is formed, the protective film 203 is removed by plasma ashing, and then the compound film 202 is subjected to a plasma modification process to form a modified film 202a. However, the present invention is not limited to this, and may be applied to cases where a film is formed using a patterned substrate, such as cases where a substrate having a recess is filled or a compound film is formed on the surface of a substrate having a recess.

[0038] 3(a) to (f) show an example of embedding in a substrate having a recess formed therein. As shown in FIG. 3(a), a base 211 having a recess 211a is prepared, and as shown in FIG. 3(b), a compound film 212 made of, for example, a film containing nitrogen or a film containing oxygen and carbon is formed to embed the recess 211a. Then, as shown in FIG. 3(c), a protective film 213 containing carbon is formed on the compound film 212, and as shown in FIG. 3(d), the protective film 213 is removed by plasma ashing. Next, as shown in FIG. 3(e), a plasma modification process is performed on the embedded film 212 to form a modified film 212a as shown in FIG. 3(f). In this example, when the recess 211a is deep, it is preferable to set the modification conditions (power, pressure, etc.) appropriately so that the modification effect can be obtained up to a deep position in the embedded compound film 212.

[0039] 4(a)-(f) show an example of forming a compound film on the surface of a substrate having recesses formed thereon, so as not to fill the recesses. As shown in FIG. 4(a), a substrate 211 having recesses 211a is prepared as in FIG. 3(a), and a compound film 214 made of, for example, a film containing nitrogen or a film containing oxygen and carbon is formed as shown in FIG. 4(b). Then, as shown in FIG. 4(c), a protective film 215 containing carbon is formed on the compound film 214, and as shown in FIG. 4(d), the protective film 215 is removed by plasma ashing. Next, as shown in FIG. 4(e), a plasma modification process is performed on the compound film 214, to form a modified film 214a as shown in FIG. 4(f).

[0040] [Second embodiment] Next, a second embodiment of the film forming method will be described. FIG. 5 is a flow chart showing a film forming method according to a second embodiment, and FIG. 6 is a cross-sectional view showing main steps of the film forming method according to the second embodiment.

[0041] In this embodiment, similarly to the first embodiment, a film is formed using a film formation system including a batch-type film formation apparatus having a first chamber and a single-wafer type modification apparatus having a second chamber.

[0042] First, a plurality of substrates are loaded into a first chamber of a batch-type film forming apparatus (step ST11). As shown in FIG. 6(a), the substrate S has a base body 221. Other films may be formed on the base body 221. The base body 221 is not particularly limited, but is typically exemplified as a semiconductor base body as in the first embodiment.

[0043] Next, a compound film is formed by ALD on a plurality of substrates carried into the first chamber of the batch-type film forming apparatus (step ST12). As in the first embodiment, the compound film may be formed by CVD. In this embodiment, since carbon is mixed into the film during the modification process described later, the compound film functions as a precursor of the modified film, and the composition of the film to be formed is determined in anticipation of the composition after modification. The compound film in this embodiment may be a film that becomes a film containing nitrogen or a film containing oxygen and carbon after modification. Specifically, the compound film may be a SiO film in addition to the SiN film, SiCN film, SiON film, SiOCN film, BN film, BCN film, and SiOC film exemplified in the first embodiment. FIG. 6(b) shows a state in which such a compound film 222 is formed on the base 221 of the substrate S shown in FIG. 6(a).

[0044] Next, a protective film containing carbon is formed on the substrates S after the film formation in the first chamber (step ST13). Fig. 6(c) shows a state in which a protective film 223 containing carbon is formed on the substrate S after the compound film 222 is formed.

[0045] Next, the plurality of substrates are removed from the first chamber (step ST14). The removed plurality of substrates may be exposed to the atmosphere.

[0046] Next, one or several substrates from the plurality of substrates unloaded from the first chamber are loaded into a second chamber of the single-wafer type modifying apparatus (step ST15).

[0047] The above steps ST11 to ST15 are basically performed in the same manner as steps ST1 to ST5 in the first embodiment.

[0048] In this embodiment, the substrate with the protective film containing carbon remaining is then subjected to a modification process in the second chamber (step ST16). As a result, the carbon of the protective film is mixed into the compound film to form a modified film. This modification process may be a plasma modification process using plasma. FIG. 6(d) shows a state in which the plasma modification process is performed with the protective film 223 of FIG. 6(c) remaining, and FIG. 6(e) shows a state in which the modified film 222a is formed by the modification process. Note that FIG. 6(e) shows an example in which the entire compound film 222 is the modified film 222a, but only a part of the compound film 222 may be the modified film 222a. The depth of the modified film 222a may be 20 nm or less.

[0049] In this embodiment, the modification process is a process for improving the film quality of the compound film formed by the batch-type film forming apparatus. Specifically, the modification process, particularly the modification process using plasma, mixes the carbon in the protective film containing carbon into the compound film to adjust the film composition, and at the same time removes impurities in the compound film and eliminates dangling bonds to improve the bonding state of the compounds constituting the compound film.

[0050] In this way, carbon is mixed into the compound film during the modification process, so that, for example, if the compound film is a SiN film or a SiON film, the modified film will be a SiNC film or a SiOCN film. Also, if the compound film is a BN film, the modified film will be a BCN film. If the compound film is a SiO film, the modified film will be a SiOC film. If the compound film is a SiCN film, a BCN film, a SiOC film, or a SiOCN film, and the formed film contains carbon, the composition of the modified film will shift to carbon-rich. The composition of the modified film can be adjusted by the thickness of the protective film containing carbon and the conditions of the modification process.

[0051] A rare gas can be used as the gas used in the plasma modification process. For example, Ar gas, He gas, or a mixture of these can be used. A chemical gas may be added to the rare gas. As the chemical gas, H2 gas, NH3 gas, N2 gas, etc. can be used, and these may be used alone or in a mixture of two or more. As the plasma during the plasma modification process, various plasmas such as capacitively coupled plasma, inductively coupled plasma, and microwave plasma can be used. In addition to the above, when the compound film is a SiO film, a SiON film, a SiOC film, or a SiOCN film, a gas containing oxygen for adjusting the amount of oxygen, such as O2 gas, H2O gas, H2O2 gas, N2O gas, and NO gas, may be used as the chemical gas.

[0052] In this embodiment as well, a compound film is formed on multiple substrates in a batch-type deposition apparatus, a carbon-containing protective film is then formed, and then a modification process is performed on the substrates in a dedicated single-wafer modification apparatus. This makes it possible to obtain a high-quality compound film at a low temperature while maintaining high productivity.

[0053] In this embodiment, it is possible to obtain other effects than those obtained in the first embodiment. In addition, since the protective film containing carbon is not removed in this embodiment, the productivity can be increased accordingly.

[0054] <Film formation system> Next, a film forming system for carrying out the above-described film forming method will be described. 7 is a block diagram showing an example of a film forming system used to carry out the film forming method. As shown in FIG. 7, the film forming system 100 includes a batch type film forming apparatus 101 having a first chamber, a single wafer type modification apparatus 102 having a second chamber, a transfer device 103, and a control device 104.

[0055] The batch-type film-forming apparatus 101 carries a plurality of substrates into a chamber and performs film-forming processing on the plurality of substrates in a vacuum atmosphere. As the batch-type film-forming apparatus 101, a vertical film-forming apparatus, which will be described later, can be used in which a plurality of substrates (e.g., about 50 to 175 substrates) are arranged in a vertically stacked state in a chamber (first chamber) and film-forming is performed on the substrates. The batch-type film-forming apparatus 101 may also be equipped with a plasma source.

[0056] The single-wafer type modifying apparatus 102 places one or several substrates on which a film has been formed on a stage in a chamber (second chamber) and performs a modifying process on the film on the substrate in a vacuum atmosphere. The single-wafer type modifying apparatus 102 may include a plasma source. In addition, a plurality of single-wafer type modifying apparatuses 102 may be provided.

[0057] The transport device 103 transports the substrate in an atmospheric environment. Specifically, the transport device 103 transports the substrate into the batch-type film-forming apparatus 101, transports the substrate from the batch-type film-forming apparatus 101 to the single-wafer type reforming apparatus 102, and unloads the substrate from the single-wafer type reforming apparatus 102. The transport device 103 also removes the substrate from a substrate holder (not shown) that holds the substrate and delivers the substrate to the substrate holder. The transport device 103 may have a first transport section that collectively transports and unloads a plurality of substrates (e.g., 5 to 25 substrates) held by the holder to and from the batch-type film-forming apparatus 101, and a second transport section that transports and unloads the substrates one by one or several at a time to and from the single-wafer type reforming apparatus 102.

[0058] The control device 104 has a CPU (computer) and controls the batch type film forming apparatus 101, the single wafer type modification apparatus 102, and the transport device 103. The control device 104 causes the batch type film forming apparatus 101, the single wafer type modification apparatus 102, and the transport device 103 to perform operations for film formation based on a process recipe.

[0059] In such a film forming system 100, first, under the control of the control device 104, a plurality of substrates (for example, 50 to 175 substrates) are carried into the first chamber of the batch-type film forming apparatus 101 by the transport device 103. Then, a compound film is formed on the plurality of substrates in the first chamber, and then a protective film containing carbon is formed. Next, the transport device 103 carries out the plurality of substrates from the first chamber of the batch-type film forming apparatus 101, and carries one or several of the substrates into the second chamber of the single-wafer type reforming apparatus 102. Next, when the film forming method of the first embodiment is carried out, the protective film containing carbon of the substrate is removed in the second chamber of the single-wafer type reforming apparatus 102, and then a reforming process is carried out on the substrate. Also, when the film forming method of the second embodiment is carried out, the reforming process is carried out on the substrate in the second chamber of the single-wafer type reforming apparatus 102 while leaving the protective film containing carbon on the substrate. After the reforming process of the substrate is completed, the substrate is carried out from the second chamber. The processing in the single-wafer type modification apparatus 102 is repeated until the modification processing is performed on all of the plurality of substrates unloaded from the batch type film formation apparatus 101 .

[0060] The film forming system is not limited to a case where the film forming method of the first or second embodiment is implemented, but may be any system that is integrated as a clear system as shown in FIG. 7. For example, even if a batch-type film forming apparatus and a single-wafer type modifying apparatus exist as separate systems and do not appear to be integrated, the system is a film forming system as long as the above-mentioned method can be implemented. In other words, even if a batch-type film forming apparatus and a single-wafer type modifying apparatus exist as separate systems and a transfer container called a FOUP (Front Opening Unified Pod) is used to transfer substrates between the apparatuses, the film forming system is considered to be implemented as long as the above-mentioned film forming method can be implemented. In this case, for example, a host computer in a semiconductor factory may control the film forming by the batch-type film forming apparatus, the modification by the single-wafer type modifying apparatus, and the transfer of the substrate.

[0061] [Example of batch-type film forming equipment] Next, a description will be given of an example of the batch-type film forming apparatus 101. Here, a film forming apparatus for forming a SiN film will be described as an example. FIG. 8 is a vertical cross-sectional view showing an example of a batch-type film forming apparatus 101, and FIG. 9 is a horizontal cross-sectional view of the batch-type film forming apparatus shown in FIG.

[0062] The batch-type film forming apparatus 101 of this example is configured as a plasma-assisted vertical film forming apparatus, and has a cylindrical first chamber 1 with a ceiling and an open lower end. The entire first chamber 1 is made of, for example, quartz, and a quartz ceiling plate 2 is provided near the upper end of the first chamber 1 to seal the area below it. A metallic manifold 3 formed into a cylindrical shape is connected to the lower opening of the first chamber 1 via a seal member 4 such as an O-ring.

[0063] Manifold 3 supports the lower end of chamber 1, and a quartz substrate holder 5 carrying multiple substrates S, for example 50 to 175 substrates S, in multiple stages, is inserted into first chamber 1 from below manifold 3. The substrates S may be semiconductor wafers (silicon wafers), and substrate holder 5 may be a wafer boat. Substrate holder 5 has three rods 6 (see FIG. 9), and multiple substrates S are supported by grooves (not shown) formed in rods 6.

[0064] The substrate holder 5 is placed on a table 8 via a quartz heat-insulating tube 7, and the table 8 is supported on a rotating shaft 10 that passes through a metal (stainless steel) lid 9 that opens and closes the lower end opening of the manifold 3.

[0065] A magnetic fluid seal 11 is provided at the penetration portion of the rotating shaft 10, which rotatably supports the rotating shaft 10 while airtightly sealing it. A seal member 12 is interposed between the peripheral portion of the lid portion 9 and the lower end portion of the manifold 3 to maintain the sealing performance inside the first chamber 1.

[0066] The rotating shaft 10 is attached to the tip of an arm 13 supported by a lifting mechanism (not shown), and the substrate holding part 5, the lid part 9, etc. are raised and lowered together to be inserted into and removed from the first chamber 1. Note that the table 8 may be fixed to the lid part 9 side so that film formation on the substrate S can be performed without rotating the substrate holding part 5.

[0067] The batch-type film forming apparatus 101 also has a Si source gas supply mechanism 14 for supplying a Si source gas into the first chamber 1, a nitrogen-containing gas supply mechanism 15 for supplying a nitrogen-containing gas into the first chamber 1, and a carbon-containing gas supply mechanism 16 for supplying a carbon-containing gas into the first chamber 1. The batch-type film forming apparatus 101 also has an inert gas supply mechanism 29 for supplying an inert gas, for example, Ar gas, into the first chamber 1.

[0068] The Si raw material gas supply mechanism 14 has a Si raw material gas supply source 17, a gas pipe 18 for introducing the Si raw material gas from the Si raw material gas supply source 17, and a gas dispersion nozzle 19 connected to the gas pipe 18 for introducing the Si raw material gas into the first chamber 1. As the Si raw material gas, a Cl-containing Si compound gas such as SiH2Cl2 gas can be suitably used.

[0069] The nitrogen-containing gas supply mechanism 15 has a nitrogen-containing gas supply source 20, a gas pipe 21 that introduces the nitrogen-containing gas from the nitrogen-containing gas supply source 20, and a gas dispersion nozzle 22 that is connected to the gas pipe 21 and introduces the nitrogen-containing gas into the first chamber 1. As the nitrogen-containing gas, for example, NH3 gas or N2 gas can be used. Both of these may be used.

[0070] The carbon-containing gas supply mechanism 16 includes a carbon-containing gas supply source 23, a gas pipe 24 for introducing the carbon-containing gas from the carbon-containing gas supply source 23, and a gas dispersion nozzle 25 connected to the gas pipe for introducing the carbon-containing gas into the first chamber 1. As the carbon-containing gas, for example, a hydrocarbon gas such as C2H4 gas, C2H2 gas, C2H6 gas, or C3H6 gas can be used.

[0071] Gas distribution nozzles 19, 22, and 25 are made of quartz, penetrate the sidewall of manifold 3 inward, and are bent upward to extend vertically. A plurality of gas discharge holes 19a, 22a, and 25a are formed at predetermined intervals in the vertical portions of gas distribution nozzles 19, 22, and 25, respectively, over a vertical length corresponding to the substrate support range of substrate holder 5. Gas can be discharged substantially uniformly from each of gas discharge holes 19a, 22a, and 25a in the horizontal direction toward first chamber 1. Note that, although two gas distribution nozzles 19 are provided in this example, only one may be provided.

[0072] The inert gas supply mechanism 29 includes an inert gas supply source 26, a gas pipe 27 for introducing an inert gas from the inert gas supply source 26, and a gas nozzle 28 made of a short quartz tube connected to the gas pipe 27 and provided so as to penetrate the side wall of the manifold 3.

[0073] The gas pipes 18, 21, 24, and 27 are provided with on-off valves 18a, 21a, 24a, and 27a and flow rate controllers 18b, 21b, 24b, and 27b, respectively.

[0074] A plasma generation mechanism 30 is formed on a part of the side wall of the first chamber 1. The plasma generation mechanism 30 is configured as a remote plasma source that converts a nitrogen-containing gas and a carbon-containing gas into plasma. The plasma generation mechanism 30 includes a plasma partition wall 32 that is hermetically welded to the outer wall of the first chamber 1. The plasma partition wall 32 is formed of, for example, quartz. The plasma partition wall 32 has a concave cross section and covers an opening 31 formed in the side wall of the first chamber 1. The opening 31 is formed elongated in the vertical direction so that all the substrates S supported by the substrate holder 5 can be covered in the vertical direction. A distribution nozzle 22 that discharges a nitrogen-containing gas and a distribution nozzle 25 that discharges a carbon-containing gas are disposed in the inner space defined by the plasma partition wall 32, i.e., inside the plasma generation space. The two gas distribution nozzles 19 are provided at positions sandwiching the opening 31 in the inner wall of the first chamber 1 outside the plasma generation space.

[0075] The plasma generation mechanism 30 further includes a pair of elongated plasma electrodes 33 arranged on the outer surfaces of both side walls of the plasma partition wall 32 so as to face each other along the vertical direction, and a high-frequency power supply 35 connected to each of the pair of plasma electrodes 33 via a power supply line 34 and supplying high-frequency power to the pair of plasma electrodes 33. The high-frequency power supply 35 applies a high-frequency voltage of, for example, 13.56 MHz to the pair of plasma electrodes 33. This applies a high-frequency electric field to the plasma generation space defined by the plasma partition wall 32. The nitrogen-containing gas discharged from the distribution nozzle 22 and the carbon-containing gas discharged from the distribution nozzle 25 are converted into plasma in the plasma generation space to which the high-frequency electric field is applied, and are transported into the first chamber 1 through the opening 31 as plasma gas containing active species.

[0076] An insulating protective cover 36 is attached to cover the outside of the plasma partition wall 32. A coolant passage (not shown) is provided on the inside of the insulating protective cover 36, and the plasma electrode 33 is cooled by flowing a coolant such as cooled nitrogen gas through the coolant passage.

[0077] An exhaust port 37 for evacuating the inside of the first chamber 1 is provided in the side wall portion of the first chamber 1 facing the distribution nozzles 19, 22, and 25. The exhaust port 37 is formed to be elongated vertically. An exhaust port cover member 38 formed in a U-shaped cross section so as to cover the exhaust port 37 is attached to the portion of the first chamber 1 corresponding to the exhaust port 37. The exhaust port cover member 38 extends upward along the side wall of the first chamber 1 and defines a gas outlet 39 at the top of the first chamber 1. An exhaust device 40 including a vacuum pump or the like is connected to the gas outlet 39, and the inside of the first chamber 1 is evacuated through the gas outlet 39 by the exhaust device 40. A cylindrical heating mechanism 41 for heating the first chamber 1 and the multiple substrates S therein is provided so as to surround the outer periphery of the first chamber 1.

[0078] In such a batch-type film forming apparatus 101, a SiN film is formed as a compound film on a plurality of substrates S as follows, and then a protective film containing carbon is formed thereon. The SiN film can be formed by, for example, ALD. The SiN film may also be formed by CVD.

[0079] First, the inside of the first chamber 1 is heated to a desired temperature, for example, below 600°C, and the substrate holder 5 carrying 50 to 175 substrates S is loaded into the first chamber 1. The inside of the first chamber 1 is then evacuated by the exhaust device 40 while the pressure inside the first chamber 1 is adjusted to a desired vacuum pressure.

[0080] Next, the supply of Si raw material gas from the Si raw material gas supply mechanism 14 to the first chamber 1 and the supply of nitrogen-containing gas in plasma form from the nitrogen-containing gas supply mechanism 15 to the first chamber 1 via the plasma generation mechanism 30 are repeated multiple times. In this way, a SiN film is formed by ALD, which alternates between adsorption of the Si raw material gas onto the substrate S and nitridation of the adsorbed Si raw material gas. After one Si raw material adsorption process and one nitridation process, an inert gas is supplied from the inert gas supply mechanism 29 into the first chamber 1 to purge the residual gas in the first chamber 1. When forming a SiN film by CVD, the Si raw material gas and the nitrogen-containing gas are supplied simultaneously.

[0081] After the SiN film is formed, the first chamber is purged and a carbon-containing protective film is formed. The carbon-containing protective film is formed by converting the carbon-containing gas supplied from the carbon-containing gas supply mechanism 16 into plasma by the plasma generation mechanism 30 and supplying the carbon-containing gas into the first chamber 1 by CVD. Note that the carbon-containing protective film may be formed without converting the carbon-containing gas into plasma.

[0082] [An example of a single-wafer reforming equipment] Next, an example of the single-wafer type reformer 102 will be described. FIG. 10 is a cross-sectional view showing an example of a single-wafer type reformer 102.

[0083] The single-wafer type reforming apparatus 102 of this embodiment is a microwave plasma processing apparatus, and is configured as an RLSA (registered trademark) microwave plasma processing apparatus.

[0084] 10, the single wafer reformer 102 has an airtight, grounded, substantially cylindrical second chamber 51. A circular opening 60 is formed in the substantially central portion of a bottom wall 51a of the second chamber 51, and an exhaust chamber 61 that communicates with the opening 60 and protrudes downward is provided in the bottom wall 51a.

[0085] A substrate mounting table 52 for horizontally supporting a substrate S is provided in the second chamber 51. The substrate mounting table 52 is made of ceramics such as AlN, and is supported by a cylindrical support member 53 extending upward from the center of the bottom of the exhaust chamber 61. A guide ring 54 for guiding the substrate S is provided on the outer edge of the substrate mounting table 52. A resistance heating type heater 55 is embedded in the substrate mounting table 52, and the heater 55 heats the substrate mounting table 52 by being supplied with power from a heater power supply 56, thereby controlling the temperature of the substrate S mounted thereon. An electrode 57 is embedded in the substrate mounting table 52, and a high frequency power supply 59 for applying a bias is connected to the electrode 57 via a matching box 58.

[0086] The substrate mounting table 52 is provided with substrate support pins (not shown) for supporting and raising and lowering the substrate S, the pins being capable of protruding and retracting from the surface of the substrate mounting table 52 .

[0087] An annular gas inlet 65 is provided on the side wall of the second chamber 51, and a plurality of gas emission holes 65a are evenly formed in the gas inlet 65. A gas supply mechanism 66 is connected to the gas inlet 65.

[0088] The gas supply mechanism 66 supplies a rare gas, which is a plasma generating gas, used in the plasma modification process. In addition, a chemical gas for the plasma modification process or an oxygen-free gas used in plasma ashing for removing a protective film containing carbon may be supplied. When H2 gas or NH3 gas is used as a chemical gas for the plasma modification process, these gases can also be used as an oxygen-free gas for plasma ashing. When multiple gases are supplied from the gas supply mechanism 66, the gases are supplied to the gas introduction section 65 after being independently flow-controlled by a flow rate controller such as a mass flow controller through separate pipes.

[0089] An exhaust pipe 73 is connected to the side of the exhaust chamber 61, and an exhaust device 74 including a vacuum pump, an automatic pressure control valve, etc. is connected to this exhaust pipe 73. By operating the vacuum pump of the exhaust device 74, the gas in the second chamber 51 is uniformly discharged into the space 61a of the exhaust chamber 61 and exhausted through the exhaust pipe 73, and the inside of the second chamber 51 can be controlled to a predetermined vacuum level by the automatic pressure control valve.

[0090] A side wall of the second chamber 51 is provided with a load / unload port 75 for loading / unloading the substrate S, and a gate valve 76 for opening and closing the load / unload port 75.

[0091] The top of the second chamber 51 is an opening, and the periphery of the opening is a ring-shaped support 77. A disk-shaped microwave transmitting plate 78 made of a dielectric material, for example, ceramics such as quartz or Al2O3, is airtightly mounted on this support 77 via a seal member 79. Therefore, the inside of the second chamber 51 is kept airtight.

[0092] Above the microwave transmitting plate 78, a disk-shaped planar antenna 81 corresponding to the microwave transmitting plate 78 is provided so as to be in close contact with the microwave transmitting plate 78. This planar antenna 81 is fixed to the upper end of the side wall of the second chamber 51. The planar antenna 81 is made of a disk made of a conductive material. Specifically, for example, it is made of a copper plate or an aluminum plate whose surface is plated with silver or gold, and a large number of microwave radiation holes 82 (slots) are formed by passing through the plate in a predetermined pattern. An example of the pattern is one in which a plurality of pairs of microwave radiation holes 82, each pair consisting of two microwave radiation holes 82 arranged in a T-shape, are arranged in a concentric pattern. The length and arrangement interval of the microwave radiation holes 82 are determined according to the wavelength (λg) of the microwave, and for example, the microwave radiation holes 82 are arranged so that the interval between them is λg / 4, λg / 2, or λg. The microwave radiation holes 82 may be of other shapes such as a circular shape or an arc shape. Furthermore, the arrangement of the microwave radiation holes 82 is not particularly limited, and in addition to being concentric, they may also be arranged in, for example, a spiral or radial pattern.

[0093] A slow-wave material 83 made of a dielectric material having a higher dielectric constant than that of a vacuum, such as quartz, polytetrafluoroethylene, polyimide or other resin, is attached in close contact with the upper surface of this planar antenna 81. The slow-wave material 83 has the function of making the microwave wavelength shorter than that in a vacuum, thereby making the planar antenna 81 smaller. The slow-wave material 83 can adjust the phase of the microwave by its thickness, and by adjusting the thickness so that the joint of the planar antenna 81 becomes a "bell" of a standing wave, the radiation energy of the microwave can be maximized.

[0094] Although the planar antenna 81 and the microwave transmitting plate 78, and the slow-wave material 83 and the planar antenna 81 are disposed in close contact with each other, they may be disposed apart from each other.

[0095] A shielding cover 84 made of a metal material such as aluminum, stainless steel, or copper is provided on the upper surface of the second chamber 51 so as to cover the planar antenna 81 and the slow wave material 83. The upper surface of the second chamber 51 and the shielding cover 84 are sealed with a sealing member 85. A cooling water flow path 84a is formed in the shielding cover 84, and cooling water is passed through the path to cool the shielding cover 84, the slow wave material 83, the planar antenna 81, and the microwave transmitting plate 78. The shielding cover 84 is grounded.

[0096] An opening 86 is formed in the center of the upper wall of the shield cover 84, and a waveguide 87 is connected to this opening 86. A microwave generator 89 is connected to an end of this waveguide 87 via a matching circuit 88. As a result, microwaves having a frequency of, for example, 2.45 GHz generated by the microwave generator 89 are propagated to the planar antenna 81 via the waveguide 87. Note that various frequencies such as 8.35 GHz, 1.98 GHz, 860 MHz, and 915 MHz can be used as the microwave frequency.

[0097] The waveguide 87 includes a coaxial waveguide 87a with a circular cross section extending upward from the opening 86 of the shield cover 84, and a rectangular waveguide 87b extending horizontally and connected to the upper end of the coaxial waveguide 87a via a mode converter 90. The mode converter 90 between the rectangular waveguide 87b and the coaxial waveguide 87a has a function of converting microwaves propagating in TE mode within the rectangular waveguide 87b to TEM mode. An inner conductor 91 extends from the center of the coaxial waveguide 87a, and the lower end of the inner conductor 91 is connected and fixed to the center of the planar antenna 81. As a result, the microwaves are uniformly and efficiently propagated to the planar antenna 81 via the inner conductor 91 of the coaxial waveguide 87a.

[0098] In such a single-wafer processing modifying apparatus 102 , first, the gate valve 76 is opened and the substrate S is loaded into the second chamber 51 through the load / unload port 75 and placed on the substrate mounting table 52 .

[0099] Then, a rare gas, for example, Ar gas, which is a plasma generating gas, is introduced into the second chamber 51 from the gas supply mechanism 66 through the gas introduction part 65, and a microwave with a predetermined power from a microwave generator 89 is guided to the waveguide 87 through a matching circuit 88. The microwave guided to the waveguide 87 is propagated in the rectangular waveguide 87b in the TE mode. The TE mode microwave is converted to the TEM mode by the mode converter 90, and the TEM mode microwave is propagated in the coaxial waveguide 87a in the TEM mode. The TEM mode microwave is then transmitted through the slow wave material 83, the slot 82 of the planar antenna 81, and the microwave transmission plate 78, and is radiated into the second chamber 51. The microwave spreads as a surface wave only in the area directly below the microwave transmission plate 78, and a surface wave plasma is generated. The plasma then spreads downward, and the area where the substrate S is placed becomes a plasma with a high electron density and a low electron temperature.

[0100] When removing the protective film containing carbon by plasma ashing, a high-frequency bias for attracting ions is applied from the high-frequency power supply 59 to the substrate mounting table 52, and further, a reducing gas such as H2 gas or NH3 gas or an oxygen-free gas such as N2 gas is supplied from the gas supply mechanism 66 via the gas inlet 65 and turned into plasma, thereby removing the protective film containing carbon by ashing.

[0101] When performing the plasma modification process, a high frequency bias for attracting ions is applied from the high frequency power supply 59 to the substrate mounting table 52, and further, a rare gas alone or a rare gas and a chemical gas such as H2 gas or NH3 gas are supplied from the gas supply mechanism 66 via the gas inlet 65 to convert them into plasma, thereby performing the plasma modification process. As described above, the plasma modification process may be performed after removing the carbon-containing protective film, or may be performed with the carbon-containing protective film remaining.

[0102] <Other applications> Although the embodiments have been described above, the embodiments disclosed herein should be considered to be illustrative and not restrictive in all respects. The above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims.

[0103] For example, in the above embodiment, a film containing nitrogen or a film containing oxygen and carbon is mentioned as the finally obtained film, but it is not limited thereto. Furthermore, the methods of forming the compound film, forming the protective film containing carbon, removing the protective film, and modifying the compound film are not limited to those exemplified in the embodiment. Furthermore, in the above embodiment, a plasma-assisted vertical batch type film forming apparatus is shown as the batch type film forming apparatus, but it is not limited thereto, and it may not use plasma. Furthermore, a single-wafer type modifying apparatus using microwave plasma is shown, but it is not limited thereto, and it may use other plasma such as capacitively coupled plasma or inductively coupled plasma, or it may not use plasma. [Explanation of symbols]

[0104] 100; Film deposition system 101: Batch-type film forming equipment 102; Single-wafer reforming equipment 103: Transport device 104: Control device 201, 211, 221; Substrate 202, 212, 222; Compound film 202a, 212a, 222a; modified membrane 203, 213, 223; Carbon-containing protective films S; Substrate

Claims

1. A film formation method for forming a film using a batch-type film formation apparatus having a first chamber and a single-wafer type modification apparatus having a second chamber, comprising: loading a plurality of substrates into the first chamber; forming a compound film on the plurality of substrates carried into the first chamber; forming a protective film containing carbon on the plurality of substrates in the first chamber; unloading the plurality of substrates on which the protective film is formed from the first chamber; loading one or more of the plurality of substrates removed from the first chamber into the second chamber of the single-wafer processing apparatus; a step of performing a modification treatment on the one or more substrates in the second chamber, the step of performing the modification treatment forming a modified film.

2. 2. The film forming method according to claim 1, wherein the batch-type film forming apparatus processes 50 or more substrates placed in the first chamber, and the single-wafer type modification apparatus processes one or a plurality of substrates, up to four substrates, placed on a stage in the second chamber.

3. 2. The film forming method according to claim 1, further comprising a step of removing the carbon-containing protective film in the second chamber to expose the compound film, and performing the modification treatment on the one or more substrates after removing the carbon-containing protective film.

4. 4. The film forming method according to claim 3, wherein the step of removing the protective film containing carbon is performed by plasma ashing using a gas not containing oxygen.

5. 4. The film forming method according to claim 3, wherein the compound film is a film containing nitrogen or a film containing oxygen and carbon.

6. 6. The film forming method according to claim 5, wherein the compound film is any one of a SiN film, a SiCN film, a SiON film, a SiOCN film, a BN film, a BCN film, and a SiOC film.

7. The film forming method according to claim 1 , wherein the step of modifying the one or more substrates is performed while the carbon-containing protective film remains on the one or more substrates.

8. 8. The film forming method according to claim 7, wherein the step of performing the modification treatment forms the modified film in a state in which carbon from the carbon-containing protective film is mixed into the compound film.

9. 9. The film forming method according to claim 8, wherein the composition of the compound film is determined so that the modified film is a film containing nitrogen or a film containing oxygen and carbon.

10. 10. The film forming method according to claim 9, wherein the compound film is any one of a SiN film, a SiCN film, a SiON film, a SiOCN film, a BN film, a BCN film, a SiOC film, and a SiO film.

11. 11. The method according to claim 1, wherein the carbon-containing protective film has a thickness in the range of 10 nm to 100 nm.

12. The film forming method according to claim 1 , wherein the substrates removed from the first chamber are exposed to the atmosphere.

13. The method according to claim 1 , wherein the compound film is formed by plasma-assisted ALD.

14. 14. The film formation method according to claim 13, wherein the compound film forming step is performed by using, as the batch-type film formation apparatus, a vertical film formation apparatus in which a plurality of substrates are stacked vertically and disposed in the first chamber to form a film.

15. The method of claim 14, wherein the plasma in the plasma-assisted ALD is a remote plasma.

16. 14. The method according to claim 13, wherein the step of depositing the protective film containing carbon is performed by plasma-assisted CVD by supplying a gas containing carbon to the first chamber.

17. The film forming method according to claim 1 , wherein the modifying treatment is performed by a plasma-based modifying treatment.

18. The modification treatment using plasma is carried out by adding a rare gas or a rare gas plus H ２ Gas, NH ３ Gas, N ２ 18. The film forming method according to claim 17, further comprising the step of adding one of a nitrogen gas and a hydrocarbon gas to the nitrogen gas.

19. a batch-type film forming apparatus having a first chamber and configured to process a plurality of substrates; a single-wafer processing apparatus having a second chamber and configured to process one or more substrates; A transport device that transports the substrate; A control device; having The control device includes: loading a plurality of substrates into the first chamber; forming a compound film on the plurality of substrates carried into the first chamber; forming a protective film containing carbon on the plurality of substrates in the first chamber; unloading the plurality of substrates on which the protective film is formed from the first chamber; loading one or more of the plurality of substrates removed from the first chamber into the second chamber of the single-wafer processing apparatus; subjecting the one or more substrates to a modification treatment in the second chamber; The film formation system controls the batch-type film formation apparatus, the single-wafer type modification apparatus, and the transport apparatus so as to perform the above.

20. a batch-type film forming apparatus having a first chamber and configured to process a plurality of substrates; a single-wafer processing apparatus having a second chamber and configured to process one or more substrates; A film formation system for forming a compound film on a substrate, comprising: a compound film is formed on the plurality of substrates in the first chamber, a protective film containing carbon is formed on the plurality of substrates on which the compound film is formed in the first chamber, one or more of the plurality of substrates on which the protective film is formed and which have been removed from the first chamber are carried into the second chamber of the single-wafer modification apparatus, and a modification process is performed on the one or more substrates in the second chamber.

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